WO2020098034A1 - Display panel and display device - Google Patents

Abstract

A display panel (100) comprises a plurality of sub-pixel units (92). Each sub-pixel unit (92) comprises a switch thin-film transistor (2), a drive thin-film transistor (1), and a micro light-emitting diode (5). A first source electrode (13) of the drive thin-film transistor (1) comprises a plurality of curved strips (131) connected with each other side by side. A first drain electrode (14) comprises a plurality of straight strips (141) disposed at intervals and a connection strip (142) connecting the plurality of straight strips (141) to each other. The straight strips (141) are inserted one-to-one into openings of the curved strips (141). Gaps are formed between the curved strips (131), the straight strips (141), and the connection strip (142) in a zigzag manner. A conductive channel (120) is formed at a portion of a first active layer (12) corresponding to the gaps.

Description

Display panel and display device

This application requires the priority of the Chinese patent application filed on November 12, 2018 with the application number 201811339338.4 and the invention titled "Display Panel and Display Device", the entire contents of which are incorporated by reference in this application.

Technical field

The present application relates to the field of display technology, in particular to a display panel and a display device.

Background technique

The statements here only provide background information related to the present application and do not necessarily constitute prior art.

Micro LED display is to thin, miniaturize and array the LED structure design, batch transfer Micro LED to the circuit substrate, integrate high-density micro LED array as display pixels, and carry on the substrate Packaging, complete a Micro LED display device. The minimum size of the micro LED can be 1 micron to 10 microns. Micro LED displays are organic light-emitting diode (Organic Light-Emitting Diode, OLED) displays that are self-luminous displays, but micro LED displays have the advantages of better material stability, longer life, and no image imprinting than OLED displays. Compared with LCD (Liquid Crystal Display), it has higher transmittance.

Compared with OLED, the micro-light emitting diode needs a larger current to drive when emitting light. According to the different semiconductor materials used, TFT (Thin Film Transistor) can be divided into a-Si (Amorphous Silicon), IGZO (Indium Gallium Zinc Oxide, Indium Gallium Zinc Oxide) and LTPS (Low Temperature) Poly-silicon, low-temperature polysilicon) three kinds. The electron mobility of a-si is only about 0.5cm2 / Vs, and its mobility is not enough to provide a large on-state current for current driving. The electron mobility of IGZO can reach 10 ～ 50cm2 / Vs, but the stability of IGZO's compressive stress is poor, so its stability needs to be improved. The electron mobility of LTPS can reach 100cm2 / Vs, but the complex structure and uniformity of its TFT device limit its application in next generation panels. Therefore, if a-Si-based TFT devices can be developed to drive micro LEDs, the mass production of micro LED displays will be greatly improved.

Application content

An object of the present application is to provide a display panel, including but not limited to achieving the purpose of large driving current required by micro light-emitting diodes, good stability, and suitable for mass production.

The technical solution adopted in the embodiments of the present application is: a display panel, including:

Substrate base; and

Multiple sub-pixel units, the array is arranged on the substrate base layer;

Wherein, the sub-pixel unit includes a switching thin film transistor, a driving thin film transistor, and a micro light-emitting diode; the driving thin film transistor includes a first gate, a first active layer, a first source, and a first drain, and the first A gate is connected to the switching thin film transistor, the first source is connected to the power terminal, and the first drain is connected to the micro light-emitting diode;

The first source electrode includes a plurality of curved bars connected side by side, and the first drain includes a plurality of spaced straight bars and connection bars connecting the plurality of straight bars; the straight bars Inserted into the opening of the curved bar in a one-to-one correspondence, a curved gap is formed between the curved bar and the straight bar and the connecting bar, and a portion of the first active layer corresponding to the gap is formed Conductive channel.

In one embodiment, the first active layer includes a first intrinsic semiconductor layer and an ohmic contact layer formed on both sides of the first intrinsic semiconductor layer; the material of the intrinsic semiconductor layer is amorphous Silicon, the material of the ohmic contact layer is amorphous silicon doped with n-type elements.

