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WO2025003072A1 - Optoelectronic component and method of manufacturing an optoelectronic component - Google Patents

Optoelectronic component and method of manufacturing an optoelectronic component Download PDF

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Publication number
WO2025003072A1
WO2025003072A1 PCT/EP2024/067676 EP2024067676W WO2025003072A1 WO 2025003072 A1 WO2025003072 A1 WO 2025003072A1 EP 2024067676 W EP2024067676 W EP 2024067676W WO 2025003072 A1 WO2025003072 A1 WO 2025003072A1
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WO
WIPO (PCT)
Prior art keywords
waveguide
led unit
optoelectronic component
layer
active area
Prior art date
Application number
PCT/EP2024/067676
Other languages
French (fr)
Inventor
Christian SCHOERNER
Martin Hetzl
Georg ROSSBACH
Christopher Wiesmann
Rasoul ALAEE
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2025003072A1 publication Critical patent/WO2025003072A1/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements

Definitions

  • the current invention relates to an optoelectronic component and a method of manufacturing an optoelectronic component .
  • Optoelectronic components including waveguides for transmission of photonic signals are known from state of the art .
  • An obj ective of the current application is to provide an improved optoelectronic component and an improved method of manufacturing an optoelectronic component .
  • Said obj ective is achieved by the optoelectronic component and the method of the independent claims . Further embodiments are subj ect of the dependent claims .
  • an optoelectronic component especially a photonic integrated circuit , comprising an optical waveguide structure with at least one optical waveguide and at least one p-LED unit with an active area, wherein the active area of the p-LED unit is integrated monolithically into the at least one optical waveguide , and wherein the active area of the p-LED unit is at least partially covered by a material of the at least one optical waveguide .
  • an improved optical component with an optical waveguide structure and a p-LED unit integrated into the optical waveguide structure can be provided .
  • the p-LED unit is integrated monolithically into the optical waveguide structure with an active area of the p-LED unit being at least partially covered by the waveguide material of the optical waveguide structure an optimi zed coupling of light transmitted by the p-LED unit into the optical waveguide structure can be achieved .
  • Light of the p-LED unit that is not coupled into the optical modes of the waveguide structure can be reduced to a minimum .
  • the active area of the p-LED unit protrudes into the material of the waveguide .
  • the technical advantage can be achieved, that with the protruding of the p-LED unit into the waveguide material of the waveguide structure it can be secured that the active area of the p-LED unit is positioned in an optimal position within the optical waveguide structure to couple the light of the p-LED unit into the optical waveguide structure with a minimum of light loss .
  • the active area is positioned between a positively doped layer and a negatively doped layer of the p-LED unit , and wherein a material of the active area and/or a material of the positively doped layer and/or a material of the negatively doped layer have a refractive index deviating from a refractive index of the material of the waveguide by a maximum of 0 . 7 , more advantageously by a maximum of 0 . 5 , most advantageously by a maximum of 0 . 1 .
  • the technical advantage can be achieved, that due to the refractive indices of the materials of the active layer and/or the positively doped layer and/or the negatively doped layer of the p-LED unit being similar to the refractive index of the waveguide material of the waveguide structure the p- LED unit can be fully integrated into the waveguide structure . Due to the similarity of refractive indices of the materials of the p-LED unit and the material of the waveguide structure the amount of light reflection at the material of the p-LED unit within the material of the waveguide structure can be limited to a minimum . As a result , optical losses during transmission of the light signals of the p-LED unit within the optical waveguide structure can be limited to a minimum due to the impedance matching . According to an embodiment the active area of the p-LED unit is positioned in a region of the waveguide structure with highest optical intensity of an optical mode of the waveguide structure .
  • the technical advantage can be achieved, that due to the positioning of the active area of the p-LED unit in a region of the waveguide structure with highest optical intensity an optical incoupling and transmission of the light signals of the p-LED unit within the waveguide structure can be achieved .
  • the at least one waveguide is a single mode waveguide and/or a multi-mode waveguide .
  • the at least one waveguide is a uni-directional waveguide .
  • one end of the uni-directional waveguide is provided with a reflective surface .
  • the reflective surface can be reali zed via a photonic crystal Bragg mirror or via a metallic mirror .
  • the at least one waveguide is a bi-directional waveguide or a multi-directional waveguide .
  • the technical advantage can be achieved, that a bidirectional or multi-directional signal transmission of the optical signals of the p-LED unit is possible .
  • the waveguide structure comprises a first cladding layer and a second cladding layer, and wherein the at least one waveguide and the active area of the p-LED unit are positioned between the first and second cladding layers .
  • the first and second cladding layers comprise a positively doped cladding layer and a negatively doped cladding layer .
  • material of the first and second cladding layers have a refractive index lower than the material of the waveguide .
  • the technical advantage can be achieved, that due to the refractive indices of the materials of the first and second cladding layers being lower than the refractive index of the waveguide material of the waveguide structure total refractions of the light signals of the p-LED unit at the first and second cladding layers can be achieved . As a result , signal losses of the light signals transmitted through the wave guide can be reduced to a minimum .
  • the first and second cladding layers are provided with electrical contact elements , respectively .
  • the technical advantage can be achieved, that due to the electrical contact elements an ef ficient electrical contacting of the p-LED unit via the first and second cladding layers can be achieved . Due to the doped cladding layers and the contact elements the pLED unit can be driven electrically .
  • the p-LED unit has a shape with optimal side emission and suppressed top emission of LED signals .
  • the shape of the p-LED unit can be trapezoidal for example .
  • At least one sidewall of the active area stacked between the positively doped layer and the negatively doped layer is provide with an electrical passivation layer .
  • a hori zontal width of the p-LED unit is between 300 nm and 10 pm .
  • a vertical thickness of the waveguide structure comprising the waveguide material of the at least one waveguide , the p-LED unit and the positively doped cladding layer is between 0 . 2 pm and 10 pm .
  • an optimal si zed waveguide structure including a p-LED unit can be provided .
  • the vertical thickness of the waveguide material is between 100 nm and 3 pm, wherein the vertical thickness of the p-LED unit is between 100 nm and 2 pm, and wherein the vertical thickness of the positively doped cladding layer is between 100 nm and 2 pm .
  • an optimal si zed waveguide structure including a p-LED unit can be provided .
  • an optical waveguide structure comprising at least one optical waveguide and at least one p-LED unit on the first cladding layer, wherein an active area of the p-LED unit is integrated monolithically into the at least one optical waveguide , and wherein the active layer of the p-LED unit is at least partially covered by a material of the at least one optical waveguide ;
  • the applying of the optical waveguide structure comprises : Applying the p-LED unit on the first cladding layer by performing a semiconductor growth process ;
  • the deposition process can be a sputter process , an evaporation process , a spin-coating process , a liquid-phase deposition process or any other suitable process .
