WO2025150884A1 - Gas injection apparatus, substrate processing apparatus, and thin film formation method - Google Patents

Abstract

The present invention relates to a gas injection apparatus, a substrate processing apparatus, and a thin film formation method and, more specifically, to a gas injection apparatus, a substrate processing apparatus, and a thin film formation method, which are for depositing a thin film by injecting gas onto a substrate. The gas injection apparatus according to an embodiment of the present invention comprises: a first plate having first gas supply ports capable of supplying a first gas and second gas supply ports capable of supplying a second gas; a second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of openings arranged to be offset from the first gas supply ports and the second gas supply ports, wherein the openings include: first openings formed on the first plate side; and second openings connected to the first openings and having a length equal to or smaller than that of the first openings.

Description

Gas injection device, substrate processing device and thin film forming method

The present invention relates to a gas injection device, a substrate processing device, and a thin film forming method, and more particularly, to a gas injection device, a substrate processing device, and a thin film forming method for depositing a thin film by injecting gas onto a substrate.

In general, semiconductor devices or display devices are manufactured by depositing various materials in the form of thin films on a substrate and patterning them. To this end, several different processes are performed, such as a deposition process, an etching process, a cleaning process, and a drying process.

Here, the deposition process is for forming a thin film having properties required for a semiconductor element or display device on a substrate. This deposition process is generally performed by a substrate processing device that uses a gas injection device having multiple nozzles formed to inject process gas to form a thin film on a substrate through a chemical reaction.

In forming a thin film on a substrate using a gas injection device having multiple nozzles formed in this way, securing deposition uniformity is a very important issue. Accordingly, the demand for a gas injection device having an improved aperture structure for depositing a uniform thin film is continuously increasing.

(Prior art literature)

Korean Patent Publication No. 10-2004-0104197

The present invention provides a gas injection device capable of depositing a uniform thin film, a substrate processing device, and a thin film forming method.

A gas injection device according to an embodiment of the present invention comprises: a first plate having a first gas supply port capable of supplying a first gas and a second gas supply port capable of supplying a second gas; and a second plate having a plurality of openings electrically insulated from the first plate, spaced apart from the first plate, and arranged in an interleaved manner with respect to the first gas supply port and the second gas supply port, wherein the openings include: a first opening formed on a side of the first plate; and a second opening connected to the first opening and having a length equal to or shorter than that of the first opening.

In the first plate, a first gas movement path capable of moving the first gas to the first gas supply port and a second gas movement path capable of moving the second gas to the second gas supply port may be separately provided.

The second plate may be spaced apart from the first plate by a distance of 3 mm or less.

The length of the first opening may be less than or equal to twice the length of the second opening.

The diameter of the second opening may be 5 to 20 times the diameter of the first opening.

The diameter of the first opening may be 0.5 to 3.0 mm.

The diameter of the second opening may be from 3 to 80 mm.

The thickness of the second plate may be 10 to 500 mm.

The above openings can be arranged at intervals of 12 to 20 mm.

The second opening may include a connecting portion connected to the first opening.

The above connecting portion may have a shape in which the diameter increases from one end connected to the first opening to the other end.

In addition, a substrate processing device according to an embodiment of the present invention includes: a chamber; a substrate support device installed inside the chamber to support at least one substrate provided into the chamber; one of the aforementioned gas injection devices installed inside the chamber to inject gas toward the substrate support device; and a power device connected to the gas injection device to supply power to the gas injection device.

The above power supply can be connected to the first plate or the second plate to supply power.

The gas injection device may include a first region and a second region corresponding to an outer side of the first region, and the second region may include a region that injects gas toward the substrate support device.

The gas injection device may include a first region and a second region corresponding to an outer side of the first region, and the second region may include a region to which power is supplied from the power device.

In addition, a thin film forming method according to an embodiment of the present invention is a thin film forming method that forms a thin film using any one of the gas injection devices described above, wherein a first gas is supplied through the first gas supply port and a second gas is supplied through the second gas supply port to form a thin film on a substrate.

By supplying the first gas and the second gas, a thin film can be formed on a substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

The above thin film may include at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a High-K thin film, a silicon oxide (SiO ₂ ) thin film, and a silicon nitride (SiN) thin film.

According to an embodiment of the present invention, the occurrence of foreign substances inside a gas injection device for injecting process gas can be minimized.

