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WO2017084151A1 - 量子点显示面板的制作方法 - Google Patents

量子点显示面板的制作方法 Download PDF

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Publication number
WO2017084151A1
WO2017084151A1 PCT/CN2015/098511 CN2015098511W WO2017084151A1 WO 2017084151 A1 WO2017084151 A1 WO 2017084151A1 CN 2015098511 W CN2015098511 W CN 2015098511W WO 2017084151 A1 WO2017084151 A1 WO 2017084151A1
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WIPO (PCT)
Prior art keywords
quantum dot
layer
display panel
substrate
film
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PCT/CN2015/098511
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English (en)
French (fr)
Inventor
刘国和
Original Assignee
深圳市华星光电技术有限公司
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Priority to US14/912,607 priority Critical patent/US10061154B2/en
Publication of WO2017084151A1 publication Critical patent/WO2017084151A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a quantum dot display panel.
  • Quantum Dots are usually spherical or spheroidal semiconductor nanoparticles composed of II-VI or III-V elements, and the particle size is generally between several nanometers and several tens of nanometers. Since the particle size of QDs is smaller or closer to the exciton Bohr radius of the corresponding bulk material, a quantum confinement effect is generated, and the energy level structure changes from quasi-continuous of the bulk material to discrete structure of the quantum dot material, resulting in special QDs. The performance of stimulated radiation.
  • the bandgap of the energy level increases, the energy required for the corresponding QDs to be stimulated, and the energy released by the QDs after returning to the ground state are correspondingly increased, which is manifested by the excitation and fluorescence spectra of QDs.
  • the "blue shift" phenomenon by controlling the size of the QDs, allows the luminescence spectrum to cover the entire visible region. For example, the size of cadmium selenide (CdSe) is reduced from 6.6 nm to 2.0 nm, and its emission wavelength is "blue shifted" from the red light region 635 nm to 460 nm in the blue light region.
  • the quantum dot material has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, and the use of these advantages in the display device can effectively enhance the color of the display device. Domain and color reproduction capabilities.
  • the patent CN102944943A and the patent US20150002788A1 both propose a technical solution for replacing the color filter with a color dot pattern having a pattern structure for color display purposes, but the patents do not have a method for patterning a quantum dot layer. Be explained.
  • Patent CN103226260A provides a method for dispersing quantum dots in a photoresist to pattern a quantum dot layer by a photolithography process, but the quantum dots are dispersed in the photoresist due to an initiator in the photoresist.
  • Various polymer materials such as polymer monomers, polymers, additives, etc.
  • the surface chemical environment of quantum dots is complex, which has a great influence on the luminous efficiency of quantum dots.
  • quantum dot patterns can also be produced by transfer, screen printing, etc., but the resolution of the quantum dot pattern obtained by the transfer method is not high, the edges of the pattern are jagged, and the quantum dot layer and the substrate are Adhesive force needs to be improved; and the method of inkjet printing to form a patterned quantum dot layer is very demanding on inkjet printing equipment. There are still technical barriers to ensuring the stability and printing accuracy of inkjet ink droplets, and mass production is still not possible.
  • the object of the present invention is to provide a method for manufacturing a quantum dot display panel, which has simple material preparation and manufacturing process, high graphic resolution, large-scale mass production, cost saving and process time.
  • the present invention provides a method for fabricating a quantum dot display panel, comprising the following steps:
  • Step 1 The surface-modified red quantum dots, the surface-modified green quantum dots, the alkali-soluble resin, the solvent, the dispersing agent, and the additive are uniformly mixed in a certain ratio to obtain a quantum dot resin composition;
  • Step 2 providing a color filter substrate, the color film substrate comprising a base substrate, a black matrix on the base substrate, and a color filter layer, wherein the color filter layer comprises a red color resist layer and a green color resist a layer, and a transparent photoresist layer;
  • the quantum dot resin composition is uniformly coated on one side of the color filter layer of the color filter substrate by spin coating or slit coating, and then, the quantum dot resin composition is coated
  • the color filter substrate is prebaked at a temperature of 100-150 ° C to remove the organic solvent in the quantum dot resin composition to obtain a quantum dot film;
  • Step 3 performing a patterning process on the quantum dot film by using a yellow light process or a dry etching process, removing a portion of the quantum dot film corresponding to the transparent photoresist layer, and obtaining a quantum dot layer, thereby completing Fabrication of quantum dot color film substrates;
  • Step 4 providing a TFT substrate, respectively providing an upper polarizer and a lower polarizer on the quantum dot color film substrate and the TFT substrate; and obtaining a quantum dot display panel after the liquid crystal forming process;
  • the quantum dot display panel includes a quantum dot color film substrate, a TFT substrate disposed opposite to the quantum dot color film substrate, a liquid crystal layer sealed between the quantum dot color film substrate and the TFT substrate, and located at the quantum dot An upper polarizer on one side of the color filter substrate and a lower polarizer on the side of the TFT substrate.
  • the quantum dot film is patterned by a yellow light process, and the step 3 specifically includes the following steps:
  • Step 31 uniformly coating a transparent photoresist material on the quantum dot film obtained by pre-baking by spin coating or slit coating;
  • Step 32 providing a photomask, exposing and developing the transparent photoresist material by using a photomask, the photomask including a transparent portion corresponding to the red color resist layer and the green color resist layer, and corresponding to the transparent An opaque portion of the photoresist layer; during exposure, the transparent photoresist material under the transparent portion is polymerized under illumination to be cured, and the transparent photoresist material under the opaque portion The polymerization does not occur and is not cured. During the development process, the cured transparent photoresist material is not washed away by the developer, and the corresponding portion of the quantum dot film underneath is also retained. And the uncured photoresist material and the corresponding portion of the quantum dot film located thereunder are washed away by the developer; thereby obtaining a patterned quantum dot layer and a photoresist layer thereon;
  • Step 33 Baking the color filter substrate at a temperature of 150-250 ° C to sufficiently cure the quantum dot layer.
