WO2024179260A1 - Power module and electronic device comprising same - Google Patents

Abstract

Disclosed is a power module, comprising a low-voltage driving chip, a high-voltage driving chip, at least one low-voltage power chip, and a plurality of high-voltage power chips. A bootstrap chip is integrated in the high-voltage driving chip. The at least one low-voltage power chip is electrically connected to the low-voltage driving chip. Any high-voltage power chip in the plurality of high-voltage power chips is electrically connected to the high-voltage driving chip. Any high-voltage power chip comprises a drift layer. Drift layers of at least two adjacent high-voltage power chips in the plurality of high-voltage power chips are constructed as an integrated part, so that the at least two adjacent high-voltage power chips are integrated as an integrated structure.

Description

Power module and electronic device having the same

This application claims the priority of Chinese patent application No. 202310188489.9 filed on February 28, 2023, the priority of Chinese patent application No. 202310188427.8 filed on February 28, 2023, the priority of Chinese patent application No. 202310190287.8 filed on February 28, 2023, and the priority of Chinese patent application No. 202310188449.4 filed on February 28, 2023, the entire contents of which are incorporated by reference into this application.

Technical Field

The present disclosure relates to the technical field of electronic equipment, and in particular to a power module and an electronic equipment having the same.

Background Art

Electronic devices are usually built with power modules to realize their functional applications. The power module encapsulated by molded resin contains a power chip and a driver chip for driving the power chip. With the popularization of electronic devices, the application end has higher and higher requirements for the miniaturization of power modules.

Summary of the invention

On the one hand, a power module is provided, comprising a low-voltage driver chip, a high-voltage driver chip, at least one low-voltage power chip and a plurality of high-voltage power chips. A bootstrap boost chip is integrated in the high-voltage driver chip. The at least one low-voltage power chip is electrically connected to the low-voltage driver chip. Any one of the plurality of high-voltage power chips is electrically connected to the high-voltage driver chip. Any one of the high-voltage power chips comprises a drift layer. The drift layers of at least two adjacent high-voltage power chips among the plurality of high-voltage power chips are constructed as an integral part, so that the at least two adjacent high-voltage power chips are integrated into an integral structure.

On the other hand, an electronic device is provided, comprising the power module mentioned above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a structural diagram of a power module according to some embodiments;

FIG2 is a cross-sectional view of a high-voltage power chip of a power module according to some embodiments;

FIG3 is a structural diagram of a high-voltage power chip of a power module according to some embodiments;

FIG4 is a cross-sectional view of a power module according to some embodiments;

FIG5 is a cross-sectional view of another power module according to some embodiments;

FIG6 is a cross-sectional view of yet another power module according to some embodiments;

FIG7 is a structural diagram of another power module according to some embodiments;

FIG8 is a cross-sectional view of yet another power module according to some embodiments;

FIG9 is a cross-sectional view of yet another power module according to some embodiments;

FIG10 is a structural diagram of a high voltage diode of yet another power module according to some embodiments;

FIG. 11 is a cross-sectional view of a high voltage diode of yet another power module according to some embodiments.

DETAILED DESCRIPTION

The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

When describing some embodiments, the term "connection" and its derivative expressions may be used. The term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.

“At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

“A and/or B” includes the following three combinations: A only, B only, and a combination of A and B.

The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, the difference between the two equalities is less than or equal to 5% of either one.

Exemplary embodiments are described herein with reference to cross-sectional views and/or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and/or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

Generally, a power module includes multiple chips, such as a low voltage driver chip, a high voltage driver chip, a bootstrap chip, a low voltage power chip, and a high voltage power chip. The size of the power module is affected by the size and arrangement of the multiple chips.

For example, the bootstrap boost chip has a certain width, so the power module will be limited in the width direction, so that the power module cannot be further reduced in the width direction. Alternatively, if the layout of multiple high-voltage power chips is unreasonable, it will also affect the design of the power module, resulting in the inability to reduce the size of the power module, which will in turn increase the cost of the power module and reduce production efficiency.

Based on this, some embodiments of the present disclosure provide a power module 1. For example, the power module 1 is an intelligent power module (IPM). However, the power module 1 in some embodiments of the present disclosure may also be other types of power modules, such as a thyristor module, an insulated gate bipolar field effect transistor module or a metal-oxide-semiconductor field-effect transistor module, etc. The present disclosure does not limit the type of power module.

In some embodiments, as shown in FIG. 1 , a power module 1 includes a low-voltage driver chip 100 and at least one low-voltage power chip 300 .

The low voltage driver chip 100 is electrically connected to at least one low voltage power chip 300, and is configured to control the working state of at least one low voltage power chip 300. For example, the low voltage driver chip 100 can be configured to receive a low level signal, and drive at least one low voltage power chip 300 to work according to the low level signal to process the low power signal, or, according to the low level signal, control at least one low voltage power chip 300 to stop working.

In some embodiments, as shown in FIG. 1 , the power module 1 further includes a high-voltage driver chip 200 and at least one high-voltage power chip 400 .

The high-voltage driver chip 200 is electrically connected to at least one high-voltage power chip 400, and is configured to control the working state of at least one high-voltage power chip 400. For example, the high-voltage driver chip 200 is configured to drive at least one high-voltage power chip 400 to work to process a high-power signal, or to control at least one high-voltage power chip 400 to stop working.

In this way, the power module 1 can realize the preset functions, for example, the power module 1 can perform conversion between alternating current and direct current.

In some embodiments, as shown in FIG1 , the power module 1 further includes at least one bootstrap boost chip 210. At least one bootstrap boost chip 210 is integrated in the high-voltage driver chip 200. The bootstrap boost chip 210 is configured to provide the additional voltage required by the drive circuit. In this way, the high-voltage driver chip 200 can not only drive the high-voltage power chip 400, but also realize the bootstrap boost function, thereby reducing the number of chips in the power module 1, which is conducive to reducing the size of the power module 1 in the width direction (i.e., the S3-S4 direction as shown in FIG1 ), thereby improving production efficiency.

For example, the power module 1 includes three bootstrap boost chips 210, and the three bootstrap boost chips 210 are integrated in the high-voltage driver chip 200. In this way, the number of chips included in the power module 1 can be reduced, and the welding wires used to connect the bootstrap boost chip 210 and the high-voltage driver chip 200 are correspondingly omitted, which is beneficial to reduce costs and simplify the packaging process of the power module 1.

In some embodiments, the pad area of the bootstrap boost chip 210 is any value between 0.95 mm ² and 3.7 mm ^2. For example, the pad area of the bootstrap boost chip 210 is any value between 0.95 mm ² and 2 mm ² , any value between 2 mm ² and 3 mm ² , or any value between 3 mm ² and 3.7 mm ² .

It is understandable that by adjusting the occupied area of the pad of the bootstrap boost chip 210 on the high-voltage driver chip 200 (eg, 0.95 mm ² ), the material cost of the bootstrap boost chip 210 can be reduced while achieving the bootstrap function of the bootstrap boost chip 210 .

