WO2025126868A1 - Light-emitting device, light-emitting module, method for producing light-emitting device, and method for producing light-emitting module - Google Patents

Abstract

Provided are a light-emitting device, a light-emitting module, a method for producing a light-emitting device, and a method for producing a light-emitting module that are capable of improving production yield while also achieving an improvement in light output.　The present invention comprises: a light-emitting element (13) that includes a light-emitting layer which emits light; a first dielectric multilayer film (39) that is formed along a side surface of the light-emitting element (13); a plate-like fluorescent material part (17) that is disposed on the light-emitting element (13) and that includes a fluorescent material which is excited by light emitted from the light-emitting layer and which produces fluorescent light; and a second dielectric multilayer film (43) that is formed along a side surface of the fluorescent material part (17).

Description

Light emitting device, light emitting module, method for manufacturing light emitting device, and method for manufacturing light emitting module

The present invention relates to a light emitting device, a light emitting module, a method for manufacturing a light emitting device, and a method for manufacturing a light emitting module.

A light emitting device has been disclosed that has a light emitting element whose side surfaces are covered with a dielectric multilayer film in order to improve light output. For example, Patent Document 1 discloses a light emitting device that has a support member, multiple semiconductor layers arranged on the support member, and a substrate including a wavelength conversion member arranged on the multiple semiconductor layers, in which the upper surface of the support member, the side surfaces of each of the multiple semiconductor layers, and the side surfaces of the substrate are covered with a dielectric multilayer film.

JP 2015-225862 A

In the light-emitting device disclosed in Patent Document 1, multiple semiconductor layers are bonded to a support member, a substrate is attached to the multiple semiconductor layers, and then a dielectric multilayer film is provided so as to continuously cover the upper surface of the support member and the side surface of the substrate.

In other words, in the light-emitting device disclosed in Patent Document 1, the dielectric multilayer film is provided after the manufacturing of the light-emitting device other than the dielectric multilayer film is completed, so if there is a film formation defect in a part of the dielectric multilayer film, the light-emitting device itself will be defective, and there is a risk of poor manufacturing yield.

The present invention has been made in consideration of the above points, and provides a light emitting device, a light emitting module, a method for manufacturing a light emitting device, and a method for manufacturing a light emitting module that can improve manufacturing yield while achieving improved light output.

The light emitting device according to the present invention is characterized by having a light emitting element including a light emitting layer that emits light, a first dielectric multilayer film formed over the side surface of the light emitting element, a flat phosphor section disposed on the light emitting element and including a phosphor that emits fluorescence when excited by light emitted from the light emitting layer, and a second dielectric multilayer film formed over the side surface of the phosphor section.

FIG. 2 is a top view of the light emitting device according to the first embodiment. 1 is a cross-sectional view of a light emitting device according to a first embodiment. 3A to 3C are perspective views showing a manufacturing process of the light emitting device according to the first embodiment. 4A to 4C are top views showing a manufacturing process of the light emitting device according to the first embodiment. 5A to 5C are cross-sectional views showing a manufacturing process of the light emitting device according to the first embodiment. 5A to 5C are cross-sectional views showing a manufacturing process of the light emitting device according to the first embodiment. 5A to 5C are cross-sectional views showing a manufacturing process of the light emitting device according to the first embodiment. 1 is a cross-sectional view of a light-emitting module as an application example of the light-emitting device according to the first embodiment. FIG. 11 is a cross-sectional view of a light emitting device according to a second embodiment. FIG. 11 is a cross-sectional view of a light emitting device according to a third embodiment. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 11A to 11C are cross-sectional views showing a manufacturing process of the light emitting device according to Example 3. 13 is a graph showing a verification result for the light emitting device according to Example 3. FIG. 11 is a cross-sectional view of a light-emitting module as an application example of the light-emitting device according to the third embodiment.

Below, an embodiment of the present invention will be described in detail with reference to the drawings. Note that the same components in the drawings will be given the same reference numerals, and descriptions of duplicated components will be omitted.

[Outline of the Light Emitting Device 100]
The configuration of a light emitting device 100 according to Example 1 will be described with reference to Figures 1 and 2. Figure 1 is a top view of the light emitting device 100. Figure 2 is a cross-sectional view taken along line 2-2 of the light emitting device 100 shown in Figure 1.

As shown in FIG. 2, the light emitting device 100 is composed of a submount 11, a light emitting element 13 arranged on the submount 11, and a phosphor section 17 arranged on the light emitting element 13. In FIG. 2, the up-down direction in the figure is the height direction of the light emitting device 100, and the left-right direction in the figure is the width direction of the light emitting device 100. In FIG. 2, a center line CL passing through the center of the light emitting device 100 in the width direction is indicated by a dashed line.

[Submount 11]
First, the submount 11 will be described. The submount 11 is an element mounting substrate on which a light emitting element 13, which will be described later, can be mounted. The submount 11 includes a mounting substrate 21, an anode pad 24 and a cathode pad 25 provided on the upper surface of the mounting substrate 21, and an anode mounting electrode 27 and a cathode mounting electrode 28 provided on the lower surface of the mounting substrate 21.

The mounting substrate 21 is a plate-like body made of n-type silicon (Si) with a rectangular top surface. Two through vias 21V are formed in the mounting substrate 21, penetrating the mounting substrate 21 in the vertical direction and having nickel (Ni) and gold (Au) formed in this order on the surface, on either side of the center line CL.

An insulating film 22 is formed over the entire area of the mounting substrate 21 except for the areas on the upper and lower surfaces where the through vias 21V are formed. The insulating film 22 is made of, for example, silicon dioxide (SiO ₂ ).

The anode pad 24 and the cathode pad 25 are a pair of element mounting pads that are spaced apart from each other on the upper surface of the mounting substrate 21 and sandwich the center line CL. The anode pad 24 and the cathode pad 25 are made of copper (Cu) material, and their surfaces are plated with gold (Au).

The anode mounting electrode 27 and the cathode mounting electrode 28 are a pair of mounting electrodes formed at a distance from each other on the underside of the mounting substrate 21, sandwiching the center line CL. The anode mounting electrode 27 and the cathode mounting electrode 28 are made of a Cu material, and their surfaces are plated with Au.