  • the quantum dot film is patterned by a yellow light process in combination with a dry etching process, and the step 3 specifically includes the following steps:
  • the color film substrate is baked at a temperature of 200-250 ° C, so that the quantum dot film is sufficiently cured;
  • Step 32 ′ uniformly coating a transparent photoresist material on the quantum dot film by spin coating or slit coating; providing a photomask, and performing the transparent photoresist material by using a photomask Exposing and developing to obtain a patterned photoresist layer;
  • the photomask includes a light transmitting portion corresponding to the red color resist layer and the green color resist layer, and an opaque portion corresponding to the transparent photoresist layer;
  • Step 33 ′ using the photoresist layer as a shielding layer, and processing the color filter substrate by a dry etching process.
  • the quantum dot film is located in the red color resist layer and green a portion of the color resist layer is protected by the photoresist layer so as not to be etched away during the dry etching process, and a portion of the quantum dot film located on the transparent photoresist layer is not covered by the photoresist layer The protection is thus etched away during the dry etching process to obtain a patterned quantum dot layer.
  • the red quantum dots and the green quantum dots in the quantum dot resin composition are one or more of a II-VI semiconductor material, a III-V semiconductor material, and a IV-VI nano semiconductor material.
  • the red quantum dots and the green quantum dots have a particle diameter of 1-10 nm.
  • the alkali-soluble resin is composed of a copolymer of styrene and maleic anhydride, or a mixture of styrene and an aromatic acid (meth)acrylate.
  • the solvent is formic acid, acetic acid, chloroform, acetone, methyl ethyl ketone, fatty alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether.
  • Ethyl diacetate diethyl ether ethyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, ⁇ -butyrolactone, 3-ethyl ether propionate, butyl carbitol, One or more of butyl carbitol, acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexane, xylene, and isopropanol.
  • the quantum dot resin composition is coated on the color filter substrate to a thickness of 1 ⁇ m to 200 ⁇ m.
  • the upper polarizer is of a built-in type, and the upper polarizer is disposed on a side of the quantum dot color film substrate facing the TFT substrate;
  • the polarizer is a dye-based polarizer.
  • the lower polarizer is a built-in or external type, and the lower polarizer is disposed on the TFT substrate facing or away from the quantum dot color film.
  • One side of the substrate; the polarization direction of the lower polarizer is perpendicular to the polarization direction of the upper polarizer.
  • the quantum dot display panel obtained in the step 4 is used in a display device whose backlight is blue light.
  • the invention also provides a method for manufacturing a quantum dot display panel, comprising the following steps:
  • Step 1 The surface-modified red quantum dots, the surface-modified green quantum dots, the alkali-soluble resin, the solvent, the dispersing agent, and the additive are uniformly mixed in a certain ratio to obtain a quantum dot resin composition;
  • Step 2 providing a color filter substrate, the color film substrate comprising a base substrate, a black matrix on the base substrate, and a color filter layer, wherein the color filter layer comprises a red color resist layer and a green color resist a layer, and a transparent photoresist layer;
  • the quantum dot resin composition is uniformly coated on one side of the color filter layer of the color filter substrate by spin coating or slit coating, and then, the quantum dot resin composition is coated
  • the color filter substrate is prebaked at a temperature of 100-150 ° C to remove the organic solvent in the quantum dot resin composition to obtain a quantum dot film;
  • Step 3 performing a patterning process on the quantum dot film by using a yellow light process or a dry etching process, removing a portion of the quantum dot film corresponding to the transparent photoresist layer, and obtaining a quantum dot layer, thereby completing Fabrication of quantum dot color film substrates;
  • Step 4 providing a TFT substrate, respectively providing an upper polarizer and a lower polarizer on the quantum dot color film substrate and the TFT substrate; and obtaining a quantum dot display panel after the liquid crystal forming process;
  • the quantum dot display panel includes a quantum dot color film substrate, a TFT substrate disposed opposite to the quantum dot color film substrate, a liquid crystal layer sealed between the quantum dot color film substrate and the TFT substrate, and located at the quantum dot An upper polarizer on one side of the color filter substrate; and a lower polarizer on a side of the TFT substrate;
  • the red quantum dots and the green quantum dots in the quantum dot resin composition are one of a II-VI semiconductor material, a III-V semiconductor material, and an IV-VI nano semiconductor material. Or a plurality of, the red quantum dots and the green quantum dots have a particle diameter of 1-10 nm;
  • the alkali-soluble resin is composed of a copolymer of styrene and maleic anhydride, or a mixture of styrene and an aromatic acid (meth) acrylate half ester;
  • the solvent is formic acid, acetic acid, chloroform, acetone, methyl ethyl ketone, fatty alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol single Dibutyl ether, diethylene glycol diethyl ether ethyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, ⁇ -butyrolactone, propionic acid-3-ethyl ether, butyl carbene
  • the present invention provides a method of fabricating a quantum dot display panel,
  • the resin composition containing the surface-modified red and green quantum dots is prepared by a conventional yellow light process of a color filter or a dry etching process to obtain a quantum dot layer having a finer pattern structure, and other existing
  • the invention has the advantages of simple raw material preparation and manufacturing process, high graphic resolution, large-scale mass production, etc., which saves cost and process time, and introduces quantum dots into the color filter structure. It can effectively improve the color saturation and color gamut of the display device and enhance the color performance of the display panel.
  • FIG. 1 is a schematic flow chart of a method for fabricating a quantum dot display panel of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating a quantum dot display panel of the present invention
  • 3A is a schematic view showing exposure of a transparent photoresist material by a photomask in step 3 of the first embodiment of the method for fabricating a quantum dot display panel of the present invention
  • 3B is a schematic view showing development of a transparent photoresist material in step 3 of the first embodiment of the method for fabricating a quantum dot display panel of the present invention
  • 4A is a schematic view showing a patterned photoresist layer obtained in step 3 of the second embodiment of the method for fabricating a quantum dot display panel of the present invention
  • 4B is a schematic diagram of dry etching of a quantum dot film with a photoresist layer as a shielding layer in step 3 of the second embodiment of the method for fabricating a quantum dot display panel of the present invention
  • FIG. 5 is a schematic diagram of a quantum dot display panel prepared by the method for fabricating a quantum dot display panel of the present invention for color display in a display device.