In one embodiment, the curved strip includes a semi-circular arc portion in a semi-circular arc shape and extension portions connected to both ends of the semi-circular arc portion.

In an embodiment, the length of the extending portion toward the first drain is 1 micrometer to 50 micrometers.

In one embodiment, the straight bar includes a rectangular portion connected to the connecting bar and a semi-circular portion provided at the top end of the rectangular portion.

In an embodiment, the radius of the semi-circular portion is 2 μm to 50 μm, the length of the conductive channel is 3 μm to 53 μm; the width-to-length ratio of the conductive channel is greater than or equal to 30.

In an embodiment, the width-to-length ratio of the conductive channel is less than or equal to 200.

In an embodiment, the side length of the sub-pixel unit is 5 μm to 500 μm, and the side length of the micro light emitting diode is 1 μm to 10 μm.

In an embodiment, one extension is shared between two adjacent curved strips.

In one embodiment, the micro light emitting diodes include red micro light emitting diodes, green micro light emitting diodes, and blue micro light emitting diodes, and the sub-pixel units include red sub-pixel units, green sub-pixel units, and blue sub-pixel units.

In an embodiment, the switching thin film transistor includes a second gate, a second active layer, a second source, and a second drain; the second drain is connected to the first gate.

In one embodiment, the display panel further includes a plurality of scan lines and a plurality of data lines provided on the substrate base layer; the second gate is connected to the scan line, and the second source Connect to the data line.

In one embodiment, the first gate and the second gate are arranged in the same layer, and the first source, the first drain, the second source and the second drain are arranged in the same layer.

In an embodiment, the first active layer and the second active layer have the same material.

In an embodiment, a curved strip and a straight strip form a horseshoe structure, and the second source and the second drain of the switching thin film transistor are correspondingly arranged in one or more horseshoe structures.

In one embodiment, a passivation layer is further provided above the switching thin-film transistor and the driving thin-film transistor, and the connection between the micro light-emitting diode and the first drain electrode penetrates the passivation layer.

Another object of this application is to provide a display panel, including:

Substrate base; and

Multiple sub-pixel units, the array is arranged on the substrate base layer;

Wherein, the sub-pixel unit includes a switching thin film transistor, a driving thin film transistor, and a micro light-emitting diode; the driving thin film transistor includes a first gate, a first active layer, a first source, and a first drain, and the first A gate is connected to the switching thin film transistor, the first source is connected to the power terminal, and the first drain is connected to the micro light-emitting diode;

The first source electrode includes a plurality of curved bars connected side by side, and the first drain includes a plurality of spaced straight bars and connection bars connecting the plurality of straight bars; the straight bars Inserted into the opening of the curved bar in a one-to-one correspondence, a curved gap is formed between the curved bar and the straight bar and the connecting bar, and a portion of the first active layer corresponding to the gap is formed Conductive channel

The conductive channel includes a first channel corresponding to a curved shape between the curved bar and the straight bar, and the width-to-length ratio of the first channel is 2-10.

In an embodiment, the conductive channel further includes a second channel corresponding to the straight bar between the curved bar and the connecting bar, and the plurality of first channels and the second channel are connected in sequence .

Another object of the present application is to provide a display device, including a display panel and a packaging layer provided on the light exit side of the display panel; the display panel includes:

Substrate base; and

Multiple sub-pixel units, the array is arranged on the substrate base layer;

Wherein, the sub-pixel unit includes a switching thin film transistor, a driving thin film transistor, and a micro light-emitting diode; the driving thin film transistor includes a first gate, a first active layer, a first source, and a first drain, and the first A gate is connected to the switching thin film transistor, the first source is connected to the power terminal, and the first drain is connected to the micro light-emitting diode;

The first source electrode includes a plurality of curved bars connected side by side, and the first drain includes a plurality of spaced straight bars and connection bars connecting the plurality of straight bars; the straight bars Inserted into the opening of the curved bar in a one-to-one correspondence, a curved gap is formed between the curved bar and the straight bar and the connecting bar, and a portion of the first active layer corresponding to the gap is formed Conductive channel.

