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WO2020004291A1 - 太陽電池および太陽電池の製造方法 - Google Patents

太陽電池および太陽電池の製造方法 Download PDF

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Publication number
WO2020004291A1
WO2020004291A1 PCT/JP2019/024851 JP2019024851W WO2020004291A1 WO 2020004291 A1 WO2020004291 A1 WO 2020004291A1 JP 2019024851 W JP2019024851 W JP 2019024851W WO 2020004291 A1 WO2020004291 A1 WO 2020004291A1
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WO
WIPO (PCT)
Prior art keywords
substrate
hole
solder
ribbon
aluminum electrode
Prior art date
Application number
PCT/JP2019/024851
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English (en)
French (fr)
Japanese (ja)
Inventor
傑也 新井
ミエ子 菅原
小林　賢一
秀利 小宮
正五 松井
潤 錦織
Original Assignee
アートビーム有限会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アートビーム有限会社 filed Critical アートビーム有限会社
Priority to CN201980043029.9A priority Critical patent/CN112352321A/zh
Priority to JP2020527492A priority patent/JPWO2020004291A1/ja
Priority to KR1020217002113A priority patent/KR20210022110A/ko
Publication of WO2020004291A1 publication Critical patent/WO2020004291A1/ja

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention is directed to forming an area for generating a high electron concentration when light is irradiated on a substrate, forming an insulating film that transmits light on the area, and taking out electrons from the area on the insulating film. Is formed to extract electrons to the outside through the finger electrodes, and a ribbon is soldered to a hole formed in the aluminum electrode on the back surface of the substrate, and a hole is formed above the aluminum electrode from the edge of the hole. Solder out more than 1mm to increase the conversion efficiency and improve the fixing strength of the ribbon on the back side, and eliminate the Ag pattern between the ribbon and the substrate to prevent the reduction of the conversion efficiency and convert it by a temperature cycle test.
  • the present invention relates to a solar cell and a method for manufacturing the solar cell that prevent a reduction in efficiency.
  • a nitride film 32 is formed on the surface (upper surface) of a silicon substrate 31, and a paste (containing lead glass) of a finger electrode (silver) 33 is screen-printed and sintered thereon.
  • a finger electrode 33 for extracting electrons from the high electron concentration region to the outside by forming a hole in the nitride film 32 is formed.
  • a bus bar electrode (silver) 34 is screen-printed and sintered in a direction orthogonal to the finger electrode 33 to generate the electrode.
  • a ribbon (lead wire) 35 was soldered on the bus bar electrode (silver) 34 with solder 36 to firmly fix the ribbon 35 to the silicon substrate 31.
  • an aluminum electrode 37 was formed on the back surface (lower surface) of the silicon substrate 31, and a ribbon 39 was soldered and fixed on the aluminum electrode 37.
  • the aluminum electrode 37 is formed on the entire surface and the soldering strength of the ribbon 39 is low, a hole is formed in a part of the aluminum electrode 37 (a hole is formed on the surface corresponding to the bus bar electrode 34).
  • the silver paste is screen-printed and sintered to form a silver portion 371, and the ribbon 39 is fixed to the silver portion 371 with the solder 38 to obtain a necessary fixing strength.
  • silver paste is applied to holes formed in a part of the aluminum electrode 37 and sintered, and the ribbon 39 is soldered thereon, so that the silver pattern is fixed on the substrate.
  • the ribbon 39 is soldered on top of this, and electrons flow in through the route to the ribbon 39-silver pattern substrate, thereby lowering the conversion efficiency of the solar cell or further lowering the conversion efficiency by the TC test. Phenomenon occurs, and it is desired to solve this.
  • the present inventors soldered directly to the aluminum electrode hole portion on the back surface of the substrate and soldered by slightly protruding from the edge of the hole onto the aluminum electrode to increase the conversion efficiency and fix the ribbon on the back surface.
  • the present invention forms a region that generates a high electron concentration when light is irradiated onto a substrate, forms an insulating film that transmits light over the region, and extracts electrons from the region over the insulating film.
  • An aluminum electrode was formed on the entire back surface of the substrate in a solar cell in which a finger electrode serving as an outlet was formed, electrons were taken out through the finger electrode, and electrons were allowed to flow in from the back surface of the substrate to form a circuit.