  • the present invention provides a method for fabricating a quantum dot display panel, including the following steps:
  • Step 1 The surface-modified red quantum dots, the surface-modified green quantum dots, the alkali-soluble resin, the solvent, the dispersing agent, and the additive are uniformly mixed in a certain ratio to obtain a quantum dot resin composition;
  • the red quantum dots and the green quantum dots in the quantum dot resin composition are II-VI semiconductor materials (such as CdS, CdSe, HgTe, ZnS, ZnSe, ZnTe, HgS), III-V family.
  • II-VI semiconductor materials such as CdS, CdSe, HgTe, ZnS, ZnSe, ZnTe, HgS
  • III-V family One or more of a semiconductor material (such as InP, InAs, GaP, GaAs) and a Group IV-VI nano-semiconductor material, wherein the red quantum dots and the green quantum dots have a particle diameter of 1-10 nm.
  • the alkali-soluble resin is composed of a copolymer of styrene and maleic anhydride, or a mixture of styrene and an aromatic acid (meth)acrylate.
  • the solvent is formic acid, acetic acid, chloroform, acetone, methyl ethyl ketone, fatty alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethyl Ethyl diol diethyl ether ethyl acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, ⁇ -butyrolactone, 3-ethyl ether propionate, butyl carbitol, butyl card It is composed of one or more of alcohol, acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexane, xylene, and isopropanol.
  • Step 2 As shown in FIG. 2, a color filter substrate is provided, the color film substrate includes a base substrate 11, a black matrix 12 on the base substrate 11, and a color filter layer 13, the color filter The layer 13 includes a red color resist layer 131, a green color resist layer 132, and a transparent photoresist layer 133; the red color resist layer 131 includes a plurality of red sub-pixel units, and the green color resist layer 132 includes a plurality of green sub-pixels. a unit, the transparent photoresist layer 133 includes a plurality of transparent sub-pixel units;
  • the quantum dot resin composition is uniformly coated on one side of the color filter layer 13 of the color filter substrate by spin coating or slit coating, and then, the coating is performed.
  • the color filter substrate having the quantum dot resin composition is prebaked at a temperature of 100 to 150 ° C to remove the organic solvent in the quantum dot resin composition to obtain a quantum dot film 14 ′; specifically, the step 2
  • the thickness of the quantum dot resin composition coated on the color filter substrate is from 1 ⁇ m to 200 ⁇ m.
  • Step 3 performing a patterning process on the quantum dot film 14 ′ by using a yellow light process or a dry etching process, and removing a portion of the quantum dot film 14 ′ corresponding to the transparent photoresist layer 133 to obtain a quantum.
  • Step 4 providing a TFT substrate 20, and respectively providing an upper polarizer 41 and a lower polarizer 42 on the quantum dot color filter substrate 10 and the TFT substrate 20; and obtaining a quantum dot display panel after a liquid crystal forming process;
  • the quantum dot display panel includes a quantum dot color filter substrate 10, a TFT substrate 20 disposed opposite to the quantum dot color filter substrate 10, and a liquid crystal layer 30 sealed between the quantum dot color filter substrate 10 and the TFT substrate 20.
  • the upper polarizer 41 is of a built-in type, and the upper polarizer 41 is disposed on the quantum dot color film substrate 10 facing the TFT substrate 20 One side; the upper polarizer is a dye-based polarizer.
  • the lower polarizer 42 is of a built-in type or an external type, and the lower polarizer is disposed on the TFT substrate 20 facing or away from the quantum dot color film substrate.
  • the polarization direction of the polarizer 42 is perpendicular to the polarization direction of the upper polarizer 41.
  • the quantum dot display panel obtained in the step 4 is used in a display device whose backlight is blue light.
  • the backlight module 2 emits a blue backlight.
  • the quantum dot layer 14 mixed with red and green quantum dots emits red and green mixed light having a narrow width at half maximum, and the mixed light is then subjected to red color resistance.
  • the layer 131 and the green color resist layer 132 are respectively filtered into high-purity red and green monochromatic lights to respectively display red and green colors; and the corresponding transparent photoresist layer 133 is directly transmitted through the blue backlight because there is no quantum dot layer covering.
  • the quantum dot film 14' is patterned by a yellow light process in the step 3.
  • the step 3 specifically includes the following steps:
  • Step 31 uniformly coating a transparent photoresist material, such as W photoresist and PFA lithography, on the quantum dot film 14' obtained by pre-baking by spin coating or slit coating. Glue, etc.
  • a transparent photoresist material such as W photoresist and PFA lithography
  • Step 32 as shown in FIG. 3A-3B, a photomask 50 is provided, and the transparent photoresist material is exposed and developed by using a mask 50, and the photomask 50 includes the red color resist layer 131 and the green color.
  • the cured transparent photoresist material is not washed away by the developer, and the corresponding The portion of the quantum dot film 14' underneath is also retained, and the uncured photoresist material and the corresponding portion of the quantum dot film 14' underneath are washed away by the developer; thereby obtaining a patterned a quantum dot layer 14 and a photoresist layer 15 thereon;
  • the transparent photoresist material is cured because the photoinitiator in the transparent photoresist material promotes polymerization of the polymer monomer under the action of ultraviolet light.
  • Step 33 Baking the color filter substrate at a temperature of 150-250 ° C to sufficiently cure the quantum dot layer 14 .
  • the quantum dot film 14' is patterned by a yellow light process in combination with a dry etching process, and the step 3 specifically includes The following steps:
  • the color film substrate is baked at a temperature of 200-250 ° C, so that the quantum dot film 14' is sufficiently cured;
  • Step 32 ′ as shown in FIG. 4A , a layer of transparent photoresist material, such as W photoresist and PFA light, is uniformly coated on the quantum dot film 14 ′ by spin coating or slit coating. Engraving glue, etc.
