WO2021025052A1 - Large-size thin-film deposition substrate and method for manufacturing same, segmented thin-film deposition substrate and method for manufacturing same, and production management method and production management system for segmented thin-film deposition substrate - Google Patents

Abstract

Provided is a method for manufacturing a large-size thin-film deposition substrate with which it is possible to reduce manufacturing costs of a large-size thin-film deposition substrate and segmented thin-film deposition substrates which include identification marks, and to improve precision in reading said identification marks. The method for manufacturing a large-size thin-film deposition substrate comprises: a marking step of marking at least one identification mark M for each segmented region which is segmented by a dicing line L on one primary surface side of a pre-dicing large-size substrate 11; and a thin-film deposition step of generating a large-size thin-film deposition substrate 2 by thin-film deposition on the large-size substrate 11 except for the position of the identification mark M. In the marking step, one marking device with a markable region A1 smaller than the large-size substrate 11 is used to simultaneously mark all of the identification marks M on the large-size substrate 11 such that when a plurality of segmented thin-film deposition substrates obtained by dicing the large-size thin-film deposition substrate are stacked after dicing, the identification marks on the plurality of segmented thin-film deposition substrates overlap.

Description

Large format film-forming substrate and its manufacturing method, split film-forming substrate and its manufacturing method, production control method and production control system for split film-forming substrate

The present invention relates to a large-format film-forming substrate and a manufacturing method thereof, a split film-forming substrate and a manufacturing method thereof, a production control method for a split film-forming substrate, and a production control system.

For example, in order to manage production history information (for example, manufacturing conditions) of a semiconductor device using a semiconductor substrate (wafer), a technique for printing an identification mark (for example, a unique identifier of a divided substrate after dicing) on the semiconductor substrate is available. It is known (see, for example, Patent Documents 1 and 2). Patent Document 1 describes that when the semiconductor substrate is divided into four, the four identification marks are printed at rotationally symmetric positions. Patent Document 2 describes that when the semiconductor substrate is divided into four, the four identification marks are printed at symmetrical positions in the vertical and horizontal directions.

JP-A-2002-110491 Japanese Unexamined Patent Publication No. 2003-44119

In Patent Document 2, two identification marks are printed twice at the same time using two marking devices during transportation. Note that Patent Document 1 does not describe a method for printing identification information.

From the viewpoint of manufacturing cost, it is preferable to print all the identification marks at once using one marking device. However, depending on the position of the identification information, the marking range including all the identification information becomes large, the marking device becomes large, and the device introduction cost increases.

In addition, it is desired to improve the reading accuracy of the identification mark by adopting a more complicated identification mark such as a two-dimensional barcode.

INDUSTRIAL APPLICABILITY According to the present invention, a large-format film-forming substrate including an identification mark and a divided film-forming substrate can be manufactured at a low cost, and the reading accuracy of the identification mark can be improved. It is an object of the present invention to provide a film substrate and a manufacturing method thereof, a production control method for a split film-forming substrate, and a production control system.

The method for manufacturing a large-format film-forming substrate according to the present invention is a method for manufacturing a large-format film-forming substrate formed on a large-format substrate before dying, and is divided by a dying line on one main surface side of the large-format substrate. A marking step of marking at least one identification mark for each divided region, and a film forming step of forming the large-format film-forming substrate on the large-format substrate excluding the position of the identification mark. In the marking step, when a plurality of divided film-forming substrates formed by dying the large-format film-forming substrate are stacked after dying, the identification marks on the plurality of divided film-forming substrates are overlapped with each other. All the identification marks on the large-format substrate are simultaneously marked by using one marking device having a marking range smaller than that of the large-format substrate.

The method for manufacturing a split film-forming substrate according to the present invention includes the above-mentioned method for manufacturing a large-format film-forming substrate, and is a method for manufacturing the plurality of divided film-forming substrates obtained by dicing the large-format film-forming substrate. The dicing step of producing the plurality of divided film-forming substrates by dicing the large-format film-forming substrate along the dicing line is included.

The method for controlling the production of the divided film-forming substrate according to the present invention includes the above-mentioned method for manufacturing the divided film-forming substrate, and is a method for controlling the production of the plurality of divided film-forming substrates, the marking step, the film forming step, and the process. The production information is obtained by reading the identification mark for each of the plurality of divided film-forming substrates and the control process in which at least one of the information of the dicing process is used as the production information and is managed in association with the information indicated by the identification mark. Including a reading step of reading.