In some embodiments, as shown in FIG1 , the low voltage driver chip 100 and the high voltage driver chip 200 are arranged along the length direction of the power module 1 (i.e., the S1-S2 direction shown in FIG1 ), and the low voltage power chip 300 and the high voltage power chip 400 can be arranged along the length direction of the power module 1. In this way, it is beneficial to improve the space utilization of the power module 1 and to reduce the volume of the power module 1.

In some embodiments, as shown in FIG. 1 and FIG. 2 , at least one high-voltage power chip 400 includes a plurality of high-voltage power chips 400. The high-voltage power chip 400 includes a drift layer 410. The drift layers 410 of at least two adjacent high-voltage power chips 400 among the plurality of high-voltage power chips 400 are constructed as an integral piece, so that at least two adjacent high-voltage power chips 400 are integrated into an integral structure. In this way, it is beneficial to improve the space utilization of the power module 1 and to reduce the volume of the power module 1.

It should be noted that at least two adjacent high-voltage power chips 400 are integrated into one, which means that the adjacent high-voltage power chips 400 can be synchronously installed in the power module 1, or can be synchronously removed from the power module 1. In addition, the adjacent high-voltage power chips 400 have a certain connection strength.

It is understandable that by integrating adjacent high-voltage power chips 400 into one, the distance between two adjacent high-voltage power chips 400 can be effectively reduced. For example, adjacent high-voltage power chips 400 are in contact, or spaced apart by a predetermined distance (such as less than 1 mm). In this way, the size of the power module 1 can be reduced, the manufacturing cost can be reduced, and the length of the connection line between the high-voltage power chip 400 and other components (such as the power chip base 600) can be shortened, thereby saving wire materials and reducing the risk of wire collision.

In addition, since the drift layers 410 of at least two adjacent high-voltage power chips 400 are constructed as an integral piece, the adjacent high-voltage power chips 400 do not need to be diced during processing, thereby reducing production processes and improving production efficiency.

For example, referring to FIG. 1 , at least one high-voltage power chip 400 includes three high-voltage power chips 400. The three high-voltage power chips 400 are not separated during dicing (i.e., the drift layers of the three high-voltage power chips 400 are an integrated piece), and two adjacent high-voltage power chips 400 are separated by a first partition, and the functions of the two adjacent high-voltage power chips 400 are independent. In this way, when installing the high-voltage power chips 400, the three high-voltage power chips 400 can be installed at the same time, which is beneficial to improve the packaging efficiency of the power module 1.

It should be noted that the three high-voltage power chips 400 shown in FIG1 are merely an example of a case of at least one high-voltage power chip 400, and cannot be regarded as a limitation on the number of at least one high-voltage power chip 400. In some embodiments, the at least one high-voltage power chip 400 may include one high-voltage power chip 400, or may include two high-voltage power chips 400, four high-voltage power chips 400, or more high-voltage power chips 400.

In some embodiments, as shown in FIG3 , the high-voltage power chip 400 includes a first active region 420 and a first terminal region 430, the first terminal region 430 is arranged around the first active region 420, and the first terminal region 430 is located at the edge of the high-voltage power chip 400. As shown in FIG2 , the first terminal region 430 includes a first passivation layer 431, and the first passivation layer 431 is arranged on one side surface of the drift layer 410. For example, the first passivation layers 431 of adjacent high-voltage power chips 400 are spaced apart, and a first partition 440 is defined between the first passivation layers 431 of adjacent high-voltage power chips 400. For example, the first partition 440 is a groove, and a portion of the first partition 440 is located in the drift layer 410.

It should be noted that the first passivation layer 431 is not limited to being disposed in the first terminal region 430 . In some embodiments, the first passivation layer 431 may also be disposed in the first active region 420 .

In some embodiments, the first passivation layer 431 is disposed at opposite sides of the drift layer 410 , and the first separator 440 is formed in the first passivation layer 431 .

It is understandable that the first separator 440 can physically separate two adjacent high-voltage power chips 400 so that the first passivation layers 431 of the two adjacent high-voltage power chips 400 do not contact each other, thereby facilitating improving the reliability of the high-voltage power chip 400 .

In some embodiments, during the process of manufacturing the power module 1, the polarity of the region between two adjacent high-voltage power chips 400 can be defined by a mask to form at least one first partition 440. In this way, at least one first partition 440 and a plurality of high-voltage power chips 400 can be formed simultaneously, thereby simplifying the production steps and improving production efficiency.

In some embodiments, as shown in FIG. 2 , a first electrical isolation portion 450 is provided at a position corresponding to the first partition portion 440 on one side surface of the drift layer 410, that is, the first electrical isolation portion 450 is provided in the first partition portion 440, so that the first partition portion 440 and the first electrical isolation portion 450 can be formed in the same direction to improve production efficiency. The first electrical isolation portion 450 is configured to electrically isolate two adjacent high-voltage power chips 400 to avoid electrical conduction between the two adjacent high-voltage power chips 400, thereby preventing problems such as short circuits.

In some embodiments, as shown in Fig. 2, a surface of the first electrical isolation portion 450 close to the first passivation layer 431 is flush with a surface of the drift layer 410 close to the first passivation layer 431. In this way, the transition between the first electrical isolation portion 450 and the drift layer 410 is smooth, which is convenient for processing.

In some embodiments, during the process of manufacturing the power module 1, ions of a preset doping concentration may be implanted into the first partition 440 to form the first electrical isolation portion 450. For example, the drift layer 410 is a low-doped N-type semiconductor, the first electrical isolation portion 450 is a high-doped N-type semiconductor, and the thickness of the first electrical isolation portion 450 is less than the thickness of the drift layer 410.

It can be understood that the first electrical isolation part 450 is formed on the side of the drift layer 410 facing the first separation part 440. Due to the setting of the first separation part 440, it is convenient to inject ions into the drift layer 410 (that is, the first separation part 440) and form the first electrical isolation part 450, and it is beneficial to improve the reliability of electrical isolation of the first electrical isolation part 450.

In some embodiments, as shown in FIG2 , the high-voltage power chip 400 further includes a field stop layer 401. The field stop layer 401 is disposed on a surface of the drift layer 410 that is away from the first passivation layer 431 and is configured to control the electric field distribution in the high-voltage power chip 400 and prevent gate charge from flowing to the semiconductor material. The field stop layers 401 of at least two adjacent high-voltage power chips 400 are constructed as an integral piece.

In some embodiments, as shown in FIG2 , the high-voltage power chip 400 further includes a collector layer 402. The collector layer 402 is disposed on a surface of the field stop layer 401 that is away from the drift layer 410. The collector layer 402 is a main current channel in the high-voltage power chip 400 and is configured to bear the current load. The collector layers 402 of at least two adjacent high-voltage power chips 400 are constructed as an integral piece.

In some embodiments, as shown in FIG2 , the high-voltage power chip 400 further includes a metal layer 403. The metal layer 403 is disposed on a surface of the collector layer 402 that is away from the field stop layer 401, and is configured to achieve electrical connection of the high-voltage power chip 400 and assist in heat dissipation of the high-voltage power chip 400. The metal layers 403 of at least two adjacent high-voltage power chips 400 are constructed as an integral piece.

In other words, the drift layer 410 , the field stop layer 401 , the collector layer 402 and the metal layer 403 may be stacked in sequence along the thickness direction of the high-voltage power chip 400 .

