WO2024162227A1

WO2024162227A1 - Frame-fitted mask, and manufacturing method for organic device

Info

Publication number: WO2024162227A1
Application number: PCT/JP2024/002532
Authority: WO
Inventors: 勝也小幡; 実駒田; 久実子穂刈; 康子曽根
Original assignee: 大日本印刷株式会社
Priority date: 2023-01-30
Filing date: 2024-01-26
Publication date: 2024-08-08
Also published as: TW202503086A; JP2024107763A

Abstract

This frame-fitted mask includes: a first layer; a second layer; and a frame. The first layer includes: at least one first opening that opens from a first surface through a second surface; and an outer region that is, in plan view, located between an outer edge and the first opening. The second layer includes: a plurality of second openings that open from a third surface through a fourth surface. The frame is connected to the outer edge and/or the outer region of the first layer. In plan view, at least a part of the frame extends to the outside of the outer edge of the first layer.

Description

Mask with frame and method for manufacturing organic device

Embodiments of the present disclosure relate to a framed mask and a method for manufacturing an organic device.

The vapor deposition method is known as a method for forming precise patterns. In the vapor deposition method, a mask with openings is first combined with a substrate. Next, the vapor deposition material is applied to the substrate through the openings in the mask. This allows a vapor deposition layer containing the vapor deposition material to be formed on the substrate in a pattern corresponding to the pattern of the mask openings. The vapor deposition method is used, for example, as a method for forming pixels for organic electroluminescence (EL) display devices.

For example, JP2013-49889A discloses a configuration using a mask device that includes a frame and a mask that is joined to the frame under tension. The frame and mask are made of an iron alloy that contains nickel.

On the other hand, for example, JP2009-062565A proposes constructing a mask from a silicon substrate to prevent the mask from deforming due to heat.

When openings are formed close to the outer edge of a mask using a silicon substrate, the outer edge becomes easily damaged, making the mask difficult to handle. On the other hand, there is a demand for forming openings close to the outer edge of the mask, making it possible to form a deposition layer over a wider area of the substrate with a single mask.

The embodiment of the present disclosure aims to provide a mask that can effectively solve these problems.

A mask according to an embodiment of the present disclosure may include a framed mask, comprising a first layer including a first surface, a second surface located opposite to the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a plan view, a third surface facing the second surface, a fourth surface located opposite to the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view, a fifth surface facing the same side as the fourth surface, and a sixth surface located opposite to the fifth surface, and a frame connected to the outer edge of the first layer and/or the first surface of the outer region of the first layer. The first layer may include silicon. In a plan view, at least a portion of the frame may extend to the outside of the outer edge of the first layer. The frame may include glass or metal.

According to an embodiment of the present disclosure, damage to a mask containing silicon can be suppressed when the mask is handled.

FIG. 1 is a plan view illustrating an example of an organic device. FIG. 1 is a diagram showing an example of a deposition apparatus equipped with a framed mask. FIG. 2 is a plan view showing an example of a framed mask as viewed from the entrance surface side. FIG. 13 is a plan view showing a modified example of a framed mask as viewed from the entrance surface side. FIG. 13 is a plan view showing a modified example of a framed mask as viewed from the entrance surface side. FIG. 2 is a plan view showing an example of a framed mask as viewed from the exit surface side. 3B is a cross-sectional view of the framed mask of FIG. 3A taken along line VV. 5B is an enlarged view of a portion surrounded by a two-dot chain line in the cross section shown in FIG. 5A. FIG. FIG. 4 is a cross-sectional view showing an example of an effective area. 5C is an enlarged view of a portion surrounded by a two-dot chain line in the cross section shown in FIG. 5B. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 5A to 5C are cross-sectional views showing an example of a method for manufacturing a framed mask according to an embodiment. 11A and 11B are cross-sectional views illustrating a modified example of the method for forming the second opening. 11A and 11B are cross-sectional views illustrating a modified example of the method for forming the second opening. 11A and 11B are cross-sectional views illustrating a modified example of the method for forming the second opening. FIG. 7 is a cross-sectional view corresponding to FIG. 6 and showing a modified example of a framed mask. FIG. 7 is a cross-sectional view corresponding to FIG. 6 and showing a modified example of a framed mask. FIG. 1 is a diagram showing an example of an apparatus including an organic device.

In this specification and drawings, unless otherwise specified, terms that refer to the materials that form the basis of a certain configuration, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

Unless otherwise specified, in this specification and drawings, terms that specify shapes and geometric conditions and their degrees, such as "parallel" and "orthogonal," and values of lengths and angles, are not bound by strict meanings and are interpreted to include the extent to which similar functions may be expected.

In this specification and drawings, unless otherwise specified, when a certain component or region or other component is described as being "on" or "under", "upper" or "lower" or "above" or "below" another component or region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is included between a certain component and the other component, that is, cases where the components are indirectly in contact. Furthermore, unless otherwise specified, the terms "on", "upper side", "upper", or "lower", or "lower", "lower" and "lower" may be used in the up-down direction.

In this specification and drawings, unless otherwise specified, the state in which the face of element A is "facing" the face of element B includes not only the case in which the face of element A is in contact with the face of element B, but also the case in which element C is located between the faces of element A and element B. In other words, the term "facing" is a term that describes the orientation of the two faces.

In this specification and drawings, unless otherwise specified, identical parts or parts having similar functions are given the same or similar symbols, and repeated explanations may be omitted. In addition, the dimensional ratios of the drawings may differ from the actual ratios for the convenience of explanation, and some components may be omitted from the drawings.

Unless otherwise specified in this specification and drawings, one embodiment of this specification may be combined with other examples to the extent that no contradictions arise. In addition, other examples may be combined with each other to the extent that no contradictions arise.

Unless otherwise specified in this specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary to the extent that no contradiction occurs.

In one embodiment of this specification, an example will be described in which a mask is used to form an organic layer or electrodes on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality, or so-called VR, or augmented reality, or so-called AR. The mask of this embodiment may also be used to form electrodes of a display device other than an organic EL display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

A first aspect of the present disclosure is a framed mask, comprising:
a first layer including a first surface, a second surface located on the opposite side of the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a plan view;
a second layer including a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first openings in a plan view;
a frame connecting to an outer edge of the first layer and/or to the first surface of the outer region of the first layer;
Including,
the first layer comprises silicon;
In a plan view, at least a portion of the frame extends to an outside of the outer edge of the first layer,
The frame is a framed mask comprising glass or metal.

In a framed mask according to a second aspect in accordance with the first aspect described above, the frame may include a fifth surface facing the same side as the fourth surface, a sixth surface located on the opposite side of the fifth surface, and a third opening that penetrates from the fifth surface to the sixth surface and overlaps with the first opening in a plan view.

In a framed mask according to a third aspect following the first or second aspect described above, the frame may be formed with a step portion that accommodates the outer edge of the first layer.

In a framed mask according to a fourth aspect that follows any one of the first aspect to the third aspect described above, the framed mask may have a connection layer between the frame and the first layer.

In the framed mask according to the fifth aspect, which is in accordance with any one of the first aspect to the fourth aspect described above, the connection layer may include a glass material, an inorganic material, a metal material, or a resin material.

In the framed mask according to the sixth aspect in accordance with the fifth aspect described above, the connection layer may include a spacer.

In a framed mask according to a seventh aspect that follows any one of the first aspect to the sixth aspect described above, a spacer may be disposed between the frame and the first layer.

In a framed mask according to an eighth aspect that follows any one of the fourth aspect to the sixth aspect described above, the connection layer may be disposed only between the outer edge of the first layer and the frame.

In a framed mask according to a ninth aspect that follows any one of the first aspect to the eighth aspect described above, an intermediate layer may be included between the first layer and the second layer.

