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WO2024199278A1 - Semiconductor process device and pneumatic valve control method therefor - Google Patents

Semiconductor process device and pneumatic valve control method therefor Download PDF

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Publication number
WO2024199278A1
WO2024199278A1 PCT/CN2024/084083 CN2024084083W WO2024199278A1 WO 2024199278 A1 WO2024199278 A1 WO 2024199278A1 CN 2024084083 W CN2024084083 W CN 2024084083W WO 2024199278 A1 WO2024199278 A1 WO 2024199278A1
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WIPO (PCT)
Prior art keywords
pneumatic valve
pneumatic
instruction
valves
action instruction
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PCT/CN2024/084083
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French (fr)
Chinese (zh)
Inventor
刘晶晶
邓晓军
刘广政
田惺哲
Original Assignee
北京北方华创微电子装备有限公司
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Publication of WO2024199278A1 publication Critical patent/WO2024199278A1/en

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/16Controlling or regulating
    • C30B25/165Controlling or regulating the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/16Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment

Definitions

  • the present application relates to but is not limited to the field of semiconductor process technology, and in particular to a semiconductor process equipment and a pneumatic valve control method thereof.
  • the epitaxial growth of silicon carbide is mainly completed by chemical vapor deposition (CVD), and the specific chemical reaction is that SiH4 (or SiHCL3 ) and C2H4 (or C3H8 ) undergo a cracking reaction at high temperature (above 1600 degrees Celsius) to generate Si atoms and C atoms, and then recombine on the surface of the wafer to generate SiC.
  • CVD chemical vapor deposition
  • the atoms of the epitaxial growth chemical reaction are input into the process chamber through the process gas, that is, as shown in FIG1, the gas ratio of the process gas (taking SiH4 and C2H4 as examples) SiH4 and C2H4 is adjusted by setting the flow value of the gas mass flow controller (MFC) to achieve the target chemical reaction in the process chamber under specific temperature, pressure and other conditions.
  • the pneumatic valves V1 and V2 shown in FIG1 are mainly used to control the corresponding process gases SiH4 and C2H4 to enter the process chamber 10 through their opening and closing .
  • the present invention provides a semiconductor process equipment and a pneumatic valve control method thereof, aiming to solve the problem that the existing pneumatic valve control method cannot well realize the simultaneous opening or closing of multiple pneumatic valves, resulting in the process gas not being able to enter the process chamber synchronously, and thus resulting in the process gas not being able to be obtained in the process chamber.
  • Full reaction greatly reduces the utilization rate of process gas and brings more technical problems of process defects to the whole process.
  • an embodiment of the present application provides a pneumatic valve control method for semiconductor process equipment, which is used to achieve synchronous opening or synchronous closing of multiple pneumatic valves of the semiconductor process equipment, and the pneumatic valve control method includes the following steps:
  • the corresponding pneumatic valve action instruction is sent to each pneumatic valve in chronological order, so as to control the multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.
  • the pneumatic valve action instruction is a pneumatic valve opening instruction or a pneumatic valve closing instruction
  • the response duration is a first response duration corresponding to the pneumatic valve opening instruction or a second response duration corresponding to the pneumatic valve closing instruction.
  • the following steps are also included:
  • a pneumatic valve action instruction set uniformly sent by a host computer is received, wherein the pneumatic valve action instruction set includes pneumatic valve action instructions of multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in a current process step.
  • the step of acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction includes:
  • the response time of each of the pneumatic valves corresponding to the pneumatic valve action instructions is found out in turn in the response time information table.
  • the response time information table records the first response time and the second response time of all pneumatic valves in the semiconductor process equipment, and the generation method of the response time information table includes the following steps:
  • the timing starts synchronously when a pneumatic valve opening instruction is issued to a target pneumatic valve, and the timing ends synchronously when the target pneumatic valve completes executing the pneumatic valve opening instruction, so as to collect and record the first response duration of the target pneumatic valve in the response duration information table;
  • the timing starts synchronously when a pneumatic valve closing instruction is issued to a target pneumatic valve, and the timing ends synchronously when the target pneumatic valve completes executing the pneumatic valve closing instruction, so as to collect and record the second response duration of the target pneumatic valve in the response duration information table.
  • the step of calculating the instruction issuance delay value of each of the pneumatic valves according to the longest response time among the response times of the plurality of pneumatic valves includes:
  • the longest response time is sequentially calculated with the response time of the plurality of pneumatic valves to use the sequentially obtained differences as delay values for sending instructions to the corresponding pneumatic valves.
  • the step of sending a delay value according to the instruction of each pneumatic valve and sending a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order to control the multiple pneumatic valves to simultaneously execute the same pneumatic valve action instruction includes:
  • the timing starts synchronously, and when the timing value is equal to the instruction sending delay value of any other pneumatic valve, the corresponding pneumatic valve action instruction is synchronously issued to the corresponding pneumatic valve to control the multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.
  • the present application provides a semiconductor process equipment, including a lower computer, a plurality of A solenoid valve group, a plurality of pneumatic valves and a process chamber with a plurality of gas pipelines, wherein the plurality of solenoid valve groups are arranged in a one-to-one correspondence with the plurality of pneumatic valves, so that each of the pneumatic valves can realize the opening or closing of a gas pipeline under the control of the corresponding solenoid valve group, and the lower computer is respectively connected to the signals of the plurality of solenoid valve groups, and the above-mentioned pneumatic valve control method is executed when the lower computer is working.
  • a response time acquisition module is further included, and the response time acquisition module is respectively connected to the lower computer and the multiple pneumatic valve signals to acquire and record the response time of each of the pneumatic valves.
  • the response time acquisition module includes a fast response unit, a timer, and a plurality of pneumatic valve state detection sensors; wherein,
  • the multiple pneumatic valve state detection sensors are respectively connected to the quick response unit signals and are arranged in the multiple pneumatic valves in a one-to-one correspondence to collect state changes of the corresponding pneumatic valves, so as to feed back corresponding feedback signals to the quick response unit when the state of the corresponding pneumatic valve changes;
  • the quick response unit is also respectively connected to the lower computer and the timer signal, so that when the lower computer sends a pneumatic valve action instruction to any of the pneumatic valves, a start signal is sent to the timer to start the timing of the timer, and when a feedback signal is received from any of the pneumatic valve status detection sensors, an end signal is sent to the timer to end the timing of the timer.
  • the present application when realizing the synchronous opening or synchronous closing of multiple pneumatic valves of semiconductor process equipment, first obtain multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtain the response time of each pneumatic valve corresponding to the pneumatic valve action instruction. Then, according to the longest response time among the response times of the multiple pneumatic valves, calculate the instruction issuance delay value of each pneumatic valve. Finally, according to the instruction issuance delay value of each pneumatic valve, send the corresponding pneumatic valve action instruction to each pneumatic valve in chronological order to control multiple pneumatic valves to simultaneously execute the same pneumatic valve action instruction. In this way, the present technical solution can change the lower computer to send the instruction by calculating the instruction issuance delay value.
  • the time when different pneumatic valves send corresponding pneumatic valve action instructions can effectively solve the problem in the existing pneumatic valve control method that different pneumatic valves have different response times, which makes it impossible to truly realize the simultaneous opening or closing of different pneumatic valves. That is, it can well realize the simultaneous opening or closing of multiple pneumatic valves, ensuring that the process gas can enter the process chamber synchronously to obtain sufficient reaction in the process chamber, thereby greatly improving the utilization rate of the process gas and improving the process quality of the entire process.
  • FIG. 1 is a schematic diagram of a gas path of a process gas in the prior art.
  • FIG. 2 is a flowchart of a pneumatic valve control method for semiconductor process equipment provided in an embodiment of the present application.
  • FIG. 3 is another flowchart of the pneumatic valve control method of the semiconductor process equipment shown in FIG. 1 .
  • FIG. 4 is a flowchart of step S110 of the pneumatic valve control method of the semiconductor process equipment shown in FIG. 1 .
  • FIG5 is a flowchart of a method for generating a response duration information table provided in an embodiment of the present application.
  • FIG. 6 is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of the present application.
  • the epitaxial growth of silicon carbide is mainly completed by vapor deposition (CVD).
  • the reaction is that SiH4 (or SiHCL3 ) and C2H4 (or C3H8 ) undergo a cracking reaction at high temperature (above 1600 degrees Celsius) to generate Si atoms and C atoms, which then recombine on the wafer surface to generate SiC.
  • the atoms of the epitaxial growth chemical reaction are input into the process chamber through the process gas, that is, as shown in FIG1, the gas ratio of the process gas (taking SiH4 and C2H4 as examples) SiH4 and C2H4 is adjusted by setting the flow value of the gas mass flow meter ( MFC ) to achieve the target chemical reaction in the process chamber under specific temperature, pressure and other conditions.
  • the pneumatic valves V1 and V2 shown in the figure are mainly used to control the corresponding process gas to enter the process chamber 10 through its opening and closing.
  • SiH4 will decompose Si atoms in this temperature range. If the number of C atoms is small at this time, Si atoms will form Si single crystals. The Si single crystals are deposited on the surface of the silicon carbide substrate, which will bring a large number of defects to the epitaxial layer of the product, and even cause the epitaxial product to be scrapped in severe cases. Therefore, in this process, it is required that the pneumatic valves V1 and V2 can shorten the opening interval time as much as possible to achieve synchronous action to ensure the full mixing of the two gases.
  • the present application provides a pneumatic valve control method for semiconductor process equipment, which is used to achieve synchronous opening or synchronous closing of multiple pneumatic valves of semiconductor process equipment.
  • the pneumatic valve control method specifically includes the following steps:
  • Step S110 acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction.
  • the embodiment of the method will first obtain the pneumatic valve action instructions that need to be executed simultaneously in the current process step before executing each process step.
  • the multiple pneumatic valves of the command are controlled, and the response time of each pneumatic valve corresponding to the pneumatic valve action command is obtained.
  • the response time specifically refers to the time taken by the lower computer to send the pneumatic valve action command to the corresponding pneumatic valve to the corresponding pneumatic valve to complete the execution of the pneumatic valve action command. It can be collected and recorded in advance and stored in the semiconductor process equipment, so that the lower computer of the semiconductor process equipment can be retrieved and used at any time.
  • the response time when the pneumatic valve executes different pneumatic valve action instructions, its response time will be slightly different, because the response time can specifically be the first response time corresponding to the pneumatic valve opening instruction or the second response time corresponding to the pneumatic valve closing instruction.
  • the first response time of each pneumatic valve can be obtained synchronously.
  • the second response time of each pneumatic valve can be obtained synchronously.
  • Step S120 Calculate the instruction sending delay value of each pneumatic valve according to the longest response time among the response times of the multiple pneumatic valves.
  • the response time of these pneumatic valves can be compared to find the longest response time and its corresponding pneumatic valve, and based on this, the instruction issuance delay value of each pneumatic valve is calculated.
  • the instruction issuance delay value specifically refers to the delay time for the lower computer to issue the corresponding pneumatic valve action instruction to each pneumatic valve that needs to execute the same pneumatic valve action instruction simultaneously with the first pneumatic valve after the lower computer issues the corresponding pneumatic valve action instruction to the first pneumatic valve.
  • this method step uses the longest response time to calculate the delay value for issuing instructions for each pneumatic valve.
  • the pneumatic valve corresponding to the longest response time takes the longest time to execute the corresponding pneumatic valve action instruction.
  • Step S130 issuing a delay value according to the instruction of each pneumatic valve, and issuing a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order, so as to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.
