WO2025243069A1

WO2025243069A1 - A photovoltaic cell with enhanced energy production utilizing an antenna configuration and a method of manufacturing thereof

Info

Publication number: WO2025243069A1
Application number: PCT/IB2024/054963
Authority: WO
Inventors: Chithra Kirthi Gamini PIYADASA
Original assignee: Walpola Ranjana Gamini
Current assignee: Walpola Ranjana Gamini
Priority date: 2024-05-22
Filing date: 2024-05-22
Publication date: 2025-11-27
Anticipated expiration: 2026-11-22

Abstract

The proposed invention provides for a photovoltaic cell with enhanced capacities to absorb, receive and convert solar radiation by the configuration of an antenna formed at the semiconductor junction. Three dimensional geometrical shapes (that contains plurality of antenna elements) are imprinted on the surface of the semiconductor using either a chemical or a mechanical method and the tilted configuration in the geometrical shapes provides for the increased PV cell area and thereby enhanced capacity to absorb, receive and to convert solar radiation. The antennas that are fabricated at the semiconductor junction can be dipoles or folded dipoles or any other variation of an antenna.

Description

TITLE OF THE INVENTION

A photovoltaic cell with enhanced energy production utilizing an antenna configuration and a method of manufacturing thereof

FIELD OF INVENTION

The current invention pertains to the realm of electromagnetic (EM) energy cells, specifically on photovoltaic (PV) cells that enhance the absorption, reception and conversion of light energy through the incorporation of an antenna structure positioned at the p-n junction.

BACKGROUND OF THE INVENTION

The efficiency of converting solar energy into electrical energy using semiconductor p-n junction based PV cells has steadily improved over time, starting at around 10% in the 1970s. Although certain experimental solar cells have reached efficiencies nearing 50% under carefully controlled laboratory conditions, the majority of commercial cells currently operate near the practical maximum limits of around 23-24% efficiency [1].

Number of methods have been used to increase the efficiency of PV cells to enhance solar radiation absorption, concentrating and diverging on incoming solar energy such as use of advance material, multi-junction cells, using anti-reflective coating, cascading cells.

Number of patents are available in prior art that refer to the enhanced efficiency of solar cells. CN115795A refers to an ultra and high efficient solar cell that provides for above 50% efficiency by III-V multi-j unction solar cells by introducing a novel material for each cell. Patent no. US3988166A is an apparatus for enhancing the output of photovoltaic cells that concentrates on solar energy in to the solar cell by the use of parabolic like reflectors. Patent no. US92417A uses separate solar spectrum by optical elements and uses different solar cells to convert solar energy to electric energy. KR101353350B1 uses heterojunction quantum dots to absorb solar radiation and p and n type semiconductors solar cell to produce electrical energy thereby enhancing efficiency of the solar cells. US 20070240757 Al provides for a nanostructure array that is capable of accepting energy and producing electricity.

The above developments provide for efforts made to address issues relating to collection of transmission efficiency. However, notwithstanding the above developments little increase in the efficiency at the p-n junctions has been achieved in solar cell manufacturing technology.

The proposed invention provides for efficient absorption, reception and conversion of EM energy at the semiconductor p-n junction by the formulation of an antenna which is suitably placed in a proper direction to receive incoming solar radiation. BRIEF DESCRIPTION OF THE INVENTION

The proposed invention provides for a PV cell that efficiently absorbs and receives solar radiation, and converts into electric current/energy by utilizing an antenna configured at the semiconductor p-n junction. Due to the configuration of the antenna, which is properly oriented to the propagation direction of the EM wave to capture the maximum energy, the PV cell is efficiently able to absorb, receive and convert solar radiation into electric current/energy. The orientation of the antenna enhances the output generation by promoting greater absorption, reception and conversion of electrical energy from solar radiation. Utilizing this technique, the present invention provides for a significant boost in solar energy harvesting process.

