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WO2020004475A1 - Élément de conversion photoélectrique à jonctions multiples et batterie solaire à jonctions multiples - Google Patents

Élément de conversion photoélectrique à jonctions multiples et batterie solaire à jonctions multiples Download PDF

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Publication number
WO2020004475A1
WO2020004475A1 PCT/JP2019/025409 JP2019025409W WO2020004475A1 WO 2020004475 A1 WO2020004475 A1 WO 2020004475A1 JP 2019025409 W JP2019025409 W JP 2019025409W WO 2020004475 A1 WO2020004475 A1 WO 2020004475A1
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Prior art keywords
cell
electrode
photoelectric conversion
conversion element
junction
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PCT/JP2019/025409
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English (en)
Japanese (ja)
Inventor
健 太野垣
紀久夫 牧田
武芳 菅谷
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国立研究開発法人産業技術総合研究所
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Publication of WO2020004475A1 publication Critical patent/WO2020004475A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a multi-junction photoelectric conversion element formed by joining cells of a plurality of photoelectric conversion elements, a multi-junction solar cell including the multi-junction photoelectric conversion element, and a method for manufacturing a multi-junction photoelectric conversion element.
  • a multi-junction solar cell has a structure in which a plurality of solar cells composed of semiconductor elements having different band gap energies are stacked.
  • solar cells that absorb sunlight of different wavelengths are connected in series, so that sunlight with a wide energy distribution can be used efficiently.
  • the output voltage of the multi-junction solar cell increases because it is the sum of the voltages of the cells.
  • Each photoelectric conversion element or each cell of a solar cell constituting a multi-junction photoelectric conversion element or a multi-junction solar cell is also referred to as a subcell.
  • a solar cell placed on the light incident side (outermost surface side) of the multi-junction solar cell is called a top cell.
  • a semiconductor having a large band gap is used, and light having a shorter wavelength is absorbed and light having a longer wavelength is transmitted.
  • the bottom cell is located farthest from the light incident side.
  • a semiconductor having a small band gap is used for the bottom cell, and absorbs light transmitted through the top cell.
  • the middle solar cell is called a middle cell.
  • FIG. 11 is a schematic cross-sectional view of a conventional two-terminal multi-junction solar cell.
  • the two-terminal type multi-junction solar cell has a stacked structure in which a top cell 2 and a bottom cell 3 are stacked, and electrodes (for extracting electric energy) are provided on the front surface and the back surface when viewed from the light incident side. It has a two-terminal structure including a top electrode 5 and a back electrode 6).
  • FIG. 12 shows an equivalent circuit diagram of the two-terminal multi-junction solar cell of FIG.
  • a two-terminal multi-junction solar cell the same current flows through each sub-cell connected in series. Equal currents I 1 and the current I 2 and the current I 3 in FIG. Due to this current matching condition, in each subcell, the amount of current flowing through the two-terminal multi-junction solar cell is determined by the photoelectric flow of the subcell in which the photoelectric flow generated by light absorption is the lowest value. In a subcell in which a high photoelectric flow rate is generated, a reverse current (dark current) is generated, and the amount of flowing current is smaller than the generated photocurrent value.
  • the photoelectric flow generated in each sub-cell varies due to fluctuations in the solar spectrum and the like. Losses due to fluctuations are likely to occur.
  • Non-Patent Document 1 As a method of reducing loss due to spectrum fluctuation, a multi-electrode terminal type multi-junction device structure such as a four-terminal type in which electrodes are arranged between subcells has been proposed (see Non-Patent Document 1).
  • FIG. 13 is an equivalent circuit diagram of a four-terminal multi-junction solar cell.
  • the four-terminal multi-junction solar cell is configured by a circuit in which the top cell 2 and the bottom cell 3 are electrically separated. Photocurrent generated by each subcell (current I 2 (current I 1), the current I 4 (current I 3)) is output as the respective output power (voltage V 1, the voltage V 2). Since no current limiting condition is imposed, loss due to fluctuations in the solar spectrum is unlikely to occur.
  • FIG. 14 is a schematic cross-sectional view of a four-terminal multi-junction solar cell.
  • the four-terminal multi-junction solar cell has a structure in which a top cell 2 and a bottom cell 3 are stacked, and has four terminals to output power of the top cell 2 and the bottom cell 3 respectively.
