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WO2016017645A1 - Substrat de support avec pellicule inorganique ainsi que stratifié de verre, procédé de fabrication de ceux-ci, et procédé de fabrication de dispositif électronique - Google Patents

Substrat de support avec pellicule inorganique ainsi que stratifié de verre, procédé de fabrication de ceux-ci, et procédé de fabrication de dispositif électronique Download PDF

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Publication number
WO2016017645A1
WO2016017645A1 PCT/JP2015/071388 JP2015071388W WO2016017645A1 WO 2016017645 A1 WO2016017645 A1 WO 2016017645A1 JP 2015071388 W JP2015071388 W JP 2015071388W WO 2016017645 A1 WO2016017645 A1 WO 2016017645A1
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WO
WIPO (PCT)
Prior art keywords
inorganic film
support substrate
glass
substrate
glass substrate
Prior art date
Application number
PCT/JP2015/071388
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English (en)
Japanese (ja)
Inventor
藤原　晃男
祐人 亀田
光耀 牛
政洋 岸
陽介 秋田
祥孝 松山
Original Assignee
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Priority to CN201580041401.4A priority Critical patent/CN106573443B/zh
Priority to KR1020177001691A priority patent/KR20170039135A/ko
Priority to JP2016538369A priority patent/JPWO2016017645A1/ja
Publication of WO2016017645A1 publication Critical patent/WO2016017645A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present invention relates to a support substrate with an inorganic film used when manufacturing an electronic device such as a liquid crystal panel or an organic EL panel using a glass substrate, a glass laminate in which a glass substrate is laminated thereon, and these The present invention relates to a manufacturing method and an electronic device manufacturing method.
  • an electronic device is manufactured on a glass substrate while the glass substrate is supported by a support substrate.
  • a support substrate with an inorganic film in which an inorganic film (adsorption film) is formed on a glass support substrate is prepared, and a laminated body in which a glass substrate is laminated and adhered to the inorganic film of the support substrate is obtained.
  • the method of peeling the glass substrate with which the electronic device was manufactured from this laminated body is proposed (patent documents 1 and 2). According to these methods, even if the glass substrate is thin, handling properties are improved, and appropriate positioning is possible, and the glass substrate on which the elements are arranged after a predetermined treatment can be easily peeled from the laminate. The effect is disclosed.
  • adhesion may be poor when a glass substrate is laminated on the surface of the inorganic film. That is, even if the inorganic film of the supporting substrate and the glass substrate are stacked, they do not naturally adhere to each other, and even if they are mechanically pressed, they do not adhere to each other, or even if they adhere, they may be easily peeled off.
  • An object of the present invention is to solve such problems of the prior art, suppress foaming between the glass substrate and the inorganic film when processing at a high temperature, and further, the inorganic film and the glass substrate.
  • the support substrate with an inorganic film according to the present invention has a support substrate and an inorganic film formed on the support substrate,
  • the surface on the inorganic film side of the support substrate with an inorganic film has a surface roughness Ra of more than 2 nm, and a difference in peak height between a load length ratio of 0% and 10% of a load curve is 20 nm or less.
  • the difference between the surface roughness Ra and the peak height is due to a surface property of the inorganic film.
  • the thickness of the said inorganic film at that time is 10 nm or more.
  • the difference between the surface roughness Ra and the peak height is caused by the surface property of the support substrate, or by the surface property of the inorganic film and the surface property of the support substrate. It is preferable to do.
  • the thickness of the inorganic film at that time is preferably 10 to 60 nm.
  • the support substrate in the support substrate with an inorganic film according to the present invention is preferably made of glass.
  • the glass laminate of the present invention is characterized in that a glass substrate is laminated on the inorganic film of the support substrate with an inorganic film according to the present invention.
  • the first aspect of the method for producing a support substrate with an inorganic film of the present invention is characterized in that an inorganic film is formed on the surface of the support substrate, and then the surface of the inorganic film is flattened.
  • the 2nd aspect of the manufacturing method of the support substrate with an inorganic film of this invention produces the support substrate by roughening the surface of the plate-shaped object used as a support substrate, and an inorganic film is formed on the surface of the said support substrate. It is characterized by forming.
  • the inorganic film is further planarized after the inorganic film is formed. Further, it is preferable that after the surface of the plate-like material is roughened, the surface subjected to the roughening treatment is further flattened to produce a support substrate.
  • the manufacturing method of the glass laminated body of this invention laminates
  • the method for manufacturing an electronic device of the present invention is characterized by using the method for manufacturing a glass laminate of the present invention.
  • the support substrate with an inorganic film according to the present invention is used for a support substrate of a glass laminate in which a glass substrate is laminated, when an electronic device is formed on the glass substrate, the electronic device is provided with good adhesion. Even when a high temperature treatment exceeding 450 ° C. is performed in the manufacture of the above, it is possible to suppress the generation of bubbles between the glass substrate and the inorganic film.
  • FIG. 1 (A) is a side sectional view conceptually showing an example of the support substrate with an inorganic film of the present invention
  • FIG. 1 (B) is a side view conceptually showing an example of the glass laminate of the present invention
  • FIG. FIG. 2 is a diagram conceptually illustrating an example of a load curve.
  • 3 (A) to 3 (D) are side cross-sectional views for explaining an example of a method for producing a support substrate with an inorganic film and a glass laminate according to the present invention.
  • 4 (A) to 4 (E) are side cross-sectional views for explaining an example of a method for producing a support substrate with an inorganic film and a glass laminate according to the present invention.
  • 5 (A) to 5 (E) are side cross-sectional views for explaining an example of the method for manufacturing the support substrate with an inorganic film and the glass laminate of the present invention.
  • FIG. 1A conceptually shows an example of the support substrate with an inorganic film of the present invention.
  • FIG. 1A is a cross-sectional view of the side surface of the support substrate with an inorganic film.
  • the support substrate 10 with an inorganic film of the present invention is used as a support substrate for supporting a glass substrate in the production of an electronic device or the like using a glass substrate, and basically comprises a support substrate 12 and an inorganic film 14. Is done.
  • FIG. 1B such a support substrate 10 with an inorganic film is obtained by laminating and closely bonding a glass substrate 16 to an inorganic film 14 to form a glass laminate 20 of the present invention. 16 is used in the manufacture of electronic devices.
  • the surface on the inorganic film 14 side has a surface roughness Ra of more than 2 nm and a peak height at a load length ratio of 0% and 10% of the load curve.
  • the difference is 20 nm or less. This will be described in detail later.
