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WO2021064901A1 - Quantum circuit system - Google Patents

Quantum circuit system Download PDF

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Publication number
WO2021064901A1
WO2021064901A1 PCT/JP2019/038936 JP2019038936W WO2021064901A1 WO 2021064901 A1 WO2021064901 A1 WO 2021064901A1 JP 2019038936 W JP2019038936 W JP 2019038936W WO 2021064901 A1 WO2021064901 A1 WO 2021064901A1
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WIPO (PCT)
Prior art keywords
quantum circuit
waveguide
quantum
shield
circuit
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PCT/JP2019/038936
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French (fr)
Japanese (ja)
Inventor
大輔 才田
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Ｍｄｒ株式会社
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Application filed by Ｍｄｒ株式会社 filed Critical Ｍｄｒ株式会社
Priority to PCT/JP2019/038936 priority Critical patent/WO2021064901A1/en
Priority to JP2020538738A priority patent/JP6986788B2/en
Publication of WO2021064901A1 publication Critical patent/WO2021064901A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices

Definitions

  • the present invention relates to a quantum circuit system.
  • Transmon is highly resistant to electrical noise and has a relatively long relaxation time.
  • Patent Document 1 describes a quantum information processing system including a waveguide having an aperture, a nonlinear quantum circuit arranged in the waveguide, and an electromagnetic field source coupled to the aperture.
  • Patent Document 2 describes an uninterrupted elongated thin film due to Josephson junction and a superconducting quantum interference device (SQUID) in electrical contact with the proximal end of the elongated thin film, with less than three Josephsons.
  • a superconducting quantum interference device (SQUID) with junctions and a ground plane that is coplanar with the elongated thin film and is in electrical contact with the distal end of the elongated thin film, the thin film, SQUID and ground plane are designed.
  • Quantum bit devices are described that include materials that are superconducting at the given operating temperature.
  • the quantum state of a quantum circuit such as Transmon may be manipulated by propagating high-frequency power to a waveguide connected to the quantum circuit. At this time, the electromagnetic field propagating in the waveguide may leak and power may propagate to other waveguides, and the quantum state of the quantum circuit connected to the other waveguide may change unintentionally. is there.
  • the present invention provides a quantum circuit system that can prevent unintended changes in the quantum state.
  • the quantum circuit system includes a first quantum circuit and a second quantum circuit capable of representing at least two quantum states, and a first waveguide and a first waveguide electromagnetically connected to the first quantum circuit.
  • the second waveguide electromagnetically connected to the two quantum circuits and the first waveguide in the normal direction of the main surface composed of a dielectric or a metal and forming the first quantum circuit and the second quantum circuit.
  • a shield that is higher than the height of the second waveguide.
  • the shield may extend along the first waveguide and the second waveguide.
  • the electromagnetic field spreading around the extending direction of the waveguide can be shielded more efficiently.
  • the first waveguide and the second waveguide include a ground line and a signal line, respectively, and the shield may be provided on the ground line.
  • the height of the shield can be made sufficiently higher than the signal line, and the electromagnetic field leaking from the signal line can be shielded.
  • the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit and the second quantum circuit are formed, and the shield is the first quantum circuit and the second quantum. It may be provided on the main surface on which the circuit is formed.
  • the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit and the second quantum circuit are formed, and the shield is the first quantum circuit and the second quantum. It may be provided on a surface separated from the main surface on which the circuit is formed.
  • the shield is provided at a position higher than the first coupling line in the normal direction of the main surface so as to cover the first coupling line that electromagnetically connects the first quantum circuit and the second quantum circuit. It may have been.
  • the shield is more than the second coupling line in the normal direction of the main surface so as to cover the second coupling line that electromagnetically connects the first quantum circuit, the second quantum circuit, and the reading circuit. It may be provided at a high position.
  • FIG. 1 is a diagram showing a network configuration of the quantum computing system 100 according to the first embodiment of the present invention.
  • the quantum computing system 100 includes a quantum circuit system 10 and a user terminal 20.
  • the quantum circuit system 10 and the user terminal 20 are communicably connected to each other via a communication network N such as the Internet, a local network, and a wired cable.
  • the user of the quantum calculation system 100 inputs data to the quantum circuit system 10 by using the user terminal 20 composed of a general-purpose classical computer, and acquires the result of the quantum calculation performed by the quantum circuit system 10. ..
  • FIG. 2 is a diagram showing an example of the configuration of the quantum circuit system 10 according to the present embodiment.
  • the quantum circuit system 10 includes a first quantum circuit 11a and a second quantum circuit 11b capable of representing at least two quantum states, and a first waveguide 12a and a second quantum electromagnetically connected to the first quantum circuit 11a.
  • a second waveguide 12b which is electromagnetically connected to the circuit 11b, is provided.
  • the quantum circuit system 10 propagates the high frequency power to the first waveguide 12a and propagates the high frequency power to the first high frequency power supply 13a and the second waveguide 12b that change the first quantum circuit 11a into a predetermined quantum state.
  • a second high frequency power supply 13b that changes the second quantum circuit 11b into a predetermined quantum state is provided.
  • the quantum circuit system 10 is composed of a dielectric or a metal, and has a first waveguide 12a and a second waveguide 12a in the normal direction of the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed. It includes a first shield 15a and a second shield 15b that are higher than the height of 12b.
  • FIG. 2 shows a case where the first shield 15a and the second shield 15b are made of metal and are grounded.
  • the first shield 15a and the second shield 15b may be made of metal and formed on the ground plane, or may be made of a dielectric.
  • the first shield 15a and The second shield 15b is formed at a position higher than the upper surfaces (the surface extending along the main surface and exposed) of the first waveguide 12a and the second waveguide 12b in the normal direction of the main surface. It's okay.
  • the first shield 15a and the second shield 15a and the second are formed.
  • the shield 15b may be formed at a position higher than the upper surface (the surface extending along the main surface and exposed) of the first waveguide 12a and the second waveguide 12b in the normal direction of the main surface. ..
  • the quantum circuit system 10 has a third quantum circuit 11c and a fourth quantum circuit 11d that can represent at least two quantum states, and a third waveguide 12c and a third that are electromagnetically connected to the third quantum circuit 11c.
  • a fourth waveguide 12d which is electromagnetically connected to the four quantum circuits 11d, is provided.
  • the quantum circuit system 10 propagates the high frequency power to the third high frequency power supply 13c and the fourth waveguide 12d that propagate the high frequency power to the third waveguide 12c to change the third quantum circuit 11c to a predetermined quantum state.
  • a fourth high-frequency power source 13d that changes the fourth quantum circuit 11d into a predetermined quantum state is provided.
  • the quantum circuit system 10 is composed of a dielectric or a metal, and in the normal direction of the main surface on which the third quantum circuit 11c and the fourth quantum circuit 11d are formed, the third waveguide 12c and the fourth waveguide are formed. It includes a second shield 15b and a third shield 15c that are higher than the height of 12d. In this example, the case where the second shield 15b and the third shield 15c are made of metal and are grounded is shown. However, the second shield 15b and the third shield 15c may be made of metal and formed on the ground plane, or may be made of a dielectric.
  • the second shield 15b and The third shield 15c is formed at a position higher than the upper surfaces (the surface extending along the main surface and exposed) of the third waveguide 12c and the fourth waveguide 12d in the normal direction of the main surface. It's okay.
  • the second shield 15b and the third shield 15b and the third are formed.
  • the shield 15c may be formed at a position higher than the upper surface (the surface extending along the main surface and exposed) of the third waveguide 12c and the fourth waveguide 12d in the normal direction of the main surface. ..
  • the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d may each have the same configuration, and may be, for example, a quantum circuit containing Transmon.
  • the first waveguide 12a, the second waveguide 12b, the third waveguide 12c, and the fourth waveguide 12d may each have the same configuration, and are, for example, a waveguide including a coplanar line, a microstrip line, and the like. Good.
  • the first high-frequency power supply 13a, the second high-frequency power supply 13b, the third high-frequency power supply 13c, and the fourth high-frequency power supply 13d may each have the same configuration, and may include, for example, a power supply that outputs a high-frequency pulse of several GHz.
  • a plurality of quantum circuits including the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d are simply referred to as quantum circuits 11.
  • a plurality of waveguides including the first waveguide 12a, the second waveguide 12b, the third waveguide 12c, and the fourth waveguide 12d are simply referred to as the waveguide 12, and the first high frequency power supply 13a and the second high frequency power supply 13b.
  • a plurality of high-frequency power supplies including the third high-frequency power supply 13c and the fourth high-frequency power supply 13d are simply referred to as high-frequency power supplies 13.
  • a plurality of shields including the first shield 15a, the second shield 15b, and the third shield 15c are simply referred to as the shield 15.
  • the quantum circuit system 10 is provided with a shield 15 having a height higher than the height of the waveguide 12, so that the leaked electromagnetic field can be shielded and an unintended change in the quantum state of the quantum circuit 11 is prevented. be able to.
  • the first shield 15a, the second shield 15b, and the third shield 15c extend along the first waveguide 12a, the second waveguide 12b, the third waveguide 12c, and the fourth waveguide 12d, respectively. doing. As a result, the electromagnetic field spreading around the extending direction of the waveguide 12 can be shielded more efficiently.
  • FIG. 2 illustrates a quantum circuit system 10 including four quantum circuits 11, four waveguides 12, four high-frequency power supplies 13, and three shields 15, but the quantum circuit 11 and the waveguide 12 are illustrated.
  • the number of the high frequency power supply 13 and the shield 15 is arbitrary.