In the submount 11, the anode pad 24 and the anode mounting electrode 27 are electrically connected via the through via 21V, and the cathode pad 25 and the cathode mounting electrode 28 are electrically connected via the through via 21V.

In the submount 11, p-type impurities such as boron (B) are diffused into the impurity diffusion region 21R, which is the region surrounding the through via 21V of the mounting substrate 21. Therefore, around the through via 21V, a double Zener diode ZD (indicated by a two-dot chain line in the figure) is formed by a pn junction between the n-type mounting substrate 21 (n-Si) and the impurity diffusion region 21R (p-Si) in which the p-type impurity has been diffused.

A double Zener diode with this configuration does not distinguish between the anode pad 24 and the cathode pad 25, and operates normally regardless of whether the two electrodes of the light-emitting element 13 are connected to the anode pad 24 or the cathode pad 25. In other words, there is no need to determine the positive and negative poles of the anode pad 24 and the cathode pad 25 when manufacturing the light-emitting device 100, which simplifies the manufacturing process.

[Light-emitting element 13]
Next, a description will be given of the configuration of the light emitting element 13. The light emitting element 13 is disposed on the submount 11 as described above, and is a light emitting diode (LED) having a rectangular upper surface shape.

The light-emitting element 13 includes a semiconductor structure layer 31 having a light-emitting layer, a light-transmitting substrate 32 arranged on the upper surface of the semiconductor structure layer 31, and a p-electrode 34 and an n-electrode 35 arranged on the lower surface of the semiconductor structure layer 31.

The semiconductor structure layer 31 is a semiconductor laminate consisting of an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (none of which are shown), each of which is mainly made of gallium nitride (GaN). When the light-emitting element 13 is driven, blue light with a peak wavelength of 450 nm is emitted from the light-emitting layer of the semiconductor structure layer 31.

The light-transmitting substrate 32 is a flat substrate having a rectangular upper surface. The light-transmitting substrate 32 is made of a material, such as sapphire (Al ₂ O ₃ ) or GaN, that is transparent to the blue light emitted from the light-emitting layer of the semiconductor structure layer 31. The light-transmitting substrate 32 also serves as a growth substrate for the semiconductor structure layer 31. The light-transmitting substrate 32 is also made of a material that is transparent to the fluorescence emitted from the phosphor section 17.

The p-electrode 34 is an electrode that is electrically connected to the p-type semiconductor layer of the semiconductor structure layer 31. The surface of the p-electrode 34 is gold (Au) plated.

The n-electrode 35 is an electrode that is electrically connected to the n-type semiconductor layer via a through electrode (not shown) that vertically penetrates the light-emitting layer and p-type semiconductor layer of the semiconductor structure layer 31 and has a side surface covered with an insulator. In other words, the n-electrode 35 is electrically connected only to the n-type semiconductor layer and is insulated from the light-emitting layer and p-type semiconductor layer. The surface of the n-electrode 35 is Au-plated.

The p-electrode 34 and the n-electrode 35 have the same shape and size as the anode pad 24 and the cathode pad 25, respectively, and are bonded to the anode pad 24 and the cathode pad 25 via solder 37 made of gold-tin (AuSn). That is, in the light-emitting device 100, the light-emitting element 13 is flip-chip mounted on the submount 11.

In the light emitting device 100, the light emitting element 13 has a first dielectric multilayer film 39 formed of a plurality of dielectric films stacked on the side and bottom surfaces. Specifically, the first dielectric multilayer film 39 is formed continuously over the side surfaces of the semiconductor structure layer 31 and the light-transmitting substrate 32 and over the area on the bottom surface of the semiconductor structure layer 31 excluding the p-electrode 34 and the n-electrode 35. In other words, on the bottom surface of the light emitting element 13, the p-electrode 34 and the n-electrode 35 are exposed from the first dielectric multilayer film 39.

The first dielectric multilayer film 39 is formed by alternately stacking, for example, 48 layers (24 pairs) of silicon oxide (SiO ₂ ) and alumina (Al ₂ O ₃ ) so as to have a layer thickness that reflects light with wavelengths in the visible light region. The material of the first dielectric multilayer film 39 may be titanium oxide (TiO ₂ ), niobium oxide (NbO), magnesium oxide (MgO), tantalum oxide (Ta ₂ O ₅ ), hafnium oxide (HfO), etc.

[Phosphor portion 17]
The phosphor part 17 is a rectangular plate-like body having a size, as viewed from above, approximately equal to that of the upper surface of the light-emitting element 13. The lower surface of the phosphor part 17 is adhered to the upper surface of the light-transmitting substrate 32 of the light-emitting element 13 by an adhesive member 41 made of a light-transmitting resin such as silicone resin.

The adhesive member 41 may contain phosphor particles that emit a different color of fluorescence from the phosphor portion 17. For example, the adhesive member 41 may contain phosphor particles of a silicon oxide nitride system, such as CASN (CaAlSiN:Eu) or S-CASN ((Sr,Ca)AlSiN3:Eu), which improves color rendering.

The phosphor section 17 is made of a phosphor that emits fluorescence when excited by blue light emitted from the light-emitting element 13 as excitation light. The fluorescence generated from the phosphor when excited by blue light has a broad green to orange wavelength range spanning 480 to 700 nm, and has a yellow peak wavelength at 520 to 570 nm.

The phosphor section 17 is, for example, a ceramic phosphor plate made of an alumina or glass medium (base material) containing yttrium aluminum garnet (YAG:Ce) phosphor particles with cerium (Ce) as an activator.

The phosphor section 17 is not limited to a phosphor plate containing YAG:Ce phosphor particles. For example, it may be a phosphor plate in which YAG, the base material of the phosphor particles, is the medium. In this case, the phosphor section 17 may be a polycrystalline or single crystalline body.

When the blue light emitted from the light-emitting element 13 enters the phosphor section 17, some of it passes through the phosphor section 17 as is, and some of it excites the phosphor, causing the excited phosphor to emit fluorescence.

Therefore, the excitation light that has passed through the phosphor section 17 without contributing to the generation of fluorescence, and the fluorescence emitted from the phosphor are emitted from the top surface of the phosphor section 17. As a result, white light that is a mixture of blue light and yellow fluorescence is extracted from the top surface of the phosphor section 17. In other words, the top surface of the phosphor section 17 is the light output surface of the light emitting device 100.

