WO2012035842A1

WO2012035842A1 - High-frequency power supply device, plasma processing device and method for producing thin film

Info

Publication number: WO2012035842A1
Application number: PCT/JP2011/064315
Authority: WO
Inventors: 知弘池田; 正和滝; 睦津田; 藤原　伸夫
Original assignee: 三菱電機株式会社
Priority date: 2010-09-15
Filing date: 2011-06-22
Publication date: 2012-03-22
Also published as: CN103098559B; JP5638617B2; JPWO2012035842A1; CN103098559A

Abstract

A high-frequency power supply device for supplying high-frequency power to parallel planar electrodes, the high-frequency power supply device comprising: high-frequency power sources (133a, 133b) for supplying high-frequency power to positions spaced apart from each other in the electrode; and a pulse generator for pulse-modulating the power supplied from the high-frequency power sources (133a, 133b) such that the power changes at a plurality of levels including a high level and a low level, the pulse generator instructing switching of levels to include a period (1) during which the supplied power from the high-frequency power source (133a) is at the high level and the supplied power from the high-frequency power source (133b) is at the low level, a period (2) during which the supplied power from the high-frequency power source (133b) is at the high level and the supplied power from the high-frequency power source (133a) is at the low level, and a period (3) during which the supplied power from each of the high-frequency power sources (133a, 133b) is at a level higher than the low level.

Description

High frequency power supply apparatus, plasma processing apparatus, and thin film manufacturing method

The present invention relates to a high frequency power supply apparatus, a plasma processing apparatus, and a thin film manufacturing method.

The plasma film forming apparatus is widely used as an apparatus for forming a thin film such as an amorphous silicon thin film or a microcrystalline silicon thin film on a substrate. Nowadays, for example, a plasma film forming apparatus capable of forming a thin film having a large area such as a thin film transistor used for a power generation layer of a thin film silicon solar cell or a flat display panel at a high speed at a time has been developed. In order to form a silicon thin film having a large area, it is common to use a parallel plate type plasma film forming apparatus.

The parallel plate type plasma film forming apparatus has a first electrode and a second electrode facing each other with a distance of several mm to several tens mm in a vacuum chamber. Usually, the electrode is installed in a horizontal plane, supplies high-frequency power to the first electrode, and the second electrode is grounded. When forming a silicon thin film, a film forming gas such as silane (SiH ₄ ) or hydrogen (H ₂ ) is supplied to a gap between electrodes serving as a discharge space through a large number of apertures formed in the first electrode. The gas supplied to the discharge space is turned into plasma by high frequency power. The film-forming gas is decomposed in plasma, becomes radicals and ions, enters the film-forming substrate, and forms a silicon film on the substrate. In general, the second electrode on the grounded side is used as a stage, and a deposition target substrate is placed thereon.

In recent years, VHF plasma generated using high frequency power in the VHF (Very High Frequency) band, which has a higher frequency than 13.56 MHz, which has been common in the past, is formed in order to meet the needs for improving film formation quality and film formation speed. It has been actively studied for use. Since VHF plasma has the characteristics of high density and low electron temperature, it is expected as a solution to the needs.

However, when using high-frequency power in the VHF band, the increase in the frequency of the high-frequency power causes a significant “wave” property of the high-frequency power, and the film formation characteristics become nonuniform within the electrode surface. there were. In other words, high-frequency power interferes within the electrode surface, and a standing wave is formed, resulting in a non-uniform electric field strength distribution, resulting in a non-uniform plasma density, and ultimately a non-uniform deposition rate and quality. It becomes uniform. The recent increase in size of the substrate has also become a factor that exacerbates this problem, which is a major issue in practical use.

In general, it is desirable that the electrode size is 1/10 or less of the wavelength λ of the high-frequency power used. This is because, as a guide, if the electrode size is λ / 10 or less, the in-plane variation of the electric field strength is generally within ± 10% even when a standing wave is formed. For example, in the case of 13.56 MHz, the electrode size is limited to a little over 2 m, and in the VHF band, for example, 60 MHz, the electrode size is limited to about 50 cm.

For film formation characteristics, for example, dispersion of film thickness distribution, it is practical to achieve reproducibility of about ± 5% for thin film transistors for flat panel displays, and to achieve reproducibility of about ± 10% in the solar cell field. It is an indicator of crystallization. In the conventional VHF plasma technology, for example, in the case of an amorphous silicon film deposition rate, a substrate area of about 50 cm × 50 cm is about ± 10 to 15%, which is barely satisfied by a small area substrate. When it reaches about 100 cm × 100 cm, there is a problem that about ± 20 to 40%, the above index cannot be cleared.

Since the formation of standing waves is caused by the fundamental physical phenomenon of wave interference, the fundamental solution is very difficult. Therefore, as a suboptimal measure, many of the prior arts allow the formation of standing waves themselves, and take a guideline that the generation of uniform plasma as a time average and thus film formation is achieved by controlling the distribution of the standing waves over time. ing.

For example, in Patent Document 1 below, at least four feeding points are provided on the electrode, and by simultaneously feeding from each feeding point, an antinode of a standing wave is formed at the center of the electrode, and the electric field distribution is nonuniform. Relaxed. As a result, a film thickness distribution of about ± 10% is obtained with respect to a 50 cm × 40 cm substrate close to the above limit using high frequency power of 60 MHz.

Further, Patent Document 2 below discloses a method of making the electric field distribution uniform in terms of time average by feeding power alternately from two opposite sides of the rectangular electrode, although the frequency is lower than VHF. ing. For example, when a high frequency power of 27.12 MHz is alternately supplied at a frequency of 100 kHz and a film is formed on a 2.2 m × 2.4 m substrate (corresponding to about 1 m square at 60 MHz), a film thickness distribution of ± 17% is obtained. It is supposed to be done.

Further, in Patent Document 3 below, the phase difference between the voltages of power supplied from two opposite sides of the rectangular electrode is temporally changed, and the first and second electrodes arranged at mutually opposing positions on the electrode are used. The distance between the second feeding points is set to an integral multiple of one-half of the wavelength of the power used, and the temporally separated pulse power output from two high-frequency power sources with variable phase and two outputs capable of pulse modulation Supply. Thus, the first standing wave whose antinode position matches the positions of the first and second feeding points, and the second standing wave whose node position matches the positions of the first and second feeding points. Waves are generated alternately in time.

Japanese Patent No. 3631903 JP 2006-216679 A Japanese Patent No. 4022670

As described above, film formation using high-frequency power in the VHF band capable of generating high-density plasma at a low electron temperature has been actively studied in recent years as a technology that can solve both film quality improvement and high-speed film formation. Has been done. However, both the increase in the area of the substrate and the increase in the power supply frequency cause the phenomenon that the electric field intensity distribution is not uniform due to the formation of the standing wave, which is the main cause of the deterioration of the film formation uniformity.

