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WO2012012979A1 - 一种激光与酸刻蚀结合的制绒方法 - Google Patents

一种激光与酸刻蚀结合的制绒方法 Download PDF

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Publication number
WO2012012979A1
WO2012012979A1 PCT/CN2010/078389 CN2010078389W WO2012012979A1 WO 2012012979 A1 WO2012012979 A1 WO 2012012979A1 CN 2010078389 W CN2010078389 W CN 2010078389W WO 2012012979 A1 WO2012012979 A1 WO 2012012979A1
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WO
WIPO (PCT)
Prior art keywords
velvet
laser
etching
silicon wafer
acid
Prior art date
Application number
PCT/CN2010/078389
Other languages
English (en)
French (fr)
Inventor
盛健
Original Assignee
常州天合光能有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州天合光能有限公司 filed Critical 常州天合光能有限公司
Publication of WO2012012979A1 publication Critical patent/WO2012012979A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers

Definitions

  • the invention relates to a production process of a crystalline silicon solar cell, in particular to a texturing process combining laser and acid etching. Background technique
  • the existing crystalline silicon solar cell texturing process includes a single crystal alkali texturing process, a single crystal polycrystalline acid texturing process, a photolithography process, and a pure laser etching process.
  • the single crystal alkali texturing process refers to selective etching of a single crystal surface with an alkali solution to form a surface pyramid inversion structure.
  • the single crystal polycrystalline acid texturing process refers to the use of an acid solution for the isotropic corrosion of the surface of the single crystal polycrystal according to its cutting defects.
  • the photolithography process refers to the selective masking of the surface of the silicon wafer with a photoresist and a mask, and then etching and masticating with the acid in the mask removal region.
  • the pure laser etching and texturing process directly etches the surface of the silicon wafer by laser. Others, such as reactive ion etching, are mainly used to fabricate anti-reflective structures on the surface of silicon wafers.
  • the alkali-based velvet process with better suede effect is generally only suitable for single crystal.
  • the industrialization process of polycrystal is generally an acid-fabrication process, and its anti-reflection effect is relatively poor.
  • the photolithography process has a better effect, but the process is complicated and the cost is high.
  • the pure laser fleece process has a serious damage layer after the velvet, which has a great influence on the battery performance. Summary of the invention
  • the technical problem to be solved by the present invention is: to overcome the deficiencies of the prior art, and provide a texturing process combining laser and acid etching, which is suitable for single or polycrystalline fluffing, and the uniformity of suede after softening is higher. Ok, the suede reflectance is low.
  • the technical solution adopted by the present invention to solve the technical problem is: a combination of laser and acid etching
  • the process of the texturing process is as follows: First, a mask is formed on the surface of the silicon wafer, and then the laser is uniformly opened on the surface of the silicon wafer, the hole spacing is 5 to 10 micrometers, the aperture is 3 to 5 micrometers, and the silicon wafer is placed after the hole is punched. Etching is performed in a mixed solution of HF and HNO 3 , and the time difference of the reaction with the acid is masked at the small holes, and the surface of the silicon wafer is formed into a uniform pile surface.
  • the beneficial effects of the present invention are as follows:
  • the laser is combined with an acid etching, and the time difference between the mask and the acid is used to make a hole in the small hole, and a uniform suede surface is formed on the surface of the silicon wafer.
  • the texturing process of the present invention is suitable for both single crystal and polycrystalline silicon wafers, and can compensate for the high reflectivity of polycrystalline acid.
  • the suede finished by the process of the present invention has a better uniformity than the conventional process because of good uniformity, and the suede reflectance is low. detailed description
  • a process of combining laser and acid etching the process steps are as follows: (1) removal of the surface damage layer of the silicon wafer; (2) preparation of the surface mask: forming a mask on the surface of the silicon wafer; (3) using a laser Uniform opening of the surface of the silicon wafer, the hole spacing is 5 ⁇ 10 microns, the aperture is 3 ⁇ 5 microns; (4) After the hole is punched, the silicon wafer is placed in a mixed solution of HF and HN0 3 for etching, and the surface of the silicon wafer is uniformly velvet. Face; (5) cleaning.
  • the laser is combined with the acid etching, and the time difference of the reaction between the mask and the acid is used to make a hole in the small hole, and a uniform suede surface is formed on the surface of the silicon wafer.
  • the texturing process of the present invention is suitable for single crystal or polycrystalline silicon wafers, and can compensate for the high reflectivity of polycrystalline acid.
  • the suede finished by the process of the present invention has a better uniformity, and the light absorption effect is remarkably improved compared with the conventional process, and the suede reflectance is low.