It can be understood that by constructing the field stop layer 401, collector layer 402 and metal layer 403 of two adjacent high-voltage power chips 400 as an integrated piece, the connection strength between the two adjacent high-voltage power chips 400 can be improved, and the accuracy of the relative position between the two adjacent high-voltage power chips 400 can be ensured, thereby facilitating the assembly of the high-voltage power chips 400.

In some embodiments, at least one of the low voltage power chip 300 and the high voltage power chip 400 is a reverse conducting insulated gate bipolar transistor (RC-IGBT).

In some embodiments, at least one of the low voltage power chip 300 and the high voltage power chip 400 is a metal-oxide semiconductor field effect transistor (MOSFET).

In this way, the types of the low-voltage power chip 300 and the high-voltage power chip 400 can be selected and set according to the use scenario of the power module 1, thereby enriching the applicable scenarios of the power module 1.

As configured above, the low voltage power chip 300 and the high voltage power chip 400 can achieve the same function, thereby reducing the number of chips on the power module 1. For example, the power module 1 includes a low voltage driver chip 100, a high voltage driver chip 200, three low voltage power chips 300 and three high voltage power chips 400.

In some embodiments, the high-voltage driver chip 200 includes a power supply end and a high-side floating power supply end, the positive end of the bootstrap boost chip 210 is electrically connected to the power supply end of the high-voltage driver chip 200, and the negative end of the bootstrap boost chip 210 is electrically connected to the high-side floating power supply end of the high-voltage driver chip 200.

In this way, the electrical connection between the positive and negative electrodes of the bootstrap boost chip can be achieved, and the assembly and disassembly of the power module 1 is facilitated.

In some embodiments, as shown in FIG. 1 and FIG. 4 , the power module 1 further includes a package shell 500. The low voltage driver chip 100, the high voltage driver chip 200, the low voltage power chip 300, and the high voltage power chip 400 are packaged in the package shell 500. Along the width direction of the power module 1, the opposite sides of the package shell 500 are respectively the control side (i.e., the side pointed by the direction S4 as shown in FIG. 1 ) and the power side (i.e., the side pointed by the direction S3 as shown in FIG. 1 ) of the power module 1.

In some embodiments, as shown in FIGS. 1 and 4 , the power module 1 further includes a power chip base 600 , at least a portion of which is encapsulated in a packaging shell 500 , and the low voltage power chip 300 and the high voltage power chip 400 are disposed on the power chip base 600 .

In some embodiments, as shown in FIGS. 1 and 4 , the power module 1 further includes a control side lead frame 700. The control side lead frame 700 is connected to the power chip base 600, and at least a portion of the control side lead frame 700 is encapsulated in the package shell 500. The control side lead frame 700 includes a low voltage chip base island 710, a high voltage chip base island 720, and a plurality of control side pins 730. The low voltage driver chip 100 is disposed on the low voltage chip base island 710, the high voltage driver chip 200 is disposed on the high voltage chip base island 720, and the plurality of control side pins 730 are configured to be electrically connected to the low voltage driver chip 100 and the high voltage driver chip 200, and extend from the control side to the outside of the package shell 500.

In some embodiments, as shown in FIGS. 1 and 4 , the power module 1 further includes a power side lead frame 800. The power side lead frame 800 is connected to the power chip base 600, and at least a portion of the power side lead frame 800 is encapsulated in the package housing 500. The power side lead frame 800 includes a plurality of power side pins 810, which are configured to be electrically connected to the low voltage power chip 300 and the high voltage power chip 400, and extend from the power side to extend out of the package housing 500.

In this way, when the power module 1 is running, multiple control side pins 730 and multiple power side pins 810 can be electrically connected to the external circuit, thereby realizing the electrical connection between the internal circuit of the power module 1 and the external circuit, forming an electrical loop, so that the power module 1 can operate.

For example, the control side lead frame 700 can connect the low voltage driver chip 100 and the high voltage driver chip 200 to external electrical components through multiple control side pins 730, and multiple control side pins 730 can be disassembled and assembled synchronously, thereby reducing the difficulty of disassembling and assembling the intelligent power module 1.

In some embodiments, the control-side lead frame 700 is connected to the low-voltage driver chip 100 and the high-voltage driver chip 200 through gold wires, copper wires or other materials with low resistivity. In some embodiments, the power-side lead frame 800 is connected to the low-voltage power chip 300 and the high-voltage power chip 400 through gold wires, copper wires or other materials with low resistivity.

It is understandable that, since the bootstrap boost chip is integrated in the high-voltage driver chip 200, the size of the power chip base 600 will increase, thereby increasing the heat dissipation area of the power chip base 600, which is beneficial to improving the heat dissipation performance and reliability of the power module 1. In addition, the length of the bonding wire between some of the control side pins 730 and the high-voltage chip base island 720 can be shortened, which is beneficial to saving materials for bonding wires and reducing costs.

In some embodiments, the plurality of control side pins 730 and the plurality of power side pins 810 may be made of metal copper or copper alloy. In some embodiments, the plurality of control side pins 730 and the plurality of power side pins 810 may also be made of other materials with good electrical conductivity.

In some embodiments, the package shell 500 may be made of epoxy resin. It is understood that epoxy resin has high compressive strength and insulation, so that the package shell 500 can provide physical and electrical protection to the chip inside it to prevent the external environment from impacting the chip. In some embodiments, the package shell 500 can also be made of other materials with high compressive strength and good insulation.

In some embodiments, the low-voltage driver chip 100 and the high-voltage driver chip 200 are bonded to the control side lead frame 700 by silver glue or other adhesive materials, the control side lead frame 700 and the power side lead frame 800 are pre-fixed with the power chip base 600 by solder paste printing or laser welding, and the low-voltage power chip 300 and the high-voltage power chip 400 can be connected to the power chip base 600 by solder paste printing.

In this way, the low-voltage driver chip 100, the high-voltage driver chip 200, the low-voltage power chip 300, the high-voltage power chip 400 and at least a part of the power chip base 600 can be packaged through the packaging shell 500, thereby not only avoiding damage to the low-voltage driver chip 100, the high-voltage driver chip 200, the low-voltage power chip 300, the high-voltage power chip 400 and the power chip base 600, but also preventing the low-voltage driver chip 100, the high-voltage driver chip 200, the low-voltage power chip 300 and the high-voltage power chip 400 from being electrically connected to the outside world, which is beneficial to improving the stability and reliability of the power module 1.

In some embodiments, as shown in FIG1 , the plurality of control-side pins 730 include at least two high-side suspended power supply pins 731, and the high-side suspended power supply pins 731 are electrically connected to the high-voltage driver chip 200. For example, the high-side suspended power supply pins 731 are electrically connected to the high-voltage driver chip 200 via a connecting wire, and the length of the connecting wire is any value between 0.4 mm and 3.2 mm.

It is understandable that by integrating the bootstrap boost chip 210 on the high-voltage driver chip 200, the distance between the high-side suspended power supply pin 731 and the high-voltage driver chip 200 can be shortened, thereby shortening the length of the connection line. For example, the connection line can be shortened to 0.4 mm, thereby saving the material cost of the connection line and facilitating the connection between the high-side suspended power supply pin 731 and the high-voltage driver chip 200.