  • the applying of the p-LED unit comprises : Performing an island etching process of the p-LED unit .
  • the p-LED unit can be grown into the desired shape .
  • the etching process is redundant .
  • the technical advantage can be achieved, that through the structuring process of the first cladding layer a definition of the p-LED unit is achieved .
  • the material of the p-LED unit can be applied in an unstructured fashion and the definition of the p-LED unit can be achieved solely by the structuring of the first cladding layer .
  • An electrical conduction only occurs at the area of the structured first cladding layer such that in the areas , where the first cladding layer is removed through the structuring process , no electric conduction occurs such that a clear definition of the p-LED unit is achieved .
  • an alternative waveguide structure with a p-LED unit can be provided in which the p-LED unit is formed into an accommodation space within the waveguide material .
  • Figure 1 a schematic view of an optoelectronic component according to an embodiment
  • Figure 2 a further schematic view of an optoelectronic component according to a further embodiment
  • Figure 3 a schematic illustration of method steps of a method for manufacturing of an optoelectronic component according to an embodiment
  • Figure 4 a further schematic view of an optoelectronic component according to a further embodiment
  • Figure 5 a further schematic view of an optoelectronic component according to a further embodiment
  • Figure 6 a further schematic view of an optoelectronic component according to a further embodiment
  • Figure 7 schematic views of waveguides of an optoelectronic component according to di f ferent embodiments ;
  • Figure 8 further schematic views of waveguides of an optoelectronic component according to further embodiments ;
  • Figure 9 a further schematic view of an optoelectronic component according to a further embodiment
  • Figure 10 a further schematic view of an optoelectronic component according to a further embodiment
  • Figure 11 a further schematic view of an optoelectronic component according to a further embodiment .
  • Figure 1 shows a schematic view of an optoelectronic component 100 according to an embodiment .
  • Figure 1 shows a sectional view of the waveguide structure 101 along a longitudinal direction of the waveguide 103 .
  • the optoelectronic component 100 comprises an optical waveguide structure 101 with at least one optical waveguide 103 and an p-LED unit 105 .
  • the p-LED unit 105 is monolithically integrated into the optical waveguide 103 of the optical waveguide structure 101 .
  • the p-LED unit 105 comprises an active area 107 stacked between a positively doped layer 111 and a negatively doped layer 113 .
  • the p-LED unit 105 is stacked on top of a first cladding layer 119 .
  • the first cladding 119 is designed as a negatively doped cladding layer 125 and is in direct contact with the negatively doped layer 113 of the p-LED unit 105 .
  • the p-LED unit 105 is in the shown embodiment completely covered by the waveguide material 109 of the optical waveguide 103 of the optical waveguide structure 101 .
  • a second cladding layer 121 is provided on top of the waveguide material 109 of the optical waveguide 103 .
  • the second cladding layer 121 is designed as a positively doped cladding layer 123 .
  • the first cladding layer 119 and the second cladding layer 121 are provided with electrical contact elements 127 to provide an electrical contact of the p-LED unit 105 integrated monolithically into the waveguide 103 .
  • the waveguide 103 is stacked between two oxide-layers 137 .
  • the oxide-layers 137 can be silicondioxide layer .
  • the oxide-layer 137 can in particular be a part of a photonic integrated circuit into which the optoelectronic component 100 is integrated .
  • the upper oxide-layer 137 is formed as an electric current aperture 139 comprising an electric current opening 141 .
  • the p-LED unit 105 has a substantially trapezoidal shape with two angled side walls 129 .
  • the side walls 129 can be provided with an electrical passivation layer 131 .
  • the material of the active area 107 , the positively doped layer 111 and the negatively doped layer 113 can comprise a refractive index deviating from a refractive index of the waveguide material 109 of the optical waveguide 103 by a maximum of 0 . 5 , advantageously by a maximum of 0 . 3 , most advantageously by a maximum of 0 . 1 .
  • the materials of the first and second cladding layers 119 , 121 comprise refractive indices lower than the refractive index of the waveguide material 109 .
  • an optical waveguide mode can span the entire region between the first and second cladding layers 119 , 121 as well as the region between both cladding layers 137 at positions next to the pLED 105 . Due to the refractive indices of the first and second cladding lay- ers 119 , 121 being lower than the refractive index of the waveguide material 109 of the optical waveguide 103 total reflection of the waveguide modes at the first and second cladding layers 119 , 121 or at the region between both cladding layers 137 at positions next to the pLED 105can be achieved . This results in a reduction of signal loss .
  • the waveguide material 109 can be an epitaxial semiconductor structure compound or a non- epitaxial conducting and highly refractive oxide composition, for example zinc oxide .
  • the waveguide material can be AlGaAs , InGaAlP or GaN/AlGaN . With these compositions it is important hat the Al amount is substancially higher than it is in the cladding layers .
  • ZnCdSe or InGaSb or TiO2 , ZrO2 compositions are possible .
  • nonconductive high refractive oxides such as Hafnium oxides , Tantalum oxides TiO2 or ZrO2 materials are possible .
  • the p-LED unit 105 can be a 35 semiconductor, for example an InGaAl composition .
  • the p-LED can be fabricated for example based on an InGaAlP composition for red light , an InGaAlAs for infrared light or an InGaAlN for green-blue light .
  • the p-LED unit 105 comprises a width w between 300 nm and 10 pm and a thickness t2 between 100 nm and 2 pm .
  • a vertical thickness tl of the waveguide material 109 of the waveguide 103 is between 100 nm and 3 gm .
  • a vertical thickness t3 of the positively doped cladding layer 123 is between 100 nm and 2 gm .
  • a vertical thickness of the waveguide structure 101 including the waveguide material 109 of the optical waveguide 103 , the g-LED unit 105 and the positively doped cladding layer 123 is between 0 , 2 gm and 10 gm .
  • the active area 107 of the g-LED unit 105 is positioned in a region 115 with highest optical intensity of the waveguide structure 101 .
  • the region 115 with highest optical intensity of the waveguide 103 and with best optical coupling of the g-LED emission to the waveguide 103 can be determined via simulation and is usually positioned approximately in the center of the waveguide 103 .
  • the optical waveguide 103 can be a single mode waveguide and/or a multimode waveguide .
  • the waveguide 103 can be a unidirectional waveguide , a bi-directional waveguide or a multidirectional waveguide .
  • Figure 2 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • Figure 2 shows a sectional view along a transversal direction of the waveguide structure 101 of Fig . 1 .
  • Fig . 2 shows that the waveguide 103 being covered by the oxide layer 137 .
