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WO2015102342A1 - Dicing film and dicing die bonding film - Google Patents

Dicing film and dicing die bonding film Download PDF

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Publication number
WO2015102342A1
WO2015102342A1 PCT/KR2014/012981 KR2014012981W WO2015102342A1 WO 2015102342 A1 WO2015102342 A1 WO 2015102342A1 KR 2014012981 W KR2014012981 W KR 2014012981W WO 2015102342 A1 WO2015102342 A1 WO 2015102342A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
dicing
adhesive layer
resin
weight
Prior art date
Application number
PCT/KR2014/012981
Other languages
French (fr)
Korean (ko)
Inventor
김세라
조정호
김영국
김희정
이광주
김정학
남승희
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140190448A external-priority patent/KR101722137B1/en
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to US14/781,537 priority Critical patent/US9761476B2/en
Priority to JP2016562716A priority patent/JP6348986B2/en
Priority to CN201480031647.9A priority patent/CN105264033B/en
Publication of WO2015102342A1 publication Critical patent/WO2015102342A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to a dicing film and a dicing die-bonding film, and more particularly, a dicing film and dicing capable of improving pick-up property and preventing damage to a thinned semiconductor chip during a dicing process of a semiconductor packaging process.
  • Dicing die film containing a film and a dicing method of a semiconductor wafer using the said dicing die bonding film.
  • the manufacturing process of the semiconductor chip includes a process of forming a fine pattern on the wafer and a process of polishing and packaging the wafer to meet the specifications of the final device.
  • the packaging process includes a wafer inspection process for inspecting a defect of a semiconductor chip; A dicing step of cutting the wafer into separate chips; A die bonding process of attaching the separated chip to a circuit film (ci rcui t f i lm) or a mounting plate of a lead frame; A wire bonding process of connecting the chip pad provided on the semiconductor chip and the circuit pattern of the circuit film or the lead frame with electrical connection means such as wire; A molding process of wrapping the outside with an encapsulant to protect the internal circuit and other components of the semiconductor chip; Trim process for cutting the dam bar connecting the lead and the lead; Forming process of bending leads into desired shapes; And a finished product inspection process for inspecting defects of the finished package.
  • a dicing process is a process of manufacturing a plurality of individual chips separated from each other by grinding the back surface of the semiconductor wafer and cutting the semiconductor wafer along a dicing line between the chips.
  • MCP mul ti L chip package
  • the thinned chip may be damaged. There was a problem that the pickup properties are lowered.
  • the present invention uses a dicing film and a dicing die-bonding film including the dicing film and the dicing film that can improve the pickup properties in the dicing process of the semiconductor packaging process and prevent damage to the thinned semiconductor wafer It is for providing a dicing method of a semiconductor wafer.
  • a base film comprises a pressure-sensitive adhesive layer
  • the storage modulus of the pressure-sensitive adhesive layer is 3.0 * 10 5 to 4.0 * 10 6 Pa at 30 ° C
  • the cross-linking density of the pressure-sensitive adhesive is provided with a dicing film of 80% to 99%.
  • the storage modulus of the adhesive layer 1.0 eseo 80 ° C * 10 5 Pa may be more than, or 1.0 * 10 5 Pa to 4.0 * 10 5 Pa.
  • the adhesive layer may include an adhesive resin, a photoinitiator, and a crosslinking agent.
  • the adhesive resin has a glass transition temperature of 28 ° C to -58 ° C
  • (Meth) acrylate type resin can be included.
  • (meth) acrylate is meant to include both acrylate and (meth) acrylate.
  • the crosslinking agent may include at least one compound selected from the group consisting of an isocyanate compound, an aziridine compound, an epoxy compound, and a metal chelate compound.
  • the adhesive layer may include 0.1 to 20 parts by weight of the photoinitiator and 0.1 to 40 parts by weight of the crosslinking agent with respect to 100 parts by weight of the adhesive resin.
  • the base film may be a polyolefin film, polyester film, polycarbonate film, polyvinyl chloride film, polytetrafluoroethylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film, ethylene-vinyl acetate copolymer film , An ethylene-propylene copolymer film, and an ethylene-alkyl acrylate copolymer film.
  • the base film may have a thickness of 10 kPa to 200, and the adhesive layer may have a thickness of 5 ⁇ to 100 kPa.
  • the dicing film ; And an adhesive layer formed on at least one surface of the dicing film.
  • the adhesive layer may include a thermoplastic resin, an epoxy resin, and a curing agent.
  • the thermoplastic resin may be polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acrylonitrile copolymer rubber and (meth) acrylate It may include one or more polymer resins selected from the group consisting of resins.
  • the curing agent may include at least one compound selected from the group consisting of a phenolic resin, an amine curing agent, and an acid anhydride curing agent.
  • the adhesive layer may include 10 to 1,000 parts by weight of the thermoplastic resin and 10 to 700 parts by weight of the curing agent relative to 100 parts by weight of the epoxy resin.
  • the adhesive layer may further include at least one curing catalyst selected from the group consisting of phosphorus compounds, boron compounds, phosphorus-boron compounds and imidazole compounds.
  • the adhesive layer may have a thickness of 1 to 300.
  • a dicing die-bonding film ; And a wafer stacked on at least one surface of the dicing die 3 ⁇ 4 film; a preprocessing step of partially or partially dividing the semiconductor wafer;
  • a method of dicing a semiconductor wafer comprising: irradiating ultraviolet rays to the base film of the preprocessed semiconductor wafer and picking up individual chips separated by the division of the semiconductor wafer.
  • a dicing die bonding film and the dicing die bonding film including the dicing film and the dicing film capable of improving pick-up property and preventing damage to a thinned semiconductor wafer during the dicing process of the semiconductor packaging process A dicing method of a semiconductor wafer using may be provided.
  • the thinned chip When excessive force is applied when the adhesive layer and the adhesive layer are separated according to the thinning of the semiconductor wafer, the thinned chip may be damaged and the pickup property may be degraded. There was a problem, according to the dicing method of the dicing film, dicing die-bonding film and semiconductor wafer, improve the pick-up property to enable a smooth pick-up process and to prevent damage to the thinned semiconductor chip.
  • a dicing film, a dicing die bonding film, and a dicing method of a semiconductor wafer of a specific embodiment of the present invention will be described in detail.
  • a base film; And a pressure-sensitive adhesive layer, wherein the storage modulus of the pressure-sensitive adhesive layer is 3 * 10 5 to 4 * 10 6 Pa at 30 ° C., and the crosslinking density of the pressure-sensitive adhesive layer is 80% to 99%. can be.
  • the present inventors have conducted research on a method for improving pickup performance and preventing damage to a thinned semiconductor chip, and using a dicing film containing an adhesive layer having a specific storage modulus and crosslinking density, The experiment confirmed that the pick-up property can be improved and the damage of the thinned semiconductor chip can be prevented through the experiment.
  • the storage modulus of the adhesive layer may be 3 * 10 5 to 4 * 10 6 Pa at 30 ° C.
  • the storage modulus of the adhesive layer is less than 3 * 10 5 Pa at 30 ° C.
  • a large force is required when separating the adhesive layer from the adhesive layer, and may cause damage to the thinned semiconductor chip during the dicing process.
  • the storage elasticity of the adhesive layer is greater than 4 * 10 6 Pa at 30 ° C, the strength of the adhesive layer is increased, the pick-up property can be reduced $ 1.
  • the crosslinking density of the adhesive layer may be 80% to 99%, or 85% to 98 ) .
  • the degree of crosslinking of the adhesive layer is less than 80%, the anchoring action between the adhesive and the adhesive is increased to increase the force required to separate them, thereby lowering the pickup property of the semiconductor wafer.
  • the degree of crosslinking of the pressure-sensitive adhesive layer is greater than 99%, the adhesion of the pressure-sensitive adhesive layer is greatly reduced, resulting in chip flying during the dicing process. And so on.
  • the storage modulus of the adhesive layer is 3 * 10 5 to 4 * 10 6 Pa at 30 ° C
  • the storage modulus of the adhesive layer is 1 at 80 ° C. . may be O10 5 Pa or more, or 1.0 * 10 5 Pa to 4.0 * 10 6 Pa.
  • the specific composition of the adhesive layer is not particularly limited, and for example, the adhesive layer may include an adhesive resin, a photoinitiator, and a crosslinking agent.
  • the crosslinking agent may include at least one compound selected from the group consisting of an isocyanate compound, an aziridine compound, an epoxy compound, and a metal chelate compound.
  • the pressure-sensitive adhesive layer may include 0.1 to 40 parts by weight of a crosslinking agent relative to 100 parts by weight of the pressure-sensitive adhesive resin. If the content of the crosslinking agent is too small, the cohesive force of the adhesive layer may be insufficient. If the content of the crosslinking agent is too high, the adhesive layer may not sufficiently secure the adhesive force before photocuring and chip scattering may occur.
  • the photoinitiator are not limited, and commonly known photoinitiators may be used.
  • the adhesive layer may include 0.01 to 20 parts by weight of the photoinitiator relative to 100 parts by weight of the adhesive resin.
  • the specific kind of the base film is not particularly limited as long as it is a commonly used base film, for example, a polyolefin film, a polyester film, a polycarbonate film, a polyvinyl chloride film, a polytetrafluoroethylene film, a polybutene film, poly It may be one polymer film selected from the group consisting of butadiene film, vinyl chloride copolymer film, ethylene-vinyl acetate copolymer film, ethylene propylene copolymer film, and ethylene ⁇ alkyl acrylate copolymer film.
  • the base film may have a thickness of 10 to 200, and the adhesive layer may have a thickness of 5!
  • the adhesive resin may include a (meth) acrylate-based resin having a glass transition temperature of -28 ° C to -58 ° C, or ⁇ 30 ° C to-55 ° C.
  • (meth) acrylate is meant to include both acryl'ate and (meth) acrylate.
  • the (meth) acrylate resin may be, for example, a copolymer of a (meth) acrylic acid ester monomer and a crosslinkable functional group-containing monomer.
  • examples of the (meth) acrylic acid ester monomer include alkyl (meth) acrylate, and more specifically, monomers having an alkyl group having 1 to 12 carbon atoms, such as pentyl (meth) acrylate and 11-butyl (meth).
  • crosslinkable functional group-containing monomer examples include one or more kinds of hydroxy group-containing monomers, carboxyl group-containing monomers, or nitrogen-containing monomers.
  • hydroxyl group-containing compound examples include 2—hydroxyethyl (meth) acrylate,. 2'Hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxynuclear (meth) acrylate, 8- hydroxyoctyl (meth) acrylate, 2-hydroxyethylene glycol (Meth) acrylate, or 2-hydroxypropylene glycol (meth) acrylate, etc. are mentioned.
  • carboxyl group-containing compound examples include (meth) acrylic acid, 2- (meth) acryloyloxyacetic acid, 3- (meth) acryloyloxypropyl acid, 4- (meth) acryloyloxybutyl acid, acrylic acid double Sieve, itaconic acid, maleic acid, or maleic acid ⁇ ⁇ ⁇ dode number
  • nitrogen-containing monomers include (meth) acrylonitrile, ⁇ -vinyl pyridone or ⁇ -vinyl caprolactam.
  • the (meth) acrylate resin may further include vinyl acetate, styrene or acrylonitrile, etc., in view of improving other functionalities such as compatibility.
  • the adhesive layer may further include an ultraviolet curable compound.
  • the type of the ultraviolet curable compound is not particularly limited, and for example, a polyfunctional compound having a weight average molecular weight of about 500 to 300, 000 (ex. Polyfunctional urethane acrylate, polyfunctional acrylate monomer or oligomer, etc.). )of Can be used.
  • the average person skilled in the art can easily select the appropriate compound according to the intended use.
  • the content of the ultraviolet curable compound may be 1 part by weight to 400 parts by weight, preferably 5 parts by weight to 200 parts by weight, based on 100 parts by weight of the above-mentioned adhesive resin. If the content of the ultraviolet curable compound is less than 1 part by weight, there is a risk that the lowering of the adhesive strength after curing is not sufficient, and the pick-up property may be degraded. If the content of the ultraviolet curable compound exceeds 400 parts by weight, the cohesive force of the adhesive may be insufficient before peeling off the ultraviolet ray, There is a possibility that it may not be easily performed. .
  • the ultraviolet curable pressure sensitive adhesive may be used in a form in which carbon-carbon double bonds are bonded to side chains or main chain ends of the acrylic copolymer, as well as the additive type ultraviolet curable compound. That is, the (meth) acrylic co-polymer may further include an ultraviolet curable compound bonded to the side chain of the main chain including the (meth) acrylic acid ester monomer and the crosslinkable functional group-containing monomer.
  • the type of the ultraviolet curable compound includes 1 to 5, preferably 1 or 2, photocurable functional groups (ex. Ultraviolet polymerizable carbon-carbon double bonds) per molecule, and is also included in the main chain. and a functional group capable of banung ⁇ does not specifically limit having a functional group.
  • examples of the crosslinkable functional group and the functional group that can be reacted include an isocyanate group or an epoxy group, but are not limited thereto.
  • UV-curable compound examples include a functional group capable of reacting with a hydroxyl group included in the main chain, (meth) acryloyloxy isocyanate, (meth) acryloyloxy methyl isocyanate, 2- (meth) acrylic Loyloxy ethyl isocyanate, 3- (meth) acryloyloxy propyl isocyanate, 4- (meth) acryloyloxy butyl isocyanate, m-propenyl- ⁇ , ⁇ -dimethyl .
  • One kind or fish species such as glycidyl (meth) acrylate or allyl glycidyl ether may be mentioned, but is not limited thereto.
  • the ultraviolet curable compound may be included in the side chain of the base resin by substituting 5 mol% to 90 mol% of the crosslinkable functional groups included in the main chain.
  • the adhesive layer may suitably include a tackifier such as rosin resin, terpene resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin or aliphatic aromatic copolymerized petroleum resin.
  • a method of forming the adhesive layer on the base film does not i being particularly limited, for example, once the pressure-sensitive adhesive composition on a substrate by coating a pressure-sensitive adhesive composition of the present invention directly on the film method of forming a pressure-sensitive adhesive layer or a releasable base
  • the pressure-sensitive adhesive layer may be coated to prepare an pressure-sensitive adhesive layer, and a method of transferring the pressure-sensitive adhesive layer onto a base film using the peelable base material may be used.
  • the method of applying and drying the pressure-sensitive adhesive composition is not particularly limited, and for example, a composition including each of the above components may be used as it is, or diluted in a suitable organic solvent, such as a comma coater, gravure coater, die coater or reverse coater. After application by means of 6 (rc to 2 (xrc), a method of drying the solvent for 10 seconds to 30 minutes at a temperature of xrc may be used.
  • a dicing die-bonding film including a dicing film and an adhesive layer formed on at least one surface of the dicing film may be provided.
  • the adhesive layer may include a thermoplastic resin, an epoxy resin, and a curing agent.
  • the thermoplastic resin may be polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, semi-butadiene acrylonitrile copolymer rubber and (meth) acrylic
  • One or more polymers selected from the group consisting of rate-based resins Resin may be included.
  • the epoxy resin may include an epoxy resin for general adhesives known in the art, and for example, an epoxy resin containing two or more epoxy groups in a molecule and having a weight average molecular weight of 100 to 2,000 may be used. .
  • the epoxy resin may form a hard crosslinked structure through a curing process, and may exhibit excellent adhesion, heat resistance, and mechanical strength. More specifically, it is preferable that the epoxy resin uses an epoxy resin having an average epoxy equivalent of 100 to 1,000. When the epoxy equivalent of the said epoxy resin is less than 100, a crosslinking density may become high too much, and there exists a possibility that an adhesive film may show a hard property as a whole, and when it exceeds ⁇ and ⁇ , heat resistance may fall.
  • epoxy resin examples include bifunctional epoxy resins such as bisphenol A epoxy resin or bisphenol F epoxy resin; Or cresol novolac epoxy resin, phenol novolac sepoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane type epoxy resin, naphthalene type epoxy resin, dicyclopenta
  • bifunctional epoxy resins such as bisphenol A epoxy resin or bisphenol F epoxy resin
  • cresol novolac epoxy resin phenol novolac sepoxy resin
  • tetrafunctional epoxy resin biphenyl type epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane type epoxy resin, naphthalene type epoxy resin, dicyclopenta
  • polyfunctional epoxy resins having three or more functional groups such as a diene type epoxy resin or a dicyclopentadiene-modified phenol type epoxy resin, are not limited thereto.
  • Multifunctional epoxy resin means an epoxy resin having three or more functional groups. That is, in general, bifunctional epoxy resins are excellent in flexibility and flowability at high temperatures, but are poor in heat resistance and curing rate, whereas polyfunctional epoxy resins having three or more functional groups are fast in curing rate and excellent in high crosslinking density. Heat resistance, but flexibility and flowability is poor. Therefore, by appropriately mixing and using the above two kinds of resins, it is possible to suppress the scattering of chips and the generation of burrs during the dicing process while controlling the elastic modulus and tack characteristics of the adhesive layer.
  • the curing agent included in the adhesive layer is not particularly limited as long as it can react with the epoxy resin and / or thermoplastic resin to form a crosslinked structure.
  • the curing agent is a phenolic resin, an amine curing agent, and an acid anhydride type.
  • hardener It may include one or more compounds selected from the group consisting of.
  • the adhesive layer may include 10 to 1,000 parts by weight of the thermoplastic resin and 10 to 700 parts by weight of the curing agent relative to 100 parts by weight of the epoxy resin.
  • the curing catalyst plays a role of promoting the action of the curing agent and curing of the resin composition for semiconductor bonding, and a curing catalyst known to be used in the manufacture of a semiconductor adhesive film or the like can be used without great limitation.
  • the curing catalyst may be one or more selected from the group consisting of phosphorus compounds, boron compounds, phosphorus-boron compounds and imidazole compounds.
  • the amount of the curing catalyst may be appropriately selected in consideration of physical properties of the adhesive film to be finally prepared, for example, 0.5 to 10 weight based on a total of 100 parts by weight of the epoxy resin, the (meth) acrylate resin, and the phenol resin. Can be used as a wealth.
  • the dicing die-bonding film may further include a release film formed on the adhesive layer.
  • the release film include one or more kinds of polyethylene terephthalate film, pletetrafluoroethylene film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film or polyimide film and the like.
  • the surface of the release film as described above may be released by one or more kinds of alkylide, silicone, fluorine, unsaturated ester, polyolefin, or wax or the like, and among these, alkyd, silicone, or fluorine based, particularly having heat resistance. Mold release agents, such as these, are preferable.
  • the release film is usually 5 to 500 ⁇ m, preferably may be formed in a thickness of about 10 to 200, but is not limited thereto.
  • the method for producing the above-mentioned dicing die-bonding film is not particularly limited, and for example, a method of sequentially forming an adhesive part, an adhesive part and a release film on a base film, or a dicing film (base film + adhesive part) And separately preparing a release film having a die-bonding film or an adhesive part formed thereon .
  • a method of laminating it may be used.
  • Lamination method in the above is not particularly limited, hot lamination or lamination press method can be used in terms of double continuous process possibility and efficiency
  • the hot roll lamination method is preferable.
  • Hot lamination method is at icrc to loo ° c
  • the dicing die bonding film On the other hand, according to another embodiment of the invention, the dicing die bonding film; And a wafer stacked on at least one surface of the dicing die-bonding film; a pre-processing step of partially or partially dividing the semiconductor wafer. Irradiating ultraviolet rays to the base film of the pre-processed semiconductor wafer, and picking up the individual chips separated by the division of the semiconductor wafer, a dicing method of a semiconductor wafer can be provided.
  • n_DDM which is a chain transfer agent (CTA) and 100 parts by weight of ethyl acetate (EAc) as a solvent. 3, in rc while injecting nitrogen to remove oxygen into the reactor
  • the mixture was mixed well for 30 minutes or more. Thereafter, the temperature was maintained at 62 ° C., and a concentration of 300 ppm of the initiator V-60 (Azob isi sobut y 1 on itri 1 e) was added thereto, and the reaction was initiated.
  • V-60 Azob isi sobut y 1 on itri 1 e
  • a (meth) acrylate polymer resin was prepared in the same manner as in Preparation Example 1, except for the composition shown in Table 1.
  • a pressure-sensitive adhesive composition was prepared by mixing 7 g of TE) I-based isocyanate curing agent and 3 g of photoinitiator (Irgacure 184) with 100 g of the (meth) acrylate polymer resin of Preparation Example 1.
  • the pressure-sensitive adhesive composition was applied to a release-treated thickness 38um PET, and dried at 110 ° C for 3 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 ⁇ .
  • the formed pressure-sensitive adhesive layer was laminated on a 100% polyolefin base film and then subjected to aging to prepare a dicing film.
  • the pressure-sensitive adhesive layer formed on the release-treated thickness 38um PET was the same release treatment. After lamination to PET, it was used to measure the storage modulus of the adhesive after aging.
  • a dicing die bonding film was prepared after transferring the die bonding film circularly cut into the prepared dicing film through paper under a condition of 5 kgf / cm 2 .
  • Examples 2-5 and Comparative Examples 1-4 were prepared after transferring the die bonding film circularly cut into the prepared dicing film through paper under a condition of 5 kgf / cm 2 .
  • the prepared measurement sample of thickness 1mm was cut into a rectangular shape having a length of 17mm and a width of 5 ⁇ . And then DMA (Dynami c Mechani cal Analys is, TA instrument) using a frequency of 1Hz, pre-load force 0.01 N, heating rate
  • the storage modulus of 15 CTC was measured at -30 ° C at 10 ° C / min.
  • Table 3 shows the storage modulus (Pa) of the pressure sensitive adhesive at 3 (C and 80 ° C ) .
  • Crosslinking density (%) [(weight of adhesive and wire mesh after drying b-weight of wire mesh c) I (initial weight a)] X 100
  • the prepared sample was measured at a temperature of 180 degrees at room temperature at a speed of 300 kV / s, and the force (gf / 25 i ⁇ ) of peeling the die-bonding film in dicing was measured, and the results are shown in Table 3 below.
  • the die-bonding surface was mounted on a mirror wafer (8 inches, thickness 80uni) at a temperature of 60 ° C and the chip size was 10 ⁇ X 10 Dicing was performed on the following conditions so that it might become kPa.
  • the picked-up measurement sample was prepared by irradiating an ultraviolet-ray with a light quantity of 300 mJ / cm 2 (roughness 70 mW / cm 2 ) to the diced sample on the substrate surface of the dicing film.
  • Table 3 shows the results of measuring the success rate by using the SPA-400 (SHINKAWA) to prepare the sample under the following conditions.
  • Cutting blade height (cut depth) 80 ⁇
  • Needle iunge up height 0.2 ⁇
  • Needle piunge up speed 10mm / s
  • the adhesive layer of Examples 1 to 5 has a storage modulus of 3.0 * 10 5 to 2: O10 6 at 30 ° C and a storage modulus of 80 ° C or higher at 1.O10 5 Pa and 80% at 80 ° C. It has a cross-linking density of 99% to 99.
  • the adhesive layer and the adhesive layer are separated, it is confirmed that damage to the thinned chip does not occur and the pickup property can be improved.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention relates to a dicing film which comprises a base film and an adhesive layer, wherein the storage elastic modulus of the adhesive layer is 3×105 to 4×106 Pa at 30°C and the cross-linking density of the adhesive layer is 80% to 99%; to a dicing die bonding film comprising the dicing film; and to a method for dicing a semiconductor wafer using the dicing die bonding film.

Description

【명세서】  【Specification】
【발명의 명칭】  [Name of invention]
다이싱 필름 및 다이싱 다이본딩 필름  Dicing Film and Dicing Die Bonding Film
【기술분야】  Technical Field
본 발명은 다이싱 필름 및 다이싱 다이본딩 필름에 관한 것으로서, 보다 상세하게는 반도체 패키징 공정의 다이싱 과정에서 픽업성을 향상시키고 박형화된 반도체 칩의 손상을 방지 수 있는 다이싱 필름과 상기 다이싱 필름을 포함한 다이.싱 다이본딩 필름과 상기 다이싱 다이본딩 필름을 이용한 반도체 웨이퍼의 다이싱 방법에 관한 것이다.  The present invention relates to a dicing film and a dicing die-bonding film, and more particularly, a dicing film and dicing capable of improving pick-up property and preventing damage to a thinned semiconductor chip during a dicing process of a semiconductor packaging process. Dicing die film containing a film and a dicing method of a semiconductor wafer using the said dicing die bonding film.
