WO2024255602A1 - Photosensitive developing resin having imide structure, preparation method therefor, and use thereof - Google Patents

Abstract

The present invention belongs to the technical field of high polymer materials, and particularly relates to a photosensitive developing resin having an imide structure, a preparation method therefor and the use thereof. Said photosensitive developing resin comprises the following raw materials in parts by weight: 2-6 parts of a polyamine, 6-20 parts of a dicarboxylic anhydride, 1-6 parts of an unsaturated monobasic acid, 0.02-0.08 part of a polymerization inhibitor, 0.02-0.08 part of a catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of a saturated sodium bicarbonate solution, 1-5 parts of diethyl ether, 3-10 parts of formic acid, 50-70 parts of N-methyl pyrrolidone and 2-8 parts of anhydrous zinc acetate. The present invention comprises first reacting the polyamine with an alicyclic anhydride having a double bond to generate a polyimide structure of which a terminal group has a double bond, then performing epoxidation transformation on the double bond, performing ring-opening esterification using the unsaturated monobasic acid, and then performing modification with an anhydride to introduce carboxyl, so as to finally obtain the photosensitive developing resin having the imide structure. The resin has the advantages of excellent electrical properties, heat resistance, good dimensional stability, excellent adhesion property and a low dielectric constant, and is suitable for preparing IC carrier inks, solder resist inks for printed circuit boards, or chip photoresists.

Description

Imide structure photosensitive developing resin and preparation method and application thereof Technical Field

The invention belongs to the technical field of polymer materials, and in particular relates to an imide structure photosensitive developing resin and a preparation method and application thereof.

Background Art

IC substrate technology originated in Japan in the 1980s and has a history of more than 30 years. In the early days, it coexisted with IC integrated packaging technology. Currently, most high-end ICs have adopted substrate packaging technology as a precision connection device between the core chip and the conventional printed circuit board (PCB). IC substrates are made of copper-clad laminates through processes such as photolithography, solder mask photosensitive development, and gold plating, which are different from traditional copper plates in PCBs in several aspects. First, the substrate used for copper-clad laminates of IC substrates is different from the epoxy/glass fiber composite material of traditional copper-clad laminates. It mainly uses BT resin, ABF insulating film (Ajinomoto Build-up Film of Ajinomoto Company), and MIS polymer as the substrate of copper-clad laminates (films). These three types of substrate materials are monopolized by foreign companies and often become the bottleneck of chip manufacturing. Second, the production of IC substrates starts with special copper-clad laminates (films), and the line etching and solder mask photosensitive development processes required require more sophisticated technical requirements than conventional PCB production, that is, the etching and solder mask development resolutions are higher, and the line width is usually controlled within tens of microns. Third, as a permanent fine protective thin layer material, solder resist photosensitive developing ink is required to have strict heat resistance, thermal expansion resistance, hardness, scratch resistance, and impact resistance on the IC substrate. Some applications even require the solder resist layer to have a lower dielectric constant to meet the requirements of high-frequency communication. Fourth, most of the IC substrate back-end processing uses chemical gold plating (industrial abbreviation chemical gold) rather than electroplating. Chemical gold solutions generally have strong acidity or alkalinity, which requires the IC substrate solder resist layer to have a high resistance to chemical gold (i.e. corrosion resistance) to avoid defects such as discoloration, denaturation, and easy peeling of the solder resist layer. Therefore, compared with traditional PCB solder resist inks, IC substrate solder resist inks have more stringent requirements on development resolution, development quality, thermal expansion resistance, and chemical gold resistance. The technical key to IC substrate solder resist inks lies in the photosensitive developing main resin and the photoinitiator system. Therefore, it is necessary to improve the relevant performance indicators of the photosensitive developing main resin to meet the requirements of the IC substrate.

Summary of the invention

The first object of the present invention is to provide an imide structure photosensitive developing resin, the second object of the present invention is to provide a method for preparing the photosensitive developing resin, and the third object of the present invention is to provide an application of the photosensitive developing resin.