  • the top electrical contact element 127 covers the top part of the waveguide structure 101 and the bottom electrical contact element 127 covers parts of the first cladding layer 119 . Via the bottom and top electrical contact elements 127 an electrical contact of the p-LED unit 105 can be provided .
  • the side walls 129 of the p-LED unit 105 are provided with an electrical passivation layer 131 .
  • Figure 3 shows a schematic illustration of method steps of a method for manufacturing of an optoelectronic component 100 according to an embodiment .
  • the p-LED unit 105 is applied on the first cladding layer 119 by performing a semiconductor growth process .
  • the p-LED unit 105 comprises the negatively doped layer 113 , the active area 107 and the positively doped layer 111 all stacked upon each other .
  • the first cladding layer 119 is positioned on a buf fer layer 135 that is positioned on a substrate 133 .
  • the material of the negatively doped layer 113 , the active area 107 and the positively doped layer 111 are provided as layers on top of the first cladding layer 119 .
  • an island etching process of the materials of the negatively doped layer 113 , the active area 107 and the positively doped layer 111 is performed to form the p-LED unit 105 .
  • the predominant trapezoidal shape of the p- LED unit 105 is generated .
  • the side walls 129 of the p-LED unit 105 are further provided with an electrical passivation layer 131 .
  • At least one optical waveguide 103 of the optical waveguide structure 101 is applied on top of the p-LED unit 105 by performing a semiconductor regrowth process or by performing a chemi- cal/physical sputter process .
  • oxide layer 137 is applied on top of the waveguide material 109 of the optical waveguide 103 .
  • the oxide layer 137 is formed as an electrical current aperture 139 comprising an electric current opening 141 .
  • a second cladding layer 121 is applied on top of the oxide layer 137 .
  • an electrical contact element 127 is applied on top of the second cladding layer 121 .
  • the substrate 133 and the buf fer layer 135 are removed from the first cladding layer 119 .
  • the first cladding layer 119 is structured and by this partially removed from the optical waveguide 103 .
  • structured first cladding layer 119 is provided with electrical contact elements 127 .
  • a further oxide layer 137 is applied on the structured first cladding layer 119 .
  • the first cladding layer 119 is designed as a negatively doped cladding layer whereas the second cladding layer is designed as a positively doped cladding layer .
  • Figure 4 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • Figure 4 shows another embodiment of the optoelectronic component 100 in the stage of graphic c ) of the method illus- trated in Figure 3 .
  • the optical waveguide structure 101 comprising at least one optical waveguide 103 and at least one p-LED unit 105 on the first cladding layer 119 at first the waveguide material 109 of the at least one optical waveguide 103 is applied on top of the first cladding layer 119 by ether performing a semiconductor regrowth process or a chemical/physical sputter process of the waveguide material 109 .
  • an etch process on a first surface 159 of the waveguide material 109 is performed and an accommodating space 149 is formed in the waveguide material 109 of the optical waveguide 103 .
  • the p-LED unit 105 including the negatively doped layer 113 , the active area 107 and the positively doped layer 111 are applied into the accommodating space 149 of the waveguide material 109 by performing a semiconductor growth process .
  • the oxide layer 137 in form of the electric current aperture 139 including the electric current opening 141 , the second cladding layer 121 and the electrical contact element 127 are applied on top of the waveguide 103 and the p-LED unit 105 .
  • Figure 5 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • the p-LED unit 105 is defined via a structuring of the first cladding layer 119 .
  • the waveguide material 109 of the at least one waveguide 103 is directly applied on the layer of materials of the negatively doped layer 113 , the active area 107 and the positively doped layer 111 as provided in the method steps illustrated in graphic a ) of Fig . 3 .
  • the second cladding layer 121 and the electrical contact elements 127 are applied on the waveguide 103 according to the method steps illustrated in graphic c ) of Fig . 3 .
  • the substrate 133 and the buf fer layer 135 are removed from the first cladding layer 119 .
  • the first cladding layer 119 is structured by partially removing the first cladding layer 119 from the negatively doped layer 113 and generating a structure 143 of removed first cladding layer 119 .
  • Further electrical contact elements 127 are applied on the structured first cladding layer 119 .
  • the definition of the p-LED unit 105 is achieved .
  • the electrical connectivity through the negatively doped layer 113 , the active area 107 and the positively doped layer 111 is very poor, such that an electric connectivity is only achieved through said layers in the area of the first cladding layer 119 , where the electrical conductivity is suf ficient .
  • the p-LED unit 105 is confined to the area of the first cladding layer 119 and multiple p-LED units 105 are separated by the structured areas 143 of the first cladding 119 .
  • Figure 6 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • the p-LED unit 105 is integrated into a uni-directional waveguide 103 .
  • the p-LED unit 105 is positioned at a dead end of the uni-directional waveguide 103 .
  • the optoelectronic component 100 is designed as a photonic integrated circuit and the waveguide structure 101 including the uni-directional waveguide 103 and the integrated p-LED unit 105 is formed on a photonic integrated circuit chip 151 .
  • the second cladding layer 121 is a transparent conductive oxide TCO .
  • the p-side cladding layer 122 it is an indium tin oxide , which is transparent and conductive and of fers a suitable refractive index between 1 . 96 and 1 . 76 in a visible range .
  • the negatively doped cladding layer 125 is a Al InGaN or a InGaAlP composition .
  • Figure 7 shows schematic views of waveguides 103 of an optoelectronic component 100 according to di f ferent embodiments .
  • the p-LED unit 105 is integrated into a bi-directional waveguide 103 .
  • the bidirectional waveguide 103 is designed as a single mode waveguide that provides a single transmission of only a single wave mode 145 of the light signals of the p-LED unit 105 .
  • the bi-directional waveguide 103 is designed as a multi-mode waveguide allowing a single transmission of multiple wave modes 145 of the light signals of the p-LED unit 105 .
  • the p-LED unit 105 can be integrated into a bi-directional waveguide 103 allowing for a bi-directional signal transmission .
  • the p-LED unit 105 is integrated into a uni-directional waveguide 103 allowing for a uni-directional signal transmission .
  • the p-LED unit 105 is integrated into a multi-directional waveguide 103 allowing for a multi-directional signal transmission .
  • Figure 8 shows further schematic views of waveguides 103 of an optoelectronic component 100 according to further embodiments .
  • the p-LED unit 105 is integrated into a uni-directional waveguide 103 .
  • a dead end of the uni-directional waveguide 103 is provided with a reflective surface 117 .
  • the reflective surface 117 can be formed as a metal reflector as illustrated in graphic a ) or as a dielectric stack reflector or as photonic crystal Bragg mirror as illustrated in graphic b ) .
  • Figure 9 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • the optoelectronic component 100 comprises a waveguide structure 101 comprising multiple waveguides 103 with each waveguide 103 comprising multiple p-LED units 105 according to the above-mentioned embodiments .
