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WO2013011372A8 - Method for separating a layer from a composite structure - Google Patents

Method for separating a layer from a composite structure Download PDF

Info

Publication number
WO2013011372A8
WO2013011372A8 PCT/IB2012/001406 IB2012001406W WO2013011372A8 WO 2013011372 A8 WO2013011372 A8 WO 2013011372A8 IB 2012001406 W IB2012001406 W IB 2012001406W WO 2013011372 A8 WO2013011372 A8 WO 2013011372A8
Authority
WO
WIPO (PCT)
Prior art keywords
layer
support substrate
separating
ray
composite structure
Prior art date
Application number
PCT/IB2012/001406
Other languages
French (fr)
Other versions
WO2013011372A1 (en
Inventor
Didier Landru
Original Assignee
Soitec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec filed Critical Soitec
Priority to US14/346,238 priority Critical patent/US10220603B2/en
Priority to KR1020147010321A priority patent/KR20140065449A/en
Priority to CN201280045524.1A priority patent/CN103814435B/en
Priority to SG11201400366YA priority patent/SG11201400366YA/en
Priority to DE112012003512.7T priority patent/DE112012003512T5/en
Publication of WO2013011372A1 publication Critical patent/WO2013011372A1/en
Publication of WO2013011372A8 publication Critical patent/WO2013011372A8/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00—Treatment by energy or chemical effects
    • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
    • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
    • Y10T156/1158—Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Filters (AREA)
  • Prostheses (AREA)
  • Folding Of Thin Sheet-Like Materials, Special Discharging Devices, And Others (AREA)

Abstract

The invention relates to a method for separating a layer (115) from a composite structure (125), the structure comprising a composite stack formed from at least a support substrate (105) which is partially transparent at a determined wavelength, the layer (115) to be separated and a separation layer (110) interposed between the support substrate and the layer to be separated, the method comprising irradiation of the separation layer (110) through the support substrate (105) by means of incident light ray (124a) at the determined wavelength in order to induce weakening or separation by exfoliation of the separation layer, the light ray being inclined so as to form an angle of incidence Θ such that θ>θmin, where θmin = sin -1((n1/no)sin(tan-1(S/2h))), n1 and n0 respectively being the refractive index of the support substrate and the refractive index of the external medium (130) in contact with the support substrate (105), from which the said ray comes, S being the width of the said ray and h being the thickness of the support substrate.
PCT/IB2012/001406 2011-07-20 2012-07-18 Method for separating a layer from a composite structure WO2013011372A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US14/346,238 US10220603B2 (en) 2011-09-20 2012-07-18 Method for separating a layer from a composite structure
KR1020147010321A KR20140065449A (en) 2011-09-20 2012-07-18 Method for separating a layer from a composite structure
CN201280045524.1A CN103814435B (en) 2011-07-20 2012-07-18 For the method making layer separate from composite construction
SG11201400366YA SG11201400366YA (en) 2011-09-20 2012-07-18 Method for separating a layer from a composite structure
DE112012003512.7T DE112012003512T5 (en) 2011-09-20 2012-07-18 Method of separating a layer from a composite structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1158331 2011-09-20
FR1158331A FR2980280B1 (en) 2011-09-20 2011-09-20 METHOD FOR SEPARATING A LAYER IN A COMPOSITE STRUCTURE

Publications (2)

Publication Number Publication Date
WO2013011372A1 WO2013011372A1 (en) 2013-01-24
WO2013011372A8 true WO2013011372A8 (en) 2014-04-24

Family

ID=46598874

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2012/001406 WO2013011372A1 (en) 2011-07-20 2012-07-18 Method for separating a layer from a composite structure

Country Status (8)

Country Link
US (1) US10220603B2 (en)
KR (1) KR20140065449A (en)
CN (1) CN103814435B (en)
DE (1) DE112012003512T5 (en)
FR (1) FR2980280B1 (en)
SG (1) SG11201400366YA (en)
TW (1) TWI594297B (en)
WO (1) WO2013011372A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2995447B1 (en) 2012-09-07 2014-09-05 Soitec Silicon On Insulator METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ACCORDING TO A CHOSEN INTERFACE
FR2995445B1 (en) 2012-09-07 2016-01-08 Soitec Silicon On Insulator METHOD OF MANUFACTURING A STRUCTURE FOR SUBSEQUENT SEPARATION
FR2995444B1 (en) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator METHOD FOR DETACHING A LAYER
KR102015400B1 (en) * 2012-11-29 2019-10-22 삼성디스플레이 주식회사 Apparatus for ablation of carrier substrate, method for ablation of carrier substrate and method for making display apparatus
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
WO2022085546A1 (en) * 2020-10-19 2022-04-28 日東電工株式会社 Separation method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
US6372608B1 (en) 1996-08-27 2002-04-16 Seiko Epson Corporation Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method
JPH1126733A (en) * 1997-07-03 1999-01-29 Seiko Epson Corp Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display device, and electronic equipment
JP4085459B2 (en) 1998-03-02 2008-05-14 セイコーエプソン株式会社 Manufacturing method of three-dimensional device
JP3962282B2 (en) * 2002-05-23 2007-08-22 松下電器産業株式会社 Manufacturing method of semiconductor device
JP4565804B2 (en) * 2002-06-03 2010-10-20 スリーエム イノベイティブ プロパティズ カンパニー Laminate including ground substrate, method for producing the same, method for producing ultrathin substrate using laminate, and apparatus therefor
US7507312B2 (en) * 2005-08-23 2009-03-24 The Boeing Company Using laser shock loads to debond structures
TWI410329B (en) * 2009-03-09 2013-10-01 Ind Tech Res Inst Apparatus for releasing a flexible device and method thereof
US8764026B2 (en) * 2009-04-16 2014-07-01 Suss Microtec Lithography, Gmbh Device for centering wafers
CN102652354B (en) * 2009-12-15 2015-02-18 索泰克公司 Process for recycling a substrate
US8679280B2 (en) * 2010-05-27 2014-03-25 International Business Machines Corporation Laser ablation of adhesive for integrated circuit fabrication

Also Published As

Publication number Publication date
CN103814435A (en) 2014-05-21
US20140326416A1 (en) 2014-11-06
CN103814435B (en) 2016-08-31
SG11201400366YA (en) 2014-09-26
FR2980280A1 (en) 2013-03-22
US10220603B2 (en) 2019-03-05
WO2013011372A1 (en) 2013-01-24
TWI594297B (en) 2017-08-01
KR20140065449A (en) 2014-05-29
TW201316379A (en) 2013-04-16
DE112012003512T5 (en) 2014-12-31
FR2980280B1 (en) 2013-10-11

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