  • a photomask 50 Providing a photomask 50, exposing and developing the transparent photoresist material by using the photomask 50 to obtain a patterned photoresist layer 15; the photomask 50 includes the red color resist layer 131 and the green color resist layer a light transmitting portion 51 of the 132, and an opaque portion 52 corresponding to the transparent photoresist layer 133;
  • Step 33 ′ as shown in FIG. 4B , using the photoresist layer 15 as a shielding layer, the color film substrate is processed by a dry etching process, and during the dry etching process, the quantum dot film 14 ′ Portions on the red color resist layer 131 and the green color resist layer 132 are covered by the photoresist layer 15 so as not to be etched away during the dry etching process, and the quantum dot film 14' is located in the A portion of the transparent photoresist layer 133 is not covered by the photoresist layer 15 to be etched away during the dry etching process, resulting in a patterned quantum dot layer 14.
  • the present invention provides a method for fabricating a quantum dot display panel, which comprises a surface-modified red and green quantum dot by an existing yellow light process of a color filter or a dry etching process.
  • the resin composition is prepared to obtain a quantum dot layer having a relatively fine pattern structure, and has the advantages of simple preparation of raw materials, simple manufacturing process, high resolution of graphics, large-scale mass production, and the like compared with other conventional methods for fabricating quantum dot display panels.
  • the cost and process time are saved, and the quantum dots are introduced into the color filter structure, which can effectively improve the color saturation and color gamut of the display device and enhance the color performance of the display panel.

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Abstract

一种量子点显示面板的制作方法，借由彩色滤光片的现有的黄光制程、或结合干法蚀刻制程将含有表面修饰的红色、绿色量子点的树脂组合物制作得到具有较为精细图形结构的量子点层，与其他现有的量子点显示面板的制作方法相比，具有原料制备及制作工艺简单、图形解析度高、可大规模量产等优点，节约了成本与制程时间，且将量子点引入彩色滤光片结构中，可有效提升显示装置的色饱和度与色域，增强显示面板的色彩表现能力。

Description

量子点显示面板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点显示面板的制作方法。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点(Quantum Dots，简称QDs)通常是由Ⅱ-Ⅵ、或Ⅲ-Ⅴ族元素组成的球形或类球形的半导体纳米微粒，粒径一般在几纳米至数十纳米之间。由于QDs的粒径尺寸小于或者接近相应体材料的激子波尔半径，会产生量子限域效应，其能级结构从体材料的准连续变为量子点材料的离散结构，导致QDs展示出特殊的受激辐射发光的性能。随着QDs的尺寸减小，其能级带隙增加，相应的QDs受激所需要的能量以及QDs受激后回到基态放出的能量都相应的增大，表现为QDs的激发与荧光光谱的“蓝移”现象，通过控制QDs的尺寸，使其发光光谱可以覆盖整个可见光区域。如硒化镉(CdSe)的尺寸从6.6nm减小至2.0nm，其发光波长从红光区域635nm“蓝移”至蓝光区域的460nm。
量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节等优点，利用这些优点将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力。如专利CN102944943A、及专利US20150002788A1均提出了用具有图案结构的量子点层替代彩色滤光膜(Color Filter)以达到彩色显示目的的技术方案，但是该些专利并未对量子点层图形化的方法进行说明。