  • the four terminals are sequentially stacked from the light incident side on the top electrode 5 on the surface of the top cell 2, the intermediate electrode 7a electrically connected to the transparent electrode layer 8a stacked on the back surface of the top cell, and the surface of the bottom cell 3.
  • the intermediate electrode 7b provided on the transparent electrode layer 8b and the back electrode 6 on the back surface of the bottom cell.
  • an insulating adhesive layer 9 for electrically insulating the transparent electrode layers from each other is arranged.
  • a transparent material is used to reduce light absorption loss.
  • FIG. 15 is an equivalent circuit diagram of a three-terminal multi-junction solar cell.
  • the three-terminal multi-junction solar cell is constituted by a circuit in which an intermediate electrode is arranged between a top cell 2 and a bottom cell 3.
  • the current flowing to the top cell is I 2
  • the current flowing to the bottom cell is I 3
  • the current flowing to each terminal is (current I 1 , current I 4 , current I 5 )
  • the voltage of the multi-junction device is V 1 represents the voltage of the bottom cell in V 2.
  • Excess photocurrent generated in the top cell or the bottom cell is output as electric power via the intermediate electrode.
  • the top cell and the bottom cell do not need to satisfy the current matching condition, and even when the photoelectric flow generated in the top cell and the bottom cell becomes uneven due to spectrum fluctuation or the like, an excess dark current is not generated. I'm done.
  • FIG. 16 is a structural view of a conventional three-terminal multi-junction solar cell.
  • the three terminals are, in order from the light incident side, a top electrode 5 on the front surface of the top cell 2, an intermediate electrode 7, and a back electrode 6 on the back surface of the bottom cell.
  • the three-terminal type multi-junction solar cell has a method in which a top cell 2 and a bottom cell 3 are continuously grown to form a laminated structure, and an intermediate electrode 7 is attached later in the middle of the laminated structure. It has been made.
  • a method of manufacturing a multi-junction solar cell by a method of directly growing a GaAs-based top cell on a Si-based bottom cell is known (see Non-Patent Document 2).
  • FIG. 17 shows a three-terminal solar cell disclosed in Non-Patent Document 3.
  • a three-terminal solar cell in which a top electrode 5 is provided on a top cell 2 and alternate electrodes 6a and 6b are formed on the back surface of the bottom cell 3 has been proposed. However, it has a structure similar to the transistor structure (np / p- (p, n)), and has a different circuit configuration from the multi-junction solar cell (np / np).
  • Patent Document 1 Non-Patent Document 1
  • Reference 4 Non-patent Reference 5
  • a reverse current (dark current) is generated in a subcell in which a high photoelectric flow is generated, and the amount of flowing current is smaller than the generated photocurrent value.
  • the photoelectric flow generated in each subcell fluctuates due to fluctuations in the solar spectrum or the like. There's a problem.
  • Non-Patent Document 3 has a different circuit configuration from a multi-junction solar cell (np / np). That is, Non-Patent Literature 3 discloses that a back surface alternate electrode is provided to solve the following problem.
  • the normal electrode on the incident light side blocks the incident light and creates a shadow on the cell, which has been a factor of loss of current generation.
  • an alternate back type electrode has been introduced. Thereby, light loss due to the electrode on the incident surface side is reduced, and high current generation is realized.
  • Non-Patent Document 3 is a tandem (a structure in which two are arranged vertically) because a pn junction is not connected in series. The structure does not provide a high voltage.
  • the prior art proposal using bonding with conductive nanoparticles is a technology relating to a two-terminal structure, and has not been able to solve the limitation due to current limiting in a multi-junction solar cell.
  • the present invention seeks to solve these problems, and provides a multi-junction photoelectric conversion element that is robust against spectral fluctuations, has subcells of high-quality crystals, and has a reduced optical reflection loss at the junction.
  • the purpose is to do.
  • An object of the present invention is to provide a method for manufacturing the multi-junction photoelectric conversion element. Moreover, it aims at providing the multi-junction solar cell provided with the said multi-junction photoelectric conversion element.
  • the present invention has the following features to achieve the above object.
  • a multi-junction photoelectric conversion element wherein a first cell of the photoelectric conversion element located on the light incident side, a second cell of the photoelectric conversion element located on the side opposite to the light incident side, A bonding layer made of conductive nanoparticles for bonding the cell and the second cell, a first electrode located on a light incident side surface of the first cell, and a A second electrode located on the surface opposite to the light incident side, and a third electrode provided on the second cell, the electrode being located on the surface opposite to the light incident side, or a third electrode provided on the first cell side.
