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WO2020177119A1 - Grounding strap design - Google Patents

Grounding strap design Download PDF

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Publication number
WO2020177119A1
WO2020177119A1 PCT/CN2019/077318 CN2019077318W WO2020177119A1 WO 2020177119 A1 WO2020177119 A1 WO 2020177119A1 CN 2019077318 W CN2019077318 W CN 2019077318W WO 2020177119 A1 WO2020177119 A1 WO 2020177119A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
coupled
connector
support
ground
Prior art date
Application number
PCT/CN2019/077318
Other languages
English (en)
French (fr)
Inventor
Zeren SHANG
Zheng Yang
Junpeng HUANG
Yang Zhao
Xiao Ming Su
Shih Yao SUN
Yi Cui
Suhail Anwar
Dong Shan YU
Fupo HAO
Yu Yue
Original Assignee
Applied Materials, Inc.
Xiao Ming Su
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc., Xiao Ming Su filed Critical Applied Materials, Inc.
Priority to PCT/CN2019/077318 priority Critical patent/WO2020177119A1/en
Priority to CN201980093753.2A priority patent/CN113966543B/zh
Priority to TW109103154A priority patent/TWI724773B/zh
Publication of WO2020177119A1 publication Critical patent/WO2020177119A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means

Definitions

  • Embodiments of the present disclosure generally relate to methods and apparatus for processing substrates, such as semiconductor substrates, using plasma. More particularly, embodiments of the present disclosure relate to radio frequency (RF) ground straps for a plasma processing chamber.
  • RF radio frequency
  • PECVD Plasma enhanced chemical vapor deposition
  • substrates such as semiconductor substrates, solar panel substrates, and flat panel display substrates.
  • PECVD is generally carried out by introducing one or more precursor gases into a vacuum chamber having a substrate disposed therein on a substrate support.
  • the precursor gases are directed towards a process volume through a gas distribution plate, typically situated near the top of the vacuum chamber.
  • the precursor gases are energized (e.g. excited) into a plasma by radio frequency (RF) power applied to the gas distribution plate by one or more RF power sources.
  • RF radio frequency
  • the substrate support is RF grounded in order to eliminate any voltage drop across the substrate support, which would affect deposition uniformity of the material film layer across the surface of the substrate. Additionally, if the substrate support is not properly RF grounded, RF arcing between the substrate support and the chamber body may occur due to the high electric potential difference between the substrate support and the chamber body. This results in particle contamination and yield loss, as well as the formation of parasitic plasma.
  • the substrate support is typically grounded to the chamber body by thin and flexible ground straps to form an RF current return path.
  • conventional ground strap arrangements provide RF return paths with considerable electrical resistance (e.g. impedance) .
  • electrical resistance e.g. impedance
  • a substrate processing chamber includes a chamber body having one or more chamber walls partially defining a process volume.
  • the chamber body also includes chamber bottom having a first chamber connector and a second chamber connector.
  • a substrate support is disposed in the process volume and has a first support connector coupled thereto.
  • the substrate processing chamber further includes a first ground strap and a second ground strap, each having a first end and a second end. The first end of the first ground strap is coupled to the first support connector and the second end is coupled to the first chamber connector. The first end of the second ground strap is coupled to the first support connector and the second end is coupled to a second chamber connector.
  • a substrate processing chamber includes a chamber body having one or more chamber walls and a chamber bottom having a plurality of chamber connectors.
  • the substrate processing chamber further includes a substrate support having a plurality of support connectors coupled thereto that are each horizontally aligned with a corresponding chamber connector.
  • a first plurality of ground straps is coupled to the substrate support and to the chamber bottom by corresponding pairs of support connectors and chamber connectors.
  • a second plurality of ground straps is coupled to the substrate support and to the chamber bottom by noncorresponding pairs of support connectors and chamber connectors.
  • a substrate processing chamber includes a chamber body having one or more chamber walls partially defining a process volume.
  • the chamber body also includes chamber bottom having a plurality of chamber connectors.
  • Each chamber connector includes a parallel clamp assembly.
  • a substrate support is disposed in the process volume and has plurality of support connectors.
  • Each support connector includes an L-block and clamp assembly and is substantially aligned with a corresponding chamber connector along a horizontal plane.
