WO2024211344A1 - Polycrystalline diamond cutting element with modified tungsten carbide substrate for improved thermal stability - Google Patents

Abstract

A cutting element includes a substrate having a hard material and a binder, and a polycrystalline diamond table. The substrate has at least a portion with a thermal conductivity greater 130 W/m°C. A polycrystalline diamond table is arranged on an interface surface of the substrate. A bit for earth boring includes one or more such cutting elements.

Description

FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT POLYCRYSTALLINE DIAMOND CUTTING ELEMENT WITH MODIFIED TUNGSTEN CARBIDE SUBSTRATE FOR IMPROVED THERMAL STABILITY CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims priority to U.S. Provisional Patent App. Serial No.63/493,918 filed on April 3, 2023 is incorporated herein by reference in its entirety. BACKGROUND OF THE DISCLOSURE [0002] This invention relates to cutting elements such as those used in earth boring bits for drilling earth formations and the various processes for making such. [0003] Generally speaking, the process for making a cutting element employs a substrate of cemented tungsten carbide where the tungsten carbide particles are cemented together with a metal such as cobalt. The cemented tungsten carbide body is placed adjacent to a layer of ultra hard material particles such as diamond or cubic boron nitride (CBN) particles along with a binder, such as cobalt, within a refractory metal enclosure (commonly referred to as a “can”), as for example a niobium can, and the combination is subjected to a high temperature at a high pressure where diamond or CBN is thermodynamically stable. This is known as a sintering process. The sintering process results in the re-crystallization and formation of a PCD or PCBN ultra hard material layer on the cemented tungsten carbide substrate, i.e., it results in the formation of a cutting element having a cemented tungsten carbide substrate and an ultra-hard material cutting layer. The ultra hard material layer may include tungsten carbide particles and/or small amounts of cobalt. Cobalt promotes the formation of PCD or PCBN. Cobalt may also infiltrate the diamond or CBN from the cemented tungsten carbide substrate. [0004] The cemented tungsten carbide substrate is typically formed by placing tungsten carbide powder and a binder in a mold and then heating the binder to melting temperature causing the binder to melt and infiltrate the tungsten carbide particles fusing them together and cementing the substrate. Alternatively, the tungsten carbide powder may be cemented by the binder during the high temperature, high pressure sintering process used to re-crystallize the ultra hard material layer. In such case, the substrate material powder along with the binder are placed in the refractory metal enclosure. The ultra hard material particles are provided over the substrate material to form FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT the ultra-hard material polycrystalline layer. The entire assembly is then subjected to a high temperature, high pressure process forming the cutting element having a substrate and a polycrystalline ultra hard material layer over it. [0005] Currently, the most common method for improving thermal stability of cutting elements is by forming a TSP cutting layer through leaching whereby cobalt from the interstitial spaces is removed. The current trend in the industry is to leach the diamond table as deeply as possible, to depths of 1 mm or more. However, catastrophic diamond failure still occurs in cutters once the leached layer has worn away. Cutting elements that do not undergo failure at higher operating temperatures and thus, have longer operating lives are desired. SUMMARY [0006] Many embodiments described herein are directed to a cutting element with a substrate comprising a hard material and a binder. The substrate can have an interface surface, where at least a portion of the substrate has a thermal conductivity greater 130 W/m°C. Additionally, interface surface has a polycrystalline diamond table thereon. [0007] In various embodiments, the cutting element has an average grain size of the hard material that is greater than 5 microns. [0008] In other embodiments, the substrate has a thermal conductivity of at least 140 W/m°C. [0009] In still other embodiments, the substrate has a length and comprises a first axial portion and a second axial portion over the first axial portion, wherein the interface surface is formed on the first axial portion, and wherein the first axial portion has length not greater than 50% of the length of the substrate. [0010] In yet other embodiments, the first axial portion has a lower thermal conductivity than the second axial portion. [0011] In still yet other embodiments, the first axial portion substrate comprises more cobalt by weight than the second axial portion. [0012] In some embodiments, the cutting element has a substrate length greater than 12.7 mm. And the polycrystalline diamond table has a table thickness, where a cutting element length of the cutting element is the sum of the substrate length and the table thickness. Additionally, the substrate length is greater than 80% of the cutting element length. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT [0013] In other embodiments, the binder comprises cobalt and nickel, wherein the cobalt comprises between 5 to 10 percent by weight of the substrate, and the nickel comprises between 1 to 4 percent by weight of the substrate. [0014] In still other embodiments, the cobalt comprises less than 8 percent by weight of the substrate, the nickel comprises between 1 to 2 percent by weight of the substrate, and an average grain size of the hard material is between 6 to 8 microns. [0015] Other embodiments are directed to a drag bit, wherein the drag bit has a plurality of blades and a plurality of cutting elements mounted on each blade. At least one of the cutting elements has a substrate comprising a hard material and a binder. The substrate has an interface surface, where at least a portion of the substrate has a thermal conductivity greater 130 W/m°C. Additionally, the interface surface has a polycrystalline diamond table thereon. [0016] In various embodiments, the average grain size of the hard material is between 6 to 8 microns. [0017] In other embodiments, the substrate of the at least one cutting element has a thermal conductivity of at least 140 W/m°C. [0018] In still other embodiments, the substrate of the at least one cutting element has a length and has a first axial portion and a second axial portion over the first axial portion, wherein the interface surface is formed on the first axial portion, and wherein the first axial portion has length not greater than 50% of the length of the substrate. [0019] In various other embodiments, the first axial portion has a lower thermal conductivity than the second axial portion. [0020] In yet other embodiments, the second axial portion comprises a CoNi substrate comprising between 5 to 7 percent cobalt and between 1 to 2 percent nickel. [0021] In still yet other embodiments, the average hard material grain size of the second axial portion is greater than the average hard material grain size of the first axial portion. [0022] In some embodiments, a substrate length of the at least one cutting element is greater than 12.7 mm, and the polycrystalline diamond table of the at least one cutting element has a table thickness, and the cutting element length of the at least one cutting element is the sum of the substrate length and the table thickness. Additionally, the at least one cutting element substrate length is greater than 80% of the cutting element length. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT [0023] In other embodiments, the binder comprises cobalt and nickel, wherein the cobalt comprises between 5 to 10 percent by weight of the substrate, and the nickel comprises between 1 to 4 percent by weight of the substrate. [0024] In yet other embodiments, the cobalt comprises less than 8 percent by weight of the substrate, the nickel comprises between 1 to 2 percent by weight of the substrate, and an average grain size of the hard material is between 6 to 8 microns. [0025] In some embodiments, each blade comprises only a single row of cutting elements. [0026] This summary is provided to introduce a selection of concepts that are further described in the detailed description. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be used as an aid in limiting the scope of the claimed subject matter. Additional features and aspects of embodiments of the disclosure will be set forth herein, and in part will be obvious from the description, or may be learned by the practice of such embodiments. BRIEF DESCRIPTION OF THE DRAWINGS [0027] In order to describe the manner in which the above-recited and other features of the disclosure can be obtained, a more particular description will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. For better understanding, the like elements have been designated by like reference numbers throughout the various accompanying figures. While some of the drawings may be schematic or exaggerated representations of concepts, at least some of the drawings may be drawn to scale. Understanding that the drawings depict some example embodiments, the embodiments will be described and explained with additional specificity and detail through the use of the accompanying drawings in which: [0028] FIG.1 is a perspective view of an example embodiment cutting element. [0029] FIG. 2 is a perspective view of an example embodiment drag bit having two rows of cutting elements mounted on each blade. [0030] FIG.3A is a side view of another example embodiment cutting element. [0031] FIG.3B is a side view of yet another example embodiment cutting element. [0032] FIG.4 is a side view of a further example embodiment cutting element. [0033] FIG.5 is a perspective view of another example embodiment drag bit having a single row of cutting elements mounted on each blade. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT DETAILED DESCRIPTION [0034] This disclosure is generally directed to a thermally stable cutting element and the various methods in which such a bit can be manufactured. Various embodiments may be directed to a thermally stable cutting element where the cutting element has a substrate made of a hard material and a binder. The substrate can have an interface that interfaces or connects with a polycrystalline diamond table on the interface. In many embodiments, the substrate has a portion that has a thermal conductivity greater than 130 W/m°C. [0035] When drilling with polycrystalline diamond (PCD) cutting elements, the diamond in contact with rock formation, must be kept below a critical temperature of approximately 700° C. Above this critical temperature, the diamond fails rapidly and drilling performance degrades significantly. Therefore having a Thermally Stable Polycrystalline (TSP) has long been sought after in the industry. This is typically achieved by “leaching” the cobalt from the diamond lattice structure of PCD. When formed, PCD comprises individual diamond crystals that are interconnected defining a lattice structure. Cobalt particles are often found within the interstitial spaces in the diamond lattice structure. Cobalt has a significantly different coefficient of thermal expansion as compared to diamond, and as such upon heating of the PCD, the cobalt expands, causing cracking to form in the lattice structure, resulting in the deterioration of the PCD layer. By removing, i.e., by leaching, the cobalt from the diamond lattice structure, the PCD layer becomes more heat resistant, i.e., more thermally stable. However, the polycrystalline diamond layer becomes more brittle. Accordingly, in certain cases, only a select portion, measured either in depth or width, of the PCD layer is leached to gain thermal stability without losing impact resistance. A TSP material may also be formed by forming PCD with a thermally compatible silicon carbide binder instead of cobalt. [0036] When cobalt is present and the PCD cutting tip reaches above 700 °C during drilling, differential thermal expansion between diamond and cobalt in the microstructure creates high stresses. In addition, the cobalt catalyst starts to convert diamond back to graphite. Therefore, the strength of un-leached PCD degrades rapidly at elevated temperature. By acid leaching to remove cobalt from the diamond table, the material becomes more stable at high temperature. Accordingly, many embodiments described herein are directed towards improvements in the TSP diamond structure as well as a more thermally stable cutter. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT [0037] For example, Fig. 1 illustrates an embodiment of a cutting element 1, such as shear cutter, that can be mounted on an earth boring bit. Typically the cutter 1 can have a cylindrical cemented tungsten carbide body 10, i.e., a substrate, having an end face 12 (also referred to herein as an “interface surface”). An ultra hard material layer (also referred to herein as a table) 18, such as polycrystalline diamond (PCD), polycrystalline cubic boron nitride (PCBN) or a thermally stable polycrystalline (TSP) material can be bonded on, and interfaces with, the interface surface forming a cutting layer. In various embodiments, the substrate can have a flat, curved or non- uniform interface surface 12. In some embodiments a non-uniform interface surface can have peaks and valleys. Cutting elements, once formed in accordance the various embodiments described herein, can be mounted in pockets 2 of an earth boring bit, such a drag bit 7, as illustrated in FIG.2 and contact the earth formation during drilling along edge 9. [0038] In an example embodiment, a PCD cutting element 1, such as the cutting element shown in FIG. 1, can be formed by using high thermal conductivity cemented tungsten carbide substrate during the PCD manufacturing process, resulting in a PCD cutting element having a substrate with a high thermal conductivity and a polycrystalline diamond table or layer 18. The diamond table can be bonded to an interface surface 12 of the substrate by the high temperature, high pressure (HPHT) sintering process. The interface surface may be planar (e.g., flat, as for example shown in FIG.3A), or non-planar (i.e., curved, or non-uniform having peaks and valleys as for example shown in FIG.3B). The diamond table 18 may have a flat or planar upper surface 19 (i.e., the surface of the diamond table opposite the surface of the diamond table interfacing with the substrate interface surface 12) as for example shown in FIG.3A, or a non-planar upper surface 19, such a domed surface as for example shown in FIG. 3B. In an example embodiment, the interface surface 12 may be planar and the upper surface 19 of the diamond table may be non- planar. In another example embodiment the interface surface 12 can be non-planar and the diamond table upper surface 19 can be planar. [0039] By adopting a high thermal conductivity substrate, the maximum temperature at the cutting tip of the PCD table can be decreased during rock drilling. As a result, the wear of the PCD table due to the high temperatures during drilling can be decreased and the operational life of the cutting element can be increased. The high thermal conductivity substrate may be used in combination with leached (TSP) or un-leached polycrystalline diamond cutting layer (i.e., table) to improve the PCD cutting element thermal performance. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT [0040] In an example embodiment, the high thermal conductivity substrate acts as a heat sink during drilling to keep the diamond table cooler. Currently, tungsten carbide substrates used in PCD manufacturing have thermal conductivity 90-110 W/m°C. In an example embodiment, the high thermal conductivity substrate has a thermal conductivity greater than 120 W/m°C. In a further preferable example embodiment, the high thermal conductivity substrate has a thermal conductivity greater 130 W/m°C. For example, some embodiment may have a thermal conductivity of 140 W/m°C or higher. The high thermal conductivity enables the substrate to draw more heat away from the diamond table during cutting. The thermal conductivity of the substrate, and therefore heat drawn from the table, may be increased in one or more ways. For example, the thermal conductivity of the substrate can be increased by using increasing the size of hard material (e.g., tungsten carbide) grains, by lowering weight percent cobalt (Co) used to form the substrate, by increasing the length of the carbide substrate, and/or by modifying the construction and composition of the substrate. [0041] In some embodiments, increasing the thermal conductivity of the substrate by 60 W/m °C can lower the maximum PCD table temperature by as much as 49° C during modeled operation at downhole conditions. Accordingly, in a modeled operation at downhole conditions of a conventional cutting element with a thermal conductivity substrate of 90 W/m°C lead to a modeled temperature of 859°C. In contrast, embodiments of an improved cutting element resulted in a modeled temperature of 810°C for a present embodiment of a cutting element having a high thermal conductivity substrate of approximately 151 W/m°C. In accordance with many embodiments, the diamond table stays cooler due to the enhanced thermal conductivity of the substrate, and the diamond table rate of wear during cutting decreases. [0042] In accordance with various embodiments, a catalyst material of the substrate may infiltrate into the adjacent diamond powder to facilitate bonding the diamond grains together during the HPHT process. The catalyst material may be cobalt (Co) or nickel (Ni), and a substrate useful for providing the same can be a cobalt containing substrate, such as tungsten carbide – cobalt (WC—Co) or tungsten carbide – cobalt-nickel (WC-CoNi). [0043] Substrate materials useful for serving as the infiltration substrate may include metallic materials, ceramic materials, cermet materials, and combinations thereof. Example infiltration substrates may be formed from hard materials like carbides such as WC, W₂C, TiC, VC, or ultra- hard materials such as synthetic diamond, natural diamond and the like, wherein the hard or ultra- FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT hard materials may include a softer binder phase comprising one or more Group VIII material such as Co, Ni, Fe, and Cu, and combinations thereof. In accordance with many embodiments, the infiltration substrate can have a material composition that operates to ensure its ability to release its binder phase material and infiltrate into the diamond powder during the HPHT process, thereby bonding the diamond table with the substrate. [0044] In an example embodiment, the high thermal conductivity substrate may be formed from WC-Co including a WC hard material with an average grain size greater than about 5 microns, and in a range of from about 6 to 12 microns or from about 6 to 8 microns. The substrate may have a Co content greater than about 5 percent by weight, and in the range of from about 5 to 13 percent by weight based on the total weight of the WC-Co material. [0045] In some embodiments, the high thermal conductivity substrate may be formed from WC—CoNi including a WC hard material with an average particle size greater than about 5 microns, and in the range of from about 6 to 12 microns or from about 6 to 8 microns. The substrate may have a Co content greater than about 5 percent by weight, and in the range of from about 5 to 10 percent by weight based on the total weight of the WC—CoNi material. The substrate may have a Ni content greater than about 1 percent by weight, and in the range of from about 1 to 4 percent by weight based on the total weight of the WC-CoNi. Lowering the Co content in the substrate may facilitate increasing the thermal conductivity of the substrate. That is, lowering the Co alone or in combination with adding Ni content to the substrate may increase the thermal conductivity of the substrate. [0046] Various embodiments may include a substrate that can be formed from WC—CoNi having an average WC grain size of about 6 microns, a Co content of about 9.9 percent by weight, and a Ni content of about 3.6 percent by weight. Other embodiments can include a substrate formed from WC-CoNi having an average WC grain size of about 6 microns, a Co content of about 8.4 percent by weight, and a Ni content of about 2.6 percent by weight. In other embodiments, the substrate may be formed from WC-CoNi having an average WC grain size of about 6 microns, a Co content of about 5 percent by weight, and a Ni content of about 1 percent by weight. Various embodiments may include a substrate formed from WC-CoNi having an average WC grain size of about 6 microns, a Co content of about 7.5 percent by weight, and a Ni content of about 1.5 percent by weight. Some embodiments can also include a substrate formed from WC-Co having an average grain size of between 6 to 8 microns, and a Co content of about 13 to 14 percent by weight. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT [0047] Fig.4 further illustrates an embodiment of a thermally stable polycrystalline cutter. In accordance with numerous embodiments, the material properties of the high conductivity tungsten carbide substrate, including the coarse tungsten carbide (WC) grains (e.g., greater than 5 micron average grain size) and low cobalt content, may not make it possible to to sinter the diamond onto the high-conductivity substrate. In such case, the diamond table 18 can be sintered onto a substrate wafer or transition layer 20 having a first thermal conductivity, as can be illustrated in FIG.4. The substrate wafer can then bonded to a substrate extension 24 having a second thermal conductivity that is higher than the first thermal conductivity. The substrate extension 24 may have the higher thermal conductivity as described herein. In one example embodiment, the substrate wafer can have a thermal conductivity of 90 W/m°C and the substrate extension can have a thermal conductivity of 151 W/m°C or greater than 120 W/m°C. [0048] The thermal conductivity of the substrate wafer 20 can be chosen to be sufficient to offer thermal gains while allowing the sintering of the diamond table to it. For example, the substrate wafer 20 and the substrate extension 24 together can define the substrate. In some embodiments, the substrate wafer 20 can have a length of not greater than 50% of the length of the entire substrate. The substrate wafer 20 may have a thickness between 15 percent to 50 percent of a thickness of the entire substrate (e.g., substrate wafer 20 and substrate extension 24). For example, the substrate wafer 20 may be 3 mm thick, and the substrate extension 24 may be between 7 to 17 mm. In some embodiments, the substrate wafer 20 can be between 20 to 30 percent of a thickness of the entire substrate. [0049] In numerous embodiments, the substrate wafer 20 may have a different composition and/or average hard material grain size than the substrate extension 24. In some embodiments, the substrate wafer 20 can have a greater Co content than the substrate extension 24. For example, the substrate wafer 20 may have greater than 10 percent Co, greater than 11 percent Co, greater than 12 percent Co, or greater than 13 percent Co, and the substrate extension 24 may have less than 10 percent Co, less than 9 percent Co, less than 8 percent Co, or less than 7 percent Co. Additionally, or in the alternative, the substrate wafer 20 may have less Ni than the substrate extension 24. For example, in some embodiments the substrate wafer 20 may have 13 percent Co with approximately 0 percent Ni, and the substrate extension 24 may have between 5 to 7 percent Co with between 1 to 2 percent Ni. Moreover, the substrate wafer 20 may have an average WC grain size less than 5 microns such as approximately 3 microns, and the substrate extension 24 FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT may have an average WC grain size greater than 5 microns such as approximately 6 microns. Accordingly, the composition and/or the average WC grain size of the entire substrate may be configured to increase the thermal conductivity with the substrate extension 24 relative to the substrate wafer 20. [0050] In some embodiments, the substrate wafer 20 can be bonded to the substrate extension 24 via a braze material. In some embodiments, an infiltrant may be positioned between the substrate wafer 20 and the substrate extension 24 prior to the HPHT process to facilitate joining the substrate wafer 20 with the substrate extension 24. The high thermal conductivity substrate 10 may have multiple axial portions with different thermal conductivities. For example, the substrate wafer 20 may be a first axial portion with a first thermal conductivity that less than a second axial portion (e.g., the substrate extension 24) with a second thermal conductivity. Moreover, a bonding material between the first axial portion and the second axial portion may have a third thermal conductivity that can be between the first thermal conductivity and the second thermal conductivity. [0051] In accordance with various embodiments, the first and second axial portions may have different thermal conductivities based on the cobalt percentages. For example, in some embodiments the cobalt by weight in the first axial portion may be higher or more than the cobalt by weight in the second axial portion or any other portion thereof. Additionally, some embodiments may have different thermal conductivity based overall length of the different portions. For example, in some embodiments the first and second axial portions may have different lengths. In some embodiments, the first axial portion may be 50% or less than the length of the substrate. Accordingly, it can be appreciated that the thermal conductivity of the different axial portions may be different where the first may be lower than the second. Additionally, in many embodiments, the grain size of the different axial portions can vary in combination with any of the disclosed embodiments herein. For example, the hard material grain size of the second axial portion may be greater than the average hard material grain size of the first axial portion. [0052] As shown in the example embodiment of FIG.3A, the substrate length 25 (as