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WO2020014874A1 - 一种集成电路和终端设备 - Google Patents

一种集成电路和终端设备 Download PDF

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Publication number
WO2020014874A1
WO2020014874A1 PCT/CN2018/096010 CN2018096010W WO2020014874A1 WO 2020014874 A1 WO2020014874 A1 WO 2020014874A1 CN 2018096010 W CN2018096010 W CN 2018096010W WO 2020014874 A1 WO2020014874 A1 WO 2020014874A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation patch
integrated circuit
line
frequency band
radio frequency
Prior art date
Application number
PCT/CN2018/096010
Other languages
English (en)
French (fr)
Inventor
周伟希
常明
董海林
刘亮胜
尹红成
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN201880091939.XA priority Critical patent/CN111919335A/zh
Priority to PCT/CN2018/096010 priority patent/WO2020014874A1/zh
Priority to EP18927132.3A priority patent/EP3817144B1/en
Publication of WO2020014874A1 publication Critical patent/WO2020014874A1/zh
Priority to US17/150,365 priority patent/US11489247B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/342—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
    • H01Q5/35—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes using two or more simultaneously fed points
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0442—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0478—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with means for suppressing spurious modes, e.g. cross polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/321—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors within a radiating element or between connected radiating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
    • H01Q9/0457—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means electromagnetically coupled to the feed line

Definitions

  • the present application relates to the field of mobile communication technologies, and in particular, to an integrated circuit and a terminal device.
  • packaged antennas antenna packages
  • integrated with existing patch antennas packaged antennas have the characteristics of extremely short feed paths, high integration, small size, and high processing accuracy, which can make packaged antennas achieve better electrical performance and are easy to integrate in terminal equipment.
  • patch antennas are commonly used in smart phones.
  • a packaged antenna is usually used in order to achieve beamforming.
  • beam scanning in different directions can be achieved.
  • FIG. 1 A packaging structure of a millimeter wave antenna capable of implementing dual-frequency communication can be shown in FIG. 1.
  • the high-frequency radiation patch is directly fed through the feeding point to generate a high-frequency frequency response; the low-frequency radiation patch is coupled with the high-frequency radiation patch to generate a low-frequency frequency response, thereby achieving dual frequency jobs.
  • the low frequency frequency response needs to be achieved through the coupling of two radiating patches.
  • the size of the high-frequency radiation patch can be determined after determining the high-frequency band in which the packaged antenna operates; in addition, according to the packaging requirements of the antenna, there is a fixed requirement for the variation range of the distance between the two radiation patches. Then, under the condition that the size of the high-frequency radiation patch and the variation range of the distance between the two radiation patches are fixed, the coupling degree of the two radiation patches is a certain value within a certain range, and the low-frequency frequency response The frequency band can only be changed within a relatively fixed range. That is to say, with the packaged antenna shown in FIG. 1, the range of low-frequency bands that can be used is small, and it is difficult to meet different usage requirements.
  • the embodiments of the present application provide an integrated circuit and a terminal device, which are used to solve the problem that the low-frequency band range of the existing dual-band antenna is relatively small and it is difficult to meet the usage requirements.
  • an embodiment of the present application provides an integrated circuit applied to a terminal device.
  • the integrated circuit includes a carrier structure, a first radiation patch, a second radiation patch, and a radio frequency processing chip.
  • the two radiation patches and the radio frequency processing chip are respectively placed on different layers of a carrier structure.
  • the carrier structure is provided with a first feeder line and a second feeder line.
  • the radio frequency processing chip feeds the first radiation patch through the first feeder line. Electricity, the radio frequency processing chip feeds power to the second radiation patch through the second feed line.
  • the integrated circuit can be regarded as an AIP integrated circuit.
  • the packaged antenna integrated circuit has the characteristics of extremely short feed path, high integration, small size, and high processing accuracy, which can make the packaged antenna obtain better electrical performance. And it can be widely used in 5G communication systems and future communication systems.
  • the integrated circuit can be used as an array element in an antenna array, or as an independent packaged antenna.
  • the RF processing chip may be connected to the first feed line and the second feed line through solder bumps, respectively.
  • the first radiation patch and the second radiation patch are placed on different layers of the carrier structure, and can be used to receive / send different frequency bands (hereinafter referred to as the first frequency band and the second frequency band). Signals, so the integrated circuit can achieve dual-frequency operation.
  • the first radiation patch and the second radiation patch are respectively fed through different feeder lines (that is, the first feeder line and the second feeder line), so the first radiation patch and the The coupling degree of the second radiation patch is small, and the frequency range of the first frequency band corresponding to the first radiation patch and the frequency range of the second frequency band corresponding to the second radiation patch can be adjusted separately.
  • the first frequency band can be adjusted by adjusting the first size
  • the second frequency band can be adjusted by adjusting the second size.
  • the first radiation patch and the first The degree of coupling between the feeders can be adjusted to the first frequency band, and the degree of coupling between the second radiation patch and the second feeder can be adjusted to adjust the second frequency band. Therefore, the design of the integrated circuit is more flexible, and the tunability of the two frequency bands is higher, which can meet different application requirements.
  • the first radiation patch has a first size corresponding to a signal in a first frequency band
  • the second radiation patch has a second size corresponding to a signal in a second frequency band
  • the first frequency band can be adjusted by adjusting the first size
  • the second frequency band can be adjusted by adjusting the second size
  • the radio frequency processing chip is provided with a first radio frequency line corresponding to a signal in a first frequency band and a second radio frequency line corresponding to a signal in a second frequency band, and the first feeder line is connected to the first radio frequency line, and the second feeder line The electric wire is connected to the second radio frequency line.
  • the first radiation patch may be connected to the first radio frequency line through the first feeder, so as to transmit the received first frequency band signal to the first radio frequency line for processing, or realize the first output of the first radio frequency line.
  • the frequency band signal is sent through the first radiation patch;
  • the second radiation patch can be connected to the second radio frequency line through the second feeder to realize the transmission of the received second frequency band signal to the second radio frequency line for processing, or to realize the The signals in the second frequency band output by the two radio frequency lines are sent through the second radiation patch.
  • the bearing structure includes a first bearing structure and a second bearing structure.
  • the first bearing structure is used to carry the first radiation patch
  • the second bearing structure is used to carry the second radiation patch.
  • the carrier structure in the integrated circuit may further include a ground layer.
  • the ground layer is provided with an opening through which the first feeder line and the second feeder line pass to the first radiation patch and the second radiation patch, respectively. Feed.
  • the first radiation patch may be located between the second radiation patch and the ground layer.
  • the ground layer can be used as a reference ground for the first radiation patch
  • the first radiation patch can be used as a reference ground for the second radiation patch.
  • a window may be provided on the first radiation patch, and the second feed line passes through the window on the first radiation patch to The second radiation patch is fed.
  • the integrated circuit provided in the first aspect may further include a plurality of metal pillars, one end of each of the plurality of metal pillars is connected to the ground plane, and One end is connected to the first radiation patch, a plurality of metal posts form a surrounding circle around the first radiation patch, and a second feeder line passes through the surrounding circle.
  • the surrounding circle formed by multiple metal pillars can be understood as the surrounding circle formed by projection of multiple metal pillars in space.
  • a plurality of metal pillars form a surrounding circle around the first radiation patch.
  • One possible implementation manner is: a plurality of metal pillars form a surrounding circle around a center (or a vertical line) of the first radiation patch.
  • the first power feed line may be located outside the surrounding circle formed by the plurality of metal pillars.
  • the shape of the surrounding circle formed by the plurality of metal pillars is not specifically limited.
  • the surrounding circle may be a square, a rectangle, a circle, or the like.
  • the surrounding circle formed by multiple metal pillars can be regarded as the potential zero area of the first radiation patch.
  • the second feeder line is arranged in the surrounding circle formed by multiple metal pillars, that is, the second feeder line is arranged in the first radiation.
  • the potential zero area of the patch can be used to isolate the feeding path of the second radiation patch from the feeding path of the first radiation patch, thereby improving the isolation between the first frequency band signal and the second frequency band signal.
  • the second frequency band signal when the second feed line passes through the window on the first radiation patch to feed the second radiation patch, when the second feed line passes through the window of the first radiation patch, the second frequency band signal will also Causes interference to signals in the first frequency band; by setting multiple metal pillars, the opening window of the first radiation patch is in the potential zero region of the first radiation patch, and the first frequency band signal is no longer radiated at the opening window, so the above scheme is adopted The interference between the first frequency band signal and the second frequency band signal can be reduced.
  • the first feeder may include a first vertical feeder and a first horizontal feeder
  • the second feeder may include a second vertical feeder and a second horizontal feeder
  • the first radiation patch includes two feeding points corresponding to the first vertical feeder and the first horizontal feeder respectively
  • the second radiation patch includes the second vertical feeder and the second horizontal feeder respectively. Two feed points corresponding to the wires.
  • the positions of the two feeding points on the first radiation patch and the positions of the two feeding points on the second radiation patch can be set as follows: the two feeding points on the first radiation patch
  • the polarization directions of the two radiating patches are 90 ° different, and the polarization directions of the two feeding points on the second radiating patch are different by 90 °.
  • the differences in the polarization directions of the feed points are 90 ° and 180 °, respectively.
  • the integrated circuit can generate dual-polarized radiation (in the horizontal and vertical polarization directions) in the first frequency band, and also generate (in the horizontal and vertical polarization directions) in the second frequency band. Dual-polarized radiation. That is to say, adopting the above scheme can make the integrated circuit achieve dual polarization. Because the dual-polarized antenna has the characteristics of dual-channel communication in the same frequency band, the duplex operation can be achieved through the dual-polarized antenna, thereby increasing the communication capacity, the system sensitivity, and the anti-multipath effect of the system.
  • a first slot may also be provided on the first radiation patch, the first vertical feed line and The first horizontal feed lines are located on both sides of the first slot.
  • the first slot can to some extent isolate the first frequency band signal transmitted in the first vertical feeder and the first frequency band signal transmitted in the first horizontal feeder, so as to improve the first frequency band signals in the two polarization directions. The effect of isolation.
  • a second slot can also be provided on the second radiation patch, and the second vertical feeder line And the second horizontal feeder are located on both sides of the second slot.
  • the second slot can to some extent isolate the second frequency band signal transmitted in the second vertical feeder and the second frequency band signal transmitted in the second horizontal feeder, thereby improving the second frequency band signal in the two polarization directions. The effect of isolation.
  • first slot and the second slot are not specifically limited in the implementation of the present application, as long as the first slot can be used to isolate two feeding points on the first radiation patch.
  • the second slot can be used to isolate two feeding points on the second radiation patch.
  • the first slot and the second slot may both be T-shaped slots.
  • the first radiation patch and the second radiation patch are parallel to each other, and the first radiation patch is aligned with the center of the second radiation patch.
  • the center alignment of the first radiation patch and the second radiation patch can be understood as: the line connecting the center of the first radiation patch and the center of the second radiation patch is approximately perpendicular to the first radiation patch.
  • the pattern of the relative field strength of the radiation field at a certain distance from the integrated circuit as a function of direction is symmetrical, that is, the pattern of the integrated circuit is It is symmetrical, so the integrated circuit can obtain better performance.
  • the first radiation patch is divided into a first part and a second part, and the first part of the first radiation patch and the second part of the first radiation patch are connected by a tunable capacitor or a switching unit.
  • the frequency range of the first frequency band is adjusted by adjusting the capacitance value of the tunable capacitor or controlling the on / off of the switching unit.
  • the second radiation patch is also divided into a first part and a second part, and the first part of the second radiation patch and the second part of the second radiation patch are connected through a tunable capacitor or a switching unit.
  • the specific structure and materials of the bearing structure are not limited in the embodiments of the present application.
  • the bearing structure may include: stacked dielectric layers; or, alternately stacked dielectric layers and metal layers; or, alternately stacked dielectric layers and metal ball structures; or, alternately stacked dielectric layers and metal pillar structures; or, alternately Laminated plastic ball structure and metal layers.
  • the bearing structure is only formed by stacking the dielectric
  • the two materials such as metal and dielectric, metal and plastic
  • the packaging process is more complicated, it can provide the first aspect Integrated circuits bring better electrical performance.