  • a hole is formed in a part of the electrode, or an aluminum electrode with a hole formed in a part of the entire back surface of the substrate, and soldered directly to the substrate inside the hole and then soldered the ribbon, or Solder directly to the board inside the hole, and also solder it beyond the edge of the hole to the upper side of the aluminum electrode by 0.1 mm or more, and solder the board part and the hole inside the soldered hole.
  • the conversion efficiency is increased by allowing electrons to flow in from the aluminum electrode portions protruding by more than 0.1 mm from the electrode, and by eliminating the Ag pattern between the ribbon and the substrate to prevent the conversion efficiency from decreasing and performing the conversion by a temperature cycle test.
  • a solar cell that prevents a reduction in efficiency has been realized.
  • the portion where the hole of the aluminum electrode is formed is a portion corresponding to the above-mentioned lead-out line on the surface.
  • soldering is performed in a state where the temperature of the portion to be soldered is lower than the temperature at which the solder melts and preheated to room temperature or higher.
  • the solder contains at least one of zinc, aluminum and silicon in tin, and does not contain Pb, Ag and Cu.
  • soldering is performed by protruding 0.1 mm or more from the edge of the hole to the upper side of the aluminum electrode, and protruding only 0.1 mm to 3.0 mm or less from the upper side of the aluminum electrode.
  • the present invention solders the ribbon directly to the hole of the aluminum electrode on the back surface of the substrate, and solders by slightly protruding from the edge of the hole onto the aluminum electrode to increase the conversion efficiency.
  • the structure and method for improving the fixing strength of the ribbon on the back surface, eliminating the Ag pattern between the ribbon and the substrate, preventing the conversion efficiency from being reduced, and preventing the conversion efficiency from being reduced by the temperature cycle test are realized.
  • FIG. 1 shows a configuration diagram of an embodiment of the present invention.
  • FIG. 1 shows a side view of the whole
  • (b) of FIG. 1 shows an enlarged view of a main part of (a) of FIG.
  • a substrate (silicon substrate) 1 is a silicon substrate (single crystal or polycrystal) on which a solar cell is to be formed.
  • the back surface (Al) 2 of the substrate is the back surface of the substrate 1. After forming an aluminum electrode on the entire back surface, a hole is partially formed or an aluminum electrode having a hole is formed on the entire back surface of the substrate 1. Or something.
  • the substrate heating heater 3 is a heating element for preheating the substrate 1 and, when soldering to the substrate 1, is heated to a temperature lower than a temperature at which the solder melts and to a temperature higher than a room temperature, and has an automatic temperature adjusting mechanism. Things.
  • the ABS solder 11 is a long solder material having a shape convenient for supplying solder such as a thread or a ribbon to be soldered to the back surface (aluminum electrode) 2 of the substrate.
  • the solder material is made of a material containing at least one of zinc (Zn), aluminum (Al), and silicon (Si) in tin (Sn) and not containing lead (Pb), silver (Ag), and copper (Cu). Alloy (referred to as ABS solder 11).
  • the melting point of the ABS solder 11 which depends on these solder materials is usually in the range of about 150 ° C. to 350 ° C. and is determined by the compounding ratio of the material.
  • a preheating temperature (a temperature not lower than room temperature at which the ABS solder 11 does not melt) is determined, and the soldering tip 22 is heated and melted when an ultrasonic wave is applied.
  • the appropriate temperature for soldering on top is determined experimentally. As a result, it becomes possible to perform ultrasonic soldering as shown in FIGS. 9A, 9B, and 9C, which will be described later, and the tensile strength when the ribbon is soldered is high, and the conversion efficiency of the solar cell is improved. could be further increased.
  • the composition of the solder material of the ABS solder 11 is such that tin (Sn) is 20 to 95 wt%, zinc (Zn) is 3 to 60 wt%, and additives such as aluminum (Al) and silicon (Si) are added in appropriate amounts. These mixing ratios are determined optimally by experiments depending on the melting temperature and the target of ABS soldering such as a substrate or a ribbon.