BRIEF DESCRIPTION OF THE DRAWINGS

Figures 1 shows the theoretical operation of a PV cell according to the Quantum model

Figure 2 shows essential elements of an existing PV cell

Figures 3-4 shows how PV cell transforms solar radiation into usable direct current (DC herein) current according to the proposed model of invention

Figures 5 (a) - (b) are cross-sectional and symbolic views of a PV cell where EM energy is harvested in dipole configuration using semiconductors and external diode to convert induced alternative current (AC herein) current to DC current

Figures 6 (a) - (b) are cross-sectional and symbolic views of a PV cell where EM energy is harvested using semiconductors in a folded-dipole configuration

Figures 7 (a) - (b) are cross-sectional views of a PV cell with theoretical orientations to generate maximum energy from the incoming radiation. Configurations for dipole and folded dipole antennae are illustrated.

Figures 8 (a) - (c) are perspective cross-sectional views of a PV cell that is oriented to obtain optimum EM energy harvesting

Figure 9 is a perspective cross-sectional view of a PV cell that provides for the optimal configuration of the proposed invention

Figures 10 (a) is a 3D image of a single unit with a tilted geometrical shape for the optimal configuration of the proposed invention

Figures 10 (b) is a 3D image of plurality of units shown in Figure 10 (a)

Figures 11 (a) - (c) are perspective cross-sectional views of the steps of chemical etching to create tilted geometrical configuration in a substrate

Figures 12 (a) - (c) are perspective cross-sectional views of the steps of mechanical method to create tilted geometrical configuration in a surface of a substrate

Figures 13 (a) is an example of a single solid emboss tool containing a single face Figures 13 (b) is an example of a single solid emboss tool containing multiple faces

Figures 13 (c) is a cross-sectional view of the tilting angle of the embossing tool

Figures 13 (d) is a cross-sectional view of the multiple tilting angle of the embossing tool

Figure 14 is a perspective cross-sectional view of a single solid emboss tool being placed in the substrate that creates a secondary semiconductor layer from the embossing tool itself

Figures 15 (a) - (b) are cross-sectional views of wetting the single solid emboss tool with doping material, by dipping into solution with doping atoms

Figures 15 (c) is a cross-sectional view of the wetted single solid emboss tool being placed on a substrate prepared to create tilted surface configuration

Figures 15 (d) is a cross-sectional view of the wetted single solid emboss tool creating a secondary semiconductor layer on the primary semiconductor substrate

Figures 16 (a) is a cross-sectional view of the single solid emboss tool with injection doping

Figures 16 (b) is a cross-sectional view of the single solid emboss tool creating a secondary semiconductor layer on the primary semiconductor substrate

Figures 16 (c) is a cross sectional view of the primary and the secondary semiconductor layers containing a single unit of tilted geometrical shape on the primary semiconductor substrate

Figure 17 (a) - (c) are cross sectional views of a single emboss tool creating a single unit of tilted geometrical shape and doping using one of the general doping methods

Figure 18 depicted the increase of effective energy conversion area in proposed cell (two- dimensional and three-dimensional)

Figure 19 is a 3D depiction of a PV cell with tilted geometric formations configured at the p-n junction in the proposed invention

DETAILED DESCRIPTION OF THE INVENTION

Traditionally, EM wave theory [2] and quantum theory [3] had been used to describe the propagation of energy in free space. They have served as the foundation for modelling various natural phenomena.

The concept of quantum theory was initially introduced to explain observations of the photoelectric effect. It is commonly argued that the nearly instantaneous release of photoelectrons upon light striking the detector supports the particle nature of EM waves [4] . This reasoning stems from classical wave theory and the assumption of an energy flux, W_w, associated with a light wave (light is also part of the EM spectrum).

With this assumption, the energy absorbed by an atom would be minuscule, taking approximately one second for light to release any photoelectrons. This contradicts observed phenomena, suggesting that the wave model of light is inadequate in explaining the photoelectric effect. Consequently, this observation prompted the development of the concept of the photon, which comprises discrete bundles, or quanta, of energy. The model is named as quantum model. The photon carries both energy and momentum, with the energy W_p being proportional to the frequency v, as expressed in equation 2.

