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WO2012061988A1 - Enabling method of warm white light with high brightness and high color rendering property - Google Patents

Enabling method of warm white light with high brightness and high color rendering property Download PDF

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Publication number
WO2012061988A1
WO2012061988A1 PCT/CN2010/078633 CN2010078633W WO2012061988A1 WO 2012061988 A1 WO2012061988 A1 WO 2012061988A1 CN 2010078633 W CN2010078633 W CN 2010078633W WO 2012061988 A1 WO2012061988 A1 WO 2012061988A1
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Prior art keywords
excitation wavelength
white light
orange
red
light portion
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PCT/CN2010/078633
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French (fr)
Chinese (zh)
Inventor
薛信燊
邹德志
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深圳市红绿蓝光电科技有限公司
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Priority to CN2010800679309A priority Critical patent/CN102971869A/en
Priority to PCT/CN2010/078633 priority patent/WO2012061988A1/en
Publication of WO2012061988A1 publication Critical patent/WO2012061988A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to the field of semiconductor illumination, in particular to a method for realizing high brightness and high color rendering warm white light.
  • Semiconductor lighting has green environmental protection, long life, high efficiency, energy saving, harsh environment, simple structure, small size, light weight and fast response. Low operating voltage and good safety, it is known as the fourth generation of electric light source after incandescent, fluorescent and energy-saving lamps, or called the 21st century green light source.
  • the warm white light suitable for illumination on the market is mainly made of blue LED chip and red phosphor. Due to the limitation of the current phosphor production process, the luminous flux of the red phosphor is very low, so that the light effect of warm white light is very low.
  • the color rendering index can only be around 70 to 80, and it is difficult to meet the requirements of lighting products. Therefore, a red LED or a chip is proposed instead of the red phosphor, and a white light is combined with the white LED to realize high color rendering white light.
  • the red chip process the red light brightness is difficult to increase, so that the overall warm white light has a lower light efficiency, so it is necessary to further improve the high color rendering warm white light effect.
  • the technical problem to be solved by the invention is to provide a method for realizing high brightness and high color rendering warm white light to solve the problem that the current red light brightness is low and the high color rendering warm white light is not high.
  • the technical solution adopted to solve the technical problem of the present invention is: a method for realizing high brightness and high color rendering warm white light, which comprises the following steps:
  • a color LED or the white light portion and a red light portion having an excitation wavelength of 630 nm to 660 nm and an orange light portion having an excitation wavelength of 590 nm to 610 nm are three different light emitting regions of the same chip; electrically connecting the white light portion and the excitation wavelength The red light portion of 630 nm to 660 nm and the orange light portion having an excitation wavelength of 590 nm to 610 nm are then electrically connected to the power source to obtain high brightness and high color rendering warm white light.
  • the white light portion is provided with a first phosphor layer
  • the red light portion having an excitation wavelength of 630 nm to 660 nm and the orange portion having an excitation wavelength of 590 nm to 610 nm are provided with a second phosphor layer.
  • the phosphor concentration of the red phosphor portion having an excitation wavelength of 630 nm to 660 nm and the orange portion of the excitation wavelength of 590 nm to 610 nm is smaller than the phosphor concentration of the first phosphor layer of the white portion.
  • the phosphor concentration of the red phosphor portion having an excitation wavelength of 630 nm to 660 nm and the second phosphor layer of the orange light portion having an excitation wavelength of 590 nm to 610 nm is the first portion of the white light portion
  • the phosphor layer has a phosphor concentration of 10% to 90%.
  • the white light portion is formed by exciting a yellow or yellow-green phosphor layer by a blue light chip, and the red light portion having an excitation wavelength of 630 nm to 660 nm is red light having an excitation wavelength of 630 nm to 660 nm.
  • the blue chip has an excitation wavelength of 380 nm to 460 nm.
  • the white light portion emits a white light color temperature between 3500K and 10000K.
  • changes in the color temperature are achieved by adjusting the luminance ratio of the white light portion, the red light portion having an excitation wavelength of 630 nm to 660 nm, and the orange light portion having an excitation wavelength of 590 nm to 610 nm.
  • the method for realizing high brightness and high color rendering warm white light has the following beneficial effects:
  • the color rendering index is greater than 85, the light performance of warm white light reaches 100lm/w or more, which is at least 20% higher than that of the prior art products, and is more suitable for illumination.
  • the invention has the advantages of compact design and can be applied to the production of LEDs, LED modules, etc., which can effectively improve the reliability and consistency of the products, and simultaneously utilize mass production of machine equipment.
  • LEDs, LED modules and LED chips with different brightness and color temperature segments can be obtained, and different use effects can be obtained to meet the color requirements of different environments.
  • the diffuse reflection of the light is increased, and the red portion and the excitation wavelength of the excitation wavelength of 630-660 nm are increased. It is the light of the orange light part of 590-610nm, so as to achieve the purpose of improving light efficiency.
  • FIG. 1 is a cross-sectional view showing the structure of a first embodiment of a method for realizing high brightness and high color rendering warm white light according to the present invention
  • FIG. 2 is a cross-sectional view showing the structure of a second embodiment of a method for realizing high brightness and high color rendering warm white light according to the present invention
  • Fig. 3 is a cross-sectional view showing the structure of a third embodiment of a method for realizing high brightness and high color rendering warm white light according to the present invention.
  • the high brightness and high color rendering warm white light is realized by a high brightness and color rendering.