  • a third electrode which is an intermediate electrode located on the surface.
  • the cell of the multi-junction photoelectric conversion element is a single-junction solar cell using crystalline Si, amorphous Si, microcrystalline Si, organic, or chalcopyrite-based material, or GaAs, InP, GaSb.
  • the multi-junction photoelectric conversion element according to any one of the above (1) to (5) which is a solar cell including two or more junctions stacked on a Ge substrate or the like.
  • a multi-junction solar cell comprising the multi-junction photoelectric conversion element according to any one of (1) to (6).
  • a method for manufacturing a multi-junction photoelectric conversion element comprising: a first cell of a photoelectric conversion element located on a light incident side; and a second cell of a photoelectric conversion element located on a side opposite to the light incident side. Forming a second electrode on the second cell opposite to the light incident side, and forming a third electrode opposite the light incident side on the second cell, or a surface on the first cell side. Providing a third electrode serving as an intermediate electrode located in the first cell, bonding the first cell to the second cell with conductive nanoparticles not covered with organic molecules, Forming a first electrode on the light-incident side surface of the cell described in (1).
  • the multi-junction photoelectric conversion element of the present invention uses sub-cells made of different materials, is bonded by a bonding layer made of conductive nanoparticles, and is provided with three terminals, so that sunlight with a wide energy distribution can be used with high efficiency. It is possible to achieve the effect of suppressing the loss due to the imbalance of the photocurrent value generated in each subcell constituting the multi-junction solar cell. Therefore, the multi-junction photoelectric conversion element of the present invention is robust against spectrum fluctuation. Further, in the multi-junction photoelectric conversion element of the present invention, since each sub-cell is joined by a joining layer made of conductive nanoparticles, each sub-cell can be made of a high-quality crystal, and each sub-cell has high performance. . Moreover, the multi-junction photoelectric conversion element of the present invention can realize a multi-junction photoelectric conversion element with reduced optical reflection loss at the junction because the junction layer is a junction layer made of conductive nanoparticles.
  • the multi-junction solar cell of the present invention is constituted by the multi-junction photoelectric conversion element of the present invention, it is possible to efficiently use sunlight or the like having a wide energy distribution and is robust against spectrum fluctuation.
  • a pre-formed photoelectric conversion element with second and third electrodes is used for a bottom cell, and this and a top cell are bonded to each other to obtain a high-crystal quality cell. Since it can be used, a high-performance multi-junction photoelectric conversion element can be manufactured as compared with a conventional three-terminal device.
  • FIG. 1 is a schematic cross-sectional view of a photoelectric conversion element having a first basic structure according to the present invention. It is a perspective view of the photoelectric conversion element of the 1st basic structure of the present invention.
  • FIG. 2 is a bottom view of a bottom cell in which an alternate back electrode is formed in the first basic structure of the present invention.
  • It is a perspective view of the photoelectric conversion element of the 2nd basic structure of the present invention.
  • FIG. 9 is a top view of a bottom cell on which an intermediate electrode is formed in the second basic structure of the present invention. It is a schematic structure sectional view of a 1st embodiment of the present invention.
  • FIG. 4 is an equivalent circuit diagram of a conventional four-terminal multi-junction solar cell. It is a schematic cross section of a conventional four-terminal type multi-junction solar cell. It is an equivalent circuit diagram of the conventional three-terminal type multi-junction solar cell. It is a schematic structure sectional view of the conventional three-terminal type multi junction solar cell. It is a schematic structure sectional view of the conventional three-terminal type solar cell. It is a schematic structure sectional view of the conventional three-terminal type solar cell. It is a schematic structure sectional view of the conventional three-terminal type solar cell. It is a schematic structure sectional view of the conventional three-terminal type solar cell.
  • the present inventors have developed a junction structure and a terminal structure in a photoelectric conversion element in which a plurality of cells of a photoelectric conversion element are joined, thereby increasing the efficiency of solar energy and the like, and reducing the loss due to spectrum fluctuation of sunlight. Is realized.
  • a multi-junction photoelectric conversion element relates to a photoelectric conversion element in which cells of a plurality of photoelectric conversion elements are joined, and relates to a first cell (hereinafter, referred to as a “top cell”) of a photoelectric conversion element located on a light incident side. ), And the second cell (hereinafter, also referred to as a “bottom cell”) of the photoelectric conversion element located on the side opposite to the light incident side, and the first cell and the second cell are joined. And a bonding layer made of conductive nanoparticles that are not covered with organic molecules.
