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WO2012018199A3 - 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법 - Google Patents

점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법 Download PDF

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Publication number
WO2012018199A3
WO2012018199A3 PCT/KR2011/005626 KR2011005626W WO2012018199A3 WO 2012018199 A3 WO2012018199 A3 WO 2012018199A3 KR 2011005626 W KR2011005626 W KR 2011005626W WO 2012018199 A3 WO2012018199 A3 WO 2012018199A3
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WO
WIPO (PCT)
Prior art keywords
manufacturing
method therefor
refractive index
solar cell
silicon
Prior art date
Application number
PCT/KR2011/005626
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English (en)
French (fr)
Other versions
WO2012018199A2 (ko
Inventor
장성준
이용탁
송영민
Original Assignee
광주과학기술원
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Filing date
Publication date
Application filed by 광주과학기술원 filed Critical 광주과학기술원
Priority to US13/703,702 priority Critical patent/US20130087194A1/en
Priority to CN2011800378467A priority patent/CN103069308A/zh
Publication of WO2012018199A2 publication Critical patent/WO2012018199A2/ko
Publication of WO2012018199A3 publication Critical patent/WO2012018199A3/ko

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1228—Active materials comprising only Group IV materials porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)

Abstract

본 발명은 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법에 관한 것으로, 실리콘을 반도체 또는 유리 기판 상에 비스듬히 기울여 증착하는 것으로 실리콘 박막의 굴절률을 조절하는 것을 특징으로 하며, 경사각을 달리하여 다층으로 적층된 실리콘 다층막을 이용하여 굴절률이 점진적으로 변화하는 무반사막을 구현하는 것을 특징으로 한다. 또한, 실리콘 태양전지에 본 발명에 따른 실리콘 다층 무반사막을 적용하여 태양전지 내부의 반사를 억제하며, 높은 열전달계수를 이용한 우수한 방열특성을 제공할 수 있는 효과가 있다.
PCT/KR2011/005626 2010-08-02 2011-07-29 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법 WO2012018199A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/703,702 US20130087194A1 (en) 2010-08-02 2011-07-29 Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor
CN2011800378467A CN103069308A (zh) 2010-08-02 2011-07-29 折射率逐渐变化的多层硅无反射膜及其制备方法以及具有该多层硅无反射膜的太阳能电池及其制备方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100074566A KR20120012555A (ko) 2010-08-02 2010-08-02 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법
KR10-2010-0074566 2010-08-02

Publications (2)

Publication Number Publication Date
WO2012018199A2 WO2012018199A2 (ko) 2012-02-09
WO2012018199A3 true WO2012018199A3 (ko) 2012-05-10

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PCT/KR2011/005626 WO2012018199A2 (ko) 2010-08-02 2011-07-29 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법

Country Status (4)

Country Link
US (1) US20130087194A1 (ko)
KR (1) KR20120012555A (ko)
CN (1) CN103069308A (ko)
WO (1) WO2012018199A2 (ko)

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* Cited by examiner, † Cited by third party
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US8948562B2 (en) 2008-11-25 2015-02-03 Regents Of The University Of Minnesota Replication of patterned thin-film structures for use in plasmonics and metamaterials
KR101324233B1 (ko) * 2012-05-11 2013-11-01 연세대학교 산학협력단 발광 장치 및 발광 시스템
CN103178158B (zh) * 2013-02-28 2015-09-23 溧阳市生产力促进中心 具有减反射膜的四结太阳能电池的制造方法
CN103199123B (zh) * 2013-03-28 2015-12-23 常州大学 一种太阳能电池减反结构及其制备方法
MX351488B (es) * 2013-05-17 2017-06-30 Univ Autonoma Del Estado De Morelos Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético.
CN105355719A (zh) * 2015-11-23 2016-02-24 百力达太阳能股份有限公司 一种用于全黑组件的多晶硅太阳能电池制造工艺
CN108699727B (zh) * 2016-02-25 2021-06-11 日本碍子株式会社 多晶氮化镓自立基板和使用该多晶氮化镓自立基板的发光元件
CN105951051A (zh) * 2016-06-16 2016-09-21 哈尔滨工业大学 一种倾斜溅射工艺制备渐变折射率减反射膜的方法
KR20180007539A (ko) * 2016-07-13 2018-01-23 주식회사 메디트 3차원 표면 측정용 광경로 길이 변경장치
CN109863434B (zh) * 2016-10-20 2022-04-26 3M创新有限公司 用于光学窗口掩饰的装置
JP2018107314A (ja) * 2016-12-27 2018-07-05 富士通株式会社 光検知器及び撮像装置
TWI771975B (zh) * 2021-04-01 2022-07-21 國立中山大學 太陽能板抗反射層的製造方法
CN116722060A (zh) 2022-09-28 2023-09-08 浙江晶科能源有限公司 太阳能电池及光伏组件

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JPH07333403A (ja) * 1994-06-10 1995-12-22 Olympus Optical Co Ltd 反射防止膜の成膜方法
JPH1068801A (ja) * 1996-08-29 1998-03-10 Matsushita Electric Ind Co Ltd 反射防止膜
KR20070016570A (ko) * 2005-08-04 2007-02-08 인하대학교 산학협력단 저굴절률 박막 제조방법 및 이를 이용한 무반사 코팅 방법
KR20100030549A (ko) * 2008-09-09 2010-03-18 한국전자통신연구원 태양 전지 및 태양전지 제조방법

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US20100059119A1 (en) * 2008-09-09 2010-03-11 Electronics And Telecommunications Research Institute Solar cell and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07333403A (ja) * 1994-06-10 1995-12-22 Olympus Optical Co Ltd 反射防止膜の成膜方法
JPH1068801A (ja) * 1996-08-29 1998-03-10 Matsushita Electric Ind Co Ltd 反射防止膜
KR20070016570A (ko) * 2005-08-04 2007-02-08 인하대학교 산학협력단 저굴절률 박막 제조방법 및 이를 이용한 무반사 코팅 방법
KR20100030549A (ko) * 2008-09-09 2010-03-18 한국전자통신연구원 태양 전지 및 태양전지 제조방법

Also Published As

Publication number Publication date
US20130087194A1 (en) 2013-04-11
WO2012018199A2 (ko) 2012-02-09
KR20120012555A (ko) 2012-02-10
CN103069308A (zh) 2013-04-24

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