According to the first aspect of the present invention, an imide structure photosensitive developing resin is provided, wherein the raw materials thereof include, by weight: 2-6 parts of a polyamine, 6-20 parts of a dicarboxylic acid anhydride, 1-6 parts of an unsaturated monobasic acid, 0.02-0.08 parts of an inhibitor, 0.02-0.08 parts of a catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of a saturated sodium bicarbonate solution, 1-5 parts of ether, 3-10 parts of formic acid, 50-70 parts of N-methylpyrrolidone, and anhydrous acetic acid. Zinc 2-8 parts.

In some embodiments, the polyamine is selected from one or more of 4,4'-diaminodicyclohexylmethane, 1,4-cyclohexanedimethylamine, 1,3-cyclohexanedimethylamine, 4,4'-(p-dimethylamino)diphenylmethane, isophorone diamine, 1,8-octanediamine, polyoxyethylene diamine, and 2,4,6-triaminopyrimidine. The toughness and film-forming properties of the imide structure photosensitive developing resin derived from the chain polyamine can be improved; the imide structure photosensitive developing resin derived from the alicyclic polyamine is more rigid and tough, and has a better balance of properties; the imide structure photosensitive developing resin derived from the aromatic polyamine is more rigid, brittle, and has unsatisfactory solubility and film-forming properties. Therefore, it is generally necessary to match the three to offset and balance the performance.

In some embodiments, the dicarboxylic acid anhydride is selected from one or more of tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride.

In some embodiments, the unsaturated monoacid is selected from one or more of acrylic acid, methacrylic acid, and crotonic acid.

In some embodiments, the polymerization inhibitor is selected from at least one of hydroquinone, p-tert-butylcatechol, and catechol.

In some embodiments, the catalyst is selected from one or more of benzyltriethylammonium chloride, benzyldiamine, triethylamine, diethylamine, and triphenylphosphine.

According to a second aspect of the present invention, there is provided a method for preparing the above-mentioned imide structure photosensitive developing resin, comprising the following steps:

S1. Mix 40-60% of the total amount of dicarboxylic acid anhydride, polyamine, anhydrous zinc acetate, 20-30% of the total amount of polymerization inhibitor and N-methylpyrrolidone, heat to 70-80° C. and stir for 0.5-2h in a nitrogen atmosphere, then heat to 140-160° C. and continue stirring for 15-18 hours. After the reaction is completed, cool the reaction solution to 20-35° C., filter and wash with anhydrous ethanol, dry and grind the product to obtain a bismaleimide solid powder;

S2, mixing the bismaleimide solid powder obtained in step S1 with formic acid, stirring at 50-60° C. for 1-3 h, then adding hydrogen peroxide, and continuing the reaction for 3-5 h. After the reaction is completed, adding saturated sodium bicarbonate solution and diethyl ether to the reaction product, shaking evenly and standing to separate, separating the organic layer, washing the organic layer with water for 2-3 times, then removing the diethyl ether by rotary evaporation, adding anhydrous magnesium sulfate to dry overnight, and then filtering to remove the magnesium sulfate to obtain the product;

S3, mixing the product obtained in step S2 with the remaining inhibitor and catalyst, heating the system to 90-100°C, then adding unsaturated monoacid, heating to 110-120°C after addition, and continuing to react for 2-3h, after the reaction is completed, lowering the temperature of the reaction system to 70-90°C, adding the remaining dicarboxylic acid anhydride, and reacting for 6-8h to obtain.

In step S1, anhydrous zinc acetate is used to adsorb water generated in the reaction, and N-methylpyrrolidone is used as a solvent.

In step S1, a staged heating method is adopted, the purpose is to first heat all the reaction raw materials at a lower temperature. Mix evenly at 70-80℃ to avoid local explosion in the subsequent high temperature (140-160℃) reaction.

In step S2, the role of formic acid is mainly to provide a weak acid environment to enhance the oxidizing property of hydrogen peroxide.

In step S2, the role of diethyl ether is to provide an organic phase in the extraction.

