WO2022158034A1

WO2022158034A1 - Cathode unit for magnetron sputtering device, and magnetron sputtering device

Info

Publication number: WO2022158034A1
Application number: PCT/JP2021/033475
Authority: WO
Inventors: 僚也北沢; 弘敏阪上; 辰徳磯部
Original assignee: 株式会社アルバック
Priority date: 2021-01-19
Filing date: 2021-09-13
Publication date: 2022-07-28
Also published as: TW202229594A; CN117044403A; TWI839638B; JP7543448B2; KR20230104957A; JPWO2022158034A1

Abstract

Provided is a cathode unit CU for a magnetron sputtering device SM with which it is possible to achieve substantial uniformity in the region of the target that is corroded with the progression of sputtering, and increase the target utilization efficiency, without causing a localized disappearance of plasma.　Magnet units 51-54 provided on the side opposite the sputtering surface of a target 41-44 disposed inside a vacuum chamber 1 are equipped with a linear center magnet 52 and a peripheral magnet 53 that surrounds the periphery of the center magnet and that has linear parts 53a, 53b and a bridging part 53c bridging between the two free ends of the two linear parts, in such a manner that the polarities on the target side are changed. There is generated a magnetic field Mf leaking from the sputtering surface so that a line passing through positions at which the vertical component of the magnetic field is zero extends in the longitudinal direction of the center magnet and closes in a racetrack shape. In a state in which the attitude of the peripheral magnet is maintained, the two end portions of the center magnet are respectively shifted to the sides of mutually different linear parts of the peripheral magnet in accordance with the target-side polarity of the center magnet.

Description

Cathode unit for magnetron sputtering equipment and magnetron sputtering equipment

The present invention relates to a cathode unit for a magnetron sputtering device and a magnetron sputtering device for forming a predetermined thin film on a substrate to be processed by magnetron sputtering.

A magnetron sputtering apparatus is generally provided with a magnet unit on the side opposite to the sputtering surface of a target arranged (facing) a substrate to be processed in a vacuum chamber. Then, when a rare gas such as argon gas is introduced into a vacuum chamber having a vacuum atmosphere, and a DC voltage or an AC voltage having a negative potential is applied to the target to sputter the sputtering surface of the target, ionization occurs in front of the sputtering surface. The plasma density is increased by capturing electrons and secondary electrons generated by sputtering to increase the electron density and increasing the probability of collision between the electrons and rare gas molecules.

When forming a film on a substrate to be processed (hereinafter referred to as "substrate") with a rectangular contour such as a glass substrate, a target with the same contour as the substrate is usually used. At this time, the magnet unit includes a central magnet linearly arranged on one side of a rectangular support plate (yoke) provided parallel to the target, and linear portions extending parallel to each other at equal intervals on both sides of the central magnet. and a bridging portion bridging both free ends of both linear portions, respectively, and a peripheral magnet surrounding the periphery of the central magnet with opposite polarities on the target side. , the longitudinal direction of the central magnet is the X-axis direction, and the width direction of the central magnet orthogonal to the X-axis direction is the Y-axis direction). As a result, the magnetic field leaking from the sputtering surface acts so that the line passing through the position where the vertical component of the magnetic field is zero extends in the X-axis direction and closes in a racetrack shape, and the space between the sputtering surface and the substrate (sputtering A racetrack-like plasma is generated in the space above the surface). At this time, the electrons in the plasma are bent by the electromagnetic field at both ends of the magnet unit in the X-axis direction to change direction, and move clockwise or halfway along the racetrack depending on the magnetism of the upper side of the central magnet and the peripheral magnets. move in a clockwise orbit.

Here, it is known that when a predetermined thin film is formed on a substrate using the magnetron sputtering apparatus, the distribution of film thickness and film quality deteriorates in corner regions of the substrate located on the diagonal line. This is because the electrons in the plasma remain in inertial motion when they are bent by the electromagnetic field and change their direction. It was thought to be due to local expansion axially outward. For this reason, when the magnet unit is reciprocated in the Y-axis direction with a predetermined stroke length in order to make the erosion region of the target uniform as the sputtering progresses, considering the inertial movement of the electrons, the stroke length is has to be set short, and on the contrary, the non-erosion area becomes large, resulting in poor utilization efficiency of the target. Therefore, the linear portions of the central magnet and the peripheral magnets are equidistant, and one of the linear portions and both ends of the central magnet are moved toward the other linear portion at both ends in the longitudinal direction of the magnet unit. It has been proposed to configure the distance between each straight portion to be narrower than that in its central region (see, for example, Patent Document 1).

