[go: up one dir, main page]

Folch et al., 1995 - Google Patents

Electron beam deposition of gold nanostructures in a reactive environment

Folch et al., 1995

View PDF
Document ID
1006371520527453015
Author
Folch A
Tejada J
Peters C
Wrighton M
Publication year
Publication venue
Applied physics letters

External Links

Snippet

Electron beam deposition (EBD) is a maskless technique suitable for the fabrication of nanometer scale structures. Metals can be deposited from an organometallic gas, but simultaneous carbon deposition typically yields grossly impure (∼ 25% metal) deposits. We …
Continue reading at faculty.washington.edu (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a micro-scale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Similar Documents

Publication Publication Date Title
Folch et al. Electron beam deposition of gold nanostructures in a reactive environment
Koops et al. High‐resolution electron‐beam induced deposition
US8303833B2 (en) High resolution plasma etch
Hagenhoff High resolution surface analysis by TOF-SIMS
Silvis-Cividjian et al. Electron‐Beam–Induced Nanometer‐Scale Deposition
US8617668B2 (en) Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
US6514866B2 (en) Chemically enhanced focused ion beam micro-machining of copper
US9951417B2 (en) Method of depositing material
US10304658B2 (en) Electron beam-induced etching
US9006681B2 (en) Method of depositing protective structures
Wittmaack Raster scanning depth profiling of layer structures
Lee et al. Direct electron‐beam patterning for nanolithography
WO1994012680A1 (en) Doping of highly tetrahedral diamond-like amorphous carbon
Welipitiya et al. Ultraviolet and electron radiation induced fragmentation of adsorbed ferrocene
Haque et al. Ice lithography using tungsten hexacarbonyl
US10347463B2 (en) Enhanced charged particle beam processes for carbon removal
Schaefer et al. Etching of GaAs (100) by activated hydrogen
Brückl et al. Low energy electron beam decomposition of metalorganic precursors with a scanning tunneling microscope at ambient atmosphere
Yasuda et al. Selective-area formation of Si microstructures using ultrathin SiO 2 mask layers
Cherchour et al. Interaction of ionized hydrogen with cleaved GaAs. Comparison with atomic hydrogen interaction
Levin et al. Model for focused ion beam deposition
Taniguchi et al. Beam-assisted-etching technique for fabrication of single crystal diamond field emitter tip
Ross Nano-cellular microstructure evolution in ion-induced chemical vapor deposition (II-CVD) of copper
Chaudhary et al. Chemistry for the Focused Electron and Ion Beam-Induced Deposition of Metal Nanostructures
Oechsner Electron and mass spectrometric analysis of plasma controlled surfaces and thin films