  • the substrate processing chamber further includes a first plurality of ground straps and a second plurality of ground straps, each ground strap having a first end and a second end.
  • the first ends of the ground straps are coupled to the support connectors and the second ends are coupled to the chamber connectors.
  • the first ends and the second ends of the first plurality of ground straps are substantially aligned along the horizontal plane.
  • the first ends and the second ends of the second plurality of ground straps are offset along the horizontal plane.
  • Figure 1 illustrates a cross-sectional view of a substrate processing system having one or more ground straps coupled to a substrate support therein, according to one embodiment of the disclosure.
  • Figure 2 illustrates a top view of an exemplary ground strap according to one embodiment of the disclosure.
  • Figure 3 illustrates a cross-sectional view of a portion of the substrate processing chamber of Figure 1.
  • Figure 4A illustrates a bottom view of the substrate support of Figure 1.
  • Figure 4B illustrates a top view of the chamber bottom of Figure 1.
  • Figure 4C illustrates another top view of the chamber bottom as depicted in Figure 1.
  • a substrate processing chamber includes a first ground strap and a second ground strap coupled to a substrate support and a chamber bottom.
  • a top end of the first ground strap is coupled to a support connector and is horizontally aligned with a bottom end of the first ground strap coupled to a first chamber connector.
  • a top end of the second ground strap is coupled to the support connector while a bottom end is coupled to a second chamber connector horizontally offset from the support connector, thus forming a cross double lattice pattern with the first ground strap.
  • FIG. 1 is a cross-sectional view of a substrate processing system 100, such as a PECVD apparatus.
  • the substrate processing system 100 is configured to process a large area substrate 114 using plasma during the fabrication of liquid crystal displays (LCD’s) , flat panel displays, organic light emitting diodes (OLED’s) or photovoltaic cells for solar cell arrays.
  • the structures may include p-n junctions to form diodes for photovoltaic cells, metal oxide semiconductor field-effect transistors (MOSFETs) , and thin film transistors (TFTs) .
  • MOSFETs metal oxide semiconductor field-effect transistors
  • TFTs thin film transistors
  • the substrate processing system 100 is configured to deposit a variety of materials on the large area substrate 114, including but not limited to dielectric materials, semiconductive materials, and insulating materials.
  • dielectric and semiconductive materials may include polycrystalline silicon, epitaxial silicon, amorphous silicon, microcrystalline silicon, silicon germanium, silicon dioxide, silicon oxynitride, silicon nitride, and combinations thereof or derivatives thereof.
  • the plasma processing system 100 is further configured to receive gases therein, including but not limited to precursor gases, purge gases, and carrier gases.
  • the plasma processing system may receive gas species such as hydrogen, oxygen, nitrogen, argon, helium, silane, and combinations thereof or derivatives thereof.
  • the substrate processing system 100 includes a substrate processing chamber 102 coupled to a gas source 104.
  • the substrate processing chamber 102 comprises chamber walls 106 and a chamber bottom 108 (collectively, a chamber body 101) that partially define a process volume 110.
  • the process volume 110 is generally accessed through a slit valve 112 in the chamber walls 106 that facilitates ingress and egress of the substrate 114 to and from the process volume 110.
  • the chamber walls 106 and chamber bottom 108 are generally fabricated from a unitary block of aluminum, aluminum alloy, or other suitable material for substrate processing.
  • the chamber walls 106 and chamber bottom 108 are coated with a protective barrier material to reduce effects of corrosion.
  • the chamber walls 106 and chamber bottom 108 may be coated with a ceramic material, a metal oxide material, or rare earth-containing material.
  • the chamber walls 106 support a lid assembly 116.
  • a gas distribution plate 126 is suspended in the substrate processing chamber 102 from a backing plate 128 that is coupled to the lid assembly 116.
  • a gas volume 140 is formed between the gas distribution plate 126 and the backing plate 128.
  • the gas source 104 is connected to the gas volume 140 via a gas supply conduit 142.
  • the gas supply conduit 142, backing plate 128, and gas distribution plate 126 are generally formed from an electrically conductive material and are in electrical communication with one another.
  • the gas distribution plate 126 and backing plate 128 are manufactured from a unitary block of material.
