WO2023153045A1 - 処理液供給方法および基板処理装置 - Google Patents
処理液供給方法および基板処理装置 Download PDFInfo
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- WO2023153045A1 WO2023153045A1 PCT/JP2022/043002 JP2022043002W WO2023153045A1 WO 2023153045 A1 WO2023153045 A1 WO 2023153045A1 JP 2022043002 W JP2022043002 W JP 2022043002W WO 2023153045 A1 WO2023153045 A1 WO 2023153045A1
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- liquid
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- suck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
- B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
- B05C11/1026—Valves
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K23/00—Valves for preventing drip from nozzles
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Definitions
- the present invention relates to a processing liquid supply method and a substrate processing apparatus for processing substrates.
- substrates include semiconductor substrates, FPD (Flat Panel Display) substrates, photomask glass substrates, optical disk substrates, magnetic disk substrates, ceramic substrates, and solar cell substrates.
- FPDs include liquid crystal display devices and organic EL (electroluminescence) display devices.
- a conventional substrate processing apparatus includes a nozzle for discharging a processing liquid, a pipe connected to the nozzle, an on-off valve provided on the pipe, and a suckback valve provided on the pipe between the nozzle and the on-off valve. (See, for example, Patent Documents 1 and 2).
- a suckback valve is used to suck the processing liquid in the nozzle.
- FIGS. 10(a) to 10(c) Conventional substrate processing apparatuses have the following problems. Please refer to FIGS. 10(a) to 10(c).
- a columnar treatment liquid LQ is discharged from the nozzle 108 (see FIG. 10A).
- the on-off valve is closed, the discharge of the treatment liquid is stopped. Since the treatment liquid is viscous, the position where the treatment liquid runs out is below the nozzle 108 . This tendency becomes remarkable when the ejection of medium-high viscosity (for example, 45 to 500 cP) treatment liquid is stopped, and the so-called liquid depletion state worsens.
- medium-high viscosity for example, 45 to 500 cP
- liquid cutoff position refers to a position where the processing liquid LQ discharged from the nozzle 108 and extending in a columnar shape is divided into two when the on-off valve is closed (FIG. 10(b)). )reference).
- liquid level position refers to the downstream side of the processing liquid that exists in the flow path in the nozzle 108 after the liquid has run out, or the hemispherical processing liquid that protrudes from the discharge port at the tip of the nozzle 108. Refers to the terminal position.
- the lack of liquid is adjusted by the closing speed of the on-off valve.
- the processing liquid accumulates in a hemispherical shape at the tip of the nozzle 108 after the liquid runs out, various inconveniences are caused. ing. Specifically, after the on-off valve is closed, the suck-back valve is operated to expand the flow path inside the valve, thereby sucking and pulling back the processing liquid in the flow path connected to the nozzle, thereby adjusting the level of the processing liquid. It is set inside the nozzle 108 . This prevents the solvent of the processing liquid from evaporating.
- the conventional method adjusts the surface position of the processing liquid, but does not adjust the liquid depletion position of the processing liquid. Therefore, the problem caused by the position where the processing liquid runs out is located below the nozzle cannot be solved by the conventional technology for adjusting the processing liquid surface using the suck valve.
- Patent Document 1 describes a coating device in which a "filter” is provided in the pipe between the suckback valve and the nozzle. This applicator can adjust the closing operation of the on-off valve and the start of the sucking operation of the suck back valve. As a result, it is possible to easily perform liquid depletion adjustment (prevention of dripping of the processing liquid from the nozzle after the supply of the processing liquid from the nozzle is interrupted by the closing operation of the on-off valve). Further, in this patent document 1, "liquid depletion” is defined as actually stopping the supply of the treatment liquid. That is, Patent Literature 1 does not mention the adjustment of the "liquid depletion position" referred to in the specification of the present application.
- the present invention has been made in view of such circumstances, and an object of the present invention is to provide a processing liquid supply method and a substrate processing apparatus that can easily adjust the liquid depletion position.
- a processing liquid supply method includes a nozzle for discharging a processing liquid, a pipe connected to the nozzle, an on-off valve provided in the pipe, and a pipe between the nozzle and the on-off valve. and a suck-back valve provided in the substrate processing apparatus, the ejection stopping step of stopping the ejection of the processing liquid from the nozzle by causing the on-off valve to perform a closing operation.
- a liquid cutoff position which is a position at which the treatment liquid discharged in a columnar shape from the nozzle is divided, is adjusted. and a liquid outage position adjusting step.
- the suck-back valve is caused to perform a suction operation in conjunction with the closing operation of the on-off valve. This makes it possible to easily adjust the liquid outage position, thereby easily aligning the liquid outage position with the tip surface of the nozzle. In addition, since the position where the liquid is cut off can be easily adjusted, it is possible to prevent the occurrence of film thickness unevenness, coating unevenness, and the like due to the poor liquid cutoff state.
- the liquid cutoff position adjustment step adjusts the liquid cutoff position to the height of the tip surface of the nozzle.
- the liquid cutoff position is adjusted to the tip surface of the nozzle, it is possible, for example, to suppress variations in the discharge amount of the treatment liquid from the nozzles, thereby preventing film thickness unevenness caused by poor liquid cutoff conditions. can be done.