> (2)

Where h is the plank’ s constant and is given

When a material exposes to a light radiation (100) (flux of energy), certain electrons acquire energy from the incident energy beam and create a current, called photo current (Figure 1). When this flux of energy hits a semiconductor junction (101), boundary made by combing two semiconductors, primary and secondary (102, 103), the absorption of photons in the beam will drive the electrons (104) in semiconductor junction from its valence band to conduction band and these electrons are available to generate electric current (105). The generated current in the PV cell is taken out from the electrical contact (106) as shown in the Figure 1.

PV solar cell [5] [6] uses above mention model to describe the generation of electric current at certain potential, and thereby power, due to the solar radiation.

It is assumed that the photogene rated current (I_Ph) is given by

In this context, A represents the area of the solar cell, q denotes the charge of an electron, and f_ro is a dimensionless factor dependent on the diameter of the sun and its distance from Earth, with a value of 2.18xl0^-5. The symbol represents a function of E_g, the energy gap, and T_s, the equivalent blackbody temperature of the sun. In the given model each photon generates precisely one electron, contributing to the photocurrent I_Ph. However, experimental investigations have revealed a nonlinear relationship between the conversion efficiency of silicon solar cells and the intensity of incoming solar radiation. This observation has prompted further investigation into the operational principles of the PV cell. The proposed invention is based on the practice outcome of the above-mentioned experimental investigation.

A conventional PV cell (Figure 2) contains two types of semiconductors, p and n, and for the sake of clarity in the proposed invention semiconductors identified as p primary (102) and n secondary (103) which are merged together to form a semiconductor interface (101) which is referred to a semiconductor junction. Electrons (104) are released from n type semiconductor by absorbing energy from incoming solar radiation. These free electrons travel from p to n making a flow of electron (flowing current) when an extremal circuit (105) are made between electrical contacts (106).

According to present invention, it is considered that the atomic distribution between two types of semi-conductors (102 and 103 in Figure 3) situated at both sides in the junction/interface (101) in the PV cell and act as two legs of a dipole antennae (107).

This semiconductor interface also simultaneously acts as semiconductor junction rectifier diodes (108 in Figure 4) leading to convert, induced AC at these dipoles due to (EM) radiation (light), into DC (109) as illustrated in Figure 4.

In a preferred embodiment the method can be used in two dipole antennae configurations (Figure 5a and Figure 6a) to capture energy from the EM waves and covert energy of the incident light in to electrical energy.

Figure 5a shows the operation of dipole configuration. Figure 5a shows the centre conductive layer connections (110,111) for the set of dipole antennae (115) in Figure 5a created by the atomic structure of two types of semi-conductors (102, 103) (p and n) that are separated by non-conductive layer (112) in Figure 5a. Two transparent conductive layers (110, 111) serves as electrical contacts and are separated by non-conductive transparent insulator layer (112). A diode (113) in Figure 5 is introduced between two transparent conductors (101,111) in order to, convert induced AC at the dipoles in Figure 5a due to incident light wave, in to DC. The generated current flows (114) through the circuit. Figure 5b shows lay out. symbolic representation of the orientation of the antenna created by dipole configuration (115) to the incoming EM radiation (100).

Figure 6a illustrates the dipole antennae created at the semi-conductor junction use in a folded dipole configuration. The closed path in Figure 6a created by the electrical contacts (106), semi-conductors (102,103), junction (101) together with external circuit used as a folded dipole configuration in order to absorb and convert energy of the incoming sunlight into electrical energy. The semi-conductor junction diode (108) formed at the semiconductor junction (101) simultaneously leading to convert, induced AC at these dipole antennae due to light wave into DC (116). Figure 6b shows symbolic representation of the orientation of the antenna created by folded dipole configuration (117) to the incoming EM radiation (100).

In both configurations, (Figure 5a and Figure 6a) the equivalent antenna configurations, both dipole (115) and folded dipole (117) respectively are situated parallel to the incoming radiation (Figure 5b and Figure 6b). This is the direction of an antenna (dipole in this case) to place, to induce/absorb minimal power from EM wave (whether dipole or folded dipole from incident radiation). Theoretically, the power induced at this configuration (Figure 5b and Figure 6b) is nearly zero.

