WO2014109466A1 - 웨이퍼 처리장치의 배기시스템 - Google Patents
웨이퍼 처리장치의 배기시스템 Download PDFInfo
- Publication number
- WO2014109466A1 WO2014109466A1 PCT/KR2013/009800 KR2013009800W WO2014109466A1 WO 2014109466 A1 WO2014109466 A1 WO 2014109466A1 KR 2013009800 W KR2013009800 W KR 2013009800W WO 2014109466 A1 WO2014109466 A1 WO 2014109466A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- cleaning device
- main body
- inlet
- processing apparatus
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 claims abstract description 58
- 239000007789 gas Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000003860 storage Methods 0.000 claims abstract description 19
- 239000003517 fume Substances 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims description 115
- 238000012545 processing Methods 0.000 claims description 39
- 238000010926 purge Methods 0.000 claims description 31
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 210000002445 nipple Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F7/00—Ventilation
- F24F7/007—Ventilation with forced flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
Definitions
- the present invention relates to a wafer processing apparatus (EFEM), and more particularly, to allow air in an EFEM to contact a wafer to prevent contamination of the wafer by a small amount of residual gas remaining or floating in the EFEM and the wafer. It is related with the exhaust system of the wafer processing apparatus which minimized that.
- EFEM wafer processing apparatus
- a wafer WF which is a core component of a semiconductor, includes an impurity ion implantation process for implanting impurity ions of group 3B or 5B in a semiconductor processing equipment BS and thin film deposition for forming a material film on a semiconductor substrate.
- a process, an etching process for forming the material film in a predetermined pattern, and a chemical mechanical polishing process for sequentially removing the step by polishing the wafer surface after depositing an interlayer insulating film or the like on the wafer are sequentially performed.
- the wafer WF which has undergone such a process, is formed on the wafer through the process described above in the wafer processing apparatus EFEM (hereinafter referred to as “processing apparatus EM”) shown in FIGS. 1A and 1B. Removes process gas and process by-product fumes remaining in the process.
- processing apparatus EM wafer processing apparatus EFEM
- the conventional processing apparatus EM is composed of a main body MB, a conveying apparatus ME, a side storage ST, and a load port LP.
- the main body MB is formed in a sealed box shape, and an exhaust device FS is provided on the upper side thereof, and a transfer device ME made of a robot arm is provided therein.
- the exhaust device FS is a ceiling-mounted unit generally referred to as a FFU (Fan Filter Unit), and includes a fan FN and a filter FT.
- FFU Fluor Filter Unit
- the fan FN is rotated by an electric motor (not shown), and the filter FT can collect fine dust of about 0.3 ⁇ m at a rate of 99.99%. Therefore, the inside of the processing apparatus EM is highly clean. I can keep it.
- One side storage stage ST is provided at each end of the main body MB, and in this side storage stage ST, a plurality of wafers WF having been processed by the above-described semiconductor processing equipment BS can be stacked.
- a cassette WC is provided.
- the wafer cassette removes process gases and fumes generated through the above-described processes.
- the wind power generated by the exhaust device FS provided in the upper part of the main body MB is a wafer WF provided in the side storage ST by the pressure acting on the exhaust port provided with a pump (not shown).
- Process gas and fume hereinafter referred to as "foreign material" are removed.
- the wafer WF from which the foreign matter is removed is stacked on the load port LP provided on one side in the longitudinal direction of the main body MB and carried out as a finished product.
- the description will be omitted for the wafer storage WS that stays in order to move the wafer-processed wafer WF to another semiconductor processing equipment BS.
- the exhaust device has a problem that the maintenance cost is high because the power consumption for driving the electric motor is severe.
- the exhaust device is an electric product that is driven as electricity, there is a problem that the life is shortened due to an electrical failure.
- the present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to prevent foreign substances such as process gases and fumes floating in a wafer processing apparatus from contacting the wafers in the side storage, thereby preventing secondary wafers. To prevent contamination.
- Another object of the present invention is to provide an exhaust device which can be used almost semi-permanently without failure by allowing exhaust to be performed by compressed air.
- a main body provided on one side of the semiconductor processing equipment, a transfer device provided at least one to transfer the wafer from inside the main body, and a side storage provided at one end of the main body to stack a plurality of wafers.