By the way, when depositing a film on a large substrate such as a glass substrate used in the manufacture of a flat panel display, it is necessary to manufacture a long target. is also longer. In such a case, if the magnet unit of Patent Document 1 is used and the sputtered surface is sputtered while reciprocating the magnet unit in the Y-axis direction, the sputtered surface will be adjacent to both ends of the magnet unit in the longitudinal direction and directed inward thereof. It has been found that the plasma may become unstable or extinguish within a certain length range.

Therefore, the inventors of the present application focused on the trajectories and densities of electrons and secondary electrons (hereinafter referred to as "orbiting electrons") in the plasma that circulates along the racetrack, and conducted intensive research, and found the following. I came to know. That is, a conventional magnet unit having linear portions extending parallel to each other at equal intervals on both sides of the central magnet and a bridging portion bridging both free ends of the two linear portions is the initial magnet unit, and the linear portions as in Patent Document 1 are referred to as the initial magnet units. A magnet unit in which both ends of one and the central magnet are moved toward the other linear portion so that the distance between the central magnet and each linear portion is narrower than that in the central region is defined as a correction magnet unit. Further, in the racetrack-shaped plasma generated in the space between the sputtering surface and the substrate to be processed, the region near the center magnet is defined as the central region, and the region in the opposite direction is defined as the peripheral region. A simulation of the density distribution of orbiting electrons in the plasma shows that in the initial magnet unit, the density of orbiting electrons in the peripheral region before being bent by the electromagnetic field and changing direction is locally high in the XY plane. It is found that the density of orbiting electrons in the peripheral region becomes locally low after changing . From this, when focusing on the trajectory of the circulating electrons on the XZ plane, it is found that the circulating electrons scatter toward the substrate to be processed (upward in the Z-axis direction) in the central region after the orientation is changed. rice field.

In the correction magnet unit, on the XY plane, there is not much difference in the density of circulating electrons in the peripheral region before and after changing the direction. It was confirmed that scattering to the magnet unit is suppressed (in other words, it is trapped by the leakage magnetic field) compared to the initial magnet unit. On the other hand, on the XY plane, after changing the orientation, a predetermined length range extending inwardly adjacent to both longitudinal ends of the magnet unit (the interval between the central magnet and each straight line portion is the central region of the magnet unit). It was confirmed that the density of circulating electrons in the peripheral region increases and spreads in the Y-axis direction in the range of a predetermined length starting from the position where it was returned to the same position as the original. This is thought to cause local disappearance of plasma when the magnet unit is reciprocated in the Y-axis direction with a predetermined stroke length. Therefore, if it is possible to suppress the spreading of the circulating electrons in the peripheral region after changing the direction while suppressing the scattering of the circulating electrons in the central region after changing the direction to the substrate side to be processed, it is possible to suppress the spread of the circulating electrons in the X-axis during sputtering. We have found that it is possible to generate a racetrack-like plasma having a substantially symmetrical electron density distribution.

Japanese Patent Application Laid-Open No. 2008-127601

The present invention has been made based on the above findings, and is capable of making the erosion region of the target substantially uniform as the sputtering progresses without local disappearance of the plasma, thereby increasing the utilization efficiency of the target. It is an object of the present invention to provide a cathode unit for a magnetron sputtering apparatus and a magnetron sputtering apparatus capable of

In order to solve the above problems, a cathode unit for a magnetron sputtering apparatus of the present invention includes a magnet unit provided on the side opposite to the sputtering surface of a target arranged in a vacuum chamber, the magnet unit having a linear shape. and a peripheral magnet surrounding the central magnet, which has a central magnet arranged on both sides of the central magnet, straight portions extending parallel to each other at equal intervals, and bridging portions bridging both free ends of the straight portions, respectively. is provided by changing the polarity of the target side, and a magnetic field leaking from the sputtering surface is generated so that a line passing through the position where the vertical component of the magnetic field is zero extends along the longitudinal direction of the central magnet and closes in a racetrack shape, While the posture of the peripheral magnet is maintained, both end portions of the central magnet are shifted to different linear portions of the peripheral magnet according to the polarity of the central magnet on the target side.

According to this, when simulating the density distribution of orbiting electrons in the plasma, scattering of the orbiting electrons toward the substrate to be processed in the central region after the direction is changed is suppressed, and in addition, the direction is changed. Spreading of circulating electrons in the Y-axis direction in the subsequent peripheral region can also be suppressed. As a result, when the cathode unit of the present invention is assembled in a magnetron sputtering apparatus and plasma is generated as described above, a racetrack shape having a uniform electron density distribution and substantially symmetrical with respect to the X-axis extends substantially along the entire length of the magnet unit. plasma. In this case, the length of both ends of the central magnet to be shifted is appropriately set according to the length of the magnet unit in the X-axis direction, the distance between the sputtering surface and the substrate to be processed, and the power supplied to the target during sputtering. For example, it is set to be at least twice the distance between the two straight portions. At this time, if a configuration is adopted in which both end portions of the central magnet are shifted so that the distance between them and the straight line portion becomes smaller in stages as they go toward both ends of the central magnet, the peripheral region before and after changing the orientation can be used. can make the density difference of orbiting electrons at . Contrary to the above, it is also conceivable to fix the central magnet and shift both ends (and bridging portions) of both linear portions of the peripheral magnets in different directions with respect to the central magnet. Spreading of orbiting electrons in the peripheral region after changing direction cannot be suppressed.

In order to solve the above problems, a magnet unit is arranged below the target arranged facing the substrate to be processed in the vacuum chamber with the sputtering surface side of the target facing upward, a power source for supplying power to the target, The magnetron sputtering apparatus of the present invention, which is provided with a gas introducing means for introducing an inert gas into a vacuum chamber having a vacuum atmosphere, comprises a central magnet arranged linearly, and a magnet unit arranged parallel to and equidistantly on both sides of the central magnet. and a bridge portion bridging both free ends of the two straight portions. A driving means is further provided for reciprocating the magnet unit at least in the Y-axis direction with a predetermined stroke length, with the direction perpendicular to the X-axis direction and the direction from the central magnet to the straight line portion of the peripheral magnet as the Y-axis direction. By introducing an inert gas into the vacuum chamber and supplying power to the target, a racetrack-shaped plasma is generated in the space above the sputtering surface. In this case, an electron diffusion suppressing means for suppressing upward diffusion of electrons is provided.

In the present invention, while the posture of the peripheral magnet is maintained, both end portions of the central magnet are shifted to different linear portions of the peripheral magnet in accordance with the polarity of the central magnet on the target side to suppress electron divergence. You just have to configure the means. On the other hand, for example, a permanent magnet or an electromagnet is provided at a position in the vacuum chamber where the sputtered particles do not scatter or outside the vacuum chamber, and a magnetic field is applied, and when the direction is changed, the electrons tend to diverge upward (toward the substrate to be processed). may be trapped in the original trajectory.

FIG. 2 is a schematic partial cross-sectional view of a magnetron sputtering apparatus including the cathode unit of this embodiment. (a) is a partially omitted plan view of the magnet unit used in the cathode unit of the present embodiment, (b) is a diagram for explaining the density distribution of orbiting electrons in the plasma in the XY plane, and (c). 4 is a diagram for explaining the density distribution of orbiting electrons in plasma on the XZ plane; FIG. (a) is a diagram for explaining the density distribution of orbiting electrons in the plasma on the XY plane of the conventional magnet unit, and (b) is a diagram for explaining the density distribution of orbiting electrons in the plasma on the XZ plane. (a) is a diagram for explaining the density distribution of orbiting electrons in the plasma on the XY plane of another conventional magnet unit, and (b) is a diagram for explaining the density distribution of orbiting electrons in the plasma on the XZ plane.

Hereinafter, with reference to the drawings, the substrate to be processed is a large-area glass substrate (hereinafter referred to as "substrate Sw") used for manufacturing flat panel displays, and a plurality of targets having rectangular contours in one direction are provided. An embodiment of a cathode unit for a magnetron sputtering apparatus and a magnetron sputtering apparatus according to the present invention will be described by taking a so-called multi-target type magnetron sputtering apparatus arranged side by side at regular intervals as an example. In the following, terms indicating directions such as up and down refer to the direction from the sputtering surface of the target toward the substrate Sw with respect to FIG. 1, which is the installation posture of the magnetron sputtering apparatus SM. The direction is the X-axis direction, and the width direction of the central magnet orthogonal to the X-axis direction is the Y-axis direction.

Referring to FIG. 1, magnetron sputtering apparatus SM of this embodiment includes a vacuum chamber 1 defining a film forming chamber 11 . An exhaust port 12 is opened in the wall surface of the vacuum chamber 1, and an exhaust pipe 13 from a vacuum exhaust unit Pu composed of a rotary pump, a dry pump, a turbomolecular pump, etc. is connected to the exhaust port 12, and a film forming chamber is formed. 11 can be evacuated and maintained at a predetermined pressure (eg, 1×10 ⁻⁵ Pa).

Gas supply ports

21a and 21b are also provided on the wall surface of the vacuum chamber 1, and

gas pipes

23a and 23b having

mass flow controllers

22a and 22b are connected to the

gas supply ports

21a and 21b, respectively, to form a film. A rare gas (inert gas) such as argon gas whose flow rate is controlled into the chamber 11 and, if necessary, a reaction gas such as oxygen gas can be introduced. do.

A substrate transfer means 3 is provided in the upper space within the vacuum chamber 1 . The substrate transport means 3 includes a carrier 31 that holds the substrate Sw with its lower surface (film formation surface) open, and a drive source (not shown) capable of freely transporting the carrier 31 in the Y-axis direction. Note that a known device can be used as the substrate transfer means 3, so detailed description thereof will be omitted here. A cathode unit CU of the present embodiment is provided in the lower part of the vacuum chamber 1 so as to face the substrate Sw held by the carrier 31 transported to a predetermined position in the film forming chamber 11 . The cathode unit CU includes four targets ₄ ₁ to 4 ₄ arranged in parallel in the Y-axis direction at equal intervals so that the upper surface (sputtering surface) when not in use is positioned within the XY plane. and magnet units 5 ₁ to 5 ₄ respectively arranged in the lower space (outside the vacuum chamber) of 4 ₄ . Each of the targets 4 ₁ to 4 ₄ manufactured according to the composition of the film to be deposited on the lower surface of the substrate Sw has the same substantially rectangular parallelepiped shape and is arranged side by side when facing the substrate Sw. The dimensions (the length in the X-axis direction and the width in the Y-axis direction) of each of the targets 4 ₁ to 4 ₄ are set so that the outline of each of the targets 4 ₁ to 4 ₄ is one size larger than the substrate Sw. A backing plate 41 made of copper is bonded to the lower surface of each of the targets 4 ₁ to 4 ₄ via a bonding material (not shown) such as indium, so that the targets 4 ₁ to 4 ₄ can be cooled during sputtering. , is installed on the bottom surface of the vacuum chamber 1 via an insulator 42 . Adjacent targets 4 ₁ , 4 ₂ and 4 ₃ , 4 ₄ are paired, and each pair of targets 4 ₁ to 4 ₄ is connected to an output 61 from an AC power supply 6 as a power supply. AC power of a predetermined frequency (for example, 1 kHz to 100 kHz) can be applied between the targets 4 ₁ , 4 ₂ and 4 ₃ , 4 ₄ which are paired with each other. Depending on the target species, for example, DC power having a negative potential can be applied to each of the targets 4 ₁ to 4 ₄ .