In addition, high-density plasma can be formed to deposit high-quality thin films, and the gap between the openings that inject process gases can be minimized to improve deposition uniformity.

FIG. 1 is a drawing schematically showing a substrate processing device according to an embodiment of the present invention.

FIG. 2 is a drawing showing the arrangement structure of an opening in a gas injection device according to an embodiment of the present invention.

FIG. 3 is a drawing showing how a supply port and an opening are formed in a gas injection device according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the embodiments of the present invention are provided only to ensure that the disclosure of the present invention is complete and to fully inform a person having ordinary skill in the art of the scope of the invention.

When it is referred to throughout the specification that a component, such as a layer, film, region or substrate, is positioned “on” another component, it can be interpreted that the component is either directly “on” the other component, or there may be other components intervening therebetween.

Additionally, relative terms such as "upper" or "lower" may be used herein to describe the relative relationship of certain elements to other elements as depicted in the drawings. It will be understood that relative terms are intended to include other orientations of the elements in addition to the orientation depicted in the drawings. In order to illustrate the invention in detail, the drawings may be exaggerated, and like reference numerals throughout the drawings refer to like elements.

FIG. 1 is a drawing schematically showing a substrate processing device according to an embodiment of the present invention. In addition, FIG. 2 is a drawing showing the arrangement structure of an opening in a gas injection device according to an embodiment of the present invention, and FIG. 3 is a drawing showing how a supply port and an opening are formed in a gas injection device according to an embodiment of the present invention.

Referring to FIGS. 1 to 3, a substrate processing apparatus according to an embodiment of the present invention includes a chamber (10), a substrate support device (20) provided within the chamber (10) and installed within the chamber (10) to support a substrate (S) provided within the chamber (10), a gas supply device (300) installed within the chamber (10) to inject gas to the substrate support device (20), and a power supply device (400) connected to the gas injection device (300) to supply power to the gas injection device for generating plasma within the chamber (10). In addition, the substrate processing apparatus may further include a control device (not shown) for controlling the power supply device (400).

The chamber (10) provides a predetermined reaction space and maintains it airtight. The chamber (10) may include a body (14) having a predetermined reaction space, including a plane portion of approximately circular or rectangular shape and a side wall portion extending upward from the plane portion, and a lid (12) positioned on the body (14) in an approximately circular or rectangular shape to maintain the reaction space airtight. However, the chamber (10) is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate (S).

An exhaust port (not shown) may be formed in a predetermined area on the lower surface of the chamber (10), and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber (10). In addition, the exhaust pipe may be connected to an exhaust device (not shown). A vacuum pump such as a turbo molecular pump may be used as the exhaust device. Accordingly, the inside of the chamber (10) may be vacuum-sucked to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less, by the exhaust device. The exhaust pipe may be installed not only on the lower surface of the chamber (10), but also on the side of the chamber (10) below the substrate support device (200) described below. In addition, it goes without saying that a plurality of exhaust pipes and exhaust devices corresponding thereto may be further installed in order to reduce the exhaust time.

Meanwhile, a substrate (S) provided into a chamber (10) for a substrate processing process, for example, a thin film deposition process, may be mounted on the substrate support device (200). The substrate support device (200) may be provided with, for example, an electrostatic chuck to hold the substrate (S) by electrostatic force so that the substrate (S) may be mounted and supported, or the substrate (S) may be supported by vacuum suction or mechanical force.

The substrate support device (200) may be provided in a shape corresponding to the shape of the substrate (S), for example, a circle or a square. The substrate support device (200) may include a substrate support (22) on which the substrate (S) is mounted, and an elevator (24) disposed below the substrate support (22) to raise and lower the substrate support (22). Here, the substrate support (22) may be manufactured to be larger than the substrate (S), and the elevator (24) may be provided to support at least one area of the substrate support (22), for example, the center, and may move the substrate support (22) closer to the gas injection device (300) when the substrate (S) is mounted on the substrate support (22). In addition, a heater (not shown) may be installed inside the substrate support (22). The heater generates heat to a predetermined temperature and heats the substrate support (22) and the substrate (S) mounted on the substrate support (22), thereby allowing a thin film to be uniformly deposited on the substrate (S).

