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WO2013159514A1 - 电致发光器件、显示装置和电致发光器件制备方法 - Google Patents

电致发光器件、显示装置和电致发光器件制备方法 Download PDF

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Publication number
WO2013159514A1
WO2013159514A1 PCT/CN2012/085214 CN2012085214W WO2013159514A1 WO 2013159514 A1 WO2013159514 A1 WO 2013159514A1 CN 2012085214 W CN2012085214 W CN 2012085214W WO 2013159514 A1 WO2013159514 A1 WO 2013159514A1
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Prior art keywords
layer
luminescent
electroluminescent device
light
light emitting
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French (fr)
Inventor
杨栋芳
金馝奭
肖田
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US13/995,489 priority Critical patent/US9209416B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • Embodiments of the present invention relate to an electroluminescent device, a display device, and a method of fabricating an electroluminescent device. Background technique
  • the Organic Light-Emitting Diode (OLED) display is also known as an organic electroluminescent display, which is different from the conventional liquid crystal display (LCD).
  • OLEDs do not require backlighting, but are fabricated using very thin luminescent layers and substrates. Therefore, the OLED display device can be made lighter, thinner, has a larger viewing angle, and can significantly save power. Therefore, OLED display devices are becoming more and more popular.
  • FIG. 1 is a schematic structural view of an electroluminescent device in the prior art.
  • the prior art electroluminescent device comprises a substrate 101 and an anode layer 102, a light-emitting layer 103 and a cathode layer 104, which are sequentially formed on the substrate 101, and the anode layer 102 and the cathode layer 104 are respectively connected to the positive electrode of the power source and negative electrode.
  • the substrate 101 may be a glass substrate, a polyester substrate or a polyimide substrate, or the like;
  • the anode layer 102 may be an inorganic metal oxide such as indium tin oxide (ITO), oxidized (ZnO), or the like.
  • ITO indium tin oxide
  • ZnO oxidized
  • High work function metal materials such as gold, copper, silver, platinum, etc.
  • the cathode layer 104 may be a low work function metal material such as lithium, magnesium, calcium, barium, aluminum, and indium
  • the material of the light emitting layer may include a fluorescent material , such as ⁇ ( ⁇ , ⁇ '-diphenyl-fluorene, ⁇ '-bis(1-naphthyl)-1), DPVBI (4,4,-bis(2,2-distyryl)biphenyl) Wait.
  • the position of the recombination zone in the luminescent layer also changes with the voltage, which causes the color of the device to follow. Significant changes in voltage changes. If a P-doped and N-doped device is used, and a substrate that facilitates electron transport is used to fabricate the light-emitting layer, and only a single composite region is used, the light-emitting region is closer to the hole transport layer. However, this also causes excess excitons to diffuse into the hole transport layer, causing no radiation attenuation, resulting in a mismatch in the number of carriers such as electrons and holes in the light-emitting layer 103, and reducing the luminous efficiency of the light-emitting layer 103. Not conducive to improving device efficiency. Summary of the invention
  • Embodiments of the present invention provide an electroluminescent device, a display device, and a method for fabricating an electroluminescent device, which are used to reduce the influence of voltage changes on a recombination region, and solve the problem that the number of electrons and holes in the luminescent layer in the prior art is not Matching, the luminous efficiency of the luminescent layer is low, and the color changes with voltage.
  • One aspect of the present invention provides an electroluminescent device comprising a substrate and an anode layer, a light-emitting layer and a cathode layer which are sequentially disposed over the substrate, the anode layer and the cathode layer being respectively connected to a positive electrode and a negative electrode of a power source. At least one insertion layer for adjusting the electron mobility is disposed in the light-emitting layer.
  • the interposer layer serves to block electron transport to match the number of electrons and holes in the emissive layer.
  • the thickness of the intercalation layer is between 1 and 20 nm.
  • the lowest unoccupied orbital LUMO of the interposer is higher than the LUMO of the emissive layer, and the highest occupied orbit HOMO of the interposer is equal to or lower than the HOMO of the emissive layer.
  • the electron mobility of the intercalation layer is lower than its hole mobility.
  • the material of the intercalation layer includes: an aromatic diamine compound, a triphenylamine compound, an aromatic triamine compound, a biphenyldiamine derivative, a triarylamine polymer, a metal complex. And at least one of a carbazole polymer.
  • the insertion layer is disposed in the light emitting layer: the light emitting layer is provided with an insertion layer, and the insertion layer separates the light emitting layer into a first light emitting sublayer and a second illuminating sub-layer; a ratio of a thickness of the first illuminating sub-layer and the second illuminating sub-layer to a thickness of the luminescent layer ranging between 1 and 99%.
  • the insertion layer is disposed in the light emitting layer, including: at least two interposer layers are disposed in the light emitting layer, and the at least two interposer layers separate the light emitting layer into at least The three-layer light-emitting sub-layer has a ratio of a thickness of each of the light-emitting sub-layers to a thickness of the light-emitting layer ranging from 1 to 99%.
  • the electroluminescent device further includes an electron transport layer and a hole transport layer; the electron transport layer is located between the cathode layer and the light emitting layer, and the hole transport layer is located at Between the anode layer and the luminescent layer.
  • the electroluminescent device further includes: an electron and an exciton blocking layer, a hole and an exciton blocking layer; the electron and exciton blocking layer being disposed on the hole transport layer and Between the light-emitting layers, the holes and the exciton blocking layer are disposed between the electron transport layer and the light-emitting layer.
  • Another aspect of the present invention also provides a display device comprising any of the above-described electroluminescent devices.
  • a still further aspect of the present invention provides a method of fabricating an electroluminescent device, comprising: sequentially preparing an anode layer, a light emitting layer, and a cathode layer on a substrate, the light emitting layer including at least a first light emitting sublayer and a second light emitting layer a layer, and the luminescent layer includes at least one intervening layer disposed therein for adjusting electron mobility.
  • the luminescent layer and the interposer layer are prepared comprising: preparing the first luminescent layer; depositing an intercalation layer on the first luminescent sub-layer; and preparing the second luminescent layer on the intercalating layer.
  • the electroluminescent device and the method for fabricating the same provide an insertion layer in the light-emitting layer to reduce the influence of voltage on the recombination of electrons and holes in the light-emitting layer, and increase electrons and holes in the light-emitting layer.
  • the number of recombination increases the recombination ratio of electrons and holes, thereby improving the luminous efficiency of the luminescent layer, and also prolonging the service life of the electroluminescent device, and the color emitted by the electroluminescent device is also more stable.