The large-format film-forming substrate according to the present invention is a large-format film-forming substrate manufactured by the above-mentioned method for manufacturing a large-format film-forming substrate.

The split film-forming substrate according to the present invention is a split film-forming substrate manufactured by the above-mentioned method for manufacturing a split film-forming substrate.

The production control system for the split film formation substrate according to the present invention is a production control system for the split film formation substrate for the above-mentioned production control method for the split film formation substrate, and is a dicing line on one main surface side of the large format substrate. A marking device that marks at least one identification mark for each divided region divided by, and a film formation on the large format substrate excluding the position of the identification mark to generate a large format film formation substrate. A dicing device that generates a plurality of divided film-forming substrates by dicing the device and the large-format film-forming substrate along the dicing line, information at the time of marking by the marking device, and film-forming by the film-forming device. A management device that manages the information and at least one of the information at the time of dicing by the dicing device as production information in association with the information indicated by the identification mark, and the identification mark for each of the plurality of divided film-forming substrates. The marking device includes a reading device for reading the production information by reading, and the marking device is formed by stacking a plurality of divided film-forming substrates formed by dicing the large-format film-forming substrate after dicing. All the identification marks on the large format substrate are simultaneously marked by using one marking device having a marking range smaller than that of the large format substrate so that the identification marks on the film substrate overlap.

According to the present invention, it is possible to reduce the manufacturing cost of the large-format film-forming substrate including the identification mark and the divided film-forming substrate, and to improve the reading accuracy of the identification mark.

It is sectional drawing which shows an example (double-sided electrode type solar cell) of the solar cell which concerns on this embodiment. It is sectional drawing which shows another example (back surface electrode type solar cell) of the solar cell which concerns on this embodiment. It is a figure which shows the production control system of the work-in-process of the solar cell which concerns on this embodiment, that is, the film-deposited split semiconductor substrate (divided film-deposited substrate) after dicing. The solar cell according to the present embodiment, that is, the solar cell including a method for manufacturing a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-process of a battery, that is, the pre-deposited split semiconductor substrate (divided film-forming substrate) after dicing. The solar cell according to the present embodiment, that is, the solar cell including a method for manufacturing a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress product of a battery, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing. The solar cell according to the present embodiment, that is, the solar cell including a method for manufacturing a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the reading process in the production control method of the work-in-process of a battery, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing. A method for manufacturing a solar cell work-in-progress product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-progress article of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-forming substrate) after dicing. A method for manufacturing a solar cell in-process product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) that has been formed before dicing and a split semiconductor substrate (divided film-forming substrate) that has been formed after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress product of a solar cell, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing. A method for manufacturing a solar cell work-in-progress product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-progress article of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-forming substrate) after dicing. A method for manufacturing a solar cell in-process product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) that has been formed before dicing and a split semiconductor substrate (divided film-forming substrate) that has been formed after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress product of a solar cell, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing. A method for manufacturing a work-in-process of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the reading process in the production control method of the work-in-process of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-deposited substrate) after dicing. A method for manufacturing a solar cell work-in-progress product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-progress article of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-forming substrate) after dicing. A method for manufacturing a solar cell in-process product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) that has been formed before dicing and a split semiconductor substrate (divided film-forming substrate) that has been formed after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress product of a solar cell, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing. A method for manufacturing a solar cell work-in-progress product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-progress article of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-forming substrate) after dicing. A method for manufacturing a solar cell in-process product according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) that has been formed before dicing and a split semiconductor substrate (divided film-forming substrate) that has been formed after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress product of a solar cell, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing.

Hereinafter, as an example of the embodiment of the present invention with reference to the attached drawings, a work-in-process product of a solar cell (large format film-forming substrate, a split film-forming substrate), a manufacturing method thereof, and a work-in-process product of a solar cell (divided film-forming substrate) The production control method and the production control system of the above will be described. In addition, the same reference numerals are given to the same or corresponding parts in each drawing. Further, for convenience, hatching, member codes, etc. may be omitted, but in such cases, other drawings shall be referred to.

FIG. 1 is a cross-sectional view showing an example of a solar cell according to the present embodiment (double-sided electrode type solar cell), and FIG. 2 is another example of the solar cell according to the present embodiment (back surface electrode type solar cell). ) Is a cross-sectional view.