- the suck-back valve is caused to perform a second suction operation, whereby the downstream side of the processing liquid existing in the flow path in the nozzle is removed. It is preferable to further include a liquid level adjustment step of adjusting the liquid level position of the treatment liquid, which is the terminal position. That is, the processing liquid supply method causes a two-step suction operation to be performed. The suction operation is used to adjust the liquid-out position, and the second suction operation is used to adjust the liquid surface position of the processing liquid inside the nozzle.
- the speed of the suction operation in the liquid shortage position adjustment step is faster than the speed of the second suction operation in the liquid surface position adjustment step.
- the second suction operation in the liquid level position adjustment step is performed by a delay time from the end of the suction operation in the liquid depletion position adjustment step to a preset time. It is preferably started after Since there is a delay time between the suction operation and the second suction operation, it is possible to prevent unstable liquid depletion.
- the liquid depletion position adjusting step causes the suck back valve to start the suction operation within a preset period after the closing operation of the on-off valve is completed. , it is preferable to adjust the liquid cut-off position.
- the position where the liquid runs out can be easily adjusted.
- the liquid depletion position adjusting step causes the suck-back valve to start a suction operation while the on-off valve is performing the closing operation, and after the closing operation is finished, It is preferable to adjust the liquid outage position by ending the suction operation.
- the position where the liquid runs out can be easily adjusted.
- the substrate processing apparatus includes: a nozzle for discharging a processing liquid; a pipe connected to the nozzle; an on-off valve provided in the pipe; and a controller, wherein the controller stops ejection of the treatment liquid from the nozzle by causing the on-off valve to perform a closing operation, and the controller controls the By causing the suck-back valve to perform a suction operation in conjunction with the closing operation of the on-off valve, a liquid cutoff position, which is a position at which the processing liquid discharged in a columnar shape from the nozzle is divided, is adjusted. and
- the suck-back valve is caused to perform a suction operation in conjunction with the closing operation of the on-off valve in order to adjust the liquid depletion position.
- the control unit causes the suck-back valve to perform a second suction operation after adjusting the liquid outage position, thereby removing the processing liquid present in the flow path in the nozzle. It is preferable to adjust the liquid surface position of the processing liquid, which is the terminal position on the downstream side of the . That is, the controller performs a two-stage suction operation. The suction operation is used to adjust the liquid-out position, and the second suction operation is used to adjust the liquid surface position of the processing liquid inside the nozzle.
- the suck-back valve is a single suck-back valve, and the controller causes the single suck-back valve to perform the suction operation and the second suction operation.
- a single suckback valve can be used to easily adjust the dead position.
- the substrate processing apparatus described above further includes a second suckback valve provided in the pipe between the nozzle and the on-off valve, wherein the control unit causes the suckback valve to perform the suction operation, Moreover, it is preferable to cause the second suck-back valve to perform the second suction operation.
- Two suck-back valves can be used to easily adjust the out-of-liquid position.
- the liquid depletion position can be easily adjusted.
- FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to Example 1;
- FIG. FIG. 4 is a longitudinal sectional view showing an on-off valve and a suckback valve; 4 is a timing chart for explaining the operation of the substrate processing apparatus according to Example 1; It is an evaluation result showing the relationship between the closing operation time of the on-off valve and the suction delay time of the suck-back valve. It is an evaluation result showing the relationship between the suction delay time of the suck back valve and the suction time of the suck back valve.
- FIG. 8 is a timing chart for explaining the operation of the substrate processing apparatus according to Example 2; 13 is a timing chart for explaining the operation of the substrate processing apparatus according to Example 3; It is a timing chart for explaining operation of a substrate processing device concerning a modification.
- It is a schematic block diagram of the substrate processing apparatus which concerns on a modification.
- (a) is a diagram showing a state in which a columnar treatment liquid is being discharged from a nozzle
- (b) is a diagram for explaining a position where the liquid is cut off
- (c) is a diagram showing the nozzle immediately after the liquid is cut off.
- FIG. 10 is a diagram showing a hemispherical treatment liquid adhering to the tip of the .
- FIG. 1 is a schematic configuration diagram of a substrate processing apparatus according to a first embodiment.
- FIG. 2 is a longitudinal sectional view showing an on-off valve and a suck-back valve.
- FIG. 3 is a timing chart for explaining the operation of the substrate processing apparatus according to the first embodiment.
- a substrate processing apparatus 1 includes a holding and rotating unit 2 and a processing liquid supply unit 3 .
- the holding and rotating part 2 holds the substrate W in a horizontal posture and rotates the substrate W around a vertical axis AX1 passing through substantially the center of the substrate W.
- the holding and rotating part 2 includes a spin chuck 5 and a rotating mechanism 6 .
- the rotating mechanism 6 includes, for example, an electric motor. The rotating mechanism 6 rotates the spin chuck 5 holding the substrate W around the vertical axis AX1.
- the spin chuck 5 is configured to hold the lower surface of the substrate W by vacuum adsorption, for example.
- the spin chuck 5 may include a spin base and a plurality of pin members (both not shown).
- the plurality of pin members are erected on the upper surface of the spin base so as to be arranged in a ring around the vertical axis AX1.
- the treatment liquid supply unit 3 includes a nozzle 8 , a treatment liquid supply source 10 , a pipe 12 , a pump 14 , a filter 15 , an on-off valve 17 and a suckback valve 18 .
- the nozzle 8 ejects the treatment liquid.
- the nozzle 8 has an internal flow path 8A and a discharge port 8B. 8 A of internal flow paths are formed so that it may extend in an up-down direction.
