WO2021014772A1

WO2021014772A1 - Substrate treatment device and substrate treatment method

Info

Publication number: WO2021014772A1
Application number: PCT/JP2020/021852
Authority: WO
Inventors: 仁司中井
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2019-07-19
Filing date: 2020-06-03
Publication date: 2021-01-28
Also published as: JP7372068B2; CN114008756A; JP2021019092A; TWI803755B; KR102636437B1; TW202115773A; KR20220024748A

Abstract

This substrate treatment device includes: an opposing member that has a disk part having an opposing surface opposing, from above, a substrate held by a substrate holding unit and an extension part extending from the disk part to the outside in the radial direction centered on a vertical axis; an annular member that encircles the substrate held by the substrate holding unit in a plan view; and an opposing member lifting and lowering unit for lifting and lowering, in cooperation with the annular member, the opposing member such that a blocked space to which the inflow of atmosphere from the outside is restricted is demarcated by the substrate, the opposing member, and the annular member. The annular member has a guiding surface for, when a substrate rotation unit rotates the substrate held by the substrate holding unit, guiding a treatment liquid present on the upper surface of the substrate, by centrifugal force, radially outward relative to a circumferential edge section of the substrate. The extension part and the annular member demarcate a treatment liquid discharge path from which the treatment liquid present on the guiding surface is discharged to the outside of the blocking space.

Description

Substrate processing equipment and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) such as organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, and substrates for optomagnetic disks. Includes substrates such as substrates, photomask substrates, ceramic substrates, and solar cell substrates.

When the surface of the substrate is treated with a treatment solution such as a chemical solution, the pattern formed on the surface of the substrate may be oxidized by the oxygen dissolved in the treatment solution. In order to suppress the oxidation of the pattern, it is necessary to reduce the oxygen concentration in the atmosphere near the surface of the substrate.

Therefore, in Patent Document 1 below, a blocking member facing the upper surface of the substrate held by the spin chuck is provided, and the space between the blocking member and the substrate is filled with nitrogen gas to create an atmosphere near the upper surface of the substrate. It is disclosed that the oxygen concentration of the water can be reduced.

U.S. Patent Application Publication No. 2015/14610009

The blocking member provided in the substrate processing apparatus described in Patent Document 1 includes a disk portion facing the upper surface of the substrate and a cylindrical portion extending downward from the outer peripheral portion of the disk portion. Since the substrate is surrounded by a cylindrical portion, it is easy to reduce the oxygen concentration in the atmosphere near the upper surface of the substrate with nitrogen gas. When the processing liquid is supplied to the upper surface of the substrate while the substrate is surrounded by the cylindrical portion, the processing liquid on the substrate scatters outward from the peripheral edge portion of the upper surface of the substrate and is received by the cylindrical portion. Therefore, the processing liquid bounced off the cylindrical portion may reattach to the peripheral edge of the upper surface of the substrate, and particles may be generated.

Therefore, one object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of reducing the oxygen concentration in the atmosphere near the upper surface of the substrate and suppressing the generation of particles on the upper surface of the substrate. Is to provide.

One embodiment of the present invention includes a substrate holding unit that holds the substrate horizontally, a substrate rotating unit that rotates the substrate holding unit around a vertical axis passing through a central portion of the substrate held by the substrate holding unit, and the like. A processing liquid supply unit that supplies a processing liquid toward the upper surface of the substrate held by the substrate holding unit, and an inert gas that supplies an inert gas toward the upper surface of the substrate held by the substrate holding unit. A supply unit, a disk portion having a facing surface facing the substrate held by the substrate holding unit from above, and an extension portion extending outward in the radial direction centered on the vertical axis from the disk portion. The facing member having the above, the annular member surrounding the substrate held by the substrate holding unit in a plan view, the substrate held by the substrate holding unit, the facing member, and the annular member provide an atmosphere from the outside. Provided is a substrate processing apparatus including the annular member and an opposing member elevating unit that elevates and elevates the opposing member so as to partition a blocking space in which inflow is restricted.

When the annular member rotates the substrate held by the substrate holding unit, the processing liquid existing on the upper surface of the substrate is centrifugally removed from the peripheral portion of the substrate in the radial direction. It has a guide surface to guide the direction. Then, the extension portion and the annular member define a treatment liquid discharge path for discharging the treatment liquid existing on the guide surface to the outside of the blocking space.

According to this device, the blocking space is partitioned by the substrate, the opposing member, and the annular member by raising and lowering the opposing member together with the annular member. By supplying the inert gas toward the upper surface of the substrate in the state where the blocking space is partitioned, the atmosphere in the blocking space can be replaced with the inert gas. Thereby, the oxygen concentration in the cutoff space, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced. Since the inflow of the atmosphere from the external space is restricted in the blocking space, once the atmosphere in the blocking space is replaced with the inert gas, the oxygen concentration in the atmosphere in the blocking space is reduced. Easy to maintain.

By supplying the treatment liquid to the upper surface of the substrate in a state where the atmosphere in the blocking space is replaced with the inert gas, the upper surface of the substrate is treated with the treatment liquid while suppressing an increase in the oxygen concentration in the treatment liquid. be able to.

The guide surface of the annular member guides the treatment liquid existing on the upper surface of the substrate to the outside in the radial direction from the peripheral edge of the substrate by the centrifugal force based on the rotation of the substrate. Then, the processing liquid that has moved on the guide surface is guided to the treatment liquid discharge path without being scattered from the substrate, and is discharged to the outside of the blocking space. Since the guide surface exists between the peripheral edge of the substrate and the treatment liquid discharge path, the peripheral edge of the substrate is sufficiently separated from the extending portion of the facing member. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from rebounding from the facing member and reattaching to the upper surface of the substrate. Even if the processing liquid discharged from the upper surface of the substrate bounces off the opposing member, most of it adheres to the guide surface located radially outward of the upper surface of the substrate. Therefore, it is possible to prevent the treatment liquid from reattaching to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

As a result of the above, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

In one embodiment of the present invention, the width of the treatment liquid discharge path is smaller than the width of the blocking space in the vertical direction. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path is relatively small. Therefore, while the treatment liquid is discharged to the outside of the cutoff space through the treatment liquid discharge path, it is possible to suppress the atmosphere outside the cutoff space from flowing in through the treatment liquid discharge path. Therefore, the upper surface of the substrate can be treated with the treatment liquid while suppressing an increase in the oxygen concentration in the treatment liquid.

In one embodiment of the present invention, the annular member is connected to the outer end of the guide surface in the radial direction, and has a discharge path section screen for partitioning the treatment liquid discharge path. Then, the treatment liquid discharge path has an inflow port at the boundary between the guide surface and the discharge zone screen.

The treatment liquid may collide with the extension part near the inflow port of the treatment liquid discharge path. Backflow (flow of the treatment liquid inward in the radial direction of the substrate) is generated in the treatment liquid that collides with the extension portion. If the configuration is not provided with a guide surface, the inflow port of the processing liquid discharge path is arranged near the peripheral edge of the upper surface of the substrate, so that backflow in the processing liquid may occur on the substrate. When backflow occurs, the treatment liquid that goes inward in the radial direction and the treatment liquid that goes outward in the radial direction may collide with each other, and the treatment liquid may scatter in the cutoff space. When the treatment liquid scattered in the blocking space reattaches to the upper surface of the substrate, particles are generated on the substrate.

Therefore, if the inflow port of the treatment liquid discharge path is provided at the boundary between the discharge path section screen connected to the outer end of the guide surface in the radial direction and the guide surface, the backflow in the treatment liquid The place where the above occurs is on the guide surface. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

In one embodiment of the present invention, the discharge channel screen and the guide surface form a single flat surface that is flat in the horizontal direction. If a step is provided between the guide surface and the discharge path section screen, the treatment liquid may adhere to the bounced treatment liquid due to the step, and the treatment liquid may reattach to the upper surface of the substrate. As a result, particles may be generated on the upper surface of the substrate.

Therefore, if there is no step between the guide surface and the discharge path section screen and the guide surface and the discharge path section screen form a single flat surface that is flat in the horizontal direction, the processing liquid that flows on the guide surface. Can be smoothly flowed into the processing liquid discharge path. Therefore, it is possible to suppress the scattering of the treatment liquid in the blocking space, and it is possible to suppress the generation of particles due to the scattering of the treatment liquid.

In one embodiment of the present invention, the substrate processing apparatus further includes an opposing member rotating unit that rotates the opposing member together with the annular member around the vertical axis in synchronization with the substrate held by the substrate holding unit. Synchronous rotation means rotating in the same direction and at the same rotation speed. If the difference between the rotation speed of the substrate and the rotation speed of the opposing member and the annular member is large, the airflow in the blocking space may be disturbed. When the airflow in the cutoff space is turbulent, the blowing force of the airflow acts on the treatment liquid on the upper surface of the substrate, and the upper surface of the substrate is locally exposed or the treatment liquid is scattered in the cutoff space. Therefore, if the substrate, the annular member, and the facing member that partition the blocking space are configured to rotate synchronously, the turbulence of the airflow in the blocking space can be suppressed.

In one embodiment of the present invention, the substrate processing apparatus further includes a plurality of connecting members that connect the annular member and the opposing member. Then, each of the connecting members is formed so as to be directed outward in the radial direction and toward the downstream side in the rotational direction of the substrate held by the substrate holding unit in a plan view.

In the cut-off space, an air flow toward the downstream side in the rotational direction is likely to occur as it goes outward in the radial direction. Therefore, according to this device, each of the plurality of connecting members connecting the opposing member and the annular member is formed so as to move outward in the radial direction toward the downstream side in the rotational direction in a plan view. There is. Therefore, it is possible to promote the generation of an air flow toward the downstream side in the rotational direction as it goes outward in the radial direction. Therefore, the turbulence of the air flow in the cutoff space can be further suppressed.

In one embodiment of the present invention, the substrate processing apparatus further includes a controller that controls the substrate rotating unit, the processing liquid supply unit, the inert gas supply unit, and the facing member elevating unit.

Then, the controller does not move the facing member and the annular member by the facing member elevating unit to partition the blocking space, and the inert gas supply unit toward the upper surface of the substrate. An atmosphere replacement step of replacing the atmosphere in the blocking space with an inert gas by supplying an active gas, and the substrate from the processing liquid supply unit in a state where the atmosphere in the blocking space is replaced with an inert gas. The treatment liquid on the upper surface of the substrate is supplied to the upper surface of the substrate via the guide surface and the treatment liquid discharge path by rotating the substrate on the substrate rotation unit and the treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate. It is programmed to perform a process liquid discharge process that discharges out of the shutoff space.

Therefore, the atmosphere in the blocking space can be reliably replaced with the inert gas. Thereby, the oxygen concentration in the cutoff space, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced. Then, by rotating the substrate, a centrifugal force acts on the treatment liquid existing on the upper surface of the substrate, and the treatment liquid existing on the upper surface of the substrate is surely cut off through the guide surface and the treatment liquid discharge path. Can be discharged to the outside. Therefore, the treatment liquid can be excluded from the cutoff space while suppressing the treatment liquid from scattering in the cutoff space. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from rebounding from the facing member and reattaching to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

In one embodiment of the present invention, the guide surface has an inclined surface that is inclined upward so as to go outward in the radial direction.

Then, in the processing liquid supply step, the controller supplies the processing liquid to the upper surface of the substrate held by the substrate holding unit, so that the processing liquid is received by the inclined surface and the upper surface of the substrate and the processing liquid is received. In the processing liquid discharge step, the liquid pool forming step of forming the liquid pool and the liquid pool removing step of accelerating the rotation of the substrate by the substrate rotating unit and removing the liquid pool from the upper surface of the substrate are executed. It is programmed to do.

According to this device, by supplying the treatment liquid to the upper surface of the substrate, a liquid pool of the treatment liquid can be formed by the inclined surface and the upper surface of the substrate. Therefore, since the treatment liquid is not discharged to the outside of the substrate, the upper surface of the substrate can be treated with the amount of the treatment liquid required to form a liquid pool. Therefore, the consumption of the treatment liquid can be reduced.

The inclined surface is inclined so as to go upward as it goes outward in the radial direction. Therefore, by accelerating the rotation of the substrate and applying a centrifugal force to the liquid pool, the inclined surface can be smoothly raised on the treatment liquid. The treatment liquid that has climbed the inclined surface smoothly flows into the treatment liquid discharge path. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

Another embodiment of the present invention includes a substrate holding step of horizontally holding a circular substrate in a plan view, and a vertical axis passing through a disk portion having a facing surface facing the substrate from above and a central portion of the substrate. The opposing member having an extending portion extending from the disk portion outward in the radial direction centered on the above, and the annular member surrounding the substrate in a plan view are moved in the vertical direction, and the opposed member and the annular member are moved. , And the space partitioning step of partitioning the blocking space in which the inflow of the atmosphere from the outside is restricted by the substrate, and the atmosphere in the blocking space is made of the inert gas by supplying the inert gas toward the blocking space. The atmosphere replacement step of replacement, the treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate in a state where the atmosphere in the blocking space is replaced by the inert gas, and the treatment liquid are present on the upper surface of the substrate. By rotating the substrate in the rotation direction around the vertical axis in this state, the treatment liquid existing on the peripheral edge of the upper surface of the substrate is brought into the extending portion via the guide surface provided on the annular member. Provided is a substrate treatment method including a treatment liquid discharge step of guiding the treatment liquid to a treatment liquid discharge passage partitioned by the annular member and discharging the treatment liquid from the treatment liquid discharge passage to the outside of the blocking space.

According to this method, the blocking space is partitioned by the substrate, the opposing member, and the annular member by raising and lowering the annular member and the opposing member. By supplying the inert gas toward the upper surface of the substrate in the state where the blocking space is partitioned, the atmosphere in the blocking space can be replaced with the inert gas. Thereby, the oxygen concentration in the cutoff space, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced. Since the inflow of the atmosphere from the external space is restricted in the blocking space, once the atmosphere in the blocking space is replaced with the inert gas, the oxygen concentration in the atmosphere in the blocking space is reduced. Easy to maintain.

The treatment liquid existing on the upper surface of the substrate moves from the peripheral edge of the upper surface of the substrate due to the centrifugal force based on the rotation of the substrate, and is guided to the treatment liquid discharge path via the guide surface. The treatment liquid guided to the treatment liquid discharge path is discharged to the outside of the cutoff space. Since the guide surface exists between the peripheral edge of the substrate and the treatment liquid discharge path, the peripheral edge of the substrate is sufficiently separated from the extending portion of the facing member. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from rebounding from the facing member and reattaching to the upper surface of the substrate. Even if the processing liquid discharged from the upper surface of the substrate bounces off the opposing member, most of it adheres to the guide surface located radially outward of the upper surface of the substrate. Therefore, it is possible to prevent the treatment liquid from reattaching to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

In another embodiment of the present invention, the width of the treatment liquid discharge path is smaller than the width of the blocking space in the vertical direction. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path is relatively small. Therefore, while the treatment liquid is discharged to the outside of the cutoff space through the treatment liquid discharge path, it is possible to suppress the atmosphere outside the cutoff space from flowing in through the treatment liquid discharge path. Therefore, the upper surface of the substrate can be treated with the treatment liquid while suppressing an increase in the oxygen concentration in the treatment liquid.

In another embodiment of the present invention, the annular member is connected to the outer end of the guide surface in the radial direction, and has a discharge path section screen for partitioning the treatment liquid discharge path. Then, the treatment liquid discharge path has an inflow port at the boundary between the guide surface and the discharge path section screen.

According to this method, the inflow port of the treatment liquid discharge path is provided at the boundary between the discharge path section screen connected to the outer end of the guide surface in the radial direction and the guide surface. Therefore, the location where the backflow occurs in the processing liquid is not on the upper surface of the substrate but on the guide surface. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

In another embodiment of the present invention, the discharge channel screen and the guide surface form a single flat surface that is flat in the horizontal direction. According to this method, there is no step between the guide surface and the discharge path section screen, and the guide surface and the discharge path section screen form a single flat surface that is flat in the horizontal direction. Therefore, the treatment liquid flowing on the guide surface can be smoothly flowed into the treatment liquid discharge path. Therefore, it is possible to suppress the scattering of the treatment liquid in the blocking space, and it is possible to suppress the generation of particles due to the scattering of the treatment liquid.

In another embodiment of the present invention, the substrate processing method further includes a synchronous rotation step of rotating the annular member and the opposing member synchronously around the vertical axis in the processing liquid discharge step. Therefore, the turbulence of the air flow in the cutoff space can be suppressed.

In another embodiment of the present invention, the annular member and the opposing member are connected by a connecting member. Then, the connecting member is formed so as to be directed toward the downstream side in the rotational direction of the substrate as it is directed outward in the radial direction in a plan view. Therefore, it is possible to promote the generation of an air flow toward the downstream side in the rotational direction as it goes outward in the radial direction. Therefore, the turbulence of the air flow in the cutoff space can be further suppressed.

In another embodiment of the present invention, the guide surface has an inclined surface that inclines upward as it goes outward in the radial direction. The treatment liquid supply step includes a liquid pool forming step of supplying the treatment liquid to the upper surface of the substrate to receive the treatment liquid by the inclined surface and the upper surface of the substrate to form a liquid pool of the treatment liquid. Then, the processing liquid discharge step includes a liquid pool removing step of accelerating the rotation of the substrate and removing the liquid pool from the upper surface of the substrate.

According to this method, by supplying the treatment liquid to the upper surface of the substrate, a liquid pool of the treatment liquid can be formed by the inclined surface and the upper surface of the substrate. Therefore, since the treatment liquid is not discharged to the outside of the substrate, the upper surface of the substrate can be treated with the amount of the treatment liquid required to form a liquid pool. Therefore, the consumption of the treatment liquid can be reduced.

In another embodiment of the present invention, the inner end surface of the annular member in the radial direction extends in the vertical direction. The upper end of the inner end surface is connected to the guide surface. Then, in the treatment liquid supply step, the annular member is moved toward the upper surface of the substrate so that the upper end portion of the inner end surface of the annular member is located above the upper surface of the substrate. The process includes a liquid pool forming step of receiving the treatment liquid by the inner end surface of the annular member and the upper surface of the substrate by supplying the treatment liquid to form a liquid pool of the treatment liquid. In the treatment liquid discharge step, the liquid pool is collected from the upper surface of the substrate by moving the annular member so that the upper end portion of the inner end surface of the annular member is located at the same height as the upper surface of the substrate. Includes a liquid pool elimination step to eliminate.

According to this method, by supplying the treatment liquid to the upper surface of the substrate, a liquid pool of the treatment liquid can be formed by the inner end surface of the annular member and the upper surface of the substrate. Therefore, the upper surface of the substrate is treated by the treatment liquid in the liquid pool. Therefore, the upper surface of the substrate can be treated by supplying an amount of the treatment liquid required for forming the liquid pool to the upper surface of the substrate. Therefore, the consumption of the processing liquid can be reduced as compared with the configuration in which the processing liquid supplied to the upper surface of the substrate is discharged to the outside of the substrate without being received by the inner end surface.

If the annular member is moved so that the upper end of the inner end surface of the annular member is located at the same height as the upper surface of the substrate, the treatment liquid is released from the liquid receiving by the inner end surface. Therefore, the treatment liquid existing on the upper surface of the substrate can be smoothly flowed into the treatment liquid discharge path. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

In another embodiment of the present invention, the substrate processing method comprises a first cylindrical portion surrounding the opposing member and the annular member in a plan view, and a first circle extending inward in the radial direction from the first cylindrical portion. A first guard having a ring portion, a second cylindrical portion surrounding the facing member and the annular member in a plan view, and extending inward in the radial direction from the second cylindrical portion to the first annular portion. A guard moving step of individually moving the second guard having the second ring portion facing from below up and down is included. The treatment liquid discharge path has a discharge port for discharging the treatment liquid outward in the radial direction. Then, in the guard moving step, when the treatment liquid is discharged from the discharge port, the inner end of the first annular portion in the radial direction and the second annular portion in the radial direction in the vertical direction The step of moving the first guard and the second guard so that the treatment liquid discharge path is located between the inner end and the inner end of the guard is included.

According to this method, when the treatment liquid is discharged from the discharge port, the second ring portion of the second guard is located below the discharge port in the vertical direction. Therefore, the treatment liquid bounced off from the first guard adheres to the second guard without moving inward in the radial direction from the second guard. Therefore, it is possible to prevent the treatment liquid bounced off from the first guard from adhering to the lower surface of the substrate.

In another embodiment of the present invention, the substrate treatment method is executed in parallel with the treatment liquid discharge step, and a protective liquid supply step of supplying a protective liquid for protecting the lower surface of the substrate toward the lower surface of the substrate. Including further. Then, in the guard moving step, the second guard is located so that the radial inner end of the second ring portion is located below the discharge port and above the lower end of the annular member. Includes the step of moving.

According to this method, the protective liquid is supplied toward the lower surface of the substrate in parallel with the processing liquid discharge process. Therefore, even when the mist of the treatment liquid reaches the vicinity of the lower surface of the substrate beyond the second guard, the lower surface of the substrate can be protected from the mist.

Further, the second guard is moved so that the inner end of the second annular portion in the radial direction is located below the discharge port and above the lower end of the annular member. Therefore, the second guard can receive the protective liquid discharged outward from the lower surface of the substrate. That is, the processing liquid discharged from the upper surface of the substrate can be received by the first guard, and the protective liquid discharged outward from the lower surface of the substrate can be received by the second guard. Therefore, it is possible to avoid mixing the treatment liquid discharged from the substrate and the protective liquid. As a result, the treatment liquid and the protective liquid can be recovered without being mixed.

In another embodiment of the present invention, the substrate treatment method further includes a pre-rinse step of supplying a rinse liquid to the upper surface of the substrate prior to the treatment liquid supply step. The rinse liquid supplied to the upper surface of the substrate in the pre-rinsing step closes the gap between the annular member and the substrate, and is discharged from the treatment liquid discharge path. Then, the prerinsing step is executed in parallel with the atmosphere replacement step.

The gap between the annular member and the substrate is closed by the rinsing liquid. Therefore, the movement of the inert gas through the gap is suppressed. Further, the rinse liquid is discharged from the cutoff space to the external space via the treatment liquid discharge path. Therefore, unless a large force is applied to push away the rinse liquid in the treatment liquid discharge passage, the air does not flow into the cutoff space through the treatment liquid discharge passage. On the other hand, since the inert gas is supplied to the blocking space, the air in the blocking space is discharged to the external space together with the rinsing liquid through the treatment liquid discharge path so that the pressure in the blocking space does not rise too much. To.

Therefore, the atmosphere inside the blocking space can be replaced with an inert gas while further restricting the inflow of the atmosphere from the external space into the blocking space.

The above-mentioned or still other purposes, features and effects of the present invention will be clarified by the description of the embodiments described below with reference to the accompanying drawings.

FIG. 1 is a schematic plan view showing the layout of the substrate processing apparatus according to the first embodiment of the present invention. FIG. 2 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus. FIG. 3 is a cross-sectional view of the periphery of the extending portion of the facing member provided in the processing unit. FIG. 4 is a cross-sectional view taken along the line IV-IV shown in FIG. FIG. 5 is a block diagram showing an electrical configuration of a main part of the substrate processing apparatus. FIG. 6 is a flow chart for explaining an example of substrate processing by the substrate processing apparatus. FIG. 7A is a schematic view for explaining the state of the substrate processing. FIG. 7B is a schematic view for explaining the state of the substrate processing. FIG. 7C is a schematic view for explaining the state of the substrate processing. FIG. 7D is a schematic view for explaining the state of the substrate processing. FIG. 7E is a schematic view for explaining the state of the substrate processing. FIG. 7F is a schematic view for explaining the state of the substrate processing. FIG. 8 is a schematic view for explaining the state of the treatment liquid in the vicinity of the annular member in the substrate treatment. FIG. 9 is a schematic view for explaining how the guard receives the processing liquid in the substrate processing. FIG. 10A is a schematic diagram for explaining another example of substrate processing by the substrate processing apparatus. FIG. 10B is a schematic diagram for explaining another example of substrate processing by the substrate processing apparatus. FIG. 11A is a schematic view for explaining a modification of the substrate processing apparatus. FIG. 11B is a schematic view for explaining a modification of the substrate processing apparatus. FIG. 12 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus according to the second embodiment of the present invention. FIG. 13 is a view of the periphery of the annular member provided in the processing unit according to the second embodiment as viewed from above. FIG. 14 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus according to the third embodiment of the present invention. FIG. 15 is a cross-sectional view of the periphery of the opposing member and the annular member provided in the processing unit according to the third embodiment. FIG. 16 is a schematic diagram for explaining substrate processing using the substrate processing apparatus according to the third embodiment. FIG. 17 is a schematic diagram for explaining another example of substrate processing using the substrate processing apparatus according to the third embodiment. FIG. 18 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus according to the fourth embodiment of the present invention. FIG. 19 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus according to the fifth embodiment of the present invention. FIG. 20 is a schematic view for explaining a modified example of the connecting member connected to the annular member.

<First Embodiment>
FIG. 1 is a schematic plan view showing the layout of the substrate processing apparatus 1 according to the first embodiment of the present invention.

The substrate processing device 1 is a single-wafer type device that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate.

The substrate processing apparatus 1 includes a plurality of processing units 2 for processing the substrate W with a fluid, a load port LP on which a carrier C accommodating a plurality of substrates W processed by the processing unit 2 is mounted, and a load port LP. It includes transfer robots IR and CR that transfer the substrate W between the substrate processing unit 2 and the processing unit 2, and a controller 3 that controls the substrate processing apparatus 1.

The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have, for example, a similar configuration. As will be described in detail later, the processing solution supplied to the substrate W in the processing unit 2 includes a chemical solution, a rinsing solution, a replacement solution, and the like.

Each processing unit 2 includes a chamber 4 and a processing cup 7 arranged in the chamber 4, and processes the substrate W in the processing cup 7. The chamber 4 is formed with an entrance / exit (not shown) for loading / unloading the substrate W and unloading the substrate W by the transfer robot CR. The chamber 4 is provided with a shutter unit (not shown) that opens and closes the doorway.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. The processing unit 2 includes a spin chuck 5, an opposing member 6, a processing cup 7, an annular member 8, a central nozzle 11, a plurality of first lower surface nozzles 12, and a plurality of second lower surface nozzles 13.

The spin chuck 5 rotates the substrate W around the vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W while holding the substrate W horizontally. The spin chuck 5 includes a spin base 21, a rotating shaft 22, and a spin motor 23 that applies a rotational force to the rotating shaft 22. The rotating shaft 22 is a hollow shaft. The rotating shaft 22 extends in the vertical direction along the rotating axis A1. The rotation axis A1 is a vertical axis passing through the central portion of the substrate W. A spin base 21 is coupled to the upper end of the rotating shaft 22. The spin base 21 is fitted onto the upper end of the rotating shaft 22. The upper surface of the spin base 21 has a circular shape in a plan view. The diameter of the upper surface of the spin base 21 is smaller than the diameter of the substrate W.

The spin chuck 5 further includes a suction unit 27 that sucks the substrate W arranged on the upper surface of the spin base 21 in order to hold the substrate W on the spin base 21.

A suction path 25 is inserted through the spin base 21 and the rotating shaft 22. The suction path 25 has a suction port 24 exposed from the center of the upper surface of the spin base 21. The suction path 25 is connected to the suction pipe 26. The suction pipe 26 is connected to a suction unit 27 such as a vacuum pump. The suction pipe 26 is provided with a suction valve 28 for opening and closing the path.

The spin chuck 5 is an example of a substrate holding unit for holding the substrate W horizontally. The substrate W can be placed in the correct position on the spin base 21 using an eccentric sensor (not shown).

The spin base 21 is rotated by rotating the rotating shaft 22 by the spin motor 23. As a result, the substrate W is rotated around the rotation axis A1 together with the spin base 21. The spin motor 23 is an example of a substrate rotation unit that rotates the substrate W around the rotation axis A1.

In the following, the inner diameter in the radial direction centered on the rotation axis A1 is referred to as "diameter inner direction", and the radial outer direction centered on the rotation axis A1 is referred to as "diameter outer direction".

The facing member 6 includes a disc portion 65 facing the substrate W held by the spin chuck 5 from above, and a flange-shaped (cylindrical) extending portion 66 extending radially outward from the disc portion 65. ..

The disk portion 65 is formed in a disk shape having a diameter substantially the same as or larger than that of the substrate W. The disk portion 65 has an facing surface 6a facing the upper surface (upper surface) of the substrate W. The facing surface 6a is arranged above the spin chuck 5 along a substantially horizontal direction.

Since the extension portion 66 extends radially outward from the disk portion 65, it is located radially outward from the peripheral edge of the substrate W.

A hollow shaft 60 is fixed on the side of the disk portion 65 opposite to the facing surface 6a. In the portion of the disk portion 65 that overlaps the rotation axis A1 in a plan view, a communication hole 6b that penetrates the disk portion 65 up and down and communicates with the internal space of the hollow shaft 60 is formed.

The central nozzle 11 is housed in the internal space of the hollow shaft 60 of the facing member 6. The discharge port 11a provided at the tip of the central nozzle 11 faces the central region on the upper surface of the substrate W from above. The central region of the upper surface of the substrate W is a region on the upper surface of the substrate W that includes the center of rotation of the substrate W and its periphery.

The central nozzle 11 includes a plurality of tubes (first tube 31, second tube 32, third tube 33, and fourth tube 34) that discharge the fluid downward, and a tubular casing 30 that surrounds the plurality of tubes. .. The plurality of tubes and the casing 30 extend in the vertical direction along the rotation axis A1. The discharge port 11a of the central nozzle 11 is also a discharge port of each tube.

The first tube 31 (center nozzle 11) is an example of a chemical solution supply unit that supplies a chemical solution such as DHF (dilute hydrofluoric acid) to the upper surface of the substrate W. The second tube 32 (center nozzle 11) is an example of a rinse liquid supply unit that supplies a rinse liquid such as DIW to the upper surface of the substrate W. The third tube 33 (center nozzle 11) is an example of a replacement liquid supply unit that supplies a replacement liquid such as IPA to the upper surface of the substrate W. That is, the central nozzle 11 is an example of a treatment liquid supply unit that supplies a treatment liquid such as a chemical liquid, a rinse liquid, and a replacement liquid to the upper surface of the substrate W.

The fourth tube 34 (center nozzle 11) is an example of an inert gas supply unit that supplies an inert gas such as nitrogen gas toward the upper surface of the substrate W.

The first tube 31 is connected to the chemical solution pipe 40 that guides the chemical solution to the first tube 31. When the chemical solution valve 50 interposed in the chemical solution pipe 40 is opened, the chemical solution is discharged from the first tube 31 (center nozzle 11) toward the central region on the upper surface of the substrate W in a continuous flow.

The chemical solution discharged from the first tube 31 is not limited to DHF. That is, the chemical liquid discharged from the first tube 31 is sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, aqueous ammonia, hydrogen peroxide solution, organic acid (for example, citric acid, oxalic acid, etc.), organic alkali (for example, TMAH). : Tetramethylammonium hydrochloride, etc.), surfactant, corrosion inhibitor, etc.), may be a liquid containing at least one. Examples of the chemical solution in which these are mixed include SPM (sulfuric acid / hydrogen peroxide mixture: hydrogen peroxide mixture), SC1 (ammonia-hydrogen peroxide mixture: ammonia hydrogen peroxide mixture) and the like.

The second tube 32 is connected to the upper rinse liquid pipe 41 that guides the rinse liquid to the second tube 32. When the upper rinse liquid valve 51 interposed in the upper rinse liquid pipe 41 is opened, the rinse liquid is continuously discharged from the second tube 32 (center nozzle 11) toward the central region on the upper surface of the substrate W. ..

Examples of the rinsing solution include DIW, carbonated water, electrolytic ionized water, hydrochloric acid water having a dilution concentration (for example, about 1 ppm to 100 ppm), ammonia water having a dilution concentration (for example, about 1 ppm to 100 ppm), and reduced water (hydrogen water). Can be mentioned.

The third tube 33 is connected to the upper replacement liquid pipe 42 that guides the replacement liquid to the third tube 33. When the upper replacement liquid valve 52 interposed in the upper replacement liquid pipe 42 is opened, the replacement liquid is continuously discharged from the third tube 33 (center nozzle 11) toward the central region on the upper surface of the substrate W. ..

The replacement liquid discharged from the third tube 33 is a liquid for replacing the rinse liquid on the upper surface of the substrate W. The replacement liquid is preferably a liquid having higher volatility than the rinse liquid. The replacement liquid discharged from the second tube 32 is preferably compatible with the rinse liquid.

The replacement liquid discharged from the third tube 33 is, for example, an organic solvent. Examples of the replacement liquid discharged from the third tube 33 include a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone and Trans-1,2-dichloroethylene.

Further, the replacement liquid discharged from the third tube 33 does not have to consist of only a single component, and may be a liquid mixed with other components. For example, it may be a mixed solution of IPA and DIW, or it may be a mixed solution of IPA and HFE.

The fourth tube 34 is connected to the inert gas pipe 43 that guides the inert gas to the fourth tube 34. When the inert gas valve 53 interposed in the inert gas pipe 43 is opened, the inert gas is continuously discharged downward from the fourth tube 34 (center nozzle 11).

The inert gas discharged from the fourth tube 34 is, for example, an inert gas such as nitrogen gas (N ₂ ). The inert gas is a gas that is inert to the pattern formed on the upper surface of the substrate W or the upper surface of the substrate W. The inert gas is not limited to nitrogen gas, and rare gases such as argon can also be used.

Although only one first lower surface nozzle 12 is shown in FIG. 2, a plurality of first lower surface nozzles 12 are arranged at intervals in the rotation direction R of the substrate W. The first lower surface nozzle 12 is an example of a lower rinse liquid supply unit that supplies a rinse liquid such as DIW to the lower surface of the substrate W.

Each of the plurality of first lower surface nozzles 12 is connected to a plurality of lower rinse liquid pipes 44 that guide the rinse liquid to the first lower surface nozzle 12. When the lower rinse liquid valve 54 interposed in the lower rinse liquid pipe 44 is opened, the rinse liquid is continuously discharged from the first lower surface nozzle 12 toward the outer peripheral region of the lower surface of the substrate W.

The outer peripheral region of the lower surface of the substrate W is an annular region between the central region and the peripheral region of the lower surface of the substrate W. The central region of the lower surface of the substrate W is a region on the lower surface of the substrate W that includes the center of rotation of the substrate W and its periphery. The peripheral edge region of the lower surface of the substrate W is a region including the peripheral edge of the lower surface of the substrate W and its surroundings.

Examples of the rinse liquid discharged from the first lower surface nozzle 12 include the same rinse liquid as the rinse liquid discharged from the second tube 32. That is, the rinse liquid discharged from the first lower surface nozzle 12 includes DIW, carbonated water, electrolytic ionized water, hydrochloric acid water having a dilution concentration (for example, about 1 ppm to 100 ppm), and a dilution concentration (for example, about 1 ppm to 100 ppm). Ammonia water, reduced water (hydrogen water) and the like can be mentioned.

Although only one second lower surface nozzle 13 is shown in FIG. 2, a plurality of second lower surface nozzles 13 are arranged at intervals in the rotation direction R of the substrate W. The second lower surface nozzle 13 is an example of a lower replacement liquid supply unit that supplies a replacement liquid such as IPA to the lower surface of the substrate W.

The plurality of second lower surface nozzles 13 are connected to a plurality of lower replacement liquid pipes 45 that guide the replacement liquid to the second lower surface nozzle 13, respectively. When the lower replacement liquid valve 55 interposed in the lower replacement liquid pipe 45 is opened, the replacement liquid is discharged from the second lower surface nozzle 13 toward the outer peripheral region of the lower surface of the substrate W in a continuous flow.

Examples of the rinse liquid discharged from the second lower surface nozzle 13 include the same rinse liquid as the replacement liquid discharged from the third tube 33. That is, examples of the replacement solution discharged from the third tube 33 include a solution containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone and Trans-1,2-dichloroethylene. ..

The replacement liquid discharged from the second lower surface nozzle 13 does not have to consist of only a single component, and may be a liquid mixed with other components. For example, it may be a mixed solution of IPA and DIW, or it may be a mixed solution of IPA and HFE.

The processing unit 2 further includes an opposing member elevating unit 61 that drives the elevating and lowering of the opposing member 6, and an opposing member rotating unit 62 that rotates the opposing member 6 around the rotation axis A1. The facing member elevating unit 61 can position the facing member 6 at an arbitrary position (height) from the lower position to the upper position.

The lower position is the position where the facing surface 6a is closest to the substrate W in the movable range of the facing member 6. The upper position is a position where the facing surface 6a is most distant from the substrate W in the movable range of the facing member 6.

In order to allow the transfer robot CR to access the vicinity of the spin base 21 so that the transfer robot CR can carry the substrate W into the chamber 4 or carry out the substrate W from the chamber 4, the facing member 6 is in the upper position. Must be located in.

The facing member elevating unit 61 includes, for example, a ball screw mechanism (not shown) coupled to a support member (not shown) that supports the hollow shaft 60, and an electric motor (not shown) that applies a driving force to the ball screw mechanism. Includes) and. The facing member elevating unit 61 is also referred to as a facing member lifter (blocking plate lifter).

The facing member rotation unit 62 includes, for example, an electric motor (not shown) for rotating the hollow shaft 60. The electric motor is built in, for example, a support member that supports the hollow shaft 60. The facing member rotating unit 62 rotates the facing member 6 by rotating the hollow shaft 60.

The annular member 8 surrounds the substrate W in a plan view. The annular member 8 is arranged below the extending portion 66 of the opposing member 6. The annular member 8 is connected to the extension portion 66 by a plurality of connecting members 9. Since the annular member 8 is connected to the facing member 6, the annular member 8 moves up and down as the facing member 6 moves up and down. That is, the opposing member elevating unit 61 also functions as an annular member elevating unit that elevates and elevates the annular member 8 together with the opposing member 6.

In the facing member elevating unit 61, the blocking space section position in which the substrate W, the facing member 6, and the annular member 8 partition the blocking space SS (see FIG. 3 described later) in which the inflow of atmosphere from the external space is restricted. The facing member 6 can be moved to. The blocking space partition position may be a position between the upper position and the lower position, or may be a lower position.

FIG. 3 is a cross-sectional view of the periphery of the extending portion 66 of the opposing member 6. As shown in FIG. 3, the extension portion 66 and the annular member 8 define a treatment liquid discharge path 10 for discharging the treatment liquid from the cutoff space SS to the outside of the external space OS. The external space OS includes a space above the facing member 6, a space below the lower surface of the substrate W, and a space radially outer than the facing member 6 and the annular member 8.

The extension portion 66 includes a wide portion 80 whose width in the vertical direction is larger than that of the disc portion 65, and a connecting portion 81 that connects the disc portion 65 and the wide portion 80. The width of the connecting portion 81 in the vertical direction increases toward the outside in the radial direction. The connecting portion 81 has an inclined lower surface 81a that is connected to the facing surface 6a and is inclined downward as it goes outward in the radial direction. The wide portion 80 has a flat lower surface 80a that is connected to the inclined lower surface 81a and extends horizontally in the horizontal direction below the facing surface 6a.

The blocking space SS is a space between the facing surface 6a of the disk portion 65 of the facing member 6 and the inclined lower surface 81a of the extending portion 66 and the upper surface of the substrate W. The cutoff space SS and the external space OS are communicated with each other by the treatment liquid discharge path 10.

The annular member 8 has an upper surface, a lower surface, a radial inner end surface (inner end surface 84), and a radial outer end surface. The upper surface and the lower surface of the annular member 8 are annular in a plan view, respectively. The upper surface of the annular member 8 includes an annular guide surface 85 that guides the treatment liquid existing on the peripheral edge of the upper surface of the substrate W radially outward from the peripheral edge of the upper surface of the substrate W, and the treatment liquid together with the extending portion 66. It has an annular discharge channel section screen 86 for partitioning the discharge path 10. The inner end face 84 has a cylindrical shape extending in the vertical direction.

The guide surface 85 is connected to the upper end of the inner end surface 84 and the radial inner end of the discharge path section screen 86. Each of the guide surface 85 and the discharge path section screen 86 is horizontally flat. The guide surface 85 is flush with the discharge channel screen 86. That is, the guide surface 85 and the discharge path section screen 86 form a single flat surface that is flat and annular in the horizontal direction.

In the first embodiment, when the opposing member 6 is located at the blocking space section position, the annular member 8 faces the substrate W from the outside in the radial direction. When the facing member 6 is located at the blocking space section position, the upper end of the inner end surface 84 and the guide surface 85 are located at the same height as the upper surface of the substrate W.

The lower surface of the annular member 8 has an annular lower inclined surface 87 and an annular lower flat surface 88. The lower inclined surface 87 is connected to the lower end of the inner end surface 84, and is inclined downward as it goes outward in the radial direction. The lower flat surface 88 is connected to the radial outer end of the lower inclined surface 87 and is horizontally flat.

The treatment liquid discharge path 10 is partitioned by a horizontally flat discharge path section screen 86 and a flat lower surface 80a. Therefore, the treatment liquid discharge path 10 is annular in a plan view and extends in the horizontal direction.

The treatment liquid discharge path 10 has an inflow port 10a on the guide surface 85 into which the treatment liquid flows in, and a discharge port 10b for discharging the treatment liquid outward in the radial direction. The inflow port 10a is provided at the boundary between the guide surface 85 and the discharge path section screen 86. The inflow port 10a is located at the radial inner end of the treatment liquid discharge path 10, and the discharge port 10b is located at the radial outer end of the treatment liquid discharge path 10.

The width of the blocking space SS in the vertical direction (blocking space width D1) is larger than the width of the gap G (gap width D2) between the peripheral edge of the substrate W and the inner end surface 84 of the annular member 8 in the horizontal direction. The blocking space width D1 is larger than the width of the treatment liquid discharge path 10 (discharge path width D3) in the vertical direction.

Here, the blocking space width D1 includes a distance between the facing surface 6a in the vertical direction and the upper surface of the substrate W, and a distance between the inclined lower surface 81a and the guide surface 85 in the vertical direction. Therefore, at the boundary between the guide surface 85 and the discharge path section screen 86, the cutoff space width D1 is equal to the discharge path width D3. However, at most points in the plan view, the cutoff space width D1 is larger than the discharge path width D3, and the average value of the cutoff space width D1 is larger than the discharge path width D3.

The distance between the facing surface 6a in the vertical direction and the upper surface of the substrate W is, for example, 10 mm. The gap width D2 and the discharge path width D3 are, for example, 1 mm, respectively. That is, since the gap width D2 and the discharge path width D3 are sufficiently smaller than the cutoff space width D1, the inflow of the atmosphere from the external space OS is restricted.

The connecting member 9 is provided in the treatment liquid discharge path 10, and is connected to the flat lower surface 80a of the wide portion 80 of the extension portion 66 and the discharge path section screen 86 of the annular member 8. FIG. 4 is a cross-sectional view taken along the line IV-IV shown in FIG. As shown in FIG. 4, the plurality of connecting members 9 are arranged at equal intervals in the rotation direction R of the substrate W. In the present embodiment, six connecting members 9 are provided. Each connecting member 9 is a columnar shape extending in the vertical direction.

With reference to FIG. 2 again, the processing cup 7 receives a plurality of guards 71 that receive the liquid scattered outward from the substrate W held by the spin chuck 5, and a plurality of guards 71 that receive the liquid guided downward by the plurality of guards 71. Includes a plurality of cups 72.

In this embodiment, an example is shown in which two guards 71 (first guard 71A and second guard 71B) and two cups 72 (first cup 72A and second cup 72B) are provided.

Each of the first cup 72A and the second cup 72B has the form of an annular groove that is open upward.

The first guard 71A is arranged so as to surround the spin base 21. The second guard 71B (inner guard) is arranged so as to surround the spin base 21 in the radial direction of the substrate W with respect to the first guard 71A (outer guard).

The first guard 71A and the second guard 71B each have a substantially cylindrical shape, and the upper end portion of each guard 71 is inclined inward so as to be inward in the radial direction.

Specifically, the first guard 71A includes a first cylindrical portion 75A that surrounds the opposing member 6 and the annular member 8 in a plan view, and a first annular portion 76A that extends inward in the radial direction from the upper end of the first cylindrical portion 75A. Have. The first annular portion 76A is inclined with respect to the horizontal direction so as to be upward as it goes inward in the radial direction.

The second guard 71B is arranged inward of the first cylindrical portion 75A and surrounds the opposing member 6 and the annular member 8 in a plan view. The second cylindrical portion 75B and the second cylindrical portion 75B are radially inward from the upper end. Includes a second annular portion 76B extending. The second ring portion 76B faces the first ring portion 76A from below. The second annular portion 76B is inclined with respect to the horizontal direction so as to be upward as it goes inward in the radial direction.

The first cup 72A receives the processing liquid guided downward by the first guard 71A. The second cup 72B is integrally formed with the first guard 71A, and receives the treatment liquid guided downward by the second guard 71B. The treatment liquid received by the first cup 72A is collected by a first treatment liquid recovery path (not shown) connected to the lower end of the first cup 72A. The treatment liquid received by the second cup 72B is collected by a second treatment liquid recovery path (not shown) connected to the lower end of the second cup 72B.

The processing unit 2 includes a guard elevating unit 74 that separately elevates and elevates the first guard 71A and the second guard 71B. The guard elevating unit 74 raises and lowers the first guard 71A between the lower position and the upper position. The guard elevating unit 74 raises and lowers the second guard 71B between the lower position and the upper position.

When both the first guard 71A and the second guard 71B are located at the upper positions, the processing liquid scattered from the substrate W is received by the second guard 71B. When the second guard 71B is located at the lower position and the first guard 71A is located at the upper position, the processing liquid scattered from the substrate W is received by the first guard 71A.

When both the first guard 71A and the second guard 71B are located at the lower position and the opposing member 6 is located at the upper position, the transfer robot CR carries the substrate W into the chamber 4 or the substrate from inside the chamber 4. W can be carried out.

The guard elevating unit 74 includes, for example, a first ball screw mechanism (not shown) coupled to the first guard 71A, a first motor (not shown) that applies a driving force to the first ball screw mechanism, and a second. It includes a second ball screw mechanism (not shown) coupled to the guard 71B and a second motor (not shown) that applies a driving force to the second ball screw mechanism. The guard elevating unit 74 is also referred to as a guard lifter.

FIG. 5 is a block diagram showing an electrical configuration of a main part of the substrate processing device 1. The controller 3 includes a microcomputer and controls a control target provided in the substrate processing device 1 according to a predetermined control program.

Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B in which a control program is stored. The controller 3 is configured to execute various controls for substrate processing by the processor 3A executing a control program.

In particular, the controller 3 includes a transfer robot IR, CR, a suction unit 27, a spin motor 23, a guard elevating unit 74, an opposing member rotating unit 62, an opposing member elevating unit 61, a suction valve 28, a chemical solution valve 50, and an upper rinse solution valve 51. , The upper replacement liquid valve 52, the inert gas valve 53, the lower rinse liquid valve 54, and the lower replacement liquid valve 55 are programmed to control.

By controlling the valve by the controller 3, the presence or absence of the discharge of the treatment liquid or the inert gas from the corresponding nozzle and the discharge flow rate of the treatment liquid or the inert gas from the corresponding nozzle are controlled.

FIG. 6 is a flow chart for explaining an example of substrate processing by the substrate processing apparatus 1. FIG. 6 mainly shows the processing realized by the controller 3 executing the program. 7A to 7F are schematic views for explaining the state of each step of the substrate processing. In the following, we will mainly refer to FIGS. 2 and 6. 7A to 7F will be referred to as appropriate.

In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 6, a substrate loading step (step S1), a blocking space partitioning step (step S2), an atmosphere replacement step (step S3), a prerinsing step (step S4), The chemical liquid supply step (step S5), the rinsing step (step S6), the replacement liquid supply step (step S7), the spin dry step (step S8), and the substrate unloading step (step S9) are executed.

First, as shown in FIG. 7A, the unprocessed substrate W is carried into the processing unit 2 from the carrier C by the transfer robot CR and passed to the spin chuck 5 (step S1). As a result, the substrate W is held horizontally by the spin chuck 5 (board holding step). When the substrate W is carried in, the facing member 6 is retracted to the upper position, and the plurality of guards 71 are retracted to the lower position.

The holding of the substrate W by the spin chuck 5 is continued until the spin drying step (step S8) is completed. The guard elevating unit 74 has the first guard 71A and the second guard so that at least one guard 71 is located at the upper position from the start of the substrate holding step to the end of the spin drying step (step S8). Adjust the height position of 71B.

Next, after the transfer robot CR has evacuated to the outside of the processing unit 2, the blocking space partitioning step (step S2) for partitioning the blocking space SS is executed. Specifically, as shown in FIG. 7B, the facing member elevating unit 61 moves the facing member 6 to the blocking space section position. As a result, the blocking space SS is partitioned by the substrate W, the facing member 6, and the annular member 8.

Next, an atmosphere replacement step (step S3) of replacing the atmosphere of the cutoff space SS with an inert gas and a prerinsing step (step S4) of cleaning the upper surface of the substrate W with a rinsing liquid are executed in parallel.

Specifically, the spin motor 23 starts rotating the substrate W. Then, the opposing member rotation unit 62 starts rotating the opposing member 6 and the annular member 8. The opposing member rotation unit 62 rotates the opposing member 6 and the annular member 8 synchronously with the substrate W (synchronous rotation step). The synchronous rotation of the substrate W, the opposing member 6, and the annular member 8 is continued until the spin-drying step (step S8) is completed.

Then, the inert gas valve 53 and the upper rinse liquid valve 51 are opened with the facing member 6 located at the blocking space section position. When the inert gas valve 53 is opened, as shown in FIG. 7C, the inert gas is discharged from the central nozzle 11 and the inert gas is supplied to the shutoff space SS. When the upper rinse liquid valve 51 is opened, a rinse liquid such as DIW is discharged from the central nozzle 11 toward the upper surface of the substrate W on the upper surface of the substrate W, as shown in FIG. 7C. The discharged rinse liquid lands on the central region of the upper surface of the substrate W.

Centrifugal force due to the rotation of the substrate W acts on the rinse liquid that has landed on the upper surface of the substrate W. Therefore, the rinse liquid is spread over the entire upper surface of the substrate W by centrifugal force. The rinse liquid that has reached the peripheral edge of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Then, the rinse liquid that has flowed into the treatment liquid discharge path 10 is discharged to the outside of the cutoff space SS. The gap G is closed by the rinsing liquid moving from the peripheral edge of the upper surface of the substrate W to the guide surface 85.

When the supply of the inert gas to the blocking space SS is started, the air in the blocking space SS begins to be pushed out by the inert gas from the gap G and the treatment liquid discharge path 10. By continuing to supply the inert gas to the blocking space SS, all the air in the blocking space SS is discharged, and the inert gas fills the blocking space SS. That is, the atmosphere in the blocking space SS is replaced by the inert gas. The Inactive gas valve 53 is maintained in the open state until the spin drying step (step S8) is completed.

In the prerinsing process, the gap G between the annular member 8 and the substrate W is closed by the rinsing liquid. Therefore, the movement of the inert gas through the gap G is suppressed. Further, the rinse liquid is discharged from the cutoff space SS to the external space OS via the treatment liquid discharge path 10. Therefore, the inflow of the atmosphere into the cutoff space SS through the treatment liquid discharge passage 10 does not occur unless a large force that pushes away the rinse liquid in the treatment liquid discharge passage 10 acts. On the other hand, since the inert gas is supplied to the cutoff space SS, the air in the cutoff space SS is discharged to the external space OS via the treatment liquid discharge path 10 so that the pressure in the cutoff space SS does not rise too much. Will be done.

Therefore, the atmosphere in the blocking space SS can be replaced with an inert gas while limiting the inflow of the atmosphere from the external space OS to the blocking space SS.

Although FIG. 7C shows a state in which the treatment liquid discharge path 10 is filled with the rinse liquid, when the inert gas moves to the external space OS through the treatment liquid discharge passage 10, the rinse liquid is shown. A part of the (treatment liquid) is pushed away to move in the treatment liquid discharge path 10 (the same applies to the drawings after FIG. 7D).

Next, a chemical solution supply step (step S5) of supplying the chemical solution to the upper surface of the substrate W is executed in order to treat the upper surface of the substrate W with the chemical solution.

Specifically, the upper rinse liquid valve 51 is closed and the chemical liquid valve 50 is opened in a state where the shutoff space SS is filled with the inert gas. As a result, the discharge of the rinse liquid from the central nozzle 11 is stopped, and the chemical liquid such as DHF is discharged from the central nozzle 11 toward the upper surface of the substrate W.

As shown in FIG. 7D, the discharged chemical solution lands on the central region of the upper surface of the substrate W. The chemical solution supply step is an example of a treatment solution supply step of supplying the treatment solution to the upper surface of the substrate W in a state where the atmosphere in the blocking space SS is replaced with the inert gas. The prerinsing step is performed before the treatment liquid supply step.

Centrifugal force due to the rotation of the substrate W acts on the chemical solution that has landed on the upper surface of the substrate W. Therefore, the chemical solution spreads over the entire upper surface of the substrate W by centrifugal force and replaces the rinse solution existing on the upper surface of the substrate W. The chemical solution that has reached the peripheral edge of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Then, the chemical solution is discharged to the outside of the blocking space SS via the treatment liquid discharge path 10 (chemical solution discharge step, treatment liquid discharge step).

Further, in the chemical solution supply process, a plurality of lower rinse solution valves 54 are opened. As a result, the rinsing liquid is started to be discharged from the plurality of first lower surface nozzles 12. The rinse liquids discharged from the plurality of first lower surface nozzles 12 land on the lower surface of the substrate W.

Centrifugal force due to the rotation of the substrate W acts on the rinse liquid that has landed on the lower surface of the substrate W. As a result, the rinse liquid spreads to the peripheral edge of the lower surface of the substrate W. The lower surface of the substrate W is protected by spreading the rinse liquid to the peripheral edge of the lower surface of the substrate W (bottom surface protection step, protective liquid supply step). The rinse liquid functions as a protective liquid that protects the lower surface of the substrate W. Therefore, the first lower surface nozzle 12 functions as a protective liquid supply unit.

The rinse liquid that has reached the peripheral edge of the lower surface of the substrate W is guided to the lower surface of the annular member 8 and then scatters radially outward from the annular member 8.

Next, a rinsing step (step S6) of supplying a rinsing solution to the upper surface of the substrate W to wash away the chemical solution existing on the upper surface of the substrate W is executed. Specifically, the chemical solution valve 50 is closed and the upper rinse solution valve 51 is opened in a state where the shutoff space SS is filled with the inert gas. As a result, the discharge of the chemical solution from the central nozzle 11 is stopped, and the rinse solution such as DIW is discharged from the central nozzle 11 toward the upper surface of the substrate W. As shown in FIG. 7E, the discharged rinse liquid lands on the central region of the upper surface of the substrate W. The rinse liquid supply step is an example of a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate W in a state where the atmosphere in the blocking space SS is replaced with the inert gas.

Centrifugal force due to the rotation of the substrate W acts on the rinse liquid that has landed on the upper surface of the substrate W. Therefore, the rinse solution spreads over the entire upper surface of the substrate W by centrifugal force and replaces the chemical solution existing on the upper surface of the substrate W. The rinse liquid that has reached the peripheral edge of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Then, the rinse liquid is discharged to the outside of the cutoff space SS via the treatment liquid discharge passage 10 (rinse liquid discharge step, treatment liquid discharge step). In the rinsing process, the plurality of lower rinsing liquid valves 54 are maintained in an open state.

Next, a replacement liquid supply step (step S7) of supplying the replacement liquid to the upper surface of the substrate W in order to replace the rinse liquid existing on the upper surface of the substrate W with the replacement liquid is executed. Specifically, the upper rinse liquid valve 51 is closed and the upper replacement liquid valve 52 is opened in a state where the shutoff space SS is filled with the inert gas. As a result, the discharge of the rinse liquid from the central nozzle 11 is stopped, and the replacement liquid such as IPA is discharged from the central nozzle 11 toward the upper surface of the substrate W. As shown in FIG. 7F, the discharged replacement liquid lands on the central region of the upper surface of the substrate W. The replacement liquid supply step is an example of a treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate W in a state where the atmosphere in the blocking space SS is replaced with the inert gas.

Centrifugal force due to the rotation of the substrate W acts on the replacement liquid that has landed on the upper surface of the substrate W. Therefore, the replacement liquid spreads over the entire upper surface of the substrate W by centrifugal force, and replaces the rinse liquid existing on the upper surface of the substrate W. The replacement liquid that has reached the peripheral edge of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Then, the replacement liquid is discharged to the outside of the cutoff space SS via the treatment liquid discharge passage 10 (replacement liquid discharge step, treatment liquid discharge step).

In the replacement liquid supply step, the plurality of lower rinse liquid valves 54 are closed, and the plurality of lower replacement liquid valves 55 are opened. As a result, the discharge of the rinse liquid from the plurality of first lower surface nozzles 12 is stopped, and the discharge of the replacement liquid such as IPA from the plurality of second lower surface nozzles 13 is started. The replacement liquids discharged from the plurality of second lower surface nozzles 13 land on the lower surface of the substrate W.

Centrifugal force due to the rotation of the substrate W acts on the replacement liquid that has landed on the lower surface of the substrate W. As a result, the replacement liquid spreads to the peripheral edge of the lower surface of the substrate W (bottom surface protection step, protective liquid supply step). The replacement liquid functions as a protective liquid that protects the lower surface of the substrate W. Therefore, the second lower surface nozzle 13 functions as a protective liquid supply unit.

The replacement liquid replaces the rinse liquid existing on the lower surface of the substrate W by spreading to the peripheral edge of the lower surface of the substrate W. The replacement liquid that has reached the peripheral edge of the lower surface of the substrate W is guided to the lower surface of the annular member 8 and then scatters radially outward from the annular member 8.

Next, the spin dry step (step S8) is executed. Specifically, the upper replacement liquid valve 52 and the plurality of lower replacement liquid valves 55 are closed. As a result, the supply of the replacement liquid to the upper surface and the lower surface of the substrate W is stopped.

Then, the spin motor 23 accelerates the rotation of the substrate W and rotates the substrate W at high speed. As a result, a large centrifugal force acts on the replacement liquid remaining on the substrate W, and the replacement liquid on the substrate W is shaken off around the substrate W. By continuing to supply the inert gas to the blocking space SS in the spin-drying step, evaporation of the replacement liquid is promoted.

Then, the spin motor 23 stops the rotation of the substrate W, and the opposing member rotating unit 62 stops the rotation of the opposing member 6 and the annular member 8. The guard elevating unit 74 moves the first guard 71A and the second guard 71B to the lower position. The inert gas valve 53 is closed. Then, the facing member elevating unit 61 moves the facing member 6 to the upper position.

The transfer robot CR enters the processing unit 2, scoops the processed substrate W from the chuck pin 20 of the spin chuck 5, and carries it out of the processing unit 2 (step S9). The substrate W is passed from the transfer robot CR to the transfer robot IR, and is housed in the carrier C by the transfer robot IR.

Next, the state of the treatment liquid near the annular member 8 in the substrate treatment will be described. The state of the treatment liquid in the vicinity of the annular member 8 is the same regardless of the type of the treatment liquid. That is, the same explanation can be made in any of the pre-rinse step, the chemical solution supply step, the rinse step, and the replacement solution supply step.

FIG. 8 is a schematic diagram for explaining the state of the treatment liquid in the vicinity of the annular member 8 when the treatment liquid is discharged from the cutoff space SS. Centrifugal force acts on the treatment liquid existing on the upper surface of the substrate W, and the annular member 8 is arranged close to the peripheral edge of the upper surface of the substrate W. Therefore, the processing liquid that has reached the peripheral edge of the upper surface of the substrate W does not fall downward from the gap G between the peripheral edge of the substrate W and the annular member 8, and is radially outward from the peripheral edge of the upper surface of the substrate W. To reach the guide surface 85. That is, the guide surface 85 moves the processing liquid existing on the upper surface of the substrate W radially outward from the peripheral edge of the upper surface of the substrate W by the centrifugal force due to the rotation of the substrate W.

The treatment liquid that has moved on the guide surface 85 moves outward in the radial direction on the guide surface 85 and flows into the inflow port 10a of the treatment liquid discharge path 10. The treatment liquid that has flowed into the inflow port 10a of the treatment liquid discharge passage 10 moves horizontally in the treatment liquid discharge passage 10 outward in the radial direction and is discharged from the discharge port 10b.

Before the treatment liquid flows into the treatment liquid discharge path 10, the treatment liquid on the guide surface 85 may collide with the inclined lower surface 81a of the extending portion 66 of the facing member 6. In this case, a backflow (flow inward in the radial direction) is generated in the treatment liquid on the guide surface 85, and the liquid filling 100 is formed by the generation of this backflow.

When backflow occurs, the treatment liquid that goes inward in the radial direction and the treatment liquid that goes outward in the radial direction may collide with each other, and the treatment liquid may scatter in the cutoff space SS. When the processing liquid scattered in the cutoff space SS reattaches to the upper surface of the substrate W, particles are generated on the substrate W.

Unlike this embodiment, in the configuration in which the guide surface 85 is not provided, the inflow port 10a of the processing liquid discharge path 10 is arranged near the peripheral edge of the substrate W, so that the backflow in the processing liquid is caused by the substrate W. May occur on the top surface of.

In this embodiment, the inflow port 10a of the treatment liquid discharge path 10 is provided at the boundary between the discharge path section screen 86 connected to the outer end of the guide surface 85 in the radial direction and the guide surface 85. Therefore, even if the backflow in the treatment liquid occurs, the location where it occurs is not on the substrate W but on the guide surface 85. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate W. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

In the substrate processing described above, the first guard 71A and the second guard so that at least one guard 71 is located at the upper position from the start of the substrate holding step to the end of the spin drying step (step S8). The height position of 71B is adjusted. However, in particular, in the chemical solution supply step (step S4), the guard 71 is preferably arranged as described below. FIG. 9 is a schematic view for explaining how the guard 71 receives the processing liquid in the substrate processing.

Specifically, while the treatment liquid (DHF) is discharged from the discharge port 10b, the radial inner end 76a of the first annular portion 76A of the first guard 71A and the second guard 71B in the vertical direction are discharged. The treatment liquid discharge path 10 is positioned between the annular portion 76B and the radial inner end 76b. Specifically, the guard elevating unit 74 is provided with a treatment liquid discharge path 10 between the radial inner end 76a of the first annular portion 76A and the radial inner end 76b of the second annular portion 76B in the vertical direction. The first guard 71A and the second guard 71B are moved so as to be positioned (guard moving step).

More specifically, move or maintain the first guard 71A to the upper position. As a result, in the vertical direction, the radial inner end 76a of the first annular portion 76A is moved so as to be located above the discharge port 10b and below the upper end of the extension portion 66. The second guard 71B is moved so that the radial inner end 76b of the second annular portion 76B is located below the discharge port 10b and above the lower end of the annular member 8 in the vertical direction.

When the treatment liquid is discharged from the discharge port 10b of the treatment liquid discharge path 10, the first annular portion 76A of the first guard 71A is located above the discharge port 10b in the vertical direction. Therefore, the processing liquid discharged from the discharge port 10b passes between the first annular portion 76A and the second annular portion 76B and is received by the first cylindrical portion 75A. The treatment liquid received by the first cylindrical portion 75A may bounce off the first cylindrical portion 75A.

The radial inner end 76b of the second annular portion 76B is located below the discharge port 10b in the vertical direction. Therefore, the treatment liquid bounced off from the first guard 71A does not move inward in the radial direction from the second guard 71B, but adheres to the second annular portion 76B from above or radially to the second cylindrical portion 75B. It adheres from the outside. Therefore, it is possible to prevent the treatment liquid bounced off from the first guard 71A from adhering to the lower surface of the substrate W.

Since the radial inner end 76b of the second annular portion 76B is located above the lower end of the annular member 8 in the vertical direction, the treatment liquid bounced off from the first guard 71A is the second annular portion 76B and the annular member. It is possible to suppress the movement inward in the radial direction from the gap between the eight.

Further, the lower surface of the substrate W is protected by a protective liquid (DIW). Therefore, the lower surface of the substrate W can be protected from the mist of the processing liquid floating near the lower surface of the substrate W. Further, while the treatment liquid is discharged from the discharge port 10b, the radial inner end 76b of the second annular portion 76B is located below the discharge port 10b and above the lower end of the annular member 8. Therefore, the second guard 71B can receive the protective liquid discharged outward from the lower surface of the substrate W. That is, the treatment liquid discharged from the upper surface of the substrate W can be received by the first guard 71A, and the protective liquid discharged outward from the lower surface of the substrate W can be received by the second guard 71B. Therefore, the treatment liquid and the protection liquid can be recovered while avoiding mixing of the treatment liquid and the protection liquid.

The protective liquid moves radially outward by centrifugal force and reaches the lower inclined surface 87 of the annular member 8 from the lower surface of the substrate W. The lower inclined surface 87 is inclined so as to be downward as it goes outward in the radial direction.

Therefore, the protective liquid is scattered from the annular member 8 in the direction along the lower inclined surface 87, that is, in the diagonally downward direction, and is received by the second cylindrical portion 75B of the second guard 71B. Therefore, it is possible to prevent the protective liquid from scattering in the diagonally upward direction. As a result, it is possible to prevent the treatment liquid scattered obliquely upward from entering between the first annular portion 76A of the first guard 71A and the second annular portion 76B of the second guard 71B.

According to the first embodiment, the blocking space SS is partitioned by the substrate W, the opposing member 6, and the annular member 8 by moving the opposing member 6 together with the annular member 8 to the blocking space partition position. By supplying the inert gas toward the upper surface of the substrate W in the state where the blocking space SS is formed, the atmosphere in the blocking space SS can be replaced with the inert gas. Thereby, the oxygen concentration in the cutoff space SS, that is, the oxygen concentration in the atmosphere near the upper surface of the substrate W can be reduced.

In the cut-off space SS, the inflow of atmosphere from the external space OS is restricted. Therefore, once the atmosphere in the blocking space SS is replaced with the inert gas, it is easy to maintain the oxygen concentration in the atmosphere in the blocking space SS in a reduced state.

In a state where the atmosphere in the blocking space SS is replaced with an inert gas, the treatment liquid is supplied to the upper surface of the substrate W to suppress an increase in oxygen concentration in the treatment liquid, and the upper surface of the substrate W is covered with the treatment liquid. Can be processed.

The treatment liquid supplied to the upper surface of the substrate W moves toward the peripheral edge of the upper surface of the substrate W by centrifugal force. The processing liquid that has reached the peripheral edge of the upper surface of the substrate W moves onto the guide surface 85 of the annular member 8 without scattering from the substrate W. The treatment liquid existing on the guide surface 85 is discharged to the outside of the cutoff space SS via the treatment liquid discharge path 10. Since the guide surface 85 exists between the peripheral edge portion of the substrate W and the processing liquid discharge path 10, the peripheral edge portion of the substrate W is sufficiently separated from the extending portion 66 of the facing member 6. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate W from rebounding from the facing member 6 and reattaching to the upper surface of the substrate W. Even if the processing liquid discharged from the upper surface of the substrate W rebounds from the opposing member 6, most of the processing liquid adheres to the guide surface 85 located radially outward of the upper surface of the substrate W. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

As a result of the above, the oxygen concentration in the atmosphere near the upper surface of the substrate W can be reduced, and the generation of particles on the upper surface of the substrate W can be suppressed.

Further, unlike the first embodiment, when the peripheral edge of the upper surface of the substrate W and the annular member 8 are not sufficiently close to each other, the treatment liquid is not limited to the guide surface 85 and the treatment liquid discharge path 10. It is also discharged from the gap G. As a result, the treatment liquid on the guide surface 85 may be dispersed to form droplets, which may bounce off the guide surface 85 and reattach to the substrate W. In the first embodiment, the gap width D2 is sufficiently small, and the peripheral edge of the upper surface of the substrate W and the annular member 8 are sufficiently close to each other, so that the treatment liquid does not become droplets and is transmitted from the upper surface of the substrate W. It is possible to move to the guide surface 85. Therefore, the generation of particles can be suppressed.

According to the first embodiment, the discharge path width D3 is smaller than the cutoff space width D1. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path 10 is relatively small. Therefore, while the treatment liquid is discharged to the outside of the cutoff space SS through the treatment liquid discharge passage 10, the atmosphere outside the cutoff space SS can be suppressed from flowing in through the treatment liquid discharge passage 10. Therefore, the upper surface of the substrate W is treated while suppressing an increase in the oxygen concentration in the treatment liquid by supplying the treatment liquid to the upper surface of the substrate W in a state where the atmosphere in the blocking space SS is replaced with the inert gas. Can be treated with liquid.

In the first embodiment, the inflow port 10a of the treatment liquid discharge path 10 is provided at the boundary between the discharge path section screen 86 connected to the outer end of the guide surface 85 in the radial direction and the guide surface 85. Therefore, even if the backflow in the treatment liquid occurs, the location where it occurs is not on the substrate W but on the guide surface 85. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate W. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

Unlike this embodiment, it is possible to provide a step between the guide surface 85 and the discharge path section screen 86. Even in this case, the reattachment of the treatment liquid can be suppressed as compared with the configuration in which the guide surface 85 is not provided. However, there is a risk that the treatment liquid will adhere to the splashed treatment liquid due to the step and the treatment liquid will reattach to the upper surface of the substrate. As a result, particles may be generated on the upper surface of the substrate W.

Therefore, according to the first embodiment, the annular member 8 has a discharge path section screen 86 for partitioning the treatment liquid discharge path 10 together with the extension portion 66. The discharge channel screen 86 and the guide surface 85 form a single flat surface that is horizontally flat. Therefore, the treatment liquid flowing on the guide surface 85 can be smoothly flowed into the treatment liquid discharge path 10. Therefore, it is possible to suppress the scattering of the treatment liquid in the cutoff space SS, and it is possible to suppress the generation of particles due to the scattering of the treatment liquid.

If the difference between the rotation speed of the substrate W and the rotation speed of the opposing member 6 and the annular member 8 is large, the airflow in the cutoff space SS may be disturbed. When the air flow is turbulent, a force acts on the treatment liquid on the upper surface of the substrate W due to the air flow, and the upper surface of the substrate W may be locally exposed or the treatment liquid may be scattered in the cutoff space SS. According to the first embodiment, the substrate W, the annular member 8, and the opposing member 6 that partition the blocking space SS rotate synchronously. Therefore, it is possible to suppress the occurrence of airflow turbulence in the cutoff space SS.

In the first embodiment, the gap G is closed by the rinsing liquid by executing the pre-rinsing step. Therefore, at the start of the chemical solution supply step after the pre-rinse step, the state in which the gap G is closed by the rinse solution is maintained until the chemical solution reaches the vicinity of the gap G. Therefore, the inflow of air from the gap G is restricted from the start of the chemical solution supply. Therefore, the oxygen concentration in the cutoff space SS is reduced when the chemical solution is supplied.

Further, also in the subsequent rinsing step and the replacement liquid supply step, the gap G is closed by the rinsing liquid and the replacement liquid, respectively. Therefore, the inflow of air from the gap G is suppressed while the processing liquid is supplied to the upper surface of the substrate W.

Unlike the first embodiment, the annular member 8 does not rotate in the configuration in which the facing member 6 is not provided. Therefore, the processing liquid that has moved outward in the radial direction from the peripheral edge of the substrate W may remain on the guide surface 85. Particles may be generated on the substrate W due to the treatment liquid remaining on the guide surface 85 being scattered in the atmosphere.

Therefore, in the first embodiment, since the annular member 8 is connected to the opposing member 6, the annular member 8 can be rotated together with the opposing member 6 when the processing liquid on the substrate W is discharged. Therefore, the treatment liquid is unlikely to remain on the guide surface 85, and particles are unlikely to be generated on the substrate W. Further, a plurality of connecting members 9 for connecting the facing member 6 and the annular member 8 are provided in the processing liquid discharge path 10. Therefore, as compared with the configuration in which the connecting member 9 is provided inward in the radial direction with respect to the processing liquid discharge path 10, when the processing liquid colliding with the connecting member 9 bounces off, the bounced processing liquid is transferred to the substrate W. Hard to adhere to the top surface.

10A and 10B are schematic views for explaining another example of substrate processing. In FIGS. 10A and 10B, the connecting member 9 is not shown for convenience of explanation. In the substrate processing of the other example, as shown in FIG. 10B, the position of the opposing member 6 when the upper end portion of the inner end surface 84 of the annular member 8 is at the same height position as the upper surface of the substrate W is the first position. It is called the blocked space section position. The first blocking space section position is the same position as the blocking space section position shown in FIG.

In the substrate processing of the other example, as shown in FIG. 10A, in the processing liquid supply step, the opposing member elevating unit 61 (see FIG. 2) arranges the opposing member 6 at the second blocking space section position.

In the second blocking space partition position, the blocking space SS is partitioned by the substrate W, the facing member 6, and the annular member 8 in a state where the upper end of the inner end surface 84 of the annular member 8 is located above the upper surface of the substrate W. It is the position of the opposing member 6 when it is made.

With the facing member 6 located at the second blocking space section position, a treatment liquid such as a chemical solution is supplied from the central nozzle 11 toward the upper surface of the substrate W. As a result, the treatment liquid is received by the inner end surface 84 of the annular member 8 and the upper surface of the substrate W to form a liquid pool 101 of the treatment liquid (liquid pool formation step).

Therefore, the upper surface of the substrate W is treated by the treatment liquid in the liquid pool 101. Therefore, if the amount of processing liquid required for forming the liquid pool 101 is supplied to the upper surface of the substrate W, the upper surface of the substrate W can be processed. Therefore, the consumption of the processing liquid can be reduced as compared with the configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being received by the inner end surface 84. The second blocking space section position is also referred to as a liquid pool forming position.

Then, after a predetermined time has elapsed from the formation of the liquid pool 101, as shown in FIG. 10B, the opposing member elevating unit 61 (see FIG. 2) moves the opposing member 6 to the first blocking space section position. .. That is, the upper end portion of the inner end surface 84 of the annular member 8 is moved to the same height position as the upper surface of the substrate W. In FIG. 10B, the opposing member 6 and the annular member 8 when the opposing member 6 is located at the second blocking space partition position are shown by a two-dot chain line.

By moving the facing member 6 to the position of the first blocking space section, the processing liquid existing on the upper surface of the substrate W is released from the liquid receiving by the inner end surface 84. Therefore, the treatment liquid moves outward in the radial direction due to the centrifugal force, and the liquid pool 101 is removed from the upper surface of the substrate W (liquid pool elimination step).

The treatment liquid that has moved to the outside of the peripheral edge of the substrate W due to centrifugal force smoothly flows into the treatment liquid discharge path 10 via the guide surface 85 (see FIG. 8). Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

Next, a modification of the substrate processing device 1 according to the first embodiment will be described. 11A and 11B are schematic views for explaining a modification of the substrate processing apparatus 1 according to the first embodiment. In FIGS. 11A and 11B, the connecting member 9 is not shown for convenience of explanation.

In the annular member 8 according to the modified example of the first embodiment, the guide surface 85 is an inclined surface as shown in FIG. 11A. The guide surface 85 according to the modified example is inclined so as to be upward as it goes outward in the radial direction. Further, in the annular member 8 according to the modified example of the first embodiment, the lower inclined surface 87 is not provided, and the lower flat surface 88 is connected to the lower end of the inner end surface 84.

Further, in this modification, the boundary 6c between the flat lower surface 80a of the wide portion 80 of the opposing member 6 and the inclined lower surface 81a of the connecting portion 81 of the opposing member 6 is formed between the guide surface 85 of the annular member 8 and the discharge path of the annular member 8. It is located inward in the radial direction from the boundary 8c with the ward screen 86.

When the facing member 6 is located at the blocking space section position, the upper end of the inner end surface 84 is located at the same height as the upper surface of the substrate W.

Even in this modification, it is clear that the cutoff space width D1 is larger than the discharge path width D3 and the average value of the cutoff space width D1 is larger than the discharge path width D3 at most points in the plan view. Is.

In the substrate processing by the substrate processing apparatus 1 according to the first embodiment, a processing liquid such as a chemical solution is supplied from the central nozzle 11 toward the upper surface of the substrate in a state where the opposing member 6 is located at the blocking space section position. As a result, as shown in FIG. 11A, the treatment liquid is received by the guide surface 85 of the annular member 8 and the upper surface of the substrate W to form a liquid pool 101 of the treatment liquid (liquid pool formation step). Therefore, the upper surface of the substrate W is treated by the treatment liquid in the liquid pool 101. Therefore, if the amount of processing liquid required for forming the liquid pool 101 is supplied to the upper surface of the substrate W, the upper surface of the substrate W can be processed. Therefore, the consumption of the processing liquid can be reduced as compared with the configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being received by the inclined guide surface 85.

Then, after a predetermined time has elapsed from the formation of the liquid pool 101, the spin motor 23 accelerates the rotation of the substrate W (the substrate acceleration step), as shown in FIG. 11B. Specifically, the rotation speed of the substrate W is changed from a predetermined liquid pool formation speed (for example, 10 rpm) to a liquid pool discharge speed (for example, 1000 rpm). In this modification, the guide surface 85 is inclined upward as it goes outward in the radial direction. Therefore, by accelerating the rotation of the substrate W and applying a centrifugal force to the liquid pool 101, the guide surface 85 can be smoothly raised on the processing liquid. Therefore, the processing liquid moves outward in the radial direction, and the liquid pool 101 is removed from the upper surface of the substrate W (liquid pool removing step). The treatment liquid that has climbed the guide surface 85 smoothly flows into the treatment liquid discharge path 10. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

Here, the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is located at a position where it overlaps the boundary 8c between the guide surface 85 and the discharge path section screen 86 in a plan view, or the boundary 6c is in the radial direction with respect to the boundary 8c. When it is located inward, the treatment liquid that goes up the guide surface 85 may collide with the inclined lower surface 81a. In this case, there is a possibility that a backflow that causes the treatment liquid to be blocked and particles to be generated may be generated in the treatment liquid on the guide surface 85.

As shown in FIGS. 11A and 11B, the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is configured to be located radially inward from the boundary 8c between the guide surface 85 and the discharge path section screen 86. For example, the treatment liquid that climbs the guide surface 85 collides with the flat lower surface 80a instead of the inclined lower surface 81a. If so, the treatment liquid smoothly flows into the treatment liquid discharge path 10 without being blocked.

<Second Embodiment>
FIG. 12 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit 2P provided in the substrate processing apparatus 1 according to the second embodiment of the present invention. In FIG. 12 and FIG. 13 described later, the same reference numerals as those in FIG. 1 and the like are added to the same configurations as those shown in FIGS. 1 to 11B, and the description thereof will be omitted.

In the processing unit 2P according to the second embodiment, the form of substrate holding is different from that of the processing unit 2 according to the first embodiment (see FIG. 2).

Specifically, the spin chuck 5P of the processing unit 2P does not include the suction unit 27, but includes a plurality of chuck pins 20 that grip the peripheral edge of the substrate W. The plurality of chuck pins 20 are arranged on the upper surface of the spin base 21 at intervals in the circumferential direction (rotation direction R). The plurality of chuck pins 20 can be opened and closed between a closed state in which the substrate W is gripped by contacting the peripheral end of the substrate W and an open state in which the substrate W is retracted from the peripheral end.

Further, the processing unit 2P according to the second embodiment does not include the plurality of first lower surface nozzles 12 and the plurality of second lower surface nozzles 13, but includes the lower surface nozzle 14.

The lower surface nozzle 14 is inserted into a through hole 21a that opens at the center of the upper surface of the spin base 21 and a hollow rotating shaft 22. The discharge port 14a of the lower surface nozzle 14 is exposed from the upper surface of the spin base 21. The discharge port 14a of the lower surface nozzle 14 faces the central region of the lower surface (lower surface) of the substrate W from below.

One end of a common pipe 46 that commonly guides the rinse liquid and the replacement liquid to the bottom surface nozzle 14 is connected to the bottom surface nozzle 14. At the other end of the common pipe 46, a lower rinse liquid pipe 47 that guides the rinse liquid to the common pipe 46 and a lower replacement liquid pipe 48 that guides the replacement liquid to the common pipe 46 are connected.

When the lower rinse liquid valve 57 interposed in the lower rinse liquid pipe 47 is opened, the rinse liquid is discharged from the lower surface nozzle 14 toward the central region of the lower surface of the substrate W in a continuous flow. When the lower replacement liquid valve 58 interposed in the lower replacement liquid pipe 48 is opened, the replacement liquid is discharged from the lower surface nozzle 14 toward the central region of the lower surface of the substrate W in a continuous flow.

The lower gas flow path 90 is formed by the space between the lower surface nozzle 14 and the through hole 21a of the spin base 21. The lower gas flow path 90 is connected to the inert gas pipe 49 inserted in the space between the inner peripheral surface of the rotating shaft 22 and the lower surface nozzle 14. When the inert gas valve 59 interposed in the inert gas pipe 49 is opened, the inert gas is discharged from the lower gas flow path 90 toward the portion around the central portion of the lower surface of the substrate W.

The lower surface nozzle 14 is an example of a lower rinse liquid supply unit that supplies the rinse liquid to the lower surface of the substrate W. Further, the lower surface nozzle 14 is an example of a lower replacement liquid supply unit that supplies the replacement liquid to the lower surface of the substrate W. The bottom nozzle 14 is an example of a lower inert gas supply unit that supplies the inert gas toward the lower surface of the substrate W.

The opposing member 6, the annular member 8 and the connecting member 9 provided in the processing unit 2P have substantially the same shape as the opposing member 6, the annular member 8 and the connecting member 9 provided in the processing unit 2 according to the first embodiment, respectively. .. However, the structure of the annular member 8 provided in the processing unit 2P is slightly different from that of the annular member 8 according to the first embodiment. FIG. 13 is a view of the periphery of the annular member 8 provided in the processing unit 2P according to the second embodiment as viewed from above.

The annular member 8 provided in the processing unit 2P is formed with a plurality of recesses 8a for avoiding interference with the plurality of chuck pins 20. The plurality of recesses 8a are provided in the same number as the plurality of chuck pins 20, and are arranged in the rotation direction R at the same interval as the interval between the chuck pins 20.

The substrate processing apparatus 1 according to the second embodiment can execute the same substrate processing (see FIGS. 6 to 9) as the substrate processing apparatus 1 according to the first embodiment. However, in the substrate processing by the substrate processing apparatus 1 according to the second embodiment, the lower surface of the substrate W is protected by discharging the rinse liquid or the replacement liquid from the lower surface nozzle 14 (bottom surface protection step, protective liquid supply step). .. In the second embodiment, the lower surface nozzle 14 functions as a protective liquid supply unit. Further, the atmosphere in the space between the lower surface of the substrate W and the spin base 21 may be replaced with the inert gas by blowing the inert gas toward the lower surface of the substrate W. In this case, the inflow of air (oxygen) into the cutoff space SS can be further suppressed.

According to the second embodiment, the same effect as that of the first embodiment is obtained. Further, also in the second embodiment, the substrate processing shown in FIGS. 10A and 10B can be executed, and the modified examples shown in FIGS. 11A and 11B can be applied.

<Third Embodiment>
FIG. 14 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit 2Q provided in the substrate processing apparatus 1 according to the third embodiment of the present invention. In FIGS. 14 and 15 to 17, which will be described later, the same reference numerals as those shown in FIGS. 1 and 13 are assigned to the same configurations as those shown in FIGS. 1 to 13 described above, and the description thereof will be omitted.

In the processing unit 2Q according to the third embodiment, the extending portion 66Q and the annular member 8Q of the opposing member 6Q are different from the processing unit 2 (see FIG. 2) according to the first embodiment. FIG. 15 is a cross-sectional view of the periphery of the opposing member 6Q and the annular member 8Q provided in the processing unit 2Q according to the third embodiment.

The extending portion 66Q of the opposing member 6Q according to the third embodiment includes a wide portion 110 having a width in the vertical direction larger than that of the disc portion 65, and a connecting portion 111 connecting the disc portion 65 and the wide portion 110. Including. The width of the connecting portion 111 in the vertical direction increases toward the outside in the radial direction.

The connecting portion 111 has an inclined lower surface 111a that is connected to the facing surface 6a and is inclined downward as it goes outward in the radial direction. The wide portion 110 has a vertical cylindrical surface 110a connected to the inclined lower surface 111a and extending in the vertical direction, and a flat lower surface 110b connected to the lower end of the vertical cylindrical surface 110a and flat in the horizontal direction.

The guide surface 85 is connected to the upper end of the inner end surface 84 and the radial inner end of the discharge path section screen 86. The guide surface 85 is flat in the horizontal direction. The discharge channel screen 86 is connected to the radial outer end of the guide surface 85 and is inclined downward as it goes outward in the radial direction, and the inclined screen 86A and the radial outer end of the inclined screen 86A. Includes a vertical section screen 86B connected to the edge and extending in the vertical direction.

The treatment liquid discharge path 10Q according to the third embodiment is connected to the cutoff space SS, is connected to the inclined discharge path 120, which is partitioned by the inclined lower surface 111a and the inclined section screen 86A, and is connected to the inclined discharge path 120, and is connected to the vertical cylindrical surface. Includes a vertical discharge path 121 partitioned by 110a and a vertical section screen 86B. The inflow port 10Qa of the treatment liquid discharge path 10Q is provided at the radial inner end of the inclined discharge path 120. The discharge port 10Qb of the treatment liquid discharge path 10Q is provided at the lower end of the vertical discharge path 121.

The width of the treatment liquid discharge path 10Q (discharge path width D3) is the distance between the inclined section screen 86A and the inclined lower surface 111a, or the distance between the vertical section screen 86B and the vertical cylindrical surface 110a. Also in the third embodiment, it is clear that the cutoff space width D1 is larger than the discharge path width D3 and the average value of the cutoff space width D1 is larger than the discharge path width D3 at most points in the plan view. is there.

In the third embodiment, when the facing member 6 is located at the blocking space section position, the upper end of the inner end surface 84 and the guide surface 85 are located at the same height as the upper surface of the substrate W.

The substrate processing apparatus 1 according to the third embodiment can execute the same substrate processing (see FIGS. 6 to 7F) as the substrate processing apparatus 1 according to the first embodiment.

Next, in the substrate processing according to the third embodiment, the state when the processing liquid is discharged from the cutoff space SS will be described. FIG. 16 is a schematic diagram for explaining the substrate processing using the substrate processing apparatus 1 according to the third embodiment.

Centrifugal force acts on the treatment liquid existing on the upper surface of the substrate W, and the annular member 8Q is arranged close to the peripheral edge of the upper surface of the substrate W. Therefore, the processing liquid that has reached the peripheral edge of the upper surface of the substrate W does not fall downward from the gap G between the peripheral edge of the substrate W and the annular member 8Q, and is radially outward from the peripheral edge of the upper surface of the substrate W. To reach the guide surface 85. That is, the guide surface 85 moves the processing liquid existing on the upper surface of the substrate W radially outward from the peripheral edge of the upper surface of the substrate W by the centrifugal force due to the rotation of the substrate W. The gap G is closed by the treatment liquid.

The treatment liquid that has moved on the guide surface 85 moves outward in the radial direction on the guide surface 85 and flows into the inflow port 10Qa of the treatment liquid discharge path 10Q. The treatment liquid that has flowed into the inflow port 10Qa of the treatment liquid discharge path 10Q moves outward in the radial direction in the inclined discharge path 120, and then moves downward in the vertical discharge path 121. After that, the treatment liquid is discharged from the discharge port 10Qb.

The treatment liquid on the guide surface 85 may collide with the inclined lower surface 111a of the extending portion 66 of the facing member 6Q. In this case, a backflow (flow inward in the radial direction) is generated in the treatment liquid on the guide surface 85, and the liquid filling 100 is formed by the generation of this backflow.

In the third embodiment, the inflow port 10Qa of the treatment liquid discharge path 10Q is provided at the boundary between the discharge path section screen 86Q connected to the outer end of the guide surface 85 in the radial direction and the guide surface 85. Therefore, even if the backflow in the treatment liquid occurs, the location where it occurs is not on the substrate W but on the guide surface 85. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate W. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W. Further, according to the third embodiment, the same effect as that of the first embodiment is obtained.

Also in the third embodiment, it is possible to execute another example of the substrate processing as in the first embodiment. FIG. 17 is a schematic diagram for explaining another example of substrate processing using the substrate processing apparatus 1 according to the third embodiment. In the substrate processing of the other example, the position of the opposing member 6Q shown in FIG. 16 described above is referred to as a first blocking space partition position. When the opposing member 6Q is located at the first blocking space section position, the upper end of the inner end surface 84 of the annular member 8Q is located at the same height as the upper surface of the substrate W.

As shown in FIG. 17, in the processing liquid supply step, the facing member elevating unit 61 (see FIG. 14) arranges the facing member 6Q at the second blocking space section position. The second blocking space section position is such that the upper end of the inner end surface 84 of the annular member 8Q is located above the upper surface of the substrate W, and the blocking space SS is partitioned by the substrate W, the facing member 6Q, and the annular member 8Q. It is the position of the opposing member 6Q when it is made.

With the facing member 6Q located at the position of the second blocking space section, a treatment liquid such as a chemical solution is supplied from the central nozzle 11 (see FIG. 14) toward the upper surface of the substrate. As a result, the treatment liquid is received by the inner end surface 84 of the annular member 8Q and the upper surface of the substrate W to form a liquid pool 101 of the treatment liquid (liquid pool formation step). Therefore, the upper surface of the substrate W is treated by the treatment liquid in the liquid pool 101. Therefore, if the amount of processing liquid required for forming the liquid pool 101 is supplied to the upper surface of the substrate W, the upper surface of the substrate W can be processed. Therefore, the consumption of the processing liquid can be reduced as compared with the configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being received by the inner end surface 84.

Then, after a predetermined time has elapsed from the formation of the liquid pool 101, the facing member elevating unit 61 moves the facing member 6Q to the first blocking space section position. That is, the upper end portion of the inner end surface 84 of the annular member 8Q is moved to the same position as the upper surface of the substrate W (see FIG. 16). As a result, the processing liquid existing on the upper surface of the substrate W is released from the liquid receiving by the inner end surface 84. Therefore, the treatment liquid moves outward in the radial direction due to the centrifugal force, and the liquid pool 101 is removed from the upper surface of the substrate W (liquid pool elimination step).

The treatment liquid that has moved to the outside of the peripheral edge of the substrate W due to centrifugal force smoothly flows into the treatment liquid discharge path 10 via the guide surface 85 (see FIG. 16). Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

<Fourth Embodiment>
FIG. 18 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit 2R provided in the substrate processing apparatus 1 according to the fourth embodiment of the present invention. In FIG. 18, a configuration equivalent to the configuration shown in FIGS. 1 to 17 described above is designated by the same reference numeral as in FIG. 1 and the like, and the description thereof will be omitted.

In the processing unit 2R according to the fourth embodiment, the form of substrate holding is different from the processing unit 2Q (see FIG. 14) according to the third embodiment. The processing unit 2R according to the fourth embodiment has a configuration in which the opposing member 6Q and the annular member 8Q according to the third embodiment and the spin chuck 5P according to the second embodiment are combined.

The substrate processing apparatus 1 according to the fourth embodiment can execute the same substrate processing (see FIGS. 6 to 7F) as the substrate processing apparatus 1 according to the first embodiment. The state when the treatment liquid is discharged from the cutoff space SS is the same as that described in the third embodiment (see FIG. 16).

In the substrate processing by the substrate processing apparatus 1 according to the fourth embodiment, the lower surface of the substrate W is protected by discharging the rinse liquid or the replacement liquid from the lower surface nozzle 14 (bottom surface protection step, protective liquid supply step). In this case, the lower surface nozzle 14 functions as a protective liquid supply unit.

Further, the atmosphere in the space between the lower surface of the substrate W and the spin base 21 may be replaced with the inert gas by blowing the inert gas toward the lower surface of the substrate W. In this case, the inflow of oxygen into the cutoff space SS can be further suppressed.

According to the fourth embodiment, the same effect as that of the first embodiment is obtained. Further, also in the fourth embodiment, it is possible to execute another example of the substrate processing shown in FIG. 17 as in the third embodiment.

<Fifth Embodiment>
FIG. 19 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus according to the fifth embodiment of the present invention. In FIG. 19, the same reference numerals as those in FIG. 1 and the like are added to the configurations equivalent to the configurations shown in FIGS. 1 to 18 described above, and the description thereof will be omitted.

The processing unit 2S according to the fifth embodiment is different from the processing unit 2R (see FIG. 18) according to the fourth embodiment in the mechanism of raising / lowering and rotating the opposing member 6Q and the annular member 8Q. The facing member 6Q and the annular member 8Q of the processing unit 2S according to the fifth embodiment are raised and lowered by the support member raising and lowering unit 131, and are rotated by the spin motor 23. The support member elevating unit 131 is a unit that elevates and elevates the support member 130 that suspends and supports the opposing member 6Q.

Hereinafter, the differences between the processing unit 2S according to the fifth embodiment and the processing unit 2R according to the fourth embodiment will be described in detail.

The facing member 6Q according to the fifth embodiment further includes a plurality of flange portions 63 extending horizontally from the upper end of the hollow shaft 60. The opposing member 6Q can be engaged with the spin base 21 by, for example, a magnetic force. Specifically, the plurality of first engaging portions 135 provided on the annular member 8Q and the plurality of second engaging portions 136 provided on the spin base 21 are attracted by a magnetic force to engage with each other in an uneven manner.

The plurality of first engaging portions 135 extend downward from the lower surface of the annular member 8Q. The plurality of first engaging portions 135 are arranged so as to be spaced apart from each other in the circumferential direction (rotation direction R) around the rotation axis A1. The plurality of second engaging portions 136 are arranged on the upper surface of the spin base 21 radially outward of the plurality of chuck pins 20 at intervals in the circumferential direction (rotation direction R) around the rotation axis A1. There is.

When each first engaging portion 135 of the annular member 8Q and the corresponding second engaging portion 136 of the spin base 21 are engaged, the opposing member 6Q and the annular member 8Q can rotate integrally with the spin base 21. Is. The spin motor 23 also functions as an opposing member rotating unit that rotates the opposing member 6Q and the annular member 8Q around the rotation axis A1. When the opposing member 6Q is located at the blocking space section position, the annular member 8Q engages the spin base 21 (see the alternate long and short dash line in FIG. 19).

The support member 130 includes an opposing member support portion 132 that supports the opposing member 6Q, a nozzle support portion 133 that is provided above the opposing member support portion 132 and supports the casing 30 of the central nozzle 11, and the opposing member support portion 132. It includes a wall portion 134 that connects the nozzle support portions 133 and extends in the vertical direction.

The facing member support portion 132 supports the facing member 6Q (flange portion 63) from below. A tubular portion insertion hole 132a through which the hollow shaft 60 is inserted is formed in the central portion of the facing member support portion 132.

Each flange portion 63 is formed with a positioning hole 63a that penetrates the flange portion 63 in the vertical direction. The facing member support portion 132 is formed with an engaging projection 132b that can be engaged with the positioning hole 63a of the corresponding flange portion 63. By engaging the corresponding engaging projection 132b with each positioning hole 63a, the opposing member 6Q and the annular member 8Q are positioned with respect to the support member 130 in the rotation direction R.

The support member elevating unit 131 includes, for example, a ball screw mechanism (not shown) that raises and lowers the support member 130, and an electric motor (not shown) that applies a driving force to the ball screw mechanism. The support member elevating unit 131 is controlled by the controller 3 (see the alternate long and short dash line in FIG. 5).

The support member elevating unit 131 may position the support member 130 at a predetermined height position from the upper position (the position shown by the solid line in FIG. 19) to the lower position (the position shown by the alternate long and short dash line in FIG. 19). it can. The lower position is the position where the support member 130 is closest to the upper surface of the spin base 21 in the movable range of the support member 130. The upper position is the position where the support member 130 is most distant from the upper surface of the spin base 21 in the movable range of the support member 130.

When the support member 130 is located in the upper position, the facing member 6Q is suspended and supported. The support member 130 passes through the engagement position between the upper position and the lower position by being raised and lowered by the support member elevating unit 131.

The support member 130 descends from the upper position to the engaging position together with the opposing member 6Q and the annular member 8Q. When the support member 130 reaches the engaging position, the opposing member 6Q and the annular member 8Q are delivered to the spin base 21. When the support member 130 reaches below the engaging position, it separates from the opposing member 6Q.

When the support member 130 rises from the lower position and reaches the engaging position, the support member 130 receives the opposing member 6Q and the annular member 8Q from the spin base 21. The support member 130 rises from the engaging position to the upper position together with the opposing member 6Q and the annular member 8Q.

In this way, the facing member 6Q and the annular member 8Q move up and down with respect to the spin base 21 by raising and lowering the support member 130 by the support member raising and lowering unit 131. Therefore, the support member elevating unit 131 functions as an opposing member elevating unit.

The substrate processing apparatus 1 according to the fifth embodiment can execute the same substrate processing as the substrate processing apparatus 1 according to the fourth embodiment. However, in the substrate processing according to the fifth embodiment, the atmosphere replacement step (step S3) to the spin drying step (step S8) are performed in a state where the support member 130 is located at the lower position (the position indicated by the alternate long and short dash line in FIG. 19). Is executed. Therefore, when the processing liquid is supplied to the upper surface and the lower surface of the substrate W, the opposing member 6Q and the annular member 8Q and the substrate W can be reliably rotated synchronously.

According to the configuration according to the fifth embodiment, the same effect as that of the first embodiment is obtained.

<Other Embodiments>
The present invention is not limited to the embodiments described above, and can be implemented in other embodiments.

For example, unlike each of the above-described embodiments, it can be applied to a substrate treatment using a polymer layer forming liquid for forming a polymer layer on the upper surface of the substrate W as a treatment liquid. Examples of the polymer layer forming liquid include a hydrophobizing agent that makes the surface of the substrate W hydrophobic. It is a liquid that reacts with the SiO ₂ film on the surface of the pattern formed on the surface of the substrate W to form a sacrificial layer.

As the hydrophobizing agent, for example, a silicon-based hydrophobizing agent for hydrophobizing silicon itself and a compound containing silicon, or a metal-based hydrophobizing agent for hydrophobizing the metal itself and a compound containing metal can be used.

The metal-based hydrophobizing agent contains, for example, an amine having a hydrophobic group and at least one of an organic silicon compound. The silicon-based hydrophobizing agent is, for example, a silane coupling agent. The silane coupling agent contains, for example, HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and at least one of non-chlorohydrophobic agents. Non-chloro hydrophobic agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis (dimethylamino) dimethylsilane, N, N-dimethylaminotrimethylsilane, N-( Trimethylsilyl) Includes at least one of dimethylamine and an organosilane compound.

The polymer layer forming liquid is relatively expensive, so we want to reduce the consumption. As in the above-described embodiment, a method of forming a liquid pool 101 of the polymer layer forming liquid on the upper surface of the substrate W to treat the upper surface of the substrate W is effective.

Further, in the first embodiment and the second embodiment, the connecting portion 81 has an inclined lower surface 81a that inclines downward as it goes outward in the radial direction. However, the connecting portion 81 does not have an inclined lower surface 81a that inclines downward as it goes outward in the radial direction, and is flush with the facing surface 6a as shown by the alternate long and short dash line in FIG. It may have a certain lower surface. In this case, the treatment liquid on the guide surface 85 collides with the radial inner end surface 80b of the wide portion 80 of the extending portion 66 of the facing member 6 before flowing into the treatment liquid discharge path 10, thereby guiding the treatment liquid. Backflow occurs in the treatment liquid on the surface 85.

Further, the connecting member 9 in the above-described embodiment is a columnar shape extending in the vertical direction. Unlike the above-described embodiment, as shown in FIG. 20, each connecting member 9 is formed so as to be directed toward the downstream side RD of the rotation direction R of the substrate W as it is directed outward in the radial direction in a plan view. You may be.

When the substrate W is rotating, an air flow F (see FIG. 9) toward the downstream side RD of the rotation direction R is likely to be generated in the cutoff space SS as it goes outward in the radial direction. If the connecting member 9 is formed so as to be directed toward the downstream side RD of the rotation direction R of the substrate W as it goes outward in the radial direction in a plan view, the rotation direction R becomes larger as it goes outward in the radial direction. It is possible to promote the generation of an air flow toward the downstream RD. Therefore, the turbulence of the air flow can be further suppressed.

Further, in the above-described embodiment, the connecting member 9 is provided in the treatment liquid discharge path 10, but the connecting member 9 may be provided in the blocking space SS. In this case, although not shown, It is connected to the guide surface 85 and the inclined lower surface 81a.

Although the embodiments of the present invention have been described in detail, these are only specific examples used for clarifying the technical contents of the present invention, and the present invention is construed as being limited to these specific examples. Should not, the scope of the invention is limited only by the appended claims.

This application corresponds to Japanese Patent Application No. 2019-133864 filed with the Japan Patent Office on July 19, 2019, and the entire disclosure of this application shall be incorporated herein by reference.

1: Substrate processing device 3: Controller 5: Spin chuck (board holding unit)
5P: Spin chuck (board holding unit)
6: Facing member 6Q: Facing member 6a: Facing surface 8: Ring member 8Q: Ring member 9: Connecting member 10: Treatment liquid discharge path 10Q: Treatment liquid discharge path 10a: Inflow port 10Qa: Inflow port 10b: Discharge port 11: Central nozzle (treatment liquid supply unit, inert gas supply unit)
12: First lower surface nozzle (protective liquid supply unit)
13: Second lower surface nozzle (protective liquid supply unit)
14: Bottom nozzle (protective liquid supply unit)
23: Spin motor (board rotation unit, facing member rotation unit)
61: Opposing member elevating unit 62: Opposing member rotating unit 65: Disk 66: Extension 66Q: Extension 71A: First guard 71B: Second guard 74: Guard elevating unit 75A: First cylindrical portion 75B: Second cylindrical part 76A: First ring part 76B: Second ring part 84: Inner end surface 85: Guide surface 86: Discharge channel screen 101: Liquid pool D1: Blocking space width (width of blocking space in the vertical direction) )
D3: Width of discharge path (width of treatment liquid discharge path)
SS: Blocking space W: Substrate

Claims

A board holding unit that holds the board horizontally,
A substrate rotation unit that rotates the substrate holding unit around a vertical axis passing through the center of the substrate held by the substrate holding unit.
A processing liquid supply unit that supplies the processing liquid toward the upper surface of the substrate held by the substrate holding unit, and
An inert gas supply unit that supplies an inert gas toward the upper surface of the substrate held by the substrate holding unit,
Opposing a disk portion having a facing surface facing the substrate held by the substrate holding unit from above and an extending portion extending outward from the disk portion in the radial direction about the vertical axis. Members and
An annular member that surrounds the substrate held by the substrate holding unit in a plan view,
An opposing member that raises and lowers the opposing member together with the annular member so that a blocking space in which the inflow of atmosphere from the outside is restricted by the substrate held by the substrate holding unit, the opposing member, and the annular member is partitioned. Including elevating unit
When the annular member rotates the substrate held by the substrate holding unit, the processing liquid existing on the upper surface of the substrate is centrifugally removed from the peripheral portion of the substrate in the radial direction. It has a guide surface to guide people toward
A substrate processing apparatus in which a processing liquid discharge path for discharging the treatment liquid existing on the guide surface to the outside of the blocking space is partitioned by the extension portion and the annular member.
The substrate processing apparatus according to claim 1, wherein the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction.
The annular member is connected to the outer end of the guide surface in the radial direction, and has a discharge path section screen for partitioning the treatment liquid discharge path.
The substrate processing apparatus according to claim 1 or 2, wherein the processing liquid discharge path has an inflow port at a boundary between the guide surface and the discharge path section screen.
The substrate processing apparatus according to claim 3, wherein the discharge channel screen and the guide surface form a single flat surface that is flat in the horizontal direction.
The substrate according to any one of claims 1 to 4, further comprising an opposing member rotating unit that rotates the opposing member together with the annular member around the vertical axis in synchronization with the substrate held by the substrate holding unit. Processing equipment.
A plurality of connecting members for connecting the annular member and the facing member are further included.
The fifth aspect of the present invention, wherein each of the connecting members is formed so as to be directed outward in the radial direction and toward the downstream side in the rotational direction of the substrate held by the substrate holding unit in a plan view. Board processing equipment.
Further including a controller for controlling the substrate rotation unit, the processing liquid supply unit, the inert gas supply unit, and the facing member elevating unit.
The controller moves the facing member and the annular member by the facing member elevating unit to partition the blocking space, and an inert gas from the inert gas supply unit toward the upper surface of the substrate. The atmosphere replacement step of replacing the atmosphere in the blocking space with an inert gas by supplying the above-mentioned processing liquid supply unit and the upper surface of the substrate from the processing liquid supply unit in a state where the atmosphere in the blocking space is replaced with the inert gas. By rotating the substrate to the substrate rotating unit in the processing liquid supply step of supplying the treatment liquid to the above-mentioned blocking space, the treatment liquid on the upper surface of the substrate is passed through the guide surface and the treatment liquid discharge path. The substrate processing apparatus according to any one of claims 1 to 6, which is programmed to perform a processing liquid discharging step of discharging to the outside.
The guide surface has an inclined surface that is inclined upward so as to be outward in the radial direction.
In the treatment liquid supply step, the controller supplies the treatment liquid to the upper surface of the substrate held by the substrate holding unit, and thus receives the treatment liquid by the inclined surface and the upper surface of the substrate to receive the treatment liquid liquid. The liquid pool forming step of forming a pool and the liquid pool removing step of accelerating the rotation of the substrate by the substrate rotating unit to remove the liquid pool from the upper surface of the substrate are executed in the processing liquid discharge step. The substrate processing apparatus according to claim 7, which is programmed in.
A substrate holding process that holds a circular substrate horizontally in a plan view,
A flat surface with a disk portion having a facing surface facing the substrate from above and an opposing member having an extending portion extending from the disk portion in the radial direction centered on a vertical axis passing through the central portion of the substrate. A space partitioning step of visually moving the annular member surrounding the substrate in the vertical direction to partition the facing member, the annular member, and the blocking space in which the inflow of the atmosphere from the outside is restricted by the substrate.
An atmosphere replacement step of replacing the atmosphere in the blocking space with the inert gas by supplying the inert gas toward the blocking space.
A treatment liquid supply step of supplying the treatment liquid to the upper surface of the substrate in a state where the atmosphere in the blocking space is replaced by the inert gas.
By rotating the substrate in the rotation direction around the vertical axis in a state where the treatment liquid is present on the upper surface of the substrate, the treatment liquid existing on the peripheral edge of the upper surface of the substrate is guided to the annular member. The process includes a treatment liquid discharge step of guiding the treatment liquid to a treatment liquid discharge passage partitioned by the extension portion and the annular member via a surface, and discharging the treatment liquid from the treatment liquid discharge passage to the outside of the blocking space. Substrate processing method.
The substrate processing method according to claim 9, wherein the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction.
The annular member is connected to the outer end of the guide surface in the radial direction, and has a discharge path section screen for partitioning the treatment liquid discharge path.
The substrate processing method according to claim 9 or 10, wherein the processing liquid discharge path has an inflow port at a boundary between the guide surface and the discharge path section screen.
The substrate processing method according to claim 11, wherein the discharge path section screen and the guide surface form a single flat surface that is flat in the horizontal direction.
The substrate processing method according to any one of claims 9 to 12, further comprising a synchronous rotation step of synchronously rotating the substrate around the vertical axis in the processing liquid discharge step.
The annular member and the opposing member are connected by a connecting member.
The substrate processing method according to claim 13, wherein the connecting member is formed so as to be directed toward the downstream side in the rotational direction of the substrate as it is directed outward in the radial direction in a plan view.
The guide surface has an inclined surface that is inclined upward so as to be outward in the radial direction.
The treatment liquid supply step includes a liquid pool forming step of supplying the treatment liquid to the upper surface of the substrate to receive the treatment liquid by the inclined surface and the upper surface of the substrate to form a liquid pool of the treatment liquid.
The substrate processing method according to any one of claims 9 to 14, wherein the treatment liquid discharging step includes a liquid pool removing step of accelerating the rotation of the substrate and removing the liquid pool from the upper surface of the substrate.
The inner end face of the annular member in the radial direction extends in the vertical direction,
The upper end of the inner end surface is connected to the guide surface.
In the treatment liquid supply step, the treatment liquid is moved toward the upper surface of the substrate in a state where the annular member is moved so that the upper end portion of the inner end surface of the annular member is located above the upper surface of the substrate. Includes a liquid pool forming step of receiving the treatment liquid by the inner end surface of the annular member and the upper surface of the substrate to form a liquid pool of the treatment liquid.
In the processing liquid discharge step, the liquid pool is collected from the upper surface of the substrate by moving the annular member so that the upper end portion of the inner end surface of the annular member is located at the same height as the upper surface of the substrate. The substrate processing method according to any one of claims 9 to 15, further comprising a liquid pool removing step of eliminating the above-mentioned substances.
A first guard having a first cylindrical portion surrounding the facing member and the annular member in a plan view and a first annular portion extending inward in the radial direction from the first cylindrical portion, and the facing surface in a plan view. A second cylindrical portion surrounding the member and the annular member, and a second guard having a second annular portion extending inward in the radial direction from the second cylindrical portion and facing the first annular portion from below. Further includes a guard movement process that moves the cylinder up and down individually.
The treatment liquid discharge path has a discharge port for discharging the treatment liquid outward in the radial direction.
In the guard moving step, when the treatment liquid is discharged from the discharge port, in the vertical direction, the inner end of the first annular portion in the radial direction and the inside of the second annular portion in the radial direction. The substrate processing method according to any one of claims 9 to 16, further comprising a step of moving the first guard and the second guard so that the processing liquid discharge path is located between the first guard and the second guard.
Further including a protective liquid supply step which is executed in parallel with the treatment liquid discharge step and supplies a protective liquid for protecting the lower surface of the substrate toward the lower surface of the substrate.
In the guard moving step, the second guard is moved so that the radial inner end of the second ring portion is located below the discharge port and above the lower end of the annular member. The substrate processing method according to claim 17, which comprises a step of causing the substrate to be processed.
A pre-rinsing step of supplying a rinsing liquid to the upper surface of the substrate is further included before the treatment liquid supply step.
The rinse liquid supplied to the upper surface of the substrate in the pre-rinsing step closes the gap between the annular member and the substrate, and is discharged from the treatment liquid discharge path.
The substrate processing method according to any one of claims 9 to 18, wherein the prerinsing step is executed in parallel with the atmosphere replacement step.