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WO2024247730A1 - Procédé de stockage de fluorure de phosphore, récipient de stockage et récipient de stockage chargé de gaz - Google Patents

Procédé de stockage de fluorure de phosphore, récipient de stockage et récipient de stockage chargé de gaz Download PDF

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Publication number
WO2024247730A1
WO2024247730A1 PCT/JP2024/018017 JP2024018017W WO2024247730A1 WO 2024247730 A1 WO2024247730 A1 WO 2024247730A1 JP 2024018017 W JP2024018017 W JP 2024018017W WO 2024247730 A1 WO2024247730 A1 WO 2024247730A1
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Prior art keywords
storage container
phosphorus
phosphorus fluoride
gas
fluoride
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PCT/JP2024/018017
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English (en)
Japanese (ja)
Inventor
淳 鈴木
淳平 岩崎
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株式会社レゾナック
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Publication of WO2024247730A1 publication Critical patent/WO2024247730A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present invention relates to a method for storing phosphorus fluoride, which is at least one of phosphorus trifluoride (PF 3 ), phosphorus pentafluoride (PF 5 ), and diphosphorus tetrafluoride (P 2 F 4 ), a storage container, and a gas-filled storage container.
  • phosphorus fluoride which is at least one of phosphorus trifluoride (PF 3 ), phosphorus pentafluoride (PF 5 ), and diphosphorus tetrafluoride (P 2 F 4 )
  • PF 3 phosphorus trifluoride
  • PF 5 phosphorus pentafluoride
  • P 2 F 4 diphosphorus tetrafluoride
  • Phosphorus fluorides such as phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride, and fluorine-containing gases such as chlorine trifluoride (ClF 3 ) and iodine heptafluoride (IF 7 ) are used as dry etching gases for semiconductor manufacturing.
  • the dry etching gas is required to have a high purity (for example, 99.9% by volume or more).
  • the dry etching gas is stored in a filled state in a storage container, it is necessary to maintain the high purity in the storage container for a long period of time.
  • metal impurities that may cause particle generation during dry etching must be suppressed to a concentration of 1 mass ppm or less.
  • Patent Document 1 discloses a technology in which the inner surface of a storage container that stores fluorine-containing gas is fluorinated to suppress reaction between the fluorine-containing gas and the metal material that forms the storage container.
  • the storage container is filled with fluorine-containing gas after a fluorination treatment that causes a reaction between the metal material that forms the inner surface of the storage container and the fluorine-containing gas has been carried out in advance, so that reaction between the metal material that forms the storage container and the filled fluorine-containing gas is unlikely to occur, and the generation of metal impurities is suppressed.
  • a decrease in the purity of the filled fluorine-containing gas is suppressed for a long period of time.
  • An object of the present invention is to provide a method for storing phosphorus fluoride, a storage container, and a gas-filled storage container in which an increase in the concentration of metal impurities is unlikely to occur.
  • a method for storing phosphorus fluoride which is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride, comprising: storing the phosphorus fluoride in a storage container having a portion that comes into contact with the phosphorus fluoride made of a metal material; A method for storing phosphorus fluoride, wherein the total concentration of copper, magnesium, calcium, and palladium contained in the metal material is 0.8 mass % or less.
  • [2] The method for storing phosphorus fluoride according to [1], wherein the metal material is at least one of manganese steel and chromium molybdenum steel.
  • [3] The method for storing phosphorus fluoride according to [1] or [2], wherein the concentrations of copper, magnesium, calcium, and palladium contained in the metal material are measured by X-ray photoelectron spectroscopy.
  • [4] The method for storing phosphorus fluoride according to any one of [1] to [3], wherein the phosphorus fluoride is stored in the storage container with a purity of 99.90% by volume or more.
  • a storage container for storing phosphorus fluoride which is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride
  • the metal material is at least one of manganese steel and chromium molybdenum steel.
  • the concentration of metal impurities in the phosphorus fluoride is unlikely to increase.