- an exhaust device provided in the main body to remove foreign matters on the wafer surface provided with a plurality of side storages, and a load port for transporting a plurality of stacked wafers from which foreign matters are removed from the side storages as a finished product.
- the wafer processing apparatus is provided with a plurality in the longitudinal direction of the main body
- the wafer processing apparatus includes
- a cleaning device provided to remove foreign substances such as process gas or fume remaining on the wafer provided to the semiconductor manufacturing process module;
- the exhaust device The exhaust device,
- the first main body having an inlet formed in the center so that the air containing the foreign matter ejected by the cleaning device and the lower outer portion of the first main body is inserted
- a seating portion formed with a recess, a circulation portion formed with a circular recess on the inner side of the seating portion, an air supply port formed in a right angle direction of the circulation portion, and an upper end surface of the seating portion so as to be spaced apart from the lower side of the first body by a predetermined distance. It is formed in a lower position, and includes a second air outlet formed in a circular shape on the inside of the cross section of the circulation portion, and the diffusion portion diameter-expanded in the cross section so that the air flowing out through the air outlet.
- a plurality of wafer support members provided with ribs in one horizontal symmetrical shape so as to stack each of the plurality of stacked wafers at predetermined intervals, and are alternately provided in an up and down vertical direction of the wafer support member, and purged in one longitudinal direction.
- a side cleaning device including an inlet port through which gas is introduced, and a spacer having a plurality of injection holes through which purge gas is injected at equal intervals in one side direction of the inlet port;
- a plurality of injection holes are formed at the same level as the injection holes of the spacer at equal intervals in the longitudinal direction provided at one end of the side cleaning device, and at least one inlet is formed at the end thereof.
- At least one sensing means provided on the side of the wafer support member and the spacer alternately provided in the up and down directions, a controller for sensing an electrical signal from the sensing means, and selectively opened and closed according to a signal of the controller. It consists of a pneumatic block provided with a plurality of outlets.
- It further includes a vortex forming portion formed on the bottom in the cross-section to minimize the resistance of the air fluid supplied to the air supply port, and to be quickly discharged through the air outlet.
- It further includes a vortex accelerator formed in a round shape in cross section to promote the vortex formed in the circulation portion and minimize the resistance of the air fluid.
- a side of the wafer is formed in a hexahedral box shape on both sides and the back side, a plurality of injection holes are formed on one surface provided with the wafer, the side surface is provided with an inlet for the purge gas flows in any one of the five surfaces in which the injection hole is not formed, It characterized in that it comprises a rear cleaning device.
- One side of the wafer is provided on both sides and the rear surface of the wafer, and a case having an inlet through which purge gas flows into any one of the five non-opening surfaces, and a purge gas provided in the case and introduced from the inlet. It consists of a porous filter for spraying.
- the foreign matter such as the process gas and the fume floating in the wafer processing apparatus is prevented from contacting the wafer in the side storage, so that the cleaning operation is completed. It is effective in preventing contamination.
- 1A is a view of a conventional wafer processing apparatus viewed from one side
- FIG. 1B is a cross-sectional view taken along the line “A”-“A” of FIG. 1A, which is a plan view of the wafer processing apparatus.
- FIG. 1B is a cross-sectional view taken along the line “A”-“A” of FIG. 1A, which is a plan view of the wafer processing apparatus.
- FIG. 2 is a plan view of the exhaust system of the wafer processing apparatus according to the present invention.
- FIG. 3 is a perspective view showing an exhaust system of the wafer processing apparatus according to the present invention.
- FIG. 4 is a perspective view showing a cleaning apparatus of the wafer processing apparatus exhaust system according to the present invention.
- FIG. 5 is an exploded perspective view showing a wafer support member and a spacer in the cleaning device configuration of the exhaust system according to the present invention
- Figure 6 is a perspective view showing the overall configuration of the cleaning device of the present invention.
- FIG. 7 is a perspective view showing an exhaust device of the exhaust system according to the present invention.
- FIG. 9 is a perspective view showing another embodiment of the cleaning apparatus according to the present invention.
- FIG. 10 is a perspective view showing another embodiment of the cleaning apparatus according to the present invention.
- the exhaust system 10 of the wafer processing apparatus 1 according to the present invention is roughly divided into a cleaning apparatus 100 and an exhaust apparatus 200.