  • the brightness-high color rendering warm white LED lamp comprises a holder 100 having a holder cup 110, and a red chip 20 having an excitation wavelength of 630-660 nm and an excitation wavelength of 590 are fixedly attached to the edge of the holder cup 110 of the holder 100.
  • the orange chip 21 of 610 nm is fixedly connected with four blue chips 30 in the middle of the bracket cup 110 of the bracket 100, wherein the four blue chips 30 are arranged side by side.
  • the red light chip 20 having an excitation wavelength of 630-660 nm, the orange light chip 21 having an excitation wavelength of 590-610 nm, and the blue light chip 30 are connected to the driving circuit through the electrode lines, and the blue light chips 30 are coated with yellow or yellow-green fluorescence.
  • the powder layer 40 (first phosphor layer) is used to generate white light, and then a red light chip 20 having an excitation wavelength of 630-660 nm and an orange light chip 21 having an excitation wavelength of 590-610 nm are coated with a small concentration of yellow.
  • the yellow-green phosphor layer 50 increases the diffuse reflection of the red light having an excitation wavelength of 630-660 nm and the orange light having an excitation wavelength of 590-610 nm, thereby effectively improving the light efficiency of the LED.
  • the bracket cup 110 has an upper groove and a lower groove. The two grooves are stepped.
  • the red chip 20 having an excitation wavelength of 630-660 nm and the orange chip 21 having an excitation wavelength of 590-610 nm are disposed on the concave surface. In the slot, the four blue LED chips 30 are evenly disposed in the lower recess in the middle.
  • the red chip 20 having an excitation wavelength of 630-660 nm and the orange chip 21 having an excitation wavelength of 590-610 nm are disposed at a higher position than the positions of the four blue chips 30. Since the red chip 20 having an excitation wavelength of 630-660 nm and the orange chip 21 having an excitation wavelength of 590-610 nm are located at the edge of the holder cup 110, and the four blue chips 30 are evenly distributed in the center of the holder cup 110, It can effectively reduce the yellow aperture around the spot, make the spot even and the light output is the best.
  • the method for realizing the high brightness and high color rendering warm white light is realized by an LED chip.
  • the basic epitaxial structure of the white light portion is sequentially completed in the metal organic chemical vapor deposition wafer furnace (MOCVD) from bottom to top: substrate 1, buffer layer 2, N layer 3, quantum well layer 4, P layer 5, current a diffusion layer 6 and a yellow or yellow-green phosphor layer 9 formed on the upper surface of the current diffusion layer 6 by sputtering, adsorption or growth; and then, in the middle of the epitaxial structure of the white portion, the N layer from the white portion
  • the P layer 13, the quantum well layer 14, and the N layer 15 are sequentially grown by re-growth to form a red portion having an excitation wavelength of 630-660 nm, and the growth is sequentially performed from the N layer of the red portion.
  • the layer 16, the quantum well layer 17, and the N layer 18 form a yellow, yellow-green, red or orange phosphor layer 19 on the outside of the N layer 18 by sputtering, adsorption or growth, thereby forming an excitation wavelength of 590- An orange portion of 610 nm; then an N pole 8 is disposed on the N layer 18 of the orange portion having an excitation wavelength of 590-610 nm, and a P pole 7 is disposed on the current diffusion layer 6, and then the LED chip is The P and N poles are processed. Finally, the LED chip chip is diced, tested and sorted, and the desired LED chip capable of realizing high brightness and high color rendering warm white light can be obtained.
  • a high brightness and high color rendering warm white light is realized by an LED module.
  • the LED module includes a light board 30, and a plurality of high-brightness red LEDs with an excitation wavelength of 630-660 nm are fixed on the light board 30. 41.
  • three white LEDs 42 are evenly arranged in the center of the light board 30, five white LEDs 42 and two red LEDs 41 with an excitation wavelength of 630-660 nm and orange LEDs 43 with an excitation wavelength of 590-610 nm are evenly distributed among the three white LEDs.
  • the red LED having an excitation wavelength of 630-660 nm includes a red chip with an excitation wavelength of 630-660 nm and a yellow or yellow-green phosphor layer coated on the red chip with an excitation wavelength of 630-660 nm.
  • the red light chip with the excitation wavelength of 630-660 nm is excited to generate red light with an excitation wavelength of 630-660 nm, and the diffused reflection of the phosphor layer is used to increase the red light intensity of the excitation wavelength of 630-660 nm.
  • the orange LED having an excitation wavelength of 590-610 nm comprises an orange light chip with an excitation wavelength of 590-610 nm and a yellow or yellow-green phosphor layer coated on the orange light chip with an excitation wavelength of 590-610 nm, and the excitation wavelength is
  • the orange light chip of 590-610 nm is excited to generate orange light with excitation wavelength of 590-610 nm, and diffuse reflection of the phosphor layer to increase the brightness of orange light with an excitation wavelength of 590-610 nm.
  • red LED with excitation wavelength of 630-660nm 41, white LED 42 and the number of orange LEDs 43 having an excitation wavelength of 590-610 nm or the number of lighted thereby obtaining different brightnesses and different color temperatures.
  • the color temperature reaches 2700K.
  • Light up a red LED with excitation wavelength of 630-660nm 41, 8 white LEDs 42 and 3 orange LEDs with an excitation wavelength of 590-610 nm can achieve a color temperature of 4000K.
  • the arrangement and combination can achieve different lighting effects.
  • the invention provides a method for realizing high brightness and high color rendering warm white light, which has the following beneficial effects:
  • the color rendering index is greater than 85, the light performance of warm white light reaches 100lm/w or more, which is at least 20% higher than that of the prior art products, and is more suitable for illumination.
  • the invention has the advantages of compact design and can be applied to the production of LEDs, LED modules, etc., which can effectively improve the reliability and consistency of the products, and simultaneously utilize mass production of machine equipment.
  • LEDs, LED modules and LED chips with different brightness and color temperature segments can be obtained, and different use effects can be obtained to meet the color requirements of different environments.
  • the diffuse reflection of the light is increased, and the red portion and the excitation wavelength of the excitation wavelength of 630-660 nm are increased. It is the light of the orange light part of 590-610nm, so as to achieve the purpose of improving light efficiency.