  • FIG. 1 is a schematic structural view of an electroluminescent device in the prior art
  • FIG. 2 is a schematic structural view of a first embodiment of an electroluminescent device of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of an electroluminescent device of the present invention.
  • FIG. 4 is a schematic view showing the structure of a third embodiment of the electroluminescent device of the present invention.
  • the electroluminescent device of the present embodiment sequentially includes a substrate 101 and an anode layer 102, a light-emitting layer 103, and a cathode layer 104 which are sequentially formed over the substrate 101.
  • the luminescent layer 103 includes a first illuminating sub-layer 1031 and a second illuminating sub-layer 1032.
  • An intervening layer 105 for adjusting electron transport is disposed between the first illuminating sub-layer 1031 and the second illuminating sub-layer 1032 so as to be in the luminescent layer. The number of electrons and holes matches.
  • the position of the insertion layer 105 may be defined by the thickness ratio of the first luminescent sub-layer 1031 and the second luminescent sub-layer 1032.
  • the thickness of each of the first illuminating sub-layer 1031 and the second illuminating sub-layer 1032 may be between 1 and 99%, and the thickness of the first illuminating sub-layer 1031 and the second illuminating sub-layer 1032.
  • the sum of the ratios of the total thickness of the luminescent layer is 1.
  • the thickness of the interposer layer 105 can range from 1 to 20 nm.
  • the insertion layer 105 is located, for example, in the middle of the light-emitting layer 103, that is, the first light-emitting sub-layer 1031 and the second light-emitting sub-layer 1032 have the same thickness; for example, the insertion layer 105 is located, for example, at a position 1/3 of the thickness of the light-emitting layer 103, that is, The thickness of one of the light-emitting sub-layers 1031 is twice or opposite the thickness of the second light-emitting sub-layer 1032.
  • the light emitting layer may be an organic light emitting layer such as an undoped fluorescent material light emitting layer, a fluorescent material doped organic material layer, or a doped phosphorescent material.
  • the substrate 101 may be a glass substrate, a polyester substrate, a polyimide substrate or the like.
  • the anode layer 102 may be made of an inorganic metal oxide such as indium tin oxide (ITO), oxidized (ZnO), or the like, or a high work function metal material such as gold, copper, silver, platinum or the like.
  • the cathode layer 104 can be made of a low work function metal material such as lithium, magnesium, calcium, barium, aluminum, and indium.
  • the luminescent layer 103 can be selected as follows.
  • the light-emitting layer 103 may be an undoped fluorescent light-emitting organic material layer, such as NPB, Alq3 (8-hydroxyquinoline aluminum), DPVBI (4,4,-bis(2,2-distyryl)biphenyl), etc.
  • NPB undoped fluorescent light-emitting organic material layer
  • Alq3 8-hydroxyquinoline aluminum
  • DPVBI 4,4,-bis(2,2-distyryl)biphenyl
  • the light-emitting layer 103 may be a doped layer of a fluorescent light-emitting organic material such as a fluorescent dopant and a host material.
  • the light emitting layer 103 may be a doped phosphorescent organic material layer (including a phosphorescent dopant and a host material).
  • luminescent materials with transmission capabilities include NPB, Alq3, DPVBL
  • fluorescent dopants examples include: coumarin dyes (coumarin 6, C-545T), quinacridone (DMQA), DCM series, and the like.
  • the phosphorescent dopant is a metal complex luminescent material based on Ir, Pt, Ru, Cu, such as: FIrpic,
  • the matrix material includes a metal complex material, an imidazole material, a phenanthroline derivative, etc., such as 8-hydroxyquinoline aluminum (Alq3), Liq, bis(2-mercapto-8-hydroxyquinoline) (p-phenyl group) Phenol) aluminum (Balq), 1, 3, 5-tris(N-phenyl-2-benzimidazole-2)benzene (TPBI), BCP, Bphen, 9, 10-di-(2-naphthyl) anthracene (ADN), TAZ, CBP, MCP, TCTA (4,4',4"-tris(carbazol-9-yl)triphenylamine), NPB, and the like.
  • TPBI 5-tris(N-phenyl-2-benzimidazole-2)benzene
  • TPBI 1, 3, 5-tris(N-phenyl-2-benzimidazole-2)benzene
  • BCP BCP
  • Bphen 9, 10-di-(2-naphthy
  • the insertion layer 105 has an electron blocking function.
  • the material of the interposer layer 105 may include at least one of the following materials: an aromatic diamine compound, a triphenylamine compound, an aromatic triamine compound, a biphenyldiamine derivative, a triarylamine polymer, a metal Complexes, and carbazole polymers.
  • the material of the insertion layer 105 may include: an organic material having electron blocking properties such as NPB, TCTA, ADN, TPD (triphenyldiamine), CuPc (yttrium copper), polyvinyl carbazole or a monomer thereof, or Inorganic materials with electronic barrier properties.
  • the lowest unoccupied Molecular Orbital (LUMO) of the intercalation layer 105 is higher than the LUMO of the luminescent layer 103, and the highest occupied orbit of the intercalation layer 105 (Highest Occupied) Molecular Orbital, HOMO) is equal to or lower than the HOMO of the light-emitting layer 103, and the electron mobility of the intercalation layer 105 is lower than the hole mobility.
  • LUMO Molecular Orbital
  • a technique of providing an interposer layer in the light-emitting layer can be used in a device for a top emission structure, such as a blue top emitting device, an organic polymer top emitting light emitting device, or the like.
  • the insertion layer is disposed in the light-emitting layer, which can reduce the influence of voltage on the recombination of electrons and holes in the light-emitting layer, increase the number of carrier recombination of electrons and holes in the light-emitting layer, and improve electrons and holes.
  • the composite ratio is used to improve the luminous efficiency of the luminescent layer, and at the same time, to prolong the service life of the electroluminescent device, and the color emitted by the electroluminescent device is more stable.
  • Figure 3 is a schematic view showing the structure of a second embodiment of the electroluminescent device of the present invention. As shown in Fig. 3, this embodiment has a similar structure to that of the first embodiment, and similar material selections for the substrate, the anode, the cathode, the light-emitting layer, and the interposer.
  • the light-emitting layer 103 includes two insertion layers 105, and the two insertion layers 105 divide the light-emitting layer 103 into three light-emitting sub-layers: a first light-emitting sub-layer 1031, a second light-emitting sub-layer 1032, and a third light-emitting sub-layer 1033.
  • the position of the interposer 105 may be defined by the thickness ratio of the first illuminating sub-layer 1031, the second illuminating sub-layer 1032, and the third illuminating sub-layer 1033.