For example, the length of the connecting line is any value between 0.4 mm and 1 mm, any value between 1 mm and 1.6 mm, any value between 1.6 mm and 2.4 mm, or any value between 2.4 mm and 3.2 mm.

The plane defined by the width direction and the length direction of the power module 1 is defined as the reference plane. The distance between the edge of the side of the orthographic projection of the high-side floating power supply pin 731 on the reference plane close to the high-voltage driver chip 200 and the edge of the orthographic projection of the package shell 500 close to the control side is L1, and the distance L1 is any value between 1.4mm and 2.05mm. In this way, it is beneficial to reduce the occupied area of the high-side floating power supply pin 731 on the package shell 500, save the material of the high-side floating power supply pin 731, and improve the structural strength of the high-side floating power supply pin 731.

It can be understood that by reducing the space occupied by the control side lead frame 700 (such as the power supply pin 731) on the packaging shell 500, the size of the power chip base 600 in the width direction of the power module 1 can be increased (for example, increased by 1.9 mm), which is beneficial for the power module 1 to exchange heat with the outside world through the power chip base 600, thereby improving the heat dissipation performance and operation reliability of the power module 1.

For example, the distance L1 is any value between 1.4 mm and 1.6 mm, any value between 1.6 mm and 1.8 mm, or any value between 1.8 mm and 2.05 mm.

In some embodiments, along the length direction of the power module 1, the two side edges of at least two high-side suspended power supply pins 731 are located between the two side edges of the high-voltage chip base island 720. In addition, the number of high-side suspended power supply pins 731 may correspond to the number of high-voltage power chips 400. In this way, the distance L1 can be shortened, which facilitates the electrical connection between the high-side suspended power supply pins 731 and the high-voltage driver chip 200, and helps to reduce the size of the power module 1 in the width direction.

In some embodiments, the high-side floating power supply pin 731 is separated from the high-voltage chip base island 720 by a gap, which is conducive to reducing the distance between the high-side floating power supply pin 731 and the high-voltage chip base island 720, thereby reducing the width of the control-side lead frame 700. It should be noted that the size of the above gap can be set according to actual needs, for example, the width of the gap can be 0.1mm, 0.25mm, 0.5mm or 1mm, etc.

In some embodiments, as shown in FIG. 1 , the distance between the edge of the high-voltage chip base island 720 projected on the reference plane toward the control side and the edge of the package shell 500 projected on the reference plane toward the control side is L2, and L2 is any value between 1.8 mm and 2.45 mm.

For example, L2 is any value between 1.8 mm and 2.0 mm, any value between 2.0 mm and 2.2 mm, or any value between 2.2 mm and 2.45 mm.

At least a portion of at least two high-side floating power supply pins 731 is located between an edge of the high-voltage chip island 720 projected on the reference plane toward the control side and an edge of the package housing 500 projected on the reference plane toward the control side.

It can be understood that since the high-side floating power supply pin 731 is smaller in the width direction of the power module 1, the distance between the edge of the high-voltage chip base island 720 projected on the reference plane toward the control side and the edge of the packaging shell 500 projected on the reference plane toward the control side can be shortened.

In some embodiments, as shown in FIG1 , the plurality of control-side pins 730 include at least two high-side suspended power supply pins 731, and the at least two high-side suspended power supply pins 731 are electrically connected to the high-voltage driver chip 200. In the reference plane, the area of the orthographic projection of any one of the at least two high-side suspended power supply pins 731 is any value between 1.8 mm ² and 3 mm ² .

For example, the area of the orthographic projection of any high-side floating power pin 731 is any value between 1.8 mm ² and 2.2 mm ² , any value between 2.2 mm ² and 2.6 mm ² , or any value between 2.6 mm ² and 3 mm ² .

It is understandable that when the area of the orthographic projection of any high-side floating power supply pin 731 on the reference plane is less than 1.8 ^mm2 , the space occupied by the high-side floating power supply pin 731 on the package shell 500 is small, which is not conducive to the operation of the high-side floating power supply pin 731. When the area of the orthographic projection of any high-side floating power supply pin 731 on the reference plane is greater than 3 ^mm2 , the space occupied by the high-side floating power supply pin 731 on the package shell 500 is large, which reduces the contact area between the power module 1 and other heat dissipation components and affects the heat dissipation performance of the power module 1.

Therefore, by setting the area of the orthographic projection of any high-side floating power supply pin 731 on the reference plane to be between 1.8 mm ² and 3 mm ² , the high-side floating power supply pin 731 occupies a smaller space on the packaging shell 500 while ensuring the heat dissipation efficiency of the power module 1, thereby improving the reliability and stability of the power module 1.

In some embodiments, the number of the high-side floating power pins 731 corresponds to the number of the high-voltage power chips 400 . In addition, any high-side floating power pin 731 is spaced apart from the high-voltage chip island 720 in the length direction of the power module 1 .

It can be understood that the high-side floating power supply pin 731 is connected to the high-voltage driver chip 200 by wire bonding, so the above arrangement can reduce the length dimension of the power module 1 and improve the strength of the pin while reserving enough wire bonding space. In addition, the area of the orthographic projection of the high-side floating power supply pin 731 will not be too small, thereby facilitating the connection between the high-voltage driver chip 200 and the high-side floating power supply pin 731.

In some embodiments, as shown in FIG1 , the plurality of control-side pins 730 further include at least one power pin 732 and at least one input pin 733. The power pin 732, the input pin 733 and the high-side floating power pin 731 are electrically connected to the high-voltage driver chip 200.

In some embodiments, the power pin 732 is located between the input pin 733 and the high-side floating power supply pin 731. In this way, on the one hand, it is helpful to reduce the size of the power pin 732 in the width direction of the power module 1, thereby reducing the size of the power module 1 in the width direction. On the other hand, the power pin 732 can be arranged close to the high-voltage driver chip 200, which is helpful to shorten the distance between the power pin 732 and the high-voltage driver chip 200, and the length of the power pin 732 can be shortened to reduce the material cost of the power pin 732. Furthermore, the high-voltage chip base island 720 and the low-voltage chip base island 710 can be adjusted to a position closer to the control side, so that the size of the control side lead frame 700 in the width direction of the power module 1 can be reduced.

It should be noted that some embodiments of the present disclosure are not limited to the power pin 732 being located between the input pin 733 and the high-side suspended power pin 731. In some embodiments, the input pin 733 is located between the power pin 732 and the high-side suspended power pin 731. In this way, the space occupied by the power pin 732 between the high-side suspended power pin 731 and the high-voltage chip base island 720 can be reduced, thereby reducing the size of the control-side lead frame 700 in the width direction of the power module 1. In addition, this arrangement can relatively shorten the length of the power pin 732, thereby reducing the material cost of the power pin 732.

It is understandable that when the power module 1 is used in different scenarios, different arrangements of the power pins 732 , the input pins 733 and the high-side floating power pins 731 may be selected, thereby facilitating improving the applicability of the power module 1 .