  • the support substrate 12 mainly supports the glass substrate 16 in the glass laminate 20 shown in FIG. 1B and prevents damage or deformation of the glass substrate 16.
  • the support substrate 12 can use various plate materials (plates) such as a metal plate such as a glass plate and a stainless steel (SUS) plate.
  • the support substrate 12 may be formed of a material having a small difference in linear expansion coefficient from the glass substrate 16 when a process involving heat treatment is included.
  • the support substrate 12 is preferably formed of the same material as the glass substrate 16, and the support substrate 12 is more preferably a glass plate.
  • the support substrate 12 is preferably a glass plate made of the same glass material as the glass substrate 16.
  • the thickness of the support substrate 12 may be thicker than the glass substrate 16 mentioned later, and may be thin.
  • the thickness of the support substrate 12 is selected based on the thickness of the glass substrate 16, the thickness of the inorganic film 14, and the thickness of the glass laminate 20 with an inorganic film described later.
  • the support substrate The thickness of 12 is 0.4 mm.
  • the thickness of the support substrate 12 is preferably 0.2 to 5 mm.
  • the thickness of the support substrate 12 is preferably 0.08 mm or more for reasons such as being easy to handle and difficult to break.
  • the thickness of the glass plate is preferably 1.0 mm or less because the rigidity is desired such that the glass plate is appropriately bent without being cracked when it is peeled after forming the electronic device member.
  • an inorganic film 14 which is a film made of an inorganic material is formed on one surface (one main surface) of the support substrate 12.
  • the inorganic film 14 is a film (adsorption film) for laminating the glass substrate 16 on the support substrate 10 with an inorganic film and making it adhere in a peelable manner.
  • the inorganic film 14 is an easily peelable film having a function of laminating the glass substrate 16 on the support substrate 10 with an inorganic film, and holding (sticking) the glass substrate 16.
  • the inorganic film 14 exhibits excellent heat resistance.
  • the inorganic film 14 hardly adheres to the glass substrate 16 due to heavy peeling.
  • the heavy peeling means that the peel strength at the interface between the inorganic film 14 and the glass substrate 16 is the peel strength at the interface between the support substrate 12 and the inorganic film 14 and the strength of the material of the inorganic film 14 (bulk strength). ) Means larger than any of the above.
  • the adhesion of the inorganic film 14 to the surface of the glass substrate 16 means that the entire inorganic film 14 adheres to the surface of the glass substrate 16, and the surface of the inorganic film 14 is damaged and some of the components on the surface of the inorganic film 14 are glass substrate 16. It means to adhere to the surface.
  • the inorganic film 14 can be made of various inorganic compounds that are used in a known support substrate with an inorganic film for supporting a glass substrate on which an electronic device is formed in the manufacture of an electronic device or the like. is there. Specifically, it preferably contains at least one selected from the group consisting of oxides, nitrides, oxynitrides, carbides, carbonitrides, silicides and fluorides.
  • oxide, nitride, and oxynitride examples include Si, Hf, Zr, Ta, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Examples thereof include oxides, nitrides, and oxynitrides of one or more elements selected from Eu, Gd, Dy, Er, Sr, Sn, In, Ce, and Ba.
  • Examples of the carbide and carbonitride include carbides and carbonitrides of one or more elements selected from Ti, W, Si, Zr, and Nb. More specifically, titanium carbide (TiC), tungsten carbide (WC), silicon carbide (SiC), niobium carbide (NbC), zirconium carbide (ZrC), titanium carbonitride (TiCN), tungsten carbonitride (WCN), Examples thereof include silicon carbonitride (SiCN), niobium carbonitride (NbCN), and zirconium carbonitride (ZrCN).
  • silicide examples include silicides of one or more elements selected from W, Fe, Mn, Mg, Mo, Cr, Ru, Re, Co, Ni, Ta, Ti, Zr, and Ba.
  • fluoride examples include fluorides of one or more elements selected from Mg, Y, La, and Ba.
  • the peelability from the glass substrate 16 after heat-treating the glass laminate 20 is good, and the film characteristics change due to the heat treatment while having adhesiveness that can withstand processing before heat treatment.
  • Silicon carbide, indium tin oxide and indium cerium oxide are more preferably exemplified in that they can be easily reused, easily obtained, and can be controlled in film formation.
  • membrane 14 suitably according to forming materials, such as the support substrate 12.
  • FIG. For example, when a glass plate is used as the support substrate 12, the average linear expansion coefficient is preferably 10 ⁇ 10 ⁇ 7 to 200 ⁇ 10 ⁇ 7 / ° C. If it is this range, the difference of the average linear expansion coefficient with a glass plate will become small, and the position shift of the glass substrate 16 and the support substrate 10 with an inorganic film in a high temperature environment can be suppressed more.
  • the inorganic film 14 preferably contains at least one of the above-described inorganic compounds as a main component.
  • the main component means that the total content thereof is 90% by mass or more with respect to the total amount of the inorganic film 14, preferably 98% by mass or more, and 99% by mass or more. More preferably.
  • the components and content of the inorganic film are EDX (Energy Dispersive X-ray Spectroscopy; Energy Dispersive X-ray Spectroscopy), XPS (X-ray Photoelectron Spectroscopy; X-ray Photoelectron Spectroscopy), SIMS (Secondary Ion Spectroscopy; Secondary ion mass spectrometry).
  • the thickness of the inorganic film 14 is appropriately determined depending on the surface properties of the target inorganic film 14, the type of the laminated glass substrate 16, the surface properties of the support substrate 12, etc., depending on the processes and film materials described below. You only have to set it.
  • the inorganic film 14 is illustrated as a single layer in FIGS. 1A and 1B, but may have a laminated structure of two or more layers. In the case of a laminated structure of two or more layers, each layer may have a different composition. Further, the inorganic film 14 is usually formed on the entire surface of the support substrate 12, but may have a region where the inorganic film 14 is not formed on the surface of the support substrate 12 as long as the effects of the present invention are not impaired.
  • the surface on the inorganic film 14 side has a surface roughness Ra of more than 2 nm and a peak height at a load length ratio of 0% and 10% of the load curve.
  • the difference is 20 nm or less.
  • the glass laminate 20 of the present invention is obtained by laminating a glass substrate 16 on the inorganic film 14 of the support substrate 10 with an inorganic film of the present invention and closely adhering thereto. It will be.
  • the glass substrate 16 may be a general one.
  • the type of electronic device using the glass substrate 16 (glass laminate 20), such as an LCD or OLED, and a glass suitable for the manufacturing process are appropriately selected. do it.