  • the ratio of the thickness of each layer of the illuminating sub-layer to the thickness of the illuminating layer ranges from 1 to 99%, and the thickness of the first illuminating sub-layer 1031, the second illuminating sub-layer 1032 and the third illuminating sub-layer 1033
  • the sum of the ratios of the total thickness of the light-emitting layer is 1; for example, the first light-emitting sub-layer 1031, the second light-emitting sub-layer 1032, and the third light-emitting sub-layer 1033 may have the same thickness, for example.
  • the thickness of the two-layered interposer 105 ranges from 1 to 20 nm, for example, 3 and 5 nm, respectively.
  • three or more insertion layers 105 may be disposed in the light-emitting layer according to the mobility of electrons or holes in the light-emitting layer, increasing the number of electrons and holes in the light-emitting layer, and increasing electrons and holes.
  • the composite ratio is the ratio of the light-emitting layer according to the mobility of electrons or holes in the light-emitting layer, increasing the number of electrons and holes in the light-emitting layer, and increasing electrons and holes.
  • the undoped fluorescent material includes NPB, DPVBI;
  • the matrix material of the doped fluorescent material and the doped phosphorescent material may include a metal complex material, an imidazole material, a phenanthroline derivative, and the like.
  • the fluorescent dopant includes coumarin dye (C-545T), quinacridone (DMQA), etc.; the phosphorescent dopant is a metal complex luminescent material based on Ir, Pt, Ru, Cu, such as: FIrpic, Fir6, FirN4, FIrtaz, Ir(ppy)3, Ir(ppy)2(acac), PtOEP, (btp)2Iracac, Ir(piq)2(acac(MDQ)2Iracac, and the like.
  • the LUMO of the intercalation layer 105 is higher than the LUMO of the luminescent layer
  • the HOMO of the intercalation layer 105 is equal to or lower than the HOMO of the luminescent layer
  • the electron mobility of the intercalation layer 105 is lower than the hole mobility.
  • FIG 4 is a schematic view showing the structure of a third embodiment of the electroluminescent device of the present invention. As shown in Figure 4, this The electroluminescent device of the embodiment further includes an electron transport layer 106 and a hole transport layer 107 in addition to the substrate 101, the anode layer 102, the light emitting layer 103, and the cathode layer 104.
  • the light-emitting layer 103 includes an intervening layer 105; an electron transport layer 106 is disposed between the cathode layer 104 and the light-emitting layer 103 for transporting electrons; and a hole transport layer 107 is disposed between the anode layer 102 and the light-emitting layer 103 for transporting hole.
  • the electron transport layer 106 and the hole transport layer 107 can ensure that the injected electrons and holes recombine in the light-emitting layer 103, increase the recombination ratio of electrons and holes, and improve the light-emitting efficiency of the light-emitting layer.
  • the electroluminescent device of the present embodiment may further include an electron and exciton blocking layer 108 and a hole and exciton blocking layer 109.
  • the electron and exciton blocking layer 108 is located between the hole transport layer 107 and the light emitting layer 103
  • the hole and exciton blocking layer 109 is located between the electron transport layer 106 and the light emitting layer 103.
  • the electroluminescent device of the present embodiment may further include a hole injection layer 110 between the anode layer 102 and the hole transport layer 107, and the hole injection layer 110 may increase holes in the light-emitting layer 103.
  • the number of excitons increases the luminous efficiency of the light-emitting layer 103,
  • the material of the hole injection layer 110 may be a star-shaped triphenylamine compound, a metal complex, a P-doped organic layer or a polymer, for example: tri-[4-(5-phenyl-2) -thienyl)benzene]amine, 4,4,4,-tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA), 4, 4,, 4,,-tri-( 3- Nonylphenylanilino)triphenylamine (m-MTDATA), beryllium copper (CuPc) or Pedot: Pss, and the like.
  • the material of the hole transport layer 107 and the electron and exciton blocking layer 108 may be an aromatic diamine compound, a triphenylamine compound, an aromatic triamine compound, a biphenyldiamine derivative, a triarylamine polymer, or a metal complex.
  • carbazole polymers such as NPB, triphenyldiamine (TPD), 4,4',4"-tris(carbazol-9-yl)triphenylamine (TCTA), and polyvinylcarbazole or Monomer.
  • the material of the electron transport layer 106 and the hole and exciton blocking layer 109 may be a metal complex material, an oxadiazole electron transport material, an imidazole material, a phenanthroline derivative or a mixture of the above materials in a certain ratio.
  • the materials of the substrate, the anode, the cathode, the luminescent layer and the interposer may be selected and The same material selections of the first and second embodiments.
  • an electron transport layer and a hole transport layer are disposed on both sides of the light-emitting layer, and electrons and exciton blocking layers and holes are disposed.
  • An exciton blocking layer or the like to reduce the influence of voltage on the recombination of electrons and holes in the light-emitting layer, increase the number of carrier recombination of electrons and holes in the light-emitting layer, increase the recombination ratio of electrons and holes, and thereby improve the light-emitting layer.
  • the luminous efficiency at the same time, also prolongs the service life of the electroluminescent device, improves the color purity of the electroluminescent device, and makes the color emitted by the electroluminescent device more stable.
  • Another embodiment of the present invention also provides a display device comprising any of the electroluminescent devices described above.
  • the display device can be used, for example, for applications such as displays, televisions, and mobile phones.
  • Embodiments of the present invention insert one or more intervening layers with electron blocking in the luminescent layer, which is an ultra-thin layer. For example, it can be inserted in a different color luminescent layer in a white light device to improve the color change of the device with the voltage. It can also be inserted in the P-i-N device to prevent the recombination zone from moving to the boundary between the luminescent layer and the hole transport layer, reducing exciton loss.
  • inventions of the present invention also provide a method of fabricating an electroluminescent device to obtain an electroluminescent device as shown in Figures 2, 3 or 4.
  • the first embodiment of the method of producing an electroluminescent device of the present invention may comprise the following steps.
  • Step 501 preparing an anode layer on the substrate.
  • the transparent substrate 101 may be ultrasonically cleaned using acetone or deionized water, and then the substrate 101 is dried by dry nitrogen.
  • a transparent conductive film e.g., ITO
  • ITO transparent conductive film
  • Step 502 Prepare a light-emitting layer on the substrate on which the above steps are completed.
  • a light-emitting layer was prepared in a vacuum chamber having a degree of vacuum of 2 x 10 4 Pa.
  • a hole injection layer 110, a hole transport layer 107, and an electron and exciton blocking layer 108 are sequentially deposited on the anode layer 102, and then the first light emitting sub-layer 1031, the interposer layer 105, and the second light emitting sub-layer in the light emitting layer are further deposited.
