[go: up one dir, main page]

WO2013188574A3 - Multilayer substrate structure - Google Patents

Multilayer substrate structure Download PDF

Info

Publication number
WO2013188574A3
WO2013188574A3 PCT/US2013/045482 US2013045482W WO2013188574A3 WO 2013188574 A3 WO2013188574 A3 WO 2013188574A3 US 2013045482 W US2013045482 W US 2013045482W WO 2013188574 A3 WO2013188574 A3 WO 2013188574A3
Authority
WO
WIPO (PCT)
Prior art keywords
matching layer
lattice
thermal
substrate
chemical element
Prior art date
Application number
PCT/US2013/045482
Other languages
French (fr)
Other versions
WO2013188574A2 (en
Inventor
Indranil De
Francisco Machuca
Original Assignee
Tivra Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/794,327 external-priority patent/US8956952B2/en
Priority claimed from US13/794,372 external-priority patent/US9879357B2/en
Application filed by Tivra Corporation filed Critical Tivra Corporation
Priority to KR1020157000842A priority Critical patent/KR20150047474A/en
Priority to CN201380043629.8A priority patent/CN104781938B/en
Priority to EP13803800.5A priority patent/EP2862206A4/en
Priority to JP2015517401A priority patent/JP6450675B2/en
Publication of WO2013188574A2 publication Critical patent/WO2013188574A2/en
Publication of WO2013188574A3 publication Critical patent/WO2013188574A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A multilayer substrate structure comprises a substrate, a thermal matching layer formed on the substrate and a lattice matching layer above the thermal matching layer. The thermal matching layer includes at least one of molybdenum, molybdenum-copper, mullite, sapphire, graphite, aluminum-oxynitrides, silicon, silicon carbide, zinc oxides, and rare earth oxides. The lattice matching layer includes a first chemical element and a second chemical element to form an alloy. The first and second chemical element has similar crystal structures and chemical properties. The coefficient of thermal expansion of the thermal matching layer and the lattice parameter of the lattice matching layer are both approximately equal to that of a member of group III-V compound semiconductors. The lattice constant of the lattice matching layer is approximately equal to that of a member of group III-V compound semiconductor. The lattice matching layer and the thermal matching layer may be deposited on a substrate using a lateral control shutter.
PCT/US2013/045482 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same WO2013188574A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020157000842A KR20150047474A (en) 2012-06-14 2013-06-12 Multilayer substrate structure
CN201380043629.8A CN104781938B (en) 2012-06-14 2013-06-12 Multi-layer substrate structure and the method and system for manufacturing it
EP13803800.5A EP2862206A4 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same
JP2015517401A JP6450675B2 (en) 2012-06-14 2013-06-12 Method for forming a multilayer substrate structure

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US201261659944P 2012-06-14 2012-06-14
US61/659,944 2012-06-14
US201261662918P 2012-06-22 2012-06-22
US61/662,918 2012-06-22
US13/794,327 US8956952B2 (en) 2012-06-14 2013-03-11 Multilayer substrate structure and method of manufacturing the same
US13/794,285 US20130333611A1 (en) 2012-06-14 2013-03-11 Lattice matching layer for use in a multilayer substrate structure
US13/794,372 2013-03-11
US13/794,372 US9879357B2 (en) 2013-03-11 2013-03-11 Methods and systems for thin film deposition processes
US13/794,327 2013-03-11
US13/794,285 2013-03-11

Publications (2)

Publication Number Publication Date
WO2013188574A2 WO2013188574A2 (en) 2013-12-19
WO2013188574A3 true WO2013188574A3 (en) 2014-05-08

Family

ID=49758884

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/045482 WO2013188574A2 (en) 2012-06-14 2013-06-12 Multilayer substrate structure and method and system of manufacturing the same

Country Status (6)