【발명의 배경이 되는 기술】  [Technique to become background of invention]
일반적으로 반도체 칩의 제조 공정은 웨이퍼에 미세한 패턴을 형성하는 공정 및 최종 장치의 규격에 맞도록 웨이퍼를 연마하여 패키징 (packaging)하는 공정을 포함한다. 패키징 공정은 반도체 칩의 불량을 검사하는 웨이퍼 검사 공정; 웨이퍼를 절단하여 낱개의 칩으로 분리하는 다이싱 공정; 분리된 칩을 회로 필름 (ci rcui t f i lm) 또는 리드 프레임의 탑재판에 부착시키는 다이본딩 공정; 반도체 칩 상에 구비된 칩 패드와 회로 필름 또는 리드 프레임의 회로 패턴을 와이어와 같은 전기적 접속 수단으로 연결시키는 와이어 본딩 공정; 반도체 칩의 내부 회로와 그 외의 부품을 보호하기 위해 봉지재로 외부를 감싸는 몰딩 공정; 리드와 리드를 연결하고 있는 댐바를 절단하는 트림 공정; 리드를 원하는 형태로 구부리는 포밍 공정 ; 및 완성된 패키지의 불량을 검사하는 완성품 검사공정 등을 포함한다.  In general, the manufacturing process of the semiconductor chip includes a process of forming a fine pattern on the wafer and a process of polishing and packaging the wafer to meet the specifications of the final device. The packaging process includes a wafer inspection process for inspecting a defect of a semiconductor chip; A dicing step of cutting the wafer into separate chips; A die bonding process of attaching the separated chip to a circuit film (ci rcui t f i lm) or a mounting plate of a lead frame; A wire bonding process of connecting the chip pad provided on the semiconductor chip and the circuit pattern of the circuit film or the lead frame with electrical connection means such as wire; A molding process of wrapping the outside with an encapsulant to protect the internal circuit and other components of the semiconductor chip; Trim process for cutting the dam bar connecting the lead and the lead; Forming process of bending leads into desired shapes; And a finished product inspection process for inspecting defects of the finished package.
상기 다이싱 공정을 통해, 복수개의 칩들이 형성된 반도체 웨이퍼로부터 서로 분리된 개별칩들이 제조된다. 광의적으로 다이싱 공정은 반도체 웨이퍼의 후면을 그라인딩 (gr inding)하고, 칩들 사이의 다이성 라인을 따라 반도체 웨이퍼를 절단함으로써 서로 분리된 복수개의 개별칩들을 제조하는 공정이다. 한편, 전자기기의 소형화 및 메모리 용량 증대에 따라 반도체 칩들을 수직으로 쌓아가는 MCP(mul t iLchip package) 기술이 최근 많이 사용되고 있고, 많은 칩들을 쌓기 위해 개개의 칩 두께는 얇아져야 한다. Through the dicing process, individual chips separated from each other from a semiconductor wafer on which a plurality of chips are formed are manufactured. In general, a dicing process is a process of manufacturing a plurality of individual chips separated from each other by grinding the back surface of the semiconductor wafer and cutting the semiconductor wafer along a dicing line between the chips. Meanwhile, with the miniaturization of electronic devices and the increase in memory capacity, MCP (mul ti L chip package) technology, in which semiconductor chips are stacked vertically, has been widely used in recent years, and individual chip thicknesses have to be thin in order to stack many chips.
상기와 같은 반도체 웨이퍼의 박형화에 따라 접착층과 점착층의 분리 시 과도한 힘이 가해질 경우 박형화된 칩의 손상이 있을 수 있어, 다이성 공정에서 픽업성이 저하되는 문제점이 존재하는 실정이었다. According to the thinning of the semiconductor wafer as described above, if excessive force is applied when separating the adhesive layer and the adhesive layer, the thinned chip may be damaged. There was a problem that the pickup properties are lowered.
【발명의 내용】  [Content of invention]
【해결하고자 하는 과제]  Problem to be solved
본 발명은 반도체 패키징 공정의 다이싱 과정에서 픽업성을 향상시키고 박형화된 반도체 첩의 손상을 방지 수 있는 다이싱 필름과 상기 다이싱 필름을 포함한 다이싱 다이본딩 필름과 상기 다이싱 다이본딩 필름을 이용한 반도체 웨.이퍼의 다이싱 방법을 제공하기 위한 것이다.  The present invention uses a dicing film and a dicing die-bonding film including the dicing film and the dicing film that can improve the pickup properties in the dicing process of the semiconductor packaging process and prevent damage to the thinned semiconductor wafer It is for providing a dicing method of a semiconductor wafer.
【과제의 해결 수단】  [Measures of problem]
본 명세서에서는, 기재 필름; 및 점착층을 포함하고, 상기 점착층의 저장탄성률이 30 °C에서 3.0*105 내지 4.0* 106 Pa이며, 상기 점착충의 가교 밀도가 80% 내지 99%인 다이싱 필름이 제공된다. In this specification, a base film; And it comprises a pressure-sensitive adhesive layer, the storage modulus of the pressure-sensitive adhesive layer is 3.0 * 10 5 to 4.0 * 10 6 Pa at 30 ° C, the cross-linking density of the pressure-sensitive adhesive is provided with a dicing film of 80% to 99%.
상기 점착층의 저장탄성률이 80 °C에서 1 .0*105 Pa 이상, 또는 1.0 * 105 Pa 내지 4.0 * 105 Pa일 수 있다. The storage modulus of the adhesive layer 1.0 eseo 80 ° C * 10 5 Pa may be more than, or 1.0 * 10 5 Pa to 4.0 * 10 5 Pa.
상기 점착층은 점착 수지, 광개시제 및 가교제를 포함할 수 있다.  The adhesive layer may include an adhesive resin, a photoinitiator, and a crosslinking agent.
상기 점착 수지는 28 °C 내지 -58 °C의 유리 전이 온도를 갖는The adhesive resin has a glass transition temperature of 28 ° C to -58 ° C
(메타)아크릴레이트계 수지를 포함할 수 있다. 본 명세서에서, (메타)아크릴레이트는 아크릴레이트 및 (메타)크릴레이트를 모두 포함하는 의미이다 . (Meth) acrylate type resin can be included. In the present specification, (meth) acrylate is meant to include both acrylate and (meth) acrylate.
상기 가교제는 이소시아네이트계 화합물, 아지리딘계 화합물, 에폭시계 화합물 및 금속 킬레이트계 화합물로 이루어진 군에서 선택된 1종 이상의 화합물을 포함할 수 있다.  The crosslinking agent may include at least one compound selected from the group consisting of an isocyanate compound, an aziridine compound, an epoxy compound, and a metal chelate compound.
상기 점착층은 상기 점착 수지 100중량부 대비 광개시제 0. 1 내지 20중량부 및 가교제 0. 1 내지 40중량부를 포함할 수 있다.  The adhesive layer may include 0.1 to 20 parts by weight of the photoinitiator and 0.1 to 40 parts by weight of the crosslinking agent with respect to 100 parts by weight of the adhesive resin.
상기 기재필름은 폴리을레핀 필름, 폴리에스테르 필름, 폴리카보네이트 필름, 폴리염화비닐 필름, 폴리테트라폴루오로에틸렌 필름, 폴리부텐 필름, 폴리부타디엔 필름, 염화비닐 공중합체 필름, 에틸렌—초산비닐 공중합체 필름, 에틸렌 -프로필렌 공중합체 필름, 및 에틸렌 -알킬아크릴레이트 공증합체 필름으로 이루어지는 군으로부터 선택된 하나일 수 있다.  The base film may be a polyolefin film, polyester film, polycarbonate film, polyvinyl chloride film, polytetrafluoroethylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film, ethylene-vinyl acetate copolymer film , An ethylene-propylene copolymer film, and an ethylene-alkyl acrylate copolymer film.
상기 기재 필름은 10 卿내지 200 의 두께를 갖고, 상기 점착층은 5 ηι 내지 100 卿의 두께를 가질 수 있다. 또한, 본 명세서에서는, 상기 다이싱 필름; 및 상기 다이싱 필름의 적어도 일면에 형성된 접착층을 포함하는, 다이싱 다이본딩 필름이 제공된다. 상기 접착층은 열가소성 수지, 에폭시 수지 및 경화제를 포함할 수 있다. 상기 열가소성 수지는 폴리이미드, 폴리에테르 이미드, 플리에스테르 이미드, 폴리아미드, 폴리에테르 술폰, 폴리에테르 케톤, 폴리올레핀, 폴리염화비닐, 페녹시, 반응성 부타디엔 아크릴로 니트릴 공중합 고무 및 (메타)아크릴레이트계 수지로 이루어진 군으로부터 선택된 하나 이상의 고분자 수지를 포함할 수 있다. The base film may have a thickness of 10 kPa to 200, and the adhesive layer may have a thickness of 5 ηι to 100 kPa. In addition, in the present specification, the dicing film; And an adhesive layer formed on at least one surface of the dicing film. The adhesive layer may include a thermoplastic resin, an epoxy resin, and a curing agent. The thermoplastic resin may be polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, reactive butadiene acrylonitrile copolymer rubber and (meth) acrylate It may include one or more polymer resins selected from the group consisting of resins.
상기 경화제는 페놀계 수지, 아민계 경화제, 및 산무수물계 경화제로 이루어진 군에서 선택된 1종 이상의 화합물을 포함할 수 있다.  The curing agent may include at least one compound selected from the group consisting of a phenolic resin, an amine curing agent, and an acid anhydride curing agent.
상기 접착층은 상기 에폭시 수지 100중량부 대비 상기 열가소성 수지 10 내지 1 , 000중량부 및 상기 경화제 10 내지 700증량부를 포함할 수 있다ᅳ  The adhesive layer may include 10 to 1,000 parts by weight of the thermoplastic resin and 10 to 700 parts by weight of the curing agent relative to 100 parts by weight of the epoxy resin.
상기 접착층은 인계 화합물, 붕소계 화합물 및 인-붕소계 화합물 및 이미다졸계 화합물로 이루어진 군에서 선택된 1종 이상의 경화 촉매를 더 포함할 수 있다.  The adhesive layer may further include at least one curing catalyst selected from the group consisting of phosphorus compounds, boron compounds, phosphorus-boron compounds and imidazole compounds.
상기 접착층은 1 내지 300 의 두께를 가질 수 있다. 또한, 본 명세서에서는, 다이싱 다이본딩 필름; 및 상기 다이싱 다이본 ¾ 필름의 적어도 일면에 적층된 웨이퍼;를 포함하는 반도체 웨이퍼를 완전 분단 또는 분단 가능하게 부분 처리하는 전처리 단계; 상기 전처리한 반도체 웨이퍼의 기재 필름에 자외선을 조사하고, 상기 반도체 웨이퍼의 분단에 의해 분리된 개별 칩들을 픽업하는 단계;를 포함하는, 반도체 웨이퍼의 다이싱 방법이 제공된다. 【발명의 효과】  The adhesive layer may have a thickness of 1 to 300. In addition, in this specification, a dicing die-bonding film; And a wafer stacked on at least one surface of the dicing die ¾ film; a preprocessing step of partially or partially dividing the semiconductor wafer; A method of dicing a semiconductor wafer is provided, comprising: irradiating ultraviolet rays to the base film of the preprocessed semiconductor wafer and picking up individual chips separated by the division of the semiconductor wafer. 【Effects of the Invention】
본 발명에 따르면, 반도체 패키징 공정의 다이싱 과정에서 픽업성을 향상시키고 박형화된 반도체 첩의 손상을 방지 수 있는 다이싱 필름과 상기 다이싱 필름을 포함한 다이성 다이본딩 필름과 상기 다이싱 다이본딩 필름을 이용한 반도체 웨이퍼의 다이싱 방법이 제공될 수 있다.  According to the present invention, a dicing die bonding film and the dicing die bonding film including the dicing film and the dicing film capable of improving pick-up property and preventing damage to a thinned semiconductor wafer during the dicing process of the semiconductor packaging process A dicing method of a semiconductor wafer using may be provided.
반도체 웨이퍼의 박형화에 따라 접착층과 점착층의 분리 시 과도한 힘이 가해질 경우 박형화된 칩의 손상이 발생할 수 있으며 픽업성이 저하되는 문제점이 존재하였는데, 상기 다이성 필름, 다이싱 다이본딩 필름 및 반도체 웨이퍼의 다이싱 방법에 따르며, 픽업성을 향상시켜 원활한 픽업 공정이 가능해지며 박형화된 반도체 칩의 손상을 방지 수 있다. When excessive force is applied when the adhesive layer and the adhesive layer are separated according to the thinning of the semiconductor wafer, the thinned chip may be damaged and the pickup property may be degraded. There was a problem, according to the dicing method of the dicing film, dicing die-bonding film and semiconductor wafer, improve the pick-up property to enable a smooth pick-up process and to prevent damage to the thinned semiconductor chip.