专利CN103226260A提供了一种把量子点分散于光刻胶中，通过光刻工艺图形化量子点层的方法，但量子点分散于光刻胶中，由于光刻胶中具有起始剂(initiation)、聚合物单体(monomer)、聚合物(polymer)、添加剂(additive)等多种高分子材料，量子点的表面化学环境复杂，对量子点的发光效率影响很大。除上述方法以外，还可以通过转印、网印等方法来制作量子点图形，但是转印的方法所得到的量子点图形分辨率不高，图形边缘呈现锯齿状，并且量子点层与基体的黏着力有待提高；而喷墨打印形成图形化量子点层的方法对喷墨打印设备要求很高，如何保证喷墨墨滴的稳定性及打印精度仍有技术壁垒，仍不能大规模生产。
发明内容
本发明的目的在于提供一种量子点显示面板的制作方法，原料制备及制作工艺简单、图形解析度高、可大规模量产，节约成本与制程时间。
为实现上述目的，本发明提供了量子点显示面板的制作方法，包括如下步骤：
步骤1、将经表面修饰的红色量子点、经表面修饰的绿色量子点、碱可溶性树脂、溶剂、分散剂、及添加剂按一定比例混合均匀，得到量子点树脂组合物；
步骤2、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
采用旋涂或狭缝式涂布的方式将所述量子点树脂组合物均匀地涂布在所述彩膜基板的彩色滤光层的一侧，随后，将涂有所述量子点树脂组合物的彩膜基板在100-150℃的温度下进行预烘烤，去除量子点树脂组合物中的有机溶剂，得到量子点膜；
步骤3、采用黄光制程、或结合干法蚀刻制程对所述量子点膜进行图案化处理，去除掉所述量子点膜上对应所述透明光阻层的部分，得到量子点层，进而完成量子点彩膜基板的制作；
步骤4、提供TFT基板，在所述量子点彩膜基板与TFT基板上分别设置上偏光片与下偏光片；并经过液晶成盒制程后得到量子点显示面板；
所述量子点显示面板包括量子点彩膜基板、与所述量子点彩膜基板相对设置的TFT基板、密封于所述量子点彩膜基板与TFT基板之间的液晶层、位于所述量子点彩膜基板一侧的上偏光片、及位于所述TFT基板一侧的下偏光片。
所述步骤3中采用黄光制程对所述量子点膜进行图案化处理，所述步骤3具体包括以下步骤：
步骤31、采用旋涂或狭缝式涂布的方式在所述经预烘烤后得到量子点膜上均匀地涂布一层透明光刻胶材料；
步骤32、提供光罩，利用光罩对所述透明光刻胶材料进行曝光、显影，所述光罩包括对应所述红色色阻层和绿色色阻层的透光部分、及对应所述透明光阻层的不透光部分；在曝光过程中，位于所述透光部分下的透明光刻胶材料在光照下发生聚合反应而固化，位于所述不透光部分下的透明光刻胶材料不发生聚合反应而未固化，在显影过程时，该固化的透明光刻胶材料不会被显影液洗掉，对应的位于其下的量子点膜的部分也会被保留下 来，而未固化的光刻胶材料及对应的位于其下的量子点膜的部分会被显影液清洗掉；从而得到图案化的量子点层及位于其上的光阻层；
步骤33、在150-250℃的温度下对所述彩膜基板进行烘烤处理，以对所述量子点层进行充分固化。
所述步骤3中采用黄光制程结合干法蚀刻制程对所述量子点膜进行图案化处理，所述步骤3具体包括以下步骤：
步骤31’、经步骤2的预烘烤后，再在200-250℃的温度下对所述彩膜基板进行烘烤处理，以使得所述量子点膜充分固化；
步骤32’、采用旋涂或狭缝式涂布的方式在所述量子点膜上均匀地涂布一层透明光刻胶材料；提供光罩，利用光罩对所述透明光刻胶材料进行曝光、显影，得到图案化的光阻层；所述光罩包括对应所述红色色阻层和绿色色阻层的透光部分、及对应所述透明光阻层的不透光部分；
步骤33’、以所述光阻层为遮蔽层，采用干法蚀刻工艺对所述彩膜基板进行处理，在干法蚀刻过程中，所述量子点膜的位于所述红色色阻层和绿色色阻层上的部分受到所述光阻层的覆盖保护从而在干法蚀刻过程不被蚀刻掉，而所述量子点膜的位于所述透明光阻层上的部分没有所述光阻层覆盖保护从而在干法蚀刻过程中被蚀刻掉，得到图案化的量子点层。
所述步骤1中，所述量子点树脂组合物中的红色量子点与绿色量子点为Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种，所述红色量子点与绿色量子点的粒径为1-10nm。
所述步骤1中，所述碱可溶性树脂由苯乙烯与马来酸酐共聚物组成、或由苯乙烯与芳香酸(甲基)丙烯酸半酯组成。
所述步骤1中，所述溶剂为甲酸、乙酸、氯仿、丙酮、丁酮、脂肪醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二乙二醇二乙醚乙酸乙酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、γ-丁内酯、丙酸-3-乙醚乙酯、丁基卡必醇、丁基卡必醇、醋酸酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环己烷、二甲苯和和异丙醇中的一种或多种组成。
所述步骤2中，在所述彩膜基板上涂布量子点树脂组合物的厚度为1μm-200μm。
所述步骤4中所得到的量子点显示面板中，所述上偏光片采用内置式，所述上偏光片设置于所述量子点彩膜基板面对所述TFT基板的一侧；所述上偏光片为染料系偏光片。
所述步骤4中所得到的量子点显示面板中，所述下偏光片采用内置式或外置式，所述下偏光片设置于所述TFT基板面对或远离所述量子点彩膜 基板的一侧；所述下偏光片的偏振方向与上偏光片的偏振方向垂直。
所述步骤4中所得到的量子点显示面板用于背光为蓝光的显示装置中。
本发明还提供一种量子点显示面板的制作方法，包括如下步骤：
步骤1、将经表面修饰的红色量子点、经表面修饰的绿色量子点、碱可溶性树脂、溶剂、分散剂、及添加剂按一定比例混合均匀，得到量子点树脂组合物；
步骤2、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
采用旋涂或狭缝式涂布的方式将所述量子点树脂组合物均匀地涂布在所述彩膜基板的彩色滤光层的一侧，随后，将涂有所述量子点树脂组合物的彩膜基板在100-150℃的温度下进行预烘烤，去除量子点树脂组合物中的有机溶剂，得到量子点膜；
步骤3、采用黄光制程、或结合干法蚀刻制程对所述量子点膜进行图案化处理，去除掉所述量子点膜上对应所述透明光阻层的部分，得到量子点层，进而完成量子点彩膜基板的制作；
步骤4、提供TFT基板，在所述量子点彩膜基板与TFT基板上分别设置上偏光片与下偏光片；并经过液晶成盒制程后得到量子点显示面板；
所述量子点显示面板包括量子点彩膜基板、与所述量子点彩膜基板相对设置的TFT基板、密封于所述量子点彩膜基板与TFT基板之间的液晶层、位于所述量子点彩膜基板一侧的上偏光片、及位于所述TFT基板一侧的下偏光片；
其中，所述步骤1中，所述量子点树脂组合物中的红色量子点与绿色量子点为Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种，所述红色量子点与绿色量子点的粒径为1-10nm；
其中，所述步骤1中，所述碱可溶性树脂由苯乙烯与马来酸酐共聚物组成、或由苯乙烯与芳香酸(甲基)丙烯酸半酯组成；
其中，所述步骤1中，所述溶剂为甲酸、乙酸、氯仿、丙酮、丁酮、脂肪醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二乙二醇二乙醚乙酸乙酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、γ-丁内酯、丙酸-3-乙醚乙酯、丁基卡必醇、丁基卡必醇、醋酸酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环己烷、二甲苯和和异丙醇中的一种或多种组成。
本发明的有益效果：本发明提供了一种量子点显示面板的制作方法， 借由彩色滤光片的现有的黄光制程、或结合干法蚀刻制程将含有表面修饰的红色、绿色量子点的树脂组合物制作得到具有较为精细图形结构的量子点层，与其他现有的量子点显示面板的制作方法相比，具有原料制备及制作工艺简单、图形解析度高、可大规模量产等优点，节约了成本与制程时间，且将量子点引入彩色滤光片结构中，可有效提升显示装置的色饱和度与色域，增强显示面板的色彩表现能力。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的量子点显示面板的制作方法的流程示意图；
图2为本发明的量子点显示面板的制作方法的步骤2的示意图；
图3A为本发明的量子点显示面板的制作方法的第一实施例的步骤3中利用光罩对透明光刻胶材料进行曝光的示意图；
图3B为本发明的量子点显示面板的制作方法的第一实施例的步骤3中对透明光刻胶材料进行显影的示意图；
图4A为本发明的量子点显示面板的制作方法的第二实施例的步骤3中得到图案化的光阻层的示意图；
图4B为本发明的量子点显示面板的制作方法的第二实施例的步骤3中以光阻层为遮蔽层对量子点膜进行干法蚀刻的示意图；
图5为本发明的量子点显示面板的制作方法制得的量子点显示面板用于显示装置中进行彩色显示的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种量子点显示面板的制作方法，包括如下步骤：
步骤1、将经表面修饰的红色量子点、经表面修饰的绿色量子点、碱可溶性树脂、溶剂、分散剂、及添加剂按一定比例混合均匀，得到量子点树脂组合物；
具体的，所述量子点树脂组合物中的红色量子点与绿色量子点为Ⅱ-Ⅵ族半导体材料(如CdS、CdSe、HgTe、ZnS、ZnSe、ZnTe、HgS)、Ⅲ-Ⅴ族 半导体材料(如InP、InAs、GaP、GaAs)、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种，所述红色量子点与绿色量子点的粒径为1-10nm。
具体的，所述碱可溶性树脂由苯乙烯与马来酸酐共聚物组成、或由苯乙烯与芳香酸(甲基)丙烯酸半酯组成。
具体的，所述溶剂为甲酸、乙酸、氯仿、丙酮、丁酮、脂肪醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二乙二醇二乙醚乙酸乙酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、γ-丁内酯、丙酸-3-乙醚乙酯、丁基卡必醇、丁基卡必醇、醋酸酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环己烷、二甲苯和和异丙醇中的一种或多种组成。
步骤2、如图2所示，提供彩膜基板，所述彩膜基板包括衬底基板11、位于所述衬底基板11上的黑色矩阵12、及彩色滤光层13，所述彩色滤光层13包括红色色阻层131、绿色色阻层132、及透明光阻层133；所述红色色阻层131包括数个红色子像素单元，所述绿色色阻层132包括数个绿色子像素单元，所述透明光阻层133包括数个透明子像素单元；
采用旋涂(spin)或狭缝式涂布(slit coating)的方式将所述量子点树脂组合物均匀地涂布在所述彩膜基板的彩色滤光层13的一侧，随后，将涂有所述量子点树脂组合物的彩膜基板在100-150℃的温度下进行预烘烤，去除量子点树脂组合物中的有机溶剂，得到量子点膜14’；具体的，所述步骤2中，在所述彩膜基板上涂布量子点树脂组合物的厚度为1μm-200μm。
步骤3、采用黄光制程、或结合干法蚀刻制程对所述量子点膜14’进行图案化处理，去除掉所述量子点膜14’上对应所述透明光阻层133的部分，得到量子点层14，进而完成量子点彩膜基板10的制作；
步骤4、提供TFT基板20，在所述量子点彩膜基板10与TFT基板20上分别设置上偏光片41与下偏光片42；并经过液晶成盒制程后得到量子点显示面板；
所述量子点显示面板包括量子点彩膜基板10、与所述量子点彩膜基板10相对设置的TFT基板20、密封于所述量子点彩膜基板10与TFT基板20之间的液晶层30、位于所述量子点彩膜基板10一侧的上偏光片41、及位于所述TFT基板20一侧的下偏光片42。
具体的，所述步骤4中所得到的量子点显示面板中，所述上偏光片41采用内置式，所述上偏光片41设置于所述量子点彩膜基板10面对所述TFT基板20的一侧；所述上偏光片为染料系偏光片。所述步骤4中所得到的量子点显示面板中，所述下偏光片42采用内置式或外置式，所述下偏光片设置于所述TFT基板20面对或远离所述量子点彩膜基板10的一侧；所述下 偏光片42的偏振方向与上偏光片41的偏振方向垂直。
具体的，如图5所示，所述步骤4中所得到的量子点显示面板用于背光为蓝光的显示装置中。背光模组2发出蓝光背光，在蓝色背光的激发下，混有红色与绿色量子点的量子点层14会发出半高宽很窄的红、绿混合光，该混合光随后经过红色色阻层131、绿色色阻层132后分别被滤成高纯度的红色与绿色单色光而分别显红色、绿色；而对应透明光阻层133位置由于没有量子点层覆盖而直接透过蓝色背光而显蓝色；最终提供了彩色显示所需的红、绿、蓝三原色，实现了彩色显示，并能够有效提高显示色域指数，且所述量子点层14内不包含蓝色量子点材料，将蓝光背光与透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。本发明的量子点显示面板的制作方法的第一实施例中，所述步骤3中采用黄光制程对所述量子点膜14’进行图案化处理，所述步骤3具体包括以下步骤：
步骤31、采用旋涂或狭缝式涂布的方式在所述经预烘烤后得到量子点膜14’上均匀地涂布一层透明光刻胶材料，如W光刻胶、PFA光刻胶等；
步骤32、如图3A-3B所示，提供光罩50，利用光罩50对所述透明光刻胶材料进行曝光、显影，所述光罩50包括对应所述红色色阻层131和绿色色阻层132的透光部分51、及对应所述透明光阻层133的不透光部分52；在曝光过程中，位于所述透光部分51下的透明光刻胶材料在光照下发生聚合反应而固化，位于所述不透光部分52下的透明光刻胶材料不发生聚合反应而未固化，在显影过程时，该固化的透明光刻胶材料不会被显影液洗掉，对应的位于其下的量子点膜14’的部分也会被保留下来，而未固化的光刻胶材料及对应的位于其下的量子点膜14’的部分会被显影液清洗掉；从而得到图案化的量子点层14及位于其上的光阻层15；
具体的，由于透明光刻胶材料中的光起始剂在紫外光的作用下促使聚合物单体发生聚合反应而使得透明光刻胶材料固化。
步骤33、在150-250℃的温度下对所述彩膜基板进行烘烤处理，以对所述量子点层14进行充分固化。
本发明的量子点显示面板的制作方法的第二实施例中，所述步骤3中采用黄光制程结合干法蚀刻制程对所述量子点膜14’进行图案化处理，所述步骤3具体包括以下步骤：
步骤31’、经步骤2的预烘烤后，再在200-250℃的温度下对所述彩膜基板进行烘烤处理，以使得所述量子点膜14’充分固化；
步骤32’、如图4A所示，采用旋涂或狭缝式涂布的方式在所述量子点膜14’上均匀地涂布一层透明光刻胶材料，如W光刻胶、PFA光刻胶等； 提供光罩50，利用光罩50对所述透明光刻胶材料进行曝光、显影，得到图案化的光阻层15；所述光罩50包括对应所述红色色阻层131和绿色色阻层132的透光部分51、及对应所述透明光阻层133的不透光部分52；
步骤33’、如图4B所示，以所述光阻层15为遮蔽层，采用干法蚀刻工艺对所述彩膜基板进行处理，在干法蚀刻过程中，所述量子点膜14’的位于所述红色色阻层131和绿色色阻层132上的部分受到所述光阻层15的覆盖保护从而在干法蚀刻过程不被蚀刻掉，而所述量子点膜14’的位于所述透明光阻层133上的部分没有所述光阻层15覆盖保护从而在干法蚀刻过程中被蚀刻掉，得到图案化的量子点层14。
综上所述，本发明提供了一种量子点显示面板的制作方法，借由彩色滤光片的现有的黄光制程、或结合干法蚀刻制程将含有表面修饰的红色、绿色量子点的树脂组合物制作得到具有较为精细图形结构的量子点层，与其他现有的量子点显示面板的制作方法相比，具有原料制备及制作工艺简单、图形解析度高、可大规模量产等优点，节约了成本与制程时间，且将量子点引入彩色滤光片结构中，可有效提升显示装置的色饱和度与色域，增强显示面板的色彩表现能力。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (17)

  1. 一种量子点显示面板的制作方法，包括如下步骤：
    步骤1、将经表面修饰的红色量子点、经表面修饰的绿色量子点、碱可溶性树脂、溶剂、分散剂、及添加剂按一定比例混合均匀，得到量子点树脂组合物；
    步骤2、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
    采用旋涂或狭缝式涂布的方式将所述量子点树脂组合物均匀地涂布在所述彩膜基板的彩色滤光层的一侧，随后，将涂有所述量子点树脂组合物的彩膜基板在100-150℃的温度下进行预烘烤，去除量子点树脂组合物中的有机溶剂，得到量子点膜；
    步骤3、采用黄光制程、或结合干法蚀刻制程对所述量子点膜进行图案化处理，去除掉所述量子点膜上对应所述透明光阻层的部分，得到量子点层，进而完成量子点彩膜基板的制作；
    步骤4、提供TFT基板，在所述量子点彩膜基板与TFT基板上分别设置上偏光片与下偏光片；并经过液晶成盒制程后得到量子点显示面板；
    所述量子点显示面板包括量子点彩膜基板、与所述量子点彩膜基板相对设置的TFT基板、密封于所述量子点彩膜基板与TFT基板之间的液晶层、位于所述量子点彩膜基板一侧的上偏光片、及位于所述TFT基板一侧的下偏光片。
  2. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤3中采用黄光制程对所述量子点膜进行图案化处理，所述步骤3具体包括以下步骤：
    步骤31、采用旋涂或狭缝式涂布的方式在所述经预烘烤后得到量子点膜上均匀地涂布一层透明光刻胶材料；
    步骤32、提供光罩，利用光罩对所述透明光刻胶材料进行曝光、显影，所述光罩包括对应所述红色色阻层和绿色色阻层的透光部分、及对应所述透明光阻层的不透光部分；在曝光过程中，位于所述透光部分下的透明光刻胶材料在光照下发生聚合反应而固化，位于所述不透光部分下的透明光刻胶材料不发生聚合反应而未固化，在显影过程时，该固化的透明光刻胶材料不会被显影液洗掉，对应的位于其下的量子点膜的部分也会被保留下 来，而未固化的光刻胶材料及对应的位于其下的量子点膜的部分会被显影液清洗掉；从而得到图案化的量子点层及位于其上的光阻层；
    步骤33、在150-250℃的温度下对所述彩膜基板进行烘烤处理，以对所述量子点层进行充分固化。
  3. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤3中采用黄光制程结合干法蚀刻制程对所述量子点膜进行图案化处理，所述步骤3具体包括以下步骤：
    步骤31’、经步骤2的预烘烤后，再在200-250℃的温度下对所述彩膜基板进行烘烤处理，以使得所述量子点膜充分固化；
    步骤32’、采用旋涂或狭缝式涂布的方式在所述量子点膜上均匀地涂布一层透明光刻胶材料；提供光罩，利用光罩对所述透明光刻胶材料进行曝光、显影，得到图案化的光阻层；所述光罩包括对应所述红色色阻层和绿色色阻层的透光部分、及对应所述透明光阻层的不透光部分；
    步骤33’、以所述光阻层为遮蔽层，采用干法蚀刻工艺对所述彩膜基板进行处理，在干法蚀刻过程中，所述量子点膜的位于所述红色色阻层和绿色色阻层上的部分受到所述光阻层的覆盖保护从而在干法蚀刻过程不被蚀刻掉，而所述量子点膜的位于所述透明光阻层上的部分没有所述光阻层覆盖保护从而在干法蚀刻过程中被蚀刻掉，得到图案化的量子点层。
  4. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤1中，所述量子点树脂组合物中的红色量子点与绿色量子点为Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种，所述红色量子点与绿色量子点的粒径为1-10nm。
  5. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤1中，所述碱可溶性树脂由苯乙烯与马来酸酐共聚物组成、或由苯乙烯与芳香酸(甲基)丙烯酸半酯组成。
