WO2015030457A1 - Plasma apparatus for vapor phase etching and cleaning - Google Patents

Abstract

The present invention relates to a plasma apparatus for vapor phase etching and cleaning. The plasma apparatus for vapor phase etching and cleaning of the present invention comprises: a reactor body for treating a substrate to be treated; a direct plasma generation region which is located within the reactor body and in which a process gas flows and plasma is directly induced so as to dissociate the process gas; a plasma inducing assembly for inducing the plasma to the direct plasma generation region; a mixing region which is located within the reactor body and in which the process gas received from the direct plasma generation region is mixed with the vaporized gas received from the outside of the reactor body so as to form reactive species; a first gas distribution baffle which is provided between the direct plasma generation region and the mixing region and has a plurality of first through-holes; a substrate treating region which is located within the substrate treating region and in which the substrate to be treated, is treated by the reactive species received from the mixing region; and a second gas distribution baffle which is provided between the mixing region and the substrate treating region and has a plurality of second through-holes so as to enable the inflow of the reactive species from the mixing region to the substrate treating region. The plasma apparatus for vapor phase etching and cleaning of the present invention can treat the substrate to be treated, without damage due to electrification by forming the reactive species so as to treat the substrate to be treated. In addition, the plasma apparatus for vapor phase etching and cleaning of the present invention does not generate byproducts and has high selectivity when cleaning the substrate to be treated. Also, a surface of the substrate to be treated, can be uniformly treated by uniformly providing the vaporized gas for the vapor phase cleaning. The temperature of the vaporized gas can be adjusted by using a heating wire included in the gas distribution baffle for injecting the vaporized gas. In addition, the substrate to be treated, can be treated in a fine pattern processing step by removing damage due to the electrification. Furthermore, the plasma is uniformly generated by uniformly diffusing the process gas into a chamber through a diffuser plate. The substrate such as a small-sized substrate or a large-sized substrate can be uniformly treated by uniformly generating the large-area plasma. In addition, a diffusion degree of the process gas can be adjusted by adjusting an installation space of the diffuser plate. Also, a gas decomposition rate is increased according to an increase of the duration of the process gas so as to increase the etching amount. Additionally, a substrate fixing type can be selected according to the process atmosphere and environment by further including a hybrid chuck and selectively driving one between an electrostatic type or a vacuum type for supporting the substrate according to the process for treating the substrate. In addition, there is no need for the substrate treating process or exchanging of the chuck during a device failure by selecting the other type and fixing the substrate when one type is not used. Furthermore, productivity is increased and repair cost and production costs are reduced.

Description

[Revision 16.12.2014] under Rule 26. Plasma Apparatus for Gas Etching and Cleaning

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma apparatus for gas phase etching and cleaning. More particularly, the present invention relates to a gas phase etching and cleaning process in which a reactive reaction is performed directly with a thin film on the surface of a substrate using highly reactive atoms or molecules. The present invention relates to a plasma apparatus.

Semiconductors are active electronic devices with functions such as storage, amplification, and switching of electric signals. Based on high integration, high performance, and low power, semiconductors drive high value-added systems and service industries, and are the key components leading the digital information age.

The semiconductor manufacturing process can be broadly divided into the front process (wafer processing process) and the post process (assembly process and inspection process), and the share of the front process equipment market accounts for about 75%. Among them, wet etching apparatus and dry etching, called plasma etching, form the second largest market with 22.6% in total. In the semiconductor process, each component and a circuit electrically connecting them are made in a pattern (circuit design) and drawn on a thin film (thin film) of several layers in the semiconductor. Etching is the process of removing unnecessary parts on the panel to reveal the circuit pattern. The etching process includes a dry etching process using a plasma and a wet process using a cleaning solution.

The dry etching process is a process of performing physical and chemical etching by vertically incident particles by ion flux using plasma. As the device design becomes smaller, the problem of damage to the pattern is raised. The wet process is a technique that has been widely used for a long time, soaking a wafer in a container containing a cleaning solution for a predetermined time, or spraying the cleaning solution while rotating the wafer at a constant speed to remove unnecessary parts on the surface of the wafer. However, in the wet process, a large amount of wastewater is generated and it is difficult to control the cleaning amount and control the uniformity of the cleaning. In addition, the pattern after cleaning becomes larger or smaller than the design intention due to the isotropic etching, which makes it difficult to process the micronullon.

Recently, as the demand for devices with higher processing speeds and high capacity memories increases, the size of unit devices of semiconductor chips continues to decrease, so that the spacing between patterns formed on the wafer surface continues to narrow, and the gate insulating film of the device The thickness is getting thinner and thinner. As a result, problems that did not appear or matter in previous semiconductor processes are becoming increasingly important. Among them, a representative problem caused by plasma is plasma damage. Damage due to charging affects the characteristics and reliability of many devices, including transistors, in all processes where the surface of the wafer is exposed as the semiconductor devices are miniaturized. Thin film damage due to charging caused by plasma mainly occurs in the etching process. Damage caused by charging is a problem that occurs during the dry etching process or wet process, and efforts to solve this problem are required.

In addition, the size of the substrate to be processed has increased in size, and thus efforts to supply a uniform plasma are required.

A chuck, which is a substrate support for fixing a conventional target substrate, is driven by either a static chuck (ESC) using an electrostatic force or a vacuum chuck using a vacuum force. Briefly describing each method, the vacuum method is the most widely used method in order to proceed with the semiconductor manufacturing process by mounting the substrate on the upper surface of the vacuum chuck (vacuum chuck) by sucking the air to the substrate to be treated Fix it. In the vacuum method, when the semiconductor manufacturing process is performed in a vacuum environment, there is a problem in that a vacuum force for sucking air is weakened and thus it is difficult to fix the substrate. The electrostatic method uses an electrostatic force of an electrostatic chuck (ESC) to fix a substrate. The electrostatic chuck can also minimize the generation of particle contamination due to the contact of the substrate with the clamp and prevents deformation of the substrate. Unlike the vacuum chuck, the electrostatic chuck fixes the substrate by using electrostatic force regardless of the atmosphere in the chamber. There is an advantage to this.