  • 1032, a hole and exciton blocking layer 109 and an electron transport layer 106 are deposited on the second luminescent sub-layer 1032.
  • the insertion layer 105 is, for example, TCTA having a thickness of 4 nm, and the thicknesses of the first luminescent sub-layer 1031 and the second luminescent sub-layer 1032 are, for example, 4 nm and 6 nm, respectively; and the deposition speed of each of the above-mentioned base layers may be 0.08 nm/s.
  • the hole injection layer 110, the hole transport layer 107, and the electron and exciton blocking layer 108 are sequentially deposited in step 502, and the hole and exciton blocking layer 109 and electron transport are deposited in the second luminescent sublayer 1032.
  • the step of transporting layer 106 can be omitted.
  • Step 503 preparing a cathode layer on the substrate on which the above steps are completed.
  • the cathode layer 104 is prepared on the substrate on which the above steps are completed, and the cathode layer 104 may be made of a metal material such as lithium, magnesium, calcium, barium or aluminum, and the thickness thereof is, for example, 200 nn.
  • more than one layer of the intercalation layer 105 may be prepared in the luminescent layer to separate the luminescent layer into at least three luminescent sub-layers to reduce the effect of voltage on electron and hole recombination in the luminescent layer, and to increase electrons in the luminescent layer.
  • the number of carriers recombined with holes, etc. increases the composite ratio of electrons and holes.
  • one or more insertion layers are disposed in the light-emitting layer to balance carrier injection, thereby reducing the influence of voltage on the recombination of electrons and holes in the light-emitting layer, and increasing electrons and holes in the light-emitting layer.
  • the number of recombination increases the recombination ratio of electrons and holes, thereby improving the luminous efficiency of the luminescent layer, and at the same time prolonging the service life of the electroluminescent device, and the color purity of the device is also more stable.
  • a second embodiment of the method of fabricating an electroluminescent device of the present invention in conjunction with Figures 3 and 4, illustrates the following.
  • Step 601 Clean the substrate.
  • the transparent substrate 101 is ultrasonically cleaned using acetone or deionized water, and washed with dry nitrogen gas.
  • Step 602 depositing an anode layer on the substrate.
  • a transparent conductive film e.g., ITO
  • the sheet resistance of the ITO film is, for example, 25 ⁇ / ⁇ (ohms per square).
  • Step 603 Perform ultraviolet light processing on the substrate that completes the above steps.
  • the substrate on which the above steps are completed is subjected to ultraviolet light treatment to further clean the substrate 101 while improving its work function.
  • Step 604 sequentially preparing a hole injecting layer and a hole transporting layer on the substrate on which the above steps are completed.
  • the material of the hole injection layer 110 is Meo-TPD: F4TCNQ
  • the thickness is 100 nm
  • the material of the hole transport layer 107 is NPB
  • the thickness is 20
  • Step 605 sequentially preparing a first illuminating sub-layer, an interposer layer, a second illuminating sub-layer, an interposing layer, and a third illuminating sub-layer on the substrate on which the above steps are completed.
  • the material of the first illuminating sub-layer 1031 is MADN:DSA-Ph, the thickness is 10 nm, and the materials of the second illuminating sub-layer 1032 and the third illuminating sub-layer 1033 are both TPBI: (MDQ) 2Ir(acac), the thickness is lOnm; wherein, the material of the two layers of the interposer layer 105 on both sides of the second illuminating sub-layer 1032 is TCTA, and the thickness is 4 nm.
  • Step 606 sequentially preparing a hole and an exciton blocking layer and an electron transporting layer on the substrate on which the above steps are completed.
  • the hole and exciton blocking layer 109 is made of Bphen having a thickness of lOnm
  • the electron transporting layer 106 is made of Bphen:Li and having a thickness of 40 nm.
  • Step 607 sequentially preparing a cathode layer on the substrate on which the above steps are completed.
  • a layer of aluminum is deposited by vapor deposition on the substrate on which the above steps are performed, a deposition rate of 1.5 nm/s, and a thickness of 200 nm, to obtain a cathode layer 104, thereby obtaining an electroluminescent device.
  • the prepared electroluminescent device can be detected for current-voltage-luminance characteristics, and at the same time, its illuminating optical term can be detected, and its luminous efficiency can also be calculated.
  • the luminescent layer may also include only two luminescent sub-layers: a first illuminating sub-layer 1031 and a second illuminating sub-layer 1032.
  • the material of the first illuminating sub-layer 1031 is TPBI: Ir(ppy) 3 and the thickness is lOnm
  • the material of the second illuminating sub-layer 1032 is CBP: Ir(ppy) 3 , and the thickness is 20 nm
  • a layer of interposer layer 105 may be provided between TCTA and having a thickness of 4 nm.
  • one or more insertion layers are disposed in the light-emitting layer to balance carrier injection, thereby reducing the influence of voltage on the recombination of electrons and holes in the light-emitting layer, and increasing electrons and holes in the light-emitting layer.
  • the number of recombination increases the recombination ratio of electrons and holes, thereby improving the luminous efficiency of the luminescent layer, and at the same time prolonging the service life of the electroluminescent device, and the color purity of the device is also more stable.