  6. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤1中，所述溶剂为甲酸、乙酸、氯仿、丙酮、丁酮、脂肪醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二乙二醇二乙醚乙酸乙酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、γ-丁内酯、丙酸-3-乙醚乙酯、丁基卡必醇、丁基卡必醇、醋酸酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环己烷、二甲苯和和异丙醇中的一种或多种组成。
  7. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤2中，在所述彩膜基板上涂布量子点树脂组合物的厚度为1μm-200μm。
  8. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤 4中所得到的量子点显示面板中，所述上偏光片采用内置式，所述上偏光片设置于所述量子点彩膜基板面对所述TFT基板的一侧；所述上偏光片为染料系偏光片。
  9. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤4中所得到的量子点显示面板中，所述下偏光片采用内置式或外置式，所述下偏光片设置于所述TFT基板面对或远离所述量子点彩膜基板的一侧；所述下偏光片的偏振方向与上偏光片的偏振方向垂直。
  10. 如权利要求1所述的量子点显示面板的制作方法，其中，所述步骤4中所得到的量子点显示面板用于背光为蓝光的显示装置中。
  11. 一种量子点显示面板的制作方法，包括如下步骤：
    步骤1、将经表面修饰的红色量子点、经表面修饰的绿色量子点、碱可溶性树脂、溶剂、分散剂、及添加剂按一定比例混合均匀，得到量子点树脂组合物；
    步骤2、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
    采用旋涂或狭缝式涂布的方式将所述量子点树脂组合物均匀地涂布在所述彩膜基板的彩色滤光层的一侧，随后，将涂有所述量子点树脂组合物的彩膜基板在100-150℃的温度下进行预烘烤，去除量子点树脂组合物中的有机溶剂，得到量子点膜；
    步骤3、采用黄光制程、或结合干法蚀刻制程对所述量子点膜进行图案化处理，去除掉所述量子点膜上对应所述透明光阻层的部分，得到量子点层，进而完成量子点彩膜基板的制作；
    步骤4、提供TFT基板，在所述量子点彩膜基板与TFT基板上分别设置上偏光片与下偏光片；并经过液晶成盒制程后得到量子点显示面板；
    所述量子点显示面板包括量子点彩膜基板、与所述量子点彩膜基板相对设置的TFT基板、密封于所述量子点彩膜基板与TFT基板之间的液晶层、位于所述量子点彩膜基板一侧的上偏光片、及位于所述TFT基板一侧的下偏光片；
    其中，所述步骤1中，所述量子点树脂组合物中的红色量子点与绿色量子点为Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、Ⅳ-Ⅵ族纳米半导体材料中的一种或多种，所述红色量子点与绿色量子点的粒径为1-10nm；
    其中，所述步骤1中，所述碱可溶性树脂由苯乙烯与马来酸酐共聚物组成、或由苯乙烯与芳香酸(甲基)丙烯酸半酯组成；
    其中，所述步骤1中，所述溶剂为甲酸、乙酸、氯仿、丙酮、丁酮、脂肪醇、乙二醇单甲醚、乙二醇单乙醚、乙二醇单丙醚、乙二醇单丁醚、二乙二醇二乙醚乙酸乙酯、甲乙酮、甲基异丁基酮、单甲基醚乙二醇酯、γ-丁内酯、丙酸-3-乙醚乙酯、丁基卡必醇、丁基卡必醇、醋酸酯、丙二醇单甲基醚、丙二醇单甲基醚醋酸酯、环己烷、二甲苯和和异丙醇中的一种或多种组成。
  12. 如权利要求11所述的量子点显示面板的制作方法，其中，所述步骤3中采用黄光制程对所述量子点膜进行图案化处理，所述步骤3具体包括以下步骤：
    步骤31、采用旋涂或狭缝式涂布的方式在所述经预烘烤后得到量子点膜上均匀地涂布一层透明光刻胶材料；
    步骤32、提供光罩，利用光罩对所述透明光刻胶材料进行曝光、显影，所述光罩包括对应所述红色色阻层和绿色色阻层的透光部分、及对应所述透明光阻层的不透光部分；在曝光过程中，位于所述透光部分下的透明光刻胶材料在光照下发生聚合反应而固化，位于所述不透光部分下的透明光刻胶材料不发生聚合反应而未固化，在显影过程时，该固化的透明光刻胶材料不会被显影液洗掉，对应的位于其下的量子点膜的部分也会被保留下来，而未固化的光刻胶材料及对应的位于其下的量子点膜的部分会被显影液清洗掉；从而得到图案化的量子点层及位于其上的光阻层；
    步骤33、在150-250℃的温度下对所述彩膜基板进行烘烤处理，以对所述量子点层进行充分固化。
  13. 如权利要求11所述的量子点显示面板的制作方法，其中，所述步骤3中采用黄光制程结合干法蚀刻制程对所述量子点膜进行图案化处理，所述步骤3具体包括以下步骤：
    步骤31’、经步骤2的预烘烤后，再在200-250℃的温度下对所述彩膜基板进行烘烤处理，以使得所述量子点膜充分固化；
    步骤32’、采用旋涂或狭缝式涂布的方式在所述量子点膜上均匀地涂布一层透明光刻胶材料；提供光罩，利用光罩对所述透明光刻胶材料进行曝光、显影，得到图案化的光阻层；所述光罩包括对应所述红色色阻层和绿色色阻层的透光部分、及对应所述透明光阻层的不透光部分；
    步骤33’、以所述光阻层为遮蔽层，采用干法蚀刻工艺对所述彩膜基板进行处理，在干法蚀刻过程中，所述量子点膜的位于所述红色色阻层和绿色色阻层上的部分受到所述光阻层的覆盖保护从而在干法蚀刻过程不被蚀刻掉，而所述量子点膜的位于所述透明光阻层上的部分没有所述光阻层覆 盖保护从而在干法蚀刻过程中被蚀刻掉，得到图案化的量子点层。
  14. 如权利要求11所述的量子点显示面板的制作方法，其中，所述步骤2中，在所述彩膜基板上涂布量子点树脂组合物的厚度为1μm-200μm。
  15. 如权利要求11所述的量子点显示面板的制作方法，其中，所述步骤4中所得到的量子点显示面板中，所述上偏光片采用内置式，所述上偏光片设置于所述量子点彩膜基板面对所述TFT基板的一侧；所述上偏光片为染料系偏光片。
  16. 如权利要求11所述的量子点显示面板的制作方法，其中，所述步骤4中所得到的量子点显示面板中，所述下偏光片采用内置式或外置式，所述下偏光片设置于所述TFT基板面对或远离所述量子点彩膜基板的一侧；所述下偏光片的偏振方向与上偏光片的偏振方向垂直。
  17. 如权利要求11所述的量子点显示面板的制作方法，其中，所述步骤4中所得到的量子点显示面板用于背光为蓝光的显示装置中。
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