measured from a base 23 of the substrate to the distalmost end of interface surface 12) can be 70% or slightly higher than 70% of the overall cutting element length 27 (as measured from the base 23 of the substrate/cutting element to the distalmost end of the upper surface 19 of the diamond table). In various embodiments, the substrates may have a length of at least 0.5 inch (12.7 mm) and/or have FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT a length greater 70% of the overall length of the cutting element. In numerous embodiments, the substrates may have a length equal to or greater than 80% of the overall length of the cutter. [0053] In some embodiments, it can be demonstrated that using longer substrates in a steel bitbody can be more effective than traditional cutters. FEA analysis of a standard cutting element with 0.120 inch (3 mm) thick diamond (i.e., PCD) table and 0.670 inch (17 mm) long substrate (which is 84.8% of the overall length of the cutting element) may have a simulated cutting maximum temperature at the PCD (i.e., diamond) table decrease by as much as 70° C in comparison to a cutting element having a 0.120 inch (3mm) thick diamond table and 0.390 inch (9.9 mm) long substrate (which is 76.5 % of the overall length of the cutting element). [0054] The high thermal conductivity substrate discussed herein can be greater than the thermal conductivity of the bit body material that forms the pocket in which the cutting element is arranged. For example, the high thermal conductivity substrate of the cutting element can be greater than the thermal conductivity of a steel body bit and a matrix body bit. In some embodiments, the high thermal conductivity substrate of the cutting element can be 2, 3, 4 or more times greater than the thermal conductivity of the bit body material. Accordingly, increasing the length of the substrate increases the heat drawn from the diamond table. Furthermore, increasing the length of the substrate in combination with decreasing the Co content less than 10 percent by weight of the substrate, increasing the average WC grain size to between 6 to 8 microns, or increasing the Ni percent by weight of the substrate may further increase the heat drawn from the diamond table into the substrate, thereby improving the thermal conductivity of the cutter and extending the working life of the cutter. [0055] The cutting elements, in various embodiments may be mounted on blades 28 of a drag bit body as shown in FIG.5. Each of these cutting elements may have a substrate length, a PCD table thickness and an overall cutting element length. In some embodiments, cutting elements that may be subject to higher temperature during drilling can be designed to have a longer substrate with higher thermal conductivity as described herein, such that the substrate length can be at least 0.500 inches (12.7 mm) and that can be at least 80% of the overall length of the cutting element. [0056] As illustrated in FIG.2, some drag bits may frequently have two rows 52, 54 of cutting elements mounted on each blade of a drag bit to account for the wear of the cutting element diamond tables that can result from high temperatures during drilling. In accordance with various embodiments, cutting elements, as disclosed herein, can be used in a single row of cutting elements FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT on each blade, as shown in FIG.5. In many embodiments, cutters can have an improved resistance to wear at the high temperatures during drilling, thus allowing for only single rows to be used. In other words, fewer cutting elements having high thermal conductivity substrates may be arranged on the bit without reducing the effectiveness of the bit relative to a similar bit with two rows of cutting elements without high thermal conductivity substrates. [0057] Although relative terms such as “outer,” “inner,” “upper,” “lower,” “below,” “above,” and similar terms may have been used herein to describe a spatial relationship of one element to another, it can be understood that these terms are intended to encompass different orientations of the various elements and components of the invention in addition to the orientation depicted in the figures. Furthermore, as used herein, when a component is referred to as being "on" another component, it can be directly on the other component or components may also be present therebetween. In addition, the terms “first”, “second”, and “third” when referring to components are just labels for distinguishing such components from each other and are not the generic names of such components. For example, a component described as a “first” component in the specification may be recited in the claims as a “second” component. [0058] While this disclosure has been provided with particular references to example embodiments thereof, the example embodiments described herein are not intended to be exhaustive or to limit the scope of the invention to the exact forms disclosed. Persons skilled in the art and technology to which this disclosure pertains will appreciate that alterations and changes in the described structures and methods of assembly and operation can be practiced without meaningfully departing from the principles, spirit, and scope of this disclosure, as set forth in the following claims.

