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WO2016161907A1 - 一种蒸镀装置 - Google Patents

一种蒸镀装置 Download PDF

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Publication number
WO2016161907A1
WO2016161907A1 PCT/CN2016/077506 CN2016077506W WO2016161907A1 WO 2016161907 A1 WO2016161907 A1 WO 2016161907A1 CN 2016077506 W CN2016077506 W CN 2016077506W WO 2016161907 A1 WO2016161907 A1 WO 2016161907A1
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WO
WIPO (PCT)
Prior art keywords
vapor deposition
evaporation
unit
vapor
substrate
Prior art date
Application number
PCT/CN2016/077506
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English (en)
French (fr)
Inventor
裴凤巍
赵子仪
崔富毅
张金中
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/321,442 priority Critical patent/US20170211172A1/en
Publication of WO2016161907A1 publication Critical patent/WO2016161907A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Definitions

  • the present invention relates to the field of electronic component manufacturing technology, and in particular to a vapor deposition apparatus.
  • An evaporation device for vaporizing an organic material is generally designed to include a plurality of independent evaporation chambers and an evaporation source located in each evaporation chamber.
  • the degree of vacuum of each evaporation chamber needs to be independently controlled, and only one material can be vaporized in each evaporation chamber.
  • the evaporation chamber needs to be evacuated. Therefore, the vapor deposition apparatus of the prior art is complicated, and the transfer and evacuation time is long.
  • the technical solution adopted by the present invention is to propose an evaporation device.
  • An evaporation device includes an evaporation chamber for vapor deposition of a substrate to be evaporated, the evaporation chamber comprising: a plurality of isolation units, the plurality of isolation units, the evaporation chamber The chamber is divided into a plurality of vapor deposition sub-chambers; a plurality of evaporation sources respectively located in the plurality of evaporation sub-chambers; and a transfer unit, the transfer unit being disposed opposite to the evaporation source And for moving the substrate to be vapor-deposited between the plurality of vapor deposition sub-chambers.
  • the isolation unit is capable of being opened and/or closed to communicate with adjacent vapor deposition subchambers; and when the isolation unit is opened, the substrate to be vaporized can be steamed through the isolation unit The plated chamber is moved to another vapor deposition subchamber that is in communication; and the vapor deposition subchamber is isolated when the isolation unit is closed.
  • the isolation unit is composed of an upper partition and a lower partition; and when the isolation unit is closed to isolate adjacent vapor deposition sub-chambers, the upper partition and the lower The separator forms an overlapping portion.
  • the transfer unit includes a magnetic spacer for adsorbing the substrate to be evaporated; and the magnetic spacer enables the substrate to be evaporated to be horizontal between the plurality of vapor deposition sub-chambers Move or move vertically in the vapor deposition subchamber.
  • the transport unit further includes a plurality of supporting devices for assisting the magnetic spacer to fix and move the substrate to be evaporated; and the supporting device is disposed on opposite sides of the magnetic spacer, In order to support the substrate to be evaporated.
  • the evaporation chamber further includes: a mask unit disposed between the evaporation source 4 and the transfer unit for selectively permeating a substance of the evaporation source so as to be in the An evaporation pattern is formed on the vapor deposition substrate; and the mask unit is disposed on a side of the transfer unit opposite to the evaporation source by a support rod.
  • the mask unit includes a mask and a cooling plate in contact with a side of the mask toward the evaporation source, the cooling plate being used to cool the mask and the substrate to be vapor-deposited.
  • the cooling plate has an opening that exposes a portion of the pattern of the mask.
  • the vapor deposition subchamber includes a shutter unit capable of blocking the evaporation source.
  • the shielding unit comprises a fixing plate connected to the isolation unit on one side of the vapor deposition sub-chamber; a shielding plate, the shielding plate can block the evaporation source; and the transmission a shaft for connecting the fixing plate and the shielding plate and capable of driving the shielding plate to move.
  • the evaporation chamber further includes a driving unit for driving the movement of the conveying unit.
  • the driving unit is coupled to the main shaft of the magnetic partition for driving the movement of the magnetic partition.
  • the vapor deposition chamber of the vapor deposition device includes a plurality of vapor deposition sub-chambers.
  • the substrate to be vapor-deposited can complete the plating of each layer in a plurality of vapor deposition sub-chambers of the same evaporation chamber, thereby saving the transfer time of the substrate to be vapor-deposited.