  • non-alkali borosilicate glass, borosilicate glass, soda lime glass, high silica glass, oxide glass mainly containing other silicon oxides, and the like are preferably exemplified.
  • the oxide glass is preferably a glass having a silicon oxide content of 40 to 90% by mass in terms of oxide.
  • the glass substrate 16 when the glass substrate 16 is used in an LCD, the elution of the alkali metal component tends to affect the liquid crystal. Therefore, the glass substantially does not contain the alkali metal component (non-alkali glass (but usually alkaline earth). )) Is used.
  • the glass substrate 16 is obtained by melting a glass raw material and molding the molten glass into a plate shape.
  • a molding method may be a general one, and for example, a float method, a fusion method, a slot down draw method, a full call method, a rubber method, or the like is used.
  • a glass substrate having a particularly small thickness can be obtained by heating a glass once formed into a plate shape to a moldable temperature, and stretching it by means of stretching or the like to make it thin (redraw method).
  • the thickness of the glass substrate 16 is preferably 0.8 mm or less, more preferably 0.3 mm or less, and particularly preferably 0.15 mm or less from the viewpoint of reducing the thickness and / or weight of the glass substrate 16. .
  • the thickness of the glass substrate 16 is preferably 0.8 mm or less, more preferably 0.3 mm or less, and particularly preferably 0.15 mm or less from the viewpoint of reducing the thickness and / or weight of the glass substrate 16. .
  • the thickness of the glass substrate 16 is preferably 0.8 mm or less, more preferably 0.3 mm or less, and particularly preferably 0.15 mm or less from the viewpoint of reducing the thickness and / or weight of the glass substrate 16. .
  • the thickness of the glass substrate 16 is 0.15 mm or less, the glass substrate 16 can be wound into a roll. Further, the thickness of the glass substrate 16 is preferably 0.03 mm or more for reasons such as easy manufacture of the glass substrate 16 and easy handling of the glass substrate 16.
  • the glass substrate 16 may be composed of two or more layers.
  • the material forming each layer may be the same material or a different material.
  • the “glass substrate thickness” is the total thickness of all layers.
  • the surface on the inorganic film 14 side has a surface roughness Ra of more than 2 nm and a load length ratio of 0% on the load curve.
  • the difference in peak height from 10% is 20 nm or less. Since the support substrate 10 with an inorganic film of the present invention has such a configuration, when the glass substrate 16 is laminated on the inorganic film 14 to form the glass laminate 20, the inorganic film 14 and the glass substrate 16 are good. In addition to ensuring good adhesion, even when heat treatment is performed at a high temperature in order to form an electronic device on the glass substrate 16, it is possible to suppress the generation of bubbles between the inorganic film 14 and the glass substrate 16. Furthermore, the support substrate 10 with an inorganic film of the present invention has good releasability between the inorganic film 14 and the glass substrate 16 after heat treatment to form an electronic device on the glass substrate 16 (good easy peeling). Have sex).
  • a support substrate with an inorganic film formed by forming an inorganic film on a support substrate as shown in Patent Document 1 and Patent Document 2 is known.
  • this support substrate with an inorganic film it is a case where a thin glass substrate is used, and it is possible to appropriately manufacture an electronic device while ensuring good handling properties.
  • high temperature conditions such as 450 ° C. or higher when manufacturing electronic devices.
  • a conventional support substrate with an inorganic film is subjected to a high temperature treatment at 450 ° C.
  • the support substrate 10 with an inorganic film of the present invention has a surface roughness Ra of the surface on the inorganic film 14 side of more than 2 nm, and the load length ratio of the load curve of the inorganic film 14 is 0% and 10%.
  • the difference in peak height at is set to 20 nm or less. That is, in the present invention, the surface roughness Ra of the surface on the inorganic film 14 side is increased to more than 2 nm, so that the glass substrate 16 communicates to the outside in the surface direction between the inorganic film 14 and the glass substrate 16.
  • a passage for the gas released from the inorganic film 14 can be formed.
  • the gas does not stay between the inorganic film 14 and the glass substrate 16, and bubbles are generated between the inorganic film 14 and the glass substrate 16. This can be suppressed.
  • the difference in the peak height between the load length ratio 0% and 10% of the load curve on the surface of the inorganic film 14 side of the support substrate 10 with the inorganic film is 20 nm or less.
  • FIG. 2 conceptually shows an example of a load curve created from a roughness curve obtained by measurement with an atomic force microscope (AFM) of a support substrate with an inorganic film.
  • the load curve (bearing curve / BAC) is the depth (height) and depth of a convex portion in a surface roughness curve created using, for example, AFM or the like for a surface having irregularities.
  • the probability density curve showing the relationship with the probability density is integrated and accumulated from the high convex part, the horizontal axis is the load length rate (cumulative probability frequency), and the vertical axis is the depth from the top (high Well, the height of the mountain).
  • FIG. 1 the load curve created from a roughness curve obtained by measurement with an atomic force microscope (AFM) of a support substrate with an inorganic film.
  • the load curve (bearing curve / BAC) is the depth (height) and depth of a convex portion in a surface roughness curve created using, for example, AFM or
  • the peak height difference d between the load length ratios 0% and 10% in this load curve is set to 20 nm or less.
  • the cutting level difference between the load length ratios 0% and 10% of the load curve is set to 20 nm or less.
  • the load curve is a load curve described in JIS B 0671-2: 2002.
  • the difference in peak height d between the load length ratios 0% and 10% of the load curve is 20 nm or less, which suppresses the convex portion having a low probability density on the surface of the inorganic film 14 on which the glass substrate 16 is laminated.
  • the difference in height between the protrusions is sufficiently small. That is, the height is uniform on the surface on the inorganic film 14 side. Therefore, even if the surface roughness Ra is large, there are few convex portions that obstruct the adhesion between the inorganic film 14 and the glass substrate 16, and the contact area between the inorganic film 14 and the glass substrate 16 can be sufficiently secured.
  • the adhesion between the inorganic film 14 and the glass substrate 16 can be ensured while suppressing the generation of bubbles between the inorganic film 14 and the glass substrate 16 due to the large surface roughness Ra.
  • the surface roughness Ra of the surface on the inorganic film 14 side is set to more than 2 nm, and the difference d of the peak height between the load length ratio 0% and 10% of the load curve is set to 20 nm or less, whereby the glass laminate 20 is formed.
  • the peelability after heat treatment at high temperature can also be improved.
  • the surface roughness Ra on the surface on the inorganic film 14 side is 2 nm or less, the gas released from the inorganic film 14 and the glass substrate 16 cannot be sufficiently discharged, and the inorganic substrate 14 is inorganic. Many bubbles are generated between the film 14 and the glass substrate 16.
  • the surface roughness Ra of the inorganic film 14 is such that bubbles between the inorganic film 14 and the glass substrate 16 can be more suitably suppressed, and the peelability after the glass laminate 20 is heat-treated at a high temperature can be improved. 2.2 nm or more is preferable and 3 nm or more is more preferable.
  • the surface roughness of the surface on the inorganic film 14 side is such that the adhesion between the inorganic film 14 and the glass substrate 16 can be more suitably improved, and the peelability after the glass laminate 20 is heat-treated at a high temperature can also be improved.
  • the thickness Ra is preferably 10 nm or less, and more preferably 5 nm or less.
  • the surface roughness Ra (arithmetic average roughness Ra) is measured using AFM, and may be measured according to JIS B 0601: 2001.
  • the inorganic film 14 and the glass substrate 16 are laminated. In this case, the two cannot be sufficiently contacted, and sufficient adhesion between the inorganic film 14 and the glass substrate 16 cannot be obtained.
  • the load length ratio of the load curve is 0% and 10 in that the adhesion between the inorganic film 14 and the glass substrate 16 can be made more suitable, and the peelability after the glass laminate 20 is heat-treated at a high temperature can be improved. More preferably, the difference d between the heights of the peaks in% is 10 nm or less.
  • the load length ratio of the load curve is such that bubbles between the inorganic film 14 and the glass substrate 16 can be more suitably suppressed, and the peelability after the glass laminate 20 is heat-treated at a high temperature can be improved.
  • the peak height difference d between 0% and 10% is preferably 0.1 nm or more.
  • the support substrate 10 with an inorganic film shown in FIG. 1 (A) and the glass laminate 20 shown in FIG. 1 (B) are manufactured.
  • An example of the manufacturing method of this invention is shown.
  • a glass plate or the like to be the support substrate 12 is prepared, and as shown in FIG. 3 (B), the inorganic film 14 is formed on one surface (one main surface).
  • a solid film 14a is formed.
  • a target film such as sputtering, vacuum deposition (room temperature, high temperature), CVD, plasma CVD, sol-gel coating, or the like is formed according to the type of the inorganic film 14 to be formed. Various known methods can be used if possible.
  • the surface roughness of the solid film 14a varies depending on the thickness of the solid film 14a, the film formation conditions, and the film formation method. Therefore, the thickness of the solid film 14a may be appropriately set according to the surface properties of the target inorganic film 14, the forming material of the inorganic film 14, and the like. In general, the thicker the solid film 14a, the rougher the surface.
  • the thickness of the solid film 14a is preferably 50 to 5000 nm, and more preferably 100 to 500 nm.
  • the support substrate 10 with an inorganic film having a peak height difference d of 0% and 10% on the load curve of 20 nm or less can be stably produced. Further, it is not desirable to unnecessarily increase the thickness of the solid film 14a from the viewpoints of stable production, reduction in productivity, and cost reduction, but this inconvenience can be avoided by setting the thickness of the solid film 14a to 500 nm or less. .
  • the surface of the formed solid film 14a is flattened to form the inorganic film 14, which is the support substrate 10 with an inorganic film of the present invention.
  • the height of the surface of the inorganic film 14 is made uniform, and the surface on the inorganic film 14 side of the support substrate 10 with the inorganic film has a surface roughness Ra of more than 2 nm and a load curve load.
  • the difference d of the peak height between the length ratio of 0% and 10% is set to 20 nm or less, a gas escape path is ensured between the inorganic film 14 and the glass substrate 16, and the glass substrate 16 of the support substrate 10 with the inorganic film is provided. And the contact area of the inorganic film 14 can be secured.
  • polishing is exemplified.
  • various known methods can be used according to the material for forming the solid film 14a.
  • wet brush polishing or pad polishing using a slurry in which loose abrasive grains are dispersed, dry or wet tape polishing using a tape having fixed abrasive grains, and the like are exemplified.
  • plasma dry processing such as ion bombardment or reactive ion etching can be used as ion bombardment or reactive ion etching can be used.
  • the polishing amount of the solid film 14a may be appropriately set according to the surface properties of the target inorganic film 14, the material for forming the inorganic film 14, the film thickness of the solid film 14a, and the like.
  • the inorganic film 14 preferably has a certain thickness. Therefore, the thickness of the inorganic film 14 is preferably 10 nm or more, particularly preferably 45 to 4500 nm, and preferably 90 to 450 nm.
  • the surface on the inorganic film 14 side can be more reliably provided with a surface roughness Ra of more than 2 nm and load height ratios of 0% and 10% on the load curve.
  • a glass substrate 16 is laminated on the inorganic film 14 of the support substrate 10 with an inorganic film to form a glass laminate 20 of the present invention.
  • various known methods can be used depending on the material for forming the inorganic film 14.
  • a method of pressure bonding using a roll or a press By pressure bonding with a roll or a press, the support substrate 10 with an inorganic film and the glass substrate 16 are preferably adhered with better adhesion.
  • pressure bonding by a vacuum laminating method or a vacuum pressing method can also be suitably used.
  • the surface roughness of the surface on the inorganic film 14 side of the support substrate 10 with an inorganic film is formed by forming an inorganic film 14 having unevenness on the surface of the planar support substrate 12.
  • Ra is over 2 nm
  • the peak height difference d between the load length ratio 0% and 10% of the load curve is 20 nm or less. That is, the surface roughness Ra of the surface on the inorganic film 14 side and the peak height difference d between the load length ratios 0% and 10% of the load curve are mainly due to the surface properties of the inorganic film 14. Yes.
  • the present invention is not limited to this, and by forming irregularities on the surface of the support substrate, the surface on the inorganic film 14 side has a surface roughness Ra of more than 2 nm and a load length ratio of 0% on the load curve.
  • the peak height difference d from 10% may be 20 nm or less. That is, the surface roughness Ra of the surface on the inorganic film 14 side and the peak height difference d between the load length ratio 0% and 10% of the load curve are mainly due to the surface properties of the support substrate. There may be. Further, the surface roughness Ra and the peak height difference d on the surface of the inorganic film 14 may be caused by both the surface properties of the inorganic film and the surface properties of the support substrate.
  • FIGS. 4 (A) to 4 (E) An example of this support substrate with an inorganic film, a glass laminate, and a method for producing the same is shown in FIGS. 4 (A) to 4 (E).
  • the surface of the glass plate G to be the support substrate 24 is subjected to a roughening treatment, and a glass plate 24a having irregularities formed on the surface.
  • a precipitate (reactant) with a glass component is formed on the surface of the glass plate by immersion in a treatment solution, and the glass is used as a mask.
  • the surface of the plate G may be roughened, and then the precipitate may be removed with a chemical solution or the like to produce a glass plate 24a having irregularities on the surface.
  • the glass plate produced by this is preferable because the unevenness of the surface is uniform.
  • the production of the glass plate 24a having unevenness by the roughening treatment is performed by known glass roughening, such as spraying of hydrogen fluoride gas at high temperature, dry or wet etching using a mask, polishing, blasting such as sandblasting, etc.
  • known glass roughening such as spraying of hydrogen fluoride gas at high temperature, dry or wet etching using a mask, polishing, blasting such as sandblasting, etc.
  • Various processes are available.
  • the roughening treatment is preferably performed so as to form unevenness of about 5 to 500 nm on the surface of the glass plate 24a, and more preferably performed so as to form unevenness of about 10 to 50 nm.
  • the surface on the inorganic film 26 side can be more reliably compared with the surface roughness Ra of more than 2 nm and the load length ratios of 0% and 10% of the load curve.
  • the peak height difference d can be reduced to 20 nm or less.
  • the surface roughening treatment is preferable in that the treatment liquid can be prevented from penetrating into the interface with the glass substrate 16 by washing or the like after forming the glass laminate 32 described later.
  • the surface of the roughened glass plate 24a is flattened as necessary, the surface roughness Ra is more than 2 nm, and the load length ratio of the load curve is 0%.
  • a support substrate 24 having a surface with a peak height difference d of 10% and 20 nm or less is produced.
  • Various known methods can be used to flatten the surface of the glass plate 24a.
  • polishing is exemplified.
  • polishing method various known methods can be used depending on the forming material of the glass plate 24a and the like.
  • wet brush polishing using a slurry in which loose abrasive grains are dispersed dry or wet tape polishing using a tape having fixed abrasive grains, and the like are exemplified.
  • plasma dry processing such as ion bombardment or reactive ion etching can be used.
  • an inorganic film 26 is formed on the surface of the support substrate 24 to obtain a support substrate 30 with an inorganic film of the present invention.
  • the surface roughness Ra of the surface of the support substrate 24 is more than 2 nm, and the peak height difference d between the load length ratio 0% and 10% of the load curve is 20 nm or less. Therefore, the surface on the inorganic film 26 side of the support substrate 30 with the inorganic film 26 on which the inorganic film 26 is formed also follows this, the surface roughness Ra exceeds 2 nm, and the load length ratios of the load curve are 0% and 10%.
  • the difference d in the height of the peaks at and is 20 nm or less.
  • the inorganic film 26 may be formed by a known method corresponding to the inorganic film 26 to be formed, as in the previous case.
  • membrane 26 suitably according to the surface property of the support substrate 24, the formation material of the inorganic film
  • the thickness of the inorganic film 26 is preferably 10 to 60 nm, and more preferably 10 to 40 nm.
  • the thickness of the inorganic film 26 By setting the thickness of the inorganic film 26 within the above range, the surface on the inorganic film 26 side can be more surely obtained when the surface roughness Ra exceeds 2 nm and the load curve has a load length ratio of 0% and 10%.
  • the height difference d is preferably 20 nm or less, the productivity of the support substrate 30 with an inorganic film can be improved, and the cost of the support substrate 30 with an inorganic film can be reduced.
  • the glass substrate 16 is laminated on the inorganic film 26 of the support substrate 30 with the inorganic film to form the glass laminate 32 of the present invention.
  • the glass substrate 16 may be laminated by a known method as described above.
  • the surface on the inorganic film side of the support substrate with an inorganic film has a surface roughness Ra of more than 2 nm and the load length of the load curve.
  • the peak height difference d between the rate of 0% and 10% may be 20 nm or less.
  • the surface of the glass plate G to be the support substrate 36 is roughened to form irregularities on the surface, thereby supporting A substrate 36 is produced.
  • the roughening treatment may be performed by a known method as in the example shown in FIG.
  • the unevenness of the surface of the support substrate 36 is made uniform by a method using a mask or the like.
  • the roughening treatment is preferably performed so that the original surface of the glass plate G partially remains.
  • the degree of roughening of the glass plate G, that is, the surface property of the support substrate 36 may be set as appropriate according to the surface property of the target inorganic film 38, the material for forming the inorganic film 38, and the like.
  • the roughening treatment is preferably performed so as to form unevenness of about 5 to 500 nm on the surface of the support substrate 36, and more preferably performed to form unevenness of about 10 to 100 nm.
  • the surface on the inorganic film 38 side of the support substrate with an inorganic film can be more reliably provided with a surface roughness Ra of more than 2 nm and a load length ratio of 0 on the load curve.
  • the difference d of the peak height between% and 10% can be set to 20 nm or less, and the treatment liquid can be prevented from penetrating into the interface with the glass substrate 16 by washing or the like after forming the glass laminate 42 described later.
  • a solid film 38 a that becomes the inorganic film 38 is formed on the surface of the support substrate 36.
  • the solid film 38a may be formed by a known method as in the previous example.
  • the thickness of the solid film 38a may be appropriately set according to the surface properties of the target inorganic film 38, the material for forming the inorganic film 38, and the like.
  • the inorganic film 38 is formed by flattening the solid film 38a.
  • the thickness of the inorganic film 38 is preferably 10 to 60 nm, and more preferably 10 to 40 nm.
  • the thickness of the solid film 38a is preferably 20 to 70 nm, and more preferably 20 to 50 nm so that the thickness of the inorganic film 38 after planarization can be controlled within the above range.
  • the surface of the solid film 38a is flattened to form the inorganic film 38, thereby forming the support substrate 40 with an inorganic film of the present invention.
  • the surface on the inorganic film 38 side of the support substrate 40 with the inorganic film has a surface roughness Ra of more than 2 nm, and a peak height difference d between the load length ratios of 0% and 10% of the load curve is 20 nm.
  • the flattening of the solid film 38a may be performed by a known method as in the previous example.
  • the polishing amount of the solid film 38a may be appropriately set according to the surface properties of the target inorganic film 38, the material for forming the inorganic film 38, the thickness of the solid film 38a, and the like.
  • the thickness of the inorganic film 38 may be appropriately set according to the surface properties of the support substrate 36, the material for forming the inorganic film 38, and the like.
  • the thickness of the inorganic film 38 is preferably 10 to 60 nm, and more preferably 10 to 40 nm.
  • the thickness of the inorganic film 38 By setting the thickness of the inorganic film 38 within the above range, the surface on the inorganic film 38 side can be more reliably measured with a surface roughness Ra of more than 2 nm and load length ratios of 0% and 10% on the load curve.
  • the height difference d can be 20 nm or less, the productivity of the support substrate 40 with an inorganic film can be improved, and the cost of the support substrate 30 with an inorganic film can be reduced.
  • the glass substrate 16 is laminated on the inorganic film 38 of the support substrate 40 with the inorganic film to form the glass laminate 42 of the present invention.
  • the glass substrate 16 may be laminated by a known method as described above.
  • Such a support substrate with an inorganic film and a glass laminate of the present invention include an LCD, an OLED, an electronic paper, a plasma display panel, a field emission panel, a quantum dot LED panel, a MEMS (Micro Electro Mechanical Systems), an electronic device such as a shutter panel. It is suitably used for manufacturing devices.
  • the electronic device manufacturing method of the present invention is an electronic device manufacturing method using the glass laminate manufacturing method of the present invention.
  • the electronic device manufacturing method of the present invention manufactures a glass laminate including a support substrate with an inorganic film and a glass substrate by the manufacturing method of the present invention, and an LCD, an OLED, or the like is formed on the surface of the glass substrate.
  • An electronic device member is formed, and the support substrate with an inorganic film is peeled off from the glass laminate formed by forming the electronic device member to obtain an electronic device having a glass substrate and an electronic device component.
  • the electronic device member may be a member corresponding to the electronic device to be manufactured by a known method corresponding to the electronic device to be manufactured.
  • the support substrate with an inorganic film and the glass laminate, and the manufacturing method and the manufacturing method of the electronic device of the present invention have been described in detail.
  • the present invention is not limited to the above-described examples, and the gist of the present invention.
  • various improvements and changes may be made without departing from the scope of the present invention.
  • Example 1 A glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a thickness of 300 mm and a thickness of 0.5 mm was prepared as a glass plate serving as a support substrate. The surface of the glass plate was roughened by blowing hydrogen fluoride gas while heating the surface of the glass plate to about 580 ° C.
  • the surface roughness Ra of the surface of the roughened glass plate and the difference in peak height between the load length ratio 0% and 10% of the load curve (hereinafter also referred to as “Sdc (0-10%)”) AFM (manufactured by Hitachi High-Tech Science Co., Ltd., SPA400) was used for measurement. As a result, the surface roughness Ra was 16 nm, and Sdc (0-10%) was 79 nm.
  • a glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.2 mm was prepared.
  • the roughened glass plate and glass substrate were washed well and the roughened surface was brought into contact with each other to laminate them. However, the roughened glass plate and the glass substrate could not be laminated.
  • the surface of the roughened glass plate is polished for 30 seconds using a slurry in which aluminum oxide abrasive grains having a particle size of # 8000 (JIS R6001: 1998) are dispersed and a urethane disc brush, and is then supported.
  • an indium cerium oxide film having a thickness of 20 nm was formed as an inorganic film on the surface of the prepared support substrate by sputtering, thereby preparing a support substrate with an inorganic film.
  • the surface roughness Ra and Sdc (0-10%) of the surface of the prepared support substrate with an inorganic film on the inorganic film side were measured. As a result, the surface roughness Ra was 3.55 nm, and Sdc (0-10%) was 9.58 nm.
  • the support substrate with an inorganic film and the glass substrate were washed thoroughly, and the inorganic film forming surface was brought into contact with each other to laminate them to obtain a glass laminate.
  • the support substrate with an inorganic film and the glass substrate adhered well, and no bubbles were generated.
  • the support substrate with an inorganic film and the glass substrate were easily peeled off.
  • the glass laminate was cut into 100 ⁇ 200 mm, washed again, and heat-treated at 600 ° C. for 1 hour. When the glass laminate was confirmed after the heat treatment, no bubbles were generated inside. Furthermore, when the support substrate with an inorganic film and the glass substrate were peeled off after the heat treatment, they were peeled off with the same force as before the heat treatment.
  • Example 2 As a support substrate, a glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.5 mm was prepared. A 450 nm thick indium tin oxide film was formed as a solid film on the surface of the support substrate by sputtering. In the same manner as in Example 1, the surface roughness Ra and Sdc (0-10%) of the surface of the solid film were measured. As a result, the surface roughness Ra was 6.6 nm, and Sdc (0-10%) was 21 nm.
  • a glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.2 mm was prepared.
  • the support substrate and the glass substrate on which the solid film was formed were thoroughly washed and the solid film surface was brought into contact with each other to laminate them.
  • the support substrate on which the solid film was formed and the glass substrate could not be laminated.
  • the surface of the solid film of the support substrate on which the solid film was formed was polished by 10 nm using colloidal silica having a particle size of 80 nm and a brush to prepare a support substrate with an inorganic film.
  • the surface roughness Ra and Sdc (0-10%) of the surface of the prepared support substrate with an inorganic film on the inorganic film side were measured.
  • the surface roughness Ra was 2.3 nm
  • Sdc (0-10%) was 3 nm.
  • the support substrate with an inorganic film and the glass substrate were washed well, and the inorganic film surface was brought into contact with each other to laminate them to obtain a glass laminate.
  • the support substrate with an inorganic film and the glass substrate adhered well, and no bubbles were generated.
  • the support substrate with an inorganic film and the glass substrate were easily peeled off.
  • the glass laminate was cut into 100 ⁇ 200 mm, washed again, and heat-treated at 600 ° C. for 1 hour. When the glass laminate was confirmed after the heat treatment, no bubbles were generated inside. Furthermore, when the support substrate with an inorganic film and the glass substrate were peeled off after the heat treatment, they were peeled off with the same force as before the heat treatment.
  • Example 3 A glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a thickness of 300 mm and a thickness of 0.5 mm was prepared as a glass plate serving as a support substrate. While heating the surface of this glass plate to about 580 ° C., hydrogen fluoride gas was blown to roughen the surface to produce a support substrate. In the same manner as in Example 1, the surface roughness Ra and Sdc (0-10%) of the surface of the support substrate were measured. As a result, the surface roughness Ra was 16 nm, and Sdc (0-10%) was 79 nm.
  • a glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.2 mm was prepared.
  • the support substrate and the glass substrate were washed well and the roughened surfaces were brought into contact with each other to laminate them. However, the support substrate and the glass substrate could not be laminated.
  • a 20 nm thick indium cerium oxide film was formed as a solid film on the surface of the supporting substrate by sputtering. Further, the surface of the solid film is polished for 10 seconds using a slurry in which aluminum oxide abrasive grains having a particle size of # 8000 (JIS R6001: 1998) are dispersed and a urethane disk brush to form an inorganic film. Thus, a support substrate with an inorganic film was produced.
  • the surface roughness Ra and Sdc (0-10%) of the surface of the prepared support substrate with an inorganic film on the inorganic film side were measured. As a result, the surface roughness Ra was 2.3 nm, and Sdc (0-10%) was 19.7 nm.
  • the support substrate with an inorganic film and the glass substrate were washed well, and the inorganic film surface was brought into contact with each other to laminate them to obtain a glass laminate.
  • the support substrate with an inorganic film and the glass substrate adhered well, and no bubbles were generated.
  • the support substrate with an inorganic film and the glass substrate were easily peeled off.
  • the glass laminate was cut into 100 ⁇ 200 mm, washed again, and heat-treated at 600 ° C. for 1 hour. When the glass laminate was confirmed after the heat treatment, no bubbles were generated inside. Furthermore, when the support substrate with an inorganic film and the glass substrate were peeled off after the heat treatment, they were peeled off with the same force as before the heat treatment.
  • Example 1 A glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a thickness of 300 ⁇ 300 mm and a thickness of 0.5 mm was prepared. On the surface of this glass plate, an indium cerium oxide film having a thickness of 20 nm was formed as an inorganic film by sputtering to produce a support substrate with an inorganic film. In the same manner as in Example 1, the surface roughness Ra and Sdc (0-10%) of the surface of the prepared support substrate with an inorganic film on the inorganic film side were measured. As a result, the surface roughness Ra was 0.3 nm, and Sdc (0-10%) was 13 nm.
  • a glass plate made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.2 mm was prepared.
  • the inorganic film-supported substrate and the glass substrate were thoroughly washed, and the inorganic film surface was brought into contact therewith to laminate them to obtain a glass laminate.
  • the support substrate with an inorganic film and the glass substrate adhered well, and no bubbles were generated.
  • the support substrate with an inorganic film and the glass substrate were easily peeled off.
  • the glass laminate was cut into 100 ⁇ 200 mm, washed again, and heat-treated at 600 ° C. for 1 hour. When the glass laminate was confirmed after the heat treatment, many bubbles were generated inside. Furthermore, when the support substrate with an inorganic film and the glass substrate were peeled off after the heat treatment, they were peeled off with the same force as before the heat treatment.
  • Example 2 Glass plate with a urethane disk brush using a slurry in which aluminum oxide abrasive grains having a particle size of # 8000 (JIS R6001: 1998) are dispersed after the surface of the glass plate is roughened with hydrogen fluoride gas.
  • a support substrate with an inorganic film having a film made of indium cerium oxide as an inorganic film was prepared in the same manner as in Example 1 except that the above polishing was not performed.
  • the surface roughness Ra and Sdc (0-10%) of the surface of the prepared support substrate with an inorganic film on the inorganic film side were measured. As a result, the surface roughness Ra was 16 nm, and Sdc (0-10%) was 79 nm.
  • a glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.2 mm was prepared.
  • the inorganic film-supported substrate and the glass substrate were thoroughly washed, and the inorganic film surface was brought into contact with each other to laminate them.
  • the support substrate with an inorganic film and the glass substrate could not be properly laminated, and a glass laminate could not be produced.
  • Example 3 After forming an indium cerium oxide film by sputtering, polishing the indium cerium oxide film with a urethane disk brush using a slurry in which aluminum oxide abrasive grains having a particle size of # 8000 (JIS R6001: 1998) are dispersed. A support substrate with an inorganic film was produced in the same manner as in Example 3 except that this was not performed. In the same manner as in Example 1, the surface roughness Ra and Sdc (0-10%) of the surface of the prepared support substrate with an inorganic film on the inorganic film side were measured. As a result, the surface roughness Ra was 21 nm, and Sdc (0-10%) was 103 nm.
  • a glass plate (AN100 manufactured by Asahi Glass Co., Ltd.) made of non-alkali borosilicate glass having a size of 300 ⁇ 300 mm and a thickness of 0.2 mm was prepared.
  • the inorganic film-supported substrate and the glass substrate were thoroughly washed, and the inorganic film surface was brought into contact with each other to laminate them.
  • the support substrate with an inorganic film and the glass substrate could not be properly laminated, and a glass laminate could not be produced.
  • ICO means indium cerium oxide
  • ITO indium tin oxide.

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Abstract

L'invention a pour objet de fournir un substrat de support (10) avec pellicule inorganique tel que le moussage entre un substrat de verre (16) et une pellicule inorganique (14) lors d'un traitement à haute température, est inhibé, et l'adhérence entre cette pellicule inorganique (14) et ce substrat de verre (16) est satisfaisante. Plus précisément, l'invention concerne un substrat de support (10) avec pellicule inorganique qui est caractéristique en ce que sa surface côté pellicule inorganique (14) présente une rugosité superficielle (Ra) supérieure à 2nm, et la différence entre les hauteurs de sommets pour une longueur de charge de 0% et 10% dans un diagramme de charge, est inférieure ou égale à 20nm.
PCT/JP2015/071388 2014-08-01 2015-07-28 Substrat de support avec pellicule inorganique ainsi que stratifié de verre, procédé de fabrication de ceux-ci, et procédé de fabrication de dispositif électronique WO2016017645A1 (fr)

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CN201580041401.4A CN106573443B (zh) 2014-08-01 2015-07-28 带无机膜的支撑基板及玻璃层叠体、以及它们的制造方法及电子器件的制造方法
KR1020177001691A KR20170039135A (ko) 2014-08-01 2015-07-28 무기막을 구비한 지지 기판 및 유리 적층체, 그리고, 그것들의 제조 방법 및 전자 디바이스의 제조 방법
JP2016538369A JPWO2016017645A1 (ja) 2014-08-01 2015-07-28 無機膜付き支持基板およびガラス積層体、ならびに、それらの製造方法および電子デバイスの製造方法

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11298030A (ja) * 1998-04-15 1999-10-29 Asahi Glass Co Ltd 太陽電池用カバーガラス及びその製造方法並びに太陽電池
JP2000241804A (ja) * 1999-02-23 2000-09-08 Nec Kagoshima Ltd 表示装置製造用治具及びそれを用いた表示装置の製造方法
JP2009087860A (ja) * 2007-10-02 2009-04-23 Fuji Electric Holdings Co Ltd 有機ｅｌディスプレイパネルおよびその製造方法
JP2009164198A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置の製造方法
WO2011048979A1 (fr) * 2009-10-20 2011-04-28 旭硝子株式会社 Stratifié de verre, procédé de fabrication d'un stratifié de verre, procédé de fabrication d'un panneau d'affichage et panneau d'affichage obtenu au moyen d'un procédé de fabrication de panneau d'affichage
WO2011086991A1 (fr) * 2010-01-12 2011-07-21 日本電気硝子株式会社 Produit stratifié de feuille mince de verre, procédé de fabrication associé ainsi que procédé de fabrication d'une feuille mince de verre
JP2011201725A (ja) * 2010-03-25 2011-10-13 Nippon Electric Glass Co Ltd ガラス基板の製造方法
WO2013179881A1 (fr) * 2012-05-29 2013-12-05 旭硝子株式会社 Stratifié en verre et procédé de fabrication d'un dispositif électronique
WO2014027546A1 (fr) * 2012-08-13 2014-02-20 旭硝子株式会社 Substrat de verre et procédé de fabrication de substrat de verre
WO2014087877A1 (fr) * 2012-12-07 2014-06-12 信越化学工業株式会社 Substrat d'interposeur et procédé permettant de fabriquer ce dernier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101730901B1 (ko) 2009-09-18 2017-04-27 니폰 덴키 가라스 가부시키가이샤 유리 필름의 제조 방법, 유리 필름의 처리 방법 및 유리 필름 적층체
CN103730382B (zh) * 2013-12-24 2016-08-24 华进半导体封装先导技术研发中心有限公司 一种铜铜键合凸点的制作方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11298030A (ja) * 1998-04-15 1999-10-29 Asahi Glass Co Ltd 太陽電池用カバーガラス及びその製造方法並びに太陽電池
JP2000241804A (ja) * 1999-02-23 2000-09-08 Nec Kagoshima Ltd 表示装置製造用治具及びそれを用いた表示装置の製造方法
JP2009087860A (ja) * 2007-10-02 2009-04-23 Fuji Electric Holdings Co Ltd 有機ｅｌディスプレイパネルおよびその製造方法
JP2009164198A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置の製造方法
WO2011048979A1 (fr) * 2009-10-20 2011-04-28 旭硝子株式会社 Stratifié de verre, procédé de fabrication d'un stratifié de verre, procédé de fabrication d'un panneau d'affichage et panneau d'affichage obtenu au moyen d'un procédé de fabrication de panneau d'affichage
WO2011086991A1 (fr) * 2010-01-12 2011-07-21 日本電気硝子株式会社 Produit stratifié de feuille mince de verre, procédé de fabrication associé ainsi que procédé de fabrication d'une feuille mince de verre
JP2011201725A (ja) * 2010-03-25 2011-10-13 Nippon Electric Glass Co Ltd ガラス基板の製造方法
WO2013179881A1 (fr) * 2012-05-29 2013-12-05 旭硝子株式会社 Stratifié en verre et procédé de fabrication d'un dispositif électronique
WO2014027546A1 (fr) * 2012-08-13 2014-02-20 旭硝子株式会社 Substrat de verre et procédé de fabrication de substrat de verre
WO2014087877A1 (fr) * 2012-12-07 2014-06-12 信越化学工業株式会社 Substrat d'interposeur et procédé permettant de fabriquer ce dernier

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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US10538452B2 (en) 2012-12-13 2020-01-21 Corning Incorporated Bulk annealing of glass sheets
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US9889635B2 (en) 2012-12-13 2018-02-13 Corning Incorporated Facilitated processing for controlling bonding between sheet and carrier
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
US10046542B2 (en) 2014-01-27 2018-08-14 Corning Incorporated Articles and methods for controlled bonding of thin sheets with carriers
US11123954B2 (en) 2014-01-27 2021-09-21 Corning Incorporated Articles and methods for controlled bonding of thin sheets with carriers
US11192340B2 (en) 2014-04-09 2021-12-07 Corning Incorporated Device modified substrate article and methods for making
US11660841B2 (en) 2015-05-19 2023-05-30 Corning Incorporated Articles and methods for bonding sheets with carriers
US11167532B2 (en) 2015-05-19 2021-11-09 Corning Incorporated Articles and methods for bonding sheets with carriers
US11905201B2 (en) 2015-06-26 2024-02-20 Corning Incorporated Methods and articles including a sheet and a carrier
US11097509B2 (en) 2016-08-30 2021-08-24 Corning Incorporated Siloxane plasma polymers for sheet bonding
US12122138B2 (en) 2016-08-30 2024-10-22 Corning Incorporated Siloxane plasma polymers for sheet bonding
US11535553B2 (en) 2016-08-31 2022-12-27 Corning Incorporated Articles of controllably bonded sheets and methods for making same
WO2018154915A1 (fr) * 2017-02-23 2018-08-30 Ａｇｃ株式会社 Élément fixé à un film non transparent
US11999135B2 (en) 2017-08-18 2024-06-04 Corning Incorporated Temporary bonding using polycationic polymers
WO2019049748A1 (fr) * 2017-09-05 2019-03-14 旭化成株式会社 Feuille poreuse et son procédé de production
JPWO2019049748A1 (ja) * 2017-09-05 2020-07-30 旭化成株式会社 多孔質シート及びその製造方法
US11331692B2 (en) 2017-12-15 2022-05-17 Corning Incorporated Methods for treating a substrate and method for making articles comprising bonded sheets
JP6664038B1 (ja) * 2018-05-29 2020-03-13 堺ディスプレイプロダクト株式会社 フレキシブル発光デバイス及びその製造方法、並びにフレキシブル照明装置の製造装置
WO2019229843A1 (fr) * 2018-05-29 2019-12-05 堺ディスプレイプロダクト株式会社 Dispositif électroluminescent flexible, son procédé et son dispositif de fabrication
WO2023032961A1 (fr) * 2021-09-06 2023-03-09 日本電気硝子株式会社 Élément en verre, dispositif d'entrée, dispositif d'entrée par stylo, appareil mobile et procédé de fabrication d'élément en verre

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JPWO2016017645A1 (ja) 2017-07-06

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