WO2023164228A1

WO2023164228A1 - Crossflow deposition with substrate rotation for enhanced deposition uniformity

Info

Publication number: WO2023164228A1
Application number: PCT/US2023/013978
Authority: WO
Inventors: Jeffrey KHO; Shinichi Kurita; Jinsong XIAO; Jianhua Zhou; Lai ZHAO; Soo Young Choi; Kwang Soo Huh
Original assignee: Applied Materials, Inc.
Priority date: 2022-02-28
Filing date: 2023-02-27
Publication date: 2023-08-31

Abstract

A method includes placing a rectangular substrate in a first deposition chamber of an electronic device manufacturing system, processing the rectangular substrate in the first deposition chamber for a first pass having a first number of deposition cycles, and after processing the rectangular substrate in the first deposition chamber, rotating the rectangular substrate about 180 degrees.

Description

CROSSFLOW DEPOSITION WITH SUBSTRATE ROTATION FOR ENHANCED DEPOSITION UNIFORMITY

TECHNICAL FIELD

[0001] The instant specification generally relates to electronic device fabrication. More specifically, the instant specification relates to crossflow deposition with substrate rotation for enhanced deposition uniformity.

BACKGROUND

[0002] An electronic device manufacturing system can include multiple chambers, such as process chambers and load lock chambers. Such an electronic device manufacturing system can employ a robot apparatus in the transfer chamber that is configured to transport substrates between the multiple chambers. In some instances, multiple substrates are transferred together.

SUMMARY

[0003] In accordance with an embodiment, a system is provided. The system includes a plurality of deposition chambers including a first deposition chamber. The system further includes a rotation chamber, a transfer chamber interfacing with the plurality of deposition chambers and the rotation chamber, and a robot apparatus housed within the transfer chamber. The robot apparatus is configured to place a rectangular substrate in the first deposition chamber to process the rectangular substrate for a first pass having a first number of deposition cycles, and after processing the rectangular substrate for the first pass in the first deposition chamber, transfer the rectangular substrate from the first deposition chamber to the rotation chamber to rotate the rectangular substrate about 180 degrees. The first deposition chamber includes a reactor interface, a flow guide attached to the reactor interface, a reactor frame disposed underneath the reactor interface to secure a substrate, and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force. The flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process. [0004] In accordance with another embodiment, a system is provided. The system includes a plurality of deposition chambers including a first deposition chamber. The system further includes a transfer chamber interfacing with the plurality of deposition chambers, and a robot apparatus housed within the transfer chamber. The robot apparatus is configured to place a rectangular substrate in the first deposition chamber to process the rectangular substrate for a first pass having a first number of deposition cycles. After processing the rectangular substrate for the first pass in the first deposition chamber, the rectangular substrate is rotated about 180 degrees within the system. The first deposition chamber includes a reactor interface, a flow guide attached to the reactor interface, a reactor frame disposed underneath the reactor interface to secure a substrate, and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force. The flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process.

[0005] In accordance with yet another embodiment, a method is provided. The method includes placing a rectangular substrate in a first deposition chamber of an electronic device manufacturing system, processing the rectangular substrate in the first deposition chamber for a first pass having a first number of deposition cycles, and after processing the rectangular substrate in the first deposition chamber, rotating the rectangular substrate about 180 degrees. The first deposition chamber includes a reactor interface, a flow guide attached to the reactor interface, a reactor frame disposed underneath the reactor interface to secure a substrate, and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force. The flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Aspects and implementations of the present disclosure will be understood more fully from the detailed description given below and from the accompanying drawings, which are intended to illustrate aspects and implementations by way of example and not limitation.

[0007] FIG. 1 is cross-sectional view of an example deposition chamber, in accordance with some embodiments.

[0008] FIG. 2A is a cross-sectional view of an example section of a deposition chamber, in accordance with some embodiments.

[0009] FIG. 2B is a close-up view of the section of FIG. 2A, in accordance with some embodiments.

[0010] FIG. 3 is top-down view of an example electronic device manufacturing system that performs crossflow deposition processes with substrate rotation, in accordance with some embodiments.

[0011] FIG. 4A is top-down view of an example electronic device manufacturing system that performs crossflow deposition processes with substrate rotation, in accordance with some embodiments.

[0012] FIG. 4B is top-down view of an example electronic device manufacturing system that performs crossflow deposition processes with substrate, in accordance with some embodiments.

[0013] FIGS. 5A-5C are cross-sectional diagrams illustrating an example process flow for implementing an electronic device manufacturing system to perform crossflow deposition processes with substrate rotation, in accordance with some embodiments.

[0014] FIGS. 6A-6C are diagrams illustrating example phases for rotating substrates within an electronic device manufacturing system, in accordance with some embodiments. [0015] FIG. 7 is a flow chart of a method for implementing an electronic device manufacturing system to perform crossflow deposition processes with substrate rotation for enhanced deposition uniformity, in accordance with some embodiments.

DETAILED DESCRIPTION

[0016] One example of a process chamber is a deposition chamber, such as a thin film deposition chamber, in which a material is deposited over a substrate resting on a platform in the deposition chamber. For example, the substrate canbe a glass substrate. In some instances, the substrate canbe a rectangular substrate. For example, the rectangular substrate can be a large rectangular substrate that is processed to create displays for electronic devices (e.g., mobile device display, television displays). In some implementations, a process chamber is as an atomic layer deposition (ALD) chamber. Within an ALD chamber, material can be deposited by employing a unidirectional cross flow. The rectangular substrate can be secured by a reactor frame. The reactor frame is designed to secure a substrate disposed on a susceptor upon loading of the rectangular substrate within the reactor, and provide the material deposition (e.g., film deposition) boundary for the deposition process. A susceptor includes a material that can either heat or cool the rectangular substrate disposed thereon to a temperature within a certain range. Susceptor design (e.g., material choice) can depend on the reactor operating temperature(s). In some embodiments, the reactor frame is a mask frame or a shadow frame. A mask frame or a shadow frame is designed to hold a substrate in place during the deposition process and can function as a stencil to define the film deposition boundary area on the rectangular substrate. For example, a mask frame can be used for smaller electronic devices, such as mobile phones, while a shadowframe can be used for larger electronic devices, such as televisions. A flow guide can be used to direct process gas flow either into, or out of, the reactor.