  • the vapor deposition chamber can be maintained under the same vacuum environment, and each vapor deposition sub-chamber does not need to be separately vacuumed, thereby Save time in vacuuming.
  • FIG. 1 is a front elevational view of an evaporation apparatus in accordance with an embodiment of the present invention, wherein a vapor deposition subchamber of the evaporation apparatus (eg, a first evaporation subchamber) is operated to perform evaporation, while others The vapor deposition subchamber is not operated.
  • a vapor deposition subchamber of the evaporation apparatus eg, a first evaporation subchamber
  • the vapor deposition subchamber is not operated.
  • FIG. 2 is a top plan view of an evaporation apparatus according to an embodiment of the present invention, in which a vapor deposition sub-chamber of an evaporation apparatus (for example, a first evaporation sub-chamber) is operated for evaporation, and other evaporation is performed.
  • the subchamber is not operated.
  • FIG 3 is a cross-sectional view of a transfer unit in accordance with an embodiment of the present invention.
  • FIG. 4 is a plan view of a transfer unit in accordance with an embodiment of the present invention.
  • Figure 5 is a cross-sectional view of a mask unit in accordance with an embodiment of the present invention.
  • Figure 6 is a plan view of a mask unit in accordance with an embodiment of the present invention.
  • Figure 7 is a cross-sectional view showing a combination of a mask unit and a transfer unit in accordance with an embodiment of the present invention.
  • Figure 8 is a front elevational view of an evaporation apparatus in accordance with an embodiment of the present invention, wherein a plurality of vapor deposition subchambers of the evaporation apparatus are operated to perform evaporation.
  • a vapor deposition apparatus includes a vapor deposition chamber 1 for performing vapor deposition on a vapor deposition substrate.
  • the evaporation chamber includes: a plurality of isolations a unit 3, the plurality of isolation units 3 divide the vapor deposition chamber 1 into a plurality of vapor deposition sub-chambers 2; a plurality of evaporation sources 4, the plurality of evaporation sources 4 being respectively located in the plurality of evaporation plates In the sub-chamber 2; and a transfer unit 5, the transfer unit 5 is disposed opposite to the evaporation source 4 and is used to move the substrate to be vapor-deposited 11 between the plurality of vapor deposition sub-chambers 2.
  • the evaporation chamber of the vapor deposition device includes a plurality of vapor deposition sub-chambers.
  • the substrate to be vapor-deposited can complete the plating of each layer in a plurality of vapor deposition sub-chambers of the same evaporation chamber, thereby saving the transfer time of the substrate to be vapor-deposited.
  • the vapor deposition chamber can be maintained under the same vacuum environment, and each vapor deposition sub-chamber does not need to be separately vacuumed, thereby saving the vacuuming time.
  • the vapor deposition apparatus may further have a closed door 10 at the inlet end of the vapor deposition chamber 1.
  • the substrate 11 to be vapor-deposited can be placed in the vapor deposition chamber 1 through the closing door 10 or taken out from the vapor deposition chamber 1.
  • the closing doors 10 are kept closed to maintain the vacuum environment in the vapor deposition chamber 1.
  • the evaporation chamber 1 may also be equipped with an evacuation device or a pressure buffer chamber known to those skilled in the art to maintain a stable vacuum state within the evaporation chamber 1.
  • the isolation unit 3 can be opened and/or closed to allow adjacent vapor deposition subchambers 2 to communicate.
  • the isolation unit 3 is opened, the substrate 11 to be vapor-deposited can be moved from one evaporation sub-chamber 2 to another vapor deposition sub-chamber 2 that is in communication through the isolation unit 3.
  • the vapor deposition subchamber 2 may be isolated when the isolation unit 3 is closed.
  • the isolation unit 3 can prevent the evaporation source 4 from contaminating the adjacent vapor deposition sub-chamber 2 when vapor-depositing the substrate 11 to be vapor-deposited.
  • the isolation unit 3 may be composed of an upper partition 31 and a lower partition 32.
  • the isolation unit 3 When the isolation unit 3 is closed to isolate the adjacent vapor deposition sub-chambers 2, the upper partition plate 31 and the lower partition plate 32 form an overlapping portion. It is easily conceivable that the upper partition 31 and the lower partition 32 can be moved in the vertical direction by a drive means (not shown) known in the prior art to open and/or close the isolation unit 3.
  • the vapor deposition subchamber 2 includes a shielding unit 8 capable of blocking the evaporation source 4.
  • Occlusion unit 8 can block unused Evaporating source 4 to prevent evaporation of the vaporized material to an undesired location.
  • the shielding unit 8 includes: a fixing plate 82 connected to the isolation unit 3 on one side of the vapor deposition sub-chamber 2; a shielding plate 83, the shielding plate 83 can block the shelter The evaporation source 4; and a transmission shaft 81 for connecting the fixing plate 82 and the shielding plate 83 and capable of driving the shielding plate 83 to move.
  • the fixing plate 82 of the shutter unit 8 can be fixed to the lower partition 32.
  • the transmission shaft 81 can be moved relative to the fixed plate 82 without affecting the movement of the upper partition 31, and the shielding plate 83 can be rotated relative to the transmission shaft 81.
  • the shielding plate 83 covers the evaporation source 4 by the rotating shaft 81; when the evaporation source 4 is not required to be blocked, the shielding plate 83 is moved to the vicinity of the fixing plate 82 through the transmission shaft 81 and with the fixing plate 82. Place in parallel. This saves space and reduces the impact on evaporation.
  • the transfer unit 5 includes a magnetic spacer 51 for adsorbing the substrate 11 to be evaporated, and the magnetic spacer 51 enables the substrate 11 to be evaporated to be in the The plurality of vapor deposition subchambers 2 are horizontally moved or vertically moved in the vapor deposition subchamber 2.
  • the substrate 11 to be vapor-deposited can be moved in the vapor deposition chamber 1 through the magnetic separator 51 so as to be aligned with the mask unit 6.
  • a magnetic field generated by energization of the magnetic separator 51 described above can be used to adsorb the substrate 11 to be vapor-deposited.
  • the transfer unit 5 further includes a plurality of supporting devices 52 for assisting the magnetic separator 51 to fix and move the substrate 11 to be evaporated; and the support Devices 52 are disposed on opposite sides of the magnetic separator 51 to support the substrate 11 to be vapor-deposited.
  • the support device 52 is detached from the substrate 11 to be vapor-deposited, so that the substrate 11 to be vapor-deposited can be bonded to the mask 61 for vapor deposition. .
  • the vapor deposition chamber 1 is further included.
  • a mask unit 6 disposed between the evaporation source 4 and the transfer unit 5 for selectively permeating a substance of the evaporation source 4 to form an evaporation on the substrate 11 to be vapor-deposited pattern.
  • the mask unit 6 is disposed on the side of the transfer unit 5 opposite to the evaporation source 4 via a support rod 7.
  • the mask unit 6 is located above each vapor deposition subchamber 2 and is fixed by a support rod 7. Further, the substrate 11 to be vapor-deposited into the vapor deposition sub-chamber 2 is aligned with the mask 61. It should be understood that the support rod 7 and the transfer unit 5 can cooperate to complete the alignment of the substrate 11 to be vapor-deposited with the mask 61.
  • the substrate 11 to be evaporated and the mask 61 may be provided with positioning holes, and the alignment of the positioning holes is checked by the camera to determine whether the alignment is completed. It should be understood that any alignment means known to those skilled in the art may be employed.
  • the mask unit 6 includes a mask 61 and a cooling plate 62 that is in contact with a side of the mask 61 facing the evaporation source 4, and the cooling plate 62 is used to cool the mask 61 and the substrate 11 to be vapor-deposited.
  • the cooling plate 62 has an opening for exposing the pattern portion of the masking plate 61; the cooling plate 62 may contain cooling circulating water therein to absorb the radiant heat of the evaporation source 4, thereby preventing the masking plate 61 and The substrate 11 to be vapor-deposited to which the mask sheet 61 is bonded is deformed by heat during vapor deposition or causes other defects.
  • the evaporation chamber 1 further includes a driving unit (not shown) for driving the movement of the transfer unit 5 so that the transfer unit 5 carrying the substrate 11 to be vapor-deposited is along the map
  • the directions of the arrows in 1 and 8 are transferred between the respective vapor deposition sub-chambers 2.
  • the drive unit may be known to those skilled in the art and includes components such as a motor, a drive shaft, etc., as long as it can be coupled to the transmission unit and can control the movement of the transmission unit in the vertical and horizontal directions in the evaporation chamber 1 can.
  • the driving unit is coupled to the main shaft 9 of the magnetic separator 51 for driving the movement of the magnetic separator 51.
  • the main shaft 9 is coupled to the driving unit to drive the magnetic separator 51 to move in the vertical direction and the horizontal direction in the vapor deposition chamber 1. It should be understood that the drive unit may be coupled to the magnetic partition 51 in other manners.
  • Step 1 Feeding
  • the vapor deposition chamber 1 was evacuated and maintained in a vacuum state.
  • the sealing door 10 at the inlet end of the vapor deposition chamber 1 is opened.
  • the left side isolation unit 3 of the leftmost first vapor deposition sub-chamber 2 in FIG. 1 is opened, so that the transfer unit 5 carrying the substrate 11 to be vapor-deposited enters the leftmost first vapor deposition sub-chamber 2.
  • the isolation unit 3 is closed to close the first vapor deposition subchamber 2.
  • the substrate 11 to be vapor-deposited carried by the transfer unit 5 is aligned with the mask unit 6 supported by the support rod 7. Specifically, the magnetic separator 51 is moved in the vapor deposition sub-chamber 2 by the driving of the spindle 9, while the positioning holes of the substrate 11 and the mask unit 6 to be vapor-deposited are detected by the image pickup unit and it is judged whether or not the alignment is completed. In the case of alignment, the support device 2 is separated from the substrate 11 to be vapor-deposited, and the substrate 11 to be vapor-deposited is bonded to the mask 61.
  • the shutter unit 8 above the evaporation source 4 is removed. Specifically, the shutter 83 located above the evaporation source 4 is moved to one side of the fixed plate 82 by the transmission shaft 81. Then, the evaporation source 4 is vapor-deposited on the substrate 11 to be vapor-deposited on the upper side, and the vapor deposition material forms a vapor deposition pattern on the substrate 11 to be vapor-deposited through the mask 61.
  • Step 4 Move to the next evaporation chamber
  • the evaporation source 4 is blocked by the shielding plate 83. Then, the right side isolation unit 3 of the vapor deposition sub-chamber 2 is opened, and the drive unit transfers the substrate to be vapor-deposited 11 to the next vapor deposition sub-chamber by driving the transfer unit 5. Next, steps 2 and 3 are repeated until the discharge of the vapor-deposited substrate from the outlet end of the vapor deposition chamber 1 is completed.
  • the embodiment of the present invention may vapor-deposit a plurality of substrates 11 to be vapor-deposited in a plurality of vapor deposition sub-chambers 2.
  • the shielding unit 8, the transfer unit 5, and the isolation unit 3 of each of the vapor deposition sub-chambers 2 can individually control the evaporation of the respective substrates to be vapor-deposited 11.

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  • Engineering & Computer Science (AREA)
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Abstract

一种蒸镀装置，包括用于对待蒸镀基板（11）进行蒸镀的蒸镀腔室（1）。蒸镀腔室（1）包括：多个隔离单元（3），多个隔离单元（3）将蒸镀腔室（1）划分成多个蒸镀子腔室（2）；多个蒸发源（4），多个蒸发源（4）分别位于多个蒸镀子腔室（2）中；以及传送单元（5），传送单元（5）与蒸发源（4）相对设置并且用于使待蒸镀基板（11）在多个蒸镀子腔室（2）之间移动。

Description

一种蒸镀装置 技术领域
本发明涉及电子元器件制造技术领域，具体地说，涉及一种蒸镀装置。
背景技术
蒸镀有机材料的蒸镀装置一般设计为包括多个独立的蒸发腔室和位于各个蒸发腔室中的蒸发源。每个蒸发腔室的真空度需要独立控制，并且在每个蒸发腔室中只能蒸镀一种材料。当需要在待蒸镀基板上蒸镀多种材料时，需要单独设置传送腔室以使待蒸镀基板能够在各个独立的蒸发腔室之间进行传递。在待蒸镀基板进入蒸发腔室时，需要对蒸发腔室进行抽真空处理。因此，现有技术中的蒸镀装置比较复杂，并且传送和抽真空时间长。
发明内容
为了解决上述问题，本发明所采用的技术方案是提出一种蒸镀装置。
本发明提供的一种蒸镀装置包括用于对待蒸镀基板进行蒸镀的蒸镀腔室，所述的蒸镀腔室包括：多个隔离单元所述多个隔离单元将所述蒸镀腔室划分成多个蒸镀子腔室；多个蒸发源，所述多个蒸发源分别位于所述多个蒸镀子腔室中；以及传送单元，所述传送单元与所述蒸发源相对设置并且用于使所述待蒸镀基板在所述多个蒸镀子腔室之间移动。
优选的是，所述隔离单元能够打开和/或关闭，以使相邻的蒸镀子腔室相通；在所述隔离单元打开时，所述待蒸镀基板能够通过所述隔离单元从一个蒸镀子腔室移动到相通的另一个蒸镀子腔室；并且在所述隔离单元关闭时，所述蒸镀子腔室被隔离开。
优选的是，所述隔离单元由上隔板和下隔板组成；并且当所述隔离单元关闭以将相邻的蒸镀子腔室隔离开时，所述上隔板和所述下 隔板形成重叠部分。
优选的是，所述传送单元包括用于吸附所述待蒸镀基板的磁隔板；并且所述磁隔板能够使所述待蒸镀基板在所述多个蒸镀子腔室之间水平移动，或者在所述蒸镀子腔室中竖直移动。
优选的是，所述传送单元还包括多个支撑装置，用于辅助所述磁隔板固定并移动所述待蒸镀基板；并且所述支撑装置设置在所述磁隔板的相对两侧，以便支撑所述待蒸镀基板。
优选的是，所述蒸镀腔室还包括：设置在所述蒸发源4和所述传送单元之间的掩膜板单元，用于使蒸发源的物质选择性透过，以便在所述待蒸镀基板上形成蒸镀图案；并且所述掩膜板单元通过支撑杆设置在所述传送单元的与所述蒸发源相对的一侧。
优选的是，所述掩膜板单元包括掩膜板和与所述掩膜板的朝向所述蒸发源一侧接触的冷却板，所述冷却板用于冷却掩膜板和待蒸镀基板。
优选的是，所述的冷却板具有使所述掩膜板的图案部分暴露的开口。
优选的是，所述蒸镀子腔室包括能够遮挡所述蒸发源的遮挡单元。
优选的是，所述遮挡单元包括固定板，所述固定板与所述蒸镀子腔室的一侧的所述隔离单元连接；遮挡板，所述遮挡板能够遮挡所述蒸发源；以及传动轴，所述传动轴用于连接所述固定板与所述遮挡板并且能够驱动所述遮挡板移动。
优选的是，所述蒸镀腔室还包括驱动单元，所述驱动单元用于驱动所述传送单元运动。
优选的是，所述驱动单元与所述磁隔板的主轴连接，用于驱动述磁隔板运动。
本发明的实施方式提供的蒸镀装置的蒸镀腔室包括多个蒸镀子腔室。待蒸镀基板可以在同一个蒸镀腔室的多个蒸镀子腔室中完成各层镀蒸，从而节省待蒸镀基板的传送时间。另外，蒸镀腔室可以维持在同一真空环境下，各蒸镀子腔室不需要单独进行抽真空处理，从而 节省抽真空时间。
附图说明
图1为根据本发明实施例的蒸镀装置的正面示意图，其中所述蒸镀装置的一个蒸镀子腔室(例如，第一个蒸镀子腔室)被操作以进行蒸镀，而其他蒸镀子腔室没有被操作。
图2为根据本发明实施例的蒸镀装置的俯视示意图，其中蒸镀装置的一个蒸镀子腔室(例如，第一个蒸镀子腔室)被操作以进行蒸镀，而其他蒸镀子腔室没有被操作。
图3为根据本发明实施例的传送单元的剖视图。
图4为根据本发明实施例的传送单元的平面图。
图5为根据本发明实施例的掩膜板单元剖视图。
图6为根据本发明实施例的掩膜板单元的平面图。
图7为根据本发明实施例的掩膜板单元与传送单元组合的剖视图。
图8为根据本发明实施例的蒸镀装置正面示意图，其中所述蒸镀装置的多个蒸镀子腔室被操作以进行蒸镀。
附图标记列表如下：
1.蒸镀腔室；2.蒸镀子腔室；3.隔离单元；31.上隔板；32.下隔板；4.蒸发源；5.传送单元；51.磁隔板；52.支撑装置；6.掩膜板单元；61.掩膜板；62.冷却板；7.支撑杆；8.遮挡单元；81.传动轴；82.固定板；83.遮挡板；9.主轴；10.封闭门；11.待蒸镀基板。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
如图1所示，本实施例提供的一种蒸镀装置包括：用于对待蒸镀基板进行蒸镀的蒸镀腔室1。所述蒸镀腔室包括：多个隔离 单元3，所述多个隔离单元3将所述蒸镀腔室1划分成多个蒸镀子腔室2；多个蒸发源4，所述多个蒸发源4分别位于所述多个蒸镀子腔室2中；以及传送单元5，所述传送单元5与所述蒸发源4相对设置并且用于使所述待蒸镀基板11在所述多个蒸镀子腔室2之间移动。
根据本实施例的蒸镀装置的蒸镀腔室包括多个蒸镀子腔室。待蒸镀基板可以在同一个蒸镀腔室的多个蒸镀子腔室中完成各层镀蒸，从而节省待蒸镀基板的传送时间。另外，蒸镀腔室可以维持在同一真空环境下，各蒸镀子腔室不需要单独进行抽真空处理，从而节省抽真空时间。
根据本实施例的蒸镀装置还可以具有位于蒸镀腔室1进口端的封闭门10。待蒸镀基板11可以通过封闭门10放入蒸镀腔室1或者从蒸镀腔室1中取出。在对待蒸镀基板11进行蒸镀期间，封闭门10均保持封闭，以保持蒸镀腔室1内的真空环境。应当理解的是，蒸镀腔室1还可以配备有本领域技术人员已知的抽真空装置或压力缓冲间，以蒸镀腔室1内保持稳定的真空状态。
如图1所示，所述隔离单元3能够打开和/或关闭，以使相邻的蒸镀子腔室2相通。在所述隔离单元3打开时，所述待蒸镀基板11可以通过所述隔离单元3从一个蒸镀子腔室2移动到相通的另一个蒸镀子腔室2。在所述隔离单元3关闭时，所述蒸镀子腔室2可以被隔离开。隔离单元3可以防止蒸发源4在对待蒸镀基板11进行蒸镀时污染相邻的蒸镀子腔室2。
优选的是，所述隔离单元3可以由上隔板31和下隔板32组成。当所述隔离单元3关闭以将相邻的蒸镀子腔室2隔离开时，所述上隔板31和所述下隔板32形成重叠部分。容易想到的是，上隔板31和下隔板32可以通过现有技术中已知的驱动装置(未示出)在竖直方向上移动，以打开和/或关闭隔离单元3。
如图1和图2所示，优选的是，所述蒸镀子腔室2包括能够遮挡所述蒸发源4的遮挡单元8。遮挡单元8可以遮挡未被使用 的蒸发源4，以防止蒸镀物质扩散到不期望的位置。
优选的是，所述遮挡单元8包括：固定板82，所述固定板82与所述蒸镀子腔室2的一侧的隔离单元3连接；遮挡板83，所述遮挡板83能够遮挡所述蒸发源4；以及传动轴81，所述传动轴81用于连接所述固定板82与所述遮挡板83并且能够驱动所述遮挡板83移动。
例如，遮挡单元8的固定板82可以固定到下隔板32上。在不影响上隔板31移动的前提下，传动轴81可以相对于固定板82移动，而遮挡板83可以相对于传动轴81转动。当需要遮挡蒸发源4时，遮挡板83通过转动轴81而覆盖在蒸发源4上方；当不需要遮挡蒸发源4时，遮挡板83通过传动轴81移动至固定板82附近并与固定板82平行放置。这样，可以节省空间并减少对蒸镀的影响。
如图3和图4所示，优选的是，所述传送单元5包括用于吸附待蒸镀基板11的磁隔板51，并且所述磁隔板51能够使待蒸镀基板11在所述多个蒸镀子腔室2之间水平移动或者在所述蒸镀子腔室2中竖直移动。
按照这种方式，待蒸镀基板11能够通过磁隔板51在蒸镀腔室1内移动，以便能够与掩模板单元6进行对位。本领域技术人员容易理解的是，例如，上述磁隔板51通电产生的磁场可以用来吸附待蒸镀基板11。
如图3和图4所示，优选的是，所述传送单元5还包括多个支撑装置52，用于辅助所述磁隔板51固定并移动所述待蒸镀基板11；并且所述支撑装置52设置在所述磁隔板51的相对两侧，以便支撑所述待蒸镀基板11。
按照这种方式，可以防止待蒸镀基板11在移动过程中掉落。另外，当待蒸镀基板11与掩膜板单元6对位后，所述支撑装置52与待蒸镀基板11脱离，从而使待蒸镀基板11能够与掩膜板61贴合以进行蒸镀。
如图5、图6、图7所示，优选的是，所述蒸镀腔室1还包 括：设置在所述蒸发源4和所述传送单元5之间的掩膜板单元6，用于使蒸发源4的物质选择性透过，以便在所述待蒸镀基板11上形成蒸镀图案。所述掩膜板单元6通过支撑杆7设置在所述传送单元5的与蒸发源4相对的一侧。
本发明的实施例中，掩膜板单元6位于各蒸镀子腔室2的上方并通过支撑杆7固定。此外，进入蒸镀子腔室2的待蒸镀基板11与掩膜板61进行对位。应当理解的是，支撑杆7和传送单元5可以共同配合完成待蒸镀基板11完成与掩膜板61的对位。例如，待蒸镀基板11和掩膜板61可以设有定位孔，通过摄像头检查定位孔的对位情况判断是否完成对位。应当理解的是，可以采用本领域技术人员已知的任何对位方式。
优选的是，所述掩膜板单元6包括掩膜板61和与所述掩膜板61的朝向所述蒸发源4一侧接触的冷却板62，所述冷却板62用于冷却掩膜板61和待蒸镀基板11。
优选的是，冷却板62具有使所述掩膜板61的图案部分暴露的开口；上述冷却板62内可以含有冷却循环水，以便吸收蒸发源4的辐射热量，从而防止掩膜板61和与所述掩膜板61贴合的待蒸镀基板11在蒸镀时受热而发生变形或产生其它不良。
优选的是，所述蒸镀腔室1还包括驱动单元(未示出)，所述驱动单元用于驱动所述传送单元5运动，从而使携带有待蒸镀基板11的传送单元5沿着图1和图8中的箭头方向在各个蒸镀子腔室2之间传送。
应当理解的，驱动单元可以是本领域技术人员已知的并且包括电机，传动轴等部件，只要能够与传动单元连接并能控制传动单元在蒸镀腔室1中在垂直和水平方向上运动即可。
优选的是，所述驱动单元与所述磁隔板51的主轴9连接，用于驱动述磁隔板51运动。所述主轴9与驱动单元连接，从而驱动磁隔板51在蒸镀腔室1中沿着垂直方向和水平方向运动。应当理解的是，也可以采用其它方式使所述驱动单元与所述磁隔板51连接。
下面将描述根据本发明实施例的蒸镀装置的工作过程：
步骤1：进料
将蒸镀腔室1抽真空并维持真空状态。打开蒸镀腔室1进口端的密封门10。在图1中最左侧的第一蒸镀子腔室2的左侧隔离单元3打开，使承载着待蒸镀基板11的传送单元5进入最左侧的第一蒸镀子腔室2。然后，在将进口端的密封门10关闭的同时，将隔离单元3以使第一蒸镀子腔室2封闭。
步骤2：对位
将传送单元5所承载的待蒸镀基板11与支撑杆7所支撑的掩膜单元6进行对位。具体地说，通过主轴9的驱动使磁隔板51在蒸镀子腔室2内移动，同时通过摄像单元检测待蒸镀基板11和掩膜单元6的定位孔并判断是否完成对位。在对位的情况下，支撑装置2脱离待蒸镀基板11，使待蒸镀基板11与掩膜板61贴合。
步骤3：蒸镀
在完成对位后，移开蒸发源4上方的遮挡单元8。具体地说，通过传动轴81使位于蒸发源4上方的遮挡板83移动到固定板82的一侧。然后，蒸发源4向位于上侧的待蒸镀基板11进行蒸镀，蒸镀物质通过掩膜板61在待蒸镀基板11形成蒸镀图案。
步骤4：移动至下一蒸镀子腔室
在蒸镀完毕后，用遮挡板83遮挡蒸发源4。然后，蒸镀子腔室2的右侧隔离单元3打开，驱动单元通过驱动传送单元5使待蒸镀基板11转移至下一个蒸镀子腔室。接着，重复步骤2、3直至完成蒸镀的基板从蒸镀腔室1的出口端的排出。
上述的过程只是对单个蒸镀基板进行蒸镀的描述。应当理解的是，如图8所示，本发明的实施例可以在多个蒸镀子腔室2内对多个待蒸镀基板11进行蒸镀。在这种情况下，每个蒸镀子腔室2的遮挡单元8、传送单元5、隔离单元3均能单独控制完成各个待蒸镀基板11的蒸镀。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

  1. 一种蒸镀装置，包括用于对待蒸镀基板进行蒸镀的蒸镀腔室，其特征在于，所述的蒸镀腔室包括：
    多个隔离单元所述多个隔离单元将所述蒸镀腔室划分成多个蒸镀子腔室；
    多个蒸发源，所述多个蒸发源分别位于所述多个蒸镀子腔室中；以及
    传送单元，所述传送单元与所述蒸发源相对设置并且用于使所述待蒸镀基板在所述多个蒸镀子腔室之间移动。
  2. 如权利要求1所述的蒸镀装置，其特征在于，
    所述隔离单元能够打开和/或关闭，以使相邻的蒸镀子腔室相通；
    在所述隔离单元打开时，所述待蒸镀基板能够通过所述隔离单元从一个蒸镀子腔室移动到相通的另一个蒸镀子腔室；并且
    在所述隔离单元关闭时，所述蒸镀子腔室被隔离开。
  3. 如权利要求2所述的蒸镀装置，其特征在于，
    所述隔离单元由上隔板和下隔板组成；并且
    当所述隔离单元关闭以将相邻的蒸镀子腔室隔离开时，所述上隔板和所述下隔板形成重叠部分。
  4. 如权利要求1所述的蒸镀装置，其特征在于，
    所述传送单元包括用于吸附所述待蒸镀基板的磁隔板；并且
    所述磁隔板能够使所述待蒸镀基板在所述多个蒸镀子腔室之间水平移动，或者在所述蒸镀子腔室中竖直移动。
  5. 如权利要求4所述的蒸镀装置，其特征在于，
    所述传送单元还包括多个支撑装置，用于辅助所述磁隔板固 定并移动所述待蒸镀基板；并且
    所述支撑装置设置在所述磁隔板的相对两侧，以便支撑所述待蒸镀基板。
  6. 如权利要求1所述的蒸镀装置，其特征在于，
    所述蒸镀腔室还包括：设置在所述蒸发源和所述传送单元之间的掩膜板单元，用于使蒸发源的物质选择性透过，以便在所述待蒸镀基板上形成蒸镀图案；并且
    所述掩膜板单元通过支撑杆设置在所述传送单元的与所述蒸发源相对的一侧。
  7. 如权利要求6所述的蒸镀装置，其特征在于，
    所述掩膜板单元包括掩膜板和与所述掩膜板的朝向所述蒸发源一侧接触的冷却板，所述冷却板用于冷却掩膜板和待蒸镀基板。
  8. 如权利要求7所述的蒸镀装置，其特征在于，
    所述的冷却板具有使所述掩膜板的图案部分暴露的开口。
  9. 如权利要求3所述的蒸镀装置，其特征在于，
    所述蒸镀子腔室包括能够遮挡所述蒸发源的遮挡单元。
  10. 如权利要求9所述的蒸镀装置，其特征在于，
    所述遮挡单元包括：固定板，所述固定板与所述蒸镀子腔室的一侧的所述隔离单元连接；遮挡板，所述遮挡板能够遮挡所述蒸发源；以及传动轴，所述传动轴用于连接所述固定板与所述遮挡板并且能够驱动所述遮挡板移动。
  11. 如权利要求4所述的蒸镀装置，其特征在于，
    所述蒸镀腔室还包括驱动单元，所述驱动单元用于驱动所述 传送单元运动。
  12. 如权利要求11所述的蒸镀装置，其特征在于，
    所述驱动单元与所述磁隔板的主轴连接，用于驱动述磁隔板运动。
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US20100224481A1 (en) * 2009-03-06 2010-09-09 Applied Materials, Inc. Gas flow set-up for multiple, interacting reactive sputter sources
CN104726827A (zh) * 2015-04-10 2015-06-24 京东方科技集团股份有限公司 一种蒸镀装置

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