  • the photonic integrated circuit chip 151 can be connected to further light transmitting components .
  • the waveguides 103 can be coupled to each other via grating or via multimode interference coupler structures or via evanescent coupling .
  • Figure 10 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • the p-LED unit 105 is integrated into a bidirectional waveguide 103 and a multi-directional waveguide 103 , respectively .
  • the bi-directional waveguide 103 and the multi-directional waveguide 103 is connected to a further waveguide 107 via edge coupling 155 .
  • Figure 11 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
  • the p-LED unit 105 is integrated into a unidirectional or bi-directional waveguide 103 .
  • the uni- directional or bi-directional waveguide 103 is coupled to a further waveguide 147 via an evanescent coupling 157 .

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Abstract

A Optoelectronic component is provided. The optoelectronic component comprises an optical waveguide structure with at least one optical waveguide and at least one µ-LED unit with an active area, wherein the active area of the µ-LED unit is integrated monolithically into the at least one optical waveguide, and wherein the active area of the µ-LED unit is at least partially covered by a waveguide material of the at least one optical waveguide. Further a method for manufacturing an optoelectronic component is provided.

Description

OPTOELECTRONIC COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC COMPONENT
Description
The current invention relates to an optoelectronic component and a method of manufacturing an optoelectronic component .
Optoelectronic components including waveguides for transmission of photonic signals are known from state of the art .
An obj ective of the current application is to provide an improved optoelectronic component and an improved method of manufacturing an optoelectronic component .
Said obj ective is achieved by the optoelectronic component and the method of the independent claims . Further embodiments are subj ect of the dependent claims .
According to an aspect of the invention an optoelectronic component , especially a photonic integrated circuit , is provided, comprising an optical waveguide structure with at least one optical waveguide and at least one p-LED unit with an active area, wherein the active area of the p-LED unit is integrated monolithically into the at least one optical waveguide , and wherein the active area of the p-LED unit is at least partially covered by a material of the at least one optical waveguide .
Hereby the technical advantage can be achieved, that an improved optical component with an optical waveguide structure and a p-LED unit integrated into the optical waveguide structure can be provided . As the p-LED unit is integrated monolithically into the optical waveguide structure with an active area of the p-LED unit being at least partially covered by the waveguide material of the optical waveguide structure an optimi zed coupling of light transmitted by the p-LED unit into the optical waveguide structure can be achieved . Light of the p-LED unit that is not coupled into the optical modes of the waveguide structure can be reduced to a minimum .
According to an embodiment the active area of the p-LED unit protrudes into the material of the waveguide .
Hereby the technical advantage can be achieved, that with the protruding of the p-LED unit into the waveguide material of the waveguide structure it can be secured that the active area of the p-LED unit is positioned in an optimal position within the optical waveguide structure to couple the light of the p-LED unit into the optical waveguide structure with a minimum of light loss .
According to an embodiment the active area is positioned between a positively doped layer and a negatively doped layer of the p-LED unit , and wherein a material of the active area and/or a material of the positively doped layer and/or a material of the negatively doped layer have a refractive index deviating from a refractive index of the material of the waveguide by a maximum of 0 . 7 , more advantageously by a maximum of 0 . 5 , most advantageously by a maximum of 0 . 1 .
Hereby the technical advantage can be achieved, that due to the refractive indices of the materials of the active layer and/or the positively doped layer and/or the negatively doped layer of the p-LED unit being similar to the refractive index of the waveguide material of the waveguide structure the p- LED unit can be fully integrated into the waveguide structure . Due to the similarity of refractive indices of the materials of the p-LED unit and the material of the waveguide structure the amount of light reflection at the material of the p-LED unit within the material of the waveguide structure can be limited to a minimum . As a result , optical losses during transmission of the light signals of the p-LED unit within the optical waveguide structure can be limited to a minimum due to the impedance matching . According to an embodiment the active area of the p-LED unit is positioned in a region of the waveguide structure with highest optical intensity of an optical mode of the waveguide structure .
Hereby the technical advantage can be achieved, that due to the positioning of the active area of the p-LED unit in a region of the waveguide structure with highest optical intensity an optical incoupling and transmission of the light signals of the p-LED unit within the waveguide structure can be achieved .
According to an embodiment the at least one waveguide is a single mode waveguide and/or a multi-mode waveguide .
Hereby the technical advantage can be achieved, that a high applicability of the waveguide structure for transmission of di f ferent optical signals can be secured .
According to an embodiment the at least one waveguide is a uni-directional waveguide .
Hereby the technical advantage can be achieved, that a unidirectional signal transmission is possible .
According to an embodiment one end of the uni-directional waveguide is provided with a reflective surface .
Hereby the technical advantage can be achieved, that due to the reflective surface at the closed end of the unidirectional waveguide signal losses of the optical signals of the p-LED unit can be limited . The reflective surface can be reali zed via a photonic crystal Bragg mirror or via a metallic mirror .
According to an embodiment the at least one waveguide is a bi-directional waveguide or a multi-directional waveguide . Hereby the technical advantage can be achieved, that a bidirectional or multi-directional signal transmission of the optical signals of the p-LED unit is possible .
According to an embodiment the waveguide structure comprises a first cladding layer and a second cladding layer, and wherein the at least one waveguide and the active area of the p-LED unit are positioned between the first and second cladding layers .
Hereby the technical advantage can be achieved, that through the first and second cladding layers a robust waveguide structure can be provided .
According to an embodiment the first and second cladding layers comprise a positively doped cladding layer and a negatively doped cladding layer .
Hereby the technical advantage can be achieved, that through the positively and negatively doped cladding layers an electrical connection of the p-LED unit positioned within the waveguide structure is possible .
According to an embodiment material of the first and second cladding layers have a refractive index lower than the material of the waveguide .
Hereby the technical advantage can be achieved, that due to the refractive indices of the materials of the first and second cladding layers being lower than the refractive index of the waveguide material of the waveguide structure total refractions of the light signals of the p-LED unit at the first and second cladding layers can be achieved . As a result , signal losses of the light signals transmitted through the wave guide can be reduced to a minimum . According to an embodiment the first and second cladding layers are provided with electrical contact elements , respectively .
Hereby the technical advantage can be achieved, that due to the electrical contact elements an ef ficient electrical contacting of the p-LED unit via the first and second cladding layers can be achieved . Due to the doped cladding layers and the contact elements the pLED unit can be driven electrically .
According to an embodiment the p-LED unit has a shape with optimal side emission and suppressed top emission of LED signals .
Hereby the technical advantage can be achieved, that through the shape of the p-LED unit an optimal light-transmission of the light signals of the p-LED unit via the optical waveguide structure is achieved . The shape of the p-LED unit can be trapezoidal for example .