(Double-sided electrode type solar cell)
As shown in FIG. 1, in the double-sided electrode type solar cell 1, the semiconductor substrate 11 and the first intrinsic semiconductor layer 23, the first, which are sequentially laminated (formed) on the light receiving surface (one main surface) side of the semiconductor substrate 11. It includes a conductive semiconductor layer 25, a first transparent electrode layer 27, and a first metal electrode layer 28. Further, the solar cell 1 has a second intrinsic semiconductor layer 33, a second conductive semiconductor layer 35, a second transparent electrode layer 37, and a second transparent electrode layer 37, which are sequentially laminated (formed) on the back surface (the other main surface) side of the semiconductor substrate 11. A metal electrode layer 38 is provided.

In the case of such a double-sided electrode type solar cell 1, the in-process product of the solar cell described later, that is, the large-format semiconductor substrate (large-format semiconductor substrate) 2 before dying and the split semiconductor substrate (divided) after dying. The film-forming substrate) 3 has, for example, a first intrinsic semiconductor layer 23, a first conductive semiconductor layer 25, and a first transparent electrode layer 27 formed on the light receiving surface side of the semiconductor substrate 11, and on the back surface side of the semiconductor substrate 11. This is a substrate on which the second intrinsic semiconductor layer 33, the second conductive semiconductor layer 35, and the second transparent electrode layer 37 are formed.

(Back electrode type solar cell)
As shown in FIG. 2, the back electrode type solar cell 1 includes a semiconductor substrate 11, a third intrinsic semiconductor layer 3 laminated (formed) in order on the light receiving surface (one main surface) side of the semiconductor substrate 11, and antireflection. It includes a layer 15. Further, the solar cell 1 includes a first intrinsic semiconductor layer 23, a first conductive semiconductor layer 25, a first transparent electrode layer 27, and a first, which are sequentially laminated on a part of the back surface (the other main surface) side of the semiconductor substrate 11. A metal electrode layer 28 is provided. Further, the solar cell 1 includes a second intrinsic semiconductor layer 33, a second conductive semiconductor layer 35, a second transparent electrode layer 37, and a second metal electrode layer, which are sequentially laminated on the other part on the back surface side of the semiconductor substrate 11. 38 is provided.

In the case of such a back electrode type solar cell 1, the work-in-progress product of the solar cell, which will be described later, that is, the large-format semiconductor substrate (large-format semiconductor substrate) 2 before dying and the split semiconductor substrate (divided) after dying. In the film-forming substrate) 3, for example, the third intrinsic semiconductor layer 13 and the antireflection layer 15 are formed on the light receiving surface side of the semiconductor substrate 11, and the first intrinsic semiconductor layer 23 and the first conductivity are formed on the back surface side of the semiconductor substrate 11. This is a substrate on which the type semiconductor layer 25, the first transparent electrode layer 27, the second intrinsic semiconductor layer 33, the second conductive semiconductor layer 35, and the second transparent electrode layer 37 are formed.

In the following, the in-process product of the solar cell 1 shown in FIG. 1 or 2, that is, the film-formed large-format semiconductor substrate (large-format film-forming substrate) 2 before dicing and the film-formed split semiconductor substrate (divided film-forming substrate) after dicing. 3 and its manufacturing method will be described. In addition, a production control method and a production control system of the work-in-process of the solar cell 1, that is, the divided semiconductor substrate (divided film-deposited substrate) 3 after dicing will be described.

FIG. 3 is a diagram showing a production control system of a work-in-process of a solar cell according to the present embodiment, that is, a divided semiconductor substrate (divided film-deposited substrate) that has been formed into a film after dicing. FIG. 4A shows a work-in-process of a solar cell according to the present embodiment, that is, a method for manufacturing a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-process of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-forming substrate) after dicing. FIG. 4B shows a work-in-progress product of a solar cell according to the present embodiment, that is, a method for manufacturing a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress product of a solar cell, that is, the divided semiconductor substrate (divided film-forming substrate) which has been formed after dicing. FIG. 4C shows a work-in-process of a solar cell according to the present embodiment, that is, a method for manufacturing a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the reading process in the production control method of the work-in-process of a solar cell, that is, the pre-deposited split semiconductor substrate (divided film-deposited substrate) after dicing.

(production management system)
The production control system 100 shown in FIG. 3 is, for example, a system that manages production history information of a work-in-process product of the solar cell 1, that is, a film-deposited split semiconductor substrate (divided film-deposited substrate) 3 after dicing. The production control system 100 includes a marking device 110, a film forming device 120, a dicing device 130, a management device 140, and a reading device 150.