  • the gas distribution plate 126 is generally perforated such that process gases are uniformly distributed into the substrate processing volume 110.
  • a substrate support 118 is disposed within the substrate processing chamber 102 opposing the gas distribution plate 126 in a generally parallel manner.
  • the substrate support 118 supports the substrate 114 during processing.
  • the substrate support 118 is fabricated from conductive materials, such as aluminum, and encapsulates at least one temperature control device, which controllably heats or cools the substrate support 118 to maintain the substrate 114 at a predetermined temperature during processing.
  • the substrate support 118 has a first surface 120 and a second surface 122.
  • the first surface 120 is opposite the second surface 122.
  • a third surface 121 which is perpendicular to the first surface 120 and the second surface 122, couples the first surface 120 and the second surface 122.
  • the first surface 120 supports the substrate 114.
  • the second surface 122 has a stem 124 coupled thereto.
  • the stem 124 couples the substrate support 118 to an actuator (not shown) that moves the substrate support 118 between an elevated processing position (as shown) and a lowered position that facilitates substrate transfer into and out of the substrate processing chamber 102.
  • the stem 124 also provides a conduit for electrical and thermocouple leads between the substrate support 118 and other components of the substrate processing system 100.
  • An RF power source 142 is generally used to generate a plasma between the gas distribution plate 126 and the substrate support 118.
  • the RF power source 142 is coupled to the gas distribution plate 126 via an impedance matching circuit 144 at a first output 146.
  • a second output 148 of the impedance matching circuit 144 is further electrically coupled to the chamber body 101.
  • ground straps 130 and one or more ground straps 131 are electrically connected to the substrate support 118 at a top end 152 of each ground strap 130, 131 and to the chamber bottom 108 at a bottom end 154 of each ground strap 130, 131.
  • the ground straps 130, 131 are electrically connected to the second surface 122 of the substrate support 118 at the top end 152.
  • the substrate processing chamber 102 may include any suitable number of each ground straps 130, 131 for grounding the substrate support 118 to the chamber bottom 108 to form an RF current return path between the substrate support 118 and the chamber bottom 108. For example, one strap, two straps, three straps, four straps, five straps, or more may be used.
  • the ground straps 130, 131 are configured to shorten the path for RF current during processing and minimize arcing near the periphery of the substrate support 118.
  • the substrate support 118 includes one or more support connectors 132 coupled thereto. In some embodiments, the one or more support connectors are coupled to the second surface 122 of the substrate support 118. A first, second, third, fourth, and fifth support connector, 132a-132e, respectively, are shown in Figure 1. Other quantities of support connectors, however, are also contemplated.
  • the chamber bottom 108 includes one or more chamber connectors 134. A first, second, third, fourth, fifth, and sixth chamber connector, 134a-134f, respectively, are shown. Other quantities of chamber connectors, however, are also contemplated.
  • each support connector 132 is paired with a corresponding chamber connector 134.
  • the first support connector 132a is paired with the first chamber connector 134a
  • the second support connector 132b is paired with the second chamber connector 134b
  • each support connector 132 is substantially aligned with the corresponding chamber connector 134 along a horizontal plane (x) .
  • the first support connector 132a and the first chamber connector 134a are horizontally offset from each other.
  • the support connectors 132 and the chamber connectors 134 may include any suitable attachment structure, including but not limited to clamps, screws, pins, clasps, toggles, or the like.
  • the last chamber connector 134f is disposed at a terminal position of the one or more chamber connectors 134, such as a location adjacent to a point below a corner of the substrate support 118.
  • the chamber connector 134f does not have a corresponding support connector 132, and thus provides a terminal connection for the ground strap 131e.
  • the chamber connector 134f may be a clamp having a screw disposed through a set hole (not shown) in the chamber bottom 108.
  • Other embodiments, such as a pin, clasp, toggle, or the like, are also contemplated.
  • each of the ground straps 130 is coupled to the substrate support 118 via a support connector 132 at the top end 152 and to the chamber bottom 108 via a corresponding chamber connector 134 at the bottom end 154.
  • the top end 152a of the first ground strap 130a is coupled to the first support connector 132a and the bottom end 154a of the first ground strap 130a is coupled to the first chamber connector 134a;
  • the top end 152b of the second ground strap 130b is coupled to the second support connector 132b and the bottom end of 154b of the second ground strap 130b is coupled to the second chamber connector 134b, and so on until reaching the chamber connector 134f.
  • the chamber connector 134f remains uncoupled to any of the ground straps 130.
  • the top end 152 and the bottom end 154 of each ground strap 130 are substantially horizontally aligned.
  • Each of the ground straps 131 (five are shown as 131a-131e) is also coupled to the substrate support 118 via a support connector 132 at the top end 152. However, unlike the ground straps 130, the ground straps 131 do not couple to a chamber connector 134 corresponding to the support connector 132 at which each ground strap 131 is coupled to the substrate support 118. Rather, the ground straps 131 cross over and couple to a noncorresponding and subsequent chamber connector 134, such that the bottom end 154 of each ground strap 131 is horizontally offset or unaligned with the top end 152.
  • ground straps 131 forms a cross double lattice pattern with the ground straps 130, wherein each of a pair of ground straps 130, 131 coupled to the substrate support 118 at a single support connector 132 are coupled to the chamber bottom 108 at separate chamber connectors 134, and vice versa.
  • the ground strap 131a couples to the support connector 132a at the top end 152a and couples to the chamber connector 134b at the bottom end 154b
  • the ground strap 132b couples to the support connector 132b at the top end 152b and couples to the chamber connector 134c at the bottom end 154c, and so on.
  • the top end 152 and the bottom end 154 of each ground strap 131 are more horizontally offset along the (x) axis than the top end 152 and the bottom end 154 of each ground strap 130.
  • first and bottom ends 152, 154 of the ground straps 131 being offset by one chamber connector position
  • bottom ends 154 of ground straps 131 are horizontally offset by any suitable distance along the (x) axis, for example, by two or more chamber connector positions, or less than one chamber connector position.
  • FIG 2 is a top view of an exemplary ground strap 130, 131.
  • the body 232 of ground strap 130, 131 is generally a rectangular piece of thin, flexible aluminum material having a top end 152 and a bottom end 154, with a slit 234 centrally located along the body 232 between the top end 152 and the bottom end 154.
  • the ground strap 130, 131 is further manufactured with one or more folds (not shown) located between the top end 152 and the bottom end 154.
  • the one or more folds may form during processing when the substrate support 118 is raised and lowered between a home position and a processing position, thus bending the ground straps 130, 131 and forming the one or more folds.
  • Figure 2 illustrates one example of a ground strap 130, 131 suitable for the processing system described herein.
  • the ground strap 130, 131 is generally any suitable size, shape, and material conducive to substrate processing.
  • Figure 3 is a cross-sectional view of a portion 300 of the substrate processing chamber 102 of Figure 1.
  • the substrate processing chamber 102 further includes a first clamp assembly 360, which may include an L-block clamp, and a second clamp assembly 370.
  • the first clamp assembly 360 and the second clamp assembly 370 are generally formed of aluminum material.
  • the first clamp assembly 360 and the second clamp assembly 370 are disposed opposite one another in a substantially parallel orientation.
  • the one or more ground straps 130, 131 (two of each are shown) are coupled to the substrate support 118 through the first clamp assembly 360, and are coupled to the chamber bottom 108 through the second clamp assembly 370.
  • the one or more ground straps 130, 131 are coupled to the chamber bottom 108 through a first clamp assembly 360 disposed on the chamber bottom 108.
  • any suitable combination of coupling or clamping mechanisms may be used.
  • the first clamp assembly 360 includes an L-block 362 and a clamp 364.
  • the L-block 362 is coupled to the substrate support 118 via a first coupling mechanism 366.
  • the first coupling mechanism 366 is a screw or bolt; however, the first coupling mechanism 366 is generally any suitable coupling mechanism.
  • the clamp 364 is coupled to the L-block 362 via a second coupling mechanism 368.
  • the second coupling mechanism 368 is a screw or bolt; however, the second coupling mechanism 368 is generally any suitable coupling mechanism.
  • the clamp 364 and the L-block 362 are coupled to the substrate support 118 via a single coupling mechanism, for example, a single screw or single bolt.
  • the L-block 362 and the clamp 364 are configured to hold the top ends 152 of the ground straps 130, 131 therebetween.
