WO2015169022A1 - Oled发光器件及其制备方法、显示装置 - Google Patents
Oled发光器件及其制备方法、显示装置 Download PDFInfo
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- WO2015169022A1 WO2015169022A1 PCT/CN2014/086793 CN2014086793W WO2015169022A1 WO 2015169022 A1 WO2015169022 A1 WO 2015169022A1 CN 2014086793 W CN2014086793 W CN 2014086793W WO 2015169022 A1 WO2015169022 A1 WO 2015169022A1
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- small molecule
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- molecule organic
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- electrode
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000010410 layer Substances 0.000 claims abstract description 106
- 239000011368 organic material Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000002346 layers by function Substances 0.000 claims abstract description 20
- 150000003384 small molecules Chemical class 0.000 claims description 152
- 239000012044 organic layer Substances 0.000 claims description 135
- 230000009477 glass transition Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 description 27
- 239000011521 glass Substances 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 101100207325 Arabidopsis thaliana TPPE gene Proteins 0.000 description 4
- 101000679365 Homo sapiens Putative tyrosine-protein phosphatase TPTE Proteins 0.000 description 4
- 102100022578 Putative tyrosine-protein phosphatase TPTE Human genes 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Definitions
- the cover layer includes a second small molecule organic layer and a third small molecule organic layer having a non-flat upper surface above the second small molecule organic layer, the second small molecule organic layer and the first
- the difference in refractive index of the three small molecule organic layers is less than 0.1.
- the non-flat upper surface of the third small molecule organic layer is obtained by crystallizing a third small molecule organic material in the third small molecule organic layer
- the second small molecule organic material in the second small molecule organic layer has a glass transition temperature greater than a glass transition temperature of the third small molecule organic material in the third small molecule organic layer.
- a display device comprising the OLED light emitting device as described above.
- the forming the cap layer comprises: sequentially forming a second small molecule organic layer and a third small molecule organic layer on the substrate on which the second electrode is formed; wherein the second small molecule organic layer is the second small
- the glass transition temperature of the molecular organic material is greater than the glass transition temperature of the third small molecule organic material in the third small molecule organic layer; after being encapsulated, according to the glass transition temperature of the third small molecule organic material, The three small molecule organic layer is heated to crystallize the third small molecule organic material in the third small molecule organic layer.
- FIG. 1 is a schematic structural diagram of an OLED light emitting device according to an embodiment of the present invention.
- the second small molecule organic material in the second small molecule organic layer 503 may have a glass transition temperature of more than 120 ° C, and the material may be, for example, TPTE, TPPE or the like.
- the third small molecule organic layer 504 is formed to have a flat surface, only After the third small molecule organic layer 504 is heated and the heating temperature reaches the glass transition temperature of the third small molecule organic material, the third small molecule organic layer 504 is crystallization due to crystallization of the third small molecule organic material.
- the surface has a non-flat shape.
- the third small molecule organic material of the third small molecule organic layer 504 is heated and crystallized, and only the third small molecule organic material is converted from amorphous to glass state to perform a certain degree of crystallization.
- the substance itself is not changed, so whether it is before or after crystallization, it is referred to as a third small molecule organic layer 504 in the embodiment of the present invention.
- the second electrode 400 of the metal material underneath is damaged, and the second small molecule organic layer 503 is the second small molecule organic
- the glass transition temperature of the material is higher than the glass transition temperature of the third small molecule organic material in the third small molecule organic layer 504, and in the process of heating and crystallizing the third small molecule organic layer 504, It is ensured that the selection of the heating temperature is smaller than the glass transition temperature of the second small molecule organic material in the second small molecule organic layer 503.
- the embodiment of the invention further provides a display device comprising the above OLED light emitting device 10.
- the display device provided by the embodiment of the present invention is an active matrix display device. That is, as shown in FIG. 4, the display device further includes a thin film transistor 600 disposed between the base substrate 100 and the first electrode 200 of the OLED light emitting device.
