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WO2020011261A1 - Film mince, cellule solaire à film mince et son procédé de préparation - Google Patents

Film mince, cellule solaire à film mince et son procédé de préparation Download PDF

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Publication number
WO2020011261A1
WO2020011261A1 PCT/CN2019/095861 CN2019095861W WO2020011261A1 WO 2020011261 A1 WO2020011261 A1 WO 2020011261A1 CN 2019095861 W CN2019095861 W CN 2019095861W WO 2020011261 A1 WO2020011261 A1 WO 2020011261A1
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WO
WIPO (PCT)
Prior art keywords
layer
film
deposition
thin film
thin
Prior art date
Application number
PCT/CN2019/095861
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English (en)
Chinese (zh)
Inventor
徐强
白安琪
郭会永
Original Assignee
北京铂阳顶荣光伏科技有限公司
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Publication of WO2020011261A1 publication Critical patent/WO2020011261A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiments of the present invention relate to the technical field of thin films, and in particular, to a thin film, a thin film solar cell, and a preparation method thereof.
  • thin-film solar cells Compared with conventional crystalline silicon solar energy, thin-film solar cells have many advantages, such as light weight, thin thickness, and foldability, and are easy to achieve large-scale commercial production.
  • Thin-film solar cells usually include a substrate layer, a photoelectric conversion layer, and a cover film layer.
  • the cover film layer needs to have high light transmission efficiency, and it also needs to have better Water barrier properties, oxygen barrier properties, etc., among them, the water barrier performance of the cover film layer of ordinary thin film solar cells needs to reach 10 -4 g / m 2 / day or less.
  • the cover film layer is made of multiple layers of resin, and the surface layer of the cover film layer is a transparent polymer containing fluorine, whose main functions are reinforcement, weather resistance, UV resistance, moisture resistance, low dielectric constant, and high breakdown voltage.
  • the bottom layer of the cover film layer is a resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) after surface treatment.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • the main function is to block water and oxygen, and the surface layer and the bottom layer Adhesion is carried out between them.
  • the underlying process of the cover film layer is to deposit a thin layer of inorganic material on the surface of PET or PEN by atomic layer deposition (Atom Layer Deposition, ALD for short) to prepare a thin cover layer that meets the market demand. After testing, The thin cover layer has a water barrier performance of less than 10 -4 g / m 2 / day, which cannot meet the performance requirements of ultra-thin and high water barrier.
  • ALD atomic layer deposition
  • embodiments of the present invention provide a thin film, a thin film solar cell, and a method for preparing the same.
  • the main technical problem to be solved is that the cover film has poor water blocking performance.
  • the embodiments of the present invention mainly provide the following technical solutions:
  • an embodiment of the present invention provides a method for preparing a film, including:
  • a second deposition process is used to form a second deposition layer of an inorganic material on the first deposition layer.
  • the sidewall step coverage of the first deposition process is smaller than the sidewall step coverage of the second deposition process.
  • the first deposition process is a chemical vapor deposition (Chemical Vapor Deposition, abbreviated CVD) process.
  • the chemical vapor deposition process has a deposition temperature of 50-150 degrees Celsius, a pressure of 10 hato-100 torr, a plasma power of 10-1000 watts, and a reaction interval of 1-100 densities. ear.
  • the second deposition process is an atomic layer deposition (Atom, Layer, Deposition, ALD for short) process.
  • the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate ( PMMA) or polypropylene (PP) or polyamide (PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PMMA polymethyl methacrylate
  • PP polypropylene
  • PA polyamide
  • PBT polytetramethylene terephthalate
  • PI polyimide
  • a material of the first deposited layer is SiO 2 or Si 3 N 4 or Al 2 O 3 or TiN;
  • the inorganic material of the second deposited layer is Al 2 O 3 or TiN or TiO 2 .
  • an embodiment of the present invention provides a film including:
  • a second deposited layer of an inorganic material is disposed on the first deposited layer.
  • the aforementioned thin film wherein the thickness of the first deposited layer is 10-100 nm;
  • the thickness of the second deposited layer is 10-100 nm.
  • an embodiment of the present invention provides a thin film solar cell surface film layer including:
  • Fluorine-containing film which is a fluorine-containing polymer
  • a film using the above-mentioned film, and the film is bonded to the fluorine-containing film.
  • an embodiment of the present invention provides a thin-film solar cell, including:
  • the photoelectric conversion layer is located between the surface film layer of the thin-film solar cell and the substrate layer, and the fluorine-containing film is exposed.
  • the thin film, the thin film solar cell and the preparation method provided by the technical solution of the present invention have at least the following advantages:
  • a first deposition layer is formed on the surface of the resin film layer, so that the first deposition layer covers the surface holes of the surface of the resin film layer, A second deposition process is then used to form a second deposition layer of inorganic material on the first deposition layer.