- the discharge port 8B is provided at the tip surface of the nozzle 8, that is, at the lower end of the internal flow path 8A.
- the diameter of the ejection port 8B is, for example, 1.5 mm. However, the diameter of the ejection port 8B is not limited to 1.5 mm.
- the processing liquid supply source 10 stores the processing liquid.
- the processing liquid supply source 10 is, for example, a bottle.
- a photoresist liquid for example, a photoresist liquid, an SOG (Spin on glass coating) liquid, an SOD (Spin on dielectric coating) liquid, a polyimide resin liquid, or a liquid for forming an antireflection film is used.
- the end of the pipe 12 is connected to the base end of the nozzle 8. A proximal end of the pipe 12 is inserted into the processing liquid supply source 10 .
- the pump 14 sends the processing liquid to the nozzle 8 side.
- a pump 14 is provided in the pipe 12 between the nozzle 8 and the processing liquid supply source 10 .
- the filter 15 removes foreign matter and air bubbles in the processing liquid.
- a filter 15 is provided in the pipe 12 between the nozzle 8 and the pump 14 .
- the on-off valve 17 supplies and stops the supply of the processing liquid from the nozzle 8 .
- An on-off valve 17 is provided in the pipe 12 between the nozzle 8 and the filter 15 .
- the suckback valve 18 performs a suction operation and a push operation.
- a suckback valve 18 is provided in the pipe 12 between the nozzle 8 and the on-off valve 17 .
- the suck back valve 18 is arranged adjacent to the on-off valve 17 , but may be arranged away from the on-off valve 17 .
- the substrate processing apparatus 1 also includes a control unit 20 and a storage unit (not shown).
- the control unit 20 controls each component of the substrate processing apparatus 1 .
- the controller 20 comprises one or more processors such as, for example, a central processing unit (CPU).
- the storage unit includes, for example, at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and hard disk.
- the storage unit stores computer programs necessary for controlling each component of the substrate processing apparatus 1 .
- the configurations of the on-off valve 17 and the suck-back valve 18 will be described.
- the on-off valve 17 and the suckback valve 18 are integrated.
- the on-off valve 17 and the suck-back valve 18 are composed of, for example, a DCV (digital control valve) capable of adjusting various parameters with electric signals.
- DCV digital control valve
- the on-off valve 17 includes a case 21 , a diaphragm 23 , a rod 25 , a conversion section 27 and an electric motor 29 .
- the case 21 includes an upstream channel 31 , an opening/closing chamber 33 and a connecting channel 35 .
- the upstream channel 31 , the opening/closing chamber 33 , and the connecting channel 35 are spaces provided inside the case 21 .
- a portion of the pipe 12 on the filter 15 side is connected to the upstream flow path 31 .
- Switching chamber 33 includes a valve seat 37 for receiving diaphragm 23 .
- the connecting channel 35 is connected to a suck-back channel 51, which will be described later.
- the diaphragm 23 is used as a valve element. A peripheral portion of the diaphragm 23 is attached to a side wall of the internal space of the case 21 .
- the diaphragm 23 separates the opening/closing chamber 33 from the space SP1 shown in FIG. Therefore, the processing liquid in the opening/closing chamber 33 does not leak into the space SP1.
- the central portion of the diaphragm 23 is connected to the lower end of the rod 25 .
- the upper end of the rod 25 is connected to the rotation output shaft 29A of the electric motor 29 via the converting portion 27.
- Each of the converting portion 27 and a later-described converting portion 47 includes a plurality of gears and guide portions.
- the conversion unit 27 converts the rotation of the rotation output shaft 29A of the electric motor 29 into linear motion in the axial direction of the rod 25 (the Z direction in FIG. 2).
- a stepping motor (pulse motor) is used as the electric motor 29 and an electric motor 49, which will be described later.
- the suckback valve 18 includes a case 41 , a diaphragm 43 , a rod 45 , a conversion portion 47 and an electric motor 49 .
- the case 41 includes a suckback channel 51 .
- the suckback channel 51 is a space provided inside the case 41 .
- a portion of the pipe 12 on the nozzle 8 side is connected to the suckback flow path 51 .
- the upstream channel 31, the opening/closing chamber 33, the connecting channel 35, and the suck-back channel 51 communicate with each other.
- the diaphragm 43 is used as a valve body.
- the outer peripheral portion of the diaphragm 43 is attached to the side wall of the internal space of the case 41 .
- the diaphragm 43 separates the suck-back flow path 51 from the space SP2 shown in FIG.
- the central portion of the diaphragm 43 is connected to the lower end of the rod 45 .
- the upper end of the rod 45 is connected to the rotation output shaft 49A of the electric motor 49 via the converting portion 47.
- the conversion unit 47 converts rotation of the rotation output shaft 49A of the electric motor 49 into linear motion of the rod 45 in the axial direction.
- a transport robot (not shown) transports the substrate W onto the spin chuck 5 of the holding and rotating unit 2 .
- the spin chuck 5 holds the substrate W transferred.
- the rotating mechanism 6 rotates the spin chuck 5 holding the substrate W at an arbitrary timing in order to spread the processing liquid on the substrate W.
- the on-off valve 17 is closed. That is, the central portion of the diaphragm 23 of the on-off valve 17 is pressed against the valve seat 37 . Also, at time t0, the height of the central portion of the diaphragm 43 of the suckback valve 18 is at the preset suckback position SB2.