In the light emitting device 100, a second dielectric multilayer film 43 in which a plurality of dielectric films are laminated over the side surface of the phosphor section 17 is formed. The second dielectric multilayer film 43 is formed by alternately laminating 48 layers (24 pairs) _{of SiO2} and _Al2O3 , similar to the first dielectric multilayer film 39. The material of the second dielectric multilayer film 43 may be _TiO2 , NbO, MgO, _Ta2O5 , HfO, or _the like.

In the light emitting device 100 of this embodiment, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 are separated from each other by the adhesive member 41. In other words, the adhesive member 41 extends from between the upper surface of the translucent substrate 32 and the lower surface of the phosphor section 17 to between the first dielectric multilayer film 39 and the second dielectric multilayer film 43.

By arranging the adhesive member 41 in this manner, in the light emitting device 100, for example, it is possible to protect the end faces of the first dielectric multilayer film 39 and the second dielectric multilayer film 43.

The phosphor section 17 has submicron to micron-sized irregularities on its underside, which are derived from the particle size of the phosphor section 17. With this configuration, in the light-emitting device 100, the phosphor section 17 is bonded so that the irregularities on its underside come into contact with the upper surface of the light-emitting element 13. In other words, the horizontally guided light of the adhesive member 41 is diffused in the vertical direction by the irregularities on the underside of the phosphor section 17.

As a result, in the light emitting device 100, the light components guided in the width direction of the adhesive member 41 in the figure are reduced, so that leakage light from the end faces of the adhesive member 41 can be suppressed. Even if the bottom surface of the phosphor section 17 is flat, leakage light can be similarly suppressed if the adhesive member 41 contains phosphor particles or light diffusing particles. Furthermore, even if the top surface of the translucent substrate 32 is uneven, leakage light can be suppressed in the same way as when unevenness is provided on the bottom surface of the phosphor section 17.

[Improvement of light output by light reflection of dielectric multilayer film]
Here, the improvement in light output due to light reflection by the first dielectric multilayer film 39 and the second dielectric multilayer film 43 in the light emitting device 100 of this embodiment will be described with reference to FIG.

As described above, in the light emitting device 100 of this embodiment, the first dielectric multilayer film 39 is formed over the side surface of the light emitting element 13 and the area on the bottom surface of the light emitting element 13 excluding the p-electrode 34 and the n-electrode 35, and the second dielectric multilayer film 43 is formed over the side surface of the phosphor section 17.

Therefore, for example, light emitted from the light-emitting element 13 and directed to the side is reflected by the first dielectric multilayer film 39 and is emitted from the upper surface of the light-transmitting substrate 32. Also, for example, fluorescence generated in the phosphor section 17 and directed to the side is reflected by the second dielectric multilayer film 43 and is emitted from the upper surface of the phosphor section 17.

As a result, in the light emitting device 100, it is possible to prevent the light emitted from the light emitting element 13 and the fluorescence generated in the phosphor section 17 from leaking from the side of the light emitting element 13 or the side of the phosphor section 17. Therefore, in the light emitting device 100, most of the light emitted from the light emitting element 13 and the fluorescence generated in the phosphor section 17 can be emitted from the light emitting device 100.

Therefore, according to the light emitting device 100 of this embodiment, the light leaking to the side of the light emitting device 100 is reflected by the first dielectric multilayer film 39 and the second dielectric multilayer film 43, thereby improving the output of light emitted from the light emitting surface of the light emitting device 100.

In addition, in the light emitting device 100 of this embodiment, a first dielectric multilayer film 39 is also formed on the underside of the light emitting element 13, i.e., the area of the semiconductor structure layer 31 excluding the p-electrode 34 and the n-electrode 35. This makes it possible to reflect light leaking from the light emitting element 13 to the submount 11 side.

In particular, when the mounting substrate 21 made of Si is used for the submount 11 as in the light-emitting device 100, that is, when a silicon-based substrate is used, there is a risk that when light leaks from the light-emitting element 13 to the submount 11 side, the light will be absorbed by the mounting substrate 21. Furthermore, when light is absorbed by the mounting substrate 21 in this way, there is a risk that the output of the light emitted from the light-emitting surface of the light-emitting device 100 will decrease.

In the light emitting device 100 of this embodiment, as described above, the first dielectric multilayer film 39 is also formed on the underside of the light emitting element 13, and this makes it possible to prevent the above-mentioned light absorption from occurring by reflecting the light leaking from the light emitting element 13 to the submount 11 side. In addition, the reflection of light by the first dielectric multilayer film 39 makes it possible to improve the output of light emitted from the light emitting surface of the light emitting device 100.

When the light emitted from the light-emitting layer of the light-emitting element 13 reaches the p-electrode 34 and the n-electrode 35, the light is reflected by the p-electrode 34 and the n-electrode 35, thereby improving the output of the light emitted from the light-emitting surface of the light-emitting device 100.

In the light-emitting device 100, even if the upper surface of the light-transmitting substrate 32 of the light-emitting element 13 and the lower surface of the phosphor section 17 are flat and the adhesive member 41 does not contain phosphor or diffusing material, the thickness of the adhesive member 41 can be reduced to about 3 to 5 μm to suppress light leakage from the end face of the adhesive member 41.

Therefore, according to the light emitting device 100 of this embodiment, by providing the first dielectric multilayer film 39 and the second dielectric multilayer film 43, it is possible to suppress leakage of light from the light emitting device 100 and improve the output of light emitted from the light emitting surface of the light emitting device 100.

In addition, in the light emitting device 100 of this embodiment, the light emitting element 13 is mounted on the submount 11, but this is not limited thereto. For example, the light emitting element 13 may be directly mounted on a circuit board provided with wiring and electrodes.

Furthermore, when a ceramic material that reflects 70% or more of light with wavelengths in the visible light band, such as _aluminum nitride (AlN), aluminum oxide ( _Al2O3 ), or zirconium oxide ( _ZrO2 ), is used as the mounting substrate for the light-emitting element 13, it is not necessarily necessary to form the first dielectric multilayer film 39 on the underside of the light-emitting element 13, because the light leaking from the underside of the light-emitting element 13 is reflected by the substrate, i.e., light absorption by the substrate is unlikely to occur.