  • the inorganic thin film layer is The surface holes of the resin film layer cannot be completely covered. Therefore, the water resistance of the final surface-modified resin film layer is not good.
  • the surface holes of the resin film layer itself Covered by the first deposition layer the inorganic thin film layer formed by the second deposition layer of the inorganic material has better water blocking performance, and the water blocking performance of the thin film and the thin film solar cell is higher.
  • FIG. 1 is a schematic flowchart of a method for preparing a thin film according to an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a resin film layer in a method for manufacturing a thin film according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a method for preparing a thin film provided by an embodiment of the present invention after a first deposition layer is formed on a surface of a resin film layer;
  • FIG. 4 is a schematic structural diagram after a second deposition layer of an inorganic material is formed on a first deposition layer in a method for preparing a thin film according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram of a microscopic partial structure of a surface hole of a resin film layer in a method for preparing a thin film according to an embodiment of the present invention
  • FIG. 6 is a schematic structural diagram of a specific method for preparing a thin film provided by an embodiment of the present invention after a first deposition layer is formed on a surface of a resin film layer;
  • FIG. 7 is a schematic structural diagram of a thin-film solar cell according to an embodiment of the present invention.
  • the inventors found that due to the high shape retention (high disintegration coverage) of the atomic layer deposition process, the inorganic thin film layer could not completely cover the surface pores of the resin film layer itself, so the water resistance of the final surface modified resin film layer was blocked The performance is not good, which makes it unable to meet the performance requirements of ultra-thin and high water resistance.
  • a first deposition layer is first formed on the surface of a resin film layer, so that the surface holes on the surface of the resin film layer of the first deposition layer are covered, and then the second process of the inorganic material is performed.
  • the second deposition layer of the inorganic material since the surface pores on the surface of the resin film layer are covered, the second deposition layer of the inorganic material has a better water blocking effect, which improves the water resistance of the film.
  • FIG. 4 are one embodiment of a method for preparing a thin film provided by the present invention. Please refer to FIG. 1 to FIG. 4.
  • a first deposition layer 20 is formed on the surface of the resin film layer 10 by using a first deposition process, so that the surface holes 11 on the surface of the resin film layer of the first deposition layer are covered; wherein, the surface holes 11 on the surface of the resin film layer are
  • the microporous structure has a pore diameter of about 10-100 nm, but it is not limited to this.
  • the microporous structure exists due to the material characteristics of the resin film layer.
  • the material of the resin film layer may be polyethylene terephthalate.
  • PET polyethylene naphthalate
  • PMMA polymethyl methacrylate
  • PP polypropylene
  • PA polyamide
  • PBT polytetramethylene terephthalate
  • PI polyimide
  • a second deposition process is used to form a second deposition layer 30 of inorganic material on the first deposition layer 20.
  • a first deposition layer is formed on the surface of the resin film layer, so that the first deposition layer covers the surface holes on the surface of the resin film layer, and then a second deposition process is used in the first deposition layer.
  • a second deposition layer of an inorganic material is formed on a deposition layer.
  • the surface holes of the resin film layer itself are covered by the first deposition layer, the The inorganic thin film layer formed by the second deposited layer of the material has good water blocking performance, and the prepared thin film has high water blocking performance.
  • the step coverage of the sidewall of the first deposition process is Less than 1, such as less than 0.8.
  • the sidewall step coverage of the first deposition process is smaller than the sidewall step coverage of the second deposition process, so that the first deposition process can deposit a thinner layer in a shorter time than the second deposition process. Then, the surface hole can be covered, so that the process time required for the prepared film is shorter and the thickness of the prepared film is thinner.
  • the first deposition process may be a physical deposition process, and in the implementation thereof, a certain damage may be caused to the resin film layer.
  • the first deposition process is a chemical vapor deposition process.
  • the chemical vapor deposition process has a deposition temperature of 50-150 degrees Celsius, a pressure of 10 haoto-100 torr, and a plasma power of 10-1000. Watts, the reaction interval is 1-100 mils, the thickness of the first deposited layer is 10-100 nm, and the deposited material can be SiO 2 or Si 3 N 4 or Al 2 O 3 or TiN.
  • the second deposition process may be an atomic layer deposition process.
  • the deposition temperature of the atomic layer deposition process is 50-150 degrees Celsius
  • the pressure is 10 hato-100 torr
  • the thickness of the second deposited layer is 10-100 nm.
  • the inorganic material is Al 2 O 3 or TiN or TiO 2 .
