Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/70—Surface textures, e.g. pyramid structures
  • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
  • B05B14/10—Arrangements for collecting, re-using or eliminating excess spraying material the excess material being particulate
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
  • B05B7/14—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas designed for spraying particulate materials
  • B05B7/1481—Spray pistols or apparatus for discharging particulate material
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
  • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
  • B24C1/06—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for producing matt surfaces, e.g. on plastic materials, on glass
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
  • B24C3/00—Abrasive blasting machines or devices; Plants
  • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
  • B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
  • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
  • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67063—Apparatus for fluid treatment for etching
  • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
  • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
  • H01L21/67706—Mechanical details, e.g. roller, belt
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
  • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/137—Batch treatment of the devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
  • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
  • B05B1/20—Arrangements of several outlets along elongated bodies, e.g. perforated pipes or troughs, e.g. spray booms; Outlet elements therefor
  • B05B1/202—Arrangements of several outlets along elongated bodies, e.g. perforated pipes or troughs, e.g. spray booms; Outlet elements therefor comprising inserted outlet elements
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
  • B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
  • B05B13/0207—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the work being an elongated body, e.g. wire or pipe
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to a method for producing textured silicon wafers and to a device which can be used for such a method for the spray-blasting of silicon wafers.
• Multicrystalline silicon wafers are typically subjected to texturing anisotropic acid texture wet etch. So far, multicrystalline wafers are often made with so-called slurry saws from the ingot, i. the wafer block, separated. Alternatively, they can be separated by means of diamond wire saws. These are much cheaper because they are faster and waste less silicon. The diamond wire, however, leaves a relatively smooth surface that can not be textured directly. Previously known methods are either very expensive and / or environmentally harmful or failed due to required quality requirements.
• US 2007/0221329 A1 discloses a method and a device for the spray jet treatment of flat substrates, such as flexible printed circuit boards and the like, in a continuous process with a substantially horizontal roller transport system with transport rollers in the form of underside carrying rollers on which the substrates can be placed with their underside , and top hold down rollers that bear against the top of the substrates.
• a treatment fluid e.g. an etching fluid is sprayed by means of spray nozzles on the top and / or bottom of the substrates.
• the roller transport system has a gap at the respective spray jet impact position, i. There is no transport roller, so that the coming of the spray nozzle jet directly hits the substrate located there.
• the publication US 2014/004369 A2 discloses a method for producing textured silicon wafers in which polycrystalline silicon wafers are cast directly with a thickness of less than .mu.m to provide corresponding wafer blanks become.
• the wafer blanks Prior to a chemical etching process, the wafer blanks are subjected to an abrasive sandblasting process in a stand-alone sand blast treatment apparatus where they are exposed to a dry or wet sand blast.
• a water based abrasive particle suspension can be used, wherein the abrasive particles typically include glassy silica, silicon, silicon carbide, alumina, quartz, or combinations thereof.
• Additives may be added to the suspension to improve fluidity, prevent caking, or facilitate reuse, such as coolants, surfactants, pH buffers, acids, bases, and chelating agents.
• the abrasive particles have mean particle sizes, ie average particle diameter, between 1 ⁇ and 20 ⁇ .
• the published patent application DE 10 2014 013 591 A1 discloses a method for texturing multicrystalline silicon wafers, which are sawn from a block using a diamond saw or a steel wire saw in combination with a glycol-silicon carbide suspension, in acidic, hydrofluoric acid-containing etching media.
• the published patent application WO 2009/026648 A1 discloses a method for texturing a substrate surface in a continuous process using a horizontal roller transport system, wherein before an actual etching step, an abrasive treatment is carried out to produce microfractures in the substrate surface.
• the substrate may in particular be a borosilicate glass substrate for thin-film photovoltaic modules.
• the abrasive treatment may include dry blasting, sanding with a slurry, sanding or wet blasting.
• abrasive particles e.g. such as silicon carbide, alumina, corundum, boron nitride, boron carbide or glass.
• US 2013/0306148 A1 discloses a method for producing textured silicon wafers, in which a wafer block is cut into individual wafer blanks by means of wire saws and the wafer blanks are subjected to a unilateral sandblasting process in which they are subjected to an abrasive sandblasting process on one side, before the abrasive blast process Wafer blank is subjected on both sides of a wet-chemical etching using hydrofluoric acid and / or nitric acid.
