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WO2022121226A1 - 一种变压器 - Google Patents

一种变压器 Download PDF

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Publication number
WO2022121226A1
WO2022121226A1 PCT/CN2021/091835 CN2021091835W WO2022121226A1 WO 2022121226 A1 WO2022121226 A1 WO 2022121226A1 CN 2021091835 W CN2021091835 W CN 2021091835W WO 2022121226 A1 WO2022121226 A1 WO 2022121226A1
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WO
WIPO (PCT)
Prior art keywords
transformer
winding
converter
auxiliary
body winding
Prior art date
Application number
PCT/CN2021/091835
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English (en)
French (fr)
Inventor
蔡国庆
庄加才
徐君
刘威
Original Assignee
阳光电源股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 阳光电源股份有限公司 filed Critical 阳光电源股份有限公司
Priority to AU2021394083A priority Critical patent/AU2021394083B2/en
Priority to JP2022562329A priority patent/JP7556045B2/ja
Priority to US18/037,518 priority patent/US20240021358A1/en
Priority to EP21901941.1A priority patent/EP4258303A4/en
Publication of WO2022121226A1 publication Critical patent/WO2022121226A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/32—Insulating of coils, windings, or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/29—Terminals; Tapping arrangements for signal inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/30—Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
    • H01F27/306—Fastening or mounting coils or windings on core, casing or other support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/32—Insulating of coils, windings, or parts thereof
    • H01F27/323—Insulation between winding turns, between winding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/38—Auxiliary core members; Auxiliary coils or windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/42—Circuits specially adapted for the purpose of modifying, or compensating for, electric characteristics of transformers, reactors, or choke coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/32—Insulating of coils, windings, or parts thereof
    • H01F2027/329—Insulation with semiconducting layer, e.g. to reduce corona effect
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33561—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having more than one ouput with independent control

Definitions

  • the invention relates to the technical field of power transmission and distribution, in particular to a transformer.
  • transformer windings are often wound with litz wires.
  • Fig. 1 shows an implementation of setting a semiconducting layer in a high-voltage power frequency transformer in the prior art.
  • one semiconducting layer corresponds to one winding, and the semiconducting layer is usually directly related to the specified winding position for equipotential bonding.
  • the invention provides a transformer, which provides a preset connection point with the same potential as the preset position of the transformer body winding through an auxiliary circuit, and the semi-conductive layer is directly connected with the preset connection point, so as to avoid damage to the insulation between the litz wires.
  • the intended function of the semiconducting layer is realized: improving the electric field distribution of the winding and preventing the local electric field strength of the transformer from being too high.
  • the present invention provides a transformer, comprising: an iron core, a body winding, and a semiconducting layer, wherein,
  • the body winding is sleeved on the core column of the iron core
  • the semiconducting layer is arranged corresponding to the body winding
  • the equipotential bonding point of the semiconducting layer is provided by the auxiliary circuit
  • the auxiliary circuit is connected to the body winding, and the auxiliary circuit and the preset position of the body winding have the same potential.
  • the equipotential connection point provided by the auxiliary circuit is a connection point that minimizes the internal current in the semiconducting layer.
  • the auxiliary circuit includes an auxiliary winding sleeved on the core column.
  • the auxiliary winding and the body winding have the same winding direction and the same number of turns.
  • the auxiliary circuit includes a converter connected to the transformer.
  • the positive bus bar of the DC side of the converter is used as the equipotential connection point.
  • the DC side negative bus of the converter is used as the equipotential connection point.
  • the midpoint of the DC side bus of the converter is used as the equipotential connection point.
  • the auxiliary circuit includes: a converter and an auxiliary winding, wherein,
  • the DC side bus of the converter provides the equipotential bonding point
  • the N semiconducting layers in the transformer are connected to the DC side busbars of the corresponding converters, wherein N ⁇ 1;
  • the M semiconducting layers in the transformer are connected to the equipotential bonding points of the corresponding auxiliary windings, wherein M ⁇ 1.
  • the transformer provided in any of the above-mentioned first aspect of the present invention further includes: a capacitive current suppression circuit, wherein,
  • the capacitive current suppression circuit is connected in series between the equipotential connection point provided by the auxiliary circuit and the semiconducting layer.
  • the capacitive current suppression circuit includes any one of a resistor and an inductor.
  • the capacitive current suppression circuit includes a resistor and an inductor connected in series.
  • the present invention provides an isolation converter, comprising: a first converter, a second converter, and the transformer according to any one of the first aspects of the present invention, wherein,
  • the first converter is connected to the body winding on the primary side of the transformer
  • the second converter is connected to the body winding on the secondary side of the transformer.
  • the transformer provided by the invention includes an iron core, a body winding, and a semiconducting layer, the body winding is sleeved on the core column of the iron core, and the semiconducting layer is correspondingly arranged with the body winding.
  • the auxiliary circuit is connected to the main body winding, and the preset position of the auxiliary circuit and the main body winding has the same potential.
  • the equipotential connection point of the semi-conductive layer is provided by the auxiliary circuit. After the semi-conductive layer is connected to the auxiliary circuit, the electric field distribution of the winding can be balanced. effect.
  • an equipotential connection point with the same potential as the preset position of the transformer body winding is provided through the auxiliary circuit, and the semiconductive layer is directly connected with the equipotential connection point, so as to avoid damaging the insulation between the litz wires. It can realize the predetermined function of the semi-conductive layer, that is, to improve the electric field distribution of the winding and improve the high-voltage insulation performance of the transformer.
  • Fig. 1 is the structural representation that the semi-conductive layer is arranged in the high-voltage power frequency transformer in the prior art
  • FIG. 2 is a schematic structural diagram of a first transformer provided by an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a second type of transformer provided by an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a third transformer provided by an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a fourth transformer provided by an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a fifth transformer provided by an embodiment of the present invention.
  • FIG. 7 is a schematic structural diagram of a sixth transformer provided by an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of a capacitive current flow path of a semiconducting layer in a transformer provided by an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of a seventh transformer provided by an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a first transformer provided by an embodiment of the present invention.
  • the transformer provided by an embodiment of the present invention includes an iron core, a body winding, and a semiconductive layer.
  • the transformer provided by the embodiment of the present invention includes a plurality of body windings, that is, body winding 1 , body winding 2 . . . body winding n shown in FIG. 2 .
  • the body winding can be further divided into a primary side winding and a secondary side winding, and specific reference may be made to the prior art, which will not be described in detail here.
  • the body winding of the transformer is sleeved on the core column of the iron core. It is conceivable that for a three-phase transformer, the core column mentioned in this embodiment should include the core columns corresponding to the three phases a, b, and c.
  • the body winding also needs to be divided into three phases a, b, and c, which are respectively fitted on the corresponding iron core legs.
  • semiconducting layers are arranged corresponding to the body windings. It is conceivable that, in most cases, for any phase of the transformer, the primary winding and the secondary winding are concentrically sleeved on the core column. Based on this structure, the primary winding and the secondary winding of the transformer can be installed. The surfaces of the secondary side windings are respectively provided with semiconducting layers correspondingly. Of course, according to actual design requirements, the semiconductive layers may also be provided at the two aforementioned positions at the same time.
  • the equipotential connection points of the semiconducting layers provided corresponding to the body windings are provided by the auxiliary circuit.
  • the auxiliary circuit is connected with the body winding, and the preset position of the auxiliary circuit and the body winding has the same potential.
  • connection point between the auxiliary circuit and the main body winding should be selected from the lead connection point of the main body winding, such as the lead wire of the main body winding.
  • the connection points are connected, and naturally the insulation of the inner turns of the body winding will not be damaged.
  • the inter-strand insulation between the litz wires is also not destroyed.
  • the auxiliary circuit is arranged between the semiconducting layer and the main body winding, and the semiconducting layer and the auxiliary circuit are directly connected.
  • the preset position has the same potential. From the effect point of view, the connection of the semiconductive layer to the auxiliary circuit can be equivalent to the direct connection of the semiconductive layer to the body winding in the prior art, and the effect of the semiconductive layer to improve the electric field distribution is not affected.
  • the equipotential connection point provided by the auxiliary circuit should preferably be the connection point that minimizes the capacitive current in the semiconducting layer, so as to avoid the semiconducting layer caused by excessive capacitive current as much as possible, and The problem of heating of the connecting wires connecting the semiconducting layer and the auxiliary circuit.
  • the transformer provided by the present invention provides an equipotential connection point with the same potential as the preset position of the transformer body winding through the auxiliary circuit, and the semiconductive layer is directly connected with the equipotential connection point, so as to avoid damaging the litz line.
  • the intended role of the semiconducting layer is realized, that is, the electric field distribution of the winding is improved, and the high-voltage insulation performance of the transformer is improved.
  • FIG. 3 is a schematic structural diagram of a second type of transformer provided by an embodiment of the present invention.
  • the auxiliary circuit is realized by auxiliary windings.
  • the auxiliary winding provided in this embodiment is wound together with the body winding. Therefore, in this embodiment, the auxiliary winding and the body winding are wound in the same direction, and the number of turns is different. The same, and the same sleeve on the stem of the iron core.
  • the auxiliary winding and the main body winding are in a parallel relationship, and the voltage across the auxiliary winding is exactly the same as the voltage value and voltage drop direction at both ends of the main body winding. Further, when the auxiliary winding and the body winding are wound at the same time, the number of turns of the auxiliary winding and the body winding is the same, and the induced voltage of each turn of the auxiliary winding is the same as the induced voltage of each turn of the body winding. Each potential of the winding is exactly the same as the potential of the corresponding position of the main winding. Therefore, each point of the auxiliary winding can be used as the equipotential connection point of the semiconducting layer.
  • the coupling situation can be arbitrarily configured.
  • the transformer includes a plurality of body windings, correspondingly, it is necessary to provide an auxiliary winding for each body winding provided with a semi-conductive layer, and the outlet end of each auxiliary winding corresponds to the corresponding one.
  • the outgoing connection points of the body windings can be connected.
  • the auxiliary winding can be made of a very thin insulated wire, which is wound together with the litz wire that winds the body winding, and the process is not difficult to achieve.
  • converters are often connected to the primary side and the secondary side of the high-frequency high-voltage transformer, and AC-DC conversion is realized through the converter.
  • There is a DC potential on the DC side of the converter therefore, as an optional implementation, the equipotential bonding point of the semiconducting layer can be provided by the converter connected to the transformer.
  • FIG. 4 an implementation manner of using a converter as an auxiliary circuit to provide an equipotential connection point is respectively shown.
  • the DC side positive bus of the converter is used as the equipotential connection point; correspondingly, in the embodiment shown in FIG. 5 , the DC side negative bus of the converter is used as the equipotential connection point.
  • the midpoint of the busbar of the converter can also be used as the equipotential connection point, and the specific connection relationship is shown in Figure 6.
  • the auxiliary circuit is realized by a converter, and the structure of the transformer itself does not need to be improved, and the wiring is simple. Compared with the embodiment shown in FIG. 3 , it is easier to realize . Of course, the disadvantage is that it can only be used in application scenarios with converters.
  • FIG. 7 is a schematic structural diagram of a sixth type of transformer provided by an embodiment of the present invention.
  • the auxiliary circuit is implemented based on the converter and the auxiliary winding, that is, the DC side of the converter is implemented.
  • the busbars and auxiliary windings respectively provide equipotential bonding points.
  • the N semiconducting layers in the transformer are connected to the DC side busbars of the corresponding converters, where N ⁇ 1; the M semiconducting layers in the transformer are connected to the equipotential bonding points of the corresponding auxiliary windings , where M ⁇ 1. It is conceivable that the sum of N and M is the total number of body windings included in the transformer.
  • N and M in the above embodiment should be selected in combination with the specific application scenario of the transformer, especially the set number of the converters in the application scenario.
  • the equipotential connection point connecting the semiconducting layer should be selected according to the coupling between the semiconducting layer and the body winding.
  • the voltage jumps on both sides of the center point of the transformer body winding are opposite. If the semiconducting layer is connected to the midpoint of the busbar, it is equivalent to connecting the center point of the transformer body winding. If the coupling is also symmetrical, the capacitive current flowing through is the same in magnitude and opposite in direction, so that the total capacitive current flowing on the equipotential wiring of the semiconducting layer is the smallest, and the impact on the busbar is also the smallest.
  • the capacitive current in the semiconducting layer can be made zero in theory, but in practical applications, the ideal equipotential bonding point is difficult to accurately determine, especially for Depending on the implementation of the equipotential bonding point provided by the converter, the optional position of the equipotential bonding point that the converter can provide is limited, making it more difficult to make the capacitive current zero.
  • Fig. 9 is a schematic structural diagram of a seventh transformer provided by an embodiment of the present invention.
  • the transformer provided in this embodiment further includes: a capacitive current suppression circuit.
  • the capacitive current suppression circuit is connected in series between the equipotential connection point provided by the auxiliary circuit and the semiconducting layer.
  • the specific number of capacitive current suppression circuits should also be determined in combination with the size of the capacitive current in the semiconducting layer corresponding to each body winding of the transformer.
  • a semiconducting layer can be set Capacitive Current Suppression Circuit.
  • a capacitive current suppression circuit is arranged between the semiconductive layer and the auxiliary circuit, and the capacitive current is limited by the capacitive current suppression circuit, so as to prevent the semiconductive layer from being caused by excessive capacitive current.
  • the capacitive current suppression circuit can be implemented by any one of resistance and inductance.
  • a capacitive current suppression circuit implemented purely through an inductance its impedance to high-frequency signals is relatively large, which can effectively suppress high-frequency capacitive currents.
  • the impedance is low and the inductive partial pressure is small, which can ensure that the semiconducting layer provides an effective equipotential.
  • the capacitive current suppression circuit can also be implemented by a resistor and an inductor connected in series.
  • the present invention further provides an isolation converter, including: a first converter, a second converter, and the transformer provided in any of the foregoing embodiments, wherein,
  • the first converter is connected to the body winding on the primary side of the transformer
  • the second converter is connected to the body winding on the secondary side of the transformer.
  • a software module can be placed in random access memory (RAM), internal memory, read only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other in the technical field. in any other known form of storage medium.
  • RAM random access memory
  • ROM read only memory
  • electrically programmable ROM electrically erasable programmable ROM
  • registers hard disk, removable disk, CD-ROM, or any other in the technical field. in any other known form of storage medium.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Coils Of Transformers For General Uses (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Insulating Of Coils (AREA)
  • Regulation Of General Use Transformers (AREA)

Abstract

本发明提供的变压器，应用于输配电技术领域，该变压器包括铁芯、本体绕组，以及半导电层，本体绕组套装于铁芯的芯柱之上，半导电层与本体绕组对应设置。辅助电路与本体绕组相连，且辅助电路与本体绕组的预设位置具有相等电位，半导电层的等电位连接点由辅助电路提供，半导电层与辅助电路连接后，即可实现均衡绕组电场分布的作用。本发明提供的变压器，通过辅助电路提供与变压器本体绕组的预设位置具有相等电位的等电位连接点，半导电层直接与该等电位连接点相连，从而在避免破坏l itz线股间绝缘的情况下，实现半导电层的既定作用，即改善绕组的电场分布，提高变压器的高压绝缘性能。

Description

一种变压器
本申请要求于2020年12月07日提交中国专利局、申请号为202011438258.1、发明名称为“一种变压器”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及输配电技术领域，特别涉及一种变压器。
背景技术
在实际应用中，不但需要关注高频高压大功率变压器的高频特性，同时，还应关注此类变压器的高压特性。具体的，针对高频高压大功率变压器的高频特性，为了防止集肤效应与邻近效应带来的高频涡流损耗，常采用litz线绕制变压器绕组。而针对高频高压大功率变压器的高压特性，通常需要用到半导电层改善绕组的电场分布，以防止变压器的局部场强过高。
参见图1，图1中示出现有技术中在高压工频变压器设置半导电层的实现方式，在大多数情况下，一个半导电层对应一个绕组，半导电层通常直接与对应的绕组的指定位置进行等电位连接。
然而，高频高压大功率变压器难以采用图1所示的实现方式，原因在于，高频高压大功率变压器的绕组采用litz线绕制，由于litz线包括多股相互之间绝缘的导线，难以在不破坏litz线股间绝缘的前提下，引出与半导电层相连的连接点，而如果破坏了litz线的股间绝缘，则会导致绝缘破损处的高频涡流损耗带来的发热问题。
发明内容
本发明提供一种变压器，通过辅助电路提供与变压器本体绕组的预设位置具有相等电位的预设连接点，半导电层直接与该预设连接点相连，从而在避免破坏litz线股间绝缘的情况下，实现半导电层的既定作用：改善绕组的电场分布，防止变压器的局部场强过高。
为实现上述目的，本发明提供的技术方案如下：
第一方面，本发明提供一种变压器，包括：铁芯、本体绕组，以及半导电层，其中，
所述本体绕组套装于所述铁芯的芯柱；
所述半导电层与所述本体绕组对应设置；
所述半导电层的等电位连接点由辅助电路提供；
所述辅助电路与所述本体绕组相连，且所述辅助电路与所述本体绕组的预设位置具有相等电位。
可选的，所述辅助电路提供的等电位连接点为使所述半导电层内容性电流最小的连接点。
可选的，所述辅助电路包括套装于所述芯柱的辅助绕组。
可选的，所述辅助绕组与所述本体绕组的绕向相同，且匝数相同。
可选的，所述辅助电路包括与所述变压器相连的变流器。
可选的，所述变流器的直流侧正母线作为所述等电位连接点。
可选的，所述变流器的直流侧负母线作为所述等电位连接点。
可选的，所述变流器的直流侧母线中点作为所述等电位连接点。
可选的，所述辅助电路包括：变流器和辅助绕组，其中，
所述变流器的直流侧母线提供所述等电位连接点；
所述变压器中的N个所述半导电层与相应的变流器的直流侧母线相连，其中，N≥1；
所述变压器中的M个所述半导电层与相应的辅助绕组的等电位连接点相连，其中，M≥1。
可选的，本发明第一方面上述任一项提供的变压器，还包括：容性电流抑制电路，其中，
所述容性电流抑制电路串联于所述辅助电路提供的等电位连接点与所述半导电层之间。
可选的，所述容性电流抑制电路包括电阻和电感中的任意一种。
可选的，所述容性电流抑制电路包括串联连接的电阻和电感。
第二方面，本发明提供一种隔离变流器，包括：第一变流器、第二变流器， 以及本发明第一方面任一项所述的变压器，其中，
所述第一变流器与所述变压器一次侧的本体绕组相连；
所述第二变流器与所述变压器二次侧的本体绕组相连。
本发明提供的变压器，包括铁芯、本体绕组，以及半导电层，本体绕组套装于铁芯的芯柱之上，半导电层与本体绕组对应设置。辅助电路与本体绕组相连，且辅助电路与本体绕组的预设位置具有相等电位，半导电层的等电位连接点由辅助电路提供，半导电层与辅助电路连接后，即可实现均衡绕组电场分布的作用。本发明提供的变压器，通过辅助电路提供与变压器本体绕组的预设位置具有相等电位的等电位连接点，半导电层直接与该等电位连接点相连，从而在避免破坏litz线股间绝缘的情况下，实现半导电层的既定作用，即改善绕组的电场分布，提高变压器的高压绝缘性能。
附图说明
为了更清楚地说明本发明实施例或现有技术内的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述内的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中高压工频变压器设置半导电层的结构示意图；
图2是本发明实施例提供的第一种变压器的结构示意图；
图3是本发明实施例提供的第二种变压器的结构示意图；
图4是本发明实施例提供的第三种变压器的结构示意图；
图5是本发明实施例提供的第四种变压器的结构示意图；
图6是本发明实施例提供的第五种变压器的结构示意图；
图7是本发明实施例提供的第六种变压器的结构示意图；
图8是本发明实施例提供的变压器中半导电层容性电流流通路径示意图；
图9是本发明实施例提供的第七种变压器的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
参见图2，图2是本发明实施例提供的第一种变压器的结构示意图，本发明实施例提供的变压器包括铁芯、本体绕组，以及半导电层。
结合实际应用中的变压器结构，本发明实施例提供的变压器包括多个本体绕组，即图2中所示出的本体绕组1、本体绕组2……本体绕组n。当然，本体绕组可以进一步划分为一次侧绕组和二次侧绕组，具体可以参照现有技术，此处不再详述。变压器的本体绕组套装于铁芯的芯柱上，可以想到的是，对于三相变压器而言，本实施例中述及的芯柱，应该包括a、b、c三相对应的芯柱，各个本体绕组同样需要划分为a、b、c三相，并分别套装在对应的铁芯芯柱之上。
进一步的半导电层与本体绕组对应设置。可以想到的是，在大多数情况下，对于变压器的任意一相而言，一次侧绕组和二次侧绕组呈同心式套装在芯柱上，基于此种结构，可以在变压器的一次侧绕组和二次侧绕组表面分别对应设置半导电层。当然，根据实际设计需要，还可以在前述这两个位置处同时设置半导电层。
需要说明的是，本发明各个附图中所给出的结构示意图中体现的本体绕组、铁芯，以及半导电层之间的位置关系，仅仅是为了便于说明本发明实施例以及后续各个实施例中辅助电路与本体绕组与半导电层之间的连接关系，不作为对变压器产品结构的直接限定。并且，对于变压器的具体构成、各构成部分之间的安装结果，以及半导电层的设置，均可以参照现有技术实现，本发明对此不做限定。
重要的是，在本发明实施例以及后续各个实施例提供的变压器中，与本体绕组对应设置的半导电层的等电位连接点由辅助电路提供。辅助电路与本体绕组相连，且辅助电路与本体绕组的预设位置具有相等电位。
当然，辅助电路与本体绕组的连接点应选择本体绕组的引出连接点，比如本体绕组的引出线，由于本体绕组的引出线是专门用于本体绕组连接外部电路的，辅助电路与本体绕组的引出连接点相连，自然不会破坏本体绕组内部线匝的绝缘。对于使用litz线绕制的本体绕组而言，同样不会破坏litz各股线之间的股间绝缘。
根据上述辅助电路、半导电层，以及本体绕组之间的连接关系可以看出，在半导电层与本体绕组之间设置辅助电路，半导电层与辅助电路直接相连，由于辅助电路与本体绕组的预设位置具有相等电位，从效果方面来看，半导电层与辅助电路相连可以等同于现有技术中半导电层直接与本体绕组相连，半导电层改善电场分布的作用并未受到影响。
可选的，在实际应用中，辅助电路提供的等电位连接点，应优选使半导电层内容性电流最小的连接点，从而尽可能的避免由于容性电流过大引起的半导电层、以及连接半导电层和辅助电路的连接线发热的问题。
综上所述，本发明提供的变压器，通过辅助电路提供与变压器本体绕组的预设位置具有相等电位的等电位连接点，半导电层直接与该等电位连接点相连，从而在避免破坏litz线股间绝缘的情况下，实现半导电层的既定作用，即改善绕组的电场分布，提高变压器的高压绝缘性能。
下面结合多个实施例以及相对应的附图，对辅助电路的可选实现方式进行介绍：
参见图3，图3是本发明实施例提供的第二种变压器的结构示意图。在本实施例中，辅助电路由辅助绕组实现。
可选的，作为一种实际生产中最易于实现的设置方式，本实施例提供的辅助绕组与本体绕组共同绕制，因此，本实施例中辅助绕组与本体绕组的绕向相同，而且匝数相同，并且同样套装于铁芯的芯柱上。
基于上述连接方式，辅助绕组与本体绕组处于并联关系，辅助绕组两端的电压与本体绕组两端的电压值以及压降方向完全相同。进一步的，在辅助绕组 与本体绕组同时绕制的情况下，辅助绕组与本体绕组的匝数相同，辅助绕组每一匝的感应电压与本体绕组的每一匝的感应电压都是相同的，辅助绕组每一处电位与本体绕组对应位置的电位也完全相同，因此，辅助绕组的每一点，均可以作为半导电层的等电位连接点，在实际应用中，可以根据半导电层与本体绕组的耦合情况任意配置。
可以想到的是，对于变压器整体而言，其包括有多个本体绕组，相应的，需要为每一设置有半导电层的本体绕组，对应设置一辅助绕组，各辅助绕组的出线端与相应的本体绕组的引出连接点相连即可。在实际生产中，辅助绕组可以采用很细的绝缘导线，随绕制本体绕组的litz线一同绕制，工艺实现难度不大。
当然，尽管实现工艺难度不大，在变压器设计过程中，还是要考虑辅助绕组的分流导致的线材发热问题，以及加工工艺、对变压器体积、绝缘性能等方面的影响，此处不再赘述。
可选的，在实际应用中，高频高压变压器的一次侧和二次侧往往都连接有变流器，通过变流器实现交直流的转换。变流器的直流侧存在直流电位，因此，作为一种可选的实现方式，半导电层的等电位连接点可以由与变压器相连的变流器提供。
可选的，参见图4、图5，以及图6所示实施例，分别示出将变流器作为辅助电路，提供等电位连接点的实现方式。
具体的，在图4所示实施例中，变流器的直流侧正母线作为等电位连接点；相应的，在图5所示实施例中，变流器的直流侧负母线作为等电位连接点。对于包括母线中点的变流器而言，变流器的母线中点同样可以作为等电位连接点，具体连接关系如图6所示。
在图4、图5以及图6所示实施例中，辅助电路由变流器实现，不需对变压器自身的结构进行改进，而且接线简单，与图3所示实施例相比，更易于实现。当然，其弊端就在于只能应用于设置有变流器的应用场景中。
当然，还可以结合实际应用场景，综合使用上述两种辅助电路的实现方式，特别是仅在变压器的一侧设置有变流器的应用场景中，综合应用上述两种实现方式，可以最大限度的降低变压器生成过程的难度。
可选的，参见图7，图7是本发明实施例提供的第六种变压器的结构示意图，在本实施例中，辅助电路基于变流器和辅助绕组共同实现，即变流器的直流侧母线以及辅助绕组分别提供等电位连接点。
在实际应用中，变压器中的N个半导电层与相应的变流器的直流侧母线相连，其中，N≥1；变压器中的M个半导电层与相应的辅助绕组的等电位连接点相连，其中，M≥1。可以想到的是，N和M的和，即为变压器所包括的全部本体绕组的数量。
需要说明的是，对于上述实施例中N和M的具体取值，应结合变压器的具体应用场景，特别是应用场景中变流器的设置数量选取。
基于半导电层的基本原理可知，要想使得半导电层的容性电流尽可能的小，应结合半导电层与本体绕组的耦合情况选取连接半导电层的等电位连接点。
下面结合图7，以半导电层与本体绕组对称耦合的情况为例，对半导电层的容性电流的流通情况进行说明。
如图7所示，变压器本体绕组中心点两侧电压跳变相反，若半导电层接母线的中点，则等效为接变压器本体绕组中点，由于半导电层与绕组中点两侧的耦合也对称，则流过的容性电流大小相同，方向相反，这样半导电层等电位接线上流过的总容性电流最小，对母线的影响也是最小的。
在上述任一实施例中，在理论情况下可以使得半导电层中的容性电流为零，但在实际应用中，理想的等电位连接点是很难准确确定的，特别是对于由变流器提供等电位连接点的实现方式，变流器所能够提供的等电位连接点的可选位置有限，更加难以使得容性电流为零。
为解决这一问题，本发明实施例提供另一种变压器。参见图9，图9是本 发明实施例提供的第七种变压器的结构示意图。在上述任一实施例的基础上，本实施例提供的变压器还包括：容性电流抑制电路。具体的，该容性电流抑制电路串联于辅助电路提供的等电位连接点与半导电层之间。对于容性电流抑制电路的具体设置数量，还应结合变压器各个本体绕组对应的半导电层中的容性电流的大小决定，当然，在生产成本允许的情况下，可以为每一半导电层设置一容性电流抑制电路。
在本实施例提供的变压器中，半导电层与辅助电路之间设置有容性电流抑制电路，通过容性电流抑制电路限制容性电流的大小，从而避免半导电层因为容性电流过大引起的发热问题，并可降低对半导电层所连的等电位连接点的影响。
可选的，容性电流抑制电路可以有电阻和电感中的任意一种实现。对于单纯通过电感实现的容性电流抑制电路，其对于高频信号阻抗较大，可以有效的抑制高频容性电流。对于低频信号，其阻抗较低，电感分压小，可以保证半导电层提供有效的等电位。
当然，容性电流抑制电路还可以由串联连接的电阻和电感共同实现。
可选的，本发明还提供一种隔离变流器，包括：第一变流器、第二变流器，以及上述任一实施例提供的变压器，其中，
所述第一变流器与所述变压器一次侧的本体绕组相连；
所述第二变流器与所述变压器二次侧的本体绕组相连。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
专业人员还可以进一步意识到，结合本文中所公开的实施例描述的各示例的单元及算法步骤，能够以电子硬件、计算机软件或者二者的结合来实现，为了清楚地说明硬件和软件的可互换性，在上述说明中已经按照功能一般性地描 述了各示例的组成及步骤。这些功能究竟以硬件还是软件方式来执行，取决于技术方案的特定应用和设计约束条件。专业技术人员可以对每个特定的应用来使用不同方法来实现所描述的功能，但是这种实现不应认为超出本发明的范围。
结合本文中所公开的实施例描述的方法或算法的步骤可以直接用硬件、处理器执行的软件模块，或者二者的结合来实施。软件模块可以置于随机存储器(RAM)、内存、只读存储器(ROM)、电可编程ROM、电可擦除可编程ROM、寄存器、硬盘、可移动磁盘、CD-ROM、或技术领域内所公知的任意其它形式的存储介质中。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的核心思想或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (13)

  1. 一种变压器，其特征在于，包括：铁芯、本体绕组，以及半导电层，其中，
    所述本体绕组套装于所述铁芯的芯柱；
    所述半导电层与所述本体绕组对应设置；
    所述半导电层的等电位连接点由辅助电路提供；
    所述辅助电路与所述本体绕组相连，且所述辅助电路与所述本体绕组的预设位置具有相等电位。
  2. 根据权利要求1所述的变压器，其特征在于，所述辅助电路提供的等电位连接点为使所述半导电层内容性电流最小的连接点。
  3. 根据权利要求1所述的变压器，其特征在于，所述辅助电路包括套装于所述芯柱的辅助绕组。
  4. 根据权利要求3所述的变压器，其特征在于，所述辅助绕组与所述本体绕组的绕向相同，且匝数相同。
  5. 根据权利要求1所述的变压器，其特征在于，所述辅助电路包括与所述变压器相连的变流器。
  6. 根据权利要求5所述的变压器，其特征在于，所述变流器的直流侧正母线作为所述等电位连接点。
  7. 根据权利要求5所述的变压器，其特征在于，所述变流器的直流侧负母线作为所述等电位连接点。
  8. 根据权利要求5所述的变压器，其特征在于，所述变流器的直流侧母线中点作为所述等电位连接点。
  9. 根据权利要求1所述的变压器，其特征在于，所述辅助电路包括：变流器和辅助绕组，其中，
    所述变流器的直流侧母线提供所述等电位连接点；
    所述变压器的全部半导电层中的N个所述半导电层与相应的变流器的直流侧母线相连，其中，N≥1；
    所述变压器的全部半导电层中的M个所述半导电层与相应的辅助绕组的等电位连接点相连，其中，M≥1。
  10. 根据权利要求1-9任一项所述的变压器，其特征在于，还包括：容性电流抑制电路，其中，
    所述容性电流抑制电路串联于所述辅助电路提供的等电位连接点与所述半导电层之间。
  11. 根据权利要求10所述的变压器，其特征在于，所述容性电流抑制电路包括电阻和电感中的任意一种。
  12. 根据权利要求10所述的变压器，其特征在于，所述容性电流抑制电路包括串联连接的电阻和电感。
  13. 一种隔离变流器，其特征在于，包括：第一变流器、第二变流器，以及权利要求1-12任一项所述的变压器，其中，
    所述第一变流器与所述变压器一次侧的本体绕组相连；
    所述第二变流器与所述变压器二次侧的本体绕组相连。
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