WO2025053592A1 - Substrate processing apparatus and method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and method and, specifically, to a substrate processing apparatus and method, which can prevent deposited material of iodine ingredients from being formed on the inner wall of a process chamber. The substrate processing apparatus according to an embodiment of the present invention comprises: a process chamber that provides a process processing space for a process for a substrate; and a control unit that controls the process for a substrate, wherein the control unit controls a surface treatment process to be performed on the inner space of the process chamber before performing a thin-film deposition process on the substrate, a process material used in the thin-film deposition process includes iodine, and the surface treatment process includes a process for controlling the nitrogen concentration in the surface area of the process chamber.

Description

Substrate processing device and method

The present invention relates to a substrate processing device and method, and more particularly, to a substrate processing device and method that prevents deposition of an iodine component from being formed on the inner wall of a process chamber.

Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a source gas causes a chemical reaction on the surface of the substrate to form a thin film. In particular, in the case of atomic layer deposition, since one layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

To extend the range of process temperatures, plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) can be used. Since plasma enhanced chemical vapor deposition and plasma enhanced atomic layer deposition can be processed at lower temperatures than chemical vapor deposition and atomic layer deposition, the properties of the thin film can be improved.

The process gas for depositing a thin film on a substrate may include a source gas and a reaction gas. A thin film may be deposited on the substrate by injecting the reaction gas after the source gas is injected onto the substrate.

A precursor containing iodine may be used for the deposition of a silicon nitride thin film. Meanwhile, if a precursor containing iodine is used and the thin film deposition process is performed, iodine may attach to the inner wall of the process chamber to form a deposit. This deposit may act as a particle in the subsequent thin film deposition process and deteriorate the quality of the thin film.

Therefore, there is a need for an invention that prevents iodine-containing deposits from being formed on the inner wall of a process chamber even when a thin film deposition process is performed using a precursor containing iodine.

The problem to be solved by the present invention is to provide a substrate processing device and method that prevents deposition of an iodine component from being formed on the inner wall of a process chamber.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing device according to an embodiment of the present invention includes a process chamber that provides a process processing space for a process on a substrate, and a control unit that controls the process on the substrate, wherein the control unit causes a surface treatment process to be performed on an internal space of the process chamber before a thin film deposition process on the substrate is performed, a process material used in the thin film deposition process includes iodine, and the surface treatment process includes a process of controlling a nitrogen concentration in a surface area of the process chamber.

The surface area of the process chamber where the surface treatment process is completed includes first to third surface areas sequentially formed in a direction in which the depth of the surface of the process chamber decreases.

As the depth of the surface of the process chamber decreases, the nitrogen concentration in each of the first surface area and the second surface area increases.

As the depth of the surface of the above process chamber progresses toward decreasing, the nitrogen concentration in the third surface area decreases.

A substrate treatment method according to an embodiment of the present invention includes a step of performing a surface treatment process on a substrate, and a step of performing a thin film deposition process on the substrate on which the surface treatment process has been completed, wherein a process material used in the thin film deposition process includes iodine, and the surface treatment process includes a process of controlling a nitrogen concentration in a surface area of a process chamber that provides a process treatment space for the process on the substrate.

The above surface treatment process includes a first surface treatment process in which a first surface treatment gas is sprayed onto the substrate, a second surface treatment process in which a second surface treatment gas is sprayed onto the substrate, and a third surface treatment process in which a third surface treatment gas is sprayed onto the substrate.

The first surface treatment gas includes a first gas and a second gas, the second surface treatment gas includes the first gas and a third gas, and the third surface treatment gas includes the first gas.

The above first surface treatment process includes a process of converting the first surface treatment gas into a plasma state with a first RF power,

The second surface treatment process includes a process of converting the second surface treatment gas into a plasma state with a second RF power, and the third surface treatment process includes a process of converting the third surface treatment gas into a plasma state with a third RF power, wherein among the first to third RF powers, the second RF power is formed to be the largest.

The first surface treatment process is performed for a first time, the second surface treatment process is performed for a second time, the third surface treatment process is performed for a third time, and the second time is formed to be longer than the first time and the third time.

