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WO2019000845A1 - Light collector, light emitting device, and projection light source - Google Patents

Light collector, light emitting device, and projection light source Download PDF

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Publication number
WO2019000845A1
WO2019000845A1 PCT/CN2017/114706 CN2017114706W WO2019000845A1 WO 2019000845 A1 WO2019000845 A1 WO 2019000845A1 CN 2017114706 W CN2017114706 W CN 2017114706W WO 2019000845 A1 WO2019000845 A1 WO 2019000845A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
concentrator
illuminating
emitting
core layer
Prior art date
Application number
PCT/CN2017/114706
Other languages
French (fr)
Chinese (zh)
Inventor
徐梦梦
胡飞
李屹
Original Assignee
深圳市光峰光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 深圳市光峰光电技术有限公司 filed Critical 深圳市光峰光电技术有限公司
Publication of WO2019000845A1 publication Critical patent/WO2019000845A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00Projectors or projection-type viewers; Accessories therefor
    • G03B21/14Details
    • G03B21/20Lamp housings
    • G03B21/2006Lamp housings characterised by the light source
    • G03B21/2033LED or laser light sources
    • G03B21/204LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00Projectors or projection-type viewers; Accessories therefor
    • G03B21/14Details
    • G03B21/20Lamp housings

Definitions

  • Light concentrator, illuminating device and projection light source Light concentrator, illuminating device and projection light source
  • the present invention relates to a light concentrator, a light emitting device, and a projection light source.
  • the present invention relates to a light-emitting concentrator in which a thermal field is uniformly distributed, and a light-emitting device and a projection light source using such a light-emitting concentrator.
  • Philips HLD High Lumen Density
  • the highly transparent luminescent material serves as both condensing and wavelength converting, which may be called a luminescent concentrator.
  • the light-emitting concentrator as described above causes heat to accumulate inside thereof due to the Stokes shift during wavelength conversion, resulting in a more severe thermal effect.
  • the concentrating concentrator is typically cooled using an ambient cooling system.
  • this method causes uneven distribution of the thermal field inside the illuminating concentrator, which produces a more serious thermal effect, thereby affecting the optical and mechanical properties of the device.
  • the present invention is intended to provide a light-emitting concentrator in which internal temperature transition is uniform and heat effect is reduced, and a light-emitting device using the same.
  • a light-emitting concentrator having a light exit surface, a light incident surface, and a contralateral surface opposite to the light exit surface, and the light-emitting gather
  • the device has a stacked multilayer structure.
  • the multilayer structure includes at least one core layer located at a center and a cladding layer laminated on both sides of the at least one core layer, the cladding layer being capable of transmitting light having a first wavelength distribution, At least one core layer is capable of converting light having the first wavelength distribution into light having a second wavelength distribution.
  • the opposite side surface is provided with a light blocking member that prevents light from leaking out, and an area of the light incident surface is larger than an area of the light exit surface.
  • the impurity concentration of the rare earth element ions is from the light-emitting concentrator in a stacking direction of the multilayer structure
  • the center of the layer gradually decreases toward both sides; when the at least one core layer is an even layer, the impurity concentration of the rare earth element ions gradually increases from the center of the light-emitting concentrator to both sides in the stacking direction of the multilayer structure Decreasing or gradually decreasing from the center of one of the core layers closest to the center of the light-emitting concentrator to both sides.
  • the at least one core layer is composed of two or more layers of luminescent ceramic layers having different concentrations of rare earth ions.
  • the at least one core layer comprises two or more layers of different luminescent ceramic layers.
  • each of the luminescent ceramic layers may be formed of a luminescent ceramic material that is miscible with different rare earth ions.
  • the shading element may be a specular reflection film.
  • the light-emitting concentrator may additionally be provided with a reflective element which is disposed on at least one surface other than the light incident surface and the light exit surface.
  • the reflective element is a specularly reflective layer having a reflectance greater than 95%; or the reflective element is a layer of diffusely reflective material having a reflectivity greater than 90%.
  • the light incident surface of the light-emitting concentrator is further provided with an optical film that can only transmit light having the first optical distribution.
  • the optical film can be a dichroic film that is permeable to light having the first wavelength distribution.
  • the optical film may be an angle selective filter film that is only permeable to light having the first wavelength distribution incident at a predetermined range of incident angles.
  • the illuminating concentrator may have a wedge shape such that the area of the light exit surface is smaller than the area of the surface opposite thereto.
  • the cladding layer is an A1 2 0 3 ceramic layer.
  • the light exiting surface is provided with an optical coupling element optically coupled to the optical concentrator, the optical coupling element having a refractive index equal to or lower than the core layer of the illuminating concentrator and The lowest refractive index in the cladding.
  • the present invention also discloses a light emitting device provided with any of the light emitting aggregators and light sources as described above.
  • the light source is disposed toward the light incident surface of the light concentrator, the light source capable Light having the first wavelength distribution is emitted.
  • the present invention also discloses a projection light source provided with any of the illumination aggregators and light sources as described above.
  • a light-emitting concentrator has a multilayer ceramic structure including a core layer and a cladding layer, and in the multilayer structure, the core layer is a luminescent ceramic having a rare earth element, the cladding is a crystal structure and Non-luminescent ceramics with similar physicochemical properties to the core layer but higher thermal conductivity. Due to the above multilayer structure, the core layer which generates heat during the illuminating process does not directly contact the surrounding cooling system, and the cladding layer acts to suppress the temperature of the core layer from being drastically changed between the core layer and the surrounding cooling system, thereby preventing Device failure due to drastic changes in internal temperature.
  • the impurity concentration of the rare earth element ions gradually decreases from the center to the both sides in the height direction, the distribution of the quantum dots which generate heat inside the light-emitting concentrator is more uniform, thereby making the heat field distribution more uniform and reducing the thermal effect. It should be understood that the benefits of the present invention are not limited to the above effects, but may be any of the benefits described herein.
  • FIG. 1 is a schematic structural view showing a light emitting apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a side view and a plan view of a multilayer structure of a light-emitting concentrator in the light-emitting device shown in FIG. 1.
  • FIG 3 is a schematic structural view showing a modification of the light emitting apparatus according to the first embodiment of the present invention.
  • FIG. 4 is a schematic view showing a Ce ion concentration distribution in a ceramic thickness direction in a light-emitting concentrator of a light-emitting device according to a first embodiment of the present invention.
  • FIG. 5 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a second embodiment of the present invention.
  • FIG. 6 is a schematic view showing a Ce ion concentration distribution in a ceramic thickness direction in a light-emitting concentrator of a light-emitting device according to a second embodiment of the present invention.
  • FIG. 7 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a third embodiment of the present invention.
  • FIG. 8 is a view showing a ceramic thickness in a light-emitting concentrator of a light-emitting device according to a third embodiment of the present invention. Schematic diagram of the Ce ion concentration distribution in the direction.
  • FIG. 9 is a schematic view showing a concentration distribution of Ce ions in a ceramic thickness direction in another light-emitting concentrator of a light-emitting device according to a third embodiment of the present invention.
  • FIG. 10 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a fourth embodiment of the present invention.
  • the light-emitting device includes a light source 1 and a light-emitting concentrator 2.
  • the light source 1 includes a substrate 10 and at least one solid state light source 11 disposed on the substrate.
  • the solid state light source 11 can in principle be any type of point source, such as a light emitting diode (LED), a laser diode or an organic light emitting diode (OLED).
  • LED light emitting diode
  • OLED organic light emitting diode
  • the plurality of solid-state light sources 11 are arranged in the form of a two-dimensional light-emitting array.
  • a laser light emitting array composed of a laser diode is taken as an example, and as shown in FIG. 1, light emitted from a plurality of solid-state light sources 11 in the light-emitting array is irradiated to the light incident surface 211 of the light-emitting concentrator 2.
  • Each solid state light source 11 is capable of emitting light having a first wavelength distribution such as, but not limited to, ultraviolet light, blue light, green light, yellow light, or red light.
  • a first wavelength distribution such as, but not limited to, ultraviolet light, blue light, green light, yellow light, or red light.
  • the first wavelength distribution is 300 to 550 nm, preferably 380 to 480 nm.
  • the solid-state light source 11 is an ultraviolet (UV) or violet light source
  • the first wavelength distribution is 420 nm or less.
  • the solid-state light source 11 is a red light source
  • the first wavelength distribution is 600 to 800 nm.
  • the plurality of solid state light sources 11 may also be solid state light sources 11 of two or more different colors.
  • the illuminating concentrator 2 generally has a height 11 and a width extending in mutually perpendicular directions. W and length L rod or rod-like device.
  • the horizontal direction in FIG. 1 is referred to as the longitudinal direction of the light-emitting concentrator 2
  • the vertical direction in FIG. 1 is referred to as the height direction of the light-emitting concentrator 2
  • the direction perpendicular to the paper surface in FIG. The width direction of the concentrator 2.
  • the light-emitting concentrator 2 has a multilayer ceramic laminate structure in which a core layer and a cladding layer are stacked in the height direction of the light-emitting concentrator 2.
  • the incident light emitted from the light source 1 is irradiated to the outer surface of the outermost cladding of the light-emitting concentrator 2.
  • the outer surface of the outermost cladding of the light-emitting concentrator 2 is the light incident surface of the light-emitting concentrator 2.
  • 1 shows a three-layer laminated structure in which a light-emitting concentrator 2 is sequentially laminated with a cladding layer 21, a core layer 20, and a cladding layer 22 in a height direction, and an outer surface 211 of the cladding layer 21 is a light incident surface of the light-emitting concentrator 2.
  • the light source 1 may be disposed on both sides of the light-emitting concentrator 2 such that incident light is incident from the sides of the light-emitting concentrator 2 at the same time.
  • both the outer surface 21 1 of the cladding 21 and the outer surface 213 of the cladding 22 are the light incident surfaces of the light-emitting concentrator 2.
  • One end surface 212 of the light-emitting concentrator 2 extending in the height direction and the width direction is a light-emitting surface.
  • the other end face 212 of the illuminating concentrator 2 opposite to the light exit surface 212 is referred to as a contralateral surface, and is provided with a shading element such as a specular reflection film to ensure that light in the illuminating concentrator 2 does not escape from the opposite side surface 214. leakage.
  • a shading element such as a specular reflection film
  • the above-described light shielding members may be provided on the other surfaces of the light-emitting concentrator 2 except the light incident surface, the light exit surface, and the opposite side surface to prevent the light beams traveling in the light-emitting concentrator 2 from being at these surfaces No total reflection occurred and leaked out.
  • other surfaces of the light-emitting concentrator 2 other than the light incident surface, the light exit surface, and the opposite side surface may be roughened to further increase the probability that the light beam is totally reflected.
  • the cross section perpendicular to the length direction of the illuminating concentrator 2 may have various shapes such as a square, a rectangle, a circle, a triangle, a polygon, and the like.
  • the light-emitting concentrator 2 in the present embodiment may be disposed such that the area of the cross-section perpendicular to the longitudinal direction gradually decreases as it approaches the light-emitting surface, so that the area of the light-emitting surface is smaller than that of the light-emitting surface.
  • the illuminating concentrator 2 may have the shape of a wedge or truncated vertebral body. This enables the area of the light exit surface to be further reduced to achieve better light extraction efficiency.
  • the core layer 20 is made of a luminescent ceramic material capable of converting light of the incident first wavelength distribution into light of the second wavelength distribution.
  • the core layer 20 is a yttrium aluminum garnet (YAG, Y 3 A1 5 0 12 ) or yttrium aluminum garnet (LuAG, Lu 3 A1 5 0 12 ) ceramic having a rare earth element. .
  • the rare ions of the rare earth element may be cryptic ions such as Ce 3+ , Pr 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Ho 3+ , Er 3+ , Tm 3+ , Yb 3+
  • the cladding layers 21 and 22 are non-luminescent ceramics having a crystal structure and a physicochemical property similar to the core layer but having a higher thermal conductivity.
  • claddings 21 and 22 are formed of YA G ceramic.
  • the above rare earth elements are not originally miscellaneous in the YAG ceramics for forming the cladding layers 21 and 22, but during the preparation of the light-emitting concentrator 2 (see below), the cryptic ions contained in the core layer 20
  • the diffusion into the cladding layers 21 and 22 causes the impurity concentration of the rare earth element to gradually decrease from the center to the outer side of the core layer in the lamination direction of the multilayer laminated structure of the light-emitting concentrator 2.
  • Incident light having a first wavelength distribution enters the light-emitting concentrator 2 from the light incident surface 211 and/or 213, and passes through the cladding 21 or 22 to reach the core layer 20. At least a portion of the incident light having the first wavelength distribution is converted into a laser light having a second wavelength distribution in the core layer 20.
  • the laser is propagating within the illuminating concentrator and directed to the light exit surface 212 under the total reflection between the shading elements of the side surface 214 and the different media, and ultimately exits the light exit surface 212.
  • a reflective element may be additionally provided on at least one surface of the light-emitting concentrator 2 other than the light incident surface and the light exit surface.
  • the reflective element 3 may be a specular reflective layer, such as a high anti-silver layer or a high anti-aluminum layer, and the reflectance is preferably greater than 95%; and may also be a diffuse reflective material layer formed of a diffuse reflective material such as Ti0 2 or BaSO ⁇ Al 2 0 3 The reflectance is preferably greater than 90%.
  • Such a reflective element is in non-optical contact with the illuminating concentrator 2, reflecting light escaping from the illuminating concentrator 2, which does not satisfy the total reflection condition, back to the illuminating concentrator 2 and finally to the light exiting surface 212, improving the light transmission efficiency.
  • the light source 1 illuminates the above-described light-emitting concentrator 2 only from the light incident surface 211 side
  • an example in which the reflective member 3 is provided on the outer surface 213 of the cladding 22 and the end surface 214 is shown in FIG.
