WO2017036352A1

WO2017036352A1 - Half turning-over dual-axis magnetoresistive sensor

Info

Publication number: WO2017036352A1
Application number: PCT/CN2016/096830
Authority: WO
Inventors: 迪克詹姆斯·G; 周志敏
Original assignee: 江苏多维科技有限公司
Priority date: 2015-08-28
Filing date: 2016-08-26
Publication date: 2017-03-09
Also published as: CN105044631A; CN105044631B

Abstract

A half turning-over dual-axis magnetoresistive sensor (1, 5), comprising at least one set of slices (2, 2(1), 6, 6(1), 20, 20(1), 60, 60(1), 91, 92) arranged in an X-Y plane. Each set of slices comprises two slices, wherein the two slices are arranged in a 180-degree out-of-phase relationship in the X-Y plane. Each slice comprises two sets of magnetoresistive sensing unit strings (3, 4, 7, 8) having orthogonal magnetization directions of a ferromagnetic reference layer (13). Each of the magnetoresistive sensing unit strings (3, 4, 7, 8) is comprised of at least two magnetoresistive sensing units (31, 32, 41, 42, 71, 72, 81, 82, 21-24, 61-64). Also, the magnetoresistive sensing unit strings (3, 4, 7, 8) on the two slices are in electrical connection so as to form at least two single-axis push-pull type magnetoresistive sensing unit bridges having orthogonal magnetic field sensitive directions. Each of the push-pull type magnetoresistive sensing unit bridges comprises magnetoresistive sensing unit strings (3, 4, 7, 8) having opposite magnetization directions of the ferromagnetic reference layer (13) respectively arranged on two slices. The dual-axis magnetoresistive sensing unit bridges can be either linear magnetoresistive sensors or angular magnetoresistive sensors. The sensor of the present invention has the advantages of small number of slices, easy mounting position, simple structure and low power consumption.

Description

Half flip two-axis magnetoresistive sensor

Technical field

The present invention relates to the field of magnetic sensors, and in particular to a semi-inverted two-axis magnetoresistive sensor.

Background technique

A two-axis magnetoresistive sensor such as a two-axis linear sensor or a two-axis angular sensor for measuring external magnetic field information in two orthogonal directions, such as X and Y directions, wherein the two-axis linear sensor is used to measure the external magnetic field in the X and Y directions. The magnetic field strength, while the two-axis angle sensor is used to measure the external magnetic field and the angular information in the X and Y directions, and is widely used in the field of magnetic sensor design.

The two-axis magnetoresistive sensor includes two single-axis magnetoresistive sensors, each of which uses a push-pull bridge structure to enhance the signal output of the magnetoresistive sensor, and the push-pull bridge includes a magneto-resistance sensor. The unit and the magnetizing resistance sensing unit are composed and have opposite magnetic field sensitive directions, respectively.

For a TMR or GMR type two-axis magnetoresistive sensor, a magnetoresistive sensing unit having a single magnetic field sensitive direction such as an X-axis is usually sliced and flipped by 90, 180 and 270 degrees, respectively, to obtain a Y-axis magnetization. The resistance sensing unit is sliced, the magnetoresistive resistance sensing unit is sliced, and the X-axis push magnetoresistive sensor unit slice and the magnetoresistive resistance sensing unit are sliced. Therefore, the two-axis magnetoresistive sensor adopts the method of flipping the slice to require at least 4 pieces. The advantage of the slicing is that the preparation method is simple, only one slice is needed, and corresponds to a ferromagnetic reference layer structure, and the disadvantage is that four slices need to be operated in the same plane for precise positioning, which increases the sensor due to the operation error. The possibility of measuring the loss of accuracy.

On the other hand, by scanning the antiferromagnetic layer of the magnetoresistive sensing unit by laser magnetic field annealing, and changing the direction of the magnetic field, four orthogonal magnetic resistance sensing units on a single slice can be orthogonalized. The fabrication of the oriented magnetoresistive sensing unit, however, has the disadvantage that the process time consumption of the single magnetoresistive sensing unit is very long by the method of laser scanning heating.

The design of a ferromagnetic reference layer using a multilayer film structure by changing the number of layers of a multilayer film composed of a ferromagnetic layer and a metal spacer layer that are alternately coupled with the antiferromagnetic layer, one of which is an odd layer and the other For the even-numbered layer method, the fabrication of the magnetoresistive sensing unit and the magnetizing resistance sensing unit of the opposite ferromagnetic reference layer can be realized. For the orientation of the orthogonal ferromagnetic reference layer, two different antiferromagnetic layers can be used. AF1 and AF2 are achieved by two magnetic field thermal annealings, which have the disadvantage that the complexity of the micromachining process is increased due to the need to introduce at least four multilayer film structures and two magnetic field annealings during deposition of the multilayer film.

Summary of the invention

In view of the respective advantages and disadvantages of the above single chip method and flip chip method, the present invention proposes a half flip two-axis magnetoresistive sensor by preparing two orthogonal magnetoresistive sensing units on the same slice while utilizing The slice is flipped 180 degrees to obtain the magnetoresistive sensing unit corresponding to the push arm and the arm. The advantage is that the pusher arm and the arm are not required to be referenced in order of the multilayer film structure, and only two annealings are required to achieve orthogonality. The ferromagnetic reference layer is oriented, and the number of flipped slices is only two, which simplifies the manufacturing process and the slice position alignment process, and improves the manufacturing efficiency of the two-axis magnetoresistive sensor.

A semi-inverted two-axis magnetoresistive sensor according to the present invention comprises at least one set of slices in an X-Y plane;

Each set of slices includes two slices, one of which is obtained by rotating the other slice in an angular range of 180 degrees in the XY plane, and any of the slices includes two sets of magnetoresistive sensing element strings having a magnetization direction of the orthogonal ferromagnetic reference layer. The magnetoresistive sensing unit strings are each formed by at least two magnetoresistive sensing units; and the magnetoresistive sensing unit strings on the two slices are electrically connected to have at least two orthogonal magnetic field sensitive directions A push-pull magnetoresistive sensing unit bridge, each of the push-pull magnetoresistive sensing unit bridges comprises a magnetoresistive sensing unit string having opposite magnetostrictive reference layer magnetization directions respectively on two slices.

Preferably, the magnetoresistive sensing unit is a GMR or TMR magnetoresistive sensing unit.

Preferably, the push-pull magnetoresistive sensing unit bridge is a linear magnetoresistive sensing unit bridge or an angular magnetoresistive sensing unit bridge.

Preferably, the push-pull magnetoresistive sensing unit bridge is a half bridge, a full bridge or a quasi-bridge structure.

Preferably, the linear magnetoresistive sensing unit bridge is biased by a permanent magnet when no external magnetic field is applied. Double exchange action, shape anisotropy or any combination thereof allows the magnetization direction of the ferromagnetic free layer to be perpendicular to the magnetization direction of the ferromagnetic pinned layer.

Preferably, the ferromagnetic reference layer structure of the magnetoresistive sensing unit bridge adopts a single stacked layer structure or a multilayer film structure;

The single stacked layer structure includes an antiferromagnetic layer and a ferromagnetic reference layer disposed in sequence;

The multilayer film structure includes an antiferromagnetic layer, a ferromagnetic layer, a metal spacer layer, a ferromagnetic reference layer, a non-metal spacer layer, a ferromagnetic free layer, or the multilayer thin film structure disposed in the intermediate layer. The antiferromagnetic layer, the ferromagnetic layer, the metal spacer layer, the ferromagnetic layer, the metal spacer layer, the ferromagnetic reference layer, the non-metal spacer layer, and the ferromagnetic free layer are sequentially disposed on the bottom layer.

Preferably, the ferromagnetic reference layers of the two sets of the two sets of magnetoresistive sensing unit strings on the same slice correspond to the antiferromagnetic layer 1 and the antiferromagnetic layer 2, respectively, for use in the antiferromagnetic layer 1 and annealing at a blocking temperature of the antiferromagnetic layer 2, respectively, and applying two external magnetic fields in an orthogonal direction during cooling to form the two sets of magnetoresistors having a magnetization direction of the orthogonal ferromagnetic reference layer Sensing unit string.

Preferably, the semi-inverted two-axis magnetoresistive sensor further comprises an ASIC-specific integrated circuit, and the ASIC and the push-pull magnetoresistive sensing unit bridge are electrically connected.

Preferably, the ASIC-specific integrated circuit includes an ESD anti-static protection circuit.

Preferably, the ASIC-specific integrated circuit includes an ESD anti-static protection circuit and a processing circuit for calculating an output of the push-pull magnetoresistive sensing unit bridge such that it is output in digital form.

Preferably, the input and output ends of the push-pull magnetoresistive sensing unit bridge are connected by leads to pins on the same lead frame.

Preferably, the lead frame and the push-pull magnetoresistive bridge are sealed in a plastic to form a standard semiconductor package.

Preferably, the two slices are connected by a bonding connection or by a TSV welding head.

DRAWINGS

Figure 1 is a half-turn two-axis magnetoresistive sensor structure 1;

Figure 2 is a structure of a two-turn two-axis magnetoresistive sensor;

Figure 3 (a), 3 (b) is a push-pull full-bridge structure diagram of a half-turn two-axis magnetoresistive sensor;

Figure 4 is a structural view of a multilayer film of a TMR or GMR magnetoresistive sensing unit;

5(a) and 5(b) are magnetic intensity distribution diagrams of a linear magnetoresistive sensing unit;

6(a) and 6(b) are diagrams showing the magnetization distribution of the angular magnetoresistive sensing unit;

7 is an electrical connection diagram between slices of a structure of a half-turn two-axis magnetoresistive sensor;

8 is an electrical connection diagram between slices of a structure structure of a half-turn two-axis magnetoresistive sensor;

9 is an electrical connection diagram between slices of a half-turn two-axis magnetoresistive sensor including an ASIC;

Figure 10 is a diagram of a TMR or GMR ferromagnetic reference layer structure;

Figure 11 is a second diagram of the TMR or GMR ferromagnetic reference layer structure;

12(a) and 12(b) are structural diagrams of a ferromagnetic reference layer of a half-turn two-axis magnetoresistive sensor X-axis magnetoresistive sensing unit and a Y-axis magnetoresistive sensing unit;

Figure 13 is a diagram of a laser heat assisted magnetic field annealing device;

Figure 14 is a diagram showing the distribution of a two-axis single slice of a half-turn two-axis magnetoresistive sensor on a wafer.

detailed description

The invention will be described in detail below with reference to the drawings in conjunction with the embodiments.

Embodiment 1

1 and 2 are two structural views of a half-turned two-axis magnetoresistive sensor according to the present invention. The half-turned two-axis magnetoresistive sensors 1 and 5 each include two slices in the XY plane, wherein the two axes are inverted. The magnetoresistive sensor 1 comprises slices 2 and 2(1), and the half-turned two-axis magnetoresistive sensor 5 comprises slices 6 and 6(1), and one of the slices is obtained by rotating the other slice in a phase of 180 degrees in the XY plane, ie Slices 2 and 2 (1), slices 6 and 6 (1) can be obtained by various rotations of 180 degrees; on the other hand, in FIGS. 1 and 2, two slices forming a half-turn two-axis magnetoresistive sensor are included. Any of the slices includes two uniaxial magnetoresistive sensors orthogonal to each other, for example, slices 2 and 2 (1) each include an X-axis magnetoresistive sensing cell string 3 and a Y-axis magnetoresistive sensor cell string 4, a slice 6 and 6(1) includes an X-axis magnetoresistive sensing unit string 7 and a Y-axis magnetoresistive sensing unit string 8, wherein in FIG. 1, the X-magnetoresistive sensing unit string 3 and the Y-axis magnetoresistive sensing unit string 4 are adjacent to each other. Arranged, one of the magnetoresistive sensing unit strings is located on one side of the other magnetoresistive sensing unit string. In Fig. 2, the X-axis magnetoresistive sensing unit string 7 and the Y-axis magnetoresistive sensing unit string are alternately arranged, wherein the X-axis magnetoresistance The

subunits

71 and 72 included in the sensing unit string 7 and the

subunits

81 and 82 included in the Y-axis magnetoresistive sensing unit string 8 alternate with each other; in FIGS. 1 and 2, two slices 2 and 2 (1) The X-axis magnetoresistive sensing unit strings on the slices 6 and 6(1) are electrically connected to form a push-pull X-axis magnetoresistive sensing unit bridge as shown in Fig. 3(a), and the Y-axis magnetoresistance is transmitted. The sensing unit string is electrically connected to a push-pull Y-axis magnetoresistive sensing unit bridge as shown in Fig. 3(b), wherein the X-axis magnetoresistive sensing unit on one slice and the X-axis magnetoresistance on the other slice The sensing units are electrically connected to each other to form a push arm magnetoresistive sensing unit, and the Y magnetoresistive sensing unit on one slice and the Y-axis magnetoresistive sensing unit on the other slice are electrically connected to each other to form a magnet of the arm magnet resistance. The sensing unit, Figure 3 is a push-pull full-bridge structure, which can actually be a push-pull half-bridge or quasi-bridge structure.

The X-axis magnetoresistive sensor and the Y-axis magnetoresistive sensor included in the half-turn two-axis magnetoresistive sensor may be the same as the linear magnetoresistive sensor or the same as the angular magnetoresistive sensor, and the magnetoresistive sensing unit is of the GMR or TMR type. The structure of the magnetoresistive sensing unit is as shown in FIG. 4. The multilayer film structure 9 includes an antiferromagnetic layer 12, a ferromagnetic reference layer 13, a non-magnetic isolating layer 14, and a ferromagnetic free layer 15 in order from top to bottom. In order to correspond to the multilayer thin film structure of the angular magnetoresistive sensor, the magnetization direction 16 of the ferromagnetic reference layer 13 is the magnetic field sensitive direction of the angle sensor, and the magnetization direction 17 of the ferromagnetic free layer 15 can be freely rotated along the direction of the external magnetic field. 11 is a multilayer film structure corresponding to the linear magnetoresistive sensing unit. When the magnetic field is 0, the magnetization direction 18 of the ferromagnetic reference layer 13 and the magnetization direction 19 of the ferromagnetic free layer 15 are perpendicular to each other. Placement, double exchange action, shape anisotropy or any combination thereof to make the magnetization direction of the ferromagnetic free layer perpendicular to the magnetization direction of the ferromagnetic reference layer.

5 and FIG. 6 respectively show the shapes of the linear magnetoresistive sensing unit and the angular magnetoresistive sensing unit, wherein the linear magnetoresistive sensing unit has an elliptical shape, and the ferromagnetic reference layer magnetization direction is an elliptical short-axis direction, and The magnetization direction of the free layer is along the long axis direction, 5(a) and 5(b) are the X-axis magnetic resistance sensing unit and the Y-axis linear resistance sensing unit, respectively, and the angular magnetic resistance sensing unit is usually circular The reference layer magnetization direction is the magnetic field sensitive direction, and Figures 6(a) and 6(b) are the X-axis angle magnetoresistance sensing unit and the Y-axis angle magnetoresistance sensing unit, respectively.

Embodiment 2

The electrical connection of the semi-inverted two-axis magnetoresistive sensor is described below by taking an angular magnetoresistive sensing unit as an example. FIG. 7 is an arrangement of the X-axis magnetoresistive sensing unit and the Y-axis magnetoresistive sensing unit shown in FIG. The electrical connection diagram of the two slices, wherein 21 and 23 are respectively the bridge arms corresponding to the bridge of the Y-axis magnetoresistive sensing unit, and 22 and 24 are the two push arms respectively corresponding to the bridge of the X-axis magnetoresistive sensing unit Where 20(1) is a relative rotation of 20 degrees of 180 degrees, thereby obtaining a bridge arm of the X-axis magnetoresistive sensing unit bridge and the Y-axis magnetoresistive sensing unit bridge in 20(1), two slices of Connected by leads 25, 26 of which are pins, and the output input pins of the corresponding two-axis magnetoresistive sensor include Vbias, GND, Vax+, Vax-, Vby+, Vby-.

8 is an electrical connection diagram between two slices corresponding to the X-axis magnetoresistive sensing unit and the Y-axis magnetoresistive sensing unit of FIG. 1, wherein 61 and 62 correspond to the Y-axis magnetoresistive sensing unit bridge. Two push arms, 63 and 64 are two push arms corresponding to the bridge of the X-axis magnetoresistive sensing unit, and slices 60 and 61 are corresponding two slices that are rotated by 180 degrees from each other, and the two slices pass between The lead 65 is connected, 66 is a pin, and the output input pins corresponding to the two-axis magnetoresistive sensor include Vbias, GND, Vax+, Vax-, Vby+, Vby-.

9 is a two-axis magnetoresistive sensor including an ASIC integrated circuit chip, wherein 91 and 92 are slices including an X-axis magnetoresistive sensing unit and a Y-axis magnetoresistive sensing unit rotated by 180 degrees, and 93 is an ASIC integrated circuit. The chip, the two

slices

91 and 92 are respectively connected by a lead 94 and an ASIC integrated circuit 93, and the ASIC-specific integrated circuit 93 includes an ESD anti-static protection circuit and a processing circuit for calculating the output of the push-pull magnetoresistive bridge. It is output in digital form, and ASIC integrated circuit 93 is connected to Vbias, GND, Vx, and Vy corresponding to power, ground, X-axis output signals, and Y-axis output signals.

10-12 are structural diagrams of a multilayer thin film having different ferromagnetic reference layers corresponding to a two-axis magnetoresistive sensing unit, wherein in FIG. 10, the ferromagnetic reference layer structure adopts an antiferromagnetic layer AF/ferromagnetic layer FM single. Stacked layer structure, in Figure 11, the ferromagnetic reference layer structure uses an antiferromagnetic layer AF / ferromagnetic layer FM / metal barrier / ferromagnetic layer FM multilayer film structure, Figure 12 (a) and 12 (b) respectively The ferromagnetic reference layer structure of the magnetoresistive sensing unit corresponding to the X-axis magnetoresistive sensor and the Y-axis magnetoresistive sensor, wherein the magnetization directions of the antiferromagnetic layer AF1 and the antiferromagnetic layer AF2 are perpendicular to each other.

Figure 13 is an X-axis magnetoresistive sensing unit on a single slice of a half-turn two-axis magnetoresistive sensor and A laser heating auxiliary annealing device of a magnetic multilayer film structure of different ferromagnetic reference layers oriented by a Y-axis magnetoresistive sensing unit, comprising a laser source 100 for emitting a laser beam 105 aligned with the magnetic film 103, an optical attenuator 107 Provided at the rear end of the laser beam 105 emitted from the laser source 100, the mirror 106 is used to change the direction of propagation of the laser beam 105 attenuated via the optical attenuator 107, and the focusing objective 101 is used to be changed via the mirror 106. The direction of the laser beam 105 is focused into a spot, and the movable stage 102 is provided with a jig for holding the magnetic film 103, and two

electromagnets

108 and 109 in two orthogonal directions. In addition, a CCD camera 99 is also included. The mirror 106 has a slit. The CCD camera 99 passes through the slit of the mirror 106 to adjust the mirror 106 to align the spot with the magnetic film 103, wherein 104 is the light entering the CCD camera 99.

Through the laser-assisted thermal annealing device shown in FIG. 13, the laser spot directly selects the magnetic multilayer film of the X-axis magnetoresistive sensing unit and the Y-axis magnetoresistive sensing unit by the movement of the moving platform 102, and performs rapid heating. Above the blocking temperature of the antiferromagnetic layer, and then during the cooling process, the

bidirectional electromagnets

108 and 109 are activated to directly determine the magnetization direction of each magnetoresistive sensing unit, so that the X-axis magnetic on a single slice can be directly obtained. Resistance transfer unit and Y-axis magnetoresistive sensing unit. Therefore, the magnetic multilayer film deposited on a single chip has the same deposition order by means of a laser-assisted thermal annealing device.

14 is a distribution diagram of two different orientation X and Y-axis magnetoresistive sensing units on a single slice of a half-turned two-axis magnetoresistive sensor on a wafer 200, in order to ensure uniformity of distribution differences on the wafer. The multilayer thin film units of various reference ferromagnetic layer directions need to be distributed in different regions, wherein 201 is represented as a Y-axis oriented antiferromagnetic layer, and 202 is an X-axis oriented antiferromagnetic layer, distributed in Different regions on the wafer 200, by depositing different sequences of different ferromagnetic layers and metal layers on the antiferromagnetic layer, thereby determining orthogonal X-axis and Y-axis orientations, also in different regions, tunnels The patterning of the junction cells needs to be performed uniformly after all of the deposited multilayer film sequences and orientations have been completed.

In addition to laser-assisted thermal annealing, it is possible to have two different antiferromagnetic layers AF1 and AF2 on the same wafer, and two different magnetic field annealing temperatures and orthogonal annealing for AF1 and AF2. In the direction of the magnetic field, assuming that one of the barrier temperatures of AF1 and AF2 is Tb1 and Tb2, where Tb1>Tb2, the magnetic field is annealed and the magnetic field is annealed to obtain X magnetic. The field direction is then subjected to magnetic field annealing of Tb2 to obtain Y magnetic field annealing, thereby obtaining an X-axis magnetoresistive sensor unit and a Y-axis magnetoresistive sensing unit on the same slice.

The above description is only the preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes can be made to the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.

Claims

A half-turn two-axis magnetoresistive sensor characterized by comprising at least one set of slices in an X-Y plane;

Each set of slices includes two slices, one of which is obtained by rotating the other slice in an angular range of 180 degrees in the XY plane, and any of the slices includes two sets of magnetoresistive sensing element strings having a magnetization direction of the orthogonal ferromagnetic reference layer. The magnetoresistive sensing unit strings are each formed by at least two magnetoresistive sensing units; and the magnetoresistive sensing unit strings on the two slices are electrically connected to have at least two orthogonal magnetic field sensitive directions A push-pull magnetoresistive sensing unit bridge, each of the push-pull magnetoresistive sensing unit bridges comprises a magnetoresistive sensing unit string having opposite magnetostrictive reference layer magnetization directions respectively on two slices.
A transflective two-axis magnetoresistive sensor according to claim 1, wherein said magnetoresistive sensing unit is a GMR or TMR magnetoresistive sensing unit.
The semi-inverted two-axis magnetoresistive sensor according to claim 1, wherein the push-pull magnetoresistive sensing unit bridge is a linear magnetoresistive sensing unit bridge or an angular magnetoresistive sensing unit. bridge.
The semi-inverted two-axis magnetoresistive sensor according to claim 1, wherein the push-pull magnetoresistive sensing unit bridge is a half bridge, a full bridge or a quasi-bridge structure.
A semi-inverted two-axis magnetoresistive sensor according to claim 3, wherein said linear magnetoresistive sensing unit bridge passes permanent magnet bias, double exchange action, shape anisotropy when no external magnetic field is applied Or any combination thereof to make the magnetization direction of the ferromagnetic free layer perpendicular to the magnetization direction of the ferromagnetic pinned layer.
The semi-inverted two-axis magnetoresistive sensor according to claim 3, wherein the ferromagnetic reference layer structure of the magnetoresistive sensing unit bridge adopts a single stacked layer structure or a multilayer film structure;

The single stacked layer structure includes an antiferromagnetic layer and a ferromagnetic reference layer disposed in sequence;

The multilayer film structure includes an antiferromagnetic layer, a ferromagnetic layer, a metal spacer layer, a ferromagnetic reference layer, a non-metal spacer layer, a ferromagnetic free layer, or the multilayer thin film structure disposed in the intermediate layer. The antiferromagnetic layer, the ferromagnetic layer, the metal spacer layer, the ferromagnetic layer, the metal spacer layer, the ferromagnetic reference layer, the non-metal spacer layer, and the ferromagnetic free layer are sequentially disposed on the bottom layer.
The semi-inverted two-axis magnetoresistive sensor according to claim 6, wherein the ferromagnetic reference layers of the two sets of the two sets of magnetoresistive sensing unit strings on the same slice respectively correspond to anti-iron The magnetic layer 1 and the antiferromagnetic layer 2 are respectively annealed at a blocking temperature of the antiferromagnetic layer 1 and the antiferromagnetic layer 2, and two external magnetic fields in an orthogonal direction are respectively applied during cooling to form The two sets of magnetoresistive sensing unit strings of the orthogonal ferromagnetic reference layer magnetization direction.
A semi-inverted two-axis magnetoresistive sensor according to claim 1, further comprising an ASIC-dedicated integrated circuit, said ASIC and said push-pull magnetoresistive sensing unit bridge being electrically connected.
A half flip two-axis magnetoresistive sensor according to claim 8, wherein said ASIC-specific integrated circuit comprises an ESD anti-static protection circuit.
A semi-inverted two-axis magnetoresistive sensor according to claim 8, wherein said ASIC-dedicated integrated circuit comprises an ESD anti-static protection circuit and a bridge for said push-pull magnetoresistive sensing unit The processing circuit that performs the calculation is output such that it is output in digital form.
A semi-inverted two-axis magnetoresistive sensor according to claim 10, wherein the input and output terminals of said push-pull magnetoresistive sensing unit bridge are connected by leads to pins on the same lead frame on.
A half flip two-axis magnetoresistive sensor according to claim 11 wherein said lead frame and said push-pull magnetoresistive bridge are sealed in a plastic to form a standard semiconductor package.
A semi-inverted two-axis magnetoresistive sensor according to claim 1, wherein the two slices are connected by a bonding connection or by a TSV horn.