  • the method for storing phosphorus fluoride is a method for storing phosphorus fluoride, which is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride, in which the phosphorus fluoride is stored in a storage container in which the portion that the phosphorus fluoride comes into contact with is made of a metal material.
  • the sum of the concentrations of copper, magnesium, calcium, and palladium contained in this metal material is 0.8 mass% or less.
  • the phosphorus fluoride storage container is a storage container for storing phosphorus fluoride, which is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride, and is a container in which the portion that comes into contact with the phosphorus fluoride is formed of a metal material.
  • the sum of the concentrations of copper, magnesium, calcium, and palladium contained in this metal material is 0.8 mass% or less.
  • the gas-filled storage container according to this embodiment is a gas-filled storage container in which phosphorus fluoride, which is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride, is filled in the storage container, the portion of the storage container that comes into contact with the phosphorus fluoride is formed of a metal material, and the sum of the concentrations of copper, magnesium, calcium, and palladium contained in the metal material is 0.8 mass% or less.
  • phosphorus fluoride which is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride
  • the metal material forming the part of the storage container that comes into contact with phosphorus fluoride contains at least one of copper, magnesium, calcium, and palladium, the catalytic action of these metals promotes a reaction in which metal atoms contained in the metal material and phosphorus fluoride form a complex. Therefore, if phosphorus fluoride is stored in a storage container formed of a metal material containing at least one of copper, magnesium, calcium, and palladium, the above complex formation reaction may progress during storage in the storage container, resulting in the generation of metal impurities and a decrease in the purity of the phosphorus fluoride.
  • the sum of the concentrations of copper, magnesium, calcium, and palladium contained in the metal material forming the portion of the storage container that comes into contact with the phosphorus fluoride is 0.8 mass% or less, so the above complex formation reaction is unlikely to proceed even during long-term storage.
  • metal impurities are unlikely to be generated, and therefore the concentration of metal impurities is unlikely to increase (i.e., the purity of the phosphorus fluoride is unlikely to decrease). Therefore, the phosphorus fluoride can be stored stably for long periods of time.
  • Metals that form complexes with phosphorus fluoride include, for example, nickel (Ni), zinc (Zn), chromium (Cr), molybdenum (Mo), and tungsten (W).
  • Ni nickel
  • Zn zinc
  • Cr chromium
  • Mo molybdenum
  • W tungsten
  • the sum of the concentrations of nickel, zinc, chromium, molybdenum, and tungsten in phosphorus fluoride is preferably maintained at 1000 mass ppb or less, more preferably at 800 mass ppb or less, and even more preferably at 500 mass ppb or less. If the sum of the concentrations of nickel, zinc, chromium, molybdenum, and tungsten in phosphorus fluoride is 1000 mass ppb or less, it tends to avoid poor etching performance when phosphorus fluoride is used as a dry etching gas.
  • the phosphorus fluoride storage method, storage container, and gas-filled storage container according to this embodiment are such that the sum of the concentrations of copper, magnesium, calcium, and palladium contained in the metal material forming the portion of the storage container that stores phosphorus fluoride and that comes into contact with the phosphorus fluoride is 0.8 mass% or less.
  • the metal material may contain at least one of copper, magnesium, calcium, and palladium (i.e., the sum of the concentrations may be more than 0 mass% and 0.8 mass% or less), or may not contain any of these elements at all (i.e., the sum of the concentrations may be 0 mass%).
  • the phosphorus fluoride is at least one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride. That is, the phosphorus fluoride may be any one of phosphorus trifluoride, phosphorus pentafluoride, and diphosphorus tetrafluoride, or may be a mixture of two or three of them.
  • the content of the main component which is the component with the greatest content, is preferably 99 mol% or more, more preferably 99.9 mol% or more, and even more preferably 99.99 mol% or more.
  • the total content of components other than the main component is preferably 0.1 mol% or less, more preferably 0.01 mol% or less, and even more preferably 0.001 mol% or less.
