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WO2012015261A3 - Silicon carbide and method for manufacturing the same - Google Patents

Silicon carbide and method for manufacturing the same Download PDF

Info

Publication number
WO2012015261A3
WO2012015261A3 PCT/KR2011/005579 KR2011005579W WO2012015261A3 WO 2012015261 A3 WO2012015261 A3 WO 2012015261A3 KR 2011005579 W KR2011005579 W KR 2011005579W WO 2012015261 A3 WO2012015261 A3 WO 2012015261A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
manufacturing
same
silicon
source
Prior art date
Application number
PCT/KR2011/005579
Other languages
French (fr)
Other versions
WO2012015261A2 (en
Inventor
Jung Eun Han
Sang Myung Kim
Byung Sook Kim
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Publication of WO2012015261A2 publication Critical patent/WO2012015261A2/en
Publication of WO2012015261A3 publication Critical patent/WO2012015261A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/97—Preparation from SiO or SiO2
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Provided is a method for manufacturing silicon carbide. In the method, silicon source and carbon source are mixed, and the mixed sources are heated to form silicon carbide. Herein, in the mixing of the sources, a molar ratio of carbon contained in the carbon source to silicon contained in the silicon source is in a range of 1.5 to 3.
PCT/KR2011/005579 2010-07-30 2011-07-28 Silicon carbide and method for manufacturing the same WO2012015261A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100074435A KR20120012345A (en) 2010-07-30 2010-07-30 Silicon carbide and method for manufacturing the same
KR10-2010-0074435 2010-07-30

Publications (2)

Publication Number Publication Date
WO2012015261A2 WO2012015261A2 (en) 2012-02-02
WO2012015261A3 true WO2012015261A3 (en) 2012-04-19

Family

ID=45530622

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005579 WO2012015261A2 (en) 2010-07-30 2011-07-28 Silicon carbide and method for manufacturing the same

Country Status (2)

Country Link
KR (1) KR20120012345A (en)
WO (1) WO2012015261A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102355080B1 (en) * 2015-01-16 2022-01-25 (주)에스테크 Silicon carbide powder
KR102117911B1 (en) 2019-02-01 2020-06-02 (주) 대흥씨앤피 Folding paper feeding device
KR102407043B1 (en) 2022-03-04 2022-06-10 주식회사 에스티아이 Synthesis method of high-purity silicon carbide power

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340417A (en) * 1989-01-11 1994-08-23 The Dow Chemical Company Process for preparing silicon carbide by carbothermal reduction
KR20090042202A (en) * 2006-08-22 2009-04-29 신에쓰 가가꾸 고교 가부시끼가이샤 Single Crystal SiC and Manufacturing Method Thereof
KR20090042539A (en) * 2007-10-26 2009-04-30 주식회사 썬세라텍 Manufacturing Method of Silicon Carbide Nanopowder
KR20100071863A (en) * 2008-12-19 2010-06-29 엘지이노텍 주식회사 Method of fabricating silicon carbide powder

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340417A (en) * 1989-01-11 1994-08-23 The Dow Chemical Company Process for preparing silicon carbide by carbothermal reduction
KR20090042202A (en) * 2006-08-22 2009-04-29 신에쓰 가가꾸 고교 가부시끼가이샤 Single Crystal SiC and Manufacturing Method Thereof
KR20090042539A (en) * 2007-10-26 2009-04-30 주식회사 썬세라텍 Manufacturing Method of Silicon Carbide Nanopowder
KR20100071863A (en) * 2008-12-19 2010-06-29 엘지이노텍 주식회사 Method of fabricating silicon carbide powder

Also Published As

Publication number Publication date
WO2012015261A2 (en) 2012-02-02
KR20120012345A (en) 2012-02-09

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