【발명을 실시하기 위한 구체적인 내용】  [Specific contents to carry out invention]
이하에서는 발명의 구체적인 구현예의 다이싱 필름, 다이싱 다이본딩 필름 및 반도체 웨이퍼의 다이싱 방법에 관하여 보다 상세하게 설명하기로 한다. 발명의 일 구현예에 따르면 , 기재 필름 ; 및 점착층을 포함하고, 상기 점착층의 저장탄성률이 30 °C에서 3*105 내지 4*106 Pa이며, 상기 점착층의 가교 밀도가 80% 내지 99%인, 다이싱 필름이 제공될 수 있다. Hereinafter, a dicing film, a dicing die bonding film, and a dicing method of a semiconductor wafer of a specific embodiment of the present invention will be described in detail. According to one embodiment of the invention, a base film; And a pressure-sensitive adhesive layer, wherein the storage modulus of the pressure-sensitive adhesive layer is 3 * 10 5 to 4 * 10 6 Pa at 30 ° C., and the crosslinking density of the pressure-sensitive adhesive layer is 80% to 99%. Can be.
본 발명자들은 픽업성을 향상시키고 박형화된 반도체 칩의 손상을 방지하기 위한 방법에 대한 연구를 진행하여, 특정의 저장탄성률 및 가교 밀도를 갖는 점착층을 포함한 다이싱 필름을 사용하면, 반도체 패키징 공정의 다이싱 과정에서 픽업성을 향상시키고 박형화된 반도체 칩의 손상을 방지 수 있다는 점을 실험을 통하여 확인하고 발명을 완성하였다.  The present inventors have conducted research on a method for improving pickup performance and preventing damage to a thinned semiconductor chip, and using a dicing film containing an adhesive layer having a specific storage modulus and crosslinking density, The experiment confirmed that the pick-up property can be improved and the damage of the thinned semiconductor chip can be prevented through the experiment.
종래에는 다이싱 필름의 점착층의 점착력을 낮추어 픽업성을 높이는 방법이 시도된 적이 있으나, 단순히 점착층이 점착력만을 낮추는 것으로는 픽업성 향상에 한계가 있었으며 오히려 픽업성이 저하되는 결과가 나타나기도 하였다. 이에 본 발명자들은 상술한 특정의 저장탄성를 및 가교 밀도를 갖는 점착층을 적용하여 이러한 문제점을 해결하였다.  In the past, a method of increasing the pick-up property by reducing the adhesive force of the adhesive layer of the dicing film has been attempted, but simply lowering the adhesive force of the adhesive layer has a limit in improving the pickup property, and rather, the pick-up property has been deteriorated. . The present inventors have solved this problem by applying the adhesive layer having the specific storage elasticity and crosslinking density described above.
상술한 바와 같이, 상기 점착층의 저장탄성률이 30 °C에서 3* 105 내지 4*106 Pa일 수 있다. 상기 점착층의 저장탄성률이 30 °C에서 3*105 Pa 미만이면, 점착층과 접착층의 분리 시 큰 힘이 필요하며 다이싱 과정에서 박형화된 반도체 칩의 손상을 야기할 수 있다. 또한, 상기 점착층의 저장탄성를이 30°C에서 4*106 Pa 초과이면, 점착층의 강도가 상승하여 픽업성이 저하될 수 $1다. As described above, the storage modulus of the adhesive layer may be 3 * 10 5 to 4 * 10 6 Pa at 30 ° C. When the storage modulus of the adhesive layer is less than 3 * 10 5 Pa at 30 ° C., a large force is required when separating the adhesive layer from the adhesive layer, and may cause damage to the thinned semiconductor chip during the dicing process. In addition, when the storage elasticity of the adhesive layer is greater than 4 * 10 6 Pa at 30 ° C, the strength of the adhesive layer is increased, the pick-up property can be reduced $ 1.
또한, 상기 점착층의 가교 밀도가 80% 내지 99% , 또는 85% 내지 98 )일 수 있다. 상기 점착층의 가교도가 80% 미만인 경우 점착제 및 접착제 간의 투묘작용 (anchor i ng)이 높아지져서 이들간의 분리되시 필요한 힘이 상승되어 반도체 웨이퍼의 픽업성이 저하될 수 있다. 또한, 상기 점착층의 가교도가 99% 초과이면, 상기 점착층의 점착력이 크게 저하되어 다이싱 공정시 칩 플라잉 현상 등의 발생할 수 있다. In addition, the crosslinking density of the adhesive layer may be 80% to 99%, or 85% to 98 ) . When the degree of crosslinking of the adhesive layer is less than 80%, the anchoring action between the adhesive and the adhesive is increased to increase the force required to separate them, thereby lowering the pickup property of the semiconductor wafer. In addition, when the degree of crosslinking of the pressure-sensitive adhesive layer is greater than 99%, the adhesion of the pressure-sensitive adhesive layer is greatly reduced, resulting in chip flying during the dicing process. And so on.
또한, 상기 다이싱 필름을 이용시 반도체 웨이퍼의 픽업성을 높이기 상기 점착층의 저장탄성률이 30°C에서 3*105 내지 4*106 Pa 이며, 상기 점착층의 저장탄성률이 80°C에서 1. O105 Pa 이상, 또는 1.0 * 105 Pa 내지 4.0 * 106 Pa일 수 있다. In addition, to increase the pickup of the semiconductor wafer when using the dicing film, the storage modulus of the adhesive layer is 3 * 10 5 to 4 * 10 6 Pa at 30 ° C, the storage modulus of the adhesive layer is 1 at 80 ° C. . may be O10 5 Pa or more, or 1.0 * 10 5 Pa to 4.0 * 10 6 Pa.
상술한 내용을 제외하고는 상기 점착층의 구체적인 조성이 크게 한정되는 것은 아니며, 예를 들어 상기 점착층은 점착 수지, 광개시제 및 가교제를 포함할 수 있다ᅳ  Except for the above-mentioned contents, the specific composition of the adhesive layer is not particularly limited, and for example, the adhesive layer may include an adhesive resin, a photoinitiator, and a crosslinking agent.
상기 가교제는 이소시아네이트계 화합물 , 아지리딘계 화합물, 에폭시계 화합물 및 금속 킬레이트계 화합물로 이루어진 군에서 선택된 1종 이상의 화합물을 포함할 수 있다. 상기 점착층은 상기 점착 수지 100증량부 대비 가교제 0. 1 내지 40중량부를 포함할 수 있다. 상기 가교제의 함량이 너무 작으면 상기 점착층의 응집력이 부족할 수 있으며, 상기 가교제의 함량이 너무 높으면 상기 점착층이 광경화 이전에 점착력이 층분히 확보하지 못하여 칩 비산 현상 등이 발생할 수 있다.  The crosslinking agent may include at least one compound selected from the group consisting of an isocyanate compound, an aziridine compound, an epoxy compound, and a metal chelate compound. The pressure-sensitive adhesive layer may include 0.1 to 40 parts by weight of a crosslinking agent relative to 100 parts by weight of the pressure-sensitive adhesive resin. If the content of the crosslinking agent is too small, the cohesive force of the adhesive layer may be insufficient. If the content of the crosslinking agent is too high, the adhesive layer may not sufficiently secure the adhesive force before photocuring and chip scattering may occur.
상기 광개시제의 구체적인 예가 한정되는 것은 아니며, 통상적으로 알려진 광개시제를 사용할 수 있다. 또한, 상기 점착층은 상기 점착 수지 100중량부 대비 광개시제 0. 1 내지 20중량부를 포함할 수 있다.  Specific examples of the photoinitiator are not limited, and commonly known photoinitiators may be used. In addition, the adhesive layer may include 0.01 to 20 parts by weight of the photoinitiator relative to 100 parts by weight of the adhesive resin.
상기 기재 필름의 구체적인 종류는 일반적으로 사용되는 기재필름이라면 특별히 한정되지 않으며, 예를 들어 폴리올레핀 필름, 폴리에스테르 필름, 폴리카보네이트 필름, 폴리염화비닐 필름, 폴리테트라플루오로에틸렌 필름, 폴리부텐 필름, 폴리부타디엔 필름, 염화비닐 공중합체 필름, 에틸렌-초산비닐 공중합체 필름, 에틸렌ᅳ프로필렌 공중합체 필름, 및 에틸렌ᅳ알킬아크릴레이트 공중합체 필름으로 이루어지는 군으로부터 선택된 하나의 고분자 필름일 수 있다. 상기 기재 필름은 10 내지 200 의 두께를 갖고, 상기 점착층은 5 !M 내자 100 의 두께를 가질 수 있다.  The specific kind of the base film is not particularly limited as long as it is a commonly used base film, for example, a polyolefin film, a polyester film, a polycarbonate film, a polyvinyl chloride film, a polytetrafluoroethylene film, a polybutene film, poly It may be one polymer film selected from the group consisting of butadiene film, vinyl chloride copolymer film, ethylene-vinyl acetate copolymer film, ethylene propylene copolymer film, and ethylene ᅳ alkyl acrylate copolymer film. The base film may have a thickness of 10 to 200, and the adhesive layer may have a thickness of 5!
구체적으로, 상기 점착 수지는 -28°C 내지 -58°C , 또는 ᅳ 30°C 내지 - 55°C의 유리 전이 온도를 갖는 (메타)아크릴레이트계 수지를 포함할 수 있다. 본 명세서에서, (메타)아크릴레이트는 아크릴'레이트 및 (메타)크릴레이트를 모두 포함하는 의미이다. 상기 (메타)아크릴레이트계 수지는 예를 들면, (메타)아크릴산 에스테르계 단량체 및 가교성 관능기 함유 단량체의 공중합체일 수 있다. 이 때 (메타)아크릴산 에스테르계 단량체의 예로는 알킬 (메타)아크릴레이트를 들 수 있으며, 보다 구체적으로는 탄소수 1 내지 12의 알킬기를 가지는 단량체로서, 펜틸 (메타)아크릴레이트, 11-부틸 (메타)아크릴레이트, 에틸 (메타)아크릴레이트, 메틸 (메타)아크릴레이트, 핵실 (메타)아크릴레이트, n-옥틸 (메타)아크릴레이트, 이소옥틸 (메타)아크릴레이트, 2-에틸핵실 (메타)아크릴레이트, 도데실 (메타)아크릴레이트 또는 데실 (메타)아크릴레이트의 일종 또는 이종 이상의 흔합을 들 수 있다. Specifically, the adhesive resin may include a (meth) acrylate-based resin having a glass transition temperature of -28 ° C to -58 ° C, or ᅳ 30 ° C to-55 ° C. In the present specification, (meth) acrylate is meant to include both acryl'ate and (meth) acrylate. The (meth) acrylate resin may be, for example, a copolymer of a (meth) acrylic acid ester monomer and a crosslinkable functional group-containing monomer. At this time, examples of the (meth) acrylic acid ester monomer include alkyl (meth) acrylate, and more specifically, monomers having an alkyl group having 1 to 12 carbon atoms, such as pentyl (meth) acrylate and 11-butyl (meth). ) Acrylate, ethyl (meth) acrylate, methyl (meth) acrylate, nucleus (meth) acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylnuclear (meth) acrylic And a mixture of one or more kinds of dodecyl (meth) acrylate or decyl (meth) acrylate.
상기 가교성 관능기 함유 단량체의 예로는 히드록시기 함유 단량체, 카복실기 함유 단량체 또는 질소 함유 단량체의 일종 또는 이종 이상의 흔합을 들 수 있다.  Examples of the crosslinkable functional group-containing monomer include one or more kinds of hydroxy group-containing monomers, carboxyl group-containing monomers, or nitrogen-containing monomers.
상기 히드록실기 함유 화합물의 예로는, 2—히드록시에틸 (메타)아크릴레이트, . 2ᅳ히드록시프로필 (메타)아크릴레이트, 4- 히드록시부틸 (메타)아크릴레이트, 6-히드록시핵실 (메타)아크릴레이트, 8— 히드록시옥틸 (메타)아크릴레이트, 2-히드록시에틸렌글리콜 (메타)아크릴레이트, 또는 2-히드록시프로필렌글리콜 (메타)아크릴레이트 등을 들 수 있다.  Examples of the hydroxyl group-containing compound include 2—hydroxyethyl (meth) acrylate,. 2'Hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxynuclear (meth) acrylate, 8- hydroxyoctyl (meth) acrylate, 2-hydroxyethylene glycol (Meth) acrylate, or 2-hydroxypropylene glycol (meth) acrylate, etc. are mentioned.