The marking device 110 is, for example, a marking device using a laser. The marking device 110 marks an identification mark on a large-format semiconductor substrate (for example, 6-inch М2 wafer: 156.75 mm × 156.75 mm) 11. Specifically, as shown in FIG. 4A, the marking device 110 is at least for each divided region divided by the pre-programmed dicing line L on one main surface side (for example, the back surface side) of the large format semiconductor substrate 11. Mark one identification mark M.

The marking range A1 of the marking device 110 is smaller than that of the large-format semiconductor substrate 11. In the example of FIG. 4A, the markable range A1 is 30 mm × 30 mm. One marking device 110 simultaneously marks all the identification marks M on the large-format semiconductor substrate 11.

Further, as shown in FIG. 4C, in the marking device 110, when a plurality of film-formed divided semiconductor substrates 3 are stacked after dicing by the dicing device 130 described later, the identification marks M on the plurality of film-formed divided semiconductor substrates 3 are displayed. A plurality of identification marks M are marked so as to overlap each other. In other words, the marking device 110 marks the identification mark M rotationally symmetrically with respect to the dicing line L within the marking possible range A1.

The identification mark M is arranged at a position where the distance from the dicing wire L is 15 mm or less and at the center of the large-format semiconductor substrate 11.

The identification mark M includes at least one of alphanumeric characters, figures, barcodes, two-dimensional barcodes, and the like. The identification mark M is a unique identifier of the divided semiconductor substrate 3 after dicing, a unique identifier of the large format semiconductor substrate 2 (or 11) before dicing, a position of the divided semiconductor substrate 3 on the large format semiconductor substrate 2 (or 11), and the like. including.

The film forming apparatus 120 is, for example, a CVD (chemical vapor deposition) apparatus or a PVD (physical vapor deposition) apparatus. The film forming apparatus 120 produces the film-formed large-format semiconductor substrate 2 by forming a film on the large-format semiconductor substrate 11 except for the position of the identification mark M.

For example, in the case of the double-sided electrode type solar cell 1 shown in FIG. 1, the film forming apparatus 120 has a first intrinsic semiconductor layer 23, a first conductive type semiconductor layer 25, and a first transparent electrode layer 27 on the light receiving surface side of the semiconductor substrate 11. The second intrinsic semiconductor layer 33, the second conductive semiconductor layer 35, and the second transparent electrode layer 37 are formed on the back surface side of the semiconductor substrate 11 except for the position of the identification mark.

On the other hand, for example, in the case of the back electrode type solar cell 1 shown in FIG. 2, the film forming apparatus 120 forms a third intrinsic semiconductor layer 3 and an antireflection layer 15 on the light receiving surface side of the semiconductor substrate 11 in this order, and forms the semiconductor substrate. A first intrinsic semiconductor layer 23, a first conductive semiconductor layer 25, and a first transparent electrode layer 27 are formed on a part of the back surface side of the semiconductor substrate 11 except for the position of the identification mark, and the back surface side of the semiconductor substrate 11 is formed. The second intrinsic semiconductor layer 33, the second conductive semiconductor layer 35, and the second transparent electrode layer 37 are formed on the other part except for the position of the identification mark.

The dicing device 130 is, for example, a dicing device using a laser. The dicing apparatus 130 generates a plurality of film-formed divided semiconductor substrates 3 by dicing the film-formed large-format semiconductor substrate 2 along the pre-programmed dicing line L.

The management device 140 uses at least one of the information at the time of marking by the marking device 110, the information at the time of film formation by the film forming apparatus 120, and the information at the time of dicing by the dicing device 130 as production history information, and the information indicated by the identification mark. Manage in association with.

The production history information at the time of marking by the marking device 110 includes marking conditions such as laser intensity, irradiation time, and marking position with respect to a large-format semiconductor substrate (for example, 109A, 109B, 109C, 109D). Examples of the production history information at the time of film formation by the film forming apparatus 120 include the film forming conditions of each layer and the film forming date and time. Examples of the production history information at the time of dicing by the dicing apparatus 130 include dicing conditions such as laser intensity, irradiation time, and position of the divided semiconductor substrate on the large-format semiconductor substrate.

The reading device 150 is, for example, a reading device using a laser. The reading device 150 reads the production history information associated with the information indicated by the identification mark M from the management device 140 by reading the identification mark for each of the plurality of film-formed divided semiconductor substrates 3.

