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WO2023054531A1 - Plaque de douche - Google Patents

Plaque de douche Download PDF

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Publication number
WO2023054531A1
WO2023054531A1 PCT/JP2022/036301 JP2022036301W WO2023054531A1 WO 2023054531 A1 WO2023054531 A1 WO 2023054531A1 JP 2022036301 W JP2022036301 W JP 2022036301W WO 2023054531 A1 WO2023054531 A1 WO 2023054531A1
Authority
WO
WIPO (PCT)
Prior art keywords
shower plate
inner space
introduction holes
plate according
base
Prior art date
Application number
PCT/JP2022/036301
Other languages
English (en)
Japanese (ja)
Inventor
猛 宗石
大貴 渡邉
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2023551811A priority Critical patent/JPWO2023054531A1/ja
Publication of WO2023054531A1 publication Critical patent/WO2023054531A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the disclosed embodiments relate to shower plates.
  • a shower head that ejects process gas onto a substrate such as a semiconductor wafer has been used.
  • a shower plate includes, for example, a disk-shaped substrate made of ceramics and having a space inside, and a plurality of ejection holes that are open on one surface of the substrate and eject gas introduced into the space inside the substrate. is known (see Patent Document 1).
  • a shower plate includes a base, partition walls, supply ports, and a plurality of ejection holes.
  • the substrate is a plate-like substrate made of ceramics and having a space inside.
  • the partition separates the space of the substrate into an inner space and a channel located around the inner space.
  • the supply port supplies gas to the channel.
  • a plurality of ejection holes communicate with the inner space and open to one surface of the substrate to eject gas.
  • the partition wall has a plurality of introduction holes for communicating the inner space and the channel and for introducing the gas flowing through the channel into the inner space.
  • FIG. 1 is a schematic perspective view of a shower plate according to the first embodiment.
  • FIG. FIG. 2 is a schematic side cross-sectional view of the shower plate according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional plan view of the shower plate according to the first embodiment.
  • FIG. 4 is a schematic cross-sectional plan view of a shower plate according to Modification 1 of the first embodiment.
  • FIG. 5 is a schematic cross-sectional plan view of a shower plate according to Modification 2 of the first embodiment.
  • FIG. 6 is a schematic side sectional view of the shower plate according to the second embodiment.
  • FIG. 7 is a schematic cross-sectional plan view of the shower plate according to the second embodiment.
  • each embodiment can be appropriately combined within a range that does not contradict the processing content.
  • the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.
  • FIG. 1 is a schematic perspective view of a shower plate 1 according to the first embodiment.
  • FIG. 2 is a schematic side sectional view of the shower plate 1 according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional plan view of the shower plate 1 according to the first embodiment. 3 shows a schematic cross-sectional view taken along line III-III in FIG.
  • a shower plate 1 according to the first embodiment shown in FIG. 1 ejects process gas onto a substrate such as a semiconductor wafer in, for example, a semiconductor manufacturing process.
  • the shower plate 1 is mounted, for example, in a substrate processing apparatus that performs plasma processing or the like on substrates.
  • the shower plate 1 has a base 10.
  • the substrate 10 has, for example, a disk shape with a thickness in the vertical direction.
  • the base 10 has an upper surface 101 and a lower surface 102 which are circular in plan view, and a side surface 103 connecting the upper surface 101 and the lower surface 102 .
  • the upper surface 101 and the lower surface 102 of the substrate 10 are substantially parallel.
  • the lower surface 102 of the substrate 10 faces the substrate supported by the substrate support.
  • the substrate 10 is made of ceramics, for example, and has insulating properties. Ceramics constituting the substrate 10 are, for example, aluminum nitride (AlN), aluminum oxide (Al 2 O 3 , alumina), yttrium oxide (Y 2 O 3 , yttria), silicon carbide (SiC), silicon nitride (Si 3 N 4 ), etc. as a main component.
  • the main component is, for example, a material that accounts for 50% by mass or more or 80% by mass or more of the material.
  • the shape of the substrate 10 is arbitrary.
  • the substrate 10 has a disk shape, but it is not limited to this, and may have an elliptical plate shape, a rectangular plate shape, a trapezoidal plate shape, or the like.
  • a space 11 is provided inside the base 10 .
  • a partition wall 20 is located in the space 11 of the base body 10 and separates the space 11 of the base body 10 into an inner space 111 and a flow path 112 positioned around the inner space 111 .