  • the number of high-frequency power supplies 13 may be smaller than the number of quantum circuits 11, and the structure may be connected to the quantum circuits 11 via a demultiplexer or the like.
  • FIG. 3 is an example of a circuit diagram of the quantum circuit 11 according to the present embodiment.
  • Quantum circuit 11 includes a Toranzumon 111 including Josephson junction JJ and capacitor C B, a resonator 112 includes an inductor L r and a capacitor C r.
  • the high frequency power supply 13 is connected to one end of the input capacitor C in , and the high frequency pulse output from the high frequency power supply 13 is input to the transmon 111 via the gate capacitor C g to change the quantum state of the transmon 111.
  • the number of Josephson junction JJs is not limited to one, and when two Josephson junction JJs are connected in parallel to form a dc-SQUID configuration, or when Josephson junction JJs of different sizes are connected in parallel (Flux qubit, etc.), There may be cases where multiple Josephson-joined JJs of different sizes are connected (Fluxonium, etc.). In this way, the energy potential of the system may be adjusted according to the purpose depending on the number and size of the Josephson junction JJ.
  • FIG. 4a is a diagram showing the first step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • resists 41, 42, and 43 are patterned on the metal layer 30.
  • FIG. 4b is a diagram showing a second step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • the metal layer 30 is etched by ion beam etching, reactive ion etching, chemical etching, or the like to obtain the first ground wire 31, the signal wire 32, and the second ground wire 33. It is formed and the resists 41, 42, and 43 are removed.
  • FIG. 4c is a diagram showing a third step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • a metal such as aluminum is vapor-deposited on the signal line 32 by diagonal vapor deposition using the mask 60.
  • FIG. 4d is a diagram showing a fourth step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • the obliquely vapor-deposited aluminum layer 50 is naturally oxidized to form the aluminum oxide layer 51.
  • the aluminum oxide layer 51 is an insulating layer.
  • FIG. 4e is a diagram showing a fifth step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • a metal such as aluminum is vapor-deposited on the aluminum oxide layer 51 and the signal line 32 by diagonal vapor deposition using the mask 61.
  • FIG. 4f is a diagram showing a sixth step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • the aluminum layer 52 is formed on the aluminum oxide layer 51 to form a Josephson junction.
  • FIG. 4g is a diagram showing the seventh step of the manufacturing process of the quantum circuit 11 according to the present embodiment.
  • an insulating layer or a metal layer is deposited on the first ground wire 31 and the second ground wire 33 by a sputtering method or the like using a mask 62, and the first shield 15a is deposited.
  • the second shield 15b is formed.
  • a chemical vapor deposition method or the like may be used.
  • the waveguide 12 includes the ground lines 31 and 33 and the signal line 32, respectively, and the shield 15 may be provided on the ground lines 31 and 33, respectively.
  • the shield 15 By providing the shield 15 on the ground lines 31 and 33, the height of the shield 15 can be made sufficiently higher than the signal line 32, and the electromagnetic field leaking from the signal line 32 can be shielded.
  • the width of the signal line 32 is expressed as s and the distance between the signal line 32 and the ground line 31 (distance between the signal line 32 and the ground line 33) is expressed as g, the width of the ground lines 31 and 33 is s + g or more. Therefore, by providing the shield 15 on the ground wires 31 and 33, the electromagnetic field can be shielded more efficiently.
  • the electromagnetic field can be shielded more efficiently.
  • FIG. 5a is a perspective view showing an example of the configuration of the quantum circuit system 10a according to the second embodiment of the present invention. Further, FIG. 5b is a diagram showing details of the configuration of the quantum circuit system 10a according to the present embodiment.
  • the quantum circuit system 10a according to the present embodiment includes a first quantum circuit 11a, a second quantum circuit 11b, a third quantum circuit 11c, and a fourth quantum circuit 11d. Further, the quantum circuit system 10a includes a read circuit 14 for reading the quantum states of the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d.
  • the quantum circuit system 10a includes a first coaxial cable 113a electrically connected to the first quantum circuit 11a and a read coaxial cable 14a electrically connected to the read circuit 14. Similarly, the quantum circuit system 10a is electrically connected to the second coaxial cable electrically connected to the second quantum circuit 11b, the third coaxial cable electrically connected to the third quantum circuit 11c, and the fourth quantum circuit 11d. A fourth coaxial cable is provided (not shown).
  • the first coaxial cable 113a is electrically connected to a first high-frequency power source that propagates high-frequency power to change the first quantum circuit 11a into a predetermined quantum state.
  • the second coaxial cable, the third coaxial cable, and the fourth coaxial cable propagate high-frequency power to change the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d into predetermined quantum states, respectively. It is electrically connected to the second high frequency power supply, the third high frequency power supply, and the fourth high frequency power supply.
  • the first coaxial cable 113a, the second coaxial cable, the third coaxial cable, and the fourth coaxial cable are used in the first waveguide, the second waveguide, the third waveguide, and the fourth coaxial cable of the present invention.
  • the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed. More specifically, the first waveguide and the second waveguide extend in a direction substantially orthogonal to the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed.
  • the quantum circuit system 10a includes a first shield 15a and a second shield provided on the main surface on which the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d are formed.
  • the object 15b, the third shield 15c, and the fourth shield 15d are provided. With such a configuration, it is possible to suppress the interference of a plurality of lines when reading the quantum state of the quantum circuit 11, and to suppress the interference of the interaction between the quantum circuits 11.
  • the first shield 15a, the second shield 15b, the third shield 15c, and the fourth shield 15d may be provided in the arrangement shown by the broken line instead of the arrangement shown by the solid line in FIG. 5a, or the solid line. It may be provided in both the arrangement shown by and the arrangement shown by the broken line.
  • FIG. 6a is a top view showing an example of the configuration of the quantum circuit system 10b according to the third embodiment of the present invention. Further, FIG. 6b is a top view showing the configuration of the quantum circuit system 10b according to the present embodiment, and FIG. 6c is a cross-sectional view showing the configuration of the quantum circuit system 10b according to the present embodiment. Note that FIG. 6a does not show the third metal layer 153, but shows the first coupling line 17 and the second coupling line 18 covered by the third metal layer 153. Further, FIG. 6c is a cross-sectional view taken along the line VIc-VIc shown in FIG. 6b.
  • the quantum circuit system 10a includes a first quantum circuit 11a, a second quantum circuit 11b, a third quantum circuit 11c, and a fourth quantum circuit 11d. Further, the quantum circuit system 10a includes a read circuit 14 for reading the quantum states of the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d.
  • the quantum circuit system 10a includes a first coaxial cable electrically connected to the first quantum circuit 11a and a read coaxial cable electrically connected to the read circuit 14 (not shown). Similarly, the quantum circuit system 10a is electrically connected to the second coaxial cable electrically connected to the second quantum circuit 11b, the third coaxial cable electrically connected to the third quantum circuit 11c, and the fourth quantum circuit 11d. A fourth coaxial cable is provided (not shown).
  • the first coaxial cable is electrically connected to a first high-frequency power source that propagates high-frequency power to change the first quantum circuit 11a into a predetermined quantum state.
  • the second coaxial cable, the third coaxial cable, and the fourth coaxial cable propagate high-frequency power to change the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d into predetermined quantum states, respectively. It is electrically connected to the second high frequency power supply, the third high frequency power supply, and the fourth high frequency power supply.
  • the first coaxial cable, the second coaxial cable, the third coaxial cable, and the fourth coaxial cable correspond to the first waveguide, the second waveguide, the third waveguide, and the fourth coaxial cable of the present invention.
  • the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed. More specifically, the first waveguide and the second waveguide extend in a direction substantially orthogonal to the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed.
  • the quantum circuit system 10b includes a shield provided on a surface separated from the main surface on which the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d are formed. .. More specifically, the quantum circuit system 10b includes a third metal layer 153 provided on a surface separated from the main surface on which the quantum circuit 11 is formed. With such a configuration, it is possible to shield the leaking electromagnetic field generated on the main surface on which the quantum circuit 11 is formed and prevent interference.
  • the shield covers the first coupling line 17 that electromagnetically connects the first quantum circuit 11a and the second quantum circuit 11b so as to cover the first coupling line 17 in the normal direction of the main surface. It is provided at a position higher than 17.
  • the first coupling line 17 includes the first quantum circuit 11a and the second quantum circuit 11b, the second quantum circuit 11b and the third quantum circuit 11c, and the third quantum circuit 11c and the fourth quantum circuit 11d.
  • the fourth quantum circuit 11d and the first quantum circuit 11a are electrically connected to each other.
  • the third metal layer 153 which is a shield, is provided so as to cover the first coupling line 17. With such a configuration, it is possible to shield the leaking electromagnetic field generated in the first coupling line 17 and prevent interference with other circuits.
  • the shield covers the second coupling line 18 that electromagnetically connects the first quantum circuit 11a and the second quantum circuit 11b and the reading circuit 14, in the normal direction of the main surface. , Is provided at a position higher than the second coupling line 18.
  • the second coupling line 18 includes a first quantum circuit 11a and a read circuit 14, a second quantum circuit 11b and a read circuit 14, a third quantum circuit 11c and a read circuit 14, and a fourth quantum circuit 11d.
  • the read circuit 14 are electromagnetically connected to each other.
  • the third metal layer 153 which is a shield, is provided so as to cover the second coupling line 18. With such a configuration, it is possible to shield the leaking electromagnetic field generated in the second coupling line 18 and prevent interference with other circuits.
  • the shield of the present embodiment includes the first metal layer 151, the second metal layer 152, and the third metal layer 153.