The formation of a standing wave is a basic physical phenomenon that occurs when two waves having the same frequency but different traveling directions cause interference. In order to simplify the explanation, it is shown as follows in one dimension. A wave If (generally called a traveling wave) that appears to move in the positive direction of the x-axis on the x-axis and a wave Ir (generally called a backward wave) that appears to move in the negative direction have an amplitude A and an angular frequency ω = Using 2πf and wave number k = 2π / λ, it can be expressed as the following equation (1).
If (x, t) = Asin (kx−ωt)
Ir (x, t) = Asin (kx + ωt) (1)
Here, if If (x, t) and Ir (x, t) are added together, the following equation (2) is obtained.
If + Ir = Asin (ωt−kx) + Asin (ωt + kx)
= 2Asin (kx) cos (ωt) (2)
That is, the wave amplitude has a distribution having a shape of sin (kx).

For example, at the point of x = nπ / k = nλ / 2 (n is an integer) where sin (kx) = 0, the amplitude becomes 0 regardless of time, and such a point is called a standing wave node. Conversely, the amplitude is maximum at x = (2n + 1) λ / 4 where sin (kx) = 1, and such a point is called a standing wave antinode.

In other words, in principle, it is possible to eliminate the standing wave if there is no backward wave. When a high frequency signal is actually propagated on a printed circuit board or the like, the formation of a standing wave is suppressed by precisely controlling the characteristic impedance of the propagation path so as not to generate a reflected wave, that is, a backward wave. However, in the plasma deposition system, it is very difficult to control the impedance of the power supply path due to the large number of moving parts, the securing of the pressure-resistant structure, the uncertainty of the impedance of the plasma itself, etc. In practice, it is very difficult to suppress the formation itself. Therefore, as a suboptimal measure, many of the prior arts allow the formation of standing waves themselves, and take a guideline that the generation of uniform plasma as a time average and thus film formation is achieved by controlling the distribution of the standing waves over time. ing.

In the technique described in Patent Document 1, it is said that uniformity can be achieved by simultaneously supplying power from a plurality of power supply points. Uniformity is still unresolved. Therefore, there is a problem that it is difficult to increase the size of the substrate to a metric size and to increase the power supply frequency. Actually, we tried to generate plasma by supplying power from 4 to 8 points to a 1.4m x 1.1m substrate. In either case, plasma was generated locally in the center of the electrode, and it was uniform. No plasma was obtained.

In the technique described in Patent Document 2, the power supply connected to the opposing positions on the electrode surface is alternately turned on / off so as not to interfere with each other. This is effective in a region where the frequency is relatively low and the change in plasma distribution can be approximated almost linearly. However, when the frequency is further increased, the formation of standing waves becomes more prominent, and as a result, the plasma distribution has a curved shape with nodes. Even in such a frequency region, the two standing waves can be made uniform by superimposing them, but the condition that the positions of the antinodes and the nodes just shift by π / 4 (for example, the electrode size is an odd multiple of λ / 4). Etc.). However, in an actual film formation or etching process, the plasma parameter changes depending on the process conditions, and λ also changes accordingly. Therefore, from a practical viewpoint, there is a problem that a margin for a difference due to process conditions becomes very small, and there is a problem that it is difficult to apply to the frequency region of the VHF band.

In the technique described in Patent Document 3, there are restrictions on the structure as in Patent Document 2, such as the arrangement of the feeding point depends on the wavelength of the high-frequency power, and a phase shifter for applying modulation is required. There is a problem that the system becomes complicated.

The present invention has been made in view of the above, and even when the frequency region of the VHF band is used, the apparatus configuration is not complicated, and the electric field distribution can be stably and uniformly in a large area. An object of the present invention is to obtain a high-frequency power supply apparatus, a plasma processing apparatus, and a thin film manufacturing method capable of forming the film.

In order to solve the above-described problems and achieve the object, the present invention provides a first parallel plate electrode including a first electrode and a second electrode arranged to face the first electrode. A high-frequency power supply device that supplies high-frequency power to one electrode, wherein the first high-frequency power source and the second high-frequency power source that respectively supply high-frequency power to positions apart from the first electrode, and the first The high-frequency power supply and the second high-frequency power supply are pulse-modulated so that the supply power of the second high-frequency power supply changes at a plurality of levels including a high level and a low level. And a first period in which the supply power of the second high frequency power supply is at a low level, a supply power of the second high frequency power supply is at a high level, and a supply power of the first high frequency power supply is Low level and And the third period in which both the supply power of the first high-frequency power source and the supply power of the second high-frequency power source are higher than the low level. And a power switching unit for instructing switching of the level of power supplied to the high-frequency power source and the second high-frequency power source.

According to the present invention, at least two types of standing waves formed in the first period and the second period and at least one standing wave formed in the third period are switched in time, so that the electrode size In addition, the in-plane uniform power intensity distribution can be formed without depending on the wavelength shortening effect by plasma. In addition, it is not necessary to match the positions of the antinodes and nodes of each standing wave, so that a complicated system using a phase shifter or the like is not required. Therefore, even when the frequency region of the VHF band is used, a uniform in-plane power intensity distribution can be formed over a large area region without complicating the device configuration.

FIG. 1 is a diagram schematically showing a configuration example of a plasma processing apparatus according to the present invention. FIG. 2 is a diagram illustrating an example of a power profile pulse-modulated by a high-frequency power source. FIG. 3 is a diagram showing an example of a power intensity distribution on the electrode when power is supplied according to the profile shown in FIG. FIG. 4A is a diagram illustrating a configuration example of a high-frequency power feeding unit in which a phase difference between high frequencies fed from two high-frequency power supplies is π so that I ₃ and I ₁ + I ₂ are in opposite phases. FIG. 4B is a diagram illustrating a configuration example of a high-frequency power feeding unit in which a phase difference between high frequencies fed from two high-frequency power supplies is π so that I ₃ and I ₁ + I ₂ are in opposite phases. FIG. 4C is a diagram illustrating a configuration example of a high-frequency power feeding unit in which a phase difference between high frequencies fed from two high-frequency power sources is π so that I ₃ and I ₁ + I ₂ are in opposite phases. FIG. 5 is a diagram illustrating an example of a power profile when modulation is performed using high / low. FIG. 6 is a diagram illustrating an example of a power profile in the case of supplying power of different magnitude depending on the period. FIG. 7A is a diagram illustrating an example of the arrangement of feeding points. FIG. 7B is a diagram illustrating an example of the arrangement of the feeding points. FIG. 7C is a diagram illustrating an example of the arrangement of feeding points. FIG. 8A is a schematic diagram of the power intensity distribution when the plane wave approximation is performed and the power intensity distribution when the wraparound occurs. FIG. 8B is a schematic diagram of the power intensity distribution when the plane wave approximation is performed and the power intensity distribution when the wraparound occurs. FIG. 9 is a diagram illustrating an example of a power profile when four feeding points are arranged. FIG. 10A is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied. FIG. 10B is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied. FIG. 10C is a diagram illustrating an example of grouping of feeding points to which the same power profile is applied. FIG. 11A is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed. FIG. 11B is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed. FIG. 11C is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed. FIG. 11-4 is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed. FIG. 11-5 is a diagram illustrating an example of a change in distribution when the grouping of feeding points is changed.