According to an embodiment at least one sidewall of the active area stacked between the positively doped layer and the negatively doped layer is provide with an electrical passivation layer .
Hereby the technical advantage can be achieved, that through the electrical passivation of at least one side wall of the active area of the p-LED unit short circuits can be avoided .
According to an embodiment a hori zontal width of the p-LED unit is between 300 nm and 10 pm .
Hereby the technical advantage can be achieved, that an optimal si zed p-LED unit can be provided .
According to an embodiment a vertical thickness of the waveguide structure comprising the waveguide material of the at least one waveguide , the p-LED unit and the positively doped cladding layer is between 0 . 2 pm and 10 pm .
Hereby the technical advantage can be achieved, that an optimal si zed waveguide structure including a p-LED unit can be provided .
According to an embodiment the vertical thickness of the waveguide material is between 100 nm and 3 pm, wherein the vertical thickness of the p-LED unit is between 100 nm and 2 pm, and wherein the vertical thickness of the positively doped cladding layer is between 100 nm and 2 pm .
Hereby the technical advantage can be achieved, that an optimal si zed waveguide structure including a p-LED unit can be provided .
According to an aspect of the invention a method of manufacturing an optoelectronic component according to any of the previous embodiments is provided, comprising :
- Providing a first cladding layer provided on a substrate ;
- Applying an optical waveguide structure comprising at least one optical waveguide and at least one p-LED unit on the first cladding layer, wherein an active area of the p-LED unit is integrated monolithically into the at least one optical waveguide , and wherein the active layer of the p-LED unit is at least partially covered by a material of the at least one optical waveguide ;
- Applying a second cladding layer on the optical waveguide structure .
Hereby the technical advantage can be achieved, that an improved method for manufacturing an improved optoelectronic component with the above-mentioned technical advantages can be provided .
According to an embodiment the applying of the optical waveguide structure comprises : Applying the p-LED unit on the first cladding layer by performing a semiconductor growth process ;
Applying the at least one optical waveguide on top of the active area of the p-LED unit by performing a semiconductor regrowth process or by performing a chemical/physical deposition process .
Hereby the technical advantage can be achieved, that through the semiconductor regrowth process or the chemical/physical deposition process of the waveguide material of the optical waveguide structure on top of the active area a substantial covering of the p-LED unit by the waveguide material is achieved and the p-LED unit is substantially integrated into the waveguide structure . The deposition process can be a sputter process , an evaporation process , a spin-coating process , a liquid-phase deposition process or any other suitable process .
According to an embodiment the applying of the p-LED unit comprises : Performing an island etching process of the p-LED unit .
Hereby the technical advantage can be achieved, that through the island etching process the advantageous trapezoidal shape of the p-LED unit can be achieved .
Alternatively the p-LED unit can be grown into the desired shape . In this case the etching process is redundant .
According to an embodiment the applying of the p-LED unit comprises :
Applying a layer of a material of the p-LED unit including material of a positively doped layer, a material of a negatively doped layer and a material of the active area on the first cladding; and Performing a structuring process of the first cladding layer, wherein through the structuring of the first cladding layer the layer of the active area is structured into at least one p-LED unit .
Hereby the technical advantage can be achieved, that through the structuring process of the first cladding layer a definition of the p-LED unit is achieved . Hereby the material of the p-LED unit can be applied in an unstructured fashion and the definition of the p-LED unit can be achieved solely by the structuring of the first cladding layer . An electrical conduction only occurs at the area of the structured first cladding layer such that in the areas , where the first cladding layer is removed through the structuring process , no electric conduction occurs such that a clear definition of the p-LED unit is achieved .
According to an embodiment the applying of the optical waveguide structure comprises :
Applying the at least one optical waveguide on top of the first cladding layer by performing a semiconductor regrowth process or a chemical/physical sputter process of a waveguide material ;
Performing an etch process on a first surface of the waveguide material and forming an accommodating space in the waveguide material ; and Applying the active area of the p-LED unit into the accommodating space of the waveguide material by performing a semiconductor growth process .
Hereby the technical advantage can be achieved, that an alternative waveguide structure with a p-LED unit can be provided in which the p-LED unit is formed into an accommodation space within the waveguide material .
According to an embodiment the applying of the p-LED unit comprises :
Applying an electrical passivation layer on at least one sidewall of the p-LED unit . Hereby the technical advantage can be achieved, that via the passivation layer short circuits can be avoided .
The above-described properties , features and advantages of this invention, as well as the manner in which they are achieved, become clearer and more clearly understandable in connection with the following description of the embodiments , which are explained in more detail in connection with the drawings . The figures show :
Figure 1 a schematic view of an optoelectronic component according to an embodiment ;
Figure 2 a further schematic view of an optoelectronic component according to a further embodiment ;
Figure 3 a schematic illustration of method steps of a method for manufacturing of an optoelectronic component according to an embodiment ;
Figure 4 a further schematic view of an optoelectronic component according to a further embodiment ;
Figure 5 a further schematic view of an optoelectronic component according to a further embodiment ;
Figure 6 a further schematic view of an optoelectronic component according to a further embodiment ;
Figure 7 schematic views of waveguides of an optoelectronic component according to di f ferent embodiments ;
Figure 8 further schematic views of waveguides of an optoelectronic component according to further embodiments ;
Figure 9 a further schematic view of an optoelectronic component according to a further embodiment ; Figure 10 a further schematic view of an optoelectronic component according to a further embodiment ; and
Figure 11 a further schematic view of an optoelectronic component according to a further embodiment .
Figure 1 shows a schematic view of an optoelectronic component 100 according to an embodiment . Figure 1 shows a sectional view of the waveguide structure 101 along a longitudinal direction of the waveguide 103 .
In the shown embodiment the optoelectronic component 100 comprises an optical waveguide structure 101 with at least one optical waveguide 103 and an p-LED unit 105 . The p-LED unit 105 is monolithically integrated into the optical waveguide 103 of the optical waveguide structure 101 .
In the shown embodiment the p-LED unit 105 comprises an active area 107 stacked between a positively doped layer 111 and a negatively doped layer 113 . The p-LED unit 105 is stacked on top of a first cladding layer 119 . In the shown embodiment the first cladding 119 is designed as a negatively doped cladding layer 125 and is in direct contact with the negatively doped layer 113 of the p-LED unit 105 .
The p-LED unit 105 is in the shown embodiment completely covered by the waveguide material 109 of the optical waveguide 103 of the optical waveguide structure 101 .
On top of the waveguide material 109 of the optical waveguide 103 a second cladding layer 121 is provided . In the shown embodiment the second cladding layer 121 is designed as a positively doped cladding layer 123 . The first cladding layer 119 and the second cladding layer 121 are provided with electrical contact elements 127 to provide an electrical contact of the p-LED unit 105 integrated monolithically into the waveguide 103 .