- the cleaning device 100 includes a side cleaning device 110 and a rear cleaning device 130.
- the side cleaning apparatus 110 includes a wafer support member 111 and a spacer 113.
- the wafer support member 111 is provided with a rib 111a and a through hole 111b.
- the rib 111a has a stepped portion 111aa formed at an edge of the wafer 5 so as to easily seat the wafer 5 inserted therein.
- the stepped portion 111aa is preferably formed so that the loaded wafer 5 does not protrude upward in the operation described later.
- a plurality of through holes 111b are formed at equal intervals in the longitudinal direction to facilitate fastening of the plurality of spacers 113 to be described later and bolts BT.
- a spacer 113 is provided above the wafer support member 111.
- the spacer 113 has a bar shape having a rectangular cross section, and an inlet 113a is provided to allow a purge gas injected from the pneumatic block 190 to be described later in one longitudinal direction, and a right angle direction of the inlet 113a.
- a plurality of injection holes 113b are formed at equal intervals.
- the inlet 113a is directly connected to the outlet 191 of any one of the pneumatic blocks 190 in the operation described below, so that only the injection port 113b of the portion where the wafer 5 is provided is purged gas (N2 Gas). Was allowed to erupt.
- Through holes 113c are formed to facilitate bolting at positions coinciding with the through holes 111b of the wafer support member 111 at equal intervals in the longitudinal direction of the spacer 110.
- a plurality of sets of the wafer support member 111 and the spacer 113 may be repeated in the vertical direction to clean the stacked wafers 5.
- One side of the side cleaning device 110 having such a configuration, that is, the rear cleaning device 130 is provided to the rear with respect to the direction shown in FIG.
- the rear cleaning device 130 is provided with a plurality of stacking devices at right angles to each rear of the side cleaning device 110, and the injection holes 131 at the same level as the injection holes 113b of the spacer 113 at equal intervals in the longitudinal direction. Many are formed.
- At least one inlet 133 is provided at an end, and the inlet 133 may be piped by adding a separate pneumatic block 190, as shown in FIG.
- the pipe may be branched from the line connected to the inlet 112a.
- One side surface of the injection hole 131 is formed in the arc-shaped groove 135 is formed so as not to interfere with the stacked wafer (5) in the operation described later.
- the cleaning device 100 further includes a sensing means 150, the controller 170 and the pneumatic block 190.
- Sensing means 150 is an optical sensor (Optics Sensor) is provided with at least one or more in the vertical direction alternately provided with the spacer 113 and the wafer support member 111.
- the sensing means 150 detects the wafer 5 when the wafer 5 is loaded in the wafer support member 111 of the cleaning apparatus 100 according to the present invention in the operation described below to generate an electrical signal to the controller 170.
- the controller 170 in accordance with the electrical signal detected by the sensing means 150, the program so that the purge gas is ejected only on the side, the portion provided with the wafer 5 of the rear cleaning apparatus 110, 130. It is.
- purge gas is supplied to the inlet port 191 of the pneumatic block 190 by the program to the inlets 113a and 133 of the side and rear cleaning devices 110 and 130, and the supplied purge gas is It ejects through each injection hole 113b (131).
- the exhaust device 200 is provided on one side of the cleaning device 100.
- the exhaust apparatus 200 includes first and second bodies 200a and 200b.
- the first body 200a is formed in a disk shape, and an inlet 210 is formed at the center thereof so that the purge gas generated in the cleaning apparatus 100 can be introduced in the operation described later.
- the inlet 210 is formed with an inclined portion 211 so as to gradually widen from the lower side to the upper side with respect to the illustrated direction, and the inclined portion 211 is capable of introducing a large amount of external air as much as possible. If possible, it is desirable to form at an angle.
- the first main body 200a is coupled to the second main body 200b, and the second main body 200b includes a seating part 220, a circulation part 230, an air supply port 240, and an air outlet 250. ) And the diffusion part 260.
- the seating part 220 is formed as a circular recess to insert the lower outer side of the first body 200a.
- the circulation part 230 is formed as a circular groove on the inner side in the cross section of the seating portion 220, a semicircular vortex forming portion 231 is formed in the cross section at the bottom of the groove with respect to the direction shown.
- the vortex forming part 231 minimizes the resistance of the air fluid supplied to the air supply port 240 to be described later, and forms the end thereof in a semi-circular shape so that the air fluid can be quickly discharged through the air outlet 250. As a result, vortex formation was facilitated.