[0017] Deposition is typically performed in a deposition chamber by flowing a process gas over the substrate from a first side of the deposition chamber to a second side of the deposition chamber opposite the first side. The process gas can include chemical precursors that react at the surface of the substrate to deposit material layers on the substrate. The reaction of the chemical precursors atthe substrate surface can result in a change in gas composition due to the depletion of the chemical precursors in the direction of gas flow. This can lead to reduced uniformity (e.g., a deposition gradient) as a function of distance from the first side of the deposition chamber. Accordingly, this depletion phenomenon can negatively affect material quality.

[0018] Aspects and implementations of the present disclosure address these and other shortcomings of existing technologies by providingfor crossflow deposition with substrate rotation for enhanced deposition. An electronic device processing system can include a number of deposition chambers. In some embodiments, the deposition chambers include ALD chambers. Each deposition chamber can have a unidirectional crossflow design to provide a process gas flow for depositing a material onto a rectangular substrate. More specifically, the unidirectional crossflow design can provide a process gas flow across the rectangular substrate that proceeds in a direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber.

[0019] To perform a crossflow deposition process with substrate rotation, a process gas can flow from a first side of a rectangular substrate to a second side of the rectangular substrate for a first pass of the material deposition process having a certain number of deposition cycles (e.g., half of the total number of deposition cycles). Then, the rectangular substrate can be rotated about 180 degrees about a vertical axis. In some embodiments, the rotation is clockwise. In some embodiments, the rotation is counterclockwise. After rotation, a process gas can flow from the second side of the rectangular substrate to the first side of the rectangular substrate for a second pass of the material deposition process having the remaining number of deposition cycles. That is, the 180 degree rotation of the rectangular substrate can average outthe reaction/depletion rate to support process uniformity (e.g., deposition uniformity or etch uniformity) along the entire surface of the rectangular substrate.

[0020] The electronic device processing system can further include a transfer chamber housing a robot apparatus, and at least one load lock chamber. The robot apparatus is configured to transfer rectangular substrates between chambers. For example, the robot apparatus can place a rectangular substrate into a deposition chamber to perform the first pass.

[0021] In some embodiments, the rectangular substrate is rotated within a designated rotation chamber that rotates the rectangular substrate about 180 degrees after the first pass. In these embodiments, the robot apparatus can, after the first pass is performed in the deposition chamber, transfer the rectangular substrate from the deposition chamber to the rotation chamber. For example, the robot apparatus can extend at least one arm into the deposition chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the rotation chamber, and extend the at least one arm into the rotation chamber to place the rectangular substrate within the rotation chamber. Then, after the rotation of the rectangular substrate within the rotation chamber, the robot apparatus can transfer the rectangular substrate from the rotation chamberto a second deposition chamber (e.g., the same deposition chamber or a deposition chamber different from the previous deposition chamber) to perform the second pass. For example, the robot apparatus can extend the at least one arm into the rotation chamberto obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the second deposition chamber, and extend the at least one arm into the second deposition chamber to place the rectangular substrate within the second deposition chamber. After the second pass is performed, the robot apparatus can transfer the rectangular substrate from the second deposition chamber to a load lock chamber. For example, the robot apparatus can extend at least one arm into the second deposition chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the load lock chamber, and extend the at least one arm into the load lock chamber to place the rectangular sub strate within the load lock chamber.

[0022] In some embodiments, the deposition chamber is configured to rotate the rectangular substrate about 180 degrees after the first pass. In these embodiments, the deposition chamber can perform the second pass after the rotation. The robot apparatus can, after the second pass is performed in the deposition chamber, transfer the rectangular substrate from the deposition chamber to a load lock chamber. For example, the robot apparatus can extend at least one arm into the deposition chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the load lock chamber, and extend the at least one arm into the load lock chamber to place the rectangular substrate within the load lock chamber.

[0023] In some embodiments, the rectangular substrate is rotated about 180 degrees within the transfer chamber. In these embodiments, the robot apparatus can, after the first pass is performed in the deposition chamber, remove the rectangular substrate from the deposition chamber, and rotate the rectangular substrate about 180 degrees within the transfer chamber. For example, the robot apparatus can extend at least one arm into the deposition chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate, and rotate the rectangular substrate about 180 degrees within the transfer chamber. Then, after the rotation of the rectangular substrate within the transfer chamber, the robot apparatus can transfer the rectangular substrate from the rotation chamberto a second deposition chamber (e.g., the same deposition chamber or a deposition chamber different from the previous deposition chamber) to perform the second pass. For example, the robot apparatus can rotate the at least one arm to align with the second deposition chamber, and extend the at least one arm into the second deposition chamber to place the rectangular substrate within the second deposition chamber. After the second pass is performed, the robot apparatus can transfer the rectangular substrate from the second deposition chamber to a load lock chamber. For example, the robot apparatus can extend at least one arm into the second deposition chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the load lock chamber, and extend the at least one arm into the load lock chamber to place the rectangular substrate within the load lock chamber.

[0024] Aspects and implementations of the present disclosure result in technological advantages over other approaches. For example, the use of crossflow processes with substrate rotation can enable improved gas flow distribution and uniformity.

[0025] FIG. 1 is cross-sectional view of an example deposition chamber 100, in accordance with some embodiments. As will be described in further detail, the deposition chamber 100 can have a crossflow design that provides for unidirectional crossflow of process gases. In some embodiments, and as shown, the deposition chamber 100 is an ALD chamber. However, the deposition chamber 100 can include any suitable process chamber in accordance with the embodiments described herein.