  • the multi-junction photoelectric conversion element according to the embodiment of the present invention has terminals from three electrodes, it is a three-terminal multi-junction photoelectric conversion element.
  • the three terminals include a first electrode terminal located on a light incident side surface of the first cell and a second electrode terminal located on a light incident side opposite surface of the second cell. , Terminals of a third electrode provided in the second cell.
  • the third electrode is one of an electrode located on a surface opposite to the light incident side and an intermediate electrode located on a surface on the first cell side.
  • FIG. 1 is a schematic structural sectional view of a first basic structure 10 of a three-terminal multi-junction photoelectric conversion element.
  • FIG. 2 is a perspective view of the first basic structure.
  • FIG. 3 is a diagram illustrating the alternating electrodes 16 and 17 on the back surface of the bottom cell having the first basic structure. One of the alternate electrodes on the back is n-type and the other is p-type.
  • the first basic structure has a stacked structure including a top cell 12, a bottom cell 13, and a bonding layer 14 made of conductive nanoparticles for bonding them, a top electrode 15 is provided on a light incident side surface of the top cell, and a bottom cell 13 is formed.
  • On the back surface there is an electrode structure in which a third electrode is provided in addition to the conventional second electrode.
  • the electrode structure on the back surface of the bottom cell 13 has an alternate electrode structure in which second electrodes and third electrodes are alternately arranged.
  • the electrode portion where thin linear electrodes are arranged in parallel is also called a grid.
  • the second electrode and the third electrode constituting the alternating electrode structure are connected to each other with a thicker line (bus bar electrode) or the like than the alternating electrode portion, thereby forming a second electrode and a third electrode.
  • the second electrode and the third electrode may have a comb shape, and the comb teeth of each comb may alternately enter. In addition, it is not limited to a comb shape.
  • a voltage is generated between the top electrode 15 and the electrode 17 by adding the voltages generated by the top cell 12 and the bottom cell 13. For example, when the current I 2 generated in the top cell 12 is smaller than the current I 3 generated in the bottom cell 13, the current flowing between the top electrode 15 and the electrode 17 becomes the current I 2 generated in the top cell 12. to be rate-limiting in 2, current I 2 flows. Further, a voltage generated in the bottom cell 13 is generated between the electrode 16 and the electrode 17.
  • An excess photocurrent generated in the first cell (top cell) is taken out as electric power by the first electrode (top electrode) and the second electrode (one of the backside alternating electrodes), and the second electrode (backside alternating electrode) is taken out.
  • the excess photocurrent generated in the second cell (bottom cell) is extracted as power by one of the electrodes) and the third electrode (the other of the backside alternating electrodes).
  • FIG. 4 is a schematic structural cross-sectional view of the second basic structure 20 of the three-terminal multi-junction photoelectric conversion element.
  • FIG. 5 is a perspective view of the second basic structure.
  • FIG. 6 is a top view of a bottom cell having an intermediate electrode of the second basic structure.
  • the second basic structure includes a stacked structure including a top cell 22, a bottom cell 23, and a bonding layer 24 made of conductive nanoparticles for bonding them.
  • a top electrode 25 is provided on the light incident side of the top cell.
  • FIGS. 6A and 6B show an intermediate electrode including a grid on which thin electrode lines are arranged in parallel and a thicker electrode (bus bar electrode) connecting the grid.
  • (A) is an example of a comb shape, and (b) is an example of providing a plurality of bus bar electrodes.
  • the shape of the intermediate electrode is not particularly limited. It is preferable that the grid is made of a thin electric wire so as not to block light.
  • the equivalent circuit diagram of the second basic structure is the same as the equivalent circuit diagram of the three-terminal multi-junction solar cell (FIG. 15).
  • the first cell (top cell) is formed by the first electrode (top electrode) and the second electrode (backside electrode) or the first electrode (top electrode) and the third electrode (intermediate electrode).
  • the surplus photocurrent is extracted as electric power
  • the surplus photocurrent generated in the second cell (bottom cell) is extracted as electric power by the second electrode (back surface electrode) and the third electrode (intermediate electrode).