A tenth aspect of the present disclosure is a method for manufacturing an organic device, comprising:
A method for manufacturing an organic device, comprising the step of forming an organic layer on a substrate by a deposition method using the framed mask according to any one of the first to ninth aspects described above.

One embodiment will be described with reference to Figures 1 to 13. First, an organic device 100 having an organic layer formed by using a mask will be described. Figure 1 is a cross-sectional view showing an example of an organic device 100.

The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

The organic device 100 may have an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 contains, for example, polyimide. The insulating layer 160 may overlap an end of the first electrode 120. "Planar view" means viewing an object along the normal direction of the surface of a plate-like member such as the substrate 110.

The substrate 110 may be an insulating member. The material of the substrate 110 may be, for example, a rigid material with no flexibility, such as silicon, quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a flexible material with flexibility, such as a resin film, an optical resin plate, or thin glass. The substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using an apparatus that performs a semiconductor manufacturing process. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using an apparatus that performs a semiconductor manufacturing process.

Element 115 is configured to realize some function by applying a voltage between first electrode 120 and second electrode 140, or by causing a current to flow between first electrode 120 and second electrode 140. For example, when element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.

The first electrode 120 includes a material having electrical conductivity. For example, the first electrode 120 includes a metal, a metal oxide having electrical conductivity, or other inorganic material having electrical conductivity. The first electrode 120 may include a metal oxide having transparency and electrical conductivity, such as indium tin oxide.

The organic layer 130 includes an organic material. When a current is passed through the organic layer 130, the organic layer 130 can perform some function. Passing a current means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be a light-emitting layer that emits light when a current is passed through it, or a layer whose light transmittance or refractive index changes when a current is passed through it. The organic layer 130 may include an organic semiconductor material.

As shown in FIG. 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located between them is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc.

The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof. As shown in FIG. 1, the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

Next, a method for forming the organic layer 130 on the substrate 110 by a vapor deposition method will be described. FIG. 2 is a diagram showing a vapor deposition device 10. The vapor deposition device 10 performs a vapor deposition process in which a vapor deposition material is vapor-deposited on a target object.

As shown in FIG. 2, the deposition apparatus 10 may include therein a deposition source 6, a heater 8, and a framed mask 15. The deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7 such as an organic material or a metal material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere.

The framed mask 15 includes a mask 20 and a frame 60 attached to the mask 20. The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The exit surface 202 is located on the opposite side of the incident surface 201. The framed mask 15 is supported by a mask holder 9. The framed mask 15 is arranged so that the incident surface 201 faces the deposition source 6 and the exit surface 202 faces the first surface 111 of the substrate 110. A part of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

As shown in FIG. 2, the deposition device 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 contains a metal material, the magnet 5 can attract the mask 20 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 20 and the substrate 110. This can suppress the occurrence of a shadow in the deposition process. In this application, a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.

Next, the framed mask 15 will be described in detail. Figure 3A is a plan view showing an example of the framed mask 15 when viewed from the side of the incident surface 201. Figure 4 is a plan view showing an example of the framed mask 15 when viewed from the side of the exit surface 202. Figure 5A is a cross-sectional view taken along line V-V of the framed mask 15 in Figure 3A. Figure 5B is an enlarged view of the portion surrounded by the two-dot chain line in the cross-section of Figure 5A.

First, the mask 20 will be described in detail. As shown in FIG. 5A, the mask 20 includes a first layer 30 and a second layer 40 arranged in order from the entrance surface 201 toward the exit surface 202. The first layer 30 includes silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The second layer 40 includes, for example, a metal material. As shown in FIG. 5A, the mask 20 may further include an intermediate layer 50. The intermediate layer 50 is disposed between the first layer 30 and the second layer 40. Each layer will be described below.

The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301.

The first opening 31 penetrates the first layer 30 from the first surface 301 to the second surface 302. As shown in FIG. 3A, the first layer 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1.

The first opening 31 may correspond to one screen of the organic EL display device. The mask 20 shown in FIG. 3A can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in FIG. 3A, the first opening 31 may have a rectangular outline in a plan view.

FIGS. 3B and 3C are plan views showing other examples of the mask 20. As shown in FIG. 3B, the corners of the contour of the first opening 31 may include curves. As shown in FIG. 3C, the contour of the first opening 31 may be octagonal. According to the examples shown in FIG. 3B and FIG. 3C, when stress is applied to the contour of the first opening 31, the stress can be prevented from concentrating on the corners. This makes it possible to prevent the first layer 30 from being damaged.

The first wall surface 32 is the surface of the first layer 30 facing the first opening 31. In the example shown in FIG. 3A, the first wall surface 32 extends along the normal direction of the first surface 301.

As shown in FIG. 3A, the area of the first layer 30 where the first openings 31 are not formed may be partitioned into an outer area 35 and an inner area 36. The inner area 36 is an area located between two adjacent first openings 31 in a planar view. The outer area 35 is an area located between the outer edge 303 of the first layer 30 and the first openings 31 in a planar view. As shown in FIG. 3A, the inner area 36 may extend in a first direction D1 and a second direction D2.

As shown in Figures 3A and 4, the first layer 30 may include an alignment mark 39. The alignment mark 39 is formed, for example, on the second surface 302. The alignment mark 39 may also be formed on the first surface 301. The alignment mark 39 is used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has the property of transmitting visible light, the alignment mark 39 can be seen through the substrate 110.

As shown in Figures 3A and 4, the alignment mark 39 may have a circular outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or the inner region 36. The alignment mark 39 may be formed in a layer other than the first layer 30.

The first layer 30 includes silicon or a silicon compound as described above. The first layer 30 is produced, for example, by processing a silicon wafer. As shown in FIG. 3A, the outer edge 303 of the first layer 30 may include a straight portion. The straight portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and the notch represent the crystal orientation of the silicon wafer.

The maximum dimension S1 of the first layer 30 in plan view may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimension S1 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimension S1 may be determined by a first group consisting of 100 mm, 150 mm, and 200 mm, and/or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of the dimension S1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension S1 may be determined by a combination of any two of the values included in the first group described above. The range of the dimension S1 may be determined by a combination of any two of the values included in the second group described above. The dimension S1 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.

The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 3 mm or more, 10 mm or more, or 20 mm or more. The dimension S2 may be, for example, 30 mm or less, 50 mm or less, or 100 mm or less. The range of the dimension S2 may be determined by a first group consisting of 3 mm, 10 mm, and 20 mm, and/or a second group consisting of 30 mm, 50 mm, and 100 mm. The range of the dimension S2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension S2 may be determined by a combination of any two of the values included in the first group described above. The range of the dimension S2 may be determined by a combination of any two of the values included in the second group described above. The dimension S2 may be, for example, 3 mm or more and 100 mm or less, 3 mm or more and 50 mm or less, 3 mm or more and 30 mm or less, 3 mm or more and 20 mm or less, 3 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, or 50 mm or more and 100 mm or less.

The interval S3 between two first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more. The interval S3 may be, for example, 10 mm or less, 15 mm or less, or 20 mm or less. The range of the interval S3 may be determined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm, and/or a second group consisting of 10 mm, 15 mm, and 20 mm. The range of the interval S3 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the interval S3 may be determined by a combination of any two of the values included in the first group described above. The range of the interval S3 may be determined by a combination of any two of the values included in the second group described above. The interval S3 may be, for example, 0.1 mm or more and 20 mm or less, 0.1 mm or more and 15 mm or less, 0.1 mm or more and 10 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 20 mm or less, 0.5 mm or more and 15 mm or less, 0.5 mm or more and 10 mm or less, 0.5 mm or more and 1.0 mm or less, 1.0 mm or more and 20 mm or less, 1.0 mm or more and 15 mm or less, 1.0 mm or more and 10 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, or 15 mm or more and 20 mm or less.