In the shown embodiment the waveguide 103 is stacked between two oxide-layers 137 . The oxide-layers 137 can be silicondioxide layer . The oxide-layer 137 can in particular be a part of a photonic integrated circuit into which the optoelectronic component 100 is integrated .
In the shown embodiment the upper oxide-layer 137 is formed as an electric current aperture 139 comprising an electric current opening 141 .
In the shown embodiment the p-LED unit 105 has a substantially trapezoidal shape with two angled side walls 129 . The side walls 129 can be provided with an electrical passivation layer 131 .
According to an embodiment the material of the active area 107 , the positively doped layer 111 and the negatively doped layer 113 can comprise a refractive index deviating from a refractive index of the waveguide material 109 of the optical waveguide 103 by a maximum of 0 . 5 , advantageously by a maximum of 0 . 3 , most advantageously by a maximum of 0 . 1 .
According to a further embodiment the materials of the first and second cladding layers 119 , 121 comprise refractive indices lower than the refractive index of the waveguide material 109 .
Due to the refractive indices of the waveguide material 109 and the materials of the p-LED unit 105 an optical waveguide mode can span the entire region between the first and second cladding layers 119 , 121 as well as the region between both cladding layers 137 at positions next to the pLED 105 . Due to the refractive indices of the first and second cladding lay- ers 119 , 121 being lower than the refractive index of the waveguide material 109 of the optical waveguide 103 total reflection of the waveguide modes at the first and second cladding layers 119 , 121 or at the region between both cladding layers 137 at positions next to the pLED 105can be achieved . This results in a reduction of signal loss .
According to an embodiment the waveguide material 109 can be an epitaxial semiconductor structure compound or a non- epitaxial conducting and highly refractive oxide composition, for example zinc oxide . The waveguide material can be AlGaAs , InGaAlP or GaN/AlGaN . With these compositions it is important hat the Al amount is substancially higher than it is in the cladding layers .
Alternatively ZnCdSe or InGaSb or TiO2 , ZrO2 compositions are possible .
Alternatively transparent conductive oxides , Indium tin oxides , SnO2 or zinc oxide materials are possible .
Alternatively nonconductive high refractive oxides such as Hafnium oxides , Tantalum oxides TiO2 or ZrO2 materials are possible .
The p-LED unit 105 can be a 35 semiconductor, for example an InGaAl composition .
Depending on the desired color of the p-LED emission signals the p-LED can be fabricated for example based on an InGaAlP composition for red light , an InGaAlAs for infrared light or an InGaAlN for green-blue light .
According to an embodiment the p-LED unit 105 comprises a width w between 300 nm and 10 pm and a thickness t2 between 100 nm and 2 pm . According to an embodiment a vertical thickness tl of the waveguide material 109 of the waveguide 103 is between 100 nm and 3 gm .
According to an embodiment a vertical thickness t3 of the positively doped cladding layer 123 is between 100 nm and 2 gm .
According to an embodiment a vertical thickness of the waveguide structure 101 including the waveguide material 109 of the optical waveguide 103 , the g-LED unit 105 and the positively doped cladding layer 123 is between 0 , 2 gm and 10 gm .
In the shown embodiment the active area 107 of the g-LED unit 105 is positioned in a region 115 with highest optical intensity of the waveguide structure 101 . The region 115 with highest optical intensity of the waveguide 103 and with best optical coupling of the g-LED emission to the waveguide 103 can be determined via simulation and is usually positioned approximately in the center of the waveguide 103 .
According to an embodiment the optical waveguide 103 can be a single mode waveguide and/or a multimode waveguide .
According to an embodiment the waveguide 103 can be a unidirectional waveguide , a bi-directional waveguide or a multidirectional waveguide .
Figure 2 shows a further schematic view of an optoelectronic component 100 according to a further embodiment . Figure 2 shows a sectional view along a transversal direction of the waveguide structure 101 of Fig . 1 .
Fig . 2 shows that the waveguide 103 being covered by the oxide layer 137 . The top electrical contact element 127 covers the top part of the waveguide structure 101 and the bottom electrical contact element 127 covers parts of the first cladding layer 119 . Via the bottom and top electrical contact elements 127 an electrical contact of the p-LED unit 105 can be provided .
In the shown embodiment the side walls 129 of the p-LED unit 105 are provided with an electrical passivation layer 131 .
Figure 3 shows a schematic illustration of method steps of a method for manufacturing of an optoelectronic component 100 according to an embodiment .
According to the shown embodiment in first method step illustrated in graphic a ) the p-LED unit 105 is applied on the first cladding layer 119 by performing a semiconductor growth process . The p-LED unit 105 comprises the negatively doped layer 113 , the active area 107 and the positively doped layer 111 all stacked upon each other .
In the shown embodiment the first cladding layer 119 is positioned on a buf fer layer 135 that is positioned on a substrate 133 .
In graphic a ) the material of the negatively doped layer 113 , the active area 107 and the positively doped layer 111 are provided as layers on top of the first cladding layer 119 .
In a further method step illustrated in graphic b ) an island etching process of the materials of the negatively doped layer 113 , the active area 107 and the positively doped layer 111 is performed to form the p-LED unit 105 . Via the island etching process the predominant trapezoidal shape of the p- LED unit 105 is generated .
The side walls 129 of the p-LED unit 105 are further provided with an electrical passivation layer 131 .
In a further method step illustrated in graphic c ) at least one optical waveguide 103 of the optical waveguide structure 101 is applied on top of the p-LED unit 105 by performing a semiconductor regrowth process or by performing a chemi- cal/physical sputter process .
Further an oxide layer 137 is applied on top of the waveguide material 109 of the optical waveguide 103 . The oxide layer 137 is formed as an electrical current aperture 139 comprising an electric current opening 141 .
Further, a second cladding layer 121 is applied on top of the oxide layer 137 .
Further, an electrical contact element 127 is applied on top of the second cladding layer 121 .
In further method steps illustrated in graphic d) the substrate 133 and the buf fer layer 135 are removed from the first cladding layer 119 .
Further, the first cladding layer 119 is structured and by this partially removed from the optical waveguide 103 .
In addition to this the structured first cladding layer 119 is provided with electrical contact elements 127 .
In addition to this a further oxide layer 137 is applied on the structured first cladding layer 119 .
In the shown embodiment , the first cladding layer 119 is designed as a negatively doped cladding layer whereas the second cladding layer is designed as a positively doped cladding layer .
