WO2017031821A1 - Ceramic ring capable of changing shape and appearance of surface thin film of wafer - Google Patents
Ceramic ring capable of changing shape and appearance of surface thin film of wafer Download PDFInfo
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- WO2017031821A1 WO2017031821A1 PCT/CN2015/092365 CN2015092365W WO2017031821A1 WO 2017031821 A1 WO2017031821 A1 WO 2017031821A1 CN 2015092365 W CN2015092365 W CN 2015092365W WO 2017031821 A1 WO2017031821 A1 WO 2017031821A1
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- wafer
- ceramic ring
- edge
- thin film
- plasma
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- 239000000919 ceramic Substances 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000012876 topography Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 5
- 230000003116 impacting effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Definitions
- the present invention relates to a wafer-bearing ceramic ring for a semiconductor coating device, which is mainly used in a normal temperature or high temperature process in a reaction chamber of a semiconductor coating device, and belongs to the technical field of application of semiconductor thin film deposition. Background technique
- the circular groove of the ceramic ring used for wafer bearing is fixed in size, and during the process, since the gas transportation direction is transported from the center of the stage to the periphery, the pumping is carried out from the periphery of the stage.
- the gas ceramic ring is pumped away.
- the stepped portion of the supporting wafer is higher than the wafer, which affects the flow of the airflow at the edge of the wafer, which easily causes a change in the gas distribution here, thereby causing a change in the plasma distribution.
- the influence of the thickness of the deposited film on the surface of the wafer is affected by the plasma processing of the semiconductor, which affects the morphology and uniformity of the deposited film layer on the wafer surface.
- the present invention is directed to solving the above technical problems, and provides a ceramic ring which can change the surface morphology of a wafer surface in a semiconductor plasma processing process.
- the present invention adopts the following technical solution: a ceramic ring capable of changing the surface morphology of a wafer surface, the outer circumference of the ceramic ring 1 is formed with a step 4 for supporting the wafer 3; There is a gap 2 between the edge of the wafer 3 and the ceramic ring 1.
- the ceramic ring 1 is located on the stage 5 for carrying the wafer to be processed, and is characterized by:
- the height dl of the step 4 supporting the wafer 3 can be adjusted, and the change in the relative height of the step 4 of the ceramic ring 1 and the surface of the wafer 3 affects the airflow and plasma distribution at the edge of the wafer, thereby improving the process quality of the wafer edge.
- the ceramic ring is characterized in that the step 4 supporting the wafer 3 is a right angle.
- the ceramic ring is characterized in that: a gap 2 between the step 4 supporting the wafer and the wafer 3 is fixed.
- the groove depth affects the flow of the gas flow, thereby affecting the uniformity of the film layer.
- the invention can effectively adjust the airflow distribution at the ceramic ring step and the edge of the wafer, thereby affecting the uniformity of the plasma distribution and improving the film growth of the wafer edge. It is structurally sound, practical and easy to implement. It can be widely used in the technical field of semiconductor thin film deposition.
- FIG. 1 is a schematic view of the structure and application of the present invention.
- Fig. 3 is a comparison of the deposition of different ceramic ring step depths in the same process recipe according to the embodiment 2 of the present invention.
- Embodiment 1 of the present invention occurs in the SiH 4 process, and the reaction source is SiH 4 N 2 0.
- the hardware and substrate used in the experiment are as follows:
- the groove depth of the ceramic ring used in the embodiment is 0.5 mm-1.0 mm and 1.0-1.5 mm, respectively, and the ceramic ring is on the stage for supporting the object to be processed. .
- the substrate used in this embodiment is a silicon wafer having a diameter of 300 mm and a thickness of 0.775 ⁇ m.
- FIG. 2 is a comparison of the deposition of different ceramic ring step heights under the same process recipe. Taking the center of the silicon wafer as the origin, X
- the axis is a coordinate of 3 mm along the radial direction of the silicon wafer (-147 mm - 147 mm), and the y-axis is the ratio of the thickness of the film processed by the plasma in the radial direction to the thickness of the central film of the wafer.
- Embodiment 2 of the present invention occurs in the TEOS process, and the reaction sources are TEOS and 0 2 .
- the hardware and substrate used in the experiment are as follows:
- the ranges are 0.5mm-1.0mm and 1.0mm-1.5mm, respectively.
- the ceramic ring is on the stage for the support of the object to be processed.
- the substrate used in this embodiment was a silicon wafer having a diameter of 300 mm and a thickness of 0.775 ⁇ m.