[0026] As shown, the deposition chamber 100 includes a susceptor 110, a cathode 120, and a reactor area 130 between the susceptor 110 and the cathode 120. The susceptor 110 is configured to receive a rectangular substrate 115, raise the rectangular substrate 115 into the reactor area 130 to perform a deposition process, and maintain the rectangular substrate 115 within the reactor area 130 during processing. The susceptor 110 can be made of a suitable material that can heat and/or cool the rectangular substrate 115 to a desired processing temperature. Examples of suitable materials for the susceptor 110 include aluminum (Al), stainless steel, and ceramic. In some embodiments, the susceptor 110 includes a ceramic material. For example, the susceptor 110 can include a silicon carbide (SiC) material. The susceptor 110 can be provided with a protective coating to protect the susceptor 110 during processing. In some embodiments, the protective coating is a plasma-resistant coating. For example, the protective coating can include Y₂O₃ or other similar material. Other examples of plasma-resistant coatings that may be used include Er₂O₃, Y₃A1₅0I₂ (YAG), Er₃Al₅0i₂ (EAG), a composition comprising Y₂O₃ and ZrO₂ (e.g., a Y₂O₃-ZrO₂ solid solution), a composition comprising Y₂O₃, A1₂O₃ and ZrO₂ (e.g., a composition comprising Y₄A1₂O9 and a solid-solution of Y₂O₃-ZrO₂), Y-O-F (e.g., Y₅O₄F₇), YF₃, and so on. The coatings may have been deposited by line-of sight or non-line-of-sight deposition processes, such as ALD, CVD, physical vapor deposition (PVD), ion-assisted deposition (LAD), and so on. [0027] The cathode 120 can include any suitable conductive material in accordance with the embodiments described herein. For example, the cathode 120 can include aluminum (Al). The cathode 120 can be provided with a protective coating to protect the cathode 120 during processing. In some embodiments, the protective coating is a plasma-resistant coating. For example, the protective coating can include Y₂O₃ or other similar material. Any of the other plasma-resistant coatings discussed herein may also be used to coat the cathode 120.

[0028] As shown, the deposition chamber 100 further includes a first section 140 and a second section 150. Although the first section 140 is shown on the left side of the deposition chamber 100 and the second section 150 is shown in the right side of the deposition chamber 100, such an arrangement should not be considered limiting.

[0029] The first section 140 is designed to support and flow a process gas flow into the reactor of the deposition chamber 100 for the deposition process. For example, the process gas flow can include gases that are introduced into the reactor to perform the particular process. The process gas flow can be combined with a plasma (e.g., a plasma-enhanced deposition process). For example, the process gas can be used to form a plasma in the reactor, or a remote plasma may be formed and delivered into the reactor with the process gas. The second section 150 is designed to remove or evacuate remnants of the process from the reactor, which can include residual gases (e.g., unreacted gases) and/or byproducts. A flow guide of the first section 140 (not shown) can provide a path for the process gas flow to be introduced into the reactor area 130, and a flow guide of the second section 150 (not shown) can provide a path for the remnants to flow out of the reactor area 130. Further details regarding the first section 150 will be described below with reference to FIGS. 2A- 2B

[0030] FIGS. 2A and 2B are cross-sectional views of an example section 200 of a deposition chamber, in accordance with some embodiments. The deposition chamber has a crossflow design that provides for unidirectional crossflow of process gases. In some embodiments, the deposition chamber is an ALD chamber. The section 200 can be the first section 140 described above with reference to FIG. 1. Although a first section is being described, a second section of a deposition chamber system (e.g., the second section 150 described above with reference to FIG. 1) can have a similar arrangement of components. [0031] As shown, the section 200 includes a portion of the susceptor 110, a portion of the cathode 120, and a portion of the reactor area 130 of FIG. 1. The section 200 further includes a flow guide 210, a first insulator 220, a second insulator 230, a reactor interface (e.g., reactor lid) 240, a reactor frame 250, and a seal 260. A second section (e.g., second section 150 of FIG. 1) can also include a similar flow guide, first insulator, second insulator, reactor interface, the reactor frame 250, and a seal 260.

[0032] The flow guide 210 and the reactor interface 240 collectively provide a path 215 forthe remnants of the deposition process (e.g., residual process gases and byproducts) to escape out of the reactor area 130. The seal 260 forms a process gas containment seal that prevents the remnants from leaking or escaping, which can protect other components of the deposition chamber system from potential damage.

[0033] The first insulator 220 and the second insulator 230 are disposed in contact with the cathode 120 and the reactor interface 240 to prevent arcing from the cathode 120. The first insulator 220 and the second insulator 230 can include different materials that have different properties. For example, the second insulator 230 can include a material that is less susceptible to melting by virtue of its location. In some embodiments, the first insulator 220 includes a nonstick material. For example, the nonstick material can be, e.g., polytetrafluoroethylene (PTFE) or other suitable nonstick material. In some embodiments, the second insulator 240 includes a ceramic material.

[0034] The reactor frame 250 is designed to secure the rectangular substrate 115 disposed on the susceptor 110 upon loading of the rectangular substrate 115 within the reactor area 130. The reactor frame 250 canbe any suitable reactor frame in accordance with the embodiments described herein. In some embodiments, the reactor frame 250 is a mask frame or shadow frame. The rectangular substrate 115 may have a square or rectangular shape, or may have other shapes such as a disc shape or other polygonal shape. The rectangular substrate 115 may be composed of, for example, a semiconductor body (e.g., a semiconductor wafer), a glass or ceramic body (e.g., a glass or ceramic coupon), a metal body, or some other type of material. The section 200 can further include openings 270 and 280.

[0035] In some embodiments, the seal 260 can be formed from an elastic object. In this illustrative example, the seal 260 is a seal having a first end corresponding to a base 262 of the seal 260, and a second end corresponding to a compressive body 264 of the seal 260. The seal 260 is designed to form the process gas containment seal upon compression of the seal 260 between the reactor interface 240 and the reactor frame 250. As shown, the base 262 is mated with (e.g., inserted into) the reactor interface 240, such that the compressive body 264 is configured to contact the reactor frame 250 to form the process gas containment seal. [0036] The compressive body 264 can be comprised of a compressive material having material properties (e.g., bulk modulus, Young’s modulus, compressive strength, Poisson’s ratio, hardness) suitable for forming a process gas containment seal without damaging the reactor frame and/or the reactor interface. More specifically, the compressive body 264 can be comprised of a compressive material having material properties that provide for a suitably low compression force that is below a force threshold and that will not cause damage to components of the deposition chamber system (e.g., the susceptor 110 and/or the reactor frame 250). Moreover, to prevent breakage of the compressive body 264, the compression distance of the compressive body 264 should be within a suitable range upon contact with the reactor frame 250 during formation of the process gas containment seal. In some embodiments, the compression distance is less than about 4 millimeters (mm). For example, the compression distance can be between about 2 mm and about 3 mm. The compressive body may have a material and/or geometry that enable the compressive body to form a seal while maintaining a force that is less than the force threshold for a range of distances (e.g., over a range of +/-2 mm) between the reactor frame and the reactor interface. Thus, the compressive body may maintain a force of between A and B within the range of distances between the reactor frame and the reactor interface.

