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Shiono et al., 1979 - Google Patents

Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO2–Si Interfaces

Shiono et al., 1979

Document ID
10069617176711124031
Author
Shiono N
Yashiro T
Publication year
Publication venue
Japanese Journal of Applied Physics

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Snippet

Surface state formation during bias-temperature (BT) stress aging is investigated in polycrystalline silicon (phosphorous doped)–thin SiO 2–silicon capacitor fabricated by the standard silicon gate process. The applied stress field was 2.3–4.5 MV/cm. The stress …
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