The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 may be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. The thickness T1 may be, for example, 600 μm or less, 800 μm or less, or 1000 μm or less. The range of the thickness T1 may be determined by a first group consisting of 50 μm, 100 μm, and 200 μm, and/or a second group consisting of 600 μm, 800 μm, and 1000 μm. The range of the thickness T1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness T1 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness T1 may be determined by a combination of any two of the values included in the second group described above. The thickness T1 may be, for example, 50 μm or more and 1000 μm or less, 50 μm or more and 800 μm or less, 50 μm or more and 600 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 800 μm or less, 100 μm or more and 600 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 1000 μm or less, 200 μm or more and 800 μm or less, 200 μm or more and 600 μm or less, 600 μm or more and 1000 μm or less, 600 μm or more and 800 μm or less, or 800 μm or more and 1000 μm or less.

Next, the second layer 40 will be described. The second layer 40 includes a third surface 401, a fourth surface 402, and a plurality of second openings 41. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401.

The second openings 41 penetrate the second layer 40 from the third surface 401 to the fourth surface 402. One second opening 41 corresponds to one organic layer 130. A group of the regularly-arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in Figures 3A and 4, a group of the regularly-arranged second openings 41 may overlap one first opening 31 in a plan view. The groups of the second openings 41 are supported by the first layer 30 formed by processing a single member such as a silicon wafer.

The second layer 40 may be divided into a peripheral region 43 and an effective region 44. The peripheral region 43 is an area that overlaps with the first layer 30 in a plan view. The effective region 44 is an area in which a group of a plurality of regularly-arranged second openings 41 is distributed.

FIG. 5C is a cross-sectional view showing an example of the effective area 44. The second layer 40 includes a second wall surface 42 facing the second opening 41. As shown in FIG. 5C, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it approaches the third surface 401. By including the tapered surface 42a in the second wall surface 42, it is possible to suppress the occurrence of a shadow near the second wall surface 42.

5C, the symbol S8 represents the width of the tapered surface 42a in the direction in which the second openings 41 are arranged. The width S8 may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more. The width S8 may be, for example, 10 μm or less, 20 μm or less, or 25 μm or less. The range of the width S8 may be determined by a first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm, and/or a second group consisting of 10 μm, 20 μm, and 25 μm. The range of the width S8 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the width S8 may be determined by a combination of any two of the values included in the first group described above. The range of the width S8 may be determined by a combination of any two of the values included in the second group described above. The width S8 may be, for example, 0.1 μm or more and 25 μm or less, 0.1 μm or more and 20 μm or less, 0.1 μm or more and 10 μm or less, 0.1 μm or more and 1.0 μm or less, 0.1 μm or more and 0.5 μm or less, 0.5 μm or more and 25 μm or less, 0.5 μm or more and 20 μm or less, 0.5 μm or more and 10 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, or 20 μm or more and 25 μm or less.

In FIG. 5C, the symbol θ1 represents the angle between the second wall surface 42 and the fourth surface 402. The angle θ1 may be, for example, 50° or more, 55° or more, or 60° or more. The angle θ1 may be, for example, 80° or less, 85° or less, or less than 90°. The range of the angle θ1 may be determined by a first group consisting of 50°, 55°, and 60°, and/or a second group consisting of 80°, 85°, and 90°. The range of the angle θ1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the angle θ1 may be determined by a combination of any two of the values included in the first group described above. The range of the angle θ1 may be determined by a combination of any two of the values included in the second group described above. The angle θ1 may be, for example, 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 60°, 60° or more and less than 90°, 60° or more and less than 85°, 60° or more and less than 80°, 80° or more and less than 90°, 80° or more and less than 85°, or 85° or more and less than 90°.

The second layer 40 may contain a metal material. When the second layer 40 contains a metal material, the mask 20 can be attached to the substrate 110 by using a magnet 5. In this case, the mask 20 can be attracted to the magnet 5 by magnetic force, improving the adhesion between the mask 20 and the substrate 110. This improves the definition of the organic layers 130A, 130B, and 130C of the organic device 100.

The metal material contained in the second layer 40 may be a magnetic metal material. For example, an iron alloy containing nickel may be used as the material constituting the second layer 40. The iron alloy may further contain cobalt in addition to nickel. For example, an iron alloy containing nickel and cobalt in total of 30% by mass or more and 54% by mass or less and a cobalt content of 0% by mass or more and 6% by mass or less may be used as the material of the second layer 40. For the iron alloy containing nickel, an Invar material containing 34% by mass or more and 38% by mass or less of nickel, or a low thermal expansion Fe-Ni-based plating alloy containing 38% by mass or more and 54% by mass or less of nickel may be used. For the iron alloy containing nickel and cobalt, a Super Invar material containing 30% by mass or more and 34% by mass or less of nickel and further containing cobalt may be used. By using such an iron alloy, the thermal expansion coefficient of the second layer 40 can be reduced. For example, when a glass substrate is used as the substrate 110, the thermal expansion coefficient of the second layer 40 can be adjusted to a value equal to or close to that of the glass substrate. This makes it possible to suppress deterioration of accuracy.

Instead of the above-mentioned iron alloy containing nickel, the material constituting the second layer 40 may be, for example, nickel, or a nickel alloy containing cobalt. When a nickel alloy containing cobalt is used, a nickel alloy containing 8% by mass or more and 10% by mass or less of cobalt may be used as the material for the second layer 40. When such nickel or nickel alloy is used, it is possible to suppress the decomposition of the plating solution used in the second layer formation process described below, and the stability of the plating solution can be improved.

The second layer 40 may be composed of a single metal layer or may include multiple metal layers. If the mask 20 includes an intermediate layer 50, the second metal layer 40 is composed of a material that is resistant to an etchant that etches the intermediate layer 50.

The thickness of the second layer 40 is smaller than the thickness T1 of the first layer 30. The thickness of the second layer 40 may be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more. The thickness of the second layer 40 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The thickness range of the second layer 40 may be determined by a first group consisting of 0.5 μm, 1.0 μm, and 2.0 μm, and/or a second group consisting of 5 μm, 10 μm, and 25 μm. The thickness range of the second layer 40 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The thickness range of the second layer 40 may be determined by a combination of any two of the values included in the first group described above. The thickness range of the second layer 40 may be determined by a combination of any two of the values included in the second group described above. The thickness of the second layer 40 may be, for example, 0.5 μm to 25 μm, 0.5 μm to 10 μm, 0.5 μm to 5 μm, 0.5 μm to 2.0 μm, 0.5 μm to 1.0 μm, 1.0 μm to 25 μm, 1.0 μm to 10 μm, 1.0 μm to 5 μm, 1.0 μm to 2.0 μm, 2.0 μm to 25 μm, 2.0 μm to 10 μm, 2.0 μm to 5 μm, 5 μm to 25 μm, 5 μm to 10 μm, or 10 μm to 25 μm. The thickness of the second layer 40 being 25 μm or less can suppress the occurrence of shadows. By making the thickness of the second layer 40 0.5 μm or more, it is possible to prevent defects such as pinholes and deformations from occurring in the second layer 40.

The dimension S4 of the second opening 41 in plan view may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The dimension S4 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the dimension S4 may be determined by a first group consisting of 1 μm, 2 μm, and 3 μm, and/or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the dimension S4 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the dimension S4 may be determined by a combination of any two of the values included in the first group described above. The range of the dimension S4 may be determined by a combination of any two of the values included in the second group described above. The dimension S4 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

The interval S5 between two second openings 41 in the direction in which the second openings 41 are arranged may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The interval S5 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the interval S5 may be determined by a first group consisting of 1 μm, 2 μm, and 3 μm, and/or a second group consisting of 5 μm, 10 μm, and 25 μm. The range of the interval S5 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the interval S5 may be determined by a combination of any two of the values included in the first group described above. The range of the interval S5 may be determined by a combination of any two of the values included in the second group described above. The interval S5 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

The distance S6 between the first wall surface 32 and the second opening 41 in a plan view may be greater than the distance S5. This can prevent a shadow from being generated in the second opening 41 close to the first wall surface 32.