[0037] Since environmental conditions (e.g., high temperature and/or high pressure) can affect material properties, the compressive material can be selected to maintain its properties and integrity in various environments. For example, the seal 260 can illustratively be formed from an elastic polymer (elastomer) or other material with elastic or rubber-like properties. More specifically, the seal 260 can include a saturated elastomer due to greater stability against potentially extreme environmental conditions. In some embodiments, friction between the compressive body 264 and the reactor frame 250 and/or the reactor lid 240 can result in an approximately horizontal force that can further secure the compressive body 264 against the reactor frame 250 and/or the reactor lid 240, thereby improvingthe process containment seal. Examples of saturated elastomers include, but are not limited to, silicones (SI, Q, VMQ), fluorosilicones (FVMQ), fluoroelastomers (e.g., FKM and tetrafluoroethylene propylene (TFE/P)), and perfluoroelastomers (FFKM). In one embodiment, the compressive material comprises a perfluoropolymer (PFP) and/or a polyimide, which may retain its material properties at high temperature, and which may have resistance to erosion or corrosion caused by exposure to a plasma environment. In some embodiments, the base 262 and the compressive body 264 are formed from a same material, such that the seal 260 is a monolithic structure. However, the base 262 and the compressive body 264 can each be formed from different materials. [0038] Regarding geometry, as shown, the base 262 may have a trapezoidal cross- sectional shape that secures the seal 260 to the reactor interface 240, and the compressive body 264 can include an annular cross-sectional shape (e.g., having a cross-section of a hollow circle). For example, the compressive body 264 can be an elastic O-ring (“O-ring”). As another example, the compressive body 264 can include an elastic washer (“washer”). However, the seal 260 can include any suitable geometry that can form a process gas containment seal.

[0039] FIG. 3 is top-down view of an example electronic device manufacturing system 300 that performs crossflow deposition processes with substrate rotation, in accordance with some embodiments. The system 300 includes a number of deposition chambers 310-1 through 310-4. For example, each deposition chamber 310-l through 310-4 canbe similar to the deposition chamber shown in FIGS. 1-2. Although four deposition chambers are shown in this illustrative example, the system 300 can include any suitable number of deposition chambers. In some embodiments, the deposition chambers 310-1 through 310-4 include ALD chambers. As further shown, the system 300 includes a rotation chamber 315 configured to rotate a rectangular substrate about a vertical axis 317. In some embodiments, and as shown, the rotation is clockwise. In other embodiments, the rotation is counterclockwise. Although one rotation chamber is shown in this illustrative example, the system 300 can include any suitable number of rotation chambers. As further shown, the system 300 includes a load lock chamber 320. Although one load lock chamber is shown in this illustrative example, the system 300 can include any suitable number of load lock chambers.

[0040] The chambers 310-1 through 310-4, 315, and 320 each have ends corresponding to chamber openings that interface with a transfer chamber 330. Therefore, in this illustrative example, the transfer chamber 330 has a hexagonal shape. The transfer chamber 330 houses a transfer chamber robot apparatus 332, also referred to as a transfer robot. The robot apparatus 332 can include one or more arms configured to transfer rectangular substrates between the deposition chambers 310-1 through 310-4 and load lock chamber 320. In some embodiments, the robot apparatus 332 is a SC ARA (Selective Compliance Articulated Robot Arm) robot. An outer diameter 334 is shown to illustrate the maximum rotational clearance of the robot apparatus 332 while holding a rectangular substrate.

[0041] In some embodiments, as further shown, the system 300 can further include a factory chamber 340 housing a robot apparatus 342, also referred to as a factory interface robot. A second end of the load lock chamber 320 interfaces with the factory chamber 340 to enable the robot apparatus 342 to access the rectangular substrate from the load lock chamber 320 after processing. This can allow for safe removal of the rectangular substrate from the system 300.

[0042] The deposition chambers 310-1 through 310-4 can each have a unidirectional crossflow design to provide a process gas flow across a rectangular substrate that proceeds in a direction from a first section of the deposition chamber located at a first end of the deposition chamber to a second section of the deposition chamber located at a second end of the deposition chamber opposite the first end of the deposition chamber. For example, as shown, the direction can be from right to left relative to the first and second sections of the deposition chamber. As another example, the direction can be from left to right relative to the first and second sections of the deposition chamber. The first and second sections of the deposition chambers 310-1 through 310-4 are similar to the first and second sections 140 and 150, respectively, described above with reference to FIGS. 1-2.

[0043] The system 300 can perform a crossflow deposition process with substrate rotation for enhanced deposition uniformity. For example, assume that a rectangular substrate is to be processed within the system 300. The robot apparatus 332 can place the rectangular substrate into one of the deposition chambers 310-1 through 310-4, also referred to as the first deposition chamber. The rectangular substrate can then be processed in the first deposition chamber utilizing the processgas flow (e.g., from rightto left as shown). The processing performed in the first deposition chamber can be performed for a first pass having a first number of deposition cycles. In some embodiments, the first number of deposition cycles is equal to half of a total number of deposition cycles for processing the rectangular substrate.

[0044] After the first pass is complete, the robot apparatus 332 can transfer the rectangular substrate to the rotation chamber 315. For example, the robot apparatus 332 can extend at least one arm into the first deposition chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate from the first deposition chamber while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the rotation chamber, and extend the at least one arm into the rotation chamber to place the rectangular substrate within the rotation chamber.

[0045] The rotation chamber 315 can reverse the orientation of the ends of the rectangular substrate by rotatingthe rectangular substrate about 180 degrees aboutthe vertical axis 317. After the rotation, the robot apparatus 332 can transfer the rectangular substrate into one of the deposition chambers 310-1 through 310-4, referred to as the second deposition chamber. In some embodiments, the second deposition chamber is the first deposition chamber. In some embodiments, the second deposition chamber is a different deposition chamber from the first deposition chamber. For example, the robot apparatus 332 can extend at least one arm into the rotation chamber to obtain the rectangular substrate, retract the at least one arm to remove the rectangular substrate from the rotation chamber while maintaining the orientation of the rectangular substrate, rotate the at least one arm to align with the second deposition chamber, and extend the at least one arm into the second deposition chamber to place the rectangular substrate within the second deposition chamber. [0046] The rectangular substrate can then be processed in the second deposition chamber utilizing the process gas flow (e.g., from right to left as shown). The processing performed in the second deposition chamber can be performed for a second pass having a second number of deposition cycles to complete the processing of the rectangular substrate. In some embodiments, the first number of deposition cycles is equal to half of the total number of deposition cycles for processing the rectangular substrate.