  • the shower plate 1 has a supply port 12 and a plurality of ejection holes 13 .
  • the supply port 12 is positioned on the side surface 103 of the substrate 10, communicates with the flow path 112, and is connected to a process gas supply source via a gas supply pipe (not shown) or the like.
  • the supply port 12 is a through hole penetrating the side surface 103 of the substrate 10 and the outer surface of the channel 112 in the radial direction of the substrate 10 .
  • a process gas supplied from a process gas supply source is introduced into the supply port 12 through a gas supply pipe.
  • the supply port 12 supplies the introduced process gas to the flow path 112 .
  • the supply port 12 does not necessarily have to be positioned on the side surface 103 of the substrate 10, and may be positioned on the upper surface 101 or the lower surface 102 of the substrate 10, for example. Moreover, the number of supply ports 12 is arbitrary, and one supply port 12 may be provided in the base 10 , or a plurality of supply ports 12 may be provided in the base 10 . For example, in FIGS. 2 and 3, two supply ports 12 located on side surfaces 103 of substrate 10 are shown.
  • a plurality of ejection holes 13 communicate with the inner space 111 and open to the lower surface 102 of the substrate 10 to eject process gas.
  • the plurality of ejection holes 13 are through holes penetrating the bottom surface of the inner space 111 and the bottom surface 102 of the base 10 . It should be noted that the plurality of ejection holes 13 do not necessarily need to be positioned on the lower surface 102 of the base 10, and may be positioned on the upper surface 101 of the base 10, for example.
  • the partition wall 20 has a plurality of introduction holes 21 that communicate the inner space 111 and the flow path 112 and introduce the process gas flowing through the flow path 112 into the inner space 111 .
  • the partition wall 20 separates the space 11 in the base body 10 into the inner space 111 and the flow channel 112 , and the inner space 111 and the flow channel 112 are separated by a plurality of partition walls 20 . are communicated by the introduction hole 21 of the That is, the partition wall 20 introduces the process gas from the flow path 112 into the inner space 111 through the plurality of introduction holes 21 while generating a pressure difference between the inner space 111 and the flow path 112 .
  • the diffusion of the process gas introduced into the inner space 111 is promoted as compared with the case where the space 11 in the base body 10 does not have the partition wall 20. uneven distribution of the process gas is less likely to occur. Specifically, when the process gas is introduced from the supply port 12 into the channel 112 , the pressure of the process gas in the channel 112 is increased by the partition wall 20 , so that the process gas is introduced from the channel 112 through the plurality of introduction holes 21 . , the flow velocity of the process gas introduced into the inner space 111 increases. Further, since the partition wall 20 has a plurality of introduction holes 21, the process gas is introduced into the inner space 111 from a plurality of directions.
  • the action of the partition wall 20 and the plurality of introduction holes 21 stirs the process gas in the inner space 111, and as a result, the process gas becomes more homogeneous in the inner space 111 where the plurality of ejection holes 13 are located. Therefore, according to the shower plate 1 of this embodiment, the uniformity of the process gas jetted from the plurality of jet holes 13 can be improved.
  • the partition 20 has an annular shape, and the plurality of introduction holes 21 are arranged side by side at intervals in the circumferential direction of the partition 20 . Specifically, the plurality of introduction holes 21 are positioned at regular intervals in the circumferential direction of the partition wall 20 .
  • the plurality of introduction holes 21 are inclined with respect to the radial direction of the partition wall 20 .
  • the plurality of introduction holes 21 are arranged in a direction toward an inner wall surface of the partition wall 20 facing the inner space 111 (that is, a direction approaching a tangent to the inner wall surface of the partition wall 20) with respect to the radial direction of the partition wall 20. leaning
  • the process gas introduced into the inner space 111 diffuses to the vicinity of the inner wall surface of the partition wall 20 , so that a swirl flow of the process gas can be generated along the inner wall surface of the partition wall 20 . Therefore, according to the shower plate 1 of the present embodiment, the process gas introduced into the inner space 111 can be agitated by the swirling flow, and the uniformity of the process gas ejected from the plurality of ejection holes 13 can be improved. can be improved.
  • the plurality of introduction holes 21 are located at positions that do not intersect the virtual line L extending along the central axis of the supply port 12 on the outer surface of the partition wall 20 facing the flow path 112 .