  • the ABS solder material supply mechanism 12 is a mechanism for supplying the ABS solder 11 to the iron tip 12 at a predetermined speed (a predetermined amount of solder, which will be described later) in accordance with the moving speed of the iron tip 22 with respect to the substrate 1.
  • the ribbon 13 is to be soldered to a portion of the substrate 1 or a pre-soldered portion where a hole is formed in the back surface (aluminum electrode) 2 of the substrate, to take out current from the substrate 1 to the outside, or to flow electrons. .
  • the ABS solder 11 is supplied as shown in FIG. 1A
  • preliminary soldering (ultrasonic soldering) is performed on the substrate 1 in the hole portion on the back surface 2 of the substrate, as shown in FIG. 1B.
  • the ribbon 13 is supplied by being superimposed on the ABS solder 11, the ribbon 13 is soldered (ultrasonic soldering) to the substrate 1 in the hole portion on the back surface 2 of the substrate.
  • the ribbon is normally soldered (soldering without ultrasonic waves) to the pre-soldered portion in a later step.
  • a ribbon with solder in which the ABS solder 11 is soldered to the ribbon 13 in advance may be used.
  • the soldered ribbon needs to be soldered to the ribbon 13 in advance so as to be sufficiently thick so that the solder of about 0.1 mm or more protrudes from the edge of the hole onto the back surface (aluminum electrode) 2 of the substrate.
  • the soldering iron 21 heats the iron tip 22 to a predetermined temperature and supplies ultrasonic waves.
  • the soldering iron tip 22 is attached to the tip of the soldering iron 21, applies ultrasonic waves to a portion to be soldered (a hole portion on the back surface 2 of the substrate, etc.), and supplies the melted ABS solder 11. It is to be soldered.
  • the soldering iron heating power supply 23 supplies power so that the ironing tip 22 has a predetermined temperature, and has an automatic temperature adjustment mechanism by detecting the temperature of the ironing tip 22 portion.
  • the soldering iron ultrasonic power generation mechanism 24 supplies an ultrasonic wave from the ironing tip 22 to a portion to be soldered (a hole or the like on the back surface 2 of the substrate).
  • the ultrasonic power may be about 1 to 10 W. If it is too weak, the ultrasonic soldering becomes defective. If it is too strong, the ultrasonic wave may damage the film (such as an aluminum electrode) or conversely, the soldering may be defective.
  • the optimum power is determined by experiment. Usually, it is performed at 1 to several watts.
  • the moving mechanism 25 is a mechanism for automatically moving the soldering iron 21 at a predetermined speed, here, moving the soldering iron 21 rightward at a predetermined speed.
  • the predetermined speed is interlocked with the ABS solder material supply mechanism 12 that automatically supplies the ABS solder 11, and the ABS solder 11 is about 0.1 mm or more from the edge of the hole of the substrate back surface 2, and usually has an aluminum thickness of less than 3 mm.
  • the adjustment is made (experimentally adjusted) so that the ABS solder 11 is soldered to the extent that it protrudes above the electrodes.
  • the substrate (a rectangular substrate of about 150 mm) 1 is placed on a stand (not shown) having the preliminary heater 3 and adjusted to a temperature slightly lower than the melting of the ABS solder 11 (experimentally adjusting the temperature). Decide).
  • the soldering iron heating power supply 23 supplies power to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves to supply ultrasonic waves to the ironing tip 22 ( Since the heating temperature and the ultrasonic power vary depending on the material of the ABS solder 11, it is determined by experiment for each material).
  • the ultrasonic wave is supplied to the substrate 1 in the hole portion of the substrate back surface (aluminum electrode) 2 while melting the ABS solder 11 with the iron tip 22 (lightly pressed).
  • the moving mechanism 25 moves the iron tip 22 rightward in the drawing.
  • the ABS solder material supply mechanism 12 supplies the ABS solder 11 at a predetermined speed, and the melted ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 onto the substrate back surface (aluminum electrode) 2 by about 0.1 mm or more.
  • the moving speed of the iron tip 22 and the supply amount of the ABS solder 11 are experimentally determined so as to satisfy these relationships.
  • the heating temperature and the ultrasonic power are also adjusted. Do).