In step S3, the main reaction raw materials are mixed evenly with the inhibitor and the catalyst, and then the temperature is raised to 90-100° C. At this time, the unsaturated monoacid is added, which is not easy to self-polymerize. After stirring evenly, the temperature is raised to 110-120° C. to further prevent the unsaturated monoacid from exploding.

The present invention introduces an imide structure into a photosensitive developing main resin, and continues to graft on the basis of the generated polyimide to increase the functionality of the resin. The present invention first reacts a polyamine with an alicyclic anhydride with a double bond to generate a polyimide structure with a double bond at the end group, then performs epoxidation conversion on the double bond, then performs ring-opening esterification with an unsaturated monobasic acid, and then performs an acid anhydride modification to introduce a carboxyl group, and finally obtains a photosensitive developing resin with an imide structure. The resin has the advantages of excellent electrical properties, heat resistance, good dimensional stability, excellent adhesion, and a relatively low dielectric constant.

When the dicarboxylic acid anhydride is tetrahydrophthalic anhydride, the polyamine is 1,3-cyclohexanedimethylamine, and the unsaturated monoacid is acrylic acid, the schematic diagram of the synthesis route of the present invention is shown in FIG1 .

In some embodiments, in step S1, the product is dried in a vacuum oven at 50° C. for 4-6 hours and ground to obtain a bismaleimide solid powder.

In some embodiments, in step S2, hydrogen peroxide needs to be slowly added dropwise, and the adding time is controlled within 2-4 hours.

In some embodiments, the stirring speed is 600-800 rpm.

According to a third aspect of the present invention, there is provided a use of the above-mentioned imide structure photosensitive developing resin in the preparation of an IC substrate solder resist ink, a printed circuit board solder resist ink or a chip photoresist.

According to a fourth aspect of the present invention, there is provided a dry film obtained by photocuring or thermally curing the above-mentioned imide structure photosensitive developing resin.

In some embodiments, the imide structure photosensitive developing resin is printed on a carrier and baked at 70-80° C. for 20-30 minutes to obtain a dry film.

According to a fifth aspect of the present invention, there is provided a use of the above-mentioned dry film in the preparation of an IC substrate or a printed circuit board.

The beneficial effects of the present invention include:

The imide structure photosensitive developing resin of the present invention has a low molecular weight. The low molecular weight polyimide structure oligomer can make the cured film obtained after the resin is cured have a higher glass transition temperature and lower thermal expansion performance. At the same time, due to the large amount of imide structures present, after double bond cross-linking and curing, it becomes a polyimide cured film, so it has excellent heat resistance, thermal expansion resistance, and dimensional stability, and can meet the stringent requirements of IC substrate solder mask ink on line width accuracy and thermal deformation resistance.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic diagram of the synthesis route of Example 1 of the present invention.

DETAILED DESCRIPTION

The present invention is further described in detail below. It is worth noting that the following examples are only for better explanation of the present invention and are not intended to limit the scope of the present invention. The undisclosed process steps in the examples are prior art. Unless otherwise specified, the following raw materials are commercially available.

In the following examples, the stirring speed is 600 rpm.

Example 1

The method for preparing the imide structure photosensitive developing resin of this embodiment comprises the following steps:

(1) 50.00 g of tetrahydrophthalic anhydride, 46.74 g of 1,3-cyclohexanedimethylamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 ° C in a nitrogen atmosphere and stirred for half an hour, then heated to 150 ° C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered and washed with anhydrous ethanol three times. The product was dried in a vacuum oven at 50 ° C for 4 hours and ground to obtain a bismaleimide solid powder.

(2) Add 29.35 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50° C. for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let stand to separate, separate the organic layer and then wash the organic layer three times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

(3) Add 31.32 g of the dried product obtained in step (2) into another three-necked flask, then add 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride, heat the system to 90° C., then drop 28.53 g of acrylic acid into the three-necked flask, and after the dropwise addition is complete, heat the system to 110° C. and continue to react for 2.5 h. After the reaction is complete, lower the temperature of the reaction system to 80° C., add 60.23 g of tetrahydrophthalic anhydride, and react for 6 h to obtain the product.