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  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Description

说 明 书 一种激光与酸刻蚀结合的制绒方法 技术领域
本发明涉及晶体硅太阳能电池生产工艺， 尤其是一种激光与酸刻蚀结合的 制绒工艺。 背景技术
现有晶体硅太阳能电池制绒工艺有单晶碱制绒工艺、 单晶多晶酸制绒工艺、 光刻制绒工艺以及纯激光刻蚀制绒工艺。 单晶碱制绒工艺是指用碱液对单晶表 面进行选择性腐蚀， 制成表面金字塔减反结构。 单晶多晶的酸制绒工艺是指用 酸液对单晶多晶的表面按其切割缺陷进行各晶向同性腐蚀。 光刻制绒工艺是指 用光刻胶加掩膜版对硅片表面进行选择性掩膜， 然后用酸在去除掩膜区进行刻 蚀制绒。 纯激光刻蚀制绒工艺是直接用激光对硅片表面进行刻蚀制绒。 其它还 有些如反应离子刻蚀等， 主要目的就是在硅片表面制造减反射结构。
但这些现有的工艺都存在一定的局限性， 如绒面效果较好的碱制绒工艺一 般只适合于单晶。 而多晶现阶段产业化工艺一般为酸制绒工艺， 其减反射的效 果比较差。 光刻制绒工艺的效果较好， 但其工艺复杂， 成本较高。 纯激光制绒 工艺其制绒后损伤层较为严重， 对电池性能影响较大。 发明内容
本发明要解决的技术问题是： 克服现有技术的不足， 提供一种激光与 酸刻蚀结合的制绒工艺， 适用于单晶或多晶的制绒， 制绒后的绒面均匀性 较好， 绒面反射率较低。
本发明解决其技术问题所采用的技术方案是：一种激光与酸刻蚀结合 的制绒工艺， 其工艺步骤如下： 首先在硅片表面形成掩膜， 然后利用激光 在硅片表面均匀开孔， 孔间隔 5〜10微米， 孔径 3〜5微米， 孔打好后硅 片放置在 HF和 HN03的混合溶液中进行刻蚀， 利用掩膜与酸反应的时间差 在小孔处钻蚀， 硅片表面形成均匀的绒面。
本发明的有益效果是： 本发明将激光与酸刻蚀结合， 利用掩膜与酸反 应的时间差， 在小孔处钻蚀， 硅片表面形成均匀的绒面。 本发明的制绒工 艺对单晶或多晶硅片都适合， 可以弥补多晶酸制绒反射率高的缺陷。 而且 利用本发明的工艺完成的绒面， 因为均匀性好， 故光吸收效果较传统工艺 有明显提升， 绒面反射率较低。 具体实施方式
一种激光与酸刻蚀结合的制绒工艺， 其工艺步骤如下： （1 )硅片表面 损伤层去除； （2 ) 表面掩膜制备： 在硅片表面形成掩膜； （3 ) 利用激光在 硅片表面均匀开孔， 孔间隔 5〜10微米， 孔径 3〜5微米； （4 ) 孔打好后 硅片放置在 HF和 HN03的混合溶液中进行刻蚀，硅片表面形成均匀的绒面； ( 5 ) 清洗。
本发明将激光与酸刻蚀结合， 利用掩膜与酸反应的时间差， 在小孔处 钻蚀， 硅片表面形成均匀的绒面。 本发明的制绒工艺对单晶或多晶硅片都 适合， 可以弥补多晶酸制绒反射率高的缺陷。 而且利用本发明的工艺完成 的绒面， 因为均匀性好， 故光吸收效果较传统工艺有明显提升， 绒面反射 率较低。

Claims

权 利 要 求 书
1、 一种激光与酸刻蚀结合的制绒工艺， 其特征在于： 其工艺步骤如 下： 首先在硅片表面形成掩膜， 然后利用激光在硅片表面均匀开孔， 孔间 隔 5〜10微米， 孔径 3〜5微米， 孔打好后硅片放置在 HF和 HN03的混合溶 液中进行刻蚀， 利用掩膜与酸反应的时间差在小孔处钻蚀， 硅片表面形成 均匀的绒面。
PCT/CN2010/078389 2010-07-28 2010-11-03 一种激光与酸刻蚀结合的制绒方法 WO2012012979A1 (zh)

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CN102181940B (zh) * 2011-04-08 2012-07-18 光为绿色新能源股份有限公司 一种多晶硅绒面的制备方法
CN102810594B (zh) * 2011-05-31 2015-11-25 茂迪(苏州)新能源有限公司 类单晶硅片的制绒方法
CN107749402B (zh) * 2017-10-25 2020-03-20 中国科学院物理研究所 直拉单晶硅片的结构缺陷检测方法
CN109755098B (zh) * 2017-11-01 2021-08-10 天津环鑫科技发展有限公司 一种硅片激光与酸液结合制绒工艺
CN109755112B (zh) * 2017-11-01 2021-09-07 天津环鑫科技发展有限公司 一种单向tvs芯片玻钝前二次扩散工艺
CN111799339A (zh) * 2020-06-29 2020-10-20 韩华新能源（启东）有限公司 适用于太阳能电池的硅片的表面处理方法

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