  • the top ends 152 of the ground straps 130, 131 are coupled to the L-block and clamp assembly 360 through the second coupling mechanism 368.
  • the clamp 364 further has a curved portion 365 defined by a radial curve to accommodate for folding of the ground straps 130, 131 when the substrate support 118 is raised and lowered between a home position and a processing position.
  • the parallel clamp assembly generally includes a planar plate 372 and coupling mechanism 374.
  • the plate 372 may be any suitable shape for coupling the ground straps 130, 131 to the chamber bottom 108, such as rectangular or circular.
  • the plate 372 is coupled to the chamber bottom 108 via the coupling mechanism 374.
  • the coupling mechanism 374 is a screw; however, the coupling mechanism 374 is generally any suitable coupling mechanism.
  • Figure 4A is a bottom view of the substrate support 118 having one or more support connectors 132 coupled thereto.
  • the substrate support 118 includes five support connectors 132a-132e coupled to the second surface 122 along each edge of the substrate support 118 in a linear fashion.
  • the number of support connectors 132 utilized for processing depends on the number of ground straps 130, 131 desired.
  • Each support connector 132 couples a single ground strap 130 and a single ground strap 131 to the substrate support 118 at the top end 152. For example, if three ground straps 131 and three ground straps 132 were utilized along each edge of substrate support 118, then twelve support connectors 132 would be utilized (three along each edge) .
  • support connector 132a would couple to ground straps 130a and 131a
  • support connector 132b would couple to ground straps 130b and 131b
  • support connector 132c would couple to ground straps 130c and 131c, and so on.
  • Figure 4B is a top view of the chamber bottom 108 in Figure 1.
  • Figure 4B illustrates the position of the substrate support 118 in phantom in relation to the chamber walls 106.
  • the chamber bottom 108 includes five chamber connectors 134a-134e linearly disposed beneath each edge of the substrate support 118, each of the chamber connectors 134 corresponding with a single support connector 132 illustrated in Figure 4A.
  • a sixth chamber connector 134e is disposed at a terminal position of each row of chamber connectors 134 when viewing each edge of substrate support 118 in a clockwise direction.
  • Each terminal chamber connector 134e is coupled to the chamber bottom at a location adjacent to a point below a corner of the substrate support 118.
  • the number of chamber connectors 134 utilized for processing depends on the number of ground straps 131 desired.
  • Each chamber connector 134 couples a single ground strap 131 to the chamber bottom 108 at the bottom end 154.
  • the ground strap 131 coupled to each chamber connector 134 is also coupled to the preceding support connector 132 at the top end 152, such that the top end and bottom ends 152, 154 of each ground strap 131 are horizontally offset.
  • the chamber connector 134b is coupled to ground strap 131a
  • the chamber connector 134c is coupled to ground strap 131b, and so on.
  • each of the chamber connectors 134a-134e is coupled to a single ground strap 130.
  • the chamber connector 134a is coupled to the first ground strap 130a
  • the chamber connector 134b is coupled to ground strap 130b
  • the chamber connector 134c is coupled to ground strap 130c
  • the terminal chamber connector 134f is not coupled to a ground strap 130.
  • Figure 4C is another top view of the chamber bottom 108 in Figure 1 depicting the first surface 120 of the substrate support 118.
  • the substrate support 118 is disposed above the chamber connectors 134a-134e, thus obstructing them from view.
  • the terminal chamber connector 134f for each line of chamber connectors 134 is disposed just outside of the perimeter of substrate support 118 and is thus visible.
  • a ground strap 131e is coupled to each terminal chamber connector 134f.
  • ground straps 130, 131 may be coupled to one, two, or three sides of the substrate support 118.
  • one or more of each ground strap 130, 131 are installed on one side of the substrate support 118 and the chamber bottom 108, such as a side nearest the chamber wall 106 having the slit valve 112.
  • one or more of each ground strap 130, 131 are installed on two opposing sides of the substrate support 118 and the chamber bottom 108.
  • the ground straps 130, 131 are installed at one or more corners of the substrate support 118.
  • one or more of each ground strap 130, 131 are installed at one corner of the substrate support 118.
  • the substrate support provides a return path for RF power supplied to the gas distribution plate and the substrate support itself, creating an electrical potential difference between the substrate support and surrounding inner surfaces of the chamber body.
  • This potential difference inadvertently causes electrical arcing between the substrate support and surrounding surfaces, such as the chamber walls.
  • the magnitude of the potential difference, and thus the amount of arcing between the substrate support and chamber walls, is partially dependent on the resistance and size of the substrate support. Arcing is deleterious and results in particle contamination, film deposition variance, substrate damage, chamber component damage, yield loss, and system downtime.
  • ground straps coupled to the substrate support and chamber body provides an alternate RF return path for the RF power supplied to either the substrate support or gas distribution plate, thus reducing the probability of electrical arcing between the substrate support and chamber body.
  • conventional configurations of ground straps still provide significant electrical resistance and impedance along the alternate RF return path they were meant to create, forming a sufficient electrical potential difference between the substrate support and chamber body to cause arcing therebetween.
  • grounding efficiency of the ground straps may be increased by up to or more than 100%. This increased grounding efficiency reduces the electrical potential difference between the substrate support and the chamber body, which in turn eliminates or diminishes arcing therebetween and reduces its deleterious effects.
  • parasitic plasma generation is reduced.
  • the generated plasma generally leaks to other parts of the chamber, becoming parasitic plasma that forms undesired films on various chamber components, such as the chamber walls, the chamber bottom, the substrate support, and the plurality of ground straps.
  • the formation of parasitic plasma typically occurs between the outer edge of the substrate support or gas distribution plate and the surrounding chamber walls, or beneath the substrate support.
  • Parasitic plasma is harmful because such plasma negatively influences the plasma uniformity of thin films deposited on the substrate and may accelerate corrosion of chamber components such as the ground straps themselves. Reducing or eliminating the formation of parasitic plasma during processing thus extends the lifetime of the ground straps 130 as well as other chamber components.
  • the improved RF grounding efficiency of the processing chamber results in increased real load power efficiency.
  • the amount of power utilized to perform PECVD is reduced while comparable film quality is maintained.
  • overall energy consumption of the processing system may be reduced by up to or more than 25%, such as about 15%, without sacrificing film quality.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
PCT/CN2019/077318 2019-03-07 2019-03-07 Grounding strap design WO2020177119A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/CN2019/077318 WO2020177119A1 (en) 2019-03-07 2019-03-07 Grounding strap design
CN201980093753.2A CN113966543B (zh) 2019-03-07 2019-03-07 接地带设计
TW109103154A TWI724773B (zh) 2019-03-07 2020-02-03 基板處理腔室

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/077318 WO2020177119A1 (en) 2019-03-07 2019-03-07 Grounding strap design

Publications (1)

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WO2020177119A1 true WO2020177119A1 (en) 2020-09-10

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TW (1) TWI724773B (zh)
WO (1) WO2020177119A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070096185A (ko) * 2006-03-21 2007-10-02 주성엔지니어링(주) 기판처리장치의 접지선 연결방법 및 접지선 연결장치
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
CN102074445A (zh) * 2009-11-23 2011-05-25 周星工程股份有限公司 用于处理基板的装置
CN103165369A (zh) * 2011-12-19 2013-06-19 北京北方微电子基地设备工艺研究中心有限责任公司 下电极机构和具有其的等离子体处理设备
US20180340258A1 (en) * 2017-05-29 2018-11-29 Samsung Display Co., Ltd. Chemical vapor deposition system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070096185A (ko) * 2006-03-21 2007-10-02 주성엔지니어링(주) 기판처리장치의 접지선 연결방법 및 접지선 연결장치
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
CN102074445A (zh) * 2009-11-23 2011-05-25 周星工程股份有限公司 用于处理基板的装置
CN103165369A (zh) * 2011-12-19 2013-06-19 北京北方微电子基地设备工艺研究中心有限责任公司 下电极机构和具有其的等离子体处理设备
US20180340258A1 (en) * 2017-05-29 2018-11-29 Samsung Display Co., Ltd. Chemical vapor deposition system

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CN113966543A (zh) 2022-01-21
CN113966543B (zh) 2023-06-30
TW202041708A (zh) 2020-11-16
TWI724773B (zh) 2021-04-11

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