Furthermore, in the light emitting device 100 of this embodiment, the configurations of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can be set individually. For example, the reflectance of the first dielectric multilayer film 39 for blue band light can be set higher than that of the second dielectric multilayer film 43, and the reflectance of the second dielectric multilayer film 43 for yellow band light can be set higher than that of the first dielectric multilayer film 39. In this way, the band reflectance of each of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can be optimized.

Therefore, according to the light emitting device 100 of this embodiment, by providing the first dielectric multilayer film 39 and the second dielectric multilayer film 43 separately in this manner, it is possible to improve the output of light emitted from the light emitting surface of the light emitting device 100 while suppressing leakage of light from the light emitting device 100.

In addition to the reflectance described above, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can also be changed in terms of material, number of pairs formed, total film thickness, etc. For example, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 may differ only in material and be otherwise the same.

[Method of manufacturing the light emitting device 100]
3 to 6, a method for manufacturing the light emitting device 100 according to this embodiment will be described below. Note that, in the following, a method for forming the first dielectric multilayer film 39 and the second dielectric multilayer film 43 will be mainly described.

FIG. 3 is a perspective view showing the process of forming the first dielectric multilayer film 39 in the light-emitting element 13. FIG. 4 is a top view showing the process of forming the first dielectric multilayer film 39 in the light-emitting element 13. FIG. 5 and FIG. 6 are cross-sectional views taken along line 5-5 in FIG. 4. FIG. 7 is a cross-sectional view showing the process of forming the second dielectric multilayer film 43 in the phosphor section 17.

First, a method for forming the first dielectric multilayer film 39 will be described. First, a dicing sheet is prepared to which a wafer having densely packed light-emitting elements with electrodes already formed thereon is attached, and the wafer is then singulated using a blade dicer or laser dicer (step S1: singulation process).

Next, the dicing sheet after the light emitting elements 13 have been separated is stretched (expanding process) to provide gaps between adjacent light emitting elements 13, making it easier to remove each element from the dicing sheet (step S2: expanding process).

Next, as shown in FIG. 3, good light-emitting elements 13 separated in step S2 are selected using a sorter or the like and transferred to a heat-resistant base sheet 46 made of polyimide (step S3: sorting process). As a result, the p-electrode 34 and n-electrode 35 provided on the light-emitting element 13 are covered with the base sheet 46.

Next, as shown in Figures 4 and 5, a heat-resistant cover sheet 47 made of polyimide and having multiple ventilation holes 47H through which the material gas can pass is attached onto the base sheet 46 so as to be spaced apart from the base sheet 46 and create an internal space (step S4: cover sheet attachment process).

At this time, the cover sheet 47 is arranged so that each of the ventilation holes 47H is located between adjacent light-emitting elements 13. As a result, the upper surface of the light-emitting element 13, i.e., the upper surface of the light-transmitting substrate 32, is covered by the cover sheet 47 as shown in FIG. 5.

Next, as shown in FIG. 5, a first dielectric multilayer film 39 is formed on the light-emitting element 13 to which the base sheet 46 and cover sheet 47 are attached, using atomic layer deposition (ALD) (step S5: dielectric multilayer film formation process).

As a result, as shown in FIG. 6, a first dielectric multilayer film 39 is formed on the side and bottom surfaces of the light-emitting element 13 in areas where the p-electrode 34 and n-electrode 35 are not formed. Finally, the base sheet 46 and cover sheet 47 are peeled off to obtain the light-emitting element 13 with the first dielectric multilayer film 39 formed thereon.

Next, a method for forming the second dielectric multilayer film 43 will be described. The second dielectric multilayer film 43 can be formed in the same manner as the first dielectric multilayer film 39 by carrying out the above-mentioned steps S1 to S5 on the phosphor portion 17.

In other words, the phosphor section 17 is separated into individual pieces, and non-defective pieces are transferred to a base sheet 46 (steps S1 to S3), and a cover sheet 47 is attached, after which a second dielectric multilayer film 43 is formed by atomic layer deposition (steps S4 to S5), resulting in a phosphor section 17 with the second dielectric multilayer film 43 formed on the side surface, as shown in FIG. 7.

After manufacturing the light-emitting element 13 on which the first dielectric multilayer film 39 is formed and the phosphor section 17 on which the second dielectric multilayer film 43 is formed as described above, the upper surface of the light-transmitting substrate 32 of the light-emitting element 13 and the lower surface of the phosphor section 17 are bonded together via an adhesive member 41, and the light-emitting element 13 is mounted on a submount 11, thereby obtaining a light-emitting device 100 as shown in FIG. 2.

In the light emitting device 100 of this embodiment, the light emitting element 13 on which the first dielectric multilayer film 39 is formed and the phosphor section 17 on which the second dielectric multilayer film 43 is formed are each manufactured separately. Therefore, in the manufacturing process of the light emitting device 100, for example, the formation states of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can be checked one by one before bonding the light emitting element 13 and the phosphor section 17 together.

For example, when the light emitting element 13 is mounted on the submount 11 and the phosphor section 17 is bonded thereon before forming the dielectric multilayer film, i.e., when the light emitting device excluding the dielectric multilayer film is manufactured before forming the dielectric multilayer film, even if a film formation defect is found anywhere in the dielectric multilayer film, it can lead to a defect in the entire light emitting device. In other words, the manufacturing yield can be reduced.

On the other hand, according to the light emitting device 100 of this embodiment, the light emitting device 100 can be manufactured by bonding the light emitting element 13 on which the first dielectric multilayer film 39, which is always in a good film formation state, and the phosphor part 17 on which the second dielectric multilayer film 43 is formed, thereby improving the manufacturing yield.

In addition, as described above, if the dielectric multilayer film is formed after all of the light emitting device 100 except for the dielectric multilayer film is manufactured, the dielectric multilayer film may extend to the wiring and electrodes formed on the submount 11, which may cause poor electrical continuity in the wiring and electrodes.

The light emitting device 100 of this embodiment can prevent the above-mentioned electrical continuity failure. By separately manufacturing the light emitting element 13 on which the first dielectric multilayer film 39 is formed and the phosphor section 17 on which the second dielectric multilayer film 43 is formed, and then mounting them on the submount 11, it is possible to prevent such electrical continuity failure from occurring.