  • the instruction issuance delay value of each pneumatic valve can be used to issue a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order, so as to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.
  • the instruction issuance delay value of each pneumatic valve can be used to issue a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order, so as to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.
  • the pneumatic valve control method before executing the method step of the example of the present application “obtaining multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction”, the pneumatic valve control method further includes the following steps:
  • Step S100 receiving a pneumatic valve action instruction set uniformly issued by a host computer, wherein the pneumatic valve action instruction set includes pneumatic valve action instructions of multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step.
  • each process step is generally performed in sequence according to the process menu of the semiconductor process in the upper computer. Then the entire semiconductor process is completed. Therefore, before executing the semiconductor process, the host computer can first perform a preset logical judgment on the process menu of the current semiconductor process to be executed to obtain the pneumatic valve action information table in the semiconductor process.
  • the pneumatic valve action information table can be a virtual table concept or a real table.
  • the pneumatic valve action information table is a real table
  • the pneumatic valve action information table can be recorded separately according to each process step of the current semiconductor process to be executed, so as to specifically record the information of the pneumatic valve action instructions that all pneumatic valves in the semiconductor process equipment need to execute when the corresponding process steps are executed, especially multiple pneumatic valves that need to execute the same pneumatic valve action instruction at the same time in the current process step.
  • the host computer can, according to the pneumatic valve action information table, send the pneumatic valve action instruction set corresponding to the current process step to the lower computer before each process step in the semiconductor process is executed.
  • the upper computer first completes the logical judgment of all process menus to uniformly send all the pneumatic valve action instructions (i.e., the pneumatic valve action instruction set) to the lower computer, so that the lower computer can receive the pneumatic valve action instruction set uniformly sent by the upper computer.
  • the control time error caused by the sequential reception of instructions can be effectively avoided by receiving the instructions at the same time.
  • the method step of executing the example of the present application of “obtaining multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction” may specifically include:
  • Step S111 Find out the name of each pneumatic valve that needs to execute the same pneumatic valve action instruction simultaneously in the current process step according to the target pneumatic valve action instruction set.
  • Step S112 According to the name of each pneumatic valve and the pneumatic valve action index that needs to be executed simultaneously In the response time information table, find out the response time of each pneumatic valve corresponding to the pneumatic valve action instruction in turn.
  • the target pneumatic valve action instruction set can specifically include the pneumatic valve action instructions of multiple pneumatic valves that need to execute the same pneumatic valve action instruction at the same time in the current process step. Therefore, the name of each pneumatic valve that needs to execute the same pneumatic valve action instruction at the same time in the current process step can be found out according to the target pneumatic valve action instruction set. That is, in the current process step, which pneumatic valves (specifically, the names can be marked by numbers, etc.) need to execute the same pneumatic valve action instruction at the same time.
  • the response time information table After finding the names of these pneumatic valves, it is possible to further find the response time of each pneumatic valve corresponding to the pneumatic valve action instruction in the response time information table according to the name of each pneumatic valve and the pneumatic valve action instructions that need to be executed simultaneously. Based on the above, it can be known that the response time can be collected in advance and recorded and stored in the semiconductor process equipment so that the lower computer of the semiconductor process equipment can retrieve and use it at any time. In this example, it can be realized through the response time information table, that is, the response time information table records the first response time (corresponding to the pneumatic valve opening instruction) and the second response time (corresponding to the pneumatic valve closing instruction) of all pneumatic valves in the semiconductor process equipment.
  • the table can be looked up in the example of this application to better implement the method steps of the example of this application "obtaining multiple pneumatic valves that need to execute the same pneumatic valve action instruction at the same time in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction".
  • a response time collection module can be added to the semiconductor process equipment, and the response time collection module is respectively connected to the lower computer and multiple pneumatic valve signals to collect and record the response time of each pneumatic valve. Its specific structure will be described in detail below.
  • the response time collection module will perform a switch test on all pneumatic valves of the semiconductor process equipment to generate the above response time information table, including starting the timing synchronously when a pneumatic valve opening instruction is issued to the target pneumatic valve, and ending the timing synchronously when the target pneumatic valve completes the execution of the pneumatic valve opening instruction, so as to collect and record the first response time of the target pneumatic valve in the response time information table; and starting the timing synchronously when a pneumatic valve closing instruction is issued to the target pneumatic valve, and ending the timing synchronously when the target pneumatic valve completes the execution of the pneumatic valve closing instruction, so as to collect and record the second response time of the target pneumatic valve in the response time information table.
  • the response time information table accurately records the first response time (corresponding to the pneumatic valve opening instruction) and the second response time (corresponding to the pneumatic valve closing instruction) of all pneumatic valves in the semiconductor process equipment.
  • the process of executing the method step of the example of the present application "calculating the instruction issuance delay value of each pneumatic valve according to the longest response time among the response times of multiple pneumatic valves" may specifically include: performing difference calculations on the longest response time and the response times of multiple pneumatic valves in sequence, and using the differences obtained in sequence as the instruction issuance delay value of the corresponding pneumatic valve. In this way, the instruction issuance delay value of the pneumatic valve corresponding to the longest response time is 0, and the instruction issuance delay value of the pneumatic valve corresponding to the shortest response time is the longest.
  • the process of executing the method step of the example of the present application may specifically include: starting the timing synchronously when issuing a corresponding pneumatic valve action instruction to the pneumatic valve with a delay value of 0, and When the timing value is equal to the instruction sending delay value of any other pneumatic valve, the corresponding pneumatic valve action instruction is synchronously sent to the corresponding pneumatic valve to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.
  • the instruction sending delay value of the pneumatic valve corresponding to the longest response time is 0, which is the first object to which the lower computer sends a pneumatic valve action instruction
  • the instruction sending delay value of the pneumatic valve corresponding to the shortest response time is the longest, which is the last object to which the lower computer sends a pneumatic valve action instruction, that is, the above timing can end after the lower computer sends the corresponding pneumatic valve action instruction to the last pneumatic valve.
  • the present application embodiment also separately provides a semiconductor process equipment 100, which includes a lower computer 120 (specifically, it can be a PLC), multiple solenoid valve groups 130, multiple pneumatic valves 140, and a process chamber 150 with multiple gas pipelines 151.
  • the multiple solenoid valve groups 130 are arranged one-to-one with the multiple pneumatic valves 140, so that each pneumatic valve 140 can realize the opening or closing of a gas pipeline 151 under the control of the corresponding solenoid valve group 130.
  • the lower computer 120 is respectively connected to the multiple solenoid valve groups 130 by signal.
  • the lower computer 120 may include at least one processor and at least one memory, and a computer program is stored in the memory. When the lower computer 120 is working, that is, when the computer program is executed by the processor, the pneumatic valve control method in the above embodiment is realized, which will not be repeated here.
  • the semiconductor process equipment 100 may further include a host computer 110 , and the host computer 110 is signal-connected to a slave computer 120 .
  • the time for the lower computer 120 to send corresponding pneumatic valve action instructions to different pneumatic valves 140 can be changed by calculating the delay value of the instruction issuance, so as to solve the problem that the different pneumatic valves 140 cannot be opened or closed at the same time in the existing pneumatic valve control method because different pneumatic valves 140 have different response times. That is, it can well realize the simultaneous opening or closing of multiple pneumatic valves 140, ensuring that the process gas can enter the process chamber 150 synchronously. In order to obtain a sufficient reaction in the process chamber 150, the utilization rate of the process gas is greatly improved, and the process quality of the entire process is improved.
  • the response time is recorded and stored in the semiconductor process equipment 100, so that the lower computer 120 of the semiconductor process equipment 100 can be retrieved and used at any time, as shown in FIG6, the semiconductor process equipment 100 in this example further includes a response time acquisition module 160, and the response time acquisition module 160 is respectively connected to the lower computer 120 and multiple pneumatic valves 140 signals to collect and record the response time of each pneumatic valve 140.
  • the response time acquisition module may specifically include a fast response unit, a timer, and multiple pneumatic valve state detection sensors.
  • multiple pneumatic valve state detection sensors are respectively connected to the fast response unit signals, and are arranged in a one-to-one correspondence in multiple pneumatic valves 140 to collect the state changes of the corresponding pneumatic valves 140, so that when the state of the corresponding pneumatic valve 140 changes, the corresponding feedback signal is fed back to the fast response unit.
  • the quick response unit is also connected to the lower computer 120 and the timer signal respectively, so that when the lower computer 120 sends a pneumatic valve action instruction to any pneumatic valve 140, a start signal is sent to the timer to start the timer timing, and when a feedback signal from any pneumatic valve status detection sensor is received, an end signal is sent to the timer to end the timer timing.
  • the pneumatic valve state detection sensor can feedback the opening and closing states of the corresponding pneumatic valve 140.
  • the state signal of the pneumatic valve state detection sensor will change.
  • the feedback signal of the pneumatic valve state detection sensor is received by the rapid response unit (since the rapid response unit has a high receiving frequency, generally up to tens of Hz, the signal acquisition error is almost negligible), and the timer is terminated, which can well realize the response time collection of the corresponding pneumatic valve 140.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more features. In the description of the present application, the meaning of “multiple” is two or more, unless otherwise clearly and specifically defined.
  • the word "exemplary” is used to mean “used as an example, illustration, or description.” Any embodiment described in this application as “exemplary” is not necessarily to be construed as being more preferred or more advantageous than other embodiments.
  • the present application provides the above description. In the above description, various details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present application can be implemented without using these specific details. In other embodiments, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present application with unnecessary details. Therefore, the present application does not describe the present invention in detail.
  • the present disclosure is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

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Abstract

The present application belongs to semiconductor process technology. Disclosed are a semiconductor process device and a pneumatic valve control method therefor. The pneumatic valve control method comprises the following steps: acquiring a plurality of pneumatic valves in the current process step that need to simultaneously execute the same pneumatic valve action instruction, and obtaining a response duration of each pneumatic valve that corresponds to the pneumatic valve action instruction; according to the maximum response duration from among response durations of the plurality of pneumatic valves, calculating an instruction issuance delay value of each pneumatic valve; and according to the instruction issuance delay value of each pneumatic valve, sending the corresponding pneumatic valve action instruction to each pneumatic valve in chronological order, so as to control the plurality of pneumatic valves to simultaneously execute the same pneumatic valve action instruction. The technical solution can well realize the simultaneous opening or simultaneous closing of a plurality of pneumatic valves, and ensure that process gases can synchronously enter a process chamber, such that the process gases can be fully reacted in the process chamber, thereby improving the process quality of an entire process while greatly improving the utilization rate of the process gases.