[0047] After the second pass is complete, the robot apparatus 332 can remove the rectangular substrate from the second deposition chamber. For example, the robot apparatus 332 can extend the at least one arm into the second deposition chamber to obtain the rectangular substrate, and retract the at least one arm to remove the rectangular substrate while maintaining the orientation of the rectangular substrate. The robot apparatus 332 can then place the rectangular substrate into another chamber. For example, the robot apparatus 332 can place the rectangular substrate into the load lock chamber 320 by rotating the at least one arm to align with the load lock chamber 320. The rectangular substrate can then be retrieved from the load lock chamber 320 by the robot apparatus 342 for removal from the system 300. Alternatively, the robot apparatus 332 can place the rectangular substrate in another process chamber for additional processing.

[0048] FIG. 4A is top-down view of an example electronic device manufacturing system (“system”) 400A that performs crossflow deposition processes with substrate rotation, in accordance with some embodiments. System 400 A includes deposition chambers 410A-1 through 410A-5, load lock chamber 320, transfer chamber 330 including robot apparatus 332, and factory chamber 340 including robot apparatus 342. Each of the deposition chambers 410A-1 through 410A-5 can have a unidirectional crossflow design to provide a process gas flow across a rectangular substrate that proceeds in a direction from a first section of the deposition chamber located at a first end of the deposition chamber to a second section of the deposition chamber located at a second end of the deposition chamber opposite the first end of the deposition chamber. In this example, each of the deposition chambers 410A-1 through 41 OA-5 is further configured to rotate the rectangular substrate about a vertical axis. For example, deposition chamber 41 OA-5 is configured to rotate the rectangular substrate about the vertical axis 415.

[0049] The system 400 A can perform a crossflow deposition process with substrate rotation for enhanced deposition uniformity. For example, assume that a rectangular substrate is to be processed within the system 400A. The robot apparatus 332 can place a rectangular substrate in one of the deposition chambers (e.g., deposition chamber 410 A- 5) for the first pass. After the rectangular substrate is processed in the deposition chamber for the first pass, the deposition chamber can reverse the orientation of the ends of the rectangular substrate by rotating the rectangular substrate about 180 degrees about the vertical axis. The deposition chamber can then process the rectangular substrate for the second pass. After processing the rectangular substrate for the second pass, the robot apparatus 332 can remove the rectangular substrate from the deposition chamber. The robot apparatus 332 can then place the rectangular substrate in another chamber. For example, the robot apparatus 332 can place the rectangular substrate into the load lock chamber 320 by rotating the at least one arm to align with the load lock chamber 320. The rectangular substrate canthen be retrieved from the load lock chamber 320 by the robot apparatus 342 for removal from the system 300. Alternatively, the robot apparatus 332 can place the rectangular substrate in another process chamber for additional processing.

[0050] FIG. 4B is top-down view of an example electronic device manufacturing system (“system”) 400B that performs crossflow deposition processes with substrate rotation, in accordance with some embodiments. System 400B includes deposition chambers 410B-1 through 410B-5, load lock chamber 320, transfer chamber 420 including robot apparatus 422, and factory chamber 340 including robot apparatus 342. Deposition chambers 410B- 1 through 410B-5 can be similar to deposition chambers 310-1 through 310-4 described above with reference to FIG. 3. However, in this example, the robot apparatus 422 is configured to rotate the rectangular substrate within the transfer chamber 330 about 180 degrees about a vertical axis 425.

[0051] The system 400B can perform a crossflow deposition process with substrate rotation for enhanced deposition uniformity. For example, assume that a rectangular substrate is to be processed within the system 300. The robot apparatus 422 can place a rectangular substrate in one of the deposition chambers (e.g., deposition chamber 410B-5) for the first pass, also referred to a first deposition chamber. After the rectangular substrate is processed in the first deposition chamber for the first pass, the robot apparatus 422 can remove the rectangular substrate from the first deposition chamber, rotate the rectangular substrate within the transfer chamber 420 about 180 degrees about the vertical axis 425, and place the rectangular substrate into one of the deposition chambers 41 OB- 1 through 41 OB-5 (e.g., the same deposition chamber as the first deposition chamber or a different deposition chamber from the first deposition chamber). The second deposition chamber canthen process the rectangular substrate for the secondpass. After processing the rectangular substrate for the second pass, the robot apparatus 422 can remove the rectangular substrate from the deposition chamber. The robot apparatus 422 canthen place the rectangular substrate in another chamber. For example, the robot apparatus 422 can place the rectangular substrate into the load lock chamber 320 by rotating the at least one arm to align with the load lock chamber 320. The rectangular substrate can thenbe retrievedfrom the load lock chamber 320 by the robot apparatus 342 for removal from the system 300. Alternatively, the robot apparatus 332 can place the rectangular substrate in another process chamber for additional processing.

[0052] FIGS. 5A-5C are cross-sectional diagrams illustrating an example process flow for implementing an electronic device manufacturing system (“system”) 500 to perform crossflow deposition processes with substrate rotation, in accordance with some embodiments. For example, the system 500 can be similar to the system 300 described above with reference to FIG. 3.

[0053] As shown, the system 500 includes a rotation chamber section 510 and a transfer chamber section 520. The rotation chamber section 510 includes a rotation chamber 512 having a rotation chamber robot apparatus 514, also referred to as a rotation robot. The rotation robot 514 can include an end effector 515 For example, the rotation robot 514 can be a vacuum robot apparatus. In some embodiments, the rotation robot 514 is a two-degree of freedom (2DOF) robot apparatus. However, such examples should not be considered limiting. The rotation chamber section 510 further includes a substrate transfer component 516 including a number of substrate transfer opening (“openings”) 518.