Hereinafter, embodiments of a high-frequency power supply device, a plasma processing apparatus, and a thin film manufacturing method according to the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

Embodiment 1 FIG.
FIG. 1 is a diagram schematically showing a configuration example of a first embodiment of a plasma processing apparatus according to the present invention. As shown in FIG. 1, the plasma processing apparatus of the present embodiment is a plasma processing apparatus that generates plasma and forms a thin film by a chemical vapor deposition method, and includes a vacuum chamber 100, a stage 110 having a moving mechanism, A shower plate 121 having a large number of gas supply ports, a pulse generator (power switching unit) 132, and high-frequency power sources (power sources) 133a and 133b capable of performing pulse modulation are provided.

The vacuum chamber 100 is connected to the flange 101 and is hermetically sealed with the insulating

spacers

122a and 122b to separate the inside from the atmosphere. The insulating

spacers

122a and 122b fix the electrode block 120. These structures constitute a decompression vessel including a stage 110 and a shower plate 121 inside, and a space between the stage 110 and the shower plate 121 is a plasma generation region 113 in which high-frequency plasma is generated. Above the electrode block 120 is an atmospheric pressure region.

Furthermore, the vacuum chamber 100 has an exhaust port 102 and a gate valve 103. The inside of the decompression vessel is evacuated from an exhaust port 102 provided in the vacuum chamber 100 by a vacuum pump (not shown). The vacuum chamber 100 is usually made of a metal such as an aluminum alloy and has good electrical conductivity. The stage 110 is supported by a support 111, and the substrate to be processed 112 is placed on the stage 110. The column 111 is connected to a drive mechanism (not shown), and the stage 110 can be moved up and down by changing the height of the column 111 using this drive mechanism.

Further, a plasma generation gas introduction pipe is provided from the electrode block 120 through the shield box 124 and has a film forming gas supply port 123 connected to an external gas supply facility. A film forming gas (plasma generating gas) is supplied from a gas supply facility via a film forming gas supply port 123 and supplied from the shower plate 121 to the plasma generating region 113.

The electrode block 120 supports the shower plate 121, is electrically connected to the shower plate 121, and is connected to the power feeding bars 135a and 135b. The electrode block 120 is joined to the insulating spacer 122 and further insulated from the flange 101 via the insulating spacer 122. A shield box 124 surrounding the electrode block 120 is provided above the electrode block 120, and the shield box 124 is insulated from the power feeding bars 135a and 135b by insulating

spacers

136a and 136b, respectively.

A gate valve 103 is provided in the vacuum chamber 100, and the substrate 112 to be processed is transferred onto the stage 110 through the gate valve 103. With the substrate to be processed 112 mounted on the stage 110, the substrate to be processed 112 approaches the shower plate 121 by raising the support 111 and the stage 110. After the distance between the stage 110 and the shower plate 121 is set to a desired value, high frequency power is subsequently supplied to the shower plate 121 via the electrode block 120 to generate plasma. In this embodiment, the shower plate 121 serves as an electrode (first electrode) to which high-frequency power is supplied, and the stage 110 serves as an electrode (second electrode) that is grounded. The shower plate 121 and the stage 110 are parallel flat plates. Configure the electrode.

After the plasma processing such as film formation and etching on the substrate 112 to be processed is completed, the support 111 and the stage 110 are lowered and moved away from the shower plate 121, and the substrate 112 passes through the gate valve 103 and is on the stage 110. From the vacuum chamber 100 to the outside.

In order to form a silicon thin film on the substrate 112 to be processed, for example, monosilane (SiH ₄ ) gas is used as a silicon source, hydrogen (H ₂ ) gas is used as a carrier gas, and a mixture of these gases is used for plasma generation. Used as membrane gas. The film forming gas is supplied into the electrode block 120 through the gas film forming gas supply port 123, and flows into the plasma generation region 113 on the opposing stage 110 through a large number of apertures formed in the shower plate 121. When high frequency power is supplied to the electrode block 120, the film forming gas in the plasma generation region 113 is decomposed by the high frequency power to generate high frequency plasma. In this process, active species such as SiH ₃ , SiH ₂ , SiH, Si, and H are generated, and these active species enter the substrate to be processed 112, and amorphous or microcrystalline silicon is formed on the surface of the substrate to be processed 112. Form. As a result of continuing the high-frequency plasma for a predetermined time, an amorphous or microcrystalline silicon thin film is formed on the substrate 112 to be processed.

Next, the high-frequency power supply unit (high-frequency power supply device) of the present embodiment will be described in detail. The high-frequency power feeding unit of the present embodiment includes a high-frequency oscillator 130, a duplexer 131, a pulse generator 132, high-

frequency switches

140a and 140b, high-

frequency amplifiers

141a and 141b, and

isolators

142a and 142b illustrated in FIG. ,

Matching units

134a and 134b and

power supply bars

135a and 135b. The high frequency switch 140a, the high frequency amplifier 141a, and the isolator 142a constitute a high frequency power source 133a, and the high frequency switch 140b, the high frequency amplifier 141b, and the isolator 142b constitute a high frequency power source 133b. It is assumed that the VHF band is selected as the frequency supplied by the high-frequency power supply unit of this embodiment in order to realize high-speed film formation. Note that although a case where the VHF band is used is described in this embodiment mode, the power supply frequency is not limited to the VHF band.

In order to supply high-frequency power in the VHF band to a large-area electrode surface, a method of feeding power from a plurality of remote locations is preferable in order to reduce the influence of standing waves. In general, the electrodes have a symmetrical shape such as rectangle, square, circle, etc., such as point symmetry and line symmetry, and the power feeding location is near the periphery of the electrodes, and multiple power feeding locations are located symmetrically away from the center line or center point. It should be arranged. The number of power feeding locations is selected depending on the size and structure of the device. In FIG. 1, two high frequency power sources (high

frequency power sources

133a and 133b) are arranged facing each other on the short side in the electrode surface, and power is fed from two locations. A configuration example is shown. The number of power feeding points is not limited to two, and may be any number depending on the size and structure of the device.