Example 2

The method for preparing the imide structure photosensitive developing resin of this embodiment comprises the following steps:

(1) 50.00 g of tetrahydrophthalic anhydride, 46.23 g of 1,8-octanediamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 ° C in a nitrogen atmosphere and stirred for half an hour, then heated to 150 ° C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered and washed with anhydrous ethanol three times. The product was dried in a vacuum oven at 50 ° C for 4 hours and ground to obtain a bismaleimide solid powder.

(2) Add 29.35 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid was stirred at 50 ° C for 2 h, and then 48.89 g of hydrogen peroxide was slowly added dropwise for about 3 h. After the addition was completed, the reaction was continued for 5 h. After the reaction was completed, the reaction product was poured into a separatory funnel, and then 50 g of saturated sodium bicarbonate solution and 25 g of ether were added. After shaking evenly, the mixture was allowed to stand for stratification. After separating the organic layer, the organic layer was washed 3 times with distilled water. The washed product was then poured into a beaker, the ether was removed by rotary evaporation, and then 30 g of anhydrous magnesium sulfate was added and dried overnight. After that, the magnesium sulfate was removed by filtration to obtain a dry product.

(3) Add 31.32 g of the dried product obtained in step (2) into another three-necked flask, then add 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride, heat the system to 90° C., then drop 28.53 g of acrylic acid into the three-necked flask, and after the dropwise addition is complete, heat the system to 110° C. and continue the reaction for 2.5 h. After the reaction is complete, lower the temperature of the reaction system to 80° C., add 60.23 g of tetrahydrophthalic anhydride, and react for 6 h to obtain the product.

Example 3

The method for preparing the imide structure photosensitive developing resin of this embodiment comprises the following steps:

(1) 50.00 g of tetrahydrophthalic anhydride, 41.23 g of polyoxyethylene diamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 ° C in a nitrogen atmosphere and stirred for half an hour, then heated to 150 ° C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50 ° C for 4 hours and ground to obtain a bismaleimide solid powder.

(2) Add 27.74 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50° C. for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let stand to separate, separate the organic layer and then wash the organic layer three times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

(3) Add 31.32 g of the dried product obtained in step (2) into another three-necked flask, then add 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride, heat the system to 90° C., then drop 28.53 g of acrylic acid into the three-necked flask, and after the dropwise addition is complete, heat the system to 110° C. and continue the reaction for 2.5 h. After the reaction is complete, lower the temperature of the reaction system to 80° C., add 60.23 g of tetrahydrophthalic anhydride, and react for 6 h to obtain the product.

Example 4

The method for preparing the imide structure photosensitive developing resin of this embodiment comprises the following steps:

(1) 50.00 g of tetrahydrophthalic anhydride, 23.37 g of 1,3-cyclohexanedimethylamine, 20.62 g of polyoxyethylene diamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone and 1.00 L of N-methylpyrrolidone were placed in a nitrogen inlet. The mixture was placed in a 3L round-bottom four-necked flask with a thermometer and heated to 80°C in a nitrogen atmosphere and stirred for half an hour, then heated to 150°C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered and washed twice with anhydrous ethanol, and the product was dried in a vacuum oven at 50°C for 4 hours and ground to obtain a bismaleimide solid powder.

(2) Add 28.79 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50° C. for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let stand to separate, separate the organic layer and then wash the organic layer three times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

(3) Add 31.32 g of the dried product obtained in step (2) into another three-necked flask, then add 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride, heat the system to 90° C., then drop 28.53 g of acrylic acid into the three-necked flask, and after the dropwise addition is complete, heat the system to 110° C. and continue the reaction for 2.5 h. After the reaction is complete, lower the temperature of the reaction system to 80° C., add 60.23 g of tetrahydrophthalic anhydride, and react for 6 h to obtain the product.