Description

半导体工艺设备及其气动阀控制方法Semiconductor process equipment and pneumatic valve control method thereof 技术领域Technical Field

本申请涉及但不限于半导体工艺技术领域,尤其涉及一种半导体工艺设备及其气动阀控制方法。The present application relates to but is not limited to the field of semiconductor process technology, and in particular to a semiconductor process equipment and a pneumatic valve control method thereof.

背景技术Background Art

目前碳化硅的外延生长主要是采用化学气相沉积(Chemical Vapor Deposition简称CVD)法完成,具体化学反应是SiH4(或SiHCL3)与C2H4(或C3H8)在高温下(1600摄氏度以上)发生裂解反应生成Si原子和C原子,然后在晶片表面重新结合生成SiC。外延生长化学反应的原子通过工艺气体输入工艺腔室内部,即如图1所示,通过设定气体质量流量计(Mass Flow Controller,简称MFC)的流量值调整工艺气体(以SiH4、C2H4为例)SiH4和C2H4的气体比例,以在特定的温度、压力等条件下实现工艺腔室内目标化学反应,图1中所示气动阀V1和V2主要用于通过其开启与关闭控制相应的工艺气体SiH4和C2H4进入工艺腔室10中。At present, the epitaxial growth of silicon carbide is mainly completed by chemical vapor deposition (CVD), and the specific chemical reaction is that SiH4 (or SiHCL3 ) and C2H4 (or C3H8 ) undergo a cracking reaction at high temperature (above 1600 degrees Celsius) to generate Si atoms and C atoms, and then recombine on the surface of the wafer to generate SiC. The atoms of the epitaxial growth chemical reaction are input into the process chamber through the process gas, that is, as shown in FIG1, the gas ratio of the process gas (taking SiH4 and C2H4 as examples) SiH4 and C2H4 is adjusted by setting the flow value of the gas mass flow controller (MFC) to achieve the target chemical reaction in the process chamber under specific temperature, pressure and other conditions. The pneumatic valves V1 and V2 shown in FIG1 are mainly used to control the corresponding process gases SiH4 and C2H4 to enter the process chamber 10 through their opening and closing .

然而,现有的气动阀控制方法中,会因不同的气动阀响应时长不同,而导致不同的工艺气体不能同步进入工艺腔室,进而导致工艺气体无法在工艺腔室中得到充分反应,大大降低工艺气体的利用率的同时,还给整个工艺过程带来更多工艺缺陷。However, in the existing pneumatic valve control method, different pneumatic valves have different response times, which causes different process gases to fail to enter the process chamber synchronously, resulting in the process gas being unable to fully react in the process chamber, greatly reducing the utilization rate of the process gas and bringing more process defects to the entire process.

发明内容Summary of the invention

本申请实施例提供一种半导体工艺设备及其气动阀控制方法,旨在解决现有气动阀控制方法无法很好地实现多个气动阀同时开启或同时关闭,导致工艺气体不能同步进入工艺腔室,进而导致工艺气体无法在工艺腔室中得到 充分反应,大大降低工艺气体的利用率的同时,给整个工艺过程带来更多工艺缺陷的技术问题。The present invention provides a semiconductor process equipment and a pneumatic valve control method thereof, aiming to solve the problem that the existing pneumatic valve control method cannot well realize the simultaneous opening or closing of multiple pneumatic valves, resulting in the process gas not being able to enter the process chamber synchronously, and thus resulting in the process gas not being able to be obtained in the process chamber. Full reaction greatly reduces the utilization rate of process gas and brings more technical problems of process defects to the whole process.

第一方面,本申请实施例提供一种半导体工艺设备的气动阀控制方法,用于实现所述半导体工艺设备的多个气动阀的同步开启或同步关闭,所述气动阀控制方法包括以下步骤:In a first aspect, an embodiment of the present application provides a pneumatic valve control method for semiconductor process equipment, which is used to achieve synchronous opening or synchronous closing of multiple pneumatic valves of the semiconductor process equipment, and the pneumatic valve control method includes the following steps:

获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个所述气动阀对应所述气动阀动作指令的响应时长;Acquire multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtain the response time of each pneumatic valve corresponding to the pneumatic valve action instruction;

根据所述多个气动阀的响应时长中的最长响应时长,计算每个所述气动阀的指令下发延时值;Calculating a command sending delay value for each of the pneumatic valves according to the longest response time among the response times of the plurality of pneumatic valves;

根据每个所述气动阀的指令下发延时值,按时间先后顺序向每个所述气动阀发出相应的所述气动阀动作指令,以控制所述多个气动阀同时执行完同一所述气动阀动作指令。According to the delay value of each pneumatic valve instruction, the corresponding pneumatic valve action instruction is sent to each pneumatic valve in chronological order, so as to control the multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.

可选的,在一些实施例中,所述气动阀动作指令为气动阀开启指令或气动阀关闭指令;所述响应时长为对应所述气动阀开启指令的第一响应时长或对应所述气动阀关闭指令的第二响应时长。Optionally, in some embodiments, the pneumatic valve action instruction is a pneumatic valve opening instruction or a pneumatic valve closing instruction; the response duration is a first response duration corresponding to the pneumatic valve opening instruction or a second response duration corresponding to the pneumatic valve closing instruction.

可选的,在一些实施例中,所述获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个所述气动阀对应所述气动阀动作指令的响应时长的步骤之前,还包括以下步骤:Optionally, in some embodiments, before the step of acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction, the following steps are also included:

接收上位机统一下发的气动阀动作指令集,所述气动阀动作指令集包括当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀的气动阀动作指令。A pneumatic valve action instruction set uniformly sent by a host computer is received, wherein the pneumatic valve action instruction set includes pneumatic valve action instructions of multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in a current process step.

可选的,在一些实施例中,所述获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个所述气动阀对应所述气动阀动作指令的响应时长的步骤包括:Optionally, in some embodiments, the step of acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction includes:

根据所述目标气动阀动作指令集找出当前工艺步骤中需要同时执行完 同一气动阀动作指令的每个所述气动阀的名称;According to the target pneumatic valve action instruction set, find out the current process steps that need to be executed simultaneously The name of each pneumatic valve of the same pneumatic valve action instruction;

根据每个所述气动阀的名称及当前需同时执行的气动阀动作指令,在响应时长信息表中,依次找出每个所述气动阀对应所述气动阀动作指令的响应时长。According to the name of each of the pneumatic valves and the pneumatic valve action instructions that need to be executed simultaneously, the response time of each of the pneumatic valves corresponding to the pneumatic valve action instructions is found out in turn in the response time information table.

可选的,在一些实施例中,所述响应时长信息表中记录有半导体工艺设备中所有气动阀的第一响应时长和第二响应时长,所述响应时长信息表的生成方式包括以下步骤:Optionally, in some embodiments, the response time information table records the first response time and the second response time of all pneumatic valves in the semiconductor process equipment, and the generation method of the response time information table includes the following steps:

在向目标气动阀发出气动阀开启指令时同步开始计时,并在所述目标气动阀执行完所述气动阀开启指令时同步结束计时,以采集并在所述响应时长信息表中记录所述目标气动阀的第一响应时长;The timing starts synchronously when a pneumatic valve opening instruction is issued to a target pneumatic valve, and the timing ends synchronously when the target pneumatic valve completes executing the pneumatic valve opening instruction, so as to collect and record the first response duration of the target pneumatic valve in the response duration information table;

在向目标气动阀发出气动阀关闭指令时同步开始计时,并在所述目标气动阀执行完所述气动阀关闭指令时同步结束计时,以采集并在所述响应时长信息表中记录所述目标气动阀的第二响应时长。The timing starts synchronously when a pneumatic valve closing instruction is issued to a target pneumatic valve, and the timing ends synchronously when the target pneumatic valve completes executing the pneumatic valve closing instruction, so as to collect and record the second response duration of the target pneumatic valve in the response duration information table.

可选的,在一些实施例中,所述根据所述多个气动阀的响应时长中的最长响应时长,计算每个所述气动阀的指令下发延时值的步骤包括:Optionally, in some embodiments, the step of calculating the instruction issuance delay value of each of the pneumatic valves according to the longest response time among the response times of the plurality of pneumatic valves includes:

将所述最长响应时长依次与所述多个气动阀的响应时长进行差值运算,以将依次得到的差值作为对应的所述气动阀的指令下发延时值。The longest response time is sequentially calculated with the response time of the plurality of pneumatic valves to use the sequentially obtained differences as delay values for sending instructions to the corresponding pneumatic valves.

可选的,在一些实施例中,所述根据每个所述气动阀的指令下发延时值,按时间先后顺序向每个所述气动阀发出相应的所述气动阀动作指令,以控制所述多个气动阀同时执行完同一所述气动阀动作指令的步骤包括:Optionally, in some embodiments, the step of sending a delay value according to the instruction of each pneumatic valve and sending a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order to control the multiple pneumatic valves to simultaneously execute the same pneumatic valve action instruction includes:

在向所述指令下发延时值为0的所述气动阀发出相应的所述气动阀动作指令时同步开始计时,并在所述计时的计时值等于其余任一所述气动阀的指令下发延时值时,同步向对应的所述气动阀发出相应的所述气动阀动作指令,以控制所述多个气动阀同时执行完同一所述气动阀动作指令。When the corresponding pneumatic valve action instruction is issued to the pneumatic valve with the instruction sending delay value of 0, the timing starts synchronously, and when the timing value is equal to the instruction sending delay value of any other pneumatic valve, the corresponding pneumatic valve action instruction is synchronously issued to the corresponding pneumatic valve to control the multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.

第二方面,本申请实施例提供一种半导体工艺设备,包括下位机、多个 电磁阀组、多个气动阀以及具有多个气体管路的工艺腔室,所述多个电磁阀组与所述多个气动阀一一对应设置,使得每个所述气动阀可在对应的所述电磁阀组的控制下实现一个所述气体管路的开启或关闭,所述下位机分别与所述多个电磁阀组信号连接,所述下位机工作时执行上述的气动阀控制方法。In a second aspect, the present application provides a semiconductor process equipment, including a lower computer, a plurality of A solenoid valve group, a plurality of pneumatic valves and a process chamber with a plurality of gas pipelines, wherein the plurality of solenoid valve groups are arranged in a one-to-one correspondence with the plurality of pneumatic valves, so that each of the pneumatic valves can realize the opening or closing of a gas pipeline under the control of the corresponding solenoid valve group, and the lower computer is respectively connected to the signals of the plurality of solenoid valve groups, and the above-mentioned pneumatic valve control method is executed when the lower computer is working.