The electrostatic chuck and the vacuum chuck described above are operated in either an electrostatic method or a vacuum method to fix the substrate to be processed. Therefore, there was a restriction to process according to the type of chuck installed in the process chamber. For example, in a process chamber in which a vacuum chuck is installed, it is difficult to process the vacuum atmosphere. In addition, because it operates in one way, if a problem occurs in the chuck, the process may be interrupted or the chuck must be replaced, resulting in lower production efficiency and increased repair costs.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma apparatus for vapor phase etching and cleaning, which is capable of cleaning by directly reacting with a thin film on a surface of a substrate to be treated so as not to be damaged by charging.

Still another object of the present invention is to provide a plasma apparatus for vapor phase etching and cleaning, which can uniformly form plasma by uniformly diffusing a process gas.

One aspect of the present invention for achieving the above technical problem relates to a plasma apparatus for gas phase etching and cleaning. The plasma apparatus for the gas phase etching and cleaning of the present invention comprises a reactor body for processing a substrate to be processed; A direct plasma generating region in the reactor body into which process gas is introduced and plasma is directly induced to dissociate the process gas; A plasma inducing assembly for inducing plasma to the direct plasma generating region; A mixing region in the reactor body in which the process gas introduced from the direct plasma generating region and the vaporized gas introduced from the outside of the reactor body are mixed to form reactive species; A first gas distribution baffle disposed between the direct plasma generating region and the mixing region and having a plurality of first through holes; A substrate processing region in the reactor body in which a substrate to be treated is processed by reactive species introduced from the mixing region; And a second gas distribution baffle provided between the mixing region and the substrate processing region, the second gas distribution baffle having a plurality of second through holes penetrated by the reaction species from the mixing region to the substrate processing region.

The plasma apparatus may include: a fixed bar installed at a gas inlet through which process gas is introduced; And a diffuser plate installed at the fixed bar and provided to face the gas injection hole into which the process gas is introduced, and having a plate-shaped distribution plate for diffusing the process gas into the direct plasma generation region.

The distribution plate also includes a plurality of through holes.

The second gas distribution baffle includes a plurality of vaporization gas injection holes for injecting vaporization gas into the mixing region.

The first and second gas distribution baffles also include hot wires in either or both.

And the plasma induction assembly comprises a cooling channel.

In addition, the vaporization gas is vaporized H ₂ O.

The plasma apparatus includes a body portion having a dielectric layer on an upper surface on which the substrate is to be processed; At least one electrode provided in the body to be driven by a voltage applied thereto; And a substrate support including at least one hybrid line formed in the body portion to contact the substrate to be seated, and driving the electrode to fix the substrate to the body portion or through the hybrid line. Air is sucked in to fix the substrate to be processed.

In addition, the substrate support is formed of polyimide.

And a refrigerant circulation path formed by connecting the plurality of hybrid lines to the dielectric layer, and when the substrate is fixed by driving the electrode unit, the refrigerant for cooling the substrate through the hybrid line and the refrigerant circulation path. Circulate

The plasma apparatus for the gas phase etching and cleaning of the present invention comprises a reactor body for processing a substrate to be processed; A direct plasma generating region in the reactor body into which process gas is introduced and plasma is directly induced to dissociate the process gas; A plasma inducing assembly for inducing plasma to the direct plasma generating region; A substrate processing region in the reactor body in which the process gas introduced from the direct plasma generating region and the vaporized gas introduced from the outside of the reactor body are mixed to form a reactive species, and the substrate to be processed is treated by the reactive species; And a gas distribution baffle provided between the direct plasma generating region and the substrate processing region and having a plurality of through holes penetrated for uniform plasma distribution.

The plasma apparatus may include: a fixed bar installed at a gas inlet through which process gas is introduced; And a diffuser plate installed at the fixed bar and provided to face the gas injection hole into which the process gas is introduced, and having a plate-shaped distribution plate for diffusing the process gas into the direct plasma generation region.

The distribution plate also includes a plurality of through holes.

The gas distribution baffle may include a plurality of vaporization gas injection holes for injecting vaporized gas introduced from the outside into the substrate processing region.

The gas distribution baffle also includes a hot wire.

And the plasma induction assembly comprises a cooling channel.

In addition, the vaporization gas is vaporized H ₂ O.

The plasma apparatus includes a body portion having a dielectric layer on an upper surface on which the substrate is to be processed; At least one electrode provided in the body to be driven by a voltage applied thereto; And a substrate support including at least one hybrid line formed in the body portion to contact the substrate to be seated, and driving the electrode to fix the substrate to the body portion or through the hybrid line. Air is sucked in to fix the substrate to be processed.

In addition, the substrate support is formed of polyimide.