The second layer 40 may include an alignment mark. The alignment mark of the second layer 40 may be formed separately from the alignment mark 39 of the first layer 30, or may be formed in place of the alignment mark 39 of the first layer 30.

Next, the intermediate layer 50 will be described. The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the second layer 40. For example, the intermediate layer 50 includes a first intermediate layer 51. In the example shown in FIG. 5B, the first intermediate layer 51 is located between the first layer 30 and the second layer 40.

The first intermediate layer 51 may function as a stopper layer that stops etching in the process of processing the first layer 30 by etching. Specifically, the first intermediate layer 51 has resistance to an etchant that etches the first layer 30. The first intermediate layer 51 may contain aluminum, an aluminum alloy, titanium, or a titanium alloy. The first intermediate layer 51 may contain an inorganic compound such as silicon oxide.

When the first intermediate layer 51 is a stopper layer, the thickness of the first intermediate layer 51 is not particularly limited as long as it can suppress etching of the second layer 40 in the process of processing the first layer 30. For example, the thickness of the first intermediate layer 51 may be smaller than the thickness of the second layer 40, or may be greater than or equal to the thickness of the second layer 40. The thickness of the first intermediate layer 51 may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the first intermediate layer 51 may be, for example, 1 μm or less, 10 μm or less, or 100 μm or less. The range of thicknesses of the first intermediate layer 51 may be determined by a first group consisting of 5 nm, 50 nm, and 75 nm, and/or a second group consisting of 1 μm, 10 μm, and 100 μm. The range of thicknesses of the first intermediate layer 51 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The thickness range of the first intermediate layer 51 may be determined by a combination of any two of the values included in the first group described above. The thickness range of the first intermediate layer 51 may be determined by a combination of any two of the values included in the second group described above. The thickness of the first intermediate layer 51 may be, for example, 5 nm or more and 100 μm or less, 5 nm or more and 10 μm or less, 5 nm or more and 1 μm or less, 5 nm or more and 75 nm or less, 5 nm or more and 50 nm or less, 50 nm or more and 100 μm or less, 50 nm or more and 10 μm or less, 50 nm or more and 1 μm or less, 50 nm or more and 75 nm or less, 75 nm or more and 100 μm or less, 75 nm or more and 10 μm or less, 75 nm or more and 1 μm or less, 1 μm or more and 100 μm or less, 1 μm or more and 10 μm or less, or 10 μm or more and 100 μm or less. The higher the resistance of the first intermediate layer 51 to the etchant for the first layer 30, the smaller the thickness of the first intermediate layer 51 can be. It is particularly preferable that the thickness of the first intermediate layer 51 is 1 μm or less.

The intermediate layer 50 may include a layer that functions to bond the first layer 30 and the second layer 40. For example, the first intermediate layer 51 may be a bonding layer containing an adhesive. The thickness of the bonding layer may be, for example, 0.1 μm or more, 0.2 μm or more, or 0.5 μm or more. The thickness of the bonding layer may be, for example, 1 μm or less, 2 μm or less, or 3 μm or less. The range of thicknesses of the bonding layer may be determined by a first group consisting of 0.1 μm, 0.2 μm, and 0.5 μm, and/or a second group consisting of 1 μm, 2 μm, and 3 μm. The range of thicknesses of the bonding layer may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of thicknesses of the bonding layer may be determined by a combination of any two of the values included in the first group described above. The range of thicknesses of the bonding layer may be determined by a combination of any two of the values included in the second group described above. The thickness of the bonding layer may be, for example, 0.1 μm or more and 3 μm or less, 0.1 μm or more and 2 μm or less, 0.1 μm or more and 1 μm or less, 0.1 μm or more and 0.5 μm or less, 0.1 μm or more and 0.2 μm or less, 0.2 μm or more and 3 μm or less, 0.2 μm or more and 2 μm or less, 0.2 μm or more and 1 μm or less, 0.2 μm or more and 0.5 μm or less, 0.5 μm or more and 3 μm or less, 0.5 μm or more and 2 μm or less, 0.5 μm or more and 1 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, or 2 μm or more and 3 μm or less.

Preferably, the intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. This makes it possible to prevent a shadow caused by the intermediate layer 50 from being generated.

The first intermediate layer 51 may include an alignment mark. The alignment mark of the first intermediate layer 51 may be formed separately from the alignment mark of the first layer 30 or the second layer 40, or may be formed in place of the alignment mark of the first layer 30 or the second layer 40.

Next, the frame 60 will be described in detail. The frame 60 is attached to the mask 20 for the purpose of being held when handling the mask 20, for example, when moving the mask 20. As shown in FIG. 3A and other figures, the mask 20 has the second opening 41, and therefore the first opening 31, formed up to the vicinity of its outer edge. When handling the mask 20, for example, when moving the mask 20, it is desirable to hold the area outside the area where the second opening 41 is formed in order to prevent deformation of the second opening 41 of the second layer 40, but since the first opening 31 is formed up to the vicinity of the outer edge 303 of the first layer 30, the width of the outer area 35 is insufficient to hold the mask 20. In addition, since the first opening 31 is formed up to the vicinity of the outer edge 303 of the first layer 30, the outer area 35 is narrow. The narrow outer area 35 is particularly prone to damage when the first layer 30 contains silicon. By attaching the frame 60 to such a mask 20, the frame 60 can be grasped when handling the mask 20, and the risk of damage to the first layer 30 is reduced. As a result, the mask 20 is easier to handle.

As can be seen from Figures 3A to 5B, the frame 60 includes a fifth surface 601 and a sixth surface 602. The fifth surface 601 faces the same side as the fourth surface 402. The sixth surface 602 is located on the opposite side of the fifth surface 601. In the illustrated example, the fifth surface 601 and the first surface 301 face each other. Note that the frame 60 is parallel to the second layer 40 so that the second layer 40 is horizontal when the framed mask 15 is supported by the mask holder 9 of the deposition device 10.

5A and 5B, the frame 60 is connected to the first surface 301 of the outer region 35. In the illustrated example, a connection layer 70 is disposed between the first surface 301 of the outer region 35 and the fifth surface 601 of the frame 60. The frame 60 is connected to the first layer 30 via the connection layer 70. In a plan view, the frame 60 does not overlap with the first opening 31. Also, in a plan view, at least a portion of the frame 60 extends to the outside of the outer edge 303 of the first layer 30. This allows the frame 60 to expand the area for gripping when handling the mask 20.

The frame 60 includes a glass material or a metal material. The glass material is quartz glass, borosilicate glass, alkali-free glass, soda glass, etc. The metal material is invar material or stainless steel such as SUS430 or SUS304. By including these materials in the frame 60, the rigidity of the frame 60 can be made higher than that of the first layer 30. The material of the frame 60 may be determined so that the frame 60 has the required rigidity, taking into consideration the gripping strength of the worker or robot hand handling the framed mask 15.

Furthermore, it is preferable that the linear thermal expansion coefficient of the frame 60 is approximately the same as the linear thermal expansion coefficient of the first layer 30. This allows the elongation rates of the frame 60 and the first layer 30 to be approximately the same when the framed mask 15 is heated. As a result, the risk of damage to the first layer 30 is suppressed. Specifically, the absolute value of the difference between the linear thermal expansion coefficient of the frame 60 and the linear thermal expansion coefficient of the first layer 30 is 15 ppm/°C or less, may be 10 ppm/°C or less, or may be 5.0 ppm/°C or less.