可选的,在一些实施例中,还包括响应时长采集模块,所述响应时长采集模块分别与所述下位机及所述多个气动阀信号连接,以采集并记录每个所述气动阀的响应时长。Optionally, in some embodiments, a response time acquisition module is further included, and the response time acquisition module is respectively connected to the lower computer and the multiple pneumatic valve signals to acquire and record the response time of each of the pneumatic valves.

可选的,在一些实施例中,所述响应时长采集模块包括快速响应单元、计时器以及多个气动阀状态检测传感器;其中,Optionally, in some embodiments, the response time acquisition module includes a fast response unit, a timer, and a plurality of pneumatic valve state detection sensors; wherein,

所述多个气动阀状态检测传感器,分别与所述快速响应单元信号连接,并一一对应设置于所述多个气动阀中,以采集对应的所述气动阀的状态变化,以在对应的所述气动阀的状态发生变化时,将相应的反馈信号反馈给所述快速响应单元;The multiple pneumatic valve state detection sensors are respectively connected to the quick response unit signals and are arranged in the multiple pneumatic valves in a one-to-one correspondence to collect state changes of the corresponding pneumatic valves, so as to feed back corresponding feedback signals to the quick response unit when the state of the corresponding pneumatic valve changes;

所述快速响应单元,还分别与所述下位机及所述计时器信号连接,以在所述下位机向任一所述气动阀发出气动阀动作指令时,对所述计时器发出启动信号,以启动所述计时器的计时,及在接收到任一所述气动阀状态检测传感器反馈的反馈信号时,对所述计时器发出结束信号,以结束所述计时器的计时。The quick response unit is also respectively connected to the lower computer and the timer signal, so that when the lower computer sends a pneumatic valve action instruction to any of the pneumatic valves, a start signal is sent to the timer to start the timing of the timer, and when a feedback signal is received from any of the pneumatic valve status detection sensors, an end signal is sent to the timer to end the timing of the timer.

在本申请中,其在实现半导体工艺设备的多个气动阀的同步开启或同步关闭时,先获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长。再根据多个气动阀的响应时长中的最长响应时长,计算每个气动阀的指令下发延时值。最后,根据每个气动阀的指令下发延时值,按时间先后顺序向每个气动阀发出相应的气动阀动作指令,以控制多个气动阀同时执行完同一气动阀动作指令。这样一来,本技术方案,其可通过指令下发延时值的计算,来改变下位机向 不同的气动阀发出相应的气动阀动作指令的时间,以很好地解决现有气动阀控制方法中由于不同的气动阀具有不同的响应时长而导致无法真正实现不同的气动阀同时开启或同时关闭的问题,即其可很好地实现多个气动阀同时开启或同时关闭,确保工艺气体能同步进入工艺腔室,以在工艺腔室中得到充分反应,进而大大提升工艺气体的利用率的同时,提高整个工艺过程的工艺质量。In the present application, when realizing the synchronous opening or synchronous closing of multiple pneumatic valves of semiconductor process equipment, first obtain multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtain the response time of each pneumatic valve corresponding to the pneumatic valve action instruction. Then, according to the longest response time among the response times of the multiple pneumatic valves, calculate the instruction issuance delay value of each pneumatic valve. Finally, according to the instruction issuance delay value of each pneumatic valve, send the corresponding pneumatic valve action instruction to each pneumatic valve in chronological order to control multiple pneumatic valves to simultaneously execute the same pneumatic valve action instruction. In this way, the present technical solution can change the lower computer to send the instruction by calculating the instruction issuance delay value. The time when different pneumatic valves send corresponding pneumatic valve action instructions can effectively solve the problem in the existing pneumatic valve control method that different pneumatic valves have different response times, which makes it impossible to truly realize the simultaneous opening or closing of different pneumatic valves. That is, it can well realize the simultaneous opening or closing of multiple pneumatic valves, ensuring that the process gas can enter the process chamber synchronously to obtain sufficient reaction in the process chamber, thereby greatly improving the utilization rate of the process gas and improving the process quality of the entire process.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

下面结合附图,通过对本申请的具体实施方式详细描述,将使本申请的技术方案及其有益效果显而易见。The technical solution and beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

图1是现有技术工艺气体的气路示意图。FIG. 1 is a schematic diagram of a gas path of a process gas in the prior art.

图2是本申请实施例提供的半导体工艺设备的气动阀控制方法的流程框图。FIG. 2 is a flowchart of a pneumatic valve control method for semiconductor process equipment provided in an embodiment of the present application.

图3是图1所示半导体工艺设备的气动阀控制方法的另一种流程框图。FIG. 3 is another flowchart of the pneumatic valve control method of the semiconductor process equipment shown in FIG. 1 .

图4是图1所示半导体工艺设备的气动阀控制方法的步骤S110的流程框图。FIG. 4 is a flowchart of step S110 of the pneumatic valve control method of the semiconductor process equipment shown in FIG. 1 .

图5是本申请实施例提供的响应时长信息表生成方法的流程框图。FIG5 is a flowchart of a method for generating a response duration information table provided in an embodiment of the present application.

图6是本申请实施例提供的半导体工艺设备的结构示意图。FIG. 6 is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of the present application.

具体实施方式DETAILED DESCRIPTION

下面结合附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本申请一部分实施例,而非全部实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。在不冲突的情况下,下述各个实施例及其技术特征可以相互组合。The technical solutions in the embodiments of the present application are clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In the absence of conflict, the following embodiments and their technical features can be combined with each other.

目前碳化硅的外延生长主要是采用气相沉积(CVD)法完成,具体化学 反应是SiH4(或SiHCL3)与C2H4(或C3H8)在高温下(1600摄氏度以上)发生裂解反应生成Si原子和C原子,然后在晶片表面重新结合生成SiC。外延生长化学反应的原子通过工艺气体输入工艺腔室内部,即如图1所示,通过设定气体质量流量计(MFC)的流量值调整工艺气体(以SiH4、C2H4为例)SiH4和C2H4的气体比例,以在特定的温度、压力等条件下实现工艺腔室内目标化学反应,图中所示气动阀V1和V2主要用于通过其开启与关闭控制相应的工艺气体进入工艺腔室10中。At present, the epitaxial growth of silicon carbide is mainly completed by vapor deposition (CVD). The reaction is that SiH4 (or SiHCL3 ) and C2H4 (or C3H8 ) undergo a cracking reaction at high temperature (above 1600 degrees Celsius) to generate Si atoms and C atoms, which then recombine on the wafer surface to generate SiC. The atoms of the epitaxial growth chemical reaction are input into the process chamber through the process gas, that is, as shown in FIG1, the gas ratio of the process gas (taking SiH4 and C2H4 as examples) SiH4 and C2H4 is adjusted by setting the flow value of the gas mass flow meter ( MFC ) to achieve the target chemical reaction in the process chamber under specific temperature, pressure and other conditions. The pneumatic valves V1 and V2 shown in the figure are mainly used to control the corresponding process gas to enter the process chamber 10 through its opening and closing.

由于在工艺过程中,碳化硅的化学反应温度通常为1500℃~1800℃,在此温度区间内,SiH4会分解出Si原子,若此时C原子数量较少,Si原子会形成Si单晶,Si单晶沉积在碳化硅衬底表面给产品的外延层带来大量的缺陷,严重时甚至导致外延产品报废,因而,在该工艺过程中就要求气动阀V1和V2能够尽量缩短开启间隔时间,实现同步动作,以保证两种气体的充分混合。然而,现有的气动阀控制方法中,不同的气动阀是由上位机依次下发指令到PLC后,再由PLC同时输出控制指令到不同的气动阀对应的不同的电磁阀组,以使得不同的电磁阀组在接到该控制指令后通过CDN(压缩氮气)驱动对应的气动阀执行开关工作。在此过程中,由于控制指令传输路径不同,导致不同的电磁阀组接收到的控制指令存在一定的时间误差,以及不同的电磁阀组到对应的气动阀的气管长短不一,导致不同的电磁阀组之间的硬件动作也会存在不同步的情形,这些均会最终导致不同的气动阀最终执行开关动作存在一定时间误差,即不同的气动阀会具有不同的响应时长,导致相关技术的气动阀控制方法无法真正实现不同的气动阀同时开启或同时关闭,导致不同工艺气体不能同步进入工艺腔室,进而导致工艺气体无法在工艺腔室中得到充分反应,大大降低工艺气体的利用率的同时,给整个工艺过程带来更多工艺缺陷。Since the chemical reaction temperature of silicon carbide is usually 1500℃~1800℃ in the process, SiH4 will decompose Si atoms in this temperature range. If the number of C atoms is small at this time, Si atoms will form Si single crystals. The Si single crystals are deposited on the surface of the silicon carbide substrate, which will bring a large number of defects to the epitaxial layer of the product, and even cause the epitaxial product to be scrapped in severe cases. Therefore, in this process, it is required that the pneumatic valves V1 and V2 can shorten the opening interval time as much as possible to achieve synchronous action to ensure the full mixing of the two gases. However, in the existing pneumatic valve control method, different pneumatic valves are sent by the host computer to the PLC in sequence, and then the PLC simultaneously outputs control instructions to different solenoid valve groups corresponding to different pneumatic valves, so that different solenoid valve groups drive the corresponding pneumatic valves through CDN (compressed nitrogen) to perform switching after receiving the control instructions. In this process, due to the different control instruction transmission paths, there is a certain time error in the control instructions received by different solenoid valve groups, and the air pipes from different solenoid valve groups to the corresponding pneumatic valves are of different lengths, resulting in the hardware actions between different solenoid valve groups being asynchronous. These will ultimately lead to a certain time error in the final switching actions of different pneumatic valves, that is, different pneumatic valves will have different response times, resulting in the pneumatic valve control method of related technology being unable to truly achieve the simultaneous opening or closing of different pneumatic valves, resulting in different process gases being unable to enter the process chamber synchronously, and then resulting in the process gas being unable to fully react in the process chamber, greatly reducing the utilization rate of the process gas and bringing more process defects to the entire process.

基于此,有必要提供一种新的气动阀控制方法的解决方案,以解决现有 气动阀控制方法无法很好地实现多个气动阀同时开启或同时关闭,导致工艺气体不能同步进入工艺腔室,进而导致工艺气体无法在工艺腔室中得到充分反应,大大降低工艺气体的利用率的同时,给整个工艺过程带来更多工艺缺陷的技术问题。Based on this, it is necessary to provide a new solution for pneumatic valve control method to solve the existing The pneumatic valve control method cannot effectively realize the simultaneous opening or closing of multiple pneumatic valves, resulting in the process gas being unable to enter the process chamber synchronously, which in turn causes the process gas to be unable to fully react in the process chamber, greatly reducing the utilization rate of the process gas and bringing more technical problems of process defects to the entire process.