In the display panel provided by the embodiment of the present application, a plurality of sub-pixel units are provided on the substrate base layer, and the first source of the driving thin-film transistor in each sub-pixel unit includes a plurality of curved strips connected side by side to drive the thin-film transistor. The first drain includes a plurality of straight bars arranged at intervals and a connection bar connecting the plurality of straight bars; the straight bars are inserted into the openings of the curved bars one by one, and the curved bars A tortuous gap is formed between the straight bar and the connection bar, and the second active layer forms a conductive channel corresponding to the gap, thereby significantly increasing the width of the conductive channel driving the thin film transistor Length ratio, allowing more driving current to pass between the first source and the first drain, which can meet the driving current requirements of the micro light emitting diode, reducing the manufacturing cost of the driving thin film transistor, and using the micro light emitting diode to form the sub-pixel The unit also has a high penetration rate and service life, thereby reducing energy consumption and increasing the service life of the display panel. In addition, the display panel of the present application uses switching thin film transistors and driving thin film transistors to drive the micro light-emitting diodes to emit light and display. The structure is simple and easy to manufacture, and the manufacturing yield is high and the aperture ratio is high, which is suitable for mass production of display panels. The display panel and the display device provided by the embodiments of the present application meet the driving current requirements of the micro light emitting diode, reduce the manufacturing cost of the driving thin film transistor, and use the micro light emitting diode to form the sub-pixel unit, and also have high transmittance and use The service life reduces the energy consumption and improves the service life of the display panel. The structure is simple and easy to manufacture, and the production yield is high and the opening rate is high, which is suitable for mass production of display panels.

BRIEF DESCRIPTION

In order to more clearly explain the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required in the embodiments or exemplary technical descriptions. Obviously, the drawings in the following description are only the present application For some of the embodiments, for those of ordinary skill in the art, without paying any creative work, other drawings may be obtained based on these drawings.

1 is a schematic structural diagram of a display panel provided by an embodiment of the present application;

2 is a schematic diagram of a longitudinal section of a display panel provided by an embodiment of the present application;

3 is another schematic structural view of a longitudinal section of a display panel provided by an embodiment of the present application;

4 is a schematic diagram of a pixel driving circuit in a display panel provided by an embodiment of the present application;

5 is a schematic circuit diagram of a sub-pixel unit in a display panel provided by an embodiment of the present application;

6 is a schematic diagram of a single horseshoe structure in a display panel provided by an embodiment of the present application;

7 is a schematic diagram of a channel in a display panel provided by an embodiment of the present application;

8 is a schematic diagram of a connection of a horseshoe structure in a display panel provided by an embodiment of the present application;

9 is a schematic diagram of the aspect ratio of the driving thin film transistor in the display panel provided by the embodiment of the present application;

10 is another connection schematic diagram of the horseshoe structure in the display panel provided by the embodiment of the present application;

11 is a schematic structural diagram of a display device provided by an embodiment of the present application.

detailed description

In order to make the purpose, technical solutions and advantages of the present application more clear, the present application will be described in further detail in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

It should be noted that when a component is referred to as being “fixed” or “disposed on” another component, it can be directly on another component or indirectly on the other component. When a component is said to be "connected to" another component, it can be directly or indirectly connected to the other component. The terms "upper", "lower", "left", "right", etc. indicate the orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, only for the convenience of description, not to indicate or imply the device referred to Or the element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of this patent. For those of ordinary skill in the art, the specific meaning of the above terms can be understood according to specific circumstances. The terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more, unless specifically defined otherwise.

In order to explain the technical solutions described in this application, the following detailed description will be made in conjunction with specific drawings and embodiments.