And a refrigerant circulation path formed by connecting the plurality of hybrid lines to the dielectric layer, and when the substrate is fixed by driving the electrode unit, the refrigerant for cooling the substrate through the hybrid line and the refrigerant circulation path. Circulate

According to the plasma apparatus for vapor phase etching and cleaning of the present invention, by treating reactive substrates by forming reactive species, the substrates to be treated can be processed without damage by charging. In addition, by-products are not generated when the substrate is cleaned, and the selectivity is high. In addition, the surface of the substrate to be processed can be uniformly treated by providing a vaporized gas for vapor phase cleaning uniformly. The temperature of the vaporized gas may be adjusted by using a heating wire provided in the gas distribution baffle for injecting the vaporized gas. In addition, since there is no damage due to charging, the substrate to be processed can be processed even in a fine pattern processing step. In addition, since the process gas is uniformly diffused into the chamber through the diffuser plate, the plasma is uniformly generated. The large-area plasma can be generated uniformly so that the substrate can be uniformly processed even when processing a large substrate as well as a small substrate. In addition, the degree of diffusion of the process gas can be controlled by adjusting the installation interval of the diffuser plate. In addition, the lifetime of the process gas is increased to increase the gas decomposition rate, thereby increasing the etching amount. In addition, since the hybrid chuck is further provided to select and drive one of the electrostatic method and the vacuum method to support the substrate according to the process of processing the substrate, the substrate fixing method can be selected according to the process atmosphere and environment. In addition, if one method is not available, the other method can be used to fix the board, eliminating the need to interrupt the substrate processing process or replace the chuck in case of failure. In addition, productivity is increased and repair costs and production costs are reduced.

1 is a diagram illustrating a plasma processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a view schematically illustrating the structure of the capacitively coupled electrode assembly of FIG. 1.

3 is a plan view of the bottom of the second gas distribution baffle.

4 is a plan view of the top of the second gas distribution baffle.

5 is a flowchart showing a plasma processing method using the plasma processing apparatus according to the first embodiment.

6 is a diagram illustrating a plasma processing apparatus according to a second embodiment of the present invention.

7 is a flowchart illustrating a plasma processing method using the plasma processing apparatus according to the second embodiment.

8 is a diagram illustrating a plasma processing apparatus according to a third embodiment of the present invention.

9 is a plan view of the diffuser plate.

10 is a flowchart illustrating a plasma processing method using the plasma processing apparatus according to the third embodiment.

11 is a graph showing the plasma uniformity according to the interval of the diffuser plate.

12 is a diagram showing a plasma processing apparatus according to a fourth embodiment of the present invention.

13 is a flowchart showing a plasma processing method using the plasma processing apparatus according to the fourth embodiment.

14 is a view showing a plane of a hybrid chuck according to a preferred embodiment of the present invention.

15 is a cross-sectional view of the hybrid chuck of FIG. 14.

16 is a flowchart illustrating a method of operating a hybrid chuck.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same configuration in each drawing is shown with the same reference numerals. Detailed descriptions of well-known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention are omitted.

1 is a diagram illustrating a plasma processing apparatus according to a first embodiment of the present invention.

Referring to FIG. 1, the plasma processing apparatus 10 according to the present invention includes a reactor body 12, a capacitively coupled electrode assembly 20, a first gas distribution baffle 40, a second gas distribution baffle 50, and a power source. It consists of a source 3. The reactor body 12 is provided with a substrate support 2 on which a substrate 1 to be processed is placed. The upper part of the reactor body 12 is provided with a gas inlet 14 for supplying a process gas for plasma treatment, the process gas supplied from the process gas source 15 through the gas inlet 14 the reactor body 12 It is supplied internally. The gas injection hole 14 is provided with a gas injection head 30 having a plurality of gas injection holes 32, and supplies a process gas directly to the plasma generation region 200 through the gas injection holes 32. The gas injection head 30 is connected to the gas inlet 14 to inject a process gas into the lower portion of the dielectric window 28. The lower portion of the reactor body 12 is provided with a gas outlet 16 is connected to the exhaust pump (17). An exhaust region 75 is formed below the reactor body 12 to surround the substrate support 2 and the exhaust hole 72 is formed. The exhaust hole 72 may be formed in a continuous opening, or may be formed of a plurality of through holes. In addition, the exhaust area 75 is provided with one or more exhaust baffles 74 for uniformly discharging the exhaust gas.

Reactor body 12 may be made of a metal material such as aluminum, stainless steel, copper. Or it may be made of coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. Alternatively, it is also possible to fabricate the reactor body 12 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the reactor body 12 may be made of any material suitable for carrying out the intended plasma process. The structure of the reactor body 12 may have a structure suitable for the uniform generation of the plasma, for example, according to the substrate 1 and for example, a circular structure or a square structure and any other structure.

The substrate 1 to be processed is, for example, substrates such as wafer substrates, glass substrates, plastic substrates and the like for the manufacture of various devices such as semiconductor devices, display devices, solar cells and the like. The substrate support 1 may be connected to a bias power supply 6. In addition, two bias power sources for supplying different radio frequency power may be electrically connected to the substrate support 2 through the impedance matcher 7 to be biased. Alternatively, the substrate support 2 may be modified to have a zero potential without supplying bias power. The substrate support 2 is provided with a lift pin 60 connected to the lift pin driver 62 to lift or lower the substrate 1 while supporting the substrate 1. The substrate support 2 may comprise a heater.

The capacitively coupled electrode assembly 20 is provided on top of the reactor body 12 to form a ceiling of the reactor body 12. The capacitively coupled electrode assembly 20 includes a first electrode 22 connected to the ground 21 and a second electrode 24 connected to the power supply 3 to receive frequency power. The first electrode 22 forms the ceiling of the reactor body 12 and is connected to ground 21. The first electrode 22 is formed in one plate shape and has a plurality of protrusions 22a protruding into the reactor body 12 at regular intervals. The gas injection hole 14 is provided at the center of the first electrode 22. The second electrode 24 is provided between the protrusions 22a to be spaced apart from the first electrode 22 at a predetermined interval. A part of the second electrode 24 is inserted into the first electrode 22 to be mounted. Here, the second electrode 24 is connected to the power supply source 3 and the second electrode 24 is provided with a power electrode 24a and a power electrode 24a for receiving radio frequency power and are provided at the first electrode 22. It consists of the insulation part 24b inserted and installed. The insulating part 24b may be formed to surround the entire power electrode 24a. The first electrode 22 and the second electrode 24 generate a plasma directly capacitively coupled to the plasma generation region. In the present invention, the capacitively coupled electrode assembly 20 is used as a configuration for inducing plasma, but a radio frequency antenna may be used as a configuration for generating inductively coupled plasma. The power supply 3 is connected to the second electrode 24 via an impedance matcher 5 to supply radio frequency power. The DC electrode 4 can be selectively connected to the second electrode 24.