In theoretical explanations as well as experimental observations, it is proven that the induction of power is maximum when the antenna in the preferred embodiment dipole (Figure 7a) or folded dipole (Figure 7b) is placed perpendicular to the direction of propagation of the incident EM wave (118,120) as shown in Figure 7b and 7b. However, practically, it is difficult to achieve the given dimension of the antenna (dipole/folded dipole or otherwise) as the order of the wave length, X of the incoming solar radiation is relatively small. In this situation, the wave-length is in the order of around 500 nm (half wave length X/2 is around 25 nm) (119) and this is difficult to achieve in a practical design.

Therefore, in the proposed invention to increase the power induced from the incoming radiation is archived by tilting the antenna configurations, as shown in Figure 8a (in a preferred embodiment dipole (Figure 8b) and folded dipole (Figure 8c) in angle 0 (121) as shown in Figures 8. For the practical implementation, it is considered folded dipole antenna configuration (Figure 8c) is preferred over dipole configuration (Figure 8b).

The 2-dimensional (2D herein) visualization of proposed single unit is shown in Figure 9. The surface (122) of the light (100) incident perpendicular (123) in order to receive the maximum transmission into the substrate.

Then the transmitted light hit upon the tilted interfaces (124) containing tilted dipole antennae (125) with an angle 9 (121).

This single 2D shaped geometry is contained two tilted surfaces (124) of 9 (121). Upon embossing on the primary semiconductor, the secondary semiconductor layer is formed in a manner described below. Thereafter, electrical contacts (106) are made in order to extract converted energy as electrical current out of the PV cell.

As illustrated in Figure 9, the tilted antennae configuration (125) is achieved by imprinting 3- dimensional (3D herein) geometry inside the substrate (Figure 10), increases the energy absorption, reception and conversion efficiency from incoming EM radiation to electrical energy more effectively. Figure 10a provides for a single tilted 3D surface created in a substrate. The conversion efficiency depends on the inclining or tilting angle 9 (121) (Figure 10a) of the surface of the imprinted 3D geometry. The imprinted pattern can have any shape of 3D geometry including any solid cone multi-facet polyhedron shape (126) (Figure 10a) etc. The multiple shapes/units are distributed throughout the surface area to harvest energy (Figure 10b). The density (127), distance (d) between such geometries (128), pattern of the placement at the interface/junction surface (127) are factors to be considered for absorption and conversion of incoming solar energy.

Geometry on the inclining surface structure (129) as shown in Figure I la can be achieved conventionally by a chemical method. In the given chemical method, certain material is removed (129) from the primary semiconductor by masking and chemical etching. Figure 1 lb provides for the chemical etching method to obtain the desired incline structure throughout the entire interface surface. On formation of the preferred structure, a secondary semiconductor (103) is formed on the top of the primary semiconductor (102) using doping methods (130) such as chemical vapor absorption, ion bombardment, ion implanting and sputtering. Connecting electrodes (106) are placed on both sides of the prepared semiconductor interface as shown in Figure 11c to complete the folded dipole configuration.

According to the novel method introduced in the proposed invention, the surface preparation of inclined configuration is made by a mechanical method as shown in Figure 12 (a)-(c). It is expected that two objectives are being achieved by the mechanical configuration of the surface;

1. Increased effective surface area due to new 3D configuration of the interface provides for an expanded reception and energy production surface that provides for efficient absorption, reception and conversion of solar radiation.

2. Correctly oriented and tilted antenna interface provides optimum orientation to capture the incoming radiation, that also cause increased reception, absorption and conversion of solar radiation.

Surface geometry preparation of the primary semiconductor (102) using the mechanical method can be achieved with uniformly heated metal tips (131) having higher melting temperature than the primary doped semiconductor sheet (102) (Figure 12a) is pressed (132) against the primary semiconductor sheet (Figure 12b) to obtain the desired inclined configured surface structure (133) (Figure 12c). This method provides for regular shapes or uniform patterns formed on the primary semiconductor.