  • the first metal layer 151 is formed in a rectangular shape so as to surround the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d.
  • the second metal layer 152 is formed in a triangular shape in a triangular region formed by the two quantum circuits 11 and the read circuit 14.
  • the third metal layer 153 includes a portion that straddles the first metal layer 151 and the second metal layer 152, and a portion that straddles the second metal layer 152. The portion of the third metal layer 153 that straddles the first metal layer 151 and the second metal layer 152 covers the first coupling line 17.
  • the second metal layer 152 may be provided in an arrangement shown by a broken line instead of the arrangement shown by the solid line in FIG. 6a, or may be provided in both the arrangement shown by the solid line and the arrangement shown by the broken line.
  • 10 ... Quantum circuit system 10a ... Quantum circuit system according to the second embodiment, 10b ... Quantum circuit system according to the third embodiment, 11a ... First quantum circuit, 11b ... Second quantum circuit, 11c ... Third quantum circuit , 11d ... 4th quantum circuit, 12a ... 1st waveguide, 12b ... 2nd waveguide, 12c ... 3rd waveguide, 12d ... 4th waveguide, 14 ... Read circuit, 14a ... Read coaxial cable, 13a ... 1 high frequency power supply, 13b ... second high frequency power supply, 13c ... third high frequency power supply, 13d ... fourth high frequency power supply, 14 ... reading circuit, 15a ... first shield, 15b ... second shield, 15c ...
  • third shield 17 ... 1st coupling line, 18 ... 2nd coupling line, 20 ... user terminal, 30 ... metal layer, 31 ... 1st ground line, 32 ... signal line, 33 ... 2nd ground line, 41, 42, 43 ... Resist, 50, 52 ... Aluminum layer, 51 ... Aluminum oxide layer, 60, 61, 62 ... Mask, 100 ... Quantum computing system, 111 ... Transmon, 112 ... Resonator, 113a ... First coaxial cable, 151 ... First metal Layer, 152 ... 2nd metal layer, 153 ... 3rd metal layer

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Abstract

Provided is a quantum circuit system capable of preventing an unintended change in quantum state. A quantum circuit system 10 comprises: a first quantum circuit 11a and a second quantum circuit 11b which are capable of representing at least two quantum states; a first waveguide 12a electromagnetically connected to the first quantum circuit 11a and a second waveguide 12b electromagnetically connected to the second quantum circuit 11b; and a shield 15 which is composed of a dielectric or a metal, and which is higher than the heights of the first waveguide 12a and the second waveguide 12b in a direction normal to a major surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed.

Description

量子回路システムQuantum circuit system
　本発明は、量子回路システムに関する。 The present invention relates to a quantum circuit system.
　近年、量子コンピュータの実用化に向けて研究が進められている。例えば、下記非特許文献１では、トランズモンと呼ばれる量子回路が提案された。トランズモンは、電気的ノイズ耐性が高く、比較的長い緩和時間を有する。 In recent years, research has been carried out toward the practical application of quantum computers. For example, in Non-Patent Document 1 below, a quantum circuit called Transmon was proposed. Transmon is highly resistant to electrical noise and has a relatively long relaxation time.
　また、下記特許文献１には、開口を有する導波路と、導波路内に配設される非線形量子回路と、開口に結合される電磁場源とを備える量子情報処理システムが記載されている。 Further, Patent Document 1 below describes a quantum information processing system including a waveguide having an aperture, a nonlinear quantum circuit arranged in the waveguide, and an electromagnetic field source coupled to the aperture.
　さらに、下記特許文献２には、ジョセフソン接合による中断のない細長い薄膜と、細長い薄膜の近位端と電気接触している超伝導量子干渉デバイス(SQUID)であって、３つより少ないジョセフソン接合を有する、超伝導量子干渉デバイス(SQUID)と、細長い薄膜と同一平面内にあり、細長い薄膜の遠位端と電気接触している接地面とを備え、薄膜、SQUID及び接地面が、設計された動作温度において超伝導状態になる材料を含む、量子ビットデバイスが記載されている。 Further, Patent Document 2 below describes an uninterrupted elongated thin film due to Josephson junction and a superconducting quantum interference device (SQUID) in electrical contact with the proximal end of the elongated thin film, with less than three Josephsons. A superconducting quantum interference device (SQUID) with junctions and a ground plane that is coplanar with the elongated thin film and is in electrical contact with the distal end of the elongated thin film, the thin film, SQUID and ground plane are designed. Quantum bit devices are described that include materials that are superconducting at the given operating temperature.
特開２０１６－５１０４９７号公報Japanese Unexamined Patent Publication No. 2016-510497 特開２０１８－５２４７９５号公報JP-A-2018-524795
　トランズモン等の量子回路の量子状態は、量子回路に接続された導波路に高周波電力を伝搬させることで操作されることがある。このとき、導波路を伝搬する電磁場が漏れて、他の導波路にも電力が伝搬することがあり、他の導波路に接続された量子回路の量子状態が意図せず変化してしまうことがある。 The quantum state of a quantum circuit such as Transmon may be manipulated by propagating high-frequency power to a waveguide connected to the quantum circuit. At this time, the electromagnetic field propagating in the waveguide may leak and power may propagate to other waveguides, and the quantum state of the quantum circuit connected to the other waveguide may change unintentionally. is there.
　このような意図しない量子状態の変化を訂正するために、量子エラー訂正の技術を用いることが検討されている。しかしながら、量子エラー訂正を実装するためには余分な量子回路を設ける必要があり、回路の大規模化が必要となる。 In order to correct such unintended changes in the quantum state, it is being considered to use quantum error correction technology. However, in order to implement quantum error correction, it is necessary to provide an extra quantum circuit, and it is necessary to increase the scale of the circuit.
　そこで、本発明は、意図しない量子状態の変化を防止することができる量子回路システムを提供する。 Therefore, the present invention provides a quantum circuit system that can prevent unintended changes in the quantum state.
　本発明の一態様に係る量子回路システムは、少なくとも２つの量子状態を表すことができる第１量子回路及び第２量子回路と、第１量子回路に電磁気的に接続された第１導波路及び第２量子回路に電磁気的に接続された第２導波路と、誘電体又は金属で構成され、第１量子回路及び第２量子回路が形成されている主面の法線方向において、第１導波路及び第２導波路の高さよりも高い遮蔽物と、を備える。 The quantum circuit system according to one aspect of the present invention includes a first quantum circuit and a second quantum circuit capable of representing at least two quantum states, and a first waveguide and a first waveguide electromagnetically connected to the first quantum circuit. The second waveguide electromagnetically connected to the two quantum circuits and the first waveguide in the normal direction of the main surface composed of a dielectric or a metal and forming the first quantum circuit and the second quantum circuit. And a shield that is higher than the height of the second waveguide.
　この態様によれば、導波路の高さよりも高い遮蔽物を備えることで、漏れた電磁場を遮蔽することができ、量子回路について意図しない量子状態の変化を防止することができる。 According to this aspect, by providing a shield higher than the height of the waveguide, it is possible to shield the leaked electromagnetic field and prevent an unintended change in the quantum state of the quantum circuit.
　上記態様において、遮蔽物は、第１導波路及び第２導波路に沿って延伸していてもよい。 In the above aspect, the shield may extend along the first waveguide and the second waveguide.
　この態様によれば、導波路の延伸方向を中心として広がる電磁場をより効率的に遮蔽することができる。 According to this aspect, the electromagnetic field spreading around the extending direction of the waveguide can be shielded more efficiently.
　上記態様において、第１導波路及び第２導波路は、それぞれグランド線及びシグナル線を含み、遮蔽物は、グランド線上に設けられていてもよい。 In the above aspect, the first waveguide and the second waveguide include a ground line and a signal line, respectively, and the shield may be provided on the ground line.
　この態様によれば、遮蔽物をグランド線上に設けることで、遮蔽物の高さをシグナル線より十分に高くし、シグナル線から漏れる電磁場を遮蔽することができる。 According to this aspect, by providing the shield on the ground line, the height of the shield can be made sufficiently higher than the signal line, and the electromagnetic field leaking from the signal line can be shielded.
　上記態様において、第１導波路及び第２導波路は、第１量子回路及び第２量子回路が形成される主面と交差する方向に延伸し、遮蔽物は、第１量子回路及び第２量子回路が形成される主面に設けられていてもよい。 In the above embodiment, the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit and the second quantum circuit are formed, and the shield is the first quantum circuit and the second quantum. It may be provided on the main surface on which the circuit is formed.
　この態様によれば、量子回路の量子状態を読み出す場合における複数の線路の干渉を抑えたり、量子回路間の相互作用の干渉を抑えたりすることができる。 According to this aspect, it is possible to suppress the interference of a plurality of lines when reading the quantum state of the quantum circuit, and to suppress the interference of the interaction between the quantum circuits.
　上記態様において、第１導波路及び第２導波路は、第１量子回路及び第２量子回路が形成される主面と交差する方向に延伸し、遮蔽物は、第１量子回路及び第２量子回路が形成される主面から離間した面に設けられていてもよい。 In the above embodiment, the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit and the second quantum circuit are formed, and the shield is the first quantum circuit and the second quantum. It may be provided on a surface separated from the main surface on which the circuit is formed.
　この態様によれば、量子回路が形成される主面において生じた漏れ電磁場を遮蔽し、干渉を防ぐことができる。 According to this aspect, it is possible to shield the leaking electromagnetic field generated on the main surface on which the quantum circuit is formed and prevent interference.