  • the metal ball structure may include multiple metal balls; the metal pillar structure may include multiple metal pillars; and the plastic ball structure may include multiple plastic balls.
  • the material of the dielectric layer includes, but is not limited to, organic resin, polytetrafluoroethylene, and polytetrafluoroethylene composite material containing glass fiber cloth;
  • the material of the metal layer includes, but is not limited to, copper and tin;
  • the material of the metal pillar structure includes but Limited to copper and tin;
  • materials for metal ball structures include, but are not limited to, copper and tin.
  • an embodiment of the present application provides a terminal device, where the terminal device includes the integrated circuit provided in the first aspect or any one of its possible designs.
  • the terminal device provided in the second aspect may further include: a printed circuit board PCB, and a bearing structure in the integrated circuit is connected to the PCB through a ball grid array BGA.
  • the terminal device includes, but is not limited to, a smart phone, a smart watch, a tablet computer, a virtual reality (VR) device, an augmented reality (AR) device, a personal computer, a handheld computer, and a personal digital assistant.
  • a smart phone a smart watch, a tablet computer
  • a virtual reality (VR) device a virtual reality (VR) device
  • AR augmented reality
  • personal computer a handheld computer
  • a personal digital assistant a personal digital assistant
  • FIG. 1 is a schematic structural diagram of a dual-frequency antenna provided in the prior art
  • FIG. 2 is a schematic structural diagram of a first integrated circuit according to an embodiment of the present application.
  • FIG. 3 is a schematic diagram of connection between a first feeder line, a second feeder line, and a radio frequency processing chip according to an embodiment of the present application;
  • FIG. 4 is a schematic diagram of a second structure provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a third integrated circuit according to an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a fourth integrated circuit according to an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a fifth integrated circuit according to an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a sixth integrated circuit according to an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a seventh integrated circuit according to an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a first radiation patch according to an embodiment of the present application.
  • FIG. 11 is a schematic structural diagram of an eighth integrated circuit according to an embodiment of the present application.
  • FIG. 12 is a schematic structural diagram of a second radiation patch according to an embodiment of the present application.
  • FIG. 13 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
  • FIG. 14 is a schematic diagram of a simulation result of return loss of an electronic device according to an embodiment of the present application.
  • 15 is a schematic diagram of a simulation result of an isolation degree between a high frequency band and a low frequency band of an electronic device according to an embodiment of the present application;
  • 16 is a schematic diagram of a simulation result of isolation of signals in two polarization directions in an electronic device according to an embodiment of the present application;
  • 17 is a schematic diagram of simulation results of high-frequency gain and low-frequency gain of an electronic device according to an embodiment of the present application.
  • FIG. 18 is a schematic structural diagram of a ninth integrated circuit according to an embodiment of the present application.
  • the embodiments of the present application provide an integrated circuit and a terminal device, which are used to solve the problem that the low-frequency band range of the existing dual-band antenna is relatively small and it is difficult to meet the usage requirements.
  • the integrated circuit can be regarded as a packaged antenna integrated circuit (ie, AIP) used in a terminal device.
  • AIP packaged antenna integrated circuit
  • the integrated circuit can be used as an array element in an antenna array or as an independent packaged antenna.
  • the standard adopted by the terminal device includes, but is not limited to, code division multiple access (CDMA), wide-band code division multiple access (WCDMA), time division synchronization code Time-division-synchronous code multiple access (TD-SCDMA), long term evolution (LTE), and 5th generation (5G) standards.
  • CDMA code division multiple access
  • WCDMA wide-band code division multiple access
  • TD-SCDMA time division synchronization code
  • LTE long term evolution
  • 5G 5th generation
  • the integrated circuit 200 includes a carrier structure 201, a first radiation patch 202, a second radiation patch 203, and a radio frequency processing chip 204.
  • the first radiation patch 202, the second radiation patch 203, and the radio frequency processing chip 204 are respectively placed on different layers of the carrier structure 201.
  • the carrier structure 201 is provided with a first feed line 205 and a second feed line 206.
  • the RF processing chip 204 feeds power to the first radiation patch 202 through the first feed line 205, and the RF processing chip 204 feeds to the first radiation line 202 through the second feed line 206.
  • the two radiation patches 203 feed power.
  • the carrier structure 201 may include a first carrier structure and a second carrier structure.
  • the first carrier structure is used to carry the first radiation patch 202
  • the second carrier structure is used to carry the second radiation patch. 203.
  • the first radiation patch 202 and the second radiation patch 203 are placed on different layers of the carrier structure 201, and can be used to receive / send different frequency bands (hereinafter referred to as the first frequency band and the second frequency band). Signal, so the integrated circuit 200 can be used as a package antenna to achieve dual-frequency operation.
  • the first frequency band and the second frequency band may both be millimeter wave bands in the 5G system.
  • the first radiation patch 202 has a first size corresponding to a signal in a first frequency band
  • the second radiation patch 203 has a second size corresponding to a signal in a second frequency band. That is, the first radiation patch 202 can be used to receive / send signals in the first frequency band, and the second radiation patch 203 can be used to receive / send signals in the second frequency band. Therefore, the integrated circuit 200 can work in two frequency bands, the first frequency band and the second frequency band, to achieve dual-frequency operation.
  • the first radiation patch 202 and the second radiation patch 203 are respectively fed through different feeder lines (ie, the first feeder line 205 and the second feeder line 206), the first radiation patch 202 and the second radiation patch
  • the degree of coupling of the patch 203 is small.
  • the first frequency band can be adjusted by adjusting the first size
  • the second frequency band can also be adjusted by adjusting the second size, that is, the first frequency band and the second frequency band can be adjusted separately.
  • Design flexibility In the integrated circuit 200, in order to reduce interference between two radiation patches, generally, the frequency band corresponding to the radiation patch located in the upper layer is higher, and the frequency band corresponding to the radiation patch located in the lower layer is lower. That is, for the example of FIG. 2, the first frequency band is a low-frequency band, and the second frequency band is a high-frequency band.
  • the first frequency band may correspond to a 28 GHz frequency band
  • the second frequency band may correspond to a 39 GHz frequency band.
  • the radio-frequency processing chip 204 may be provided with a first radio-frequency line corresponding to a signal in a first frequency band and a second radio-frequency line corresponding to a signal in a second frequency band.
  • a radio frequency line is connected, and the second feeder line 206 is connected to the second radio frequency line.
  • the first radiation patch 202 When the first radiation patch 202 receives / sends a signal in the first frequency band, it can be connected to the first radio frequency line of the radio frequency processing chip 204 through the first feeder line 205, thereby transmitting the received signal in the first frequency band to the radio frequency processing.
  • the chip 204 performs processing, or sends the signal of the first frequency band output by the radio frequency processing chip 204 through the first radiation patch 202; when the second radiation patch 203 receives / sends the signal of the second frequency band, it can pass the second feed
  • the electric wire 206 is connected to the second RF line of the RF processing chip 204, so as to transmit the received signal in the second frequency band to the RF processing chip 204 for processing, or pass the signal in the second frequency band output by the RF processing chip 204 through the second radiation
  • the patch 203 is sent out.
  • the processing process of the first frequency band signal and the second frequency band signal by the radio frequency processing chip 204 is similar.
  • the processing process of the first frequency band signal is taken as an example to describe the processing process of the radio frequency processing chip 204 as an example.
  • the radio frequency processing chip 204 For the transmission process of the first frequency band signal, after receiving the intermediate frequency signal transmitted by the upper-level chip (such as the intermediate frequency chip), the radio frequency processing chip 204 performs the frequency mixing operation on the intermediate frequency signal through the mixer in the first radio frequency line; The phase shifter performs a phase shift operation on the mixed frequency signal to achieve beamforming. After the signal output from the phase shifter is amplified by an amplifier, the output signal of the amplifier is used as the final output frequency signal of the first frequency band. The first feeder line 205 transmits this radio frequency signal to the first radiation patch 202 and sends it out.
  • the intermediate frequency signal transmitted by the upper-level chip such as the intermediate frequency chip
  • the first radiation patch 202 can transmit the radio frequency signal to the first radio frequency circuit in the radio frequency processing chip 204 through the first feeder line 205 after receiving the radio frequency signal of the first frequency band signal.
  • the first radio frequency line may include an amplifier, a phase shifter, and a mixer.
  • the RF signal is amplified by an amplifier; then the amplified signal is phase-shifted by a phase shifter; and after the signal output by the phase shifter is mixed by a mixer, the first RF line mixes the output of the mixer
  • the signal is used as the final output IF signal and transmitted to a lower-level chip (such as an IF chip).
  • a lower-level chip such as an IF chip
  • the processing process of the radio frequency processing chip 204 may further include operations such as filtering, analog-to-digital conversion, and digital-to-analog conversion.
  • operations such as filtering, analog-to-digital conversion, and digital-to-analog conversion.
  • the first feed line 205 and the second feed line 206 can be connected to the RF processing chip 204 through solder bumps, for example, the first feed line 205 can be connected to the corresponding first frequency band signal through a solder bump.
  • the first radio frequency line is connected, and the second feeder line 206 may be connected to the second radio frequency line corresponding to the signal in the second frequency band through a solder bump.
  • a schematic diagram of the connection between the first feeder line 205 and the second feeder line 206 and the radio frequency processing chip 204 may be shown in FIG. 3.
  • connection between the first feed line 205 and the solder bump may be referred to as a first feed point or a first feed point
  • the first radiation patch 202 feeds a signal from the first feed point
  • the connection point of the solder bump may be referred to as a second feeding point or a second feeding point
  • the second radiation patch 203 feeds a signal from the second feeding point.
  • the first radiation patch 202 is disposed below the second radiation patch 203.
  • the first radiation patch 202 may also be placed above the second radiation patch 203.
  • the embodiment of this application does not specifically limit the stacking order of the first radiation patch 202 and the second radiation patch 203.
  • a window may be provided on the first radiation patch 202, and the second feeder 206 passes through the window on the first radiation patch 202 as the second radiation patch 203.
  • the first radiation patch 202 may not be provided with a window, and the second power supply line 206 may bypass the first radiation patch 202 to feed the second radiation patch 203, as shown in FIG. 4.
  • the method of feeding the second radiation patch 203 through the opening of the first radiation patch 202 through the second feed line 206 is illustrated. The electric method will not be described in detail.
  • the first radiation patch 202 is fed through a first feed line 205, and the second radiation patch 203 is fed through a second feed line 206.
  • the first feed line 205 can feed the first radiating patch 202 by direct feeding, and can also feed the first radiating patch 202 by coupling feeding.
  • the direct feeding method is used, The first feed line 205 is directly connected to the first radiation patch 202, as shown in FIG. 2; when the coupled feed method is used, the first feed line 205 is coupled to the first radiation patch 202; similarly, the second feed line 206
  • the second radiation patch 203 can be fed by a direct feeding method, or the second radiation patch 203 can be fed by a coupled feeding method.
  • the direct feeding method is used, the second feeding line 206 directly communicates with the first The two radiation patches 203 are connected, as shown in FIG. 2; when the coupled feeding method is adopted, the second feeder line 206 is coupled to the second radiation patch 203.
  • both the first radiation patch 202 and the second radiation patch 203 in the integrated circuit 200 are both illustrated in a direct feeding manner.
  • both the first radiation patch 202 and the second radiation patch 203 can use any one of two feeding methods for feeding.
  • a schematic structural diagram of the integrated circuit 200 may be shown in FIG. 5.
  • the first feed line 205 is not directly connected to the first radiation patch 202, and a platform extending from the end of the first feed line 205 away from the first feed point may be connected to the first radiation patch 202.
  • Resonance is formed so as to feed the first radiation patch 202 through the first feed line 205; similarly, the second feed line 206 is not directly connected to the second radiation patch 203, and the second feed line 206 is far from the second feed
  • a platform extends at one end of the electrical point, and the platform and the second radiation patch 203 can form a resonance, so that the second radiation patch 203 is fed through the second feeder line 206.
  • the coupling degree of the first radiation patch 202 and the first feed line 205 can be changed by adjusting the first size of the first radiation patch 202, and then the frequency range of the first frequency band can be adjusted.