  • each surface area of the plurality of photoelectric conversion element cells can be appropriately designed. It is preferable to design by adjusting the surface area size of each cell so that the photoelectric flow becomes uniform and the current matching condition is satisfied. For example, it is preferable to use a bottom cell having a larger surface area than the top cell so that the current of the bottom cell does not become smaller than the current of the top cell.
  • the cell of the photoelectric conversion element in the present invention is, for example, a cell of a solar cell.
  • the first or second cell of the photoelectric conversion element in the present invention is a single-junction solar cell using a crystalline Si-based, amorphous Si-based, microcrystalline Si-based, organic-based, or chalcopyrite-based material.
  • the multi-junction photoelectric conversion element of the present invention includes a first cell of the photoelectric conversion element arranged on the light incident side and a second cell of the photoelectric conversion element arranged on the side opposite to the light incident side.
  • the photoelectric conversion element of the present invention is not limited to a solar cell for sunlight.
  • the bonding layer for bonding the first cell and the second cell of the present invention is made of conductive nanoparticles that are not covered with organic molecules.
  • no transparent electrode and no transparent adhesive are inserted between the top cell and the bottom cell.
  • the size of the conductive nanoparticles is preferably not less than 5 nanometers and not more than 50 nanometers. The reason is that in order to reduce the reflection loss in the conductive nanoparticle adhesive layer, it is preferable that the thickness of the bonding layer made of the conductive nanoparticles be 5 nm or more and 50 nm or less.
  • the conductive nanoparticles include metal nanoparticles such as Pd, Au, Ag, Pt, Ni, Al, Zn, and In, and metal oxide nanoparticles such as ZnO and In 2 O 3 .
  • Examples of the shape of the conductive nanoparticles include a sphere, a hemisphere, a column, and an ellipsoid.
  • the size of the conductive nanoparticles in the bonding layer direction is preferably 10 nm or more in order to obtain good conductivity.
  • the thickness is preferably 100 nm or less in order to suppress absorption and scattering of light by the nanoparticles.
  • the arrangement interval of the conductive nanoparticles in the bonding layer is preferably 2 to 10 times the conductive nanoparticle size.
  • the conductive nanoparticles in the bonding layer are not covered with a protective film such as an organic molecule or a bonding material, and are a single layer (monolayer) in which individual independent particles are uniformly arranged.
  • the arrangement interval of the conductive nanoparticles preferably has a distance of at least twice the size of the nanoparticles in order to transmit light well. More preferably, it is three times or more.
  • the method of manufacturing the first basic structure of the three-terminal multi-junction photoelectric conversion element of the present embodiment includes the following steps.
  • (Step 3) may be performed prior to either or both of (Step 1) and (Step 2).
  • (Step 1) A step of forming a second electrode and a third electrode on the surface of the bottom cell opposite to the light incident side.
  • (Step 2) A bonding step in which the top cell is bonded to the bottom cell on which the electrodes have been formed in Step 1 by using conductive nanoparticles that are not covered with organic molecules.
  • Step 3) A step of forming a first electrode on the light incident side surface of the top cell.
  • the method for manufacturing the second basic structure of the three-terminal multi-junction photoelectric conversion element of the present embodiment includes the following steps.
  • (Step 3) may be performed prior to either or both of (Step 1) and (Step 2).
  • (Step 1) A step of forming a second electrode located on the surface opposite to the light incident side on the bottom cell and providing a third electrode serving as an intermediate electrode on the light incident side of the bottom cell.
  • (Step 2) A bonding step in which the top cell is bonded to the bottom cell on which the electrodes have been formed in Step 1 by using conductive nanoparticles that are not covered with organic molecules.
  • (Step 3) A step of forming a first electrode on the light incident side surface of the top cell.
  • FIG. 7 is a schematic cross-sectional view of a GaAs // Si multi-junction solar cell 30 having an alternate back electrode structure.
  • a GaAs solar cell having the n-type GaAs layer 31 formed on the light incident side of the p-type GaAs layer 32 is used as the top cell.
  • the top cell includes a top electrode 35 on the light incident side.
  • n-type and p-type electrodes n-type back electrode 37 and p-type back electrode 36
  • a region of the p-type Si portion 38 is formed in a partial region of the n-type Si layer 33 on the back surface side of the substrate, and a p-type back electrode 36 connected to the p-type Si 38 is formed.
  • the conventional solar spectrum in the GaAs top cell and Si bottom cell, respectively, current of about 30 mA / cm 2 and 10 mA / cm 2 is produced.