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Abstract

The present invention refers to an enabling method of warm white light with high brightness and high color rendering property, which includes the following steps: providing a white light part, a red light part with an exciting wavelength of 630-660nm, and an orange light part with an exciting wavelength of 590-610nm, coating a first fluorescent powder layer on the white light part, and coating a second fluorescent powder layer on the red light part with an exciting wavelength of 630-660nm and the orange light part with an exciting wavelength of 590-610nm. The concentration of the fluorescent powder of the second fluorescent powder layer is lower than the concentration of the fluorescent powder of the first fluorescent powder layer. The white light part, the red light part with an exciting wavelength of 630-660nm, and the orange light part with an exciting wavelength of 590-610nm are three chips with different colors, or three LEDs with different colors, or three different light emitting areas of one chip. Electrically connecting the white light part, the red light part with an exciting wavelength of 630-660nm, and the orange light part with an exciting wavelength of 590-610nm, then electrically connecting the power supply, thus warm white light with high brightness and high color rendering property is obtained.

Description

一种高亮度高显色性暖白光的实现方法  Method for realizing high brightness and high color rendering warm white light 技术领域Technical field

本发明涉及半导体照明领域,尤其涉及一种高亮度高显色性暖白光的实现方法。 The invention relates to the field of semiconductor illumination, in particular to a method for realizing high brightness and high color rendering warm white light.

背景技术Background technique

半导体照明具有绿色环保、寿命超长、高效节能、抗恶劣环境、结构简单、体积小、重量轻、响应快、 工作电压低及安全性好的特点,因此被誉为继白炽灯、日光灯和节能灯之后的第四代照明电光源,或称为二十一世纪绿色光源。Semiconductor lighting has green environmental protection, long life, high efficiency, energy saving, harsh environment, simple structure, small size, light weight and fast response. Low operating voltage and good safety, it is known as the fourth generation of electric light source after incandescent, fluorescent and energy-saving lamps, or called the 21st century green light source.

目前,市场上的适用于照明的暖白光主要是用蓝光LED芯片加红色荧光粉做成,受目前荧光粉生产工艺的限制,红色荧光粉的光通量很低,使暖白光的光效很低,显色指数也只能在70到80左右,很难达到照明产品的要求。于是提出了红光LED或芯片代替红色荧光粉,与白光LED组合产生白光的方法,实现了高显色性白光。但受限于红光芯片的工艺,红光亮度较难提升,使得整体暖白光的光效较低,因此需进一步提升高显色性暖白光光效。At present, the warm white light suitable for illumination on the market is mainly made of blue LED chip and red phosphor. Due to the limitation of the current phosphor production process, the luminous flux of the red phosphor is very low, so that the light effect of warm white light is very low. The color rendering index can only be around 70 to 80, and it is difficult to meet the requirements of lighting products. Therefore, a red LED or a chip is proposed instead of the red phosphor, and a white light is combined with the white LED to realize high color rendering white light. However, due to the red chip process, the red light brightness is difficult to increase, so that the overall warm white light has a lower light efficiency, so it is necessary to further improve the high color rendering warm white light effect.

技术问题technical problem

发明要解决的技术问题在于提供一种实现高亮度高显色性暖白光的方法以解决目前红光亮度偏低,高显色性暖白光光效不高的问题。 The technical problem to be solved by the invention is to provide a method for realizing high brightness and high color rendering warm white light to solve the problem that the current red light brightness is low and the high color rendering warm white light is not high.