Referring to FIGS. 1 and 4, the present application first provides a display panel 100 including a substrate base layer 9 and a plurality of pixel units arranged on the substrate base layer 9, each pixel unit including a plurality of sub-pixels of different colors Pixel unit 92.

Each sub-pixel unit 92 includes a switching thin-film transistor 2, a driving thin-film transistor 1, a capacitive element 3, and a micro light-emitting diode 5. For the sub-pixel units 92 of different colors, the light emitting colors of the micro light-emitting diodes 5 are different. In an embodiment, the sub-pixel units 92 are a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit respectively. Correspondingly, the red sub-pixel unit, the green sub-pixel unit, and the blue sub-pixel unit include red micro-pixels, respectively. Light emitting diodes, green micro light emitting diodes and blue micro light emitting diodes. Of course, the pixel unit may also include a yellow sub-pixel unit or a white sub-pixel unit, or be composed of sub-pixel units of other colors, which is not limited.

The micro light-emitting diode 5 includes a wafer, and the semiconductor material in the wafer emits light under the action of the current between the positive electrode and the negative electrode. Depending on the semiconductor material, different colors of light are emitted. The semiconductor material is a compound containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N), etc. Specifically, for example, red-emitting aluminum gallium arsenide, gallium arsenide, gallium arsenide phosphide, phosphorus Indium gallium phosphide, aluminum gallium phosphide (doped zinc oxide), green light-emitting aluminum gallium phosphide, indium gallium nitride / gallium nitride, gallium phosphide, indium gallium aluminum phosphide, aluminum gallium phosphide, yellowish (Orange, orange) aluminum indium phosphide, gallium gallium arsenide, indium gallium aluminum phosphide, gallium phosphide, silicon carbide, blue light emitting gallium nitride, zinc selenide, etc.

In a specific embodiment, the red micro-LEDs included in the red sub-pixel unit use gallium arsenide material; the green micro-diodes included in the green sub-pixel unit use gallium phosphide material, and the blue micro-luminescence included in the blue sub-pixel unit The diode uses gallium nitride material.

In an embodiment, the side length of the micro LED 5 is 1 μm to 100 μm, and the area is 5 to 800 μm 2. The side length of the micro LED 5 can be at least 1 μm to 10 μm.

The side length of the sub-pixel unit 92 ranges from 5 μm to 500 μm, and its area may be from 10 μm to 1000 μm. The micro light emitting diode 5 occupies a certain area in the sub-pixel unit 92, except for the area of the micro light emitting diode 5, the other is occupied by the pixel driving circuit.

Depending on the specifications, resolution, etc. of the display panel 100, micro-light-emitting diodes 5 of corresponding sizes may be used.

The display panel provided by the embodiment of the present application uses the switching thin film transistor and the driving thin film transistor to drive the micro light-emitting diode to emit light and display. The structure is simple and easy to manufacture, and the manufacturing yield is high and the aperture ratio is high.

As shown in FIGS. 1 and 4, a plurality of scanning lines 6 and a plurality of data lines 7 are also formed on the substrate base layer 9, and the sub-pixel unit 92 is disposed between the scanning lines 6 and the data lines 7, switching thin film transistors 2. The driving thin-film transistor 1 and the capacitive element 3 constitute a pixel driving circuit of each sub-pixel unit 92, which is configured to drive the micro light-emitting diode 5 to emit light.

Specifically, as shown in FIGS. 3 and 4, the driving thin film transistor 1 includes a first gate 11 provided on the substrate base layer 9, a gate insulating layer 102 formed on the first gate 11, and a gate insulating layer The first active layer 12 on 102 and the first source electrode 13 and the first drain electrode 14 connected to the two ends of the first active layer 12, respectively, and the switching thin film transistor 2 includes a second gate disposed on the substrate base layer 9 21. A gate insulating layer 102 formed on the second gate 21, a second active layer 22 formed on the gate insulating layer 102, and a second source electrode 23 connected to both ends of the second active layer 22 and Second drain 24.

The first gate electrode 11 and the second gate electrode 21 are arranged in the same layer and formed simultaneously by a photomask process, and the first source electrode 13, the first drain electrode 14, the second source electrode 23 and the second drain electrode 24 are arranged in the same layer and Simultaneously formed by a mask process. The second drain 24 is connected to the first gate 11 through the first via 106 penetrating the gate insulating layer 102, see FIG. 5.

4 and 5, the second gate 21 is connected to the scan line 6, and the second source 23 is connected to the data line 7. When the scan signal Scan on the scan line 6 causes the switching thin film transistor 2 to turn on, the data line 7 The above data signal Data can be transmitted to the second drain 24.

The first source electrode 13 is connected to the power supply terminal (Vdd in FIG. 4) through the power supply line 8, and the first drain electrode 14 is connected to the micro light-emitting diode 5. When the data signal Data causes the driving thin film transistor 1 to turn on, current from the power supply terminal can pass The first source electrode 13 and the first gate electrode 11 reach the micro light emitting diode 5 so that the micro light emitting diode 5 can emit light.

The capacitive element 3 is connected between the first gate electrode 11 and the first drain electrode 14 of the driving thin film transistor 1 to provide a sustain voltage for turning on the driving thin film transistor 1.

In this embodiment, the driving thin film transistor 1 is an a-Si TFT, and its first active layer 12 includes a first intrinsic semiconductor layer and an ohmic contact layer formed on both sides of the first intrinsic semiconductor layer (not Icon). The material of the first intrinsic semiconductor layer is amorphous silicon, and the ohmic contact layer is amorphous silicon doped with n-type ions, such as nitrogen (N), phosphorus (P), and arsenic (As) elements. The switching thin film transistor 2 can also be an n-type a-Si TFT, so that the second active layer 22 can be formed in the same process as the first active layer 12 of the driving thin film transistor 1 to improve the manufacturing efficiency; it can also be other types of thin films Transistor, no longer repeat.

As shown in FIGS. 2, 4 and 5, the lower electrode plate 32 of the capacitive element 3 and the second drain 24 are disposed in the same layer, and are connected between the second drain 24 and the first gate 11. A passivation layer 103 is provided above the driving thin film transistor 1 and the switching thin film transistor 2, and the upper electrode plate 31 of the capacitor element 3 is provided above the passivation layer 103. A protective layer 104 is further provided on the passivation layer 103 to protect the upper electrode plate 31 of the capacitive element 3. The protective layer 104 is provided with an opening defining area 105 corresponding to the micro LED 5. The first drain 14 is connected to the upper electrode plate 31 of the capacitor 3 and the micro LED 5 through a second via 107, and the second via 107 penetrates the Passivation layer 103. Alternatively, as shown in FIG. 2, the second via hole 107 penetrates the passivation layer 103 and the protective layer 104, and the micro light-emitting diode 5 is provided on the protective layer 104.

5 to FIG. 8, the first source electrode 13 of the driving thin film transistor 1 includes a plurality of curved bars 131 connected side by side, and the opening direction of each curved bar 131 faces the first drain 14.

The first drain 14 of the driving thin film transistor 1 is in a comb shape, and includes a plurality of straight bars 141 arranged at intervals and a connecting bar 142 connecting the plurality of straight bars 141, and the straight bars 141 are inserted into the curved bars one by one In the opening of 131 (for convenience of description, a curved bar 131 and a straight bar 141 are defined as a horseshoe structure), so that a curved first gap is formed between the curved bar 131 and the straight bar 141 , A straight strip-shaped second gap portion is formed between the curved strip 131 and the connecting strip 142, a plurality of first gap portions and a plurality of second gap portions are sequentially connected to form a zigzag gap, the second active layer 22 A conductive channel 120 is formed at a portion corresponding to the tortuous gap. The conductive channel 120 includes a first channel 121 corresponding to the first gap portion and a second channel 122 corresponding to the second gap portion, see FIG. 7.

In the driving thin film transistor 1 of the present application, a zigzag gap is formed between the first source electrode 13 and the first drain electrode 14, and when a voltage is applied to the first gate electrode 11, the first source electrode 13 flows toward the first drain electrode 14 Current flows in the direction of, the first active layer 12 corresponds to the gap to form a conductive channel 120, and in the direction of the current, the width of the gap is the length L of the conductive channel 120, in a direction perpendicular to the current, The total length of the gap is the width W of the conductive channel 120, whereby the width-to-length ratio W / L of the conductive channel 120 of the driving thin film transistor 1 can be improved, and the first source electrode 13 and the first drain of the driving thin film transistor 1 Between 14 allows a larger drive current, so that the micro-light-emitting diode 5 can be driven to emit light.

Please refer to FIG. 6 and FIG. 9 for a specific description with a horseshoe structure.

The curved bar 131 includes a semi-circular arc portion 1311 in a semi-circular arc shape, and an extension portion 1312 connected to both ends of the semi-circular arc portion 1311 and extending toward the connecting bar 142, and the straight bar 141 includes a rectangle connected to the connecting bar 142 The portion 1412 and the semicircular portion 1411 provided at the tip of the rectangular portion 1412. The extensions 1312 are located on both sides of the straight bar 141 respectively, and the semicircle 1411 corresponds to the semicircular arc 1311, thereby forming a semicircular arc channel 1211 of uniform width between the semicircle 1411 and the semicircular arc 1311, extending A strip-shaped channel 1212 with a uniform width is formed between the portion 1312 and the rectangular portion 1412. The semi-circular arc-shaped channel 1211 is connected to the two strip-shaped channels 1212 to form a first channel 121, and the width of the semi-circular arc-shaped channel 1211 and the width of the strip-shaped channel 1212 are also equal.

Optionally, the straight bars 141 and the connecting bars 142 are vertically connected, and the curved bars 131 are sequentially connected and arranged along the direction parallel to the connecting bars 142. The extending portion 1312 is vertically connected to both ends of the semi-circular arc portion 1311.

As shown in FIG. 9, let the radius of the semicircular portion 1411 be a, the width of the gap (that is, the length of the channel) be L, the length of the extending portion 1312 extending toward the first drain 14 be c, and the center of the semicircular portion 1411 to The distance of the side of the extension portion 1312 close to the semicircular portion 1411 is b (b = a + L), then within the range of the first gap portion, the width-to-length ratio W / L (1) of a first channel 121 is calculated by the formula for:

In the range of the second gap, the width-to-length ratio of one second channel 122 is roughly the ratio of the sum of the widths of the two extensions 1312 and the distance between the extension 1312 and the connecting bar 142, that is

Since the plurality of first channels 121 and the second channel 122 each contribute to the width W of the conductive channel 120, but do not change the length L of the conductive channel 120, the plurality of first channels 121 and the second channel After the channel 122 is connected, the width-to-length ratio W / L of the conductive channel 120 of the driving thin film transistor 1 is the sum of multiple W / L (1) and multiple W / L (2), which can greatly increase the conductive channel 120 aspect ratio.

In one embodiment, a is 2-50 microns, b is 5-50 microns, and c is 1-50 microns. The range of L is 3 microns to 53 microns.

In one embodiment, for one first channel 121, 2≤W / L (1) ≤10.

The number of the first channels 121, that is, the number of the curved strips 131 of the first source electrode 13 may be multiple, optionally, may be more than 10, such as 15 or more, 20 or more, etc., depending on W / L ( 1) and the drive current requirements of the micro light emitting diode 5 are not limited.

In an embodiment, the width-to-length ratio W / L of the conductive channel 120 of the driving thin film transistor 1 is greater than or equal to 30.

In an embodiment, the width-to-length ratio W / L of the conductive channel 120 is less than or equal to 200, limited by the area of the sub-pixel unit 92 and based on meeting the driving current requirements of the micro light-emitting diode 5.

Please refer to FIG. 10, which is another connection method of the curved bar 131. An extension 1312 is shared between two adjacent curved bars 131. Since W / L (2) <W / L (1), such a design can reduce the number of second channels 122, so that more first channels 121 can be formed in each driving thin film transistor 1, further improving the driving film The width-to-length ratio of the conductive channel 120 of the transistor 1 is W / L.

In FIGS. 8 and 10, when the widths of the extending portion 1312 and the semicircular arc portion 1311 are sufficiently small, the conductive channel 120 is mainly composed of the first channel 121, and the second channel 122 can be ignored. Simply consider the connection of multiple first channels 121 to derive the width-to-length ratio of the conductive channel 120 to obtain the required width-to-length ratio.

a-Si TFT has the advantages of simple manufacturing process, low cost, high yield, and low off-state leakage current. In the display panel provided by the embodiment of the present application, the width-to-length ratio of a-Si TFT can be improved, and the drive current Significant improvements have made it possible to use a-Si TFT-driven micro-light-emitting diodes for pixel display, as well as mass production of a-Si TFT-driven micro-light-emitting diode display panels.

Referring to FIG. 5, the switching thin film transistor 2 may also adopt the same horseshoe structure as the driving thin film transistor 1, for example, including one horseshoe structure or two or more horseshoe structures connected in sequence, which is not limited in this application. In an embodiment, the switching thin film transistor 2 may be completely the same as the driving thin film transistor 1, including the same and the same number of horseshoe structures as the driving thin film transistor 1. In this way, the voltage stability on the capacitor element 3 can be further improved, so that the current flowing through the micro light-emitting diode 5 can be made more stable, and the light emission of the micro-light emitting diode 5 can be stabilized, thereby ensuring the stability of the display screen.

In an embodiment, the switching thin film transistor 2 and the driving thin film transistor 1 may be respectively disposed on both sides of the capacitive element 3, and the micro light emitting diode 5 may be provided on one side of the switching thin film transistor 2, the driving thin film transistor 1 and the capacitive element 3. Of course, in other embodiments, each structure of the pixel driving circuit may also be arranged in other positions, which is not limited thereto.

The present application also provides a display device 200, as shown in FIG. 11, including the above-mentioned display panel 100 and an encapsulation layer 300 provided above the display panel 100. The encapsulation layer 300 is a transparent layer, such as a glass layer or a transparent plastic layer. The light emitted by the micro light-emitting diode 5 is emitted upward through the encapsulation layer 300 to form a screen for display.

The above are only optional embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of this application shall be included in the scope of the claims of this application.

Claims (19)