  • ABS solder 11 is soldered by protruding from the edge of the hole of the substrate 1 at the hole portion of the substrate back surface (aluminum electrode) 2 to the substrate back surface (aluminum electrode) 2 by about 0.1 mm to 3 mm.
  • the preliminary soldering of the ABS solder 11 or the soldering of the ribbon 13 with the ABS solder 11 is directly performed on the substrate 1 in the portion of the hole of the substrate back surface (aluminum electrode) 2 as described later.
  • the efficiency of the solar cell can be improved, and the ribbon can be firmly fixed to the substrate 1 by being directly soldered to the substrate 1 through the hole of the rear substrate 2 with the ABS solder 11. Become.
  • the substrate heating temperature (preliminary heating) was set at 180 ° C as standard, and at least the upper limit temperature was 200 ° C or less (below the temperature at which the ABS solder does not melt). Anything above this board was damaged.
  • the soldering iron temperature in this case is 400 ° C. It is about 500 °C at most. This is adjusted by the moving speed of the iron tip and the supply speed of the solder material. The higher the speed, the higher the temperature.
  • the ultrasonic output is less than 6 watts for the back side and less than 3 watts for the front side.
  • the above conditions are for a solder material with a melting point of about 217 ° C, which is mainly made of an alloy of tin and zinc.
  • FIG. 2 shows a flowchart (overall) for explaining the operation of the present invention.
  • step S22 a surface treatment is performed.
  • a nitride film is formed on the silicon substrate (for example, N-type) prepared in S21, and patterns such as finger electrodes and bus bar electrodes are formed.
  • a nitride film 32 is formed on the front side of a silicon substrate 31 and patterns such as finger electrodes 33 and bus bar electrodes 34 are formed in the same manner as in FIG.
  • step S23 a back surface process is performed.
  • an aluminum pattern is formed on the back surface of a silicon substrate, for example, an aluminum electrode having holes on the entire back surface of the silicon substrate is screen-printed with an aluminum paste. Then, the present invention proceeds to S25.
  • S25 is sintered. This sinters the patterns formed by the surface treatment in S22 and the back surface treatment in S23 at once.
  • a finger electrode, a bus bar electrode, and an aluminum electrode with a hole on the back side were formed on the front side of the substrate.
  • step S26 ribbon attachment is performed using ABS solder. This is because the ribbon 13 is directly soldered to the portion of the Si substrate 1 where the aluminum electrode has a hole with the ABS solder, and the ribbon 13 protrudes about 0.1 mm or more from the edge of the hole onto the aluminum electrode. Attach it.
  • step S27 measurement (2) is performed. That is, the electrical characteristics of the solar cell are measured after the ribbon 13 in step S26 is soldered with the ABS (described later with reference to FIG. 3).
  • FIG. 3 is a flowchart illustrating the detailed operation of the present invention. This is a detailed flowchart of the measurement (2) in S28 of FIG.
  • S31 performs measurement (2-1) before a TC (thermocycle) test. This is because the measurement before the TC test of the substrates of S26 (ribbon with the ABS solder of the present invention) and S27 (lead soldering of the ribbon on the conventional Ag and without the ribbon) of FIG. Perform 1).
  • the measurement items are Isc, Voc, FF, EFF and the like shown in FIGS.
  • step S32 TC500 (500 hours / 24 hours cycle) is performed.
  • the substrate 1 to be tested (S26 and S27 in FIG. 2) is put into a high-temperature / low-temperature test apparatus and the temperature / humidity is changed in a 24-hour cycle as shown in FIG. Perform the test continuously. In this test, it is shown in Fig. 5.
  • step S33 measurement (2-2) is performed. That is, the electrical characteristics of the solar cell are measured for the substrate 1 after the test of the TC 500 in S32 (see FIG. 6).
  • TC1000 is performed. It performs a longer 1000 hour / 24 hour cycle test than the S32 TC500 (see FIG. 5).
  • step S35 measurement (2-3) is performed. This measures the electrical characteristics of the solar cell for the substrate 1 after the test of TC1000 in S34 (see FIG. 6).
  • thermocycle test (2-1) and the measurement after the TC500 test (2-1) were performed on the substrate 1 (the present invention, with or without the conventional ribbon) prepared according to the flowchart of FIG. 2-2), and a measurement (2-3) after the test of TC1000 was performed.