In order to synchronize the high-

frequency power supplies

133a and 133b, the low-power high-frequency signal generated using the high-frequency oscillator 130 is divided into two systems using the branching filter 131, and the divided high-frequency signals are respectively connected to the high-

frequency switches

140a and 140a, The signal is input to the high-

frequency amplifiers

141a and 141b through 140b. The high frequency switches 140 a and 140 b are connected to the pulse generator 132 and can electrically switch on / off of the high frequency signal according to the output signal of the pulse generator 132. In this way, the high-

frequency power sources

133a and 133b perform pulse modulation for controlling the magnitude of power supplied by the on-off ratio (duty ratio) of the high-frequency signal.

The

high frequency amplifiers

141a and 141b amplify the input high frequency signals and output the amplified signals through the

isolators

142a and 142b, respectively. The configuration of the high-

frequency power sources

133a and 133b is not limited to the configuration shown in FIG. 1, and any configuration may be used as long as the power source can pulse-modulate a high-frequency signal.

The electric power (high-frequency signal) output from the

isolators

142a and 142b is transmitted via a coaxial cable feed line and supplied to the feed bars 135a and 135b through the

matching units

134a and 134b, respectively. Usually, when modulation is performed at a high speed of several kHz or more, the matching

units

134a and 134b cannot follow the fluctuation of the load, and the reflected power is often high particularly immediately after on / off. For this reason,

isolators

142 a and 142 b are arranged in the high-frequency power supply 133 so that the reflected power does not return to the high-frequency amplifier 141. The

isolators

142a and 142b are usually composed of a circulator and a dummy load in many cases, but the present invention is not limited to this, and any configuration may be used.

The power feeding bars 135a and 135b have a role of transmitting power (current) transmitted from the matching

units

134a and 134b to the electrode block 120. The

power supply bars

135a and 135b are made of a material having high conductivity such as copper or aluminum, and are fixed to the electrode block 120 with screws or the like. The current supplied from the power supply bars 135 a and 135 b flows in a very shallow portion near the surface of the electrode block 120 due to the skin effect, and is supplied to the surface portion of the shower plate 121.

The outer conductor of the coaxial cable that becomes the ground potential of the high-

frequency power supplies

133a and 133b is connected to the casing of the matching unit 134 or the shield box 124 in the vicinity thereof. The shield box 124, the vacuum chamber 100, and the flange 101 are all connected to the ground side of the high-

frequency power sources

133a and 133b to prevent the occurrence of electric shock or radiation noise. The stage 110 is connected to the vacuum chamber 100 and grounded.

In general, in high frequency discharge, since the ground impedance of the stage 110 greatly affects the uniformity and stability of the plasma, an appropriate grounding mechanism such as bypassing the stage 110 and the inner wall of the chamber using a flexible plate is used. It is necessary to keep the ground impedance low using However, in the plasma processing apparatus according to the present embodiment, since the uniformity and stability of plasma can be increased regardless of the magnitude of the ground impedance, there is no restriction on the ground mechanism. For this reason, the grounding mechanism is omitted here for simplicity.

Next, the pulse power supply method of this embodiment will be described. FIG. 2 is a diagram illustrating an example of a power profile of power that is pulse-modulated by the high-

frequency power sources

133a and 133b according to the present embodiment. FIG. 3 is a diagram illustrating an example of a power intensity distribution on the electrode when power is supplied according to the power profile illustrated in FIG. With reference to FIG. 2 and FIG. 3, the formation of a standing wave and the time evolution at the time of pulse feeding according to the present embodiment will be described. In the following, an outline will be described in one dimension for simplicity. Note that, in FIG. 3, high-frequency power having the same phase (zero phase difference) is supplied from the high-

frequency power sources

133 a and 133 b with the left end of the relative position 0 and the right end of 1 as the power supply locations of the high-

frequency power sources

133 a and 133 b, respectively. Is shown.

First, as shown in FIG. 2, in this embodiment, one period of the high-frequency signal generated by the high-frequency oscillator 130 is divided into three periods (1), (2), and (3). In the period indicated by (1), the high-frequency power supply 133a is on and the high-frequency power supply 133b is off. In the period indicated by (2), the high frequency power supply 133a is turned off and the high frequency power supply 133b is turned on. In the period indicated by (3), both the high frequency power supply 133a and the high frequency power supply 133b are on.

3 shows the power intensity distribution when only the high-frequency power supply 133a is turned on, the distribution W2 shows the power intensity distribution when only the high-frequency power supply 133b is turned on, and the distribution W3 is a high-frequency power supply. The power intensity distribution when both

power supplies

133a and 133b are turned on is shown. The distribution W4 indicates a distribution obtained by superimposing the distribution W1 and the distribution W2, and the distribution W5 indicates a distribution obtained by superimposing the distribution W1, the distribution W2, and the distribution W3.

Here, it is assumed that the direction connecting the power supply bar 135a and the power supply bar 135b in the electrode plane (on the electrode block 120) is the x axis, and the power supply bar 135a is located at x = 0. If the voltage waveform of the high frequency signal generated by the high frequency power supply 133a is V1 (x, t), V1 (x, t) can be expressed by the following equation (3).
V1 (x, t) = Asin (kx−ωt) (3)
A is the amplitude, k is the wave number, and ω is the angular frequency.

When the electrode length (distance between the power supply bar 135a and the power supply bar 135b) is L and the reflectance at the opposite end is γ, the voltage distribution V (x, t) on the electrode is expressed by the following equation (4 ).
V (x, t) = V1 + Vr
= Asin (kx−ωt) + Aγsin {k (2L−x) −ωt} (4)

Actually, since γ is generally close to 1, when γ = 1, the following equation (5) is obtained.
V (x, t) = 2A cos {k (x−L)} sin (kL−ωt) (5)

Assuming that the power intensity distribution is I ₁ , I ₁ is proportional to the square of the amplitude of V (x, t), and therefore, the following equation (6) is obtained.
I ₁ ∝V (x, t) ²
= 4A ² cos ² {k (x−L)}
= 2A ² [cos {2k (x−L)} + 1] (6)

Therefore, as can be seen from the above equation (6), when only the high-frequency power source 133a is turned on (period (1) in FIG. 2), I ₁ is the feeding point as shown in the distribution W1 in FIG. Is a standing wave distribution having an antinode at x = L on the opposite side.

The period (2) in FIG. 2 is a period in which only the high frequency power supply 133b is turned on. When the position of the power supply bar 135b is x = L, and the voltage waveform of the high frequency signal generated by the high frequency power supply 133b is V2 (x, t), V2 (x, t) can be expressed by the following equation (7). it can.
V2 = Asin {k (Lx) −ωt} (7)
At this time, V (x, t) can be expressed by the following equation (8).
V (x, t) = 2A cos (kx) sin (kL-ωt) (8)
When the power intensity distribution is I ₂ , the following formula (9) is established.
I ₂ ∝2A ² {cos (2kx) +1} (9)

Therefore, as shown in the distribution W2 in FIG. 3, I ₂ is a standing wave distribution having an antinode at x = 0 opposite to the feeding point.