In some embodiments, as shown in FIG1 , the plurality of control side pins 730 further include at least one high-voltage driver chip connection pin 734, the high-voltage driver chip connection pin 734 is spaced apart from the high-side suspension power supply pin 731, and the minimum distance between the high-voltage driver chip connection pin 734 and the high-side suspension power supply pin 731 is less than or equal to a preset distance. For example, the preset distance is 2 to 3 times the thickness of the high-side suspension power supply pin 731. For example, the preset distance is 2 times, 2.2 times, 2.5 times, 2.7 times or 3 times the thickness of the high-side suspension power supply pin 731. For example, the high-voltage driver chip connection pin 734 extends along the width direction of the power module 1, and the end of the right end of the high-voltage driver chip connection pin 734 is opposite to the right side of the high-side suspension power supply pin 731.

For example, when the thickness of the high-side suspended power supply pin 731 is set to 0.4 mm, the minimum distance between the high-voltage driver chip connection pin 734 and the high-side suspended power supply pin 731 is less than or equal to 1.08 mm. For example, the distance between the high-voltage driver chip connection pin 734 and the high-side suspended power supply pin 731 can be set to 0.5 mm or 0.6 mm. In this way, the interference between the high-side suspended power supply pin 731 and the high-voltage driver chip connection pin 734 can be reduced, and it is beneficial to reduce the size of the power module 1 in the width direction and reduce the volume of the power module 1.

In some embodiments, as shown in FIG. 1 , the plurality of control side pins 730 further include at least one high voltage driver chip connection pin 734. The high voltage driver chip connection pin 734 includes an extension portion 7341 and a connection portion 7342. One end of the extension portion 7341 is connected to the high voltage chip base island 720, and the other end of the extension portion 7341 extends along the length direction of the power module 1 (such as the S2 direction in FIG. 1 ). One end of the connection portion 7342 is connected to the extension portion 7341, and the other end of the connection portion 7342 extends toward the control side (i.e., the S4 direction in FIG. 1 ), and extends to the outside of the package shell 500. The extension portion 7341 is spaced apart from the high side suspension power supply pin 731, and the connection portion 7342 is also spaced apart from the high side suspension power supply pin 731.

In some embodiments, along the length direction of the power module 1 , the minimum distance between the connection portion 7342 and the high-side floating power pin 731 is less than or equal to 2.7 times the size of the high-side floating power pin 731 .

For example, when the dimension of the high-side suspended power supply pin 731 along the length direction of the power module 1 is set to 0.4 mm, the minimum distance between the high-voltage driver chip connection pin 734 and the high-side suspended power supply pin 731 is less than or equal to 1.08 mm, and the distance between the connection portion 7342 and the high-side suspended power supply pin 731 is 0.5 mm or 0.6 mm. Such a setting can reduce the interference between the high-side suspended power supply pin 731 and the high-voltage driver chip connection pin 734, and is conducive to reducing the dimension of the power module 1 in the width direction and reducing the volume of the power module 1.

In some embodiments, as shown in FIG. 1 , the at least one low voltage power chip 300 includes a plurality of low voltage power chips 300 . The base 600 includes a plurality of low-voltage conductive parts 610 (e.g., three low-voltage conductive parts 610) and a high-voltage conductive part 620. The plurality of low-voltage conductive parts 610 are arranged at intervals, and the plurality of low-voltage conductive parts 610 are arranged at intervals from the high-voltage conductive part 620. The plurality of low-voltage power chips 300 are correspondingly arranged on the plurality of low-voltage conductive parts 610, and the high-voltage power chip 400 is arranged on the high-voltage conductive part 620. The plurality of low-voltage conductive parts 610 and the high-voltage conductive part 620 are respectively connected to corresponding power-side pins 810.

In this way, by integrating a plurality of high-voltage power chips 400 into one (i.e., one high-voltage power chip 400), the size of the power module 1 in the length direction can be reduced, and it is convenient to reduce the arrangement and assembly of the high-voltage power chip 400. In this case, the power chip base 600 only needs to be provided with one high-voltage conductive portion 620, which is conducive to reducing the processing difficulty and production cost of the power chip base 600.

In some embodiments, the low voltage power chip 300 and the high voltage power chip 400 are located at a position of the power chip base 600 close to the control side, and a portion of the power chip base 600 close to the power side at least partially overlaps with the power side pins 810 .

In some embodiments, as shown in FIG1 , the power chip base 600, the control side lead frame 700 and the power side lead frame 800 are constructed as an integral part, so that the relative positions of the control side lead frame 700 and the power side lead frame 800 are fixed and can be assembled and disassembled synchronously. This is conducive to improving the connection strength between the control side lead frame 700 and the power side lead frame 800, and is conducive to improving the assembly efficiency and accuracy of the power module 1.

In some embodiments, as shown in Figure 5, the power module 1 also includes an insulating sheet 510 and a heat sink 520, the insulating sheet 510 is arranged on the side of the power chip base 600 facing away from the low-voltage power chip 300 and the high-voltage power chip 400, and the heat sink 520 is arranged on the side of the insulating sheet 510 facing away from the power chip base 600.

The position of the package housing 500 corresponding to the heat sink 520 is opened to form an opening. At least a portion of the heat sink 520 is disposed in the opening, or a surface of at least a portion of the heat sink 520 away from the insulating sheet 510 is flush with the plane where the opening is located, or at least a portion of the heat sink 520 protrudes from the plane where the opening is located.

For example, the heat sink 520 may be a metal material, such as a copper material, or other material with good thermal conductivity.

It is understandable that the heat sink 520 has good thermal conductivity, which is helpful to reduce the temperature of the power chip base 600, the low-voltage power chip 300 and the high-voltage power chip 400, and avoid heat accumulation in the low-voltage power chip 300 and the high-voltage power chip 400 when the power module 1 is running.

In some embodiments, the insulating sheet 510 may be made of a material having good thermal conductivity and insulation properties, such as a ceramic material, an Al2O3 material, or an AlN material.

It is understandable that by providing an insulating sheet 510 between the heat sink 520 and the power chip base 600, conduction between the heat sink 520 and the power chip base 600 can be avoided, thereby preventing the low-voltage power chip 300 and the high-voltage power chip 400 from being electrically connected to the outside world through the heat sink 520.

In some embodiments, as shown in FIG6 , the control side lead frame 700 and the power side lead frame 800 are integrated, so that the relative positions of the control side lead frame 700 and the power side lead frame 800 are fixed and can be assembled and disassembled synchronously. This is conducive to improving the connection strength between the control side lead frame 700 and the power side lead frame 800, and is conducive to improving the assembly efficiency and accuracy of the power module 1.

The power side lead frame 800 is connected to the power chip base 600. The power chip base 600 includes a conductive layer 601, an insulating layer 602 and a heat dissipation layer 603 which are stacked. The insulating layer 602 is arranged on the side of the conductive layer 601 away from the high-voltage power chip 400, and the heat dissipation layer 603 is arranged on the side of the insulating layer 602 away from the conductive layer 601. The low-voltage power chip 300 and the high-voltage power chip 400 are arranged on the conductive layer 601, and the power side pin 810 is connected to the conductive layer 601. The insulating layer 602 is configured to cut off the electrical conduction between the conductive layer 601 and the heat dissipation layer 603, and transfer the heat of the conductive layer 601 to the heat dissipation layer 603, so that the heat dissipation layer 603 can dissipate the heat of the power chip base 600, the low-voltage power chip 300 and the high-voltage power chip 400 to the outside of the package shell 500.