  • a gas consisting of phosphorus fluoride alone may be stored in the storage container, or a mixed gas containing phosphorus fluoride and a diluent gas may be stored in the storage container. Also, a part or all of phosphorus fluoride may be liquefied and stored in the storage container.
  • the diluent gas at least one selected from nitrogen gas (N 2 ), helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) may be used.
  • the content of the diluent gas is preferably 90% by volume or less, more preferably 50% by volume or less, of the total amount of gas stored in the storage container.
  • the phosphorus fluoride storage method, storage container, and gas-filled storage container it is preferable to store phosphorus fluoride with a purity of 99.90% by volume or more in the storage container. If the purity of the phosphorus fluoride introduced into the storage container is 99.90% by volume or more, the effect of being able to etch the object to be etched selectively and at a sufficient etching rate compared to the object not to be etched is achieved.
  • the shape, size, etc. of the storage container for storing or filling phosphorus fluoride are not particularly limited as long as the storage container can contain and seal phosphorus fluoride, the portion that contacts phosphorus fluoride is formed of a metal material, and the sum of the concentrations of copper, magnesium, calcium, and palladium contained in the metal material is 0.8 mass% or less.
  • the material of the portion of the storage container that does not contact phosphorus fluoride is not particularly limited. However, it is preferable that the storage container has corrosion resistance against phosphorus fluoride.
  • the metal material examples include manganese steel, stainless steel, chromium molybdenum steel, Hastelloy (registered trademark), Inconel (registered trademark), Monel (registered trademark), etc., from the viewpoint of corrosion resistance.
  • the metal material may be at least one of manganese steel and chromium molybdenum steel.
  • Storage containers made of manganese steel and chrome-molybdenum steel include, for example, containers manufactured from steel pipes specified in the JIS standard JIS G3429 (seamless steel pipes for high-pressure gas containers) STH11, STH12 (manganese steel pipes) and STH21, STH22 (chrome-molybdenum steel pipes).
  • the storage container also includes a valve, and like the storage container, the valve is preferably made of manganese steel, stainless steel, or chrome molybdenum steel. Valves made of brass or copper alloys such as Monel (registered trademark) can also be used as long as they are designed not to come into direct contact with phosphorus fluoride.
  • the metal material in the storage method, storage container, and gas-filled storage container of phosphorus fluoride according to this embodiment contains or does not contain at least one of copper, magnesium, calcium, and palladium, but when it contains, the sum of the concentrations of copper, magnesium, calcium, and palladium is 0.8 mass% or less, so that the complex formation reaction between phosphorus fluoride and nickel, zinc, chromium, molybdenum, and tungsten does not proceed easily as described above.
  • the absence of the above means that it is not possible to quantitatively determine the concentration by X-ray photoelectron spectroscopy (XPS analysis). That is, the concentrations of copper, magnesium, calcium, and palladium contained in the metal material can be measured by X-ray photoelectron spectroscopy. More specifically, they can be measured by the method described in the examples.
  • the sum of the concentrations of copper, magnesium, calcium, and palladium contained in the metal material must be 0.8 mass% or less, preferably 0.4 mass% or less, and more preferably 0.2 mass% or less.
  • copper, magnesium, calcium, and palladium are thought to be contaminated into the storage containers due to the metal materials that are the raw materials of the storage containers, or due to the manufacturing equipment for the storage containers that is used in manufacturing the storage containers.
  • the phosphorus fluoride (phosphorus fluoride before filling) filled into the storage container contains low concentrations of copper, magnesium, calcium, and palladium.
  • An example of a method for producing phosphorus fluoride with low concentrations of copper, magnesium, calcium, and palladium is a method for removing copper, magnesium, calcium, and palladium from phosphorus fluoride having a high sum of copper, magnesium, calcium, and palladium concentrations.
  • the method for removing copper, magnesium, calcium, and palladium from phosphorus fluoride includes a method using a filter, a method using an adsorbent, distillation, etc.