　上記態様において、遮蔽物は、第１量子回路及び第２量子回路を電磁気的に接続する第１結合線路を覆うように、主面の法線方向において、第１結合線路よりも高い位置に設けられていてもよい。 In the above embodiment, the shield is provided at a position higher than the first coupling line in the normal direction of the main surface so as to cover the first coupling line that electromagnetically connects the first quantum circuit and the second quantum circuit. It may have been.
　この態様によれば、第１結合線路において生じた漏れ電磁場を遮蔽し、他の回路との干渉を防ぐことができる。 According to this aspect, it is possible to shield the leaking electromagnetic field generated in the first coupling line and prevent interference with other circuits.
　上記態様において、遮蔽物は、第１量子回路及び第２量子回路と読出回路とを電磁気的に接続する第２結合線路を覆うように、主面の法線方向において、第２結合線路よりも高い位置に設けられていてもよい。 In the above aspect, the shield is more than the second coupling line in the normal direction of the main surface so as to cover the second coupling line that electromagnetically connects the first quantum circuit, the second quantum circuit, and the reading circuit. It may be provided at a high position.
　この態様によれば、第２結合線路において生じた漏れ電磁場を遮蔽し、他の回路との干渉を防ぐことができる。 According to this aspect, it is possible to shield the leaking electromagnetic field generated in the second coupling line and prevent interference with other circuits.
　本発明によれば、意図しない量子状態の変化を防止することができる量子回路システムを提供することができる。 According to the present invention, it is possible to provide a quantum circuit system capable of preventing an unintended change in the quantum state.
本発明の第１実施形態に係る量子回路システムのネットワーク構成を示す図である。It is a figure which shows the network structure of the quantum circuit system which concerns on 1st Embodiment of this invention. 本実施形態に係る量子回路システムの構成の一例を示す図である。It is a figure which shows an example of the structure of the quantum circuit system which concerns on this embodiment. 本実施形態に係る量子回路の回路図の一例である。This is an example of a circuit diagram of a quantum circuit according to this embodiment. 本実施形態に係る量子回路の製造プロセスの第１ステップを示す図である。It is a figure which shows the 1st step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本実施形態に係る量子回路の製造プロセスの第２ステップを示す図である。It is a figure which shows the 2nd step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本実施形態に係る量子回路の製造プロセスの第３ステップを示す図である。It is a figure which shows the 3rd step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本実施形態に係る量子回路の製造プロセスの第４ステップを示す図である。It is a figure which shows the 4th step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本実施形態に係る量子回路の製造プロセスの第５ステップを示す図である。It is a figure which shows the 5th step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本実施形態に係る量子回路の製造プロセスの第６ステップを示す図である。It is a figure which shows the 6th step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本実施形態に係る量子回路の製造プロセスの第７ステップを示す図である。It is a figure which shows the 7th step of the manufacturing process of the quantum circuit which concerns on this embodiment. 本発明の第２実施形態に係る量子回路システムの構成の一例を示す斜視図である。It is a perspective view which shows an example of the structure of the quantum circuit system which concerns on 2nd Embodiment of this invention. 本実施形態に係る量子回路システムの構成の詳細を示す図である。It is a figure which shows the detail of the structure of the quantum circuit system which concerns on this embodiment. 本発明の第３実施形態に係る量子回路システムの構成の一例を示す上面図である。It is a top view which shows an example of the structure of the quantum circuit system which concerns on 3rd Embodiment of this invention. 本実施形態に係る量子回路システムの構成を示す上面図である。It is a top view which shows the structure of the quantum circuit system which concerns on this embodiment. 本実施形態に係る量子回路システムの構成を示す断面図である。It is sectional drawing which shows the structure of the quantum circuit system which concerns on this embodiment.
　添付図面を参照して、本発明の実施形態について説明する。なお、各図において、同一の符号を付したものは、同一又は同様の構成を有する。 An embodiment of the present invention will be described with reference to the accompanying drawings. In each figure, those having the same reference numerals have the same or similar configurations.
［第１実施形態］
　図１は、本発明の第１実施形態に係る量子計算システム１００のネットワーク構成を示す図である。量子計算システム１００は、量子回路システム１０と、ユーザ端末２０とを含む。量子回路システム１０及びユーザ端末２０は、インターネット、ローカルネットワーク、有線ケーブル等の通信ネットワークＮを介して互いに通信可能に接続される。量子計算システム１００のユーザは、汎用の古典コンピュータで構成されるユーザ端末２０を用いて量子回路システム１０にデータを入力したり、量子回路システム１０によって行われた量子計算の結果を取得したりする。 [First Embodiment]
FIG. 1 is a diagram showing a network configuration of the quantum computing system 100 according to the first embodiment of the present invention. The quantum computing system 100 includes a quantum circuit system 10 and a user terminal 20. The quantum circuit system 10 and the user terminal 20 are communicably connected to each other via a communication network N such as the Internet, a local network, and a wired cable. The user of the quantum calculation system 100 inputs data to the quantum circuit system 10 by using the user terminal 20 composed of a general-purpose classical computer, and acquires the result of the quantum calculation performed by the quantum circuit system 10. ..
　図２は、本実施形態に係る量子回路システム１０の構成の一例を示す図である。量子回路システム１０は、少なくとも２つの量子状態を表すことができる第１量子回路１１ａ及び第２量子回路１１ｂと、第１量子回路１１ａに電磁気的に接続された第１導波路１２ａ及び第２量子回路１１ｂに電磁気的に接続された第２導波路１２ｂと、を備える。また、量子回路システム１０は、第１導波路１２ａに高周波電力を伝搬させて第１量子回路１１ａを所定の量子状態に変化させる第１高周波電源１３ａ及び第２導波路１２ｂに高周波電力を伝搬させて第２量子回路１１ｂを所定の量子状態に変化させる第２高周波電源１３ｂを備える。さらに、量子回路システム１０は、誘電体又は金属で構成され、第１量子回路１１ａ及び第２量子回路１１ｂが形成されている主面の法線方向において、第１導波路１２ａ及び第２導波路１２ｂの高さよりも高い第１遮蔽物１５ａ及び第２遮蔽物１５ｂを備える。図２では、第１遮蔽物１５ａ及び第２遮蔽物１５ｂが金属で構成されており、接地されている場合を示している。もっとも、第１遮蔽物１５ａ及び第２遮蔽物１５ｂは、金属で構成されてグランドプレーン上に形成されていてもよいし、誘電体で構成されていてもよい。ここで、第１導波路１２ａ及び第２導波路１２ｂが、第１量子回路１１ａ及び第２量子回路１１ｂが形成されている主面に凸状に形成されている場合、第１遮蔽物１５ａ及び第２遮蔽物１５ｂは、主面の法線方向において、第１導波路１２ａ及び第２導波路１２ｂの上面（主面に沿って延伸し、露出している面）より高い位置に形成されていてよい。また、第１導波路１２ａ及び第２導波路１２ｂが、第１量子回路１１ａ及び第２量子回路１１ｂが形成されている主面に凹状に形成されている場合、第１遮蔽物１５ａ及び第２遮蔽物１５ｂは、主面の法線方向において、第１導波路１２ａ及び第２導波路１２ｂの上面（主面に沿って延伸し、露出している面）より高い位置に形成されていてよい。 FIG. 2 is a diagram showing an example of the configuration of the quantum circuit system 10 according to the present embodiment. The quantum circuit system 10 includes a first quantum circuit 11a and a second quantum circuit 11b capable of representing at least two quantum states, and a first waveguide 12a and a second quantum electromagnetically connected to the first quantum circuit 11a. A second waveguide 12b, which is electromagnetically connected to the circuit 11b, is provided. Further, the quantum circuit system 10 propagates the high frequency power to the first waveguide 12a and propagates the high frequency power to the first high frequency power supply 13a and the second waveguide 12b that change the first quantum circuit 11a into a predetermined quantum state. A second high frequency power supply 13b that changes the second quantum circuit 11b into a predetermined quantum state is provided. Further, the quantum circuit system 10 is composed of a dielectric or a metal, and has a first waveguide 12a and a second waveguide 12a in the normal direction of the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed. It includes a first shield 15a and a second shield 15b that are higher than the height of 12b. FIG. 2 shows a case where the first shield 15a and the second shield 15b are made of metal and are grounded. However, the first shield 15a and the second shield 15b may be made of metal and formed on the ground plane, or may be made of a dielectric. Here, when the first waveguide 12a and the second waveguide 12b are formed in a convex shape on the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed, the first shield 15a and The second shield 15b is formed at a position higher than the upper surfaces (the surface extending along the main surface and exposed) of the first waveguide 12a and the second waveguide 12b in the normal direction of the main surface. It's okay. Further, when the first waveguide 12a and the second waveguide 12b are formed in a concave shape on the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed, the first shield 15a and the second shield 15a and the second are formed. The shield 15b may be formed at a position higher than the upper surface (the surface extending along the main surface and exposed) of the first waveguide 12a and the second waveguide 12b in the normal direction of the main surface. ..
　さらに、量子回路システム１０は、少なくとも２つの量子状態を表すことができる第３量子回路１１ｃ及び第４量子回路１１ｄと、第３量子回路１１ｃに電磁気的に接続された第３導波路１２ｃ及び第４量子回路１１ｄに電磁気的に接続された第４導波路１２ｄと、を備える。また、量子回路システム１０は、第３導波路１２ｃに高周波電力を伝搬させて第３量子回路１１ｃを所定の量子状態に変化させる第３高周波電源１３ｃ及び第４導波路１２ｄに高周波電力を伝搬させて第４量子回路１１ｄを所定の量子状態に変化させる第４高周波電源１３ｄを備える。さらに、量子回路システム１０は、誘電体又は金属で構成され、第３量子回路１１ｃ及び第４量子回路１１ｄが形成されている主面の法線方向において、第３導波路１２ｃ及び第４導波路１２ｄの高さよりも高い第２遮蔽物１５ｂ及び第３遮蔽物１５ｃを備える。本例では、第２遮蔽物１５ｂ及び第３遮蔽物１５ｃが金属で構成されており、接地されている場合を示している。もっとも、第２遮蔽物１５ｂ及び第３遮蔽物１５ｃは、金属で構成されてグランドプレーン上に形成されていてもよいし、誘電体で構成されていてもよい。ここで、第３導波路１２ｃ及び第４導波路１２ｄが、第３量子回路１１ｃ及び第４量子回路１１ｄが形成されている主面に凸状に形成されている場合、第２遮蔽物１５ｂ及び第３遮蔽物１５ｃは、主面の法線方向において、第３導波路１２ｃ及び第４導波路１２ｄの上面（主面に沿って延伸し、露出している面）より高い位置に形成されていてよい。また、第３導波路１２ｃ及び第４導波路１２ｄが、第３量子回路１１ｃ及び第４量子回路１１ｄが形成されている主面に凹状に形成されている場合、第２遮蔽物１５ｂ及び第３遮蔽物１５ｃは、主面の法線方向において、第３導波路１２ｃ及び第４導波路１２ｄの上面（主面に沿って延伸し、露出している面）より高い位置に形成されていてよい。 Further, the quantum circuit system 10 has a third quantum circuit 11c and a fourth quantum circuit 11d that can represent at least two quantum states, and a third waveguide 12c and a third that are electromagnetically connected to the third quantum circuit 11c. A fourth waveguide 12d, which is electromagnetically connected to the four quantum circuits 11d, is provided. Further, the quantum circuit system 10 propagates the high frequency power to the third high frequency power supply 13c and the fourth waveguide 12d that propagate the high frequency power to the third waveguide 12c to change the third quantum circuit 11c to a predetermined quantum state. A fourth high-frequency power source 13d that changes the fourth quantum circuit 11d into a predetermined quantum state is provided. Further, the quantum circuit system 10 is composed of a dielectric or a metal, and in the normal direction of the main surface on which the third quantum circuit 11c and the fourth quantum circuit 11d are formed, the third waveguide 12c and the fourth waveguide are formed. It includes a second shield 15b and a third shield 15c that are higher than the height of 12d. In this example, the case where the second shield 15b and the third shield 15c are made of metal and are grounded is shown. However, the second shield 15b and the third shield 15c may be made of metal and formed on the ground plane, or may be made of a dielectric. Here, when the third waveguide 12c and the fourth waveguide 12d are formed in a convex shape on the main surface on which the third quantum circuit 11c and the fourth quantum circuit 11d are formed, the second shield 15b and The third shield 15c is formed at a position higher than the upper surfaces (the surface extending along the main surface and exposed) of the third waveguide 12c and the fourth waveguide 12d in the normal direction of the main surface. It's okay. Further, when the third waveguide 12c and the fourth waveguide 12d are formed in a concave shape on the main surface on which the third quantum circuit 11c and the fourth quantum circuit 11d are formed, the second shield 15b and the third shield 15b and the third are formed. The shield 15c may be formed at a position higher than the upper surface (the surface extending along the main surface and exposed) of the third waveguide 12c and the fourth waveguide 12d in the normal direction of the main surface. ..
　第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄは、それぞれ同様の構成を有してよく、例えばトランズモンを含む量子回路であってよい。第１導波路１２ａ、第２導波路１２ｂ、第３導波路１２ｃ及び第４導波路１２ｄは、それぞれ同様の構成を有してよく、例えばコプレナー線路やマイクロストリップ線路等を含む導波路であってよい。第１高周波電源１３ａ、第２高周波電源１３ｂ、第３高周波電源１３ｃ及び第４高周波電源１３ｄは、それぞれ同様の構成を有してよく、例えば数ＧＨｚの高周波パルスを出力する電源を含んでよい。 The first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d may each have the same configuration, and may be, for example, a quantum circuit containing Transmon. The first waveguide 12a, the second waveguide 12b, the third waveguide 12c, and the fourth waveguide 12d may each have the same configuration, and are, for example, a waveguide including a coplanar line, a microstrip line, and the like. Good. The first high-frequency power supply 13a, the second high-frequency power supply 13b, the third high-frequency power supply 13c, and the fourth high-frequency power supply 13d may each have the same configuration, and may include, for example, a power supply that outputs a high-frequency pulse of several GHz.
　本明細書では、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄを含む複数の量子回路を単に量子回路１１と呼ぶ。また、第１導波路１２ａ、第２導波路１２ｂ、第３導波路１２ｃ及び第４導波路１２ｄを含む複数の導波路を単に導波路１２と呼び、第１高周波電源１３ａ、第２高周波電源１３ｂ、第３高周波電源１３ｃ及び第４高周波電源１３ｄを含む複数の高周波電源を単に高周波電源１３と呼ぶ。さらに、第１遮蔽物１５ａ、第２遮蔽物１５ｂ及び第３遮蔽物１５ｃを含む複数の遮蔽物を単に遮蔽物１５と呼ぶ。 In this specification, a plurality of quantum circuits including the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d are simply referred to as quantum circuits 11. Further, a plurality of waveguides including the first waveguide 12a, the second waveguide 12b, the third waveguide 12c, and the fourth waveguide 12d are simply referred to as the waveguide 12, and the first high frequency power supply 13a and the second high frequency power supply 13b. A plurality of high-frequency power supplies including the third high-frequency power supply 13c and the fourth high-frequency power supply 13d are simply referred to as high-frequency power supplies 13. Further, a plurality of shields including the first shield 15a, the second shield 15b, and the third shield 15c are simply referred to as the shield 15.
　第１導波路１２ａに高周波電力を伝搬させると、少なからず電磁場が漏れて、隣接する第２導波路１２ｂに誘導電力が伝搬し、第２量子回路１１ｂの量子状態に意図しない変化を加えてしまうおそれがある。同様に、第２導波路１２ｂに高周波電力を伝搬させると、少なからず電磁場が漏れて、隣接する第１導波路１２ａ及び第３導波路１２ｃに誘導電力が伝搬し、第１量子回路１１ａ及び第３量子回路１１ｃの量子状態に意図しない変化を加えてしまうおそれがある。本実施形態に係る量子回路システム１０は、導波路１２の高さよりも高い遮蔽物１５を備えることで、漏れた電磁場を遮蔽することができ、量子回路１１について意図しない量子状態の変化を防止することができる。 When high-frequency power is propagated to the first waveguide 12a, an electromagnetic field leaks to some extent, and the induced power propagates to the adjacent second waveguide 12b, causing an unintended change in the quantum state of the second quantum circuit 11b. There is a risk. Similarly, when high-frequency power is propagated to the second waveguide 12b, not a little electromagnetic field leaks, and the induced power propagates to the adjacent first waveguide 12a and third waveguide 12c, and the first quantum circuit 11a and the first quantum circuit 11a and the first. 3 There is a risk of unintentionally changing the quantum state of the quantum circuit 11c. The quantum circuit system 10 according to the present embodiment is provided with a shield 15 having a height higher than the height of the waveguide 12, so that the leaked electromagnetic field can be shielded and an unintended change in the quantum state of the quantum circuit 11 is prevented. be able to.
　ここで、第１遮蔽物１５ａ、第２遮蔽物１５ｂ及び第３遮蔽物１５ｃは、それぞれ第１導波路１２ａ、第２導波路１２ｂ、第３導波路１２ｃ及び第４導波路１２ｄに沿って延伸している。これにより、導波路１２の延伸方向を中心として広がる電磁場をより効率的に遮蔽することができる。 Here, the first shield 15a, the second shield 15b, and the third shield 15c extend along the first waveguide 12a, the second waveguide 12b, the third waveguide 12c, and the fourth waveguide 12d, respectively. doing. As a result, the electromagnetic field spreading around the extending direction of the waveguide 12 can be shielded more efficiently.
　図２では、４つの量子回路１１と、４つの導波路１２と、４つの高周波電源１３と、３つの遮蔽物１５を備える量子回路システム１０を例示しているが、量子回路１１、導波路１２、高周波電源１３及び遮蔽物１５の数は任意である。高周波電源１３の数が量子回路１１の数より少なく、分波器等を介して量子回路１１に接続される構造であってもよい。 FIG. 2 illustrates a quantum circuit system 10 including four quantum circuits 11, four waveguides 12, four high-frequency power supplies 13, and three shields 15, but the quantum circuit 11 and the waveguide 12 are illustrated. The number of the high frequency power supply 13 and the shield 15 is arbitrary. The number of high-frequency power supplies 13 may be smaller than the number of quantum circuits 11, and the structure may be connected to the quantum circuits 11 via a demultiplexer or the like.