The substrate support device (200) as described above can support at least one substrate (S) provided into the chamber (10). That is, the substrate support device (200) can support one substrate (S) as illustrated in FIG. 1, or can support a plurality of substrates (S) although not illustrated. In this case, the substrate support device (200) can support a plurality of substrates (S) in a second region, for example, an outer region, which is arranged outside a first region, for example, a central region. At this time, the outer region can be arranged to surround the central region. Accordingly, the central region can be arranged inside the outer region. For example, when the central region is formed in a circular shape, the outer region can be formed in a circular ring shape surrounding the central region. Here, the plurality of substrates (S) can be arranged to be spaced apart from each other along the outer region. For example, a plurality of substrates (S) may be supported on a support surface so as to be spaced apart from each other at the same angle with respect to a central axis of the substrate support (22) in the outer region. The substrate support (22) may be rotated around the central axis while a processing process is performed. When the support surface is formed in a circular shape, the central axis may correspond to the center of the support surface. Meanwhile, since a plurality of substrates (S) are supported on the support surface in the outer region, the substrates (S) may not be positioned in the central region.

A gas providing device may be installed in the lid (12) of the chamber (10). The gas providing device may be installed so as to penetrate the lid (12) of the chamber (10), and may include a first gas providing unit (110) and a second gas providing unit (120) to provide a first gas and a second gas to the gas injection device (300), respectively. Here, the first gas may include a source gas, and the second gas may include a reaction gas. However, the present invention is not limited thereto, and the first gas may include a reaction gas, the second gas may include a source gas, or at least one of the first gas and the second gas may include a mixed gas in which the source gas and the reaction gas are mixed. In addition, it goes without saying that at least one of the first gas and the second gas may be a purge gas. That is, the first gas providing unit (110) and the second gas providing unit (120) do not necessarily provide only one gas, and the first gas providing unit (110) and the second gas providing unit (120) may be configured to supply multiple gases simultaneously or to supply a gas selected from among the multiple gases.

The gas injection device (300) is installed inside the chamber (10), for example, on the lower surface of the lid (12), and a first gas supply path for supplying a first gas by injecting it onto a substrate and a second gas supply path for supplying a second gas by injecting it onto a substrate are formed inside the gas injection device (300). The first gas supply path and the second gas supply path are provided to be independent and separate from each other, so that the first gas and the second gas can be supplied to the substrate separately without being mixed inside the gas injection device (300).

More specifically, the gas injection device (300) includes a first plate (310, 320) having a first gas supply port (312) capable of supplying a first gas and a second gas supply port (314) capable of supplying a second gas, and a second plate (330) electrically insulated from the first plate (310, 320), spaced apart from the first plate (310, 320), and having a plurality of openings (332) arranged alternately with the first gas supply ports (312) and the second gas supply ports (314). Here, the first gas supply port (312) is connected to the first gas supply path, and the second gas supply port (314) is connected to the second gas supply path.

The first plate can operate as a first electrode for generating plasma in the reaction space by supplying power to the first plate or the second plate described below. As such, the first plate can be referred to as a first electrode.

The first plate may include an upper frame (310) and a lower frame (320). Here, the upper frame (310) is detachably attached to the lower surface of the lead (12) and, at the same time, a portion of the upper surface, for example, a center of the upper surface, is spaced apart from the lower surface of the lead (12) by a predetermined distance. Accordingly, the first gas provided from the first gas providing unit (110) can diffuse in the space between the upper surface of the upper frame (310) and the lower surface of the lead (12). In addition, the lower frame (320) is installed spaced apart from the lower surface of the upper frame (310) by a predetermined distance. Accordingly, the second gas provided from the second gas providing unit (120) can diffuse in the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310). The upper frame (310) and the lower frame (320) may be formed integrally so that a separation space is provided inside by being connected along the outer surface, and may also be formed to have a structure in which the outer surface is sealed by the first sealing member (350). In this case, the first sealing member (350) may be formed of an insulating material for electrically insulating the upper frame (310) and the lower frame (320) from each other, or conversely, may be formed of a conductive material for electrically connecting the upper frame (310) and the lower frame (320) from each other.