FIG. 2 is a view schematically illustrating the structure of the capacitively coupled electrode assembly of FIG. 1.

Referring to FIG. 2, the capacitively coupled electrode assembly 20 includes a first electrode 22 connected to the ground 21 and a second electrode 24 connected to the power supply source 3 in a spiral structure. The protrusion 22a of the first electrode 22 and the power supply electrode 24a of the second electrode 24 are spaced at a predetermined interval to form a spiral structure. The power supply electrode 24a of the second electrode 24 and the protrusion 22a of the first electrode 22 face each other at regular intervals to generate a uniform plasma. Here, the first and second electrodes 22 and 24 may also be provided as parallel electrodes and arranged in various structures. Although the first and second electrodes 22 and 24 in the present invention are illustrated in a square shape, the first and second electrodes 22 and 24 may be modified in various shapes such as a triangle and a circle.

A dielectric window 28 is provided between the capacitively coupled electrode assembly 20 and the first gas distribution baffle 40. The dielectric window 28 is resistant to plasma damage and can be used semi-permanently.

Referring back to FIG. 1, the second gas distribution baffle 50 is provided on the substrate support 2 in a configuration for injecting vaporized gas into the mixing region 220. The second gas distribution baffle 50 includes a plurality of second through holes 52 formed therethrough and a plurality of vaporization gas injection holes 51 formed in the vaporization gas supply path 53 provided in the second gas distribution baffle 50. It is composed of The vaporization gas injection hole 51 is formed to be injected into the mixing region 220 positioned above the second gas distribution baffle 50. The second gas distribution baffle 50 has a vaporization gas supply path 53 for moving the vaporized gas therein, and a plurality of vaporization gas injection holes 51 are formed in the vaporization gas supply path 53. The vaporized gas may be supplied directly from the vaporized gas supply source 56 to the mixing region 220 through one or more gas injection nozzles, or through the vaporized gas injection hole 51 of the vaporized gas supply path 53. ) May be supplied.

The reactor body 12 may further include a first gas distribution baffle 40 for uniformly distributing the plasma in the direct plasma generating region 200. The first gas distribution baffle 40 is provided between the direct plasma generation region 220 and the mixing region 220, and uniformly disposes the process gas dissociated by the plasma through the plurality of first through holes 42 formed therethrough. To distribute. The plasma generated in the direct plasma generation region 200 is dissociated from the process gas introduced into the chamber and is uniformly distributed to the mixing region 220 through the first gas distribution baffle 40. At this time, the vaporization gas is supplied to the mixing region 220 through the vaporization gas injection hole 51 of the second gas distribution baffle 50, and the dissociated process gas and the vaporization gas are mixed to form reactive species. do. The reaction species formed are uniformly distributed to the substrate processing region 230 in which the substrate 1 to be processed is located through the second through hole 52 of the second gas distribution baffle 50. The reactive species distributed through the second through hole 42 are adsorbed with by-products of the substrate 1 to be removed in the heat treatment process. This type of cleaning is referred to as vapor phase etching.

The gas phase cleaning is a cleaning method that has the advantages of wet cleaning and dry etching, and directly reacts with a thin film on the surface of the substrate 1 by using highly reactive atoms or molecules in a low temperature vacuum chamber, thereby selectively etching and cleaning. Causes The gas phase cleaning has a high selection ratio, has an advantage of easy control of the cleaning amount, and no plasma damage. In addition, it does not generally make by-products, even if it is wet wet information has the advantage that can be removed sufficiently by a simple method. After the reactive species are formed in the mixing region 220, the reactive species are distributed to the substrate processing region 230 in which the substrate 1 is disposed, and thus, the reaction between the plasma and the vaporized gas may be more efficiently performed. The reaction species may be uniformly distributed through the second through hole 52 of the second gas distribution baffle 50 to uniformly treat the entire substrate 1.

Vaporized water (H ₂ O) is used as a vaporization gas to form reactive species. As the main etchant gas (Main etchant gas) for generating the plasma, NF3, CF4 (Fluorine-based), Heri, Ar, N2 (inert gas) and the like are used as the carrier gas. Each process pressure is preferably several m torr to several hundred torr.

The first and second gas distribution baffles 40 and 50 may further include a heating wire as a heating means for adjusting the temperature. Here, the heating means may be formed in both the first and second gas distribution baffles 40 and 50, or may be formed in only one of them. In particular, the hot wire formed in the second gas distribution baffle 50 is vaporized by continuously applying heat to the vaporized water (H ₂ O) passing through the vaporization gas supply path 53 by receiving power from the power supply source 57. The water (H ₂ O) is not liquefied and remains in a vaporized state so as to reach the substrate 1 to be processed. In addition, the second gas distribution baffle 50 may further include a sensor for measuring the temperature of the vaporized gas.

The plasma processing apparatus 10 may include a cooling channel 26 in the first electrode 22 connected to the ground 21. The cooling channel 26 receives the cooling water from the cooling water source 27 to lower the temperature of the overheated first electrode 22 to maintain a constant temperature.

3 is a plan view showing the lower portion of the second gas distribution baffle, and FIG. 4 is a plan view showing the upper portion of the second gas distribution baffle.