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Abstract

一种电致发光器件、显示装置和电致发光器件制备方法，该电致发光器件包括基板（101）和依次设置在基板（101）上的阳极层（102）、发光层（103）和阴极层（104）。至少一层用于调整电子迁移率的插入层（105）设置在发光层（103）中。通过在发光层（103）中设置插入层（105），降低电压对发光层（103）中电子和空穴复合的影响，增加发光层（103）中电子和空穴等载流子复合的数量，提高电子和空穴的复合比例。

Description

电致发光器件、 显示装置和电致发光器件制备方法 技术领域
本发明的实施例涉及一种电致发光器件、 显示装置和电致发光器件制备 方法。 背景技术
有机发光二极管 (Organic Light-Emitting Diode, OLED)显示又称为有机电 致发光显示， 与传统的液晶显示（LCD )的显示方式不同。 OLED不需背光， 而是釆用非常薄的发光层和基板制作得到。 因此， OLED显示装置可以做得 更轻、 更薄， 可视角度更大， 并且能够显著节省电能。 所以， OLED显示装 置越来越多普及。
图 1为现有技术中电致发光器件的结构示意图。 如图 1所示， 现有技术 中电致发光器件包括基板 101和依次形成基板 101上的阳极层 102、 发光层 103和阴极层 104, 阳极层 102和阴极层 104分别连接到电源的正极和负极。 基板 101可以是玻璃基板、聚酯类基板或聚酞亚胺化合物基板等；阳极层 102 可以釆用无机金属氧化物， 如氧化铟锡（ITO ) 、 氧化辞 (ZnO)等， 也可以釆 用高功函数金属材料， 如金、 铜、 银、 铂等； 阴极层 104可以釆用低功函数 金属材料， 如锂、 镁、 钙、 锶、 铝和铟等； 发光层的材料可以包括荧光材料， 如 ΝΡΒ(Ν,Ν'-二苯基 -Ν,Ν'-二 (1-萘基) -1)、 DPVBI(4,4，-双 (2,2-二苯乙烯基)联苯) 等。
在现有技术中， 研究人员纷纷致力于充分利用三重态激子和单重态激子 以得到高效率有机电致发光器件。 但是， 由于载流子的传输不是理想的， 可 能会有载流子的非平衡注入，而且所注入的载流子也不能百分之百复合发光， 载流子复合形成的激子甚至可能发生猝灭， 这就使得实际效率要远低于最高 理论值。 同时， 当通过阳极层 102和阴极层 104在发光层 103上施加电压时， 空穴的迁移率要高于电子的迁移率。 但是随着电压的增加， 电子的迁移率增 长速度要超过空穴的迁移率的增加速度， 所以发光层中复合区的位置也会随 着电压的变化而变化，这使得器件的颜色会随着电压的改变而发生明显变化。 如果使用 P掺杂以及 N掺杂的器件，又使用有利于电子传输的基质来制作发 光层， 而且仅有单一复合区的话， 则发光区要更靠近于空穴传输层。 但是， 这也会使多余的激子向空穴传输层扩散， 造成无辐射衰减， 导致发光层 103 中的电子和空穴等载流子的数量不匹配， 降低了发光层 103的发光效率， 不 利于提高器件效率。 发明内容
本发明的实施例提供一种电致发光器件、 显示装置和电致发光器件制备 方法， 用于减弱电压变化对复合区的影响， 解决现有技术中发光层中的电子 和空穴的数量不匹配， 发光层的发光效率低， 颜色随电压改变的问题。
本发明的一个方面提供了一种电致发光器件， 包括基板和依次设置在所 述基板之上的阳极层、 发光层和阴极层， 所述阳极层和阴极层分别连接电源 的正极和负极。至少一层用于调整电子迁移率的插入层设置在所述发光层中。
对于该电致发光器件， 例如， 所述插入层用于阻挡电子传输， 以使发光 层中的电子和空穴的数量相匹配。
对于该电致发光器件， 例如， 所述插入层的厚度在 l-20nm之间。
对于该电致发光器件，例如，所述插入层的最低未占轨道 LUMO高于所 述发光层的 LUMO, 所述插入层的最高已占轨道 HOMO等于或低于所述发 光层的 HOMO, 所述插入层的电子迁移率低于其空穴迁移率。
对于该电致发光器件， 例如， 所述插入层的材料包括： 芳香族二胺类化 合物、 三苯胺化合物、 芳香族三胺类化合物、 联苯二胺衍生物、 三芳胺聚合 物\金属配合物和咔唑类聚合物中的至少一种。
对于该电致发光器件， 例如， 所述插入层设置在所述发光层中包括： 所 述发光层中设置有一层插入层， 所述插入层将所述发光层分隔为第一发光子 层和第二发光子层； 所述第一发光子层和所述第二发光子层的厚度占所述发 光层的厚度的比例范围在 1-99%之间。
对于该电致发光器件， 例如， 所述插入层设置在所述发光层中包括： 所 述发光层中设置有至少两层插入层， 所述至少两层插入层将所述发光层分隔 为至少三层发光子层， 各发光子层的厚度占所述发光层的厚度的比例范围在 1-99%之间。 对于该电致发光器件， 例如， 所述电致发光器件还包括电子传输层和空 穴传输层； 所述电子传输层位于所述阴极层和发光层之间， 所述空穴传输层 位于所述阳极层和发光层之间。
对于该电致发光器件， 例如， 所述电致发光器件还包括： 电子与激子阻 挡层、 空穴与激子阻挡层； 所述电子与激子阻挡层设置在所述空穴传输层和 发光层之间， 所述空穴与激子阻挡层设置在所述电子传输层和所述发光层之 间。
本发明的另一方面还提供了一种显示装置， 包括上述的任意一种电致发 光器件。
本发明的再一方面还提供了一种电致发光器件的制备方法， 包括在基板 上依次制备阳极层、 发光层以及阴极层， 所述发光层至少包括第一发光子层 和第二发光子层， 且所述发光层包括设置在其中用于调整电子迁移率的至少 一层插入层。 制备所述发光层和所述插入层包括： 制备所述第一发光层； 在 所述第一发光子层上沉积一层插入层；在所述插入层上制备所述第二发光层。
本发明的实施例提供的电致发光器件及其制备方法， 通过在发光层中设 置插入层， 以降低电压对发光层中电子和空穴复合的影响， 增加发光层中电 子和空穴等载流子复合的数量， 提高电子和空穴的复合比例， 从而提高发光 层的发光效率， 同时还有利于延长电致发光器件的使用寿命， 电致发光器件 发出的颜色也更加稳定。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为现有技术中电致发光器件的结构示意图；
图 2为本发明电致发光器件第一实施例的结构示意图；
图 3为本发明电致发光器件第二实施例的结构示意图；