The position of the package shell 500 corresponding to the heat dissipation layer 603 is open to form an opening. The heat dissipation layer 603 is located in the opening, or the surface of the heat dissipation layer 603 on one side away from the insulating layer 602 is flush with the plane where the opening is located, or the heat dissipation layer 603 protrudes from the plane where the opening is located. In this way, the heat generated by the operation of the power chip can be transferred to the heat dissipation layer 603 via the conductive layer 601 and the insulating layer 602, and the heat dissipation layer 603 performs heat exchange with the outside to achieve heat dissipation of the power module 1.

In some embodiments, the conductive layer 601 and the heat dissipation layer 603 may be metal layer structures, for example, the conductive layer 601 and the heat dissipation layer 603 may be metal copper layers or copper alloy layers.

In some embodiments, the conductive layer 601 may also be made of other materials with good electrical conductivity and thermal conductivity, the heat dissipation layer 603 may also be made of other materials with good thermal conductivity, and the insulating layer 602 may be made of insulating materials with good thermal conductivity, such as ceramics. Al2O3 or AlN.

In some embodiments, as shown in FIG1 , the power module 1 includes three low voltage power chips 300 and three high voltage power chips 400. The three low voltage power chips 300 are arranged along the length direction of the power module 1, and the three high voltage power chips 400 are arranged along the length direction of the power module 1.

In this way, the power module 1 can form a three-phase bridge circuit, and the arrangement of the three high-voltage power chips 400 facilitates the connection between the high-voltage power chip 400 and the high-voltage driver chip 200, which is conducive to simplifying the structural layout of the power module 1.

In some embodiments, as shown in FIGS. 7 to 9 , the power module 1 further includes at least one low voltage diode 310 and at least one high voltage diode 460. The low voltage power chip 300 is electrically connected to the power side lead frame 800 through the low voltage diode 310, and the high voltage power chip 400 is electrically connected to the power side lead frame 800 through the high voltage diode 460. For example, the low voltage power chip 300 is electrically connected to the corresponding power side pin 810 through the low voltage diode 310, and the high voltage power chip 400 is electrically connected to the corresponding power side pin 810 through the high voltage diode 460.

In some embodiments, the power side lead frame 800 is connected to the low voltage diode 310 and the high voltage diode 460 through gold wire or copper wire, or the power side lead frame 800 can also be connected to the low voltage diode 310 and the high voltage diode 460 through other materials with low resistivity.

In some embodiments, the at least one low voltage diode 310 includes a plurality of low voltage diodes 310 , and the plurality of low voltage diodes 310 corresponds to the plurality of low voltage power chips 300 and is electrically connected to the plurality of low voltage power chips 300 .

In some embodiments, the at least one high-voltage diode 460 includes a plurality of high-voltage diodes 460 , and the plurality of high-voltage diodes 460 corresponds to the plurality of high-voltage power chips 400 and is electrically connected to the plurality of high-voltage power chips 400 .

In some embodiments, the high-voltage diode 460 includes an epitaxial layer 461. The epitaxial layers 461 of at least two adjacent high-voltage diodes 460 among the plurality of high-voltage diodes 460 are constructed as an integral piece, so that at least two adjacent high-voltage diodes 460 are integrated into one. In this way, it is beneficial to improve the space utilization of the power module 1 and to reduce the volume of the power module 1.

It should be noted that at least two adjacent high-voltage diodes 460 are integrated into one body, which means that the adjacent high-voltage diodes 460 can be synchronously installed in the power module 1, or can be synchronously removed from the power module 1. In addition, there is a certain connection strength between the adjacent high-voltage diodes 460.

It is understandable that by integrating adjacent high-voltage diodes 460 into one, the distance between two adjacent high-voltage diodes 460 can be effectively reduced. For example, there may be no gap between adjacent high-voltage diodes 460, or the gap may be extremely small (e.g., less than 1 mm). In this way, the size of the power module 1 can be reduced, the manufacturing cost can be reduced, and the length of the wire connected to the high-voltage diode 460 can be reduced, thereby saving wire materials and reducing the risk of wire collision.

In addition, since the epitaxial layers 461 of at least two adjacent high-voltage diodes 460 are constructed as an integral piece, the adjacent high-voltage diodes 460 do not need to be diced during processing, thereby reducing the production process and improving production efficiency.

7 is only an example of a case of multiple high-voltage diodes 460, and cannot be regarded as a limit to the number of multiple high-voltage diodes 460. In some embodiments, the multiple high-voltage diodes 460 may include two, four or more high-voltage diodes 460.

In some embodiments, the low-voltage power chip 300 and the low-voltage diode 310 are arranged along the width direction of the power module 1 (i.e., the S3-S4 direction as shown in Figure 7), and the high-voltage power chip 400 and the high-voltage diode 460 are arranged along the width direction of the power module 1 (i.e., the S3-S4 direction as shown in Figure 7), which is beneficial to reducing the volume of the power module 1.

In some embodiments, as shown in FIGS. 10 and 11 , the high voltage diode 460 includes a second active region 462 and a second terminal region 463, the second terminal region 463 is disposed around the second active region 462, and the second terminal region 463 is located at the edge of the high voltage diode 460. The second terminal region 463 includes a second passivation layer 464, and the second passivation layer 464 is disposed on a side surface of the epitaxial layer 461. For example, the second passivation layers 464 of adjacent high voltage diodes 460 are spaced apart, and a second partition 469 is formed between the second passivation layers 464 of adjacent high voltage diodes 460. For example, the second partition 469 is a groove, and a portion of the second partition 469 is located in the epitaxial layer 461.

It should be noted that the second passivation layer 464 is not limited to being disposed in the second terminal region 463 . In some embodiments, the second passivation layer 464 may also be disposed in the second active region 462 .

It is understandable that the second separator 469 can physically separate two adjacent high-voltage diodes 460 so that the second passivation layers 464 of the two adjacent high-voltage diodes 460 do not contact each other, thereby facilitating improving the reliability of the high-voltage diodes 460 .

In some embodiments, as shown in FIG. 11 , a second electrical The isolating portion 465, that is, the second electrical isolating portion 465 is disposed in the second separating portion 469, so that the second separating portion 469 and the second electrical isolating portion 465 can be formed in the same direction to improve production efficiency. The second electrical isolating portion 465 is configured to electrically separate two adjacent high-voltage diodes 460 to avoid electrical conduction between the two adjacent high-voltage diodes 460, thereby preventing problems such as short circuits.

For example, the epitaxial layer 461 is a low-doped N-type semiconductor, the second electrical isolation portion 465 is a high-doped N-type semiconductor, and the thickness of the second electrical isolation portion 465 is less than the thickness of the epitaxial layer 461 .

In some embodiments, as shown in FIG11 , a surface of the second electrical isolation portion 465 close to the second partition 469 is flush with a surface of the epitaxial layer 461 close to the second passivation layer 464. In this way, the transition between the second electrical isolation portion 465 and the epitaxial layer 461 is smooth, which is convenient for processing.