- Only one air supply port 240 is formed in a right angle direction of the circulation unit 230.
- Compressed air of an air compressor is supplied by combining an nipple, which is a pipe material (not illustrated).
- the air supply port 240 may be installed at only one place because air is smoothly circulated in the circulation unit 230.
- the air outlet 250 the upper end of the cross-section is formed at a position lower than the upper surface of the seating portion 220 so as to be spaced apart from the lower side of the first body (200a) by a predetermined distance, the upper end of the cross-section is a vortex flow promoting portion 251 is formed.
- the vortex promotion unit 251 is also formed in a round shape in cross section so that the compressed air supplied to the air supply port 240 promotes the vortex formed in the circulation unit 230 and minimizes the resistance of the air fluid. .
- the air flowing out through the air outlet 250 is further amplified through the diffusion part 260.
- the diffuser 260 As the inner portion of the diffuser 260 is gradually enlarged toward the lower side based on the illustrated direction, compressed air is amplified, and the amplified compressed air is diffused 260 of the exhaust device 200 according to the present invention. In addition, air circulating around the air (see the “W” mark in FIGS. 3 and 8) is also absorbed and exhausted through a duct not shown.
- a plurality of wafers 5 to be cleaned are supplied to the cleaning apparatus 100 according to the present invention.
- the sensing means 150 provided in one vertical direction detects this, and transmits this sensing signal to the controller 170.
- the controller 170 executes a pre-programmed program according to the signal, and the purge gas is supplied only to the exhaust device 110 and 130 at the side and the rear side of the portion where the wafer 5 is inserted. Any one of the outlets 191 is opened and is ejected through the respective injection ports 113b and 131.
- purge gas is ejected to only the side and rear exhaust apparatuses 110 and 130 provided with the wafer 5 according to the detection signal of the sensing means 150. 5) Cleaning is done.
- the purge gas containing foreign substances such as process gas and fume remaining on the wafer 5 flows into the main body of the wafer processing apparatus 1 through the side storage ST, and the purge gas according to the present invention. It is processed through the exhaust device (200).
- the exhaust device 200 according to the present invention is supplied with compressed air supplied from an air compressor (not shown) through the air supply port 240 according to the present invention.
- the compressed air circulates in an annular circulation portion 230 when viewed in a plan view, and the vortices formed in the vortex forming portion 231 provided at the bottom of the circulation portion 230 are formed in the upper portion of the first body 200a.
- the air outlet 250 is discharged at a high speed through the air outlet 250 spaced apart from the bottom by a predetermined distance.
- the air outlet 250 also has a vortex accelerator 251 in a round shape at the end to minimize the resistance of the compressed air in which the vortex is formed.
- the air fluid which is further accelerated by the formed vortex, is diffused and discharged through the diffusion portion 260 without resistance.
- the air introduced at a constant speed is formed as a vortex by the action of the circulation unit 230, the air outlet 250, the diffusion unit 260 and the like of the exhaust device 200 according to the present invention. It spreads and discharges at a faster rate.
- the purge gas discharged from the cleaning device 100 to the main body of the wafer processing device 1 by the wind speed and the wind pressure of the compressed air discharged by the above-described action is the inlet of the first body 200a of the exhaust device 200. Inflow to the 210, as described above, is discharged through the duct (not shown), such as compressed air discharged at a high speed through the diffusion unit 260.
- the purifier 100 and the exhaust apparatus 200 discharge the purge gas containing the foreign substances such as process gas and fumes remaining on the wafer from the side storage and at the same time discharge the outside of the wafer processing apparatus. By doing so, secondary contamination of the wafer 5 which occurs in the process of moving from the side storage to the load port is prevented.
- the air that is diffused through the diffusion portion 260 of the exhaust device 200 according to the present invention and quickly discharged also absorbs the air floating around (see the “W” mark in FIGS. 3 and 8) and thus the duct (not shown). Through the air).
- the exhaust device 200 can exhaust the surrounding air without a separate power source, thereby reducing the maintenance cost in operating the semiconductor processing equipment (1).
- the corners of the semiconductor processing equipment are formed by the circulation unit 230, the air outlet 270, the diffusion unit 290, and the like. By absorbing the air floating in the portion, the exhaust efficiency of the purge gas is improved.