　図３は、本実施形態に係る量子回路１１の回路図の一例である。量子回路１１は、ジョセフソン接合ＪＪ及びキャパシタＣＢを含むトランズモン１１１と、インダクタＬｒ及びキャパシタＣｒを含む共振器１１２とを有する。高周波電源１３は、入力キャパシタＣｉｎの一端に接続され、高周波電源１３から出力される高周波パルスは、ゲートキャパシタＣｇを介してトランズモン１１１に入力され、トランズモン１１１の量子状態を変化させる。ジョセフソン接合ＪＪの数は１つとは限らず、並列に２つ接続されdc-SQUIDの構成とする場合や、サイズが異なるジョセフソン接合ＪＪが並列に接続される場合(Flux qubit等)や、サイズが異なるジョセフソン接合ＪＪが複数接続される場合(Fluxonium等)があり得る。このようにジョセフソン接合ＪＪの数やサイズにより、系のエネルギーポテンシャルが目的に応じて調整されることがある。 FIG. 3 is an example of a circuit diagram of the quantum circuit 11 according to the present embodiment. Quantum circuit 11 includes a Toranzumon 111 including Josephson junction JJ and capacitor C B, a resonator 112 includes an inductor L r and a capacitor C r. The high frequency power supply 13 is connected to one end of the input capacitor C in , and the high frequency pulse output from the high frequency power supply 13 is input to the transmon 111 via the gate capacitor C g to change the quantum state of the transmon 111. The number of Josephson junction JJs is not limited to one, and when two Josephson junction JJs are connected in parallel to form a dc-SQUID configuration, or when Josephson junction JJs of different sizes are connected in parallel (Flux qubit, etc.), There may be cases where multiple Josephson-joined JJs of different sizes are connected (Fluxonium, etc.). In this way, the energy potential of the system may be adjusted according to the purpose depending on the number and size of the Josephson junction JJ.
　図４ａは、本実施形態に係る量子回路１１の製造プロセスの第１ステップを示す図である。量子回路１１の製造プロセスの第１ステップでは、金属層３０の上にレジスト４１，４２，４３がパターニングされる。 FIG. 4a is a diagram showing the first step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the first step of the manufacturing process of the quantum circuit 11, resists 41, 42, and 43 are patterned on the metal layer 30.
　図４ｂは、本実施形態に係る量子回路１１の製造プロセスの第２ステップを示す図である。量子回路１１の製造プロセスの第２ステップでは、イオンビームエッチング、反応性イオンエッチング又は化学エッチング等により、金属層３０をエッチングして、第１グランド線３１、シグナル線３２及び第２グランド線３３を形成し、レジスト４１，４２，４３を除去する。 FIG. 4b is a diagram showing a second step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the second step of the manufacturing process of the quantum circuit 11, the metal layer 30 is etched by ion beam etching, reactive ion etching, chemical etching, or the like to obtain the first ground wire 31, the signal wire 32, and the second ground wire 33. It is formed and the resists 41, 42, and 43 are removed.
　図４ｃは、本実施形態に係る量子回路１１の製造プロセスの第３ステップを示す図である。量子回路１１の製造プロセスの第３ステップでは、マスク６０を用いた斜め蒸着により、アルミニウム等の金属をシグナル線３２に蒸着する。 FIG. 4c is a diagram showing a third step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the third step of the manufacturing process of the quantum circuit 11, a metal such as aluminum is vapor-deposited on the signal line 32 by diagonal vapor deposition using the mask 60.
　図４ｄは、本実施形態に係る量子回路１１の製造プロセスの第４ステップを示す図である。量子回路１１の製造プロセスの第４ステップでは、斜め蒸着されたアルミニウム層５０を自然酸化させ、酸化アルミニウム層５１を形成する。ここで、酸化アルミニウム層５１は絶縁層である。 FIG. 4d is a diagram showing a fourth step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the fourth step of the manufacturing process of the quantum circuit 11, the obliquely vapor-deposited aluminum layer 50 is naturally oxidized to form the aluminum oxide layer 51. Here, the aluminum oxide layer 51 is an insulating layer.
　図４ｅは、本実施形態に係る量子回路１１の製造プロセスの第５ステップを示す図である。量子回路１１の製造プロセスの第５ステップでは、マスク６１を用いた斜め蒸着により、アルミニウム等の金属を酸化アルミニウム層５１及びシグナル線３２に蒸着する。 FIG. 4e is a diagram showing a fifth step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the fifth step of the manufacturing process of the quantum circuit 11, a metal such as aluminum is vapor-deposited on the aluminum oxide layer 51 and the signal line 32 by diagonal vapor deposition using the mask 61.
　図４ｆは、本実施形態に係る量子回路１１の製造プロセスの第６ステップを示す図である。量子回路１１の製造プロセスの第６ステップでは、アルミニウム層５２が酸化アルミニウム層５１の上に形成され、ジョセフソン接合が形成される。 FIG. 4f is a diagram showing a sixth step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the sixth step of the manufacturing process of the quantum circuit 11, the aluminum layer 52 is formed on the aluminum oxide layer 51 to form a Josephson junction.
　図４ｇは、本実施形態に係る量子回路１１の製造プロセスの第７ステップを示す図である。量子回路１１の製造プロセスの第７ステップでは、マスク６２を用いたスパッタ法等によって、第１グランド線３１及び第２グランド線３３の上に絶縁層又は金属層を堆積させ、第１遮蔽物１５ａ及び第２遮蔽物１５ｂを形成する。他、化学気相成長法等を用いてもよい。 FIG. 4g is a diagram showing the seventh step of the manufacturing process of the quantum circuit 11 according to the present embodiment. In the seventh step of the manufacturing process of the quantum circuit 11, an insulating layer or a metal layer is deposited on the first ground wire 31 and the second ground wire 33 by a sputtering method or the like using a mask 62, and the first shield 15a is deposited. And the second shield 15b is formed. Alternatively, a chemical vapor deposition method or the like may be used.
　このように、導波路１２は、それぞれグランド線３１，３３及びシグナル線３２を含み、遮蔽物１５は、グランド線３１，３３上に設けられていてよい。遮蔽物１５をグランド線３１，３３上に設けることで、遮蔽物１５の高さをシグナル線３２より十分に高くし、シグナル線３２から漏れる電磁場を遮蔽することができる。 As described above, the waveguide 12 includes the ground lines 31 and 33 and the signal line 32, respectively, and the shield 15 may be provided on the ground lines 31 and 33, respectively. By providing the shield 15 on the ground lines 31 and 33, the height of the shield 15 can be made sufficiently higher than the signal line 32, and the electromagnetic field leaking from the signal line 32 can be shielded.
　シグナル線３２の幅をｓと表し、シグナル線３２とグランド線３１の間の距離（シグナル線３２とグランド線３３の間の距離）をｇと表すとき、グランド線３１，３３の幅をｓ＋ｇ以上として、グランド線３１，３３上に遮蔽物１５を設けることで、電磁場をより効率的に遮蔽することができる。 When the width of the signal line 32 is expressed as s and the distance between the signal line 32 and the ground line 31 (distance between the signal line 32 and the ground line 33) is expressed as g, the width of the ground lines 31 and 33 is s + g or more. Therefore, by providing the shield 15 on the ground wires 31 and 33, the electromagnetic field can be shielded more efficiently.
　また、シグナル線３２の中央に中心を有する半径ｓ＋ｇの仮想円と交差するように遮蔽物１５を設けることで、電磁場をより効率的に遮蔽することができる。 Further, by providing the shield 15 so as to intersect the virtual circle having a radius s + g having a center at the center of the signal line 32, the electromagnetic field can be shielded more efficiently.
［第２実施形態］
　図５ａは、本発明の第２実施形態に係る量子回路システム１０ａの構成の一例を示す斜視図である。また、図５ｂは、本実施形態に係る量子回路システム１０ａの構成の詳細を示す図である。本実施形態に係る量子回路システム１０ａは、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄを備える。また、量子回路システム１０ａは、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄの量子状態を読み出すための読出回路１４を備える。 [Second Embodiment]
FIG. 5a is a perspective view showing an example of the configuration of the quantum circuit system 10a according to the second embodiment of the present invention. Further, FIG. 5b is a diagram showing details of the configuration of the quantum circuit system 10a according to the present embodiment. The quantum circuit system 10a according to the present embodiment includes a first quantum circuit 11a, a second quantum circuit 11b, a third quantum circuit 11c, and a fourth quantum circuit 11d. Further, the quantum circuit system 10a includes a read circuit 14 for reading the quantum states of the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d.
　量子回路システム１０ａは、第１量子回路１１ａに電気的に接続された第１同軸ケーブル１１３ａと、読出回路１４に電気的に接続された読出同軸ケーブル１４ａとを備える。同様に、量子回路システム１０ａは、第２量子回路１１ｂに電気的に接続された第２同軸ケーブル、第３量子回路１１ｃに電気的に接続された第３同軸ケーブル及び第４量子回路１１ｄに電気的に接続された第４同軸ケーブルを備える（不図示）。ここで、第１同軸ケーブル１１３ａは、高周波電力を伝搬させて第１量子回路１１ａを所定の量子状態に変化させる第１高周波電源に電気的に接続される。また、第２同軸ケーブル、第３同軸ケーブル及び第４同軸ケーブルは、それぞれ、高周波電力を伝搬させて第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄを所定の量子状態に変化させる第２高周波電源、第３高周波電源及び第４高周波電源に電気的に接続される。 The quantum circuit system 10a includes a first coaxial cable 113a electrically connected to the first quantum circuit 11a and a read coaxial cable 14a electrically connected to the read circuit 14. Similarly, the quantum circuit system 10a is electrically connected to the second coaxial cable electrically connected to the second quantum circuit 11b, the third coaxial cable electrically connected to the third quantum circuit 11c, and the fourth quantum circuit 11d. A fourth coaxial cable is provided (not shown). Here, the first coaxial cable 113a is electrically connected to a first high-frequency power source that propagates high-frequency power to change the first quantum circuit 11a into a predetermined quantum state. Further, the second coaxial cable, the third coaxial cable, and the fourth coaxial cable propagate high-frequency power to change the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d into predetermined quantum states, respectively. It is electrically connected to the second high frequency power supply, the third high frequency power supply, and the fourth high frequency power supply.