(Production control method, manufacturing method)
Next, with reference to FIGS. 4A to 4C, the work-in-process of the solar cell 1 according to the present embodiment, that is, the film-formed large-format semiconductor substrate (large-format film-forming substrate) 2 before dicing and the film-deposited division after dicing. A method for controlling the production of the work-in-process of the solar cell 1, that is, the divided semiconductor substrate (divided film-forming substrate) 3 after dicing, including the method for manufacturing the semiconductor substrate (divided film-forming substrate) 3, will be described.

First, the large-format semiconductor substrate (for example, a 6-inch wafer) 11 is conveyed to the marking device 110 shown in FIG. As a result, as shown in FIG. 4A, at least one identification mark M is provided on one main surface side (for example, the back surface side) of the large format semiconductor substrate 11 for each division region divided by the pre-programmed dicing line L. Marking (marking process).

At this time, all the identification marks M on the large-format semiconductor substrate 11 are simultaneously marked by using one marking device 110 whose marking range A1 is smaller than that of the large-format semiconductor substrate 11. Further, as shown in FIG. 4C, when a plurality of film-formed divided semiconductor substrates 3 are stacked after the dicing step described later, a plurality of identification marks are overlapped so that the identification marks M on the plurality of film-formed divided semiconductor substrates 3 overlap. Mark M. In other words, the identification mark M is marked rotationally symmetrically with respect to the dicing line L within the markable range A1 of one marking device 110.

The identification mark M is arranged at a position where the distance from the dicing line L is 15 mm or less. Dicing with a laser deteriorates the characteristics of the diced end. According to the present embodiment, since the identification mark M is arranged at a position where the characteristics deteriorate due to dicing, it is possible to reduce the decrease in power generation efficiency caused by the identification mark M.

Further, the identification mark is arranged in the central portion of the large-format semiconductor substrate 11. As a result, the marking range A1 of the marking device 110 can be reduced, and the marking device 110 can be miniaturized.

Next, the large-format semiconductor substrate 11 is conveyed to the film forming apparatus 120 shown in FIG. As a result, the film is formed on the large-format semiconductor substrate 11 excluding the position of the identification mark M to generate the film-formed large-format semiconductor substrate 2 (deposition step).

For example, in the case of the double-sided electrode type solar cell 1 shown in FIG. 1, a first intrinsic semiconductor layer 23, a first conductive type semiconductor layer 25, and a first transparent electrode layer 27 are formed on the light receiving surface side of the semiconductor substrate 11 to form a semiconductor. A second intrinsic semiconductor layer 33, a second conductive semiconductor layer 35, and a second transparent electrode layer 37 are formed on the back surface side of the substrate 11 except for the position of the identification mark.

On the other hand, for example, in the case of the back electrode type solar cell 1 shown in FIG. 2, a third intrinsic semiconductor layer 3 and an antireflection layer 15 are sequentially formed on the light receiving surface side of the semiconductor substrate 11, and one of the back surfaces of the semiconductor substrate 11 is formed. The first intrinsic semiconductor layer 23, the first conductive semiconductor layer 25, and the first transparent electrode layer 27 are formed on the portion except for the position of the identification mark, and the other part on the back surface side of the semiconductor substrate 11 is formed. Except for the position of the identification mark, the second intrinsic semiconductor layer 33, the second conductive semiconductor layer 35, and the second transparent electrode layer 37 are formed.
(The above is the manufacturing method of the large-format film-forming substrate)

Next, the film-formed large-format semiconductor substrate 2 is conveyed to the dicing apparatus 130 shown in FIG. As a result, as shown in FIG. 4B, a plurality of film-formed divided semiconductor substrates 3 are generated by dicing the film-formed large-format semiconductor substrate 2 along the pre-programmed dicing line L (dicing step).
(The above is the manufacturing method of the split film-forming substrate)

Here, in each process described above, at least one of the information of each process is managed as production history information in association with the information indicated by the identification mark M (management process). For example, in the marking process, the identification mark M indicates marking conditions such as the laser intensity in the marking process, the irradiation time, and the marking position with respect to the large-format semiconductor substrate (for example, 109A, 109B, 109C, 109D) as production history information. Manage in association with information. Further, in the film forming process, the film forming conditions and the film forming date and time of each layer in the film forming process are managed as production history information in association with the information indicated by the identification mark M. Further, in the dicing step, dicing conditions such as the laser intensity in the dicing step, the irradiation time, and the position of the divided semiconductor substrate on the large-format semiconductor substrate are managed as production history information in association with the information indicated by the identification mark M.