  • the size (surface area) of the subcell is adjusted so that the photoelectric flow generated in the top cell and the bottom cell becomes uniform and the current matching condition is satisfied.
  • surplus photocurrent generated in the bottom cell due to the spectrum fluctuation of sunlight is taken out as electric power from the backside alternating electrodes.
  • FIG. 8 is a schematic sectional view of a GaAs // Si multi-junction solar cell 40 having an intermediate electrode structure.
  • a GaAs solar cell in which the n-type GaAs layer 41 is formed on the light incident side of the p-type GaAs layer 42 is used.
  • the top cell includes a top electrode 45 on the light incident side.
  • an Si solar cell having an n-type Si layer 48 and an intermediate electrode 47 formed on the light incident side of the substrate of the p-type Si layer 49 is used.
  • a p-type back electrode 46 is provided on the back side of the bottom cell.
  • the bonding layer 44 made of conductive nanoparticles By bonding the top cell and the bottom cell using the bonding layer 44 made of conductive nanoparticles, a three-terminal multi-junction solar cell is formed. Pd nanoparticles are used as the conductive nanoparticles.
  • the size (surface area) of the subcell is adjusted so that the photoelectric flow generated in the top cell and the bottom cell becomes uniform and the current matching condition is satisfied.
  • the excess photocurrent generated in the GaAs top cell due to the spectrum fluctuation of sunlight is taken out as electric power using the intermediate electrode and the top electrode. Excess photocurrent generated in the bottom cell is extracted as power using the back electrode and the intermediate electrode.
  • FIG. 9 is a schematic cross-sectional view of a GaAs / GaAs // Si multi-junction solar cell 50 having an alternate back electrode structure.
  • a GaAs subcell consisting of an n-type GaAs layer 51 and a p-type GaAs layer 52
  • a tunnel junction layer 53 is used as a top cell.
  • a GaAs subcell consisting of an n-type GaAs layer 58 and a p-type GaAs layer 59
  • the top cell includes a top electrode 55 on the light incident side.
  • a Si solar cell in which n-type and p-type electrodes (n-type back electrode 57 and p-type back electrode 56) are alternately formed on the back surface side of the substrate of the n-type Si layer 61 is used.
  • a p-type Si 62 region is formed in a partial region of the n-type Si layer 61 on the back surface side of the substrate, and a p-type back electrode 56 connected to the p-type Si 62 is formed.
  • a three-terminal multi-junction (three-junction) solar cell is formed.
  • Pd nanoparticles are used as the conductive nanoparticles.
  • a current of about 10 mA / cm 2 is generated.
  • the size (surface area) of the subcell is adjusted so that the photoelectric flow generated in the top cell and the bottom cell becomes uniform and the current matching condition is satisfied.
  • surplus photocurrent generated in the bottom cell due to the spectrum fluctuation of sunlight is taken out as electric power from the backside alternating electrodes.
  • FIG. 10 is a schematic cross-sectional view of a GaInP / GaAs // GaInAsP / GaInAs multi-junction solar cell 70 having an intermediate electrode structure.
  • a GaInP subcell (consisting of an n-type GaInP layer 71 and a p-type GaInP layer 72), a tunnel junction layer 73 and a GaAs subcell (consisting of an n-type GaAs layer 78 and a p-type GaAs layer 79) are used.
  • GaInP / GaAs2 junction solar cell is used.
  • the top cell includes a top electrode 75 on the light incident side.
  • the bottom cell includes a GaInAsP subcell (consisting of an n-type GaInAsP layer 80 and a p-type GaInAsP layer 81), a tunnel junction layer 82, and a GaInAs subcell (consisting of an n-type GaInAs layer 83 and a p-type GaInAs layer 84).
  • a GaInAsP / GaInAs2 junction solar cell is used.
  • a solar cell in which an intermediate electrode 77 is formed on a part other than the junction surface on the n-type GaInAsP layer 80 located on the light incident side of the p-type GaInAsP layer 81 is used.
  • a p-type back electrode 76 is provided on the back side of the bottom cell.
  • a three-terminal multi-junction (four-junction) solar cell is formed by bonding the top cell and the bottom cell using the bonding layer 74 made of conductive nanoparticles.
  • the size (surface area) of the subcell is adjusted so that the photoelectric flow generated in the top cell and the bottom cell becomes uniform and the current matching condition is satisfied.