  • FIG. 4 and FIG. 6 schematically show the results.
  • FIG. 4 shows an example of an IV curve of the present invention and a conventional IV curve.
  • the horizontal axis represents the output voltage V. of the solar cell.
  • the vertical axis represents the output current I of the ocean battery.
  • the IV characteristics of the solar cell of the present invention and the conventional solar cell prepared according to the flowchart of FIG. 2 were measured, and a curve as shown in the figure was obtained.
  • ABS is a solar cell according to the present invention in which a ribbon is soldered with ABS, and is made in S21 to S23, S25, and S26 in FIG. 2 described above.
  • Ref is a conventional solar cell in which a ribbon is soldered with lead on Ag, and is created in S21 to S25 and S27 in FIG. 2 of FIG. 2 described above.
  • FIG. 5 shows an example of a TC test of the present invention.
  • the horizontal axis represents time (h), the left end is 0 hours, and the right end is 1,000 hours.
  • the left side of the vertical axis represents temperature (° C.), and the right side of the vertical axis represents humidity (% rh).
  • the time 0 at the left end is the time when the test started, and the temperature change and humidity change were recorded as shown in the graph in the figure.
  • tests were performed on the above-described TC500 and TC1000 according to the flowchart of FIG. 3 described above.
  • the electrical characteristics of the tested substrate (solar cell) were measured, and the results shown in the graph of FIG. 6 were obtained.
  • FIG. 6 shows an example of a TC test result of the present invention.
  • TC0 is the measurement result (2-1) before the test (S31 in FIG. 3).
  • TC500 is the measurement result (2-2) after performing the test of TC500 (S33 in FIG. 3).
  • TC1000 is the measurement result (2-3) after performing the test of TC1000 (S35 in FIG. 3).
  • Ref_A on the left has no ribbon (conventional lead solder, Ag is present), and a silver paste is applied to the hole of an aluminum electrode (substrate back surface) 2 formed on the back surface of substrate 1 as shown in the figure.
  • the silver pattern is formed by sintering, and the ribbon is not soldered.
  • Ref_B in the center has a ribbon (conventional lead solder, Ag included). As shown in the figure, a silver paste is applied to the hole of the aluminum electrode (substrate back surface) 2 formed on the back surface of the substrate 1. The silver pattern is formed by sintering, and the ribbon is soldered.
  • the ABS on the right side has a ribbon (ABS solder of the present invention, no Ag), and as shown in the figure, the ribbon is directly applied to the hole of the aluminum electrode (substrate back surface) 2 formed on the back surface of the substrate 1. It does not form a silver pattern by soldering with ABS solder and applying and sintering a conventional Ag paste.
  • -Regarding TC1000 Comparing three persons (Ref_A, Ref_B, ABS) for EFF (conversion efficiency), -Ref_A is -0.94%, -Ref_B is -1.17%, -ABS is -0.58%, And measurement results were obtained as shown. That is, regarding the EFF (conversion efficiency), the ABS of the present invention has the smallest decrease in the conversion efficiency even after the test of TC1000, and a silver pattern is formed by applying and sintering a silver paste on a conventional substrate. Experiments have confirmed that the conversion efficiency is less reduced about twice as much as when the ribbon is soldered to the silver pattern with lead.
  • the ABS solder 11 is directly soldered to the substrate 1 inside the hole formed in the substrate back surface (aluminum electrode) 2 and the substrate back surface (aluminum electrode) is cut from the edge of the hole.
  • the procedure for increasing the conversion efficiency by soldering by protruding 0.1 mm or more over the top 2 will be sequentially described in detail with reference to FIGS.
  • FIG. 7 is a flowchart (overall, 2) for explaining the operation of the present invention.
  • S1 prepares a Si substrate.
  • step S2 a surface treatment is performed.
  • a nitride film is formed on the silicon substrate (for example, N-type) prepared in S1, and patterns such as finger electrodes and bus bar electrodes are formed.
  • a nitride film 32 is formed on the front side of a silicon substrate 31 and patterns such as finger electrodes 33 and bus bar electrodes 34 are formed in the same manner as in FIG.
