WO2018090637A1 - Maximal magnetic field measurement method and device - Google Patents
Maximal magnetic field measurement method and device Download PDFInfo
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- WO2018090637A1 WO2018090637A1 PCT/CN2017/090549 CN2017090549W WO2018090637A1 WO 2018090637 A1 WO2018090637 A1 WO 2018090637A1 CN 2017090549 W CN2017090549 W CN 2017090549W WO 2018090637 A1 WO2018090637 A1 WO 2018090637A1
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- 238000005259 measurement Methods 0.000 description 7
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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- the invention relates to the field of magnetic field measurement technology, in particular to a method for measuring the magnetic field strength in a very wide range.
- the tunneling magnetoresistive resistor has good linearity when the magnetic field to be measured is small, and the measurement accuracy is good.
- the tunneling magnetoresistance reference The layer magnetic domain undergoes significant rotation, and the tunneling magnetoresistive resistor enters the saturation region.
- the existing measurement methods can not adapt to the measurement of the maximum magnetic field at all, and a new method for measuring the maximum magnetic field needs to be proposed.
- the technical problem to be solved by the present invention is to provide a method and apparatus for measuring a maximum magnetic field in view of the above problems.
- the invention provides a method for measuring a maximum magnetic field, comprising:
- Step 1 placing four orthogonally configured tunneling magnetoresistance resistors into the applied magnetic field and obtaining the resistance values of the respective tunneling magnetoresistive resistors; the first tunneling magnetoresistive resistor and the third tunneling magnetoresistive resistor are located in one In a straight line, the second tunneling magnetoresistive resistor and the fourth tunneling magnetoresistive resistor are located on another straight line, and the one straight line is perpendicular to the other straight line;
- Step 2 Calculate an angle between the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer according to the resistance values of the four tunneling magnetoresistance resistors;
- Step 3 Calculating the magnetic field of the applied magnetic field according to the angle between the magnetization direction of the free layer of the first tunneling magnetoresistive resistor and the magnetization direction of the reference layer and the angle between the magnetization direction of the free layer of the third tunneling reluctance resistor and the magnetization direction of the reference layer The intensity H 1 and the direction ⁇ 1 ; the angle between the magnetization direction of the free layer of the second tunneling reluctance resistance and the magnetization direction of the reference layer and the angle between the magnetization direction of the free layer of the fourth tunneling reluctance resistor and the magnetization direction of the reference layer Calculating the magnetic field strength H 2 and the direction ⁇ 2 of the applied magnetic field;
- Step 4 Determine the final magnetic field strength H of the applied magnetic field according to the magnetic field strength H 1 and the magnetic field strength H 2 , and determine the final direction ⁇ of the applied magnetic field according to the direction ⁇ 2 and the direction ⁇ 1 .
- step 2 the angle equation between the magnetization direction of the free layer and the magnetization direction of the reference layer is calculated according to the resistance value of the tunneling magnetoresistive resistance:
- the value is the smallest, which is R min ; when the magnetization direction of the free layer is opposite to the magnetization direction of the reference layer, the resistance of the tunneling magnetoresistive resistance is the largest, which is R max ;
- the angle between the magnetization direction of the tunneling magnetoresistive free layer and the magnetization direction of the reference layer; R is the resistance value of the tunneling magnetoresistive resistor in the applied magnetic field.
- step 3 the calculation formula of the magnetic field strength H 1 and the direction ⁇ 1 is:
- H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the first tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the third tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
- step 3 the calculation formula of the magnetic field strength H 2 and the direction ⁇ 2 is:
- H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the second tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the fourth tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
- step 4 the step of determining the final magnetic field strength H and the final direction ⁇ of the applied magnetic field in step 4 Further included,
- the invention provides a maximum magnetic field measuring device, comprising:
- a tunneling magnetoresistive resistor value obtaining module is configured to obtain a resistance value of four tunneling magnetoresistive resistors arranged orthogonally in the applied magnetic field; wherein the first tunneling magnetoresistive resistor and the third tunneling magnetoresistive resistor are located in a strip In a straight line, the second tunneling magnetoresistive resistor and the fourth tunneling magnetoresistive resistor are located on another straight line, and the one straight line is perpendicular to the other straight line;
- a magnetic field strength and direction pre-calculation module for an applied magnetic field, the angle between the free layer magnetization direction of the first tunneling magnetoresistive resistor and the magnetization direction of the reference layer, and the free layer magnetization direction and reference layer of the third tunneling magnetoresistive resistor
- the angle between the magnetization directions is used to calculate the magnetic field strength H 1 and the direction ⁇ 1 of the applied magnetic field; the angle between the magnetization direction of the free layer of the second tunneling reluctance resistor and the magnetization direction of the reference layer and the free layer of the fourth tunneling reluctance resistance Calculating the magnetic field strength H 2 and the direction ⁇ 2 of the applied magnetic field by the angle between the magnetization direction and the magnetization direction of the reference layer;
- the magnetic field strength and direction determining module of the applied magnetic field is configured to determine the final magnetic field strength H of the applied magnetic field according to the magnetic field strength H 1 and the magnetic field strength H 2 , and determine the final direction ⁇ of the applied magnetic field according to the direction ⁇ 2 and the direction ⁇ 1 .