[0054] The transfer chamber section 520 includes a transfer chamber robot apparatus 522, also referred to as a transfer robot. For example, the transfer robot 522 can be similar to the transfer robot 332 described above with reference to FIG. 3. The transfer robot 522 includes at least one end effector 524 for transferring substrates between various chambers of the system 500 (e.g., deposition chamber(s), the rotation chamber(s) 512, load lock chamber(s)). [0055] FIG. 5 A shows a substrate loading phase and a substrate exchange phase. During the substrate loading phase, the transfer robot 522 places a rectangular substrate (e.g., glass substrate) within the rotation chamber 512 via an opening 518. The transfer robot 522 can place the substrate 530 within the rotation chamber 512 after the substrate 530 has been processed within a deposition chamber (e.g., after a first pass of the deposition process). During the substrate exchange phase, the rotation robot 514 can pick up the substrate 530. Further details regarding the substrate loading phase are described above with reference to FIG. 3 and will be described in further detail below with reference to FIGS. 6A and 7.

Further details regarding the substrate exchange phase are described above with reference to FIG. 3 and will be described in further detail below with reference to FIGS. 6B and 7.

[0056] FIG. 5B shows a substrate rotation phase. After the transfer robot 522 exits the rotation chamber 512, the rotation robot 514 rotates the substrate 530 by about 180 degrees about the vertical axis 526. In this illustrative example, the 180 degree rotation is performed in a counterclockwise direction aboutthe vertical axis 526. However, the 180 degree rotation can alternatively be performed in a clockwise aboutthe vertical axis 526. Further details regarding the substrate rotation phase are described above with reference to FIG. 3 and will be described in further detail below with reference to FIGS. 6C and 7.

[0057] FIG. 5C shows the removal of the sub strate 530 after the rotation of the sub strate 530. For example, the end effector 524 can enter one of the openings 518, which canbe different from the opening into which the substrate 530 was placed into the rotation chamber 512 (e.g., an opening at a different height from the opening 518. In this illustrative example, the end effector 524 enters an opening below the opening into which the substrate 530 was placed into the rotation chamber.

[0058] FIGS. 6A-6C are diagrams illustrating example phases for rotating substrates within an electronic device manufacturing system (“system”) 600, in accordance with some embodiments. For example, the system 600 can be similar to the systems 300/500 described above with reference to FIGS. 3 and 5. As shown, the system 600 includes a rotation chamber 610 having a rotation robot 612 and a transfer chamber 620 having a transfer robot 622.

[0059] FIG. 6 A shows a substrate loading phase in which the transfer robot 622 enters the rotation chamber 610 with a rectangular substrate 624. FIG. 6B shows a substrate exchange phase in which the rotation robot 612 picks up the at least one substrate from the transfer robot 622. FIG. 6C shows a substrate rotation phase in which the transfer robot 622 exits the rotation chamber 610 and the rotation robot 612 initiates substrate rotation to rotate the substrate about 180 degrees. Further details regarding FIGS. 6A-6C are described above with reference to FIGS. 3 and 5A-5C and will be described in further detail below with reference to FIG. 7.

[0060] FIG. 7 depicts a flow chart of an example method 700 for implementing an electronic device manufacturing system to perform crossflow deposition processes with substrate rotation for enhanced deposition uniformity, in accordance with some embodiments.

[0061] At block 702, a rectangular substrate is placed in in a deposition chamber of an electronic device manufacturing system. The electronic device manufacturing system can include a number of deposition chambers. In some embodiments, the deposition chambers include ALD chambers.

[0062] More specifically, the rectangular substrate can be placed in the deposition chamber by a robot apparatus housed in a transfer chamber that interfaces with the deposition chamber (e.g., a transfer robot). The deposition chamber can have a unidirectional crossflow design to provide a process gas flow across the rectangular substrate that proceeds in a direction from a first section of the deposition chamber located at a first end of the deposition chamber to a second section of the deposition chamber located at a second end of the deposition chamber opposite the first end of the deposition chamber. For example, the direction can be from right to left relative to the first and second sections of the deposition chamber. As another example, the direction can be from left to right relative to the first and second sections of the deposition chamber.

[0063] At block 704, the rectangular substrate is processed in the deposition chamber for a first pass having a first number of deposition cycles. In some embodiments, the first number of deposition cycles is equal to half of a total number of deposition cycles for processing the rectangular substrate.

[0064] After the rectangular substrate is processed in the first deposition chamber for the first pass, at block 706, the rectangular substrate is rotated about 180 degrees relative to a vertical axis. The rotation of the rectangular substrate reverses the orientation of the ends of the rectangular substrate.

[0065] In some embodiments, the rectangular substrate is rotated within a rotation chamber. Here, rotating the rectangular substrate can include the robot apparatus transferring the rectangular substrate from the deposition chamber to the rotation chamber. For example, transferring the rectangular substrate from the deposition chamber can include the robot apparatus extending at least one arm into the deposition chamber to obtain the rectangular substrate, retracting the at least one arm to remove the rectangular substrate from the deposition chamber while maintaining the orientation of the rectangular substrate, rotating the at least one arm to align with the rotation chamber, and extending the at least one arm into the rotation chamber to place the rectangular substrate within the rotation chamber. Once inside the rotation chamber, the rotation chamber can rotate the rectangular substrate about 180 degrees about a vertical axis defined with respect to the rotation chamber.

[0066] In some embodiments, the rectangular substrate is rotated within the deposition chamber. That is, the rectangular substrate remains in the deposition chamber after the first pass is complete, and is rotated about 180 degrees about a vertical axis defined with respect to the deposition chamber.

[0067] In some embodiments, the rectangular substrate is rotated within the transfer chamber. Here, rotating the rectangular substrate can include the robot apparatus extending the at least one arm into the deposition chamber to obtain the rectangular substrate, retracting the at least one arm to remove the rectangular substrate from the deposition chamber while maintaining the orientation of the rectangular substrate, and rotating the rectangular substrate about 180 degrees about a vertical axis defined with respect to the transfer chamber. By eliminating the need to transfer the rectangular substrate to a dedicated rotation chamber, rotating the rectangular substrate within the deposition chamber can reduce the amount of time required to process the rectangular substrate relative to rotation within the rotation chamber.