Next, the film-deposited split semiconductor substrate 3 is conveyed to the reader 150 shown in FIG. As a result, the identification mark M is read for each of the plurality of film-formed divided semiconductor substrates 3, and the production history information associated with the information indicated by the identification mark M is read from the management device 140 (reading step).

As described above, according to the method for manufacturing the large-format film-forming substrate 2 of the present embodiment, the method for manufacturing the split film-forming substrate 3, and the production control method for the divided film-forming substrate 3, one marking device is used in the marking process. The 110 is used to simultaneously mark all the identification marks M on the large-format substrate 11, and the marking range A1 of the marking device 110 is smaller than that of the large-format substrate 11. As a result, the marking device 110 can be miniaturized, and the device introduction cost can be reduced. Therefore, the manufacturing cost can be reduced.

Further, according to the method for manufacturing the large-format film-forming substrate 2 of the present embodiment, the method for manufacturing the split film-forming substrate 3, and the production control method for the split film-forming substrate 3, in the marking process, a plurality of divided film-forming substrates are formed after the dicing step. When the substrates 3 are stacked, the plurality of identification marks M are marked so that the identification marks M on the plurality of divided film-forming substrates 3 overlap (FIG. 4C). As a result, the identification marks M of the plurality of divided film-forming substrates 3 can be easily read at the same position in the reading step. Further, since the reading range A2 of the reading device 150 can be reduced, the reading resolution of the identification mark M can be increased and the reading accuracy can be improved.

(Modification example 1)
FIG. 5A shows a work-in-process of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-process of a solar cell, that is, the post-diced split semiconductor substrate (divided film-forming substrate) including the manufacturing method of. FIG. 5B shows a work-in-progress product of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress article of a solar cell, that is, the dicing-deposited split semiconductor substrate (divided film-deposited substrate) including the manufacturing method of.

As shown in FIGS. 5A and 5B, in the marking process, the identification mark M may be arranged by the marking device 110 at the end of the large-format semiconductor substrate 11 instead of the central portion of the large-format semiconductor substrate 11. The photoelectric conversion characteristic at the end of the large-format semiconductor substrate 11 is often lower than the photoelectric conversion characteristic at the center of the large-format semiconductor substrate 11. According to this modification, since the identification mark M is arranged at the end having low photoelectric conversion characteristics, it is possible to reduce the decrease in power generation efficiency caused by the identification mark M.

Also in this modification, all the identification marks M on the large-format semiconductor substrate 11 are simultaneously marked by using one marking device 110 whose marking range A1 is smaller than that of the large-format semiconductor substrate 11. In the example of FIG. 5A, the markable range A1 is 30 mm × 170 mm.

Further, also in this modification, when a plurality of film-formed divided semiconductor substrates 3 are stacked after the dicing step, a plurality of identification marks M are marked so that the identification marks M on the plurality of film-formed divided semiconductor substrates 3 overlap. .. In other words, the identification mark M is marked rotationally symmetrically with respect to the dicing line L within the markable range A1 of one marking device 110.

Further, in this modification, the end portion of the large-format semiconductor substrate 11 having low photoelectric conversion characteristics may be cut off in the dicing step. In this case, it is not necessary to consider the marking of the identification mark, which is a feature of the present invention, in the end region divided by the dicing line L0 for cutting off the end of the large-format semiconductor substrate 11.

(Modification 2)
FIG. 6A shows a work-in-process of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-process of a solar cell, that is, the post-diced split semiconductor substrate (divided film-forming substrate) including the manufacturing method of. FIG. 6B shows a work-in-progress product of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress article of a solar cell, that is, the dicing-deposited split semiconductor substrate (divided film-deposited substrate) including the manufacturing method of. FIG. 6C shows a work-in-process of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the reading process in the production control method of the work-in-process of a solar cell, that is, the divided semiconductor substrate (divided film-deposited substrate) which has been formed after dicing, including the manufacturing method of.

As shown in FIGS. 6A to 6C, it may be divided into four equal parts by the intersecting dicing lines L.

Also in this modification, all the identification marks M on the large-format semiconductor substrate 11 are simultaneously marked by using one marking device 110 whose marking range A1 is smaller than that of the large-format semiconductor substrate 11. In the example of FIG. 6A, the markable range A1 is 30 mm × 30 mm.

Further, also in this modification, as shown in FIG. 6C, when a plurality of film-formed divided semiconductor substrates 3 are stacked after the dicing step, a plurality of identification marks M in the plurality of film-formed divided semiconductor substrates 3 overlap each other. The identification mark M of is marked. In other words, the identification mark M is marked rotationally symmetrically with respect to the dicing line L within the markable range A1 of one marking device 110.

(Modification 3)
FIG. 7A shows a work-in-process of a solar cell according to a modification of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-process of a solar cell, that is, the post-diced split semiconductor substrate (divided film-forming substrate) including the manufacturing method of. FIG. 7B shows a work-in-progress product of a solar cell according to a modification of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress article of a solar cell, that is, the dicing-deposited split semiconductor substrate (divided film-deposited substrate) including the manufacturing method of.

In the above-described embodiment, the embodiment of dividing into two equal parts in one direction is illustrated, but as shown in FIGS. 7A and 7B, it may be divided into four or six equal parts or more (even numbers) in one direction.

Also in this modification, all the identification marks M on the large-format semiconductor substrate 11 are simultaneously marked by using one marking device 110 whose marking range A1 is smaller than that of the large-format semiconductor substrate 11. In the example of FIG. 7A, the markable range A1 is 170 mm × 30 mm.

Further, also in this modification, when a plurality of film-formed divided semiconductor substrates 3 are stacked after the dicing step, a plurality of identification marks M are marked so that the identification marks M on the plurality of film-formed divided semiconductor substrates 3 overlap. .. In other words, the identification mark M is marked rotationally symmetrically with respect to the dicing line L within the markable range A1 of one marking device 110.

(Modification example 4)
FIG. 8A shows a work-in-process of a solar cell according to a modification of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the marking process and the film-forming process in the production control method of the work-in-process of a solar cell, that is, the post-diced split semiconductor substrate (divided film-forming substrate) including the manufacturing method of. FIG. 8B shows a work-in-progress product of a solar cell according to a modified example of the present embodiment, that is, a large-format semiconductor substrate (large-format film-forming substrate) before dicing and a split semiconductor substrate (divided film-forming substrate) after dicing. It is a figure which shows the dicing process in the production control method of the work-in-progress article of a solar cell, that is, the dicing-deposited split semiconductor substrate (divided film-deposited substrate) including the manufacturing method of.

In the above-described embodiment, the embodiment of dividing into two equal parts in one direction is illustrated, but as shown in FIGS. 8A and 8B, it may be divided into three or more equal parts (odd number) in one direction.

Also in this modification, all the identification marks M on the large-format semiconductor substrate 11 are simultaneously marked by using one marking device 110 whose marking range A1 is smaller than that of the large-format semiconductor substrate 11. In the example of FIG. 8A, the markable range A1 is 100 mm × 170 mm.

Further, also in this modification, when a plurality of film-formed divided semiconductor substrates 3 are stacked after the dicing step, a plurality of identification marks M are marked so that the identification marks M on the plurality of film-formed divided semiconductor substrates 3 overlap. .. In other words, the identification mark M is marked rotationally symmetrically with respect to the dicing line L within the markable range A1 of one marking device 110. As in the present modification, the identification mark M0 may be further arranged in addition to the identification mark M arranged rotationally symmetrically with respect to the dicing line L.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications and modifications can be made. For example, in the above-described embodiment, the in-process product of the solar cell 1 shown in FIG. 1 or 2, that is, the film-formed large-format semiconductor substrate (large-format film-forming substrate) 2 before dicing and the film-deposited split semiconductor substrate after dicing (the film-forming split semiconductor substrate). The divided film-forming substrate) 3 and its manufacturing method have been described. However, the large-format film-forming substrate and its manufacturing method, and the divided film-forming substrate and its manufacturing method of the present invention are not limited to this, and various large-format film-forming substrates and their manufacturing methods, and the divided film-forming substrate and its manufacturing method are not limited thereto. Applicable to.

Further, in the above-described embodiment, the production control method and the production control system 100 of the work-in-process of the solar cell 1 shown in FIG. 1 or 2, that is, the film-formed split semiconductor substrate (divided film-deposited substrate) 3 after dicing will be described. did. However, the production control method and production control system for the split film-forming substrate of the present invention are not limited to this, and can be applied to various production control methods and production control systems for the split film-forming substrate.

1 Solar cell 2 Large-format semiconductor substrate with film formation (Large-format film-forming substrate)
3 Separated semiconductor substrate with film formation (divided film formation substrate)
11 Semiconductor substrate 13 Third intrinsic semiconductor layer 15 Antireflection layer 23 First intrinsic semiconductor layer 25 First conductive semiconductor layer 27 First transparent electrode layer 28 First metal electrode layer 33 Second intrinsic semiconductor layer 35 Second conductive semiconductor Layer 37 Second transparent electrode layer 38 Second metal electrode layer 100 Production control system 110 Marking device 120 Formation device 130 Dicing device 140 Control device 150 Reading device A1 Markable range A2 Reading range L, L0 Dicing line M, M0 Identification mark

Claims (13)

This is a method for manufacturing a large-format film-forming substrate formed on a large-format substrate before dicing.
A marking step of marking at least one identification mark for each division region divided by the dicing line on one main surface side of the large-format substrate.
A film forming step of forming the large-format film-forming substrate by forming a film on the large-format substrate excluding the position of the identification mark, and
Including
In the marking process,
After dicing, when a plurality of divided film-forming substrates formed by dicing the large-format film-forming substrate are stacked, the identification marks on the plurality of divided film-forming substrates overlap each other.
All the identification marks on the large format substrate are simultaneously marked by using one marking device having a marking range smaller than that of the large format substrate.
A method for manufacturing a large-format film-forming substrate. The method for manufacturing a large-format film-forming substrate according to claim 1, wherein in the marking step, the identification mark is marked rotationally symmetrically with respect to the dicing line within the markable range of the one marking device. The method for manufacturing a large-format film-forming substrate according to claim 1 or 2, wherein the identification mark is arranged at a position where the distance from the dicing wire is 15 mm or less. The method for manufacturing a large-format film-forming substrate according to any one of claims 1 to 3, wherein the identification mark is arranged in the central portion of the large-format substrate. The method for manufacturing a large-format film-forming substrate according to any one of claims 1 to 3, wherein the identification mark is arranged at an end portion of the large-format substrate. The method for manufacturing a large-format film-forming substrate according to any one of claims 1 to 5, wherein the identification mark includes at least one of alphanumeric characters, figures, barcodes, and two-dimensional barcodes. The method for manufacturing a large-format film-forming substrate according to any one of claims 1 to 6, wherein the large-format film-forming substrate is a work-in-process product of a solar cell. A method for producing a plurality of divided film-forming substrates, which comprises the method for producing a large-format film-forming substrate according to any one of claims 1 to 7, and is obtained by dicing the large-format film-forming substrate.
A dicing step of producing the plurality of divided film-forming substrates by dicing the large-format film-forming substrate along the dicing line is included.
A method for manufacturing a split film-forming substrate. The method for manufacturing a plurality of divided film-forming substrates, which includes the method for producing a divided film-forming substrate according to claim 8, wherein the method is for controlling the production of the plurality of divided film-forming substrates.
A management process in which at least one of the information of the marking process, the film forming process, and the dicing process is managed as production information in association with the information indicated by the identification mark.
A reading step of reading the production information by reading the identification mark for each of the plurality of divided film-forming substrates.
Production control method for split film-forming substrates, including. The production information of the marking process is a marking condition.
The production information of the film forming process is the film forming condition.
The production information of the dicing process is a dicing condition.
The production control method for a split film-forming substrate according to claim 9. A large-format film-forming substrate manufactured by the method for manufacturing a large-format film-forming substrate according to any one of claims 1 to 7. A split film-forming substrate manufactured by the method for manufacturing a split film-forming substrate according to claim 8. A production control system for a split film-forming substrate for the method for controlling the production of a split film-forming substrate according to claim 9 or 10.
A marking device that marks at least one identification mark for each division area divided by a dicing line on one main surface side of a large-format substrate.
A film forming apparatus that produces a large-format film-forming substrate by forming a film on the large-format substrate excluding the position of the identification mark.
A dicing apparatus that generates a plurality of divided film-forming substrates by dicing the large-format film-forming substrate along the dicing line.
At least one of the information at the time of marking by the marking device, the information at the time of film formation by the film forming apparatus, and the information at the time of dicing by the dicing apparatus is managed as production information in association with the information indicated by the identification mark. Management device and
A reading device that reads the production information by reading the identification mark for each of the plurality of divided film-forming substrates.
With
The marking device is
After dicing, when a plurality of divided film-forming substrates formed by dicing the large-format film-forming substrate are stacked, the identification marks on the plurality of divided film-forming substrates overlap each other.
All the identification marks on the large format substrate are simultaneously marked by using one marking device having a marking range smaller than that of the large format substrate.
Production management system for split film-forming substrates.

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