상기 카르복실기 함유 화합물의 예로는ᅳ (메타)아크릴산, 2- (메타)아크릴로일옥시아세트산, 3- (메타)아크릴로일옥시프로필산, 4- (메타)아크릴로일옥시부틸산, 아크릴산 이중체, 이타콘산, 말레산, 또는 말레산 ϋ ^ α 드요 드 수 이 상기 질소 함유 단량체의 예로는 (메타)아크릴로니트릴, Ν-비닐 피를리돈 또는 Ν-비닐 카프로락탐 등을 들 수 있다.  Examples of the carboxyl group-containing compound include (meth) acrylic acid, 2- (meth) acryloyloxyacetic acid, 3- (meth) acryloyloxypropyl acid, 4- (meth) acryloyloxybutyl acid, acrylic acid double Sieve, itaconic acid, maleic acid, or maleic acid ϋ ^ α dode number Examples of such nitrogen-containing monomers include (meth) acrylonitrile, Ν-vinyl pyridone or Ν-vinyl caprolactam.
상기 (메타)아크릴레이트계 수지에는 또한 상용성 등의 기타 기능성 향상의 관점에서, 초산비닐, 스틸렌 또는 아크릴로니트릴 등아 추가로 포함될 수 있다.  The (meth) acrylate resin may further include vinyl acetate, styrene or acrylonitrile, etc., in view of improving other functionalities such as compatibility.
상기 점착층은 자외선 경화형 화합물을 더 포함할 수 있다 .  The adhesive layer may further include an ultraviolet curable compound.
상기 자외선 경화형 화합물의 종류는 특별히 제한되지 않으며, 예를 들면, 중량평균분자량이 500 내지 300 , 000 정도인 다관능성 화합물 (ex . 다관능성 우레탄 아크릴레이트, 다관능성 아크릴레이트 단량체 또는 을리고머 .등)을 사용할 수 있다. 이 분야의 평균적 기술자는 목적하는 용도에 따른 적절한 화합물을 용이하게 선택할 수 있다. 상기 자외선 경화형 화합물의 함량은 전술한 점착 수지 100 중량부에 대하여, 1 중량부 내지 400 중량부, 바람직하게는 5 중량부 내지 200 중량부일 수 있다. 자외선 경화형 화합물의 함량이 1 중량부 미만이면, 경화 후 점착력 저하가 층분하지 않아 픽업성이 떨어질 우려가 있고, 400 중량부를 초과하면, 자외선 조사 전 점착제의 응집력이 부족하거나, 이형 필름 등과의 박리가 용이하게 이루어지지 않을 우려가 있다. . The type of the ultraviolet curable compound is not particularly limited, and for example, a polyfunctional compound having a weight average molecular weight of about 500 to 300, 000 (ex. Polyfunctional urethane acrylate, polyfunctional acrylate monomer or oligomer, etc.). )of Can be used. The average person skilled in the art can easily select the appropriate compound according to the intended use. The content of the ultraviolet curable compound may be 1 part by weight to 400 parts by weight, preferably 5 parts by weight to 200 parts by weight, based on 100 parts by weight of the above-mentioned adhesive resin. If the content of the ultraviolet curable compound is less than 1 part by weight, there is a risk that the lowering of the adhesive strength after curing is not sufficient, and the pick-up property may be degraded. If the content of the ultraviolet curable compound exceeds 400 parts by weight, the cohesive force of the adhesive may be insufficient before peeling off the ultraviolet ray, There is a possibility that it may not be easily performed. .
상기 자외선 경화 점착제는 상기의 첨가형 자외선 경화형 화합물 뿐 아니라, 아크릴 공중합체에 탄소 -탄소 이중결합을 측쇄 또는 주쇄 말단에 결합된 형태로도 사용가능하다. 즉, (메타)아크릴계 공증합체는 또는 (메타)아크릴산 에스테르계 단량체 및 가교성 관능기 함유 단량체를 포함하는 주사슬의 측쇄에 결합된 자외선 경화형 화합물을 추가로 포함할 수 있다.  The ultraviolet curable pressure sensitive adhesive may be used in a form in which carbon-carbon double bonds are bonded to side chains or main chain ends of the acrylic copolymer, as well as the additive type ultraviolet curable compound. That is, the (meth) acrylic co-polymer may further include an ultraviolet curable compound bonded to the side chain of the main chain including the (meth) acrylic acid ester monomer and the crosslinkable functional group-containing monomer.
상기 자외선 경화형 화합물의 종류는, 광경화성 관능기 (ex . 자외선 중합성 탄소 -탄소 이중결합)를 한 분자당 1 내지 5개, 바람직하게는 1 또는 2개 포함하고, 또한 상기 주사슬에 포함되는 가교성 관능기와 반웅할 수 있는 관능기를 가지는 한 특별히 제한되지는 아니한다. 이때 주사슬의 가교성 관능기와 반웅할 수 있는 관능기의 예로는 이소시아네이트기 또는 에폭시기 등을 들 수 있으나, 이에 제한되는 것은 아니다. The type of the ultraviolet curable compound includes 1 to 5, preferably 1 or 2, photocurable functional groups (ex. Ultraviolet polymerizable carbon-carbon double bonds) per molecule, and is also included in the main chain. and a functional group capable of banung does not specifically limit having a functional group. At this time, examples of the crosslinkable functional group and the functional group that can be reacted include an isocyanate group or an epoxy group, but are not limited thereto.
상기 자외선 경화형 화합물의 구체적인 예로는 주사슬에 포함된 히드록시기와 반응할 수 있는 관능기를 포함하는 것으로서, (메타)아크릴로일옥시 이소시아네이트, (메타)아크릴로일옥시 메틸 이소시아네이트, 2- (메타)아크릴로일옥시 에틸 이소시아네이트, 3- (메타)아크릴로일옥시 프로필 이소시아네이트, 4- (메타)아크릴로일옥시 부틸 이소시아네이트, m-프로페닐 - α , α -디메틸.벤질이소시아네이트, 메타크릴로일이소시아네이트, 또는 알릴 이소시아네이트; 디이소시아네이트 화합물 또는 폴리이소시아네이트 화합물을 (메타)아크릴산 2ᅳ히드록시에틸과 반응시켜 얻어지는 아크릴로일 모노이소시아네이트 화합물; 디이소시아네이트 화합물 또는 폴리이소시아네이트 화합물, 폴리올화합물 및 (메타)아크릴산 2- 히드록시에틸을 반응시켜 얻어지는 아크릴로일 모노이소시아네이트 화합물; 또는 주사슬에 포함되는 카복실기와 반웅할 수 있는 관능기를 포함하는 것으로써 글리시딜 (메타)아크릴레이트 또는 알릴 글리시딜 에테르 등의 일종 또는 어종 이상을 들 수 있으나, 이에 제한되는 것은 아니다. Specific examples of the UV-curable compound include a functional group capable of reacting with a hydroxyl group included in the main chain, (meth) acryloyloxy isocyanate, (meth) acryloyloxy methyl isocyanate, 2- (meth) acrylic Loyloxy ethyl isocyanate, 3- (meth) acryloyloxy propyl isocyanate, 4- (meth) acryloyloxy butyl isocyanate, m-propenyl-α, α-dimethyl . Benzyl isocyanate, methacryloyl isocyanate, or allyl isocyanate; Acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with 2'hydroxyethyl (meth) acrylic acid; Acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound, a polyol compound, and 2-hydroxyethyl (meth) acrylate; Or comprising a carboxyl group and a functional group that can react with the main chain. One kind or fish species such as glycidyl (meth) acrylate or allyl glycidyl ether may be mentioned, but is not limited thereto.
상기 자외선 경화형 화합물은 주사슬에 포함된 가교성 관능기의 5몰% 내지 90몰%를 치환하여 베이스 수지의 측쇄에 포함될 수 있다. 상기 치환량이 5몰% 미만이면 자외선 조사에 의한 박리력 저하가 층분하지 않을 우려가 있고, 90몰¾를 초과하면 자외선 조사 전의 점착제의 웅집력이 저하될 우려가 있다. 상기 점착층은 로진 수지, 터펜 (terpene) 수지, 페놀 수지, 스티렌 수지 , 지방족 석유 수지 , 방향족 석유 수지 또는 지방족 방향족 공중합 석유 수지 등의 점착 부여제가 적절히 포함될 수 있다.  The ultraviolet curable compound may be included in the side chain of the base resin by substituting 5 mol% to 90 mol% of the crosslinkable functional groups included in the main chain. When the amount of substitution is less than 5 mol%, there is a risk that the peeling force decrease due to ultraviolet irradiation may not be divided, and when it exceeds 90 mol¾, the cohesion force of the pressure-sensitive adhesive before ultraviolet irradiation may be lowered. The adhesive layer may suitably include a tackifier such as rosin resin, terpene resin, phenol resin, styrene resin, aliphatic petroleum resin, aromatic petroleum resin or aliphatic aromatic copolymerized petroleum resin.
상기 점착층을 기재 필름 상에 형성하는 방법은 특별히 한정되지 않으며 , 예를 들면 기재 필름 상에 직접 본 발명의 점착제 조성물을 도포하여 점착층을 형성하는 방법 또는 박리성 기재 상에 일단 점착제 조성물을 도포하여 점착층을 제조하고, 상기 박리성 기재를 사용하여 점착층을 기재 필름 상에 전사하는 방법 등을 사용할 수 있다. A method of forming the adhesive layer on the base film does not i being particularly limited, for example, once the pressure-sensitive adhesive composition on a substrate by coating a pressure-sensitive adhesive composition of the present invention directly on the film method of forming a pressure-sensitive adhesive layer or a releasable base The pressure-sensitive adhesive layer may be coated to prepare an pressure-sensitive adhesive layer, and a method of transferring the pressure-sensitive adhesive layer onto a base film using the peelable base material may be used.
상기 점착제 조성물을 도포 및 건조하는 방법은 특별히 한정되지 않으며, 예를 들면 상기 각각의 성분을 포함하는 조성물을 그대로, 또는 적당한 유기용제에 희석하여 콤마 코터, 그라비아 코터, 다이 코터 또는 리버스 코터 등의 공지의 수단으로 도포한 후, 6(rc 내지 2(xrc의 온도에서 10초 내지 30분 동안 용제를 건조시키는 방법을. 사용할 수 있다. 또한, 상기 과정에서는 점착제의 충분한 가교 반응을 진행시키기 위한 에이징 (aging) 공정을 추가적으로 수행할 수도 있다. 한편, 발명의ᅵ 다른 구현예에 따르면, 상기 다이싱 필름 및 상기 다이싱 필름의 적어도 일면에 형성된 접착층을 포함하는, 다이싱 다이본딩 필름이 제공될 수 있다.  The method of applying and drying the pressure-sensitive adhesive composition is not particularly limited, and for example, a composition including each of the above components may be used as it is, or diluted in a suitable organic solvent, such as a comma coater, gravure coater, die coater or reverse coater. After application by means of 6 (rc to 2 (xrc), a method of drying the solvent for 10 seconds to 30 minutes at a temperature of xrc may be used. In addition, in the above process, an aging process for advancing a sufficient crosslinking reaction of the pressure-sensitive adhesive ( On the other hand, according to another embodiment of the present invention, a dicing die-bonding film, including a dicing film and an adhesive layer formed on at least one surface of the dicing film may be provided. .
상기 접착층은 열가소성 수지, 에폭시 수지 및 경화제를 포함할 수 있다. 상기 열가소성 수지는 폴리이미드, 폴리에테르 이미드, 폴리에스테르 이미드, 폴리아미드, 폴리에테르 술폰, 폴리에테르 케톤, 폴리올레핀, 폴리염화비닐, 페녹시, 반웅성 부타디엔 아크릴로 니트릴 공중합 고무 및 (메타)아크릴레이트계 수지로 이루어진 군으로부터 선택된 하나 이상의 고분자 수지를 포함할 수 있다. The adhesive layer may include a thermoplastic resin, an epoxy resin, and a curing agent. The thermoplastic resin may be polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, semi-butadiene acrylonitrile copolymer rubber and (meth) acrylic One or more polymers selected from the group consisting of rate-based resins Resin may be included.