  • the material of the filter that selectively passes the phosphorus fluoride gas is preferably a resin, and polytetrafluoroethylene is particularly preferred, in order to prevent metal components from being mixed into the phosphorus fluoride.
  • the average pore size of the filter is preferably 0.01 ⁇ m or more and 30 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 10 ⁇ m or less. If the average pore size is within the above range, it is possible to sufficiently remove copper, magnesium, calcium, and palladium, and a sufficient flow rate of the phosphorus fluoride gas can be secured, thereby achieving high productivity.
  • the flow rate of the fluorinated gas passing through the filter is preferably 3 mL/min to 300 mL/min, more preferably 10 mL/min to 50 mL/min per cm2 of filter area. If the flow rate of the fluorinated gas is within the above range, the fluorinated gas is prevented from becoming high pressure, the risk of leakage of the fluorinated gas is reduced, and high productivity can be achieved.
  • concentrations of copper, magnesium, calcium, and palladium contained in the fluorinated phosphorus can be quantified by an inductively coupled plasma mass spectrometer (ICP-MS).
  • the pressure conditions during storage in the method for storing phosphorus fluoride according to this embodiment and the gas-filled storage container according to this embodiment are not particularly limited as long as phosphorus fluoride can be stored hermetically in the storage container, but are preferably 0.15 MPa or more and 15 MPa or less, and more preferably 0.3 MPa or more and 9 MPa or less. If the pressure conditions are within the above range, phosphorus fluoride can be circulated without heating when the storage container is connected to a dry etching device.
  • the temperature conditions during storage in the method for storing phosphorus fluoride according to this embodiment and the gas-filled storage container according to this embodiment are not particularly limited, but are preferably -20°C or higher and 50°C or lower, and more preferably 0°C or higher and 40°C or lower. If the storage temperature is -20°C or higher, the storage container is unlikely to deform, so there is a low possibility that the airtightness of the storage container will be lost and oxygen, water, etc. will be mixed into the storage container. If oxygen, water, etc. are mixed in, the decomposition reaction of phosphorus fluoride may be promoted. On the other hand, if the storage temperature is 50°C or lower, the complex formation reaction between phosphorus fluoride and nickel, zinc, chromium, molybdenum, and tungsten will not proceed easily.
  • the phosphorus fluoride stored in the storage method, storage container, and gas-filled storage container according to the present embodiment can be used as an etching gas.
  • the phosphorus fluoride-containing etching gas stored in the storage method, storage container, and gas-filled storage container according to the present embodiment can be used in both plasma etching using plasma and plasmaless etching not using plasma.
  • plasma etching examples include reactive ion etching (RIE), inductively coupled plasma (ICP) etching, capacitively coupled plasma (CCP) etching, electron cyclotron resonance (ECR) plasma etching, and microwave plasma etching.
  • RIE reactive ion etching
  • ICP inductively coupled plasma
  • CCP capacitively coupled plasma
  • ECR electron cyclotron resonance
  • microwave plasma etching the plasma may be generated in a chamber in which the member to be etched is placed, or the plasma generation chamber may be separate from the chamber in which the member to be etched is placed (i.e., remote plasma may be used).
  • Example 1 A seamless container with a volume of 10 L made of manganese steel was prepared, and its inner surface was shot blasted, acid washed, and washed with water in the order described, and then dried. A valve was attached to the dried container to prepare a storage container.
  • the valve was made of SUS316L, which has a total concentration of copper, magnesium, calcium, and palladium of less than 0.005 mass%.
  • the storage container was heated to 160°C, and the inside of the storage container was depressurized using a vacuum pump to create a vacuum.
  • the storage container with the inside in a vacuum state was then connected to a gas filling line equipped with a cylinder filled with phosphorus trifluoride.
  • the cylinder filled with phosphorus trifluoride was made of SUS316, with the total concentration of copper, magnesium, calcium, and palladium being less than 0.005% by mass.
