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WO2012016231A3 - Systems, apparatuses, and methods for chemically processing substrates using the coanda effect - Google Patents

Systems, apparatuses, and methods for chemically processing substrates using the coanda effect Download PDF

Info

Publication number
WO2012016231A3
WO2012016231A3 PCT/US2011/046059 US2011046059W WO2012016231A3 WO 2012016231 A3 WO2012016231 A3 WO 2012016231A3 US 2011046059 W US2011046059 W US 2011046059W WO 2012016231 A3 WO2012016231 A3 WO 2012016231A3
Authority
WO
WIPO (PCT)
Prior art keywords
coanda effect
apparatuses
methods
systems
processing substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/046059
Other languages
French (fr)
Other versions
WO2012016231A2 (en
Inventor
Ronald L. Colvin
Sr. Dennis Goodwin
Jeff Mittendorf
Charles J. Moretti
John W. Rose
Earl Blake Samuels
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAWRENCE ADVANCED SEMICONDUCTOR TECHNOLOGIES LLC
Original Assignee
LAWRENCE ADVANCED SEMICONDUCTOR TECHNOLOGIES LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LAWRENCE ADVANCED SEMICONDUCTOR TECHNOLOGIES LLC filed Critical LAWRENCE ADVANCED SEMICONDUCTOR TECHNOLOGIES LLC
Publication of WO2012016231A2 publication Critical patent/WO2012016231A2/en
Publication of WO2012016231A3 publication Critical patent/WO2012016231A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H10P14/24—
    • H10P14/3402—
    • H10P14/3411—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A system for processing substrates is described. In one embodiment, the system comprises a process chamber and at least one Coanda effect gas injector. The at least one Coanda effect gas injector is disposed proximate a location for the peripheral edge of the substrate so as to provide a Coanda effect gas flow over the surface of the substrate. Apparatuses and methods are also described.
PCT/US2011/046059 2010-07-30 2011-07-30 Systems, apparatuses, and methods for chemically processing substrates using the coanda effect Ceased WO2012016231A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36907210P 2010-07-30 2010-07-30
US61/369,072 2010-07-30

Publications (2)

Publication Number Publication Date
WO2012016231A2 WO2012016231A2 (en) 2012-02-02
WO2012016231A3 true WO2012016231A3 (en) 2012-05-31

Family

ID=45530766

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/046059 Ceased WO2012016231A2 (en) 2010-07-30 2011-07-30 Systems, apparatuses, and methods for chemically processing substrates using the coanda effect

Country Status (2)

Country Link
TW (1) TW201222636A (en)
WO (1) WO2012016231A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9933536B2 (en) * 2009-03-09 2018-04-03 Ion Geophysical Corporation Arctic seismic surveying operations

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810942A (en) * 1996-09-11 1998-09-22 Fsi International, Inc. Aerodynamic aerosol chamber
US20090163042A1 (en) * 2007-12-20 2009-06-25 Applied Materials, Inc. Thermal reactor with improved gas flow distribution
US20100087050A1 (en) * 2008-10-03 2010-04-08 Veeco Instruments Inc. Chemical vapor deposition with energy input
WO2012016084A2 (en) * 2010-07-29 2012-02-02 Lawrence Advanced Semiconductor Technologies, Llc Substrate processing apparatuses and systems

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810942A (en) * 1996-09-11 1998-09-22 Fsi International, Inc. Aerodynamic aerosol chamber
US20090163042A1 (en) * 2007-12-20 2009-06-25 Applied Materials, Inc. Thermal reactor with improved gas flow distribution
US20100087050A1 (en) * 2008-10-03 2010-04-08 Veeco Instruments Inc. Chemical vapor deposition with energy input
WO2012016084A2 (en) * 2010-07-29 2012-02-02 Lawrence Advanced Semiconductor Technologies, Llc Substrate processing apparatuses and systems

Also Published As

Publication number Publication date
WO2012016231A2 (en) 2012-02-02
TW201222636A (en) 2012-06-01

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