  • step S3 a back surface process is performed.
  • an aluminum pattern is formed on the back surface of a silicon substrate, for example, an aluminum electrode having holes on the entire back surface of the silicon substrate is screen-printed with an aluminum paste. Then, the present invention proceeds to S5.
  • S5 is sintered.
  • the patterns formed by the surface treatment in S2 and the back surface treatment in S3 are sintered together.
  • finger electrodes, bus bar electrodes, and aluminum electrodes with holes on the back side were formed on the front side of the substrate in S1 to S3, S5.
  • step S6 measurement (1) is performed. This measures the electrical characteristics of the solar cell before ABS soldering using a probe before ABS soldering in S7 (see data before soldering in FIG. 10).
  • step S7 ABS soldering is performed.
  • the ABS solder is directly soldered to the portion of the Si substrate where the aluminum electrode has a hole, and the solder is protruded from the edge of the hole onto the aluminum electrode by about 0.1 mm or more.
  • the ribbons 13 may be soldered together (see FIG. 1B).
  • measurement (2) is performed. This measures the electrical characteristics of the solar cell after ABS soldering in S7 (see data after soldering in FIG. 10).
  • a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed, and then sintered together.
  • a pattern can be formed.
  • a silver paste is further applied on the Si substrate.
  • a silver paste is screen-printed on a portion of the aluminum electrode having a hole formed by the back surface treatment in S3 to form a silver pattern on the Si substrate inside the hole of the aluminum electrode.
  • a nitride film is formed on the surface of the Si substrate, patterns such as finger electrodes and bus bar electrodes are formed, and a pattern of an aluminum electrode having a hole on the back surface of the Si substrate is formed.
  • FIG. 8 is a flowchart (part 2) for explaining the detailed operation of the present invention. This is a detailed flowchart of the ABS soldering in S7 of FIG.
  • S11 preheats the substrate.
  • the substrate 1 is preheated by the substrate heater 3 with the substrate 1 of FIG. 1 placed on a stand (not shown), and heated to a temperature slightly lower than the temperature at which the ABS solder 11 melts.
  • step S12 the iron tip is heated and ultrasonic waves are applied. This is because power is supplied from the soldering iron heating power supply 23 of FIG. 1 to the soldering iron 21 to heat the ironing tip 22 to a predetermined temperature, and the soldering iron ultrasonic power generation mechanism 24 generates ultrasonic waves of a predetermined output. It is supplied to the iron tip 22.
  • Step S13 supplies ABS solder. This is because the ABS solder material supply mechanism 12 in FIG. 1 supplies the thread or ribbon-shaped ABS solder 11 at a predetermined speed between the iron tip 21 and a portion to be soldered. The supply amount of the ABS solder 11 is supplied so as to protrude about 0.1 mm or more from the edge of the hole on the substrate back surface 2 and the edge of the hole onto the substrate back surface (aluminum electrode) 2 (see FIG. The supply amount is decided). When the ribbon 13 is to be soldered as shown in FIG. 1B, the ribbon 13 may be supplied over the ABS solder 11.
  • $ S14 moves the iron tip. This moves the iron tip 22 of FIG. 1 by the moving mechanism 25, and moves to the right in FIG.
  • the iron tip 22 is moved and ultrasonically soldered so that the ABS solder 11 protrudes from the edge of the hole on the substrate back surface 2 by approximately 0.1 mm or more from the edge of the hole on the substrate rear surface 2. It becomes possible.
  • FIG. 9 shows a sample photograph example of the present invention.
  • FIG. 9A shows a sample photograph having a contact width of about 0.1 mm
  • FIG. 9B shows a sample photograph having a contact width of about 0.5 mm
  • FIG. A sample photograph of 0 mm is shown.
  • the ABS solder 11 is so arranged that the horizontal strip in each photograph covers just above the strip-shaped hole of the back substrate 2 (protruding amount: about 0.1 mm, 0.5 mm, 1.0 mm).
  • protruding amount about 0.1 mm, 0.5 mm, 1.0 mm.
  • ((A-1), (b-1) and (c-1) of FIG. 9 respectively show schematic side views of (a), (b) and (c) of FIG.