  • the phosphorus trifluoride filled in the cylinder was analyzed by gas chromatography, its purity was found to be 99.95% by volume. Furthermore, when the phosphorus trifluoride filled in the cylinder was analyzed by inductively coupled plasma mass spectrometry, the total concentration of copper, magnesium, calcium, and palladium contained in the phosphorus trifluoride was found to be 3,500 ppb by mass or less.
  • the gas filling line was subjected to a purging process in which the inside was filled with nitrogen gas and then the inside was depressurized using a vacuum pump to create a vacuum state, and this was repeated. Then, 1 kg of phosphorus trifluoride was sent from the cylinder to the storage container via the purged gas filling line, resulting in a gas-filled storage container in which phosphorus trifluoride was filled in the storage container.
  • the internal pressure (gauge pressure) of the resulting gas-filled storage container was 2.84 MPaG.
  • the gas-filled storage container thus obtained was filled with phosphorus trifluoride and allowed to stand at 23°C for 30 days, after which the gas phase inside the gas-filled storage container was extracted from the upper outlet.
  • concentrations of metal impurities contained in the extracted phosphorus trifluoride i.e., the concentrations of nickel, zinc, chromium, molybdenum, and tungsten, were measured using an inductively coupled plasma mass spectrometer. The results are shown in Table 1. Details of the method for measuring the concentrations of nickel, zinc, chromium, molybdenum, and tungsten using an inductively coupled plasma mass spectrometer are as follows.
  • phosphorus trifluoride gas was extracted from the gas phase and passed through 100 g of nitric acid aqueous solution with a concentration of 1 mol/L at a flow rate of 100 mL/min, causing bubbling. This bubbling caused the phosphorus trifluoride to come into contact with the nitric acid aqueous solution, causing nickel, zinc, chromium, molybdenum, and tungsten to be absorbed into the nitric acid aqueous solution.
  • the mass of the nitric acid aqueous solution after bubbling was 99 g (M1).
  • the mass difference of the gas-filled storage container before and after bubbling was a decrease of 23 g (M2).
  • the phosphorus trifluoride was extracted from the gas-filled storage container.
  • the storage container from which the phosphorus trifluoride had been extracted was then subjected to a purging process in which the inside was filled with nitrogen gas, and then the inside was depressurized using a vacuum pump to create a vacuum state, which was repeated 30 times.
  • the purged storage container was then cut using a laser cutting machine to obtain square pieces measuring 2 cm on a side. Using these pieces as measurement samples, X-ray photoelectron spectroscopy was performed on the inner surface of the storage container to measure the concentrations of copper, magnesium, calcium, and palladium in the metal material that forms the part of the storage container that comes into contact with the phosphorus fluoride. The results are shown in Table 1.
  • the analytical device, analytical conditions, and sputtering conditions used in the XPS analysis are as follows: Analytical equipment: X-ray photoelectron spectrometer PHI5000VersaProbeII manufactured by ULVAC-PHI, Inc. Atmosphere: vacuum (less than 1.0 ⁇ 10 6 Pa) X-ray source: monochromated Al Ka (1486.6 eV) Spectrometer: electrostatic concentric hemispherical spectrometer X-ray beam diameter: 100 ⁇ m (25 W, 15 kV) Signal capture angle: 45.0° Pass energy: 23.5 eV Measurement energy range: Cu2p 933-953 eV Mg2p 50 eV Ca2p 347-351eV Pd3d 335-340eV Sputtering ion source: Ar2,500+ Sputtering acceleration voltage: 10 kV Sputtering area: 2 mm x 2 mm Sputtering time: 10 minutes
  • Examples 2 and 3 and Comparative Examples 1 and 2 The same operations as in Example 1 were carried out, except that the concentrations of copper, magnesium, calcium, and palladium in the manganese steel forming the seamless container used as the storage container were different as shown in Table 1, and the concentrations of metal impurities in the phosphorus trifluoride gas in the gas-filled storage container after standing at 23° C. for 30 days were measured with an inductively coupled plasma mass spectrometer. The results are shown in Table 1. The concentrations of copper, magnesium, calcium, and palladium in the manganese steel were measured by XPS analysis of the inner surface of the storage container in the same manner as in Example 1.