상기 에폭시 수지에는 이 분야에서 공지된 일반적인 접착제용 .에폭시 수지가 포함될 수 있으며, 예를 들면, 분자 내에 2개 이상의 에폭시기를 함유하고, 중량평균분자량이 100 내지 2 , 000인 에폭시 수지를 사용할 수 있다. 상기 에폭시 수지는 경화 공정을 통해 하드한 가교 구조를 형성하여, 탁월한 접착성, 내열성 및 기계적 강도를 나타낼 수 있다. 보다 구체적으로 상기 에폭시 수지는 평균 에폭시 당량이 100 내지 1 , 000인 에폭시 수지를 사용하는 것이 바람직하다. 상기 에폭시 수지의 에폭시 당량이 100 미만이면, 가교 밀도가 지나치게 높아져서, 접착 필름이 전체적으로 딱딱한 성질을 나타낼 우려가 있고, ι , οοο을 초과하면, 내열성이 저하될 우려가 있다.  The epoxy resin may include an epoxy resin for general adhesives known in the art, and for example, an epoxy resin containing two or more epoxy groups in a molecule and having a weight average molecular weight of 100 to 2,000 may be used. . The epoxy resin may form a hard crosslinked structure through a curing process, and may exhibit excellent adhesion, heat resistance, and mechanical strength. More specifically, it is preferable that the epoxy resin uses an epoxy resin having an average epoxy equivalent of 100 to 1,000. When the epoxy equivalent of the said epoxy resin is less than 100, a crosslinking density may become high too much, and there exists a possibility that an adhesive film may show a hard property as a whole, and when it exceeds ι and οοο, heat resistance may fall.
상기 에폭시 수지의 예로는, 비스페놀 A 에폭시 수지 또는 비스페놀 F 에폭시 수지 등의 이관능성 에폭시 수지; 또는 크레졸 노볼락 에폭시 수지, 페놀 노볼락 쎄폭시 수지, 4관능성 에폭시 수지, 비페닐형 에폭시 수지, 트리페놀메탄형 에폭시 수지, 알킬 변성 트리페놀메탄형 에폭시 수지, 나프탈렌형 에폭시 수지, 디시클로펜타디엔형 에폭시 수지 또는 디시클로펜타디엔 변성 페놀형 에폭시 수지 등의 3개 이상의 관능기를 가지는 다관능성 에폭시 수지의 일종 또는 이종 이상을 들 수 있으나, 이에 제한되는 것은 아니다.  Examples of the epoxy resin include bifunctional epoxy resins such as bisphenol A epoxy resin or bisphenol F epoxy resin; Or cresol novolac epoxy resin, phenol novolac sepoxy resin, tetrafunctional epoxy resin, biphenyl type epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane type epoxy resin, naphthalene type epoxy resin, dicyclopenta One kind or two or more kinds of polyfunctional epoxy resins having three or more functional groups, such as a diene type epoxy resin or a dicyclopentadiene-modified phenol type epoxy resin, are not limited thereto.
또한, 상기 에폭시 수지로서 이관능성 에폭시 수지 및 다관능성 에폭시 수지의 흔합 수지를 사용하는 것이 바람직하다. 본 명세서에서 사용하는 용어 Moreover, it is preferable to use the mixed resin of a bifunctional epoxy resin and a polyfunctional epoxy resin as said epoxy resin. Terminology used herein
『다관능성 에폭시 수지』 는 3개 이상의 관능기를 가지는 에폭시 수지를 의미한다. 즉, 일반적으로 이관능성 에폭시 수지는 유연성 및 고온에서의 흐름성 등은 우수하나, 내열성 및 경화 속도가 떨어지는 반면, 관능기가 3개 이상인 다관능성 에폭시 수지는 경화 속도가 빠르고, 높은 가교 밀도로 인해 탁월한 내열성을 보이나, 유연성 및 흐름성이 떨어진다. 따라서 상기 두 종류의 수지를 적절히 흔합, 사용함으로 해서, 접착층의 탄성률 및 택 (tack) 특성을 제어하면서도, 다이싱 공정 시에 칩의 비산이나 버의 발생을 억제할 수 있다. 상기 접착층에 포함되는 경화제는 상기 에폭시 수지 및 /또는 열가소성 수지와 반응하여, 가교 구조를 형성할 수 있는 것이라면 특별히 제한되지 않으며, 예를 들어 상기 경화제는 페놀계 수지, 아민계 경화제, 및 산무수물계 경화제로 이루어진 군에서 선택된 1종 이상의 화합물을 포함할 수 있다. "Multifunctional epoxy resin" means an epoxy resin having three or more functional groups. That is, in general, bifunctional epoxy resins are excellent in flexibility and flowability at high temperatures, but are poor in heat resistance and curing rate, whereas polyfunctional epoxy resins having three or more functional groups are fast in curing rate and excellent in high crosslinking density. Heat resistance, but flexibility and flowability is poor. Therefore, by appropriately mixing and using the above two kinds of resins, it is possible to suppress the scattering of chips and the generation of burrs during the dicing process while controlling the elastic modulus and tack characteristics of the adhesive layer. The curing agent included in the adhesive layer is not particularly limited as long as it can react with the epoxy resin and / or thermoplastic resin to form a crosslinked structure. For example, the curing agent is a phenolic resin, an amine curing agent, and an acid anhydride type. As hardener It may include one or more compounds selected from the group consisting of.
상기 접착층은 상기 에폭시 수지 100중량부 대비 상기 열가소성 수지 10 내지 1 , 000중량부 및 상기 경화제 10 내지 700중량부를 포함할 수 있다.  The adhesive layer may include 10 to 1,000 parts by weight of the thermoplastic resin and 10 to 700 parts by weight of the curing agent relative to 100 parts by weight of the epoxy resin.
상기 경화 촉매는 상기 경화제의 작용이나 상기 반도체 접착용 수지 조성물의 경화를 촉진 시키는 역할을 하며, 반도체 접착 필름 등의 제조에 사용되는 것으로 알려진 경화 촉매를 큰 제한 없이 사용할 수 있다. 예를 들어, 상기 경화 촉매로는 인계 화합물, 붕소계 화합물 및 인-붕소계 화합물 및 이미다졸계 화합물로 이루어진 군에서 선택된 1종 이상을 사용할 수 있다. 상기 경화 촉매의 사용량은 최종 제조되는 접착 필름의 물성 등을 고려하여 적절히 선택할 수 있으며, 예를 들어 상기 에폭시 수지, (메타)아크릴레이트계 수지 및 페놀 수지의 총합 100 중량부를 기준으로 0.5 내지 10중량부로 사용될 수 있다. 상기 다이싱 다이본딩 필름은또한, 상기 접착층 상에 형성된 이형필름을 추가로 포함할 수 있다. 사용될 수 있는 이형필름의 예로는 폴리에틸렌테레프탈레이트 필름, 플리테트라플루오로에틸렌 필름, 폴리에틸렌 필름, 폴리프로필렌 필름, 폴리부텐 필름, 폴리부타디엔 필름, 염화비닐공중합체 필름 또는 폴리이미드 필름 등의 일종 또는 이종 이상의 플라스틱 필름을 들 수 있다.  The curing catalyst plays a role of promoting the action of the curing agent and curing of the resin composition for semiconductor bonding, and a curing catalyst known to be used in the manufacture of a semiconductor adhesive film or the like can be used without great limitation. For example, the curing catalyst may be one or more selected from the group consisting of phosphorus compounds, boron compounds, phosphorus-boron compounds and imidazole compounds. The amount of the curing catalyst may be appropriately selected in consideration of physical properties of the adhesive film to be finally prepared, for example, 0.5 to 10 weight based on a total of 100 parts by weight of the epoxy resin, the (meth) acrylate resin, and the phenol resin. Can be used as a wealth. The dicing die-bonding film may further include a release film formed on the adhesive layer. Examples of the release film that can be used include one or more kinds of polyethylene terephthalate film, pletetrafluoroethylene film, polyethylene film, polypropylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film or polyimide film and the like. Plastic films;
상기와 같은 이형필름의 면은 알킬드계, 실리콘계, 불소계, 불포화에스테르계, 폴리을레핀계 또는 왁스계등의 일종 또는 이종 이상으로 이형 처리되어 있을 수 있으며, 이중 특히 내열성을 가지는 알키드계, 실리콘계 또는 불소계 등의 이형제가 바람직하다.  The surface of the release film as described above may be released by one or more kinds of alkylide, silicone, fluorine, unsaturated ester, polyolefin, or wax or the like, and among these, alkyd, silicone, or fluorine based, particularly having heat resistance. Mold release agents, such as these, are preferable.
이형필름은 통상 5 내지 500 ^m , 바람직하게는 10 卿내지 200 정도의 두께로 형성될 수 있으나, 이에 제한되는 것은 아니다.  The release film is usually 5 to 500 ^ m, preferably may be formed in a thickness of about 10 to 200, but is not limited thereto.
상술한 다이싱 다이본딩 필름을 제조하는 방법은 특별히 한정되지 않으며, 예를 들면, 기재필름상에 점착부, 접착부 및 이형 필름을 순차로 형성하는 방법, 또는 다이싱필름 (기재필름+점착부) 및 다이본딩 필름 또는 접착부가 형성된 이형필름을 별도로 제조한 후, .이를 라미네이션 시키는 방법 등이 사용될 수 있다. The method for producing the above-mentioned dicing die-bonding film is not particularly limited, and for example, a method of sequentially forming an adhesive part, an adhesive part and a release film on a base film, or a dicing film (base film + adhesive part) And separately preparing a release film having a die-bonding film or an adhesive part formed thereon . A method of laminating it may be used.
상기에서 라미네이션 방법은 특별히 한정되지 않으며, 핫를라미네이트 또는 적층프레스법을 사용할 수 있고 이중 연속공정 가능성 및 효율성 측면에서 핫롤라미네이트법이 바람직하다. 핫를라미네이트법은 icrc내지 loo °c의 온도에서Lamination method in the above is not particularly limited, hot lamination or lamination press method can be used in terms of double continuous process possibility and efficiency The hot roll lamination method is preferable. Hot lamination method is at icrc to loo ° c
0. 1 Kgf/cuf내지 10 Kgf/ciif의 압력으로 수행될 수 있으나, 이에 제한되는 것은 아니다. 한편, 발명의 또 다른 구현예에 따르면, 상기 다이싱 다이본딩 필름; 및 상기 다이싱 다이본딩 필름의 적어도 일면에 적층된 웨이퍼;를 포함하는 반도체 웨이퍼를 완전 분단 또는 분단 가능하게 부분 처리하는 전처리 단계; 상기 전처리한 반도체 웨이퍼의 기재 필름에 자외선을 조사하고, 상기 반도체 웨이퍼의 분단에 의해 분리된 개별 칩들을 픽업하는 단계를 포함하는, 반도체 웨이퍼의 다이싱 방법이 제공될 수 있다. It may be performed at a pressure of 0.1 Kgf / cuf to 10 Kgf / ciif, but is not limited thereto. On the other hand, according to another embodiment of the invention, the dicing die bonding film; And a wafer stacked on at least one surface of the dicing die-bonding film; a pre-processing step of partially or partially dividing the semiconductor wafer. Irradiating ultraviolet rays to the base film of the pre-processed semiconductor wafer, and picking up the individual chips separated by the division of the semiconductor wafer, a dicing method of a semiconductor wafer can be provided.
상기 다이싱 다이본딩 필름에 관한 내용을 상술한 내용을 모두 포함한다. 상기 다이싱 방법의 세부 단계에 관한 내용을 제외하고, 통상적으로 알려진 반도체 웨이퍼의 다이싱 방법에 사용되는 장치, 방법 등을 별 다른 제한 없이 사용할 수 있다.  It includes all the above-mentioned content regarding the dicing die-bonding film. Except for the detailed steps of the dicing method, a device, a method, and the like, which are commonly used for the dicing method of a known semiconductor wafer, may be used without particular limitation.
상기 다이성 필름을 포함한 다이싱 다이본딩 필름을 사용함에 따라서, 반도체 패키징 공정의ᅵ 다이싱 과정에서 픽업성을 향상시키고 박형화된 반도체 칩의 손상을 방지 수 있다. 발명의 구체적인 구현예를 하기의 실시예에서 보다 상세하게 설명한다. 단, 하기의 실시예는 발명의 구체적인 구현예를 예시하는 것일 뿐, 본 발명의 내용이 하기의 실시예에 의하여 한정되는 것은 아니다. [제조예: (메타)아크릴레이트게 수지의 제조]  By using the dicing die-bonding film including the die film, it is possible to improve the pickup properties during the dicing process of the semiconductor packaging process and to prevent damage to the thinned semiconductor chip. Specific embodiments of the invention are described in more detail in the following examples. However, the following examples are merely to illustrate specific embodiments of the invention, the content of the present invention is not limited by the following examples. Preparation Example: Production of (meth) acrylate Crab Resin
제조예 1  Preparation Example 1
질소가스가 환류되고 온도조절이 용이하도록 넁각장치를 설치한 반웅기에 하기 표 1에 나타낸 조성과 같이 2-에틸핵실 아크릴레이트 (2-EHA) 68.5중량부, 메틸 아크릴레이트 (MA) 8.5중량부와 히드록시에틸아크릴레이트 (HEA) 23중량부로 구성되는 단ᅳ량체들의 흔합물을 투입하였다.  68.5 parts by weight of 2-ethylnuclear acrylate (2-EHA), 8.5 parts by weight of methyl acrylate (MA), as shown in Table 1, in a reaction vessel equipped with a nitrogen gas to reflux the nitrogen gas to facilitate temperature control. And a mixture of monomers composed of 23 parts by weight of hydroxyethyl acrylate (HEA).