  • the contact width is the amount of protrusion from the edge of the hole onto the substrate back surface (Al) 2, and shows examples of about 0.1 mm, 0.5 mm, and 1.0 mm.
  • a band-shaped hole is provided in the back substrate (aluminum electrode) 2 formed on the substrate (Si) 1, and the ABS solder 11 is ultrasonically soldered to the band-shaped hole (see FIG. a)), or by superimposing the ribbon 13 on the ABS solder 11 and performing ultrasonic soldering (see FIG. 1B), and adjusting the supply amount of the ABS solder 11 or the movement amount of the iron tip 22.
  • Ultrasonic soldering is performed so as to protrude from the edge of the hole on the back substrate (aluminum electrode) 2 by about 0.1 mm, 0.5 mm, and 1.0 mm.
  • FIG. 10 shows a measurement example of the present invention.
  • This is a measurement example of the electrical characteristics of the solar cell before (before soldering) and after (after soldering) the ABS soldering of FIGS. 9A, 9B, and 9C described above. Show.
  • Each measurement example shows an average value of ten measurement examples. The measurement was performed at the center of the band-shaped hole on the back surface (aluminum electrode) 2 of the substrate in FIG. 9 (before soldering, the portion of the substrate 1 at the center of the hole, and after soldering, at the center of the soldered hole. The contact terminal was brought into contact with the contact portion to measure the electrical characteristics.
  • the first, second, and third measurement examples are performed with (a) a contact width of about 0.1 mm, (b) a contact width of about 0.5 mm, and (c) a contact width of about 1.0 mm in FIG. 9.
  • Isc indicates the short-circuit current of the solar cell
  • Voc indicates the open-circuit voltage of the solar cell
  • EFF indicates the maximum efficiency of the solar cell
  • FF indicates the maximum efficiency of the solar cell / (VocxIsc).
  • Before soldering indicates a value before soldering the ABS solder
  • After soldering indicates a value after soldering the ABS solder
  • “Change amount” indicates a change amount from before soldering to after soldering.
  • the maximum efficiency (EFF) is -The change amount is -0.40 for "one time” (contact width of about 0.1 mm) in the measurement example. "2 times” (contact width about 0.5mm) has a change of -0.18 "3 times” (contact width about 1.0mm) -0.13 As the contact width increases, the amount of change in the maximum efficiency from “before soldering” to “after soldering” decreases, that is, the ABS solder 11 is moved from the edge of the hole of the aluminum electrode (back surface of the substrate) 2 to the aluminum electrode 2. It was found for the first time in the present experiment that the change in the maximum efficiency from "before soldering” to “after soldering” became smaller as the protrusion amount increased to about 0.1 mm, 0.5 mm, and 1.0 mm.
  • the ABS solder 11 protrudes from the edge of the hole of the aluminum electrode (substrate back surface) 2 by increasing the amount of protrusion from the edge of the hole to the aluminum electrode 2 to about 0.1 mm, 0.5 mm, and 1.0 mm.
  • a path in which electrons are emitted from the portion of the ABS solder 11 (0.1 mm, 0.5 mm, 1.0 mm) to the substrate 1 through the aluminum electrode is added (increased), and the maximum efficiency is improved by that amount. It is.
  • FIG. 1 is a configuration diagram of one embodiment of the present invention.
  • 5 is a flowchart (overall) illustrating the operation of the present invention.
  • 4 is a detailed operation explanatory flowchart of the present invention. It is the IV curve example of this invention and the conventional. It is a TC test example of this invention. It is an example of a TC test result of the present invention. It is an operation

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PCT/JP2019/024851 2018-06-26 2019-06-22 太陽電池および太陽電池の製造方法 WO2020004291A1 (ja)

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KR1020217002113A KR20210022110A (ko) 2018-06-26 2019-06-22 태양전지 및 태양전지의 제조방법

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JP2011528493A (ja) * 2008-07-18 2011-11-17 ショット・ゾラール・アーゲー ソーラモジュールのためのはんだ付け用支持部位および半導体デバイス
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JP2018010973A (ja) * 2016-07-14 2018-01-18 アートビーム株式会社 太陽電池および太陽電池の製造方法

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