A period (3) in FIG. 2 is a period in which both the high-

frequency power sources

133a and 133b are turned on. At this time, if the amplitude and phase changes caused by multiple reflection at the electrode end are β and φ, respectively, and the power intensity distribution is I ₃ , the following equations (10) and (11) are established, and I ₃ is shown in FIG. As shown in the distribution W3, the standing wave distribution has an antinode at x = L / 2 in the center of the electrode.
V = Aβsin (kx−ωt−φ) + Aβsin {k (Lx) −ωt−φ}
= 2Aβcos (kx−kL / 2) sin (kL / 2−ωt−φ) (10)
I ₃ ∝2A ² β ² [cos {2k (x−L / 2)} + 1] (11)

Therefore, when I ₁ and I ₂ are overlapped, the following equation (12) is obtained.
I ₁ + I ₂ ∝2A ² [cos {2k (x−L)} + cos (2kx) +2]
= 4A ² [cos (kL) cos {2k (x−L / 2)} + 1] (12)

According to the formula (11) and the formula (12), I ₁ + I ₂ is distributed in phase with I ₃ (cos (kL) ≧ 0) or reversed phase (cos (kL) <0) depending on the value of L. . Therefore, when the period for forming each standing wave is set so that the ratio α of I ₁ + I ₂ and I ₃ satisfies the following expression (13) under the condition of reverse phase, the sine wave component cancels out. Fit. The power intensity distribution I _av seen as a time average when set in this way can be expressed by the following equation (14), and a uniform power intensity distribution having no distribution on the electrode can be obtained.
α = (I ₁ + I ₂ ) / I ₃ = −2 cos (kL) / β ² (13)
I _av ∝2A ² (2 + αβ ² ) (14)

Therefore, the period for forming each standing wave is set so that the ratio α of I ₁ + I ₂ and I ₃ satisfies the above-described equation (13) under the condition of reverse phase, and the high frequency signal is turned on / off. If the pulse generator 132 generates a signal to be output to the

high frequency switches

140a and 140b based on this setting, a uniform power intensity distribution having no distribution on the electrodes can be obtained.

In an experiment using high frequency power of 60 MHz, when discharging was performed with a modulation frequency of 1 kHz and an electrode size of 1.2 m × 1.5 m, α to 1 corresponding to about β to 0.8 (duty ratio 70%) A uniformity of ± 12% is obtained. In the case of no modulation, nodes were formed, and the uniformity was about ± 100%.

If the electrode size (cos (kL) ≧ 0) is such that the above I ₃ and I ₁ + I ₂ have the same phase distribution when the phase difference between the high frequencies fed from the two high frequency power sources is zero, The phase of I ₃ and I ₁ + I ₂ may be reversed so that the phase of the high-frequency power supply is shifted by π (rad) relative to the other. Even in this case, a phase shifter is not essential. FIGS. 4-1 to 4-3 are diagrams showing a configuration example of a high-frequency power feeding unit in which a phase difference between high-frequency powers fed from two high-frequency power sources is π so that I ₃ and I ₁ + I ₂ are in opposite phases. is there. For example, as illustrated in FIG. 4A, the phase difference between the high-

frequency power sources

133a and 133b may be set to π (rad) by providing a delay device 200 that functions as a phase adjustment unit. Furthermore, the phase difference between the high-

frequency power sources

133a and 133b may be other than π in consideration of the case where the error is adjusted. Further, it may be configured such that whether or not to give a phase difference of π can be set in the delay device 200 so that the phase difference of 0 or π can be selected according to the size and frequency of the electrode.

Further, as shown in FIG. 4B, by providing a balanced / unbalanced converter 201, the phase difference between the high-

frequency power supplies

133a and 133b may be set to π (rad). Also, as shown in FIG. 4-3, by providing a differential output type high frequency oscillator 202 capable of differential output, the phase difference between the high

frequency power supplies

133a and 133b may be set to π (rad). Thus, the system does not become complicated, and the configuration of the high-frequency power feeding unit can be appropriately selected according to the size of the electrode to be fed.

Also, instead of completely turning off the high-frequency power source on the side that was turned off during the periods (1) and (2) in FIG. 2, auxiliary power can be supplied using these to improve uniformity. In this way, there is a great merit that it is possible to suppress the drop and rise of the distribution at the electrode end. That is, as described above, it is ideal that complete reflection (γ = 1) occurs at the electrode end, but actually γ <1, and an error corresponding to this causes a drop or rise at the electrode end. . Therefore, by supplementary power feeding from the opposite side of the main power feeding point, that is, from the side where reflection occurs, the error can be compensated, and as a result, uniformity is improved. FIG. 5 shows the power profile of the power output from the high-

frequency power supplies

133a and 133b when modulation is performed using high / low (high / low: where low is not 0) rather than on / off of the feed power. It is a figure which shows an example. In this case, the pulse generator 132 outputs a high / low instruction signal instead of the on / off instruction signal, and the high

frequency power supplies

133a and 133b output high or low power based on this signal. It is set as such. 5 indicates a level lower than high and not 0 (off). High indicates the maximum output level output by each high-frequency power supply during the processing period, and low indicates the minimum output level. During each of the periods (1) to (3), power is output at a substantially constant level.

Also, different amounts of power can be supplied during the periods (1) and (2) and the period (3). FIG. 6 is a diagram illustrating an example of a power profile of power output from the high-

frequency power sources

133a and 133b when supplying power of different magnitude depending on the period. For example, as shown in FIG. 6, three power levels of high / middle / low are determined. Middle indicates an output level between high and low. In the period (1) and (2) in FIG. 6, since the number of actual feeding points is halved compared to the period (3), the power (high) in the period (1) and (2) in the period (3). The power density temporal fluctuation can be suppressed by feeding power (middle level power) that is ½ times the power of the level).

In this case, the pulse generator 132 outputs a signal for instructing high / middle / low instead of the signal for instructing on / off, and the high-

frequency power supplies

133a and 133b have a high level or a middle level based on this signal. Or it is set as the structure which outputs low level electric power. Thus, when the instantaneous power density is made uniform, there is a merit that the uniformity of the film forming characteristics can be improved. Further, α is not only determined on the time axis such as the length of the power supply period, but also can be adjusted by changing the input power as in the example of FIG. 6, which can be selected according to the obtained film quality. .

In each of the periods (1), (2), and (3), the length of the power feeding period, the magnitude of the power feeding power, and the like can be changed as appropriate. It is possible to bias the plasma distribution by using an asymmetric power supply. For example, in the manufacture of a plasma processing apparatus, asymmetry is unavoidable due to various factors such as mechanical tolerances and electrode surface conditions. Adjustments can be made to compensate for asymmetry. In particular, when manufacturing a large-sized film forming apparatus, an allowable dimensional tolerance is increased, so that the apparatus manufacturing cost can be suppressed to a low merit.