  • the plurality of introduction holes 21 are located at positions displaced in the circumferential direction of the partition 20 from positions intersecting the imaginary line L extending along the central axis of the supply port 12 on the outer surface of the partition 20 facing the flow path 112 . located in
  • the distance between the supply port 12 and the plurality of introduction holes 21 is greater than, for example, when the plurality of introduction holes 21 are located at positions that intersect the virtual line L, so that the flow path from the supply port 12 is increased.
  • the process gas supplied to 112 can be temporarily retained within the flow path 112 .
  • the pressure difference between the inner space 111 and the flow path 112 increases, and the process gas is introduced into the inner space 111 from the flow path 112 through the plurality of introduction holes 21. Diffusion of the process gas to be applied is promoted more. Therefore, according to the shower plate 1 according to the present embodiment, it is possible to further suppress uneven distribution of the process gas in the inner space 111 where the plurality of ejection holes 13 are located. The uniformity of the process gas can be further improved.
  • each of the plurality of ejection holes 13 is smaller than the cross-sectional area of each of the plurality of introduction holes 21 .
  • the cross-sectional area of each of the plurality of introduction holes 21 is smaller than the cross-sectional area of the supply port 12 .
  • the supply port 12, each of the plurality of introduction holes 21, and each of the plurality of ejection holes 13 are aligned in the flow direction of the process gas. The cross-sectional area becomes smaller in each order.
  • the holes through which the process gas passes can be narrowed in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
  • the sum of the cross-sectional areas of the multiple ejection holes 13 is smaller than the sum of the cross-sectional areas of the multiple introduction holes 21 .
  • the total cross-sectional area of the plurality of introduction holes 21 is smaller than the total cross-sectional area of the supply port 12 .
  • the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 are the total sum of the cross-sectional areas in the order of the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 in the flow direction of the process gas. becomes smaller.
  • the holes through which the process gas passes can be narrowed in stages along the flow direction of the process gas. Therefore, according to the shower plate 1 of the present embodiment, the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
  • the total number of the plurality of ejection holes 13 is greater than the total number of the plurality of introduction holes 21 . Also, the total number of the plurality of introduction holes 21 is greater than the total number of supply ports. In other words, the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 increase in the order of the supply port 12, the plurality of introduction holes 21, and the plurality of ejection holes 13 in the flow direction of the process gas. .
  • the shower plate 1 of the present embodiment the flow velocity of the process gas from the supply port 12 to the plurality of ejection holes 13 via the plurality of introduction holes 21 can be gradually increased. Process gas can be smoothly ejected from the ejection holes 13 .
  • shower plate 1 is formed by stacking a plurality of ceramic green sheets. Specifically, a plurality of ceramic green sheets forming the substrate 10 are prepared. Here, a plurality of ceramic green sheets having different shapes are prepared to form the spaces 11, the supply ports 12, the ejection holes 13, and the partition walls 20. FIG. Then, a plurality of prepared ceramic green sheets are laminated.
  • the laminate of ceramic green sheets is degreased and fired.
  • the firing temperature is, for example, 1100° C. or higher and 1850° C. or lower. Thereby, the shower plate 1 is obtained.
  • FIG. 4 is a schematic cross-sectional plan view of the shower plate 1 according to Modification 1 of the first embodiment.
  • the plurality of introduction holes 21A have a tapered shape whose width decreases from the flow path 112 toward the inner space 111.
  • the plurality of introduction holes 21A have a tapered shape whose width decreases from the flow path 112 toward the inner space 111.
  • FIG. 5 is a schematic cross-sectional plan view of a shower plate 1 according to Modification 2 of the first embodiment.
  • the supply port 12A is inclined in the same direction as the plurality of introduction holes 21A. That is, the plurality of introduction holes 21A are inclined with respect to the radial direction of the partition wall 20 in a direction toward the inner wall surface of the partition wall 20 facing the inner space 111 (that is, in a direction approaching a tangent to the inner wall surface of the partition wall 20). . Therefore, the supply port 12A is arranged in a direction toward the inner wall surface of the substrate 10 facing the channel 112 (that is, a tangent to the inner wall surface of the substrate 10) with respect to the radial direction of the partition wall 20 (that is, the radial direction of the substrate 10). direction).