[0068] There may be various benefits to utilizing a rotation chamber to perform the rotation. For example, by utilizing the rotation chamber, there is no need to reconfigure or retrofit the structure of the deposition chambers to enable the rotation of the rectangular substrate. Additionally or alternatively, there is no need to modify the size or shape of the transfer chamber to support rotation ofthe rectangular substrate within the transfer chamber. [0069] There may be various benefits to rotating the rectangular substrate within a deposition chamber. For example, by eliminating the need to transfer the rectangular substrate to a dedicated rotation chamber and/or removing the rectangular substrate for rotation within the transfer chamber, rotating the rectangular substrate within the deposition chamber can reduce the amount of time required to process the rectangular substrate.

[0070] There may be various benefits to rotating the rectangular substrate within a transfer chamber. For example, rotating the rectangular substrate within the transfer chamber can reduce the amount of time required to process the rectangular substrate, at least relative to rotation within the rotation chamber. Additionally, there is no need to reconfigure or retrofitthe structure of the deposition chambers to enable the rotation of the rectangular substrate.

[0071] At block 708, the rectangular substrate is processed for a second pass having a second number of deposition cycles. In some embodiments, the second number of deposition cycles is equal to half of the total number of deposition cycles for processing the rectangular substrate (e.g., the second number of deposition cycles is equal to the first number of deposition cycles). In some embodiments, the rectangular substrate is processed for the second pass in the same deposition chamber as during the first pass. In some embodiments, the rectangular substrate is processed for the second pass in a different deposition chamber from the deposition chamber used to process the rectangular substrate for the first pass. For example, if the rectangular substrate was rotatedin the rotation chamber or the transfer chamber, then the robot apparatus can place the rectangular substrate within the deposition chamber to process the rectangular substrate for the second pass. As another example, if the rectangular substrate was rotated in the deposition chamber that processed the rectangular substrate for the first pass, the same deposition chamber can be used to process the rectangular substrate for the second pass.

[0072] After the rectangular substrate is processed for the second pass, the current deposition process is completed. Thus, at block 710, the rectangular substrate can be removed. More specifically, the robot apparatus can remove the rectangular substrate from the second deposition chamber.

[0073] At block 712, the robot apparatus can place the rectangular substrate in another chamber. In some embodiments, the robot apparatus places the rectangular substrate in a load lock chamber. The load lock chamber can interface with a factory chamber to enable safe removal of the rectangular substrate from the electronic device manufacturing system (e.g., using a second robot apparatus housed within the factory chamber). In some embodiments, the robot apparatus places the rectangular substrate in another process chamber for further processing (e.g., deposition chamber, etch chamber). The method 700 canbe repeated to process the same substrate or a different substrate. Further details regarding blocks 702-710 are described above with reference to FIGs. 1-6C.

[0074] The preceding description sets forth numerous specific details such as examples of specific systems, components, methods, and so forth, in order to provide a good understanding of several embodiments of the present invention. It will be apparent to one skilled in the art, however, that at least some embodiments of the present invention may be practiced without these specific details. In other instances, well-known components or methods are not described in detail or are presented in simple block diagram format in order to avoid unnecessarily obscuringthe present invention. Thus, the specific details set forth are merely exemplary. Particular implementations may vary from these exemplary details and still be contemplated to be within the scope of the present invention.

[0075] Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment. Thus, the appearances of the phrase “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. In addition, the term “or” is intended to mean an inclusive “or” rather than an exclusive “or.” When the term “about” or “approximately” is used herein, this is intended to mean that the nominal value presented is precise within ±10%.

[0076] Although the operations of the methods herein are shown and described in a particular order, the order of the operations of each method may be altered so that certain operations may be performed in an inverse order or so that certain operation may be performed, at least in part, concurrently with other operations. In another embodiment, instructions or sub -op erations of distinct operations may be in an intermittent and/or alternating manner.

[0077] It is to be understood that the above description is intended to be illustrative, and not restrictive. Many other implementation examples will be apparent to those of skill in the art upon reading and understanding the above description. Although the present disclosure describes specific examples, it will be recognized that the systems and methods of the present disclosure are not limited to the examples described herein, but may be practiced with modifications within the scope of the appended claims. Accordingly, the specification and drawings are to be regarded in an illustrative sense rather than a restrictive sense. The scope of the present disclosure should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

CLAIMS What is claimed is:

1 . A system comprising: a plurality of deposition chambers comprising a first deposition chamber; a rotation chamber; a transfer chamber interfacing with the plurality of deposition chambers and the rotation chamber; and a robot apparatus housed within the transfer chamber, wherein the robot apparatus is configured to: place a rectangular substrate in the first deposition chamber to process the rectangular substrate for a first pass having a first number of deposition cycles; and after processing the rectangular substrate for the first pass in the first deposition chamber, transfer the rectangular substrate from the first deposition chamber to the rotation chamber to rotate the rectangular substrate about 180 degrees; wherein the first deposition chamber comprises: a reactor interface; a flow guide attached to the reactor interface, wherein the flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process; a reactor frame disposed underneath the reactor interface to secure a substrate; and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force.

2. The system of claim 1 , wherein each deposition chamber of the plurality of deposition chambers has a unidirectional crossflow design to provide a process gas flow across the rectangular substrate that proceeds in a direction from a first section of the deposition chamber located at a first end of the deposition chamber to a second section of the deposition chamber located at a second end of the deposition chamber opposite the first end of the deposition chamber.

3. The system of claim 2, wherein the robot apparatus is further configured to, after rotating the rectangular substrate about 180 degrees in the rotation chamber, transfer the rectangular substrate from the rotation chamber to a second deposition chamber of the plurality of deposition chambers to process the rectangular substrate for a second pass having a second number of deposition cycles, wherein the second deposition chamber has the unidirectional crossflow design, and wherein the first number of deposition cycles and the second number of deposition cycles are each equal to half of a total number of deposition cycles for processing the rectangular substrate.

4. The system of claim 3, wherein the first deposition chamber is the second deposition chamber.

5. The system of claim 4, wherein, after processing the rectangular substrate for the second pass in the second deposition chamber, the robot apparatus is further configured to remove the rectangular substrate from the second deposition chamber.

6. The system of claim 5, further comprising a load lock chamber, wherein the robot apparatus is further configured to place the rectangular substrate in the load lock chamber after removing the rectangular substrate from the second deposition chamber.