In the illustrated example, the frame 60 is formed in an annular shape. The frame 60 has a region that extends circumferentially outside the outer edge 303 of the first layer 30 in a plan view. This effectively prevents the outer region 35 of the first layer 30 from being damaged when the mask 20 is handled. More specifically, a third opening 61 that penetrates from the fifth surface 601 to the sixth surface 602 is formed in the center of the frame 60. In the illustrated example, the third opening 61 is similar in shape to the outer edge 303 of the first layer 30. The maximum dimension S9 of the third opening 61 is smaller than the maximum dimension S1 of the outer edge 303 of the first layer 30. In a plan view, the third opening 61 overlaps the first opening 31. In the illustrated example, in a plan view, the third opening 61 also overlaps the inner region 36 of the first layer 30. In other words, in a plan view, the third opening 61 overlaps all of the first openings 31.

The shape and dimensions of the outer edge 603 of the frame 60 are not particularly limited. The shape and dimensions S10 of the outer edge 603 of the frame 60 may be determined based on the dimensions and shapes of the hands of the worker or robot hand handling the framed mask 15, and the dimensions and shapes of the mask holder 9 of the deposition apparatus 10. The outer edge 603 of the frame 60 may be rectangular or other polygonal. The dimensions S10 of the outer edge 603 of the frame 60 may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. The dimensions S10 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of the dimensions S10 may be determined by a first group consisting of 100 mm, 150 mm, and 200 mm, and/or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of dimension S10 may be defined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. The range of dimension S10 may be defined by a combination of any two of the values included in the above-mentioned first group. The range of dimension S10 may be defined by a combination of any two of the values included in the above-mentioned second group. The dimension S10 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 400 mm or less, 200 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.

The distance S11 between the outer edge 603 of the frame 60 and the outer edge 303 of the first layer 30 may also be determined based on the dimensions and shape of the hand of the worker or the robot hand handling the framed mask 15, and the dimensions and shape of the mask holder 9 of the deposition apparatus 10. The distance S11 may be, for example, 5 mm or more, 10 mm or more, or 15 mm or more. The distance S11 may be, for example, 30 mm or less, 60 mm or less, or 100 mm or less. The range of the distance S11 may be determined by a first group consisting of 5 mm, 10 mm, and 15 mm, and/or a second group consisting of 30 mm, 60 mm, and 100 mm. The range of the distance S11 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the distance S11 may be determined by a combination of any two of the values included in the first group described above. The range of the distance S11 may be determined by a combination of any two of the values included in the second group described above. For example, the distance S11 may be 5 mm or more and 100 mm or less, 5 mm or more and 60 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 15 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 60 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 15 mm or less, 15 mm or more and 100 mm or less, 15 mm or more and 60 mm or less, 15 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 60 mm or less, or 60 mm or more and 100 mm or less.

The thickness T2 of the frame 60 is not particularly limited. The thickness T2 may also be determined based on the dimensions and shape of the hand of the worker or the robot hand handling the framed mask 15, and the dimensions and shape of the mask holder 9 of the deposition apparatus 10. The thickness T2 may be, for example, 500 μm or more, 2 mm or more, or 5 mm or more. The thickness T2 may be, for example, 10 mm or less, 20 mm or less, or 30 mm or less. The range of the thickness T2 may be determined by a first group consisting of 500 μm, 2 mm, and 5 mm, and/or a second group consisting of 10 mm, 20 mm, and 30 mm. The range of the thickness T2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness T2 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness T2 may be determined by a combination of any two of the values included in the second group described above. The thickness T2 may be, for example, 500 μm or more and 30 mm or less, 500 μm or more and 20 mm or less, 500 μm or more and 10 mm or less, 500 μm or more and 5 mm or less, 500 μm or more and 2 mm or less, 2 mm or more and 30 mm or less, 2 mm or more and 20 mm or less, 2 mm or more and 10 mm or less, 2 mm or more and 5 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, or 20 mm or more and 30 mm or less.

By determining the shape and dimensions of the outer edge 603 of the frame 60 and the thickness T2 of the frame 60 based on the dimensions and shape of the robot hand that handles the framed mask 15 and the dimensions and shape of the mask holder 9 of the deposition apparatus 10, the shape and dimensions of the framed mask 15 can be made suitable for existing robot hands and existing deposition apparatus 10. In other words, there is no need to make the shape and dimensions of the mask 20 suitable for existing robot hands and existing deposition apparatus 10, and the freedom in designing the mask 20 is improved.

In the illustrated example, the fifth surface 601 of the frame 60 is located closer to the first surface 301 of the first layer 30 than the fourth surface 402 of the second layer 40. In other words, the second layer 40 protrudes from the fifth surface 601 of the frame 60. This allows the second layer 40 to come into contact with the substrate 110 or a component on the substrate 110 when a deposition layer is formed on the substrate 110 or a component on the substrate 110 through the mask 20.

The frame 60 may include an alignment mark. This makes it easy to position the mask 20 with respect to the frame 60 when attaching the frame 60 to the mask 20. The alignment mark formed on the frame 60 can also be used to adjust the relative position of the substrate 110 with respect to the mask 20. For example, even if the alignment mark 39 is formed on the first layer 30, if the second layer 40 is formed up to the outer edge 303 of the first layer 30, the alignment mark 39 is covered by the second layer 40, making it difficult to adjust the position of the substrate 110 with respect to the mask 20 while observing the alignment mark 39. In this case, by forming an alignment mark mask on the frame 60, the position of the substrate 110 with respect to the framed mask 15, and therefore with respect to the mask 20, can be adjusted.

In the example shown in Figures 5A and 5B, the frame 60 is connected to the first layer 30 via a connection layer 70. In the example shown in Figure 6, a spacer 75 is disposed between the frame 60 and the first layer 30. Figure 6 is an enlarged view of the area surrounded by the two-dot chain line in the cross-sectional view of Figure 5B. In the example shown in Figure 6, the connection layer 70 and the spacer 75 are disposed between the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30.

The connection layer 70 fixes the frame 60 to the first layer 30 by adhesion, adhesion or welding. The connection layer 70 may include a glass material, an inorganic material, a metal material or a resin material. The connection layer 70 may be formed of glass frit, glass paste, solder paste, conductive paste, epoxy resin, polyimide, acrylic resin, etc. In order to suppress the generation of outgassing from the connection layer 70 during the deposition process in the deposition device 10, for example, the high heat resistant epoxy adhesive "AREMCOBOND 526N" manufactured by Aremco Products, Inc., or the UV curing adhesive "WORLDROCK (registered trademark) 5910 (product number)" or "WORLDROCK (registered trademark) 8723K9B (product number)" manufactured by Kyoritsu Chemical Industry Co., Ltd. can be used as a material for forming the connection layer 70. Furthermore, by using a material with high solvent resistance as the material for forming the connection layer 70, it is possible to suppress the risk that the connection layer 70 in contact with the cleaning liquid will deform and the frame 60 will separate from the mask 20 when the framed mask 15 used in the deposition process is washed to remove the deposition material. In this case, for example, an ultraviolet-curing adhesive "ThreeBond (registered trademark) 3026E (product name)" manufactured by ThreeBond Co., Ltd. can be used as the material for forming the connection layer 70. Furthermore, by using a material that can be peeled off from the frame 60 and the mask 20 as the connection layer 70, it is possible to reuse the frame 60 and the mask 20. In this case, for example, the double-sided peel-off adhesive "BBX100 (product name)" manufactured by Cemedine Co., Ltd., the visible light curing adhesive "Clearpresto (registered trademark) CP4374 (product name)" or "Clearpresto (registered trademark) K40 (product name)" manufactured by Sekisui Fuller Co., Ltd., and the cyanoacrylate instant adhesive "Skylock (registered trademark) R-4" manufactured by Nikka Seiko Co., Ltd. can be used as the material for forming the connection layer 70.