Also, the combinations of the length and order of the periods (1), (2), and (3) and the magnitude of the power supplied during each period can be set independently and arbitrarily. Regarding the order, for example, in FIG. 2, the modulation waveform is set as (1) → (2) → (3) → (1)... (1) → (3) → (2) → ( It is also possible to set as 3) → (1). Similarly, the combination of the length of the feeding period and the strength of the feeding power can be freely selected, and can be combined so as to be repeated at a certain period. The pulse modulation cycle may be the same for the two high-frequency power supplies, but may be different. In addition, the time average becomes a predetermined value, but it is possible to set a combination of conditions in which each period is short and their order appears at random, and the rocking is instantaneously oscillating at random. It is. Each of the period (1), the period (2), and the period (3) in the entire supply period from the start of supply of high-frequency power to the first electrode in one continuous process of plasma treatment until the supply is stopped The time average value of the power supplied from the high frequency power supply 133a and the time average value of the power supplied from the high frequency power supply of the high frequency power supply 133b may be set to the same time average value in a plurality of periods within the entire supply period. For example, even if the pulse modulation is random, if the time average value is approximately the same for every one-fifth of the entire supply period, a stable film formation can be realized with a temporally uniform process.

Further, a period in which both the high-

frequency power sources

133a and 133b are turned off within one cycle may be further provided. Thereby, for example, the total supply power can be adjusted. Moreover, you may provide in any time within the whole supply period of high frequency electric power not only in 1 period.

In the present embodiment, the case where there are two high-frequency power sources has been described. However, in the case of four, for example, two sets of high-frequency power sources arranged so as to face each other in the electrode plane are respectively as described above. The pulse modulation may be performed so that the sine wave components cancel each other out, and the pulse feeding method of the present embodiment can be applied even when two or more high-frequency power sources are used.

Next, an experiment in which high-frequency plasma is generated with a mixed gas of silane gas and hydrogen gas using the plasma processing apparatus illustrated in FIG. 1 and a microcrystalline silicon film is deposited on a glass substrate will be described.

A 1400 mm × 1100 mm glass substrate (thickness: 4 mm) was placed on the stage 110 in the vacuum chamber 100 that was evacuated, and heated to 200 ° C. using a sheath heater (not shown) built in the stage 110. Next, the height position of the stage 110 was set so that the distance between the electrode block 120 and the substrate to be processed 112 was 5 mm. In this state, silane gas and hydrogen gas were supplied to the film forming gas supply port 123 at flow rates of 1 slm and 50 slm, respectively, and the exhaust speed was adjusted so that the gas pressure in the plasma generation region 113 was 1000 Pa. After the gas pressure was stabilized, the above-described high-frequency supply unit was connected to the shower plate 121 side to generate a SiH ₄ / H ₂ mixed plasma, and film formation was performed for 20 minutes in a state where high-frequency power was fed at an average of 20 kW.

In the case where the configuration disclosed in Patent Document 2 is used, when a 1 μm-thick silicon thin film is formed under the above conditions, the in-plane film thickness distribution is within a range of ± 72% with respect to the average value. . On the other hand, when the film was formed under the same conditions using the apparatus shown in FIG. It was. Assuming that the prepared thin film is used for solar cells, the formation ratio of crystalline silicon was investigated by Raman spectroscopy. A sufficient peak intensity ratio was obtained, and the in-plane uniformity of the formation ratio was within the practical range. I was able to confirm that. From this, it was concluded that a silicon film having excellent characteristics can be formed even with a practical substrate size.

In the present embodiment, numerical values are shown with respect to parameters such as gas flow rate, pressure, and high-frequency power, but these numerical values are examples and can be changed as appropriate. Moreover, although the case of the mixed gas of SiH ₄ and H ₂ has been described as the film forming gas for forming the silicon thin film, a rare gas such as Ar or Ne may be further added. In addition, it is possible to select an appropriate gas type according to the purpose of the process.

The plasma processing apparatus of this embodiment can also be applied to a plasma etching apparatus, an ashing apparatus, a sputtering apparatus, an ion implantation apparatus, and the like.

In this embodiment mode, a horizontal apparatus (holding the substrate 112 to be processed in the horizontal direction) has been described. However, the present invention can also be applied to a vertical apparatus (holding the substrate 112 to be processed in the vertical direction). is there. Which type is selected can be appropriately selected according to the use of the plasma processing apparatus. The present invention can be variously modified, modified, combined, etc. other than those described above.

Embodiment 2. FIG.
In the first embodiment, the description has been given assuming that the number of feeding points is two. However, in the method presented in the present invention, the number of feeding points may be two or more. Hereinafter, as another embodiment, a case where the number of feeding points is four or more will be described as an example of feeding two or more points. The configuration of the plasma processing apparatus of the present embodiment is different in the number of feeding points (that is, four sets of high-frequency power supply, matching unit and feeding bar, and the pulse generator (power switching unit) 132 switches to four high-frequency power supplies. The configuration is the same as that of the first embodiment except that an output signal is supplied for the first embodiment. In addition, although it was set as 4 points | pieces for the sake of simplicity, it can be extended in the same way when the number of feeding points is 3 or more or 5 or more. In the case of a rectangular electrode, an even number of feeding points is preferable, but in the case of a circular electrode or the like, it is also easy to set an odd number of feeding points.

FIGS. 7-1 and 7-2 show an example of the arrangement of the feeding points of the present embodiment. The feeding points 301a to 301d indicate four feeding points (positions of the feeding bar on the electrode 300) in the electrode 300 plane. The feeding points 301 a to 301 d are required to be disposed at positions facing each other on the electrode 300. The center of the electrode 300 does not have to be a target arrangement having a symmetry axis and a symmetry point, but such a highly symmetrical arrangement is better. When the electrode 300 is divided into two regions by a straight line passing through the center of gravity of the electrode 300, a feeding point is provided in each of the two regions so as to perform the same operation as the control of the two high-frequency powers in the first embodiment. It may be. For example, as shown in FIG. 7A, feeding points 301a to 301d are arranged at the center end of each side of the electrode 300, arranged at the four corners of the electrode 300 as shown in FIG. As shown, it is better to arrange a plurality of pairs facing each other on the long side or the short side of the electrode 300. Hereinafter, a detailed description will be given based on the arrangement of FIG.

In the arrangement shown in FIG. 7A, plasma is generated using the feeding points 301a and 301c arranged at the center of the short side of the electrode 300 and the feeding points 301b and 301d arranged at the center of the long side of the electrode 300. In general, when power is supplied to a single-plate electrode, high-frequency power wraps around the electrode end, so that the power distribution in the electrode surface may be distorted compared to when approximated by a plane wave.