  • the first radiation patch 202 and the first radiation patch 205 are adjusted by adjusting parameters such as the size and shape of the first feeder 205 (for example, the size and shape of the platform extending from the end of the first feeder 205 far from the first feed point in FIG. 5).
  • the degree of coupling of the first feeder 205 further adjusts the frequency range of the first frequency band.
  • the frequency range of the second frequency band can be adjusted by adjusting the second size of the second radiation patch 203, and parameters such as the size and shape of the second feeding line 206 (such as adjustment The size and shape of the platform extending from the end of the second feed line 206 far from the second feed point in FIG. 5) to adjust the frequency range of the second frequency band.
  • the coupling feeding method can reduce the punching in the integrated circuit 200.
  • the coupling feeding method can be used to adjust the frequency band. It can increase the electrical performance of the integrated circuit 200.
  • the specific structure and materials of the carrier structure 201 are not limited. As long as the bearing structure 201 can play a bearing role.
  • the supporting structure 201 may be composed of stacked dielectric layers.
  • the material of the dielectric layer includes, but is not limited to, organic resin, polytetrafluoroethylene, and a polytetrafluoroethylene composite material containing glass fiber cloth.
  • the supporting structure 201 may also be composed of alternately stacked dielectric layers and metal layers.
  • the material of the dielectric layer includes, but is not limited to, organic resin, polytetrafluoroethylene, and a polytetrafluoroethylene composite material containing glass fiber cloth.
  • the material of the metal layer includes, but is not limited to, copper and tin.
  • the supporting structure 201 may also be composed of alternately stacked dielectric layers and metal ball structures.
  • the material of the dielectric layer includes, but is not limited to, organic resin, polytetrafluoroethylene, and a polytetrafluoroethylene composite material containing glass fiber cloth.
  • the material of the metal ball structure includes, but is not limited to, copper and tin.
  • the metal ball structure can be regarded as a plurality of metal balls stacked on the dielectric layer, wherein a gap exists between the plurality of metal balls sandwiched between the two dielectric layers. That is, in this example, a void exists in the bearing structure 201.
  • the supporting structure 201 may also be composed of alternately stacked dielectric layers and metal pillar structures.
  • the material of the dielectric layer includes, but is not limited to, organic resin, polytetrafluoroethylene, and a polytetrafluoroethylene composite material containing glass fiber cloth.
  • the material of the metal pillar structure includes, but is not limited to, copper and tin.
  • the metal pillar structure can be regarded as a plurality of metal pillars stacked on the dielectric layer, wherein a gap exists between the plurality of metal pillars sandwiched between the two dielectric layers. That is, in this example, a void exists in the bearing structure 201.
  • the load-bearing structure 201 may also be composed of alternating plastic ball structures and metal layers.
  • the material of the metal layer includes, but is not limited to, copper, tin, and the like.
  • the plastic ball structure can be considered as a plurality of plastic balls stacked on a metal layer, wherein a gap exists between the plurality of plastic balls sandwiched between two metal layers. That is, in this example, a void exists in the bearing structure 201.
  • the carrier structure 201 is only formed by stacking dielectrics
  • two materials such as metal and dielectric, metal and plastic
  • the packaging process is more complicated, it can be an integrated circuit. 200 brings better electrical performance.
  • the first radiation patch 202 and the second radiation patch 203 may be parallel to each other, and the centers of the first radiation patch 202 and the second radiation patch 203 are aligned.
  • the centers of the first radiation patch 202 and the second radiation patch 203 are aligned, that is, the connection between the center of the first radiation patch 202 and the center of the second radiation patch 203 and the first radiation.
  • the patch 202 is approximately vertical.
  • the schematic structural diagram of the integrated circuit 200 can be shown in FIG. 6.
  • the pattern of the relative field strength of the radiation field at a certain distance from the integrated circuit 200 as a function of direction is symmetrical.
  • the pattern is symmetrical, so the integrated circuit 200 can obtain better performance.
  • the carrier structure 201 may include a first carrier structure for carrying the first radiation patch 201 and a second carrier structure for carrying the second radiation patch 203.
  • the bearing structure 201 may further include a ground layer.
  • the ground layer is provided with an opening through which the first feed line 205 and the second feed line 206 pass.
  • the opening is a first radiation patch 202 and a second radiation patch 203, respectively. Feed.
  • the ground layer can be regarded as a reference ground for the integrated circuit 200.
  • the first radiation patch 202 may be located between the second radiation patch 203 and the ground layer. Based on this implementation, a schematic structural diagram of the integrated circuit 200 can be shown in FIG. 7.
  • the ground layer can be used as a reference ground for the first radiation patch 202, and the first radiation patch 202 can be used as a reference ground for the second radiation patch 203.
  • the integrated circuit 200 in the embodiment of the present application may further include a plurality of metal pillars, and one end of each of the plurality of metal pillars is connected to the ground plane. The other end is connected to the first radiation patch 202, a plurality of metal posts form a surrounding circle around the first radiation patch 202, and the second feeder line 206 passes through the surrounding circle.
  • each of the plurality of metal pillars is connected to the ground layer and the other end is connected to the first radiation patch 202, that is, each metal pillar is placed between the first radiation patch 202 and the ground layer.
  • the surrounding circle formed by multiple metal pillars can be understood as the surrounding circle formed by the projection of multiple metal pillars in space. That is to say, the surrounding circle formed by the plurality of metal pillars around the first radiation patch 202 does not represent the actual inclusion relationship (that is, it does not mean that the first radiation patch 202 is placed in the middle of the plurality of metal pillars), but represents the spatial projection. (That is, the first radiation patch 202 is placed in a surrounding circle formed by the projection of a plurality of metal pillars in space).
  • the surrounding circle formed by the plurality of metal pillars around the first radiation patch 202 can be understood as the surrounding circle formed by the plurality of metal pillars around the center (or the vertical line) of the first radiation patch 202. That is, the first radiation patch 202 may be placed in whole or in part in a surrounding circle formed by the projection of a plurality of metal pillars in space. In an optional embodiment of the present application, the projection of the plurality of metal pillars may pass through the first radiation patch 202, and the plurality of metal pillars forming a surrounding circle around the first radiation patch 202 may be understood as the multiple A plurality of metal pillars form a surrounding circle around a part of the first radiation patch 202.
  • the first power feed line 205 is located outside the surrounding circle formed by the plurality of metal pillars.
  • the multiple metal pillars have the following three functions:
  • the surrounding circle formed by multiple metal pillars can be regarded as the potential zero area of the first radiation patch 202.
  • the second feeder line 206 is arranged in the surrounding circle formed by multiple metal pillars, that is, the second feeder line 206 is arranged at the first The potential zero region of the radiation patch 202. Therefore, by adopting the foregoing implementation manner, the feeding path of the second radiation patch 203 and the feeding path of the first radiation patch 202 can be isolated, thereby improving the isolation between the first frequency band signal and the second frequency band signal.
  • the second feed line 206 passes through the window on the first radiation patch 202 to feed the second radiation patch 203
  • the second feed line 206 passes through the window on the first radiation patch 202
  • the first The two-band signal will also cause interference to the first-band signal.
  • the window of the first radiation patch 202 is located in the potential zero region of the first radiation patch 202, and the first window no longer radiates the first Frequency band signals. Therefore, using the above scheme can reduce interference between the first frequency band signals and the second frequency band signals.
  • the ground layer can be used as the reference ground of the first radiation patch 202, and the first radiation patch 202 can be used as the reference ground of the second radiation patch 203.
  • the beam width of the first frequency band signal can be changed by adjusting parameters such as the shape and size of the ground layer. After setting a plurality of metal pillars, the beam width of the signal in the second frequency band can be changed by adjusting parameters such as the shape and the perimeter of the surrounding circle formed by the plurality of metal pillars.
  • a top view of the integrated circuit 200 may be as shown in FIG. 8.
  • a plurality of metal posts form a square enclosing circle, and the second feeder line 206 is located in the square enclosing circle.
  • the shape of the surrounding circle formed by the plurality of metal pillars is not specifically limited.
  • the enclosing circle may be a square, a rectangle, a circle, or the like. In FIG. 8, only a square is taken as a specific example. In actual implementation, the shape of the enclosing circle is not limited to a square.
  • the dual-frequency communication can be implemented by using the integrated circuit 200 and the isolation between the two frequency bands is high.
  • the integrated circuit 200 may also be designed as a dual-polarized antenna. That is, the first radiation patch 202 can simultaneously receive / transmit signals in the first frequency band in two polarization directions, and the second radiation patch 203 can simultaneously receive / transmit signals in the second frequency band in two polarization directions.
  • the first feeder 205 may include a first vertical feeder and a first horizontal feeder, so that the integrated circuit 200 generates dual-polarized radiation in the first frequency band;
  • the second feeder 206 may include a second vertical feeder And a second horizontal feeder so that the integrated circuit 200 generates dual-polarized radiation in the second frequency band. That is, the first feeder line 205 can generate vertically polarized radiation and horizontally polarized radiation in the first frequency band, and the second feeder line 206 can also generate vertically polarized radiation and horizontally polarized radiation in the second frequency band.
  • the first radiation patch 202 may include two feeding points respectively corresponding to the first vertical feeder line and the first horizontal feeder line
  • the second radiation patch 203 may also contain Two feeding points respectively corresponding to the second vertical feeder and the second horizontal feeder.
  • the feed points in two different polarization directions corresponding to a frequency band can meet the characteristics of circular polarization, that is, the polarization is centered on the first radiation patch 202 (or the second radiation patch 203 as the center).
  • the polarization directions of the two feed points on the first radiation patch 202 are different by 90 °
  • the polarization directions of the two feed points on the second radiation patch 203 are different.
  • 90 ° and the difference between the polarization directions of any feed point on the first radiation patch 202 and two feed points on the second radiation patch 203 is 90 ° and 180 °, respectively.
  • the top view of the integrated circuit 200 may be as shown in FIG. 9.
  • FIG. 9 in order to illustrate the positions of the two feeding points on the first radiation patch 202 and the two feeding points on the second radiation patch 203, it is illustrated in a manner of establishing a coordinate system: if the second radiation The center of the patch 203 (or the center of the first radiation patch 202) is the origin, the horizontal axis along the first radiation patch 202 is the horizontal axis, and the vertical direction along the second radiation patch 203 is the vertical axis.
  • the first horizontal feeder, the first vertical feeder, the second horizontal feeder, and the second vertical feeder are located on the -x axis, -y axis, and + x axis of the coordinate system, respectively And + y axis.
  • the second feeder line 206 includes a second vertical feeder line and a second horizontal feeder line
  • the integrated circuit 200 further includes a plurality of metal posts
  • the second vertical feeder line and the second horizontal feeder line They may all be located in a surrounding circle formed by a plurality of metal pillars.
  • the second vertical feeder line and the second horizontal feeder line are both located in the potential zero region of the first radiation patch 202, which can not only improve the difference between the second frequency band signal and the first frequency band signal in the two polarization directions, respectively.
  • the degree of isolation can also improve the degree of isolation between the second frequency band signal in the horizontal polarization direction and the second frequency band signal in the vertical polarization direction to a certain extent.
  • the first feeder 205 includes a first vertical feeder and a first horizontal feeder
  • the second feeder 206 includes a second vertical feeder.
  • the first vertical feeder, the first horizontal feeder, the second vertical feeder, and the second horizontal feeder can pass through four solder bumps and the RF processing chip 204 respectively.
  • Internal circuits (such as the first radio frequency line and the second radio frequency line) are connected.
  • the connection point between the first vertical feed line and the solder bump may be referred to as a first vertical feed point or the first vertical feed point, and the connection point between the first horizontal feed line and the solder bump may be referred to as a first horizontal feed.
  • connection point between the second vertical feed line and the solder bump can be called the second vertical feed point or the second vertical feed point
  • the connection point between the second horizontal feed line and the solder bump can be called Is the second horizontal feed point or the second horizontal feed point
  • the dual-polarized antenna has the characteristics of dual-channel communication in the same frequency band, the duplex operation can be achieved through the dual-polarized antenna, thereby increasing the communication capacity, the system sensitivity, and the anti-multipath effect of the system.