It can be understood that the second electrical isolation portion 465 is formed on the side of the epitaxial layer 461 facing the second separation portion 469. Due to the setting of the second separation portion 469, it is convenient to inject ions into the epitaxial layer 461 (that is, the second separation portion 469) to form the second electrical isolation portion 465, and it is beneficial to improve the reliability of electrical isolation of the second electrical isolation portion 465.

In some embodiments, as shown in Fig. 11, the high voltage diode 460 further includes a substrate 466. The substrate 466 is disposed on a surface of the epitaxial layer 461 that is away from the second passivation layer 464. The substrates 466 of at least two adjacent high voltage diodes 460 are constructed as an integral piece.

For example, the epitaxial layer 461 includes a first sub-epitaxial layer 467 and a second sub-epitaxial layer 468, and the first sub-epitaxial layer 467 is disposed between the second sub-epitaxial layer 468 and the substrate 466. The first sub-epitaxial layers 467 of at least two adjacent high-voltage diodes 460 are constructed as an integral piece, and the second sub-epitaxial layers 468 of at least two adjacent high-voltage diodes 460 are constructed as an integral piece, which is conducive to improving the connection strength between the two adjacent high-voltage diodes 460, as well as the accuracy and stability of the relative position between the two adjacent high-voltage diodes 460, thereby improving the stability and reliability of the operation of the high-voltage diodes 460.

For example, the substrate 466, the first sub-epitaxial layer 467 and the second sub-epitaxial layer 468 are all N-type semiconductors. The doping concentration of the substrate 466 is greater than the doping concentration of the first sub-epitaxial layer 467, and the doping concentration of the first sub-epitaxial layer 467 is greater than the doping concentration of the second sub-epitaxial layer 468, so that the high-voltage diode 460 can achieve unidirectional conduction.

In some embodiments, the low voltage diode 310 and the high voltage diode 460 are disposed on the power chip base 600 and packaged in the package housing 500, thereby extending the service life of the low voltage diode 310 and the high voltage diode 460. For example, the low voltage diode 310 and the high voltage diode 460 are connected to the power chip base 600 through solder paste.

In some embodiments, as shown in FIG. 7 , at least one low-voltage diode 310 includes a plurality of low-voltage diodes 310, and the plurality of low-voltage diodes 310 correspond to the plurality of low-voltage conductive portions 610 and are disposed on the plurality of low-voltage conductive portions 610. At least one high-voltage diode 460 is integrated as one body and disposed on the high-voltage conductive portion 620, thereby facilitating the reduction of the size of the power module 1 in the length direction and facilitating the reduction of the arrangement and assembly of the high-voltage diode 460. In this case, the power chip base 600 only needs to be provided with one high-voltage conductive portion 620, which is conducive to reducing the processing difficulty and production cost of the power chip base 600.

In some embodiments, as shown in FIG. 7 , the power module 1 includes three low-voltage power chips 300 , three low-voltage diodes 310 , three high-voltage power chips 400 , and three high-voltage diodes 460 .

Three low-voltage power chips 300 are arranged along the length direction of the power module 1, three low-voltage diodes 310 are arranged along the length direction of the power module 1, three high-voltage power chips 400 are arranged along the length direction of the power module 1, and three high-voltage diodes 460 are arranged along the length direction of the power module 1. Each low-voltage power chip 300 and the corresponding low-voltage diode 310 are arranged along the width direction of the power module 1, and each high-voltage power chip 400 and the corresponding high-voltage diode 460 are arranged along the width direction of the power module 1.

In this way, the power module 1 can form a three-phase bridge circuit, and the arrangement of the three high-voltage power chips 400 facilitates the connection between the high-voltage power chip 400 and the high-voltage driver chip 200, and facilitates the connection between the high-voltage power chip 400 and the corresponding high-voltage diode 460, which is conducive to simplifying the structural layout of the power module 1.

Some embodiments of the present disclosure further provide an electronic device, which includes the power module 1 provided by any of the above embodiments. The beneficial effects of the electronic device are the same as those of the power module 1, and the present disclosure will not elaborate on this.

Those skilled in the art will appreciate that the disclosure scope of the present invention is not limited to the above specific embodiments, and certain elements of the embodiments may be modified and replaced without departing from the spirit of the present application. The scope of the present application is limited by the appended claims.

Claims (22)

A power module, comprising: Low voltage driver chip; A high-voltage driver chip, wherein a bootstrap boost chip is integrated in the high-voltage driver chip; at least one low-voltage power chip electrically connected to the low-voltage driver chip; and A plurality of high-voltage power chips, any one of which is electrically connected to the high-voltage driver chip; any one of which comprises a drift layer; The drift layers of at least two adjacent high-voltage power chips among the plurality of high-voltage power chips are constructed as an integral piece, so that the at least two adjacent high-voltage power chips are integrated into an integral structure. The power module according to claim 1, wherein any one of the high-voltage power chips further comprises: a first active region; and A first terminal region, disposed around the first active region; Among them, at least one of the first active area and the first terminal area includes a first passivation layer; the first passivation layer is arranged on a side surface of the drift layer; the first passivation layers of the at least two adjacent high-voltage power chips are spaced apart, and a first partition is defined between the first passivation layers of the at least two adjacent high-voltage power chips; the first partition is configured to physically separate the at least two adjacent high-voltage power chips. The power module according to claim 2, wherein a first electrical isolation portion is provided at a position corresponding to the first separation portion on a side surface of the drift layer close to the first passivation layer; the first electrical isolation portion is configured to electrically separate the at least two adjacent high-voltage power chips to avoid electrical conduction between the at least two adjacent high-voltage power chips. The power module according to claim 3, wherein a surface of the first electrical isolation portion close to the first passivation layer is flush with a surface of the drift layer close to the first passivation layer. The power module according to any one of claims 1 to 4, wherein any one of the high-voltage power chips further comprises: A field stop layer is arranged on a surface of the drift layer on a side away from the first passivation layer; the field stop layers of the at least two adjacent high-voltage power chips are constructed as an integral part; A collector layer is arranged on a surface of the field stop layer facing away from the drift layer; the collector layers of the at least two adjacent high-voltage power chips are constructed as an integral part; and A metal layer is arranged on a surface of the collector layer that is away from the field stop layer; the metal layers of the at least two adjacent high-voltage power chips are constructed as an integral part. The power module according to any one of claims 1 to 5, wherein the low-voltage power chip and the high-voltage power chip satisfy one of the following conditions: At least one of the low voltage power chip and the high voltage power chip is a reverse conducting insulated gate bipolar transistor; or, At least one of the low voltage power chip and the high voltage power chip is a metal-oxide semiconductor field effect transistor. The power module according to claim 1, further comprising: A power chip base, on which the low-voltage power chip and the plurality of high-voltage power chips are arranged; A packaging shell, in which at least a portion of the power chip base, the low-voltage driver chip, the high-voltage driver chip, the low-voltage power chip and the plurality of high-voltage power chips are packaged; two opposite sides in the width direction of the power module are respectively a control side and a power side of the power module; A control side lead frame; the control side lead frame is connected to the power chip base, and at least a portion of the control side lead frame is packaged in the package shell; the control side lead frame includes: A low-voltage chip base island, wherein the low-voltage driver chip is arranged on the low-voltage chip base island; a high-voltage chip base island, the high-voltage driver chip is arranged on the high-voltage chip base island, and A plurality of control side pins, wherein the plurality of control side pins are electrically connected to the low voltage driver chip and the high voltage driver chip and extend from the control side to the outside of the package shell; A power side lead frame, the power side lead frame is connected to the power chip base, and at least a portion of the power side lead frame is encapsulated in the packaging shell; the power side lead frame includes a plurality of power side pins, the plurality of power side pins are electrically connected to the low voltage power chip and the high voltage power chip, and extend from the power side to the outside of the packaging shell. The power module according to claim 7, wherein the plurality of control-side pins are arranged substantially along the length direction of the power module, and include a power pin, an input pin, and a high-side floating power pin; the power pin, the input pin, and the high-side floating power pin are electrically connected to the high-voltage driver chip respectively; The plurality of control-side pins satisfy one of the following conditions: Along the length direction of the power module, the power pin is located between the input pin and the high-side floating power pin; or, Along the length direction of the power module, the input pin is located between the power pin and the high-side floating power supply pin. The power module according to claim 7 or 8, wherein the at least one low-voltage power chip comprises a plurality of low-voltage power chips; The power chip base comprises: A plurality of low-voltage conductive parts, wherein the plurality of low-voltage conductive parts are arranged at intervals; the plurality of low-voltage power chips are correspondingly arranged on the plurality of low-voltage conductive parts; and A high-voltage conductive portion is arranged to be spaced apart from the plurality of low-voltage conductive portions, and the plurality of high-voltage power chips are arranged on the high-voltage conductive portion; Wherein, the high-voltage conductive part and the plurality of low-voltage conductive parts are connected to the corresponding power-side pins. The power module according to any one of claims 7 to 9, wherein the power chip base, the control-side lead frame and the power-side lead frame are constructed as an integral piece. The power module according to claim 10, further comprising: an insulating sheet, arranged on a side of the power chip base facing away from the low-voltage power chip and the high-voltage power chip; and A heat sink is arranged on a side of the insulating sheet facing away from the power chip base. The power module according to claim 11, wherein the packaging shell is opened at a position corresponding to the heat sink to form an opening; The heat sink meets one of the following requirements: At least a portion of the heat sink is disposed within the opening; or, A surface of at least a portion of the heat sink that is away from the insulating sheet is flush with the plane where the opening is located; or, At least a portion of the heat sink protrudes from a plane where the opening is located. The power module according to any one of claims 1 to 12, further comprising: at least one low voltage diode, electrically connected to the at least one low voltage power chip respectively; A plurality of high-voltage diodes are electrically connected to the plurality of high-voltage power chips respectively; any one of the plurality of high-voltage diodes comprises an epitaxial layer; The epitaxial layers of at least two adjacent high-voltage diodes among the plurality of high-voltage diodes are constructed as an integral piece, so that the at least two adjacent high-voltage diodes are integrated into an integral structure. The power module according to claim 13, wherein any one of the high-voltage diodes further comprises: a second active region; and a second terminal region, disposed around the second active region; Wherein, at least one of the second active area and the second terminal area includes a second passivation layer; the second passivation layer is arranged on a side surface of the epitaxial layer; the second passivation layers of the at least two adjacent high-voltage diodes are spaced apart, and a second partition is defined between the second passivation layers of the at least two adjacent high-voltage diodes; the second partition is configured to physically separate the at least two adjacent high-voltage diodes. The power module according to claim 14, wherein a second electrical isolation portion is provided at a position corresponding to the second separation portion on a side surface of the epitaxial layer close to the second passivation layer; the second electrical isolation portion is configured to electrically separate the at least two adjacent high-voltage diodes to avoid electrical conduction between the at least two adjacent high-voltage diodes. The power module according to claim 14 or 15, wherein any one of the high-voltage diodes further comprises a substrate, and the substrate is arranged on a surface of the epitaxial layer facing away from the second passivation layer; and the substrates of the at least two adjacent high-voltage diodes are constructed as an integral piece. The power module according to claim 16, wherein the epitaxial layer comprises: a first sub-epitaxial layer; and a second sub-epitaxial layer, wherein the first sub-epitaxial layer is disposed between the second sub-epitaxial layer and the substrate; The first sub-epitaxial layers of the at least two adjacent high-voltage diodes are constructed as an integral part, and the second sub-epitaxial layers of the at least two adjacent high-voltage diodes are constructed as an integral part. The power module according to claim 17, wherein the substrate, the first sub-epitaxial layer and the second sub-epitaxial layer are all N-type semiconductors; the doping concentration of the substrate is greater than the doping concentration of the first sub-epitaxial layer, and the doping concentration of the first sub-epitaxial layer is greater than the doping concentration of the second sub-epitaxial layer, so that the high-voltage diode can achieve unidirectional conduction. The power module according to any one of claims 13 to 18, further comprising: A power chip base, on which the low-voltage power chip, the low-voltage diode, the plurality of high-voltage power chips and the plurality of high-voltage diode chips are arranged; A packaging shell, in which at least a portion of the power chip base, the low-voltage driver chip, the high-voltage driver chip, the low-voltage power chip, the low-voltage diode, the plurality of high-voltage power chips and the plurality of high-voltage diodes are packaged; two opposite sides in the width direction of the power module are respectively the control side and the power side of the power module; A control side lead frame; the control side lead frame is connected to the power chip base, and at least a portion of the control side lead frame is packaged in the package shell; the control side lead frame includes: A low-voltage chip base island, wherein the low-voltage driver chip is arranged on the low-voltage chip base island; a high-voltage chip base island, the high-voltage driver chip is arranged on the high-voltage chip base island, and A plurality of control side pins, wherein the plurality of control side pins are electrically connected to the low voltage driver chip and the high voltage driver chip and extend from the control side to the outside of the package shell; A power side lead frame, the power side lead frame is connected to the power chip base, and at least a portion of the power side lead frame is encapsulated in the packaging shell; the power side lead frame includes a plurality of power side pins, the plurality of power side pins are electrically connected to the low voltage diode and the high voltage diode, and extend from the power side to the outside of the packaging shell. The power module of claim 19, wherein the at least one low voltage diode comprises a plurality of low voltage diodes; The power chip base comprises: A plurality of low-voltage conductive parts, wherein the plurality of low-voltage conductive parts are arranged at intervals; the plurality of low-voltage diodes are correspondingly arranged on the plurality of low-voltage conductive parts; and A high-voltage conductive portion is arranged to be spaced apart from the plurality of low-voltage conductive portions, and the plurality of high-voltage diodes are arranged on the high-voltage conductive portion; Wherein, the high-voltage conductive part and the plurality of low-voltage conductive parts are connected to the corresponding power-side pins. The power module according to any one of claims 1 to 20, wherein the high-voltage driver chip includes a power supply terminal and a high-side floating power supply terminal, the positive terminal of the bootstrap boost module is connected to the power supply terminal, and the negative terminal of the bootstrap boost module is connected to the high-side floating power supply terminal. An electronic device comprises the power module according to any one of claims 1 to 21.