7. A system comprising: a plurality of deposition chambers comprising a first deposition chamber having a unidirectional crossflow design to provide a process gas flow across a rectangular substrate that proceeds in a direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber; a transfer chamber interfacing with the plurality of deposition chambers; and a robot apparatus housed within the transfer chamber, wherein the robot apparatus is configured to place the rectangular substrate in the first deposition chamber to process the rectangular substrate for a first pass having a first number of deposition cycles; wherein, after processing the rectangular sub strate for the first pass in the first deposition chamber, the rectangular substrate is rotated about 180 degrees within the system; and wherein the first deposition chamber comprises: a reactor interface; a flow guide attached to the reactor interface, wherein the flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process; a reactor frame disposed underneath the reactor interface to secure a substrate; and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force.

8. The system of claim 7, wherein each deposition chamber of the plurality of deposition chambers has a unidirectional crossflow design to provide a process gas flow across the rectangular substrate that proceeds in a direction from a first section of the deposition chamber located at a first end of the deposition chamber to a second section of the deposition chamber located at a second end of the deposition chamber opposite the first end of the deposition chamber.

9. The system of claim 7, wherein the first deposition chamber is configured to: after processing the rectangular substrate for the first pass in the first deposition chamber, rotate the rectangular substrate about 180 degrees; and after rotatingthe rectangular substrate about 180 degrees, process the rectangular substrate for a second pass having a second number of deposition cycles, wherein the first number of deposition cycles and the second number of deposition cycles are each equal to half of a total number of deposition cycles for processing the rectangular substrate.

10. The system of claim 7, wherein the robot apparatus is further configured to, after processing the rectangular substrate for the second pass in the first deposition chamber, remove the rectangular substrate from the first deposition chamber.

11. The system of claim 10, further comprising a load lock chamber, wherein the robot apparatus is further configured to, after removing the rectangular substrate from the first deposition chamber; place the rectangular substrate in the load lock chamber.

12. The system of claim 7, wherein the robot apparatus is further configured to: after processing the rectangular substrate for the first pass in the first deposition chamber, rotate the rectangular substrate about 180 degrees in the transfer chamber; and after rotatingthe rectangular substrate about 180 degrees in the transfer chamber, place the rectangular substrate in a second deposition chamber of the plurality of deposition chambers to process the rectangular substrate for a second pass having a second number of deposition cycles, wherein the second deposition chamber has the unidirectional crossflow design, and wherein the first number of deposition cycles and the second number of deposition cycles are each equal to half of a total number of deposition cycles for processing the rectangular substrate.

13. The system of claim 12, wherein the first deposition chamber is the second deposition chamber.

14. The system of claim 13, further comprising a load lock chamber, wherein the robot apparatus is further configured to: after processing the rectangular substrate for the second pass in the second deposition chamber, remove the rectangular substrate from the second deposition chamber; and place the rectangular substrate in the load lock chamber after removing the rectangular substrate from the second deposition chamber.

15. A method comprising: placing a rectangular substrate in a first deposition chamber of an electronic device manufacturing system; processing the rectangular sub strate in the first deposition chamber for a first pass having a first number of deposition cycles; and after processing the rectangular substrate in the first deposition chamber for the first pass, rotatingthe rectangular substrate about 180 degrees; wherein the first deposition chamber comprises: a reactor interface; a flow guide attached to the reactor interface, wherein the flow guide is one of an upstream flow guide to guide a process gas flow into a reactor for performing a deposition process with respect to a substrate loaded in the reactor, or a downstream flow guide to guide remnants out of the reactor after performing the deposition process; a reactor frame disposed underneath the reactor interface to secure a substrate; and an elastic object having a first end corresponding to a base attached to the reactor interface and a second end corresponding to a compressive body disposed above the reactor frame to form a process gas containment seal between the reactor interface and the reactor frame with a compressive force.

16. The method of claim 15, wherein rotatingthe rectangular substrate about 180 degrees comprises rotating the rectangular substrate about 180 degrees within the first deposition chamber, and wherein the method further comprises: after rotatingthe rectangular substrate about 180 degrees in the first deposition chamber, processing the rectangular substrate in the first deposition chamber for a second pass having a second number of deposition cycles, wherein the first number of deposition cycles and the second number of deposition cycles are each equal to half of a total number of deposition cycles for processing the rectangular substrate; and after processing the rectangular substrate for the second pass in the first deposition chamber, removing the rectangular substrate from the first deposition chamber.

17. The method of claim 15, wherein the first deposition chamber has a unidirectional crossflow design, and wherein processing the rectangular substrate in the first chamber comprises providing a process gas flow across the rectangular substrate that proceeds in a direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber.

18. The method of claim 17, wherein rotatingthe rectangular substrate about 180 degrees comprises transferring the rectangular substrate from the first deposition chamber to a rotation chamber, and wherein the method further comprises: after rotatingthe rectangular substrate about 180 degrees in the rotation chamber, transferring the rectangular substrate from the rotation chamber to a second deposition chamber of the electronic device manufacturing system, wherein the second deposition chamber has the unidirectional crossflow design; processing the rectangular substrate for a second pass having a second number of deposition cycles in the second deposition chamber, wherein the first number of deposition cycles and the second number of deposition cycles are each equal to half of a total number of deposition cycles for processing the rectangular substrate; and after processing the rectangular substrate for the second pass in the second deposition chamber, removing the rectangular substrate from the second deposition chamber.

19. The method of claim 17, wherein rotating the rectangular substrate about 180 degrees comprises removing the rectangular substrate from the first deposition chamber and rotating the rectangular substrate about 180 degrees within a transfer chamber, and wherein the method further comprises: after rotatingthe rectangular substrate about 180 degrees in the transfer chamber, transferring the rectangular substrate from the rotation chamber to a second deposition chamber of the electronic device manufacturing system, wherein the second deposition chamber has the unidirectional crossflow design; processing the rectangular substrate for a second pass having a second number of deposition cycles, wherein the first number of deposition cycles and the second number of deposition cycles are each equal to half of a total number of deposition cycles for processing the rectangular substrate; and after processing the rectangular substrate for the second pass in the second deposition chamber, removing the rectangular substrate from the second deposition chamber.

20. The method of claim 19, wherein the first deposition chamber is the second deposition chamber.