  • a first slot may be provided on the first radiation patch 202, and the first vertical feeder And the first horizontal feeder are respectively located on both sides of the first slot.
  • the shape and size of the first slot are not specifically limited, as long as the first slot can be used to isolate two feeding points on the first radiation patch.
  • the first slot may be a T-shaped slot.
  • the vertical portion of the first slot may be perpendicular to a line connecting the first vertical polarization feed point and the first horizontal polarization feed point.
  • the first slot can to some extent isolate the first frequency band signal transmitted in the first vertical feeder and the first frequency band signal transmitted in the first horizontal feeder, so as to improve the first frequency band signals in the two polarization directions.
  • the effect of isolation Therefore, in order to achieve different degrees of isolation, the width and length of the first slot can be adjusted accordingly.
  • the structure of the first radiation patch 202 may be as shown in FIG. Taking the integrated circuit 200 shown in FIG. 9 as an example, after the first T-slot is provided on the first radiation patch 202, the integrated circuit 200 in FIG. 9 can be shown in FIG.
  • a second slot may be provided on the second radiation patch, and the second vertical feeder line and the second horizontal feeder line are respectively located at Second slotted sides.
  • the second slotting refer to the related description of the first slotting, and details are not described herein again.
  • the first radiation patch 202 and the second radiation patch 203 are placed on different layers of the carrier structure 201 and can be used to receive / send different frequency bands (that is, the first One frequency band and the second frequency band), so the integrated circuit 200 can achieve dual frequency operation.
  • the first radiation patch 202 and the second radiation patch 203 are respectively fed through different feeder lines (ie, the first feeder line 205 and the second feeder line 206), so the first radiation patch 202
  • the degree of coupling with the second radiation patch 203 is small, and the frequency range of the first frequency band corresponding to the first radiation patch 202 and the frequency range of the second frequency band corresponding to the second radiation patch 203 can be adjusted separately.
  • the first frequency band can be adjusted by adjusting the first size
  • the second frequency band can be adjusted by adjusting the second size.
  • the first radiation patch 202 and the first The degree of coupling between a feed line 205 can be adjusted to the first frequency band, and the degree of coupling between the second radiation patch 203 and the second feed line 206 can be adjusted to adjust the second frequency band. Therefore, the design flexibility of the integrated circuit 200 is higher, and the tunability of the two frequency bands is higher, which can meet different usage requirements.
  • the second radiation patch can also be tuned by setting a tunable capacitor or switch on the second radiation patch 203 (that is, adjusting the frequency range of the second frequency band): the second radiation patch 203 Divided into two parts (hereinafter referred to as the first part and the second part), the first part is connected to the second part through a tunable capacitor or switch, and the second frequency band can be adjusted by adjusting the capacitance of the tunable capacitor or the on-off state of the switch. Perform tuning.
  • the second radiation patch 203 is divided into two parts, and the first part is connected to the second part through four tunable capacitors. Frequency band for tuning.
  • the first frequency band may be tuned by setting a tunable capacitor or switch on the first radiation patch 202.
  • the specific manner is similar to the above-mentioned manner of tuning the second frequency band, and details are not described herein again.
  • the integrated circuit 200 shown in FIG. 2 can also be fixed on a printed circuit board (PCB), wherein the bearing structure 201 is connected to the PCB through a ball grid array (BGA).
  • PCB printed circuit board
  • BGA ball grid array
  • an embodiment of the present application further provides an electronic device loaded with a packaged antenna integrated circuit.
  • the sealed electronic device includes: an upper radiation patch 1, a lower radiation patch 2, a lower radiation patch window 3, a metallization connection hole 4, a solder bump 5, and a solder ball ) (Also known as BGA sphere) 6, reference ground 7, low frequency vertical polarization feed point 8, low frequency horizontal polarization feed point 9, high frequency horizontal polarization feed point 10, high frequency vertical polarization feed Point 11, radio frequency processing chip 13, and printed circuit board (PCB) 14.
  • BGA sphere Also known as BGA sphere
  • PCB printed circuit board
  • the upper radiation patch 1 has a first size corresponding to a high frequency band (for example, a 39 GHz frequency band), and the lower radiation patch 2 has a second size corresponding to a low frequency band (for example, a 28 GHz frequency band).
  • the upper radiation patch 1 feeds directly through the high-frequency horizontal polarization feed point 10 and the high-frequency vertical polarization feed point 11 through the lower radiation patch window 3, and the lower radiation patch 2 feeds through low-frequency vertical polarization.
  • the electric point 8 and the low-frequency horizontally polarized feed point 9 feed directly.
  • One end of the metallization connection hole 4 is connected to the reference ground, and the other end is connected to the lower radiation patch 2, and a plurality of metallization connection holes 4 form a square encircling circle around the center of the upper radiation patch 1, and the high-frequency horizontal polarization feed point 10 and the high-frequency vertical polarization feed point 11 are both located within the envelope.
  • Low frequency vertical polarization feed point 8, low frequency horizontal polarization feed point 9, high frequency horizontal polarization feed point 10 and high frequency vertical polarization feed point 11 pass through four solder bumps 5 and RF processing chip 13 respectively
  • the reference ground 7 is connected to the PCB through the solder ball 6.
  • the electronic device shown in FIG. 13 further includes a T-shaped slot 12 provided on the lower radiation patch 2.
  • the low-frequency vertical polarization feed point 8 and the low-frequency horizontal polarization feed point 9 are respectively located at two positions of the T-shaped slot 12.
  • the T-slot 12 can be used to improve the isolation between the low frequency band transmitted in the low frequency vertical polarization feed point 8 and the low frequency band signal transmitted in the low frequency horizontal polarization feed point 9.
  • the supporting structure for carrying the upper radiation patch 1 and the lower radiation patch 2 is not specifically limited, and the supporting structure is not shown in FIG. 13.
  • the upper radiation patch 1 can be regarded as a specific example of the foregoing second radiation patch 203
  • the lower radiation patch 2 can be regarded as a specific example of the foregoing first radiation patch 202.
  • the metal The connection hole 4 can be regarded as a specific example of the aforementioned metal pillar
  • the reference ground 7 can be regarded as a specific example of the aforementioned ground layer
  • the low-frequency vertical polarization feed point 8 can be regarded as a specific example of the aforementioned first vertical feeder
  • the low-frequency horizontally-polarized feed point 9 can be regarded as a specific example of the aforementioned first horizontal feeder
  • the high-frequency horizontally-polarized feed point 10 can be regarded as a specific example of the aforementioned second horizontal feeder.
  • the feeding point 11 can be regarded as a specific example of the aforementioned second vertical feed line
  • the T-shaped slot 12 can be regarded as a specific example of the aforementioned first T-shaped slot.
  • part of the electronic device shown in FIG. 13 other than the BGA ball and the PCB can be regarded as a specific example of the integrated circuit 200 described above.
  • part of the electronic device shown in FIG. 13 other than the BGA ball and the PCB can be regarded as a specific example of the integrated circuit 200 described above.
  • technical effects refer to related descriptions in the integrated circuit 200.
  • FIG. 14 a simulation result of the return loss of the electronic device shown in FIG. 13 is shown.
  • the abscissa represents the frequency, and the unit is GHz.
  • the ordinate represents the return loss, and the unit is dB.
  • the return loss of the electronic device shown in FIG. 13 at the lowest frequency point (m3) and the highest frequency point (m4) in the high-frequency band (39GHz band) is about -10dB; in the low-frequency band (
  • the return loss of the lowest frequency point (m1) and the highest frequency point (m2) of the 28GHz band is also about -10dB, so the signal loss is low in both the high frequency band and the low frequency band, and the electronic device covers well.
  • the two bands are the high frequency band and the low frequency band.
  • FIG. 15 a simulation result of the isolation between the high-frequency band and the low-frequency band of the electronic device shown in FIG. 13, wherein the abscissa represents the frequency in GHz and the ordinate represents the isolation in dB.
  • the curve containing m1 and m2 represents the isolation between the high-frequency vertical polarization direction and the low-frequency horizontal polarization direction
  • the curve containing m3 and m4 represents the isolation between the high-frequency horizontal polarization direction and the low-frequency vertical polarization direction. It can be seen from the two curves in FIG.
  • the isolation between the high-frequency signal and the low-frequency signal is better than -20dB, the isolation between the two frequency bands is high, and the interaction between the two frequency bands is small.
  • FIG. 16 a simulation result of the isolation of signals in two polarization directions in the electronic device shown in FIG. 13, wherein the abscissa represents the frequency and the unit is GHz; the ordinate represents the isolation and the unit is dB. Among them, the lowest frequency point of the low frequency band is m1, the highest frequency point of the low frequency band is m2; the lowest frequency point of the high frequency band is m3, and the highest frequency point of the high frequency band is m4.
  • the first radiation patch 202 carried by the carrier structure 201 has a first size corresponding to a first frequency band signal
  • the second radiation patch 203 carried by the carrier structure 201 has a frequency corresponding to a second frequency band signal. Second size.
  • the first radiation patch 202 is directly fed through a first vertical feeder and a first horizontal feeder
  • the second radiation patch 203 is coupled and fed through a second vertical feeder and a second horizontal feeder.
  • the metal pillar is connected to the ground layer, and the other end is connected to the first radiation patch 202, and a plurality of metal pillars form a square encircling circle around the center of the second radiation patch 203. Both the first vertical feeder and the first horizontal feeder Located within this encirclement.
  • the first radiation patch 202 further includes a first T-shaped slot.
  • an embodiment of the present application further provides a terminal device, where the terminal device includes the integrated circuit 200 described above.
  • the terminal device may further include a PCB, and the PCB is connected to the bearing structure 201 in the integrated circuit 200 through the BGA.
  • the terminal device includes, but is not limited to, a smart phone, a smart watch, a tablet computer, a VR device, an AR device, a personal computer, a handheld computer, and a personal digital assistant.