The first gas supply path may be formed so that the first gas provided from the first gas provider (110) diffuses in the space between the lower surface of the lid (12) and the upper frame (310), penetrates the upper frame (310) and the lower frame (320), and is supplied into the chamber (10). At this time, the first gas supply port (312) may be formed connected to the first gas supply path, and may be formed so as to penetrate the upper frame (310) and the lower frame (320) so as to be isolated from the space between the upper surface of the upper frame (310) and the lower surface of the lid (12) and the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

In addition, the second gas supply path may be formed so that the second gas provided from the second gas provider (120) diffuses in the space between the lower surface of the upper frame (310) and the upper surface of the lower frame (320) and is supplied into the chamber (10) by penetrating the lower frame (320). At this time, the second gas supply port (322) may be formed by being connected to the second gas supply path, and may be formed by penetrating the lower frame (320) at the lower portion of the space between the lower surfaces of the upper frame (310).

Accordingly, the first gas supply path and the second gas supply path may not be connected to each other, and the first gas and the second gas may be separately supplied from the gas supply device through the first plate to the lower side of the first plate.

The second plate may act as a second electrode for generating plasma in the reaction space by supplying power to the first plate or the second plate. As such, the second plate may be referred to as a second electrode.

The second plate (330) is insulated from the first plate and can be installed spaced apart from the lower side of the first plate. That is, the second plate (330) is insulated from the lower frame (320) and can be installed spaced apart from the lower side of the lower frame (320). The second plate (330) is installed spaced apart from the lower side of the lower frame (320) by a predetermined distance (D1). Accordingly, the first gas and the second gas supplied downward through the first plate can diffuse in the space between the upper surface of the second plate (330) and the lower side of the lower frame (320). The lower frame (320) and the second plate (330) can be formed into a structure in which the outer peripheral surface is sealed by the second sealing member (360). At this time, the second sealing member (360) can be formed of an insulating material for electrically insulating the lower frames (320) from each other.

Here, the second plate (330) may be installed below the first plate at a distance such that a plasma sheath region that may be formed on the surface of the first plate, i.e., the lower surface of the lower frame (320), and a plasma sheath region that may be formed on the surface of the second plate (330), i.e., the upper surface of the second plate (330), overlap each other. Here, the plasma sheath region refers to a dark field region where positive (+) ions are densely packed between the plasma and the surface of the structure, so that energy exchange occurs, but plasma is hardly formed.

If the plasma sheath region that can be formed on the lower surface of the lower frame (320) and the plasma sheath region that can be formed on the upper surface of the second plate (330) do not overlap, plasma can be formed between the plasma sheath regions. However, in the embodiment of the present invention, the lower frame (320) and the second plate (330) are spaced apart from each other by a distance such that the plasma sheath region that can be formed on the lower surface of the lower frame (320) and the plasma sheath region that can be formed on the upper surface of the second plate (330) overlap each other, thereby preventing plasma from being generated between the lower surface of the lower frame (320) and the upper surface of the second plate (330).

Meanwhile, as described above, the first gas and the second gas supplied downward through the first plate need to diffuse in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), so the lower surface of the lower frame (320) and the upper surface of the second plate (330) need to be spaced apart by a distance that allows the gas to flow smoothly. Accordingly, the second plate (330) can be spaced apart by a distance of 3 mm or less, for example, 1 to 3 mm, from the first plate. If the second plate (330) is spaced apart from the first plate by less than 1 mm, gas cannot flow smoothly in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), and if it is spaced apart by more than 3 mm, plasma is generated in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), causing particles, which leads to process defects.

In addition, the second plate (330) has a plurality of openings (332) that are arranged alternately with the first gas supply port (312) and the second gas supply port (322) described above. That is, as illustrated in FIG. 2, the second plate (330) has a plurality of openings (332) formed so as not to overlap with any of the first gas supply port (312) and the second gas supply port (322) when the first plate and the second plate (330) are viewed from above or below. Such a plurality of openings (332) may be formed so as to be arranged between the first gas supply port (312) and the second gas supply port (322) along at least one direction when the first plate and the second plate (330) are viewed from above or below. Additionally, the plurality of openings (332) can be formed so as to be respectively positioned at a central position between the first gas supply port (312) and the second gas supply port (322) along at least one direction.