3 and 4, the second through hole 52 of the second gas distribution baffle 50 is formed through the second gas distribution baffle 50. On the other hand, the vaporization gas injection hole 51 is formed in the upper portion of the vaporization gas supply passage 53 formed in the second gas distribution baffle 50, that is, the upper portion of the second gas distribution baffle 50. Therefore, the second through hole 52 and the vaporization gas injection hole 54 can be confirmed in the upper portion of the second gas distribution baffle 50, and the second through hole 52 in the lower portion of the second gas distribution baffle 50. Only can be confirmed. The second through hole 52 and the vaporization gas injection hole 51 may have the same size or different sizes. In addition, the vaporization gas injection hole 51 and the second through hole 52 are uniformly formed in the entire second gas distribution baffle 50 to enable uniform plasma distribution and injection of the vaporization gas.

5 is a flowchart showing a plasma processing method using the plasma processing apparatus according to the first embodiment.

Referring to FIG. 5, the process gas supplied from the process gas supply source 15 is directly supplied to the plasma generation region 200 through the gas injection head 30 of the plasma processing apparatus 10 (S10). The plasma generated in the direct plasma generation region 200 is distributed to the mixing region 220 through the first gas distribution baffle 40 (S11). The vaporized gas is supplied directly or through the vaporized gas injection hole 51 of the second gas distribution baffle 50 to the mixing region 220 to form reactive species (S12). The formed reactive species are distributed from the mixing region 220 to the substrate processing region 230 on which the substrate 1 to be mounted is seated through the second through hole 52 of the second gas distribution baffle 50 (S13). The substrate 1 to be processed is treated with the reactive species distributed in the mixing region 220 (S14).

6 is a diagram illustrating a plasma processing apparatus according to a second embodiment of the present invention.

Referring to FIG. 6, the plasma processing apparatus 10 includes a first gas distribution baffle 50 having a vaporization gas injection hole 54 formed therein, and thus, another configuration and function may be different from those of the plasma processing apparatus of the first embodiment. same. The vaporized gas is injected into the substrate processing region 230 where the substrate 1 to be processed is positioned through the vaporization gas injection hole 54. Therefore, the reactive species for substrate processing are formed in the substrate processing region 230, and the processed substrate 1 is processed using the formed reactive species. The substrate processing region 230 includes a mixing region for forming reactive species. Here, the plasma generated in the direct plasma generating region 200 is uniformly distributed in the direct plasma generating region 210 through the second gas distribution baffle 40.

7 is a flowchart illustrating a plasma processing method using the plasma processing apparatus according to the second embodiment.

Referring to FIG. 7, the process gas supplied from the process gas supply source 15 is directly supplied to the plasma generation region 200 through the gas injection head 30 of the plasma processing apparatus 10 (S20). The plasma generated in the direct plasma generation region 200 is distributed to the substrate processing region 230 through the first and second gas distribution baffles 40 and 50 (S21). The vaporized gas is supplied directly or through the vaporization gas injection hole 51 of the second gas distribution baffle 50 to the substrate processing region 230 to form reactive species (S22). The substrate 1 to be processed is treated with the reactive species formed in the substrate processing region 230 (S23).

8 is a diagram illustrating a plasma processing apparatus according to a third embodiment of the present invention.

Referring to FIG. 8, the plasma processing apparatus 10 includes a diffuser plate 80 for uniformly diffusing a process gas. The diffuser plate 80 is formed of ceramics and uniformly diffuses the process gas flowing into the reactor body 12 directly in the plasma generation region 200. The diffuser plate 80 is spaced apart from the gas injection head 30 in a plate shape. The process gas introduced through the gas injection head 30 is directly concentrated in the center of the plasma generating region 200, and is diffused into the edge region by the diffuser plate 80. Then, the total remaining time of the process gas in the direct plasma generation region 200 is increased to increase the decomposition rate. The process gas which is injected through the gas injection head 30 and is not decomposed is concentrated in the center of the plasma generating region 200, and is diffused through the diffuser plate 80 and decomposed by the plasma. One generation can be achieved. In addition, the etching amount of silicon dioxide (sio ₂ ), which is an etching target, increases. The plasma processing apparatus according to the third embodiment has the same configuration and function as the plasma processing apparatus according to the first embodiment except for the diffuser plate 80, and thus a detailed description thereof will be omitted. .

9 is a plan view of the diffuser plate.

Referring to FIG. 9, the diffuser plate 80 is formed of a fixing bar 82 connected to the gas injection head 30 and a plate-shaped distribution plate 84 connected to the fixing bar 82. Process gas supplied from the gas injection head 30 installed at the center of the reactor body 12 hits the distribution plate 84 and diffuses around. Therefore, the plasma that has been concentrated in the center of the direct plasma generating region 200 may be uniformly formed in the entire direct plasma generating region 200.

The distribution plate 84 may be formed of one plate without a through hole, or a plurality of through holes 86 may be formed. As the process gas is diffused by the distribution plate 84, it may be distributed downward through the plurality of through holes 86. The stopper 87 and the stopper fixing member 88 may be inserted into the through hole 86 to block the plurality of through holes 86 to adjust the total number of the through holes 86. The distribution plate 84 is preferably formed of a diameter of the distribution plate 84 of 64 Φ ± 10 Φ, but is formed by adjusting the shape and size according to the shape of the gas injection head (30).

10 is a flowchart illustrating a plasma processing method using the plasma processing apparatus according to the third embodiment.

Referring to FIG. 10, the process gas supplied from the process gas supply source 15 is directly supplied to the plasma generation region 200 through the gas injection head 30 of the plasma processing apparatus 10 (S100). The supplied process gas is uniformly diffused in the plasma generation region 200 by the diffuser plate 80 (S110). The plasma generated in the direct plasma generation region 200 is distributed to the mixing region 220 through the first gas distribution baffle 40 (S120). The vaporized gas is supplied to the mixing region 220 directly or through the vaporized gas injection hole 51 of the second gas distribution baffle 50 to form reactive species (S130). The formed reaction species are distributed from the mixing region 220 to the substrate processing region 230 on which the processing target substrate 1 is seated through the second through hole 52 of the second gas distribution baffle 50 (S140). The substrate 1 to be processed is treated with the reactive species distributed in the mixing region 220 (S150).