　本実施形態において、第１同軸ケーブル１１３ａ、第２同軸ケーブル、第３同軸ケーブル及び第４同軸ケーブルは、本発明の第１導波路、第２導波路、第３導波路及び第４導波路に相当する。本実施形態において、第１導波路及び第２導波路は、第１量子回路１１ａ及び第２量子回路１１ｂが形成される主面と交差する方向に延伸している。より具体的には、第１導波路及び第２導波路は、第１量子回路１１ａ及び第２量子回路１１ｂが形成される主面と略直行する方向に延伸している。 In the present embodiment, the first coaxial cable 113a, the second coaxial cable, the third coaxial cable, and the fourth coaxial cable are used in the first waveguide, the second waveguide, the third waveguide, and the fourth coaxial cable of the present invention. Equivalent to. In the present embodiment, the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed. More specifically, the first waveguide and the second waveguide extend in a direction substantially orthogonal to the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed.
　また、量子回路システム１０ａは、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄが形成される主面に設けられた第１遮蔽物１５ａ、第２遮蔽物１５ｂ、第３遮蔽物１５ｃ及び第４遮蔽物１５ｄを備える。このような構成により、量子回路１１の量子状態を読み出す場合における複数の線路の干渉を抑えたり、量子回路１１間の相互作用の干渉を抑えたりすることができる。なお、第１遮蔽物１５ａ、第２遮蔽物１５ｂ、第３遮蔽物１５ｃ及び第４遮蔽物１５ｄは、図５ａに実線で示す配置ではなく、破線で示す配置で設けられてもよいし、実線で示す配置と破線で示す配置の両方で設けられてもよい。 Further, the quantum circuit system 10a includes a first shield 15a and a second shield provided on the main surface on which the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d are formed. The object 15b, the third shield 15c, and the fourth shield 15d are provided. With such a configuration, it is possible to suppress the interference of a plurality of lines when reading the quantum state of the quantum circuit 11, and to suppress the interference of the interaction between the quantum circuits 11. The first shield 15a, the second shield 15b, the third shield 15c, and the fourth shield 15d may be provided in the arrangement shown by the broken line instead of the arrangement shown by the solid line in FIG. 5a, or the solid line. It may be provided in both the arrangement shown by and the arrangement shown by the broken line.
［第３実施形態］
　図６ａは、本発明の第３実施形態に係る量子回路システム１０ｂの構成の一例を示す上面図である。また、図６ｂは、本実施形態に係る量子回路システム１０ｂの構成を示す上面図であり、図６ｃは、本実施形態に係る量子回路システム１０ｂの構成を示す断面図である。なお、図６ａでは、第３金属層１５３を図示せず、第３金属層１５３に覆われている第１結合線路１７及び第２結合線路１８を図示している。また、図６ｃは、図６ｂに示すＶＩｃ－ＶＩｃ線における断面図である。 [Third Embodiment]
FIG. 6a is a top view showing an example of the configuration of the quantum circuit system 10b according to the third embodiment of the present invention. Further, FIG. 6b is a top view showing the configuration of the quantum circuit system 10b according to the present embodiment, and FIG. 6c is a cross-sectional view showing the configuration of the quantum circuit system 10b according to the present embodiment. Note that FIG. 6a does not show the third metal layer 153, but shows the first coupling line 17 and the second coupling line 18 covered by the third metal layer 153. Further, FIG. 6c is a cross-sectional view taken along the line VIc-VIc shown in FIG. 6b.
　本実施形態に係る量子回路システム１０ａは、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄを備える。また、量子回路システム１０ａは、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄの量子状態を読み出すための読出回路１４を備える。 The quantum circuit system 10a according to the present embodiment includes a first quantum circuit 11a, a second quantum circuit 11b, a third quantum circuit 11c, and a fourth quantum circuit 11d. Further, the quantum circuit system 10a includes a read circuit 14 for reading the quantum states of the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d.
　量子回路システム１０ａは、第１量子回路１１ａに電気的に接続された第１同軸ケーブルと、読出回路１４に電気的に接続された読出同軸ケーブルとを備える（不図示）。同様に、量子回路システム１０ａは、第２量子回路１１ｂに電気的に接続された第２同軸ケーブル、第３量子回路１１ｃに電気的に接続された第３同軸ケーブル及び第４量子回路１１ｄに電気的に接続された第４同軸ケーブルを備える（不図示）。ここで、第１同軸ケーブルは、高周波電力を伝搬させて第１量子回路１１ａを所定の量子状態に変化させる第１高周波電源に電気的に接続される。また、第２同軸ケーブル、第３同軸ケーブル及び第４同軸ケーブルは、それぞれ、高周波電力を伝搬させて第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄを所定の量子状態に変化させる第２高周波電源、第３高周波電源及び第４高周波電源に電気的に接続される。 The quantum circuit system 10a includes a first coaxial cable electrically connected to the first quantum circuit 11a and a read coaxial cable electrically connected to the read circuit 14 (not shown). Similarly, the quantum circuit system 10a is electrically connected to the second coaxial cable electrically connected to the second quantum circuit 11b, the third coaxial cable electrically connected to the third quantum circuit 11c, and the fourth quantum circuit 11d. A fourth coaxial cable is provided (not shown). Here, the first coaxial cable is electrically connected to a first high-frequency power source that propagates high-frequency power to change the first quantum circuit 11a into a predetermined quantum state. Further, the second coaxial cable, the third coaxial cable, and the fourth coaxial cable propagate high-frequency power to change the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d into predetermined quantum states, respectively. It is electrically connected to the second high frequency power supply, the third high frequency power supply, and the fourth high frequency power supply.
　本実施形態において、第１同軸ケーブル、第２同軸ケーブル、第３同軸ケーブル及び第４同軸ケーブルは、本発明の第１導波路、第２導波路、第３導波路及び第４導波路に相当する。本実施形態において、第１導波路及び第２導波路は、第１量子回路１１ａ及び第２量子回路１１ｂが形成される主面と交差する方向に延伸している。より具体的には、第１導波路及び第２導波路は、第１量子回路１１ａ及び第２量子回路１１ｂが形成される主面と略直行する方向に延伸している。 In the present embodiment, the first coaxial cable, the second coaxial cable, the third coaxial cable, and the fourth coaxial cable correspond to the first waveguide, the second waveguide, the third waveguide, and the fourth coaxial cable of the present invention. To do. In the present embodiment, the first waveguide and the second waveguide extend in a direction intersecting the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed. More specifically, the first waveguide and the second waveguide extend in a direction substantially orthogonal to the main surface on which the first quantum circuit 11a and the second quantum circuit 11b are formed.
　また、量子回路システム１０ｂは、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄが形成される主面から離間した面に設けられている遮蔽物を備える。より具体的には、量子回路システム１０ｂは、量子回路１１が形成される主面から離間した面に設けられている第３金属層１５３を備える。このような構成により、量子回路１１が形成される主面において生じた漏れ電磁場を遮蔽し、干渉を防ぐことができる。 Further, the quantum circuit system 10b includes a shield provided on a surface separated from the main surface on which the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d are formed. .. More specifically, the quantum circuit system 10b includes a third metal layer 153 provided on a surface separated from the main surface on which the quantum circuit 11 is formed. With such a configuration, it is possible to shield the leaking electromagnetic field generated on the main surface on which the quantum circuit 11 is formed and prevent interference.
　また、本実施形態において、遮蔽物は、第１量子回路１１ａ及び第２量子回路１１ｂを電磁気的に接続する第１結合線路１７を覆うように、主面の法線方向において、第１結合線路１７よりも高い位置に設けられている。本実施形態では、第１結合線路１７は、第１量子回路１１ａ及び第２量子回路１１ｂと、第２量子回路１１ｂ及び第３量子回路１１ｃと、第３量子回路１１ｃ及び第４量子回路１１ｄと、第４量子回路１１ｄ及び第１量子回路１１ａと、をそれぞれ電磁気的に接続する。そして、遮蔽物である第３金属層１５３は、第１結合線路１７を覆うように設けられている。このような構成により、第１結合線路１７において生じた漏れ電磁場を遮蔽し、他の回路との干渉を防ぐことができる。 Further, in the present embodiment, the shield covers the first coupling line 17 that electromagnetically connects the first quantum circuit 11a and the second quantum circuit 11b so as to cover the first coupling line 17 in the normal direction of the main surface. It is provided at a position higher than 17. In the present embodiment, the first coupling line 17 includes the first quantum circuit 11a and the second quantum circuit 11b, the second quantum circuit 11b and the third quantum circuit 11c, and the third quantum circuit 11c and the fourth quantum circuit 11d. , The fourth quantum circuit 11d and the first quantum circuit 11a are electrically connected to each other. The third metal layer 153, which is a shield, is provided so as to cover the first coupling line 17. With such a configuration, it is possible to shield the leaking electromagnetic field generated in the first coupling line 17 and prevent interference with other circuits.