技术解决方案Technical solution

解决本发明的技术问题所采用的技术方案是:一种高亮度高显色性暖白光的实现方法,其包括如下步骤: The technical solution adopted to solve the technical problem of the present invention is: a method for realizing high brightness and high color rendering warm white light, which comprises the following steps:

提供白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分,所述白光部分包括一种颜色的芯片,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分包括另两种不同颜色的芯片,或者所述白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分是三种不同颜色的LED,或者所述白光部分和激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分是同一芯片的三种不同发光区域;电连接所述白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分,然后电连接电源,即可得到高亮度高显色性暖白光。Providing a white light portion, a red light portion having an excitation wavelength of 630 nm to 660 nm, and an orange light portion having an excitation wavelength of 590 nm to 610 nm, the white light portion including a chip of one color, the red light portion having an excitation wavelength of 630 nm to 660 nm and The orange light portion having an excitation wavelength of 590 nm to 610 nm includes two other different color chips, or the white light portion, the red light portion having an excitation wavelength of 630 nm to 660 nm, and the orange portion having an excitation wavelength of 590 nm to 610 nm are three different types. a color LED, or the white light portion and a red light portion having an excitation wavelength of 630 nm to 660 nm and an orange light portion having an excitation wavelength of 590 nm to 610 nm are three different light emitting regions of the same chip; electrically connecting the white light portion and the excitation wavelength The red light portion of 630 nm to 660 nm and the orange light portion having an excitation wavelength of 590 nm to 610 nm are then electrically connected to the power source to obtain high brightness and high color rendering warm white light.

作为本发明方法的进一步改进,所述白光部分设有第一荧光粉层,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分设有第二荧光粉层,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分的第二荧光粉层的荧光粉浓度比所述白光部分的第一荧光粉层的荧光粉浓度小。As a further improvement of the method of the present invention, the white light portion is provided with a first phosphor layer, and the red light portion having an excitation wavelength of 630 nm to 660 nm and the orange portion having an excitation wavelength of 590 nm to 610 nm are provided with a second phosphor layer. The phosphor concentration of the red phosphor portion having an excitation wavelength of 630 nm to 660 nm and the orange portion of the excitation wavelength of 590 nm to 610 nm is smaller than the phosphor concentration of the first phosphor layer of the white portion. .

作为本发明方法的进一步改进,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分上的第二荧光粉层的荧光粉浓度是所述白光部分上的第一荧光粉层的荧光粉浓度10%-90%。As a further improvement of the method of the present invention, the phosphor concentration of the red phosphor portion having an excitation wavelength of 630 nm to 660 nm and the second phosphor layer of the orange light portion having an excitation wavelength of 590 nm to 610 nm is the first portion of the white light portion The phosphor layer has a phosphor concentration of 10% to 90%.

作为本发明方法的进一步改进,所述白光部分是由蓝光芯片激发黄色或黄绿色荧光粉层形成的,所述激发波长为630nm-660nm的红光部分是由激发波长为630nm-660nm的红光芯片和涂覆在激发波长为630nm-660nm的红光芯片上的黄色或黄绿色荧光粉层形成的或者由激发波长为590nm-610nm的橙光芯片激发红色荧光粉层形成,所述激发波长为590nm-610nm的橙光部分是由激发波长为590nm-610nm的橙光芯片和涂覆在激发波长为590nm-610nm的橙光芯片上的橙色、黄色或者黄绿色荧光粉层形成。As a further improvement of the method of the present invention, the white light portion is formed by exciting a yellow or yellow-green phosphor layer by a blue light chip, and the red light portion having an excitation wavelength of 630 nm to 660 nm is red light having an excitation wavelength of 630 nm to 660 nm. Forming a yellow phosphor layer with a yellow or yellow-green phosphor layer coated on a red chip having an excitation wavelength of 630 nm to 660 nm or an orange light chip having an excitation wavelength of 590 nm to 610 nm, the excitation wavelength being The orange portion of 590 nm to 610 nm is formed of an orange light chip having an excitation wavelength of 590 nm to 610 nm and an orange, yellow or yellow-green phosphor layer coated on an orange light chip having an excitation wavelength of 590 nm to 610 nm.

作为本发明方法的进一步改进,所述蓝光芯片的激发波长为380nm-460nm。As a further improvement of the method of the present invention, the blue chip has an excitation wavelength of 380 nm to 460 nm.

作为本发明方法的进一步改进,所述白光部分发出的白光色温在3500K-10000K之间。As a further improvement of the method of the present invention, the white light portion emits a white light color temperature between 3500K and 10000K.

作为本发明方法的进一步改进,通过调整白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分的亮度比例以实现不同色温的变化。As a further improvement of the method of the present invention, changes in the color temperature are achieved by adjusting the luminance ratio of the white light portion, the red light portion having an excitation wavelength of 630 nm to 660 nm, and the orange light portion having an excitation wavelength of 590 nm to 610 nm.

有益效果Beneficial effect

相交于现有技术,本发明一种高亮度高显色性暖白光的实现方法,具有以下有益效果:In the prior art, the method for realizing high brightness and high color rendering warm white light has the following beneficial effects:

1、能有效提高暖白光的光效,在显色指数大于85情况下,暖白光的光效能达到100lm/w以上,比现有技术的产品光效提高至少20%以上,更适合照明。1. It can effectively improve the light effect of warm white light. When the color rendering index is greater than 85, the light performance of warm white light reaches 100lm/w or more, which is at least 20% higher than that of the prior art products, and is more suitable for illumination.

2、本发明设计精巧,可以应用在制作LED、LED模组等上,可以有效提高产品的可靠性、一致性,同时利用机器设备批量生产。2. The invention has the advantages of compact design and can be applied to the production of LEDs, LED modules, etc., which can effectively improve the reliability and consistency of the products, and simultaneously utilize mass production of machine equipment.