The thickness of the connection layer 70 may be, for example, 0.05 μm or more, 5 μm or more, or 10 μm or more. The thickness of the connection layer 70 may be, for example, 20 μm or less, 50 μm or less, or 100 μm or less. The thickness range of the connection layer 70 may be determined by a first group consisting of 0.05 μm, 5 μm, and 10 μm, and/or a second group consisting of 20 μm, 50 μm, and 100 μm. The thickness range of the connection layer 70 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The thickness range of the connection layer 70 may be determined by a combination of any two of the values included in the first group described above. The thickness range of the connection layer 70 may be determined by a combination of any two of the values included in the second group described above. The thickness of the connection layer 70 may be, for example, 0.05 μm or more and 100 μm or less, 0.05 μm or more and 50 μm or less, 0.05 μm or more and 20 μm or less, 0.05 μm or more and 10 μm or less, 0.05 μm or more and 5 μm or less, 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less.

The spacer 75 is disposed between the frame 60 and the first layer 30 in order to make the distance between the frame 60 and the first layer 30 uniform. In particular, when the connection layer 70 and the spacer 75 are disposed between the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30, the thickness of the connection layer 70 can be made uniform according to the dimensions of the spacer 75 simply by pressing the frame 60 against the first layer 30. By making the distance between the frame 60 and the first layer 30 uniform, the frame 60 and the second layer 40 can be easily made parallel.

The spacer 75 is, for example, a spherical bead. The diameter of the spacer 75 may be, for example, 1 μm or more, 5 μm or more, or 10 μm or more. The diameter of the spacer 75 may be, for example, 20 μm or less, 50 μm or less, or 100 μm or less. The diameter range of the spacer 75 may be determined by a first group consisting of 1 μm, 5 μm, and 10 μm, and/or a second group consisting of 20 μm, 50 μm, and 100 μm. The diameter range of the spacer 75 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The diameter range of the spacer 75 may be determined by a combination of any two of the values included in the first group described above. The diameter range of the spacer 75 may be determined by a combination of any two of the values included in the second group described above. The diameter of the spacer 75 may be, for example, 1 μm or more and 100 μm or less, 1 μm or more and 50 μm or less, 1 μm or more and 20 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 5 μm or more and 100 μm or less, 5 μm or more and 50 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 20 μm or less, 20 μm or more and 100 μm or less, 20 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less.

The material from which the spacer 75 is formed is not particularly limited. The spacer 75 may contain, for example, glass, acrylic, urethane, polystyrene, polytetrafluoroethylene (PTFE), or other resin.

The spacers 75 may be included in the connection layer 70. In other words, the connection layer 70 may be formed of a material that includes the spacers 75. This allows the spacers 75 to be disposed at the same time as the connection layer 70 is formed.

The thickness of each layer, the dimensions of each component, the spacing, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

(Method of manufacturing a framed mask)
Next, a method for manufacturing a framed mask according to the present embodiment will be described with reference to FIGS. 7 to 13. First, a method for manufacturing a mask 20 will be described. First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.

Next, as shown in FIG. 7, an intermediate layer formation process is carried out to form an intermediate layer 50 on the second surface 302 of the first layer 30. The intermediate layer 50 includes, for example, a first intermediate layer 51. The intermediate layer 50 may be formed on the entire second surface 302. The intermediate layer 50 may be formed by a vacuum film formation method such as a sputtering method.

Next, as shown in FIG. 8, a second layer formation step is carried out in which the second layer 40 is formed on the intermediate layer 50. This makes it possible to obtain a laminate 22 including the first layer 30, the intermediate layer 50, and the second layer 40. The second layer 40 may be formed over the entire intermediate layer 50.

The second layer 40 may be formed, for example, by a plating process. Here, the second layer 40 is formed by an electrolytic plating process using the intermediate layer 50 as a power supply electrode. More specifically, a plating solution is supplied to the surface of the intermediate layer 50 opposite the first layer 30. For example, the intermediate layer 50 together with the first layer 30 is immersed in a plating tank filled with a plating solution. Components of the plating solution are precipitated on the surface of the intermediate layer 50 opposite the first layer 30, forming the second layer 40. In this way, the second layer 40 is attached to the intermediate layer 50.

The components of the plating solution used are appropriately determined according to the characteristics required for the second layer 40. For example, when the second layer 40 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound may be used as the plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate may be used. Also, when the second layer 40 is made of nickel, a solution containing a nickel compound may be used as the plating solution. For example, a nickel sulfamate solution may be used. Also, when the second layer 40 is made of a nickel alloy containing cobalt, a mixed solution of a solution containing a nickel compound and a solution containing a cobalt compound may be used as the plating solution. For example, a cobalt sulfamate solution may be used. Note that each of the above-mentioned plating solutions may contain various additives. Examples of additives include pH buffers such as boric acid, and additives such as malonic acid and saccharin.

After the second layer 40 is formed, the second layer 40 may be annealed (fired). This allows the second layer 40 formed by the plating process to be recrystallized, and the thermal expansion coefficient of the second layer 40 to be reduced. That is, in general, even if a rolled material produced by a rolling process and a plated material produced by a plating process have the same material components, the thermal expansion coefficient of the plated material tends to be higher than the thermal expansion coefficient of the rolled material. For this reason, the second layer 40 may be recrystallized to reduce the thermal expansion coefficient of the second layer 40. During such an annealing process, the second layer 40 may be heated, for example, at a temperature of 600°C for 5 minutes.

In the second layer forming process, the specific plating method is not particularly limited as long as the second layer 40 can be formed. For example, electroless plating may be performed instead of electrolytic plating. When electroless plating is performed, since there are no electrodes as in electrolytic plating, the thickness of the second layer 40 formed by electroless plating can be made uniform. When electroless plating is performed, a catalyst layer (not shown) may be provided on the surface of the intermediate layer 50 opposite the first layer 30. Even when electrolytic plating is performed, a similar catalyst layer may be provided on the intermediate layer 50.

Although not shown, a pressing step may be performed to press the second layer 40. For example, the surface of a substrate, such as a silicon wafer or a glass wafer, other than the first layer 30 may be pressed against the second layer 40. If the surface of the substrate is flatter than the fourth surface 402 of the second layer 40, the pressing step can increase the flatness of the fourth surface 402. The surface of the substrate may include an uneven pattern. In this case, the pressing step can impart an uneven pattern to the fourth surface 402. The pressing step may be performed before the step of annealing the second layer 40.

Although not shown, the laminate 22 may have a protective layer located on the fourth surface 402 of the second layer 40. The protective layer includes, for example, the same material as the material of the first intermediate layer 51. By forming the protective layer on the fourth surface 402, etching of the fourth surface 402 can be suppressed in the first processing step described below. The protective layer may be removed at the same time as the first intermediate layer 51.

Next, as shown in FIG. 9, a resist formation process is carried out to partially form a resist layer 38 on the first surface 301 of the first layer 30. A resist opening 381 facing the first opening 31 is formed in the resist layer 38.

The resist layer 38 may be a photoresist. In this case, the resist layer 38 is formed on the first surface 301 by first coating the first surface 301 with a liquid resist material. After coating, a step of heating the resist layer 38 may be performed. Then, a photolithography process is performed in which the resist layer 38 is exposed and developed. This allows resist openings 381 to be formed in the resist layer 38.

Although not shown, the resist layer 38 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation process on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the second layer 40 are laminated on the first layer 30.