  • an optical coupling element or an optical coupling structure may be disposed at the light exit surface 212.
  • the optical coupling element may be an optical glue, lens or lens array having a refractive index equal to or lower than the lowest refractive index of each core layer and each cladding of the light-emitting concentrator 2, and optically coupled to the optical concentrator.
  • an optical film capable of transmitting only light having a first wavelength distribution may be disposed or coated at a light incident surface of the light-emitting concentrator 2.
  • the optical film may be a dichroic film such that incident light of a first wavelength distribution emitted from the light source can enter the light-emitting concentrator through the dichroic film, and a second wavelength distribution generated within the light-emitting concentrator The laser is totally reflected at the dichroic diaphragm.
  • a filter film may be selected at an angle of incidence on the light incident surface (211, 213) of the polished ceramic, It is only possible to transmit a light beam of a first wavelength that is incident at a predetermined range of incident angles.
  • the angle selective filter film may be a blue light transmissive film selected only by the angle of blue light incident at an incident angle in the range of -8.5° to +8.5°. It should be understood that the range of the above incident angles is merely an example, and may be other angle ranges.
  • the prior art light-emitting concentrator has a single-layer structure, so that when the outer surface of the light-emitting concentrator contacts the surrounding cooling system, the outer surface of the light-emitting concentrator is drastically cooled, so that the temperature difference between the inside and the outside of the light-emitting concentrator is large, and the temperature A sharp change, which not only causes uneven distribution of the thermal field inside the illuminating concentrator, but also may cause the device to break due to rapid temperature changes.
  • the illuminating concentrator 2 since the illuminating concentrator 2 has a multi-layer structure, when the illuminating concentrator 2 is cooled using the surrounding cooling system, the cladding having excellent thermal conductivity is in direct contact with the surrounding cooling system, generating heat during the illuminating process.
  • the core layer does not come into direct contact with the surrounding cooling system.
  • the cladding acts between the core layer and the surrounding cooling system to suppress the drastic change of the core temperature, achieving a gentle transition between the temperature of the core layer and the temperature of the surrounding cooling system, preventing the internal temperature from drastically changing. Device failure.
  • the rare earth element ions in the luminescent concentrator 2 can be regarded as the quantum points at which heat is generated by the Stokes red shift.
  • the impurity concentration of the rare earth element ions in the luminescent concentrator 2 gradually decreases from the center to the both sides in the height direction. That is to say, the distribution of the quantum dots generating heat gradually decreases from the center to the both sides. Therefore, the thermal field inside the illuminating concentrator 2 is more evenly distributed, reducing the thermal effect.
  • a ceramic body is prepared by using a tape casting process.
  • a surfactant such as EDS is used as a dispersing agent
  • alcohol is used as a solvent
  • a vinyl polymer PVA, PVB or PVC
  • a phthalate plasticizer is used as a plasticizer.
  • the specific steps are as follows: the raw material powder is mixed with a solvent and a dispersing agent into a ball mill for ball-milling mixing; after the mixing is uniform, a binder and a plasticizer are added for secondary ball milling to obtain a slurry; then, the mixture is uniformly mixed.
  • the slurry is placed in a vacuum system to remove air bubbles from the slurry; thereafter, the slurry is formed on a tape casting machine to obtain a cast film , then dry at room temperature for 24 hours. After drying, a precursor cast film of Y 3 A1 5 0 12 and a precursor cast film of C ⁇ -x Ce J 3A1 5 0 12 were obtained, respectively.
  • the precursor cast film is cut according to the design size of the light-emitting concentrator (length 1 and width w as shown in FIG. 2) to obtain a cast film of a corresponding size, in consideration of subsequent sintering of the cast film.
  • the size shrinkage and subsequent machining allowance in the process the size of the cast film is slightly larger than l*w.
  • the specific value of the size can be determined by theoretical simulation combined with experimental analysis. Then, take! ! The precursor cast film of the sheet (Y, _ x Ce x ) 3 A1 5 0 12 was laminated, and n, and 11 2 pieces of the precursor cast film of ⁇ 3 1 5 0 12 were laminated on both sides. Where ⁇ . ⁇ The value of 2 is obtained by comprehensively considering the thickness of each layer (cU, dd 2 ) of the illuminating concentrator to be obtained, the dimensional shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the core layer and the cladding, and the subsequent machining. Factors such as balance are determined by combining theoretical simulations and experimental results. Thereafter, the laminated cast film is placed in an environment of 50 to 90 ° C, and 20-80 is applied.
  • the pressure of MPa allows the laminated cast films to be better combined.
  • the rubber discharge treatment was carried out at a temperature of 500 to 900 ° C for 12 hours, followed by cold isostatic pressing at a pressure of 200 to 300 MPa to obtain a ceramic green body having a multilayer structure.
  • the ceramic green body was vacuum sintered at a temperature of 1650 to 1850 ° C for 5 to 30 hours to obtain a multilayer ceramic having a multilayer laminated structure. During the sintering process, it was originally located at n.
  • the film (the Ce ion in the Y x Ce J 3 Al 5 0 12 cast film (the core layer 20 after sintering) is cast into the Y 3 A1 5 0 12 film on both sides (the cladding layers 21 and 22 after sintering)
  • the Ce ion concentration decreases from the center to the surface.
  • Figure 4 shows the concentration distribution of Ce ions in the height direction in the ceramic of the multilayer structure.
  • the multilayer ceramic was subjected to a polishing treatment to obtain a light-emitting concentrator 2.
  • FIG. 5 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a second embodiment of the present invention.
  • a light-emitting device is different from the light-emitting device of the first embodiment in that: the core layer in the multilayer structure is composed of n layers (n>2, and n is an odd number).
  • the rare earth ions are composed of a luminescent ceramic layer of a heterogeneous concentration, and the rarer ion concentration of the luminescent ceramic layer closer to the center is higher.
  • the transition from the center to the both sides of the illuminating concentrator 2 is more gradual, so that the thermal field distribution in the illuminating concentrator 2 is more uniform, further reducing the thermal effect. .
  • the illuminating device is almost identical in construction to the illuminating device of the first embodiment, The repeated explanation will be omitted below.
  • a surfactant such as EDS is used as a dispersing agent, and alcohol is used as a solvent, and a vinyl polymer (PVA, PVB or PVC) is used as a binder, and a phthalate plasticizer is used as a plasticizer.
  • the specific steps are as follows: the raw material powder is mixed with a solvent and a dispersing agent into a ball mill for ball-milling mixing; after the mixing is uniform, a binder and a plasticizer are added for secondary ball milling to obtain a slurry; then, the mixture is uniformly mixed.
  • the slurry was placed in a vacuum system to remove air bubbles in the slurry; thereafter, the slurry was molded on a tape casting machine to obtain a cast film, which was then dried at room temperature for 24 hours. After drying, a precursor cast film of Y 3 A1 5 0 12 , a precursor cast film of (Y !_ a Ce a ) 3 A1 5 0 12 and (Y ⁇ Ce b ) 3 Al 5 0 12 were obtained, respectively. The precursor cast film. Next, the precursor cast film is cut according to the design size of the light-emitting concentrator (length 1 and width w as shown in FIG. 5) to obtain a cast film of a corresponding size, in consideration of subsequent sintering of the cast film.
  • the size of the cast film is slightly larger than l*w.
  • the specific value of the size can be determined by theoretical simulation combined with experimental analysis.
  • the sheet take n Q (Y, a Ce precursor casting membrane J 3 A1 5 0 12 are laminated, and are then laminated on both sides as shown in FIG n 3 and n 4 pieces (Y! _ B Ce b ) 3 A1 5 0 12 precursor cast film and n 2 sheets of ⁇ 3 ⁇ 1 5 0 12 precursor cast film.
  • ⁇ .
  • the value of 4 is obtained by comprehensively considering the thickness (d, , d 2 , d 3 , d 4 ) of each layer of the light-emitting concentrator to be obtained, the dimensional shrinkage in the subsequent sintering process, and the Ce at the interface of each layer. Factors such as ion diffusion and subsequent machining allowances are determined in conjunction with theoretical simulations and experimental results. Thereafter, the laminated cast film is placed in an environment of 50 to 90 ° C, and 20-80 is applied.
  • the pressure of MPa allows the laminated cast films to be better combined. Thereafter, the rubber is discharged at a temperature of 500 to 900 ° C for 12 hours, and then cold isostatic pressing at a pressure of 200 to 300 MPa is obtained.
  • a ceramic green body having a multilayer structure The ceramic green body was vacuum sintered at a temperature of 1650 to 1850 ° C for 5 to 30 hours to obtain a multilayer ceramic having a multilayer laminated structure. Compared to Example 1, since the core layer is n located at the center.
  • the core layer in the multilayer structure is composed of an odd-numbered luminescent ceramic layer having different rare earth ion concentrations.
  • the core layer in the multilayer structure is composed of an n-layer (n ⁇ 2, and n is an even number) luminescent ceramic layer having different rare earth ion impurity concentrations, and the closer to the center of the luminescence The higher the rare earth ion concentration of the ceramic layer. Except for this, the configuration of the light-emitting device is almost the same as that of the light-emitting device of the third embodiment, and therefore repeated explanation will be omitted below.
  • the core layer in the multilayer structure is an illuminating ceramic layer having a different rare earth ion impurity concentration in an even layer (two layers in the figure).
  • the core layers 20 and 23 are collectively located at the position closest to the center of the luminescent ceramic layer.
  • the two core layers e.g., the core layer 20 and the core layer 23 in the drawing
  • they are sintered by the luminescent ceramic material containing the same rare earth ion concentration.
  • the impurity concentration of the rare earth element ions in the luminescent ceramic layer is gradually decreased from the center to the both sides in the lamination direction of the multilayer structure. of. If the two core layers at the same distance from the center of the illuminating concentrator 2 are sintered by a luminescent ceramic material containing different concentrations of rare earth ions, the peak of the rare earth ion concentration is no longer located in the luminescent concentrator 2 The center, but appears in the center of the core layer having a higher rare earth ion concentration in the two core layers closest to the center of the light-emitting concentrator 2.
  • the light-emitting concentrator 2 is provided with two core layers 20 and 23 and the rare earth ions in the core layer 20 have a dense concentration greater than that of the rare earth ions in the core layer 23. It should be understood that, in this case, although the peak position of the rare earth ion impurity concentration in the light-emitting concentrator 2 is shifted from the center of the light-emitting concentrator 2, as a whole, The rare earth ion concentration in the light concentrator 2 is still gradually decreased from the inside to the outside in the thickness direction.
  • the transition of the impurity concentration of the rare earth ions in the illuminating concentrator 2 of the present embodiment is more gradual, so that the thermal field distribution in the illuminating concentrator 2 is more uniform, further reducing Thermal effect.
  • FIG. 10 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a fourth embodiment of the present invention.
  • the illuminating device according to the fourth embodiment of the present invention is different from the illuminating device of the first embodiment in that the core layer in the multilayer structure includes two or more layers of different luminescent ceramic layers. Except for this, the configuration of the light-emitting device is almost the same as that of the light-emitting device of the first embodiment, and thus the repeated description will be omitted below.
  • the different luminescent ceramic layers in the core layer are formed from luminescent ceramic materials that are miscellaneous with different rare earth ions.
  • the specific value is based on the intensity of the incident light of the light source, and the luminescence is concentrated.
  • the size of the device, the color temperature and color coordinates of the product, determined by theoretical calculations and experimental analysis) to form the core layer 20, using ( ⁇ , - d Eu d ) 3 Al 5 0 12 (where d 0.001 ⁇ 0.1, specific The value is determined by the theoretical calculation and experimental analysis according to the intensity of the incident light of the light source, the size of the illuminating concentrator, the color temperature and color coordinates of the product, and the ceramic layer 25 is formed. D2, d5, d0 and dl in the figure indicate the thickness of each layer.
  • the Ce ions in the cast film constituting the core layer 20 and the Eu ions in the cast film constituting the core layer 25 are also diffused from the layer to the outer side of the layer, so that according to the present embodiment, In the luminescent concentrator 2 of the example, the impurity concentration of the rare earth ions is still decreasing from the center to both sides as a whole.
  • light having a first wavelength distribution emitted from the light source 1 passes through the light incident surface 211 of the luminescent concentrator 2 and And/or 213 enters the illuminating concentrator, at least a portion of the incident light having the first wavelength distribution is converted into a laser light having a second wavelength distribution by the Ce-doped core layer 20, and is guided to the light by total reflection.
  • the exit surface 212 exits; at least a portion of the incident light having the first wavelength distribution is converted into a laser having a third wavelength distribution by the Eu-doped core layer 25, and is guided to the light exit surface 212 by total reflection.
  • a portion of the received laser light having a second wavelength distribution generated in the core layer 20 may enter the core layer 25 and be secondarily converted into a laser light having a third wavelength distribution, and vice versa.
  • the parameters of various rare earth ions, and the like can adjust the ratio of the light having the first wavelength distribution, the second wavelength distribution, and the third wavelength distribution among the light emitted from the light exit surface 212, thereby obtaining a desired color.
  • Light output. Therefore, the light-emitting device according to the present embodiment can achieve more desirable control of the color temperature and color coordinates of the output light in addition to the advantages of the foregoing embodiments.
  • the manufacturing method of the light-emitting concentrator 2 according to the present embodiment is similar to the preparation methods in the first embodiment and the second embodiment except that the materials, the order and the number of the layers are slightly different, and the like. I won't go into details.
  • a light-emitting device is a modification of the light-emitting device of the first embodiment.
  • the illuminating device of the present embodiment is different from the illuminating device of the first embodiment in that the cladding layers 21 and 22 are composed of A1 2 0 3 ceramics.