The desired configuration can be of different solid shapes (Figure 13) and can be placed in different patterns. In a preferred embodiment the as shown in Figure 12 the solid configuration of the embossing/imprinting tool (134) can have any shape or form including solid cone (135) (Figure 13a) to multifaceted (136) polygon (Figure 13b) with various tilted angles 9 (121) (Figure 13c). The tilting angle can also contain multiple tilting angles (137) as shown in Figure 13d.

When the embossing tool (134) at a high temperature T (138) is being placed on the primary semiconductor, atoms of the embossing material perform doping as shown in Figure 14. Atoms (139) of the heated embossing tool (134) transfer (140 shows transfer path) into the primary semiconductor (102) and create a secondary semiconductor (103) on the top of the primary semiconductor (102). In another preferred embodiment imprinting could be done by sound waves, laser engraving or any other similar means to imprint the geometric configuration. In Figure 15a the embossing tool (134) are wetted (Figure 15b and 15c) with a doping material (141) through the embossing tool. In the given preferred embodiment doping atoms (139) from doping material (141) painted (142) in embossing tool, transfer (140 shows transfer path) into the primary semiconductor (102) (doping) and create the secondary semiconductor layer (103) on top the primary semiconductor.

In another preferred embodiment as shown in Figures 16a and 16b a doping material (141) is simultaneously being injected (143) through the injection-embossing tool (144). The injected doping atoms (141) through embossing tool (134), transfer (140 shows transfer path) (Figure 16b) into the primary semiconductor (102) (doping) and create the secondary semiconductor layer (103) on top the primary semiconductor (Figure 16c).

Further, as shown in Figure 17 embossing tool (134) can make the desired pattern on top of the primary semiconductor (102) (Figure 17a and 17b) and then secondary semiconductor layer is created (Figure 17c) using traditional doping methods (130) such as chemical vapor absorption, ion bombardment, ion implanting and sputtering as discussed in Figure 11. This is shown in Figure 17 c.

Figure 18 shows the increased effective surface (145) are due to tilted surface interface structure. The new area due to angle 9 (121) is directly proportional to the Cosine value of angle 9 (121). Increase new area for two-dimensional (146) and three-dimensional (147) configurations are I /Cos9 > I and n 1² + n I ((^ Sin0)² + ^²)^1/2 > n 1² are respectively. (. is the radius of projection of tilted surface.

Figure 19 provides the proposed invention (148) where tilted geometric arrangement is fabricated on the primary semiconductor, which ultimately form the interface/junction, by creating a secondary semiconductor by using a mechanical method.

REFERENCES

[1] Clean energy reviews; https://www.cleanenergyreviews.info/blog/most-efficient-solar- panels

[2] Thomas Young, “The bakerian lecture: On the theory of light and colours,” Philosophical transactions of the Royal Society of London 92, 12-48 (1802).

[3] Max Planck, “U " ber irreversible strahlungsvorga' nge,” An- nalen der Physik 306, 69-122 (1900).

[4] J Clerk Maxwell, “A dynamical theory of the electromagnetic field.” Proceedings of the Royal Society of London 13, 531-536 (1863).

[5] Jenny Nelson (2003). The Physics of Solar Cells. Imperial College Press. ISBN 978-1- 86094-340-9.

[6] Sayigh, A.A.M., “Generating Electricity from the Sun,” Renewable Energy Series, Pergam on Press, Oxford, 1991.

Claims

1. A device for efficiently absorbing, receiving and converting electromagnetic energy into a usable form of energy, wherein the said device contains one or more of antennae fabricated at a junction made of one or more material.

2. The device for efficiently absorbing, receiving and converting electromagnetic energy into a usable form of energy in claim 1, wherein the said device is an energy conversion cell.

3. The device for efficiently absorbing, receiving and converting electromagnetic energy into a usable form of energy in claims 1-2, wherein the said device is a photovoltaic cell.

4. The device for efficiently absorbing, receiving and converting electromagnetic energy into a usable form of energy in claims 1-3, wherein the said the said usable energy form is electrical energy.

5. A device for efficiently absorbing, receiving and converting electromagnetic energy into a usable form of energy in claims 1-4, wherein the electromagnetic energy is solar radiation energy.

6. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-5, wherein the material is a semiconductor.

7. The device for efficiently absorbing, receiving and converting electromagnetic energy into a usable form of energy in claims 1-6, wherein the junction is a semiconductor p- n junction.

8. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1- 7, wherein the electromagnetic energy is captured by a dipolar antenna.

9. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-7, wherein the electromagnetic energy is captured by a folded dipolar antenna.

10. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-9, wherein the one or more antennae units is tilted.

11. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-10, wherein the tilted interface of one or more antennae units extends the effective energy capture area.

12. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-11, wherein the solar energy received is absorbed, received and converted by the one or more tilted antennae units to a useful form of energy.

13. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-12, wherein the efficiency of absorbing electromagnetic energy depends on the tilting angle of the one or more antennae units.

14. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-13, wherein the efficiency of absorbing electromagnetic energy depends on the density of the tilted one or more antennae units.

15. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-14, wherein the efficiency of absorbing electromagnetic energy depends on the depth and/or hight of one or more antennae units.

16. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-15, wherein the plurality of antennae units are fabricated by a chemical method.

17. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-15, wherein the plurality of antennae is fabricated by a mechanical method.

18. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-17, wherein a secondary semiconductor is fabricated on the primary semiconductor using chemical or mechanical method.

19. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable form in claims 1-18, wherein the tilted antennae is configured by the removal of material from the surface by masking and chemical etching and a secondary semiconductor is fabricated by methods including chemical vapour, absorption, ion bombardment, ion implanting and sputtering.

20. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1- 18, wherein the tilted antennae is configured by the imprinting the desired three-dimensional antenna units by methods including thermal, ultrasounds, waves and laser.

21. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18 and 20, wherein the tilted antennae is configured by imprinting with heated tools on the primary semiconductor.

22. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18 and 20-21, wherein the tilted antennae is configured by the placement of heated tools which are uniform in shape.

23. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18 and 20-21, wherein the tilted antennae is configured by the placement of heated tools of various shapes and/or faces.

24. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18, 20-23, wherein the tilted antennae is imprinted by heated tools with a regular pattern.

25. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18, 20-23, wherein the tilted antennae is imprinted by heated tools with an irregular pattern.

26. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18,20-25, wherein, wherein the tilted antennae is configured by the imprinting of heated tools where a single tool contains several tilted angles.

27. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18, wherein the imprinting by the heated tools on the primary semiconductor fabricates, a secondary semiconductor on the primary semiconductor by self-transferring of materials of the imprinting tool to the primary semiconductor.

28. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1 -18, wherein the imprinting tools are wetted with a doping material and imprinting on the primary semiconductor to fabricate a secondary semiconductor on the primary semiconductor by the transfer of wetted doping material.

29. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1 -18, wherein a doping material is injected through the imprinting tool to the primary semiconductor to fabricate a secondary semiconductor on the primary semiconductor.

30. The method of manufacturing a device for absorbing, receiving and converting electromagnetic energy into a usable energy form in claims 1-18, wherein the desired pattern is fabricated on the primary semiconductor by the imprinting tool and the secondary semiconductor is fabricated by methods including chemical vapour, absorption, ion bombardment, ion implanting and sputtering.

31. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-22, 24, 26-29 wherein the geometric three- dimensional shapes of the tilted antennae units are symmetric.

32. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-22, 23,25, 26-29, wherein the geometric three-dimensional shapes of the one or more tilted antennae units are asymmetric.

33. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-32, wherein one or more tilted antenna units contains geometric three -dimensional shapes including solid cone multi-facet polyhedron.

34. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1 - 33, wherein a single unit of tilted antenna contains a single face.

35. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-33, wherein a single unit of tilted antenna contains plurality of faces.

36. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1 -53, wherein the plurality of faces contains plurality of tilted angles.

37. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-22, 24, 26-29, wherein the distance between two units of tilted antenna is equal.

38. The device for efficiently absorbing, receiving and converting electromagnetic energy in into a usable form of energy in claims 1-22, 24, 26-29, wherein the distance between two units of tilted antenna is unequal.