Country Link
EP (1) EP2862206A4 (en)
JP (1) JP6450675B2 (en)
KR (1) KR20150047474A (en)
CN (1) CN104781938B (en)
TW (1) TWI518747B (en)
WO (1) WO2013188574A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
EP2942803B1 (en) * 2014-05-08 2019-08-21 Flosfia Inc. Crystalline multilayer structure and semiconductor device
CN106057641A (en) * 2016-05-27 2016-10-26 清华大学 Semiconductor structure and method for preparing semiconductor structure
CN106057643A (en) * 2016-05-27 2016-10-26 清华大学 Semiconductor structure and method for preparing semiconductor structure
EP3658959A4 (en) 2017-07-26 2020-12-23 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR WITH BUILT-IN DEPOLARIZATION DEVICE
NL2021178B1 (en) 2017-08-03 2020-08-13 Asml Netherlands Bv Simultaneous Double-Side Coating Of Multilayer Graphene Pellicle By Local Thermal Processing
WO2020194803A1 (en) * 2019-03-28 2020-10-01 日本碍子株式会社 Ground substrate and method for producing same
JP7283273B2 (en) * 2019-07-01 2023-05-30 株式会社レゾナック MAGNETIC RECORDING MEDIUM, MANUFACTURING METHOD THEREOF, AND MAGNETIC RECORDING/PLAYBACK APPARATUS

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1113211A (en) * 1964-06-01 1968-05-08 Rca Corp Field effect transistor with insulated-gate
US4222345A (en) * 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
US4999314A (en) * 1988-04-05 1991-03-12 Thomson-Csf Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material
EP0499982A1 (en) * 1991-02-19 1992-08-26 Energy Conversion Devices, Inc. Method of forming a single crystal material
US5821562A (en) * 1993-12-20 1998-10-13 Sharp Kabushiki Kaisha Semiconductor device formed within asymetrically-shaped seed crystal region
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
US20030017626A1 (en) * 2001-07-23 2003-01-23 Motorola Inc. Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices
US20030043872A1 (en) * 2001-08-22 2003-03-06 Mikihiro Yokozeki Semiconductor laser device
US6645833B2 (en) * 1997-06-30 2003-11-11 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
US7229500B2 (en) * 2000-11-20 2007-06-12 Parallel Synthesis Technologies, Inc. Methods and devices for high throughput crystallization
US7435300B2 (en) * 2001-10-26 2008-10-14 Hermosa Thin Film Co., Ltd. Dynamic film thickness control system/method and its utilization
US20090278164A1 (en) * 2006-02-16 2009-11-12 Showa Denko K.K. GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2003142781A (en) * 2001-08-22 2003-05-16 Furukawa Electric Co Ltd:The Semiconductor laser element
JP5446059B2 (en) * 2006-04-24 2014-03-19 豊田合成株式会社 GaN-based semiconductor light emitting device manufacturing method
KR20090096549A (en) * 2007-01-04 2009-09-10 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1113211A (en) * 1964-06-01 1968-05-08 Rca Corp Field effect transistor with insulated-gate
US4222345A (en) * 1978-11-30 1980-09-16 Optical Coating Laboratory, Inc. Vacuum coating apparatus with rotary motion assembly
US4999314A (en) * 1988-04-05 1991-03-12 Thomson-Csf Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material
EP0499982A1 (en) * 1991-02-19 1992-08-26 Energy Conversion Devices, Inc. Method of forming a single crystal material
US5821562A (en) * 1993-12-20 1998-10-13 Sharp Kabushiki Kaisha Semiconductor device formed within asymetrically-shaped seed crystal region
US5906857A (en) * 1997-05-13 1999-05-25 Ultratherm, Inc. Apparatus, system and method for controlling emission parameters attending vaporized in a HV environment
US6645833B2 (en) * 1997-06-30 2003-11-11 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
US7229500B2 (en) * 2000-11-20 2007-06-12 Parallel Synthesis Technologies, Inc. Methods and devices for high throughput crystallization
US20030017626A1 (en) * 2001-07-23 2003-01-23 Motorola Inc. Method and apparatus for controlling propagation of dislocations in semiconductor structures and devices
US20030043872A1 (en) * 2001-08-22 2003-03-06 Mikihiro Yokozeki Semiconductor laser device
US7435300B2 (en) * 2001-10-26 2008-10-14 Hermosa Thin Film Co., Ltd. Dynamic film thickness control system/method and its utilization
US20090278164A1 (en) * 2006-02-16 2009-11-12 Showa Denko K.K. GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
"Phase Diagram Images and Software from the National Physical Laboratory (NPL) for the Zr-Ti System", 4 May 2000 (2000-05-04), XP055177727, Retrieved from the Internet <URL:http://resource.npl.co.uk/mtdata/phdiagrams/png/hfzr.png> [retrieved on 20131112] *
ADACHI, S.: "Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors", 2009, JOHN WILEY & SONS, XP055177728 *
CVERNA, F.: "ASM Ready Reference: Thermal Properties of Metals (#06702G)", THERMAL EXPANSION. ASM INTERNATIONAL, 2002, XP055177730 *
See also references of EP2862206A4 *

Also Published As

Publication number Publication date
CN104781938A (en) 2015-07-15
EP2862206A4 (en) 2015-12-30
TWI518747B (en) 2016-01-21
JP6450675B2 (en) 2019-01-09
EP2862206A2 (en) 2015-04-22
WO2013188574A2 (en) 2013-12-19
TW201405636A (en) 2014-02-01
JP2015526368A (en) 2015-09-10
CN104781938B (en) 2018-06-26
KR20150047474A (en) 2015-05-04

Similar Documents

Publication Publication Date Title
WO2013188574A3 (en) Multilayer substrate structure
WO2006113539A3 (en) Semiconductor devices having gallium nitride epilayers on diamond substrates
WO2010151857A3 (en) Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
WO2012057512A3 (en) Compound semiconductor device and method for manufacturing same
TW200746430A (en) Method of manufacturing semiconductor device, and semiconductor device
WO2015027080A3 (en) Selective deposition of diamond in thermal vias
EP2696365A3 (en) Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
RU2015151123A (en) DEVICES BASED ON SELECTively EPITAXIALLY GROWED MATERIALS OF III-V GROUPS
WO2010141351A3 (en) Wafer bonding technique in nitride semiconductors
JP6375376B2 (en) GaN on silicon substrate using epi twist
TW200636983A (en) Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
WO2012059862A3 (en) Light emitting device with improved extraction efficiency
EP2230332A4 (en) SINGLE CRYSTAL SILICON CARBIDE BLOCK AND SUBSTRATE AND EPITAXIAL WAFERS MADE FROM THE SINGLE CRYSTAL SILICON CARBIDE BLOCK
UA117474C2 (en) SUNSET PROTECTION
GB2525332A (en) Epitaxial film growth on patterned substrate
GB2534675A8 (en) Compound semiconductor device structures comprising polycrystalline CVD diamond
TW200833885A (en) Nitride semiconductor device and nitride semiconductor manufacturing method
WO2014144698A3 (en) Large-area, laterally-grown epitaxial semiconductor layers
KR101878754B1 (en) Method of manufacturing large area gallium nitride substrate
JP2011023664A (en) Epitaxial substrate for electronic device using transverse direction as direction of current conduction and manufacturing method therefor
WO2012051618A3 (en) Method for producing gallium nitride substrates for electronic and optoelectronic devices
WO2011129548A3 (en) Substrate assembly for crystal growth and fabricating method for light emitting device using the same
WO2010124059A3 (en) Crystalline thin-film photovoltaic structures and methods for forming the same
WO2011096684A3 (en) Method for manufacturing galium naitride wafer
WO2012158593A3 (en) SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13803800

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2013803800

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2015517401

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20157000842

Country of ref document: KR

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13803800

Country of ref document: EP

Kind code of ref document: A2