8-1 and 8-2 show schematic diagrams of the power intensity distribution when plane wave approximation is performed and the power intensity distribution when wraparound occurs. For example, when in-phase simultaneous power feeding is performed using only the feeding points 301a and 301c on the short side of the electrode 300, it is considered as a plane wave that propagates high-frequency power in the X-axis direction (parallel to the long side) of the electrode 300. A kamaboko-shaped distribution as shown in -1. However, considering a plane wave propagating in the Y-axis direction (parallel to the short side) as a wraparound, an egg-shaped distribution as shown in FIG. 8-2 is obtained. Here, FIG. 8-2 shows the calculation result assuming that the high frequency power entering from the long side direction of the electrode 300 is 16% with respect to the high frequency power incident between the electrodes from the short side direction of the electrode 300. However, almost the same shape was obtained by actual measurement. In this case, even if the method shown in Embodiment 1 is used for the feeding points 301a and 301c, the distribution is also formed in the Y-axis direction of the electrode 300, that is, the direction orthogonal to the plane wave, so that it is difficult to make it uniform. Therefore, it is preferable to compensate the distribution in the Y-axis direction by designing a power profile using the feed points 301b and 301d arranged on the long side of the electrode 300 so as to raise the distribution of the electrode long side end.

FIG. 9 is a diagram illustrating an example of a power profile when the number of feeding points is four. FIG. 9 shows an example of a power profile of power supplied from the

power supply points

301a, 301b, 301c, and 301d. In the example of the power profile shown in FIG. 9, the power profile is mainly divided into a period 320 in which the electrode 300 is made uniform in the X-axis direction and a period 321 in which the electrode 300 is made uniform in the Y-axis direction. In the period 320 in which the uniformity in the X-axis direction is performed, a power profile can be designed using the feeding points 301a and 301c based on the method described in the first embodiment. In the period 321 in which the uniformization in the Y-axis direction is performed, the power profile is similarly calculated based on the method described in the first embodiment using the feeding points 301b and 301d according to the distribution in which the uniformization is performed in the period 320. Can be designed. Conversely, the power profile may be designed such that the uniformity in the Y-axis direction is performed and the uniformity in the X-axis direction is adjusted accordingly. Which to perform is suitably determined according to the size of the electrode, the discharge conditions, the obtained film quality, and the like.

Also, a plurality of feeding points may be fed with the same power profile. FIGS. 10-1 to 10-3 show an example of grouping of feeding points when the same power profile is applied to a plurality of feeding points in the arrangement of feeding points shown in FIG. 7-3. In FIGS. 10-1 to 10-3, there are eight feeding points (301a to 301h). For example, as shown in FIG. 10A, the

feeding points

301a, 301b, 301g, and 301h are grouped so that the feeding points 301c, 301d, 301e, and 301f are another group, and the feedings that belong to the same group As for the point, the same power profile is used, and the power profile is designed as shown in the first embodiment, whereby the electrode 300 can be made uniform in the X-axis direction. Similarly, as shown in FIG. 10B, when the

feeding points

301a, 301b, 301c, and 301d and the

feeding points

301e, 301f, 301g, and 301h are grouped, the electrode 300 can be made uniform in the Y-axis direction. it can. Further, as shown in FIG. 10-3, the

feeding points

301a, 301b, 301e, and 301f and the feeding points 301c, 301d, 301g, and 301h can be grouped, and uniformization can be performed on the electrode diagonal axes. .

Moreover, further uniformization can be performed by switching such grouping along the time axis. FIGS. 11-1 to 11-5 are diagrams showing changes in distribution when the grouping of the feeding points is changed in the arrangement of the feeding points shown in FIG. 7-3. Similar to FIGS. 8A and 8B, the calculation results are based on the assumption that there is a sneak current of 16%. Here, when the feeding points 301a and 301h and the feeding points 301d and 301e are fed as a group, when only the feeding points 301a and 301h are on, the distribution is as shown in FIG. 11A, and only the feeding points 301d and 301e. When is turned on, the distribution is as shown in FIG. When feeding points 301b and 301c and feeding points 301f and 301g are fed as a group, when only feeding

points

301b and 301c are on, the distribution is as shown in FIG. 11-3, and only feeding

points

301f and 301g are fed. When turned on, the distribution is as shown in FIG. 11-4. When all the feeding points are turned on at the same time, the distribution is as shown in FIG. 11-5. When these distributions are switched at an appropriate time, the uniformity becomes ± 5%, and it can be seen that significant uniformity is possible.

It should be noted that such a group, that is, switching of the power distribution may be performed so as to change as smoothly as possible in the plane of the electrode 300. If the power distribution changes sharply, the change in plasma distribution may not be able to respond. In particular, when the plasma remains on, the ease of generating plasma in the electrode surface (discharge start threshold electric field strength) differs depending on the immediately preceding plasma distribution. Sexual deterioration may occur. In order to avoid this, for example, a pattern in which all feeding points are turned on when the distribution is switched can be inserted. Thereby, it is possible to create a state in which plasma is always generated in the center of the electrode 300 before the distribution change, and it is possible to suppress deterioration in controllability of the plasma distribution depending on the power profile. Conversely, by turning off all the feeding points, it is possible to create a state where the plasma is always extinguished before the distribution change, and to suppress deterioration in controllability of the plasma distribution depending on the power profile. Can do. In addition to this, various patterns can be used, and it is preferable to select which pattern is selected according to the controllability of plasma and the obtained film quality.

As described above in Embodiment 1 and Embodiment 2, the present invention includes two or more high-frequency powers that supply power to at least two or more different locations on the electrode. At least two of the high-frequency powers are pulse-modulated so that the supplied power changes at a plurality of levels including a high level and a low level (including power off). Then, within the pulse modulation period, the supply power of one high-frequency power supply is at a high level and the supply power of the other high-frequency power supply is at a low level, and the supply power of the other high-frequency power supply is high. The second period in which the supply power of one high-frequency power supply is low and the supply power of one high-frequency power supply and the supply power of the other high-frequency power supply are both higher than the low level. 3 periods. In the third period, the ratio of the power supplied from the high-frequency power source is made closer to 1: 1 than in the first period or the second period. The two high-frequency power supplies of the high-frequency power, the low-level power supplies, and the power supplies in the third period do not necessarily have to be the same. Also good. If periodical pulse modulation is performed so that the first to third periods of the power supplied from the two high-frequency power sources appear in the same periodic pattern, it is very easy to make the time ratio of the first to third periods constant. . The in-plane distribution of the process can be controlled by adjusting the time ratio of the first to third periods with respect to the power supply time that is the entire process period. For example, the in-plane distribution is made as uniform as possible based on the in-plane distribution result obtained by experimenting in advance under pulse modulation conditions in which the time ratios of the first period, the second period, and the third period are changed. The time ratios of the first period, the second period, and the third period, and the output level of each high-frequency power source may be adjusted. According to the present invention, even when the frequency region of the VHF band is used, a uniform in-plane electric field distribution can be formed in a large area region without complicating the device configuration.