图 4为本发明电致发光器件第三实施例的结构示意图。 具体实施方式 为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
除非另作定义， 此处使用的技术术语或者科学术语应当为本发明所属领 域内具有一般技能的人士所理解的通常意义。 本发明专利申请说明书以及权 利要求书中使用的 "第一" 、 "第二" 以及类似的词语并不表示任何顺序、 数量或者重要性，而只是用来区分不同的组成部分。同样， "一个 "或者 "一" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "包括" 或者 "包 含" 等类似的词语意指出现在 "包括" 或者 "包含" 前面的元件或者物件涵 盖出现在 "包括" 或者 "包含" 后面列举的元件或者物件及其等同， 并不排 除其他元件或者物件。 "连接" 或者 "相连" 等类似的词语并非限定于物理 的或者机械的连接， 而是可以包括电性的连接， 不管是直接的还是间接的。 "上" 、 "下" 、 "左" 、 "右" 等仅用于表示相对位置关系， 当被描述对 象的绝对位置改变后， 则该相对位置关系也可能相应地改变。
图 2为本发明电致发光器件第一实施例的结构示意图。 如图 2所示， 本 实施例电致发光器件依次包括基板 101和依次形成在基板 101之上的阳极层 102、 发光层 103和阴极层 104。 发光层 103包括第一发光子层 1031和第二 发光子层 1032,在第一发光子层 1031和第二发光子层 1032之间设置有调整 电子传输的插入层 105 , 以使发光层中的电子和空穴的数量相匹配。
可以以第一发光子层 1031和第二发光子层 1032的厚度比来定义插入层 105的位置。 可选地， 第一发光子层 1031和第二发光子层 1032每个的厚度 占发光层总厚度可以为 1-99%之间，第一发光子层 1031和第二发光子层 1032 的厚度所占发光层总厚度的比例之和为 1。 插入层 105 的厚度范围可以在 l-20nm之间。插入层 105例如位于发光层 103的中间，即第一发光子层 1031 和第二发光子层 1032的厚度相同； 又例如， 插入层 105例如位于发光层 103 的厚度 1/3的位置， 即第一发光子层 1031的厚度为第二发光子层 1032的厚 度的两倍或相反。 发光层可以为不掺杂的荧光材料发光层、 掺杂荧光材料的 有机材料层、 掺杂的磷光材料等有机发光层。 基板 101可以是玻璃基板、 聚酯类基板或聚酞亚胺化合物基板等。 阳极 层 102可以釆用无机金属氧化物， 如氧化铟锡（ITO ) 、 氧化辞 (ZnO)等， 也 可以釆用高功函数金属材料， 如金、 铜、 银、 铂等。 阴极层 104可以釆用低 功函数金属材料， 如锂、 镁、 钙、 锶、 铝和铟等。
示例性的， 发光层 103可以以下选择。
发光层 103可为不掺杂的荧光发光有机材料层， 例如 NPB, Alq3 ( 8-羟 基喹啉铝）， DPVBI(4,4，-双 (2,2-二苯乙烯基)联苯)等有传输能力的发光材料。
可替代地， 所述发光层 103可为掺杂的荧光发光有机材料层， 例如荧光 掺杂剂与基质材料。
可替代地， 所述发光层 103可为掺杂的磷光发光有机材料层（包括磷光 掺杂剂与基质材料） 。
有传输能力的发光材料的示例包括 NPB、 Alq3、 DPVBL
荧光掺杂剂的示例包括： 香豆素染料（coumarin 6、 C-545T ) 、 喹吖啶 酮 （ DMQA ) 、 DCM系列等。
磷光掺杂剂为基于 Ir、 Pt、 Ru、 Cu等金属配合物发光材料， 比如： FIrpic、
Fir6、 FirN4、 FIrtaz、 Ir(ppy)3、 Ir(ppy)2(acac)、 PtOEP、 (btp)2Iracac、 Ir(piq)2(acac)、 （MDQ)2Iracac等。
基质材料包括金属配合物材料、 咪唑类材料、 邻菲罗林衍生物等， 比如 8-羟基喹啉铝（ Alq3 )、Liq、双（ 2-曱基 -8-羟基喹啉） （对苯基苯酚）铝（ Balq )、 1 , 3 , 5-三（ N-苯基 -2-笨并咪唑 -2 )苯（ TPBI ) 、 BCP、 Bphen、 9, 10-二- ( 2-萘基） 蒽 （ADN ) 、 TAZ、 CBP、 MCP、 TCTA(4,4',4"-三 (咔唑 -9-基)三 苯胺)、 NPB等。
插入层 105具有电子阻挡功能。 示例性地， 插入层 105的材料可以包括 如下材料中的至少一种： 芳香族二胺类化合物、 三苯胺化合物、 芳香族三胺 类化合物、 联苯二胺衍生物、 三芳胺聚合物、 金属配合物、 以及咔唑类聚合 物。 例如， 插入层 105的材料可以包括： NPB、 TCTA、 ADN, TPD (三苯基 二胺)、 CuPc (酞箐铜)、聚乙烯咔唑或者其单体等有电子阻挡性能的有机材料， 或者有电子阻挡性能的无机材料等。
插入层 105的最低未占轨道 (Lowest Unoccupied Molecular Orbital, LUMO) 高于发光层 103 的 LUMO, 插入层 105 的最高已占轨道 (Highest Occupied Molecular Orbital, HOMO)等于或低于发光层 103的 HOMO, 插入层 105的 电子迁移率低于空穴迁移率。
进一步的， 本实施例中在发光层中设置一层插入层的技术， 可以用于顶 发射结构的器件中， 例如蓝光顶发射器件、 有机聚合物顶发射发光器件等。
本实施例中， 在发光层中设置插入层， 可以降低电压对发光层中电子和 空穴复合的影响， 增加发光层中电子和空穴等载流子复合的数量， 提高电子 和空穴的复合比例， 从而提高发光层的发光效率， 同时有利于延长电致发光 器件的使用寿命， 电致发光器件发出的颜色也更加稳定。
图 3为本发明电致发光器件第二实施例的结构示意图。 如图 3所示， 本 实施例与实施例一具有类似的结构、 相似的用于基板、 阳极、 阴极、 发光层 以及插入层的材料选择。 发光层 103中包括有两个插入层 105, 两个插入层 105将发光层 103分成三个发光子层：第一发光子层 1031、第二发光子层 1032 和第三发光子层 1033。 可以以第一发光子层 1031、 第二发光子层 1032和第 三发光子层 1033的厚度比来定义插入层 105的位置。可选地，每一层发光子 层的厚度占发光层厚度的比例范围在 1-99%之间， 第一发光子层 1031、 第二 发光子层 1032和第三发光子层 1033的厚度所占发光层总厚度的比例之和为 1 ; 例如， 第一发光子层 1031、 第二发光子层 1032和第三发光子层 1033例 如可以具有相同的厚度。 两层插入层 105的厚度范围在 l-20nm之间， 例如 可以分别为 3 和 5nm等。 在其他示例中， 还可以根据发光层中电子或空 穴的迁移率在发光层中设置三层或更多的插入层 105, 增加发光层中电子和 空穴复合的数量， 提高电子和空穴的复合比例。