Subsequently, as shown in FIG. 10, a first processing step is performed in which the first layer 30 is etched from the first surface 301 side to form a first opening 31 in the first layer 30. The etching in the first processing step may be dry etching using an etching gas. The etching gas is an example of the etchant mentioned above. Since the intermediate layer 50 is resistant to the etchant, as shown in FIG. 10, the etching can be prevented from progressing to the second layer 40.

When the etching process is deep reactive ion etching, the etching process is carried out, for example, as follows. That is, an etching gas is introduced into a chamber. A voltage is applied to the space in the chamber to convert the etching gas into plasma. Radicals, ions, etc. in the plasma pass through the resist opening 381 and collide with the first surface 301, thereby forming a first opening 31 in the first layer 30, as shown in FIG. 10. The etching gas is, for example, _SF6 gas.

After the hole reaches the intermediate layer 50, a resist removal step may be performed to remove the resist layer 38. For example, a resist processing liquid is supplied to the first surface 301.
When the resist layer 38 is a photoresist, the resist processing solution contains, for example, N-methyl-2-pyrrolidone. The resist layer 38 may be removed by irradiating the resist layer 38 with oxygen plasma.
When the resist layer 38 is a silicon oxide film, the resist processing solution contains, for example, hydrofluoric acid. The resist layer 38 may be removed by dry etching using _CF4 gas or the like.

After the first processing step, an intermediate layer removal step may be performed to remove the intermediate layer 50. For example, an etchant for the intermediate layer 50 is supplied to the first opening 31. This allows the intermediate layer 50 that overlaps the first opening 31 in a plan view to be removed, as shown in FIG. 11. The etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or wet etching using an acidic etching solution.

The order of the resist removal process and the intermediate layer removal process is not particularly limited. The resist removal process and the intermediate layer removal process may be performed simultaneously.

Then, a second processing step is performed to form a plurality of second openings 41 in the second layer 40. For example, as shown in FIG. 12, a laser L is irradiated onto the third surface 401 of the second layer 40. This allows the second openings 41 to be formed in the second layer 40. As the laser L, a KrF excimer laser with a wavelength of 248 nm, a YAG laser with a wavelength of 355 nm, or the like can be used.

The second processing step may be performed in a state where a protective film or protective layer is formed on the fourth surface 402 of the second layer 40 .
The protective film is a member that is attached to the fourth surface 402. The protective film includes, for example, a resin film and an adhesive layer. The protective film is attached to the fourth surface 402 such that the adhesive layer is in contact with the fourth surface 402. The adhesive layer may be a pressure-sensitive adhesive layer or an adsorption layer.
The protective film is formed by applying a liquid containing a resin onto the fourth surface 402. Examples of the application method include a bar coating method, a spin coating method, and a spray coating method.
The protective film or coating may be removed after the second processing step is completed.
Preferably, the reactivity of the protective film or protective coating to the laser is lower than that of the second layer 40. The reactivity is the speed at which the protective film or protective coating or the second layer 40 is processed by the laser.

In the second processing step, first, the laminate 22 is placed on a stage so that the fourth surface 402 faces the stage surface. Next, the position of the irradiation head relative to the laminate 22 is adjusted. In the step of adjusting the position, the irradiation head may be moved, or the stage may be moved. By repeatedly performing the laser irradiation and position adjustment, a plurality of second openings 41 can be formed in the second layer 40. In this manner, the mask 20 can be obtained.

Alternatively, a laser mask corresponding to the pattern of the multiple second openings 41 may be used. In this case, a focusing lens may be placed between the laser mask and the second layer 40. The multiple second openings 41 can be formed by a laser processing method using a reduced projection optical system.

One second opening 41 may be formed by one laser shot.
One second opening 41 may be formed by two or more laser shots. In this case, the depth of a recess formed in the second layer 40 by one laser shot is smaller than the thickness of the second layer 40.

The laser may be adjusted so that the second wall surface 42 of the second opening 41 includes a tapered surface 42a.
For example, the irradiation area of the laser corresponding to the second opening 41 may be changed for each shot. For example, the second processing step may include a first shot step of irradiating the third surface 401 with a laser having a first irradiation area, and a second shot step of irradiating the third surface 401 with a laser having a second irradiation area larger than the first irradiation area. The first irradiation area may correspond to the area of the second opening 41 on the fourth surface 402. The second irradiation area may correspond to the area of the second opening 41 on the third surface 401. The second processing step may include three or more shot steps. The irradiation area and intensity of the laser in each shot step are set so that the second wall surface 42 includes the tapered surface 42a.
For example, one transmitting portion of the laser mask may include a first transmitting region having a first transmittance and a second transmitting region having a second transmittance lower than the first transmittance. The outline of the first transmitting region may correspond to the outline of the second opening 41 on the fourth surface 402. The second transmitting region may surround the first transmitting region in a plan view. The outline of the second transmitting region may correspond to the outline of the second opening 41 on the third surface 401. One transmitting portion may include three or more transmitting regions. The shape and transmittance of each transmitting region are set so that the second wall surface 42 includes a tapered surface 42a.

As described above, the second layer 40 in this embodiment is formed by plating. In this case, stress remains in the second layer 40, acting in a direction that causes it to shrink in plan view. As a result, even if the temperature of the second layer 40 rises and the second layer 40 thermally expands, for example, during deposition, the positional accuracy of the second opening 41 can be maintained as long as the above-mentioned stress remains.

Next, a method for manufacturing the frame 60 will be described. First, a plate-shaped member containing the above-mentioned glass material or metal material is prepared, and then cut to produce the frame 60 having the third opening 61. A drill, a cutting tool, a milling cutter, an end mill, etc. can be used as a cutting tool for cutting the plate-shaped member.

After the mask 20 and the frame 60 are produced, an attachment process is carried out to attach the frame 60 to the mask 20. Specifically, as shown in FIG. 13, a connection layer 70 is formed circumferentially on the sixth surface 601 of the frame 60 along the edge of the third opening 61. The connection layer 70 may include a spacer 75. The connection layer 70 is softened by heating or the like before connecting the mask 20 to the frame 60.

Next, the mask 20 is supported from the side of the first layer 30 using the support means 80. The support means 80 supports the inner region 36 of the first layer 30 from the side of the first surface 301. Then, the fifth surface 601 of the frame 60 and the first surface 301 of the first layer 30 are made to face each other, and the support means 80 is moved to bring the mask 20 close to the connection layer 70 on the frame 60. At this time, the alignment mark of the frame 60 and the alignment mark of the mask 20 are used to position the mask 20 relative to the frame 60. If the mask 20 is warped, a pressing means opposed to the support means 80 is used to correct the warp while bringing the mask 20 close to the connection layer 70.

Next, a pressing process is carried out in which the mask 20 and the frame 60 are pressed against each other. This causes the connection layer 70 to be crushed, and the thickness of the connection layer 70 becomes uniform. Specifically, the thickness of the connection layer 70 becomes uniform according to the dimensions of the spacer 75. This causes the second layer 40 and the frame 60 to become parallel.

Then, the connection layer 70 is hardened by cooling or the like, and the mask 20 and the frame 60 are fixed to each other. In this manner, the framed mask 15 can be obtained.

Next, an example of a method for manufacturing an organic device 100 using a framed mask 15 will be described.