3、有效控制荧光粉的用量,不仅可增加产品的光效,还可有效节约产品成本。3, effective control of the amount of phosphors, not only can increase the light efficiency of the product, but also effectively save product costs.

4、通过调节红、白光亮度,获得不同亮度及色温段的LED、LED模组、LED芯片,获得不同的使用效果,满足不同环境的对颜色的要求。4. By adjusting the brightness of red and white light, LEDs, LED modules and LED chips with different brightness and color temperature segments can be obtained, and different use effects can be obtained to meet the color requirements of different environments.

5、通过在激发波长为630-660nm的红光和激发波长为590-610nm的橙光芯片上面涂覆荧光粉,增加光的漫反射,增加激发波长为630-660nm的红光部分和激发波长为590-610nm的橙光部分的出光,从而达到提升光效的目的。5. By coating the phosphor on the red light with an excitation wavelength of 630-660 nm and an orange light chip with an excitation wavelength of 590-610 nm, the diffuse reflection of the light is increased, and the red portion and the excitation wavelength of the excitation wavelength of 630-660 nm are increased. It is the light of the orange light part of 590-610nm, so as to achieve the purpose of improving light efficiency.

附图说明DRAWINGS

下面将结合附图及实施方式对本发明作进一步说明,附图中:The present invention will be further described below in conjunction with the accompanying drawings and embodiments, in which:

图1是本发明一种高亮度高显色性暖白光的实现方法的第一实施方式的结构的剖面图;1 is a cross-sectional view showing the structure of a first embodiment of a method for realizing high brightness and high color rendering warm white light according to the present invention;

图2是本发明一种高亮度高显色性暖白光的实现方法的第二实施方式的结构的剖面图;2 is a cross-sectional view showing the structure of a second embodiment of a method for realizing high brightness and high color rendering warm white light according to the present invention;

图3是本发明一种高亮度高显色性暖白光的实现方法的第三实施方式的结构的剖面图。Fig. 3 is a cross-sectional view showing the structure of a third embodiment of a method for realizing high brightness and high color rendering warm white light according to the present invention.

本发明的实施方式Embodiments of the invention

为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施方式,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施方式仅仅用以解释本发明,并不用于限定本发明。The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

如图1所示,在本发明的一种高亮度高显色性暖白光的实现方法的第一实施方式中,该高亮度高显色性暖白光的实现方法是通过一个亮度高显色性暖白光LED灯来实现的。该亮度高显色性暖白光LED灯包括具有支架杯110的支架100,在该支架100的支架杯110的边缘固定连接有一个激发波长为630-660nm的红光芯片20和一个激发波长为590-610nm的橙光芯片21,在该支架100的支架杯110的中间固定连接有四个蓝光芯片30,其中,这四个蓝光芯片30两两并排设置。该激发波长为630-660nm的红光芯片20、激发波长为590-610nm的橙光芯片21和蓝光芯片30通过电极线与驱动电路连接,在这些蓝光芯片30上均涂覆黄色或黄绿色荧光粉层40(第一荧光粉层)以产生白光,再在这些激发波长为630-660nm的红光芯片20和激发波长为590-610nm的橙光芯片21上涂覆一层浓度较小的黄色或黄绿色荧光粉层50(第二荧光粉层),增加激发波长为630-660nm的红光和激发波长为590-610nm的橙光的漫反射,使LED的光效有效提高。该支架杯110具有上凹槽和下凹槽,这两个凹槽呈阶梯状,该激发波长为630-660nm的红光芯片20和激发波长为590-610nm的橙光芯片21设置在上凹槽里,该四个蓝光LED芯片30均匀设置在中间的下凹槽里。该激发波长为630-660nm的红光芯片20和激发波长为590-610nm的橙光芯片21设置的位置高于该四个蓝光芯片30设置的位置。由于该激发波长为630-660nm的红光芯片20和激发波长为590-610nm的橙光芯片21位于该支架杯110的边缘,且四个蓝光芯片30均匀分布在该支架杯110的中心,这样可以有效减少光斑外围的黄光圈,使光斑均匀,出光效果最佳。As shown in FIG. 1 , in the first embodiment of the method for realizing high brightness and high color rendering warm white light of the present invention, the high brightness and high color rendering warm white light is realized by a high brightness and color rendering. Warm white LED lights to achieve. The brightness-high color rendering warm white LED lamp comprises a holder 100 having a holder cup 110, and a red chip 20 having an excitation wavelength of 630-660 nm and an excitation wavelength of 590 are fixedly attached to the edge of the holder cup 110 of the holder 100. The orange chip 21 of 610 nm is fixedly connected with four blue chips 30 in the middle of the bracket cup 110 of the bracket 100, wherein the four blue chips 30 are arranged side by side. The red light chip 20 having an excitation wavelength of 630-660 nm, the orange light chip 21 having an excitation wavelength of 590-610 nm, and the blue light chip 30 are connected to the driving circuit through the electrode lines, and the blue light chips 30 are coated with yellow or yellow-green fluorescence. The powder layer 40 (first phosphor layer) is used to generate white light, and then a red light chip 20 having an excitation wavelength of 630-660 nm and an orange light chip 21 having an excitation wavelength of 590-610 nm are coated with a small concentration of yellow. Or the yellow-green phosphor layer 50 (the second phosphor layer) increases the diffuse reflection of the red light having an excitation wavelength of 630-660 nm and the orange light having an excitation wavelength of 590-610 nm, thereby effectively improving the light efficiency of the LED. The bracket cup 110 has an upper groove and a lower groove. The two grooves are stepped. The red chip 20 having an excitation wavelength of 630-660 nm and the orange chip 21 having an excitation wavelength of 590-610 nm are disposed on the concave surface. In the slot, the four blue LED chips 30 are evenly disposed in the lower recess in the middle. The red chip 20 having an excitation wavelength of 630-660 nm and the orange chip 21 having an excitation wavelength of 590-610 nm are disposed at a higher position than the positions of the four blue chips 30. Since the red chip 20 having an excitation wavelength of 630-660 nm and the orange chip 21 having an excitation wavelength of 590-610 nm are located at the edge of the holder cup 110, and the four blue chips 30 are evenly distributed in the center of the holder cup 110, It can effectively reduce the yellow aperture around the spot, make the spot even and the light output is the best.