The above surface treatment process includes a process of preventing bonding between the process material and the surface of a surface treatment target existing in the internal space of the process chamber.

Specific details of other embodiments are included in the detailed description and drawings.

According to the substrate processing device and method according to the embodiment of the present invention as described above, there is an advantage in that iodine is prevented from being attached to the inner wall of the process chamber during the thin film deposition process by forming a nitrogen layer on the inner wall of the process chamber before the thin film deposition process using a precursor containing iodine is performed.

Figure 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

Figure 2 is a drawing showing that the substrate support has moved into the process processing space.

Figure 3 is a drawing showing that a deposit has been formed in the internal space of a process chamber.

Figure 4 is a graph showing the components included in the thin film.

Figure 5 is a drawing showing that a surface treatment process is performed in the internal space of a process chamber.

Figure 6 is a drawing to explain the difference in electronegativity between the inner wall of the process chamber and iodine.

Figure 7 is a diagram to explain the electronegativity difference between the surface area and iodine.

Figure 8 is a drawing for explaining the process cycle.

Figure 9 is a drawing for explaining the surface treatment process.

Figure 10 is a drawing showing the surface area.

Figure 11 is a graph showing the nitrogen concentration of the surface area shown in Figure 10.

Figure 12 is a table showing the process conditions of the surface treatment process.

Figure 13 is a flow chart showing a substrate processing method according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become apparent with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the present embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with a meaning that can be commonly understood by a person of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries shall not be ideally or excessively interpreted unless explicitly specifically defined.

FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, FIG. 2 is a drawing showing that a substrate support part has moved into a process processing space, FIG. 3 is a drawing showing that a deposit has been formed in the internal space of a process chamber, and FIG. 4 is a graph showing components included in a thin film.

Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevator unit (300), a gas supply unit (400), a gas injection unit (500), a power supply unit (600), and a control unit (700).

The substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). Specifically, the substrate processing device (10) can deposit a thin film on the substrate (W) using a plasma enhanced chemical vapor deposition (PECVD) method or a plasma enhanced atomic layer deposition (PEALD) method. Alternatively, the substrate processing device (10) can deposit a thin film on the substrate (W) using a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) may provide a space for receiving various components for processing a substrate (W). The chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a gas injection unit (500). The gas injection unit (500) may be fixed to a lower surface of the chamber lid (120).

The process chamber (100) can provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for a process on a substrate (W), and the substrate placement space (SP2) represents a space for placement and movement of the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) can be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), an upper space can correspond to the process processing space (SP1), and a lower space can correspond to the substrate placement space (SP2).

A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, a substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be brought into or taken out of the process chamber (100) through the substrate entrance (130).

The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be brought in or taken out through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the inside of the process chamber (100) from the outside.

The substrate support (200) can provide a mounting surface on which the substrate (W) can be mounted. A process can be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) can heat the substrate (W). To this end, a heater (not shown) can be provided inside the substrate support (200). Heat emitted from the heater can be transferred to the substrate (W) through the body of the substrate support (200). The heater can serve as an electrode for forming an electric field. As described below, when RF power is supplied to the showerhead (520), an electric field can be formed between the showerhead (520) and the heater.

The substrate support member (200) can be raised to a process processing space (SP1) where a process for a substrate (W) is performed, or lowered to a substrate placement space (SP2) where placement and movement of the substrate (W) are performed. The elevating member (300) can generate a driving force to move the substrate support member (200) in an up-and-down direction. FIG. 1 illustrates that the substrate support member (200) is lowered to the substrate placement space (SP2), and FIG. 2 illustrates that the substrate support member (200) is raised to the process processing space (SP1).

The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the gas injection unit (500) provided in the process chamber (100). A gas transfer line (410) can be connected to the gas supply unit (400). A plurality of gas transfer lines (410) can be provided, and the plurality of gas transfer lines (410) can provide transfer paths for different process gases.

The gas injection unit (500) performs the role of injecting process gas to the substrate (W). The gas injection unit (500) is configured to include a diffusion unit (510) and a showerhead (520). The diffusion unit (510) performs the role of providing a diffusion space (530) for the process gas supplied to the process chamber (100). When the diffusion unit (510) and the showerhead (520) are combined, a diffusion space (530) can be formed between the diffusion unit (510) and the showerhead (520). In addition, the diffusion unit (510) can diffuse the process gas supplied from the gas supply unit (400) and supply it to the diffusion space (530). For example, the diffusion unit (510) can supply the process gas to a plurality of different points in the diffusion space (530).

The showerhead (520) is coupled to the diffusion unit (510) and serves to inject the process gas diffused in the diffusion space (530). The showerhead (520) can inject the process gas with a uniform distribution over the entire surface area of the substrate (W). In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, and a reaction purge gas. The source gas, the source purge gas, the reaction gas, and the reaction purge gas may be sequentially injected from the showerhead (520), or at least some of them may be injected simultaneously. The source gas and the reaction gas may collide with each other and react after being injected from the showerhead (520). Then, the source gas activated by the reaction gas may come into contact with the substrate (W) to perform a process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W).

The showerhead (520) may be provided with a plurality of injection holes (540) for injecting process gas. The plurality of injection holes (540) may be distributed over a certain range of the showerhead (520).

The power supply unit (600) can supply RF power for generating plasma to the process chamber (100). Specifically, the power supply unit (600) can supply RF power to the showerhead (520). The showerhead (520) may have a separate electrode plate (not shown) that receives RF power, or may serve as an electrode that receives RF power on its own. As described above, the substrate support unit (200) may include a heater that serves as an electrode. When RF power is supplied to the showerhead (520), an electric field may be formed between the showerhead (520) and the heater of the substrate support unit (200). The process gas introduced into the process chamber (100) is converted into particles in a plasma state by the electric field formed by the supply of RF power, and the plasma particles react with the surface of the substrate (W) so that process processing can be performed on the substrate (W).

The process chamber (100) may be equipped with an exhaust port (150). The exhaust port (150) may be arranged on the inner lower surface of the chamber body (110). For example, the exhaust port (150) may be arranged in an area vertically overlapping the substrate support member (200) to effectively discharge process byproducts. Meanwhile, it is exemplary that the exhaust port (150) is arranged on the inner lower surface of the chamber body (110), and according to some embodiments of the present invention, the exhaust port (150) may be arranged on the inner side surface of the chamber body (110). For example, when the substrate support member (200) is raised to the process processing space (SP1), the exhaust port (150) may be arranged in an area between the substrate support member (200) and the gas injection member (500). Hereinafter, the case where the exhaust port (150) is arranged on the inner lower surface of the chamber body (110) will be mainly described.

The exhaust port (150) may provide an exhaust path for process byproducts. Here, the process byproducts may include all substances that must be exhausted from the process chamber (100), such as remaining gases that are not used for forming a thin film among the process gases supplied to the process chamber (100). For example, the process byproducts may include source gas, reaction gas, source purge gas, and reaction purge gas.

An exhaust line (160) may be connected to the exhaust port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the exhaust port (150). An exhaust pump (170) may be provided in the exhaust line (160). The exhaust pump (170) may pressurize the internal space of the exhaust line (160) so that process byproducts introduced into the exhaust port (150) may be transported through the exhaust line (160). The process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

The control unit (700) can perform overall control of the substrate processing device (10). For example, the control unit (700) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (700) can control the supply of RF power by the power supply unit (600) or the supply of process gas to the process chamber (100).

In addition, the control unit (700) can control the process for the substrate (W). Specifically, the control unit (700) can cause the surface treatment process for the internal space of the process chamber (100) to be performed before the thin film deposition process for the substrate (W) is performed. In the present invention, the surface treatment process can include a process for preventing bonding between a process material used for thin film deposition and a surface of a surface treatment target existing in the internal space of the process chamber (100). For example, the surface treatment process can include a process for controlling the nitrogen concentration in the surface area of the process chamber (100).

In the present invention, the source gas may be generated using a precursor containing iodine. For example, the precursor may be SiH ₂ I ₂ .

When a thin film deposition process is performed using a source gas containing iodine, a deposit (800) may be formed in the internal space of the process chamber (100), as illustrated in FIG. 3. The component of the deposit (800) may include iodine. A plurality of process cycles may be repeated for deposition of the thin film, and as the process cycles are repeated, the amount of the deposit (800) formed in the internal space of the process chamber (100) may increase. The iodine component of the deposit (800) may deteriorate the quality of the thin film. Therefore, it is desirable to prevent the formation of the deposit (800) of the iodine component in the internal space of the process chamber (100).

FIG. 4 is data according to X-ray photoelectron spectroscopy (XPS) that shows the types of elements and the concentration of atoms included in a thin film, where the horizontal axis represents the etching time of the thin film and the vertical axis represents the concentration of atoms. Here, the etching time of the thin film can be understood as corresponding to the depth of the thin film. For example, 0 seconds (0s) means information about the surface of the thin film (900), and a specific etching time means information about the types of elements and the concentration of atoms at the corresponding time depth according to the etching rate.

Referring to FIG. 4, it can be confirmed that even if a source gas containing iodine is used to deposit a thin film on a substrate (W), the amount of iodine contained in the thin film is not large. The iodine contained in the source gas does not remain in the thin film but is only combined in the internal space of the process chamber (100). Through this, it can be determined that the iodine component deposit (800) formed in the internal space of the process chamber (100) is formed because the bonding force between the internal space of the process chamber (100) and iodine is relatively large.

The control unit (700) can cause a surface treatment process to be performed to reduce the bonding force between the internal space of the process chamber (100) and iodine before the thin film deposition process is performed. By performing the surface treatment process, the formation of a deposit (800) of an iodine component in the internal space of the process chamber (100) can be prevented.

Figure 5 is a drawing showing that a surface treatment process is performed in the internal space of a process chamber.

Referring to Fig. 5, a surface treatment process can be performed on the internal space of the process chamber.

The interior of the process chamber (100) may include various components. For example, the interior of the process chamber (100) may include a substrate support (200) and a gas injection unit (500). The surface treatment process may be performed on at least one of the inner wall of the process chamber (100), the substrate support (200), the gas injection unit (500), and the substrate (W). The surface area (900) of a surface treatment target, such as the inner wall of the process chamber (100), the substrate support (200), the gas injection unit (500), and the substrate (W), may be transformed by the surface treatment process.

The surface area (900) where the surface treatment process is completed may have a relatively high nitrogen concentration. As the nitrogen concentration of the surface area (900) is formed high, bonding between the process material and the surface area (900) may be prevented. For example, since the surface treatment process is performed before the thin film deposition process is performed, even if the thin film deposition process is performed, the process material may be prevented from being attached to the surface area (900). Here, the process material used in the thin film deposition process may include iodine.

The surface area (900) of the surface treatment target may include a component having a weaker bonding force with the process material than other parts of the surface treatment target. Specifically, the difference in electronegativity between the process material and the surface area (900) may be formed to be smaller than the difference in electronegativity between the process material and other parts. The greater the difference in electronegativity between different materials, the greater the bonding force of the corresponding materials. Since the surface area (900) is formed with a component having a low electronegativity difference with respect to the process material, the process material is prevented from being bonded to the surface area (900), and the process material can be easily discharged from the process chamber (100).

Figure 6 is a drawing for explaining the electronegativity difference between the inner wall of the process chamber and iodine, and Figure 7 is a drawing for explaining the electronegativity difference between the surface area and iodine.

Referring to FIGS. 6 and 7, the electronegativity difference between the surface area (900) and iodine (I) can be formed smaller than the electronegativity difference between the inner wall of the process chamber (100) and iodine (I).

The inner wall of the process chamber (100) may be composed of a material of aluminum oxide. That is, the inner wall of the process chamber (100) may include aluminum (Al) and oxygen (O). The electronegativity of aluminum (Al) is 1.61, the electronegativity of oxygen (O) is 3.44, and the electronegativity of iodine (I) is 2.66. In this case, the electronegativity difference between aluminum (Al) and iodine (I) may be 1.05, and the electronegativity difference between oxygen (O) and iodine (I) may be 0.78.

In the present invention, the surface region (900) may include nitrogen (N). As shown in FIG. 7, the inner wall of the process chamber (100) may include a surface region (900) including nitrogen (N). In this case, iodine (I) may be blocked from bonding with the inner wall of the process chamber (100). In addition, the electronegativity of nitrogen (N) may be 3.04, and the electronegativity difference between nitrogen (N) and iodine (I) may be 0.38.

As illustrated in FIGS. 6 and 7, the electronegativity difference between nitrogen (N) and iodine (I) may be formed to be smaller than the electronegativity difference between aluminum (Al) and iodine (I) and the electronegativity difference between oxygen (O) and iodine (I). Since the electronegativity difference between nitrogen (N) and iodine (I) is relatively small, the bond between nitrogen (N) and iodine (I) is formed to be small, and thus, when the thin film deposition process is completed, iodine (I) may be discharged from the process chamber (100) without being bound to nitrogen (N).

FIG. 7 illustrates that the surface of the inner wall of the process chamber (100) is surface-treated to form a surface area (900), but as described above, the surface area (900) may also be formed by surface-treating the surfaces of various surface treatment targets, such as a gas injection unit (500), a substrate support unit (200), and a substrate (W).

Figure 8 is a drawing for explaining the process cycle.

Referring to FIG. 8, multiple processes can be sequentially performed to deposit a thin film (900) on a substrate (W).

A surface treatment process may be performed before deposition of a thin film (900) on a substrate (W). A surface treatment gas may be injected into a process chamber (100) for the surface treatment process. The surface treatment gas may contain nitrogen.

As the surface treatment gas is injected into the process chamber (100), RF power can be supplied to the process chamber (100) by the power supply unit (600). By supplying the RF power, the surface treatment gas can be converted into a plasma state. The surface treatment gas in the plasma state can react with the surface of the surface treatment target to form a surface area (900).

The control unit (700) can adjust the size of RF power while the surface treatment process is being performed. The surface treatment process can be performed in multiple stages, and the control unit (700) can supply RF power of individual sizes for each stage.

If an excessively large RF power is supplied at the beginning of the surface treatment process, the surface of the surface treatment target may be damaged. A relatively small amount of RF power may be supplied to the process chamber (100) at the beginning of the surface treatment process, and then the RF power may be increased. For example, the surface treatment process may be performed in three stages, and a larger RF power may be supplied in the second stage compared to the first stage. The amount of RF power in the third stage may be the same as the amount of RF power in the first stage, or may be smaller than the amount of RF power in the second stage, and larger than the amount of RF power in the first stage.

After the surface treatment process is performed, a thin film deposition process may be performed. A source gas may be injected into the process chamber (100) to deposit a thin film (900) on the substrate (W). The source purge gas may be continuously supplied to pressurize the source gas while the process for the substrate (W) is in progress. The source gas may be sprayed onto the surface of the substrate (W) through the showerhead (520). Some of the source gas sprayed onto the substrate (W) may be adsorbed onto the surface of the substrate (W), and some may not be adsorbed. The non-adsorbed source gas may be deposited on the adsorbed source gas or may float inside the process chamber (100).

After the source gas is sprayed onto the substrate (W), the source gas may be purged in the process chamber (100). The step of purging the source gas in the process chamber (100) may include a step of discharging the source gas and the surface treatment gas that are not adsorbed on the surface of the substrate (W) from the process chamber (100). That is, when the source gas is purged in the process chamber (100), only the source gas adsorbed on the substrate (W) remains, and the source gas and the surface treatment gas that are laminated on the adsorbed source gas or floated in the process chamber (100) may be discharged to the outside of the process chamber (100). Accordingly, a single source gas layer may be formed on the surface of the substrate (W).

After the source gas is purged, a reaction gas may be injected into the process chamber (100). The reaction purge gas may be continuously supplied while the process for the substrate (W) is in progress to pressurize the reaction gas. The reaction gas may be sprayed onto the surface of the substrate (W) through the showerhead (520). The reaction gas may react with the source gas adsorbed on the substrate (W) to form a thin film (900). In order to improve the reactivity between the reaction gas and the source gas, when the reaction gas is injected into the process chamber (100), RF power may be applied to the process chamber (100) so that the reaction gas may be converted into a plasma state. The source gas may also be converted into a plasma state by the RF power.

A source gas and a reaction gas in a plasma state can react to form a thin film (900) with high reaction efficiency.

After RF power is applied, the reaction gas can be purged from the process chamber (100). That is, RF power is applied for a certain period of time to convert the reaction gas into plasma, and when the period of time has elapsed, the supply of RF power is stopped, and then the reaction gas can be purged.

The step of purging the reaction gas from the process chamber (100) includes the step of discharging process byproducts such as reaction gas, surface treatment gas, and plasma that are not used to form a thin film (900) on the surface of the substrate (W) from the process chamber (100).

The process of supplying source gas and reaction gas to the process chamber (100) to form a thin film (900) forms one process cycle, and multiple layers of thin films (900) can be deposited on the substrate (W) through multiple process cycles.

Since the thin film deposition process is performed after the surface treatment process, the formation of a deposition product (800) of an iodine component on the surface of the surface treatment target can be prevented.

Figure 9 is a drawing for explaining the surface treatment process.

Referring to FIG. 9, the surface treatment process may include a first surface treatment process, a second surface treatment process, and a third surface treatment process. The first surface treatment process, the second surface treatment process, and the third surface treatment process are performed sequentially, and a surface treatment gas may be injected into the internal space of the process chamber (100) through each process.

The first surface treatment process may include a process in which a first surface treatment gas is sprayed into the internal space of the process chamber (100), the second surface treatment process may include a process in which a second surface treatment gas is sprayed into the internal space of the process chamber (100), and the third surface treatment process may include a process in which a third surface treatment gas is sprayed into the internal space of the process chamber (100).

The first surface treatment gas may be a mixed gas. To be more specific, the first surface treatment gas may be a mixed gas including a first gas and a second gas. One of the first gas and the second gas may include nitrogen (N), and the other may not include nitrogen (N). For example, the first gas may include nitrogen (N ₂ ) and the second gas may include hydrogen (H ₂ ).

The flow rates (sccm) of the first gas and the second gas included in the first surface treatment gas may be different from each other. To explain this in detail, when the first surface treatment process is performed, the flow rate of the first gas may be formed to be greater than the flow rate of the second gas.

The second surface treatment gas may be a mixed gas. To be more specific, the second surface treatment gas may be a mixed gas containing the first gas and the third gas. Like the first gas, the third gas may contain nitrogen (N). For example, the third gas may contain ammonia (NH ₃ ).

The flow rates (sccm) of the first gas and the third gas included in the second surface treatment gas may be the same. Meanwhile, according to some embodiments of the present invention, the flow rates (sccm) of the first gas and the third gas included in the second surface treatment gas may be different from each other. To explain this in detail, when the second surface treatment process is performed, the flow rate of the first gas may be formed to be greater than the flow rate of the third gas.

The third surface treatment gas may be a single gas. To elaborate, the third surface treatment gas may be a single gas containing the first gas.

The flow rate of the first gas used in the third surface treatment process may be different from the flow rates of the first gas used in each of the first surface treatment process and the second surface treatment process. To explain this in detail, the flow rate of the first gas used in the third surface treatment process may be formed to be less than the flow rates of the first gas used in each of the first surface treatment process and the second surface treatment process.

The first surface treatment process may include a process of converting a first surface treatment gas into a plasma state, the second surface treatment process may include a process of converting a second surface treatment gas into a plasma state, and the third surface treatment process may include a process of converting a third surface treatment gas into a plasma state.

To explain in more detail, the first surface treatment process may include a process in which a first RF power is supplied and a first surface treatment gas provided to the substrate (W) is converted into a plasma state, the second surface treatment process may include a process in which a second RF power is supplied and a second surface treatment gas provided to the substrate (W) is converted into a plasma state, and the third surface treatment process may include a process in which a third RF power is supplied and a third surface treatment gas provided to the substrate (W) is converted into a plasma state.

The control unit (700) can form the second RF power among the first to third RF powers to be the largest. By forming the RF power to be small at the beginning and end of the surface treatment process, damage to the surface of the surface treatment target can be prevented.

Fig. 10 is a drawing showing a surface area, and Fig. 11 is a graph showing the nitrogen concentration of the surface area shown in Fig. 10.

Referring to FIGS. 10 and 11, the surface region (900) on which the surface treatment process is completed includes a first surface region (910), a second surface region (920), and a third surface region (930), and each surface region (910, 920, 930) may have a different nitrogen concentration. FIG. 10 illustrates a surface region (900) formed on an inner wall of a process chamber (100). The first to third surface regions (910, 920, 930) may be sequentially formed in a direction in which the depth of the surface of the process chamber (100) decreases.

The first surface treatment process represents a preliminary step for forming a first surface region (910) containing nitrogen (N) on the surface of a surface treatment target. To this end, among the first gas and the second gas included in the first surface treatment gas, only the first gas may contain nitrogen (N), and the first surface treatment gas may be converted into a plasma state by first RF power having a relatively low magnitude. Accordingly, the nitrogen concentration of the first surface region (910) may be formed to be relatively low. In addition, as the depth of the surface of the process chamber (100) progresses in a direction in which it becomes smaller, the nitrogen concentration in the first surface region may increase.

The second surface treatment process represents a step for forming a second surface region (920) containing a relatively high density of nitrogen (N) to reduce the reactivity with iodine. To this end, both the first gas and the third gas contained in the second surface treatment gas may contain nitrogen (N), and the second surface treatment gas may be converted into a plasma state by a second RF power that is greater than the first RF power. Accordingly, the nitrogen concentration of the second surface region (920) may be formed relatively high. In addition, as the depth of the surface of the process chamber (100) progresses in a direction in which it becomes smaller, the nitrogen concentration in the second surface region may increase.

The third surface treatment process represents a step of forming a third surface region (930) that protects the surface of the surface treatment target. To this end, the third surface treatment gas may include only a first gas containing nitrogen (N), and the third surface treatment gas may be converted into a plasma state by a third RF power that is smaller than the second RF power. Here, the third RF power may be the same as the first RF power. Accordingly, the nitrogen concentration of the third surface region (930) may be formed to be higher than that of the first surface region (910) and lower than that of the second surface region (920). In addition, the nitrogen concentration may be maximum at the boundary between the second surface region and the third surface region, and the nitrogen concentration in the third surface region may decrease as the depth of the surface of the process chamber (100) decreases. The nitrogen concentration in the third surface region may be formed to be generally larger than that of the first surface. The first surface treatment process, the second surface treatment process, and the third surface treatment process may be performed for a preset time. The first surface treatment process may be performed for a first time, the second surface treatment process may be performed for a second time, and the third surface treatment process may be performed for a third time. Here, the first to third times may be the same. Alternatively, the first time, the second time, and the third time may be different. For example, the second time may be longer than the first time and the third time, and the first time and the third time may be the same. Alternatively, the third time may be longer than the first time.

Figure 12 is a table showing the process conditions of the surface treatment process.

Referring to FIG. 12, a process condition table (1000) according to an experimental example of the present invention specifies the type of surface treatment gas, the flow rate of surface treatment gas, the size of RF power, the supply time of RF power, and the substrate spacing.

The surface treatment process includes a first surface treatment process, a second surface treatment process, and a third surface treatment process. In the first surface treatment process, nitrogen and hydrogen are sprayed into the internal space of the process chamber (100), in the second surface treatment process, nitrogen and ammonia are sprayed into the internal space of the process chamber (100), and in the third surface treatment process, nitrogen is sprayed into the internal space of the process chamber (100).

The size of RF power can be formed larger in the second surface treatment process compared to the first surface treatment process, and smaller in the third surface treatment process compared to the second surface treatment process.

The supply of surface treatment gas and plasma conversion of the surface treatment gas can be performed while the substrate support (200) is raised to the process treatment space (SP1).

Figure 13 is a flow chart showing a substrate processing method according to an embodiment of the present invention.

Referring to FIG. 13, a substrate treatment method according to an embodiment of the present invention may include a step (S1110) in which a surface treatment process is performed on a surface of a surface treatment target and a step (S1120) in which a thin film deposition process is performed on a substrate (W) on which the surface treatment process has been completed.

The surface treatment process may include a first surface treatment process, a second surface treatment process, and a third surface treatment process. Since the first surface treatment process, the second surface treatment process, and the third surface treatment process have been described above, a detailed description thereof will be omitted.

The surface treatment process may include a process for preventing bonding between a process material used for deposition of a thin film and a surface treatment target existing in the internal space of the process chamber (100). Specifically, the surface treatment process may include a process for controlling the nitrogen concentration in a surface area of a process chamber (100) that provides a process treatment space for a process for a substrate (W).

In the present invention, the process material used in the thin film deposition process may include iodine (I), and the surface region (900) may include a component that is formed to have a relatively small difference in electronegativity with respect to the process material. For example, the surface region (900) may be configured to include nitrogen (N), and the difference in electronegativity between the process material and the surface region (900) may be formed to be small compared to the difference in electronegativity between the process material and other parts of the surface treatment target.

Due to the small electronegativity difference, the process material is prevented from attaching to the surface area (900), and the process material can be easily discharged from the process chamber (100).

Although the embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims (10)

A process chamber providing a process treatment space for a process on a substrate; and Including a control unit for controlling a process for the above substrate, The above control unit causes a surface treatment process to be performed on the internal space of the process chamber before a thin film deposition process is performed on the substrate. The process material used in the above thin film deposition process contains iodine, A substrate processing device, wherein the surface treatment process includes a process for controlling the nitrogen concentration in a surface area of the process chamber. In the first paragraph, A substrate processing device in which the surface area of the process chamber in which the surface treatment process has been completed includes first to third surface areas sequentially formed in a direction in which the depth of the surface of the process chamber decreases. In the second paragraph, A substrate processing device wherein the nitrogen concentration in each of the first surface area and the second surface area increases as the depth of the surface of the process chamber decreases. In the second paragraph, A substrate processing device in which the nitrogen concentration in the third surface area decreases as the depth of the surface of the process chamber decreases. A step in which a surface treatment process is performed on the substrate; and Including a step of performing a thin film deposition process on a substrate on which the above surface treatment process has been completed, The process material used in the above thin film deposition process contains iodine, A substrate processing method, wherein the surface processing process includes a process of controlling the nitrogen concentration in a surface area of a process chamber that provides a process processing space for a process for the substrate. In clause 5, The above surface treatment process is, A first surface treatment process in which a first surface treatment gas is sprayed onto the substrate; A second surface treatment process in which a second surface treatment gas is sprayed onto the substrate; and A substrate treatment method comprising a third surface treatment process in which a third surface treatment gas is sprayed onto the substrate. In Article 6, The above first surface treatment gas includes a first gas and a second gas, The second surface treatment gas comprises the first gas and the third gas, A substrate processing method wherein the third surface treatment gas comprises the first gas. In Article 6, The above first surface treatment process includes a process of converting the first surface treatment gas into a plasma state with a first RF power, The second surface treatment process includes a process of converting the second surface treatment gas into a plasma state with a second RF power, The third surface treatment process includes a process of converting the third surface treatment gas into a plasma state with third RF power, A substrate processing method in which the second RF power among the first to third RF powers is formed to be the largest. In Article 6, The above first surface treatment process is performed for a first hour, The above second surface treatment process is carried out for a second time, The above third surface treatment process is carried out for a third time, A substrate processing method in which the second time is formed longer than the first time and the third time. In clause 5, A substrate treatment method, wherein the surface treatment process includes a process for preventing bonding between the process material and the surface of a surface treatment target existing in the internal space of the process chamber.

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