Claims

FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT CLAIMS What is claimed is: 1. A cutting element comprising: a substrate comprising a hard material and a binder, the substrate having an interface surface, wherein at least a portion of the substrate has a thermal conductivity greater 130 W/m°C; and a polycrystalline diamond table on the interface surface. 2. The cutting element of claim 1, wherein an average grain size of the hard material is greater than 5 microns. 3. The cutting element of claim 2, wherein the substrate has a thermal conductivity of at least 140 W/m°C. 4. The cutting element of claim 1, wherein the substrate has a length and comprises a first axial portion and a second axial portion over the first axial portion, wherein the interface surface is formed on the first axial portion, and wherein the first axial portion has length not greater than 50% of the length of the substrate. 5. The cutting element of claim 4, wherein the first axial portion has a lower thermal conductivity than the second axial portion. 6. The cutting element of claim 5, wherein the first axial portion substrate comprises more cobalt by weight than the second axial portion. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT 7. The cutting element of claim 1, wherein a substrate length of the substrate is greater than 12.7 mm, wherein the polycrystalline diamond table has a table thickness, and a cutting element length of the cutting element is the sum of the substrate length and the table thickness, wherein the substrate length is greater than 80% of the cutting element length. 8. The cutting element of claim 1, wherein the binder comprises cobalt and nickel, wherein the cobalt comprises between 5 to 10 percent by weight of the substrate, and the nickel comprises between 1 to 4 percent by weight of the substrate. 9. The cutting element of claim 8, wherein the cobalt comprises less than 8 percent by weight of the substrate, the nickel comprises between 1 to 2 percent by weight of the substrate, and an average grain size of the hard material is between 6 to 8 microns. 10. A drag bit comprising: a plurality of blades; and a plurality of cutting elements mounted on each blade, wherein at least one of the cutting elements comprises, a substrate comprising a hard material and a binder, the substrate having an interface surface, wherein at least a portion of the substrate has a thermal conductivity greater 130 W/m°C, and a polycrystalline diamond table on the interface surface. FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT 11. The drag bit of claim 10, wherein an average grain size of the hard material is between 6 to 8 microns. 12. The drag bit of claim 11, wherein the substrate of the at least one cutting element has a thermal conductivity of at least 140 W/m°C. 13. The drag bit of claim 10, wherein the substrate of the at least one cutting element has a length and comprises a first axial portion and a second axial portion over the first axial portion, wherein the interface surface is formed on the first axial portion, and wherein the first axial portion has length not greater than 50% of the length of the substrate. 14. The drag bit of claim 13, wherein the first axial portion has a lower thermal conductivity than the second axial portion. 15. The drag bit of claim 14, wherein the second axial portion comprises a CoNi substrate comprising between 5 to 7 percent cobalt and between 1 to 2 percent nickel. 16. The drag bit of claim 14, wherein the average hard material grain size of the second axial portion is greater than the average hard material grain size of the first axial portion. 17. The drag bit of claim 10, wherein a substrate length of the at least one cutting element is greater than 12.7 mm, wherein the polycrystalline diamond table of the at least one cutting element has a table thickness, and the cutting element length of the at least one cutting element is the sum FILED ELECTRONICALLY Docket No. IS22.0299-WO-PCT of the substrate length and the table thickness, wherein the at least one cutting element substrate length is greater than 80% of the cutting element length. 18. The drag bit of claim 10, wherein the binder comprises cobalt and nickel, wherein the cobalt comprises between 5 to 10 percent by weight of the substrate, and the nickel comprises between 1 to 4 percent by weight of the substrate. 19. The drag bit of claim 18, 8, wherein the cobalt comprises less than 8 percent by weight of the substrate, the nickel comprises between 1 to 2 percent by weight of the substrate, and an average grain size of the hard material is between 6 to 8 microns 20. The drag bit of claim 10, wherein each blade comprises only a single row of cutting elements.