- the second mode as shown in FIG. 5, in the vacuum chamber, the second small molecule organic layer 503 and the third small molecule organic layer 504 are sequentially evaporated on the substrate on which the second electrode 400 is formed;
- the glass transition temperature of the second small molecule organic material in the second small molecule organic layer 503 is greater than the glass transition temperature of the third small molecule organic material in the third small molecule organic layer 504.
- the substrate is encapsulated, and then the third small molecule organic layer 504 is heated according to the glass transition temperature of the third small molecule organic material to make the third small molecule organic layer
- the third small molecule organic material in 504 is crystallized.
- the embodiment of the present invention further provides a method for fabricating an OLED display device.
- the method includes: sequentially forming a thin film transistor 600, a first electrode 200, an organic material functional layer 300, and a transparent layer on the substrate substrate 100. Or a semi-transparent second electrode 400, and a cover layer 500 on a side of the second electrode 400 away from the base substrate 100; wherein the cover layer 500 is not flat from a surface of the base substrate 100.
- the forming the cap layer 500 may further include: in the vacuum chamber, sequentially depositing the first small molecule organic layer 501 and the plurality of substrates on the substrate on which the second electrode 400 is formed.
- the crystalline organic layer 502 has a difference in refractive index between the first small molecule organic layer 501 and the polymorphic organic 502 layer of less than 0.1.
- the second mode as shown in FIG. 5, in the vacuum chamber, the second small molecule organic layer 503 and the third small molecule organic layer 504 are sequentially evaporated on the substrate on which the second electrode 400 is formed;
- the glass transition temperature of the second small molecule organic material in the second small molecule organic layer 503 is greater than the glass transition temperature of the third small molecule organic material in the third small molecule organic layer 504.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
- 一种OLED发光器件,包括:衬底基板,依次设置在所述衬底基板上的第一电极、有机材料功能层、透明或半透明的第二电极,以及位于所述第二电极远离所述衬底基板一侧的覆盖层;其中,所述覆盖层远离所述衬底基板的表面非平坦。
- 根据权利要求1所述的OLED发光器件,其中所述覆盖层包括多晶型有机层。
- 根据权利要求2所述的OLED发光器件,其中所述覆盖层包括第一小分子有机层和位于所述第一小分子有机层上方的所述多晶型有机层,所述第一小分子有机层和所述多晶型有机层的折射率的差值小于0.1。
- 根据权利要求1所述的OLED发光器件,其中所述覆盖层包括第二小分子有机层和位于所述第二小分子有机层上方且具有非平坦上表面的第三小分子有机层,所述第二小分子有机层和所述第三小分子有机层的折射率的差值小于0.1;其中,所述第三小分子有机层的非平坦的上表面是对第三小分子有机层中第三小分子有机材料进行晶化后得到的;所述第二小分子有机层中第二小分子有机材料的玻璃化温度大于所述第三小分子有机层中第三小分子有机材料的玻璃化温度。
- 根据权利要求1至4任一项所述的OLED发光器件,其中所述第一电极包括不透明金属层,所述第二电极包括半透明金属层。
- 一种显示装置,包括权利要求1至5任一项所述的OLED发光器件。
- 根据权利要求6所述的显示装置,还包括设置在衬底基板和所述OLED发光器件的第一电极之间的薄膜晶体管。
- 根据权利要求7所述的显示装置,其中所述第一电极与所述薄膜晶体管的漏极电连接。
- 一种OLED发光器件的制备方法,包括:在衬底基板上依次形成第一电极、有机材料功能层、透明或半透明的第二电极,以及位于所述第二电极远离所述衬底基板一侧的覆盖层;其中,所述覆盖层远离所述衬底基板的表面非平坦。
- 根据权利要求9所述的方法,其中所述形成覆盖层包括:在形成有所述第二电极的基板上形成多晶型有机层。
- 根据权利要求10所述的方法,其中所述形成覆盖层包括:在形成有所述第二电极的基板上依次形成第一小分子有机层和所述多晶型有机层,且所述第一小分子有机层和所述多晶型有机层的折射率的差值小于0.1。