  • Examples 4, 5, 6 and Comparative Examples 3 and 4 The same operations as in Example 1 were carried out, except that a valve was attached to a seamless container having a volume of 10 L made of chromium-molybdenum steel to serve as the storage container, and the concentration of metal impurities in the phosphorus trifluoride gas in the gas-filled storage container after standing at 23° C. for 30 days was measured using an inductively coupled plasma mass spectrometer. The results are shown in Table 1. The concentrations of copper, magnesium, calcium, and palladium in the chromium-molybdenum steel were measured by subjecting the inner surface of the storage container to XPS analysis in the same manner as in Example 1, and the values are as shown in Table 1.
  • Examples 7 and 8 and Comparative Examples 5 and 6) The same operations as in Example 1 were carried out, except that the type of phosphorus fluoride filled in the storage container and the seamless container used as the storage container were different as shown in Table 1, and the concentrations of metal impurities in the phosphorus pentafluoride gas in the gas-filled storage container after standing at 23° C. for 30 days were measured with an inductively coupled plasma mass spectrometer. The results are shown in Table 1. The concentrations of copper, magnesium, calcium, and palladium in the manganese steel and chromium molybdenum steel were measured by subjecting the inner surface of the storage container to XPS analysis in the same manner as in Example 1.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)

Abstract

L'invention concerne un procédé de stockage d'un fluorure de phosphore dans lequel des concentrations d'impuretés métalliques augmentent difficilement. Un fluorure de phosphore, qui est au moins l'un parmi le trifluorure de phosphore, le pentafluorure de phosphore et le tétrafluorure de diphosphore, doit être stocké dans ce récipient de stockage dans lequel une partie qui entre en contact avec le fluorure de phosphore est formée d'un matériau métallique. La concentration totale de cuivre, de magnésium, de calcium et de palladium contenus dans le matériau métallique est égale ou inférieure à 0,8 % en masse.
PCT/JP2024/018017 2023-05-30 2024-05-15 Procédé de stockage de fluorure de phosphore, récipient de stockage et récipient de stockage chargé de gaz WO2024247730A1 (fr)

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JP2023-088731 2023-05-30
JP2023088731 2023-05-30

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070165A (ja) * 1983-05-19 1985-04-20 ユニオン・カ−バイド・コ−ポレ−シヨン 気体貯蔵シリンダ用低合金鋼
JPS6469900A (en) * 1987-09-09 1989-03-15 Mitsubishi Electric Corp Safety handling device for gas cylinder
JPH01307229A (ja) * 1988-06-06 1989-12-12 Canon Inc 堆積膜形成法
JP2003500551A (ja) * 1999-05-28 2003-01-07 レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 耐蝕性容器およびガス供給システム
JP2012154429A (ja) * 2011-01-26 2012-08-16 Central Glass Co Ltd 高圧ガスの供給方法
JP2016074976A (ja) * 2014-10-07 2016-05-12 新日鐵住金株式会社 オーステナイト系ステンレス鋼、及び、高圧水素ガス用機器又は液体水素用機器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070165A (ja) * 1983-05-19 1985-04-20 ユニオン・カ−バイド・コ−ポレ−シヨン 気体貯蔵シリンダ用低合金鋼
JPS6469900A (en) * 1987-09-09 1989-03-15 Mitsubishi Electric Corp Safety handling device for gas cylinder
JPH01307229A (ja) * 1988-06-06 1989-12-12 Canon Inc 堆積膜形成法
JP2003500551A (ja) * 1999-05-28 2003-01-07 レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 耐蝕性容器およびガス供給システム
JP2012154429A (ja) * 2011-01-26 2012-08-16 Central Glass Co Ltd 高圧ガスの供給方法
JP2016074976A (ja) * 2014-10-07 2016-05-12 新日鐵住金株式会社 オーステナイト系ステンレス鋼、及び、高圧水素ガス用機器又は液体水素用機器

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