이어서, 상기 단량체 흔합물 100중량부를 기준으로 사슬이동제 (CTA : chain transfer agent )인 n_DDM 400pm과 용제로써 에틸아세테이트 (EAc) 100중량부를 투입하고, 상기 반응기 내에 산소를 제거하기 위해 질소를 주입하면서 3(rc에서Subsequently, based on 100 parts by weight of the monomer mixture, 400 parts of n_DDM which is a chain transfer agent (CTA) and 100 parts by weight of ethyl acetate (EAc) as a solvent. 3, in rc while injecting nitrogen to remove oxygen into the reactor
30분 이상 층분히 흔합하였다. 이후 온도는 62°C로 상승 유지하고, 반응개시제인 V-60 ( Azob i s i sobut y 1 on i t r i 1 e ) 300ppm의 농도를 투입하고 반응을 개시시킨 후 6시간 중합하여 1차 반응물을 제조하였다. 상기 1차 반응물에 2—메타크로일옥시에틸이소시아네이트 (M0I) 24.6중량부 (1차 반웅물 내의 HEA에 대하여 80몰 ¾ 및 M0I 대비 1중량 %의 촉매 (DBTDL:dibutyl tin dilaurate)를 배합하고, 40°C에서 24시간 동안 반응시켜 1차 반응물 내의 중합체 측쇄에 자외선 경화기를 도입하여 (메타)아크릴레이트계 고분자 수지를 제조하였다 (유리전이온도: -38.2°C). 제조예 2내지 5 The mixture was mixed well for 30 minutes or more. Thereafter, the temperature was maintained at 62 ° C., and a concentration of 300 ppm of the initiator V-60 (Azob isi sobut y 1 on itri 1 e) was added thereto, and the reaction was initiated. 24.6 parts by weight of 2—methacryloyloxyethylisocyanate (M0I) to the primary reactant (80 mol ¾ of HEA and 1% by weight of catalyst (DBTDL: dibutyl tin dilaurate) relative to HEA in the primary coarse water), Reaction was carried out at 40 ° C for 24 hours to introduce an ultraviolet curing group to the polymer side chain in the primary reactant to prepare a (meth) acrylate-based polymer resin (glass transition temperature: -38.2 ° C.) Preparation Examples 2 to 5
표 1에 나타낸 조성을 제외하고는 상기 제조예 1과 동일한 방법으로 (메타)아크릴레이트계 고분자 수지를 제조하였다  A (meth) acrylate polymer resin was prepared in the same manner as in Preparation Example 1, except for the composition shown in Table 1.
【표 1】 Table 1
Figure imgf000013_0001
Figure imgf000013_0001
2-EHA: 2-에틸 핵실 아크릴레이트  2-EHA: 2-ethyl nucleus acrylate
MA: 메틸 아크릴레이트  MA: methyl acrylate
EHMA: 2-에틸 핵실 메타아크릴레이트  EHMA: 2-ethyl nuclear chamber methacrylate
HEA: 하이드록시 에틸 아크릴레이트  HEA: hydroxy ethyl acrylate
M0I: 2-메타크로일옥시에틸이소시아네이트 [제조예: 다이심 필름, 다이본딩 필름 및 다이싱 다이본딩 필름의 제조] 실시예 1 M0I: 2-Methacroyloxyethylisocyanate Preparation Example: Production of Disim Film, Die Bonding Film, and Dicing Die Bonding Film Example 1
(1) 다이본딩 필름의 제조  (1) Production of die bonding film
고분자량 아크릴 수지 (Tg 20 °C , 중량 평균분자량 85만) 90 g와 에폭시 수지 (노볼락형 에폭시 수지, 연화점 94°C ) 30 g, 에폭시 수지의 경화제로 페놀수지 (페놀 노볼락 수지 , 연화점 94°C ) 20 g , 중온 개시 경화 촉진제 (2-메틸 이미다졸) O . lgᅳ 고온 개시 경화 촉진제 (2ᅳ페닐—4-메틸 -이미다졸) 0.5 g, 충진제로 실리카 (평균입경 75匪) 20 g 이루어진 조성물과 메틸에틸케톤을 교반 흔합하였다. 90 g of high molecular weight acrylic resin (Tg 20 ° C, weight average molecular weight 850,000) and 30 g of epoxy resin (novolak-type epoxy resin, softening point 94 ° C), phenolic resin (phenol novolak resin, softening point) 94 ° C) 20 g, moderate temperature onset curing accelerator (2-methyl imidazole) O. 0.5 g of a high temperature start hardening accelerator (2 'phenyl- 4-methyl- imidazole), the composition which consists of 20 g of silica (average particle diameter: 75 kPa) as a filler, and methyl ethyl ketone were stirred and mixed.
이를 이형 처리된 두께 38um의 PET에 도포하고, 11CTC에서 3분간 건조하여 도막 두께 20um인 다이본딩 필름을 제조하였다.  This was applied to a release-treated thickness 38um PET, dried for 3 minutes at 11CTC to prepare a die-bonding film having a coating thickness of 20um.
(2) 다이싱 필름의 제조  (2) production of dicing film
상기 제조예 1의 (메타)아크릴레이트계 고분자 수지 100 g에 TE)I계 이소시아네이트 경화제 7 g, 및 광개시제 ( Irgacure 184) 3 g을 흔합하여 점착제 조성물을 제조하였다.  A pressure-sensitive adhesive composition was prepared by mixing 7 g of TE) I-based isocyanate curing agent and 3 g of photoinitiator (Irgacure 184) with 100 g of the (meth) acrylate polymer resin of Preparation Example 1.
상기 점착제 조성물을 이형 처리된 두께 38um의 PET에 도포하고, 110°C에서 3분 동안 건조하여 두께 10訓인 점착제층을 형성하였다. 형성된 점착제층을 lOOum 폴리 올레핀 기재필름에 합지 후 에이징을 거쳐 다이싱 필름을 제조하였다. The pressure-sensitive adhesive composition was applied to a release-treated thickness 38um PET, and dried at 110 ° C for 3 minutes to form a pressure-sensitive adhesive layer having a thickness of 10 訓. The formed pressure-sensitive adhesive layer was laminated on a 100% polyolefin base film and then subjected to aging to prepare a dicing film.
또한, 상기의 이형처리된 두께 38um PET에 형성된 점착제층을 동일한 이형처리된. PET에 합지 후 에이징을 거쳐 점착제의 저장탄성률을 측정하는데 사용하였다.  In addition, the pressure-sensitive adhesive layer formed on the release-treated thickness 38um PET was the same release treatment. After lamination to PET, it was used to measure the storage modulus of the adhesive after aging.
(3) 다이싱 다이본딩 필름 제조  (3) Dicing die bonding film manufacturing
상기 제조된 다이싱 필름에 원형으로 절단된 다이 본딩 필름을 5kgf/cm2의 조건으로 합지를 통해 전사한 후 다이싱 다이본딩 필름을 제조하였다. 실시예 2 내지 5 및 비교예 1 내지 4 A dicing die bonding film was prepared after transferring the die bonding film circularly cut into the prepared dicing film through paper under a condition of 5 kgf / cm 2 . Examples 2-5 and Comparative Examples 1-4
다이싱 필름 제조시 하기 표 2에 기재된 (메타)아크릴레이트계 고분자 수지를 사용한 점을 제외하고는 실시예 1과 동일한 방법으로 다이싱 다이 본딩 필름을 제조하였다. Dicing die bonding in the same manner as in Example 1 except for the use of the (meth) acrylate-based polymer resin shown in Table 2 in the manufacture of the dicing film A film was prepared.
【표 2】  Table 2
Figure imgf000015_0001
실험예
Figure imgf000015_0001
Experimental Example
상기 실시예 및 비교예의 다이싱 다이본딩 필름에 대하여 하기 방법으로 물성을 평가하고, 그 결과를 표 3에 나타내었다.  The physical properties of the dicing die-bonding films of the Examples and Comparative Examples were evaluated by the following methods, and the results are shown in Table 3.
[실험예 1: 점착제 저장탄성률] Experimental Example 1: Adhesive Storage Modulus
상기 실시예 및 비교예의 [다이싱 필름의 제조]에 기재된 바와 같이, 이형 처리된 PET 필름 (두께 38um)에 형성된 lOum 두께의 점착제층을 이형 처리된 PET 필름 (두께 38um)에 합지 후 에이징된 샘플을 이용하여 , 점착층을 여러장 적층하여 두께 1隱의 점착제 샘플을 제조하였다.  As described in [Production of Dicing Film] of the Examples and Comparative Examples, the sample aged after laminating a 10 μm thick adhesive layer formed on the release treated PET film (thickness 38 μm) to the release treated PET film (thickness 38 μm) Using the above, several adhesive layers were laminated | stacked, and the adhesive sample of thickness 1 隱 was manufactured.
상기 제조된 두께 1mm의 측정 샘플을 길이 17mm , 폭 5ι丽의 직사각형 모양으로 커팅한 후 DMA(Dynami c Mechani cal Analys i s , TA instrument 사)를 이용하여 주파수 1Hz , pre-load force 0.01 N , 승온속도 10 °C /분 조건으로 - 30 °C에서 15CTC의 저장탄성률을 측정하였다. 이렇게 측정된 3( C와 80°C에서 점착제의 저장탄성률 (Pa )을 표 3에 나타내었다. The prepared measurement sample of thickness 1mm was cut into a rectangular shape having a length of 17mm and a width of 5ι. And then DMA (Dynami c Mechani cal Analys is, TA instrument) using a frequency of 1Hz, pre-load force 0.01 N, heating rate The storage modulus of 15 CTC was measured at -30 ° C at 10 ° C / min. Table 3 shows the storage modulus (Pa) of the pressure sensitive adhesive at 3 (C and 80 ° C ) .
[실험예 2: 점착제 가교밀도] Experimental Example 2: Adhesive Crosslink Density
상기 이형 처리된 PET에 형성된 lOum 두께 점착제층을 이형처리된 PET에 합지 후 에이징된 샘플에서 점착제층만 0.5g(a) 취득하여 용제 에틸아세테이트 After lOum thickness adhesive layer formed on the release-treated PET was laminated to the release-treated PET, 0.5g (a) of the adhesive layer was obtained from the aged sample, and solvent ethyl acetate was obtained.
200g에 1일간 담궈두었다. 그리고, 상기 점착제층이 담긴 용제를 중량을 측정한It was soaked in 200g for 1 day. And, the weight of the solvent containing the pressure-sensitive adhesive layer
200메쉬철망 (c)에 거른 후 80°C에서 1시간 건조 후 중량 (b)을 측정하였다. After filtering to 200 mesh mesh (c) and dried for 1 hour at 80 ° C. The weight (b) was measured.
그리고, 하기 식으로 가교밀도를 측정하여 표 3에 나타내었다. 가교밀도 (%) = [ (건조 후 점착제와 철망 중량 b - 철망 중량 c ) I (초기중량 a) ] X 100 And the crosslinking density was measured by the following formula and shown in Table 3. Crosslinking density (%) = [(weight of adhesive and wire mesh after drying b-weight of wire mesh c) I (initial weight a)] X 100
[실험예 3 : 점착력 측정] Experimental Example 3: Adhesion Measurement
상기 실시예 및 비교예에서 제조된 다이싱 다이본딩 필름을 폭 25ι画가 되도록 커팅한 후 광량 300mJ/cm2 (조도 70n]W/cm2) 조.건의 자외선을 다이싱 필름의 기재면에서 조사하여 점착력 측정 샘플을 준비하였다. After cutting the dicing die-bonding film prepared in Examples and Comparative Examples to a width of 25ι 画, irradiated with ultraviolet light of 300mJ / cm 2 (roughness 70n] W / cm 2 ) light. To prepare a sample for measuring adhesion.