- 根据权利要求9所述的方法,其中所述形成覆盖层包括:在形成有所述第二电极的基板上依次形成第二小分子有机层和第三小分子有机层;其中,所述第二小分子有机层中第二小分子有机材料的玻璃化温度大于所述第三小分子有机层中第三小分子有机材料的玻璃化温度;待封装后,根据所述第三小分子有机材料的玻璃化温度,对所述第三小分子有机层进行加热,使所述第三小分子有机层中的第三小分子有机材料晶化。
- 根据权利要求12所述的方法,其中所述第二小分子有机材料的玻璃化温度为大于120℃;所述第三小分子有机材料的玻璃化温度为60~100℃。
- 根据权利要求9至13任一项所述的方法,其中所述第一电极包括不透明金属层,所述第二电极包括半透明金属层。
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US14/436,550 US9818810B2 (en) | 2014-05-08 | 2014-09-18 | OLED and fabrication method thereof, and display apparatus |
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CN201410191903.2A CN103972415B (zh) | 2014-05-08 | 2014-05-08 | 一种oled发光器件及其制备方法、显示装置 |
CN201410191903.2 | 2014-05-08 |
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US (1) | US9818810B2 (zh) |
CN (1) | CN103972415B (zh) |
WO (1) | WO2015169022A1 (zh) |
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CN103972415B (zh) | 2014-05-08 | 2015-09-02 | 京东方科技集团股份有限公司 | 一种oled发光器件及其制备方法、显示装置 |
CN106158906A (zh) * | 2015-04-24 | 2016-11-23 | 上海和辉光电有限公司 | 显示面板结构及制作方法 |
CN105355798A (zh) * | 2015-11-25 | 2016-02-24 | 京东方科技集团股份有限公司 | 有机电致发光器件及其制作方法、显示装置 |
CN110098345B (zh) * | 2019-04-17 | 2020-11-06 | 深圳市华星光电半导体显示技术有限公司 | 有机发光二极管显示器及其制造方法 |
US20230397470A1 (en) * | 2022-06-03 | 2023-12-07 | Meta Platforms Technologies, Llc | Oled with osc capping layer |
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CN1551693A (zh) * | 2003-05-16 | 2004-12-01 | ��ʽ��������Զ�֯�������� | 发光装置及其制造方法 |
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CN103972415A (zh) * | 2014-05-08 | 2014-08-06 | 京东方科技集团股份有限公司 | 一种oled发光器件及其制备方法、显示装置 |
CN203812920U (zh) * | 2014-05-08 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种oled发光器件及显示装置 |
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US6777871B2 (en) * | 2000-03-31 | 2004-08-17 | General Electric Company | Organic electroluminescent devices with enhanced light extraction |
JP4947095B2 (ja) * | 2009-06-16 | 2012-06-06 | 住友化学株式会社 | 光取り出し構造体 |
TWI540939B (zh) * | 2010-09-14 | 2016-07-01 | 半導體能源研究所股份有限公司 | 固態發光元件,發光裝置和照明裝置 |
US8764504B2 (en) * | 2011-02-25 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
KR101842586B1 (ko) * | 2011-04-05 | 2018-03-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102112844B1 (ko) * | 2013-10-15 | 2020-05-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조방법 |
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- 2014-05-08 CN CN201410191903.2A patent/CN103972415B/zh active Active
- 2014-09-18 US US14/436,550 patent/US9818810B2/en active Active
- 2014-09-18 WO PCT/CN2014/086793 patent/WO2015169022A1/zh active Application Filing
Patent Citations (4)
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CN1551693A (zh) * | 2003-05-16 | 2004-12-01 | ��ʽ��������Զ�֯�������� | 发光装置及其制造方法 |
CN101853877A (zh) * | 2009-02-09 | 2010-10-06 | 三星移动显示器株式会社 | 有机发光二极管显示器 |
CN103972415A (zh) * | 2014-05-08 | 2014-08-06 | 京东方科技集团股份有限公司 | 一种oled发光器件及其制备方法、显示装置 |
CN203812920U (zh) * | 2014-05-08 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种oled发光器件及显示装置 |
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US9818810B2 (en) | 2017-11-14 |
CN103972415B (zh) | 2015-09-02 |
CN103972415A (zh) | 2014-08-06 |
US20160141343A1 (en) | 2016-05-19 |
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