  • an excess photocurrent generated in the GaInP / GaAs top cell due to the fluctuation of the spectrum of sunlight is taken out as power using the intermediate electrode and the top electrode.
  • Excess photocurrent generated in the GaInAsP / GaInAs bottom cell is extracted as power using the back electrode and the intermediate electrode.
  • the multi-junction photoelectric conversion element of the present invention has been described by using examples of a plurality of types of solar cells.
  • the cells of the photoelectric conversion element used in the present invention are not limited to those illustrated.
  • the photoelectric conversion element or solar cell of the present invention is industrially useful because it is a device that improves the use efficiency of light energy such as sunlight and is robust against fluctuations in the spectrum of sunlight.
  • Second basic structure 26 Second electrode 30 GaAs // Si multi-junction solar cell with alternate back electrode structure 31, 41, 51, 58, 78 n-type GaAs layer 32, 42, 52, 59, 79 p-type GaAs layers 33, 48, 61 n-type Si layers 36, 46, 56, 76 p-type back electrode 37, 57 n-type back electrode 38, 62 p-type Si Reference Signs List 40

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Abstract

L'invention concerne : un élément de conversion photoélectrique à jonctions multiples qui a une robustesse vis-à-vis des fluctuations de spectre, qui comporte des sous-cellules de cristal de haute qualité, et dans laquelle une perte de réflexion optique dans une partie liée est réduite ; une batterie solaire à jonctions multiples ; et un procédé de fabrication de l'élément de conversion photoélectrique à jonctions multiples. L'élément de conversion photoélectrique à jonctions multiples comprend : une première cellule (12) qui est un élément de conversion photoélectrique positionné sur le côté d'incidence de lumière ; une seconde cellule (13) qui est un élément de conversion photoélectrique positionné sur un côté opposé au côté d'incidence de lumière ; une couche de jonction (14) avec laquelle la première cellule (12) et la seconde cellule (13) sont liées ensemble, et qui est constituée de nanoparticules conductrices ; une première électrode (15) positionnée sur la surface côté incidence de lumière de la première cellule (12) ; une deuxième électrode (16) positionnée sur une surface, de la deuxième cellule (13), opposée au côté d'incidence de lumière ; et une troisième électrode qui est disposée sur la seconde cellule (13), et qui est une électrode (17) positionnée sur la surface opposée au côté d'incidence de lumière ou est une électrode intermédiaire positionnée sur la surface côté première cellule (12). En conséquence, un élément de conversion photoélectrique à jonctions multiples à haute performance peut être mis en œuvre.
PCT/JP2019/025409 2018-06-29 2019-06-26 Élément de conversion photoélectrique à jonctions multiples et batterie solaire à jonctions multiples WO2020004475A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177120A (ja) * 1999-12-16 2001-06-29 Toyota Motor Corp 太陽電池
JP2001196620A (ja) * 2000-01-11 2001-07-19 Toyota Motor Corp タンデム型太陽電池
US20020144725A1 (en) * 2001-04-10 2002-10-10 Motorola, Inc. Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure
JP2012023351A (ja) * 2010-06-18 2012-02-02 Semiconductor Energy Lab Co Ltd 光電変換装置
WO2013058291A1 (fr) * 2011-10-17 2013-04-25 独立行政法人産業技術総合研究所 Procédé de liaison d'éléments semi-conducteurs et structure de liaison
US20160149068A1 (en) * 2013-06-18 2016-05-26 Commissariat A I'energie Atomique Et Aux Energies Alternatives Multi-junction solar cell

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177120A (ja) * 1999-12-16 2001-06-29 Toyota Motor Corp 太陽電池
JP2001196620A (ja) * 2000-01-11 2001-07-19 Toyota Motor Corp タンデム型太陽電池
US20020144725A1 (en) * 2001-04-10 2002-10-10 Motorola, Inc. Semiconductor structure suitable for forming a solar cell, device including the structure, and methods of forming the device and structure
JP2012023351A (ja) * 2010-06-18 2012-02-02 Semiconductor Energy Lab Co Ltd 光電変換装置
WO2013058291A1 (fr) * 2011-10-17 2013-04-25 独立行政法人産業技術総合研究所 Procédé de liaison d'éléments semi-conducteurs et structure de liaison
US20160149068A1 (en) * 2013-06-18 2016-05-26 Commissariat A I'energie Atomique Et Aux Energies Alternatives Multi-junction solar cell

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