Therefore, according to the light emitting device 100 of this embodiment, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can improve the output of light emitted from the light emitting device 100 while improving the manufacturing yield.

[Application examples of the light emitting device 100]
Next, an application example of the light emitting device 100 of the first embodiment will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view of a light emitting module 200. In the light emitting module 200, the light emitting device 100 excluding the submount 11 is shown as a light emitting device 110.

The light-emitting module 200 includes a circuit board 51 and light-emitting devices 110 arranged in a row on the upper surface of the circuit board 51.

The circuit board 51 is a flat board with a rectangular top surface. The circuit board 51 is made of, for example, AlN or glass epoxy. A plurality of element mounting pads 52 are provided on the top surface of the circuit board 51, and a light emitting device 110 is bonded to each of the element mounting pads 52. The element mounting pads 52 are composed of an anode pad 53 and a cathode pad 54.

In the light-emitting module 200, the p-electrode 34 of the light-emitting element 13 of the light-emitting device 110 is joined to the anode pad 53 via solder 56 made of tin (Sn), silver (Ag) and Cu, and the n-electrode 35 of the light-emitting element 13 of the light-emitting device 110 is joined to the cathode pad 54 via solder 56.

In the light-emitting module 200, adjacent light-emitting devices 110 on the circuit board 51 are arranged with a predetermined mounting interval MI between them. For example, the mounting interval MI is 30 μm to 100 μm, and the device interval is narrow. In other words, in the light-emitting module 200, the light-emitting devices 110 are densely mounted on the circuit board 51.

In the light-emitting module 200, as described above, a first dielectric multilayer film 39 is formed on the side and bottom surface of the light-emitting element 13, and a second dielectric multilayer film 43 is formed on the side surface of the phosphor section 17, thereby making it possible to suppress the occurrence of a phenomenon in which light emitted from one of the adjacent light-emitting devices 110 affects light emitted from the other light-emitting device 110, i.e., the occurrence of so-called crosstalk.

In addition, in the light-emitting module 200, since the first dielectric multilayer film 39 and the second dielectric multilayer film 43 are insulators, even if the position of each of the light-emitting devices 110 is shifted due to a decrease in self-alignment caused by the solder 56 when the light-emitting devices 110 are densely mounted on the circuit board 51, it is possible to prevent the light-emitting devices 110 from coming into contact with each other and causing a short circuit.

The light emitting module 200 shown in FIG. 8 can also be manufactured by the following manufacturing method. First, the light emitting element 13 provided with the first dielectric multilayer film 39 as the first device member is mounted on the circuit board 51 via solder. Next, the phosphor part 17 provided with the second dielectric multilayer film 43 as the second device member is adhered to the upper surface of the light emitting element 13 via the adhesive member 41. After that, the light emitting module 200 can also be manufactured by heating the light emitting module 200 to harden the adhesive member 41.

According to this method, the light-emitting element 13 is mounted first on the upper surface of the circuit board 51, so that the self-alignment target of the adhesive member 41 is only the light-emitting element 13, reducing the weight during self-alignment, improving self-alignment properties, and enabling the light-emitting element 13 to be mounted at high density without any disturbance. Therefore, according to this method, the light-emitting device 110 formed by adhering the phosphor portion 17 to the upper surface of the light-emitting element 13 can be formed into a light-emitting module 200 in which the light-emitting device 110 is mounted at high density without any disturbance.

Next, the light emitting device 120 according to the second embodiment will be described with reference to FIG. 9. FIG. 9 is a cross-sectional view of the light emitting device 120. Note that the submount 11 shown in the first embodiment is omitted in the light emitting device 120. The light emitting device 120 of the second embodiment is similar to the first embodiment in other respects, except for the configuration of the phosphor section 61.

In the light emitting device 120 of this embodiment, the phosphor section 61 is configured to be larger in size in top view than the light emitting element 13. Specifically, the phosphor section 61 is larger laterally from the outer edge of the upper surface of the light emitting element 13 by a width W _e . Therefore, the phosphor section 61 can more easily take in the light emitted from the light emitting element 13.

Accordingly, the adhesive member 63 bonds the first dielectric multilayer film 39 and the second dielectric multilayer film 43 so that the side surface is inclined. In this case, the inclination angle of the side surface of the adhesive member 63 with respect to the center line CL is indicated as angle θ.

For example, if the angle θ is 45°, when the light emitted from the light-emitting element 13 and guided through the adhesive member 63 in the width direction in the figure reaches the side of the adhesive member 63, the light is reflected by the side of the adhesive member 63 and travels toward the center of the upper surface of the phosphor section 17.

Here, when the thickness of the adhesive member 63 is _Ta , the protruding width W _e of the phosphor portion 61 described above can be calculated by the following formula.

　　　　　　　　　　　　　　　　　 

　　　　　　　　　　　　　　　　　 

For example, when the angle θ is 45° and the thickness T _a is 5 μm, the width W _e is 5 μm. That is, in the light emitting device 120 of this embodiment, by making the size of the phosphor section 61 in the top view 5 μm larger than the outer edge of the top surface of the light emitting element 13, it is possible to emit light that is reflected by the side surface of the adhesive member 63 and proceeds to the top surface of the phosphor section 17.

Therefore, according to the light emitting device 120 of this embodiment, the provision of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can suppress leakage of light from the light emitting device 120, and the output of light emitted from the light emitting surface of the light emitting device 120 can be further improved compared to the light emitting device 100 of Example 1.

Next, a light-emitting device 130 according to Example 3 will be described with reference to FIG. 10. FIG. 10 is a cross-sectional view of the light-emitting device 130. The light-emitting device 130 differs from the light-emitting device 100 of Example 1 in that it has a first reflective film 65 and a second reflective film 67 as metal reflective films, but is otherwise similar to the light-emitting device 100.

The first reflective film 65 is a thin film formed on the surface of the first dielectric multilayer film 39 and covering the entire side surface of the light-emitting element 13. The first reflective film 65 is made of a metal that is reflective to blue light and yellow fluorescent light. In the light-emitting device 130 of this embodiment, the first reflective film 65 is made of Ag.

The second reflective film 67 is a thin film formed on the surface of the second dielectric multilayer film 43 and covering the entire side surface of the phosphor section 17. The second reflective film 67 is made of a metal that is reflective to blue light and yellow fluorescent light. In the light emitting device 130 of this embodiment, the second reflective film 67 is made of Ag, just like the first reflective film 65.

In the light-emitting device 130 of this embodiment, the first reflective film 65 is formed to cover the entire side surface of the light-emitting element 13, so that, for example, light traveling through the translucent substrate 32 of the light-emitting element 13 can be prevented from passing through the first dielectric multilayer film 39 from the side surface of the translucent substrate 32 and leaking out of the light-emitting device 130.

In addition, according to the light emitting device 130 of this embodiment, the second reflective film 67 is formed to cover the entire side surface of the phosphor section 17, so that, for example, light traveling inside the phosphor section 17 can be prevented from passing through the second dielectric multilayer film 43 from the side surface of the phosphor section 17 and leaking out of the light emitting device 130.

Therefore, according to the light emitting device 130 of this embodiment, the first reflective film 65 and the second reflective film 67 are reflective to blue light and yellow fluorescent light, and therefore, for example, light directed from the side of the light emitting element 13 or the phosphor section 17 toward the outside of the light emitting device 130 can be reflected. As a result, for example, when the reflected light is emitted from the top surface of the phosphor section 17, an improvement in the luminous flux of the emitted light from the light emitting device 130 can be expected.

In addition, the light emitting device 130 of this embodiment can suppress light leaking outside the light emitting device 130, so that when light is viewed from the entire light emitting module in which multiple light emitting devices 130 are densely mounted on a circuit board, the contrast ratio between the brightness of the light emitted from each light emitting device 130 and the brightness of the area between adjacent light emitting devices 130 can be made more prominent.

In the light-emitting device 130 of this embodiment, the first reflective film 65 and the second reflective film 67 are made of Ag, but are not limited to this and may be made of any metal that is reflective to blue light and yellow fluorescent light.

For example, ruthenium (Ru), rhodium (Rh), palladium (Pd), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), titanium (Ti), aluminum (Al), etc. may be used as the material for the first reflective film 65 and the second reflective film 67. Note that the first reflective film 65 and the second reflective film 67 may be made of different metals, or each may be made of multiple metals.

In the light emitting device 130 of this embodiment, it is preferable that the first dielectric multilayer film 39 and the second dielectric multilayer film 43 have a dielectric film whose outermost layer is made of _TiO2 , from the viewpoint of adhesion to the first reflective film 65 and the second reflective film 67.

[First manufacturing method of light emitting device 130]
Here, a first manufacturing method of the light emitting device 130 in this embodiment will be described with reference to Fig. 11 and Fig. 12. Fig. 11 is a cross-sectional view showing a process of forming a first reflective film 65. Fig. 12 is a cross-sectional view showing a process of forming a second reflective film 67. The first manufacturing method is similar to the manufacturing method of the light emitting device 100 in Example 1, except for the process of forming the first reflective film 65 and the second reflective film 67.

First, the process of forming the first reflective film 65 will be described. As shown in FIG. 11, the first reflective film 65 is formed by forming the first dielectric multilayer film 39 in the regions of the side and bottom surfaces of the light emitting element 13 where the p-electrode 34 and n-electrode 35 are not formed in step S5 (dielectric multilayer film formation process) of the manufacturing method of the light emitting device 100, and then depositing a metal film made of Ag by ALD on the region of the first dielectric multilayer film 39 that covers the side surface of the light emitting element 13.

Then, the base sheet 46 covering the lower surface of the light-emitting element 13 and the cover sheet 47 covering the upper surface of the light-emitting element 13 are peeled off to obtain the light-emitting element 13 on which the first dielectric multilayer film 39 and the first reflective film 65 are formed.

Here, in the process of forming the first dielectric multilayer film 39, it is preferable to form the first dielectric multilayer film 39 so that its thickness is thicker than the thicknesses of the p-electrode 34 and the n-electrode 35. In this case, the first dielectric multilayer film 39 completely fills the space between the p-electrode 34 and the n-electrode 35 and the base sheet 46. In other words, there is no room to form the first reflective film 65 in that space.

This makes it possible to prevent the first reflective film 65 from being formed in the space between the p-electrode 34 and the n-electrode 35 and the base sheet 46 during the process of forming the first reflective film 65. In other words, it is possible to prevent the p-electrode 34 and the n-electrode 35 from being short-circuited by the first reflective film 65 being formed in that space.

Next, the process of forming the second reflective film 67 will be described. As shown in FIG. 12, the second reflective film 67 is formed by forming the second dielectric multilayer film 43 on the side surface of the phosphor section 17, and then depositing a metal film made of Ag on the second dielectric multilayer film 43 by ALD.

Then, the base sheet 46 covering the lower surface of the phosphor part 17 and the cover sheet 47 covering the upper surface of the phosphor part 17 are peeled off to obtain the phosphor part 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed.

Finally, the light emitting element 13 on which the first dielectric multilayer film 39 and the first reflective film 65 are formed is bonded to the phosphor section 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed using the adhesive member 41, thereby obtaining the light emitting device 130.

[Second manufacturing method of light emitting device 130]
Next, a second manufacturing method for the light emitting device 130 in this embodiment will be described with reference to Figures 13 to 17. Each of Figures 13 to 17 is a cross-sectional view showing an example of a manufacturing process for the light emitting device 130 in the second manufacturing method.

First, as shown in FIG. 13, the light emitting element 13 is fixed to the base sheet 46 so that the surface on which the p-electrode 34 and the n-electrode 35 of the light emitting element 13 are formed faces up. After that, a multilayer film 39M that will become the first dielectric multilayer film 39 is formed on the side and bottom surface of the light emitting element 13 by ALD.

At this time, the p-electrode 34 and the n-electrode 35 are also covered with the multilayer film 39M. In addition, the area of the upper surface of the base sheet 46 where the light-emitting element 13 is not disposed is also covered with the multilayer film 39M.

Next, as shown in FIG. 14, the multilayer film 39M formed on the light-emitting element 13 is removed by polishing or the like until the surfaces of the p-electrode 34 and n-electrode 35 are exposed. Thereafter, as shown in FIG. 15, the light-emitting element 13 is peeled off from the base sheet 46, and the light-emitting element 13 is fixed to the base sheet 46 so that the bottom surface of the light-emitting element 13 faces down. At this time, the multilayer film 39M formed directly on the top surface of the base sheet 46 is removed. After the light-emitting element 13 is peeled off from the base sheet 46, the light-emitting element 13 may be fixed onto a base sheet prepared separately from the base sheet 46 used for film formation.

Next, as shown in FIG. 16, a reflective film 65M that will become the first reflective film 65 is formed by ALD over the surface of the first dielectric multilayer film 39 formed on the top surface of the light-emitting element 13 and the side surface of the light-emitting element 13.

Next, as shown in FIG. 17, the reflective film 65M formed on the upper surface of the light-emitting element 13 is removed by CMP polishing or the like. As a result, a first reflective film 65 is formed on the surface of the first dielectric multilayer film 39 so as to cover the side surface of the light-emitting element 13.

When removing the reflective film 65M, a removal method such as wet blasting may be used to prevent the first reflective film 65 formed on the side surface of the light-emitting element 13 from peeling off as much as possible.

The method for forming the second reflective film 67 is the same as in the first manufacturing method. After forming the phosphor section 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed, the light emitting element 13 on which the first dielectric multilayer film 39 and the first reflective film 65 are formed and the phosphor section 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed are bonded using the adhesive member 41 to obtain the light emitting device 130.

In the first and second manufacturing methods of the light emitting device 130, the first dielectric multilayer film 39, the second dielectric multilayer film 43, the first reflective film 65, and the second reflective film 67 are formed by appropriately changing the precursor, which is the raw material that is fed into the ALD device to grow a thin film.

Specifically, for example, when the first dielectric multilayer film 39 is formed by alternately laminating _SiO2 and _{Al2O3 ,} bisethylmethylaminosilane (BEAMS) is used as a precursor for forming the _SiO2 layer, and _titanium chloride ( _TiCl4 ) is used for forming the _Al2O3 layer. When the first dielectric multilayer film 39 is formed of a _TiO2 layer, trimethylaluminum (TMA) is used as a precursor.

For example, when the first reflective film 65 and the second reflective film 67 are made of Ag, (hexafluoroacetylacetonato)(1,5-cyclooctadiene)silver(I) (i.e., hfacAg ^I COD) is used as a precursor. For example, when the first reflective film 65 and the second reflective film 67 are made of Pt, trimethylmethylcyclopentadienylplatinum (MeCpPtMe ₃ ) is used as a precursor.

The carrier gas (inert gas) introduced into the ALD apparatus when forming the first dielectric multilayer film 39, the second dielectric multilayer film 43, the first reflective film 65, and the second reflective film 67 is the same for all of them, i.e., argon (Ar) and nitrogen ( _N2 ).

[verification]
Here, the verification performed when examining the configuration of the light emitting device 130 of this embodiment and the results thereof will be described with reference to Fig. 18. Fig. 18 is a graph showing the simulation results of the reflectance for light of various wavelengths in an embodiment sample simulating the configuration of the light emitting device 130 and a comparative sample as a comparative example.

In this simulation, the example sample used was a translucent light-transmitting member with a dielectric multilayer film consisting of 47 pairs formed on the side surface and a reflective film consisting of 100 nm Ag formed on the surface. The comparison sample used was a translucent light-transmitting member with only a dielectric multilayer film consisting of 47 pairs formed on it.

In the simulations of each of the examples and comparative examples, the dielectric multilayer films were formed under the conditions that the Al ₂ O ₃ of each layer was in the range of 30 to 105 nm, the TiO ₂ was in the range of 30 to 75 nm, and the thickness of each laminate was appropriately set so that the total thickness after forming 47 pairs was 3.7 μm. In the simulations of each of the examples and comparative examples, the dielectric multilayer films were all formed under the same conditions.

In the graph of Figure 18, among the example samples, samples in which light was applied perpendicularly to the dielectric multilayer film and the reflective film, i.e. samples with an incident angle of 0°, are shown by solid lines, and samples with an incident angle of 80° are shown by dashed lines. Among the comparison samples, samples in which light was applied perpendicularly to the dielectric multilayer film, i.e. samples with an incident angle of 0°, are shown by dashed lines, and samples with an incident angle of 80° are shown by dotted lines.

The graph in Figure 18 shows that for the comparison sample, the reflectance for light in the blue light wavelength range (e.g., 430-490 nm) and yellow fluorescent light wavelength range (e.g., 550-590 nm) varied from about 60% to 90% under all angle conditions.

In contrast, in the example sample, the reflectance for light in the blue light wavelength range and the yellow fluorescent light wavelength range is nearly 100% under all angle conditions. In other words, it can be seen that most of the light is reflected by the reflective film.

By forming a reflective film on the surface of the dielectric multilayer film, the reflectance of blue light and yellow fluorescent light can be improved compared to when no reflective film is provided. Therefore, as in the light-emitting device 130 of this embodiment, by forming a first reflective film 65 and a second reflective film 67 on the surfaces of the first dielectric multilayer film 39 and the second dielectric multilayer film 43, respectively, it is possible to prevent light from leaking from the sides of the light-emitting device 130.

In the light emitting device 130 of this embodiment, at least one of the first reflective film 65 and the second reflective film 67 may be formed. In particular, the above simulation results show that in the comparative sample in which no reflective film is provided, the reflectance of yellow fluorescent light tends to be lower than the reflectance of blue light, so it is preferable to provide at least the second reflective film 67.

[Application examples of the light emitting device 130]
Next, an application example of the light emitting device 130 of the third embodiment will be described with reference to Fig. 19. Fig. 19 is a cross-sectional view of a light emitting module 210. In the light emitting module 210, the light emitting device 130 excluding the submount 11 is shown as a light emitting device 140.

Like light-emitting module 200, which is an application example of light-emitting device 100, light-emitting module 210 is configured to include a flat circuit board 51 and a plurality of light-emitting devices 140 arranged in a row on the upper surface of circuit board 51.

In addition, in the light-emitting module 210, a light-reflecting member 69 is formed on the upper surface of the circuit board 51 so as to completely fill the space between each of the multiple light-emitting devices 140. The light-reflecting member 69 is arranged in this manner to cover the side surfaces of each of the light-emitting devices 140.

The light reflecting member 69 is made of a material having light reflectivity. In the light emitting module 210 of this application example, the light reflecting member 69 is made of, for example, a silicone resin containing _TiO2 particles.