  • the materials of the first deposited layer and the second deposited layer may be the same, so that the overall performance of the film is relatively stable, but it is not limited thereto, and the materials of the first deposited layer and the second deposited layer may be different according to requirements.
  • the embodiments provided by the present invention improve the overall water vapor barrier performance of the thin film; on the other hand, the physical deposition process takes less time and costs than the atomic layer deposition process, and can reduce the thickness of the film layer that the atomic layer deposition process needs to deposit. This reduces the overall time and cost of preparing the film.
  • a first deposition layer is first provided on the surface of the resin film layer, so that the surface holes of the surface of the first deposition layer resin film layer are covered, and the second deposition layer of the inorganic material is disposed on the first
  • the second deposited layer of the inorganic material has a better water blocking effect, which improves the water resistance of the film.
  • the thin film provided by an embodiment of the present invention includes a resin film layer, a first deposition layer, and a second deposition layer of an inorganic material.
  • a first deposition layer covers a surface hole of a surface of the resin film layer, and a second deposition layer of an inorganic material is disposed on the first deposition layer.
  • the second deposition layer, the first deposition layer, and the resin film layer of the inorganic material are sequentially stacked, and the surface holes on the surface of the resin film layer of the first deposition layer are covered by the first deposition layer.
  • the inorganic thin film layer cannot completely cover the surface pores of the resin film layer itself, therefore, the water resistance of the final surface modified resin film layer is not good, compared with the prior art
  • a thinner second deposition layer can be used to have better water blocking performance. high.
  • the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide ( PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
  • the material of the first deposited layer is SiO 2 or Si 3 N 4 or Al 2 O 3 or TiN
  • the inorganic material is Al 2 O 3 or TiN or TiO 2 .
  • the thickness of the first deposited layer is 10-100 nm; the thickness of the second deposited layer is 10-100 nm.
  • the thin film in this embodiment can be prepared by using the method for preparing the thin film in the above embodiment.
  • a surface film layer of a thin-film solar cell includes a fluorine-containing film and a thin film.
  • the film is bonded to the fluorine-containing film.
  • the thin film includes a resin film layer, a first deposition layer, and a second deposition layer of an inorganic material.
  • a first deposition layer covers a surface hole of a surface of the resin film layer, and a second deposition layer of an inorganic material is disposed on the first deposition layer.
  • the fluorine-containing film mainly has the characteristics of transparency, ultraviolet resistance, moisture resistance, low dielectric constant, and high breakdown voltage.
  • the fluorine-containing film and the film can be bonded by an adhesive.
  • the material of the fluorine-containing film is ethylene-tetrafluoroethylene copolymer (ETFE), polyvinyl fluoride (PVF), or polyvinylidene fluoride (PVDF), but is not limited thereto.
  • the material of the resin film layer is polyethylene terephthalate (PET) or polyethylene naphthalate (PEN) or polymethyl methacrylate (PMMA) or polypropylene (PP) or polyamide ( PA) or polytetramethylene terephthalate (PBT) or polyimide (PI) or nylon;
  • the material of the first deposited layer is SiO 2 or Si 3 N 4 or Al 2 O 3 or TiN
  • the inorganic material of the second deposited layer is Al 2 O 3 or TiN or TiO 2 .
  • the thickness of the first deposited layer is 10-100 nm; the thickness of the second deposited layer is 10-100 nm.
  • the thin film in this embodiment can be prepared by using the method for preparing the thin film in the above embodiment.
  • FIG. 7 is an embodiment of a thin-film solar cell provided by the present invention.
  • a thin-film solar cell according to an embodiment of the present invention includes: a thin-film solar cell surface film layer 110, a substrate layer 120, and a photoelectric conversion layer 130.
  • the conversion layer 130 is located between the thin-film solar cell surface film layer 110 and the substrate layer 120.
  • the thin-film solar cell surface film layer can use the thin-film solar cell surface film layer of the above embodiment, which is not repeated in the embodiment of the present invention.
  • the fluorine-containing film 111 is exposed, and the thin film 112 is located between the fluorine-containing film 111 and the photoelectric conversion layer 130.
  • the substrate layer can be made of stainless steel or aluminum conductive material
  • the photoelectric conversion layer can be made of copper indium gallium selenium (CIGS) compound material or copper indium selenium (CIS) or gallium arsenide (GaAS) or cadmium telluride (CdTe) or perovskite Etc., but not limited to this.
  • the components in the device in the embodiment can be adaptively changed and set in one or more devices different from the embodiment.
  • the components in the embodiment can be combined into one component, and furthermore, they can be divided into a plurality of sub-components. Except for at least some of such features being mutually exclusive, all combinations of all features disclosed in this specification (including the accompanying claims, abstract and drawings) and all components of any device so disclosed may be combined in any combination.
  • Each feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.