  • the cladding composed of A1 2 0 3 ceramic has higher thermal conductivity, so that the thermal effect of the luminescent concentrator in the illuminating device can be more effectively reduced. .
  • a surfactant such as EDS is used as a dispersing agent, and alcohol is used as a solvent, and a vinyl polymer (PVA, PVB or PVC) is used as a binder, and a phthalate plasticizer is selected.
  • a plasticizer As a plasticizer.
  • the sintering temperature of dense A1 20 3 ceramics is higher than that of dense (Y ⁇ Ce J 3 A1 5 0 12 ceramics sintering temperature, in order to sinter at the same temperature to obtain dense A1 2 0 3 & ( Y , _ x Ce J 3 A1 5 0 12 & A1 2 0 3 Ceramics with a multilayer structure, it is necessary to add a sintering aid such as MgO and/or TEOS to the original slurry of A1 2 0 3 ceramics. After the powder is uniformly mixed with the solvent and the dispersant, the binder and plasticization are added.
  • a sintering aid such as MgO and/or TEOS
  • the agent is subjected to secondary ball milling to obtain a slurry; the uniformly mixed slurry is placed in a vacuum system to remove bubbles in the slurry; thereafter, the slurry is formed on a tape casting machine to obtain a cast film, and then at room temperature After drying for 24 h, after drying, a precursor cast film of Al 2 0 3 and a precursor cast film of (Y , x Ce x ) 3 A1 5 0 12 were respectively obtained.
  • a precursor cast film of Al 2 0 3 and a precursor cast film of (Y , x Ce x ) 3 A1 5 0 12 were respectively obtained.
  • the size of the cast film is slightly larger than l*w.
  • the specific value of the size can be determined by theoretical simulation combined with experimental analysis. Then, take n.
  • the precursor casting film of the sheet (Y, x Ce J 3 A1 5 0 12 is laminated, and n is further laminated on both sides, and !1 2 pieces of A1 2 0 3
  • the precursor casts the diaphragm.
  • ⁇ . ⁇ The value of 2 is obtained by comprehensively considering the thickness of each layer (cU, dd 2 ) of the illuminating concentrator to be obtained, the dimensional shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the core layer and the cladding, and the subsequent machining. Factors such as balance are determined by combining theoretical simulations and experimental results. Thereafter, the laminated cast film is placed in an environment of 50 to 90 ° C, and a pressure of 20 to 80 MPa is applied, so that the stacked cast films can be well bonded.
  • the rubber discharge treatment was carried out at a temperature of 500 to 900 ° C for 12 hours, followed by cold isostatic pressing at a pressure of 200 to 300 MPa to obtain a ceramic green body having a multilayer structure.
  • the ceramic green body was vacuum sintered at a temperature of 1650 to 1850 ° C for 5 to 30 hours to obtain a multilayer ceramic having a multilayer laminated structure.
  • the Ce ions originally located in the ⁇ ⁇ ( ⁇ x Ce J 3 A1 5 0 12 cast film (the core layer 20 after sintering) are cast into the A1 2 0 3 film on both sides (sintered after sintering) Diffusion in the cladding layers 21 and 22).
  • the Ce ion concentration decreases from the center to the surface.
  • the multilayer ceramic obtained by sintering is polished and covered at one end of the multilayer ceramic.
  • a highly reflective film or a total reflection film, a light-emitting concentrator 2 for a light-emitting device according to a fifth embodiment of the present invention is obtained.
  • the cladding of the light-emitting concentrator 2 may also be composed of Al 2 0 3 ceramic as described above.

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Abstract

Provided are a light collector (2), a light emitting device, and a projection light source. The light collector (2) has a light emergent surface (212), a light incident surface (211, 213), and a side surface (214) opposite the light emergent surface (212). The light collector (2) has a stacked multilayer structure. The multilayer structure comprises at least one core layer (20) located at the center and a cladding layer (21, 22) stacked on two sides of the at least one core layer (20). Light having a first wavelength distribution can penetrate the cladding layer (21, 22), and the at least one core layer (20) can convert the light having the first wavelength distribution into a light having a second wavelength distribution. The side surface (214) is provided with a light blocking element for preventing light leakage, wherein an area of the light incident surface (211, 213) is greater than that of the light emergent surface (212). The light emitting device and the projection light source are provided with the light collector (2) and a light source (11). The invention can suppress a drastic change in the temperature of the light collector (2), thereby preventing a device fault caused by a drastic change in an internal temperature. Furthermore, the invention provides a more even distribution of the thermal field inside the light collector (2), reducing thermal effects.

Description

光聚集器、 发光设备及投影光源 技术领域  Light concentrator, illuminating device and projection light source
[0001] 本发明涉及发光聚集器、 发光设备及投影光源。 具体地, 本发明涉及热场均匀 分布的发光聚集器和使用这样的发光聚集器的发光设备及投影光源。  [0001] The present invention relates to a light concentrator, a light emitting device, and a projection light source. In particular, the present invention relates to a light-emitting concentrator in which a thermal field is uniformly distributed, and a light-emitting device and a projection light source using such a light-emitting concentrator.
背景技术  Background technique
[0002] 近年来, 在聚光照明、 数字光投影等领域, 如何获得具有更高亮度并且更节能 的光源一直是研究的热点。 其中, 使用将更短波长的光在高度透明的发光材料 中转换为更长波长的光的波长转换器的发光设备成为了一个主要的研究方向。  [0002] In recent years, in the field of spotlight illumination, digital light projection, etc., how to obtain a light source with higher brightness and more energy saving has been a research hotspot. Among them, a light-emitting device using a wavelength converter that converts light of a shorter wavelength into a longer-wavelength light in a highly transparent luminescent material has become a major research direction.
[0003] 例如, 飞利浦公司幵发的 HLD (High Lumen Density) 光源就是利用高度透明 的发光材料将具有较短波长的光转换为较长波长的光, 并在小面积表面对较长 波长进行提取, 由此实现了高亮度、 小光学扩展量的光输出。 在该光源中, 高 度透明的发光材料同吋起到聚光和波长转换两个作用, 可以被称为发光聚集器 技术问题  [0003] For example, Philips HLD (High Lumen Density) light source uses a highly transparent luminescent material to convert light with shorter wavelengths into longer wavelength light and extract longer wavelengths on a small area surface. Thus, a high-brightness, small optical expansion light output is achieved. In this light source, the highly transparent luminescent material serves as both condensing and wavelength converting, which may be called a luminescent concentrator.
[0004] 如上所述的发光聚集器在波长转换过程中, 由于斯托克斯位移, 导致热量在其 内部聚集, 导致较严重的热效应。 在现有技术中, 通常使用周围冷却系统对发 光聚集器进行冷却。 但这种方式会造成发光聚集器内部的热场分布不均匀, 产 生较严重的热效应, 从而影响器件的光学性能和机械性能。  [0004] The light-emitting concentrator as described above causes heat to accumulate inside thereof due to the Stokes shift during wavelength conversion, resulting in a more severe thermal effect. In the prior art, the concentrating concentrator is typically cooled using an ambient cooling system. However, this method causes uneven distribution of the thermal field inside the illuminating concentrator, which produces a more serious thermal effect, thereby affecting the optical and mechanical properties of the device.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0005] 针对上述问题, 本发明期望提供一种内部温度过渡均匀并且热效应减小的发光 聚集器以及使用该发光聚集器的发光设备。  In view of the above problems, the present invention is intended to provide a light-emitting concentrator in which internal temperature transition is uniform and heat effect is reduced, and a light-emitting device using the same.
[0006] 根据本发明的实施例, 公幵了一种发光聚集器, 所述发光聚集器具有光出射表 面、 光入射表面以及与所述光出射表面相对的对侧表面, 并且所述发光聚集器 具有层叠的多层结构。 所述多层结构包括位于中心的至少一层芯层和层叠在所 述至少一层芯层两侧的包层, 所述包层能够透过具有第一波长分布的光, 所述 至少一层芯层能够将具有所述第一波长分布的光转换为具有第二波长分布的光 。 所述对侧表面设置有防止光线漏出的遮光元件, 并且所述光入射表面的面积 大于所述光出射表面的面积。 According to an embodiment of the present invention, there is disclosed a light-emitting concentrator having a light exit surface, a light incident surface, and a contralateral surface opposite to the light exit surface, and the light-emitting gather The device has a stacked multilayer structure. The multilayer structure includes at least one core layer located at a center and a cladding layer laminated on both sides of the at least one core layer, the cladding layer being capable of transmitting light having a first wavelength distribution, At least one core layer is capable of converting light having the first wavelength distribution into light having a second wavelength distribution. The opposite side surface is provided with a light blocking member that prevents light from leaking out, and an area of the light incident surface is larger than an area of the light exit surface.
[0007] 优选地, 在所述发光聚集器中, 当所述至少一层芯层为奇数层吋, 稀土元素离 子的惨杂浓度在所述多层结构的层叠方向上从所述发光聚集器的中心向两侧逐 渐降低; 当所述至少一层芯层为偶数层吋, 稀土元素离子的惨杂浓度在所述多 层结构的层叠方向上从所述发光聚集器的中心向两侧逐渐降低或者从最靠近所 述发光聚集器的所述中心的一个芯层的中心向两侧逐渐降低。  [0007] Preferably, in the light-emitting concentrator, when the at least one core layer is an odd-numbered layer, the impurity concentration of the rare earth element ions is from the light-emitting concentrator in a stacking direction of the multilayer structure The center of the layer gradually decreases toward both sides; when the at least one core layer is an even layer, the impurity concentration of the rare earth element ions gradually increases from the center of the light-emitting concentrator to both sides in the stacking direction of the multilayer structure Decreasing or gradually decreasing from the center of one of the core layers closest to the center of the light-emitting concentrator to both sides.
[0008] 在一些实施例中, 优选地, 所述至少一层芯层是由两层或两层以上的具有不同 的稀土元素离子惨杂浓度的发光陶瓷层构成的。 在另一些实施例中, 优选地, 所述至少一层芯层包括两层或两层以上的不同的发光陶瓷层。 例如, 各发光陶 瓷层可以是由惨杂有不同的稀土元素离子的发光陶瓷材料形成的。  In some embodiments, preferably, the at least one core layer is composed of two or more layers of luminescent ceramic layers having different concentrations of rare earth ions. In other embodiments, preferably, the at least one core layer comprises two or more layers of different luminescent ceramic layers. For example, each of the luminescent ceramic layers may be formed of a luminescent ceramic material that is miscible with different rare earth ions.
[0009] 优选地, 所述遮光元件可以是镜面反射膜。 此外, 所述发光聚集器还可以额外 地设置有反射元件, 所述反射元件被布置在除了所述光入射表面和所述光出射 表面之外的至少一个表面上。 例如, 所述反射元件是反射率大于 95%的镜面反射 层; 或者, 所述反射元件是反射率大于 90%的漫反射材料层。  [0009] Preferably, the shading element may be a specular reflection film. Furthermore, the light-emitting concentrator may additionally be provided with a reflective element which is disposed on at least one surface other than the light incident surface and the light exit surface. For example, the reflective element is a specularly reflective layer having a reflectance greater than 95%; or the reflective element is a layer of diffusely reflective material having a reflectivity greater than 90%.
[0010] 优选地, 在所述发光聚集器的所述光入射表面还设置有仅能透过具有所述第一 光学分布的光的光学膜。 在一些实施中, 所述光学膜可以是能够透过具有所述 第一波长分布的光的二向色膜。 可替代地, 所述光学膜可以是只能够透过以预 定范围的入射角入射的具有所述第一波长分布的光的角度选择滤光膜。  [0010] Preferably, the light incident surface of the light-emitting concentrator is further provided with an optical film that can only transmit light having the first optical distribution. In some implementations, the optical film can be a dichroic film that is permeable to light having the first wavelength distribution. Alternatively, the optical film may be an angle selective filter film that is only permeable to light having the first wavelength distribution incident at a predetermined range of incident angles.
[0011] 在一些实施例中, 所述发光聚集器可以具有楔形形状, 使得所述光出射表面的 面积小于与其相对的表面的面积。  [0011] In some embodiments, the illuminating concentrator may have a wedge shape such that the area of the light exit surface is smaller than the area of the surface opposite thereto.
[0012] 优选地, 所述包层是 A1 20 3陶瓷层。 [0012] Preferably, the cladding layer is an A1 2 0 3 ceramic layer.
[0013] 优选地, 在所述光出射表面设置有与所述光学聚集器光学连接的光耦合元件, 所述光耦合元件的折射率等于或低于所述发光聚集器的所述芯层和所述包层中 的最低折射率。  [0013] Preferably, the light exiting surface is provided with an optical coupling element optically coupled to the optical concentrator, the optical coupling element having a refractive index equal to or lower than the core layer of the illuminating concentrator and The lowest refractive index in the cladding.
[0014] 本发明还公幵了一种发光设备, 所述发光设备设置有如上所述的任意发光聚集 器和光源。 所述光源朝着所述发光聚集器的所述光入射表面布置, 所述光源能 够发出具有所述第一波长分布的光。 [0014] The present invention also discloses a light emitting device provided with any of the light emitting aggregators and light sources as described above. The light source is disposed toward the light incident surface of the light concentrator, the light source capable Light having the first wavelength distribution is emitted.
[0015] 本发明还公幵了一种投影光源, 所述投影光源设置有如上所述的任意发光聚集 器和光源。  The present invention also discloses a projection light source provided with any of the illumination aggregators and light sources as described above.
发明的有益效果  Advantageous effects of the invention
有益效果  Beneficial effect
[0016] 根据本发明, 发光聚集器具有包含芯层和包层的多层陶瓷结构, 并且在所述多 层结构中, 芯层为惨杂有稀土元素的发光陶瓷, 包层为晶体结构和物理化学性 质均与芯层相近但热导率更高的不发光陶瓷。 由于上述多层结构, 在发光过程 中产生热量的芯层并不会与周围冷却系统直接接触, 包层在芯层与周围冷却系 统之间起到了抑制芯层温度产生剧烈变化的作用, 防止了因内部温度剧烈变化 而导致的器件故障。 此外, 由于稀土元素离子的惨杂浓度在高度方向上从中心 向两侧逐渐递减, 所以使得发光聚集器内部发热的量子点的分布更加均匀, 进 而使得热场分布更加均匀, 减小了热效应。 应当理解, 本发明的有益效果不限 于上述效果, 而可以是本文中说明的任何有益效果。  [0016] According to the present invention, a light-emitting concentrator has a multilayer ceramic structure including a core layer and a cladding layer, and in the multilayer structure, the core layer is a luminescent ceramic having a rare earth element, the cladding is a crystal structure and Non-luminescent ceramics with similar physicochemical properties to the core layer but higher thermal conductivity. Due to the above multilayer structure, the core layer which generates heat during the illuminating process does not directly contact the surrounding cooling system, and the cladding layer acts to suppress the temperature of the core layer from being drastically changed between the core layer and the surrounding cooling system, thereby preventing Device failure due to drastic changes in internal temperature. In addition, since the impurity concentration of the rare earth element ions gradually decreases from the center to the both sides in the height direction, the distribution of the quantum dots which generate heat inside the light-emitting concentrator is more uniform, thereby making the heat field distribution more uniform and reducing the thermal effect. It should be understood that the benefits of the present invention are not limited to the above effects, but may be any of the benefits described herein.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0017] 图 1是示出了根据本发明第一实施例的的发光设备的结构示意图。  1 is a schematic structural view showing a light emitting apparatus according to a first embodiment of the present invention.
[0018] 图 2是图 1所示的发光设备中的发光聚集器的多层结构的侧示图和俯视图。 2 is a side view and a plan view of a multilayer structure of a light-emitting concentrator in the light-emitting device shown in FIG. 1.
[0019] 图 3是示出了根据本发明第一实施例的的发光设备的变型例的结构示意图。 3 is a schematic structural view showing a modification of the light emitting apparatus according to the first embodiment of the present invention.
[0020] 图 4是示出了根据本发明第一实施例的的发光设备的发光聚集器中沿陶瓷厚度 方向的 Ce离子浓度分布示意图。 4 is a schematic view showing a Ce ion concentration distribution in a ceramic thickness direction in a light-emitting concentrator of a light-emitting device according to a first embodiment of the present invention.
[0021] 图 5是根据本发明第二实施例的的发光设备的发光聚集器的多层结构的侧示图 和俯视图。 [0021] FIG. 5 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a second embodiment of the present invention.
[0022] 图 6是示出了根据本发明第二实施例的的发光设备的发光聚集器中沿陶瓷厚度 方向的 Ce离子浓度分布示意图。  6 is a schematic view showing a Ce ion concentration distribution in a ceramic thickness direction in a light-emitting concentrator of a light-emitting device according to a second embodiment of the present invention.
[0023] 图 7是根据本发明第三实施例的的发光设备的发光聚集器的多层结构的侧示图 和俯视图。 7 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a third embodiment of the present invention.
[0024] 图 8是示出了根据本发明第三实施例的的发光设备的发光聚集器中沿陶瓷厚度 方向的 Ce离子浓度分布示意图。 8 is a view showing a ceramic thickness in a light-emitting concentrator of a light-emitting device according to a third embodiment of the present invention. Schematic diagram of the Ce ion concentration distribution in the direction.
[0025] 图 9是示出了根据本发明第三实施例的的发光设备的另一发光聚集器中沿陶瓷 厚度方向的 Ce离子浓度分布示意图。 9 is a schematic view showing a concentration distribution of Ce ions in a ceramic thickness direction in another light-emitting concentrator of a light-emitting device according to a third embodiment of the present invention.
[0026] 图 10是根据本发明第四实施例的的发光设备的发光聚集器的多层结构的侧示图 和俯视图。 10 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a fourth embodiment of the present invention.
本发明的实施方式 Embodiments of the invention
[0027] 下面, 将参照附图详细说明根据本发明的各具体实施例。 需要强调的是, 附图 中的所有尺寸仅是示意性的并且不一定是按照真实比例图示的, 因而不具有限 定性。 例如, 应当理解, 图示出的发光聚集器的多层结构中各层的厚度以及厚 度比例并不是按照实际的尺寸和比例示出的, 仅是为了图示方便。  [0027] Hereinafter, various embodiments in accordance with the present invention will be described in detail with reference to the accompanying drawings. It is to be emphasized that all dimensions in the figures are merely schematic and are not necessarily illustrated in true scale and are therefore not limiting. For example, it should be understood that the thicknesses and thickness ratios of the layers in the multilayer structure of the illustrated light-emitting concentrator are not shown in actual size and scale, and are merely for convenience of illustration.
[0028] 第一实施例  First Embodiment
[0029] 图 1是示出了根据本发明第一实施例的的发光设备的结构示意图。 如图 1中所示 , 发光设备包括光源 1和发光聚集器 2。 光源 1包括基板 10和布置在基板上的至少 一个固态光源 11。 固态光源 11原则上可以是任何类型的点光源, 例如发光二极 管 (LED) 、 激光二极管或者有机发光二极管 (OLED) 等。 在设置有多个固态 光源 11的情况下, 多个固态光源 11以二维发光阵列的形式布置。 在本示例中, 将以激光二极管构成的激光发光阵列为例进行说明, 并且如图 1所示, 从发光阵 列中的多个固态光源 11发出的光照射至发光聚集器 2的光入射表面 211。 此外, 还可以将多个激光二极管发出的光导入光纤, 然后分别引导至发光聚集器 2的光 入射表面, 或者, 可以通过光整形装置将来自光源 1的光以特定的光分布引导至 发光聚集器 2的光入射表面。 各固态光源 11能够发出具有第一波长分布的光, 诸 如但是不限于紫外光、 蓝色光、 绿色光、 黄色光或红色光。 例如, 当固体光源 1 1为蓝色光源吋, 第一波长分布为 300~550nm, 优选为 380~480nm。 此外, 当固 体光源 11为紫外 (UV) 或者紫色光源吋, 第一波长分布为 420nm以下。 此外, 当固体光源 11为红色光源吋, 第一波长分布为 600~800nm。 当包含多个固态光源 11的情况下, 多个固态光源 11也可以是两种或者多种不同颜色的固态光源 11。  1 is a schematic structural view showing a light emitting apparatus according to a first embodiment of the present invention. As shown in Fig. 1, the light-emitting device includes a light source 1 and a light-emitting concentrator 2. The light source 1 includes a substrate 10 and at least one solid state light source 11 disposed on the substrate. The solid state light source 11 can in principle be any type of point source, such as a light emitting diode (LED), a laser diode or an organic light emitting diode (OLED). In the case where a plurality of solid-state light sources 11 are provided, the plurality of solid-state light sources 11 are arranged in the form of a two-dimensional light-emitting array. In the present example, a laser light emitting array composed of a laser diode is taken as an example, and as shown in FIG. 1, light emitted from a plurality of solid-state light sources 11 in the light-emitting array is irradiated to the light incident surface 211 of the light-emitting concentrator 2. . In addition, it is also possible to introduce light emitted from a plurality of laser diodes into the optical fiber and then respectively guide them to the light incident surface of the light-emitting concentrator 2, or the light from the light source 1 can be guided to a luminescent concentration by a specific light distribution by a light shaping device. The light of the device 2 is incident on the surface. Each solid state light source 11 is capable of emitting light having a first wavelength distribution such as, but not limited to, ultraviolet light, blue light, green light, yellow light, or red light. For example, when the solid-state light source 1 1 is a blue light source 吋, the first wavelength distribution is 300 to 550 nm, preferably 380 to 480 nm. Further, when the solid-state light source 11 is an ultraviolet (UV) or violet light source, the first wavelength distribution is 420 nm or less. Further, when the solid-state light source 11 is a red light source, the first wavelength distribution is 600 to 800 nm. When a plurality of solid state light sources 11 are included, the plurality of solid state light sources 11 may also be solid state light sources 11 of two or more different colors.
[0030] 如图 2所示, 发光聚集器 2—般是具有在相互垂直的方向上延伸的高度11、 宽度 W和长度 L的棒状或者杆状装置。 这里, 将图 1中的水平方向称为发光聚集器 2的 长度方向, 将图 1中的垂直方向称为发光聚集器 2的高度方向, 将图 1中的与纸面 垂直的方向称为发光聚集器 2的宽度方向。 发光聚集器 2具有多层陶瓷层叠结构 , 其中, 芯层和包层沿着发光聚集器 2的高度方向层叠。 从光源 1发出的入射光 照射至发光聚集器 2的最外侧包层的外表面。 换言之, 发光聚集器 2的最外侧包 层的外表面是发光聚集器 2的光入射表面。 图 1示出了发光聚集器 2沿高度方向依 次层叠有包层 21、 芯层 20和包层 22的三层层叠结构, 并且包层 21的外表面 211是 发光聚集器 2的光入射表面。 应当理解, 在发光聚集器 2的两侧均可以设置光源 1 , 使得入射光从发光聚集器 2的两侧同吋入射。 在此情况下, 包层 21的外表面 21 1和包层 22的外表面 213均是发光聚集器 2的光入射表面。 发光聚集器 2的沿高度 方向和宽度方向延伸的一个端面 212是光出射表面。 发光聚集器 2的与光出射表 面 212相对的另一个端面 212被称为对侧表面, 并且设置有诸如镜面反射膜等遮 光元件, 以确保发光聚集器 2中的光线不会从对侧表面 214漏出。 应当理解, 发 光聚集器 2是棒状或者杆状的装置, 因此, 光出射表面 212和对侧表面 214的面积 显然小于光入射表面 211和 213的面积。 此外, 优选地, 在发光聚集器 2的除了光 入射表面、 光出射表面和对侧表面的其它表面, 也可以设置上述遮光元件, 以 防止在发光聚集器 2中行进的光束在这些表面处因未发生全反射而漏出。 可替代 地, 也可以对发光聚集器 2的除了光入射表面、 光出射表面和对侧表面的其它表 面进行粗糙化, 以进一步增大光束发生全反射的概率。 [0030] As shown in FIG. 2, the illuminating concentrator 2 generally has a height 11 and a width extending in mutually perpendicular directions. W and length L rod or rod-like device. Here, the horizontal direction in FIG. 1 is referred to as the longitudinal direction of the light-emitting concentrator 2, the vertical direction in FIG. 1 is referred to as the height direction of the light-emitting concentrator 2, and the direction perpendicular to the paper surface in FIG. The width direction of the concentrator 2. The light-emitting concentrator 2 has a multilayer ceramic laminate structure in which a core layer and a cladding layer are stacked in the height direction of the light-emitting concentrator 2. The incident light emitted from the light source 1 is irradiated to the outer surface of the outermost cladding of the light-emitting concentrator 2. In other words, the outer surface of the outermost cladding of the light-emitting concentrator 2 is the light incident surface of the light-emitting concentrator 2. 1 shows a three-layer laminated structure in which a light-emitting concentrator 2 is sequentially laminated with a cladding layer 21, a core layer 20, and a cladding layer 22 in a height direction, and an outer surface 211 of the cladding layer 21 is a light incident surface of the light-emitting concentrator 2. It should be understood that the light source 1 may be disposed on both sides of the light-emitting concentrator 2 such that incident light is incident from the sides of the light-emitting concentrator 2 at the same time. In this case, both the outer surface 21 1 of the cladding 21 and the outer surface 213 of the cladding 22 are the light incident surfaces of the light-emitting concentrator 2. One end surface 212 of the light-emitting concentrator 2 extending in the height direction and the width direction is a light-emitting surface. The other end face 212 of the illuminating concentrator 2 opposite to the light exit surface 212 is referred to as a contralateral surface, and is provided with a shading element such as a specular reflection film to ensure that light in the illuminating concentrator 2 does not escape from the opposite side surface 214. leakage. It should be understood that the illuminating concentrator 2 is a rod-like or rod-shaped device, and therefore, the areas of the light exit surface 212 and the opposite side surface 214 are apparently smaller than the areas of the light incident surfaces 211 and 213. Further, preferably, the above-described light shielding members may be provided on the other surfaces of the light-emitting concentrator 2 except the light incident surface, the light exit surface, and the opposite side surface to prevent the light beams traveling in the light-emitting concentrator 2 from being at these surfaces No total reflection occurred and leaked out. Alternatively, other surfaces of the light-emitting concentrator 2 other than the light incident surface, the light exit surface, and the opposite side surface may be roughened to further increase the probability that the light beam is totally reflected.
[0031] 应当理解, 发光聚集器 2的垂直于长度方向的横截面可以具有多种形状, 例如 正方形、 矩形、 圆形、 三角形、 多边形等。 此外, 根据需要, 也可以将本实施 例中的发光聚集器 2设置为使其垂直于长度方向的横截面的面积随着靠近光出射 表面而逐渐减小, 以使光出射表面的面积小于发光聚集器 2的与该光出射表面相 对的表面的面积。 例如, 发光聚集器 2可以具有楔形或截头椎体的形状。 这样能 够使光出射表面的面积进一步减小, 以实现更好的出光效率。  [0031] It should be understood that the cross section perpendicular to the length direction of the illuminating concentrator 2 may have various shapes such as a square, a rectangle, a circle, a triangle, a polygon, and the like. In addition, the light-emitting concentrator 2 in the present embodiment may be disposed such that the area of the cross-section perpendicular to the longitudinal direction gradually decreases as it approaches the light-emitting surface, so that the area of the light-emitting surface is smaller than that of the light-emitting surface. The area of the surface of the concentrator 2 opposite the light exit surface. For example, the illuminating concentrator 2 may have the shape of a wedge or truncated vertebral body. This enables the area of the light exit surface to be further reduced to achieve better light extraction efficiency.
[0032] 在发光聚集器 2的多层层叠结构中, 芯层 20由能够将入射的第一波长分布的光 转换为第二波长分布的光的发光陶瓷材料制成。 例如, 芯层 20是惨杂有稀土元 素的钇铝石榴石 (YAG, Y 3A1 50 12) 或镥铝石榴石 (LuAG, Lu 3A1 50 12) 陶瓷 。 稀土元素的惨杂离子可以为惨杂离子可以为 Ce 3+、 Pr 3+、 Nd 3+、 Sm 3+、 Eu 3+ 、 Tb 3+、 Dy 3+、 Ho 3+、 Er 3+、 Tm 3+、 Yb 3+ [0032] In the multilayer laminated structure of the light-emitting concentrator 2, the core layer 20 is made of a luminescent ceramic material capable of converting light of the incident first wavelength distribution into light of the second wavelength distribution. For example, the core layer 20 is a yttrium aluminum garnet (YAG, Y 3 A1 5 0 12 ) or yttrium aluminum garnet (LuAG, Lu 3 A1 5 0 12 ) ceramic having a rare earth element. . The rare ions of the rare earth element may be cryptic ions such as Ce 3+ , Pr 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Ho 3+ , Er 3+ , Tm 3+ , Yb 3+
等中的一种或多种。 其中, 优选使用 Ce 3+。 包层 21和 22是晶体结构和物理化学 性质均与芯层相近但热导率更高的不发光陶瓷。 在此例中, 包层 21和 22是由 YA G陶瓷形成的。 需要注意的是, 用于形成包层 21和 22的 YAG陶瓷中本来未惨杂上 述稀土元素, 但是在发光聚集器 2的制备过程中 (详见下文) , 芯层 20中含有的 惨杂离子向包层 21和 22中扩散, 使得在发光聚集器 2的多层层叠结构的层叠方向 上, 稀土元素的惨杂浓度从芯层的中心向外侧逐渐降低。  One or more of the others. Among them, Ce 3+ is preferably used. The cladding layers 21 and 22 are non-luminescent ceramics having a crystal structure and a physicochemical property similar to the core layer but having a higher thermal conductivity. In this example, claddings 21 and 22 are formed of YA G ceramic. It should be noted that the above rare earth elements are not originally miscellaneous in the YAG ceramics for forming the cladding layers 21 and 22, but during the preparation of the light-emitting concentrator 2 (see below), the cryptic ions contained in the core layer 20 The diffusion into the cladding layers 21 and 22 causes the impurity concentration of the rare earth element to gradually decrease from the center to the outer side of the core layer in the lamination direction of the multilayer laminated structure of the light-emitting concentrator 2.
[0033] 具有第一波长分布的入射光从光入射表面 211和 /或 213进入发光聚集器 2内, 透 过包层 21或 22到达芯层 20。 具有第一波长分布的入射光的至少一部分在芯层 20 中被转换成具有第二波长分布的受激光。 受激光在发光聚集器内传播, 并在对 侧表面 214的遮光元件以及不同介质间的全反射作用下被导向光出射表面 212, 最终从光出射表面 212出射。  Incident light having a first wavelength distribution enters the light-emitting concentrator 2 from the light incident surface 211 and/or 213, and passes through the cladding 21 or 22 to reach the core layer 20. At least a portion of the incident light having the first wavelength distribution is converted into a laser light having a second wavelength distribution in the core layer 20. The laser is propagating within the illuminating concentrator and directed to the light exit surface 212 under the total reflection between the shading elements of the side surface 214 and the different media, and ultimately exits the light exit surface 212.
[0034] 此外, 在发光聚集器 2的除了光入射表面和光出射表面之外的至少一个表面上 可以额外地设置有反射元件。 反射元件 3可以为镜面反射层, 如高反银层或高反 铝层, 反射率优选大于 95%; 也可以为如 Ti0 2、 BaSO ^Al 20 3等漫反射材料形 成的漫反射材料层, 反射率优选为大于 90%。 这样的反射元件与发光聚集器 2非 光学接触, 将不满足全反射条件而从发光聚集器 2逸出的光反射回发光聚集器 2 并最终导向光出射表面 212, 提高了光的传导效率。 图 3中示出了在光源 1仅从光 入射表面 211侧照射上述发光聚集器 2的情况下, 在包层 22的外表面 213上和端面 214设置有反射元件 3的示例。 此外, 为了提高光的提取效率, 在光出射表面 212 处可以设置有光耦合元件或光耦合结构。 光耦合元件可以是光学胶、 透镜或者 透镜阵列, 其折射率等于或低于发光聚集器 2的各芯层和各包层的最低折射率, 并且与光学聚集器光学连接。 另外, 可在发光聚集器 2的光入射面处设置或涂镀 仅能透过具有第一波长分布的光的光学膜。 例如, 所述光学膜可以是二向色膜 , 使得从光源发出的第一波长分布的入射光能够通过二向色膜进入发光聚集器 内, 而在发光聚集器内生成的第二波长分布的受激光在二向色膜片处发生全反 射。 或者, 可在抛光的陶瓷的光入射面 (211, 213) 处镀角度选择滤光膜, 其 只能透过以预定范围的入射角入射的第一波长分布的光束。 例如, 所述角度选 择滤光膜可以是只能透过以 -8.5°至 +8.5°范围内的入射角入射的蓝光的角度选择 蓝光透射膜。 应当理解, 上述入射角度的范围仅仅是示例, 也可以是其它的角 度范围。 [0034] Furthermore, a reflective element may be additionally provided on at least one surface of the light-emitting concentrator 2 other than the light incident surface and the light exit surface. The reflective element 3 may be a specular reflective layer, such as a high anti-silver layer or a high anti-aluminum layer, and the reflectance is preferably greater than 95%; and may also be a diffuse reflective material layer formed of a diffuse reflective material such as Ti0 2 or BaSO ^Al 2 0 3 The reflectance is preferably greater than 90%. Such a reflective element is in non-optical contact with the illuminating concentrator 2, reflecting light escaping from the illuminating concentrator 2, which does not satisfy the total reflection condition, back to the illuminating concentrator 2 and finally to the light exiting surface 212, improving the light transmission efficiency. In the case where the light source 1 illuminates the above-described light-emitting concentrator 2 only from the light incident surface 211 side, an example in which the reflective member 3 is provided on the outer surface 213 of the cladding 22 and the end surface 214 is shown in FIG. Further, in order to improve the light extraction efficiency, an optical coupling element or an optical coupling structure may be disposed at the light exit surface 212. The optical coupling element may be an optical glue, lens or lens array having a refractive index equal to or lower than the lowest refractive index of each core layer and each cladding of the light-emitting concentrator 2, and optically coupled to the optical concentrator. Further, an optical film capable of transmitting only light having a first wavelength distribution may be disposed or coated at a light incident surface of the light-emitting concentrator 2. For example, the optical film may be a dichroic film such that incident light of a first wavelength distribution emitted from the light source can enter the light-emitting concentrator through the dichroic film, and a second wavelength distribution generated within the light-emitting concentrator The laser is totally reflected at the dichroic diaphragm. Alternatively, a filter film may be selected at an angle of incidence on the light incident surface (211, 213) of the polished ceramic, It is only possible to transmit a light beam of a first wavelength that is incident at a predetermined range of incident angles. For example, the angle selective filter film may be a blue light transmissive film selected only by the angle of blue light incident at an incident angle in the range of -8.5° to +8.5°. It should be understood that the range of the above incident angles is merely an example, and may be other angle ranges.
[0035] 现有技术中的发光聚集器具有单层结构, 因而当发光聚集器的外表面接触周围 冷却系统吋, 发光聚集器的外表面被急剧降温, 使得发光聚集器的内外温差巨 大, 温度急剧变化, 这不仅会导致发光聚集器内部的热场分布不均, 而且还可 能导致器件由于急剧的温度变化而发生破碎。 而在本发明中, 由于发光聚集器 2 具有多层结构, 当使用周围冷却系统对发光聚集器 2进行冷却吋, 具有优良导热 性能的包层与周围冷却系统直接接触, 在发光过程中产生热量的芯层并不会与 周围冷却系统直接接触。 包层在芯层与周围冷却系统之间起到了抑制芯层温度 产生剧烈变化的作用, 实现了芯层的温度与周围冷却系统的温度之间的缓和过 渡, 防止了因内部温度剧烈变化而导致的器件故障。 此外, 在波长转换过程中 , 发光聚集器 2内的稀土元素离子可以被看做是因斯托克斯红移而产生热量的量 子点。 在本发明中, 发光聚集器 2内的稀土元素离子的惨杂浓度在高度方向上从 中心向两侧逐渐递减。 也即是说, 产生热量的量子点的分布从中心向两侧逐渐 递减。 因此, 发光聚集器 2内部的热场分布得更加均匀, 减小了热效应。  [0035] The prior art light-emitting concentrator has a single-layer structure, so that when the outer surface of the light-emitting concentrator contacts the surrounding cooling system, the outer surface of the light-emitting concentrator is drastically cooled, so that the temperature difference between the inside and the outside of the light-emitting concentrator is large, and the temperature A sharp change, which not only causes uneven distribution of the thermal field inside the illuminating concentrator, but also may cause the device to break due to rapid temperature changes. In the present invention, since the illuminating concentrator 2 has a multi-layer structure, when the illuminating concentrator 2 is cooled using the surrounding cooling system, the cladding having excellent thermal conductivity is in direct contact with the surrounding cooling system, generating heat during the illuminating process. The core layer does not come into direct contact with the surrounding cooling system. The cladding acts between the core layer and the surrounding cooling system to suppress the drastic change of the core temperature, achieving a gentle transition between the temperature of the core layer and the temperature of the surrounding cooling system, preventing the internal temperature from drastically changing. Device failure. Further, during the wavelength conversion process, the rare earth element ions in the luminescent concentrator 2 can be regarded as the quantum points at which heat is generated by the Stokes red shift. In the present invention, the impurity concentration of the rare earth element ions in the luminescent concentrator 2 gradually decreases from the center to the both sides in the height direction. That is to say, the distribution of the quantum dots generating heat gradually decreases from the center to the both sides. Therefore, the thermal field inside the illuminating concentrator 2 is more evenly distributed, reducing the thermal effect.
[0036] 下面, 将简要说明发光聚集器 2的具体制备方法。  [0036] Next, a specific preparation method of the light-emitting concentrator 2 will be briefly explained.
[0037] 分别按照 Y 3A1 50 12和(¥ !_xCe J 3A1 50 12 (其中 x=0.001~0.1, 具体的值根据光源 的入射光的强度、 发光聚集器的尺寸、 对于产品的色温及色坐标的要求, 通过 理论计算和实验分析确定) 的化学计量配比称量高纯度的商业 A1 20 3粉体、 Y 20 3粉体和 CeO 2 [0037] according to Y 3 A1 5 0 12 and (¥ !_ x Ce J 3 A1 5 0 12 (where x = 0.001 ~ 0.1, the specific value according to the intensity of the incident light of the light source, the size of the illuminating concentrator, The color temperature and color coordinates of the product, determined by theoretical calculations and experimental analysis. Stoichiometric ratio Weigh high-purity commercial A1 2 0 3 powder, Y 2 0 3 powder and CeO 2
粉体。 然后, 通过采用流延成型工艺制备陶瓷坯体。 其中, 选用 EDS等表面活性 剂作为分散剂, 选用酒精作为溶剂, 选用乙烯基聚合物 (PVA、 PVB或 PVC) 等 作为粘结剂, 选用邻苯二甲酸酯类塑化剂作为塑化剂。 制备具体步骤如下: 将 原料粉体与溶剂、 分散剂装入球磨机进行球磨混合; 混和均匀后, 再加入粘结 剂和塑化剂进行二次球磨混料, 得到浆料; 然后, 将混合均匀的浆料置于真空 系统中, 排除浆料中的气泡; 此后, 使浆料在流延成型机上成型, 得到流延膜 , 之后常温干燥 24h。 干燥后, 分别获得了 Y 3A1 50 12的前驱体流延膜和 C^— xCe J 3A1 50 12的前驱体流延膜。 接下来, 按照发光聚集器的设计尺寸 (如图 2中所示的 长度 1和宽度 w) 裁剪前驱体流延膜, 得到相应尺寸的流延膜片, 考虑到流延膜 片在后续的烧结过程中的尺寸收缩和后续机械加工余量, 流延膜片的尺寸要略 大于 l*w。 尺寸的具体值可以通过理论模拟结合实验分析而确定。 然后, 取!!。 片 (Y ,_xCe x) 3A1 50 12的前驱体流延膜片进行层叠, 并且在两边分别再层叠 n ,和11 2 片¥ 3 1 50 12的前驱体流延膜片。 其中, η。、 η
Figure imgf000010_0001
2的值是通过综合考虑想要获 得的发光聚集器的各层厚度 (cU、 d d 2) 、 后续的烧结过程中的尺寸收缩、 芯层与包层的界面处的 Ce离子扩散以及后续机械加工余量等因素, 结合理论模 拟和实验结果而确定的。 此后, 将层叠的流延膜片置于 50~90°C的环境中, 施加 20-80
Powder. Then, a ceramic body is prepared by using a tape casting process. Among them, a surfactant such as EDS is used as a dispersing agent, and alcohol is used as a solvent, and a vinyl polymer (PVA, PVB or PVC) is used as a binder, and a phthalate plasticizer is used as a plasticizer. The specific steps are as follows: the raw material powder is mixed with a solvent and a dispersing agent into a ball mill for ball-milling mixing; after the mixing is uniform, a binder and a plasticizer are added for secondary ball milling to obtain a slurry; then, the mixture is uniformly mixed. The slurry is placed in a vacuum system to remove air bubbles from the slurry; thereafter, the slurry is formed on a tape casting machine to obtain a cast film , then dry at room temperature for 24 hours. After drying, a precursor cast film of Y 3 A1 5 0 12 and a precursor cast film of C^ -x Ce J 3A1 5 0 12 were obtained, respectively. Next, the precursor cast film is cut according to the design size of the light-emitting concentrator (length 1 and width w as shown in FIG. 2) to obtain a cast film of a corresponding size, in consideration of subsequent sintering of the cast film. The size shrinkage and subsequent machining allowance in the process, the size of the cast film is slightly larger than l*w. The specific value of the size can be determined by theoretical simulation combined with experimental analysis. Then, take! !! The precursor cast film of the sheet (Y, _ x Ce x ) 3 A1 5 0 12 was laminated, and n, and 11 2 pieces of the precursor cast film of ¥ 3 1 5 0 12 were laminated on both sides. Where η. η
Figure imgf000010_0001
The value of 2 is obtained by comprehensively considering the thickness of each layer (cU, dd 2 ) of the illuminating concentrator to be obtained, the dimensional shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the core layer and the cladding, and the subsequent machining. Factors such as balance are determined by combining theoretical simulations and experimental results. Thereafter, the laminated cast film is placed in an environment of 50 to 90 ° C, and 20-80 is applied.
MPa的压力, 使得层叠的各流延膜片能够较好地结合在一起。 此后, 在 500~900 °C的温度下进行 12h的排胶处理, 接着在 200~300Mpa的压力下冷等静压, 得到具 有多层结构的陶瓷素坯。 将陶瓷素坯在 1650~1850°C的温度下真空烧结 5~30h, 得到了具有多层层叠结构的多层陶瓷。 在烧结过程中, 原本位于 n。片 (Y xCe J 3 Al 50 12流延膜片 (烧结后成为芯层 20) 中的 Ce离子向两边的 Y 3A1 50 12流延膜片 (烧结后成为包层 21和 22) 中扩散。 在最终获得的多层陶瓷中, Ce离子惨杂浓 度由中心到表面递减。 图 4示出了多层结构的陶瓷中 Ce离子沿高度方向的浓度分 布示意图。 随后, 对烧结获得的多层陶瓷进行抛光处理, 获得了发光聚集器 2。 The pressure of MPa allows the laminated cast films to be better combined. Thereafter, the rubber discharge treatment was carried out at a temperature of 500 to 900 ° C for 12 hours, followed by cold isostatic pressing at a pressure of 200 to 300 MPa to obtain a ceramic green body having a multilayer structure. The ceramic green body was vacuum sintered at a temperature of 1650 to 1850 ° C for 5 to 30 hours to obtain a multilayer ceramic having a multilayer laminated structure. During the sintering process, it was originally located at n. The film (the Ce ion in the Y x Ce J 3 Al 5 0 12 cast film (the core layer 20 after sintering) is cast into the Y 3 A1 5 0 12 film on both sides (the cladding layers 21 and 22 after sintering) In the finally obtained multilayer ceramic, the Ce ion concentration decreases from the center to the surface. Figure 4 shows the concentration distribution of Ce ions in the height direction in the ceramic of the multilayer structure. The multilayer ceramic was subjected to a polishing treatment to obtain a light-emitting concentrator 2.
[0038] 第二实施例 Second Embodiment
[0039] 图 5是根据本发明第二实施例的的发光设备的发光聚集器的多层结构的侧示图 和俯视图。  5 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a second embodiment of the present invention.
[0040] 根据本发明第二实施例的发光设备与第一实施例的发光设备的区别之处在于: 多层结构中的芯层是由 n层 (n〉2, 且 n为奇数) 具有不同的稀土离子惨杂浓度 的发光陶瓷层构成的, 并且越靠近中心的发光陶瓷层的稀土离子惨杂浓度越高 。 与第一实施例的发光设备相比, 从发光聚集器 2的中心到两侧, 稀土离子的惨 杂浓度的过渡更加平缓, 使得发光聚集器 2中的热场分布更加均匀, 进一步减少 了热效应。 除此之外, 发光设备与第一实施例的发光设备的构造几乎相同, 因 此下面将省略重复的说明。 [0040] A light-emitting device according to a second embodiment of the present invention is different from the light-emitting device of the first embodiment in that: the core layer in the multilayer structure is composed of n layers (n>2, and n is an odd number). The rare earth ions are composed of a luminescent ceramic layer of a heterogeneous concentration, and the rarer ion concentration of the luminescent ceramic layer closer to the center is higher. Compared with the illuminating device of the first embodiment, the transition from the center to the both sides of the illuminating concentrator 2 is more gradual, so that the thermal field distribution in the illuminating concentrator 2 is more uniform, further reducing the thermal effect. . Except for this, the illuminating device is almost identical in construction to the illuminating device of the first embodiment, The repeated explanation will be omitted below.
[0041] 下面, 将参照图 5以芯层由具有不同的 Ce离子惨杂浓度的两种 YAG: Ce发光陶 瓷层烧结而成的情况为例, 简要说明本例中的发光聚集器 2的制备方法。 在图 5 所示的示例中, 设置有 3层芯层, 即, n=3。  [0041] Hereinafter, a case where the core layer is sintered by two kinds of YAG: Ce luminescent ceramic layers having different Ce ion concentrations will be exemplified with reference to FIG. 5, and the preparation of the luminescent concentrator 2 in this example will be briefly described. method. In the example shown in Fig. 5, three core layers are provided, that is, n=3.
[0042] 分别按照 Y 3A1 50 12、 (Y !_aCe a) 3A1 50 12fP(Y bCe b) 3A1 50 12 (其中 x=0.001~0.1 , 且 a>b, 具体的值根据光源的入射光的强度、 发光聚集器的尺寸、 对于产品的 色温及色坐标的要求, 通过理论计算和实验分析确定) 的化学计量配比称量高 纯度的商业 A1 20 3粉体、 ¥ 20 3粉体和^0 2粉体。 然后, 通过采用流延成型工艺 制备陶瓷坯体。 其中, 选用 EDS等表面活性剂作为分散剂, 选用酒精作为溶剂, 选用乙烯基聚合物 (PVA、 PVB或 PVC) 等作为粘结剂, 选用邻苯二甲酸酯类塑 化剂作为塑化剂。 制备具体步骤如下: 将原料粉体与溶剂、 分散剂装入球磨机 进行球磨混合; 混和均匀后, 再加入粘结剂和塑化剂进行二次球磨混料, 得到 浆料; 然后, 将混合均匀的浆料置于真空系统中, 排除浆料中的气泡; 此后, 使浆料在流延成型机上成型, 得到流延膜, 之后常温干燥 24h。 干燥后, 分别获 得了 Y 3A1 50 12的前驱体流延膜、 (Y !_aCe a) 3A1 50 12的前驱体流延膜和 (Y ^Ce b) 3 Al 50 12的前驱体流延膜。 接下来, 按照发光聚集器的设计尺寸 (如图 5中所示的 长度 1和宽度 w) 裁剪前驱体流延膜, 得到相应尺寸的流延膜片, 考虑到流延膜 片在后续的烧结过程中的尺寸收缩和后续机械加工余量, 流延膜片的尺寸要略 大于 l*w。 尺寸的具体值可以通过理论模拟结合实验分析而确定。 然后, 取 n Q 片 (Y ,aCe J 3A1 50 12的前驱体流延膜片进行层叠, 并且在两边如图所示地分别再 层叠 n 3和 n 4片 (Y !_bCe b) 3A1 50 12的前驱体流延膜片以及 n
Figure imgf000011_0001
2片 Υ 3Α1 50 12的前 驱体流延膜片。 其中, η。、 η ι、 η 2、 η
Figure imgf000011_0002
4的值是通过综合考虑想要获得的发 光聚集器的各层厚度 (d。、 、 d 2、 d 3、 d 4) 、 后续的烧结过程中的尺寸收缩 、 层叠各层的界面处的 Ce离子扩散以及后续机械加工余量等因素, 结合理论模 拟和实验结果而确定的。 此后, 将层叠的流延膜片置于 50~90°C的环境中, 施加 20-80
[0042] according to Y 3 A1 5 0 12 , (Y !_ a Ce a ) 3 A1 5 0 12 fP(Y b Ce b ) 3 A1 5 0 12 (where x=0.001~0.1, and a>b, The specific value is based on the intensity of the incident light of the light source, the size of the illuminating concentrator, the color temperature and color coordinates of the product, and the stoichiometric ratio determined by theoretical calculation and experimental analysis. The high purity commercial A1 2 0 3 is weighed. Powder, ¥ 2 0 3 powder and ^0 2 powder. Then, a ceramic body is prepared by using a tape casting process. Among them, a surfactant such as EDS is used as a dispersing agent, and alcohol is used as a solvent, and a vinyl polymer (PVA, PVB or PVC) is used as a binder, and a phthalate plasticizer is used as a plasticizer. The specific steps are as follows: the raw material powder is mixed with a solvent and a dispersing agent into a ball mill for ball-milling mixing; after the mixing is uniform, a binder and a plasticizer are added for secondary ball milling to obtain a slurry; then, the mixture is uniformly mixed. The slurry was placed in a vacuum system to remove air bubbles in the slurry; thereafter, the slurry was molded on a tape casting machine to obtain a cast film, which was then dried at room temperature for 24 hours. After drying, a precursor cast film of Y 3 A1 5 0 12 , a precursor cast film of (Y !_ a Ce a ) 3 A1 5 0 12 and (Y ^Ce b ) 3 Al 5 0 12 were obtained, respectively. The precursor cast film. Next, the precursor cast film is cut according to the design size of the light-emitting concentrator (length 1 and width w as shown in FIG. 5) to obtain a cast film of a corresponding size, in consideration of subsequent sintering of the cast film. The size shrinkage and subsequent machining allowance in the process, the size of the cast film is slightly larger than l*w. The specific value of the size can be determined by theoretical simulation combined with experimental analysis. Then, the sheet take n Q (Y, a Ce precursor casting membrane J 3 A1 5 0 12 are laminated, and are then laminated on both sides as shown in FIG n 3 and n 4 pieces (Y! _ B Ce b ) 3 A1 5 0 12 precursor cast film and n
Figure imgf000011_0001
2 sheets of Υ 3 Α 1 5 0 12 precursor cast film. Where η. , η ι , η 2 , η
Figure imgf000011_0002
The value of 4 is obtained by comprehensively considering the thickness (d, , d 2 , d 3 , d 4 ) of each layer of the light-emitting concentrator to be obtained, the dimensional shrinkage in the subsequent sintering process, and the Ce at the interface of each layer. Factors such as ion diffusion and subsequent machining allowances are determined in conjunction with theoretical simulations and experimental results. Thereafter, the laminated cast film is placed in an environment of 50 to 90 ° C, and 20-80 is applied.
MPa的压力, 使得层叠的各流延膜片能够较好地结合在一起。 此后, 在 500~900 °C的温度下进行 12h的排胶处理, 接着在 200~300Mpa的压力下冷等静压, 得到具 有多层结构的陶瓷素坯。 将陶瓷素坯在 1650~1850°C的温度下真空烧结 5~30h, 得到了具有多层层叠结构的多层陶瓷。 相比于实施例 1, 由于芯层是由位于中心 的 n。片 (Y !_aCe J 3A1 50 12流延膜片以及位于两侧的 n 3和 η (Υ i_bCe b) 3A1 50 12的 前驱体流延膜片形成的, 且 a>b, 烧结过程中 Ce离子的由芯层向包层的扩散将更 加缓和。 因而, 如图 6所示, 在该实施例中沿层叠方向的 Ce离子浓度的变化更加 平缓, 能够进一步减小热效应。 The pressure of MPa allows the laminated cast films to be better combined. Thereafter, the rubber is discharged at a temperature of 500 to 900 ° C for 12 hours, and then cold isostatic pressing at a pressure of 200 to 300 MPa is obtained. A ceramic green body having a multilayer structure. The ceramic green body was vacuum sintered at a temperature of 1650 to 1850 ° C for 5 to 30 hours to obtain a multilayer ceramic having a multilayer laminated structure. Compared to Example 1, since the core layer is n located at the center. a sheet (Y !_ a Ce J 3 A1 5 0 12 cast film and a precursor cast film on both sides of n 3 and η (Υ i_ b Ce b ) 3 A1 5 0 12 , and a >b, the diffusion of Ce ions from the core layer to the cladding during sintering is more moderate. Thus, as shown in Fig. 6, the variation of the Ce ion concentration in the stacking direction is more gentle in this embodiment, and can be further reduced. Thermal effect.
[0043] 第三实施例 Third Embodiment
[0044] 在第二实施例中, 多层结构中的芯层是由奇数层的具有不同的稀土离子惨杂浓 度的发光陶瓷层构成的。 在此情况下, 越靠近中心的发光陶瓷层的稀土离子惨 杂浓度越高, 位于中心的芯层具有最高的惨杂浓度。 而在第三实施例中, 多层 结构中的芯层是由 n层 (n≥2, 且 n为偶数) 具有不同的稀土离子惨杂浓度的发光 陶瓷层构成的, 并且越靠近中心的发光陶瓷层的稀土离子惨杂浓度越高。 除此 之外, 发光设备与第三实施例的发光设备的构造几乎相同, 因此下面将省略重 复的说明。  In the second embodiment, the core layer in the multilayer structure is composed of an odd-numbered luminescent ceramic layer having different rare earth ion concentrations. In this case, the higher the rare earth ion concentration of the luminescent ceramic layer closer to the center, the higher the core layer at the center has the highest impurity concentration. In the third embodiment, the core layer in the multilayer structure is composed of an n-layer (n≥2, and n is an even number) luminescent ceramic layer having different rare earth ion impurity concentrations, and the closer to the center of the luminescence The higher the rare earth ion concentration of the ceramic layer. Except for this, the configuration of the light-emitting device is almost the same as that of the light-emitting device of the third embodiment, and therefore repeated explanation will be omitted below.
[0045] 应当理解的是, 在本实施例中, 如图 7所示, 多层结构中的芯层是由偶数层 ( 图中为 2层) 具有不同的稀土离子惨杂浓度的发光陶瓷层构成的, 因此不存在如 图 5所示的处于发光聚集器的中心的芯层 20, 而是芯层 20和 23共同位于最靠近发 光陶瓷层的中心的位置处。 在此情况下, 如果距发光聚集器 2的中心相同距离的 两层芯层 (例如, 图中的芯层 20和芯层 23) 是由含有相同的稀土离子惨杂浓度 的发光陶瓷材料烧结而成的, 那么如图 8所示, 在烧结后的多层结构中, 发光陶 瓷层内的稀土元素离子的惨杂浓度在所述多层结构的层叠方向上依然是从中心 到两侧逐渐降低的。 如果距发光聚集器 2的中心相同距离的两层芯层是由含有不 同的稀土离子惨杂浓度的发光陶瓷材料烧结而成的, 那么稀土离子惨杂浓度的 峰值不再位于发光聚集器 2的中心, 而是出现在最靠近发光聚集器 2的中心的两 层芯层中稀土离子惨杂浓度更高的那个芯层的中心处。 图 9示出了在发光聚集器 2设置有两层芯层 20和 23并且芯层 20内的稀土离子惨杂浓度大于芯层 23内的稀土 离子惨杂浓度的情况。 应当理解, 在这种情况下, 虽然发光聚集器 2内的稀土离 子惨杂浓度的峰值位置从发光聚集器 2的中心发生了偏移, 但在整体上而言, 发 光聚集器 2内的稀土离子惨杂浓度依然是在厚度方向上从内部向外侧逐渐降低的 。 因此, 与第一实施例的发光设备相比, 本实施例的发光聚集器 2内的稀土离子 的惨杂浓度的过渡更加平缓, 使得发光聚集器 2中的热场分布更加均匀, 进一步 减少了热效应。 [0045] It should be understood that, in the present embodiment, as shown in FIG. 7, the core layer in the multilayer structure is an illuminating ceramic layer having a different rare earth ion impurity concentration in an even layer (two layers in the figure). Thus, there is no core layer 20 at the center of the light-emitting concentrator as shown in Fig. 5, but the core layers 20 and 23 are collectively located at the position closest to the center of the luminescent ceramic layer. In this case, if the two core layers (e.g., the core layer 20 and the core layer 23 in the drawing) are the same distance from the center of the light-emitting concentrator 2, they are sintered by the luminescent ceramic material containing the same rare earth ion concentration. Then, as shown in FIG. 8, in the multi-layered structure after sintering, the impurity concentration of the rare earth element ions in the luminescent ceramic layer is gradually decreased from the center to the both sides in the lamination direction of the multilayer structure. of. If the two core layers at the same distance from the center of the illuminating concentrator 2 are sintered by a luminescent ceramic material containing different concentrations of rare earth ions, the peak of the rare earth ion concentration is no longer located in the luminescent concentrator 2 The center, but appears in the center of the core layer having a higher rare earth ion concentration in the two core layers closest to the center of the light-emitting concentrator 2. FIG. 9 shows a case where the light-emitting concentrator 2 is provided with two core layers 20 and 23 and the rare earth ions in the core layer 20 have a dense concentration greater than that of the rare earth ions in the core layer 23. It should be understood that, in this case, although the peak position of the rare earth ion impurity concentration in the light-emitting concentrator 2 is shifted from the center of the light-emitting concentrator 2, as a whole, The rare earth ion concentration in the light concentrator 2 is still gradually decreased from the inside to the outside in the thickness direction. Therefore, compared with the illuminating device of the first embodiment, the transition of the impurity concentration of the rare earth ions in the illuminating concentrator 2 of the present embodiment is more gradual, so that the thermal field distribution in the illuminating concentrator 2 is more uniform, further reducing Thermal effect.
[0046] 第四实施例 Fourth Embodiment
[0047] 图 10是根据本发明第四实施例的的发光设备的发光聚集器的多层结构的侧示图 和俯视图。 根据本发明第四实施例的发光设备与第一实施例的发光设备的区别 之处在于: 多层结构中的芯层包括两层或两层以上的不同的发光陶瓷层。 除此 之外, 发光设备与第一实施例的发光设备的构造几乎相同, 因此下面将省略重 复的说明。  10 is a side view and a plan view showing a multilayer structure of a light-emitting concentrator of a light-emitting device according to a fourth embodiment of the present invention. The illuminating device according to the fourth embodiment of the present invention is different from the illuminating device of the first embodiment in that the core layer in the multilayer structure includes two or more layers of different luminescent ceramic layers. Except for this, the configuration of the light-emitting device is almost the same as that of the light-emitting device of the first embodiment, and thus the repeated description will be omitted below.
[0048] 芯层中的不同的发光陶瓷层是由惨杂有不同的稀土元素离子的发光陶瓷材料形 成的。 在图 10的示例中, 为了获得显色指数较高的白光输出, 使用 (Y 。Ce ε) 3A1 50 12陶瓷 (其中 c=0.001~0.1, 具体的值根据光源入射光的强度、 发光聚集器的尺 寸、 对产品色温及色坐标的要求, 通过理论计算和实验分析确定) 形成芯层 20 , 使用 (Υ ,— dEu d) 3Al 50 12 (其中 d=0.001~0.1, 具体的值根据光源入射光的强度、 发光聚集器的尺寸、 对产品色温及色坐标的要求, 通过理论计算和实验分析确 定) 陶瓷形成芯层 25。 图中的 d2、 d5、 d0和 dl表示各层的厚度。 在烧结过程中 , 构成芯层 20的流延膜片中的 Ce离子和构成芯层 25的流延膜片中的 Eu离子也从 原本所在的层向外侧的包层扩散, 使得在根据本实施例的发光聚集器 2中, 稀土 离子的惨杂浓度在整体上依然是从中心向两侧递减的。 [0048] The different luminescent ceramic layers in the core layer are formed from luminescent ceramic materials that are miscellaneous with different rare earth ions. In the example of Fig. 10, in order to obtain a white light output with a high color rendering index, (Y.Ce ε ) 3 A1 50 12 ceramics (where c = 0.001 to 0.1), the specific value is based on the intensity of the incident light of the light source, and the luminescence is concentrated. The size of the device, the color temperature and color coordinates of the product, determined by theoretical calculations and experimental analysis) to form the core layer 20, using (Υ, - d Eu d ) 3 Al 5 0 12 (where d = 0.001 ~ 0.1, specific The value is determined by the theoretical calculation and experimental analysis according to the intensity of the incident light of the light source, the size of the illuminating concentrator, the color temperature and color coordinates of the product, and the ceramic layer 25 is formed. D2, d5, d0 and dl in the figure indicate the thickness of each layer. During the sintering process, the Ce ions in the cast film constituting the core layer 20 and the Eu ions in the cast film constituting the core layer 25 are also diffused from the layer to the outer side of the layer, so that according to the present embodiment, In the luminescent concentrator 2 of the example, the impurity concentration of the rare earth ions is still decreasing from the center to both sides as a whole.
[0049] 此外, 在本例中, 由于设置有两种含不同惨杂离子的 YAG发光陶瓷芯层, 从光 源 1发出的具有第一波长分布的光经过发光聚集器 2的光入射面 211和 /或 213进入 发光聚集器, 至少一部分的具有第一波长分布的入射光被 Ce离子参杂的芯层 20 转换为具有第二波长分布的受激光, 并在全反射作用下被导光至光出射表面 212 出射; 至少一部分的具有第一波长分布的入射光被 Eu离子参杂的芯层 25转换为 具有第三波长分布的受激光, 并在全反射作用下被导光至光出射表面 212出射。 需要注意的是, 部分在芯层 20中产生的具有第二波长分布的受激光可能会进入 芯层 25并被二次转换成具有第三波长分布的受激光, 反之亦然。 通过调控各个 层的厚度、 各种稀土离子参杂量等参数, 能够调控从光出射表面 212出射的光中 具有第一波长分布、 第二波长分布和第三波长分布的光的比例, 从而得到期望 颜色的光输出。 因此, 根据本实施例的发光设备除了具有前述实施例的优点之 外, 还能够实现对输出光的色温及色坐标的更理想的控制。 Further, in this example, since two YAG luminescent ceramic core layers containing different dent ions are provided, light having a first wavelength distribution emitted from the light source 1 passes through the light incident surface 211 of the luminescent concentrator 2 and And/or 213 enters the illuminating concentrator, at least a portion of the incident light having the first wavelength distribution is converted into a laser light having a second wavelength distribution by the Ce-doped core layer 20, and is guided to the light by total reflection. The exit surface 212 exits; at least a portion of the incident light having the first wavelength distribution is converted into a laser having a third wavelength distribution by the Eu-doped core layer 25, and is guided to the light exit surface 212 by total reflection. Exit. It is to be noted that a portion of the received laser light having a second wavelength distribution generated in the core layer 20 may enter the core layer 25 and be secondarily converted into a laser light having a third wavelength distribution, and vice versa. By regulating each The thickness of the layer, the parameters of various rare earth ions, and the like can adjust the ratio of the light having the first wavelength distribution, the second wavelength distribution, and the third wavelength distribution among the light emitted from the light exit surface 212, thereby obtaining a desired color. Light output. Therefore, the light-emitting device according to the present embodiment can achieve more desirable control of the color temperature and color coordinates of the output light in addition to the advantages of the foregoing embodiments.
[0050] 除了制备材料、 叠层的顺序和数量等略有不同之外, 根据本实施例的发光聚集 器 2的制备方法与在第一实施例和第二实施例中的制备方法类似, 这里就不再赘 述。 [0050] The manufacturing method of the light-emitting concentrator 2 according to the present embodiment is similar to the preparation methods in the first embodiment and the second embodiment except that the materials, the order and the number of the layers are slightly different, and the like. I won't go into details.
[0051] 第五实施例  Fifth Embodiment
[0052] 根据本发明的第五实施例的发光设备是第一实施例的发光设备的变型例。 本实 施例的发光设备与第一实施例的发光设备的不同之处: 包层 21和 22是由 A1 20 3陶 瓷构成的。 与实施例 1中的由 YAG陶瓷构成的包层相比, 由 A1 20 3陶瓷构成的包 层具有更高的热导率, 因此能够更加有效地减小发光设备中的发光聚集器的热 效应。 A light-emitting device according to a fifth embodiment of the present invention is a modification of the light-emitting device of the first embodiment. The illuminating device of the present embodiment is different from the illuminating device of the first embodiment in that the cladding layers 21 and 22 are composed of A1 2 0 3 ceramics. Compared with the cladding composed of YAG ceramic in Embodiment 1, the cladding composed of A1 2 0 3 ceramic has higher thermal conductivity, so that the thermal effect of the luminescent concentrator in the illuminating device can be more effectively reduced. .
[0053] 下面将简要说明根据本实施例的发光设备中的发光聚集器的制备方法。  [0053] A method of preparing a light-emitting concentrator in the light-emitting device according to the present embodiment will be briefly explained below.
[0054] 分别按照 A1 20 3和 (Y !_xCe J 3A1 50 12 (其中 x=0.001~0.1, 具体的值根据光源入 射光的强度、 发光聚集器的尺寸、 对产品色温及色坐标的要求, 通过理论计算 和实验分析确定。 ) 的化学计量配比称量高纯度的商业 A1 20 3粉体 ,Y 20 3 粉体和 Ce0 2粉体。 然后, 采用流延成型工艺制备陶瓷坯体。 其中, 选用 EDS等 表面活性剂作为分散剂, 选用酒精作为溶剂, 选用乙烯基聚合物 (PVA、 PVB 或 PVC) 等作为粘结剂, 选用邻苯二甲酸酯类塑化剂作为塑化剂。 由于致密的 A1 20 3陶瓷的烧结温度高于致密的 (Y ^Ce J 3A1 50 12陶瓷的烧结温度, 为了在相同 温度下烧结得到致密的 A1 20 3 & (Y ,_xCe J 3A1 50 12&A1 20 3多层结构的陶瓷, 需要 在 A1 20 3陶瓷的原始浆料中加入 MgO和 /或 TEOS等烧结助剂。 将两种陶瓷的原料 粉体分别与溶剂、 分散剂球磨混和均匀后, 再加入粘结剂和塑化剂进行二次球 磨混料, 得到浆料; 将混合均匀的浆料放入真空系统中, 排除浆料中的气泡; 此后, 使浆料在流延成型机上成型, 得到流延膜, 之后常温干燥 24h。 干燥后, 分别获得了 Al 20 3的前驱体流延膜和 (Y ,xCe x) 3A1 50 12的前驱体流延膜。 接下来 , 按照发光聚集器的设计尺寸 (如图 2中所示的长度 1和宽度 w) 裁剪前驱体流延 膜, 得到相应尺寸的流延膜片, 考虑到流延膜片在后续的烧结过程中的尺寸收 缩和后续机械加工余量, 流延膜片的尺寸要略大于 l*w。 尺寸的具体值可以通过 理论模拟结合实验分析而确定。 然后, 取 n。片 (Y ,xCe J 3A1 50 12的前驱体流延膜 片进行层叠, 并且在两边分别再层叠 n ,和!1 2片 A1 20 3 [0054] according to A1 2 0 3 and (Y !_ x Ce J 3 A1 5 0 12 (where x = 0.001 ~ 0.1, the specific value depends on the intensity of the incident light of the light source, the size of the light-emitting concentrator, and the color temperature of the product The requirements of the color coordinates are determined by theoretical calculations and experimental analysis. The stoichiometric ratio is used to weigh high-purity commercial A1 2 0 3 powder, Y 2 0 3 powder and Ce0 2 powder. Then, cast molding The ceramic body is prepared by a process. Among them, a surfactant such as EDS is used as a dispersing agent, and alcohol is used as a solvent, and a vinyl polymer (PVA, PVB or PVC) is used as a binder, and a phthalate plasticizer is selected. As a plasticizer. Since the sintering temperature of dense A1 20 3 ceramics is higher than that of dense (Y ^Ce J 3 A1 5 0 12 ceramics sintering temperature, in order to sinter at the same temperature to obtain dense A1 2 0 3 & ( Y , _ x Ce J 3 A1 5 0 12 & A1 2 0 3 Ceramics with a multilayer structure, it is necessary to add a sintering aid such as MgO and/or TEOS to the original slurry of A1 2 0 3 ceramics. After the powder is uniformly mixed with the solvent and the dispersant, the binder and plasticization are added. The agent is subjected to secondary ball milling to obtain a slurry; the uniformly mixed slurry is placed in a vacuum system to remove bubbles in the slurry; thereafter, the slurry is formed on a tape casting machine to obtain a cast film, and then at room temperature After drying for 24 h, after drying, a precursor cast film of Al 2 0 3 and a precursor cast film of (Y , x Ce x ) 3 A1 5 0 12 were respectively obtained. Next, according to the design size of the light-emitting collector ( Length 1 and width w) as shown in Figure 2, cutting precursor casting Membrane, a cast film of corresponding size is obtained. Considering the dimensional shrinkage and subsequent machining allowance of the cast film in the subsequent sintering process, the size of the cast film is slightly larger than l*w. The specific value of the size can be determined by theoretical simulation combined with experimental analysis. Then, take n. The precursor casting film of the sheet (Y, x Ce J 3 A1 5 0 12 is laminated, and n is further laminated on both sides, and !1 2 pieces of A1 2 0 3
的前驱体流延膜片。 其中, η。、 η
Figure imgf000015_0001
2的值是通过综合考虑想要获得的发光聚 集器的各层厚度 (cU、 d d 2) 、 后续的烧结过程中的尺寸收缩、 芯层与包层 的界面处的 Ce离子扩散以及后续机械加工余量等因素, 结合理论模拟和实验结 果而确定的。 此后, 将层叠的流延膜片置于 50~90°C的环境中, 施加 20~80MPa的 压力, 使得层叠的各流延膜片能够较好地结合在一起。 此后, 在 500~900°C的温 度下进行 12h的排胶处理, 接着在 200~300Mpa的压力下冷等静压, 得到具有多层 结构的陶瓷素坯。 将陶瓷素坯在 1650~1850°C的温度下真空烧结 5~30h, 得到了 具有多层层叠结构的多层陶瓷。 在烧结过程中, 原本位于 η Λ(Υ xCe J 3A1 50 12 流延膜片 (烧结后成为芯层 20) 中的 Ce离子向两边的 A1 20 3流延膜片 (烧结后成 为包层 21和 22) 中扩散。 在最终获得的多层陶瓷中, Ce离子惨杂浓度由中心到 表面递减。 最后, 对烧结获得的多层陶瓷进行抛光处理, 并在多层陶瓷的一端 覆盖高度反射膜或全反射膜, 获得了用于根据本发明第五实施例的发光设备的 发光聚集器 2。
The precursor casts the diaphragm. Where η. η
Figure imgf000015_0001
The value of 2 is obtained by comprehensively considering the thickness of each layer (cU, dd 2 ) of the illuminating concentrator to be obtained, the dimensional shrinkage in the subsequent sintering process, the Ce ion diffusion at the interface of the core layer and the cladding, and the subsequent machining. Factors such as balance are determined by combining theoretical simulations and experimental results. Thereafter, the laminated cast film is placed in an environment of 50 to 90 ° C, and a pressure of 20 to 80 MPa is applied, so that the stacked cast films can be well bonded. Thereafter, the rubber discharge treatment was carried out at a temperature of 500 to 900 ° C for 12 hours, followed by cold isostatic pressing at a pressure of 200 to 300 MPa to obtain a ceramic green body having a multilayer structure. The ceramic green body was vacuum sintered at a temperature of 1650 to 1850 ° C for 5 to 30 hours to obtain a multilayer ceramic having a multilayer laminated structure. During the sintering process, the Ce ions originally located in the η Λ (Υ x Ce J 3 A1 5 0 12 cast film (the core layer 20 after sintering) are cast into the A1 2 0 3 film on both sides (sintered after sintering) Diffusion in the cladding layers 21 and 22). In the finally obtained multilayer ceramic, the Ce ion concentration decreases from the center to the surface. Finally, the multilayer ceramic obtained by sintering is polished and covered at one end of the multilayer ceramic. A highly reflective film or a total reflection film, a light-emitting concentrator 2 for a light-emitting device according to a fifth embodiment of the present invention is obtained.
[0055] 应当理解, 在第二实施例至第四实施例的发光设备中, 发光聚集器 2的包层也 可以如上所述地由 Al 20 3陶瓷构成。 [0055] It should be understood that in the light-emitting devices of the second to fourth embodiments, the cladding of the light-emitting concentrator 2 may also be composed of Al 2 0 3 ceramic as described above.
[0056] 尽管在上面已经参照附图说明了根据本发明的发光设备, 但是本发明不限于此 , 且本领域技术人员应理解, 在不偏离本发明随附权利要求书限定的实质或范 围的情况下, 可以做出各种改变、 组合、 次组合以及变型。  [0056] Although the illuminating device according to the present invention has been described above with reference to the accompanying drawings, the invention is not limited thereto, and those skilled in the art should understand that the substance or scope defined by the appended claims In this case, various changes, combinations, sub-combinations, and variations can be made.

Claims

权利要求书 Claim
[权利要求 1] 1 . 一种发光聚集器, 所述发光聚集器具有光出射表面、 光入射表面 以及与所述光出射表面相对的对侧表面, 其特征在于, [Claim 1] 1. A light-emitting concentrator having a light exit surface, a light incident surface, and a contralateral surface opposite to the light exit surface, wherein
所述发光聚集器具有层叠的多层结构, 所述多层结构包括位于中心的 至少一层芯层和层叠在所述至少一层芯层两侧的包层, 所述包层能够 透过具有第一波长分布的光, 所述至少一层芯层能够将具有所述第一 波长分布的光转换为具有第二波长分布的光, 并且 所述对侧表面设置有防止光线漏出的遮光元件, 并且所述光入射表面 的面积大于所述光出射表面的面积。  The illuminating concentrator has a laminated multi-layer structure including at least one core layer located at a center and a cladding layer laminated on both sides of the at least one core layer, the cladding layer being permeable to having Light of a first wavelength distribution, the at least one core layer capable of converting light having the first wavelength distribution into light having a second wavelength distribution, and the opposite side surface is provided with a light blocking member that prevents light from leaking, And the area of the light incident surface is larger than the area of the light exit surface.
[权利要求 2] 2. 根据权利要求 1所述的发光聚集器, 其特征在于, 在所述发光聚集 器中, [Claim 2] 2. The illuminating concentrator according to claim 1, wherein in the illuminating aggregator,
稀土元素离子的惨杂浓度在所述多层结构的层叠方向上从所述发光聚 集器的中心向两侧逐渐降低; 或者  The viscous concentration of the rare earth element ions gradually decreases from the center to the both sides of the light-emitting collector in the stacking direction of the multilayer structure; or
稀土元素离子的惨杂浓度从最靠近所述发光聚集器的所述中心的一个 芯层的中心向两侧逐渐降低。  The impurity concentration of the rare earth element ions gradually decreases from the center of one core layer closest to the center of the light-emitting concentrator to both sides.
[权利要求 3] 3. 根据权利要求 2所述的发光聚集器, 其特征在于, 所述至少一层芯 层包含两层或两层以上的具有不同的稀土元素离子惨杂浓度的发光陶 瓷层。 [Claim 3] The light-emitting concentrator according to claim 2, wherein the at least one core layer comprises two or more layers of luminescent ceramic layers having different concentrations of rare earth ions .
[权利要求 4] 根据权利要求 2所述的发光聚集器, 其特征在于, 所述至少一层芯层 包括两层或两层以上的不同的发光陶瓷层。 [Aspect 4] The illuminating concentrator according to claim 2, wherein the at least one core layer comprises two or more layers of different luminescent ceramic layers.
[权利要求 5] 根据权利要求 4所述的发光聚集器, 其特征在于, 各发光陶瓷层是由 惨杂有不同的稀土元素离子的发光陶瓷材料形成的。 [Attachment 5] The luminescent concentrator according to claim 4, wherein each of the luminescent ceramic layers is formed of a luminescent ceramic material having a different rare earth element ion.
[权利要求 6] 根据权利要求 1所述的发光聚集器, 其特征在于, 所述发光聚集器的 除了所述光入射表面、 所述光出射表面和所述对侧表面之外的至少一 个表面也设置有所述遮光元件。 [Attachment 6] The illuminating concentrator according to claim 1, wherein: the illuminating concentrator The light shielding member is also provided at least one surface other than the light incident surface, the light exit surface, and the opposite side surface.
[权利要求 7] 根据权利要求 1至 6中任一项所述的发光聚集器, 其特征在于, 所述遮 光元件是镜面反射膜。 The illuminating concentrator according to any one of claims 1 to 6, wherein the light shielding element is a specular reflection film.
[权利要求 8] 根据权利要求 1至 6中任一项所述的发光聚集器, 其特征在于, 所述发 光聚集器还设置有反射元件, 所述反射元件被布置在除了所述光入射 表面和所述光出射表面之外的至少一个表面上。 [Aspect 8] The illuminating concentrator according to any one of claims 1 to 6, wherein the illuminating concentrator is further provided with a reflecting element, the reflecting element being disposed except for the light incident surface And at least one surface other than the light exiting surface.
[权利要求 9] 根据权利要求 8所述的发光聚集器, 其特征在于, 所述反射元件是反 射率大于 95<¾的镜面反射层; 或者, 所述反射元件是反射率大于 90% 的漫反射材料层。 [Aspect 9] The illuminating concentrator according to claim 8, wherein the reflective element is a specular reflection layer having a reflectance greater than 95 <3⁄4; or the reflective element is a diffuse having a reflectance greater than 90% A layer of reflective material.
[权利要求 10] 根据权利要求 1至 6中任一项所述的发光聚集器, 其特征在于, 在所述 发光聚集器的所述光入射表面还设置有仅能透过具有所述第一光学分 布的光的光学膜。 The illuminating concentrator according to any one of claims 1 to 6, wherein the light incident surface of the illuminating concentrator is further provided with only the first An optical film of optically distributed light.
[权利要求 11] 根据权利要求 10所述的发光聚集器, 其特征在于, 所述光学膜是能够 透过具有所述第一波长分布的光的二向色膜, 或者是只能够透过以预 定范围的入射角入射的具有所述第一波长分布的光的角度选择滤光膜 [Aspect 11] The illuminating concentrator according to claim 10, wherein the optical film is a dichroic film capable of transmitting light having the first wavelength distribution, or is permeable only An angle selective filter film of light having the first wavelength distribution incident at a predetermined range of incident angles
[权利要求 12] 根据权利要求 1至 6中任一项所述的发光聚集器, 其特征在于, 所述发 光聚集器具有楔形形状, 使得所述光出射表面的面积小于与其相对的 表面的面积。 The illuminating concentrator according to any one of claims 1 to 6, wherein the illuminating concentrator has a wedge shape such that an area of the light exiting surface is smaller than an area of a surface opposite thereto .
[权利要求 13] 根据权利要求 1至 6中任一项所述的发光聚集器, 其特征在于, 所述包 层是 A1 20 3陶瓷层。 [Aspect 13] The illuminating concentrator according to any one of claims 1 to 6, wherein the package The layer is an A1 2 0 3 ceramic layer.
[权利要求 14] 根据权利要求 1至 6中任一项所述的发光聚集器, 其特征在于, 在所述 光出射表面设置有与所述光学聚集器光学连接的光耦合元件, 所述光 耦合元件的折射率等于或低于所述发光聚集器的所述芯层和所述包层 中的最低折射率。 [Aspect 14] The illuminating concentrator according to any one of claims 1 to 6, wherein an optical coupling element optically coupled to the optical concentrator is disposed on the light exiting surface, the light The refractive index of the coupling element is equal to or lower than the lowest refractive index in the core layer and the cladding of the light-emitting concentrator.
[权利要求 15] 15. 一种发光设备, 其特征在于, 所述发光设备包括: [Claim 15] 15. A light-emitting device, wherein the light-emitting device comprises:
如权利要求 1至 14中任一项所述的发光聚集器;  A luminescent concentrator according to any one of claims 1 to 14;
光源, 所述光源朝着所述发光聚集器的所述光入射表面布置, 所述光 源能够发出具有所述第一波长分布的光。  a light source, the light source being disposed toward the light incident surface of the light concentrator, the light source being capable of emitting light having the first wavelength distribution.
[权利要求 16] —种投影光源, 其特征在于, 所述投影光源包括如权利要求 1至 14中 任一项所述的发光聚集器。 [Claim 16] A projection light source, characterized in that the projection light source comprises the light-emitting concentrator according to any one of claims 1 to 14.
PCT/CN2017/114706 2017-06-27 2017-12-06 Light collector, light emitting device, and projection light source WO2019000845A1 (en)

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