如图2所示,在本发明的一种高亮度高显色性暖白光的实现方法的第二实施方式中,该高亮度高显色性暖白光的实现方法是通过一LED芯片来实现的。先在金属有机化学气相沉积晶圆炉(MOCVD)中依次完成白光部分的基本外延结构从下到上依次:衬底1、缓冲层2、N层3、量子阱层4、P层5、电流扩散层6,以及在电流扩散层6的上表面采用溅射、吸附或生长的方式形成一层黄色或黄绿色荧光粉层9;然后在该白光部分的外延结构中间,从白光部分的N层开始采用再次生长的方式依次生长P层13、量子阱层14、N层15,从而形成激发波长为630-660nm的红光部分,从红光部分的N层开始采用再次生长的方式依次生长P层16、量子阱层17、N层18,在N层18的外面采用溅射、吸附或生长的方式形成一层黄色、黄绿色、红色或橙色荧光粉层19,从而形成激发波长为590-610nm的橙光部分;然后在激发波长为590-610nm的橙光部分的N层18上设置N极8,再在该电流扩散层6的上设置P极7,然后对LED芯片的 P和N极进行加工。最后对LED芯片毛片进行划片、测试和分选,就可以得到所需的能够实现高亮度高显色性暖白光的LED芯片。As shown in FIG. 2, in the second embodiment of the method for realizing high brightness and high color rendering warm white light of the present invention, the method for realizing the high brightness and high color rendering warm white light is realized by an LED chip. . First, the basic epitaxial structure of the white light portion is sequentially completed in the metal organic chemical vapor deposition wafer furnace (MOCVD) from bottom to top: substrate 1, buffer layer 2, N layer 3, quantum well layer 4, P layer 5, current a diffusion layer 6 and a yellow or yellow-green phosphor layer 9 formed on the upper surface of the current diffusion layer 6 by sputtering, adsorption or growth; and then, in the middle of the epitaxial structure of the white portion, the N layer from the white portion The P layer 13, the quantum well layer 14, and the N layer 15 are sequentially grown by re-growth to form a red portion having an excitation wavelength of 630-660 nm, and the growth is sequentially performed from the N layer of the red portion. The layer 16, the quantum well layer 17, and the N layer 18 form a yellow, yellow-green, red or orange phosphor layer 19 on the outside of the N layer 18 by sputtering, adsorption or growth, thereby forming an excitation wavelength of 590- An orange portion of 610 nm; then an N pole 8 is disposed on the N layer 18 of the orange portion having an excitation wavelength of 590-610 nm, and a P pole 7 is disposed on the current diffusion layer 6, and then the LED chip is The P and N poles are processed. Finally, the LED chip chip is diced, tested and sorted, and the desired LED chip capable of realizing high brightness and high color rendering warm white light can be obtained.