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Abstract

L'invention concerne un film mince, une cellule solaire à film mince et un procédé de préparation associé, qui se rapportent au domaine technique des films minces, et le problème technique principalement résolu est la performance de blocage d'eau de la couche de film de couverture qui est médiocre. La solution technique utilisée principalement est : un procédé de préparation d'un film mince, consistant à : utiliser un premier processus de dépôt pour former une première couche de dépôt (20) sur une surface d'une couche de film de résine (10), de telle sorte qu'un trou de surface de la surface de la couche de film de résine (10) est recouvert par la première couche de dépôt (20) ; utiliser un second processus de dépôt pour former une seconde couche de dépôt (30) d'un matériau inorganique sur la première couche de dépôt (20). Comme le trou de surface de la couche de film de résine (10) lui-même est recouvert par la première couche de dépôt (20), le film mince amène une couche de film mince inorganique formée par la seconde couche de dépôt (30) du matériau inorganique à avoir une bonne performance de blocage de l'eau, et les performances de blocage de l'eau du film mince et de la cellule solaire à film mince sont élevées.
PCT/CN2019/095861 2018-07-13 2019-07-12 Film mince, cellule solaire à film mince et son procédé de préparation WO2020011261A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810769820.5A CN110718606A (zh) 2018-07-13 2018-07-13 薄膜、薄膜太阳能电池及其制备方法
CN201810769820.5 2018-07-13

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WO2020011261A1 true WO2020011261A1 (fr) 2020-01-16

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Citations (6)

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JP2009090633A (ja) * 2007-09-20 2009-04-30 Fujifilm Corp ガスバリアフィルムおよびその製造方法、ならびに、ガスバリアフィルムを用いた電子デバイス
CN104637890A (zh) * 2013-11-14 2015-05-20 昆山工研院新型平板显示技术中心有限公司 一种薄膜封装结构
CN105576056A (zh) * 2014-11-06 2016-05-11 汉能新材料科技有限公司 一种柔性封装复合膜
CN106255591A (zh) * 2014-03-04 2016-12-21 东洋制罐集团控股株式会社 阻气性层压体
CN108136727A (zh) * 2015-08-18 2018-06-08 东洋制罐集团控股株式会社 水分阻挡性层压体
CN108198869A (zh) * 2017-12-06 2018-06-22 中国乐凯集团有限公司 一种柔性太阳能电池用封装膜

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157591B (zh) * 2011-01-11 2012-09-19 山东东岳高分子材料有限公司 一种太阳能电池背板及其制备方法
JP6806083B2 (ja) * 2015-11-30 2021-01-06 王子ホールディングス株式会社 シートおよびシートの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009090633A (ja) * 2007-09-20 2009-04-30 Fujifilm Corp ガスバリアフィルムおよびその製造方法、ならびに、ガスバリアフィルムを用いた電子デバイス
CN104637890A (zh) * 2013-11-14 2015-05-20 昆山工研院新型平板显示技术中心有限公司 一种薄膜封装结构
CN106255591A (zh) * 2014-03-04 2016-12-21 东洋制罐集团控股株式会社 阻气性层压体
CN105576056A (zh) * 2014-11-06 2016-05-11 汉能新材料科技有限公司 一种柔性封装复合膜
CN108136727A (zh) * 2015-08-18 2018-06-08 东洋制罐集团控股株式会社 水分阻挡性层压体
CN108198869A (zh) * 2017-12-06 2018-06-22 中国乐凯集团有限公司 一种柔性太阳能电池用封装膜

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