11 is a graph showing the plasma uniformity according to the interval of the diffuser plate.

Referring to FIG. 11, plasma uniformity may be adjusted according to a gap between the diffuser plate 80 and the gas injection head 30. First, when checking the etching amount and uniformity under the condition that the diffuser plate 80 is not provided (Normal), it appears as 427 Å / min 7.5%. As shown in the figure, it can be seen that the center area of the substrate 1 to be processed has a larger amount of etching than the edge area. This means that plasma generation is concentrated in the center area.

On the other hand, when checking the etching amount and uniformity after installing the diffuser plate 80 according to the present invention in the plasma apparatus 10, the etching amount and uniformity when the installation gap of the diffuser plate 80 is 5mm 503 Å / min 3.8%, 516 Å / min 3.4% at 10mm, 508 Å / min 3.3% at 15mm. Therefore, the plasma uniformity may be improved through the diffuser plate 80. In addition, since the difference in the diffusion speed and distance of the process gas occurs according to the change in the gap of the diffuser plate 80, the plasma uniformity may be improved by adjusting the etching amount through the change of the gap.

12 is a diagram showing a plasma processing apparatus according to a fourth embodiment of the present invention.

Referring to FIG. 12, the plasma processing apparatus 10 includes a first gas distribution baffle 50 having a vaporization gas injection hole 54 formed therein. The vaporized gas is injected into the substrate processing region 230 where the substrate 1 to be processed is positioned through the vaporization gas injection hole 54. Therefore, the reactive species for substrate processing are formed in the substrate processing region 230, and the processed substrate 1 is processed using the formed reactive species. The substrate processing region 230 includes a mixing region for forming reactive species. Here, the plasma generated in the direct plasma generating region 200 is uniformly distributed in the direct plasma generating region 210 through the second gas distribution baffle 40. The plasma processing apparatus according to the fourth embodiment has the same configuration and function as the plasma processing apparatus according to the second embodiment except for the diffuser plate 80, and thus, detailed description thereof will be omitted.

13 is a flowchart showing a plasma processing method using the plasma processing apparatus according to the fourth embodiment.

Referring to FIG. 13, the process gas supplied from the process gas supply source 15 is directly supplied to the plasma generation region 200 through the gas injection head 30 of the plasma processing apparatus 10 (S200). The supplied process gas is uniformly diffused in the plasma generation region 200 by the diffuser plate 80 (S210). The plasma generated in the direct plasma generation region 200 is distributed to the substrate processing region 230 through the first and second gas distribution baffles 40 and 50 (S220). The vaporized gas is supplied directly or through the vaporization gas injection hole 51 of the second gas distribution baffle 50 to the substrate processing region 230 to form reactive species (S230). The substrate 1 to be processed is treated with the reactive species formed in the substrate processing region 230 (S240).

The substrate support 2 provided in the plasma processing apparatus 10 is operated by either an electrostatic method or a vacuum method to fix the substrate 1. The substrate support 2 in the present invention may be composed of a hybrid chuck that can be driven by selecting one of the electrostatic method and the vacuum method. This hybrid chuck is applied to all of the plasma processing apparatus 10 according to the first, second, third and fourth embodiments.

Hereinafter, the configuration and operation method of the hybrid chuck will be described.

14 is a view showing a plane of the hybrid chuck according to a preferred embodiment of the present invention, Figure 15 is a view showing a cross section of the hybrid chuck of FIG.

14 and 15, the hybrid chuck according to the present invention is referred to as a substrate support 100 for supporting the substrate 1 to be processed. The substrate support 100 is composed of a body portion 102, first and second electrode portions 112 and 114, and a hybrid line 106.

The body portion 102 is a base portion on which the substrate 1 is mounted, and is provided in the plasma chamber. The body portion 102 may be modified in various forms such as a circle or a rectangle according to the shape of the substrate 1 to be processed. The body portion 102 is provided with a lift pin 104 for raising or lowering the substrate 1 while supporting the substrate 1. The substrate 1 to be processed is, for example, a silicon wafer substrate for producing a semiconductor device or a glass substrate for producing a liquid crystal display or a plasma display.

The first and second electrode portions 112 and 114 are formed on the upper surface on which the substrate 1 to be processed is seated in the body portion 102. The dielectric layer 108 is formed on the upper surfaces of the first and second electrode portions 112 and 114 to allow the substrate 1 to be mounted on the dielectric layer 108. The dielectric layer 108 may be formed in a single plate shape or may be formed in the same shape as the first and second electrode portions 112 and 114. The first and second electrode portions 112 and 114 are formed in a zigzag shape and are installed to be fitted together. The shape of the electrode portion may increase the contact surface between the electrode portion and the substrate 1 to maximize the generation of electrostatic force. Electrode portion shape in the present invention is illustrative and can be modified into various shapes. The first and second electrode parts 112 and 114 are connected to the electrostatic chuck power supply 120 to receive a voltage for generating electrostatic force when driving the substrate support 100 in an electrostatic manner.

An insulating part 113 for electrical insulation is provided between the first and second electrode parts 112 and 114. Hybrid chuck according to the present invention may be provided with one electrode in the body portion 102 in a unipolar (Unipolar, or monopolar) manner to generate an electrostatic force, preferably when fixing a substrate It is possible to generate an electrostatic force by having two or more electrodes in a bipolar manner that does not require an electric field. In the present invention, the first and second electrode portions 112 and 114 of the bipolar type are disclosed and described.

One or more hybrid lines 106 are formed through the body portion 102. At least one hybrid line 106 is connected to the vacuum pump 130, and when driving the substrate support 100 in a vacuum manner by sucking the air through the hybrid line 106, which is seated on the upper surface of the body portion (102) The substrate 1 to be processed is fixed.

The hybrid line 106 may be connected to the coolant source 150 and used as a cooling channel for cooling the substrate 1. In other words, when the substrate support 100 is driven in a vacuum manner, the hybrid line 106 sucks air to fix the substrate 1 and the refrigerant when the substrate support 100 is driven in an electrostatic manner. Is supplied to cool the substrate 1 to be processed.

Two or more hybrid lines 106 are connected to each other to form a refrigerant circulation path 107. The refrigerant circulation path 107 is formed concentrically on the dielectric layer 108, which is the upper surface of the body portion 102. The refrigerant circulation path 107 is uniformly distributed over the entire upper surface of the body portion 102. In the refrigerant circulation path 107, one hybrid line 106 is used as the refrigerant supply path, and the other hybrid line 106 is used as the refrigerant discharge path. Refrigerant is supplied from the refrigerant source 150 through one hybrid line 106, circulated along the refrigerant circulation path 107, and after adjusting the temperature of the substrate W to be processed, the other hybrid line 106 is again supplied. Is discharged through). At this time, each hybrid line 106 is connected to a flow control valve 154 for controlling the flow rate of the refrigerant. Helium (He) gas may be supplied to the refrigerant in the substrate support 100 of the vacuum method.

When driving the substrate support 100 in a vacuum manner, the first and second electrode portions 112 and 114 are driven to fix the substrate 1 by an electrical force. The vacuum method is not limited by the atmosphere in the chamber in which the substrate support 100 is installed, and the helium gas is circulated to the rear surface of the substrate 1 through the refrigerant circulation path 107 and the hybrid line 106, and thus the temperature of the substrate. Adjust the temperature to improve the temperature uniformity.

Hybrid line 106 is connected to vacuum pump 130 or refrigerant source 150 via switching valve 140. The switching valve 140 connects the hybrid line 106 and the vacuum pump 130 when receiving a signal for driving in a vacuum manner from the controller 110. In addition, the switching valve 140 connects the hybrid line 106 and the refrigerant supply source 150 when a signal for driving in an electrostatic manner is received from the controller 110. In this case, the controller 110 transmits a driving signal to the electrostatic chuck power supply 120.

 In order to check a state in which the substrate 1 to be fixed is fixed to the substrate support 100, a pressure measuring sensor unit 132 is provided between the hybrid line 106 and the vacuum pump 130. The pressure measuring sensor unit 132 measures the vacuum pressure change amount of the hybrid line 106 to check a state in which the substrate is fixed. In addition, the flow rate sensor unit 152 is provided between the hybrid line 106 and the coolant supply source 150 to check the state in which the substrate 1 is fixed to the substrate support 100. The flow rate sensor 152 measures the amount of change in the refrigerant flow rate of the hybrid line 106 and the refrigerant circulation path 107 to confirm a state in which the substrate is fixed.

Conventional substrate support 100 is mainly formed of a ceramic (Ceramic) material, the substrate support 100 in the present invention is formed of polyimide (Polyimide). Ceramics have the advantages of high durability, high thermal conductivity and adsorptivity. Disadvantages include high cost and difficulty in the manufacturing process, as well as water absorption due to the porous nature. Polyimide, on the other hand, has low cost and high heat resistance, and thus has little change in properties from low temperature to high temperature. In addition, there is an advantage having a high dielectric breakdown voltage, a short discharge time. In addition, there is no influence by moisture, and thus has a wider application range than ceramics.

16 is a flowchart illustrating a method of operating a hybrid chuck.

Referring to FIG. 16, when the processing target substrate 1 flows into the chamber for processing, the user or the controller 110 selects whether to drive the substrate support 100 in an electrostatic or vacuum manner (S300). . The method may be manually selected by the user, or may be systematically selected by the controller 110 according to the atmosphere in the chamber or the state of the substrate support 100.

When the operation is selected by the electrostatic method, the electrostatic chuck voltage is applied to the first and second electrode portions 112 and 114 from the electrostatic chuck power supply 120 (S310). The coolant supplied from the coolant source 150 circulates along the hybrid line 106 and the coolant circulation path 107 (S311). Although not shown in the drawing, the pressure of the circulated refrigerant is measured using a pressure measuring device (S312), and the flow rate of the refrigerant is measured and transmitted to the controller through the flow rate measuring sensor 152 (S313). The controller 110 checks the fixed state of the substrate 1 through the measured flow rate change amount of the refrigerant. For example, the controller 110 may check the fixed state by comparing the data about the flow rate change in the state in which the substrate 1 is normally fixed and the abnormally fixed state with the measured flow rate change (S314). If it is determined that the amount of refrigerant flow rate change is normal, the process is performed on the substrate 1 (S316). However, when it is determined that the substrate 1 is not normally fixed through the amount of refrigerant flow rate change, the substrate 1 is processed. It is possible to repeat the above process by seating on the substrate support 100 again. Alternatively, it may be determined that the driving is not smooth by the electrostatic method, so that the substrate 1 may be fixed to the substrate support 100 by switching to the vacuum method (S315). The switching of the operation method may be performed manually by the user, or may be automatically performed by the control unit 110.

If it is selected to operate in a vacuum manner, the vacuum pump 130 is driven to suck air through the hybrid line 106 (S320). The vacuum pressure of the hybrid line 106 is measured and transmitted to the controller through the pressure measuring sensor 132 (S321). The controller 110 checks the fixed state of the substrate 1 through the measured vacuum pressure change. For example, the controller 110 may check the fixed state by comparing data about the pressure change in the state in which the substrate 1 is normally fixed and the abnormally fixed state with the measured pressure change amount (S322). If it is determined that the change in vacuum pressure is normal, the process is performed on the substrate 1 (S324). However, if it is determined that the processed substrate 1 is not normally fixed through the change in vacuum pressure, the substrate 1 It is possible to repeat the above process by seating on the substrate support 100 again. Alternatively, the substrate 1 may be fixed by switching to the electrostatic method because it is determined that the driving is not smooth in the vacuum method (S323). The switching of the operation method may be performed manually by the user, or may be automatically performed by the control unit 110.