如图3所示,在本发明一种高亮度高显色性暖白光的第三实施方式中,该高亮度高显色性暖白光的实现方法是通过LED模组来实现的。该LED模组包括灯板30、在灯板30上固定数个高亮度的激发波长为630-660nm的红光LED 41、白光LED 42和激发波长为590-610nm的橙光LED43。其中,三个白光LED 42 均匀设置在灯板30中央,五个白光LED 42和两个激发波长为630-660nm的红光LED 41和激发波长为590-610nm的橙光LED43间隔均匀分布在三个白光LED 42的四周,该激发波长为630-660nm的红光LED包括激发波长为630-660nm的红光芯片和涂覆在该激发波长为630-660nm的红光芯片上的黄色或黄绿色荧光粉层,激发波长为630-660nm的红光芯片受激发产生激发波长为630-660nm的红光,经过荧光粉层的漫反射,达到增加激发波长为630-660nm的红光亮度的目的。该激发波长为590-610nm的橙光LED包括激发波长为590-610nm的橙光芯片和涂覆在该激发波长为590-610nm的橙光芯片上的黄色或黄绿色荧光粉层,激发波长为590-610nm的橙光芯片受激发产生激发波长为590-610nm的橙光,经过荧光粉层的漫反射,达到增加激发波长为590-610nm的橙光亮度的目的。通过调节激发波长为630-660nm的红光LED 41、白光LED 42和激发波长为590-610nm的橙光LED43的数量或者点亮颗数,从而得到不同的亮度和不同的色温。例如,点亮2颗激发波长为630-660nm的红光LED 41、8颗白光LED 42和1颗激发波长为590-610nm的橙光LED43,色温达到2700K。点亮1颗激发波长为630-660nm的红光LED 41、8颗白光LED 42和3颗激发波长为590-610nm的橙光LED43,可使色温达到4000K。以此类推,进行排列组合,可取得不同的照明效果。As shown in FIG. 3, in the third embodiment of the present invention, a high brightness and high color rendering warm white light is realized by an LED module. The LED module includes a light board 30, and a plurality of high-brightness red LEDs with an excitation wavelength of 630-660 nm are fixed on the light board 30. 41. A white LED 42 and an orange LED 43 having an excitation wavelength of 590-610 nm. Among them, three white LEDs 42 are evenly arranged in the center of the light board 30, five white LEDs 42 and two red LEDs 41 with an excitation wavelength of 630-660 nm and orange LEDs 43 with an excitation wavelength of 590-610 nm are evenly distributed among the three white LEDs. Around the 42nd, the red LED having an excitation wavelength of 630-660 nm includes a red chip with an excitation wavelength of 630-660 nm and a yellow or yellow-green phosphor layer coated on the red chip with an excitation wavelength of 630-660 nm. The red light chip with the excitation wavelength of 630-660 nm is excited to generate red light with an excitation wavelength of 630-660 nm, and the diffused reflection of the phosphor layer is used to increase the red light intensity of the excitation wavelength of 630-660 nm. The orange LED having an excitation wavelength of 590-610 nm comprises an orange light chip with an excitation wavelength of 590-610 nm and a yellow or yellow-green phosphor layer coated on the orange light chip with an excitation wavelength of 590-610 nm, and the excitation wavelength is The orange light chip of 590-610 nm is excited to generate orange light with excitation wavelength of 590-610 nm, and diffuse reflection of the phosphor layer to increase the brightness of orange light with an excitation wavelength of 590-610 nm. By adjusting the red LED with excitation wavelength of 630-660nm 41, white LED 42 and the number of orange LEDs 43 having an excitation wavelength of 590-610 nm or the number of lighted, thereby obtaining different brightnesses and different color temperatures. For example, illuminate two red LEDs with an excitation wavelength of 630-660 nm 41, 8 white LEDs 42 and 1 orange LED 43 with an excitation wavelength of 590-610 nm, the color temperature reaches 2700K. Light up a red LED with excitation wavelength of 630-660nm 41, 8 white LEDs 42 and 3 orange LEDs with an excitation wavelength of 590-610 nm can achieve a color temperature of 4000K. By analogy, the arrangement and combination can achieve different lighting effects.

本发明一种高亮度高显色性暖白光的实现方法,具有以下有益效果:The invention provides a method for realizing high brightness and high color rendering warm white light, which has the following beneficial effects:

1、能有效提高暖白光的光效,在显色指数大于85情况下,暖白光的光效能达到100lm/w以上,比现有技术的产品光效提高至少20%以上,更适合照明。1. It can effectively improve the light effect of warm white light. When the color rendering index is greater than 85, the light performance of warm white light reaches 100lm/w or more, which is at least 20% higher than that of the prior art products, and is more suitable for illumination.

2、本发明设计精巧,可以应用在制作LED、LED模组等上,可以有效提高产品的可靠性、一致性,同时利用机器设备批量生产。2. The invention has the advantages of compact design and can be applied to the production of LEDs, LED modules, etc., which can effectively improve the reliability and consistency of the products, and simultaneously utilize mass production of machine equipment.

3、有效控制荧光粉的用量,不仅可增加产品的光效,还可有效节约产品成本。3, effective control of the amount of phosphors, not only can increase the light efficiency of the product, but also effectively save product costs.

4、通过调节红、白光亮度,获得不同亮度及色温段的LED、LED模组、LED芯片,获得不同的使用效果,满足不同环境的对颜色的要求。4. By adjusting the brightness of red and white light, LEDs, LED modules and LED chips with different brightness and color temperature segments can be obtained, and different use effects can be obtained to meet the color requirements of different environments.

5、通过在激发波长为630-660nm的红光和激发波长为590-610nm的橙光芯片上面涂覆荧光粉,增加光的漫反射,增加激发波长为630-660nm的红光部分和激发波长为590-610nm的橙光部分的出光,从而达到提升光效的目的。5. By coating the phosphor on the red light with an excitation wavelength of 630-660 nm and an orange light chip with an excitation wavelength of 590-610 nm, the diffuse reflection of the light is increased, and the red portion and the excitation wavelength of the excitation wavelength of 630-660 nm are increased. It is the light of the orange light part of 590-610nm, so as to achieve the purpose of improving light efficiency.

以上所述仅为本发明的较佳实施方式而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. Within the scope.