  • the flow direction of the process gas at the supply port 12A coincides with the flow direction of the process gas at the plurality of introduction holes 21A. It can flow smoothly into the hole 21A.
  • the plurality of introduction holes 21A do not cross the virtual line L extending along the central axis of the supply port 12A on the outer surface of the partition wall 20 facing the flow path 112. not located. Therefore, the process gas supplied from the supply port 12 ⁇ /b>A to the channel 112 can be temporarily retained in the channel 112 .
  • the supply port 12A may have a tapered shape in which the width decreases from the outside of the substrate 10 toward the channel 112 .
  • FIG. 6 is a schematic side sectional view of the shower plate 1 according to the second embodiment.
  • FIG. 7 is a schematic cross-sectional plan view of the shower plate 1 according to the second embodiment. 7 shows a schematic cross-sectional view taken along line VII--VII in FIG.
  • the shower plate 1 As shown in FIG. 6, the shower plate 1 according to this embodiment has a heating element 30 and an electrode 40 inside the base 10 .
  • the heating element 30 is positioned so as to overlap at least the inner space 111 in the thickness direction of the base 10 .
  • the heating element 30 is positioned overlapping the inner space 111 and the partition wall 20 in the thickness direction of the base 10 .
  • the heating element 30 may be positioned so as to overlap the inner space 111 , the partition wall 20 and the flow path 112 in the thickness direction of the base 10 .
  • the heating element 30 is positioned between the upper surface 101 of the base 10 and the inner space 111 .
  • the heating element 30 may be positioned between the lower surface 102 of the base 10 and the inner space 111 .
  • the heating element 30 generates heat by Joule heat generated by power supplied from a heater power supply (not shown).
  • the heating element 30 extends in layers along the upper surface 101 of the substrate 10 .
  • the heating element 30 has, for example, a disc shape in plan view.
  • the heating element 30 is made of, for example, metals such as nickel (Ni), tungsten (W), molybdenum (Mo) and platinum (Pt), or alloys containing at least one of the above metals.
  • the process gas can be heated in the inner space 111 by positioning the heating element 30 so as to overlap at least the inner space 111 in the thickness direction of the substrate 10 .
  • the base 10 when the heating element 30 overlaps at least the inner space 111 in the thickness direction of the base 10, the base 10 is arranged in the thickness direction of the base 10 so as to support the inner space 111, as shown in FIGS. There may be a plurality of struts 14 extending to the .
  • the heat of the heating element 30 is transmitted to the inner space 111 via the plurality of pillars 14, so that the process gas in the inner space 111 can be heated more efficiently. can.
  • the electrode 40 is positioned closer to the lower surface 102 of the base 10 than the inner space 111 is.
  • the electrode 40 is, for example, an electrode for plasma generation, and spreads in layers along the lower surface 102 of the substrate 10 .
  • the electrode 40 has, for example, a disk shape in a plan view, and has a plurality of through holes corresponding to the positions of the plurality of ejection holes 13 respectively.
  • the electrode 40 is made of, for example, metals such as nickel (Ni), tungsten (W), titanium (Ti), molybdenum (Mo) and platinum (Pt), or alloys containing at least one of the above metals.
  • a ceramic green sheet forming the base 10, a metal sheet forming the heating element 30, and a metal sheet forming the electrode 40 are prepared.
  • a plurality of ceramic green sheets having different shapes are prepared in order to form the spaces 11, the supply ports 12, the ejection holes 13, the partition walls 20, and the struts .
  • the prepared sheets are laminated.
  • the laminate of ceramic green sheets and metal sheets is degreased and fired.
  • the firing temperature is, for example, 1100° C. or higher and 1850° C. or lower.
  • the shower plate (eg, shower plate 1) according to the embodiment includes a substrate (eg, substrate 10), a partition wall (eg, partition wall 20), and supply ports (eg, supply ports 12 and 12A). , and a plurality of ejection holes (for example, ejection holes 13).
  • the substrate is a plate-like substrate made of ceramics and having a space (for example, space 11) inside.
  • the partition separates the space of the substrate into an inner space (eg, inner space 111) and a channel (eg, channel 112) located around the inner space.
  • the supply port supplies gas (eg, process gas) to the channel.
  • a plurality of ejection holes communicate with the inner space and open to one surface (for example, the lower surface 102) of the substrate to eject gas.
  • the partition wall has a plurality of introduction holes (for example, introduction holes 21 and 21A) for communicating the inner space and the channel and for introducing the gas flowing through the channel into the inner space.
  • the partition according to the embodiment may be annular, and the plurality of introduction holes may be arranged side by side at intervals in the circumferential direction of the partition.
  • the gas can be evenly introduced into the inner space along the circumferential direction of the partition wall.
  • the plurality of introduction holes according to the embodiment may be inclined with respect to the radial direction of the partition wall.
  • the shower plate according to the embodiment it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
  • the supply port according to the embodiment may be located on the side surface (for example, side surface 103) of the substrate and may be inclined in the same direction as the plurality of introduction holes.
  • the process gas supplied from the supply port to the channel can smoothly flow to the plurality of introduction holes.
  • the plurality of introduction holes according to the embodiment may have a tapered shape in which the width decreases from the flow path toward the inner space.
  • the shower plate according to the embodiment it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
  • the plurality of introduction holes according to the embodiment may be located at positions that do not intersect the virtual line extending along the central axis of the supply port on the outer wall surface of the partition facing the channel.
  • the shower plate according to the embodiment it is possible to further improve the uniformity of the gas ejected from the plurality of ejection holes.
  • the cross-sectional area of each of the plurality of ejection holes according to the embodiment may be smaller than the cross-sectional area of each of the plurality of introduction holes.
  • the cross-sectional area of each of the plurality of introduction holes may be smaller than the cross-sectional area of the supply port.
  • the sum of the cross-sectional areas of the plurality of ejection holes may be smaller than the sum of the cross-sectional areas of the plurality of introduction holes.
  • the sum of the cross-sectional areas of the plurality of introduction holes may be smaller than the sum of the cross-sectional areas of the supply ports.
  • the total number of the plurality of ejection holes may be greater than the total number of the plurality of introduction holes.
  • the total number of the plurality of introduction holes may be greater than the total number of supply ports.
  • the supply port according to the embodiment may have a tapered shape in which the width decreases from the outside of the base toward the channel.
  • the shower plate according to the embodiment may further include a heating element (for example, heating element 30) located inside the base so as to overlap at least the inner space in the thickness direction of the base.
  • a heating element for example, heating element 30 located inside the base so as to overlap at least the inner space in the thickness direction of the base.
  • the base according to the embodiment may have a plurality of struts (for example, struts 14) that support the inner space.
  • struts 14 for example, struts 14
  • the shower plate according to the embodiment may further include an electrode (for example, electrode 40) located inside the base at a position closer to one surface of the base than the inner space.
  • an electrode for example, electrode 40 located inside the base at a position closer to one surface of the base than the inner space.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une plaque de douche comprenant un substrat, une cloison, un orifice d'alimentation et une pluralité de trous d'éjection. Le substrat est constitué de céramique et est un substrat en forme de plaque contenant un espace. La cloison sépare l'espace du substrat en un espace interne et un canal d'écoulement positionné dans la périphérie de l'espace interne. L'orifice d'alimentation alimente le canal d'écoulement en gaz. La pluralité de trous d'éjection sont en communication avec l'espace interne de manière à s'ouvrir sur une surface du substrat, et le gaz est éjecté à partir de ceux-ci. En outre, la cloison comprend une pluralité de trous d'introduction qui mettent en communication l'espace interne et le canal d'écoulement et par lesquels le gaz circulant dans le canal d'écoulement est introduit dans l'espace interne.
PCT/JP2022/036301 2021-09-29 2022-09-28 Plaque de douche WO2023054531A1 (fr)

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JP2023551811A JPWO2023054531A1 (fr) 2021-09-29 2022-09-28

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JP2021-159090 2021-09-29
JP2021159090 2021-09-29

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WO2023054531A1 true WO2023054531A1 (fr) 2023-04-06

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WO2018190220A1 (fr) * 2017-04-14 2018-10-18 住友電気工業株式会社 Tête de dispersion
JP2019114653A (ja) * 2017-12-22 2019-07-11 東京エレクトロン株式会社 基板処理装置および温度制御方法
WO2020116246A1 (fr) * 2018-12-06 2020-06-11 東京エレクトロン株式会社 Plaque de douche, appareil de traitement par plasma et procédé de traitement par plasma
WO2020241703A1 (fr) * 2019-05-30 2020-12-03 京セラ株式会社 Élément de trajet d'écoulement

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