As described above, the high-frequency power supply device, the plasma processing apparatus, and the thin film manufacturing method according to the present invention are useful for a plasma processing apparatus for forming a thin film on a substrate, and in particular, have a large area using a VHF band. This is suitable for a plasma processing apparatus for forming a thin film on a substrate.

DESCRIPTION OF SYMBOLS 100 Vacuum chamber 101 Flange 102 Exhaust port 103 Gate valve 110 Stage 111 Support | pillar 112 Processed substrate 113 Plasma generation area | region 120 Electrode block 121

Shower plate

122a, 122b Insulation spacer 123 Film-forming gas supply port 124 Shield box 130 High frequency oscillator 131 Demultiplexer 132

Pulse generator

133a, 133b High

frequency power supply

134a,

134b Matching device

135a,

135b Feed bar

136a, 136b Insulating spacer 140a, 140b

High frequency switch

141a, 141b

High frequency amplifier

142a, 142b Isolator 200 Delay device 201 Balanced / unbalanced converter 202 Differential Output type high frequency oscillator 300

electrode

301a, 301b, 301c, 301d, 301e, 301f, 301g, 301h Feeding point 320, 321 Period

Claims

A high-frequency power supply device that supplies high-frequency power to the first electrode of a parallel plate electrode composed of a first electrode and a second electrode disposed to face the first electrode,
A first high-frequency power source and a second high-frequency power source that respectively supply high-frequency power to positions apart from the first electrode;
Supply power of the first high-frequency power supply is pulse-modulated so that the supply power of the first high-frequency power supply and the supply power of the second high-frequency power supply change at a plurality of levels including a high level and a low level. Is at a high level and the supply power of the second high-frequency power supply is at a low level; the supply power of the second high-frequency power supply is at a high level; and A second period in which the supply power is at a low level; and a third period in which both the supply power of the first high-frequency power supply and the supply power of the second high-frequency power supply are higher than the low level. A power switching unit for instructing switching of the level of power supplied to the first high-frequency power source and the second high-frequency power source so as to include:
A high frequency power supply apparatus comprising:
In the first period, the second high-frequency power supply stops supplying power, and in the second period, the first high-frequency power supply stops supplying power.
The high-frequency power supply device according to claim 1.
The supply power of the first high-frequency power source in the first period is made equal to the supply power of the second high-frequency power supply in the second period, and in the third period, the first high-frequency power supply The power source and the second high-frequency power source supply power smaller than the power supplied by the first high-frequency power source in the first period;
The high-frequency power supply device according to claim 1.
In the third period, the first high-frequency power supply and the second high-frequency power supply supply half the power supplied from the first high-frequency power supply in the first period.
The high-frequency power supply device according to claim 3.
Means for providing a phase difference between the feeding power of the first high-frequency power source and the feeding power of the second high-frequency power source;
The high-frequency power supply device according to any one of claims 1 to 4, wherein
The phase difference between the feeding power of the first high-frequency power source and the feeding power of the second high-frequency power source is 0 radians or π radians,
The high-frequency power supply device according to any one of claims 1 to 5, wherein
The duration of each of the first period, the second period and the third period;
An order of the first period, the second period and the third period;
Supply power of each of the first high-frequency power source and the second high-frequency power source in the first period, the second period, and the third period;
Are set independently of each other,
The high-frequency power supply device according to any one of claims 1 to 6, wherein
An order of the first period, the second period and the third period;
Supply power of each of the first high-frequency power source and the second high-frequency power source in the first period, the second period, and the third period;
The set value repeats the same set value at regular intervals.
The high-frequency power supply device according to claim 7.
The first high-frequency power source in each of the first period, the second period, and the third period in the entire supply period from the start of supply of high-frequency power to the first electrode until the supply is stopped The time average value of the supply power of the second high-frequency power supply is the same time average value in a plurality of periods in the entire supply period. High frequency power supply device.
The fourth high-frequency power supply and the second high-frequency power supply both stop supplying power within the entire supply period from when supply of high-frequency power to the first electrode is started until supply is stopped. The high-frequency power supply apparatus according to any one of claims 1 to 9, further comprising:
n is an integer of 3 or more, and n high-frequency power supplies for supplying high-frequency power to the first electrode at different power supply positions are provided, and the first high-frequency power supply and the second high-frequency power supply include the n high-frequency power supplies. The high-frequency power supply apparatus according to any one of claims 1 to 10, wherein at least one of the high-frequency power supplies is used.
The n high-frequency power sources are a plurality of pairs of high-frequency power sources each including two high-frequency power sources, and the high-frequency power sources constituting each pair are the first high-frequency power source and the second high-frequency power source. The high frequency power supply apparatus according to claim 11, wherein a period for supplying high frequency power to the first electrode is set.
The n high frequency power sources are grouped into two groups, the high frequency power source belonging to one group operates as the first high frequency power source, and the high frequency power source belonging to the other group is used as the second high frequency power source. The high frequency power supply device according to claim 11, wherein the high frequency power supply device operates.
A high-frequency power supply device according to any one of claims 1 to 13,
A vacuum chamber;
A shower plate disposed in the vacuum chamber, functioning as a first electrode to which power is supplied from the high-frequency power supply device, and supplying a plasma generating gas to a substrate to be processed;
A stage that is disposed in the vacuum chamber and includes a mechanism for placing the substrate to be processed; and a stage that functions as a second electrode;
A plasma processing apparatus comprising:
Plasma is generated by supplying high-frequency power to the first electrode of a parallel plate electrode composed of a first electrode and a second electrode disposed opposite to the first electrode, and a chemical vapor is generated. A thin film manufacturing method for forming a thin film on a deposition target substrate by a phase deposition method,
The first high-frequency power source and the second high-frequency power source are respectively arranged so as to supply power to positions separated in the plane of the first electrode,
A first step of supplying a plasma generating gas onto the deposition target substrate placed on the second electrode;
Supply power of the first high-frequency power supply is pulse-modulated so that the supply power of the first high-frequency power supply and the supply power of the second high-frequency power supply change at a plurality of levels including a high level and a low level. Is at a high level and the supply power of the second high-frequency power supply is at a low level; the supply power of the second high-frequency power supply is at a high level; and A second period in which the supply power is at a low level; and a third period in which both the supply power of the first high-frequency power supply and the supply power of the second high-frequency power supply are higher than the low level. A second step of instructing switching of power supply levels of the first high-frequency power source and the second high-frequency power source to include:
The first high-frequency power source and the second high-frequency power source supply power to the first electrode based on an instruction of the second step, thereby decomposing the plasma generation gas to form the deposition target substrate. A third step of forming a thin film;
A thin film manufacturing method comprising: