WO2021117493A1 - Substrate liquid processing method and substrate liquid processing device - Google Patents

Abstract

Provided is a technology advantageous for improving uniformity of substrate liquid processing. This substrate liquid processing method includes: a step for supplying a processing liquid to a substrate held by a substrate holding part and forming a liquid film of the processing liquid; and a step for irradiating a substrate, which has the liquid film of the processing liquid formed thereon, with a sound wave via a gas in the surroundings of the substrate to vibrate the substrate.

Description

Substrate liquid treatment method and substrate liquid treatment equipment

The present disclosure relates to a substrate liquid treatment method and a substrate liquid treatment apparatus.

A technique is known in which an etching solution is supplied to a substrate such as a semiconductor wafer to form a desired pattern on the substrate by etching (see, for example, Patent Document 1). After forming the desired pattern, the etching solution on the substrate is washed away by the rinsing solution, and the etching process of the substrate is completed.

Japanese Unexamined Patent Publication No. 2010-177652

Ideally, the etching of the substrate should proceed uniformly on the processed surface of the substrate. However, in reality, since the etching rate changes depending on the sparse and dense state of the pattern, it is not easy to proceed with the etching uniformly.

In particular, when a fine pattern with a high aspect ratio is formed on a substrate, a phenomenon called microloading occurs, and the difference in the degree of etching progress between the upper end (top) and the lower end (bottom) of the pattern tends to increase. There is. In particular, as the three-dimensionalization of semiconductor devices progresses, the difference in the degree of etching progress due to microloading tends to become remarkable.

Also, if the process of flushing the etching solution from the substrate with the rinsing liquid is not performed uniformly, uneven etching of the substrate will occur. In particular, when the gap (hole) between the patterns is deep, the etching solution at the lower end of the pattern is less likely to be replaced by the rinsing solution, and the lower end of the pattern tends to be etched more than the upper end of the pattern.

Also, when etching a substrate using a single-wafer type device, the substrate must be processed one by one, so a high-concentration etching solution may be used to increase productivity. However, even when a high-concentration etching solution is used, the difference in the degree of etching progress between the upper end portion and the lower end portion of the pattern tends to be large.

The present disclosure provides an advantageous technique for improving the uniformity of liquid treatment of a substrate.

One aspect of the present disclosure is a step of supplying a treatment liquid to a substrate held by a substrate holding portion to form a liquid film of the treatment liquid, and transmitting sound waves through a gas around the substrate to form a liquid film of the treatment liquid. The present invention relates to a substrate liquid treatment method including a step of irradiating a substrate on which a substrate is formed to vibrate the substrate.

According to the present disclosure, it is advantageous to improve the uniformity of liquid treatment of the substrate.

FIG. 1 is a diagram showing an outline of an example of a processing system. FIG. 2 is a diagram showing an outline of an example of a processing unit (board liquid processing apparatus). FIG. 3 is a side view illustrating the facing state of the parametric speaker and the substrate. FIG. 4 is a plan view illustrating a state in which the parametric speaker and the substrate face each other. FIG. 5 is a block diagram showing an example of the functional configuration of the control unit. FIG. 6 is a diagram for explaining an example of a substrate liquid treatment method performed by each treatment unit. FIG. 7 is a diagram for explaining an example of a substrate liquid treatment method performed by each treatment unit.

FIG. 1 is a diagram showing an outline of an example of the processing system 80. The processing system 80 shown in FIG. 1 has an loading / unloading station 91 and a processing station 92. The loading / unloading station 91 includes a mounting section 81 including a plurality of carriers C, and a transport section 82 provided with a first transport mechanism 83 and a delivery section 84. A plurality of substrates W are housed in each carrier C in a horizontal state. The processing station 92 is provided with a plurality of processing units 10 installed on both sides of the transport path 86, and a second transport mechanism 85 that reciprocates in the transport path 86.

The substrate W is taken out from the carrier C by the first transfer mechanism 83, placed on the delivery section 84, and taken out from the delivery section 84 by the second transfer mechanism 85. Then, the substrate W is carried into the corresponding processing unit 10 by the second transport mechanism 85, and a predetermined process is performed in the corresponding processing unit 10. The substrate W that has been subjected to all the necessary processing in the corresponding processing unit 10 is taken out from the corresponding processing unit 10 by the second transfer mechanism 85 and placed on the delivery unit 84, and then mounted by the first transfer mechanism 83. It is returned to the carrier C of the placement portion 81.

The processing system 80 includes a control unit 93. The control unit 93 is composed of, for example, a computer, and includes an arithmetic processing unit and a storage unit. The storage unit of the control unit 93 stores programs and data for various processes performed by the processing system 80. The arithmetic processing unit of the control unit 93 controls various devices of the processing system 80 and performs various processes by appropriately reading and executing a program stored in the storage unit.

The programs and data stored in the storage unit of the control unit 93 may be those recorded on a storage medium that can be read by a computer, and may be installed in the storage unit from the storage medium. Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

FIG. 2 is a diagram showing an outline of an example of the processing unit 10 (board liquid processing apparatus).

The processing unit 10 includes a substrate holding unit 11, a processing liquid supply unit 12, a sound wave irradiation unit 13, a state measurement unit 14, a cup structure 21, an inert gas supply unit 22, and a processing chamber 23. The substrate holding unit 11, the processing liquid supply unit 12, the sound wave irradiation unit 13, the state measurement unit 14, and the cup structure 21 are installed inside the processing chamber 23, and the inert gas supply unit 22 is an inert gas (inert gas (). For example, nitrogen) is supplied into the processing chamber 23.

The substrate holding unit 11 rotatably holds the substrate W supplied via the second transport mechanism 85 (see FIG. 1). The substrate holding portion 11 of the present embodiment has a rotation support portion 11a and a rotation drive portion 11b. The rotation support portion 11a can support the substrate W. The illustrated rotation support portion 11a employs a vacuum method of sucking and supporting the back surface of the substrate W, but the rotation support portion 11a may support the substrate W by another method (for example, a mechanical chuck method). The rotation drive unit 11b applies rotational power to the rotation support portion 11a to rotate the substrate W supported by the rotation support portion 11a together with the rotation support portion 11a. The illustrated rotation drive unit 11b is a rotation drive shaft extending on the rotation axis A1 and having a rotation support portion 11a fixedly attached to the tip portion, and a rotation that rotates the rotation drive shaft around the rotation axis A1. It is provided with a drive main body.

The processing liquid supply unit 12 supplies the processing liquid to the substrate W held by the substrate holding unit 11 and forms a liquid film of the processing liquid on the substrate W. The illustrated processing liquid supply unit 12 includes a nozzle drive unit 16, a drive arm 17, a discharge head 18, and a processing liquid discharge nozzle 19. The nozzle drive unit 16 includes a swivel drive shaft extending over the swivel axis A2 and having a drive arm 17 fixedly attached to the tip portion, and a swivel drive main body unit that rotates the swivel drive shaft around the swivel axis A2. And. A swivel drive shaft of the nozzle drive unit 16 is attached to one end side of the drive arm 17, and a discharge head 18 is attached to the other end side of the drive arm 17. The discharge head 18 is provided with a processing liquid discharge nozzle 19. The processing liquid discharge nozzle 19 attached to the drive arm 17 via the discharge head 18 moves around the swivel axis A2 together with the drive arm 17.

The processing liquid discharge nozzle 19 discharges the processing liquid supplied from the processing liquid tank via the processing liquid supply pipe. Although not shown, the processing liquid supply pipe is connected to the processing liquid discharge nozzle 19 through the drive arm 17 and the discharge head 18, and the processing in the processing liquid supply pipe is controlled by the control unit 93 (see FIG. 1). A device such as a valve that controls the flow of liquid is installed.

The number of processing liquid discharge nozzles 19 included in the processing liquid supply unit 12 is not limited. Although only one treatment liquid discharge nozzle 19 is typically shown in FIG. 2, the treatment liquid supply unit 12 may include two or more treatment liquid discharge nozzles 19. Further, the type and component of the processing liquid to be discharged from the processing liquid discharge nozzle 19 are not limited. The illustrated treatment liquid supply unit 12 serves as a treatment liquid discharge nozzle 19, which discharges an etching liquid (chemical liquid) for etching the substrate W and pure water (DIW: rinse liquid) for flushing the etching liquid from the substrate W. ) Is provided.

The sound wave irradiation unit 13 irradiates the substrate W with sound waves via a gas around the substrate W held by the substrate holding unit 11 (that is, a gas in the processing chamber 23). In particular, in the present embodiment, the sound wave from the sound wave irradiation unit 13 is applied to the substrate W on which the liquid film of the treatment liquid is formed. The sound wave irradiation unit 13 of the present embodiment includes a parametric speaker 13a, and sound waves are radiated toward the substrate W via the parametric speaker 13a. The sound wave irradiation unit 13 can change the characteristics of sound waves (for example, frequency (that is, frequency)) under the control of the control unit 93 (see FIG. 1), and produces sound waves having optimum characteristics for liquid treatment of the substrate W. It is possible to radiate toward the substrate W.

The illustrated parametric speaker 13a is installed above the substrate W held by the substrate holding portion 11, but the installation position of the parametric speaker 13a is not limited. That is, the incident direction of the sound wave radiated from the sound wave irradiation unit 13 with respect to the substrate W held by the substrate holding unit 11 is not limited. For example, the parametric speaker 13a may be installed below the substrate W held by the substrate holding unit 11, and the sound wave irradiation unit 13 may irradiate the substrate W with sound waves from below. When irradiating the substrate W with sound waves while the treatment liquid is placed on the upper surface (treatment surface) of the substrate W, by irradiating the substrate W with sound waves from below, between the treatment liquid on the substrate W and the sound waves. Direct interference can be prevented.

Further, the facing state between the processing surface of the substrate W and the parametric speaker 13a is not limited. FIG. 2 schematically shows a parametric speaker 13a arranged at a position facing a part of the upper surface (processing surface) of the substrate W, but this parametric speaker 13a is only an example. For example, as shown in FIG. 3, the parametric speaker 13a may be provided so as to face the entire upper surface of the substrate W (particularly, the upper surface on which the liquid film of the treatment liquid is formed).

Further, the parametric speaker 13a faces the portion of the upper surface of the substrate W (particularly the upper surface on which the liquid film of the treatment liquid is formed) extending in the radial direction (that is, the radial direction) with respect to the rotation axis A1. It may be provided. For example, the parametric speaker 13a may face the "portion corresponding to the radius of the upper surface" of the upper surface (processed surface) of the substrate W (see the solid line portion in FIG. 4), or "to the diameter of the upper surface". It may face the "corresponding portion" (see the alternate long and short dash line portion in FIG. 4). In such a case, for example, the substrate W is rotated about the rotation axis A1 and the sound waves are radiated through the parametric speaker 13a to irradiate the entire upper surface of the substrate W with the sound waves. it can.

The processing surface of the substrate W and the parametric speaker 13a do not necessarily face each other in the direction along the rotation axis A1, and may face each other in a direction non-parallel to the vertical direction on which gravity acts, for example. Alternatively, the parametric speaker 13a does not have to face the processing surface of the substrate W. In this case, for example, the sound wave radiated from the parametric speaker 13a may be guided by using a reflecting member (not shown) that reflects the sound wave, and finally irradiated to the substrate W.

The state measuring unit 14 measures the state of the board W held by the board holding unit 11 and transmits the measurement result to the control unit 93 (see FIG. 1). Specifically, the state measuring unit 14 may include an arbitrary sensor capable of measuring the state of the substrate W, which fluctuates according to the characteristics (for example, frequency) of the sound wave applied to the substrate W. The state measuring unit 14 of the present embodiment uses a laser beam to measure the displacement of the substrate W held by the substrate holding unit 11 in the measurement spot in the thickness direction (that is, the height direction).

The cup structure 21 has a ring-shaped planar shape and is provided so as to surround the substrate W held by the substrate holding portion 11. The cup structure 21 receives the liquid scattered from the substrate W and guides it to a drain duct (not shown), or arranges the gas flow so as to prevent the gas around the substrate W from diffusing. The specific configuration of the cup structure 21 is not limited. For example, the cup structure 21 may have a cup mainly for guiding the liquid and a cup mainly for adjusting the flow of gas as separate bodies.

The processing unit 10 may further include other devices not described above. For example, an exhaust device for discharging gas from the inside of the processing chamber 23 and a drainage device for discharging the liquid that has fallen (scattered) from the substrate W may be provided. Further, a heating device for heating the liquid on the substrate W to promote the liquid treatment of the substrate W may be provided. The specific purpose of the liquid treatment of the substrate W is not limited. For example, in order to carry out the SC-1 process in the RCA cleaning of the substrate W, the liquid treatment of the substrate W using an etching solution may be performed.

FIG. 5 is a block diagram showing an example of the functional configuration of the control unit 93. Each block shown in FIG. 5 (particularly each block included in the control unit 93) can be configured by any hardware and / or software, may be configured by a single device, or may be configured by two or more devices. May be combined and configured. Further, the two or more blocks shown in FIG. 5 may be composed of a common device.

For example, the substrate holding unit 11, the processing liquid supply unit 12, the sound wave irradiation unit 13, the state measurement unit 14, and the inert gas supply unit 22 are connected to the control unit 93. The control unit 93 includes a control drive unit 94 that controls the drive of various devices connected to the control unit 93, a sound wave characteristic determination unit 95 that determines the characteristics (frequency, etc.) of sound waves radiated from the sound wave irradiation unit 13, and various types. Includes a storage unit 96 in which data and programs are stored.

The control drive unit 94 controls the substrate holding unit 11 to support and release the substrate W in the rotation support unit 11a, and the rotation drive unit 11b rotates and stops the rotation and rotation of the rotation support unit 11a and the substrate W. To do. Further, the control drive unit 94 controls the processing liquid supply unit 12 to move the processing liquid discharge nozzle 19 or discharge the processing liquid from the processing liquid discharge nozzle 19. Further, the control drive unit 94 controls the inert gas supply unit 22 to supply and stop the supply of the inert gas into the processing chamber 23.

The sound wave characteristic determination unit 95 determines the characteristics of the sound wave radiated from the sound wave irradiation unit 13 based on the measurement result of the state measurement unit 14. The sound wave characteristic determination unit 95 of the present embodiment irradiates the substrate W on which the processing liquid is placed based on the “acceleration of the substrate W with respect to the thickness direction of the substrate W” derived from the measurement result of the state measurement unit 14. Determine the frequency of the sound wave to be produced. More specifically, the sound wave characteristic determination unit 95 has the same frequency as the natural frequency of the substrate W held by the substrate holding unit 11 based on the relationship between the sound wave radiation frequency and the measured displacement of the substrate W. Is determined as the frequency of the sound wave radiated from the sound wave irradiation unit 13. The "same frequency as the natural frequency of the substrate W" here is not only a frequency that completely matches the "natural frequency of the substrate W" but also a frequency substantially the same as the "natural frequency of the substrate W". Can include. Specifically, a frequency slightly deviating from a specific "natural frequency of the substrate W" may be included in the "same frequency as the natural frequency of the substrate W" here.

6 and 7 are diagrams for explaining an example of the substrate liquid treatment method performed by each processing unit 10. For ease of understanding, some of the elements constituting the processing unit 10 are omitted in FIGS. 6 and 7. The substrate liquid treatment method described below is performed by the control unit 93 appropriately controlling the processing system 80 (including the processing unit 10).

In the liquid treatment method of the present embodiment, the substrate W is subjected to the optimum vibration for liquid treatment using the treatment liquid prior to the step of supplying the treatment liquid from the treatment liquid discharge nozzle 19 of the treatment liquid supply unit 12 to the substrate W. A step of determining the characteristics of the sound wave (frequency in the present embodiment) is performed.

Specifically, as shown in FIG. 6, the sound wave irradiation unit 13 irradiates the substrate W carried into the processing unit 10 and held by the substrate holding unit 11 with the sound wave S while changing the frequency. The state measuring unit 14 measures the state (displacement) of the substrate W using the measurement laser beam L. In the example shown in FIG. 6, a sound wave S is applied to the substrate W in a state where nothing is placed, and the displacement of the substrate W is measured. Then, the control unit 93 (particularly the sound wave characteristic determination unit 95) determines the frequency of the “sound wave irradiating the substrate W on which the processing liquid is placed” based on the measurement result of the state measurement unit 14.

The control unit 93 (particularly the sound wave characteristic determination unit 95) of the present embodiment calculates the acceleration with respect to the thickness direction of the substrate W based on the measurement result of the state measurement unit 14 (that is, the displacement of the substrate W in the thickness direction). .. The control unit 93 is held by the substrate holding unit 11 based on the correspondence relationship between the “acceleration of the substrate W” calculated in this way and the “frequency of the sound wave radiated from the sound wave irradiation unit 13 toward the substrate W”. The natural frequency of the substrate W in the state of being in the state is derived. Specifically, based on the measurement result of the state measuring unit 14, the "frequency of the sound wave radiated from the sound wave irradiation unit 13 toward the substrate W" indicating the "acceleration of the largest substrate W" is determined by the "board holding unit 11". It is regarded as "the natural frequency of the substrate W in the held state". Then, the control unit 93 adopts the same frequency as the "natural frequency of the substrate W held by the substrate holding unit 11" as the frequency of the "sound wave irradiating the substrate W on which the processing liquid is placed". .. In this way, the control unit 93 irradiates the substrate W on which the processing liquid is placed with the "frequency of the sound wave radiated from the sound wave irradiation unit 13 toward the substrate W" indicating the "acceleration of the largest substrate W". It is used as the frequency of "sound waves".

After the characteristics of the "sound wave irradiating the substrate W on which the treatment liquid is placed" are determined in this way, the liquid treatment of the substrate W is performed using the treatment liquid supplied from the treatment liquid supply unit 12. Specifically, the step of supplying the processing liquid from the processing liquid supply unit 12 to the substrate W held by the substrate holding unit 11 and the sound wave from the sound wave irradiation unit 13 are processed via the gas around the substrate W. A step of irradiating the substrate W on which the liquid is placed to vibrate the substrate W is performed.

More specifically, as shown in FIG. 7, in the liquid treatment of the substrate W, the sound wave irradiation unit 13 is in a state where the liquid film F is formed on the substrate W by the treatment liquid discharged from the treatment liquid discharge nozzle 19. Sound waves S are emitted from the substrate W toward the substrate W. At this time, the sound wave S emitted from the sound wave irradiation unit 13 has a predetermined frequency (see FIG. 6), and the substrate W is greatly vibrated. As a result, the liquid film F on the substrate W is effectively agitated, and the uniformity of the liquid treatment of the substrate W can be improved.

In the illustrated example, a chemical solution treatment (etching treatment) using a chemical solution (etching solution) and a rinsing treatment using a rinsing solution (pure water) are performed as the liquid treatment of the substrate W. Therefore, in one or both of the chemical treatment and the rinsing treatment, the sound wave S emitted from the sound wave irradiation unit 13 is applied to the substrate W on which the treatment liquid is placed. In this way, the sound wave S from the sound wave irradiation unit 13 may be applied to the substrate W in a state where the liquid film F of the chemical solution is formed on the substrate W, or the liquid film F of the rinse liquid may be applied to the substrate W. The substrate W may be irradiated with the sound wave S from the sound wave irradiation unit 13 in the state where the sound wave S is formed.

When the sound wave S from the sound wave irradiation unit 13 is applied to the substrate W, the substrate W may be rotated by the substrate holding unit 11 or may be stopped. Further, when the sound wave S from the sound wave irradiation unit 13 is irradiated to the substrate W, the processing liquid discharge nozzle 19 may or may not discharge the processing liquid. When the substrate W is irradiated with the sound wave S from the sound wave irradiation unit 13 while discharging the treatment liquid from the treatment liquid discharge nozzle 19, the treatment liquid discharge nozzle 19 may move or stop while discharging the treatment liquid. You may be doing it.

After the step of determining the frequency of the sound wave (see FIG. 6) and the step of performing the liquid treatment of the substrate W (see FIG. 7) as described above, the treated surface of the substrate W is dried as necessary. The process is carried out. The treated surface of the substrate W is dried by any method. Typically, the substrate W is rotated by the substrate holding portion 11 to perform a drying step (spin drying step) for promoting drying of the processed surface of the substrate W.

The inventor actually made the above-mentioned processing system 80, and performed liquid treatment (etching treatment and rinsing treatment) of the substrate W while changing the frequency of sound waves. Specifically, while placing the etching solution on the processing surface of the substrate W, sound waves are radiated from the sound wave irradiation unit 13 toward the substrate W, and the film remaining on the surface of each pattern of the substrate W (that is, etched by the etching solution). The thickness of possible surface films (eg polysilicon films) was measured. Then, the inventor evaluates the difference between the "surface thickness at the upper end of the pattern" and the "surface thickness at the lower end of the pattern" of each pattern in relation to the frequency of the sound wave applied to the substrate W. Was done.

As a result, when the substrate W is irradiated with a sound wave having the same frequency as the "natural frequency of the substrate W held by the substrate holding portion 11", as compared with the case where the substrate W is irradiated with a sound wave having another frequency. The difference in surface film thickness between the upper end of the pattern and the lower end of the pattern was the smallest. That is, by performing the etching process of the substrate W while irradiating the substrate W with a sound wave having the same frequency as the "natural frequency of the substrate W held by the substrate holding portion 11", the etching process of the substrate W is uniform. We were able to obtain the finding that the sex can be improved.

As described above, according to the processing unit 10 of the present embodiment, the liquid treatment of the substrate W is performed while vibrating the substrate W using sound waves, so that the uniformity of the liquid treatment of the substrate W can be improved. .. In particular, by using a sound wave having the same frequency as the natural frequency of the substrate W, the substrate W can be resonated to greatly shake the processing liquid and reduce the bias of the liquid processing.

Further, the sound wave radiated by the parametric speaker with good directivity can be applied to the substrate W, and the substrate W can be vibrated with energy efficiency while suppressing the influence on other devices of the processing unit 10.

Further, prior to the liquid treatment of the substrate W, the optimum characteristics (frequency, etc.) of sound waves are determined using the substrate W that is actually subjected to the liquid treatment, so that the optimum characteristics according to the vibration characteristics of the individual substrates W are obtained. Each substrate W can be irradiated with sound waves having characteristics.

[Modification example]
The step of determining the characteristics of the sound wave irradiating the substrate W and the step of performing the liquid treatment of the substrate W are performed in the same processing unit 10 in the above-mentioned examples shown in FIGS. 6 and 7, but are different from each other. It may be done in unit 10. However, the vibration characteristics of the substrate W held by the substrate holding portion 11 may vary depending on the holding state of the substrate W. Therefore, from the viewpoint of preventing the holding state of the substrate W by the substrate holding portion 11 from changing between the step of determining the characteristics of the sound wave and the step of performing the liquid treatment of the substrate W, the step of determining the characteristics of the sound wave and the substrate The step of performing the liquid treatment of W is preferably performed in the same processing unit 10.

Further, the frequency of the sound wave irradiating the substrate W during the liquid treatment does not necessarily have to be determined based on the natural frequency. For example, when the liquid treatment of the substrate W is promoted by vibrating the substrate W finely, the control unit 93 (sound wave characteristic determination unit 95) determines the characteristics such as the frequency suitable for finely vibrating the substrate W in the liquid treatment. It may be adopted as a characteristic of the sound wave irradiating the substrate W at that time.

Further, the state measuring unit 14 may measure a state other than the displacement of the substrate W. Further, the control unit 93 (sound wave characteristic determination unit 95) determines the characteristics (for example, wavelength and amplitude) of the sound wave other than the frequency when determining the characteristics of the “sound wave irradiating the substrate W on which the processing liquid is placed”. It may be determined based on the measurement result of the measurement unit 14.

Further, in the step of determining the characteristics of the "sound wave irradiating the substrate W on which the treatment liquid is placed", the sound wave from the sound wave irradiation unit 13 is "for example, the substrate W on which the liquid (for example, pure water (rinse liquid)) is placed". , The state of the substrate W may be measured by the state measuring unit 14. In this case, more optimum characteristics can be adopted as "characteristics of sound waves irradiating the substrate W on which the treatment liquid is placed".

It should be noted that the embodiments disclosed herein are merely exemplary in all respects and are not to be construed in a limited way. The above-described embodiments and modifications can be omitted, replaced or changed in various forms without departing from the scope of the appended claims and their gist. For example, the above-described embodiment and modification may be combined, or an embodiment other than the above may be combined with the above-mentioned embodiment or modification.

Also, the technical categories that embody the above-mentioned technical ideas are not limited. For example, the above-mentioned substrate liquid processing apparatus may be applied to other apparatus. Further, the above-mentioned technical idea may be embodied by a computer program for causing a computer to execute one or a plurality of procedures (steps) included in the above-mentioned substrate liquid treatment method. Further, the above-mentioned technical idea may be embodied by a computer-readable non-transitory recording medium in which such a computer program is recorded.

Claims (9)

A step of supplying a treatment liquid to a substrate held by a substrate holding portion to form a liquid film of the treatment liquid, and a step of forming a liquid film of the treatment liquid.
A substrate liquid treatment method comprising a step of irradiating the substrate on which a liquid film of the treatment liquid is formed with sound waves through a gas around the substrate to vibrate the substrate. The substrate liquid treatment method according to claim 1, wherein the sound wave has the same frequency as the natural frequency of the substrate in a state of being held by the substrate holding portion. The substrate liquid treatment method according to claim 1 or 2, wherein the sound wave is radiated through a parametric speaker. The substrate liquid treatment method according to claim 3, wherein the parametric speaker faces the entire processing surface of the substrate on which the liquid film of the treatment liquid is formed. The parametric speaker faces a portion of the processing surface of the substrate on which the liquid film of the treatment liquid is formed, which extends in the radial direction with respect to the rotation axis.
The substrate liquid treatment method according to claim 3, wherein the sound wave is radiated through the parametric speaker while the substrate is rotated about the rotation axis. Prior to supplying the processing liquid to the substrate, the state of the substrate is measured by the state measuring unit while irradiating the sound wave while changing the frequency of the substrate held by the substrate holding unit, and the state is measured. The substrate liquid treatment method according to any one of claims 1 to 5, which comprises a step of determining the frequency of the sound wave to irradiate the substrate on which the treatment liquid is placed based on the measurement result of the measuring unit. The substrate liquid treatment method according to claim 6, wherein the state measuring unit measures the displacement of the substrate with respect to the thickness direction of the substrate. The substrate liquid treatment method according to claim 7, wherein the frequency of the sound wave irradiating the substrate on which the treatment liquid is placed is determined based on the acceleration of the substrate with respect to the thickness direction of the substrate. The board holding part that holds the board and
A treatment liquid supply unit that supplies a treatment liquid to the substrate held by the substrate holding unit to form a liquid film of the treatment liquid, and a treatment liquid supply unit.
A substrate liquid processing apparatus including a sound wave irradiation unit that irradiates a substrate on which a liquid film of the treatment liquid is formed with sound waves via a gas around the substrate.

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