- the controller 20 causes the on-off valve 17 to perform an opening operation by sending an ON signal (open signal) to the electric motor 29 of the on-off valve 17 .
- the processing liquid is discharged from the nozzle 8 onto the substrate W (processing liquid discharging step).
- the opening operation of the on-off valve 17 starts at time t1 and ends at time t2.
- the time from time t1 to time t2 is called opening time OT.
- the symbol AMT is the operation amount (movement amount) of the central portion of the diaphragm 23 of the on-off valve 17 .
- the amount of motion AMT is given by the number of steps. That is, in the opening operation, the central portion of the diaphragm 23 moves the operation amount AMT during the opening operation time OT.
- control unit 20 starts the pushing operation of the suck back valve 18 at the end of the opening operation at time t2. After that, the push-out operation ends at time t3.
- the central portion of the diaphragm 43 of the suckback valve 18 moves from the suckback position SB2 to the discharge position DS.
- the operation amount (movement amount) of the central portion of the diaphragm 43 is also given by the number of steps.
- the controller 20 sends an OFF signal (close signal) to the electric motor 29 of the on-off valve 17 to cause the on-off valve 17 to close.
- ejection of the processing liquid from the nozzles 8 is stopped (ejection stop step).
- the closing operation starts at time t4 and ends at time t5.
- the time from time t4 to time t5 is called closing time CT.
- the closing motion the central portion of the diaphragm 23 moves the aforementioned amount of motion AMT during the closing motion time CT.
- the closing operation time CT is, for example, 0.1 seconds to 0.3 seconds.
- the liquid outage state (liquid outage) is adjusted by changing the closing operation time CT.
- the control unit 20 adjusts the liquid outage position by causing the suck back valve 18 to perform the first suction operation in conjunction with the closing operation of the on-off valve 17 (liquid outage position adjusting step).
- the liquid cut-off position is a position where the treatment liquid LQ ejected in a columnar shape from the nozzle 8 (nozzle 108) is divided.
- the control unit 20 adjusts the height of the tip surface of the nozzle 8 (or the height of the discharge port 8B) and the position where the liquid runs out near that height.
- the liquid shortage position is indirectly measured at the liquid surface position immediately after the liquid shortage.
- the liquid surface position immediately after the liquid runs out is adjusted to a range of -2 mm or more and 0 mm or less, for example, when the height of the tip surface of the nozzle 8 is 0 mm.
- the range of the liquid surface position indirectly representing the liquid outage position is preferably from -0.5 mm to 0 mm.
- the control unit 20 causes the suck back valve 18 to start the first suction operation from time t5 when the closing operation of the on-off valve 17 is completed. That is, when the preset suction delay time DL1 from the start of the closing operation of the on-off valve 17 (time t4) to time t5 elapses, the suck back valve 18 starts the first suction operation.
- the first suction operation is performed during the suction time SK1 from time t5 to time t6.
- the operation amount AM1 (the number of steps) is the distance from the ejection position DS to the adjustment position SB1.
- the central portion of the diaphragm 43 of the suck-back valve 18 moves an operation amount AM1 in the suction time SK1. That is, the moving speed of the central portion of the diaphragm 43 is a value obtained by dividing the operation amount AM1 by the suction time SK1.
- the control unit 20 causes the suck-back valve 18 to perform the second suction operation, thereby changing the liquid surface position of the processing liquid inside the nozzle 8 to the level after the liquid outage.
- the second suction operation is a suck-back operation for adjusting the liquid surface position.
- the operation amount AM2 (the number of steps) of the second suction operation is the distance from the adjustment position SB1 to the suck-back position SB2.
- the second suction operation is performed at a speed obtained by dividing the operation amount AM2 by the suction time SK2.
- the second suction operation is performed at a lower speed than the first suction operation. That is, the speed of the first suction operation in the liquid shortage position adjustment process is faster than the speed of the second suction operation in the liquid surface position adjustment process.
- the suction time SK1 of the first suction operation is, for example, 0.1 seconds to 0.2 seconds.
- the suction time SK2 of the second suction operation is, for example, 2 to 3 seconds for a high-viscosity treatment liquid.
- the suction time SK2 is 0.8 to 1 second for medium-viscosity and low-viscosity treatment liquids.
- Each of the two actuation quantities AM1, AM2 is different depending on the case.
- the processing liquid from the sucked processing liquid may separate and the separated droplet may adhere to the inner wall of the internal channel 8A of the nozzle 8.
- These droplets are not preferable because they may become a source of particles when dried.
- the speed of the first suction operation is too slow, the normal suck back for adjusting the liquid surface position will be performed, so the function of adjusting the liquid depletion position will not work sufficiently. Therefore, it is preferable to adjust the liquid outage position by performing the first suction operation in the liquid outage position adjusting step relatively quickly. Furthermore, by slowly performing the second suction operation in the liquid surface position adjustment step, it is possible to prevent separation of liquid droplets, which are particle sources, from the sucked treatment liquid.
- the second suction delay time DL2 is, for example, around 1 second (approximately 0.5 to 1.5 seconds), but is not limited to this time. Since the second suction delay time DL2 is interposed between the first suction operation and the second suction operation, it is possible to prevent the liquid shortage from becoming unstable. Note that the second suction operation is the total of the first suction delay time DL1, the suction time SK1, and the second suction delay time DL2 when the time t4 at which the close signal is sent from the control unit 20 is used as a reference. It is performed after a certain suction delay time DL21 has elapsed.
- the rotation mechanism 6 After a predetermined amount of processing liquid is discharged from the nozzle 8 onto the upper surface of the substrate W, and the substrate W is rotated by the rotation mechanism 6, the rotation of the substrate W by the rotation mechanism 6 is stopped. After that, the holding of the substrate W by the spin chuck 5 is released. After that, the transport robot holds the substrate W on the spin chuck 5 and transports the substrate W to the next transport destination.
- the processing liquid is supplied from the nozzle 8 onto the upper surface of the other substrate W that has been transported onto the spin chuck 5 .
- the operations of the on-off valve 17 and the suck-back valve 18 at the times t9, t10 and t11 are the same as the operations of the on-off valve 17 and the suck-back valve 18 at the times t1, t2 and t3.
- control unit 20 causes the suck back valve 18 to perform the first sucking operation in conjunction with the closing operation of the on-off valve 17 . This adjusts the liquid outage position.
- Parameters for adjusting the liquid outage position include "suction delay time DL1", "movement amount AM1" and "suction time SK1".
- FIG. 4 is an evaluation result showing the relationship between the closing operation time CT of the on-off valve 17 and the suction delay time DL1.
- a constant value is used for each of the operation amount AM1 and the suction time SK1.
- 325 cP silicone oil was used in the evaluations of FIGS.
- the A judgment indicates that the liquid outage position is on or near the tip surface of the nozzle 8 and that the function of adjusting the liquid outage position is sufficiently working.
- Judgment B is a pre-stage state in which a hemispherical droplet is formed at the tip of the nozzle 8 immediately after the liquid runs out.
- the B judgment is a state in which a small amount of droplets are coming out from the tip surface of the nozzle 8 toward the + side.
- Judgment C is a state in which a hemispherical liquid droplet adheres to the tip of the nozzle 8 immediately after the liquid has run out, and it can be judged that the function of adjusting the position of the liquid shortage is not working.
- the evaluation result will be described for the case where the closing operation time CT shown in FIG. 4 is "0.1 second".
- the suction delay time DL1 is "0.05 seconds"
- the first suction operation is started too quickly, and the suction effect is not sufficiently exhibited. Therefore, the position where the liquid runs out is the position below the tip surface of the nozzle 8 .
- the judgment is C.
- the suction delay time DL1 is "0.1 seconds to 0.25 seconds”
- the determination is A. In this case, since the position where the liquid runs out is in the vicinity of the tip surface of the nozzle 8, the droplet does not adhere to the tip surface of the nozzle 8.
- the suction delay time DL1 is "0.30 seconds”
- the determination is B.
- the suction delay time DL1 is "0.35 seconds to 0.50 seconds”
- the timing of the first suction operation is late, so the position where the liquid runs out is below the tip surface of the nozzle 8. That is, for a moment, a hemispherical liquid droplet adheres to the tip of the nozzle 8, and then the first suction operation is performed. Therefore, the operation is the same as normal suck back (adjustment of the liquid surface position).
- the width (period) of the range of A judgment and B judgment is 0.2 seconds to 0.25 seconds in the three closing operation times CT.
- the range of A judgment (the effective range of the function for adjusting the liquid outage position) shifts depending on the closing operation time CT. For example, when the closing operation time CT is 0.1 seconds, one end of the A determination range is the suction delay time DL1 of 0.10 seconds. Further, when the closing operation time CT is 0.2 seconds, one end of the A determination range is the suction delay time DL1 of 0.20 seconds. For these reasons, it is effective, for example, to perform the first suction operation at time t5 in FIG. 3 when the on-off valve 17 is completely closed.
- the operation amount AM1 is the suction amount of the treatment liquid. If the operation amount AM1 is small, the liquid surface position immediately after the liquid runs out protrudes from the tip surface of the nozzle 8 to the positive side. When the operation amount AM1 is large, the state immediately after the liquid runs out is a state in which the tip surface of the nozzle 8 is retracted to the - (minus) side. If the operation amount AM1 is too large, droplets are separated from the sucked processing liquid, and the droplets tend to adhere to the inner wall of the internal flow path 8A of the nozzle 8. FIG. Therefore, the operation amount AM1 is set within a range that is neither too large nor too small.
- FIG. 5 shows evaluation results showing the relationship between the suction delay time DL1 and the suction time SK1.
- the suction delay time DL1 in FIG. 5 is the suction delay time DL1 (0.2 to 0.35 seconds) for the A judgment when the closing operation time CT in FIG. 4 is 0.2 seconds.
- a constant value is used as the operation amount AM1.
- the determination is B.
- the B judgment is also judged to be within the usable range. In this regard, the B determination may be disabled.
- the range of the liquid surface position immediately after the liquid shortage indirectly indicating the liquid shortage position is -2 mm or more and 2 mm or less.
- the judgment is C.
- the suck back valve 18 is caused to perform the first suction operation in conjunction with the closing operation of the on-off valve 17 .
- the liquid outage position can be easily adjusted, thereby easily aligning the liquid outage position with the tip surface of the nozzle 8 and its vicinity.
- the position where the liquid is cut off can be easily adjusted, it is possible to prevent the occurrence of film thickness unevenness, coating unevenness, and the like due to the poor liquid cutoff state.
- the control unit 20 adjusts the liquid cut-off position to the height of the tip surface of the nozzle 8 and its vicinity. If the liquid cut-off position is adjusted to the tip surface of the nozzle 8 and its vicinity, for example, it is possible to suppress variations in the discharge amount of the treatment liquid from the nozzle 8, thereby reducing the film thickness caused by the poor liquid cut-off state. Unevenness can be prevented.
- control unit 20 adjusts the liquid surface position of the processing liquid inside the nozzle 8 by causing the suck back valve 18 to perform the second suction operation after adjusting the liquid depletion position. That is, the controller 20 performs a two-stage suction operation. The first suction operation is used to adjust the position where the liquid is cut off, and the second suction operation is used to adjust the surface position of the processing liquid inside the nozzle 8 .
- FIG. 6 is a timing chart for explaining the operation of the substrate processing apparatus 1 according to the second embodiment.
- the control unit 20 causes the suck back valve 18 to start the first suction operation at time t5 when the closing operation of the on-off valve 17 is completed when adjusting the liquid outage position.
- the control unit 20 when adjusting the liquid outage position, causes the suck back valve 18 to perform the first operation within a preset period SA from time t5 when the closing operation of the on-off valve 17 is completed.
- a suction operation may be initiated. This adjusts the liquid outage position.
- the first suction operation is performed within a preset period SA from time t5 when the closing operation of the on-off valve 17 is completed. Note that in FIG. 6, the first suction operation is started at time t51 within the period SA. Also, the period SA is determined by experiments, such as the range of A judgment and B judgment (or A judgment) shown in FIG.
- the function of adjusting the liquid depletion position can be activated without starting the first suction operation at the time when the closing operation of the on-off valve 17 is completed. In other words, it is possible to ensure the width of the start timing of the first suction operation for activating the function of adjusting the liquid depletion position.
- FIG. 7 is a timing chart for explaining the operation of the substrate processing apparatus 1 according to the third embodiment.
- the control unit 20 causes the suck back valve 18 to start the first suction operation at time t5 when the closing operation of the on-off valve 17 is completed when adjusting the liquid outage position.
- the control unit 20 causes the suck-back valve 18 to perform the first suction operation while the on-off valve 17 is closing when adjusting the liquid outage position.
- the first suction operation may be terminated after the operation is started and the closing operation is completed. This adjusts the liquid outage position.
- Example 1 a highly viscous treatment liquid was used.
- a processing liquid with a medium viscosity for example, 65 cP
- the high-viscosity treatment liquid has a large inertial force and the treatment liquid moves. function works well (see the width of the range of determination A in FIG. 4 and the period SA in FIG. 6).
- the present invention is not limited to the above embodiments, and can be modified as follows.
- the processing liquid was a high-viscosity processing liquid (eg, 325 cP), and the processing liquid in Example 3 described above was a processing liquid with medium viscosity (eg, 65 cP).
- the viscosity of the treatment liquid may be medium and high viscosity of about 45 cP to 500 cP.
- the processing liquid may also be a processing liquid having a viscosity other than about 45 cP to 500 cP.
- control unit 20 When using a high-viscosity processing liquid, the control unit 20 causes the suck-back valve 18 to operate within a preset period SA from time t5 when the closing operation of the on-off valve 17 is completed when adjusting the liquid outage position. It is preferable to initiate one suction operation.
- the position where the liquid runs out can be easily adjusted.
- control unit 20 causes the suck-back valve 18 to perform the first suction while the on-off valve 17 is closing when adjusting the liquid depletion position. It is preferred to initiate the action and end the suction action after the closing action has ended.
- the position where the liquid runs out can be easily adjusted.
- the second suction operation has a suction delay from the end time t6 of the first suction operation to a preset time t7. Started after time DL2 has elapsed.
- the second suction operation may be started at the end time t6 of the first suction operation. That is, in this case, the suction delay time DL2 is 0 (zero) seconds.
- the speed of the second suction operation is preferably slower than the speed of the first suction operation.
- the speed of the second suction operation is as fast as the first suction operation (for example, the suction time SK1 is 0.1 seconds)
- droplets are separated from the sucked processing liquid, and the internal flow path 8A of the nozzle 8 , and the droplets may become a particle source.
- the second suction operation is preferably started after a suction delay time DL2 from the end time t6 of the first suction operation to a preset time t7 has elapsed.
- the substrate processing apparatus 1 was provided with a single suckback valve 18 .
- the substrate processing apparatus 1 may include a suckback valve 71 in addition to the suckback valve 18, as shown in FIG.
- the suckback valve 71 is provided in the pipe 12 between the nozzle 8 and the suckback valve 18 .
- the arrangement of the two suckback valves 18, 71 may be reversed.
- Each of the two suckback valves 18, 71 may be driven by an electric motor or may be driven by gas.
- Each pneumatically actuated suckback valve 18, 71 may employ a speed controller or an electro-pneumatic regulator.
- control unit 20 may cause the suck-back valve 18 to perform the first suck-back operation, and may cause the second suck-back valve 71 to perform the second suck-back operation. Also, the two roles may be reversed. That is, the control unit 20 may cause the second suck-back valve 71 to perform the first suction operation, and may cause the suck-back valve 18 to perform the second suction operation.
- the control unit 20 adjusted the liquid cut-off position to the height of the tip surface of the nozzle 8 . This adjustment was performed using the liquid surface position after liquid depletion, which indirectly represents the liquid depletion position.
- the substrate processing apparatus 1 may be provided with a high-speed camera capable of photographing the vicinity of the tip portion of the nozzle 8, and the control section 20 may be configured to measure the position where the liquid has run out from the image photographed by the high-speed camera. . It is assumed that the high-speed camera has a frame rate (frame/second) photographing function capable of finely measuring the position where the liquid has run out.
- control unit 20 may perform only the first suction operation without performing the second suction operation.
- the substrate processing apparatus 1 may further include a pump in the pipe 12 between the filter 15 and the on-off valve 17 in addition to the pump 14 . That is, the substrate processing apparatus 1 may have two or more pumps.
- a photoresist liquid and an SOG liquid were used as processing liquids.
- the treatment liquid is not limited to these.
- the treatment liquid may be, for example, a solvent, a developer, a rinse liquid, an etchant, or a cleaning liquid.
- thinner may be used as the solvent.
- the rinse liquid may be, for example, pure water such as deionized water (DIW), or a surfactant rinse liquid.
- the etchant may be, for example, hydrofluoric acid (HF), a mixture of hydrofluoric acid (HF) and nitric acid (HNO 3 ), or TMAH (tetramethylammonium hydroxide).
- SC1, SC2 or SPM may be used as the cleaning solution.
- SC1 is a mixture of ammonia, hydrogen peroxide (H 2 O 2 ), and water.
- SC2 is a mixture of hydrochloric acid (HCl), hydrogen peroxide ( H2O2 ) and water.
- SPM is a mixture of sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ).
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Abstract
Description
図1を参照する。基板処理装置1は、保持回転部2と処理液供給部3を備える。保持回転部2は、水平姿勢の基板Wを保持し、基板Wの略中心を通過する鉛直軸AX1周りに基板Wを回転させる。保持回転部2は、スピンチャック5と回転機構6を備える。回転機構6は、例えば電動モータを備える。回転機構6は、基板Wを保持するスピンチャック5を鉛直軸AX1周りに回転させる。
次に、図3を参照しながら基板処理装置1の動作を説明する。図示しない搬送ロボットは、保持回転部2のスピンチャック5上に基板Wを搬送する。スピンチャック5は、搬送された基板Wを保持する。回転機構6は、処理液を基板W上に広げるために、基板Wが保持されたスピンチャック5を任意のタイミングで回転させる。
本実施例では、制御部20は、開閉弁17の閉動作に連動させてサックバック弁18に第1の吸引動作を行わせている。これにより、液切れ位置を調整する。液切れ位置を調整するパラメータとして、「吸引遅延時間DL1」、「動作量AM1」および「吸引時間SK1」がある。
比較的に高粘度(例えば325cP)の処理液の場合、開閉弁17の閉動作が完了しても液に流動性がある。そのため、液が完全に止まるまで時間がある。この時間内に第1の吸引動作を行うことで、液切れ位置を調整することができる。
動作量AM1は、処理液の吸引量である。動作量AM1が小さいと、液切れ直後の液面位置がノズル8の先端面から+側に突出した状態になる。動作量AM1が大きいと液切れ直後の状態がノズル8の先端面から-(マイナス)側に引き込んだ状態になる。動作量AM1が大き過ぎると、吸引された処理液から液滴が分離して、その液滴がノズル8の内部流路8Aの内壁に付着しやすくなる。そのため、大き過ぎず小さ過ぎない範囲で動作量AM1が設定される。
吸引時間SK1は、吸引速度に関係するパラメータである。図5は、吸引遅延時間DL1と吸引時間SK1の関係を示す評価結果である。図5の吸引遅延時間DL1は、図4の閉動作時間CTが0.2秒のときのA判定の吸引遅延時間DL1(0.2秒~0.35秒)である。なお、動作量AM1は一定値が用いられる。
8 … ノズル
12 … 配管
17 … 開閉弁
18,71 … サックバック弁
20 … 制御部
23,43 … ダイアフラム
CT … 閉動作時間
DL1 … 吸引遅延時間
AM1 … 動作量
SK1 … 吸引時間
SA … 期間
Claims (11)
- 処理液を吐出するノズルと、前記ノズルに接続する配管と、前記配管に設けられた開閉弁と、前記ノズルと前記開閉弁の間の前記配管に設けられたサックバック弁と、を備えた基板処理装置の処理液供給方法であって、
前記開閉弁に閉動作を行わせることにより、前記ノズルからの前記処理液の吐出を停止する吐出停止工程と、
前記開閉弁の前記閉動作に連動させて前記サックバック弁に吸引動作を行わせることで、前記ノズルから柱状に吐出される前記処理液が分断される位置である液切れ位置を調整する液切れ位置調整工程と、
を備えていることを特徴とする処理液供給方法。 - 請求項1に記載の処理液供給方法において、
前記液切れ位置調整工程は、前記液切れ位置を前記ノズルの先端面の高さに調整することを特徴とする処理液供給方法。 - 請求項1または2に記載の処理液供給方法において、
前記液切れ位置調整工程の後に、前記サックバック弁に第2の吸引動作を行わせることで、前記ノズル内の流路に存在する処理液の下流側の末端位置である処理液の液面位置を調整する液面位置調整工程を更に備えていることを特徴とする処理液供給方法。 - 請求項3に記載の処理液供給方法において、
前記液切れ位置調整工程における前記吸引動作の速度は、前記液面位置調整工程における前記第2の吸引動作の速度よりも速いことを特徴とする処理液供給方法。 - 請求項3に記載の処理液供給方法において、
前記液面位置調整工程における前記第2の吸引動作は、前記液切れ位置調整工程における前記吸引動作の終了時点から予め設定された時点までの遅延時間が経過した後に開始されることを特徴とする処理液供給方法。 - 請求項1または2に記載の処理液供給方法において、
前記液切れ位置調整工程は、前記開閉弁の前記閉動作が終了した時点から予め設定された期間内に前記サックバック弁に前記吸引動作を開始させることで、前記液切れ位置を調整することを特徴とする処理液供給方法。 - 請求項1または2に記載の処理液供給方法において、
前記液切れ位置調整工程は、前記開閉弁が前記閉動作を行っている途中に前記サックバック弁に吸引動作を開始させ、かつ前記閉動作が終了した後に前記吸引動作を終了させることで、前記液切れ位置を調整することを特徴とする処理液供給方法。 - 処理液を吐出するノズルと、
前記ノズルに接続する配管と、
前記配管に設けられた開閉弁と、
前記ノズルと前記開閉弁の間の前記配管に設けられたサックバック弁と、
制御部と、を備え、
前記制御部は、前記開閉弁に閉動作を行わせることにより、前記ノズルからの前記処理液の吐出を停止し、
前記制御部は、前記開閉弁の前記閉動作に連動させて前記サックバック弁に吸引動作を行わせることで、前記ノズルから柱状に吐出される前記処理液が分断される位置である液切れ位置を調整することを特徴とする基板処理装置。 - 請求項8に記載の基板処理装置において、
前記制御部は、前記液切れ位置を調整した後に、前記サックバック弁に第2の吸引動作を行わせることで、前記ノズル内の流路に存在する処理液の下流側の末端位置である処理液の液面位置を調整することを特徴とする基板処理装置。 - 請求項9に記載の基板処理装置において、
前記サックバック弁は、単一のサックバック弁であり、
前記制御部は、前記単一のサックバック弁に前記吸引動作および前記第2の吸引動作を行わせることを特徴とする基板処理装置。 - 請求項9に記載の基板処理装置において、
前記ノズルと前記開閉弁の間の前記配管に設けられた第2サックバック弁を更に備え、
前記制御部は、前記吸引動作を前記サックバック弁に行わせ、また、前記第2の吸引動作を前記第2サックバック弁に行わせることを特徴とする基板処理装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05293358A (ja) * | 1992-04-15 | 1993-11-09 | Hitachi Ltd | 流動体供給装置 |
JP2010171295A (ja) * | 2009-01-26 | 2010-08-05 | Tokyo Electron Ltd | 処理液供給システムにおける液切れ制御方法 |
WO2016047182A1 (ja) * | 2014-09-22 | 2016-03-31 | 株式会社Screenホールディングス | 塗布装置 |
JP2016111306A (ja) * | 2014-12-10 | 2016-06-20 | 株式会社Screenホールディングス | サックバックバルブ、サックバックバルブシステムおよび基板処理装置 |
JP2016139665A (ja) * | 2015-01-26 | 2016-08-04 | 東京エレクトロン株式会社 | 処理液供給装置、処理液供給方法及び記憶媒体 |
JP2019012824A (ja) | 2017-06-30 | 2019-01-24 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6420604U (ja) | 1987-07-29 | 1989-02-01 | ||
JP6212819B2 (ja) * | 2012-09-27 | 2017-10-18 | 株式会社Screenホールディングス | 処理液処理装置および処理液処理方法 |
WO2014050941A1 (ja) * | 2012-09-27 | 2014-04-03 | 大日本スクリーン製造株式会社 | 処理液供給装置、基板処理装置、処理液供給方法、基板処理方法、処理液処理装置および処理液処理方法 |
JP6505429B2 (ja) * | 2014-12-12 | 2019-04-24 | 株式会社Screenホールディングス | 基板処理装置、処理液供給装置および基板乾燥方法 |
JP6512894B2 (ja) * | 2015-03-27 | 2019-05-15 | 株式会社Screenホールディングス | 処理液供給装置および処理液供給装置の制御方法 |
JP6905902B2 (ja) * | 2017-09-11 | 2021-07-21 | 東京エレクトロン株式会社 | 処理液供給装置 |
JP7177628B2 (ja) * | 2018-08-20 | 2022-11-24 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置および基板処理システム |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05293358A (ja) * | 1992-04-15 | 1993-11-09 | Hitachi Ltd | 流動体供給装置 |
JP2010171295A (ja) * | 2009-01-26 | 2010-08-05 | Tokyo Electron Ltd | 処理液供給システムにおける液切れ制御方法 |
WO2016047182A1 (ja) * | 2014-09-22 | 2016-03-31 | 株式会社Screenホールディングス | 塗布装置 |
JP6420604B2 (ja) | 2014-09-22 | 2018-11-07 | 株式会社Screenホールディングス | 塗布装置 |
JP2016111306A (ja) * | 2014-12-10 | 2016-06-20 | 株式会社Screenホールディングス | サックバックバルブ、サックバックバルブシステムおよび基板処理装置 |
JP2016139665A (ja) * | 2015-01-26 | 2016-08-04 | 東京エレクトロン株式会社 | 処理液供給装置、処理液供給方法及び記憶媒体 |
JP2019012824A (ja) | 2017-06-30 | 2019-01-24 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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CN118679552A (zh) | 2024-09-20 |
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