A display panel, including: Substrate base; and Multiple sub-pixel units, the array is arranged on the substrate base layer; Wherein, the sub-pixel unit includes a switching thin film transistor, a driving thin film transistor, and a micro light-emitting diode; the driving thin film transistor includes a first gate, a first active layer, a first source, and a first drain, and the first A gate is connected to the switching thin film transistor, the first source is connected to the power terminal, and the first drain is connected to the micro light-emitting diode; The first source electrode includes a plurality of curved bars connected side by side, and the first drain includes a plurality of spaced straight bars and connection bars connecting the plurality of straight bars; the straight bars Inserted into the opening of the curved bar in a one-to-one correspondence, a curved gap is formed between the curved bar and the straight bar and the connecting bar, and a portion of the first active layer corresponding to the gap is formed Conductive channel. The display panel of claim 1, wherein the first active layer includes a first intrinsic semiconductor layer and an ohmic contact layer formed on both sides of the first intrinsic semiconductor layer; the intrinsic semiconductor The material of the layer is amorphous silicon, and the material of the ohmic contact layer is amorphous silicon doped with n-type elements. The display panel according to claim 1, wherein the curved strip includes a semi-circular arc portion having a semi-circular arc shape and extension portions connected to both ends of the semi-circular arc portion. The display panel of claim 3, wherein a length of the extending portion toward the first drain is 1 micrometer to 50 micrometers. The display panel of claim 1, wherein the straight bar includes a rectangular portion connected to the connecting bar and a semi-circular portion provided at a top end of the rectangular portion. The display panel according to claim 5, wherein the radius of the semi-circular portion is 2 to 50 microns, the length of the conductive channel is 3 to 53 microns; the width to length ratio of the conductive channel is greater than or Equal to 30. The display panel of claim 6, wherein the width-to-length ratio of the conductive channel is less than or equal to 200. The display panel of claim 1, wherein the side length of the sub-pixel unit is 5 μm to 500 μm, and the side length of the micro light emitting diode is 1 μm to 10 μm. The display panel according to claim 2, wherein one extension portion is shared between two adjacent curved strips. The display panel of claim 1, wherein the micro light emitting diodes include red micro light emitting diodes, green micro light emitting diodes, and blue micro light emitting diodes, and the sub-pixel units include red sub-pixel units, green sub-pixel units, and Blue sub-pixel unit. The display panel of claim 1, wherein the switching thin film transistor includes a second gate, a second active layer, a second source, and a second drain; the second drain is connected to the first One grid. The display panel according to claim 11, wherein the display panel further comprises a plurality of scan lines and a plurality of data lines provided on the substrate base layer; the second gate is connected to the scan line, The second source is connected to the data line. The display panel of claim 11, wherein the first gate and the second gate are provided in the same layer, and the first source, the first drain, the second source and the second drain are in the same layer Settings. The display panel of claim 11, wherein materials of the first active layer and the second active layer are the same. The display panel of claim 11, wherein one of the curved strip and the straight strip forms a horseshoe structure, and the second source and the second drain of the switching thin film transistor correspond to one or more Horseshoe structure set. The display panel according to claim 1, wherein a passivation layer is further provided above the switching thin film transistor and the driving thin film transistor, and the connection between the micro light emitting diode and the first drain electrode penetrates the passivation layer . A display panel, including: Substrate base; and Multiple sub-pixel units, the array is arranged on the substrate base layer; Wherein, the sub-pixel unit includes a switching thin film transistor, a driving thin film transistor, and a micro light emitting diode; the driving thin film transistor includes a first gate, a first active layer, a first source, and a first drain, and the first A gate is connected to the switching thin film transistor, the first source is connected to the power terminal, and the first drain is connected to the micro light-emitting diode; The first source electrode includes a plurality of curved bars connected side by side, and the first drain includes a plurality of spaced straight bars and connection bars connecting the plurality of straight bars; the straight bars Inserted into the opening of the curved bar in a one-to-one correspondence, a curved gap is formed between the curved bar and the straight bar and the connecting bar, and a portion of the first active layer corresponding to the gap is formed Conductive channel The conductive channel includes a first channel corresponding to a curved shape between the curved bar and the straight bar, and the width-to-length ratio of the first channel is 2-10. The display panel of claim 17, wherein the conductive channel further comprises a second channel corresponding to a straight bar between the curved bar and the connecting bar, and the plurality of first channels and The second channels are connected in sequence. A display device, including a display panel and an encapsulation layer provided on the light exit side of the display panel; the display panel includes: Substrate base; and Multiple sub-pixel units, the array is arranged on the substrate base layer; Wherein, the sub-pixel unit includes a switching thin film transistor, a driving thin film transistor, and a micro light-emitting diode; the driving thin film transistor includes a first gate, a first active layer, a first source, and a first drain, and the first A gate is connected to the switching thin film transistor, the first source is connected to the power terminal, and the first drain is connected to the micro light-emitting diode; The first source electrode includes a plurality of curved bars connected side by side, and the first drain includes a plurality of spaced straight bars and connection bars connecting the plurality of straight bars; the straight bars Inserted into the opening of the curved bar in a one-to-one correspondence, a curved gap is formed between the curved bar and the straight bar and the connecting bar, and a portion of the first active layer corresponding to the gap is formed Conductive channel.

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