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Abstract

本申请实施例公开了一种集成电路和终端设备，用以解决现有的双频天线存在的低频频段的范围较小、难以满足使用需求的问题。天线包括：承载结构、第一辐射贴片、第二辐射贴片以及射频处理芯片，第一辐射贴片、第二幅射贴片和射频处理芯片分别被放置于承载结构的不同层上，该承载结构中设置有第一馈电线以及第二馈电线，射频处理芯片通过第一馈电线向第一辐射贴片馈电，射频处理芯片通过第二馈电线向第二辐射贴片馈电。

Description

一种集成电路和终端设备 技术领域
本申请涉及移动通信技术领域，尤其涉及一种集成电路和终端设备。
背景技术
随着通信技术的发展，通信系统对带宽、时延、传输路径损耗等要求越来越高，封装天线(antenna in package，AIP)应用而生。与现有的贴片天线相比，封装天线具有馈电路径极短、集成度高、体积小、加工精度高等特点，可以使得封装天线获得较佳的电学性能，且易于集成在终端设备中。
例如，在3G或4G系统中，智能手机中通常采用贴片天线。而在5G通信系统中，为了实现波束赋形(beamforming)，通常采用封装天线。通过调节天线阵列中每个封装天线(即阵元)的幅相比，可以实现不同方向的波束扫描。
一种可实现双频通信的毫米波天线的封装结构可以如图1所示。在图1所示的封装天线中，高频辐射贴片通过馈电点直接馈电，产生高频频率响应；低频辐射贴片与高频辐射贴片耦合，产生低频频率响应，从而实现双频工作。
在图1所示的封装天线中，低频频率响应需要通过两个辐射贴片的耦合实现。具体实现时，当确定该封装天线工作的高频频段后，高频辐射贴片的尺寸即可确定；此外，根据天线的封装要求，两个辐射贴片的间距的变化范围也有固定要求。那么，在高频辐射贴片的尺寸以及两个辐射贴片的间距的变化范围均固定的情况下，两个辐射贴片的耦合程度即为在一定变化范围内的确定值，进而低频频率响应的频段也只能在相对固定的范围内变化。也就是说，采用图1所示的封装天线，可以使用的低频频段的范围较小，难以满足不同的使用需求。
综上，现有技术中提供的实现双频通信的封装天线中，存在低频频段的范围较小、难以满足使用需求的问题。
发明内容
本申请实施例提供一种集成电路和终端设备，用以解决现有的双频天线存在的低频频段的范围较小、难以满足使用需求的问题。
第一方面，本申请实施例提供一种应用于终端设备的集成电路，该集成电路包括：承载结构、第一辐射贴片、第二辐射贴片以及射频处理芯片，第一辐射贴片、第二幅射贴片和射频处理芯片分别被放置于承载结构的不同层上，承载结构中设置有第一馈电线以及第二馈电线，射频处理芯片通过第一馈电线向第一辐射贴片馈电，射频处理芯片通过第二馈电线向第二辐射贴片馈电。
其中，该集成电路可以视为AIP集成电路。封装天线集成电路具有馈电路径极短、集成度高、体积小、加工精度高等特点，可以使得封装天线获得较佳的电学性能。且在5G通信系统及未来通信系统中可以广泛应用。该集成电路可作为天线阵列中的一个阵元，也可以作为独立的封装天线使用。
此外，在第一方面提供的集成电路中，射频处理芯片可通过焊锡凸块分别与第一馈电 线和第二馈电线连接。
第一方面提供的集成电路中，第一辐射贴片和第二辐射贴片置于承载结构的不同层上，可分别用于接收/发送不同频段(以下称为第一频段和第二频段)的信号，因而该集成电路可实现双频工作。
此外，第一方面提供的集成电路中，第一辐射贴片和第二辐射贴片分别通过不同的馈电线(即第一馈电线和第二馈电线)馈电，因而第一辐射贴片和第二辐射贴片的耦合度较小，第一辐射贴片对应的第一频段的频率范围和第二辐射贴片对应的第二频段的频率范围可以实现分别可调。比如，可通过调整第一尺寸实现对第一频段的调整，通过调整第二尺寸实现对第二频段的调整；再比如，采用耦合馈电方式时，可通过调整第一辐射贴片和第一馈电线之间的耦合程度实现对第一频段的调整，可通过调整第二辐射贴片和第二馈电线之间的耦合程度实现对第二频段的调整。因此，该集成电路的设计灵活性更高，两个频段的可调谐程度较高，可以满足不同的使用需求。
在一种可能的设计中，第一辐射贴片具有对应第一频段信号的第一尺寸，第二辐射贴片具有对应第二频段信号的第二尺寸。
采用上述方案，可通过调整第一尺寸实现对第一频段的调整，通过调整第二尺寸实现对第二频段的调整。
在一种可能的设计中，射频处理芯片中设有对应第一频段信号的第一射频线路以及对应第二频段信号的第二射频线路，第一馈电线与第一射频线路连接，第二馈电线与第二射频线路连接。
具体地，第一辐射贴片可通过第一馈电线与第一射频线路连接，实现将接收到的第一频段信号传输至第一射频线路进行处理，或者实现将第一射频线路输出的第一频段信号通过第一辐射贴片发送；第二辐射贴片可通过第二馈电线与第二射频线路连接，实现将接收到的第二频段信号传输至第二射频线路进行处理，或者实现将第二射频线路输出的第二频段信号通过第二辐射贴片发送。
在一种可能的设计中，承载结构包括第一承载结构和第二承载结构，第一承载结构用于承载第一辐射贴片，第二承载结构用于承载第二辐射贴片。
此外，该集成电路中的承载结构中还可包括接地层，该接地层上设置有开口，第一馈电线和第二馈电线穿过该开口分别向第一辐射贴片和第二辐射贴片馈电。
进一步地，第一辐射贴片可处于第二辐射贴片和该接地层之间。采用上述方案，接地层可以作为第一辐射贴片的参考地，而第一辐射贴片可以作为第二辐射贴片的参考地。
此外，当第一辐射贴片处于第二辐射贴片和该接地层之间时，第一辐射贴片上可设有开窗，第二馈电线穿过第一辐射贴片上的开窗向第二辐射贴片馈电。
为了进一步提高第一频段和第二频段之间的隔离度，第一方面提供的集成电路中还可包括多个金属柱，多个金属柱中的每个金属柱的一端与接地层相连，另一端与第一辐射贴片相连，多个金属柱围绕第一辐射贴片形成包围圈，第二馈电线穿过该包围圈。
其中，多个金属柱形成的包围圈可以理解为多个金属柱在空间中的投影所形成的包围圈。多个金属柱围绕第一辐射贴片形成包围圈，一种可能的实现方式是：多个金属柱围绕第一辐射贴片的中心(或中垂线)形成包围圈。第一馈电线可位于上述多个金属柱形成的包围圈之外。
此外，本申请实施例中对多个金属柱形成的包围圈的形状不做具体限定。例如，该包 围圈可以是正方形、长方形、圆形等。
采用上述方案，多个金属柱形成的包围圈可以视为第一辐射贴片的电位零点区域，将第二馈电线设置在多个金属柱形成的包围圈内，即将第二馈电线设置在第一辐射贴片的电位零点区域。因而，采用上述方案可以将第二辐射贴片的馈电路径与第一辐射贴片的馈电路径隔离，从而提高第一频段信号与第二频段信号之间的隔离度。
此外，当第二馈电线穿过第一辐射贴片上的开窗为第二辐射贴片馈电时，第二馈电线在经过第一辐射贴片的开窗时，第二频段信号也会对第一频段信号造成干扰；通过设置多个金属柱，第一辐射贴片的开窗处于第一辐射贴片的电位零点区域，该开窗处不再辐射第一频段信号，因而采用上述方案可以减小第一频段信号和第二频段信号间的干扰。
在一种可能的设计中，第一馈电线可以包括第一垂直馈电线和第一水平馈电线，第二馈电线可以包括第二垂直馈电线和第二水平馈电线。
相应地，第一辐射贴片上包含分别与第一垂直馈电线和第一水平馈电线对应的两个馈电点，第二辐射贴片上包含分别与第二垂直馈电线和第二水平馈电线对应的两个馈电点。
具体地，对于第一辐射贴片上的两个馈电点的位置以及第二辐射贴片上的两个馈电的位置，可以设定如下：第一辐射贴片上的两个馈电点的极化方向相差90°，第二辐射贴片上的两个馈电点的极化方向相差90°，第一辐射贴片上的任一馈电点与第二辐射贴片上的两个馈电点的极化方向之差分别为90°和180°。
采用上述方案，通过该集成电路可在第一频段产生(水平极化方向和垂直极化方向的)双极化辐射，且在第二频段也产生(水平极化方向和垂直极化方向的)双极化辐射。也就是说，采用上述方案可以使得该集成电路实现双极化。由于双极化天线具有同频段的双通道通信的特点，因而通过双极化天线可以实现双工操作，从而提高通信容量、提高系统灵敏度、增强系统的抗多径效应。
此外，为了进一步提高第一垂直馈电线和第一水平馈电线中传输的第一频段信号之间的隔离度，还可以在第一辐射贴片上设置第一开槽，第一垂直馈电线和第一水平馈电线分别位于第一开槽的两侧。
第一开槽可以在一定程度上隔离第一垂直馈电线中传输的第一频段信号和第一水平馈电线中传输的第一频段信号，从而达到提高两个极化方向上的第一频段信号之间的隔离度的效果。
同样地，为了进一步提高第二垂直馈电线和第二水平馈电线中传输的第二频段信号之间的隔离度，还可以在第二辐射贴片上设置第二开槽，第二垂直馈电线和第二水平馈电线分别位于第二开槽的两侧。
第二开槽可以在一定程度上隔离第二垂直馈电线中传输的第二频段信号和第二水平馈电线中传输的第二频段信号，从而达到提高两个极化方向上的第二频段信号之间的隔离度的效果。
需要说明的是，本申请实施中对第一开槽和第二开槽的形状和尺寸不做具体限定，只要第一开槽可用于隔离第一辐射贴片上的两个馈电点即可，第二开槽可用于隔离第二辐射贴片上的两个馈电点即可。示例性地，第一开槽和第二开槽可均为T型开槽。
在一种可能的设计中，第一辐射贴片和第二辐射贴片相互平行，且第一辐射贴片与第二辐射贴片中心对正。
其中，第一辐射贴片和第二辐射贴片的中心对正可以理解为：第一辐射贴片的中心与 第二辐射贴片的中心的连线与第一辐射贴片近似垂直。当第一辐射贴片和第二辐射贴片平行且中心对正时，距离该集成电路一定距离处的辐射场的相对场强随方向变化的图形是对称的，即该集成电路的方向图是对称的，因而该集成电路可以获得较好的性能。
在一种可能的设计中，第一辐射贴片分为第一部分和第二部分，第一辐射贴片的第一部分和第一辐射贴片的第二部分通过可调谐电容或开关单元连接。
采用上述方案，通过调节可调谐电容的电容值或控制开关单元的通断，来调节第一频段的频率范围。
同样地，第二辐射贴片也分为第一部分和第二部分，第二辐射贴片的第一部分和第二辐射贴片的第二部分通过可调谐电容或开关单元连接。
此外，本申请实施例中对承载结构的具体结构和材料等均不做限定。例如，承载结构可以包括：层叠的介质层；或者，交替层叠的介质层和金属层；或者，交替层叠的介质层和金属球结构；或者，交替层叠的介质层和金属柱结构；或者，交替层叠的塑料球结构和金属层。
与承载结构仅由介质层叠置形成的方案相比，采用两种材质(例如金属与介质、金属与塑料)交替叠置形成承载结构，虽然在封装工艺上复杂一些，但是可以为第一方面提供的集成电路带来较好的电学性能。
其中，金属球结构中可以包括多个金属球；金属柱结构中可以包括多个金属柱；塑料球结构中可以包括多个塑料球。
其中，介质层的材料包括但不限于有机树脂、聚四氟乙烯、含有玻纤布的聚四氟乙烯复合材料；金属层的材料包括但不限于铜和锡；金属柱结构的材料包括但不限于铜和锡；金属球结构的材料包括但不限于铜和锡。
第二方面，本申请实施例提供一种终端设备，该终端设备包括第一方面或其任一种可能的设计中提供的集成电路。
在一种可能的设计中，第二方面提供的终端设备中还可以包括：印刷电路板PCB，集成电路中的承载结构通过球栅阵列BGA与该PCB连接。
具体地，该终端设备包括但不限于智能手机、智能手表、平板电脑、虚拟现实(virtual reality，VR)设备、增强现实(augmented reality，AR)设备、个人计算机、手持式计算机、个人数字助理。
附图说明
图1为现有技术提供的一种双频天线的结构示意图；
图2为本申请实施例提供的第一种集成电路的结构示意图；
图3为本申请实施例提供的一种第一馈电线、第二馈电线与射频处理芯片的连接示意图；
图4为本申请实施例提供的第二种的结构示意图；
图5为本申请实施例提供的第三种集成电路的结构示意图；
图6为本申请实施例提供的第四种集成电路的结构示意图；
图7为本申请实施例提供的第五种集成电路的结构示意图；