- the calculation module for the angle between the magnetization direction of the free layer of the tunneling magnetoresistive resistor and the magnetization direction of the reference layer is further used to calculate an angle equation between the magnetization direction of the free layer and the magnetization direction of the reference layer according to the resistance value of the tunneling magnetoresistive resistor:
- the value is the smallest, which is R min ; when the magnetization direction of the free layer is opposite to the magnetization direction of the reference layer, the resistance of the tunneling magnetoresistive resistance is the largest, which is R max ;
- the angle between the magnetization direction of the tunneling magnetoresistive free layer and the magnetization direction of the reference layer; R is the resistance value of the tunneling magnetoresistive resistor in the applied magnetic field.
- H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the first tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the third tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
- H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the second tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the fourth tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
- the magnetic field strength and direction determining module of the applied magnetic field determines the final magnetic field strength H and the final direction ⁇ of the applied magnetic field using the following formula:
- the method of measuring the maximum magnetic field realizes accurate measurement of the maximum magnetic field and expands the measurement range of the magnetic field strength of the tunneling magnetoresistive resistor.
- Figure 1 is a distribution diagram of tunneling reluctance resistance in an applied magnetic field.
- Figure 2 shows the vector diagram of the maximum magnetic field measurement.
- resistors four orthogonally arranged tunneling magnetoresistance resistors (hereinafter referred to as resistors) are placed in an external magnetic field, and the arrangement is as shown in FIG.
- the resistor R1 and the resistor R3 are located on a straight line, and the resistor R2 and the resistor R4 are located on another straight line, and the two straight lines are orthogonal.
- the maximum magnetic field measurement profile of the four tunneling reluctance resistors is as shown in FIG. Taking the bias reference layer bias field direction as the reference direction, the four resistors are sequentially rotated by 90° orthogonally.
- H ⁇ is the amplitude and direction of the applied magnetic field
- FL is the combined direction of the magnetization directions of the free layers of the four resistors, which can be approximated to be the same as the direction of the applied magnetic field
- four vectors H BR represent the reference of the four magnetoresistance resistors.
- the amplitude and direction of the internal bias field of the layer are the same in the present embodiment.
- the internal bias field of the reference layer is considered to be the same, and the reference layer of the adjacent two magnetoresistive resistors is internally biased.
- the field direction is orthogonal; RL 1, 2, 3, and 4 are respectively represented as reference layer magnetization directions of four resistors, which are consistent with the combined magnetic field and the combined direction of the internal bias field of the respective reference layer; The angle between the magnetization direction of the four resistance free layers and the magnetization direction of the reference layer.
- the magnitude and direction of the applied magnetic field can be calculated from two of the above equations.
- only two resistors cannot calculate the magnetic field of the entire two-dimensional plane.
- the applied magnetic field is mirror-symmetric when the temperature ranges from 0° to 180° and 180° to 360°. Use the other two resistors to determine the range of the applied magnetic field, and then select the appropriate two resistors for calculation.
- resistor R1 and resistor R3 as a group, it can be calculated:
- H 1 and ⁇ 1 are the magnitude and direction of the applied magnetic field calculated by R 1 and R 3 , respectively.
- resistor R2 and resistor R4 as another group, it can be calculated:
- H 2 and ⁇ 2 are the magnitude and direction of the applied magnetic field calculated by R2 and R4, respectively.
- the magnitude and direction of the applied magnetic field can be obtained as:
- the angle between the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer is obtained by the following formula.
- the resistance of the tunneling magnetoresistive resistor depends on the angle between the magnetization direction of the free layer and the magnetization direction of the reference layer. When the magnetization directions of the free layer and the reference layer are the same, the resistance value is the smallest, which is R min . When the magnetization directions of the free layer and the reference layer are opposite, the resistance value is the largest, which is R max . R min and R max can be obtained by calibration.
- R avg (R max +R min )/2 is the average resistance
- ⁇ max (R max -R min )/R avg is the maximum magnetoresistance change rate.
- the present invention also provides a software system corresponding to the steps of the above method.
- the invention is not limited to the specific embodiments described above.
- the invention extends to any new feature or any new combination disclosed in this specification, as well as any novel method or process steps or any new combination disclosed.
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Abstract
A maximal magnetic field measurement method and device. The method comprises: 1. disposing four orthogonally configured tunneling magnetic resistance resistors in an external magnetic field, and acquiring a resistance value of each tunneling magnetic resistance resistor; 2. calculating an included angle between a free layer magnetization direction and a reference layer magnetization direction of each tunneling magnetic resistance resistor according to the resistance values of the four tunneling magnetic resistance resistors; 3. calculating a magnetic field intensity H1 and a direction θ1 of the external magnetic field according to the included angles between the free layer magnetization directions and the reference layer magnetization directions of a first tunneling magnetic resistance resistor (R1) and a third tunneling magnetic resistance resistor (R3), and calculating a magnetic field intensity H2 and a direction θ2 of the external magnetic field according to the included angles between the free layer magnetization directions and the reference layer magnetization directions of a second tunneling magnetic resistance resistor (R2) and a fourth tunneling magnetic resistance resistor (R4); and 4. determining the final magnetic field intensity H according to the magnetic field intensity H1 and the magnetic field intensity H2, and determining the final direction θ of the external magnetic field according to the direction θ1 and the direction θ2.
Description
本发明涉及磁场测量技术领域，尤其是一种针对极大范围的磁场强度的测量方法。The invention relates to the field of magnetic field measurement technology, in particular to a method for measuring the magnetic field strength in a very wide range.
隧穿磁阻电阻在待测磁场较小时具有良好的线性度，测量精度较好，当外界磁场极大(160Oe～2500Oe，Oe为磁场强度单位——奥斯特)时，隧穿磁阻参考层磁畴发生显著旋转，隧穿磁阻电阻进入饱和区。现有的测量方法完全不能适应极大磁场的测量，需要提出一种新的，适用于极大磁场测量方法。The tunneling magnetoresistive resistor has good linearity when the magnetic field to be measured is small, and the measurement accuracy is good. When the external magnetic field is extremely large (160Oe to 2500Oe, Oe is the unit of magnetic field strength - Oersted), the tunneling magnetoresistance reference The layer magnetic domain undergoes significant rotation, and the tunneling magnetoresistive resistor enters the saturation region. The existing measurement methods can not adapt to the measurement of the maximum magnetic field at all, and a new method for measuring the maximum magnetic field needs to be proposed.
发明内容Summary of the invention
本发明所要解决的技术问题是：针对上述存在的问题，提供一种适用于极大磁场测量方法及装置。The technical problem to be solved by the present invention is to provide a method and apparatus for measuring a maximum magnetic field in view of the above problems.
本发明提供的一种极大磁场测量方法，包括：The invention provides a method for measuring a maximum magnetic field, comprising:
步骤1：将四个正交配置的隧穿磁阻电阻放置到外加磁场中，并获取各个隧穿磁阻电阻的阻值；第一隧穿磁阻电阻与第三隧穿磁阻电阻位于一条直线上，第二隧穿磁阻电阻与第四隧穿磁阻电阻位于另一条直线上，所述一条直线与所述另一条直线垂直；Step 1: placing four orthogonally configured tunneling magnetoresistance resistors into the applied magnetic field and obtaining the resistance values of the respective tunneling magnetoresistive resistors; the first tunneling magnetoresistive resistor and the third tunneling magnetoresistive resistor are located in one In a straight line, the second tunneling magnetoresistive resistor and the fourth tunneling magnetoresistive resistor are located on another straight line, and the one straight line is perpendicular to the other straight line;
步骤2：根据四个隧穿磁阻电阻的阻值计算各隧穿磁阻电阻自由层磁化方向与参考层磁化方向的夹角；Step 2: Calculate an angle between the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer according to the resistance values of the four tunneling magnetoresistance resistors;
步骤3：根据第一隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第三隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H1及方向θ1；根据第二隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第四隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H2及方向θ2；
Step 3: Calculating the magnetic field of the applied magnetic field according to the angle between the magnetization direction of the free layer of the first tunneling magnetoresistive resistor and the magnetization direction of the reference layer and the angle between the magnetization direction of the free layer of the third tunneling reluctance resistor and the magnetization direction of the reference layer The intensity H 1 and the direction θ 1 ; the angle between the magnetization direction of the free layer of the second tunneling reluctance resistance and the magnetization direction of the reference layer and the angle between the magnetization direction of the free layer of the fourth tunneling reluctance resistor and the magnetization direction of the reference layer Calculating the magnetic field strength H 2 and the direction θ 2 of the applied magnetic field;
步骤4：根据磁场强度H1与磁场强度H2确定外加磁场最终的磁场强度H，根据方向θ2与方向θ1确定外加磁场最终的方向θ。Step 4: Determine the final magnetic field strength H of the applied magnetic field according to the magnetic field strength H 1 and the magnetic field strength H 2 , and determine the final direction θ of the applied magnetic field according to the direction θ 2 and the direction θ 1 .
进一步，步骤2中，根据隧穿磁阻电阻的阻值计算其自由层磁化方向与参考层磁化方向的夹角方程为：
Further, in step 2, the angle equation between the magnetization direction of the free layer and the magnetization direction of the reference layer is calculated according to the resistance value of the tunneling magnetoresistive resistance:
式中，Ravg＝(Rmax+Rmin)/2，Δmax＝(Rmax-Rmin)/Ravg，当自由层磁化方向和参考层磁化方向相同时，隧穿磁阻电阻的阻值最小，为Rmin；当自由层磁化方向和参考层磁化方向相反时，隧穿磁阻电阻的阻值最大，为Rmax；
为隧穿磁阻自由层磁化方向与参考层磁化方向的夹角；R为隧穿磁阻电阻在所述外加磁场中的阻值。Where R avg =(R max +R min )/2, Δ max =(R max -R min )/R avg , the resistance of the tunneling magnetoresistance resistance when the magnetization direction of the free layer and the magnetization direction of the reference layer are the same The value is the smallest, which is R min ; when the magnetization direction of the free layer is opposite to the magnetization direction of the reference layer, the resistance of the tunneling magnetoresistive resistance is the largest, which is R max ; The angle between the magnetization direction of the tunneling magnetoresistive free layer and the magnetization direction of the reference layer; R is the resistance value of the tunneling magnetoresistive resistor in the applied magnetic field.
进一步，步骤3中，磁场强度H1及方向θ1的计算公式为：Further, in step 3, the calculation formula of the magnetic field strength H 1 and the direction θ 1 is:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；
为第一隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第三隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the first tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the third tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
进一步，步骤3中，磁场强度H2及方向θ2的计算公式为：Further, in step 3, the calculation formula of the magnetic field strength H 2 and the direction θ 2 is:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；
为第二隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第四隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the second tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the fourth tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
进一步，步骤4中确定外加磁场最终的磁场强度H及最终的方向θ的步骤
进一步包括，Further, the step of determining the final magnetic field strength H and the final direction θ of the applied magnetic field in step 4
Further included,
H＝H1＝H2；H = H 1 = H 2 ;
本发明提供的一种极大磁场测量装置，包括：The invention provides a maximum magnetic field measuring device, comprising:
隧穿磁阻电阻阻值获取模块，用于获取外加磁场中正交配置的四个隧穿磁阻电阻的阻值；其中，第一隧穿磁阻电阻与第三隧穿磁阻电阻位于一条直线上，第二隧穿磁阻电阻与第四隧穿磁阻电阻位于另一条直线上，所述一条直线与所述另一条直线垂直；a tunneling magnetoresistive resistor value obtaining module is configured to obtain a resistance value of four tunneling magnetoresistive resistors arranged orthogonally in the applied magnetic field; wherein the first tunneling magnetoresistive resistor and the third tunneling magnetoresistive resistor are located in a strip In a straight line, the second tunneling magnetoresistive resistor and the fourth tunneling magnetoresistive resistor are located on another straight line, and the one straight line is perpendicular to the other straight line;
隧穿磁阻电阻自由层磁化方向与参考层磁化方向夹角计算模块，用于根据四个隧穿磁阻电阻的阻值计算各隧穿磁阻电阻自由层磁化方向与参考层磁化方向的夹角；A calculation module for the angle between the magnetization direction of the free layer of the tunneling magnetoresistive resistor and the magnetization direction of the reference layer, for calculating the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer according to the resistance values of the four tunneling magnetoresistance resistors angle;
外加磁场的磁场强度及方向预计算模块，用于根据第一隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第三隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H1及方向θ1；根据第二隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第四隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H2及方向θ2；a magnetic field strength and direction pre-calculation module for an applied magnetic field, the angle between the free layer magnetization direction of the first tunneling magnetoresistive resistor and the magnetization direction of the reference layer, and the free layer magnetization direction and reference layer of the third tunneling magnetoresistive resistor The angle between the magnetization directions is used to calculate the magnetic field strength H 1 and the direction θ 1 of the applied magnetic field; the angle between the magnetization direction of the free layer of the second tunneling reluctance resistor and the magnetization direction of the reference layer and the free layer of the fourth tunneling reluctance resistance Calculating the magnetic field strength H 2 and the direction θ 2 of the applied magnetic field by the angle between the magnetization direction and the magnetization direction of the reference layer;
外加磁场的磁场强度及方向确定模块，用于根据磁场强度H1与磁场强度H2确定外加磁场最终的磁场强度H，根据方向θ2与方向θ1确定外加磁场最终的方向θ。The magnetic field strength and direction determining module of the applied magnetic field is configured to determine the final magnetic field strength H of the applied magnetic field according to the magnetic field strength H 1 and the magnetic field strength H 2 , and determine the final direction θ of the applied magnetic field according to the direction θ 2 and the direction θ 1 .
隧穿磁阻电阻自由层磁化方向与参考层磁化方向夹角计算模块进一步用于，根据隧穿磁阻电阻的阻值计算其自由层磁化方向与参考层磁化方向的夹角方程为：
The calculation module for the angle between the magnetization direction of the free layer of the tunneling magnetoresistive resistor and the magnetization direction of the reference layer is further used to calculate an angle equation between the magnetization direction of the free layer and the magnetization direction of the reference layer according to the resistance value of the tunneling magnetoresistive resistor:
式中，Ravg＝(Rmax+Rmin)/2，Δmax＝(Rmax-Rmin)/Ravg，当自由层磁化方向和
参考层磁化方向相同时，隧穿磁阻电阻的阻值最小，为Rmin；当自由层磁化方向和参考层磁化方向相反时，隧穿磁阻电阻的阻值最大，为Rmax；
为隧穿磁阻自由层磁化方向与参考层磁化方向的夹角；R为隧穿磁阻电阻在所述外加磁场中的阻值。Where R avg =(R max +R min )/2, Δ max =(R max -R min )/R avg , the resistance of the tunneling magnetoresistance resistance when the magnetization direction of the free layer and the magnetization direction of the reference layer are the same The value is the smallest, which is R min ; when the magnetization direction of the free layer is opposite to the magnetization direction of the reference layer, the resistance of the tunneling magnetoresistive resistance is the largest, which is R max ; The angle between the magnetization direction of the tunneling magnetoresistive free layer and the magnetization direction of the reference layer; R is the resistance value of the tunneling magnetoresistive resistor in the applied magnetic field.
外加磁场的磁场强度及方向预计算模块计算磁场强度H1及方向θ1的公式为：The formula for calculating the magnetic field strength H 1 and the direction θ 1 by the magnetic field strength and direction pre-calculation module of the applied magnetic field is:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；
为第一隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第三隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the first tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the third tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
外加磁场的磁场强度及方向预计算模块计算磁场强度H2及方向θ2的公式为：The formula for calculating the magnetic field strength H 2 and the direction θ 2 by the magnetic field strength and direction pre-calculation module of the applied magnetic field is:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；
为第二隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第四隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors; An angle between a magnetization direction of the free layer of the second tunneling magnetoresistive resistor and a magnetization direction of the reference layer; The angle between the magnetization direction of the free layer of the fourth tunneling magnetoresistive resistor and the magnetization direction of the reference layer.
外加磁场的磁场强度及方向确定模块利用以下公式确定外加磁场最终的磁场强度H及最终的方向θ：The magnetic field strength and direction determining module of the applied magnetic field determines the final magnetic field strength H and the final direction θ of the applied magnetic field using the following formula:
H＝H1＝H2；
H = H 1 = H 2 ;
综上所述，由于采用了上述技术方案，本发明的有益效果是：In summary, due to the adoption of the above technical solutions, the beneficial effects of the present invention are:
本发明提供的极大磁场测量方法实现了对极大磁场的准确测量，扩大了隧穿磁阻电阻的磁场强度测量范围。The method of measuring the maximum magnetic field provided by the invention realizes accurate measurement of the maximum magnetic field and expands the measurement range of the magnetic field strength of the tunneling magnetoresistive resistor.
本发明将通过例子并参照附图的方式说明，其中：The invention will be illustrated by way of example and with reference to the accompanying drawings in which:
图1为外加磁场中隧穿磁阻电阻的分布图。Figure 1 is a distribution diagram of tunneling reluctance resistance in an applied magnetic field.
图2为极大磁场测量矢量图。Figure 2 shows the vector diagram of the maximum magnetic field measurement.
本说明书中公开的所有特征，或公开的所有方法或过程中的步骤，除了互相排斥的特征和/或步骤以外，均可以以任何方式组合。All of the features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner other than mutually exclusive features and/or steps.
本说明书中公开的任一特征，除非特别叙述，均可被其他等效或具有类似目的的替代特征加以替换。即，除非特别叙述，每个特征只是一系列等效或类似特征中的一个例子而已。Any feature disclosed in this specification, unless specifically stated otherwise, may be replaced by other equivalents or alternative features having similar purposes. That is, unless specifically stated, each feature is only one example of a series of equivalent or similar features.
首先，在外加磁场中放置四个正交配置的隧穿磁阻电阻(I以下简称为电阻)，布置如图1所示。其中电阻R1与电阻R3位于一条直线上，电阻R2与电阻R4位于另一条直线上，两条直线正交。First, four orthogonally arranged tunneling magnetoresistance resistors (hereinafter referred to as resistors) are placed in an external magnetic field, and the arrangement is as shown in FIG. The resistor R1 and the resistor R3 are located on a straight line, and the resistor R2 and the resistor R4 are located on another straight line, and the two straight lines are orthogonal.
根据上述布置，四个隧穿磁阻电阻的极大磁场测量分布图如图2所示。以电阻参考层偏置场方向为参考方向，四个电阻依次旋转90°正交布置。图中H，θ为外加磁场幅值和方向；FL为四个电阻的自由层磁化方向的合成方向，可近似认为均和外加磁场方向相同；四个矢量HBR表示四个磁阻电阻的参考层内部
偏置场的幅值和方向，本实施例中四个磁阻电阻相同，因此认为它们的参考层内部偏置场幅值相同，相邻的两个磁阻电阻的参考层内部偏置场方向正交；RL1,2,3,4分别表示为四个电阻的参考层磁化方向，其与外加磁场和各自的参考层内部偏置场的合成方向一致；
为四个电阻自由层磁化方向和参考层磁化方向的夹角。According to the above arrangement, the maximum magnetic field measurement profile of the four tunneling reluctance resistors is as shown in FIG. Taking the bias reference layer bias field direction as the reference direction, the four resistors are sequentially rotated by 90° orthogonally. In the figure, H, θ is the amplitude and direction of the applied magnetic field; FL is the combined direction of the magnetization directions of the free layers of the four resistors, which can be approximated to be the same as the direction of the applied magnetic field; four vectors H BR represent the reference of the four magnetoresistance resistors. The amplitude and direction of the internal bias field of the layer are the same in the present embodiment. Therefore, the internal bias field of the reference layer is considered to be the same, and the reference layer of the adjacent two magnetoresistive resistors is internally biased. The field direction is orthogonal; RL 1, 2, 3, and 4 are respectively represented as reference layer magnetization directions of four resistors, which are consistent with the combined magnetic field and the combined direction of the internal bias field of the respective reference layer; The angle between the magnetization direction of the four resistance free layers and the magnetization direction of the reference layer.
由图2的矢量关系，可得四个芯片磁化方向和外加磁场的关系为：From the vector relationship of Figure 2, the relationship between the magnetization direction of the four chips and the applied magnetic field is as follows:
外加磁场的幅值和方向可通过上述方程组的其中两个计算得到。然而仅有两个电阻无法计算整个二维平面的磁场，如当选择电阻R1和电阻R3计算外加磁场时，显然外加磁场为0°～180°和180°～360°时镜面对称，因此必须先借助另外两个电阻判断外加磁场方向范围，然后选择合适的两个电阻进行计算。The magnitude and direction of the applied magnetic field can be calculated from two of the above equations. However, only two resistors cannot calculate the magnetic field of the entire two-dimensional plane. For example, when the resistor R1 and the resistor R3 are selected to calculate the applied magnetic field, it is obvious that the applied magnetic field is mirror-symmetric when the temperature ranges from 0° to 180° and 180° to 360°. Use the other two resistors to determine the range of the applied magnetic field, and then select the appropriate two resistors for calculation.
以电阻R1和电阻R3作为一组，可计算得到：Taking resistor R1 and resistor R3 as a group, it can be calculated:
式中，H1，θ1分别为通过R1和R3计算得到的外加磁场幅值和方向。Where H 1 and θ 1 are the magnitude and direction of the applied magnetic field calculated by R 1 and R 3 , respectively.
以电阻R2和电阻R4作为另一组，可计算得到：Taking resistor R2 and resistor R4 as another group, it can be calculated:
式中，H2，θ2分别为通过R2和R4计算得到的外加磁场幅值和方向。
Where H 2 and θ 2 are the magnitude and direction of the applied magnetic field calculated by R2 and R4, respectively.
通过比较比较上述两式的角度，可得外加磁场幅值和方向为：By comparing and comparing the angles of the above two equations, the magnitude and direction of the applied magnetic field can be obtained as:
H＝H1＝H2
H=H 1 =H 2
上述公式中，各个隧穿磁阻电阻自由层磁化方向与参考层磁化方向的夹角是用以下公式求得的。In the above formula, the angle between the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer is obtained by the following formula.
隧穿磁阻电阻的阻值取决于其自由层磁化方向和参考层磁化方向的夹角。当自由层和参考层磁化方向相同时，电阻值最小，为Rmin，当自由层和参考层磁化方向相反时，电阻值最大，为Rmax。Rmin及Rmax可由标定得到。The resistance of the tunneling magnetoresistive resistor depends on the angle between the magnetization direction of the free layer and the magnetization direction of the reference layer. When the magnetization directions of the free layer and the reference layer are the same, the resistance value is the smallest, which is R min . When the magnetization directions of the free layer and the reference layer are opposite, the resistance value is the largest, which is R max . R min and R max can be obtained by calibration.
在外加磁场中隧穿磁阻电阻的电阻值R与自由层、参考层磁化方向的关系为：The relationship between the resistance value R of the tunneling magnetoresistive resistor and the magnetization direction of the free layer and the reference layer in the applied magnetic field is:
式中，Ravg＝(Rmax+Rmin)/2为平均电阻，Δmax＝(Rmax-Rmin)/Ravg为最大磁电阻变化率。In the formula, R avg =(R max +R min )/2 is the average resistance, and Δ max =(R max -R min )/R avg is the maximum magnetoresistance change rate.
本发明还提供了一套与上述方法步骤一一对应的软系统。The present invention also provides a software system corresponding to the steps of the above method.
本发明并不局限于前述的具体实施方式。本发明扩展到任何在本说明书中披露的新特征或任何新的组合，以及披露的任一新的方法或过程的步骤或任何新的组合。
The invention is not limited to the specific embodiments described above. The invention extends to any new feature or any new combination disclosed in this specification, as well as any novel method or process steps or any new combination disclosed.
Claims (10)
- 一种极大磁场测量方法，其特征在于，包括：A method for measuring a maximum magnetic field, comprising:步骤1：将四个正交配置的隧穿磁阻电阻放置到外加磁场中，并获取各个隧穿磁阻电阻的阻值；第一隧穿磁阻电阻与第三隧穿磁阻电阻位于一条直线上，第二隧穿磁阻电阻与第四隧穿磁阻电阻位于另一条直线上，所述一条直线与所述另一条直线垂直；Step 1: placing four orthogonally configured tunneling magnetoresistance resistors into the applied magnetic field and obtaining the resistance values of the respective tunneling magnetoresistive resistors; the first tunneling magnetoresistive resistor and the third tunneling magnetoresistive resistor are located in one In a straight line, the second tunneling magnetoresistive resistor and the fourth tunneling magnetoresistive resistor are located on another straight line, and the one straight line is perpendicular to the other straight line;步骤2：根据四个隧穿磁阻电阻的阻值计算各隧穿磁阻电阻自由层磁化方向与参考层磁化方向的夹角；Step 2: Calculate an angle between the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer according to the resistance values of the four tunneling magnetoresistance resistors;步骤3：根据第一隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第三隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H1及方向θ1；根据第二隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第四隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H2及方向θ2；Step 3: Calculating the magnetic field of the applied magnetic field according to the angle between the magnetization direction of the free layer of the first tunneling magnetoresistive resistor and the magnetization direction of the reference layer and the angle between the magnetization direction of the free layer of the third tunneling reluctance resistor and the magnetization direction of the reference layer The intensity H 1 and the direction θ 1 ; the angle between the magnetization direction of the free layer of the second tunneling reluctance resistance and the magnetization direction of the reference layer and the angle between the magnetization direction of the free layer of the fourth tunneling reluctance resistor and the magnetization direction of the reference layer Calculating the magnetic field strength H 2 and the direction θ 2 of the applied magnetic field;步骤4：根据磁场强度H1与磁场强度H2确定外加磁场最终的磁场强度H，根据方向θ2与方向θ1确定外加磁场最终的方向θ。Step 4: Determine the final magnetic field strength H of the applied magnetic field according to the magnetic field strength H 1 and the magnetic field strength H 2 , and determine the final direction θ of the applied magnetic field according to the direction θ 2 and the direction θ 1 .
- 根据权利要求1所述的一种极大磁场测量方法，其特征在于，步骤2中，根据隧穿磁阻电阻的阻值计算其自由层磁化方向与参考层磁化方向的夹角方程为：The method of measuring a maximum magnetic field according to claim 1, wherein in step 2, the angle equation between the magnetization direction of the free layer and the magnetization direction of the reference layer is calculated according to the resistance value of the tunneling magnetoresistive resistance:
式中，Ravg＝(Rmax+Rmin)/2，Δmax＝(Rmax-Rmin)/Ravg，当自由层磁化方向和参考层磁化方向相同时，隧穿磁阻电阻的阻值最小，为Rmin；当自由层磁化方向和参考层磁化方向相反时，隧穿磁阻电阻的阻值最大，为Rmax；为隧穿磁阻自由层磁化方向与参考层磁化方向的夹角；R为隧穿磁阻电阻在所述外加磁场中的阻值。Where R avg =(R max +R min )/2, Δ max =(R max -R min )/R avg , the resistance of the tunneling magnetoresistance resistance when the magnetization direction of the free layer and the magnetization direction of the reference layer are the same The value is the smallest, which is R min ; when the magnetization direction of the free layer is opposite to the magnetization direction of the reference layer, the resistance of the tunneling magnetoresistive resistance is the largest, which is R max ;
The angle between the magnetization direction of the tunneling magnetoresistive free layer and the magnetization direction of the reference layer; R is the resistance value of the tunneling magnetoresistive resistor in the applied magnetic field. - 根据权利要求1所述的一种极大磁场测量方法，其特征在于，步骤3中，磁场强度H1及方向θ1的计算公式为： A method of measuring a maximum magnetic field according to claim 1, wherein in step 3, the calculation formula of the magnetic field strength H 1 and the direction θ 1 is:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；为第一隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第三隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors;
An angle between a magnetization direction of the free layer of the first tunneling magnetoresistive resistor and a magnetization direction of the reference layer;The angle between the magnetization direction of the free layer of the third tunneling magnetoresistive resistor and the magnetization direction of the reference layer. - 根据权利要求1所述的一种极大磁场测量方法，其特征在于，步骤3中，磁场强度H2及方向θ2的计算公式为：A method for measuring a maximum magnetic field according to claim 1, wherein in step 3, the calculation formula of the magnetic field strength H 2 and the direction θ 2 is:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；为第二隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第四隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors;
An angle between a magnetization direction of the free layer of the second tunneling magnetoresistive resistor and a magnetization direction of the reference layer;The angle between the magnetization direction of the free layer of the fourth tunneling magnetoresistive resistor and the magnetization direction of the reference layer. - 根据权利要求1所述的一种极大磁场测量方法，其特征在于，步骤4中确定外加磁场最终的磁场强度H及最终的方向θ的步骤进一步包括，The method of measuring a maximum magnetic field according to claim 1, wherein the step of determining the final magnetic field strength H and the final direction θ of the applied magnetic field in step 4 further comprises:H＝H1＝H2；H = H 1 = H 2 ;
- 一种极大磁场测量装置，其特征在于，包括：A maximum magnetic field measuring device, comprising:隧穿磁阻电阻阻值获取模块，用于获取外加磁场中正交配置的四个隧穿磁阻电阻的阻值；其中，第一隧穿磁阻电阻与第三隧穿磁阻电阻位于一条直线上，第二隧穿磁阻电阻与第四隧穿磁阻电阻位于另一条直线上，所述一条直线与所述另一条直线垂直； a tunneling magnetoresistive resistor value obtaining module is configured to obtain a resistance value of four tunneling magnetoresistive resistors arranged orthogonally in the applied magnetic field; wherein the first tunneling magnetoresistive resistor and the third tunneling magnetoresistive resistor are located in a strip In a straight line, the second tunneling magnetoresistive resistor and the fourth tunneling magnetoresistive resistor are located on another straight line, and the one straight line is perpendicular to the other straight line;隧穿磁阻电阻自由层磁化方向与参考层磁化方向夹角计算模块，用于根据四个隧穿磁阻电阻的阻值计算各隧穿磁阻电阻自由层磁化方向与参考层磁化方向的夹角；A calculation module for the angle between the magnetization direction of the free layer of the tunneling magnetoresistive resistor and the magnetization direction of the reference layer, for calculating the magnetization direction of the free layer of each tunneling magnetoresistive resistor and the magnetization direction of the reference layer according to the resistance values of the four tunneling magnetoresistance resistors angle;外加磁场的磁场强度及方向预计算模块，用于根据第一隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第三隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H1及方向θ1；根据第二隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角以及第四隧穿磁阻电阻的自由层磁化方向与参考层磁化方向的夹角计算外加磁场的磁场强度H2及方向θ2；a magnetic field strength and direction pre-calculation module for an applied magnetic field, the angle between the free layer magnetization direction of the first tunneling magnetoresistive resistor and the magnetization direction of the reference layer, and the free layer magnetization direction and reference layer of the third tunneling magnetoresistive resistor The angle between the magnetization directions is used to calculate the magnetic field strength H 1 and the direction θ 1 of the applied magnetic field; the angle between the magnetization direction of the free layer of the second tunneling reluctance resistor and the magnetization direction of the reference layer and the free layer of the fourth tunneling reluctance resistance Calculating the magnetic field strength H 2 and the direction θ 2 of the applied magnetic field by the angle between the magnetization direction and the magnetization direction of the reference layer;外加磁场的磁场强度及方向确定模块，用于根据磁场强度H1与磁场强度H2确定外加磁场最终的磁场强度H，根据方向θ2与方向θ1确定外加磁场最终的方向θ。The magnetic field strength and direction determining module of the applied magnetic field is configured to determine the final magnetic field strength H of the applied magnetic field according to the magnetic field strength H 1 and the magnetic field strength H 2 , and determine the final direction θ of the applied magnetic field according to the direction θ 2 and the direction θ 1 .
- 根据权利要求6所述的一种极大磁场测量装置，其特征在于，隧穿磁阻电阻自由层磁化方向与参考层磁化方向夹角计算模块进一步用于，根据隧穿磁阻电阻的阻值计算其自由层磁化方向与参考层磁化方向的夹角方程为：A maximum magnetic field measuring device according to claim 6, wherein the tunneling magnetoresistive resistance free layer magnetization direction and the reference layer magnetization direction angle calculating module are further used for, according to the resistance value of the tunneling magnetoresistive resistor Calculate the angle equation between the magnetization direction of the free layer and the magnetization direction of the reference layer:
式中，Ravg＝(Rmax+Rmin)/2，Δmax＝(Rmax-Rmin)/Ravg，当自由层磁化方向和参考层磁化方向相同时，隧穿磁阻电阻的阻值最小，为Rmin；当自由层磁化方向和参考层磁化方向相反时，隧穿磁阻电阻的阻值最大，为Rmax；为隧穿磁阻自由层磁化方向与参考层磁化方向的夹角；R为隧穿磁阻电阻在所述外加磁场中的阻值。Where R avg =(R max +R min )/2, Δ max =(R max -R min )/R avg , the resistance of the tunneling magnetoresistance resistance when the magnetization direction of the free layer and the magnetization direction of the reference layer are the same The value is the smallest, which is R min ; when the magnetization direction of the free layer is opposite to the magnetization direction of the reference layer, the resistance of the tunneling magnetoresistive resistance is the largest, which is R max ;
The angle between the magnetization direction of the tunneling magnetoresistive free layer and the magnetization direction of the reference layer; R is the resistance value of the tunneling magnetoresistive resistor in the applied magnetic field. - 根据权利要求6所述的一种极大磁场测量装置，其特征在于，外加磁场的磁场强度及方向预计算模块计算磁场强度H1及方向θ1的公式为：A maximum magnetic field measuring device according to claim 6, wherein the magnetic field strength and direction pre-calculation module of the applied magnetic field calculates the magnetic field strength H 1 and the direction θ 1 as:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；为第一隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第三隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors;
An angle between a magnetization direction of the free layer of the first tunneling magnetoresistive resistor and a magnetization direction of the reference layer;The angle between the magnetization direction of the free layer of the third tunneling magnetoresistive resistor and the magnetization direction of the reference layer. - 根据权利要求6所述的一种极大磁场测量装置，其特征在于，外加磁场的磁场强度及方向预计算模块计算磁场强度H2及方向θ2的公式为：A maximum magnetic field measuring device according to claim 6, wherein the magnetic field strength and direction pre-calculation module of the applied magnetic field calculates the magnetic field strength H 2 and the direction θ 2 as:
式中，HBR为四个隧穿磁阻电阻的参考层内部偏置场的幅值；为第二隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角；
为第四隧穿磁阻电阻自由层磁化方向和参考层磁化方向的夹角。Where H BR is the amplitude of the internal bias field of the reference layer of the four tunneling magnetoresistive resistors;
An angle between a magnetization direction of the free layer of the second tunneling magnetoresistive resistor and a magnetization direction of the reference layer;The angle between the magnetization direction of the free layer of the fourth tunneling magnetoresistive resistor and the magnetization direction of the reference layer. - 根据权利要求6所述的一种极大磁场测量装置，其特征在于，外加磁场的磁场强度及方向确定模块利用以下公式确定外加磁场最终的磁场强度H及最终的方向θ：A maximum magnetic field measuring device according to claim 6, wherein the magnetic field strength and direction determining module of the applied magnetic field determines the final magnetic field strength H and the final direction θ of the applied magnetic field by using the following formula:H＝H1＝H2；H = H 1 = H 2 ;
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| CN106772149B (en) * | 2016-11-18 | 2018-07-06 | 清华大学 | The very big Measurement Method for Magnetic Field and device of a kind of optimization |
| CN106556806B (en) * | 2016-11-18 | 2018-03-13 | 清华大学 | A kind of greatly Measurement Method for Magnetic Field and device |
| CN114720922B (en) * | 2022-03-22 | 2025-03-11 | 泉州师范学院 | Magnetic sensing unit array and method for measuring planar two-dimensional magnetic field direction |
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| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| CN102707246A (en) * | 2011-03-28 | 2012-10-03 | 新科实业有限公司 | Method for Measuring Longitudinal Bias Magnetic Field in Tunnel Magnetoresistance Sensor |
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| Publication number | Publication date |
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| CN106556806B (en) | 2018-03-13 |
| CN106556806A (en) | 2017-04-05 |
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