　また、本実施形態において、遮蔽物は、第１量子回路１１ａ及び第２量子回路１１ｂと読出回路１４とを電磁気的に接続する第２結合線路１８を覆うように、主面の法線方向において、第２結合線路１８よりも高い位置に設けられている。本実施形態では、第２結合線路１８は、第１量子回路１１ａ及び読出回路１４と、第２量子回路１１ｂ及び読出回路１４と、第３量子回路１１ｃ及び読出回路１４と、第４量子回路１１ｄ及び読出回路１４と、をそれぞれ電磁気的に接続する。そして、遮蔽物である第３金属層１５３は、第２結合線路１８を覆うように設けられている。このような構成により、第２結合線路１８において生じた漏れ電磁場を遮蔽し、他の回路との干渉を防ぐことができる。 Further, in the present embodiment, the shield covers the second coupling line 18 that electromagnetically connects the first quantum circuit 11a and the second quantum circuit 11b and the reading circuit 14, in the normal direction of the main surface. , Is provided at a position higher than the second coupling line 18. In the present embodiment, the second coupling line 18 includes a first quantum circuit 11a and a read circuit 14, a second quantum circuit 11b and a read circuit 14, a third quantum circuit 11c and a read circuit 14, and a fourth quantum circuit 11d. And the read circuit 14 are electromagnetically connected to each other. The third metal layer 153, which is a shield, is provided so as to cover the second coupling line 18. With such a configuration, it is possible to shield the leaking electromagnetic field generated in the second coupling line 18 and prevent interference with other circuits.
　本実施形態の遮蔽物は、第１金属層１５１、第２金属層１５２及び第３金属層１５３を含む。第１金属層１５１は、第１量子回路１１ａ、第２量子回路１１ｂ、第３量子回路１１ｃ及び第４量子回路１１ｄを囲むように矩形状に形成されている。また、第２金属層１５２は、２つの量子回路１１と読出回路１４とで形成される三角領域に三角形状に形成されている。第３金属層１５３は、第１金属層１５１と第２金属層１５２にまたがる部分と、第２金属層１５２にまたがる部分とを含む。第３金属層１５３のうち第１金属層１５１と第２金属層１５２にまたがる部分は、第１結合線路１７を覆う。また、第３金属層１５３のうち第２金属層１５２にまたがる部分は、第２結合線路１８を覆う。なお、第２金属層１５２は、図６ａに実線で示す配置ではなく、破線で示す配置で設けられてもよいし、実線で示す配置と破線で示す配置の両方で設けられてもよい。 The shield of the present embodiment includes the first metal layer 151, the second metal layer 152, and the third metal layer 153. The first metal layer 151 is formed in a rectangular shape so as to surround the first quantum circuit 11a, the second quantum circuit 11b, the third quantum circuit 11c, and the fourth quantum circuit 11d. Further, the second metal layer 152 is formed in a triangular shape in a triangular region formed by the two quantum circuits 11 and the read circuit 14. The third metal layer 153 includes a portion that straddles the first metal layer 151 and the second metal layer 152, and a portion that straddles the second metal layer 152. The portion of the third metal layer 153 that straddles the first metal layer 151 and the second metal layer 152 covers the first coupling line 17. Further, the portion of the third metal layer 153 that straddles the second metal layer 152 covers the second coupling line 18. The second metal layer 152 may be provided in an arrangement shown by a broken line instead of the arrangement shown by the solid line in FIG. 6a, or may be provided in both the arrangement shown by the solid line and the arrangement shown by the broken line.
　以上説明した実施形態は、本発明の理解を容易にするためのものであり、本発明を限定して解釈するためのものではない。実施形態が備える各要素並びにその配置、材料、条件、形状及びサイズ等は、例示したものに限定されるわけではなく適宜変更することができる。また、異なる実施形態で示した構成同士を部分的に置換し又は組み合わせることが可能である。 The embodiments described above are for facilitating the understanding of the present invention, and are not for limiting and interpreting the present invention. Each element included in the embodiment and its arrangement, material, condition, shape, size, and the like are not limited to those exemplified, and can be changed as appropriate. In addition, the configurations shown in different embodiments can be partially replaced or combined.
　１０…量子回路システム、１０ａ…第２実施形態に係る量子回路システム、１０ｂ…第３実施形態に係る量子回路システム、１１ａ…第１量子回路、１１ｂ…第２量子回路、１１ｃ…第３量子回路、１１ｄ…第４量子回路、１２ａ…第１導波路、１２ｂ…第２導波路、１２ｃ…第３導波路、１２ｄ…第４導波路、１４…読出回路、１４ａ…読出同軸ケーブル、１３ａ…第１高周波電源、１３ｂ…第２高周波電源、１３ｃ…第３高周波電源、１３ｄ…第４高周波電源、１４…読出回路、１５ａ…第１遮蔽物、１５ｂ…第２遮蔽物、１５ｃ…第３遮蔽物、１７…第１結合線路、１８…第２結合線路、２０…ユーザ端末、３０…金属層、３１…第１グランド線、３２…シグナル線、３３…第２グランド線、４１，４２，４３…レジスト、５０，５２…アルミニウム層、５１…酸化アルミニウム層、６０，６１，６２…マスク、１００…量子計算システム、１１１…トランズモン、１１２…共振器、１１３ａ…第１同軸ケーブル、１５１…第１金属層、１５２…第２金属層、１５３…第３金属層 10 ... Quantum circuit system, 10a ... Quantum circuit system according to the second embodiment, 10b ... Quantum circuit system according to the third embodiment, 11a ... First quantum circuit, 11b ... Second quantum circuit, 11c ... Third quantum circuit , 11d ... 4th quantum circuit, 12a ... 1st waveguide, 12b ... 2nd waveguide, 12c ... 3rd waveguide, 12d ... 4th waveguide, 14 ... Read circuit, 14a ... Read coaxial cable, 13a ... 1 high frequency power supply, 13b ... second high frequency power supply, 13c ... third high frequency power supply, 13d ... fourth high frequency power supply, 14 ... reading circuit, 15a ... first shield, 15b ... second shield, 15c ... third shield , 17 ... 1st coupling line, 18 ... 2nd coupling line, 20 ... user terminal, 30 ... metal layer, 31 ... 1st ground line, 32 ... signal line, 33 ... 2nd ground line, 41, 42, 43 ... Resist, 50, 52 ... Aluminum layer, 51 ... Aluminum oxide layer, 60, 61, 62 ... Mask, 100 ... Quantum computing system, 111 ... Transmon, 112 ... Resonator, 113a ... First coaxial cable, 151 ... First metal Layer, 152 ... 2nd metal layer, 153 ... 3rd metal layer

Claims (7)

  1. 　少なくとも２つの量子状態を表すことができる第１量子回路及び第２量子回路と、
    　前記第１量子回路に電磁気的に接続された第１導波路及び前記第２量子回路に電磁気的に接続された第２導波路と、
    　誘電体又は金属で構成され、前記第１量子回路及び前記第２量子回路が形成されている主面の法線方向において、前記第１導波路及び前記第２導波路の高さよりも高い遮蔽物と、
    　を備える量子回路システム。     A first quantum circuit and a second quantum circuit that can represent at least two quantum states,
    A first waveguide electromagnetically connected to the first quantum circuit and a second waveguide electromagnetically connected to the second quantum circuit.
    A shield made of a dielectric or metal and higher than the height of the first waveguide and the second waveguide in the normal direction of the main surface on which the first quantum circuit and the second quantum circuit are formed. When,
    Quantum circuit system with.
  2. 　前記遮蔽物は、前記第１導波路及び前記第２導波路に沿って延伸している、
    　請求項１に記載の量子回路システム。     The shield extends along the first waveguide and the second waveguide.
    The quantum circuit system according to claim 1.
  3. 　前記第１導波路及び前記第２導波路は、それぞれグランド線及びシグナル線を含み、
    　前記遮蔽物は、前記グランド線上に設けられている、
    　請求項１又は２に記載の量子回路システム。     The first waveguide and the second waveguide include a ground line and a signal line, respectively.
    The shield is provided on the ground line,
    The quantum circuit system according to claim 1 or 2.
  4. 　前記第１導波路及び前記第２導波路は、前記第１量子回路及び前記第２量子回路が形成される主面と交差する方向に延伸し、
    　前記遮蔽物は、前記第１量子回路及び前記第２量子回路が形成される主面に設けられている、
    　請求項１に記載の量子回路システム。     The first waveguide and the second waveguide are extended in a direction intersecting the main surface on which the first quantum circuit and the second quantum circuit are formed.
    The shield is provided on the main surface on which the first quantum circuit and the second quantum circuit are formed.
    The quantum circuit system according to claim 1.
  5. 　前記第１導波路及び前記第２導波路は、前記第１量子回路及び前記第２量子回路が形成される主面と交差する方向に延伸し、
    　前記遮蔽物は、前記第１量子回路及び前記第２量子回路が形成される主面から離間した面に設けられている、
    　請求項１に記載の量子回路システム。     The first waveguide and the second waveguide are extended in a direction intersecting the main surface on which the first quantum circuit and the second quantum circuit are formed.
    The shield is provided on a surface separated from the main surface on which the first quantum circuit and the second quantum circuit are formed.
    The quantum circuit system according to claim 1.
  6. 　前記遮蔽物は、前記第１量子回路及び前記第２量子回路を電磁気的に接続する第１結合線路を覆うように、前記主面の法線方向において、前記第１結合線路よりも高い位置に設けられている、
    　請求項５に記載の量子回路システム。     The shield is located higher than the first coupling line in the normal direction of the main surface so as to cover the first coupling line that electromagnetically connects the first quantum circuit and the second quantum circuit. Provided,
    The quantum circuit system according to claim 5.
  7. 　前記遮蔽物は、前記第１量子回路及び前記第２量子回路と読出回路とを電磁気的に接続する第２結合線路を覆うように、前記主面の法線方向において、前記第２結合線路よりも高い位置に設けられている、
    　請求項５又は６に記載の量子回路システム。     The shield is provided from the second coupling line in the normal direction of the main surface so as to cover the first quantum circuit and the second coupling line that electromagnetically connects the second quantum circuit and the reading circuit. Is also installed at a high position,
    The quantum circuit system according to claim 5 or 6.
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