图8为本申请实施例提供的第六种集成电路的结构示意图；
图9为本申请实施例提供的第七种集成电路的结构示意图；
图10为本申请实施例提供的一种第一辐射贴片的结构示意图；
图11为本申请实施例提供的第八种集成电路的结构示意图；
图12为本申请实施例提供的一种第二辐射贴片的结构示意图；
图13为本申请实施例提供一种电子设备的结构示意图；
图14为本申请实施例提供的电子设备的回波损耗的仿真结果示意图；
图15为本申请实施例提供的电子设备的高频频段和低频频段之间的隔离度的仿真结果示意图；
图16为本申请实施例提供的电子设备中两个极化方向上的信号的隔离度的仿真结果示意图；
图17为本申请实施例提供的电子设备的高频增益和低频增益的仿真结果示意图；
图18为本申请实施例提供的第九种集成电路的结构示意图。
具体实施方式
本申请实施例提供一种集成电路和终端设备，用以解决现有的双频天线存在的低频频段的范围较小、难以满足使用需求的问题。
为了使本申请的目的、技术方案和优点更加清楚，下面将结合附图对本申请作进一步地详细描述。需要说明的是，本申请中所涉及的多个，是指两个或两个以上。另外，需要理解的是，在本申请的描述中，“第一”、“第二”等词汇，仅用于区分描述的目的，而不能理解为指示或暗示相对重要性，也不能理解为指示或暗示顺序。
参见图2，为本申请实施例提供的一种集成电路。该集成电路可视为应用于终端设备中的封装天线集成电路(即AIP)，该集成电路可作为天线阵列中的一个阵元，也可以作为独立的封装天线使用。
其中，该终端设备所采用的制式包括但不限于码分多址接入(code division multiple access，CDMA)、带宽码分多址接入(wide-band code division multiple access，WCDMA)、时分同步码分多址(time division-synchronous code division multiple access，TD-SCDMA)、长期演进(long term evolution，LTE)、第五代(5th generation，5G)制式。
该集成电路200包括承载结构201、第一辐射贴片202、第二辐射贴片203以及射频处理芯片204。其中，第一辐射贴片202、第二幅射贴片203和射频处理芯片204分别被放置于承载结构201的不同层上。承载结构201中设置有第一馈电线205以及第二馈电线206，射频处理芯片204通过第一馈电线205向第一辐射贴片202馈电，射频处理芯片204通过第二馈电线206向第二辐射贴片203馈电。具体地，在集成电路200中，承载结构201可以包括第一承载结构和第二承载结构，第一承载结构用于承载第一辐射贴片202，第二承载结构用于承载第二辐射贴片203。
集成电路200中，第一辐射贴片202和第二辐射贴片203置于承载结构201的不同层上，可分别用于接收/发送不同频段(以下称为第一频段和第二频段)的信号，因而该集成电路200作为封装天线使用可实现双频工作。
其中，第一频段和第二频段均可以为5G制式中的毫米波波段。
可选地，在集成电路200中，第一辐射贴片202具有对应第一频段信号的第一尺寸，第二辐射贴片203具有对应第二频段信号的第二尺寸。也就是说，第一辐射帖片202可用于接收/发送第一频段的信号，第二辐射贴片203可用于接收/发送第二频段的信号。因而， 集成电路200可以工作在第一频段和第二频段这两个频段，实现双频工作。
此外，由于第一辐射贴片202和第二辐射贴片203分别通过不同的馈电线(即第一馈电线205和第二馈电线206)馈电，因而第一辐射贴片202和第二辐射贴片203的耦合度较小。实际应用中，可通过调整第一尺寸实现对第一频段的调整，也可以通过调整第二尺寸实现对第二频段的调整，即第一频段和第二频段分别可调，因而集成电路200的设计灵活性较高。在集成电路200中，为了减小两个辐射贴片之间的干扰，通常，位于上层的辐射贴片对应的频段较高，位于下层的辐射贴片对应的频段较低。即，针对图2的示例，第一频段为低频频段，第二频段为高频频段。示例性地，第一频段可以对应28GHz频段，第二频段可以对应39GHz频段。
具体地，集成电路200在实现双频工作时，射频处理芯片204中可设有对应第一频段信号的第一射频线路以及对应第二频段信号的第二射频线路，第一馈电线205与第一射频线路连接，第二馈电线206与第二射频线路连接。
第一辐射贴片202在接收/发送第一频段的信号时，可通过第一馈电线205与射频处理芯片204的第一射频线路连接，从而将接收到的第一频段的信号传输至射频处理芯片204进行处理，或者将射频处理芯片204输出的第一频段的信号通过第一辐射贴片202发送出去；第二辐射贴片203在接收/发送第二频段的信号时，可通过第二馈电线206与射频处理芯片204的第二射频线路连接，从而将接收到的第二频段的信号传输至射频处理芯片204进行处理，或者将射频处理芯片204输出的第二频段的信号通过第二辐射贴片203发送出去。
其中，射频处理芯片204对第一频段信号和第二频段信号的处理过程类似，下面以第一频段信号的处理过程为例举例说明射频处理芯片204的处理过程。
对于第一频段信号的发送过程，射频处理芯片204在接收到上级芯片(例如中频芯片)传输的中频信号后，通过第一射频线路中的混频器对中频信号进行混频操作；然后通过移相器对混频后的信号进行移相操作，以实现波束赋形；再通过放大器对移相器输出的信号进行放大后，将放大器的输出信号作为最终输出的第一频段的射频信号，通过第一馈电线205将这一射频信号传输至第一辐射贴片202并发送出去。
对于第一频段信号的接收过程，第一辐射贴片202在接收到第一频段信号这一射频信号后，可通过第一馈电线205将射频信号传输至射频处理芯片204中的第一射频线路。第一射频线路中可包含放大器、移相器、混频器。通过放大器对射频信号进行放大；然后通过移相器对放大后的信号进行移相操作；再通过混频器对移相器输出的信号进行混频后，第一射频线路将混频器的输出信号作为最终输出的中频信号，并传输至下级芯片(例如中频芯片)。当然，以上处理过程仅为示例。具体实现时，射频处理芯片204的处理过程还可以包括滤波、模数变换、数模变换等操作。这些操作可参照现有技术中的描述，本申请实施例中不再赘述。
具体实现时，第一馈电线205和第二馈电线206可分别通过焊锡凸块(solder bump)与射频处理芯片204连接，例如，第一馈电线205可通过焊锡凸块与对应第一频段信号的第一射频线路连接，第二馈电线206可通过焊锡凸块与对应第二频段信号的第二射频线路连接。示例性地，第一馈电线205和第二馈电线206与射频处理芯片204连接的示意图可以如图3所示。
其中，第一馈电线205与焊锡凸块的连接处可以称为第一馈电点或第一馈点，第一辐 射贴片202从第一馈电点馈入信号，第二馈电线206与焊锡凸块的连接处可以称为第二馈电点或第二馈点，第二辐射贴片203从第二馈电点馈入信号。
需要说明的是，在图2所示的集成电路200中，第一辐射贴片202置于第二辐射贴片203的下方。实际实现时，第一辐射贴片202也可以置于第二辐射贴片203的上方，本申请实施例对第一辐射贴片202和第二辐射贴片203的叠置顺序不做具体限定。此外，在图2所示的集成电路200中，第一辐射贴片202上可设有开窗，第二馈电线206穿过第一辐射贴片202上的开窗为第二辐射贴片203馈电；实际实现时，第一辐射贴片202上也可不设开窗，第二馈电线206可绕过第一辐射贴片202为第二辐射贴片203馈电，如图4所示。为了示意简便，本申请实施例中均以第二馈电线206穿过第一辐射贴片202上的开窗为第二辐射贴片203馈电这一方式进行示意，对图4所示的馈电方式不再做具体说明。
在图2所示的集成电路200中，第一辐射贴片202通过第一馈电线205馈电，第二辐射贴片203通过第二馈电线206馈电。具体地，第一馈电线205可以通过直接馈电的方式为第一辐射贴片202馈电，也可以通过耦合馈电的方式为第一辐射贴片202馈电；采用直接馈电方式时，第一馈电线205直接与第一辐射贴片202连接，如图2所示；采用耦合馈电方式时，第一馈电线205与第一辐射贴片202耦合；同样地，第二馈电线206可以通过直接馈电的方式为第二辐射贴片203馈电，也可以通过耦合馈电的方式为第二辐射贴片203馈电，采用直接馈电方式时，第二馈电线206直接与第二辐射贴片203连接，如图2所示；采用耦合馈电方式时，第二馈电线206与第二辐射贴片203耦合。
需要说明的是，在图2中，集成电路200中的第一辐射贴片202和第二辐射贴片203均以直接馈电的方式示意。实际实现时，第一辐射贴片202和第二辐射贴片203均可采用两种馈电方式中的任一种进行馈电。示例性地，第一辐射贴片202和第二辐射贴片203均采用耦合馈电方式时，集成电路200的结构示意图可以如图5所示。
在图5中，第一馈电线205不直接与第一辐射贴片202连接，第一馈电线205中远离第一馈电点的一端延伸出一个平台，该平台与第一辐射贴片202可形成谐振，从而实现通过第一馈电线205为第一辐射贴片202馈电；同样地，第二馈电线206不直接与第二辐射贴片203连接，第二馈电线206中远离第二馈电点的一端延伸出一个平台，该平台与第二辐射贴片203可形成谐振，从而实现通过第二馈电线206为第二辐射贴片203馈电。
采用耦合馈电方式时，不仅可以通过调整第一辐射贴片202的第一尺寸来改变第一辐射贴片202和第一馈电线205的耦合程度，进而调整第一频段的频率范围，还可以通过调整第一馈电线205的尺寸和形状等参数(例如调整图5中第一馈电线205中远离第一馈电点一端延伸出的平台的尺寸和形状)来调整第一辐射贴片202和第一馈电线205的耦合程度，进而调整第一频段的频率范围。同样地，采用耦合馈电方式时，可以通过调整第二辐射贴片203的第二尺寸来调整第二频段的频率范围，也可以通过调整第二馈电线206的尺寸和形状等参数(例如调整图5中第二馈电线206中远离第二馈电点一端延伸出的平台的尺寸和形状)来调整第二频段的频率范围。
综合考虑上述两种馈电方式，直接馈电设计简单，实现起来也较为方便；采用耦合馈电方式，可以减少集成电路200中的打孔；此外，采用耦合馈电方式，频段的可调更大，可以提高集成电路200的电学性能。
此外，在集成电路200中，对承载结构201的具体结构和材料等均不做限定。只要承载结构201可以起到承载作用即可。
下面给出本申请实施例中的承载结构的几种具体示例：
示例性地，承载结构201可以由层叠的介质层组成。其中，介质层的材料包括但不限于有机树脂、聚四氟乙烯、含有玻纤布的聚四氟乙烯复合材料。
示例性地，承载结构201还可以由交替层叠的介质层和金属层组成。其中，介质层的材料包括但不限于有机树脂、聚四氟乙烯、含有玻纤布的聚四氟乙烯复合材料；金属层的材料包括但不限于铜、锡等。
示例性地，承载结构201还可以由交替层叠的介质层和金属球结构组成。其中，介质层的材料包括但不限于有机树脂、聚四氟乙烯、含有玻纤布的聚四氟乙烯复合材料；金属球结构的材料包括但不限于铜、锡等。在该示例中，金属球结构可以视为叠置在介质层上的多个金属球，其中，夹在两层介质层之间的多个金属球之间存在空隙。也就是说，在该示例中，承载结构201中存在空隙。
示例性地，承载结构201还可以由交替层叠的介质层和金属柱结构组成。其中，介质层的材料包括但不限于有机树脂、聚四氟乙烯、含有玻纤布的聚四氟乙烯复合材料；金属柱结构的材料包括但不限于铜、锡等。在该示例中，金属柱结构可以视为叠置在介质层上的多个金属柱，其中，夹在两层介质层之间的多个金属柱之间存在空隙。也就是说，在该示例中，承载结构201中存在空隙。
示例性地，承载结构201也可以由交替层叠的塑料球结构和金属层组成。其中，金属层的材料包括但不限于铜、锡等。在该示例中，塑料球结构可以视为叠置在金属层上的多个塑料球，其中，夹在两层金属层之间的多个塑料球之间存在空隙。也就是说，在该示例中，承载结构201中存在空隙。