Referring also to FIG. 2, each of the magnet units 5 ₁ to 5 ₄ has the same form, is provided parallel to the backing plate 41, and includes a support plate 51 (yoke) made of a flat plate made of a magnetic material. . At the center of the upper surface of the support plate 51, a central magnet 52 is linearly arranged in the X-axis direction, and

straight portions

53a and 53b extend parallel to each other at equal intervals on both sides of the central magnet 52, and both of the

straight portions

53a and 53b. The polarities of the target side of the peripheral magnet 53 surrounding the central magnet 52 are changed (for example, the central magnet 52 is the S pole and the peripheral magnet 53 is the N pole). Pole) prepare. In this case, the central magnet 52 and the peripheral magnets 53 are integrally made of a neodymium magnet or the like, or arranged by arranging magnet pieces of the neodymium magnet or the like. It is designed so that the volume when converted to magnetization is about the same. As a result, a line passing through the position where the vertical component of the magnetic field is zero is drawn in the X-axis direction in the space in the deposition chamber 11 between the upper surface (sputtering surface) of each of the targets 4 ₁ to 4 ₄ and the lower surface of the substrate Sw. A magnetic field Mf that leaks from the sputter surface that extends and closes like a racetrack is generated, respectively. A nut member 54 is protruded from the lower surface of the support plate 51 of each of the magnet units 5 ₁ to 5 ₄ , and a feed screw Fs connected to the motor Mt is screwed into each nut member 54 . , the magnet units 5 ₁ to 5 ₄ can be reciprocated in the Y-axis direction with a predetermined stroke length, and these constitute the drive means of this embodiment. It should be noted that each magnet unit 5 ₁ to 5 ₄ may be reciprocated in the X-axis direction with a predetermined stroke length.

When a film is formed on the lower surface of the substrate Sw using the magnetron sputtering apparatus SM, the substrate Sw is transported by the substrate transport means 3 to a predetermined position in the film deposition chamber 11 facing the targets 4 ₁ to 4 ₄ , The film forming chamber 11 is evacuated to a predetermined pressure. When the film forming chamber ₁₁ reaches _a predetermined pressure, a rare gas (reactant gas if necessary) is introduced while controlling the flow rate by the

mass flow controllers

22a and 22b. AC power is supplied between Then, a racetrack-shaped plasma PL is generated above the sputtering surface of each of the targets 4 ₁ to 4 ₄ . At this time, the electrons in the plasma PL are bent by the electromagnetic field at both ends of each of the magnet units 5 ₁ to 5 ₄ in the X-axis direction, and change their directions according to the magnetism of the upper side of the central magnet 52 and the peripheral magnet 53. Move in a clockwise or counterclockwise orbit around the racetrack. Then, the sputtering surface is sputtered by rare gas ions ionized by the plasma PL, and sputtered particles scattered from the sputtering surface adhere to and accumulate on the lower surface of the substrate Sw in accordance with a predetermined cosine law to form a film. At this time, each of the targets 4 ₁ to 4 ₄ is eroded substantially uniformly in the Y-axis direction by integrally reciprocating the magnet units 5 ₁ to 5 ₄ with a predetermined stroke length in the Y-axis direction.

Here, as shown in FIG. 3(a),

straight portions

530a and 530b extending parallel to each other at equal intervals on both sides of the central magnet 520 provided on the support plate 510 and both free ends of the

straight portions

530a and 530b are respectively A conventional magnet unit having a bridging portion 530c is referred to as an initial magnet unit Mu1. Further, as shown in FIG. 4(a),

linear portions

531a and 531b extending parallel to each other at equal intervals on both sides of a central magnet 521 provided on the support plate 511, and both free ends of the

linear portions

531a and 531b are bridged. With the magnet unit having the bridging portion 531c as a reference, one of the linear portions 531a and both ends of the central magnet 521 are moved toward the other linear portion 531b to , 531b is defined as a correction magnet unit Mu2. In addition, as indicated by the dashed line in FIG. 1, in the racetrack-shaped plasma PL generated in the space between the sputtering surface and the substrate Sw, the region near the central magnet 521 is the central region Pc, and the region in the opposite direction is Pc. The areas are assumed to be peripheral areas Pp1 and Pp2. When simulating the trajectory and density distribution of orbiting electrons in the plasma PL, in the initial magnet unit Mu1, as shown in FIGS. ), the density of orbiting electrons in the peripheral region Pp1 before being bent by the electromagnetic field and changing direction is locally high, while the density of orbiting electrons in the peripheral region Pp2 after changing direction is locally low. Become. Also, looking at the trajectory of the orbiting electrons on the XZ plane, the orbiting electrons scatter upward in the Z-axis direction in the central region Pc after the orientation is changed. 2 to 4, the orbits of the orbiting electrons are represented by thin curves, and the density of the orbiting electrons on the orbits is indicated by shading.

In the correction magnet unit Mu2, as shown in FIGS. 4(a) and 4(b), on the XY plane, there is not much difference in circulating electron density between the peripheral regions Pp1 and Pp2 before and after the orientation is changed. , scattering of circulating electrons toward the substrate Sw side in the central region Pc after changing direction is suppressed more than in the initial magnet unit Mu1 (in other words, they are trapped by the leakage magnetic field Mf). On the other hand, after the orientation is changed, a predetermined length range Lp (the interval between the central magnet 521 and the

straight portions

531a and 531b is the same as that of the central region) toward the inside adjacent to each of the longitudinal ends. ), the density of circulating electrons in the peripheral region Pp2 increases and spreads in the Y-axis direction. It is considered that this causes local disappearance of the plasma when the correction magnet unit Mu2 is reciprocated in the Y-axis direction with a predetermined stroke length.

In each of the magnet units 5 ₁ to 5 ₄ of the present embodiment, as shown in FIG. 2(a), while maintaining the attitude of the peripheral magnet 53, according to the polarity of the central magnet 52 on the target side (in other words, A configuration is employed in which both end

portions

52a and 52b of the central magnet 52 are shifted to different

linear portions

53a and 53b of the peripheral magnet 53, respectively, depending on the direction in which the electrons circulate. In this case, the length L1 of both

end portions

52a and 52b of the central magnet 52 to be shifted is the length of the magnet units 51 to ₅₄ in the X _- axis direction, the distance between the sputtering surface and the substrate Sw, and the target during sputtering. It is appropriately set according to the power supplied to 4 ₁ to 4 ₄ and the like, and for example, it is set to be at least twice the distance L2 between the

straight portions

53a and 53b. At this time, both

end portions

52a and 52b of the central magnet 52 can be shifted (stepwise) so that the distance between them and the

linear portions

53a and 53b becomes smaller step by step toward the central magnet end. On the other hand, as both

end portions

52a and 52b of the central magnet 52 move toward the ends of the central magnet, the distance between them and the

linear portions

53a and 53b can be shifted so as to continuously decrease (for example, the Both

end portions

52a and 52b are installed at an angle with respect to the X-axis direction).

When the magnet units 5 ₁ to 5 ₄ of this embodiment are used to simulate the trajectory and density distribution of orbiting electrons in the plasma PL, as shown in FIGS. There is not much difference in the density of circulating electrons in the peripheral regions Pp1 and Pp2 before and after the change. It has been confirmed that it is more suppressed than Mu2 (in other words, it is trapped by the leakage magnetic field Mf). Moreover, it was confirmed that even after the orientation was changed, the density of the orbiting electrons in the peripheral region Pp2 was the same as in the other regions and did not spread in the Y-axis direction. As a result, the configuration in which both end

portions

52a and 52b of the central magnet 52 are shifted toward the different

linear portions

53a and 53b of the peripheral magnet 53 serves as an electron divergence suppressing means for suppressing upward divergence of circulating electrons. I understand.

According to this embodiment, it is possible to form a racetrack-shaped plasma PL having an electron density distribution that is substantially symmetrical with respect to the X-axis over substantially the entire length of the magnet units 5 ₁ to 5 ₄ . Therefore, when a predetermined thin film is formed on the substrate Sw using the magnetron sputtering apparatus SM provided with the magnet units 5 ₁ to 5 ₄ , the film can be formed with a good distribution of film thickness and film quality over the entire surface. Moreover, since the stroke length of the reciprocating motion in the Y-axis direction by the drive means Mt and Fs can be set long, the utilization efficiency of each of the targets 4 ₁ to 4 ₄ can be improved. In addition, although not shown and explained, the central magnet 52 is fixed, and both ends (and bridging portions) of the

straight portions

53a and 53b of the peripheral magnet 53 are connected to the central magnet 52. Shifting in a different direction is also conceivable, but it has been confirmed that this cannot suppress the spread of orbiting electrons in the peripheral region after the direction is changed.

Although the embodiment of the present invention has been described above, various modifications are possible without departing from the scope of the technical idea of the present invention. In the above embodiment, the electron divergence suppressing means is configured by shifting both

end portions

52a and 52b of the central magnet 52 toward the different

straight portions

53a and 53b of the peripheral magnet 53, respectively. It is not limited to this as long as it can suppress scattering of circulating electrons to the substrate Sw side in the central region Pc after the above. Although not shown and described, for example, a permanent magnet or an electromagnet is provided at a position in the vacuum chamber 1 where the sputtered particles do not scatter or outside the vacuum chamber 1 to apply a magnetic field, and when the direction is changed, the direction is changed upward (to the substrate side). ) may be trapped in their original trajectories.

In the above embodiment, a so-called multi-target type magnetron sputtering apparatus SM in which a plurality of targets 4 ₁ to 4 ₄ are arranged side by side at regular intervals has been described as an example, but the present invention is not limited to this. The present invention can also be applied to a magnetron sputtering apparatus in which a single magnet unit is arranged on a single target, or a so-called multi-magnet type magnetron sputtering apparatus in which a plurality of magnet units are arranged side by side at equal intervals for a single target. can be applied.

SM... magnetron sputtering apparatus, CU... cathode unit, 1... vacuum chamber, 21a, 21b... gas supply ports (components of gas introduction means), 22a, 22b... mass flow controllers (components of gas introduction means), 23a, 23b ... gas pipe (component of gas introducing means) 4 ₁ - 4 ₄ ... target 5 ₁ - 5 ₄ ... magnet unit 52 ...

central magnet

52a, 52b ... both ends of central magnet 52 (electron diffusion suppressing means) , 53

Peripheral magnets

53a, 53b Linear portion 53c Bridging portion Mf Magnetic field 6 AC power source (power source) Mt Motor (component of drive means) Fs Feed screw (structure of drive means element), 54 ... nut member (constituent element of the driving means).

Claims

A magnet unit is provided on the side opposite to the sputtering surface of the target placed in the vacuum chamber, and the magnet unit includes a central magnet arranged linearly and extending parallel to and at equal intervals on both sides of the central magnet. A peripheral magnet that surrounds the central magnet and has a straight portion and a bridging portion that bridges both free ends of both straight portions is provided with the polarity of the target side changed, and a position where the vertical component of the magnetic field is zero is provided. A cathode unit for a magnetron sputtering apparatus that generates a magnetic field that leaks from the sputtering surface so that a line passing through it extends along the longitudinal direction of the central magnet and closes like a racetrack,
A magnetron sputtering apparatus characterized in that, while maintaining the posture of the peripheral magnet, both end portions of the central magnet are shifted to different linear portions of the peripheral magnet according to the polarity of the central magnet on the target side. Cathode unit for
2. The magnetron sputtering apparatus according to claim 1, wherein the both end portions of said central magnet are shifted so that the distance between them and said straight portion becomes smaller stepwise toward both ends of said central magnet. cathode unit.
A magnet unit arranged below the target facing the substrate to be processed in the vacuum chamber with the sputtering surface side of the target facing upward, a power source for supplying power to the target, and an inert gas being supplied to the vacuum chamber having a vacuum atmosphere. A magnetron sputtering apparatus comprising a gas introducing means for introducing,
The magnet unit has a central magnet arranged linearly, straight portions extending parallel to each other at equal intervals on both sides of the central magnet, and bridging portions bridging both free ends of the straight portions. A peripheral magnet that surrounds the periphery is provided with the polarity of the target side changed, the longitudinal direction of the central magnet is the X-axis direction, the width direction of the central magnet is the Y-axis direction orthogonal to the X-axis direction, and the magnet unit is moved with a predetermined stroke length. In the device further provided with a drive means for reciprocating at least in the Y-axis direction,
By introducing an inert gas into a vacuum chamber with a vacuum atmosphere and supplying power to the target, a racetrack-shaped plasma is generated in the space above the sputtering surface. 1. A magnetron sputtering apparatus, comprising an electron diffusion suppressing means for suppressing upward diffusion of electrons when the direction of the magnetron is changed.
While maintaining the posture of the peripheral magnet, the electron divergence suppressing means is constructed by shifting both end portions of the central magnet toward different linear portions of the peripheral magnet in accordance with the polarity of the central magnet on the target side. 4. The magnetron sputtering apparatus according to claim 3, characterized by: