WO2016152919A1

WO2016152919A1 - Semiconductor processing tape

Info

Publication number: WO2016152919A1
Application number: PCT/JP2016/059203
Authority: WO
Inventors: 佐野　透; 二朗杉山; 真沙美青山
Original assignee: 古河電気工業株式会社
Priority date: 2015-03-24
Filing date: 2016-03-23
Publication date: 2016-09-29
Also published as: SG11201706197VA; TW201700671A; CN107408501B; CN107408501A; KR20170117199A; KR101894690B1; TWI697539B; MY192661A; JPWO2016152919A1; JP6097893B2

Abstract

[Problem] To provide a semiconductor processing tape which has excellent pick-up properties and in which the thermal shrinkage rate in a tape shrinkage process is low, wrinkles do not occur, and kerf width extends sufficiently without displacement of chip position. [Solution] Provided is a semiconductor processing tape that is characterized by having an adhesive tape that is provided with a substrate film and an adhesive layer formed on at least one surface side of the substrate film, wherein in a process for fragmenting an adhesive by expansion, the relationship between the stress on only the substrate and the stress on the adhesive tape when the adhesive tape is subjected to a tensile elongation of 10% according to a method set forth in JIS7162 is: stress on adhesive tape/stress on only substrate = 1 or less.

Description

Semiconductor processing tape

The present invention relates to a semiconductor processing tape excellent in pickup properties.

Conventionally, in the manufacturing process of a semiconductor device such as an integrated circuit (IC: Integrated Circuit), a back grinding process for grinding the back surface of the wafer in order to thin the wafer after forming the circuit pattern, and adhesive and stretchable on the back surface of the wafer. After pasting a certain semiconductor processing tape, a dicing process for dividing the wafer into chips, an expanding process for expanding the semiconductor processing tape, a pickup process for picking up the divided chips, and a picked-up chip A die bonding (mounting) step of bonding to a lead frame or a package substrate (or stacking and bonding chips in a stacked package) is performed.

In the back grinding process, a surface protective tape is used to protect the circuit pattern forming surface (wafer surface) of the wafer from contamination. When this surface protection tape is peeled off from the wafer surface after the backside grinding of the wafer is completed, the semiconductor processing tape (dicing / die bonding tape) described below is bonded to the backside of the wafer and then applied to the suction table for semiconductor processing. The tape side is fixed, the surface protective tape is subjected to a treatment for reducing the adhesive strength to the wafer, and then the surface protective tape is peeled off. The wafer from which the surface protection tape has been peeled is then picked up from the suction table with the semiconductor processing tape bonded to the back surface, and subjected to the next dicing process. In addition, when the surface protection tape is made of an energy ray curable component such as ultraviolet rays, the treatment for reducing the adhesive force is an energy ray irradiation treatment, and when the surface protection tape is made of a thermosetting component, Heat treatment.

In the dicing process to the mounting process after the back grinding process, a semiconductor processing tape in which an adhesive layer and an adhesive layer are laminated in this order on a base film is used. In general, when using such a tape for semiconductor processing, first, an adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer to fix the wafer, and the wafer and the adhesive layer are chipped using a dicing blade. Dicing into units. Thereafter, an expanding process is performed to expand the distance between the chips by expanding the tape in the radial direction of the wafer. This expanding process is performed in the subsequent pick-up process in order to improve chip recognition by a CCD camera or the like and to prevent chip breakage caused by contact between adjacent chips when picking up a chip. The Thereafter, the chip is peeled off from the adhesive layer together with the adhesive layer in the pickup process and picked up, and directly attached to the lead frame, the package substrate, etc. in the mounting process. In this way, by using a semiconductor processing tape, it is possible to directly bond a chip with an adhesive layer to a lead frame, a package substrate, etc., so an adhesive coating process or separate die bonding to each chip The step of adhering the film can be omitted.

However, in the dicing step, as described above, the wafer and the adhesive layer are diced together using the dicing blade, and therefore not only the wafer cutting waste but also the adhesive layer cutting waste is generated. Then, when the cutting waste of the adhesive layer is clogged in the dicing groove of the wafer, there is a problem that chips are stuck to each other to cause a pickup failure and the manufacturing yield of the semiconductor device is lowered.

In order to solve such problems, a method has been proposed in which only the wafer is diced with a blade in the dicing process, and the semiconductor processing tape is expanded in the expanding process to divide the adhesive layer into individual chips. (For example, Patent Document 1). According to such a method for dividing the adhesive layer using the tension at the time of expansion, no cutting waste of the adhesive is generated, and there is no adverse effect in the pickup process.

In recent years, a so-called stealth dicing method that can cut a wafer in a non-contact manner using a laser processing apparatus has been proposed as a wafer cutting method. For example, in Patent Document 2, as a stealth dicing method, an adhesive layer (die bond resin layer) is interposed, a focus light is adjusted inside a semiconductor substrate to which a sheet is attached, and laser light is irradiated. Forming a modified region by multiphoton absorption inside the semiconductor substrate, cutting the modified region into the planned cutting part, and expanding the sheet to cut the semiconductor substrate and the adhesive layer along the planned cutting part A method for cutting a semiconductor substrate comprising the steps of:

Further, as another wafer cutting method using a laser processing apparatus, for example, Patent Document 3 discloses a process of attaching an adhesive layer (adhesive film) for die bonding to the back surface of a wafer, and the adhesive layer includes The process of pasting a stretchable protective adhesive tape on the adhesive layer side of the bonded wafer, and irradiating laser light along the street from the surface of the wafer to which the protective adhesive tape was bonded to each chip The process of dividing, the process of expanding the protective adhesive tape to give tensile force to the adhesive layer, breaking the adhesive layer for each chip, and protecting the chip to which the broken adhesive layer is bonded A wafer dividing method including a step of separating from a tape has been proposed.

According to the wafer cutting methods described in Patent Document 2 and Patent Document 3, since the wafer is cut in a non-contact manner by laser light irradiation and tape expansion, the physical load on the wafer is small and the current mainstream. The wafer can be cut without generating wafer chipping (chipping) as in blade dicing. Further, since the adhesive layer is divided by the expansion, cutting waste of the adhesive layer is not generated. For this reason, it attracts attention as an excellent technique that can replace blade dicing.

Furthermore, in Patent Document 4, in order to prevent the interval between individual chips from being stably held due to loosening after expansion, the tape is heated and contracted and tensioned after the dividing step, and the interval between the chips (hereinafter, “ A method of maintaining the kerf width ") has been proposed.

JP 2007-5530 A JP 2003-338467 A JP 2004-273895 A JP 2011-216508 A

On the other hand, in the shrinking process, the expansion of the kerf width cannot be maintained, and there is a problem that a trouble occurs in the pick-up process because the adhesive layer is reattached.

The present invention provides a semiconductor processing tape excellent in pick-up performance in which the kerf width is sufficiently expanded without shifting the chip position in the tape shrinking process.

That is, the present invention has a pressure-sensitive adhesive tape comprising a base film and a pressure-sensitive adhesive layer formed on at least one side of the base film. In the step of dividing the adhesive by expanding, the pressure-sensitive adhesive tape is JIS 7162. The relationship between the stress of the base material alone and the stress of the adhesive tape when the tensile elongation is 10% is determined by the prescribed method.
It is related with the tape for semiconductor processing characterized by the following. Stress of adhesive tape / Stress of base material only = 1 or less.

The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam to a portion to be divided of the wafer, and forming a modified region by multiphoton absorption inside the wafer;
(F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process,
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape, and a method for manufacturing a semiconductor device, comprising: About.

The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam along a cutting line on the wafer surface, and cutting the wafer into chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape, and a method for manufacturing a semiconductor device, comprising: About.

The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) cutting the wafer along a cutting line using a dicing blade and cutting the wafer into chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape, and a method for manufacturing a semiconductor device, comprising: About.

The semiconductor processing tape is
(A) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and cutting the wafer to a depth less than the thickness of the wafer along a planned cutting line using a dicing blade;
(B) bonding a surface protective tape to the wafer surface;
(C) a back grinding process in which the dicing tape is peeled off and the back surface of the wafer is ground and divided into chips;
(D) A step of bonding an adhesive layer of the semiconductor processing tape to the back surface of the wafer divided into the chips while the wafer is heated;
(E) peeling the surface protection tape from the wafer surface divided into the chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) In the semiconductor processing tape after expansion, removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip, and maintaining the interval between the chips;
(H) a step of picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape, and a method for manufacturing a semiconductor device, comprising: .

The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding process for grinding the back surface of the wafer;
(D) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(E) peeling the surface protection tape from the wafer surface;
(F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process,
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the pressure-sensitive adhesive layer of the semiconductor processing tape, and a method for manufacturing a semiconductor device, comprising: About.

Furthermore, the present invention relates to a semiconductor device using the semiconductor processing tape.

By using the semiconductor processing tape provided by the invention of the present application, the kerf width is expanded uniformly without changing, so that a highly reliable semiconductor device that does not cause a chip position shift and does not cause a pickup failure is obtained. Obtainable.

It is sectional drawing which shows typically the structure of the tape for semiconductor processing which concerns on embodiment of this invention. It is sectional drawing which shows the state by which the surface protection tape was bonded by the wafer. It is sectional drawing for demonstrating the process of bonding a wafer and a ring frame to the tape for semiconductor processing which concerns on embodiment of this invention. It is sectional drawing explaining the process of peeling a surface protection tape from the surface of a wafer. It is sectional drawing which shows a mode that the modification | reformation area | region was formed in the wafer by laser processing. (A) It is sectional drawing which shows the state with which the tape for semiconductor processing which concerns on embodiment of this invention was mounted in the expand apparatus. (B) It is sectional drawing which shows the process in which a wafer is divided | segmented into a chip | tip by expansion of the tape for semiconductor processing. (C) It is sectional drawing which shows the tape for semiconductor processing after expansion, an adhesive bond layer, and a chip | tip. It is sectional drawing for demonstrating a heat shrink process.

<Tape for semiconductor processing>
FIG. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention. In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 is divided along the chip when the wafer is divided into chips by the expand. This semiconductor processing tape 10 has a pressure-sensitive adhesive tape 15 composed of a base film 11 and a pressure-sensitive adhesive layer 12 provided on the base film 11, and an adhesive layer 13 provided on the pressure-sensitive adhesive layer 12. Then, the back surface of the wafer is bonded onto the adhesive layer 13. Each layer may be cut (precut) into a predetermined shape in advance according to the use process and the apparatus. Further, the semiconductor processing tape 10 of the present invention may be in a form cut for each wafer, or a long sheet formed by cutting a plurality of wafers for each wafer, The form wound up in roll shape may be sufficient.

The tape for semiconductor processing of the present invention has a pressure-sensitive adhesive tape comprising a base film and a pressure-sensitive adhesive layer formed on at least one side of the base film, and in the step of dividing the adhesive by an expand, In the tensile test according to the method defined in JIS 7162, the relationship between the stress of only the base material when the tensile elongation is 10% and the stress of the adhesive tape is
It is necessary to satisfy the following condition: stress of adhesive tape / stress of base material only = 1 or less.

Specifically, a sample with a width of 25 mm was prepared, attached to a tensile tester so that the distance between chucks was 50 mm, and the value held for 60 seconds was measured after stretching 5 mm, that is, 10% at a speed of 100 mm / min. did.
In addition, said "stress of an adhesive tape" is the stress of what was extract | collected in the expanding process of the manufacturing method of a semiconductor device about the tape 10 for semiconductor processing of this invention.
Moreover, the above-mentioned “stress only on the base material” means the stress in the state of only the base film 11 before the adhesive layer 12 is provided on the base film 11.

By satisfying the above conditions, the kerf width is sufficiently secured, wrinkles do not occur, and the chip position does not shift, so that a significant effect can be obtained that pickup can be performed satisfactorily.
When the value of the stress of the adhesive tape / the stress of only the substrate exceeds 1, the kerf width is not sufficiently ensured or not uniform, resulting in poor pick-up properties.

There are various methods for adjusting the physical properties of the semiconductor tape within this range, but it is suitable for a method of performing an energy ray curing treatment before performing an expanding treatment, or performing a known biaxial extrusion method, a heat setting treatment, or the like. Can be adjusted.
Below, the structure of each layer of the tape for semiconductor processing is demonstrated.

<Base film>
The base film 11 is preferably uniform and isotropically expandable in that the wafer can be cut without deviation in all directions in the expanding process, and the material is not particularly limited. In general, the cross-linked resin has a greater restoring force against tension than the non-cross-linked resin, and has a large shrinkage stress when heat is applied to the stretched state after the expanding step. Therefore, it is excellent in the heat shrink process in which the slack generated in the tape after the expanding process is removed by heat shrinkage and the tape is tensioned to keep the interval between the individual chips stable. Among the crosslinked resins, thermoplastic crosslinked resins are more preferably used. On the other hand, the non-crosslinked resin has a low restoring force against tension compared to the crosslinked resin. Therefore, after the expansion process in a low temperature region such as −15 ° C. to 0 ° C., it is once relaxed and returned to room temperature, and the tape is difficult to shrink when going to the pick-up process and the mounting process, so that it adheres to the chip. It is excellent in that the adhesive layers can be prevented from contacting each other. Of the non-crosslinked resins, olefinic non-crosslinked resins are more preferably used.

Examples of such a thermoplastic crosslinked resin include ethylene- (meth) acrylic acid binary copolymer or ethylene- (meth) acrylic acid- (meth) acrylic acid alkyl ester as a main polymer constituent. An ionomer resin obtained by crosslinking the original copolymer with a metal ion is exemplified. These are particularly suitable in that they are suitable for the expanding process in terms of uniform expansibility and have a strong restoring force when heated by crosslinking. The metal ion contained in the ionomer resin is not particularly limited, and examples thereof include zinc and sodium. Zinc ions are preferable from the viewpoint of low elution and low contamination. In the (meth) acrylic acid alkyl ester of the terpolymer, the alkyl group having 1 to 4 carbon atoms preferably has a high elastic modulus and can transmit a strong force to the wafer. Examples of such (meth) acrylic acid alkyl esters include methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate. Can be mentioned.

As the above-mentioned thermoplastic crosslinked resin, in addition to the above-mentioned ionomer resin, a low density polyethylene having a specific gravity of 0.910 to less than 0.930, an ultra low density polyethylene having a specific gravity of less than 0.910, and ethylene-acetic acid. A resin selected from vinyl copolymers is also preferably crosslinked by irradiating an energy beam such as an electron beam. Such a thermoplastic cross-linked resin has a certain uniform expansibility since a cross-linked site and a non-cross-linked site coexist in the resin. In addition, since a strong restoring force works during heating, it is also suitable for removing tape slack generated in the expanding process, and since it contains almost no chlorine in the structure of the molecular chain, a tape that has become unnecessary after use can be removed. Even if incinerated, dioxins and their analogs do not generate chlorinated aromatic hydrocarbons, so the environmental impact is small. By appropriately adjusting the amount of energy rays applied to the polyethylene and ethylene-vinyl acetate copolymer, a resin having sufficient uniform expandability can be obtained.

As the non-crosslinked resin, for example, a mixed resin composition of polypropylene and a styrene-butadiene copolymer is exemplified.

As the polypropylene, for example, a homopolymer of propylene or a block type or random type propylene-ethylene copolymer can be used. Random type propylene-ethylene copolymers are preferred because of their low rigidity. When the content of the ethylene structural unit in the propylene-ethylene copolymer is 0.1% by weight or more, it is excellent in that the rigidity of the tape and the compatibility between the resins in the mixed resin composition are high. When the rigidity of the tape is appropriate, the cutting property of the wafer is improved, and when the compatibility between the resins is high, the extrusion discharge amount is easily stabilized. More preferably, it is 1% by weight or more. Further, when the content of the ethylene structural unit in the propylene-ethylene copolymer is 7% by weight or less, it is excellent in that the polypropylene is stably and easily polymerized. More preferably, it is 5% by weight or less.

As the styrene-butadiene copolymer, a hydrogenated one may be used. When the styrene-butadiene copolymer is hydrogenated, it has good compatibility with propylene and can prevent embrittlement and discoloration due to oxidative degradation due to double bonds in butadiene. Further, it is preferable that the content of the styrene structural unit in the styrene-butadiene copolymer is 5% by weight or more from the viewpoint that the styrene-butadiene copolymer is stable and easily polymerized. Moreover, if it is 40 weight% or less, it is flexible and excellent in terms of expandability. More preferably, it is 25 weight% or less, More preferably, it is 15 weight% or less. As the styrene-butadiene copolymer, either a block-type copolymer or a random-type copolymer can be used. The random copolymer is preferable because the styrene phase is uniformly dispersed, the rigidity is prevented from being excessively increased, and the expandability is improved.

When the content of polypropylene in the mixed resin composition is 30% by weight or more, it is excellent in that the thickness unevenness of the base film can be suppressed. If the thickness is uniform, the extensibility tends to be isotropic, the stress relaxation property of the base film becomes too large, the distance between the chips becomes smaller with time, and the adhesive layers come into contact with each other and remelt. Easy to prevent wearing. More preferably, it is 50 weight% or more. Moreover, it is easy to adjust the rigidity of a base film suitably as the content rate of a polypropylene is 90 weight% or less. If the rigidity of the base film becomes too large, the force required to expand the base film becomes large, which increases the load on the apparatus and makes it impossible to expand the wafer and the adhesive layer 13 enough to divide. Therefore, it is important to adjust appropriately. The lower limit of the content of the styrene-butadiene copolymer in the composite resin composition is preferably 10% by weight or more, and it is easy to adjust the rigidity of the base film suitable for the apparatus. An upper limit of 70% by weight or less is excellent in that thickness unevenness can be suppressed, and 50% by weight or less is more preferable.

In the example shown in FIG. 1, the base film 11 is a single layer, but is not limited to this, and may have a multilayer structure in which two or more kinds of resins are laminated, or one kind of resin. Two or more layers may be laminated. Two or more kinds of resins are preferable from the viewpoint of expressing each characteristic more enhanced if the crosslinkability or noncrosslinkability is unified, and each of them when laminated with a combination of crosslinkability or noncrosslinkability. It is preferable in that the above disadvantage is compensated. The thickness of the base film 11 is not particularly defined, but it is sufficient that the base film 11 has sufficient strength to be easily stretched and not broken in the expanding process of the semiconductor processing tape 10. For example, the thickness is preferably about 50 to 300 μm, and more preferably 70 μm to 200 μm. Moreover, it is preferable that the base film 11 contains crystalline resin.

As a method for producing the multi-layer base film 11, a conventionally known extrusion method, laminating method, or the like can be used. When the laminating method is used, an adhesive may be interposed between the layers. A conventionally well-known adhesive agent can be used as an adhesive agent.

<Adhesive layer>
The pressure-sensitive adhesive layer 12 can be formed by applying a pressure-sensitive adhesive composition to the base film 11.
The pressure-sensitive adhesive layer 12 constituting the semiconductor processing tape 10 of the present invention has a holding property that does not cause separation from the adhesive layer 13 at the time of dicing and does not cause defects such as chip jumping, and an adhesive at the time of pickup. Any material may be used as long as it can be easily separated from the layer 13.

In the semiconductor processing tape 10 of the present invention, the structure of the pressure-sensitive adhesive composition constituting the pressure-sensitive adhesive layer 12 is not particularly limited, but in order to improve the pick-up property after dicing, an energy ray-curable material is preferable and cured. It is preferable that the material be easily peelable from the adhesive layer 13 later. As one embodiment, the pressure-sensitive adhesive composition contains 60 mol% or more of (meth) acrylate having an alkyl chain having 6 to 12 carbon atoms as a base resin, and has an iodine value of 5 to 30. The thing which has a polymer (A) which has a carbon-carbon double bond is illustrated. Here, the energy ray means a light ray such as ultraviolet rays or ionizing radiation such as an electron beam.

In such a polymer (A), when the amount of energy ray-curable carbon-carbon double bond introduced is 5 or more in terms of iodine value, it is excellent in that the effect of reducing the adhesive strength after irradiation with energy rays is enhanced. More preferably, it is 10 or more. Moreover, when the iodine value is 30 or less, the holding power of the chip until it is picked up after irradiation with energy rays is high, and it is excellent in that it is easy to widen the chip gap at the time of expansion immediately before the picking process. It is preferable that the gap between the chips can be sufficiently widened before the pick-up process because image recognition of each chip at the time of pick-up is easy or pick-up becomes easy. Further, it is preferable that the amount of carbon-carbon double bonds introduced is an iodine value of 5 or more and 30 or less because the polymer (A) itself is stable and easy to produce.

Furthermore, the polymer (A) has a glass transition temperature of −70 ° C. or higher in terms of heat resistance against heat accompanying energy beam irradiation, more preferably −66 ° C. or higher. Further, if it is 15 ° C. or lower, it is excellent in the effect of preventing scattering of chips after dicing on a wafer having a rough surface state, more preferably 0 ° C. or lower, and further preferably −28 ° C. or lower.

The polymer (A) may be produced by any method, for example, a polymer obtained by mixing an acrylic copolymer and a compound having an energy ray-curable carbon-carbon double bond, An acrylic copolymer having a functional group or a methacrylic copolymer having a functional group (A1), a functional group capable of reacting with the functional group, and an energy ray-curable carbon-carbon double bond What is obtained by reacting with a compound (A2) having a hydrogen atom is used.

Among these, as the methacrylic copolymer (A1) having the above functional group, a monomer (A1-1) having a carbon-carbon double bond such as an alkyl acrylate ester or an alkyl methacrylate ester, and carbon Examples thereof include those obtained by copolymerizing a monomer (A1-2) having a carbon double bond and having a functional group. Examples of the monomer (A1-1) include hexyl acrylate, n-octyl acrylate, isooctyl acrylate, 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, or alkyl chain carbon having an alkyl chain having 6 to 12 carbon atoms. Mention may be made of pentyl acrylate, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate, or similar methacrylates, which are monomers having a number of 5 or less.

In addition, a component having 6 or more carbon atoms in the alkyl chain in the monomer (A1-1) is excellent in pick-up property because it can reduce the peeling force between the pressure-sensitive adhesive layer and the adhesive layer. In addition, a component of 12 or less has a low elastic modulus at room temperature and is excellent in terms of the adhesive force at the interface between the pressure-sensitive adhesive layer and the adhesive layer. When the adhesive force at the interface between the pressure-sensitive adhesive layer and the adhesive layer is high, when the wafer is cut by expanding the tape, the interface shift between the pressure-sensitive adhesive layer and the adhesive layer can be suppressed, and the cutting performance is improved. Therefore, it is preferable.

Further, as the monomer (A1-1) is used, the glass transition temperature becomes lower as the monomer having a larger alkyl chain carbon number is used. Therefore, the pressure-sensitive adhesive composition having a desired glass transition temperature can be selected appropriately. Product can be prepared. In addition to the glass transition temperature, a low molecular compound having a carbon-carbon double bond such as vinyl acetate, styrene or acrylonitrile can be added for the purpose of improving various properties such as compatibility. In that case, these low molecular weight compounds are blended within a range of 5% by mass or less of the total mass of the monomer (A1-1).

On the other hand, examples of the functional group of the monomer (A1-2) include a carboxyl group, a hydroxyl group, an amino group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group. The monomer (A1-2) Specific examples of acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycol monoacrylates, glycol monomethacrylates, N -Methylolacrylamide, N-methylolmethacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, itaconic anhydride, fumaric anhydride, phthalic anhydride Acid, glycidyl Relate, glycidyl methacrylate, it is possible to enumerate and allyl glycidyl ether.

Furthermore, in the compound (A2), examples of the functional group used include a hydroxyl group, an epoxy group, and an isocyanate group when the functional group of the compound (A1) is a carboxyl group or a cyclic acid anhydride group. In the case of a hydroxyl group, a cyclic acid anhydride group, an isocyanate group, and the like can be exemplified. In the case of an amino group, an epoxy group, an isocyanate group, and the like can be exemplified. , Carboxyl groups, cyclic acid anhydride groups, amino groups, and the like, and specific examples include those similar to those listed in the specific examples of the monomer (A1-2). As the compound (A2), a compound obtained by urethanizing a part of the isocyanate group of the polyisocyanate compound with a monomer having a hydroxyl group or a carboxyl group and an energy ray-curable carbon-carbon double bond can also be used.

In the reaction of the compound (A1) and the compound (A2), by leaving an unreacted functional group, a desired product with respect to characteristics such as acid value or hydroxyl value can be produced. If the OH group is left so that the hydroxyl value of the polymer (A) is 5 to 100, the risk of pick-up mistakes can be further reduced by reducing the adhesive strength after irradiation with energy rays.
Further, if the COOH group is left so that the acid value of the polymer (A) is 0.5 to 30, an improvement effect after restoration of the pressure-sensitive adhesive layer after expanding the semiconductor processing tape of the present invention is obtained. And preferred. When the hydroxyl value of the polymer (A) is 5 or more, it is excellent in terms of the effect of reducing the adhesive strength after irradiation with energy rays, and when it is 100 or less, it is excellent in terms of fluidity of the adhesive after irradiation with energy rays. . Moreover, when the acid value is 0.5 or more, it is excellent in terms of tape recoverability, and when it is 30 or less, it is excellent in terms of fluidity of the pressure-sensitive adhesive.

In the synthesis of the above polymer (A), as the organic solvent when the reaction is carried out by solution polymerization, ketone-based, ester-based, alcohol-based and aromatic-based solvents can be used, among which toluene, acetic acid Generally good solvents for acrylic polymers, such as ethyl, isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone, and preferably a solvent having a boiling point of 60 to 120 ° C. The polymerization initiator is α, α′-azobis. A radical generator such as an azobis type such as isobutyl nitrile or an organic peroxide type such as benzoyl peroxide is usually used. At this time, if necessary, a catalyst and a polymerization inhibitor can be used in combination, and the polymer (A) having a desired molecular weight can be obtained by adjusting the polymerization temperature and the polymerization time. For controlling the molecular weight, it is preferable to use a known solvent such as mercaptan or carbon tetrachloride or a chain transfer agent. This reaction is not limited to solution polymerization, and may be another method such as bulk polymerization or suspension polymerization.

As described above, the polymer (A) can be obtained, but in the present invention, when the molecular weight of the polymer (A) is 300,000 or more, it is excellent in that the cohesive force can be increased. When the cohesive force is high, there is an effect of suppressing displacement at the interface with the adhesive layer at the time of expanding, and since the tensile force is easily transmitted to the adhesive layer, the splitting property of the adhesive layer is improved. Is preferable. When the molecular weight of the polymer (A) is 2 million or less, it is excellent in terms of suppressing gelation at the time of synthesis and coating. In addition, the molecular weight in this invention is a mass mean molecular weight of polystyrene conversion.

Moreover, in the semiconductor processing tape 10 of the present invention, the resin composition constituting the pressure-sensitive adhesive layer 12 may further contain a compound (B) that acts as a crosslinking agent in addition to the polymer (A). Good. Examples thereof include polyisocyanates, melamine / formaldehyde resins, and epoxy resins, and these can be used alone or in combination of two or more. This compound (B) reacts with the polymer (A) or the base film, and as a result, a pressure-sensitive adhesive mainly composed of the polymers (A) and (B) after coating the pressure-sensitive adhesive composition due to the resulting crosslinked structure. The cohesive strength of can be improved.

The polyisocyanates are not particularly limited, and examples thereof include 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4 '-[2,2-bis (4 -Phenoxyphenyl) propane] aromatic isocyanate such as diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate Lysine diisocyanate, lysine triisocyanate, and the like. Specifically, Coronate L (trade name, manufactured by Nippon Polyurethane Co., Ltd.) and the like are used. It can be. Specific examples of the melamine / formaldehyde resin include Nicalac MX-45 (trade name, manufactured by Sanwa Chemical Co., Ltd.) and Melan (trade name, manufactured by Hitachi Chemical Co., Ltd.). As the epoxy resin, TETRAD-X (trade name, manufactured by Mitsubishi Chemical Corporation) or the like can be used. In the present invention, it is particularly preferable to use polyisocyanates.

The pressure-sensitive adhesive layer in which the amount of the compound (B) added is 0.1 parts by mass or more with respect to 100 parts by mass of the polymer (A) is excellent in terms of cohesive force. More preferably, it is 0.5 mass part or more. The pressure-sensitive adhesive layer having a content of 15 parts by mass or less is excellent in terms of rapid suppression of gelation at the time of coating, and the workability of the pressure-sensitive adhesive blending and coating is good. More preferably, it is 5 parts by mass or less.

In the present invention, the pressure-sensitive adhesive layer 12 may contain a photopolymerization initiator (C). There is no restriction | limiting in particular in the photoinitiator (C) contained in the adhesive layer 12, A conventionally well-known thing can be used. For example, benzophenones such as benzophenone, 4,4′-dimethylaminobenzophenone, 4,4′-diethylaminobenzophenone, 4,4′-dichlorobenzophenone, acetophenones such as acetophenone and diethoxyacetophenone, 2-ethylanthraquinone, t- And anthraquinones such as butylanthraquinone, 2-chlorothioxanthone, benzoin ethyl ether, benzoin isopropyl ether, benzyl, 2,4,5-triallylimidazole dimer (rophine dimer), acridine compounds and the like. These can be used alone or in combination of two or more. As addition amount of a photoinitiator (C), it is preferable to mix | blend 0.1 mass part or more with respect to 100 mass parts of polymers (A), and 0.5 mass part or more is more preferable. Moreover, the upper limit is preferably 10 parts by mass or less, and more preferably 5 parts by mass or less.

Further, the energy ray-curable pressure-sensitive adhesive used in the present invention may contain a tackifier, a pressure-sensitive adhesive preparation agent, a surfactant, or other modifiers as necessary. Moreover, you may add an inorganic compound filler suitably.

The pressure-sensitive adhesive layer 12 can be formed by using a conventional method for forming a pressure-sensitive adhesive layer. For example, a method of forming the pressure-sensitive adhesive composition on a predetermined surface of the base film 11 and a method of forming the pressure-sensitive adhesive composition into a separator (for example, a plastic film or sheet coated with a release agent) The adhesive layer 12 can be formed on the base film 11 by a method of transferring the adhesive layer 12 to a predetermined surface of the base material after coating on the base film 11. The pressure-sensitive adhesive layer 12 may have a single layer form or a laminated form.

The thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, but if the thickness is 2 μm or more, it is excellent in terms of tack force, and more preferably 5 μm or more. When it is 15 μm or less, the pickup property is excellent, and 10 μm or less is more preferable.

<Adhesive layer>
In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 is peeled off from the adhesive layer 12 and attached to the chip when the chip is picked up after the wafer is bonded and diced. And it is used as an adhesive agent when fixing a chip | tip to a board | substrate or a lead frame.

The adhesive layer 13 is not particularly limited, but may be any film adhesive generally used for wafers, and examples thereof include those containing a thermoplastic resin and a thermopolymerizable component. . The thermoplastic resin used for the adhesive layer 13 of the present invention is preferably a resin having thermoplasticity or a resin that has thermoplasticity in an uncured state and forms a crosslinked structure after heating, and is not particularly limited. One embodiment is a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 and a glass transition temperature of 0 to 150 ° C. Another embodiment includes a thermoplastic resin having a weight average molecular weight of 100,000 to 1,000,000 and a glass transition temperature of −50 to 20 ° C.

As the former thermoplastic resin, for example, polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyether ketone Among them, it is preferable to use a polyimide resin or a phenoxy resin, and it is preferable to use a polymer containing a functional group as the latter thermoplastic resin.

The polyimide resin can be obtained by a condensation reaction of tetracarboxylic dianhydride and diamine by a known method. That is, tetracarboxylic dianhydride and diamine are used in an organic solvent in equimolar or nearly equimolar amounts (the order of addition of each component is arbitrary), and the addition reaction is carried out at a reaction temperature of 80 ° C. or lower, preferably 0 to 60 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a polyimide precursor, is generated. The molecular weight of the polyamic acid can be adjusted by heating at a temperature of 50 to 80 ° C. for depolymerization. The polyimide resin can be obtained by dehydrating and ring-closing the reaction product (polyamic acid). The dehydration ring closure can be performed by a thermal ring closure method in which heat treatment is performed and a chemical ring closure method using a dehydrating agent.

The tetracarboxylic dianhydride used as a raw material for the polyimide resin is not particularly limited. For example, 1,2- (ethylene) bis (trimellitic anhydride), 1,3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramethylene) bis (trimellitic anhydride), 1,5- (pentamethylene) bis (trimellitic anhydride), 1,6- (hexamethylene) bis (trimellitic anhydride), 1,7- ( Heptamethylene) bis (trimellitic anhydride), 1,8- (octamethylene) bis (trimellitic anhydride), 1,9- (nonamethylene) bis (trimellitic anhydride), 1,10- (decamethylene) bis (trimellitic anhydride) Product), 1,12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexade Methylene) bis (trimellitate anhydride), 1,18- (octadecamethylene) bis (trimellitate anhydride), pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) Propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane anhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane anhydride, bis (2,3-dicarboxyphenyl) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perire Tetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ′, 4′-benzophenone Tetracarboxylic dianhydride, 2,3,2 ′, 3′-benzophenonetetracarboxylic dianhydride, 3,3,3 ′, 4′-benzophenonetetracarboxylic dianhydride, 1,2,5,6 -Naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 1,2,4,5-naphthalene Tetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride , 2, 3 , 6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6 -Tetracarboxylic dianhydride, thiophene-2,3,5,6-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4′-biphenyltetracarboxylic dianhydride, 2,3,2 ′, 3′-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4 -Dicarboxyphenyl) methylphenylsilane dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene Water, 1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-tetramethyldicyclohexane dianhydride, p-phenylene bis (trimellitate anhydride), ethylenetetracarboxylic dianhydride 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5 , 6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4, 5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic dianhydride, bicyclo -[2,2 2] -Oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-Dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4′-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2- Hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-Methyl-3-cyclohexene-1,2-dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride Etc. can be used, and these 1 type (s) or 2 or more types can also be used together.

The diamine used as a raw material for polyimide is not particularly limited, and examples thereof include o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 4 , 4′-diaminodiphenyl ether, 3,3′-diaminodiphenylmethane, 3,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylethermethane, bis (4-amino-3,5-dimethylphenyl) methane, bis (4 -Amino-3,5-diisopropylphenyl) methane, 3,3'-diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 3,3'- Diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) propane 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2- Bis (4-aminophenyl) hexafluoropropane, 1,3-bis (3-aminophenoxy) , 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 3 , 4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4 ′-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- ( 3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2,2-bis (4- (3-aminophenoxy) phenyl) hexafluoropropane, 2,2 -Bis (4- (4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- ( 4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophenoxy) phenyl) sulfone, bis (4- (4-aminophenoxy) phenyl) sulfone, aromatic diamines such as 3,5-diaminobenzoic acid, 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, , 9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-diaminocyclohexane, diaminopolysiloxane represented by the following general formula (1), 1,3 -Bis (aminomethyl) cyclohexane, Jeffermin D-230 manufactured by Sun Techno Chemical Co., Ltd. -400, D-2000, D-4000, ED-600, ED-900, ED-2001, EDR-148, and other aliphatic diamines such as polyoxyalkylene diamine can be used. Two or more kinds can be used in combination. The glass transition temperature of the polyimide resin is preferably 0 to 200 ° C., and the weight average molecular weight is preferably 10,000 to 200,000.

General formula (1)

(In the formula, R ₁ and R ₂ represent a divalent hydrocarbon group having 1 to 30 carbon atoms, which may be the same or different, and R ₃ and R ₄ represent a monovalent hydrocarbon group, Each may be the same or different, and m is an integer of 1 or more)

In addition to the above, the phenoxy resin, which is one of the preferred thermoplastic resins, is preferably a resin obtained by a method of reacting various bisphenols with epichlorohydrin or a method of reacting a liquid epoxy resin with bisphenol. Bisphenol A, bisphenol bisphenol AF, bisphenol AD, bisphenol F, and bisphenol S. The phenoxy resin is similar in structure to the epoxy resin and therefore has good compatibility with the epoxy resin and is suitable for imparting good adhesiveness to the adhesive film.

Examples of the phenoxy resin used in the present invention include a resin having a repeating unit represented by the following general formula (2).

General formula (2)

In the general formula (2), X represents a single bond or a divalent linking group. Examples of the divalent linking group include an alkylene group, a phenylene group, —O—, —S—, —SO— or —SO ₂ —. Here, the alkylene group is preferably an alkylene group having 1 to 10 carbon atoms, more preferably —C (R ₅ ) (R ₆ ) —. R ₅ and R ₆ represent a hydrogen atom or an alkyl group, and the alkyl group is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, isooctyl, 2 -Ethylhexyl, 1,3,3-trimethylbutyl and the like. The alkyl group may be substituted with a halogen atom, and examples thereof include a trifluoromethyl group. X represents an alkylene group, -O -, - S-, fluorene group or -SO ₂ - is preferably an alkylene group, -SO ₂ - is more preferred. Among them, —C (CH ₃ ) ₂ —, —CH (CH ₃ ) —, —CH ₂ —, —SO ₂ — is preferable, —C (CH ₃ ) ₂ —, —CH (CH ₃ ) —, — CH ₂ — is more preferred, and —C (CH ₃ ) ₂ — is particularly preferred.

If the phenoxy resin represented by the general formula (2) has a repeating unit, even if it is a resin having a plurality of repeating units in which X in the general formula (2) is different, X is the same repeating unit. It may consist only of. In the present invention, a resin in which X is composed of only the same repeating unit is preferable.

When the phenoxy resin represented by the general formula (2) contains a polar substituent such as a hydroxyl group or a carboxyl group, the compatibility with the thermopolymerizable component is improved and a uniform appearance and characteristics are imparted. be able to.

When the weight average molecular weight of the phenoxy resin is 5000 or more, the film forming property is excellent. More preferably, it is 10,000 or more, More preferably, it is 30,000 or more.
Moreover, it is preferable that the mass average molecular weight is 150,000 or less in terms of fluidity at the time of thermocompression bonding and compatibility with other resins. More preferably, it is 100,000 or less. Further, when the glass transition temperature is −50 ° C. or higher, the film formability is excellent, more preferably 0 ° C. or higher, and further preferably 50 ° C. or higher. When the glass transition temperature is 150 ° C., the adhesive strength of the adhesive layer 13 at the time of die bonding is excellent, more preferably 120 ° C. or less, and further preferably 110 ° C. or less.

On the other hand, examples of the functional group in the polymer containing the functional group include a glycidyl group, an acryloyl group, a methacryloyl group, a hydroxyl group, a carboxyl group, an isocyanurate group, an amino group, and an amide group. Among them, a glycidyl group is preferable. .

Examples of the high molecular weight component containing the functional group include a (meth) acrylic copolymer containing a functional group such as a glycidyl group, a hydroxyl group, or a carboxyl group.

As the (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer, acrylic rubber or the like can be used, and acrylic rubber is preferable. The acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.

When the functional group contains a glycidyl group, the amount of the glycidyl group-containing repeating unit is preferably 0.5 to 6.0% by weight, more preferably 0.5 to 5.0% by weight, and 0.8 to 5 0.0% by weight is particularly preferred. The glycidyl group-containing repeating unit is a constituent monomer of a (meth) acrylic copolymer containing a glycidyl group, and specifically, glycidyl acrylate or glycidyl methacrylate. When the amount of the glycidyl group-containing repeating unit is within this range, the adhesive force can be secured and gelation can be prevented.

Examples of the constituent monomer of the above (meth) acrylic copolymer other than glycidyl acrylate and glycidyl methacrylate include ethyl (meth) acrylate and butyl (meth) acrylate. These may be used alone or in combination of two or more. Can also be used. In the present invention, ethyl (meth) acrylate refers to ethyl acrylate and / or ethyl methacrylate. The mixing ratio in the case of using a combination of functional monomers may be determined in consideration of the glass transition temperature of the (meth) acrylic copolymer. A glass transition temperature of −50 ° C. or higher is preferred in that it is excellent in film formability and can suppress excessive tack at room temperature. If the tack force at room temperature is excessive, handling of the adhesive layer becomes difficult. More preferably, it is −20 ° C. or higher, and further preferably 0 ° C. or higher. Moreover, when the glass transition temperature is set to 30 ° C. or lower, the adhesive strength of the adhesive layer at the time of die bonding is excellent, and more preferably 20 ° C. or lower.

When a high molecular weight component containing a functional monomer is produced by polymerizing the above monomer, the polymerization method is not particularly limited, and for example, methods such as pearl polymerization and solution polymerization can be used. Is preferred.

In the present invention, when the weight average molecular weight of the high molecular weight component containing a functional monomer is 100,000 or more, it is excellent in terms of film formability, more preferably 200,000 or more, and further preferably 500,000 or more. . Moreover, when the weight average molecular weight is adjusted to 2,000,000 or less, it is excellent in that the heat fluidity of the adhesive layer at the time of die bonding is improved. Improving the heat fluidity of the adhesive layer during die bonding improves the adhesion between the adhesive layer and the adherend and improves the adhesion force. It also helps to suppress voids by filling the unevenness of the adherend. Become. More preferably, it is 1,000,000 or less, more preferably 800,000 or less, and if it is 500,000 or less, a still greater effect can be obtained.

The thermopolymerizable component is not particularly limited as long as it is polymerized by heat. For example, functional groups such as glycidyl group, acryloyl group, methacryloyl group, hydroxyl group, carboxyl group, isocyanurate group, amino group, amide group, etc. A compound having a group and a trigger material can be used, and these can be used alone or in combination of two or more. However, in consideration of heat resistance as an adhesive layer, it is cured by heat and has an adhesive action. It is preferable to contain the thermosetting resin which acts together with a curing agent and an accelerator. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a silicone resin, a phenol resin, a thermosetting polyimide resin, a polyurethane resin, a melamine resin, and a urea resin, and in particular, heat resistance, workability, and reliability. It is most preferable to use an epoxy resin in terms of obtaining an adhesive layer having excellent resistance.

The epoxy resin is not particularly limited as long as it is cured and has an adhesive action, and is a bifunctional epoxy resin such as bisphenol A type epoxy, or a novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin. Etc. can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

Examples of the bisphenol A type epoxy resin include Epicoat series (Epicoat 807, Epicoat 815, Epicoat 825, Epicoat 827, Epicoat 828, Epicoat 834, Epicoat 1001, Epicoat 1004, Epicoat 1007, Epicoat 1009) manufactured by Mitsubishi Chemical Corporation, Dow Examples thereof include DER-330, DER-301, DER-361 manufactured by Chemical Co., and YD8125, YDF8170 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Examples of the phenol novolac type epoxy resin include Epicoat 152 and Epicoat 154 manufactured by Mitsubishi Chemical Corporation, EPPN-201 manufactured by Nippon Kayaku Co., Ltd., DEN-438 manufactured by Dow Chemical Co., Ltd., and the above o-cresol. Examples of the novolak type epoxy resin include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1012, EOCN-1025, EOCN-1027 manufactured by Nippon Kayaku Co., Ltd., YDCN701, YDCN702, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. YDCN703, YDCN704, etc. are mentioned. Examples of the polyfunctional epoxy resin include Epon 1031S manufactured by Mitsubishi Chemical Corporation, Araldite 0163 manufactured by Ciba Specialty Chemicals, Denacol EX-611, EX-614, EX-614B, EX-622 manufactured by Nagase ChemteX Corporation. , EX-512, EX-521, EX-421, EX-411, EX-321, and the like. Examples of the amine type epoxy resin include Epicoat 604 manufactured by Mitsubishi Chemical Corporation, YH-434 manufactured by Tohto Kasei Co., Ltd., TETRAD-X and TETRAD-C manufactured by Mitsubishi Gas Chemical Co., Ltd., and Sumitomo Chemical Industries, Ltd. ELM-120 and the like.
Examples of the heterocyclic ring-containing epoxy resin include Araldite PT810 manufactured by Ciba Specialty Chemicals, ERL4234, ERL4299, ERL4221, and ERL4206 manufactured by UCC. These epoxy resins can be used alone or in combination of two or more.

In order to cure the thermosetting resin, additives can be appropriately added. Examples of such additives include a curing agent, a curing accelerator, a catalyst, and the like. When a catalyst is added, a promoter can be used as necessary.

When using an epoxy resin for the thermosetting resin, it is preferable to use an epoxy resin curing agent or a curing accelerator, and it is more preferable to use these in combination. Examples of the curing agent include phenol resin, dicyandiamide, boron trifluoride complex compound, organic hydrazide compound, amines, polyamide resin, imidazole compound, urea or thiourea compound, polymercaptan compound, and polysulfide resin having a mercapto group at the end. , Acid anhydrides, and light / ultraviolet curing agents. These can be used alone or in combination of two or more.
Among these, boron trifluoride complex compounds include boron trifluoride-amine complexes with various amine compounds (preferably primary amine compounds), and organic hydrazide compounds include isophthalic acid dihydrazide.

Examples of the phenol resin include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, novolak type phenol resin such as nonylphenol novolak resin, resol type phenol resin, polyoxystyrene such as polyparaoxystyrene, etc. Can be mentioned. Of these, phenol compounds having at least two phenolic hydroxyl groups in the molecule are preferred.

Examples of the phenol compound having at least two phenolic hydroxyl groups in the molecule include phenol novolak resin, cresol novolak resin, t-butylphenol novolak resin, dicyclopentagencresol novolak resin, dicyclopentadiene phenol novolak resin, Examples include xylylene-modified phenol novolak resin, naphthol novolak resin, trisphenol novolak resin, tetrakisphenol novolak resin, bisphenol A novolak resin, poly-p-vinylphenol resin, and phenol aralkyl resin. Further, among these phenol resins, a phenol novolac resin and a phenol aralkyl resin are particularly preferable, and connection reliability can be improved.

Examples of amines include chain aliphatic amines (diethylenetriamine, triethylenetetramine, hexamethylenediamine, N, N-dimethylpropylamine, benzyldimethylamine, 2- (dimethylamino) phenol, 2,4,6-tris (dimethyl). Aminomethyl) phenol, m-xylenediamine, etc.), cyclic aliphatic amines (N-aminoethylpiperazine, bis (3-methyl-4-aminocyclohexyl) methane, bis (4-aminocyclohexyl) methane, mensendiamine, Phoronediamine, 1,3-bis (aminomethyl) cyclohexane, etc.), heterocyclic amines (piperazine, N, N-dimethylpiperazine, triethylenediamine, melamine, guanamine, etc.), aromatic amines (metaphenylenediamine, 4,4 ′) -Diaminodi Phenylmethane, diamino, 4,4′-diaminodiphenylsulfone, etc.), polyamide resin (polyamideamine is preferred, a condensation product of dimer acid and polyamine), imidazole compound (2-phenyl-4,5-dihydroxymethylimidazole, 2-methyl) Imidazole, 2,4-dimethylimidazole, 2-n-heptadecylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, epoxy-imidazole adduct, etc.), urea or thiourea compound (N, N-dialkylurea) Compounds, N, N-dialkylthiourea compounds, etc.), polymercaptan compounds, polysulfide resins with terminal mercapto groups, acid anhydrides (tetrahydrophthalic anhydride, etc.), light / ultraviolet curing agents (diphenyliodine and um hexafluoro) Sufeto, triphenylsulfonium hexafluorophosphate and the like) are exemplified.

The curing accelerator is not particularly limited as long as it cures a thermosetting resin. For example, imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl- Examples include 4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5.4.0] undecene-7-tetraphenylborate.
Examples of imidazoles include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1 -Benzyl-2-ethylimidazole, 1-benzyl-2-ethyl-5-methylimidazole, 2-phenyl-4-methyl-5-hydroxydimethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, etc. .

The content of the epoxy resin curing agent or curing accelerator in the adhesive layer is not particularly limited, and the optimum content varies depending on the type of curing agent or curing accelerator.

The blending ratio of the epoxy resin and the phenol resin is preferably blended so that, for example, the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the characteristics of the adhesive layer are likely to deteriorate. In another embodiment, the other thermosetting resin and the curing agent are 0.5 to 20 parts by mass of the curing agent with respect to 100 parts by mass of the thermosetting resin. 1 to 10 parts by mass. The content of the curing accelerator is preferably smaller than the content of the curing agent, and is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 0.1 parts by mass with respect to 100 parts by mass of the thermosetting resin. More preferred is 95 parts by mass. By adjusting within the said range, progress of sufficient hardening reaction can be assisted. The content of the catalyst is preferably 0.001 to 1.5 parts by mass, more preferably 0.01 to 1.0 parts by mass with respect to 100 parts by mass of the thermosetting resin.

Moreover, the adhesive bond layer 13 of this invention can mix | blend a filler suitably according to the use. This improves the dicing property of the adhesive layer in an uncured state, improves handling, adjusts the melt viscosity, imparts thixotropic properties, further imparts thermal conductivity and adhesive strength in the cured adhesive layer It is possible to improve.
The filler used in the present invention is preferably an inorganic filler. The inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, and boron nitride. Crystalline silica, amorphous silica, antimony oxide, and the like can be used. These can be used alone or in combination of two or more.

Of the above inorganic fillers, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferably used from the viewpoint of improving thermal conductivity. In terms of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica It is preferable to use amorphous silica or the like. From the viewpoint of improving dicing properties, it is preferable to use alumina or silica.

When the filler content is 30% by mass or more, the wire bonding property is excellent.
At the time of wire bonding, it is preferable that the storage elastic modulus after curing of the adhesive layer bonding the chip for hitting the wire is adjusted to a range of 20 to 1000 MPa at 170 ° C., and the filler content is 30% by mass or more. When it is, it is easy to adjust the storage elastic modulus after hardening of an adhesive bond layer in this range. Further, when the filler content is 75% by mass or less, the film formability and the heat fluidity of the adhesive layer during die bonding are excellent. Improving the heat fluidity of the adhesive layer during die bonding improves the adhesion between the adhesive layer and the adherend and improves the adhesion force. It also helps to suppress voids by filling the unevenness of the adherend. Become. More preferably, it is 70 mass% or less, More preferably, it is 60 mass% or less.

The adhesive layer of the present invention can contain two or more fillers having different average particle diameters as the filler. In this case, compared to the case of using a single filler, in the raw material mixture before film formation, it becomes easy to prevent a viscosity increase when the filler content ratio is high or a viscosity decrease when the filler content ratio is low, Good film formability is easily obtained, the fluidity of the uncured adhesive layer can be optimally controlled, and excellent adhesive strength can be easily obtained after the adhesive layer is cured.

In the adhesive layer of the present invention, the average particle size of the filler is preferably 2.0 μm or less, and more preferably 1.0 μm. When the average particle size of the filler is 2.0 μm or less, the film can be easily thinned. Here, a thin film implies a thickness of 20 μm or less. Moreover, dispersibility is favorable in it being 0.01 micrometer or more.
Furthermore, from the viewpoint of improving the adhesive force after curing of the adhesive layer, optimally controlling the fluidity of the uncured adhesive layer, preventing the viscosity increase or decrease of the raw material mixture before film formation, the average particle size It is preferable to include a first filler having a primary particle diameter in the range of 0.005 to 0.03 μm and a first filler having a primary particle diameter in the range of 0.005 to 0.03 μm. A first filler in which an average particle size is in a range of 0.1 to 1.0 μm and 99% or more of particles are distributed in a range of a particle size of 0.1 to 1.0 μm; and an average of primary particle sizes It is preferable to include a second filler having a particle size in the range of 0.005 to 0.03 μm and 99% or more of the particles distributed in the range of 0.005 to 0.1 μm.
The average particle size in the present invention means the D50 value of the cumulative volume distribution curve in which 50% by volume of the particles have a smaller diameter than this value. In the present invention, the average particle diameter or D50 value is measured by a laser diffraction method, for example, using a Malvern Mastersizer 2000 manufactured by Malvern Instruments. In this technique, the size of the particles in the dispersion is measured using laser beam diffraction based on either Fraunhofer or Mie theory applications. In the present invention, Mie theory or modified Mie theory for non-spherical particles is used, and the average particle diameter or D50 value relates to scattering measurement at 0.02 to 135 ° with respect to the incident laser beam.

In the present invention, in one embodiment, a thermoplastic resin having a weight average molecular weight of 5000 to 200,000 of 10 to 40% by mass and 10 to 40% by mass of the entire pressure-sensitive adhesive composition constituting the adhesive layer 13 is used. And 30 to 75% by mass of filler. In this embodiment, the filler content may be 30 to 60% by mass, or 40 to 60% by mass.
The mass average molecular weight of the thermoplastic resin may be 5000 to 150,000, or 10,000 to 100,000.
In another aspect, a thermoplastic resin having a weight average molecular weight of 200,000 to 2,000,000 with respect to the entire pressure-sensitive adhesive composition constituting the

adhesive layer

13, and 20 to 50% by weight. And 30 to 75% by mass of filler. In this embodiment, the filler content may be 30 to 60% by mass, or 30 to 50% by mass. The mass average molecular weight of the thermoplastic resin may be 200,000 to 1,000,000, or 200,000 to 800,000.
By adjusting the blending ratio, the storage elastic modulus and fluidity after curing of the adhesive layer 13 can be optimized, and heat resistance at high temperatures tends to be sufficiently obtained.

In the semiconductor processing tape 10 of the present invention, the adhesive layer 13 may be formed by laminating a film (hereinafter referred to as an adhesive film) directly or indirectly on the base film 11. . The laminating temperature is preferably in the range of 10 to 100 ° C., and a linear pressure of 0.01 to 10 N / m is preferably applied. Such an adhesive film may be one in which an adhesive layer 13 is formed on a release film. In this case, the release film may be released after lamination, or the semiconductor processing tape 10 may be used as it is. It may be used as a cover film and peeled when a wafer is bonded.

Although the said adhesive film may be laminated | stacked on the whole surface of the adhesive layer 12, even if it laminate | stacks the adhesive film cut | disconnected in the shape according to the wafer previously bonded (pre-cut) on the adhesive layer 12 Good. Thus, when the adhesive film according to a wafer is laminated | stacked, as shown in FIG. 3, there exists the adhesive bond layer 13 in the part to which the wafer W is bonded, and in the part to which the ring frame 20 is bonded. Only the pressure-sensitive adhesive layer 12 is present without the adhesive layer 13. In general, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using a pre-cut adhesive film, and the ring is peeled off when the tape is peeled after use. The effect that the adhesive residue to the frame 20 hardly occurs is obtained.

<Application>
The semiconductor processing tape 10 of the present invention is used in a method for manufacturing a semiconductor device including an expanding process for dividing the adhesive layer 13 by at least expansion. Therefore, other processes and the order of processes are not particularly limited. For example, it can be suitably used in the following semiconductor device manufacturing methods (A) to (E).

Manufacturing method of semiconductor device (A)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam to a portion to be divided of the wafer, and forming a modified region by multiphoton absorption inside the wafer;
(F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process,
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape; and a method of manufacturing a semiconductor device.

Manufacturing method of semiconductor device (B)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam along a cutting line on the wafer surface, and cutting the wafer into chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:

Manufacturing method of semiconductor device (C)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) cutting the wafer along a cutting line using a dicing blade and cutting the wafer into chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:

Manufacturing method of semiconductor device (D)
(A) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and cutting the wafer to a depth less than the thickness of the wafer along a planned cutting line using a dicing blade;
(B) bonding a surface protective tape to the wafer surface;
(C) a back grinding process in which the dicing tape is peeled off and the back surface of the wafer is ground and divided into chips;
(D) A step of bonding an adhesive layer of the semiconductor processing tape to the back surface of the wafer divided into the chips while the wafer is heated;
(E) peeling the surface protection tape from the wafer surface divided into the chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) In the semiconductor processing tape after expansion, removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip, and maintaining the interval between the chips;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape; and a method of manufacturing a semiconductor device.

Manufacturing method of semiconductor device (E)
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding process for grinding the back surface of the wafer;
(D) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(E) peeling the surface protection tape from the wafer surface;
(F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process,
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape;
A method of manufacturing a semiconductor device including:

<How to use>
A method of using the tape when the semiconductor processing tape 10 of the present invention is applied to the above-described semiconductor device manufacturing method (A) will be described with reference to FIGS. First, as shown in FIG. 2, a surface protection tape 14 for protecting a circuit pattern containing an ultraviolet curable component in an adhesive is bonded to the surface of a wafer W on which a circuit pattern is formed. Perform back grinding process to grind.

After the back grinding process, as shown in FIG. 3, the wafer W is placed on the heater table 25 of the wafer mounter with the front side facing down, and then the semiconductor processing tape 10 is bonded to the back side of the wafer W. To do. The semiconductor processing tape 10 used here is obtained by laminating an adhesive film that has been cut (precut) in advance in a shape corresponding to the wafer W to be bonded, and an adhesive layer on the surface to be bonded to the wafer W. The adhesive layer 12 is exposed around the area where 13 is exposed. The portion of the semiconductor processing tape 10 where the adhesive layer 13 is exposed and the back surface of the wafer W are bonded together, and the portion where the adhesive layer 12 around the adhesive layer 13 is exposed and the ring frame 20 are bonded together. At this time, the heater table 25 is set to 70 to 80 ° C., and thus heat bonding is performed. In the present embodiment, the adhesive tape 15 composed of the base film 11 and the adhesive layer 12 provided on the base film 11 and the adhesive layer 13 provided on the adhesive layer 12 are provided. Although the semiconductor processing tape 10 is used, an adhesive tape and a film adhesive may be used. In this case, first, a film-like adhesive is bonded to the back surface of the wafer to form an adhesive layer, and an adhesive layer of an adhesive tape is bonded to the adhesive layer. At this time, the adhesive tape 15 according to the present invention is used as the adhesive tape.

Next, the wafer W bonded with the semiconductor processing tape 10 is unloaded from the heater table 25 and placed on the suction table 26 with the semiconductor processing tape 10 side down as shown in FIG. Then, from the upper side of the wafer W sucked and fixed to the suction table 26, using the energy beam light source 27, for example, 1000 mJ / cm ² of ultraviolet light is irradiated to the substrate surface side of the surface protective tape 14, The adhesive strength to the wafer W is reduced, and the surface protection tape 14 is peeled off from the surface of the wafer W.

Next, as shown in FIG. 5, a laser beam is irradiated on a portion to be divided of the wafer W to form a modified region 32 by multiphoton absorption inside the wafer W.

Next, as shown in FIG. 6A, the semiconductor processing tape 10 to which the wafer W and the ring frame 20 are bonded is placed on the stage 21 of the expanding apparatus with the base film 11 side facing down. .

Next, as shown in FIG. 6B, in the state where the ring frame 20 is fixed, the hollow cylindrical push-up member 22 of the expanding device is raised to expand (expand) the semiconductor processing tape 10. As expansion conditions, the expanding speed is, for example, 5 to 500 mm / sec, and the expanding amount (push-up amount) is, for example, 5 to 25 mm. Thus, the semiconductor processing tape 10 is stretched in the radial direction of the wafer W, whereby the wafer W is divided into chips 34 starting from the modified region 32. At this time, in the adhesive layer 13, elongation (deformation) due to expansion is suppressed at the portion bonded to the back surface of the wafer W, and no breakage occurs. However, tension due to expansion of the tape is concentrated between the chips 34. And break. Therefore, as shown in FIG. 6C, the adhesive layer 13 is also cut off together with the wafer W. Thereby, the some chip | tip 34 with the adhesive bond layer 13 can be obtained.

Next, as shown in FIG. 7, the push-up member 22 is returned to the original position, the slack of the semiconductor processing tape 10 generated in the previous expanding process is removed, and the distance between the chips 34 is stably maintained. Perform the process. In this step, for example, hot air of 90 to 120 ° C. is used in the annular heat shrinkage region 28 between the region where the chip 34 exists in the semiconductor processing tape 10 and the ring frame 20 by using the hot air nozzle 29. To heat and shrink the base film 11 so that the semiconductor processing tape 10 is stretched.

Thereafter, the adhesive layer 12 is subjected to an energy ray curing process or a thermosetting process to weaken the adhesive force of the adhesive layer 12 to the adhesive layer 13, and then the chip 34 is picked up.
In addition, as mentioned above, it is also possible to perform an energy ray hardening process before performing an expand process, and it is preferable.

<Example>
Next, in order to further clarify the effects of the present invention, examples and comparative examples will be described in detail, but the present invention is not limited to these examples.

[Production of semiconductor processing tape]
(1) Production of base film <Base film 1A>
Zinc ionomer a (density 0.96 g / cm ³ , zinc ion content 4 mass) of ethylene-methacrylic acid-ethyl methacrylate (mass ratio 8: 1: 1) terpolymer synthesized by radical polymerization method %, Chlorine content of less than 1% by mass, Vicat softening point 56 ° C., melting point 86 ° C.) are melted at 140 ° C. and formed into a long film of 100 μm thickness using an extruder. A material film 1A was produced.
<Base film 2A>
Zinc ionomer b (density 0.96 g / cm ³ , zinc ion content 6 mass%, chlorine) of ethylene-methacrylic acid (mass ratio 7.5: 2.5) binary copolymer synthesized by radical polymerization method A resin bead having a content of less than 1% by mass, a Vicat softening point of 65 ° C., and a melting point of 88 ° C. is melted at 140 ° C., and formed into a long film having a thickness of 100 μm using an extruder. Was made.
<Base film 3A>
Zinc ionomer c of ethylene-methacrylic acid (mass ratio 9: 1) binary copolymer synthesized by radical polymerization method (density 0.95 g / cm ³ , zinc ion content 3 mass%, chlorine content 1 mass) %, Vicat softening point 84 ° C., melting point 102 ° C.) were melted at 140 ° C., and formed into a long film having a thickness of 100 μm using an extruder to prepare a base film 3A.
<Base film 4A>
Novatec PP FW4B (polypropylene) manufactured by Nippon Polychem Co., Ltd. (density: 0.90 g / cm ³ , Vicat softening point 96 ° C., melting point: 140 ° C.) was melted at 180 ° C., and the thickness was 100 μm using an extruder. The base film 4A was produced by forming into a long film shape.

(2) Adjustment of pressure-sensitive adhesive composition (pressure-sensitive adhesive 1B)
As the acrylic copolymer (A1) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, the ratio of 2-ethylhexyl acrylate being 55 mol%, and the weight average molecular weight being 750,000 Was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value would be 25, and an acrylic copolymer (a-) having a glass transition temperature of −50 ° C., a hydroxyl value of 10 gKOH / g, and an acid value of 5 mgKOH / g. 1) was prepared.
3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemicals) as a polyisocyanate is added to 100 parts by mass of the acrylic copolymer (a-1), and Esacure KIP 150 (manufactured by Lamberti) is used as a photopolymerization initiator. The mixture added with parts by mass was dissolved in ethyl acetate and stirred to prepare adhesive 1B.
(Adhesive 2B)
As the acrylic copolymer (A2) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, the ratio of 2-ethylhexyl acrylate being 55 mol%, and the weight average molecular weight being 750,000 Was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 20, and an acrylic copolymer (a-) having a glass transition temperature of −50 ° C., a hydroxyl value of 15 gKOH / g, and an acid value of 5 mgKOH / g. 2) was prepared.
3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemicals) as a polyisocyanate is added to 100 parts by mass of the acrylic copolymer (a-2), and Esacure KIP 150 (manufactured by Lamberti) is used as a photopolymerization initiator. The mixture added with parts by mass was dissolved in ethyl acetate and stirred to prepare adhesive 2B.
(Adhesive 3B)
As the acrylic copolymer (A3) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, the ratio of 2-ethylhexyl acrylate being 55 mol%, and the mass average molecular weight of 750,000 Was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 15, and an acrylic copolymer (a-) having a glass transition temperature of −50 ° C., a hydroxyl value of 20 gKOH / g, and an acid value of 5 mgKOH / g. 3) was prepared.
3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemicals) as a polyisocyanate is added to 100 parts by mass of the acrylic copolymer (a-3), and Esacure KIP 150 (manufactured by Lamberti) is used as a photopolymerization initiator. The mixture added with parts by mass was dissolved in ethyl acetate and stirred to prepare an adhesive 3B.
(Adhesive 4B)
As an acrylic copolymer (A4) having a functional group, a copolymer comprising 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, the ratio of 2-ethylhexyl acrylate being 55 mol%, and the weight average molecular weight being 750,000 Was prepared. Next, 2-isocyanatoethyl methacrylate was added so that the iodine value was 5, and an acrylic copolymer (a-) having a glass transition temperature of −50 ° C., a hydroxyl value of 30 mgKOH / g, and an acid value of 5 mgKOH / g. 4) was prepared.
3 parts by mass of P301-75E (manufactured by Asahi Kasei Chemicals) as a polyisocyanate is added to 100 parts by mass of the acrylic copolymer (a-4), and Esacure KIP 150 (manufactured by Lamberti) is used as a photopolymerization initiator. The mixture added with parts by mass was dissolved in ethyl acetate and stirred to prepare adhesive 4B.

(3) Preparation of pressure-sensitive adhesive sheet A 1B to 4B pressure-sensitive adhesive was applied to a release liner made of a polyethylene-terephthalate film that had been subjected to a release treatment so that the thickness after drying was 10 μm, and dried at 110 ° C. for 2 minutes. After that, it was bonded to a base film of 1A to 4A to produce a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer formed on the base film. Combinations of the base films 1A to 4A and the adhesives 1B to 4B are shown in Table 1 in the examples.

(4) Preparation of adhesive composition 50 parts by mass of epoxy resin “1002” (Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600), epoxy resin “806” (product of Mitsubishi Chemical Corporation) Name, bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, curing agent “Dyhard100SF” (Degusa brand name, dicyandiamide), silica filler “SO-C2” (Admafine Co., Ltd.) ) Product name, average particle size 0.5 μm) 150 parts by mass, and “Aerosil R972” which is a silica filler (product name, average particle size 0.016 μm of primary particle size by Nippon Aerosil Co., Ltd.) 5 parts by mass MEK was added to the composition consisting of and stirred and mixed to obtain a uniform composition.
To this, 100 parts by mass of phenoxy resin “PKHH” (trade name, INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.), coupling agent “KBM-802” (trade name, manufactured by Shin-Etsu Silicone Co., Ltd.) 0.4 part by mass of mercaptopropyltrimethoxysilane) and “CURESOL 2PHZ-PW” (trade name, 2-phenyl-4,5-dihydroxymethylimidazole, manufactured by Shikoku Kasei Co., Ltd.) as a curing accelerator, decomposition temperature 230 C.) 0.5 parts by mass was added and mixed with stirring until uniform. Furthermore, this was filtered with a 100-mesh filter and vacuum degassed to obtain an adhesive composition varnish.

(5) Preparation of adhesive film Next, the adhesive composition was applied to a release liner made of a polyethylene-terephthalate film that had been subjected to a release treatment so that the thickness after drying was 20 μm. It was made to dry for minutes and the adhesive film in which the adhesive bond layer was formed on the release liner was produced.

(Creation of semiconductor processing tape)
The pressure-sensitive adhesive sheet was cut into a shape shown in FIG. 3 or the like that can be attached to the ring frame so as to cover the opening. Moreover, the adhesive film was cut into the shape shown in FIG. Then, the adhesive layer side of the adhesive sheet and the adhesive layer side of the adhesive film are pasted so that a portion where the adhesive layer 12 is exposed is formed around the adhesive film as shown in FIG. In addition, a semiconductor processing tape was produced.

<Examples 1 to 5, Comparative Examples 1, 3 to 5>
A surface protection tape is bonded to the wafer surface on which the circuit pattern is formed,
Irradiating a laser beam to a portion to be divided of the wafer, forming a modified region by multiphoton absorption inside the wafer,
Applying a back grinding process for grinding the wafer back surface,
In a state where the wafer is heated to 70 to 80 ° C., an adhesive layer of the semiconductor processing tape is bonded to the back surface of the wafer,
Peeling the surface protection tape from the wafer surface;
The semiconductor processing tape is subjected to ultraviolet irradiation treatment at an output of 200 mJ / cm ² ,
By expanding the semiconductor processing tape, the wafer and the adhesive layer of the semiconductor processing tape are divided along a dividing line, and an expanding process is performed to obtain a plurality of chips with the adhesive layer. ,
A portion that does not overlap the chip of the semiconductor processing tape (an annular region between the region where the chip is present and the ring frame) is heated to 100 ° C. to remove the slack generated in the expanding process, The following physical properties were evaluated for the semiconductor processing tape that had been subjected to the step of maintaining the distance between the chips. The chip size is 5 mm × 5 mm.

<Comparative example 2>
The following physical properties were evaluated for the semiconductor processing tapes subjected to the same steps as in Examples 1 to 5 and Comparative Examples 1 and 3 to 5 except that the ultraviolet irradiation treatment was not performed.

(Measurement of stress)
The pressure-sensitive adhesive tape in the step of dividing the adhesive layer with the expand was subjected to a tensile test according to the method defined in JIS 7162, and the stress of only the base material and the stress of the pressure-sensitive adhesive tape when the tensile elongation was 10% were measured.
In addition, said "stress of an adhesive tape" is the stress of what was extract | collected in the expanding process of the manufacturing method of a semiconductor device about the tape 10 for semiconductor processing of this invention.
Moreover, the above-mentioned “stress only on the base material” means the stress in the state of only the base film 11 before the adhesive layer 12 is provided on the base film 11.

<Evaluation of pickup property>
The process of picking up the semiconductor chip from the adhesive layer of the semiconductor processing tape was carried out, and the pickup property was evaluated.
Specifically, a pickup test using a die picker device (product name: CAP-300II, manufactured by Canon Machinery Co., Ltd.) was performed on any 1000 chips, and the pick-up was performed with the adhesive layer peeled off from the adhesive layer being held. The success rate of pickup was calculated as a success, and the pickup property was evaluated.
"◎" with 100% pickup success rate as a good product
98% or more as good products
"△" with 95% or more and less than 98% as acceptable product
Those less than 95% were evaluated as “x” as defective products.

<Evaluation of kerf width uniformity>
In a 12-inch wafer, the kerf width in the longitudinal direction and the width direction of the central portion of the effective chip (5 mm × 5 mm) is measured, and the smaller value is 50 μm or more, “◎”,
“O” for 30 μm or more and less than 50 μm,
“△” for 15 μm or more and less than 30 μm
“×” for less than 15 μm,
It was evaluated with.

Table 2 shows the results of these stresses, kerf width evaluation, and pickup evaluation.

<Evaluation results>
As shown in Table 2, the stress of the pressure-sensitive adhesive tape / the stress of only the base material = 1 or less. Examples 1 to 5 have a sufficiently wide and uniform kerf width and exhibit good pick-up properties not found in the prior art. Became clear.
On the other hand, Comparative Examples 1 to 4 that did not satisfy the above conditions showed an evaluation that the kerf width was narrow or not uniform and the pickup property was inferior.

10: Semiconductor processing tape 11: Base film 12: Adhesive layer 13: Adhesive layer 14: Surface protection tape 15: Auxiliary tape 20: Ring frame 21: Stage 22: Push-up member 25: Heater table 26: Suction table 27 : Ultraviolet (energy ray) light source 28: Heat shrinkage area 29: Hot air nozzle 32: Modification area 34: Chip

Claims

In the step of having an adhesive tape comprising a base film and an adhesive layer formed on at least one side of the base film and dividing the adhesive by expanding, the adhesive tape is subjected to the method defined in JIS 7162 In the tensile test, the relationship between the stress of only the base material when the tensile elongation is 10% and the stress of the adhesive tape is

Adhesive tape stress / Substrate only stress = 1 or less
The tape for semiconductor processing characterized by being.
The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam to a portion to be divided of the wafer, and forming a modified region by multiphoton absorption inside the wafer;
(F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process,
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape, and using the chip for manufacturing a semiconductor device. Tape for semiconductor processing.
The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) irradiating a laser beam along a cutting line on the wafer surface, and cutting the wafer into chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape, and using the chip for manufacturing a semiconductor device. Tape for semiconductor processing.
The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) a back grinding process for grinding the back surface of the wafer;
(C) A process of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(D) peeling the surface protection tape from the wafer surface;
(E) cutting the wafer along a cutting line using a dicing blade and cutting the wafer into chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape, and using the chip for manufacturing a semiconductor device. Tape for semiconductor processing.
The semiconductor processing tape is
(A) bonding a dicing tape to the back surface of the wafer on which the circuit pattern is formed, and cutting the wafer to a depth less than the thickness of the wafer along a planned cutting line using a dicing blade;
(B) bonding a surface protective tape to the wafer surface;
(C) a back grinding process in which the dicing tape is peeled off and the back surface of the wafer is ground and divided into chips;
(D) A step of bonding an adhesive layer of the semiconductor processing tape to the back surface of the wafer divided into the chips while the wafer is heated;
(E) peeling the surface protection tape from the wafer surface divided into the chips;
(F) Expanding the semiconductor processing tape to divide the adhesive layer for each chip and to obtain a plurality of chips with the adhesive layer;
(G) In the semiconductor processing tape after expansion, removing the slack generated in the expanding step by heating and shrinking a portion that does not overlap the chip, and maintaining the interval between the chips;
The method of claim 1, wherein (h) the chip with the adhesive layer is picked up from the adhesive layer of the semiconductor processing tape. Tape for semiconductor processing.
The semiconductor processing tape is
(A) a step of bonding a surface protection tape to the wafer surface on which a circuit pattern is formed;
(B) irradiating a laser beam to a portion to be divided of the wafer to form a modified region by multiphoton absorption inside the wafer;
(C) a back grinding process for grinding the back surface of the wafer;
(D) a step of bonding the adhesive layer of the semiconductor processing tape to the back surface of the wafer while the wafer is heated;
(E) peeling the surface protection tape from the wafer surface;
(F) Expanding the semiconductor processing tape to divide the wafer and the adhesive layer of the semiconductor processing tape along a cutting line to obtain a plurality of chips with the adhesive layer Process,
(G) in the expanded semiconductor processing tape, by heating and shrinking a portion that does not overlap with the chip, the slack generated in the expanding step is removed and the interval between the chips is maintained;
(H) picking up the chip with the adhesive layer from the adhesive layer of the semiconductor processing tape, and using the chip for manufacturing a semiconductor device. Tape for semiconductor processing.
A semiconductor device using the semiconductor processing tape according to any one of claims 1 to 6.