在本实施例中， 无掺杂的荧光材料包括 NPB、 DPVBI; 掺杂的荧光材料 和掺杂的磷光材料的基质材料可以包括金属配合物材料、 咪唑类材料、 邻菲 罗林衍生物等， 荧光掺杂剂包括香豆素染料 (C-545T)、 喹吖啶酮 (DMQA)等； 磷光掺杂剂为基于 Ir、 Pt、 Ru、 Cu等金属配合物发光材料， 比如： FIrpic、 Fir6、 FirN4、 FIrtaz、 Ir(ppy)3、 Ir(ppy)2(acac)、 PtOEP、 (btp)2Iracac、 Ir(piq)2(acac （MDQ)2Iracac等。
同样，插入层 105的 LUMO高于发光层的 LUMO,插入层 105的 HOMO 等于或低于发光层的 HOMO, 插入层 105的电子迁移率低于空穴迁移率。
图 4为本发明电致发光器件第三实施例的结构示意图。 如图 4所示， 本 实施例电致发光器件出了基板 101、 阳极层 102、 发光层 103、 阴极层 104之 外还包括电子传输层 106和空穴传输层 107。
发光层 103包括一层插入层 105; 电子传输层 106位于阴极层 104和发 光层 103之间，用于传输电子；空穴传输层 107位于阳极层 102和发光层 103 之间， 用于传输空穴。 电子传输层 106和空穴传输层 107可以确保注入的电 子和空穴是在发光层 103中复合， 增加电子和空穴的复合比例， 提高发光层 的发光效率。
进一步的， 本实施例电致发光器件还可以包括电子与激子阻挡层 108和 空穴与激子阻挡层 109。 电子与激子阻挡层 108位于空穴传输层 107和发光 层 103之间，空穴与激子阻挡层 109位于电子传输层 106和发光层 103之间。 通过电子与激子阻挡层 108和空穴与激子阻挡层 109对载流子和激子的阻挡 作用， 可以增加发光层中的载流子和激子的数量， 提高发光层的发光效率。
进一步的， 本实施例电致发光器件还可以包括空穴注入层 110, 空穴注 入层 110位于阳极层 102和空穴传输层 107之间， 空穴注入层 110可以增加 发光层 103中空穴和激子的数量， 提高发光层 103的发光效率，
本实施例中， 空穴注入层 110的材料可以釆用星形的三苯胺化合物、 金 属配合物、 P掺杂的有机层或聚合物， 例如： 三 -[4- ( 5-苯基 -2-噻吩基）苯] 胺、 4,4，4，，-三 [2-萘基 (苯基)氨基]三苯胺（2-TNATA ) 、 4, 4，, 4，，-三- ( 3-曱 基苯基苯胺基）三苯胺（m- MTDATA ) 、 酞箐铜 ( CuPc )或 Pedot:Pss等。
空穴传输层 107和电子与激子阻挡层 108的材料可以釆用芳香族二胺类 化合物、 三苯胺化合物、 芳香族三胺类化合物、 联苯二胺衍生物、 三芳胺聚 合物、金属配合物以及咔唑类聚合物等，例如 NPB、三苯基二胺 (TPD)、 4,4',4"- 三 (咔唑 -9-基)三苯胺 (TCTA) 以及聚乙烯咔唑或者其单体。
电子传输层 106和空穴与激子阻挡层 109的材料可以釆用金属配合物材 料、 噁二唑类电子传输材料、 咪唑类材料、 邻菲罗林衍生物或上述材料以一 定比例的混合物等， 例如 8-羟基喹啉铝（Alq3 ) 、 8-羟基喹啉锂 ( Liq ) 、 8- 羟基喹啉镓、 双 [2-(2-羟基苯基 -1)-吡啶]铍、 2- ( 4-二苯基 ) -5- ( 4-叔丁苯基 ) -1 , 3, 4-噁二唑（PBD ) 、 1 , 3, 5-三（ N-苯基 -2-笨并咪唑 -2 )苯（TPBI ) 、 BCP、 以及 Bphen等。
本实施例中， 基板、 阳极、 阴极、 发光层以及插入层的材料可以选择与 第一、 第二实施例相同的材料选择。
本实施例中， 除了在发光层中设置一层或多层插入层之外， 还在发光层 的两侧设置电子传输层和空穴传输层， 以及设置电子与激子阻挡层和空穴与 激子阻挡层等， 以降低电压对发光层中电子和空穴复合的影响， 增加发光层 中电子和空穴等载流子复合的数量， 提高电子和空穴的复合比例， 从而提高 发光层的发光效率， 同时， 也延长电致发光器件的使用寿命， 改善电致发光 器件的发光颜色纯度， 使电致发光器件发出的颜色也更加稳定。
本发明的另一个实施例还提供了一种显示装置， 该显示装置包括上述的 任意一种电致发光器件。 该显示装置例如可以用于显示器、 电视、 手机等应 用。
本发明的实施例在发光层插入一个或多个有电子阻挡作用的插入层， 此 插入层为超薄层。 例如， 可以在白光器件中不同颜色发光层中插入， 改善器 件发光颜色随电压的改变。 也可以在 P-i-N器件中插入， 防止复合区移到发 光层与空穴传输层的边界， 减少激子损失。
本发明的其他实施例还提供了一种电致发光器件的制备方法， 以得到如 图 2、 3或 4所示的电致发光器件。本发明电致发光器件的制备方法第一实施 例可以包括如下步骤。
步骤 501、 在基板上制备阳极层。
在本步骤中， 可选用丙酮或去离子水对透明基板 101进行超声波清洗， 然后用干燥氮气吹干基板 101。 在基板 101 上沉积透明的导电薄膜（例如 ITO ) , 该导电薄膜即为阳极层 102, 然后进入步骤 502。
步骤 502、 在完成上述步骤的基板上制备发光层。
在本步骤中，在真空度为 2x l04Pa的真空室中制备发光层。在阳极层 102 上依次沉积空穴注入层 110、空穴传输层 107和电子与激子阻挡层 108,然后 再沉积发光层中的第一发光子层 1031、插入层 105和第二发光子层 1032,再 在第二发光子层 1032沉积空穴与激子阻挡层 109和电子传输层 106。插入层 105例如釆用厚度为 4nm的 TCTA,第一发光子层 1031和第二发光子层 1032 的厚度例如分别为 4nm和 6nm; 上述各有基层的沉积速度可为 0.08nm/s。
步骤 502中的依次沉积空穴注入层 110、 空穴传输层 107和电子与激子 阻挡层 108,以及在第二发光子层 1032沉积空穴与激子阻挡层 109和电子传 输层 106的步骤可以省去。
步骤 503、 在完成上述步骤的基板上制备阴极层。
在本步骤中， 在完成上述步骤的基板上制备阴极层 104, 阴极层 104可 以釆用锂、 镁、 钙、 锶或铝等金属材料， 其厚度例如为 200nn
例如， 可以在发光层中制备多于一层的插入层 105, 以将发光层分隔为 至少三层发光子层， 以降低电压对发光层中电子和空穴复合的影响， 增加发 光层中电子和空穴等载流子复合的数量， 提高电子和空穴的复合比例。
本实施例中， 通过在发光层中设置一层或多层插入层， 以平衡载流子注 入， 降低电压对发光层中电子和空穴复合的影响， 增加发光层中电子和空穴 等载流子复合的数量， 提高电子和空穴的复合比例， 从而提高发光层的发光 效率， 同时有利于延长电致发光器件的使用寿命， 器件的颜色的纯度也更加 稳定。
本发明电致发光器件的制备方法第二实施例， 结合图 3和图 4, 说明如 下。
步骤 601、 清洗基板。
在本步骤中， 选用丙酮或去离子水对透明基板 101进行超声波清洗， 清 洗后用干燥氮气吹干。
步骤 602、 在基板上沉积阳极层。
在本步骤中， 在基板 101上沉积透明的导电薄膜（例如 ITO ) , 该导电 薄膜即为阳极层 102。该 ITO薄膜的方块电阻例如为 25Ω/π(欧姆每个方块 )。
步骤 603、 对完成上述步骤的基板进行紫外光处理。
在本步骤中， 对完成上述步骤的基板进行紫外光处理， 以进一步清洁基 板 101 , 同时提高其功函数。
步骤 604、在完成上述步骤的基板上依次制备空穴注入层和空穴传输层。 在本步骤中， 例如， 空穴注入层 110的材料为 Meo-TPD:F4TCNQ, 厚度 为 lOOnm, 空穴传输层 107的材料为 NPB, 厚度为 20
步骤 605、 在完成上述步骤的基板上依次制备第一发光子层、 插入层、 第二发光子层、 插入层、 第三发光子层。
在本步骤中， 例如， 第一发光子层 1031的材料为 MADN:DSA-Ph, 厚度 为 10nm, 第二发光子层 1032 和第三发光子层 1033 的材料均为 TPBI: (MDQ)2Ir(acac), 厚度均为 lOnm; 其中， 第二发光子层 1032两侧的两层插 入层 105的材料均为 TCTA, 厚度均为 4nm。
步骤 606、 在完成上述步骤的基板上依次制备空穴与激子阻挡层和电子 传输层。
在本步骤中， 例如， 空穴与激子阻挡层 109釆用的材料为 Bphen, 厚度 为 lOnm, 电子传输层 106的材料为 Bphen:Li, 厚度为 40nm。
步骤 607、 在完成上述步骤的基板上依次制备阴极层。
在本步骤中， 例如， 在完成上述步骤的基板上釆用蒸镀的方式沉积一层 铝， 沉积速度为 1.5nm/s , 厚度为 200nm, 即得到阴极层 104, 从而得到电 致发光器件。
然后， 可以制备得到的电致发光器件进行电流-电压-亮度特性的检测， 同时还可以检测其发光光语， 也可以计算出其发光效率。
例如，发光层也可以只包括两层发光子层： 第一发光子层 1031和第二发 光子层 1032。例如，第一发光子层 1031的材料为 TPBI:Ir(ppy)3 ,厚度为 lOnm; 第二发光子层 1032的材料为 CBP:Ir(ppy)3 , 厚度为 20nm; 两层发光子层之 间设置一层插入层 105材料可以为 TCTA, 厚度为 4nm。
本实施例中， 通过在发光层中设置一层或多层插入层， 以平衡载流子注 入， 降低电压对发光层中电子和空穴复合的影响， 增加发光层中电子和空穴 等载流子复合的数量， 提高电子和空穴的复合比例， 从而提高发光层的发光 效率， 同时有利于延长电致发光器件的使用寿命， 器件的颜色的纯度也更加 稳定。
对于本领域内的普通技术人员而言， 在不脱离本发明的精神和实质的情 况下， 可以做出各种变型和改进， 这些变型和改进也应视为本发明的保护范 围。

Claims

权利要求书
1. 一种电致发光器件， 包括基板和依次设置在所述基板上的阳极层、发 光层和阴极层， 所述阳极层和阴极层分别连接电源的正极和负极，
其中， 至少一层用于调整电子迁移率的插入层， 设置在所述发光层中。
2.根据权利要求 1所述的电致发光器件， 其中， 所述插入层用于阻挡电 子传输， 以使发光层中的电子和空穴的数量相匹配。
3. 根据权利要求 1或 2所述的电致发光器件， 其中， 所述插入层的厚度 在 l-20nm之间。
4. 根据权利要求 1-3 任一所述的电致发光器件， 其中， 所述插入层的
LUMO高于所述发光层的 LUMO, 所述插入层的 HOMO等于或低于所述发 光层的 HOMO, 所述插入层的电子迁移率低于其空穴迁移率。
5. 根据权利要求 1-4任一所述的电致发光器件， 其中， 所述插入层的材 料包括：
芳香族二胺类化合物、 三苯胺化合物、 芳香族三胺类化合物、 联苯二胺 衍生物、 三芳胺聚合物、 金属配合物和咔唑类聚合物中的至少一种。
6. 根据权利要求 1-5任一所述的电致发光器件， 其中， 所述发光层中设 置有一层插入层， 所述插入层将所述发光层分隔为第一发光子层和第二发光 子层；
所述第一发光子层和所述第二发光子层的厚度占所述发光层的厚度的比 例范围在 1-99%之间。
7. 根据权利要求 1-5任一所述的电致发光器件， 其中， 所述发光层中设 置有至少两层插入层， 所述插入层将所述发光层分隔为至少三层发光子层， 各发光子层的厚度占所述发光层的厚度的比例范围在 1-99%之间。
8. 根据权利要求 1-7任一所述的电致发光器件， 还包括： 电子传输层和 空穴传输层；
所述电子传输层位于所述阴极层和发光层之间， 所述空穴传输层位于所 述阳极层和发光层之间。
9. 根据权利要求 8所述的电致发光器件， 还包括： 电子与激子阻挡层、 空穴与激子阻挡层； 所述电子与激子阻挡层设置在所述空穴传输层和发光层之间， 所述空穴 与激子阻挡层设置在所述电子传输层和所述发光层之间。
10. 一种显示装置， 包括权利要求 1-9任一所述的电致发光器件。
11、 一种电致发光器件的制备方法， 包括在基板上依次制备阳极层、 发 光层以及阴极层，所述发光层至少包括第一发光子层和第二发光子层，其中， 所述发光层还包括设置在其中用于调整电子迁移率的至少一层插入层， 且制 备所述发光层和插入层包括：
制备所述第一发光层；
在所述第一发光子层上沉积一层插入层；
在所述插入层上制备所述第二发光层。
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