In the light-emitting module 210 of this application example, the side surfaces of each of the multiple light-emitting devices 140 are covered with a light-reflecting member 69 having light reflectivity, so that, for example, light leaking from the underside of the light-emitting element 13 through the first dielectric multilayer film 39 and light leaking from between the first reflection film 65 and the second reflection film 67 can be reflected. In other words, compared to the light-emitting module 200, light leakage from each of the light-emitting devices 140 can be suppressed more effectively.

Furthermore, according to the light emitting module 210 of this application example, as with the light emitting module 200, it is possible to suppress the occurrence of a phenomenon in which light emitted from one of the adjacent light emitting devices 140 affects light emitted from the other light emitting device 140, i.e., the occurrence of so-called crosstalk.

In addition, the light-reflecting member 69 may not be formed in the light-emitting module 210 of this application example. In other words, similar to the application example of the light-emitting device 100, the light-emitting device 140 may simply be arranged on the upper surface of the circuit board 51.

REFERENCE SIGNS LIST 11 Submount 13 Light emitting element 17, 61 Phosphor portion 21 Mounting base material 22 Insulating film 24, 53 Anode pad 25, 54 Cathode pad 27 Anode mounting electrode 28 Cathode mounting electrode 31 Semiconductor structure layer 32 Light-transmitting substrate 34 P-electrode 35 N-electrode 39 First dielectric multilayer film 41, 63 Adhesive member 43 Second dielectric multilayer film 46 Base sheet 47 Cover sheet 51 Circuit board 65 First reflective film 67 Second reflective film 69 Light reflective member 100, 110, 120, 130, 140 Light emitting device 200 Light emitting module

Claims (14)

A light emitting element including a light emitting layer that emits light;
a first dielectric multilayer film formed over a side surface of the light emitting element;
a flat phosphor portion disposed on the light emitting element and including a phosphor that is excited by light emitted from the light emitting layer to emit fluorescence;
a second dielectric multilayer film formed over a side surface of the phosphor portion;
Equipped with
A light emitting device, characterized in that the first dielectric multilayer film and the second dielectric multilayer film are both reflective to light emitted from the light emitting layer and fluorescent light emitted from the phosphor portion. The light-emitting device according to claim 1, characterized in that the first dielectric multilayer film and the second dielectric multilayer film are spaced apart from each other. The light-emitting device according to claim 1, characterized in that the first dielectric multilayer film and the second dielectric multilayer film differ in at least one of the reflectance for light of a specific wavelength, the material, the number of groups, and the total film thickness. a light-transmitting adhesive member that adheres an upper surface of the light-emitting element and a lower surface of the phosphor portion;
3. The light emitting device according to claim 2, wherein the first dielectric multilayer film and the second dielectric multilayer film are spaced apart from each other with the adhesive member sandwiched therebetween. The light emitting element has a pair of element electrodes formed on a lower surface,
3. The light emitting device according to claim 1, wherein the first dielectric multilayer film is formed over an area of the lower surface of the light emitting element excluding the pair of element electrodes. The light-emitting device according to claim 4, characterized in that the light-emitting element is mounted on a substrate made of silicon. The light-emitting device according to claim 1 or 2, characterized in that the lower surface of the phosphor section is larger in size in top view than the upper surface of the light-emitting element. a light emitting device comprising: a light emitting element including a light emitting layer that emits light; a first dielectric multilayer film formed over a side surface of the light emitting element; a flat phosphor section disposed on the light emitting element and including a phosphor that is excited by light emitted from the light emitting layer to emit fluorescence; and a second dielectric multilayer film formed over a side surface of the phosphor section, the first dielectric multilayer film and the second dielectric multilayer film both having reflectivity with respect to the light emitted from the light emitting layer and the fluorescence emitted from the phosphor section;
A circuit board,
The light-emitting module is characterized in that a plurality of the light-emitting devices are arranged at predetermined intervals on the surface of the circuit board. a first dielectric multilayer film forming step of forming a first dielectric multilayer film over a side surface of a light emitting element including a light emitting layer that emits light;
a second dielectric multilayer film forming step of forming a second dielectric multilayer film over a side surface of a flat phosphor portion including a phosphor that is excited by light emitted from the light emitting layer to emit fluorescence;
and a bonding step of bonding an upper surface of the light emitting element on which the first dielectric multilayer film is formed and a lower surface of the phosphor section on which the second dielectric multilayer film is formed, using an adhesive member;
A method for manufacturing a light emitting device, characterized in that the first dielectric multilayer film and the second dielectric multilayer film are both reflective to light emitted from the light emitting layer and fluorescence emitted from the phosphor portion. a first dielectric multilayer film forming step of forming a first dielectric multilayer film over a side surface of a light emitting element including a light emitting layer that emits light;
a second dielectric multilayer film forming step of forming a second dielectric multilayer film over a side surface of a flat phosphor portion including a phosphor that is excited by light emitted from the light emitting layer to emit fluorescence;
an arrangement step of arranging a plurality of first device members, each having the first dielectric multilayer film formed over a side surface of the light emitting element, at a predetermined interval on one main surface of a flat circuit board;
a bonding step of bonding a second device member, the second device member having the second dielectric multilayer film formed over a side surface of the phosphor portion, to an upper surface of the first device member via an adhesive member;
A method for manufacturing a light-emitting module, characterized in that the first dielectric multilayer film and the second dielectric multilayer film are both reflective to light emitted from the light-emitting layer and fluorescence emitted from the phosphor portion. The light-emitting device according to claim 1 or 2, characterized in that a light-reflective metal reflective film is formed on at least one surface of the first dielectric multilayer film or the second dielectric multilayer film. The light-emitting device according to claim 11, characterized in that the metal reflective film is made of Ag. The light-emitting module according to claim 8, characterized in that a light-reflecting member having a light-reflecting property is formed on the surface of the circuit board so as to fill the gaps between adjacent light-emitting devices. a first metal reflective film forming step of forming a first metal reflective film having light reflectivity on a surface of the first dielectric multilayer film;
a second metal reflective film forming step of forming a second metal reflective film having light reflectivity on a surface of the second dielectric multilayer film;
The method for manufacturing a light emitting device according to claim 9, further comprising:

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