在一个实施例中,如图2所示,本申请实施例提供一种半导体工艺设备的气动阀控制方法,用于实现半导体工艺设备的多个气动阀的同步开启或同步关闭,该气动阀控制方法具体包括以下步骤:In one embodiment, as shown in FIG. 2 , the present application provides a pneumatic valve control method for semiconductor process equipment, which is used to achieve synchronous opening or synchronous closing of multiple pneumatic valves of semiconductor process equipment. The pneumatic valve control method specifically includes the following steps:

步骤S110:获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长。Step S110: acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction.

可以理解的是,在半导体工艺设备进行诸如碳化硅的外延生长等半导体工艺时,其需要向工艺腔室中通入多种不同的工艺气体,不同的工艺气体一般通过不同的气体管路通入工艺腔室中,而为了更好地控制不同的工艺气体的通入流量及通入时间,不同的气体管路中均会设置有相应的气动阀,以实现相应的气体管路的开关控制,进而向工艺腔室通入相应的工艺气体或中断相应的工艺气体通入工艺腔室。可见,半导体工艺设备中一般会设置有多个不同的气动阀,不同的气动阀可控制不同的工艺气体通入工艺腔室的状态。因而,在半导体工艺设备进行半导体工艺过程中,面对不同的工艺步骤,其需根据当前工艺需要,通过下位机(具体可为PLC)给不同的气动阀发出相应的气动阀动作指令,以给工艺腔室通入满足当前工艺需求的工艺气体,这其中便会涉及某些不同的气动阀在某一工艺步骤中需要同时开启或同时关闭的情形,即需要这些不同的气动阀同时执行完同一气动阀动作指令,该气动阀动作指令具体可以是气动阀开启指令或气动阀关闭指令。而基于前述可知,由于各种因素的影响,不同的气动阀会具有不同的响应时长,这会对不同的气动阀同时开启或同时关闭带来严重的影响,为此,本方法实施例会在执行每个工艺步骤前,先获取当前工艺步骤中需要同时执行完同一气动阀动作指 令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长。该响应时长具体指下位机向相应的气动阀发出气动阀动作指令到相应的气动阀执行完该气动阀动作指令所用的时长,其可通过提前采集并记录存储在半导体工艺设备中,以供半导体工艺设备的下位机随时调取使用。It is understandable that when semiconductor process equipment is performing semiconductor processes such as epitaxial growth of silicon carbide, it is necessary to introduce a variety of different process gases into the process chamber. Different process gases are generally introduced into the process chamber through different gas pipelines. In order to better control the flow rate and introduction time of different process gases, corresponding pneumatic valves are provided in different gas pipelines to achieve the switch control of the corresponding gas pipelines, thereby introducing the corresponding process gas into the process chamber or interrupting the introduction of the corresponding process gas into the process chamber. It can be seen that semiconductor process equipment is generally provided with a plurality of different pneumatic valves, and different pneumatic valves can control the state of different process gases entering the process chamber. Therefore, in the process of semiconductor process equipment carrying out semiconductor process, facing different process steps, it is necessary to issue corresponding pneumatic valve action instructions to different pneumatic valves through the lower computer (specifically, PLC) according to the current process requirements, so as to introduce process gases that meet the current process requirements into the process chamber. This will involve the situation where some different pneumatic valves need to be opened or closed at the same time in a certain process step, that is, these different pneumatic valves need to execute the same pneumatic valve action instruction at the same time, and the pneumatic valve action instruction can specifically be a pneumatic valve opening instruction or a pneumatic valve closing instruction. Based on the above, it can be seen that due to the influence of various factors, different pneumatic valves will have different response times, which will have a serious impact on the simultaneous opening or closing of different pneumatic valves. For this reason, the embodiment of the method will first obtain the pneumatic valve action instructions that need to be executed simultaneously in the current process step before executing each process step. The multiple pneumatic valves of the command are controlled, and the response time of each pneumatic valve corresponding to the pneumatic valve action command is obtained. The response time specifically refers to the time taken by the lower computer to send the pneumatic valve action command to the corresponding pneumatic valve to the corresponding pneumatic valve to complete the execution of the pneumatic valve action command. It can be collected and recorded in advance and stored in the semiconductor process equipment, so that the lower computer of the semiconductor process equipment can be retrieved and used at any time.

另外,由于气动阀执行不同的气动阀动作指令时,其响应时长也会略有不同,因为,响应时长具体可以为对应气动阀开启指令的第一响应时长或对应气动阀关闭指令的第二响应时长。此时,当前工艺步骤中多个气动阀需要同时执行的同一气动阀动作指令为气动阀开启指令时,其可同步得到每个气动阀的第一响应时长。当前工艺步骤中多个气动阀需要同时执行的同一气动阀动作指令为气动阀关闭指令时,其可同步得到每个气动阀的第二响应时长。In addition, when the pneumatic valve executes different pneumatic valve action instructions, its response time will be slightly different, because the response time can specifically be the first response time corresponding to the pneumatic valve opening instruction or the second response time corresponding to the pneumatic valve closing instruction. At this time, when the same pneumatic valve action instruction that multiple pneumatic valves need to execute simultaneously in the current process step is a pneumatic valve opening instruction, the first response time of each pneumatic valve can be obtained synchronously. When the same pneumatic valve action instruction that multiple pneumatic valves need to execute simultaneously in the current process step is a pneumatic valve closing instruction, the second response time of each pneumatic valve can be obtained synchronously.

步骤S120:根据多个气动阀的响应时长中的最长响应时长,计算每个气动阀的指令下发延时值。Step S120: Calculate the instruction sending delay value of each pneumatic valve according to the longest response time among the response times of the multiple pneumatic valves.

可以理解的是,当通过上述方法步骤得到在当前工艺步骤中需要同时执行完同一气动阀动作指令的每个气动阀的响应时长(第一响应时长或第二响应时长)后,可对这些气动阀的响应时长进行时间长短比较,以找出最长响应时长及其对应的气动阀,并以此为基准,计算每个气动阀的指令下发延时值,该指令下发延时值具体指在下位机向第一个气动阀发出相应的气动阀动作指令后,再对需要与该第一个气动阀同时执行完同一气动阀动作指令的每个气动阀发出相应的气动阀动作指令的延时时间。本方法步骤以最长响应时长计算每个气动阀的指令下发延时值的原因在于,最长响应时长对应的气动阀执行完相应的气动阀动作指令的耗时最长,为确保这些气动阀能在同一时间执行完同一气动阀动作指令,需以最长响应时长对应的气动阀的耗时为基准,延长其它气动阀执行完相应的气动阀动作指令的时长,即将其它气动阀执行完相应的气动阀动作指令的结束时间点也调整为最长响应时长对应的气动阀执行完相应的气动阀动作指令的结束时间点。 It can be understood that after the response time (first response time or second response time) of each pneumatic valve that needs to simultaneously execute the same pneumatic valve action instruction in the current process step is obtained through the above-mentioned method steps, the response time of these pneumatic valves can be compared to find the longest response time and its corresponding pneumatic valve, and based on this, the instruction issuance delay value of each pneumatic valve is calculated. The instruction issuance delay value specifically refers to the delay time for the lower computer to issue the corresponding pneumatic valve action instruction to each pneumatic valve that needs to execute the same pneumatic valve action instruction simultaneously with the first pneumatic valve after the lower computer issues the corresponding pneumatic valve action instruction to the first pneumatic valve. The reason why this method step uses the longest response time to calculate the delay value for issuing instructions for each pneumatic valve is that the pneumatic valve corresponding to the longest response time takes the longest time to execute the corresponding pneumatic valve action instruction. To ensure that these pneumatic valves can execute the same pneumatic valve action instruction at the same time, it is necessary to use the time taken by the pneumatic valve corresponding to the longest response time as a benchmark to extend the time taken by other pneumatic valves to execute the corresponding pneumatic valve action instructions, that is, the end time point for other pneumatic valves to execute the corresponding pneumatic valve action instructions is also adjusted to the end time point for the pneumatic valve corresponding to the longest response time to execute the corresponding pneumatic valve action instruction.

步骤S130:根据每个气动阀的指令下发延时值,按时间先后顺序向每个气动阀发出相应的气动阀动作指令,以控制多个气动阀同时执行完同一气动阀动作指令。Step S130: issuing a delay value according to the instruction of each pneumatic valve, and issuing a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order, so as to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time.

可以理解的是,当通过上述方法步骤得到每个气动阀的指令下发延时值时,即可根据每个气动阀的指令下发延时值,按时间先后顺序向每个气动阀发出相应的气动阀动作指令,以控制多个气动阀同时执行完同一气动阀动作指令。通过使向每个气动阀发出相应的气动阀动作指令的开始时间点存在差异,可以对不同的气动阀执行完相应的气动阀动作指令的耗时差异进行补偿,以实现不同的气动阀执行完相应的气动阀动作指令的结束时间点一致。It is understandable that when the instruction issuance delay value of each pneumatic valve is obtained through the above method steps, the instruction issuance delay value of each pneumatic valve can be used to issue a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order, so as to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time. By making the starting time point of issuing the corresponding pneumatic valve action instruction to each pneumatic valve different, the time difference of different pneumatic valves executing the corresponding pneumatic valve action instruction can be compensated, so as to achieve the same end time point of different pneumatic valves executing the corresponding pneumatic valve action instruction.

这样一来,在本申请实施例中,其可通过指令下发延时值的计算,来改变下位机向不同的气动阀发出相应的气动阀动作指令的时间,以很好地解决相关技术中气动阀控制方法中由于不同的气动阀具有不同的响应时长而导致无法真正实现不同的气动阀同时开启或同时关闭的问题,即其可很好地实现多个气动阀同时开启或同时关闭,确保工艺气体能同步进入工艺腔室,以在工艺腔室中得到充分反应,进而大大提升工艺气体的利用率的同时,提高整个工艺过程的工艺质量。In this way, in the embodiment of the present application, it is possible to change the time when the lower computer sends corresponding pneumatic valve action instructions to different pneumatic valves by calculating the delay value of the instruction issuance, so as to effectively solve the problem that in the pneumatic valve control method in the related technology, different pneumatic valves have different response times, which makes it impossible to truly realize the simultaneous opening or closing of different pneumatic valves. That is, it can well realize the simultaneous opening or closing of multiple pneumatic valves, ensure that the process gas can enter the process chamber synchronously, so as to be fully reacted in the process chamber, thereby greatly improving the utilization rate of the process gas while improving the process quality of the entire process.

在一些示例中,如图3所示,在执行本申请示例的方法步骤“获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长”之前,本气动阀控制方法还包括以下步骤:In some examples, as shown in FIG3 , before executing the method step of the example of the present application “obtaining multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction”, the pneumatic valve control method further includes the following steps:

步骤S100:接收上位机统一下发的气动阀动作指令集,该气动阀动作指令集包括当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀的气动阀动作指令。Step S100: receiving a pneumatic valve action instruction set uniformly issued by a host computer, wherein the pneumatic valve action instruction set includes pneumatic valve action instructions of multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step.

可以理解的是,在半导体工艺设备的下位机进行半导体工艺过程中,其一般是按照上位机中关于半导体工艺的工艺菜单来依次执行各个工艺步骤, 进而完成整个半导体工艺的,因而,可在执行的半导体工艺前,先通过上位机对当前待执行的半导体工艺的工艺菜单进行预设逻辑判断,来得到半导体工艺中的气动阀动作信息表,该气动阀动作信息表既可以是一个虚拟的表格概念,也可以是一个真实的表格,当该气动阀动作信息表为一个真实的表格时,该气动阀动作信息表可根据当前待执行的半导体工艺的各个工艺步骤进行分别记录,以具体记录有相应工艺步骤执行时,半导体工艺设备中所有气动阀需执行的气动阀动作指令的信息,尤其涉及当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀。当得到气动阀动作信息表后,上位机便可根据气动阀动作信息表,在半导体工艺中的每一工艺步骤执行前,将当前工艺步骤对应的气动阀动作指令集统一下发至下位机中。It is understandable that, during the semiconductor process performed by the lower computer of the semiconductor process equipment, each process step is generally performed in sequence according to the process menu of the semiconductor process in the upper computer. Then the entire semiconductor process is completed. Therefore, before executing the semiconductor process, the host computer can first perform a preset logical judgment on the process menu of the current semiconductor process to be executed to obtain the pneumatic valve action information table in the semiconductor process. The pneumatic valve action information table can be a virtual table concept or a real table. When the pneumatic valve action information table is a real table, the pneumatic valve action information table can be recorded separately according to each process step of the current semiconductor process to be executed, so as to specifically record the information of the pneumatic valve action instructions that all pneumatic valves in the semiconductor process equipment need to execute when the corresponding process steps are executed, especially multiple pneumatic valves that need to execute the same pneumatic valve action instruction at the same time in the current process step. After obtaining the pneumatic valve action information table, the host computer can, according to the pneumatic valve action information table, send the pneumatic valve action instruction set corresponding to the current process step to the lower computer before each process step in the semiconductor process is executed.

这样一来,在执行本申请示例的方法步骤“获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长”之前,便可先接收上位机统一下发的气动阀动作指令集,该气动阀动作指令集包括当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀的气动阀动作指令。In this way, before executing the method steps of the example of this application "obtaining multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction", you can first receive the pneumatic valve action instruction set uniformly issued by the upper computer, and the pneumatic valve action instruction set includes the pneumatic valve action instructions of multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step.

可见,在本申请示例的方法步骤中,其上位机通过先完成所有工艺菜单的逻辑判断,以将所有的气动阀动作指令(即气动阀动作指令集)统一下发至下位机,即使得下位机可接收上位机统一下发的气动阀动作指令集,如此可通过指令的同时接收,有效避免因指令依次接收引起的控制时间误差。It can be seen that in the method steps of the example of the present application, the upper computer first completes the logical judgment of all process menus to uniformly send all the pneumatic valve action instructions (i.e., the pneumatic valve action instruction set) to the lower computer, so that the lower computer can receive the pneumatic valve action instruction set uniformly sent by the upper computer. In this way, the control time error caused by the sequential reception of instructions can be effectively avoided by receiving the instructions at the same time.

在一些示例中,如图4所示,执行本申请示例的方法步骤“获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长”可具体包括:In some examples, as shown in FIG. 4 , the method step of executing the example of the present application of “obtaining multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction” may specifically include:

步骤S111:根据目标气动阀动作指令集找出当前工艺步骤中需要同时执行完同一气动阀动作指令的每个气动阀的名称。Step S111: Find out the name of each pneumatic valve that needs to execute the same pneumatic valve action instruction simultaneously in the current process step according to the target pneumatic valve action instruction set.

步骤S112:根据每个气动阀的名称及当前需同时执行的气动阀动作指 令,在响应时长信息表中,依次找出每个气动阀对应气动阀动作指令的响应时长。Step S112: According to the name of each pneumatic valve and the pneumatic valve action index that needs to be executed simultaneously In the response time information table, find out the response time of each pneumatic valve corresponding to the pneumatic valve action instruction in turn.

可以理解的是,基于前述表述可知,该目标气动阀动作指令集具体可包括当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀的气动阀动作指令,因而,可根据目标气动阀动作指令集找出当前工艺步骤中需要同时执行完同一气动阀动作指令的每个气动阀的名称。即当前工艺步骤中,哪些气动阀(具体可通过标号等方式进行名称标记)需要同时执行完同一气动阀动作指令。当找到这些气动阀的名称后,便可进一步根据每个气动阀的名称及当前需同时执行的气动阀动作指令,在响应时长信息表中,依次找出每个气动阀对应气动阀动作指令的响应时长。基于前述可知,该响应时长具体可通过提前采集并记录存储在半导体工艺设备中,以供半导体工艺设备的下位机随时调取使用,在本示例中,具体可通过响应时长信息表来实现,即响应时长信息表中记录有半导体工艺设备中所有气动阀的第一响应时长(对应于气动阀开启指令)和第二响应时长(对应于气动阀关闭指令)。这样一来,本申请示例中便可查表的方式,更好地实现本申请示例的方法步骤“获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个气动阀对应气动阀动作指令的响应时长”。It can be understood that, based on the above description, the target pneumatic valve action instruction set can specifically include the pneumatic valve action instructions of multiple pneumatic valves that need to execute the same pneumatic valve action instruction at the same time in the current process step. Therefore, the name of each pneumatic valve that needs to execute the same pneumatic valve action instruction at the same time in the current process step can be found out according to the target pneumatic valve action instruction set. That is, in the current process step, which pneumatic valves (specifically, the names can be marked by numbers, etc.) need to execute the same pneumatic valve action instruction at the same time. After finding the names of these pneumatic valves, it is possible to further find the response time of each pneumatic valve corresponding to the pneumatic valve action instruction in the response time information table according to the name of each pneumatic valve and the pneumatic valve action instructions that need to be executed simultaneously. Based on the above, it can be known that the response time can be collected in advance and recorded and stored in the semiconductor process equipment so that the lower computer of the semiconductor process equipment can retrieve and use it at any time. In this example, it can be realized through the response time information table, that is, the response time information table records the first response time (corresponding to the pneumatic valve opening instruction) and the second response time (corresponding to the pneumatic valve closing instruction) of all pneumatic valves in the semiconductor process equipment. In this way, the table can be looked up in the example of this application to better implement the method steps of the example of this application "obtaining multiple pneumatic valves that need to execute the same pneumatic valve action instruction at the same time in the current process step, and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction".

在一些示例中,为更好地实现上述响应时长信息表的生成,如图5所示,其可具体包括以下步骤:In some examples, in order to better realize the generation of the above-mentioned response duration information table, as shown in FIG5 , it may specifically include the following steps:

S11:在向目标气动阀发出气动阀开启指令时同步开始计时,并在目标气动阀执行完该气动阀开启指令时同步结束计时,以采集并在响应时长信息表中记录目标气动阀的第一响应时长。S11: When a pneumatic valve opening instruction is issued to a target pneumatic valve, timing is started synchronously, and when the target pneumatic valve completes executing the pneumatic valve opening instruction, timing is ended synchronously, so as to collect and record the first response duration of the target pneumatic valve in a response duration information table.

S12:在向目标气动阀发出气动阀关闭指令时同步开始计时,并在目标气动阀执行完该气动阀关闭指令时同步结束计时,以采集并在响应时长信息表中记录目标气动阀的第二响应时长。 S12: When a pneumatic valve closing instruction is issued to a target pneumatic valve, timing is started synchronously, and when the target pneumatic valve completes executing the pneumatic valve closing instruction, timing is ended synchronously, so as to collect and record the second response duration of the target pneumatic valve in a response duration information table.

可以理解的是,为更好地对半导体工艺设备的所有气动阀进行响应时长的采集,以生成上述示例中的响应时长信息表,其可在半导体工艺设备中增设一个响应时长采集模块,且响应时长采集模块分别与下位机及多个气动阀信号连接,以采集并记录每个气动阀的响应时长,其具体结构会在下文详述,在执行半导体工艺前,该响应时长采集模块会对半导体工艺设备的所有气动阀进行开关测试,以生成上述响应时长信息表,包括在向目标气动阀发出气动阀开启指令时同步开始计时,并在目标气动阀执行完该气动阀开启指令时同步结束计时,以采集并在响应时长信息表中记录目标气动阀的第一响应时长;以及在向目标气动阀发出气动阀关闭指令时同步开始计时,并在目标气动阀执行完该气动阀关闭指令时同步结束计时,以采集并在响应时长信息表中记录目标气动阀的第二响应时长。这样一来,便可确保该响应时长信息表中准确记录有半导体工艺设备中所有气动阀的第一响应时长(对应于气动阀开启指令)和第二响应时长(对应于气动阀关闭指令)。It can be understood that in order to better collect the response time of all pneumatic valves of semiconductor process equipment to generate the response time information table in the above example, a response time collection module can be added to the semiconductor process equipment, and the response time collection module is respectively connected to the lower computer and multiple pneumatic valve signals to collect and record the response time of each pneumatic valve. Its specific structure will be described in detail below. Before executing the semiconductor process, the response time collection module will perform a switch test on all pneumatic valves of the semiconductor process equipment to generate the above response time information table, including starting the timing synchronously when a pneumatic valve opening instruction is issued to the target pneumatic valve, and ending the timing synchronously when the target pneumatic valve completes the execution of the pneumatic valve opening instruction, so as to collect and record the first response time of the target pneumatic valve in the response time information table; and starting the timing synchronously when a pneumatic valve closing instruction is issued to the target pneumatic valve, and ending the timing synchronously when the target pneumatic valve completes the execution of the pneumatic valve closing instruction, so as to collect and record the second response time of the target pneumatic valve in the response time information table. In this way, it can be ensured that the response time information table accurately records the first response time (corresponding to the pneumatic valve opening instruction) and the second response time (corresponding to the pneumatic valve closing instruction) of all pneumatic valves in the semiconductor process equipment.

在一些示例中,执行本申请示例的方法步骤“根据多个气动阀的响应时长中的最长响应时长,计算每个气动阀的指令下发延时值”的过程可具体包括:将最长响应时长依次与多个气动阀的响应时长进行差值运算,以将依次得到的差值作为对应的气动阀的指令下发延时值。这样一来,最长响应时长对应的气动阀的指令下发延时值为0,而最短响应时长对应的气动阀的指令下发延时值最长,如此,通过指令下发延时值的计算,可为后续下位机对每个气动阀发出相应的其气动阀动作指令的具体时间作出准确的时间依据,以确保这些气动阀能在同一时间执行完同一气动阀动作指令。In some examples, the process of executing the method step of the example of the present application "calculating the instruction issuance delay value of each pneumatic valve according to the longest response time among the response times of multiple pneumatic valves" may specifically include: performing difference calculations on the longest response time and the response times of multiple pneumatic valves in sequence, and using the differences obtained in sequence as the instruction issuance delay value of the corresponding pneumatic valve. In this way, the instruction issuance delay value of the pneumatic valve corresponding to the longest response time is 0, and the instruction issuance delay value of the pneumatic valve corresponding to the shortest response time is the longest. In this way, through the calculation of the instruction issuance delay value, an accurate time basis can be made for the specific time when the subsequent lower computer issues the corresponding pneumatic valve action instruction to each pneumatic valve, so as to ensure that these pneumatic valves can execute the same pneumatic valve action instruction at the same time.

在一些示例中,执行本申请示例的方法步骤“根据每个气动阀的指令下发延时值,按时间先后顺序向每个气动阀发出相应的气动阀动作指令,以控制多个气动阀同时执行完同一气动阀动作指令”的过程可具体包括:在向指令下发延时值为0的气动阀发出相应的气动阀动作指令时同步开始计时,并 在计时的计时值等于其余任一气动阀的指令下发延时值时,同步向对应的气动阀发出相应的气动阀动作指令,以控制多个气动阀同时执行完同一气动阀动作指令。这样一来,最长响应时长对应的气动阀的指令下发延时值为0,为下位机第一个发出气动阀动作指令的对象,而最短响应时长对应的气动阀的指令下发延时值最长,为下位机最后一个发出气动阀动作指令的对象,即上述计时可在下位机向最后一个气动阀发出相应的气动阀动作指令后结束计时。最终,通过这样的方式对这些气动阀发出相应的气动阀动作指令,可确保这些气动阀能在同一时间执行完同一气动阀动作指令。In some examples, the process of executing the method step of the example of the present application "issuing a delay value according to the instruction of each pneumatic valve, and issuing a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time" may specifically include: starting the timing synchronously when issuing a corresponding pneumatic valve action instruction to the pneumatic valve with a delay value of 0, and When the timing value is equal to the instruction sending delay value of any other pneumatic valve, the corresponding pneumatic valve action instruction is synchronously sent to the corresponding pneumatic valve to control multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time. In this way, the instruction sending delay value of the pneumatic valve corresponding to the longest response time is 0, which is the first object to which the lower computer sends a pneumatic valve action instruction, and the instruction sending delay value of the pneumatic valve corresponding to the shortest response time is the longest, which is the last object to which the lower computer sends a pneumatic valve action instruction, that is, the above timing can end after the lower computer sends the corresponding pneumatic valve action instruction to the last pneumatic valve. Finally, by sending the corresponding pneumatic valve action instructions to these pneumatic valves in this way, it can be ensured that these pneumatic valves can execute the same pneumatic valve action instruction at the same time.

作为本申请的另一个方面,如图6所示,本申请实施例还单独提供一种半导体工艺设备100,该半导体工艺设备100包括下位机120(具体可以是PLC)、多个电磁阀组130、多个气动阀140以及具有多个气体管路151的工艺腔室150,多个电磁阀组130与多个气动阀140一一对应设置,使得每个气动阀140可在对应的电磁阀组130的控制下实现一个气体管路151的开启或关闭。下位机120分别与多个电磁阀组130信号连接,下位机120可包括至少一个处理器和至少一个存储器,存储器中存储有计算机程序,下位机120工作时,即计算机程序被处理器执行时实现上述实施例中的气动阀控制方法,此处不再赘述。As another aspect of the present application, as shown in FIG6 , the present application embodiment also separately provides a semiconductor process equipment 100, which includes a lower computer 120 (specifically, it can be a PLC), multiple solenoid valve groups 130, multiple pneumatic valves 140, and a process chamber 150 with multiple gas pipelines 151. The multiple solenoid valve groups 130 are arranged one-to-one with the multiple pneumatic valves 140, so that each pneumatic valve 140 can realize the opening or closing of a gas pipeline 151 under the control of the corresponding solenoid valve group 130. The lower computer 120 is respectively connected to the multiple solenoid valve groups 130 by signal. The lower computer 120 may include at least one processor and at least one memory, and a computer program is stored in the memory. When the lower computer 120 is working, that is, when the computer program is executed by the processor, the pneumatic valve control method in the above embodiment is realized, which will not be repeated here.

可选地,该半导体工艺设备100还可以包括上位机110,上位机110与下位机120信号连接。Optionally, the semiconductor process equipment 100 may further include a host computer 110 , and the host computer 110 is signal-connected to a slave computer 120 .

这样一来,在本申请实施例中,其半导体工艺设备100对不同的气动阀140进行同步控制时,可通过指令下发延时值的计算,来改变下位机120向不同的气动阀140发出相应的气动阀动作指令的时间,以很好地解决现有气动阀控制方法中由于不同的气动阀140具有不同的响应时长而导致无法真正实现不同的气动阀140同时开启或同时关闭的问题,即其可很好地实现多个气动阀140同时开启或同时关闭,确保工艺气体能同步进入工艺腔室150, 以在工艺腔室150中得到充分反应,进而大大提升工艺气体的利用率的同时,提高整个工艺过程的工艺质量。Thus, in the embodiment of the present application, when the semiconductor process equipment 100 performs synchronous control on different pneumatic valves 140, the time for the lower computer 120 to send corresponding pneumatic valve action instructions to different pneumatic valves 140 can be changed by calculating the delay value of the instruction issuance, so as to solve the problem that the different pneumatic valves 140 cannot be opened or closed at the same time in the existing pneumatic valve control method because different pneumatic valves 140 have different response times. That is, it can well realize the simultaneous opening or closing of multiple pneumatic valves 140, ensuring that the process gas can enter the process chamber 150 synchronously. In order to obtain a sufficient reaction in the process chamber 150, the utilization rate of the process gas is greatly improved, and the process quality of the entire process is improved.

在一些示例中,为更好地实现不同气动阀140的响应时长的提前采集,以记录存储在半导体工艺设备100中,以供半导体工艺设备100的下位机120随时调取使用,如图6所示,本示例中的半导体工艺设备100具体还包括响应时长采集模块160,响应时长采集模块160分别与下位机120及多个气动阀140信号连接,以采集并记录每个气动阀140的响应时长。进一步地,该响应时长采集模块具体可包括快速响应单元、计时器以及多个气动阀状态检测传感器。其中,多个气动阀状态检测传感器,分别与快速响应单元信号连接,并一一对应设置于多个气动阀140中,以采集对应的气动阀140的状态变化,以在对应的气动阀140的状态发生变化时,将相应的反馈信号反馈给快速响应单元。快速响应单元,还分别与下位机120及计时器信号连接,以在下位机120向任一气动阀140发出气动阀动作指令时,对计时器发出启动信号,以启动计时器的计时,及在接收到任一气动阀状态检测传感器反馈的反馈信号时,对计时器发出结束信号,以结束计时器的计时。In some examples, in order to better realize the early collection of the response time of different pneumatic valves 140, the response time is recorded and stored in the semiconductor process equipment 100, so that the lower computer 120 of the semiconductor process equipment 100 can be retrieved and used at any time, as shown in FIG6, the semiconductor process equipment 100 in this example further includes a response time acquisition module 160, and the response time acquisition module 160 is respectively connected to the lower computer 120 and multiple pneumatic valves 140 signals to collect and record the response time of each pneumatic valve 140. Further, the response time acquisition module may specifically include a fast response unit, a timer, and multiple pneumatic valve state detection sensors. Among them, multiple pneumatic valve state detection sensors are respectively connected to the fast response unit signals, and are arranged in a one-to-one correspondence in multiple pneumatic valves 140 to collect the state changes of the corresponding pneumatic valves 140, so that when the state of the corresponding pneumatic valve 140 changes, the corresponding feedback signal is fed back to the fast response unit. The quick response unit is also connected to the lower computer 120 and the timer signal respectively, so that when the lower computer 120 sends a pneumatic valve action instruction to any pneumatic valve 140, a start signal is sent to the timer to start the timer timing, and when a feedback signal from any pneumatic valve status detection sensor is received, an end signal is sent to the timer to end the timer timing.

可以理解的是,气动阀状态检测传感器可以反馈对应的气动阀140的开启和关闭状态,当气动阀140由开启状态切换为关闭状态,或由关闭状态切换为开启状态后,气动阀状态检测传感器的状态信号均会发生变化,此时,通过快速响应单元接收气动阀状态检测传感器的反馈信号(由于快速响应单元接收频率高,一般高达几十Hz,信号采集误差几乎可以忽略不计),终止定时器,可很好地实现相应气动阀140的响应时长采集。It can be understood that the pneumatic valve state detection sensor can feedback the opening and closing states of the corresponding pneumatic valve 140. When the pneumatic valve 140 switches from an open state to a closed state, or from a closed state to an open state, the state signal of the pneumatic valve state detection sensor will change. At this time, the feedback signal of the pneumatic valve state detection sensor is received by the rapid response unit (since the rapid response unit has a high receiving frequency, generally up to tens of Hz, the signal acquisition error is almost negligible), and the timer is terminated, which can well realize the response time collection of the corresponding pneumatic valve 140.

尽管已经相对于一个或多个实现方式示出并描述了本申请,但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本申请包括所有这样的修改和变型,并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能,用于描述这样的组件的术语旨在对应于 执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示),即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。Although the present application has been shown and described with respect to one or more implementations, equivalent variations and modifications will occur to those skilled in the art based on a reading and understanding of this specification and the drawings. The present application includes all such modifications and variations and is limited only by the scope of the appended claims. In particular, with respect to the various functions performed by the above-mentioned components, the terms used to describe such components are intended to correspond to Any component that performs the specified functions of the described components (eg, it is functionally equivalent) (unless otherwise indicated), even if not structurally equivalent to the disclosed structure that performs the functions in the exemplary implementations of this specification shown herein.

即,以上所述仅为本申请的实施例,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,例如各实施例之间技术特征的相互结合,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。That is, the above description is only an embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of the present application, such as the mutual combination of technical features between the embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

另外,在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。另外,对于特性相同或相似的结构元件,本申请可采用相同或者不相同的标号进行标识。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In addition, in the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, which are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, for structural elements with the same or similar characteristics, the present application may use the same or different reference numerals for identification. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

在本申请中,“示例性”一词是用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何一个实施例不一定被解释为比其它实施例更加优选或更加具优势。为了使本领域任何技术人员能够实现和使用本申请,本申请给出了以上描述。在以上描述中,为了解释的目的而列出了各个细节。应当明白的是,本领域普通技术人员可以认识到,在不使用这些特定细节的情况下也可以实现本申请。在其它实施例中,不会对公知的结构和过程进行详细阐述,以避免不必要的细节使本申请的描述变得晦涩。因此,本申请并 非旨在限于所示的实施例,而是与符合本申请所公开的原理和特征的最广范围相一致。 In this application, the word "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described in this application as "exemplary" is not necessarily to be construed as being more preferred or more advantageous than other embodiments. In order to enable any technician in the field to implement and use the present application, the present application provides the above description. In the above description, various details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present application can be implemented without using these specific details. In other embodiments, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present application with unnecessary details. Therefore, the present application does not describe the present invention in detail. The present disclosure is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

Claims (10)

一种半导体工艺设备的气动阀控制方法,其中,用于实现所述半导体工艺设备的多个气动阀的同步开启或同步关闭,所述气动阀控制方法包括以下步骤:A pneumatic valve control method for semiconductor process equipment, wherein the method is used to realize synchronous opening or synchronous closing of multiple pneumatic valves of the semiconductor process equipment, and the pneumatic valve control method comprises the following steps: 获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个所述气动阀对应所述气动阀动作指令的响应时长;Acquire multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step, and obtain the response time of each pneumatic valve corresponding to the pneumatic valve action instruction; 根据所述多个气动阀的响应时长中的最长响应时长,计算每个所述气动阀的指令下发延时值;Calculating a command issuance delay value for each of the pneumatic valves according to the longest response time among the response times of the plurality of pneumatic valves; 根据每个所述气动阀的指令下发延时值,按时间先后顺序向每个所述气动阀发出相应的所述气动阀动作指令,以控制所述多个气动阀同时执行完同一所述气动阀动作指令。According to the delay value of each pneumatic valve instruction, the corresponding pneumatic valve action instruction is sent to each pneumatic valve in chronological order, so as to control the multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time. 根据权利要求1所述的气动阀控制方法,其中,所述气动阀动作指令为气动阀开启指令或气动阀关闭指令;所述响应时长为对应所述气动阀开启指令的第一响应时长或对应所述气动阀关闭指令的第二响应时长。According to the pneumatic valve control method according to claim 1, wherein the pneumatic valve action instruction is a pneumatic valve opening instruction or a pneumatic valve closing instruction; the response duration is a first response duration corresponding to the pneumatic valve opening instruction or a second response duration corresponding to the pneumatic valve closing instruction. 根据权利要求1所述的气动阀控制方法,其中,所述获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个所述气动阀对应所述气动阀动作指令的响应时长的步骤之前,还包括以下步骤:The pneumatic valve control method according to claim 1, wherein before the step of acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction, the method further includes the following steps: 接收上位机统一下发的气动阀动作指令集,所述气动阀动作指令集包括当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀的气动阀动作指令。A pneumatic valve action instruction set uniformly sent by a host computer is received, wherein the pneumatic valve action instruction set includes pneumatic valve action instructions of multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in a current process step. 根据权利要求3所述的气动阀控制方法,其中,所述获取当前工艺步骤中需要同时执行完同一气动阀动作指令的多个气动阀,并得到每个所述气动阀对应所述气动阀动作指令的响应时长的步骤包括: According to the pneumatic valve control method of claim 3, the step of acquiring multiple pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step and obtaining the response time of each pneumatic valve corresponding to the pneumatic valve action instruction comprises: 根据所述气动阀动作指令集找出当前工艺步骤中需要同时执行完同一气动阀动作指令的每个所述气动阀的名称;Find out the name of each of the pneumatic valves that need to simultaneously execute the same pneumatic valve action instruction in the current process step according to the pneumatic valve action instruction set; 根据每个所述气动阀的名称及当前需同时执行的气动阀动作指令,在响应时长信息表中,依次找出每个所述气动阀对应所述气动阀动作指令的响应时长。According to the name of each of the pneumatic valves and the pneumatic valve action instructions that need to be executed simultaneously, the response time of each of the pneumatic valves corresponding to the pneumatic valve action instructions is found out in turn in the response time information table. 根据权利要求4所述的气动阀控制方法,其中,所述响应时长信息表中记录有半导体工艺设备中所有气动阀的第一响应时长和第二响应时长,所述响应时长信息表的生成方式包括以下步骤:According to the pneumatic valve control method of claim 4, wherein the response time information table records the first response time and the second response time of all pneumatic valves in the semiconductor process equipment, and the generation method of the response time information table includes the following steps: 在向目标气动阀发出气动阀开启指令时同步开始计时,并在所述目标气动阀执行完所述气动阀开启指令时同步结束计时,以采集并在所述响应时长信息表中记录所述目标气动阀的第一响应时长;The timing starts synchronously when a pneumatic valve opening instruction is issued to a target pneumatic valve, and the timing ends synchronously when the target pneumatic valve completes executing the pneumatic valve opening instruction, so as to collect and record the first response duration of the target pneumatic valve in the response duration information table; 在向目标气动阀发出气动阀关闭指令时同步开始计时,并在所述目标气动阀执行完所述气动阀关闭指令时同步结束计时,以采集并在所述响应时长信息表中记录所述目标气动阀的第二响应时长。The timing starts synchronously when a pneumatic valve closing instruction is issued to a target pneumatic valve, and the timing ends synchronously when the target pneumatic valve completes executing the pneumatic valve closing instruction, so as to collect and record the second response duration of the target pneumatic valve in the response duration information table. 根据权利要求1所述的气动阀控制方法,其中,所述根据所述多个气动阀的响应时长中的最长响应时长,计算每个所述气动阀的指令下发延时值的步骤包括:According to the pneumatic valve control method of claim 1, wherein the step of calculating the instruction issuance delay value of each pneumatic valve according to the longest response time among the response times of the plurality of pneumatic valves comprises: 将所述最长响应时长依次与所述多个气动阀的响应时长进行差值运算,以将依次得到的差值作为对应的所述气动阀的指令下发延时值。The longest response time is sequentially calculated with the response time of the plurality of pneumatic valves to use the sequentially obtained differences as delay values for sending instructions to the corresponding pneumatic valves. 根据权利要求1所述的气动阀控制方法,其中,所述根据每个所述气动阀的指令下发延时值,按时间先后顺序向每个所述气动阀发出相应的所述气动阀动作指令,以控制所述多个气动阀同时执行完同一所述气动阀动作指令的步骤包括:According to the pneumatic valve control method of claim 1, wherein the step of issuing a delay value according to the instruction of each pneumatic valve and issuing a corresponding pneumatic valve action instruction to each pneumatic valve in chronological order to control the multiple pneumatic valves to simultaneously execute the same pneumatic valve action instruction comprises: 在向所述指令下发延时值为0的所述气动阀发出相应的所述气动阀动 作指令时同步开始计时,并在所述计时的计时值等于其余任一所述气动阀的指令下发延时值时,同步向对应的所述气动阀发出相应的所述气动阀动作指令,以控制所述多个气动阀同时执行完同一所述气动阀动作指令。The pneumatic valve with a delay value of 0 sends the corresponding pneumatic valve motion to the pneumatic valve. When a pneumatic valve action instruction is issued, the timing starts synchronously, and when the timing value is equal to the delay value of the instruction of any other pneumatic valve, the corresponding pneumatic valve action instruction is synchronously issued to the corresponding pneumatic valve to control the multiple pneumatic valves to execute the same pneumatic valve action instruction at the same time. 一种半导体工艺设备,其中,包括下位机、多个电磁阀组、多个气动阀以及具有多个气体管路的工艺腔室,所述多个电磁阀组与所述多个气动阀一一对应设置,使得每个所述气动阀可在对应的所述电磁阀组的控制下实现一个所述气体管路的开启或关闭,所述下位机分别与所述多个电磁阀组信号连接,所述下位机工作时执行权利要求1-7任一项所述的气动阀控制方法。A semiconductor process equipment, comprising a lower computer, a plurality of solenoid valve groups, a plurality of pneumatic valves and a process chamber with a plurality of gas pipelines, wherein the plurality of solenoid valve groups are arranged in a one-to-one correspondence with the plurality of pneumatic valves, so that each of the pneumatic valves can realize the opening or closing of a gas pipeline under the control of the corresponding solenoid valve group, and the lower computer is respectively connected to the plurality of solenoid valve groups by signal, and the lower computer executes the pneumatic valve control method described in any one of claims 1 to 7 when working. 根据权利要求8所述的半导体工艺设备,其中,还包括响应时长采集模块,所述响应时长采集模块分别与所述下位机及所述多个气动阀信号连接,以采集并记录每个所述气动阀的响应时长。The semiconductor process equipment according to claim 8, further comprising a response time acquisition module, wherein the response time acquisition module is respectively connected to the lower computer and the plurality of pneumatic valve signals to acquire and record the response time of each of the pneumatic valves. 根据权利要求9所述的半导体工艺设备,其中,所述响应时长采集模块包括快速响应单元、计时器以及多个气动阀状态检测传感器;其中,The semiconductor process equipment according to claim 9, wherein the response time acquisition module comprises a fast response unit, a timer, and a plurality of pneumatic valve state detection sensors; wherein, 所述多个气动阀状态检测传感器,分别与所述快速响应单元信号连接,并一一对应设置于所述多个气动阀中,以采集对应的所述气动阀的状态变化,以在对应的所述气动阀的状态发生变化时,将相应的反馈信号反馈给所述快速响应单元;The multiple pneumatic valve state detection sensors are respectively connected to the quick response unit signals and are arranged in the multiple pneumatic valves in a one-to-one correspondence to collect state changes of the corresponding pneumatic valves, so as to feed back corresponding feedback signals to the quick response unit when the state of the corresponding pneumatic valve changes; 所述快速响应单元,还分别与所述下位机及所述计时器信号连接,以在所述下位机向任一所述气动阀发出气动阀动作指令时,对所述计时器发出启动信号,以启动所述计时器的计时,及在接收到任一所述气动阀状态检测传感器反馈的反馈信号时,对所述计时器发出结束信号,以结束所述计时器的计时。 The quick response unit is also respectively connected to the lower computer and the timer signal, so that when the lower computer sends a pneumatic valve action instruction to any of the pneumatic valves, a start signal is sent to the timer to start the timing of the timer, and when a feedback signal is received from any of the pneumatic valve status detection sensors, an end signal is sent to the timer to end the timing of the timer.
PCT/CN2024/084083 2023-03-27 2024-03-27 Semiconductor process device and pneumatic valve control method therefor WO2024199278A1 (en)

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