Figure 4 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
Figure 4 shows another embodiment of the optoelectronic component 100 in the stage of graphic c ) of the method illus- trated in Figure 3 . In the shown embodiment in order to apply the optical waveguide structure 101 comprising at least one optical waveguide 103 and at least one p-LED unit 105 on the first cladding layer 119 at first the waveguide material 109 of the at least one optical waveguide 103 is applied on top of the first cladding layer 119 by ether performing a semiconductor regrowth process or a chemical/physical sputter process of the waveguide material 109 .
In a further method step an etch process on a first surface 159 of the waveguide material 109 is performed and an accommodating space 149 is formed in the waveguide material 109 of the optical waveguide 103 .
In further method steps the p-LED unit 105 including the negatively doped layer 113 , the active area 107 and the positively doped layer 111 are applied into the accommodating space 149 of the waveguide material 109 by performing a semiconductor growth process .
In further method steps the oxide layer 137 in form of the electric current aperture 139 including the electric current opening 141 , the second cladding layer 121 and the electrical contact element 127 are applied on top of the waveguide 103 and the p-LED unit 105 .
In order to finish the embodiment of the optoelectronic component 100 the steps illustrated in graphic d) of figure 3 are performed respectively .
Figure 5 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
In the shown embodiment the p-LED unit 105 is defined via a structuring of the first cladding layer 119 . Instead of performing the island etching process illustrated in graphic b ) of Fig . 3 the waveguide material 109 of the at least one waveguide 103 is directly applied on the layer of materials of the negatively doped layer 113 , the active area 107 and the positively doped layer 111 as provided in the method steps illustrated in graphic a ) of Fig . 3 . In further steps the second cladding layer 121 and the electrical contact elements 127 are applied on the waveguide 103 according to the method steps illustrated in graphic c ) of Fig . 3 .
In order to define the p-LED unit 105 according to the method steps illustrated in graphic d) of Fig . 3 the substrate 133 and the buf fer layer 135 are removed from the first cladding layer 119 . Further the first cladding layer 119 is structured by partially removing the first cladding layer 119 from the negatively doped layer 113 and generating a structure 143 of removed first cladding layer 119 . Further electrical contact elements 127 are applied on the structured first cladding layer 119 .
Through the structuring of the first cladding layer the definition of the p-LED unit 105 is achieved . In the structured area of the first cladding layer 119 the electrical connectivity through the negatively doped layer 113 , the active area 107 and the positively doped layer 111 is very poor, such that an electric connectivity is only achieved through said layers in the area of the first cladding layer 119 , where the electrical conductivity is suf ficient . As a result , the p-LED unit 105 is confined to the area of the first cladding layer 119 and multiple p-LED units 105 are separated by the structured areas 143 of the first cladding 119 .
Figure 6 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
In the shown embodiment the p-LED unit 105 is integrated into a uni-directional waveguide 103 . The p-LED unit 105 is positioned at a dead end of the uni-directional waveguide 103 . In the shown embodiment the optoelectronic component 100 is designed as a photonic integrated circuit and the waveguide structure 101 including the uni-directional waveguide 103 and the integrated p-LED unit 105 is formed on a photonic integrated circuit chip 151 .
According to an embodiment the second cladding layer 121 is a transparent conductive oxide TCO .
Further, according to an embodiment the p-side cladding layer 122 it is an indium tin oxide , which is transparent and conductive and of fers a suitable refractive index between 1 . 96 and 1 . 76 in a visible range .
According to an embodiment the negatively doped cladding layer 125 is a Al InGaN or a InGaAlP composition .
Figure 7 shows schematic views of waveguides 103 of an optoelectronic component 100 according to di f ferent embodiments .
In the embodiment shown in graphic a ) the p-LED unit 105 is integrated into a bi-directional waveguide 103 . The bidirectional waveguide 103 is designed as a single mode waveguide that provides a single transmission of only a single wave mode 145 of the light signals of the p-LED unit 105 .
In the embodiment in graphic b ) the bi-directional waveguide 103 is designed as a multi-mode waveguide allowing a single transmission of multiple wave modes 145 of the light signals of the p-LED unit 105 .
According to the embodiment of graphic c ) the p-LED unit 105 can be integrated into a bi-directional waveguide 103 allowing for a bi-directional signal transmission .
In the embodiment of graphic d) the p-LED unit 105 is integrated into a uni-directional waveguide 103 allowing for a uni-directional signal transmission . In the embodiment of graphic e ) the p-LED unit 105 is integrated into a multi-directional waveguide 103 allowing for a multi-directional signal transmission .
Figure 8 shows further schematic views of waveguides 103 of an optoelectronic component 100 according to further embodiments .
In the embodiments of graphics a ) and b ) the p-LED unit 105 is integrated into a uni-directional waveguide 103 . A dead end of the uni-directional waveguide 103 is provided with a reflective surface 117 . The reflective surface 117 can be formed as a metal reflector as illustrated in graphic a ) or as a dielectric stack reflector or as photonic crystal Bragg mirror as illustrated in graphic b ) .
Figure 9 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
According to the shown embodiment the optoelectronic component 100 comprises a waveguide structure 101 comprising multiple waveguides 103 with each waveguide 103 comprising multiple p-LED units 105 according to the above-mentioned embodiments . Via a connection area 153 the photonic integrated circuit chip 151 can be connected to further light transmitting components .
The waveguides 103 can be coupled to each other via grating or via multimode interference coupler structures or via evanescent coupling .
Figure 10 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
In graphics a ) and b ) the p-LED unit 105 according to the above-mentioned embodiments is integrated into a bidirectional waveguide 103 and a multi-directional waveguide 103 , respectively . In both embodiments the bi-directional waveguide 103 and the multi-directional waveguide 103 is connected to a further waveguide 107 via edge coupling 155 .
Figure 11 shows a further schematic view of an optoelectronic component 100 according to a further embodiment .
In the shown embodiment the p-LED unit 105 according to the above-mentioned embodiments is integrated into a unidirectional or bi-directional waveguide 103 . The uni- directional or bi-directional waveguide 103 is coupled to a further waveguide 147 via an evanescent coupling 157 .
List of reference signs
100 optoelectronic component
101 waveguide structure
103 optical waveguide
105 p-LED unit
107 active area
109 waveguide material
111 positively doped layer
113 negatively doped layer
115 region with highest optical intensity
117 reflective surface
119 first cladding layer
121 second cladding layer
123 positively doped cladding layer
125 negatively doped cladding layer
127 electrical contact element
129 sidewall of the active area
131 electrical passivation layer
133 substrate
135 buf fer layer
137 oxide layer
139 electric current aperture
141 electric current opening
143 structure
145 wave mode
147 further waveguide
149 accommodation space
151 photonic integrated circuit chip
153 connection area
155 etch coupling
157 evanescens coupling
159 first surface w hori zontal width of the p-LED unit t vertical thickness of the waveguide structure tl vertical thickness of the waveguide material t2 vertical thickness of the p-LED unit t3 vertical thickness of the positive cladding layer

Claims

claims
1. Optoelectronic component (100) , especially a photonic integrated circuit, comprising an optical waveguide structure (101) with at least one optical waveguide (103) and at least one p-LED unit (105) with an active area (107) , wherein the active area (107) of the p-LED unit (105) is integrated monolithically into the at least one optical waveguide (103) , and wherein the active area (107) of the p-LED unit (105) is at least partially covered by a waveguide material (109) of the at least one optical waveguide (103) .
2. Optoelectronic component (100) of claim 1, wherein the active area (107) of the p-LED unit (105) protrudes into the waveguide material (109) of the waveguide (103) .
3. Optoelectronic component (100) of claim 1 or 2, wherein the active area (107) is positioned between a positively doped layer (111) and a negatively doped layer (113) of the p-LED unit (105) , and wherein a material of the active area (107) has a refractive index deviating from a refractive index of the waveguide material (109) of the waveguide (103) by a maximum of 0.7, more advantageously by a maximum of 0.5, most advantageously by a maximum of 0.1.
4. Optoelectronic component (100) of any of the previous claims, wherein the active area (107) of the p-LED unit (105) is positioned in a region (115) of the waveguide structure (101) with highest optical intensity of an optical mode of the waveguide structure (101) .
5. Optoelectronic component (100) of any of the previous claims, wherein the at least one waveguide (103) is a single mode waveguide and/or a multi-mode waveguide. 6. Optoelectronic component (100) of any of the previous claims, wherein the at least one waveguide (103) is a uni-directional waveguide.
7. Optoelectronic component (100) of claim 6, wherein one end of the uni-directional waveguide (103) is provided with a reflective surface (117) .
8. Optoelectronic component (100) of any of the previous claims, wherein the at least one waveguide (103) is a bidirectional waveguide or a multi-directional waveguide.
9. Optoelectronic component (100) of any of the previous claims, wherein the waveguide structure (101) comprises a first cladding layer (119) and a second cladding layer (121) , and wherein the at least one waveguide (103) and the active area (107) of the p-LED unit (105) are positioned between the first and second cladding layers (119, 121) .
10. Optoelectronic component (100) of claim 9, wherein the first and second cladding layers (119, 121) comprise a positively doped cladding layer (123) and a negatively doped cladding layer (125) .
11. Optoelectronic component (100) of claim 9 or 10, wherein materials of the first and second cladding layers (119, 121) have a refractive index lower than the material of the waveguide (103) .
12. Optoelectronic component (100) of any of the claims 9 to 11, wherein the first and second cladding layers (119, 121) are provided with electrical contact elements (127) , respectively .
13. Optoelectronic component (100) of any of the previous claims, wherein the p-LED unit (105) has a shape with op- timized side emission and suppressed top emission of LED signals .
14. Optoelectronic component (100) of any of the previous claims, wherein at least one sidewall (129) of the active area (107) stacked between the positively doped layer (111) and the negatively doped layer (113) is provide with an electrical passivation layer (131) .
15. Method of manufacturing an optoelectronic component
(100) , especially a photonic integrated circuit, according to of any of the previous claims 1 to 14, comprising:
- Providing a first cladding layer (119) provided on a substrate ( 133 ) ;
- Applying an optical waveguide structure (101) comprising at least one optical waveguide (103) and at least one p-LED unit (105) on the first cladding layer (119) , wherein an active area (107) of the p-LED unit (105) is integrated monolithically into the at least one optical waveguide (103) , and wherein the active layer of the p- LED unit (105) is at least partially covered by a waveguide material (109) of the at least one optical waveguide (103) ;
- Applying a second cladding layer (121) on the optical waveguide structure (101) .
16. Method of claim 15, wherein the applying of the optical waveguide structure (101) comprises:
Applying the p-LED unit (105) on the first cladding layer (119) by performing a semiconductor growth process;
Applying the at least one optical waveguide (103) on top of the active area (107) of the p-LED unit (105) by performing a semiconductor regrowth process or by performing a chemical/physical deposition process.
17. Method of claim 15 or 16, wherein the applying of the p- LED unit (105) comprises: Performing an island etching process of the p-LED unit (105) .
18. Method of claim 15, 16 or 17, wherein the applying of the p-LED unit (105) comprises:
Applying a layer of a material of the p-LED unit (105) including material of a positively doped layer (111) , a material of a negatively doped layer (113) and a material of the active area (107) on the first cladding; and Performing a structuring process of the first cladding layer (119) , wherein through the structuring of the first cladding layer (119) the layer of the active area (107) is structured into at least one p-LED unit (105) .
19. Method of claim 15, wherein the applying of the optical waveguide structure (101) comprises:
Applying the at least one optical waveguide (103) on top of the first cladding layer (119) by performing a semiconductor regrowth process or a chemical/physical sputter process of a waveguide material (109) ;
Performing an etch process on a first surface (159) of the waveguide material (109) and forming an accommodating space (149) in the waveguide material (109) ; and Applying the active area (107) of the p-LED unit (105) into the accommodating space (149) of the waveguide material (109) by performing a semiconductor growth process.
20. Method of any of the previous claims 15 to 19, wherein the applying of the p-LED unit (105) comprises:
Applying an electrical passivation layer (131) on at least one sidewall (129) of the p-LED unit (105) .
PCT/EP2024/067676 2023-06-28 2024-06-24 Optoelectronic component and method of manufacturing an optoelectronic component WO2025003072A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163631A (en) * 1997-06-20 2000-12-19 Sharp Kabushiki Kaisha Waveguide type optical integrated circuit element and method for fabricating same
US20120219250A1 (en) * 2010-08-26 2012-08-30 The Board Of Trustees Of The Leland Stanford Junior University Integration of optoelectronics with waveguides using interposer layer
US20210356662A1 (en) * 2020-05-18 2021-11-18 Robert Kalman Embedding leds with waveguides
US20230197695A1 (en) * 2020-03-18 2023-06-22 Avicenatech Corp. Led array for in-plane optical interconnects

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163631A (en) * 1997-06-20 2000-12-19 Sharp Kabushiki Kaisha Waveguide type optical integrated circuit element and method for fabricating same
US20120219250A1 (en) * 2010-08-26 2012-08-30 The Board Of Trustees Of The Leland Stanford Junior University Integration of optoelectronics with waveguides using interposer layer
US20230197695A1 (en) * 2020-03-18 2023-06-22 Avicenatech Corp. Led array for in-plane optical interconnects
US20210356662A1 (en) * 2020-05-18 2021-11-18 Robert Kalman Embedding leds with waveguides

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