Therefore, by using the hybrid chuck of the present invention, it is possible to select a substrate fixing method according to the process atmosphere and environment. In addition, if one method is not used, the other method can be selected to fix the board, thereby increasing productivity and reducing repair and production costs without having to interrupt the substrate processing process or replace the chuck in case of failure.

The embodiment of the plasma apparatus for vapor phase etching and cleaning of the present invention described above is merely exemplary, and various modifications and equivalent other embodiments are possible to those skilled in the art to which the present invention pertains. You can see that.

Therefore, it will be understood that the present invention is not limited only to the form mentioned in the above detailed description. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

Claims (20)

A reactor body for processing a substrate to be processed; A direct plasma generating region in the reactor body into which process gas is introduced and plasma is directly induced to dissociate the process gas; A plasma inducing assembly for inducing plasma to the direct plasma generating region; A mixing region in the reactor body in which the process gas introduced from the direct plasma generating region and the vaporized gas introduced from the outside of the reactor body are mixed to form reactive species; A first gas distribution baffle disposed between the direct plasma generating region and the mixing region and having a plurality of first through holes; A substrate processing region in the reactor body in which a substrate to be treated is processed by reactive species introduced from the mixing region; And And a second gas distribution baffle provided between the mixing region and the substrate processing region, the second gas distribution baffle having a plurality of second through holes penetrated by the reaction species from the mixing region to the substrate processing region. Plasma apparatus for vapor etching and cleaning. The method of claim 1, The plasma device is A fixed bar installed at a gas inlet through which process gas is introduced; And It is installed on the fixed bar, the gas phase etching characterized in that it comprises a diffuser plate having a plate-shaped distribution plate is provided so as to face the gas inlet through which the process gas is introduced to diffuse the process gas in the direct plasma generating region and Plasma apparatus for cleaning. The method of claim 2, The distribution plate includes a plurality of through holes, the plasma apparatus for the gas phase etching and cleaning. The method of claim 1, The second gas distribution baffle includes a plurality of vaporization gas injection holes for injecting vaporized gas into the mixing region. The method of claim 1, And the first and second gas distribution baffles comprise hot wires in one or both of them. The method of claim 1, And the plasma induction assembly comprises a cooling channel. The method of claim 1, The vaporization gas is vaporized H ₂ O characterized in that the plasma apparatus for gas phase etching and cleaning. The method according to claim 1 or 2, The plasma device is A body part having a dielectric layer on an upper surface on which the substrate is to be processed; At least one electrode part provided in the body part and driven by applying a voltage; and A substrate support including one or more hybrid lines formed in the body portion to contact the substrate to be seated, And driving the electrode part to fix the substrate to the body part or to suck air through the hybrid line to fix the substrate to the body part. The method of claim 8, The substrate support is a plasma apparatus for vapor phase etching and cleaning, characterized in that formed of polyimide. The method of claim 8, A refrigerant circulation path formed by connecting the plurality of hybrid lines to the dielectric layer, And driving the electrode unit to circulate the refrigerant for cooling the substrate through the hybrid line and the refrigerant circulation path when the substrate is fixed. A reactor body for processing a substrate to be processed; A direct plasma generating region in the reactor body into which process gas is introduced and plasma is directly induced to dissociate the process gas; A plasma inducing assembly for inducing plasma to the direct plasma generating region; A substrate processing region in the reactor body in which the process gas introduced from the direct plasma generating region and the vaporized gas introduced from the outside of the reactor body are mixed to form a reactive species, and the substrate to be processed is treated by the reactive species; And And a gas distribution baffle provided between the direct plasma generating region and the substrate processing region and having a plurality of through holes penetrated for uniform plasma distribution. The method of claim 11, The plasma device is A fixed bar installed at a gas inlet through which process gas is introduced; And It is installed on the fixed bar, the gas phase etching characterized in that it comprises a diffuser plate having a plate-shaped distribution plate is provided so as to face the gas inlet through which the process gas is introduced to diffuse the process gas in the direct plasma generating region and Plasma apparatus for cleaning. The method of claim 12, The distribution plate includes a plurality of through holes, the plasma apparatus for the gas phase etching and cleaning. The method of claim 11, The gas distribution baffle includes a plurality of vaporization gas injection holes for injecting vaporized gas introduced from the outside into the substrate processing region. The method of claim 11, The gas distribution baffle comprises a hot wire plasma apparatus for the gas phase etching and cleaning. The method of claim 11, And the plasma induction assembly comprises a cooling channel. The method of claim 11, The vaporization gas is vaporized H ₂ O characterized in that the plasma apparatus for gas phase etching and cleaning. The method according to any one of claims 11 to 12, The plasma device is A body part having a dielectric layer on an upper surface on which the substrate is to be processed; At least one electrode part provided in the body part and driven by applying a voltage; and A substrate support including one or more hybrid lines formed in the body portion to contact the substrate to be seated, And driving the electrode part to fix the substrate to the body part or to suck air through the hybrid line to fix the substrate to the body part. The method of claim 18, The substrate support is a plasma apparatus for vapor phase etching and cleaning, characterized in that formed of polyimide. The method of claim 18, A refrigerant circulation path formed by connecting the plurality of hybrid lines to the dielectric layer, And driving the electrode unit to circulate the refrigerant for cooling the substrate through the hybrid line and the refrigerant circulation path when the substrate is fixed.

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