- FIG 9 shows another embodiment of the cleaning apparatus 100 according to the present invention.
- the cleaning device 100 consists of a side cleaning device (110a) and a rear cleaning device (130a).
- a side cleaning device 110a
- a rear cleaning device 130a
- the side and rear cleaning devices 110a and 130a in the present embodiment will be described only with respect to the side cleaning device 110a because they are made of the same configuration only in different positions.
- the side cleaning device 110a combines a stainless plate into a hexahedral box shape, forms a myriad of injection holes 112 on one side, and an inlet port 114 into which purge gas flows into one of five surfaces where the injection holes are not formed. ) Is provided.
- the purge gas (N2 gas) introduced through the inlet 114 is introduced into the side of the box-shaped side and rear cleaning devices 110a and 130a, and the injection port 112 is opened by the pressure of the purge gas. Through this, purge gas is injected at even pressure from both sides and the rear.
- the injected purge gas is exhausted to the duct (not shown) through the exhaust device 200 in the above-described embodiment in a state of containing foreign substances such as fumes remaining on a wafer stacked in a plurality of cassettes (not shown). .
- FIG 10 shows another embodiment of the cleaning apparatus 100 according to the present invention.
- the side cleaning device 110b includes a case 110ba in the form of a rectangular container with one surface open, a porous filter 110c inside the case 110ba, and among the five surfaces that are not open. Install inlet 114 at one site.
- the purge gas (N2 Gas) supplied through the inlet 114 is uniformly injected through the micropores formed in the porous filter 110c, and foreign substances such as fumes remaining on a wafer stacked in a plurality of cassettes (not shown). It is exhausted to the duct not shown through the exhaust device 200 in the above-described embodiment in the state containing.
- the porous filter 110c is a material in which numerous pores are formed by compressing and sintering fibers or powder at a constant pressure.
- the injection of the purge gas N2 Gas
- the signal sensed by the sensing means not shown is transmitted to the controller (not shown), the purge gas is injected by this controller .
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
Description
Claims (9)
- 웨이퍼 표면에 불순물 이온 주입공정과 박막증착공정과 식각공정과 평탄화 공정등을 순차적으로 수행하는 반도체 공정장비와, 상기 반도체 공정장비에서 공정이 완료된 웨이퍼 표면에 잔류하는 공정가스 및 흄등의 이물질을 제거할 수 있도록, 상기 반도체 공정장비 일측에 구비된 본체와, 상기 본체 내부에서 상기 웨이퍼를 이송할 수 있도록 적어도 하나 이상 구비된 이송장치와, 상기 본체 일단에 구비되어 다수의 웨이퍼를 적층한 사이드 스토레이지와, 상기 사이드 스토레이지에 다수 구비된 웨이퍼 표면에 이물질을 제거할 수 있도록 상기 본체에 구비된 배기장치와, 상기 사이드 스토레이지에서 이물질이 제거된 다수 적층된 웨이퍼가 완성품으로 반출될 수 있도록 로드 포트가 상기 본체의 길이방향으로 다수 구비된 웨이퍼 처리장치에 있어서,상기 웨이퍼 처리장치는,상기 반도체 제조공정모듈에 제공되는 웨이퍼에 잔존하는 공정가스나 흄등의 이물질을 제거하도록 구비된 세정장치를 포함하고;상기 배기장치는,상기 웨이퍼 처리장치의 본체 하측에 구비되며, 상기 세정장치에 의해 분출되는 이물질이 함유된 공기를 유입할 수 있도록 그 중심에 유입구가 형성된 제 1본체와, 상기 제 1본체의 하부 외측이 삽입되도록 원형 요홈으로 형성된 안착부와, 상기 안착부의 단면상 내측에 원형 요홈으로 형성된 순환부와, 상기 순환부의 직각방향으로 형성된 에어 공급구와, 상기 제 1본체의 하측과 소정거리 이격되도록 단면상 상단이 상기 안착부의 상면보다 낮은 위치에 형성되며, 상기 순환부의 단면상 내측에 원형으로 형성된 에어 유출구와, 상기 에어 유출구를 통해 유출된 에어가 확산되도록 단면상 내경이 확경되는 확산부로 이루어진 제 2본체를 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 세정장치는,상기 다수 적층되는 각각의 웨이퍼를 소정간격 이격시켜 적층할 수 있도록 일측 수평방향 대칭형으로 리브가 마련된 다수의 웨이퍼 지지부재와, 상기 웨이퍼 지지부재의 상, 하 수직방향으로 번갈아 구비되며, 길이방향 일측으로 퍼지가스가 유입되는 유입구와, 상기 유입구의 일측 직각방향 등간격으로 퍼지가스(Purge Gas)가 분사되는 다수의 분사구가 마련되는 스페이서로 이루어진 측면세정장치와;상기 측면세정장치의 일단에 직각방향으로 구비된 길이방향 등간격으로 상기 스페이서의 분사구와 동일 레벨에 분사구가 다수 형성되고, 단부에 적어도 하나 이상의 유입구가 마련된 후면세정장치로 이루어진 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 2항에 있어서,상기 후면세정장치는,상기 분사구가 형성된 일측면에 상기 웨이퍼와의 간섭이 생기지 않도록 형성된 호형 요홈을 더 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 세정장치는,상, 하 방향으로 번갈아 구비되는 상기 웨이퍼 지지부재와 스페이서의 측면에 적어도 하나 이상 구비된 감지수단과, 상기 감지수단으로부터의 전기신호를 감지하는 컨트롤러와, 상기 컨트롤러의 신호에 따라, 선택적으로 개폐되도록 다수의 유출구가 마련된 공압 블럭으로 이루어진 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 배기장치의 유입구는,상기 세정장치에서 배출되는 퍼지가스가 유입되는 상측에서 하측으로 갈 수록 점진적으로 내경이 적어지는 유도 경사부를 더 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 순환부는,상기 에어 공급구로 공급되는 공기 유체의 저항을 최소화하고, 상기 에어 유출구를 통해 신속한 배출이 이루어질 수 있도록 단면상 저부에 형성된 와류 형성부를 더 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 에어 유출구는,상기 순환부에서 형성된 와류를 촉진하고 공기 유체의 저항을 최소화할 수 있도록 단면상 라운드형으로 형성된 와류 촉진부를 더 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 세정장치는,상기 웨이퍼의 양측면과 후면에 육면체 박스형상으로 이루어지며, 상기 웨이퍼가 구비된 일면에 다수의 분사공이 형성되며, 상기 분사공이 형성되지 않은 5면중 어느 일면에 퍼지가스가 유입되는 유입구가 구비되는 측면, 후면 세정장치를 포함하는 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
- 제 1항에 있어서,상기 세정장치는,상기 웨이퍼의 양측면과 후면에 상기 웨이퍼가 구비된 일면이 개구되며, 개구되지 않은 5면중 어느 일면에 퍼지가스가 유입되는 유입구가 구비되는 케이스와, 상기 케이스 내부에 구비되어 상기 유입구로부터 유입되는 퍼지가스를 분사하는 다공질 필터로 이루어진 것을 특징으로 하는 웨이퍼 처리장치의 배기시스템.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/760,345 US11342200B2 (en) | 2013-01-14 | 2013-10-31 | Wafer treatment device |
US17/726,445 US12014937B2 (en) | 2013-01-14 | 2022-04-21 | Wafer treatment device |
US18/664,004 US20240304468A1 (en) | 2013-01-14 | 2024-05-14 | Wafer treatment device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130003948A KR101444241B1 (ko) | 2013-01-14 | 2013-01-14 | 웨이퍼 처리장치의 배기시스템 |
KR10-2013-0003948 | 2013-01-14 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/760,345 A-371-Of-International US11342200B2 (en) | 2013-01-14 | 2013-10-31 | Wafer treatment device |
US17/726,445 Continuation US12014937B2 (en) | 2013-01-14 | 2022-04-21 | Wafer treatment device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014109466A1 true WO2014109466A1 (ko) | 2014-07-17 |
Family
ID=51167087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2013/009800 WO2014109466A1 (ko) | 2013-01-14 | 2013-10-31 | 웨이퍼 처리장치의 배기시스템 |
Country Status (3)
Country | Link |
---|---|
US (3) | US11342200B2 (ko) |
KR (1) | KR101444241B1 (ko) |
WO (1) | WO2014109466A1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102162366B1 (ko) * | 2014-01-21 | 2020-10-06 | 우범제 | 퓸 제거 장치 |
KR101670383B1 (ko) | 2015-03-10 | 2016-10-28 | 우범제 | 퍼지가스 분사 플레이트 및 이를 구비한 퓸 제거 장치 |
KR101670382B1 (ko) | 2015-03-10 | 2016-10-28 | 우범제 | 퍼지가스 분사 플레이트 및 그 제조 방법 |
KR101670381B1 (ko) * | 2015-03-10 | 2016-10-28 | 우범제 | 퓸 제거장치용 히터 및 이를 이용한 퓸 제거장치 |
KR101779081B1 (ko) | 2015-06-09 | 2017-09-18 | 피코앤테라(주) | 퓸 제거 장치 |
JP6450653B2 (ja) * | 2015-06-24 | 2019-01-09 | 東京エレクトロン株式会社 | 格納ユニット、搬送装置、及び、基板処理システム |
KR101688620B1 (ko) | 2015-12-24 | 2016-12-21 | 피코앤테라(주) | 웨이퍼 수납용기 |
KR101865636B1 (ko) * | 2016-07-06 | 2018-06-08 | 우범제 | 웨이퍼 수납용기 |
US10388547B2 (en) | 2017-06-23 | 2019-08-20 | Applied Materials, Inc. | Side storage pods, equipment front end modules, and methods for processing substrates |
TWI676089B (zh) | 2017-06-23 | 2019-11-01 | 美商應用材料股份有限公司 | 側儲存倉、電子裝置處理系統、和處理基板的方法 |
KR101954671B1 (ko) | 2018-07-16 | 2019-03-06 | 주식회사 에이케이테크 | 사이드 스토리지의 웨이퍼 수용 카세트용 측면 노즐 유닛 및 상기 사이드 스토리지의 웨이퍼 수용 카세트용 측면 노즐 유닛을 포함하는 사이드 스토리지의 웨이퍼 수용 카세트 |
JP7234527B2 (ja) * | 2018-07-30 | 2023-03-08 | Tdk株式会社 | センサー内蔵フィルタ構造体及びウエハ収容容器 |
KR102283311B1 (ko) * | 2019-01-07 | 2021-07-29 | 피코앤테라(주) | 웨이퍼 수납용기 |
KR102123275B1 (ko) | 2019-01-30 | 2020-06-16 | 주식회사 에이케이테크 | 사이드 스토리지의 웨이퍼 수용 카세트용 측면 노즐 유닛 및 상기 사이드 스토리지의 웨이퍼 수용 카세트용 측면 노즐 유닛을 포함하는 사이드 스토리지의 웨이퍼 수용 카세트 |
KR102212856B1 (ko) | 2019-04-08 | 2021-02-05 | 주식회사 에이케이테크 | 사이드 스토리지의 웨이퍼 수용 카세트용 내부 후면 가스 분사 유닛 |
KR102197806B1 (ko) * | 2019-05-07 | 2021-01-04 | (주)벡터에스 | 반도체 제조설비의 흄 정화장치 |
KR102217711B1 (ko) * | 2019-07-09 | 2021-02-22 | 주식회사 에이케이테크 | 사이드 스토리지용 배기 유닛 |
KR102479895B1 (ko) | 2020-07-03 | 2022-12-21 | 우범제 | 웨이퍼 수납용기 |
KR102701757B1 (ko) * | 2021-04-27 | 2024-09-02 | 우범제 | 웨이퍼 수납용기 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11307623A (ja) * | 1998-04-16 | 1999-11-05 | Tokyo Electron Ltd | 被処理体の収納装置及び搬出入ステージ |
KR20110041445A (ko) * | 2011-02-07 | 2011-04-21 | 우범제 | 퓸 제거장치 및 이를 이용한 반도체 제조장치 |
KR101075171B1 (ko) * | 2011-02-01 | 2011-10-19 | 주식회사 에스엠아이 | 가스분사블록을 구비하는 사이드 스토리지 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321714A (ja) * | 1997-05-20 | 1998-12-04 | Sony Corp | 密閉コンテナ並びに密閉コンテナ用雰囲気置換装置及び雰囲気置換方法 |
US6106213A (en) * | 1998-02-27 | 2000-08-22 | Pri Automation, Inc. | Automated door assembly for use in semiconductor wafer manufacturing |
US6899145B2 (en) * | 2003-03-20 | 2005-05-31 | Asm America, Inc. | Front opening unified pod |
US20080173238A1 (en) * | 2006-12-12 | 2008-07-24 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel |
TWI562940B (en) * | 2008-01-13 | 2016-12-21 | Entegris Inc | Wafer container and method of manufacture |
US9054144B2 (en) * | 2009-12-10 | 2015-06-09 | Entegris, Inc. | Porous barrier for evenly distributed purge gas in a microenvironment |
-
2013
- 2013-01-14 KR KR1020130003948A patent/KR101444241B1/ko active Active
- 2013-10-31 US US14/760,345 patent/US11342200B2/en active Active
- 2013-10-31 WO PCT/KR2013/009800 patent/WO2014109466A1/ko active Application Filing
-
2022
- 2022-04-21 US US17/726,445 patent/US12014937B2/en active Active
-
2024
- 2024-05-14 US US18/664,004 patent/US20240304468A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11307623A (ja) * | 1998-04-16 | 1999-11-05 | Tokyo Electron Ltd | 被処理体の収納装置及び搬出入ステージ |
KR101075171B1 (ko) * | 2011-02-01 | 2011-10-19 | 주식회사 에스엠아이 | 가스분사블록을 구비하는 사이드 스토리지 |
KR20110041445A (ko) * | 2011-02-07 | 2011-04-21 | 우범제 | 퓸 제거장치 및 이를 이용한 반도체 제조장치 |
Also Published As
Publication number | Publication date |
---|---|
US12014937B2 (en) | 2024-06-18 |
KR20140091909A (ko) | 2014-07-23 |
KR101444241B1 (ko) | 2014-09-26 |
US20150364346A1 (en) | 2015-12-17 |
US11342200B2 (en) | 2022-05-24 |
US20240304468A1 (en) | 2024-09-12 |
US20220246449A1 (en) | 2022-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2014109466A1 (ko) | 웨이퍼 처리장치의 배기시스템 | |
TWI726283B (zh) | 具有工廠介面腔室過濾器淨化的基板處理設備及方法 | |
WO2013147481A1 (ko) | 선택적 에피택셜 성장을 위한 장치 및 클러스터 설비 | |
US20150101482A1 (en) | Mechanisms for controlling gas flow in enclosure | |
WO2019156317A1 (ko) | 오염물질 배출 장치 | |
WO2017052100A1 (ko) | 웨이퍼 처리장치의 배기장치 | |
WO2014150234A1 (en) | Processing systems, apparatus, and methods adapted to process substrates in electronic device manufacturing | |
JPH1096332A (ja) | クリーンルーム | |
WO2016167555A1 (ko) | 기판처리장치 | |
CN109712906B (zh) | 具有清洗功能的晶圆存储装置及半导体生产设备 | |
WO2016171452A1 (ko) | 기판처리장치 및 챔버 세정방법 | |
KR20220114815A (ko) | 기류 균일화 장치를 구비한 efem | |
WO2013015481A1 (ko) | 웨이퍼 캐리어 | |
US20040069409A1 (en) | Front opening unified pod door opener with dust-proof device | |
WO2014046448A1 (ko) | 웨이퍼 상에 잔존하는 공정가스를 제거하는 웨이퍼 퍼징 카세트를 갖춘 웨이퍼 처리장치 | |
JP3697275B2 (ja) | 局所クリーン化におけるインターフェイスボックス及びそのクリーンルーム | |
CN1177711A (zh) | 净化室 | |
WO2024123030A1 (ko) | 기판처리챔버 및 기판처리장치 | |
KR102789454B1 (ko) | 복수의 제습모듈을 포함하는 제습기 및 이를 포함하는 efem | |
JP7069651B2 (ja) | ロードポート装置 | |
WO2024147422A1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JPH1097962A (ja) | 処理装置及び処理システム | |
WO2021034008A1 (ko) | 로드포트모듈의 웨이퍼 용기의 습도저감장치 및 이를 구비한 반도체 공정장치 | |
KR102732244B1 (ko) | 습도 제어 efem | |
KR102772311B1 (ko) | 배기장치를 포함하는 제습 efem |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13870700 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14760345 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC - FORM 1205A (20.11.2015) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13870700 Country of ref document: EP Kind code of ref document: A1 |