与承载结构201仅由介质层叠置形成的方案相比，采用两种材质(例如金属与介质、金属与塑料)交替叠置形成承载结构201，虽然在封装工艺上复杂一些，但是可以为集成电路200带来较好的电学性能。
在集成电路200中，第一辐射贴片202可以与第二辐射贴片203相互平行，且第一辐射贴片202与第二辐射贴片203中心对正。
在本申请实施例中，第一辐射贴片202和第二辐射贴片203的中心对正，即第一辐射贴片202的中心与第二辐射贴片203的中心的连线与第一辐射贴片202近似垂直。当第一辐射贴片202与第二辐射贴片203平行，且第一辐射贴片202与第二辐射贴片203中心对正时，集成电路200的结构示意图可以如图6所示。
当第一辐射贴片202和第二辐射贴片203平行且中心对正时，距离集成电路200一定距离处的辐射场的相对场强随方向变化的图形是对称的，即该集成电路200的方向图是对称的，因而该集成电路200可以获得较好的性能。
如前所述，承载结构201可包含用于承载第一辐射贴片201的第一承载结构以及用于承载第二辐射贴片203的第二承载结构。此外，承载结构201中还可包含接地层，该接地层上设置有开口，第一馈电线205和第二馈电线206穿过该开口分别为第一辐射贴片202和第二辐射贴片203馈电。其中，接地层可以视为集成电路200的参考地。其中，第一辐射贴片202可以处于第二辐射贴片203和接地层之间。基于这一实现方式，集成电路200的结构示意图可以如图7所示。
在上述实现方式中，接地层可以作为第一辐射贴片202的参考地，而第一辐射贴片202可以作为第二辐射贴片203的参考地。
为了进一步提高第一频段和第二频段之间的隔离度，本申请实施例中的集成电路200还可以包括多个金属柱，多个金属柱中的每个金属柱的一端与接地层相连，另一端与第一辐射贴片202相连，多个金属柱围绕第一辐射贴片202形成包围圈，第二馈电线206穿过该包围圈。
其中，多个金属柱中的每个金属柱的一端与接地层相连、另一端与第一辐射贴片202相连，即每个金属柱均置于第一辐射贴片202和接地层之间的空间中。那么，多个金属柱形成的包围圈可以理解为多个金属柱在空间中的投影所形成的包围圈。也就是说，多个金属柱围绕第一辐射贴片202形成包围圈并不代表真实的包含关系(即并不代表第一辐射贴片202置于多个金属柱中间)，而是表示空间投影上的包含关系(即表示第一辐射贴片202置于多个金属柱在空间中的投影所形成的包围圈中)。
在一种可能的实现方式中，多个金属柱围绕第一辐射贴片202形成的包围圈可以理解为多个金属柱围绕第一辐射贴片202的中心(或中垂线)形成的包围圈。也就是说，第一辐射贴片202可全部或部分置于多个金属柱在空间中的投影所形成的包围圈中。在本申请可选的实施例中，所述多个金属柱的投影可以穿过所述第一辐射贴片202，多个金属柱围绕第一辐射贴片202形成包围圈可以被理解为所述多个金属柱围绕所述第一辐射贴片202的一部分形成包围圈。
可选地，第一馈电线205位于上述多个金属柱形成的包围圈之外。
在上述实现方式中，多个金属柱主要有如下三种作用：
1、多个金属柱形成的包围圈可以视为第一辐射贴片202的电位零点区域，将第二馈电线206设置在多个金属柱形成的包围圈内，即将第二馈电线206设置在第一辐射贴片202的电位零点区域。因而，采用上述实现方式可以将第二辐射贴片203的馈电路径与第一辐射贴片202的馈电路径隔离，从而提高第一频段信号与第二频段信号之间的隔离度。
2、当第二馈电线206穿过第一辐射贴片202上的开窗为第二辐射贴片203馈电时，第二馈电线206在经过第一辐射贴片202的开窗时，第二频段信号也会对第一频段信号造成干扰；通过设置多个金属柱，第一辐射贴片202的开窗处于第一辐射贴片202的电位零点区域，该开窗处不再辐射第一频段信号，因而采用上述方案可以减小第一频段信号和第二频段信号间的干扰。
3、如前所述，本申请实施例中，接地层可以作为第一辐射贴片202的参考地，而第一辐射贴片202可以作为第二辐射贴片203的参考地。通过调整接地层的形状尺寸等参数可以改变第一频段信号的波束宽度。而在设置多个金属柱后，通过调整多个金属柱所形成的包围圈的形状和周长等参数，可以改变第二频段信号的波束宽度。
当集成电路200中包含多个第一金属柱时，集成电路200的俯视图可以如图8所示。图8中，多个金属柱形成方形包围圈，第二馈电线206位于该方形包围圈内。
需要说明的是，图8中为了示意第一辐射贴片202、第二辐射贴片203、第一馈电线205以及第二馈电线206之间的位置关系，采用了透视方式进行示意。实际实现时，集成电路200的俯视图中可能仅能看到第二辐射贴片203以及承载结构201。此外，同样需要说明的是，在本申请实施例中给出的集成电路200的透视图中，为了避免混淆，均未示出射频处理芯片204。
同样需要说明的是，本申请实施例中对多个金属柱形成的包围圈的形状不做具体限定。例如，该包围圈可以是正方形、长方形、圆形等。图8中仅以方形作为一个具体示例， 实际实现时，该包围圈的形状不限于方形。
通过以上描述可以知道，采用集成电路200可以实现双频通信，且两个频段之间的隔离度较高。进一步地，为了提高系统容量，还可以将集成电路200设计成双极化天线。即，第一辐射贴片202可同时接收/发送两个极化方向上的第一频段信号，第二辐射贴片203也可以同时接收/发送两个极化方向上的第二频段信号。
具体实现时，第一馈电线205可以包括第一垂直馈电线和第一水平馈电线，以使得集成电路200在第一频段产生双极化辐射；第二馈电线206可以包括第二垂直馈电线和第二水平馈电线，以使得集成电路200在第二频段产生双极化辐射。也就是说，第一馈电线205可以在第一频段产生垂直极化辐射与水平极化辐射，第二馈电线206也可以在第二频段产生垂直极化辐射和水平极化辐射。
在通过上述方式实现双极化时，第一辐射贴片202上可包含分别与第一垂直馈电线和第一水平馈电线对应的两个馈电点，第二辐射贴片203上也可包含分别与第二垂直馈电线和第二水平馈电线对应的两个馈电点。其中，对应一个频段两个不同极化方向上的馈电点可以满足圆极化特点，即在以第一辐射贴片202为中心(或者以第二辐射贴片203为中心)的、极化方向从0～360°变化的电磁场中，第一辐射贴片202上的两个馈电点的极化方向相差90°，第二辐射贴片203上的两个馈电点的极化方向相差90°，且第一辐射贴片202上的任一馈电点与第二辐射贴片203上的两个馈电点的极化方向之差分别为90°和180°。
示例性地，以图8所示的集成电路200为例，若第一馈电线205包括第一垂直馈电线和第一水平馈电线、第二馈电线206包括第二垂直馈电线和第二水平馈电线，则该集成电路200的俯视图可以如图9所示。图9中，为了示意第一辐射贴片202上的两个馈电点和第二辐射贴片203上的两个馈电点的位置，以建立坐标系的方式进行示意：若以第二辐射贴片203的中心(或第一辐射贴片202的中心)为原点，以沿着第一辐射贴片202的水平方向为横轴、以沿着第二辐射贴片203的垂直方向为纵轴建立该俯视图所在平面的坐标系，则第一水平馈电线、第一垂直馈电线、第二水平馈电线和第二垂直馈电线分别位于该坐标系的-x轴、-y轴、+x轴和+y轴上。
从图9可以看出，若第二馈电线206包括第二垂直馈电线和第二水平馈电线，且集成电路200中还包含多个金属柱，则第二垂直馈电线和第二水平馈电线可以均位于多个金属柱形成的包围圈内。这样的话，第二垂直馈电线和第二水平馈电线均位于第一辐射贴片202的电位零点区域，不仅可以分别提高两个极化方向上的第二频段信号与第一频段信号之间的隔离度，还可以在一定程度上提高水平极化方向上的第二频段信号和垂直极化方向上的第二频段信号之间的隔离度。
与第一馈电线205、第二馈电线206与射频处理芯片204的连接方式类似，第一馈电线205包括第一垂直馈电线和第一水平馈电线、第二馈电线206包括第二垂直馈电线和第二水平馈电线时，第一垂直馈电线、第一水平馈电线、第二垂直馈电线和第二水平馈电线可分别通过四个焊锡凸块(solder bump)与射频处理芯片204的内部电路(例如第一射频线路和第二射频线路)连接。其中，第一垂直馈电线与焊锡凸块的连接处可以称为第一垂直馈电点或第一垂直馈点，第一水平馈电线与焊锡凸块的连接处可以称为第一水平馈电点或第一水平馈点，第二垂直馈电线与焊锡凸块的连接处可以称为第二垂直馈电点或第二垂 直馈点，第二水平馈电线与焊锡凸块的连接处可以称为第二水平馈电点或第二水平馈点。
由于双极化天线具有同频段的双通道通信的特点，因而通过双极化天线可以实现双工操作，从而提高通信容量、提高系统灵敏度、增强系统的抗多径效应。
此外，为了进一步提高第一垂直馈电线和第一水平馈电线中传输的第一频段信号之间的隔离度，还可以在第一辐射贴片202上设置第一开槽，第一垂直馈电线和第一水平馈电线分别位于第一开槽的两侧。
本申请实施例中，对第一开槽的形状和尺寸均不做具体限定，只要第一开槽可用于隔离第一辐射贴片上的两个馈电点即可。示例性地，第一开槽可以为T型开槽。第一开槽的垂直部分可以与第一垂直极化馈电点和所述第一水平极化馈电点的连线垂直。
第一开槽可以在一定程度上隔离第一垂直馈电线中传输的第一频段信号和第一水平馈电线中传输的第一频段信号，从而达到提高两个极化方向上的第一频段信号之间的隔离度的效果。因而，为了达到不同程度的隔离效果，第一开槽的宽度长度等均可以进行相应调节。
在第一辐射贴片202上设置的T型第一开槽后，第一辐射贴片202的结构可以如图10所示。以图9所示的集成电路200为例，在第一辐射贴片202上设置第一T型开槽后，图9中的集成电路200可以如图11所示。
同样地，为了进一步提高两个极化方向上的第二频段信号之间的隔离度，可以在第二辐射贴片上设置第二开槽，第二垂直馈电线和第二水平馈电线分别位于第二开槽的两侧。第二开槽的实现方式可以参考第一开槽的相关描述，此处不再赘述。
综上，在本申请实施例提供的集成电路200中，第一辐射贴片202和第二辐射贴片203置于承载结构201的不同层上，可分别用于接收/发送不同频段(即第一频段和第二频段)的信号，因而该集成电路200可实现双频工作。
此外，集成电路200中，第一辐射贴片202和第二辐射贴片203分别通过不同的馈电线(即第一馈电线205和第二馈电线206)馈电，因而第一辐射贴片202和第二辐射贴片203的耦合度较小，第一辐射贴片202对应的第一频段的频率范围和第二辐射贴片203对应的第二频段的频率范围可以实现分别可调。比如，可通过调整第一尺寸实现对第一频段的调整，通过调整第二尺寸实现对第二频段的调整；再比如，采用耦合馈电方式时，可通过调整第一辐射贴片202和第一馈电线205之间的耦合程度实现对第一频段的调整，可通过调整第二辐射贴片203和第二馈电线206之间的耦合程度实现对第二频段的调整。因此，集成电路200的设计灵活性更高，两个频段的可调谐程度较高，可以满足不同的使用需求。
此外，本申请实施例中，还可以通过在第二辐射贴片203上设置可调谐电容或开关来对第二频段进行调谐(即调节第二频段的频率范围)：将第二辐射贴片203分割为两个部分(以下称为第一部分和第二部分)，第一部分通过可调谐电容或开关与第二部分连接，通过调整可调谐电容的容值或开关的通断状态可以对第二频段进行调谐。
由于采用本申请实施例提供的集成电路200，第一频段和第二频段的耦合度较小，因而在通过上述方式对第二频段进行调谐时，对第一频段的影响较小。
示例性，如图12所示，第二辐射贴片203分割为两个部分，第一部分通过四个可调谐电容与第二部分连接，通过调整这四个可调谐电容的电容值可以对第二频段进行调谐。
同样地，可通过在第一辐射贴片202上设置可调谐电容或开关来对第一频段进行调谐，具体方式与上述对第二频段进行调谐的方式类似，此处不再赘述。
此外，在图2所示的集成电路200中还可以被固定于印刷电路板(printed circuit board，PCB)上，其中，承载结构201通过球栅阵列(ball grid array，BGA)与PCB连接。