Example 5

The method for preparing the imide structure photosensitive developing resin of this embodiment comprises the following steps:

(1) 50.00 g of tetrahydrophthalic anhydride, 23.37 g of 1,3-cyclohexanedimethylamine, 23.12 g of 1,8-octanediamine, 60.30 g of anhydrous zinc acetate, 0.16 g of hydroquinone and 1.00 L of N-methylpyrrolidone were placed in a 3 L round-bottom four-necked flask equipped with a nitrogen inlet and a thermometer. The mixture was heated to 80 ° C in a nitrogen atmosphere and stirred for half an hour, then heated to 150 ° C and stirred for 16 hours. After the reaction was completed, the reaction solution was cooled to room temperature, filtered and washed twice with anhydrous ethanol. The product was dried in a vacuum oven at 50 ° C for 4 hours and ground to obtain a bismaleimide solid powder.

(2) Add 29.78 g of the bismaleimide solid powder obtained in step (1) and 75.85 g of formic acid into a three-necked flask, stir at 50° C. for 2 h, then slowly add 48.89 g of hydrogen peroxide dropwise for about 3 h. After the addition is complete, continue the reaction for 5 h. After the reaction is complete, pour the reaction product into a separatory funnel, then add 50 g of a saturated sodium bicarbonate solution and 25 g of ether, shake evenly and let stand to separate, separate the organic layer and then wash the organic layer three times with distilled water, then pour the washed product into a beaker, remove the ether by rotary evaporation, then add 30 g of anhydrous magnesium sulfate and dry overnight, then filter to remove the magnesium sulfate to obtain a dry product.

(3) Add 31.32 g of the dried product obtained in step (2) into another three-necked flask, then add 0.48 g of hydroquinone and 0.32 g of benzyltriethylammonium chloride, heat the system to 90° C., then drop 28.53 g of acrylic acid into the three-necked flask, and after the dropwise addition is complete, heat the system to 110° C. and continue the reaction for 2.5 h. After the reaction is complete, lower the temperature of the reaction system to 80° C., add 60.23 g of tetrahydrophthalic anhydride, and react for 6 h to obtain the product.

Next, the performance of the imide structure photosensitive developing resin prepared in Examples 1-5 was tested, and the testing method was as follows:

(1) Photosensitivity: The imide structure photosensitive developing resin is printed on the copper clad laminate, baked at 75°C for 20 minutes, a 21-level light gradient ruler is placed on the film layer, and exposed and developed under an exposure machine with an LED light source. The time when 7 grids remain on the film layer is used as the standard.

(2) Minimum line spacing and line width: Tested in accordance with the method of GB/T 29846-2013 Photo-imaging electroplating resists for printed circuit boards.

(3) Etching resistance: The etching resistance is tested according to the method of GB/T 29846-2013 for photo-imaging electroplating resists for printed circuit boards. After etching, the pattern is visually intact, the line edges are neat, and there is no wrinkling, shedding or dog-tooth shape. The excellent one is wrinkled but not shedding. The good one is shedding. The poor one is shedding.

(4) Anti-plating property: Anti-plating property was tested according to the method of photo-imaging anti-plating resist for printed circuit board in GB/T 29846-2013. The image after electroplating was visually inspected to be free of plating seepage, bubbles and shedding, which was considered excellent. The image after plating was considered good with plating seepage but no shedding, which was considered poor.

(5) Film fading property: The test specimens were placed in a 50°C, 3 wt% NaOH aqueous solution and the film fading performance was observed. The film fading performance was evaluated as excellent if it completely shed within 60 seconds without any residue, good if it completely shed within 60-120 seconds without any residue, and poor if it shed after 120 seconds without any residue.

The test results are shown in Table 1.

Table 1 Performance test results of imide structure photosensitive developing resins of Examples 1-5

As can be seen from Table 1, the imide structure photosensitive developing resin of the present invention has excellent properties such as photosensitivity, etching resistance, electroplating resistance, and film-fading resistance, and is suitable for use in preparing IC substrates.

The above embodiments are preferred implementation modes of the present invention, but the implementation modes of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be equivalent replacement methods and are included in the protection scope of the present invention.

Claims (10)

The imide structure photosensitive developing resin is characterized in that, in parts by weight, its raw material composition includes: 2-6 parts of polyamine, 6-20 parts of dicarboxylic acid anhydride, 1-6 parts of unsaturated monoacid, 0.02-0.08 parts of inhibitor, 0.02-0.08 parts of catalyst, 2-10 parts of hydrogen peroxide, 2-6 parts of saturated sodium bicarbonate solution, 1-5 parts of ether, 3-10 parts of formic acid, 50-70 parts of N-methylpyrrolidone, and 2-8 parts of anhydrous zinc acetate. The imide structure photosensitive developing resin according to claim 1, characterized in that the polyamine is selected from one or more of 4,4'-diaminodicyclohexylmethane, 1,4-cyclohexanedimethylamine, 1,3-cyclohexanedimethylamine, 4,4'-(p-dimethylamino)diphenylmethane, isophoronediamine, 1,8-octanediamine, polyoxyethylenediamine, and 2,4,6-triaminopyrimidine. The imide structure photosensitive developing resin according to claim 1 or 2 is characterized in that the dicarboxylic acid anhydride is selected from one or more of tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and methyltetrahydrophthalic anhydride; and the unsaturated monobasic acid is selected from one or more of acrylic acid, methacrylic acid, and crotonic acid. The imide structure photosensitive developing resin according to claim 1 or 2, characterized in that the inhibitor is selected from at least one of hydroquinone, p-tert-butylcatechol, and catechol; and the catalyst is selected from one or more of benzyltriethylammonium chloride, benzyldiamine, triethylamine, diethylamine, and triphenylphosphine. The method for preparing the imide structure photosensitive developing resin according to any one of claims 1 to 4, characterized in that it comprises the following steps: S1. Mix 40-60% of the total amount of dicarboxylic acid anhydride, polyamine, anhydrous zinc acetate, 20-30% of the total amount of polymerization inhibitor and N-methylpyrrolidone, heat to 70-80° C. and stir for 0.5-2h in a nitrogen atmosphere, then heat to 140-160° C. and continue stirring for 15-18 hours. After the reaction is completed, cool the reaction solution to 20-35° C., filter and wash with anhydrous ethanol, dry and grind the product to obtain a bismaleimide solid powder; S2, mixing the bismaleimide solid powder obtained in step S1 with formic acid, stirring at 50-60° C. for 1-3 h, then adding hydrogen peroxide, and continuing the reaction for 3-5 h. After the reaction is completed, adding saturated sodium bicarbonate solution and diethyl ether to the reaction product, shaking evenly and standing to separate, separating the organic layer, washing the organic layer with water for 2-3 times, then removing the diethyl ether by rotary evaporation, adding anhydrous magnesium sulfate to dry overnight, and then filtering to remove the magnesium sulfate to obtain the product; S3, the product obtained in step S2 is mixed with the remaining inhibitor and catalyst, the system is heated to 90-100°C, and then the unsaturated monobasic acid is added, and the temperature is raised to 110-120°C after the addition, and the reaction is continued for 2-3 hours, After the reaction is completed, the temperature of the reaction system is lowered to 70-90°C, and the remaining dicarboxylic acid anhydride is added and reacted for 6-8 hours to obtain the product. The method for preparing an imide structure photosensitive developing resin according to claim 5, characterized in that in step S2, hydrogen peroxide needs to be slowly added dropwise, and the adding time is controlled within 2-4 hours. The method for preparing an imide structure photosensitive developing resin according to claim 5 or 6, characterized in that the stirring speed is 600-800 rpm. Use of the imide structure photosensitive developing resin according to any one of claims 1 to 4 in the preparation of IC substrate solder resist ink, printed circuit board solder resist ink or chip photoresist. A dry film, characterized in that it is obtained by photocuring or thermally curing the imide structure photosensitive developing resin according to any one of claims 1 to 4. Use of the dry film according to claim 9 in the preparation of IC substrates or printed circuit boards.