- FIG. 3 is a comparison of the deposition of different ceramic ring groove depths under the same process recipe.
- the axis is a coordinate of 3 mm along the radial direction of the silicon wafer (-147 mm - 147 mm), and the y-axis is the ratio of the thickness of the film processed by the plasma in the radial direction to the thickness of the central film of the wafer.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A ceramic ring (1) capable of changing the shape and appearance of a surface thin film of a wafer (3) in a semiconductor plasma processing device. The ceramic ring (1) is located on an objective table (5), and is used for bearing a wafer (3) to be machined. An edge, supporting a step (4) of the wafer (3), of the ceramic ring (1) is at a right angle, and the height d1 of the step can be set differently. In a high-temperature process, when a plasma air flow passes through the edge of the step (4), the height d1 of the step exerts an impact on the flowing of the air flow, thereby impacting the uniformity of a film layer. The air flow distribution at the step (4) of the ceramic ring and the edge of the wafer (3) can be effectively adjusted, thereby impacting the uniformity of plasma distribution, and improving the growth condition of an edge thin film of the wafer (3). The ceramic ring is reasonable in structure, is practical and is easy to implement. The ceramic ring can be widely used in the technical field of semiconductor film deposition.
Description
说明书 发明名称：一种可改变晶圆表面薄膜形貌的陶瓷环 技术领域 Description: A ceramic ring that changes the topography of a wafer surface.
[0001] 本发明涉及一种半导体镀膜设备用的晶圆承载陶瓷环， 主要应用于半导体镀膜 设备反应腔内常温或高温工艺过程中， 属于半导体薄膜沉积的应用技术领域。 背景技术 [0001] The present invention relates to a wafer-bearing ceramic ring for a semiconductor coating device, which is mainly used in a normal temperature or high temperature process in a reaction chamber of a semiconductor coating device, and belongs to the technical field of application of semiconductor thin film deposition. Background technique
[0002] 现有等离子体处理装置， 晶圆承载所用陶瓷环的圆形凹槽尺寸固定， 在工艺过 程中， 由于气体运输方向为由载物台中心向外围运输， 从载物台周围的抽气陶 瓷环抽走。 在此过程中， 支撑晶圆的台阶部分高于晶圆， 会影响晶圆边缘气流 的流动， 容易造成此处气体分布发生改变， 从而造成等离子分布变化。 在上述 等离子体分布不均匀的情况下， 体现在半导体的等离子体处理过程中就是对晶 圆沉积薄膜厚度的影响， 会影响晶圆表面所沉积薄膜层的形貌以及均匀性。 [0002] In the prior art plasma processing apparatus, the circular groove of the ceramic ring used for wafer bearing is fixed in size, and during the process, since the gas transportation direction is transported from the center of the stage to the periphery, the pumping is carried out from the periphery of the stage. The gas ceramic ring is pumped away. During this process, the stepped portion of the supporting wafer is higher than the wafer, which affects the flow of the airflow at the edge of the wafer, which easily causes a change in the gas distribution here, thereby causing a change in the plasma distribution. In the case where the above plasma distribution is uneven, the influence of the thickness of the deposited film on the surface of the wafer is affected by the plasma processing of the semiconductor, which affects the morphology and uniformity of the deposited film layer on the wafer surface.
[0003] 目前， 随着半导体技术的不断发展， 对薄膜性能的要求不断提高。 因此， 提高 等离子体工艺制程的均匀性， 改善薄膜层的表面形貌及均匀性至关重要。 本发 明中设计的陶瓷环可在不改变腔体结构及其它硬件的前提下对其进行调整。 技术问题 [0003] At present, with the continuous development of semiconductor technology, the requirements for film performance are continuously improved. Therefore, it is important to improve the uniformity of the plasma process and improve the surface topography and uniformity of the film layer. The ceramic ring designed in the present invention can be adjusted without changing the cavity structure and other hardware. technical problem
[0004] 本发明是以解决上述技术问题为目的， 而提供一种半导体等离子体处理工艺制 程中， 可改变晶圆表面薄膜形貌的陶瓷环。 The present invention is directed to solving the above technical problems, and provides a ceramic ring which can change the surface morphology of a wafer surface in a semiconductor plasma processing process.
问题的解决方案 Problem solution
技术解决方案 Technical solution
[0005] 为实现上述目的， 本发明采用下述技术方案： 一种可改变晶圆表面薄膜形貌的 陶瓷环， 所述陶瓷环 1的外圆制有承托晶圆 3的台阶 4; 上述晶圆 3的边缘与陶瓷 环 1间有间隙 2。 [0005] In order to achieve the above object, the present invention adopts the following technical solution: a ceramic ring capable of changing the surface morphology of a wafer surface, the outer circumference of the ceramic ring 1 is formed with a step 4 for supporting the wafer 3; There is a gap 2 between the edge of the wafer 3 and the ceramic ring 1.
[0006] 所述陶瓷环 1位于载物台 5上， 用于待加工晶圆的承载， 其特征在于： [0006] The ceramic ring 1 is located on the stage 5 for carrying the wafer to be processed, and is characterized by:
承托晶圆 3的台阶 4的高度 dl可以进行调整， 陶瓷环 1的台阶 4与晶圆 3表面相对高 度发生变化会影响晶圆边缘气流及等离子体分布， 从而改善晶圆边缘的工艺质
[0007] 进一步地， 所述陶瓷环， 其特征在于： 承托晶圆 3的台阶 4为直角。 The height dl of the step 4 supporting the wafer 3 can be adjusted, and the change in the relative height of the step 4 of the ceramic ring 1 and the surface of the wafer 3 affects the airflow and plasma distribution at the edge of the wafer, thereby improving the process quality of the wafer edge. Further, the ceramic ring is characterized in that the step 4 supporting the wafer 3 is a right angle.
[0008] 进一步地， 所述陶瓷环， 其特征在于： 承托晶圆的台阶 4与晶圆 3之间的间隙 2 固定。 Further, the ceramic ring is characterized in that: a gap 2 between the step 4 supporting the wafer and the wafer 3 is fixed.
[0009] 本发明在高温工艺过程中， 当等离子体气流通过凹槽边缘吋， 凹槽深度对气流 的流动产生影响， 从而影响膜层的均匀性。 [0009] In the high temperature process of the present invention, when the plasma gas flow passes through the edge of the groove, the groove depth affects the flow of the gas flow, thereby affecting the uniformity of the film layer.
发明的有益效果 Advantageous effects of the invention
有益效果 Beneficial effect
[0010] 本发明可以有效的调整陶瓷环台阶与晶圆边缘处的气流分布， 从而影响等离子 体分布的均匀性， 改善晶圆边缘薄膜生长情况。 具有结构合理， 实用且易于实 现的特点。 可广泛地应用于半导体薄膜沉积的技术领域。 [0010] The invention can effectively adjust the airflow distribution at the ceramic ring step and the edge of the wafer, thereby affecting the uniformity of the plasma distribution and improving the film growth of the wafer edge. It is structurally sound, practical and easy to implement. It can be widely used in the technical field of semiconductor thin film deposition.
对附图的简要说明 Brief description of the drawing
附图说明 DRAWINGS
[0011] 图 1是本发明结构及应用示意图。 1 is a schematic view of the structure and application of the present invention.
[0012] 图 2是本发明实施例 1在相同工艺配方下不同陶瓷环台阶深度的沉积情况对比。 2 is a comparison of deposition of different ceramic ring step depths in the same process recipe according to Embodiment 1 of the present invention.
图 3是本发明实施例 2在相同工艺配方下不同陶瓷环台阶深度的沉积情况对比。 实施该发明的最佳实施例 Fig. 3 is a comparison of the deposition of different ceramic ring step depths in the same process recipe according to the embodiment 2 of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION
本发明的最佳实施方式 BEST MODE FOR CARRYING OUT THE INVENTION
[0013] 面结合附图和具体实施例对本发明做进一步详细说明。 根据下面说明， 本发明 的优点和特征将更清楚。 本文以射频电离方式形成等离子体为例， 对本发明的 内容进行描述。 需说明的是， 实施例所用的附图均采用简化图， 以便于辅助实 施例的解释说明。 [0013] The present invention will be further described in detail in conjunction with the drawings and specific embodiments. Advantages and features of the present invention will become more apparent from the description. The present invention is described by taking a plasma ionization method to form a plasma as an example. It is to be noted that the drawings used in the embodiments are in simplified form in order to facilitate the explanation of the embodiments.
[0014] 实施例 1 [0014] Embodiment 1
[0015] 本发明的实施例 1发生在 SiH 4工艺制程中， 反应源为 SiH 4 N 20， 实验所用硬 件及衬底如下： [0015] Embodiment 1 of the present invention occurs in the SiH 4 process, and the reaction source is SiH 4 N 2 0. The hardware and substrate used in the experiment are as follows:
[0016] 1、 请参考图 1， 本实施例所用载物陶瓷环凹槽深度 范围分别为 0.5mm-1.0mm 和 1.0-1.5mm， 陶瓷环在载物台上， 用于待加工物体的支撑。 [0016] 1. Referring to FIG. 1, the groove depth of the ceramic ring used in the embodiment is 0.5 mm-1.0 mm and 1.0-1.5 mm, respectively, and the ceramic ring is on the stage for supporting the object to be processed. .
[0017] 2、 本实施例所用衬底是直径为 300mm的硅片， 厚度为 0.775μηι。
[0018] 请参考图 2， 该图是在相同工艺配方下不同陶瓷环台阶高度的沉积情况对比。 以硅片的圆心为原点， X [0017] 2. The substrate used in this embodiment is a silicon wafer having a diameter of 300 mm and a thickness of 0.775 μm. [0018] Please refer to FIG. 2, which is a comparison of the deposition of different ceramic ring step heights under the same process recipe. Taking the center of the silicon wafer as the origin, X
轴是沿着硅片径向距离硅片边 3mm的坐标由 （-147mm- 147mm) ， y轴是硅片表 面沿着径向方向经过等离子体处理的薄膜厚度与硅片中心薄膜厚度的比值。 可 见， 支撑硅片陶瓷环凹槽深度不同， 经过等离子体处理的薄膜厚度差异在硅片 边缘体现的尤为明显， 因此， 若调整晶圆表面所沉积薄膜的形貌， 或改善薄膜 厚度的均匀性， 该陶瓷环将起到至关重要的作用 本发明的实施方式 The axis is a coordinate of 3 mm along the radial direction of the silicon wafer (-147 mm - 147 mm), and the y-axis is the ratio of the thickness of the film processed by the plasma in the radial direction to the thickness of the central film of the wafer. It can be seen that the groove depth of the ceramic wafer supporting the silicon wafer is different, and the thickness difference of the plasma-treated film is particularly obvious at the edge of the silicon wafer. Therefore, if the morphology of the deposited film on the surface of the wafer is adjusted, or the uniformity of the thickness of the film is improved, , the ceramic ring will play a vital role in the embodiment of the invention
[0019] 实施例 2 [0019] Example 2
[0020] 本发明实施例 2是发生在 TEOS工艺制程中， 反应源为 TEOS和 0 2， 实验所用硬 件及衬底如下： [0020] Embodiment 2 of the present invention occurs in the TEOS process, and the reaction sources are TEOS and 0 2 . The hardware and substrate used in the experiment are as follows:
[0021] 1、 请参考图1， 本实施例所用载物陶瓷环凹槽深度 [0021] 1. Please refer to FIG. 1 , the groove depth of the carrier ceramic ring used in this embodiment
范围分别为 0.5mm-1.0mm和 1.0mm-1.5mm， 陶瓷环在载物台上， 用于待加工物 体的支撑。 The ranges are 0.5mm-1.0mm and 1.0mm-1.5mm, respectively. The ceramic ring is on the stage for the support of the object to be processed.
[0022] 本实施例所用衬底是直径为 300mm的硅片， 厚度为 0.775μηι。 [0022] The substrate used in this embodiment was a silicon wafer having a diameter of 300 mm and a thickness of 0.775 μm.
[0023] 请参考图 3， 该图是在相同工艺配方下不同陶瓷环凹槽深度的沉积情况对比。 [0023] Please refer to FIG. 3, which is a comparison of the deposition of different ceramic ring groove depths under the same process recipe.
以硅片的圆心为原点， X Taking the center of the silicon wafer as the origin, X
轴是沿着硅片径向距离硅片边 3mm的坐标由 （-147mm- 147mm) ， y轴是硅片表 面沿着径向方向经过等离子体处理的薄膜厚度与硅片中心薄膜厚度的比值。 可 见， 支撑硅片陶瓷环凹槽深度不同， 经过等离子体处理的薄膜厚度差异在硅片 边缘体现的尤为明显， 因此， 若调整晶圆表面所沉积薄膜的形貌， 或改善薄膜 厚度的均匀性， 该陶瓷环将起到至关重要的作用。 The axis is a coordinate of 3 mm along the radial direction of the silicon wafer (-147 mm - 147 mm), and the y-axis is the ratio of the thickness of the film processed by the plasma in the radial direction to the thickness of the central film of the wafer. It can be seen that the groove depth of the ceramic wafer supporting the silicon wafer is different, and the thickness difference of the plasma-treated film is particularly obvious at the edge of the silicon wafer. Therefore, if the morphology of the deposited film on the surface of the wafer is adjusted, or the uniformity of the thickness of the film is improved, The ceramic ring will play a vital role.
工业实用性 Industrial applicability
[0024] 在此处键入工业实用性描述段落。 [0024] Enter the paragraph of industrial applicability description here.
序列表自由内容 Sequence table free content
[0025] 在此处键入序列表自由内容描述段落。
[0025] Type the sequence table free content description paragraph here.
Claims
[权利要求 1] 一种可改变晶圆表面薄膜形貌的陶瓷环， 其特征在于： 所述陶瓷环的 外圆制有承托晶圆的台阶。 [Claim 1] A ceramic ring capable of changing a film topography of a wafer surface, characterized in that: the outer circumference of the ceramic ring is formed with a step for supporting a wafer.
[权利要求 2] 如权利要求 1所述的可改变晶圆表面薄膜形貌的陶瓷环， 其特征在于 [Claim 2] The ceramic ring capable of changing the surface morphology of the wafer surface according to claim 1, wherein
： 所述陶瓷环位于载物台上， 用于待加工晶圆的承载， 所述承托晶 圆的台阶 4的高度 (^可以进行调整， 陶瓷环的台阶与晶圆表面相对高 度发生变化会影响晶圆边缘气流及等离子体分布， 从而改善晶圆边缘 的工艺质量。 : the ceramic ring is located on the stage for carrying the wafer to be processed, and the height of the step 4 of the supporting wafer can be adjusted, and the height of the step of the ceramic ring and the relative height of the wafer surface change. Affects wafer edge airflow and plasma distribution to improve process quality at the edge of the wafer.
[权利要求 3] 如权利要求 1所述的可改变晶圆表面薄膜形貌的陶瓷环， 其特征在于 [Claim 3] The ceramic ring capable of changing the surface morphology of the wafer surface according to claim 1, wherein
： 所述承托晶圆的台阶 4为直角。 : The step 4 of the supporting wafer is a right angle.
[权利要求 4] 如权利要求 1所述的可改变晶圆表面薄膜形貌的陶瓷环， 其特征在于[Claim 4] The ceramic ring capable of changing the surface morphology of the wafer surface according to claim 1, wherein
： 晶圆的边缘与承托晶圆的台阶之间有间隙， 且间隙固定。
: There is a gap between the edge of the wafer and the step of the supporting wafer, and the gap is fixed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510524095.1A CN105185732A (en) | 2015-08-24 | 2015-08-24 | Ceramic ring capable of changing shape and appearance of surface film of wafer |
| CN201510524095.1 | 2015-08-24 |
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| WO2017031821A1 true WO2017031821A1 (en) | 2017-03-02 |
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| PCT/CN2015/092365 WO2017031821A1 (en) | 2015-08-24 | 2015-10-21 | Ceramic ring capable of changing shape and appearance of surface thin film of wafer |
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| CN113802111B (en) * | 2020-06-13 | 2023-10-31 | 拓荆科技股份有限公司 | Equipment for treating substrates using plasma and methods for improving surface morphology of wafer thin films |
| CN112779522B (en) * | 2020-12-28 | 2023-11-28 | 芯思杰技术(深圳)股份有限公司 | Coating device and coating method |
| CN112786522A (en) * | 2020-12-31 | 2021-05-11 | 拓荆科技股份有限公司 | Tray device capable of adjusting thickness of edge film of wafer |
| CN113151807A (en) * | 2021-03-25 | 2021-07-23 | 拓荆科技股份有限公司 | Shadow ring and reaction cavity structure comprising same |
| CN114203513A (en) * | 2021-12-14 | 2022-03-18 | 拓荆科技股份有限公司 | Power electrode and plasma processing equipment |
| CN114351120A (en) * | 2021-12-27 | 2022-04-15 | 拓荆科技股份有限公司 | Wafer support device and method for thickness control of deposited film |
| CN114318305B (en) * | 2021-12-28 | 2023-06-30 | 拓荆科技股份有限公司 | Wafer film deposition device |
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| CN1682344A (en) * | 2002-09-18 | 2005-10-12 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
| US20050155718A1 (en) * | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
| CN1825556A (en) * | 2005-02-25 | 2006-08-30 | 佳能安内华股份有限公司 | wafer holder |
| CN202076225U (en) * | 2009-11-02 | 2011-12-14 | 朗姆研究公司 | Plasma processing chamber and heat edge ring with inclined upper surface |
| CN103811247A (en) * | 2014-02-17 | 2014-05-21 | 清华大学 | Focusing ring for plasma etching and plasma etching device with same |
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| CN105185732A (en) | 2015-12-23 |
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