상기 준비된 샘플을 상온에서 180도 각도로 속도 300醒 /s 조건으로 다이싱에서 다이본딩 필름을 박리하는 힘 (gf/25i丽)을 측정한 후 그 결과값을 표 3에 나타내었다.  The prepared sample was measured at a temperature of 180 degrees at room temperature at a speed of 300 kV / s, and the force (gf / 25 i 丽) of peeling the die-bonding film in dicing was measured, and the results are shown in Table 3 below.
[실험예 4: 픽업성] Experimental Example 4: Pickup Properties
상기 실시예 및 비교예에서 제조된 다이싱 다이본딩 필름의 이형필름을 벗겨낸 후 다이본딩면을 미러 웨이퍼 (8인치, 두께 80uni)에 온도 60 °C에서 마운팅한 후 칩 크기가 10腿 X 10麵 가 되도록 하기 조건으로 다이싱을 실시하였다. After peeling off the release film of the dicing die-bonding film prepared in Examples and Comparative Examples, the die-bonding surface was mounted on a mirror wafer (8 inches, thickness 80uni) at a temperature of 60 ° C and the chip size was 10 腿 X 10 Dicing was performed on the following conditions so that it might become kPa.
이어 다이성된 샘플에 광량 300mJ/cm2 (조도 70mW/cm2) 조건의 자외선을 다이싱 필름의 기재면에서 조사하여 픽업측정샘플을 준비하였다. Then, the picked-up measurement sample was prepared by irradiating an ultraviolet-ray with a light quantity of 300 mJ / cm 2 (roughness 70 mW / cm 2 ) to the diced sample on the substrate surface of the dicing film.
상기 준비된 샘플을 SPA-400(SHINKAWA) 이용하여 하기의 조건으로 픽업을 시행하여 성공률을 측정한 결과를 표 3에 나타내었다.  Table 3 shows the results of measuring the success rate by using the SPA-400 (SHINKAWA) to prepare the sample under the following conditions.
-다이싱 조건- 기기 : DFD-650 (DISCO)  -Dicing Condition- Equipment : DFD-650 (DISCO)
블레이드 타입 : 27HEBB(DISC0)  Blade type : 27HEBB (DISC0)
커팅 블레이드 높이 (cut depth) : 80腿  Cutting blade height (cut depth) : 80 腿
다이싱 스피드 : 5()mm/s  Dicing Speed : 5 () mm / s
' 블레이드 회전수 : 40 , 000 rpm "Blade revolutions: 40, 000 rpm
—픽업 조건- 기기 : SPA-40CKSHINKAWA) —Pick-up condition-Equipment : SPA-40CKSHINKAWA)
익스펜딩 높이 : 3mm 니들 개수 : 10개 Expanding Height : 3mm Number of needles : 10
니들 올림 높이 (needle iunge up height ) : 0.2隱  Needle iunge up height : 0.2 隱
니들 을림 속도 (needle piunge up speed) : 10mm/ s  Needle piunge up speed : 10mm / s
【표 3] [Table 3]
Figure imgf000017_0001
상기 표 3에서 확인되는 바와 같이, 실시예 1 내지 5의 점착층은 30°C에서 3.0*105 내지 2 :O106 의 저장 탄성율 및 80°C에서 1. O105 Pa 이상의 저장 탄성율 및 80% 내지 99%의 가교 밀도를 갖는데, 이에 따라 접착층 및 점착층이 분리시 박형화된 칩에 손상이 발생하지 않으며 픽업성을 높일 수 있는 것으로 확인되었다.
Figure imgf000017_0001
As confirmed in Table 3, the adhesive layer of Examples 1 to 5 has a storage modulus of 3.0 * 10 5 to 2: O10 6 at 30 ° C and a storage modulus of 80 ° C or higher at 1.O10 5 Pa and 80% at 80 ° C. It has a cross-linking density of 99% to 99. Thus, when the adhesive layer and the adhesive layer are separated, it is confirmed that damage to the thinned chip does not occur and the pickup property can be improved.
이에 반하여, 비교예 1 및 2의 점착충은 점착제의 가교 밀도가 너무 낮거나 (비교예 1), 30 °C에서 저장 탄성율이 너무 높아서 (바교예 2) 픽업 성공율이 70%이하가 된다는 점이 확인되었다. In contrast, the tackifiers of Comparative Examples 1 and 2 confirmed that the crosslinking density of the adhesive was too low (Comparative Example 1) or the storage elastic modulus was too high at 30 ° C. It became.

Claims

【특허청구범위】 【Patent Claims】
【청구항 11 【Claim 11
기재 필름; 및 점착층을 포함하고, base film; and an adhesive layer,
상기 점착층의 저장탄성률이 30 °C에서 3*105 내지 4*106 Pa이며, The storage modulus of the adhesive layer is 3*10 5 to 4*10 6 Pa at 30 ° C,
상기 점착층의 가교 밀도가 80% 내지 99%인, 다이싱 필름. A dicing film wherein the adhesive layer has a crosslinking density of 80% to 99%.
【청구항 2] [Claim 2]
계 1항에 있어서, In paragraph 1,
상기 점착층의 저장탄성를이 80°C에서 1.0*105 Pa 이상인, 다이싱 필름. A dicing film where the storage elasticity of the adhesive layer is 1.0*10 5 Pa or more at 80 ° C.
' '
【청구항 3] [Claim 3]
거 U항에 있어서, In clause U,
상기 점착층은 점착 수지, 광개시제 및 가교제를 포함하는, 다이성 필름. The adhesive layer is a die-cast film comprising an adhesive resin, a photoinitiator, and a crosslinking agent.
【청구항 4】 【Claim 4】
게 3항에 있어서, In paragraph 3,
상기 점착 수지는 -28 °C 내지 -58°C의 유리 전이 온도를 갖는 (메타)아크릴레이트계 수지를 포함하는, 다이싱 필름. The adhesive resin is a dicing film comprising a (meth)acrylate-based resin having a glass transition temperature of -28 ° C to -58 ° C.
【청구항 5】 【Claim 5】
거 13항에 있어서, In paragraph 13,
상기 가교제는 이소시아네이트계 화합물, 아지리딘계 화합물, 에폭시계 화합물 및 금속 킬레이트계 화합물로 이루어진 군에서 선택된 1종 이상의 화합물을 포함하는, 다이싱 필름. The crosslinking agent is a dicing film comprising at least one compound selected from the group consisting of isocyanate-based compounds, aziridine-based compounds, epoxy-based compounds, and metal chelate-based compounds.
【청구항 6】 【Claim 6】
제 3항에 있어서, ' In clause 3, '
상기 점착층은 상기 점착 수지 100중량부 대비 광개시제 0. 1 내지 20중량부 및 ' 가교제 0. 1 내지 40중량부를 포함하는, .다이싱 필름. The adhesive layer includes 0.1 to 20 parts by weight of a photoinitiator and 0.1 to 40 parts by weight of a crosslinking agent, based on 100 parts by weight of the adhesive resin. A dicing film.
【청구항 7] [Claim 7]
계 1항에 있어서, In paragraph 1,
상기 기재필름은 폴리을레핀 필름, 폴리에스테르 필름, 폴리카보네이트 필름, 폴리염화비닐 필름, 폴리테트라플루오로에틸렌 필름, 폴리부텐 필름, 폴리부타디엔 필름, 염화비닐 공중합체 필름, 에틸렌-초산비닐 공중합체 필름, 에틸렌-프로필렌 공중합체 필름, 및 에틸렌—알킬아크릴레이트 공중합체 필름으로 이루어지는 군으로부터 선택된 하나의 고분자 필름인, 다이싱 필름. The base film includes polyolefin film, polyester film, polycarbonate film, polyvinyl chloride film, polytetrafluoroethylene film, polybutene film, polybutadiene film, vinyl chloride copolymer film, ethylene-vinyl acetate copolymer film, A dicing film, which is a polymer film selected from the group consisting of ethylene-propylene copolymer film and ethylene-alkylacrylate copolymer film.
【청구항 8】 【Claim 8】
게 1항에 있어서, In paragraph 1,
상기 기재 필름은 10 내지 200 卿의 두께를 갖고, The base film has a thickness of 10 to 200 卿,
상기 점착층은 5 ΐ 내지 100 의 두께를 갖는, 다이싱 필름. The adhesive layer has a thickness of 5 ΐ to 100, a dicing film.
【청구항 9】. 【Claim 9】.
. 제 1항의 다이싱 필름; 및 상기 다이싱 필름의 적어도 일면에 형성된 접착층을 포함하는, 다이싱 다이본딩 필름. . The dicing film of claim 1; And a dicing die-bonding film comprising an adhesive layer formed on at least one side of the dicing film.
【청구항 10】 【Claim 10】
제 9항에 있어서, In clause 9,
상기 접착층은 열가소성 수지, 에폭시 수지 및 경화제를 포함하는, 다이성 다이본딩 필름. The adhesive layer is a die-bonding film containing a thermoplastic resin, an epoxy resin, and a curing agent.
【청구항 11】 【Claim 11】
거 19항에 있어서, In paragraph 19,
상기 열가소성 수지는 폴리이미드, 폴리에테르 이미드, 폴리에스테르 이미드, 폴리아미드, 폴리에테르 술폰, 폴리에테르 케톤, 폴리올레핀, 폴리염화비닐, 페녹시, 반웅성 부타디엔 아크릴로 니트릴 공중합 고무 및 (메타)아크릴레이트계 수지로 이루어진 군으로부터 선택된 하나 이상의 고분자 수지를 포함하는, 다이싱 다이본딩 필름. , The thermoplastic resins include polyimide, polyether imide, polyester imide, polyamide, polyether sulfone, polyether ketone, polyolefin, polyvinyl chloride, phenoxy, semi-male butadiene acrylonitrile copolymer rubber and (meth)acrylic. A dicing die-bonding film comprising at least one polymer resin selected from the group consisting of rate-based resins. ,
【청구항 12] [Claim 12]
게 9항에 있어서, In paragraph 9,
상기 경화제는 페놀계 수지, 아민계 경화제, 및 산무수물계 화제로 이루어진 군에서 선택된 1종 이상의 화합물을 포함하는, ' The curing agent includes one or more compounds selected from the group consisting of phenolic resins, amine-based curing agents, and acid anhydride-based agents, '
다이싱 다이본딩 필름. Dicing die bonding film.
【청구항 13] [Claim 13]
거 19항에 있어서, In paragraph 19,
상기 접착층은 상기 에폭시 수지 100중량부 대비 상기 열가소성 수지 10 내지 1 , 000중량부 및 상기 경화제 10 내지 700중량부를 포함하는, 다이싱 다이본딩 필름. The adhesive layer is a dicing die bonding film comprising 10 to 1,000 parts by weight of the thermoplastic resin and 10 to 700 parts by weight of the curing agent relative to 100 parts by weight of the epoxy resin.
【청구항 14】 【Claim 14】
거 19항에 있어서, In paragraph 19,
' 상기 접착층은 인계 화합물, 붕소계 화합물 및 인-붕소계 화합물 및 이미다졸계 화합물로 이루어진 군에서 선택된 1종 이상의 경화 촉매를 더 포함하는, 다이싱 다이본딩 필름. 'The adhesive layer further includes one or more curing catalysts selected from the group consisting of phosphorus-based compounds, boron-based compounds, phosphorus-boron-based compounds, and imidazole-based compounds.
【청구항 15】 【Claim 15】
게 9항에 있어서, In clause 9,
상기 접착층은 1 내지 300 의 두께를 갖는, 다이싱 다이본딩 필름. The adhesive layer has a thickness of 1 to 300, a dicing die bonding film.
【청구항 16】 【Claim 16】
게 9항의 다이싱 다이본딩 필름; 및 상기 다이싱 다이본딩 필름의 적어도' 일면에 적층된 웨이퍼;를 포함하는 반도체 웨이퍼를 완전 분단 또는 분단 가능하게 부분 처리하는 전처리 단계 ; The dicing die bonding film of clause 9; and a wafer laminated on at least one side of the dicing die bonding film; a pretreatment step of completely dividing or partially processing the semiconductor wafer to enable division;
상기 전처리한 반도체 웨이퍼의 기재 필름에 자외선을 조사하고, 상기 반도체 웨이퍼의 분단에 의해 분리된 개별 칩들을 픽업하는.단계를 포함하는, 반도체 웨이퍼의 다이싱 방법. A dicing method for a semiconductor wafer, comprising the step of irradiating ultraviolet rays to the base film of the pretreated semiconductor wafer and picking up individual chips separated by dividing the semiconductor wafer.
PCT/KR2014/012981 2014-01-03 2014-12-29 Dicing film and dicing die bonding film WO2015102342A1 (en)

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