• the publication WO 2012/1 18960 A2 discloses a method and a device for the roughening treatment of directly cast silicon wafers in a continuous process using a horizontal conveyor belt, wherein the silicon wafers placed on the conveyor belt are exposed to a dry or moist sandblast on the top side.
• silicon wafers which have a relatively smooth surface compared to sawn wafers, should be roughened or textured.
• the wafer thickness, the wafer material, the type of sand particle, the desired surface roughness, the wafer temperature and the wafer size are suitably matched to prevent breakage of the silicon wafers. If necessary, a wet-chemical, acidic texturing etching can follow this roughening treatment.
• the published patent application EP 0 107 357 A2 discloses a method and a device for producing photovoltaic devices of a type with amorphous semiconductor materials on a continuous, electrically conductive substrate in a continuous process using a horizontal transport system, wherein u.a. a sand blasting process is provided to provide a diffusely reflecting surface.
• the invention is based on the technical problem of providing a method for producing textured silicon wafers with relatively little effort and an apparatus for the spray-blast-off treatment of silicon wafers which can be used in the context of such a method.
• the invention solves this problem by providing a manufacturing method having the features of claim 1 and a device having the features of claim 5.
• individual wafer blanks are provided, eg, as conventionally drawn or directly melt deposited wafer blanks, or by dividing a wafer block into individual wafer blanks in a per se conventional manner by a wire sawing operation, such as a diamond wire sawing operation.
• the wafer blanks are then processed in a continuous process using a horizontal transport system, such as a roller transport system or a belt transport system, subjected to several consecutive treatment processes.
• the wafer blanks are subjected to an outpouring jet process in which they are exposed to a spray jet with a water-based abrasion particle suspension on their top side and / or bottom side.
• This roughening treatment process can be easily integrated into conventional, modular wet processing equipment without additional expense in the existing production.
• this treatment process achieves uniform surfaces. With a subsequent HF / HNO3 standard texture, reflectance values of less than 23% are achieved. It provides a low cost method of texture e.g.
• diamond wire-sawn multicrystalline silicon wafers which may be based on an in-line wet process, and roughen the relatively smooth surface of the wafers without significant material removal, so that they subsequently become e.g. can be edited with the standard texture HF / HNO3.
• HF / HNO3 standard texture HF / HNO3.
• corundum, diamond and / or silicon carbide particles are used as abrasive particles in the abrasive particle suspension.
• abrasive particles in the abrasive particle suspension are those having an average particle size between 5 ⁇ and 150 ⁇ , in particular those having an average particle size between 40 ⁇ and 80 ⁇ .
• a viscosity-increasing additive is used in the Abrasionspumblesuspension containing one or more of the substances from a group consisting of polyethylene glycol, hydroxyethyl cellulose, hydroxymethyl cellulose and xanthan consists. This represents an advantageous measure for setting a respectively suitable viscosity for the Abrasionspappelsuspension.
• a spray pressure of between 0.5 bar and 3 bar, in particular between 0.8 bar and 1, 2 bar, is set for the spray jet. It is conducive to the spray-out process in corresponding applications if the spraying pressure for the spray jet is kept within this range.
• the spray-on jet treatment device comprises a horizontal transport system on which wire-sawn silicon wafers can be placed with their underside, a spray fluid tank for storing a water-based abrasive particle suspension as spray-on fluid and a spray nozzle unit with one or more spray nozzles or spray tubes for respectively producing one on the top and / or the Underside of the silicon wafer directed Aufrausprühstrahls stored in the spray fluid tank Abrasionsp
• This device allows with relatively little effort an advantageous roughening spray jet treatment of the silicon wafer in a continuous process.
• the transport system may in particular be a roller transport system with at least underside support rollers on which the silicon wafers can be placed. Alternatively, e.g. a tape transport system usable.
• the roller transport system includes a support reinforcement for the continuously transported silicon wafers at a location which is opposite to a spray jet impact position. This counteracts excessive loading of the silicon wafers by the impinging spray, which prevents unwanted deformations or warping of the wafers.
• opposing spray nozzles or spray tubes can be arranged, whose pressure loads on the wafers then compensate each other.
• At least one spray nozzle of the spray nozzle unit is a flat jet nozzle with a spray angle between 40 ° and 60 °, in particular between 55 ° and 65 °.
• This type of spray nozzle is very advantageous for the spray-blast treatment of the silicon wafers in corresponding applications.
• a plurality of such flat jet nozzles can be arranged transversely to the transport direction of the silicon wafers in succession and / or in the transport direction of the silicon wafers. be arranged successively.
• both transverse to Wafertransportnchtung as well as in Wafertransportnchtung several flat jet nozzles can be successively arranged such that in Wafertransportnchtung adjacent flat jet nozzles are arranged offset relative to each other transversely to Wafertransportnchtung. This promotes uniform spray jet treatment of the silicon wafers over their entire treated surface.
• the flat jet nozzles can be made, for example, from a ceramic material or coated with such, which reduces the susceptibility to wear.
• the spray nozzle unit has one or more spray pipes extending transversely to the wafer transport means, wherein at least one spray pipe has a plurality of spray nozzles arranged successively in the longitudinal direction of the spray pipe.
• the spray nozzles of the respective spray tube can be fed together via this spray tube.
• the spray-on fluid can be supplied to the spray tube, for example, at both tube end regions, which promotes uniform supply of the spray nozzles to the spray-on fluid, or alternatively to only one end region of the spray tube or to a center section of the spray tube.
• the spray-on-jet treatment device has a hydrocyclone for cleaning the spray-on fluid.
• An underflow of the hydrocyclone communicates with the spray fluid tank while an upper run of the hydrocyclone communicates with a last spray nozzle / spray tube of the spray nozzle unit which is transported by the wafer. This allows a minimization of contamination of the silicon wafer or a carryover of abrasive particles in a subsequent system module.
• 1 shows a flowchart of a method for producing textured silicon wafers or similar flat substrates
• 2 shows a schematic partial side view of an apparatus for producing textured silicon wafers or similar flat substrates
• FIG. 3 is a schematic partial side view of a blast-on spray treatment apparatus usable in the apparatus of FIG. 2;
• FIG. 4 shows a schematic, partial side view of the treatment device of FIG. 3 in a variant with top-side spray treatment, FIG.
• Fig. 5 is a schematic, fragmentary plan view of a in the device of
• FIG. 6 shows the view of FIG. 4 for a variant embodiment with underside spray treatment
• FIG. 7 shows the view of FIG. 4 for a variant embodiment with double-sided spray treatment
• FIG. 8 is a perspective view of one usable in the apparatus of FIG. 3.
• FIG. 8 is a perspective view of one usable in the apparatus of FIG. 3.
• FIG. 9 is a fragmentary side view of the spray nozzle unit of Fig. 8,
• FIG. 10 is a schematic block diagram representation of a part of the manufacturing apparatus of FIG. 2 with the treatment device according to FIG. 7 in a variant embodiment with a rinsing system and FIG
• FIG. 1 the representation of Fig. 10 for a variant with particle recovery system.
• a wafer block is cut into individual wafer blanks by means of a wire sawing process.
• the production of a corresponding Waferblocks and the Drahttsägevorgang can be done in a conventional manner, which requires no further explanation here.
• the wire sawing process may be, for example, one using a diamond wire saw. Alternatively, conventionally singly drawn or directly melt deposited wafer blanks may be used.
• the wire-sawn wafer blanks are then subjected in a continuous process using a horizontal roller transport system to a plurality of successive treatment processes and are first introduced for this purpose in a process step 11 into an associated continuous production plant or in short throughput plant.
• the wafer blanks are subjected to a blast-jet process, see process step 12.
• a water-based abrasion-particle suspension is sprayed onto the upper side and / or the underside of the wafer blanks.
• the surface in question is roughened, and, as it turns out, without significant material removal.
• the reflectance of the surface can thus be adjusted with a subsequent HF / HNO3 standard texture e.g. to a value below 23%.
• the wafer blanks are further processed after their blast-jet blast treatment, so as to produce from them the desired textured silicon wafers and end products thereof, e.g. Solar cell components are formed.
• the processes required for this purpose are again conventional and require no further explanation in the present case.
• an additional texture-etching etching treatment in particular a conventional acid wet-chemical etching treatment, can be applied to the spray-on-radiation treatment, for example. using a standard texture etching solution with HF / HNO3, as well as a wafer cleaning treatment.
• Fig. 2 shows schematically and in sections a present interest part of a continuous system, with which the method of FIG. 1 is feasible.
• the pass-through system can, for example, have a plurality of parallel pass tracks, eg five tracks for silicon wafers of conventional size, for example with a dimension of 156 mm ⁇ 156 mm, have.
• the through-flow plant comprises one or more process vessels 20 with an optional spray system 21 and with a horizontal roll transport system 22.
• the process vessels 20 are equipped, as needed, with trays having a steep slope to avoid settling of particles.
• FIG. 1 shows schematically and in sections a present interest part of a continuous system, with which the method of FIG. 1 is feasible.
• the pass-through system can, for example, have a plurality of parallel pass tracks, eg five tracks for silicon wafers of conventional size, for example with a dimension of 156 mm ⁇ 156 mm, have.
• the through-flow plant comprises one or more process vessels 20 with an optional spray system 21
• a pre-rinsing module 23 with particle recovery, a cascade rinsing module 24 and a drying module 25 for cleaning and drying the flat substrates processed in the continuous-flow system can be optionally attached to the process containers 20 arranged in the direction of passage or transport direction T of the wafers. like wafers for solar cell production, connect.
• FIG. 3 schematically shows a spray-jet treatment apparatus which can be used in the continuous-flow installation of FIG. 2 and has a treatment module 26 which has a suitable lateral passage 27 for the horizontal roller transport system.
• a user 28 may control the effervescent jet treatment device via an optional treatment control unit 29.
• the treatment device comprises a spray fluid tank 30, preferably arranged separately from the treatment module 26, with associated pumps 31 for circulating an abrasive spray fluid stored in the tank 30.
• the spray fluid tank 30 may be provided with sloping floors and / or a mixing system, e.g. be equipped with an injector nozzles or an agitator using an additional pump to hold suspended abrasive particles suspended in the abrasive spray fluid in the fluid.
• a water-based abrasive particle suspension is used, in which the abrasive particles are contained in the form of a suspension in water as a carrier liquid.
• abrasive particles are preferably used corundum or diamond or silicon carbide particles or any mixture thereof.
• an average particle size between 5 ⁇ and 150 ⁇ is preferably selected, in particular between 40 ⁇ and 80 ⁇ .
• the abrasive particles are contained in the Abrasionsp firmwaresuspension in a particle concentration which is preferably between 10 wt .-% and 60 wt .-%, in particular between 25 wt .-% and 35 wt .-%.
• the abrasive particle suspension is preferably added with a viscosity-increasing additive.
• the additive causes the particles to be well levitated and do not sediment or agglomerate.
• Polyethylene glycol in particular polyethylene glycol 200-10,000, or hydroxyethyl cellulose or hydroxymethyl cellulose or xanthan or any desired mixture of several of these substances is suitable as an additive for this purpose.
• a spray pressure between 0.5 bar and 3 bar is preferably set, in particular between 0.8 bar and 1.2 bar.
• FIGS. 4 to 7 illustrate various embodiments of the spray-jet treatment device in order to selectively expose the wafer blanks to the spray-out jet only on their upper side, only on their lower side or on both sides on their upper side and their lower side.
• FIGS. 4 and 5 specifically illustrate an alternative embodiment for the one-sided spray jet treatment of the silicon wafers on their upper side.
• the horizontal roller transport system comprises transport rollers in the form of underside carrying rollers 32 and top holding-down rollers 33. Silicon wafers 34 to be treated can be placed on the carrying rollers 32 with their underside.
• the hold-down rollers 33 are used to hold down the silicon wafer 34 against the support rollers 32nd
• the treatment device includes a spray nozzle unit 36 with preferably a plurality of spray nozzles or spray tubes for respectively generating a spray jet 35 of the spray particle tank suspension stored in the spray fluid tank 30 according to FIG. 3, directed toward the top of the silicon wafer 34 substantially vertically in Fig. 4 schematically and representatively a spray tube 36a is shown.
• the roller transport system has a support reinforcement 38 for the continuously transported silicon wafers 34 at a location opposite to a spray jet impact position 37 on the underside.
• the support reinforcement 38 is that the support roller 32a located there wider rollers 38a has, which sit non-rotatably on a transport shaft 40. In the other support rollers 32 are sitting narrower rollers 39 on the transport shaft 40th
• the support rollers 32, 32a in the transport direction T are arranged at a relatively small distance such that the rollers 38a, 39 of a respective support roller 32, 32a in spaces between the rollers 38a, 39 of a respective adjacent Support roller 32, 32a engage, including the rolls 38a, 39 are arranged at a suitable distance from each other on the respective transport shaft 40.
• This enables a gentle transport, in particular for sensitive, fragile substrates, such as silicon wafers with a relatively small thickness.
• the wider rolls 38a securely support the silicon wafers 34 against the pressure or momentum of the spray jet 35, preventing any breakage of the silicon wafers 34.
• the roller transport system has a gap in each case in the region below a spray nozzle or a spray tube 36a, so that the spray jet 35 from the spray nozzle or the spray tube 36a directly onto the side or surface to be treated transported silicon wafer 34 meets, without this being hindered by the transport rollers, in this case especially the top-side hold-down rollers 33.
• the silicon wafers 34 are exposed to the abrasive spray jet treatment only on their underside.
• the spray nozzle unit 36 is arranged with its one or more spray nozzles or spray tubes 36a below the transport plane of the silicon wafer 34, and the spray jet 35 is directed in this case substantially vertically upward.
• the arrangement of the bottom support rollers 32 has a gap through which the spray jet 35 from the spray nozzle unit 36 can reach directly on the underside of the silicon wafer 34.
• one of the Sprühstrahlauf Economicsposition 37 top opposing hold-down roller 33a, the support reinforcement 38 in the form of widened rolls 38a for supporting the silicon wafer 34 against the pulse of the spray jet 35 on.
• the silicon wafers 34 are subjected to spray-blast treatment on both sides, ie on their upper side and on their underside.
• the spray nozzle unit 36 includes one or each a plurality of spray nozzles or spray tubes 36a both above and below the substrate transport plane to direct both a Friedrausprühstrahl 35 from the top of the wafer top and a Aufrausprühstrahl 35 from below on the wafer underside, with two spray nozzles or spray tubes 36a and a corresponding two each spray blasting 35 are preferably provided at the same height with respect to the wafer transport direction T.
• the latter has the advantage that when the silicon wafer 34 is simultaneously acted upon by the top-side spray jet 35 and the bottom-side spray jet 35, the pressure loads or the pressure pulses of the two spray jets 35 on the treated silicon wafers 34 compensate each other. This prevents deformation or bending as well as breakage even in the case of very thin, sensitive silicon wafers 34, without the need for supporting measures by the roller transport system.
• the roller transport system again has a gap at the position of the respective spray jet 35, so that the spray jets 35 impinge directly on the wafer top or wafer underside to be treated.
• Figures 8 and 9 illustrate an advantageous realization for the spray nozzle unit 36 as used in the spray jet treatment apparatus of Figure 3, e.g. in one of the variants according to FIGS. 4 to 7 is usable.
• the spray nozzle unit 36 includes a respective spray module from an array of multiple spray tubes 36a, e.g. between five and fifteen spray tubes 36a, one behind the other in parallel with each other and in the wafer transport direction T, i. the tube longitudinal axes of the spray tubes 36a extend horizontally and transversely to the wafer transport direction T.
• the spray pipes are fed on both sides end.
• a spray fluid inlet port 41 a, 41 b and a distributor tube 42 a, 42 b closed on both sides are provided on both lateral end regions of the spray tube arrangement.
• the respective inlet port 41 a, 41 b opens into a central region of the associated distributor tube 42 a, 42 b, and the spray tubes 36 a open at one end into one of the two distributor tubes 42 a, 42 b on a tube jacket surface thereof.
• a very uniform supply of the spray pipes 36a with the spray particle suspension to be sprayed is achieved with a constant concentration of the abrasive particles in the individual spray pipes 36a.
• the supply of the spray pipes 36a with the abrasive particle suspension takes place via only one end region of the spray pipes 36a or in a middle region of the individual spray pipes 36a, for example via a distributor pipe arranged there.
• Each spray tube 36a is provided along its length with a plurality of spaced apart spray nozzles 43.
• the spray nozzles 43 are preferably made of a ceramic material or provided with a ceramic coating. Further, the spray nozzles 43 are preferably designed as flat jet nozzles of a conventional type and therefore not described here in detail with a spray angle ⁇ between 40 ° and 60 °, in particular between 55 ° and 65 °.
• the spray nozzles of each two in the wafer transport direction T successive spray tubes 36a are preferably arranged offset to one another, i.
• the respective spray nozzle 43 of a spray pipe 36a next to the wafer transport direction T is located between two spray nozzles 43 of the spray pipe 36a in front of it.
• the offset may be e.g. be centered, i.
• Each spray nozzle 43 of the next spray tube 36a is located centrally between two spray nozzles 43 of the previous spray tube 36a. This spray nozzle arrangement promotes a uniform spray treatment result for all treated substrates or silicon wafers transversely to the wafer transport direction T.
• the distance between the spray tubes 36a and thus also the spray nozzles 43 is to be sprayed from the silicon wafers to be sprayed. from the wafer transport plane, chosen such that the individual flat spray jets 35 emitted by the spray nozzles 43 of each spray tube 36a with the spray angle ⁇ overlap one another or overlap one another transversely to the wafer transport direction T.
• the uniformity of the spraying of the abrasive particle suspension is additionally promoted by the arrangement of the spray nozzles 43 of two successive spray pipes 36a offset in the longitudinal direction of the spray pipes 36a.
• Spray nozzle unit 36 may be arranged above and / or below the wafer transport plane, as defined by the horizontal roller transport system 22.
• FIG. 10 shows schematically a treatment device with double-sided spray-blasting treatment of the silicon wafers 34 in the manner of FIG. 7 with an additional flushing system.
• a pump 45 via a feed line 44, the Aufrausprühfluid from the tank 30 of the spray nozzle unit 36 to.
• a branch line 46 Via a branch line 46, a partial flow of Aufrausprühfluids a hydrocyclone 47 is fed.
• a concentrate which accumulates in an underflow of the hydrocyclone 47 is returned to the tank via a return line 48.
• Liquid purified in the hydrocyclone 47 is supplied from an upper course of the hydrocyclone 47 via a rinse feed line 49 to a spray tube 50 at the rear end region of the spray-on spray device in the wafer transport direction T.
• the supplied liquid emerges in the form of a flushing jet 51, which is inclined at a relatively small, acute angle vertically opposite to the running direction of the treated silicon wafer 34 given by the transport direction T.
• the spray tube 50 is located above the wafer transport plane of the roller transport system 22, not shown in FIG. 10, with the purge jet 51 being directed to the top of the pre-sputtered silicon wafer 34.
• possibly remaining abrasion particles 52 are rinsed off from the wafer surface on the upper side of the treated wafers 34 and remain in the blast-jet treatment device. This prevents the abrasive particles 52 from being significantly trapped in subsequent treatment units, e.g. in a subsequent rinse treatment module 53, which is equipped with corresponding cleaning / rinsing tubes 54.
• Fig. 1 1 illustrates an embodiment of a continuous system with a particle recovery system.
• the pre-spray jet treatment device in which the silicon wafers 34 are subjected to a double-jet spray treatment by means of the spray nozzle unit 36, a pre-rinse module 55.
• the Aufrausprühfluid stored in the tank 30 is in turn supplied via the supply line 44 and the conveying / circulating pump 45 of the spray nozzle unit 36.
• the pre-rinse module 55 has pre-rinse nozzles or pre-rinse pipes 56 with which the previously described silicon wafers 34 subjected to spray-jet treatment can be subjected to a two-sided pre-rinsing treatment, with these pre-rinse nozzles or pre-rinse pipes 56 being supplied with a corresponding pre-rinse fluid from a pre-rinse tank 57 via an associated feed pump 58.
• the pre-rinse fluid or rinse water is then passed from the pre-rinse module 55 via a return line 59 in a return tank 60.
• the rinse water collected there is continuously fed via a feed pump 61 to a hydrocyclone 47 'in the manner of the hydrocyclone 47 in the embodiment of FIG.
• From the lower reaches of the hydrocyclone 47 'associated concentrate is passed via a return line 62 into the tank 30 with the Aufrausprühfluid.
• excess water is returned to the surface of the tank 30 with an associated feed pump 63 back into the return tank 60.
• Purified liquid is passed from the upper run of the hydrocyclone 47 'in the pre-rinse tank 57.
• the silicon wafers 34 can always be rinsed off with pre-cleaned pre-rinse fluid or rinsing water, which leads to a carry-over of the abrasion particles, e.g. avoids or reduces in a subsequent cascade rinse module.
• any particles entrained from the spray-on process by means of the pre-rinse module 55 can be completely or in each case largely recovered and returned again.

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• 2017
  • 2017-03-10 DE DE102017203977.9A patent/DE102017203977A1/de not_active Withdrawn
• 2018
  • 2018-03-07 WO PCT/EP2018/055588 patent/WO2018162546A1/de active Application Filing
  • 2018-03-07 CN CN201880017171.1A patent/CN110383495A/zh active Pending
  • 2018-03-07 EP EP18710415.3A patent/EP3593387A1/de not_active Withdrawn
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