Claims (7)

1、一种高亮度高显色性暖白光的实现方法,其包括如下步骤:  1. A method for realizing high brightness and high color rendering warm white light, comprising the steps of: 提供白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分,所述白光部分包括一种颜色的芯片,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分包括另两种不同颜色的芯片,或者所述白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分是三种不同颜色的LED,或者所述白光部分和激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分是同一芯片的三种不同发光区域;Providing a white light portion, a red light portion having an excitation wavelength of 630 nm to 660 nm, and an orange light portion having an excitation wavelength of 590 nm to 610 nm, the white light portion including a chip of one color, the red light portion having an excitation wavelength of 630 nm to 660 nm and The orange light portion having an excitation wavelength of 590 nm to 610 nm includes two other different color chips, or the white light portion, the red light portion having an excitation wavelength of 630 nm to 660 nm, and the orange portion having an excitation wavelength of 590 nm to 610 nm are three different types. a color LED, or the white light portion and a red light portion having an excitation wavelength of 630 nm to 660 nm and an orange light portion having an excitation wavelength of 590 nm to 610 nm are three different light emitting regions of the same chip; 电连接所述白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分,然后电连接电源,即可得到高亮度高显色性暖白光。The high-brightness and high-color-developing warm white light is obtained by electrically connecting the white light portion, the red light portion having an excitation wavelength of 630 nm to 660 nm, and the orange light portion having an excitation wavelength of 590 nm to 610 nm, and then electrically connecting the power source. 根据权利要求1所述的一种高亮度高显色性暖白光的实现方法,其特征在于,所述白光部分设有第一荧光粉层,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分设有第二荧光粉层,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分的第二荧光粉层的荧光粉浓度比所述白光部分的第一荧光粉层的荧光粉浓度小。The method for realizing high brightness and high color rendering warm white light according to claim 1, wherein the white light portion is provided with a first phosphor layer, and the excitation wavelength is a red light portion of 630 nm to 660 nm. The orange light portion having an excitation wavelength of 590 nm to 610 nm is provided with a second phosphor layer, the red phosphor portion having an excitation wavelength of 630 nm to 660 nm, and the phosphor of the second phosphor layer having an orange light portion having an excitation wavelength of 590 nm to 610 nm. The concentration is smaller than the phosphor concentration of the first phosphor layer of the white light portion. 根据权利要求2所述的一种高亮度高显色性暖白光的实现方法,其特征在于,所述激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分上的第二荧光粉层的荧光粉浓度是所述白光部分上的第一荧光粉层的荧光粉浓度10%-90%。The method for realizing high brightness and high color rendering warm white light according to claim 2, wherein the excitation light has a red light portion of 630 nm to 660 nm and an orange light portion having an excitation wavelength of 590 nm to 610 nm. The phosphor concentration of the second phosphor layer is 10% to 90% of the phosphor concentration of the first phosphor layer on the white light portion. 根据权利要求1所述的一种高亮度高显色性暖白光的实现方法,其特征在于,所述白光部分是由蓝光芯片激发黄色或黄绿色荧光粉层形成的,所述激发波长为630nm-660nm的红光部分是由激发波长为630nm-660nm的红光芯片和涂覆在激发波长为630nm-660nm的红光芯片上的黄色或黄绿色荧光粉层形成的或者由激发波长为590nm-610nm的橙光芯片激发红色荧光粉层形成,所述激发波长为590nm-610nm的橙光部分是由激发波长为590nm-610nm的橙光芯片和涂覆在激发波长为590nm-610nm的橙光芯片上的橙色、黄色或者黄绿色荧光粉层形成。The method for realizing high brightness and high color rendering warm white light according to claim 1, wherein the white light portion is formed by exciting a yellow or yellow green phosphor layer by a blue chip, and the excitation wavelength is 630 nm. The red portion of -660 nm is formed by a red chip having an excitation wavelength of 630 nm to 660 nm and a yellow or yellow-green phosphor layer coated on a red chip having an excitation wavelength of 630 nm to 660 nm or an excitation wavelength of 590 nm - The 610 nm orange light chip excites the formation of a red phosphor layer. The orange light portion with an excitation wavelength of 590 nm to 610 nm is an orange light chip with an excitation wavelength of 590 nm to 610 nm and an orange light chip coated with an excitation wavelength of 590 nm to 610 nm. An orange, yellow or yellow-green phosphor layer is formed thereon. 根据权利要求4所述的一种高亮度高显色性暖白光的实现方法,其特征在于,所述蓝光芯片的激发波长为380nm-460nm。The method for realizing high brightness and high color rendering warm white light according to claim 4, wherein the blue chip has an excitation wavelength of 380 nm to 460 nm. 根据权利要求1所述的一种高亮度高显色性暖白光的实现方法,其特征在于,所述白光部分发出的白光色温在3500K-10000K之间。The method for realizing high brightness and high color rendering warm white light according to claim 1, wherein the white light portion emits a white light color temperature between 3500K and 10000K. 根据权利要求1所述的一种高亮度高显色性暖白光的实现方法,其特征在于,通过调整白光部分、激发波长为630nm-660nm的红光部分和激发波长为590nm-610nm的橙光部分的亮度比例以实现不同色温的变化。The method for realizing high brightness and high color rendering warm white light according to claim 1, wherein the white light portion, the red light portion having an excitation wavelength of 630 nm to 660 nm, and the orange light having an excitation wavelength of 590 nm to 610 nm are adjusted. Part of the brightness ratio to achieve different color temperature changes.
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