If the opening (332) is arranged to overlap the first gas supply port (312) and the second gas supply port (314), most of the gas supplied from the first gas supply port (312) and the second gas supply port (314) will pass through the opening (332) arranged to overlap the first gas supply port (312) and the second gas supply port (314) and be sprayed, respectively. However, not all of the gas may pass through the opening (332) and be sprayed downward, and some of the gas may not be directly sprayed through the opening (332) but may flow into the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330) and stagnate in the space. Since stagnant gas like this impedes the smooth flow of gas and causes particle formation, in the present invention, a plurality of openings (332) may be formed in the second plate (330) so as to be arranged alternately with the first gas supply port (312) and the second gas supply port (322).

As illustrated in FIG. 3, each of these openings (332) may include a first opening (333) formed on the first plate side and a second opening (335) connected to the first opening (333) and having a larger diameter than the first opening (333). Here, each of the openings (332) may include a first opening (333) formed with a predetermined length (H1) from the upper surface of the second plate (330) facing the first plate and a second opening (335) formed with a predetermined length (H2) from the lower surface of the second plate (330). At this time, the first opening (333) serves as an inlet for gas, and gas diffused in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330) flows into the opening (332) through the first opening (333). On the other hand, the second opening (335) is an outlet for gas, and gas flowing into the opening (332) is sprayed to the lower side of the second plate (330) through the second opening (335). The first opening (333) is arranged alternately with the first gas supply port (312) and the second gas supply port (322), and the second opening (335) may be formed to extend to the lower side of the first opening (333) so as to have a larger diameter than the first opening (333). Meanwhile, the second opening (335) may include a connecting portion (335a) formed so as to have an increased diameter at a connection portion with the first opening (333).

The first opening (333) guides the gas diffused between the lower surface of the lower frame (320) and the upper surface of the second plate (330) to the second opening (335) on the lower side. The first opening (333) has a diameter (D2) selected to uniformly guide the gas diffused between the lower surface of the lower frame (320) and the upper surface of the second plate (330) to each of the second openings (335). At this time, the first opening (333) may have a diameter (D2) that can form a plasma sheath region inside. That is, the first opening (333) may form a plasma sheath region in which almost no plasma is formed inside by completely overlapping a plasma sheath region that can be formed on the inner surface of the second plate (330) forming the first opening (333). For this purpose, the first opening (333) may have a diameter (D2) of 0.5 to less than 3.0 mm. If the diameter (D2) of the first opening (333) is formed to be less than 0.5 mm, gas cannot flow smoothly through the first opening (333), and it becomes difficult to remove particles that may exist within the first opening (333) during in-situ cleaning after substrate processing. On the other hand, if the diameter (D2) of the first opening (333) is formed to be 3.0 mm or more, plasma may be generated within the first opening (333), which may cause clogging by particles.

In this way, the first opening (333) extends from the upper surface of the second plate (330). Here, the length (H1) of the first opening (333) may be set to a range that prevents plasma formed in the second opening (335) described later from penetrating into the space between the first plate and the second plate (330) or the inside of the first plate through the first opening (333), while not unnecessarily increasing the thickness of the second plate (333). To this end, the length (H1) of the first opening (333) may be formed to be the same as the length (H2) of the second opening (335) or longer than the length (H2) of the second opening (335). For example, the length (H1) of the first opening (333) may be 1 to 2 times the length (H2) of the second opening (335). If the length (H1) of the first opening (333) becomes too short, the plasma formed in the second opening (335) may penetrate into the space between the first plate and the second plate (330) or the inside of the first plate through the first opening (333), so that particles may be generated in the space between the first plate and the second plate (330) or the inside of the first plate. In addition, if the length of the first opening (333) becomes too long, the thickness of the second plate (333) in which the first opening (333) is formed unnecessarily increases. Accordingly, the length (H1) of the first opening (333) may be set to be equal to the length (H2) of the second opening (335) or less than twice the length (H2) of the second opening (335).

The second opening (335) is formed by being connected to the lower side of the first opening (333). The second opening (335) generates plasma in the interior of the second plate (330), that is, in a roughly cylindrical space. That is, the second opening (335) provides a large surface area to promote plasma ionization of gas flowing into the second opening (335), thereby generating high-density plasma.

Meanwhile, the second opening (335) may include a connecting portion (335a) formed to have an increasing diameter at a connection portion with the first opening (333). The connecting portion (335a) serves to smoothly transfer gas supplied through the first opening (333) from the upper side of the second opening (335) to the second opening (335). The connecting portion (335a) may have a shape in which a cross-section gradually increases from one end connected to the first opening (333) to the other end, and thereby the gas supplied through the first opening (333) may be guided through the connecting portion (335a) without stagnation and smoothly transferred to the second opening (335). However, the connecting portion (335a) is not an essential component, and if the connecting portion (335a) is omitted, a cylindrical second opening (335) may be directly connected to the lower side of the first opening (333).

In this way, the diameter (D3) of the second opening (335) may be 5 to 20 times the diameter (D2) of the first opening (333). Here, the diameter (D3) of the second opening (335) may mean the average diameter of the second openings (335). If the diameter (D3) of the second opening (335) is less than 5 times the diameter (D2) of the first opening (333), a high-density plasma cannot be formed within the second opening (335). In addition, if the diameter (D3) of the second opening (335) exceeds 20 times the diameter (D2) of the first opening (333), the gap between the second openings (335) increases, making it impossible to deposit a uniform thin film. In order to form a high-density plasma within the second opening (335) while not unnecessarily increasing the gap between the second openings (335), the diameter (D3) of the second opening (335) may preferably be 8 to 10 times the diameter (D2) of the first opening (333).

For example, the second opening (335) may have a diameter (D3) of 3 to 80 mm. The second opening (335) may have a diameter (D3) of 5 to 20 mm. In addition, the second opening (335) may have a diameter (D3) of 10 to 14 mm. If the diameter (D3) of the second opening (335) is formed to be less than 3 mm, high-density plasma cannot be formed. In addition, if the diameter (D3) of the second opening (335) exceeds 80 mm, the gap between the second openings (335) increases, making it impossible to deposit a uniform thin film. If the gap between the second openings (335) increases, the gas injected from each second opening (335) is concentrated at a predetermined position on the substrate (S), which causes deposition unevenness. However, if the spacing between the second openings (335) is reduced, the gases sprayed from each second opening (335) can overlap on the substrate (S), thereby allowing a more uniform thin film to be deposited. In order to deposit a uniform thin film on the substrate (S), the second openings (335) need to be arranged at intervals of 12 to 20 mm, and when the diameter (D3) of the second openings (335) is controlled to 80 mm or less, the second openings (335) can be arranged at intervals of 12 to 20 mm, thereby improving the deposition uniformity.

Meanwhile, the length (H2) of the second opening (335) can be set to a range that can generate high-density plasma while preventing hole damage due to sputtering and facilitating in-situ cleaning. To this end, the length (H2) of the second opening (335) can be formed to be equal to the length of the first opening (333) or shorter than the length (H1) of the first opening (333). For example, the length (H2) of the second opening (335) can be 0.5 to 1 times the length (H1) of the first opening. By making the length (H2) of the second opening (335) equal to or shorter than the length (H1) of the first opening, high-density plasma can be generated within the second opening (335), while preventing the generation of plasma within the first opening (332) and preventing parasitic plasma from being generated within the gap between the first plate and the second plate (330). Here, if the length (H2) of the second opening (335) is formed to be less than 0.5 times the length (H1) of the first opening, sufficient plasma density cannot be achieved. On the other hand, if the length (H2) of the second opening (335) exceeds one time the length (H1) of the first opening, that is, if the length (H2) of the second opening (335) becomes longer than the length (H1) of the first opening, ions generated within the second opening (335) may collide with the inner surface of the second plate (330) forming the second opening (335), which may cause hole breakage due to sputtering. In addition, if the length (H2) of the second opening (335) becomes longer than the length (H1) of the first opening, it becomes difficult to remove particles that may exist within the second opening (335) during in-situ cleaning after substrate processing, and the thickness of the second plate (330) also unnecessarily increases. In order to achieve sufficient plasma density while preventing hole breakage, the length (H2) of the second opening (335) may preferably be 0.65 to 0.85 times the length (H1) of the first opening (333).

Here, the second plate (330) may have various thicknesses depending on the size of the substrate to be processed. Even when the second plate (330) has various thicknesses, the length (H2) of the second opening (335) within the second plate (330) may be maintained at 0.5 to 1 times the length (H1) of the first opening. The second plate (330) may have various thicknesses, but, for example, the second plate (330) may be formed with a thickness of 10 to 100 mm. If the second plate (330) is formed with a thickness of less than 10 mm, the second plate (330) may sag due to its own weight, and if it is formed with a thickness exceeding 100 mm, the weight increases and excessive space is occupied within the chamber (10), which is not good in terms of structural efficiency. Therefore, the second plate (330) may be formed with a thickness of 10 to 100 mm.

The gas injection device (300) may include a first region and a second region corresponding to the outer side of the first region. That is, as described above, when the substrate support device (200) includes a central region and an outer region so as to support a plurality of substrates (S) provided into the chamber (10), the gas injection device (300) may also have a first region, for example, a central region, and a second region, for example, an outer region, disposed outside the first region. Here, the outer region of the gas injection device (300) may overlap at least partly with the outer region of the substrate support device (200), and the inner region of the gas injection device (300) may overlap at least partly with the inner region of the substrate support device (200). At this time, the outer region of the gas injection device (300) may be disposed to surround the central region, and the outer region of the gas injection device (300) may include a region that injects gas toward the substrate support device (200). That is, the outer region of the gas injection device (300) may be a region that injects gas toward the outer region of the substrate support device (200). Meanwhile, the outer region of the gas injection device (300) may be a region where gas can be injected, and the central region may be a region where gas is not injected. As such, the outer region of the gas injection device (300) may include a region where power is supplied from the power supply device (400). That is, the outer region of the gas injection device (300) may be a region that is electrically connected to the power supply device (400) to be described later and where power is supplied from the power supply device (400). Meanwhile, the outer region of the gas injection device (300) may be a region where power can be supplied, and the central region may be a region where power is not supplied.

The power supply (400) can be connected to the gas injection device (300) to supply power to the gas injection device for generating plasma within the chamber (10). That is, the power supply (400) can supply RF power for generating plasma within the chamber (10).

Here, the power supply (400) is connected to the second plate (330) to supply RF power only to the second plate (330), and the first plate can be grounded. At this time, the first plate and the second plate (330) can be insulated by a second sealing member (360) formed of an insulating material. In this way, when the power supply (400) supplies RF power to the second plate (330) and the first plate is grounded, the first plate and the second plate (330) each form an electrode for generating a capacitively coupled plasma (CCP). In addition, the substrate support (22) is also grounded, so that a capacitively coupled plasma can be generated between the second plate (330) and the support (22). Alternatively, the power supply (400) may also supply power to the first plate and the second plate (330), in which case the power supply (400) may be configured to supply RF power to each of the first plate and the second plate (330).

By using the substrate processing device of the present invention, a first gas is supplied through a first gas supply port, and a second gas is supplied through a second gas supply port, so that a thin film can be formed on a substrate (S) by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. At this time, the thin film formed by the chemical vapor deposition method or the atomic layer deposition method may include at least one of an indium (In)-doped zinc oxide (ZnO) thin film, a GZO thin film, a gallium (Ga)-doped zinc oxide (ZnO), an IGZO thin film, a thin film doped with indium (In) and gallium (Ga) in zinc oxide (ZnO), a thin film having a high dielectric constant (High-K), a silicon oxide (SiO ₂ ) thin film, and a silicon nitride (SiN) thin film.

First, when forming a thin film on a substrate (S) by a chemical vapor deposition method, a raw material gas and a reaction gas can be supplied simultaneously onto the substrate (S). At this time, the first gas may include a raw material gas, and the second gas may include a reaction gas. However, it is not limited thereto, and the first gas may include a reaction gas, the second gas may include a raw material gas, or at least one of the first gas and the second gas may include a mixed gas in which the raw material gas and the reaction gas are mixed. In addition, it goes without saying that at least one of the first gas and the second gas may be a purge gas. At this time, by supplying RF power to the gas injection device (300) through the power supply device (400), plasma can be formed within the chamber (10), thereby improving the deposition efficiency.

Meanwhile, when forming a thin film on the substrate (S) by the atomic layer deposition method, the raw material gas and the reaction gas may be alternately supplied onto the substrate (S). At this time, the first gas may include the raw material gas and the second gas may include the reaction gas, or the first gas may include the reaction gas and the second gas may include the raw material gas. In addition, it goes without saying that at least one of the first gas and the second gas may be a purge gas. At this time, the step of supplying the raw material gas, the step of supplying the purge gas, the step of supplying the reaction gas, and the step of supplying the purge gas form one process cycle, and the process cycle may be repeated multiple times to deposit a thin film on the substrate (S). At this time, plasma may be formed within the chamber (10) by supplying RF power to the gas injection device (300) through the power supply device (400), and this may be performed in the step of supplying the reaction gas to improve the deposition efficiency.

In this way, when forming a thin film on a substrate (S) by chemical vapor deposition or by atomic layer deposition, plasma can be generated between the first plate and the second plate (330) by supplying RF power to the gas injection device (300) through the power supply device (400), and plasma can also be generated inside the second plate (330). In addition, high-density capacitively coupled plasma can be generated between the second plate (330) and the substrate support (330).

In this way, according to an embodiment of the present invention, the occurrence of foreign substances inside a gas injection device for injecting process gas can be minimized.

In addition, high-density plasma can be formed to deposit high-quality thin films, and the gap between the openings that inject process gases can be minimized to improve deposition uniformity.

Although the preferred embodiments of the present invention have been described and illustrated using specific terms above, such terms are only for the purpose of clearly describing the present invention, and it is obvious that the embodiments of the present invention and the described terms may be variously changed and modified without departing from the technical spirit and scope of the following claims. Such modified embodiments should not be understood individually from the spirit and scope of the present invention, but should be considered to fall within the claims of the present invention.

Claims (18)

A first plate having a first gas supply port capable of supplying a first gas and a second gas supply port capable of supplying a second gas; and A second plate electrically insulated from the first plate, spaced apart from the first plate, and having a plurality of openings arranged in an interlocked manner with respect to the first gas supply port and the second gas supply port; The above opening is, a first opening formed on the first plate side; and A gas injection device comprising a second opening connected to the first opening and having a length equal to or shorter than the first opening. In claim 1, A gas injection device in which a first gas movement path capable of moving the first gas to the first gas supply port and a second gas movement path capable of moving the second gas to the second gas supply port are separately provided in the first plate. In claim 1, The second plate is a gas injection device spaced apart from the first plate by a distance of 3 mm or less. In claim 1, A gas injection device wherein the length of the first opening is less than twice the length of the second opening. In claim 1, A gas injection device wherein the diameter of the second opening is 5 to 20 times the diameter of the first opening. In claim 1, A gas injection device wherein the diameter of the first opening is less than 0.5 to 3.0 mm. In claim 1, A gas injection device wherein the diameter of the second opening is 3 to 80 mm. In claim 1, A gas injection device wherein the thickness of the second plate is 10 to 500 mm. In claim 1, The above openings are gas injection devices arranged at intervals of 12 to 20 mm. In claim 1, The above second opening, A gas injection device comprising a connecting portion connected to the first opening. In claim 10, The above connecting portion is a gas injection device having a shape in which the diameter increases from one end connected to the first opening to the other end. chamber; A substrate support device installed inside the chamber to support at least one substrate provided into the chamber; A gas injection device according to any one of claims 1 to 11, installed inside the chamber to inject gas toward the substrate support device; and A substrate processing device comprising a power supply device connected to the gas injection device to supply power to the gas injection device. In claim 12, A substrate processing device wherein the power supply is connected to the first plate or the second plate to supply power. In claim 12, The gas injection device comprises a first region and a second region corresponding to the outer side of the first region, A substrate processing device, wherein the second region includes a region for injecting gas toward the substrate support device. In claim 12, The gas injection device comprises a first region and a second region corresponding to the outer side of the first region, A substrate processing device, wherein the second region includes a region to which power is supplied from the power supply device. A method for forming a thin film by using any one of the gas injection devices of claims 1 to 11, A thin film forming method for forming a thin film on a substrate by supplying a first gas through the first gas supply port and supplying a second gas through the second gas supply port. In claim 16, A method for forming a thin film by supplying the first gas and the second gas to form a thin film on a substrate by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. In claim 16, The above thin film is a method for forming a thin film including at least one of an IZO thin film in which indium (In) is doped into zinc oxide (ZnO), a GZO thin film in which gallium (Ga) is doped into zinc oxide (ZnO), an IGZO thin film in which indium (In) and gallium (Ga) are doped into zinc oxide (ZnO), a High-K thin film, a silicon oxide (SiO ₂ ) thin film, and a silicon nitride (SiN) thin film.