基于同一发明构思，本申请实施例还提供一种装载有封装天线集成电路的电子装置。参见图13，该封电子装置包括：上层辐射贴片1、下层辐射贴片2、下层辐射贴片开窗3、金属化连接孔4、焊锡凸块(solder bump)5、焊球(solder ball)(也可以称为BGA球)6、参考地7、低频垂直极化馈电点8、低频水平极化馈电点9、高频水平极化馈电点10、高频垂直极化馈电点11、射频处理芯片13以及印制电路板(printed circuit board，PCB)14。
其中，上层辐射贴片1具有对应高频频段(例如39GHz频段)的第一尺寸，下层辐射贴片2具有对应低频频段(例如28GHz频段)的第二尺寸。上层辐射贴片1通过穿过下层辐射贴片开窗3的高频水平极化馈电点10和高频垂直极化馈电点11直接馈电，下层辐射贴片2通过低频垂直极化馈电点8和低频水平极化馈电点9直接馈电。金属化连接孔4的一端与参考地连接，另一端与下层辐射贴片2连接，且多个金属化连接孔4围绕上层辐射贴片1的中心形成方形包围圈，高频水平极化馈电点10和高频垂直极化馈电点11均位于该包围圈内。低频垂直极化馈电点8、低频水平极化馈电点9、高频水平极化馈电点10和高频垂直极化馈电点11分别通过四个焊锡凸块5与射频处理芯片13连接，参考地7通过焊球6与PCB板连接。
图13所示的电子装置还包括设置在下层辐射贴片2上的T型开槽12，低频垂直极化馈电点8和低频水平极化馈电点9分别位于T型开槽12的两侧，T型开槽12可用于提高低频垂直极化馈电点8中传输的低频频段和低频水平极化馈电点9中传输的低频频段信号之间的隔离度。
需要说明的是，图13所示的电子装置中对于承载上层辐射贴片1和下层辐射贴片2的承载结构均不做具体限定，在图13中未示出该承载结构。
图13所示的电子装置中，上层辐射贴片1可视为前述第二辐射贴片203的一个具体示例，下层辐射贴片2可以视为前述第一辐射贴片202的一个具体示例，金属化连接孔4可以视为前述金属柱的一个具体示例，参考地7可以视为前述接地层的一个具体示例，低频垂直极化馈电点8可以视为前述第一垂直馈电线的一个具体示例，低频水平极化馈电点9可以视为前述第一水平馈电线的一个具体示例，高频水平极化馈电点10可以视为前述第二水平馈电线的一个具体示例，高频垂直极化馈电点11可以视为前述第二垂直馈电线的一个具体示例，T型开槽12可以视为前述第一T型开槽的一个具体示例。
需要说明的是，图13所示的电子装置中除BGA球和PCB之外的部分可视为上述集成电路200的一个具体示例，图13所示的电子装置中未详尽描述的实现方式及其技术效果可参见集成电路200中的相关描述。
下面给出图13所示的电子装置的一些仿真结果。
参见图14，为图13所示的电子装置的回波损耗的仿真结果，其中横坐标代表频率，单位为GHz；纵坐标代表回波损耗值，单位为dB。从图14可以看出，图13所示的电子装置在高频频段(39GHz频段)的最低频率点(m3)和最高频率点(m4)的回波损耗均在-10dB左右；在低频频段(28GHz频段)的最低频率点(m1)和最高频率点(m2)的回波损耗也在-10dB左右，因而无论在高频频段还是低频频段，信号损失均较低，该电子装置很好地覆盖了高频频段和低频频段这两个频段。
参见图15，为图13所示的电子装置的高频频段和低频频段之间的隔离度的仿真结果，其中横坐标代表频率，单位为GHz；纵坐标代表隔离度，单位为dB。其中，包含m1和m2的曲线代表高频垂直极化方向与低频水平极化方向之间的隔离度，包含m3和m4的曲线代表高频水平极化方向和低频垂直极化方向的隔离度。从图15中的两条曲线可以看出，高频信号和低频信号之间的隔离度均优于-20dB，两个频段间的隔离度较高，两个频段间的相互影响较小。参见图16，为图13所示的电子装置中两个极化方向上的信号的隔离度的仿真结果，其中横坐标代表频率，单位为GHz；纵坐标代表隔离度，单位为dB。其中，低频频段的最低频率点为m1，低频频段的最高频率点为m2；高频频段的最低频率点为m3，高频频段的最高频率点为m4。从图16可以看出，在低频频段，两个极化方向上的低频信号的隔离度均优于-20dB；在高频频段，两个极化方向上的高频信号的隔离度较高均优于-40dB。无论在高频频段还是在低频频段，两个极化方向上的信号的隔离度均较高。
参见图17，为图13所示的电子装置的高频增益和低频增益的仿真结果，其中横坐标代表频率，单位为GHz；纵坐标代表增益，单位为dB。从图17可以看出，两个极化方向上的高频增益较为理想，且方向图未发生明显偏移；两个极化方向上的低频增益也较为理想，方向图也未发生明显偏移。因此，采用图13所示的电子装置可以获得较为理想的低频增益和高频增益。
此外，为了更形象地示意本申请实施例提供的集成电路200，下面给出一种集成电路200的3D仿真模型的具体示例。参见图18，在该集成电路中，承载结构201承载的第一辐射贴片202具有对应第一频段信号的第一尺寸，承载结构201承载的第二辐射贴片203具有对应第二频段信号的第二尺寸。第一辐射贴片202通过第一垂直馈电线和第一水平馈电线直接馈电，第二辐射贴片203通过第二垂直馈电线和第二水平馈电线耦合馈电。金属柱的一端与接地层连接，另一端与第一辐射贴片202连接，且多个金属柱围绕第二辐射贴片203的中心形成方形包围圈，第一垂直馈电线和第一水平馈电线均位于该包围圈内。此外，在该集成电路中，第一辐射贴片202上还包含第一T型开槽。
基于以上实施例，本申请实施例还提供一种终端设备，该终端设备包含上述集成电路200。
可选地，该终端设备还可包括PCB，PCB通过BGA与集成电路200中的承载结构201连接.
示例性地，该终端设备包括但不限于智能手机、智能手表、平板电脑、VR设备、AR设备、个人计算机、手持式计算机、个人数字助理。
显然，本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样，倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (24)

  1. 一种应用于终端设备的集成电路，其特征在于，包括：承载结构、第一辐射贴片、第二辐射贴片以及射频处理芯片，所述第一辐射贴片、所述第二幅射贴片和所述射频处理芯片分别被放置于所述承载结构的不同层上，所述承载结构中设置有第一馈电线以及第二馈电线，所述射频处理芯片通过所述第一馈电线向所述第一辐射贴片馈电，所述射频处理芯片通过所述第二馈电线向所述第二辐射贴片馈电。
  2. 如权利要求1所述的集成电路，其特征在于，所述第一辐射贴片具有对应第一频段信号的第一尺寸，所述第二辐射贴片具有对应第二频段信号的第二尺寸。
  3. 如权利要求2所述的集成电路，其特征在于，所述射频处理芯片中设有对应所述第一频段信号的第一射频线路以及对应所述第二频段信号的第二射频线路，所述第一馈电线与所述第一射频线路连接，所述第二馈电线与所述第二射频线路连接。
  4. 如权利要求3所述的集成电路，其特征在于，所述第一辐射贴片通过所述第一馈电线与所述第一射频线路连接，实现将接收到的第一频段信号传输至所述第一射频线路进行处理，或者实现将所述第一射频线路输出的第一频段信号通过所述第一辐射贴片发送；
    所述第二辐射贴片通过所述第二馈电线与所述第二射频线路连接，实现将接收到的第二频段信号传输至所述第二射频线路进行处理，或者实现将所述第二射频线路输出的第二频段信号通过所述第二辐射贴片发送。
  5. 如权利要求1～4任一项所述的集成电路，其特征在于，所述承载结构包括第一承载结构和第二承载结构，所述第一承载结构用于承载所述第一辐射贴片，所述第二承载结构用于承载所述第二辐射贴片。
  6. 如权利要求5所述的集成电路，其特征在于，所述承载结构还包括：
    接地层，所述接地层上设置有开口，所述第一馈电线和所述第二馈电线穿过所述开口分别为所述第一辐射贴片和第二辐射贴片馈电。
  7. 如权利要求6所述的集成电路，其特征在于，所述第一辐射贴片处于所述第二辐射贴片和所述接地层之间。
  8. 如权利要求7所述的集成电路，其特征在于，所述第一辐射贴片上设有开窗，所述第二馈电线穿过所述第一辐射贴片上的开窗向所述第二辐射贴片馈电。
  9. 如权利要求7或8所述的集成电路，其特征在于，还包括：
    多个金属柱，所述多个金属柱中的每个金属柱的一端与所述接地层相连，另一端与所述第一辐射贴片相连，所述多个金属柱围绕所述第一辐射贴片形成包围圈，所述第二馈电线穿过所述包围圈。
  10. 如权利要求9所述的集成电路，其特征在于，所述第一馈电线位于所述包围圈之外。
  11. 如权利要求1～10任一项所述的集成电路，其特征在于，所述第一馈电线包括第一垂直馈电线和第一水平馈电线，所述第二馈电线包括第二垂直馈电线和第二水平馈电线。
  12. 如权利要求11所述的集成电路，其特征在于，所述第一辐射贴片上包含分别与所述第一垂直馈电线和所述第一水平馈电线对应的两个馈电点，所述第二辐射贴片上包含分别与所述第二垂直馈电线和所述第二水平馈电线对应的两个馈电点。
  13. 如权利要求12所述的集成电路，其特征在于，所述第一辐射贴片上的两个馈电点的极化方向相差90°，所述第二辐射贴片上的两个馈电点的极化方向相差90°，所述第一辐射贴片上的任一馈电点与所述第二辐射贴片上的两个馈电点的极化方向之差分别为90°和180°。
  14. 如权利要求11～13任一项所述的集成电路，其特征在于，所述第一辐射贴片上设有第一开槽，所述第一垂直馈电线和所述第一水平馈电线分别位于所述第一开槽的两侧；和/或
    所述第二辐射贴片上设有第二开槽，所述第二垂直馈电线和所述第二水平馈电线分别位于所述第二开槽的两侧。
  15. 如权利要求1～14任一项所述的集成电路，其特征在于，所述第一辐射贴片和第二辐射贴片相互平行，且所述第一辐射贴片与所述第二辐射贴片中心对正。
  16. 如权利要求1～15任一项所述的集成电路，其特征在于，所述第一辐射贴片分为第一部分和第二部分，所述第一辐射贴片的第一部分和所述第一辐射贴片的第二部分通过可调谐电容或开关单元连接。
  17. 如权利要求1～16任一项所述的集成电路，其特征在于，所述第二辐射贴片分为第一部分和第二部分，所述第二辐射贴片的第一部分和所述第二辐射贴片的第二部分通过可调谐电容或开关单元连接。
  18. 如权利要求1～17任一项所述的集成电路，其特征在于，所述射频处理芯片通过焊锡凸块分别与所述第一馈电线和所述第二馈电线连接。
  19. 如权利要求1～18任一项所述的集成电路，其特征在于，所述承载结构包括：
    层叠的介质层；或者
    交替层叠的介质层和金属层；或者
    交替层叠的介质层和金属球结构；或者
    交替层叠的介质层和金属柱结构；或者
    交替层叠的塑料球结构和金属层。
  20. 如权利要求19所述的集成电路，其特征在于，所述介质层的材料包括有机树脂、聚四氟乙烯、含有玻纤布的聚四氟乙烯复合材料中的至少一种；所述金属层的材料包括铜和锡中的至少一种；所述金属柱结构的材料包括铜和锡中的至少一种；所述金属球结构的材料包括铜和锡中的至少一种。
  21. 如权利要求19或20所述的集成电路，其特征在于，所述金属球结构包括多个金属球；所述金属柱结构包括多个金属柱；所述塑料球结构包括多个塑料球。
  22. 一种终端设备，其特征在于，包括如权利要求1～21任一项所述的集成电路。
  23. 如权利要求22所述的终端设备，其特征在于，还包括：
    印刷电路板PCB，所述PCB通过球栅阵列BGA与所述集成电路中的承载结构连接。
  24. 如权利要求22或23所述的终端设备，其特征在于，所述终端设备为智能手机。
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