First, a substrate 110 on which a first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum film-forming method or the like, and then patterning the conductive layer by a photolithography method or the like. The patterning of the conductive layer may be performed using an apparatus that performs a semiconductor manufacturing process. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

Then, the organic layer 130 including the first organic layer 130A, the second organic layer 130B, etc. is formed on the first electrode 120. For example, first, the framed mask 15 including the first mask 20 is placed in the deposition apparatus 10, and the first organic layer 130A is formed by a deposition method using the first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, the framed mask 15 including the second mask 20 is placed in the deposition apparatus 10, and the second organic layer 130B is formed by a deposition method using the second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, the framed mask 15 including the third mask 20 is placed in the deposition apparatus 10, and the third organic layer is formed by a deposition method using the third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer. When the framed mask 15 is placed in the deposition apparatus 10 and removed from the deposition apparatus 10, the frame 60 is grasped. This reduces the risk of the first layer 30 being damaged or the second layer 40 being deformed. In addition, the frame 60 is supported by the mask holder 9 in the deposition apparatus 10. This reduces the risk of the mask holder 9 interfering with the first opening 31 of the first layer 30 or the second opening 41 of the second layer 40. In other words, the risk of the mask holder 9 interfering with the deposition material being attached to the substrate 110 is reduced.

Then, the second electrode 140 is formed on the organic layer 130. For example, as shown in FIG. 1, the second electrode 140 may be formed on the entire first surface 111 by a vacuum film-forming method or the like. Alternatively, although not shown, the second electrode 140 may be formed by a deposition method using a mask 20, similar to the organic layer 130. Thereafter, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this manner, the organic device 100 can be obtained.

Multiple organic devices 100 may be formed on one substrate 110. One organic device 100 may correspond to one first opening 31 of the mask 20. In this case, a process of cutting the substrate 110 may be carried out. For example, the substrate 110 is cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. In this way, multiple organic devices 100 can be obtained.

The effect of the mask 20 will be explained when forming the organic layer 130, the second electrode 140, etc. by a vapor deposition method using the mask 20.

The mask 20 includes a first layer 30 that contains silicon or a silicon compound. Therefore, when the substrate 110 contains silicon, it is possible to suppress the occurrence of a difference between the thermal expansion occurring in the substrate 110 and the thermal expansion occurring in the mask 20. This makes it possible to suppress the deterioration of the accuracy of the position, shape, etc. of the deposition layers such as the organic layer 130 and the second electrode 140 caused by the thermal expansion of the mask 20. Therefore, it is possible to provide an organic device 100 with a high element density.

The mask 20 includes a second layer 40 that includes a plurality of second openings 41. By providing the second layer 40 separately from the first layer 30, the thickness of the second layer 40 can be reduced, thereby suppressing the occurrence of shadows during the deposition process. In addition, by appropriately ensuring the spacing S6 between the first wall surface 32 and the second openings 41 in a plan view, the thickness of the first layer 30 can be appropriately ensured while suppressing shadows.

The embodiment described above can be modified in various ways. Below, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the embodiment described above will use the same reference numerals as those used for the corresponding parts in the embodiment described above. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the embodiment described above can also be obtained in the modified examples, the description may be omitted.

For example, the mask 20 may not include an intermediate layer 50 between the first layer 30 and the second layer 40. In this case, the second surface 302 of the first layer 30 and the third surface 401 of the second layer 40 may be directly connected.

Also, the second opening 41 may be formed in the second layer forming step. For example, as shown in FIG. 14A, after the intermediate layer forming step and before the second layer forming step, an insulating layer 55 is formed on the intermediate layer 50. The insulating layer 55 may be formed by a chemical vapor deposition method using tetraethyl silicate Si(OC ₂ H ₅ ) ₄ as a raw material. Next, the insulating layer 55 is partially removed by dry etching or the like, and a plurality of insulating convex portions 56 are formed on the intermediate layer 50 in a pattern corresponding to the second opening 41. The insulating convex portions 56 are formed at positions overlapping with the second openings 41 on the intermediate layer 50 in a plan view. Next, as shown in FIG. 14C, a plating process is performed on the intermediate layer 50 on which the insulating convex portions 56 are formed. Thereby, the second openings 41 can be formed in the second layer 40 at the same time as the second layer 40 is formed.

Also, as shown in FIG. 15, a step 65 may be provided on the inner periphery of the frame 60. The step 65 is recessed in a direction from the fifth surface 601 to the sixth surface 602. The step 65 is formed by a surface 651 that spreads from the inner edge 604 of the frame 60 toward the outer edge 603, and a surface 652 that connects the surface 651 to the fifth surface 601. The distance between the surface 651 and the sixth surface 602 is smaller than the distance between the fifth surface 601 and the sixth surface 602. In this case, the outer edge 303 of the first layer 30 on the first surface 301 side may be accommodated in the step 65, more specifically, in the space defined by the surfaces 651 and 652. In this case, the outer edge 303 of the first layer 30 is surrounded by the frame 60. As a result, the risk of damage to the outer region 35 of the first layer 30 is more effectively suppressed.

When the frame 60 has a step portion 65, as shown in FIG. 15, the connection layer 70 may be disposed not only between the frame 60 and the first surface 301, but also between the frame 60 and the outer edge 303. This allows the frame 60 and the first layer 30 to be more firmly connected.

Alternatively, if the frame 60 has a step portion 65, as shown in FIG. 16, the connection layer 70 may not be disposed between the frame 60 and the first surface 301, but may be disposed only between the frame 60 and the outer edge 303. In this case, since the connection layer 70 is not disposed between the frame 60 and the first surface 301, there is no need to adjust the thickness of the connection layer 70 to make the frame 60 and the second layer 40 parallel.

Also, if the frame 60 has a step portion 65, the fifth surface 601 of the frame 60 may be flush with the fourth surface 402. In this case, too, when forming a deposition layer on the substrate 110 or a component on the substrate 110 through the mask 20, the second layer 40 can be brought into contact with the substrate 110 or a component on the substrate 110.

FIG. 17 is a diagram showing an example of an apparatus 200 including an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal is, for example, a smart glass, a head-mounted display, or the like.

The multiple components disclosed in the above embodiments and modifications may be combined as needed. Alternatively, some components may be deleted from all the components shown in the above embodiments and modifications.

10: deposition device, 15: framed mask, 20: mask, 201: incident surface, 202: exit surface, 30: first layer, 301: first surface, 302: second surface, 31: first opening, 32: first wall surface, 40: second layer, 401: third surface, 402: fourth surface, 41: second opening, 43: peripheral region, 44: effective region, 50: intermediate layer, 51: first intermediate layer, 60: frame, 601: fifth surface, 602: sixth surface, 61: third opening, 65: step portion, 70: connection layer, 75: spacer, 100: organic device

Claims

a first layer including a first surface, a second surface located on the opposite side of the first surface, at least one first opening penetrating from the first surface to the second surface, an outer edge, and an outer region located between the outer edge and the first opening in a plan view;
a second layer including a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first openings in a plan view;
a frame connecting to an outer edge of the first layer and/or to the first surface of the outer region of the first layer;
Including,
the first layer comprises silicon;
In a plan view, at least a portion of the frame extends to an outside of the outer edge of the first layer,
A framed mask, wherein the frame comprises glass or metal.
The framed mask of claim 1, wherein the frame includes a fifth surface facing the same side as the fourth surface, a sixth surface located on the opposite side of the fifth surface, and a third opening that penetrates from the fifth surface to the sixth surface and overlaps with the first opening in a plan view.
The framed mask of claim 1, wherein the frame is formed with a stepped portion that accommodates the outer edge of the first layer.
The framed mask of claim 1, having a connection layer between the frame and the first layer.
The framed mask of claim 4, wherein the connection layer includes a glass material, an inorganic material, a metal material, or a resin material.
The framed mask of claim 4, wherein the connection layer includes a spacer.
The framed mask of claim 1, wherein a spacer is disposed between the frame and the first layer.
The framed mask of claim 4, wherein the connection layer is disposed only between the outer edge of the first layer and the frame.
The framed mask of claim 1, comprising an intermediate layer between the first layer and the second layer.
A method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by a deposition method using a framed mask according to any one of claims 1 to 9.